Antenna and communication equipment

Abstract

The utility model provides an antenna and communication equipment. The radiation layer comprises a radiator, a micro-strip feeder line, a first micro-strip resonance unit and a second micro-strip resonance unit. In the first direction, one end of the microstrip feeder line is connected with the radiator. A first space is formed in the side, close to the radiator, of the microstrip feeder line, the radiator comprises a first extending part, and a first gap is formed between the first extending part and the microstrip feeder line. And along the second direction, the first micro-strip resonance unit and the second micro-strip resonance unit are respectively arranged at two sides of the micro-strip feeder line at intervals. And the radio frequency ground layer is arranged on the second surface, and the radio frequency ground layer is coupled with the radiation layer. A first gap is formed between the first extension part and the microstrip feeder line, so that the antenna has an in-band notch characteristic, and the first microstrip resonance unit and the second microstrip resonance unit are arranged on the two sides of the microstrip feeder line at intervals, so that the antenna has an out-of-band high selection characteristic. And in-band notch and out-of-band high selectivity can effectively suppress in-band interference and efficiently utilize spectrum resources.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of communication, in particular to an antenna and a communication device. BACKGROUND

[0002] The planar ultra-wideband antenna has the advantages of high transmission rate, low cost, light weight, simple design, low profile, easy integration with other components, etc., and thus has attracted extensive attention and in-depth research from scholars and engineers in the industry. However, the planar ultra-wideband antennas reported at present often do not have the problems of in-band notch and high selectivity out of band, which greatly limits their application in the field of modern wireless communication. CONTENT OF THE UTILITY MODEL

[0003] The present application provides an antenna and a communication device, aiming to improve the problem that the antenna does not have in-band notch and high selectivity out of band.

[0004] In a first aspect, an embodiment of the present application provides an antenna, which comprises a dielectric layer, a radiation layer and a radio frequency ground layer. The dielectric layer comprises a first surface and a second surface arranged oppositely. The radiation layer comprises a radiator arranged on the first surface, a microstrip feed line, a first microstrip resonant unit and a second microstrip resonant unit. In a first direction, one end of the microstrip feed line is connected to the radiator. A first space is formed on one side of the microstrip feed line close to the radiator, and the radiator comprises a first extension part, and a first gap is formed between the first extension part and the microstrip feed line. In a second direction, the first microstrip resonant unit and the second microstrip resonant unit are respectively arranged on both sides of the microstrip feed line. The first direction is perpendicular to the second direction. The radio frequency ground layer is arranged on the second surface, and the radio frequency ground layer is coupled to the radiation layer.

[0005] In some embodiments, the first microstrip resonant unit and the second microstrip resonant unit are symmetrically arranged about a perpendicular bisector of the dielectric layer.

[0006] In some embodiments, the first microstrip resonant unit comprises a first stub and a second stub, one end of the second stub is connected to an end of the first stub away from the radiator, and the other end of the second stub extends in a direction away from the microstrip feed line. The second microstrip resonant unit comprises a third stub and a fourth stub, one end of the fourth stub is connected to an end of the third stub away from the radiator, and the other end of the fourth stub extends in a direction away from the microstrip feed line.

[0007] In some embodiments, the radiator includes a first radiating patch, a second radiating patch and a third radiating patch, and the second radiating patch is connected between the first radiating patch and the third radiating patch along the second direction. The second radiating patch has a second gap and a third gap close to the end of the microstrip feed line, and the first extension extends in the first space and is perpendicular to the second gap and the third gap.

[0008] In some embodiments, the second gap and the third gap are respectively arranged on two sides of the first extension along the second direction, and the second gap and the third gap are in communication with the first gap.

[0009] In some embodiments, the first radiating patch and the third radiating patch are semi-elliptical, and the second radiating patch is rectangular. Along the first direction, the length of the major axis of the first radiating patch and the length of the major axis of the third radiating patch are equal to the length of the second radiating patch.

[0010] In some embodiments, the radio frequency ground layer includes a first radio frequency patch, a second radio frequency patch and a third radio frequency patch, and the second radio frequency patch is connected between the first radio frequency patch and the third radio frequency patch along the second direction, and the first radio frequency patch, the second radio frequency patch and the third radio frequency patch enclose a groove. Along the first direction, the opening of the groove is directed to the side away from the microstrip feed line.

