Radiator of insulated gate bipolar transistor

Abstract

The utility model discloses a heat radiator of an insulated gate bipolar transistor, which comprises a heat radiation main body connected with the insulated gate bipolar transistor, a heat radiation base connected with the heat radiation main body, a flow distribution plate and a partition plate, a sealed heat dissipation inner cavity is formed between the heat dissipation body and the heat dissipation base, a water inlet and a water outlet which are communicated with the heat dissipation inner cavity are formed in the heat dissipation base, the flow distribution plate is horizontally arranged in the heat dissipation inner cavity, the upper end of the partition plate is connected with the lower surface of the flow distribution plate, the lower end of the partition plate is connected with the upper surface of the heat dissipation base, and the water inlet and the water outlet are separated by the partition plate. A flow channel is formed between the water inlet and the water outlet, wherein the flow channel flows through the upper portion of the flow distribution plate from one side of the partition plate and then flows into the other side of the partition plate. And a turbulent flow assembly is arranged above the flow distribution plate. According to the utility model, the flow distribution plate and the partition plate are arranged in the heat dissipation inner cavity to form the flow channel for guiding the cooling liquid, and the heat dissipation effect of the heat dissipation device on the insulated gate bipolar transistor is ensured to be uniform in cooperation with the turbulent flow assembly.

Description

Technical Field

[0001] The utility model relates to the technical field of heat dissipation devices, in particular to a heat sink for an insulated gate bipolar transistor. Background Art

[0002] Currently, high-power insulated-gate bipolar transistors (IGBTs) are widely used in high-power converters. During operation, these transistors generate power losses and a significant amount of heat, causing temperature rise, which affects the lifespan and operational reliability of the IGBTs. Therefore, a cooling system that can dissipate heat promptly and effectively is required. IGBT cooling systems can employ three cooling methods: air cooling, oil cooling, and water cooling.

[0003] The water-cooled radiators in the existing technology are prone to pressure loss, dead water areas, uneven flow rate, backflow and other phenomena, which cause uneven junction temperature of the IGBT chip. The chip temperature on the water outlet side is significantly higher than the chip temperature on the water inlet side, which is more likely to trigger temperature protection, thereby affecting the performance of the IGBT module.

[0004] In view of this, it is necessary to provide a water-cooled heat sink for an insulated gate bipolar transistor that can dissipate heat evenly. Utility Model Content

[0005] The purpose of the utility model is to overcome the shortcomings of the prior art and provide a heat sink for an insulated gate bipolar transistor. The heat sink forms a flow channel for guiding the coolant between the heat sink body and the heat sink base by arranging a distribution plate and a partition plate inside the heat sink, thereby ensuring that the coolant entering from the water inlet flows through the top of the distribution plate, thereby ensuring that the coolant has sufficient time to cool the insulated gate bipolar transistor located above the heat sink body before flowing out from the water outlet, thereby ensuring uniform heat dissipation, avoiding uneven junction temperature of the insulated gate bipolar transistor, and being more conducive to fully releasing the performance of the insulated gate bipolar transistor.

[0006] The utility model provides a heat sink for an insulated gate bipolar transistor, comprising a heat sink body connected to the insulated gate bipolar transistor, a heat sink base connected to the heat sink body, a distribution plate and a partition plate;

[0007] A sealed heat dissipation cavity is formed between the heat dissipation body and the heat dissipation base. The heat dissipation base is provided with a water inlet and a water outlet communicating with the heat dissipation cavity. The distribution plate is horizontally arranged in the heat dissipation cavity. The upper end of the partition plate is connected to the lower surface of the distribution plate and the lower end is connected to the upper surface of the heat dissipation base. The partition plate separates the water inlet and the water outlet. A flow channel is formed between the water inlet and the water outlet, flowing from one side of the partition plate through the top of the distribution plate and then into the other side of the partition plate.

[0008] A spoiler assembly is provided above the distribution plate.

[0009] In one of the optional technical solutions, the spoiler assembly includes a plurality of spoiler columns arranged at intervals, and the upper ends of the spoiler columns are connected to the lower surface of the heat dissipation body.

[0010] In one of the optional technical solutions, the cross section of the spoiler column is an ellipse with the major axis direction consistent with the water flow direction of the flow channel.

[0011] In one of the optional technical solutions, a plurality of bosses contacting the insulated gate bipolar transistors are provided on the upper surface of the heat dissipation body, and a group of spoiler columns are provided below each of the bosses.

[0012] In one of the optional technical solutions, the spoiler component includes spoiler fins.

