Structure for improving yield of ultra-narrow jaw display screen

Abstract

A structure for improving the yield of an ultra-narrow chin display screen comprises a display screen, and a data line of the display screen comprises a silicon island, a grid electrode, a source electrode and a drain electrode; one side of the grid electrode is provided with a second metal cushion block; a first metal cushion block is arranged on the source electrode. According to the display module, a layer of corresponding metal film layer cushion block is additionally arranged at the relative position of the display area scanning line or the display area data line of the display module, so that the problems, such as dark spots and circuit break, caused by incomplete exposure of metal in the display area can be effectively avoided, and the product yield is improved, especially for an ultra-narrow chin display screen.

Description

Technical Field

[0001] The utility model relates to the technical field of display screen structures, and in particular to a structure for improving the yield rate of an ultra-narrow chin display screen. Background Art

[0002] At present, with the continuous development of the TFT-LCD industry, the market has higher and higher requirements for displays, and the requirements for ultra-narrow bezel products are also getting higher and higher. Consumers are more enthusiastic about narrow-frame mobile phones because of the visual beauty they bring. However, the black frame on the chin of the conventionally designed mobile phone screen will be very large, which is not friendly to the realization of "borderless" mobile phones. It is also a key factor affecting the screen-to-body ratio of curved screen mobile phones. The commonly used method is to introduce other metal film layers on the periphery to achieve the purpose of ultra-narrow bezel. By designing the conventional two-layer metal principle routing as a three-layer metal routing, the space occupied by the principle routing can be greatly reduced. The corresponding ordinary IC is replaced by a sinking IC, so that the chin of the mobile phone can be made smaller and narrower, which greatly increases the screen-to-body ratio of the mobile phone screen, thereby improving the market competitiveness of the mobile phone. For products that need to design other metal film layers on the periphery of the display screen to assist in realizing functions, this technical solution avoids problems caused by unclean exposure of the metal layer in the display area, such as dark spots and circuit breaks, by adding corresponding metal film layer pads at the scanning lines of the display area, thereby improving the product yield, especially for ultra-narrow chin displays. Summary of the invention

[0003] The purpose of the utility model is to overcome the deficiencies in the prior art and provide a structure for improving the yield rate of an ultra-narrow chin display screen.

[0004] The purpose of this utility model is achieved through the following technical solutions:

[0005] A structure for improving the yield rate of an ultra-narrow chin display screen includes: a display screen, wherein the data line of the display screen includes: a silicon island, a gate, a source and a drain; a gate, wherein a second metal pad is arranged on one side of the gate; and a source, wherein a first metal pad is arranged on the source.

[0006] In one of the embodiments, a groove is provided on one side of the center of the bottom of the source electrode, and the first metal pad is attached to the block of the source electrode away from the silicon island.

[0007] In one of the embodiments, the bulk at the bottom of the gate and the silicon island overlap each other, and one end of the drain passes through the silicon island and is located in the groove of the source.

[0008] In one embodiment, the second metal pad is located on the front side of the square block on the right side of the gate.

[0009] In one embodiment, the silicon island is a component structure of a thin film transistor and provides a channel, and the drain is a component structure of a thin film transistor and is connected to a pixel to provide a data signal.

[0010] In one embodiment, the shape and size of the front side of the first metal pad match the shape and size of the front side of the source block away from the silicon island.

[0011] In one of the embodiments, the front surface of the drain is in the shape of a "T" that is cut 40 degrees to the right.

[0012] In one embodiment, a silicon nitride protective layer is formed on the surfaces of the first metal pad and the second metal pad.

[0013] In one embodiment, the shapes, sizes and positions of the first metal pad and the second metal pad are not fixed, but are designed according to the shapes, sizes and positions of the gate and the source.

[0014] Compared with the prior art, the utility model has at least the following advantages:

[0015] The structure of the utility model for improving the yield rate of ultra-narrow chin display screens can effectively avoid problems caused by unclean metal exposure in the display area, such as dark spots, circuit breaks, etc., by adding a corresponding metal film layer pad at the relative position of the display area scan line and the display area data line of the display module, thereby improving the product yield, especially for ultra-narrow chin display screens. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 This is a schematic diagram of the overall front structure of the utility model structure for improving the yield rate of ultra-narrow chin display screens.

[0018] In the figure: 1. Silicon island; 2. Gate; 3. Source; 4. Drain; 5. First metal pad; 6. Second metal pad. DETAILED DESCRIPTION

[0019] In order to facilitate the understanding of the present invention, the present invention will be described more comprehensively with reference to the relevant drawings. The drawings provide preferred embodiments of the present invention. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thoroughly and comprehensively understood.