[0011] In some embodiments, the first radio frequency patch and the third radio frequency patch are right trapezoids, and the second radio frequency patch is rectangular. Along the first direction, the upper base of the first radio frequency patch and the upper base of the third radio frequency patch are equal to the width of the second radio frequency patch.

[0012] In some embodiments, the antenna satisfies at least one of the following conditions: a, the symmetry axis of the radiator is located on the median line of the dielectric layer; b, the symmetry axis of the microstrip feed line is located on the median line of the dielectric layer; c, the symmetry axis of the radio frequency ground layer is located on the median line of the dielectric layer; d, the first gap includes a first sub-gap and a second sub-gap, and the symmetry axes of the first sub-gap and the second sub-gap are located on the median line of the dielectric layer.

[0013] In a second aspect, the embodiments of the present application further provide a communication device including the antenna as any one of the first aspect

[0014] Different from the prior art, the embodiment of the application provides an antenna, which comprises a dielectric layer, a radiation layer and a radio frequency ground layer. The dielectric layer comprises oppositely arranged first and second surfaces. The radiation layer comprises a radiator arranged on the first surface, a microstrip feed line, a first microstrip resonant unit and a second microstrip resonant unit. In a first direction, one end of the microstrip feed line is connected with the radiator. A first space is formed on one side of the microstrip feed line close to the radiator, and the radiator comprises a first extension part, and a first gap is formed between the first extension part and the microstrip feed line. In a second direction, the first and second microstrip resonant units are respectively arranged on two sides of the microstrip feed line. The first direction is perpendicular to the second direction. The radio frequency ground layer is arranged on the second surface, and the radio frequency ground layer is coupled with the radiation layer. The first gap formed between the first extension part and the microstrip feed line enables the antenna to have a band notch characteristic, and the first and second microstrip resonant units are respectively arranged on two sides of the microstrip feed line, which enables the antenna to have a high selectivity outside the band, and the band notch and the high selectivity outside the band can effectively suppress the band interference and efficiently utilize the spectrum resource. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 FIG. 1 is a side view of some antennas provided by the embodiment of the application;

[0016] Figure 2 FIG. 2 is an exploded view of some antennas provided by the embodiment of the application;

[0017] Figure 3 FIG. 3 is a structure diagram of some dielectric layers and radiation layers provided by the embodiment of the application;

[0018] Figure 4 FIG. 4 is a structure diagram of some radiation layers provided by the embodiment of the application;

[0019] Figure 5 FIG. 5 is a structure diagram of some gap regions provided by the embodiment of the application;

[0020] Figure 6 FIG. 6 is a structure diagram of some radiators provided by the embodiment of the application;

[0021] Figure 7 FIG. 7 is a structure diagram of some radio frequency ground layers and dielectric layers provided by the embodiment of the application;

[0022] Figure 8 FIG. 8 is a structure diagram of some radio frequency ground layers provided by the embodiment of the application;

[0023] Figure 9 FIG. 9 is a top view of some antennas provided by the embodiment of the application;

[0024] Figure 10 FIG. 10 is a bottom view of some antennas provided by the embodiment of the application;

[0025] Figure 11 is a simulation diagram of a standing wave ratio of the super-bandwidth planar antenna after parameter optimization provided by an embodiment of the present application;

[0026] Figure 12 is a simulation result diagram of maximum gain and radiation efficiency of the antenna provided by an embodiment of the present application;

[0027] Figure 13 is a radiation pattern of the antenna at 10.0 GHz provided by an embodiment of the present application;

[0028] Figure 14 is a radiation pattern of the antenna at 20.0 GHz provided by an embodiment of the present application;

[0029] Figure 15 is a radiation pattern of the antenna at 30.0 GHz provided by an embodiment of the present application.