[0013] In one of the optional technical solutions, along the water flow direction of the flow channel, the spoiler fins have concave surfaces and convex surfaces that are alternately distributed in sequence, and the concave surfaces of two adjacent spoiler fins are opposite to each other, so that the flow channel forms a structure in which expansion areas and compression areas are alternately distributed.

[0014] In one of the optional technical solutions, the water inlet and the water outlet are symmetrically arranged at both ends of the heat dissipation base, and the cross-section of the partition plate is a curved surface that separates the water inlet and the water outlet on both sides.

[0015] In one of the optional technical solutions, at least two guide vanes are provided on the lower surface of the distribution plate, and the guide vanes are distributed on both sides of the partition plate.

[0016] In one of the optional technical solutions, the guide plate is a curved structure, and the concave surface of the guide plate faces the water inlet or the water outlet.

[0017] In one of the optional technical solutions, the water inlet and the water outlet are respectively provided with connectors connected to external pipelines.

[0018] The above technical solution has the following beneficial effects:

[0019] The heat sink for an insulated gate bipolar transistor provided by the present invention comprises a flow channel for guiding the flow of coolant in the heat dissipation cavity formed by the heat dissipation body and the heat dissipation base, thereby ensuring that the coolant entering the heat dissipation cavity from the water inlet must first flow through the top of the flow plate before flowing out from the water outlet, thereby ensuring that the coolant has sufficient time to cool the insulated gate bipolar transistor located above the heat dissipation body while flowing through the heat dissipation cavity. Furthermore, by providing a spoiler component located above the flow plate, the coolant is allowed to flow evenly and fully above the flow plate, thereby evenly dissipating heat for the insulated gate bipolar transistors located at different positions on the heat dissipation body, avoiding uneven junction temperatures of the insulated gate bipolar transistors, and more conducive to fully releasing the maximum current capacity of the insulated gate bipolar transistors, thereby reducing costs, increasing efficiency, and lowering voltage drop, thereby improving performance while reducing overall power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The disclosure of the present invention will become easier to understand with reference to the accompanying drawings. It should be understood that these drawings are for illustrative purposes only and are not intended to limit the scope of protection of the present invention. In the drawings:

[0021] Figure 1 An exploded structural diagram of a heat sink for an insulated gate bipolar transistor provided in one embodiment of the present utility model;

[0022] Figure 2 An exploded cross-sectional view of a heat sink for an insulated gate bipolar transistor provided by one embodiment of the present utility model;

[0023] Figure 3 A schematic structural diagram of a heat dissipation body provided by an embodiment of the present invention;

[0024] Figure 4 A top view of a heat dissipation body provided by an embodiment of the present utility model;

[0025] Figure 5 A top view of a distribution plate provided in one embodiment of the present utility model;

[0026] Figure 6 A schematic structural diagram of a heat dissipation base provided in one embodiment of the present utility model;

[0027] Figure 7 This is a structural schematic diagram of a connecting piece provided in one embodiment of the present utility model.

[0028] Reference numerals in the figures:

[0029] 1. Heat dissipation body; 11. Boss;

[0030] 2. Heat dissipation base; 21. Water inlet; 22. Water outlet;

[0031] 3. Distribution plate;

[0032] 4. Separator;

[0033] 5. spoiler assembly; 51. spoiler column;

[0034] 6. Guide vane;

[0035] 7. Connectors. DETAILED DESCRIPTION

[0036] The following further describes specific embodiments of the present invention with reference to the accompanying drawings. Identical components are denoted by the same reference numerals. It should be noted that the terms "front," "rear," "left," "right," "up," and "down" used in the following description refer to directions in the accompanying drawings, while the terms "inward" and "outward" refer to directions toward or away from the geometric center of a particular component, respectively.

[0037] In this utility model, unless otherwise specified or limited, the term "fixed" and the like should be understood in a broad sense. For example, "fixed" can mean fixed connection, detachable connection, or integration; it can mean mechanical connection or electrical connection; it can mean direct connection or indirect connection through an intermediate medium; it can mean internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0038] like Figure 1 and Figure 2 As shown, one embodiment of the present invention provides a heat sink for an insulated gate bipolar transistor, comprising a heat sink body 1 connected to the insulated gate bipolar transistor, a heat sink base 2 connected to the heat sink body 1, a distribution plate 3, and a partition plate 4. A sealed heat sink cavity is formed between the heat sink body 1 and the heat sink base 2. The heat sink base 2 is provided with a water inlet 21 and a water outlet 22 communicating with the heat sink cavity. The distribution plate 3 is horizontally disposed within the heat sink cavity. The partition plate 4 has an upper end connected to the lower surface of the distribution plate 3 and a lower end connected to the upper surface of the heat sink base 2. The partition plate 4 separates the water inlet 21 from the water outlet 22, forming a flow channel between the water inlet 21 and the water outlet 22, which flows from one side of the partition plate 4 through the top of the distribution plate 3 and then into the other side of the partition plate 4. A spoiler assembly 5 is provided above the distribution plate 3. The coolant flows from the water inlet 21 into the heat sink cavity, flows along the flow channel through the heat sink cavity for a sufficient time, and finally flows out from the water outlet 22. When the coolant flows over the distribution plate 3, it contacts the spoiler assembly 5 to form turbulent flow, thereby evenly and fully exchanging heat with various parts of the heat sink body 1, thereby enabling the heat sink body 1 to evenly cool the insulated gate bipolar transistors connected to different parts of the heat sink body 1. The coolant mentioned in the present invention can be water or other refrigerants.