[0020] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0021] Unless otherwise clearly stipulated and limited, terms such as "installed", "connected", "connected", and "fixed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0023] like Figure 1 As shown, a structure for improving the yield rate of ultra-narrow chin display screens includes: a display screen, wherein the data line of the display screen includes: a silicon island 1, a gate 2, a source 3 and a drain 4; a gate 2, wherein a second metal pad 6 is disposed on one side of the gate 2; and a source 3, wherein a first metal pad 5 is disposed on the source 3. It should be noted that the first metal pad 5 and the second metal pad 6 are both made of metal, and the shapes of the silicon island 1, the gate 2, the source 3 and the drain 4 are not fixed as shown in the attached specification. Figure 1 The shape in the technical solution is only a display of the shape in a certain display module, and the fitting conditions of the first metal pad 5 and the second metal pad 6 correspond to the scanning line of the display area or the data line of the display area of ​​the display module respectively.

[0024] like Figure 1As shown, in one embodiment, the second metal pad 6 is attached to the front of the square block on the right side of the gate 2. It should be noted that the front shape of the opening of the source 3 is similar to a triangle, and the three corners of the triangle are passivated.

[0025] like Figure 1 As shown, in one embodiment, the block at the bottom of the gate 2 overlaps with the silicon island 1, and one end of the drain 4 passes through the silicon island 1 and is located in the groove of the source 3. It should be noted that the groove body is located at the center of the hypotenuse of the triangle formed by the block at the bottom of the silicon island 1.

[0026] like Figure 1 As shown, in one embodiment, the second metal pad 6 is attached to the front side of the square block on the right side of the gate 4. It should be noted that the second metal pad 6 needs to be far away from the silicon island 1, and its size does not affect the original aperture ratio of the pixel.

[0027] like Figure 1 As shown in the figure, in one embodiment, the gate 2 is a component structure of a thin film transistor and provides a thin film transistor switching signal, the source 3 is a component structure of a thin film transistor and can be connected to a data line to provide a data signal. The silicon island 1 is a component structure of a thin film transistor and provides a channel, and the drain 4 is a component structure of a thin film transistor and is connected to a pixel to provide a data signal.

[0028] like Figure 1 As shown, in one embodiment, the shape and size of the front side of the first metal pad 5 match the shape and size of the front side of the source 3 away from the silicon island 1. It should be noted that the first metal pad 5 covers the main body of the source 3, thereby ensuring that the opening of the pixel remains unchanged and avoiding affecting the transmittance of the display screen.

[0029] like Figure 1 As shown in one embodiment, the front side of the drain 4 is shaped like a "T" that is cut 40 degrees to the right. The first metal pad 5 and the second metal pad 6 have a silicon nitride protective layer. It should be noted that this design can extend the service life of the first metal pad 5 and the second metal pad 6.

[0030] like Figure 1 As shown, in one embodiment, the shape, size and position of the first metal pad 5 and the second metal pad 6 are not fixed, but are designed according to the shape, size and position of the gate 2 and the source 3. It should be noted that the first metal pad 5 and the second metal pad 6 will be designed accordingly according to different models of display modules.

[0031] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A structure for improving the yield rate of ultra-narrow chin display screen, characterized in that: include: A display screen, wherein the data line of the display screen comprises: a silicon island (1), a gate (2), a source (3) and a drain (4); A gate (2), wherein a second metal pad (6) is provided on one side of the gate (2); A source electrode (3), wherein a first metal pad (5) is arranged on the source electrode (3).

2. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: A groove is provided on one side of the center of the bottom of the source electrode (3), and the first metal pad (5) is attached to the block of the source electrode (3) on the side away from the silicon island (1).

3. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The block at the bottom of the gate (2) and the silicon island (1) overlap each other, and one end of the drain (4) passes through the silicon island (1) and is located in the groove of the source (3).

4. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The second metal pad (6) is attached to the front side of the square block on the right side of the gate (2).

5. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The gate electrode (2) is a component structure of a thin film transistor and provides a thin film transistor switch signal. The source electrode (3) is a component structure of a thin film transistor and can be connected to a data line to provide a data signal.

6. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The silicon island (1) is a component structure of a thin film transistor and provides a channel, and the drain (4) is a component structure of a thin film transistor and is connected to a pixel to provide a data signal.

7. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The shape and size of the front side of the first metal pad (5) match the shape and size of the front side of the source electrode (3) away from the silicon island (1).

8. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The front side of the drain electrode (4) is in the shape of a "T" that is cut 40 degrees to the right.

9. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The surfaces of the first metal pad (5) and the second metal pad (6) are provided with a silicon nitride protective layer.

10. The structure for improving the yield rate of ultra-narrow chin display screen according to claim 1, characterized in that: The shape, size and position of the first metal pad (5) and the second metal pad (6) are not fixed, but are designed according to the shape, size and position of the gate (2) and the source (3).

Images