[0030] Legend of reference signs:

[0031] 100, antenna;

[0032] 10, dielectric layer; 11, first surface; 12, second surface;

[0033] 20, radiation layer; 21, radiator; 211, first radiation patch; 212, second radiation patch; 213, third radiation patch; 214, first extension; 22, microstrip feed line; 221, first space; 23, first microstrip resonant unit; 231, first stub; 232, second stub; 24, second microstrip resonant unit; 241, third stub; 242, fourth stub; 25, gap region; 251, first gap; 2511, first sub-gap; 2512, second sub-gap; 252, second gap; 253, third gap;

[0034] 30, radio frequency ground layer; 31, first radio frequency patch; 32, second radio frequency patch; 33, third radio frequency patch; 34, groove;

[0035] X, first direction;

[0036] Y, second direction;

[0037] Z, third direction. DETAILED DESCRIPTION

[0038] The embodiments of the technical solutions of the present application will be described in detail below with reference to the drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0039] In the description of the embodiments of the present application, the technical terms "first", "second" and the like are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "several" is more than one, unless otherwise explicitly and specifically limited.

[0040] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0041] In this paper, the phrase "embodiment" means that the specific features, structures or characteristics described in conjunction with the embodiment can be included in at least one embodiment of the present application. The phrase appears at various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment independent of or alternative to other embodiments. In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0042] In a first aspect, embodiments of the present application provide an antenna 100, please refer to Figure 1 and Figure 2 The antenna 100 includes a dielectric layer 10, a radiation layer 20 and a radio frequency ground layer 30. Along the third direction Z, the dielectric layer 10 includes the first surface 11 and the second surface 12 arranged oppositely, the radiation layer 20 is arranged on the first surface 11, and the radio frequency ground layer 30 is arranged on the second surface 12, and the radio frequency ground layer 30 is coupled with the radiation layer 20. Wherein, the third direction Z is the thickness direction of the dielectric layer 10.

[0043] In some embodiments, the radiation layer 20 and the radio frequency ground layer 30 are both made of metal. For example, copper, aluminum, silver and other metal materials.

[0044] For the above-mentioned radiation layer 20, please refer to Figures 3 to 5The radiation layer 20 is usually arranged on the front surface of the antenna 100, and the radiation layer 20 comprises a radiator 21 arranged on the first surface 11, a microstrip feed line 22, a first microstrip resonant unit 23 and a second microstrip resonant unit 24. In the first direction X, one end of the microstrip feed line 22 is connected to the radiator 21, and the axis of symmetry of the microstrip feed line 22 is located on the median line of the dielectric layer 10. The microstrip feed line 22 is provided with a first space 221 on the side close to the radiator 21, and the radiator 21 comprises a first extension 214, and a first gap 251 is formed between the first extension 214 and the microstrip feed line 22, the first gap 251 comprises a first sub-gap 2511 and a second sub-gap 2512, and the axes of symmetry of the first sub-gap 2511 and the second sub-gap 2512 are located on the median line of the dielectric layer 10. In the second direction Y, the first microstrip resonant unit 23 and the second microstrip resonant unit 24 are respectively arranged on the two sides of the microstrip feed line 22. The first direction X, the second direction Y and the third direction Z are perpendicular to each other.

[0045] In some embodiments, referring to Figure 6 The axis of symmetry of the radiator 21 is located on the median line of the dielectric layer 10. The radiator 21 comprises a first radiation patch 211, a second radiation patch 212 and a third radiation patch 213. The first radiation patch 211, the second radiation patch 212 and the third radiation patch 213 can form a polygon. In the second direction Y, the second radiation patch 212 is connected between the first radiation patch 211 and the third radiation patch 213. Further, in the first direction X, the length of the long axis of the first radiation patch 211 and the length of the long axis of the third radiation patch 213 are equal to the length of the second radiation patch 212. The first radiation patch 211 and the third radiation patch 213 are semi-elliptical, and the second radiation patch 212 is rectangular. The semi-elliptical first radiation patch 211 and the semi-elliptical third radiation patch 213 are connected to the two ends of the rectangular second radiation patch 212, so that the first radiation patch 211, the second radiation patch 212 and the third radiation patch 213 are connected compactly.

