Crystalline silicon-perovskite two-end laminated solar cell

By adopting a composite layer structure of the TCO layer and the p-type semiconductor metal oxide layer in the crystalline silicon-perovskite stacked battery, the problems of charge transfer limitation and interface defects of the tunneling layer are solved, and the photoelectric conversion efficiency is significantly improved.

CN222674884UActive Publication Date: 2025-03-25WUXI UTMOST LIGHT TECH CO LTD
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Patent Information

Application Number
CN202421324610.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-06-11
Publication Date
2025-03-25
Estimated Expiration
2034-06-11

AI Technical Summary

Technical Problem

The tunneling layer of existing crystalline silicon-perovskite stacked batteries cannot fully meet the needs of industrialization, and there is a problem of limited charge transfer and is not suitable for trans structure perovskite batteries or multiple interface defects.

Method used

The composite layer structure is adopted, including a TCO layer and a p-type semiconductor metal oxide layer between the crystalline silicon substrate and the perovskite stack, and is prepared by magnetron sputtering method to optimize the energy level matching and charge transfer efficiency of the tunneling layer.

Benefits of technology

It effectively improves the photoelectric conversion efficiency, solves the problem that traditional tunneling layers are not suitable for trans structure and interface defects, and significantly improves the performance of stacked batteries.

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Abstract

The utility model provides a crystalline silicon-perovskite two-end laminated solar cell. The crystalline silicon-perovskite two-end laminated solar cell comprises a composite layer arranged between a crystalline silicon substrate and a perovskite laminated layer, the composite layer comprises a TCO layer and a p-type semiconductor metal oxide layer, and the TCO layer in the composite layer is arranged on the surface of one side of the crystalline silicon substrate. The structure provided by the utility model does not have the problems that the structure is not suitable for a trans-structure perovskite cell and the crystalline silicon substrate is damaged to a certain extent so as to cause multiple defects of an interface, and the surface of the composite layer is modified by utilizing p-type metal oxide on the premise of ensuring the protection of the TCO material on the crystalline silicon substrate and high light transmittance. Therefore, the effect of adjusting the energy level is achieved, the photoelectric conversion efficiency of the laminated cell is effectively improved, and the effect is remarkable.
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