[0039] like Figure 1 As shown, as a preferred embodiment, the heat dissipation body 1 and the heat dissipation base 2 are connected to form a rectangular parallelepiped structure with a hollow interior. The lower end surfaces of the four side walls of the heat dissipation body 1 are tightly connected to the upper end surfaces of the four side walls of the heat dissipation base 2 to form a sealed rectangular parallelepiped heat dissipation cavity. The heat dissipation body 1 is made of copper or aluminum alloy with strong heat dissipation performance. The upper surface of the heat dissipation body 1 is directly in contact with the insulated gate bipolar transistor to achieve heat exchange. The heat dissipation base 2 is made of aluminum alloy. The bottom surface of the heat dissipation base 2 is provided with at least one water inlet 21 and one water outlet 22. In order to adapt to the pipeline, the water inlet 21 and the water outlet 22 are both circular through-hole structures. In order to further improve the sealing of the heat dissipation cavity, a sealing ring can also be provided on the periphery of the water inlet 21 and the water outlet 22. The heat dissipation body 1 and the heat dissipation base 2 can be detachably fixedly connected by a connector 7 such as a bolt, or can be fixedly connected by welding.

[0040] like Figure 5 As shown, preferably, the distribution plate 3 and the partition plate 4 are integrally formed, and the distribution plate 3 and the partition plate 4 are made of aluminum alloy or engineering plastic. The shape of the distribution plate 3 is a rectangle that matches the heat dissipation cavity, and the two sides of the distribution plate 3 do not contact the side walls of the heat dissipation body 1 or the heat dissipation base 2 to leave enough space for the coolant to flow through. The lower end surface of the partition plate 4 is fixedly connected to completely separate the area below the distribution plate 3 in the heat dissipation cavity, ensuring that the coolant cannot pass through the partition plate 4, thereby guiding the flow direction of the coolant and ensuring that the coolant flows from the top of the distribution plate 3 before being discharged from the water outlet 22, and fully contacts the spoiler assembly 5. The spoiler assembly 5 can include various structures that can reduce the flow rate of the coolant, including structures such as fins and spoiler columns 51. The spoiler assembly 5 can be connected to the lower surface of the heat dissipation body 1, and can also be connected to the upper surface of the distribution plate 3.

[0041] In summary, the heat sink for the insulated gate bipolar transistor provided by the present invention forms a flow channel for guiding the flow of coolant in the heat dissipation cavity formed by the heat dissipation body 1 and the heat dissipation base 2 by disposing a distribution plate 3 and a partition plate 4 internally, thereby ensuring that the coolant entering the heat dissipation cavity from the water inlet 21 must first flow through the top of the distribution plate 3 before flowing out from the water outlet 22, thereby ensuring that the coolant has sufficient time to cool the insulated gate bipolar transistor located above the heat dissipation body 1 while flowing through the heat dissipation cavity. Furthermore, by disposing a spoiler component 5 located above the distribution plate 3, the coolant is allowed to flow evenly and fully above the distribution plate 3, thereby evenly dissipating the heat of the insulated gate bipolar transistors located at different positions on the heat dissipation body 1, avoiding uneven junction temperatures of the insulated gate bipolar transistors, and more conducive to fully releasing the maximum current capacity of the insulated gate bipolar transistors, thereby reducing costs and increasing efficiency and reducing voltage drop, thereby improving performance while reducing overall power consumption.

[0042] In one embodiment, Figure 4 As shown, the spoiler assembly 5 includes a plurality of spaced-apart spoiler posts 51, the upper ends of which are connected to the lower surface of the heat dissipation body 1. The upper ends of the spoiler posts 51 are connected to the lower surface of the heat dissipation body 1. By providing a plurality of spoiler posts 51, the surface area in contact with the fluid is increased to improve the heat dissipation performance.

