Radiator of insulated gate bipolar transistor
By setting up a distribution plate and a partition plate in the heat sink of an insulated gate bipolar transistor, combined with the spoiler component, the problem of junction temperature is solved, uniform heat dissipation is achieved, the performance of the transistor is improved and power consumption is reduced.
CN223206268UActive Publication Date: 2025-08-08GAC AION NEW ENERGY AUTOMOBILE CO LTD
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Patent Information
- Application Number
- CN202422354236.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-08-08
- Estimated Expiration
- 2034-09-25
AI Technical Summary
Technical Problem
Existing water-cooled radiators have problems such as uneven junction temperature, uneven flow rate and stagnant water zone in insulated gate bipolar transistors, which affect the performance and reliability of the transistor.
Method used
A dispensing plate and a partition plate are arranged inside the radiator to form a guide coolant flow channel, and a spoiler assembly is arranged above the dispensing plate to ensure that the coolant flows evenly to dissipate heat.
Benefits of technology
It realizes uniform heat dissipation of insulated gate bipolar transistors, avoids uneven junction temperature, improves the transistor's performance and current capabilities, and reduces overall power consumption.
✦ Generated by Eureka AI based on patent content.
Abstract
The utility model discloses a heat radiator of an insulated gate bipolar transistor, which comprises a heat radiation main body connected with the insulated gate bipolar transistor, a heat radiation base connected with the heat radiation main body, a flow distribution plate and a partition plate, a sealed heat dissipation inner cavity is formed between the heat dissipation body and the heat dissipation base, a water inlet and a water outlet which are communicated with the heat dissipation inner cavity are formed in the heat dissipation base, the flow distribution plate is horizontally arranged in the heat dissipation inner cavity, the upper end of the partition plate is connected with the lower surface of the flow distribution plate, the lower end of the partition plate is connected with the upper surface of the heat dissipation base, and the water inlet and the water outlet are separated by the partition plate. A flow channel is formed between the water inlet and the water outlet, wherein the flow channel flows through the upper portion of the flow distribution plate from one side of the partition plate and then flows into the other side of the partition plate. And a turbulent flow assembly is arranged above the flow distribution plate. According to the utility model, the flow distribution plate and the partition plate are arranged in the heat dissipation inner cavity to form the flow channel for guiding the cooling liquid, and the heat dissipation effect of the heat dissipation device on the insulated gate bipolar transistor is ensured to be uniform in cooperation with the turbulent flow assembly.
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