[0043] In this embodiment, by providing a plurality of spoiler columns 51 to form a spoiler assembly 5, the coolant flowing along the flow channel will collide with the spoiler columns 51, thereby generating turbulence, slowing the flow rate of the coolant and ensuring a longer heat exchange time between the coolant and the heat exchange body. The spoiler columns 51 not only increase the turbulence of the coolant, but also transfer heat from the heat dissipation body 1 to the coolant through the spoiler columns 51.

[0044] In one embodiment, Figure 4 As shown, the cross-section of the spoiler 51 is an ellipse, with the major axis aligned with the direction of water flow in the flow channel. Setting the spoiler 51 in an elliptical cylindrical structure can reduce resistance to fluid flow, preventing the coolant from being obstructed by the spoiler 51 and changing its flow trajectory. Furthermore, the elliptical cylindrical structure has a larger side surface area, providing the spoiler 51 with enhanced heat exchange capacity.

[0045] In one embodiment, Figure 3 As shown, the upper surface of the heat dissipation body 1 is provided with a plurality of bosses 11 that contact the insulated gate bipolar transistors, and a group of spoiler columns 51 are provided below each boss 11. In this embodiment, the arrangement of the boss 11 structure increases the contact area between the heat dissipation body 1 and the insulated gate bipolar transistors, while the spoiler columns 51 located below the bosses 11 can specifically improve the heat dissipation efficiency of the corresponding area. As a specific example, the upper surface of the heat dissipation body 1 is provided with two rows of bosses 11, and the two rows of bosses 11 are symmetrically distributed on both sides of the upper surface of the heat dissipation body 1. The bosses 11 are arranged at intervals according to the positional relationship of the insulated gate bipolar transistors.

[0046] In one embodiment, the spoiler assembly 5 includes spoiler fins. Furthermore, along the flow direction of the flow channel, the spoiler fins have concave and convex surfaces that are alternately distributed, and the concave surfaces of two adjacent spoiler fins face each other, so that the flow channel forms a structure with alternating expansion and compression zones.

[0047] In this embodiment, the spoiler fins may be pin-fin or plate-fin structures, or other heat dissipation fin structures known in the prior art. When the spoiler fins are plate-fin structures, the spoiler fins are configured to have a concave and convex surface. Multiple spoiler fins are arranged at intervals, with the concave and convex surfaces facing each other, forming an area capable of expanding or compressing the coolant, thereby better guiding the coolant. At the same time, the side surfaces of the spoiler fins can also serve as heat exchange surfaces, increasing the surface area of contact between the coolant and the heat dissipation body 1, thereby optimizing the flow characteristics of the coolant and improving heat dissipation efficiency, and making the heat exchange of the coolant in the heat dissipation cavity more thorough.

[0048] In one embodiment, Figure 5 and Figure 6 As shown, the water inlet 21 and the water outlet 22 are symmetrically arranged at both ends of the heat dissipation base 2 , and the cross section of the partition plate 4 is a curved surface that separates the water inlet 21 and the water outlet 22 on both sides.

[0049] In this embodiment, the water inlet 21 and the water outlet 22 are located on the same horizontal line and the symmetrical structure is easy to process. In order to separate the water inlet 21 and the water outlet 22 without destroying the smoothness of the coolant passing through the flow channel, the partition plate 4 can be set to a soft curved plate or an inclined plate, so that the two ends of the partition plate 4 avoid the water inlet 21 and the water outlet 22, thereby separating the water inlet 21 and the water outlet 22 on both sides of the partition plate 4. The partition plate 4 can symmetrically separate the two side spaces of the heat dissipation cavity in the middle of the heat dissipation cavity, thereby improving the symmetry of the flow channel.

[0050] In one embodiment, Figure 5 As shown, at least two guide vanes 6 are provided on the lower surface of the distribution plate 3, and the guide vanes 6 are distributed on both sides of the partition plate 4. Furthermore, the guide vanes 6 are curved structures, and the concave surfaces of the guide vanes 6 face the water inlet 21 or the water outlet 22.

[0051] In this embodiment, the provision of guide vanes 6 helps guide the coolant to flow more evenly through the distribution plate 3, improving heat exchange efficiency. The curved guide vanes 6, symmetrically arranged on either side of the partition plate 4, effectively guide the coolant flow, ensuring that it flows along the flow path. This symmetrical layout helps achieve balanced coolant flow and avoids localized overheating caused by uneven flow. The curved guide vanes 6 better adapt to fluid dynamics and further optimize the coolant flow.

[0052] In one embodiment, Figure 7 As shown, the water inlet 21 and the water outlet 22 are respectively provided with connectors 7 connected to external pipes.

[0053] In this embodiment, the provision of the connector 7 ensures that the connection between the radiator and the external pipe is stable while being convenient for assembly and disassembly. The connector 7 can be replaced according to actual connection needs to improve the range of connection adaptation. Preferably, the outer periphery of the water inlet 21 and the water outlet 22 is provided with a connecting groove, and a sealing ring is also provided in the connecting groove to improve the connection sealing. The upper end of the connector 7 is embedded in the connecting groove to achieve a snap connection, and the lower end of the connector 7 is provided with an external thread, and the connector 7 and the external pipe are threaded. The connector 7 can also be fixedly connected to the heat dissipation base 2 by threaded cooperation by providing an external thread at the upper end and an internal thread at the water inlet 21 and the water outlet 22. In addition, the connector 7 can also be integrally formed with the heat dissipation base 2. The connection method of the connector 7 to the heat dissipation base 2 or the external pipe can be a latch, a suction cup, a magnetic attraction, etc., which will not be repeated here.

[0054] As needed, the above technical solutions can be combined to achieve the best technical effect.

[0055] The above are only the principles and preferred embodiments of the present invention. It should be noted that, for those skilled in the art, on the basis of the principles of the present invention, several other modifications can be made, which should also be considered as the scope of protection of the present invention.

Claims

1. A heat sink for an insulated gate bipolar transistor, characterized in that: It comprises a heat dissipation body (1) connected to an insulated gate bipolar transistor, a heat dissipation base (2) connected to the heat dissipation body (1), a distribution plate (3) and a partition plate (4); A sealed heat dissipation cavity is formed between the heat dissipation body (1) and the heat dissipation base (2); a water inlet (21) and a water outlet (22) in communication with the heat dissipation cavity are provided on the heat dissipation base (2); the distribution plate (3) is horizontally arranged in the heat dissipation cavity; the upper end of the partition plate (4) is connected to the lower surface of the distribution plate (3) and the lower end is connected to the upper surface of the heat dissipation base (2); the partition plate (4) separates the water inlet (21) and the water outlet (22); and a flow channel is formed between the water inlet (21) and the water outlet (22) so as to flow from one side of the partition plate (4) through the top of the distribution plate (3) and then flow into the other side of the partition plate (4); A spoiler assembly (5) is provided above the distribution plate (3).

2. The heat sink of the insulated gate bipolar transistor according to claim 1, wherein: The spoiler assembly (5) comprises a plurality of spoiler columns (51) arranged at intervals, and the upper ends of the spoiler columns (51) are connected to the lower surface of the heat dissipation body (1).

3. The heat sink of the insulated gate bipolar transistor according to claim 2, characterized in that: The cross section of the flow-disturbing column (51) is an ellipse, the major axis of which is consistent with the water flow direction of the flow channel.

4. The heat sink of the insulated gate bipolar transistor according to claim 3, characterized in that: The upper surface of the heat dissipation body (1) is provided with a plurality of bosses (11) in contact with the insulated gate bipolar transistors, and a group of spoiler columns (51) is provided below each boss (11).

5. The heat sink of the insulated gate bipolar transistor according to claim 1, wherein: The spoiler component (5) comprises spoiler fins.

6. The heat sink of the insulated gate bipolar transistor according to claim 5, characterized in that: Along the water flow direction of the flow channel, the spoiler fins have concave surfaces and convex surfaces that are alternately distributed in sequence, and the concave surfaces of two adjacent spoiler fins face each other, so that the flow channel forms a structure in which expansion areas and compression areas are alternately distributed.

7. The heat sink of the insulated gate bipolar transistor according to claim 1, wherein: The water inlet (21) and the water outlet (22) are symmetrically arranged at both ends of the heat dissipation base (2), and the cross section of the partition plate (4) is a curved surface that separates the water inlet (21) and the water outlet (22) on both sides.

8. The heat sink of the insulated gate bipolar transistor according to claim 7, characterized in that: At least two guide vanes (6) are provided on the lower surface of the distribution plate (3), and the guide vanes (6) are distributed on both sides of the partition plate (4).

9. The heat sink of the insulated gate bipolar transistor according to claim 8, characterized in that: The guide plate (6) is a curved structure, and the concave surface of the guide plate (6) faces the water inlet (21) or the water outlet (22).

10. The heat sink of the insulated gate bipolar transistor according to any one of claims 1 to 9, characterized in that: The water inlet (21) and the water outlet (22) are respectively provided with connecting pieces (7) connected to external pipelines.

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