[0046] In some embodiments, referring to Figures 4 to 6 The end of the second radiation patch 212 close to the microstrip feed line 22 has a second gap 252 and a third gap 253, and the first extension 214 extends in the first space 221 and is perpendicular to the second gap 252 and the third gap 253. Further, in the second direction Y, the second gap 252 and the third gap 253 are respectively arranged on the two sides of the first extension 214, the length of the second gap 252 is equal to the length of the third gap 253, the second gap 252 and the third gap 253 can be distributed on the same horizontal line, and the second gap 252 and the third gap 253 are in communication with the first gap 251. The first gap 251, the second gap 252 and the third gap 253 form a gap region 25, and the gap region 25 is shaped like a "j" character.

[0047] In some embodiments, please refer to Figure 3 and Figure 4 The first microstrip resonant unit 23 and the second microstrip resonant unit 24 are symmetrically arranged about the perpendicular bisector of the dielectric layer 10. The first microstrip resonant unit 23 includes a first stub 231 and a second stub 232. The first stub 231 is parallel to the microstrip feed line 22, and the second stub 232 is perpendicular to the microstrip feed line 22. One end of the second stub 232 is connected to the end of the first stub 231 away from the radiator 21, and the other end of the second stub 232 extends in a direction away from the microstrip feed line 22. The second microstrip resonant unit 24 includes a third stub 241 and a fourth stub 242. The third stub 241 is parallel to the microstrip feed line 22 and the first stub 231, and the fourth stub 242 is perpendicular to the microstrip feed line 22. One end of the fourth stub 242 is connected to the end of the third stub 241 away from the radiator 21, and the other end of the fourth stub 242 extends in a direction away from the microstrip feed line 22. The first branch 231 and the third branch 241 are of equal length, and the second branch 232 and the fourth branch 242 are of equal length.

[0048] For the aforementioned radio frequency ground layer 30, please refer to... Figure 2 , Figure 7 and Figure 8 The radio frequency (RF) ground layer 30 is typically disposed on the back side of the antenna 100, and the axis of symmetry of the RF ground layer 30 is located on the perpendicular bisector of the dielectric layer 10. Specifically, the RF ground layer 30 includes a first RF patch 31, a second RF patch 32, and a third RF patch 33. Along the second direction Y, the second RF patch 32 is connected between the first RF patch 31 and the third RF patch 33. The first RF patch 31, the second RF patch 32, and the third RF patch 33 enclose a groove 34. Along the first direction X, the opening of the groove 34 faces the side away from the microstrip feed line 22.

[0049] In some embodiments, please refer to Figure 8 The first RF patch 31 and the third RF patch 33 are right-angled trapezoids, and the second RF patch 32 is rectangular. Along the first direction X, the upper base of the first RF patch 31 and the upper base of the third RF patch 33 are equal in width to the width of the second RF patch 32, so that the upper base of the first RF patch 31 and the upper base of the third RF patch 33 fits into the width of the second patch.

[0050] It should be noted that the radiation performance of antenna 100 is determined by the size parameters of radiator 21. The bandwidth and reflection coefficient of antenna 100 are jointly determined by the size parameters of radio frequency ground layer 30 and radiator 21. The center frequency of notch filtering and the isolation at the center frequency are jointly determined by the size parameters and positions of the first microstrip resonant unit 23 and the second microstrip resonant unit 24.

[0051] The embodiment of the present application provides an antenna 100, which comprises a dielectric layer 10, a radiation layer 20 and a radio frequency ground layer 30. The dielectric layer 10 comprises a first surface 11 and a second surface 12 arranged oppositely. The radiation layer 20 comprises a radiator 21 arranged on the first surface 11, a microstrip feed line 22, a first microstrip resonant unit 23 and a second microstrip resonant unit 24. In a first direction X, one end of the microstrip feed line 22 is connected with the radiator 21. A first space 221 is formed on the side of the microstrip feed line 22 close to the radiator 21, and the radiator 21 comprises a first extension 214, and a first gap 251 is formed between the first extension 214 and the microstrip feed line 22. In a second direction Y, the first microstrip resonant unit 23 and the second microstrip resonant unit 24 are arranged on the two sides of the microstrip feed line 22 respectively. The first direction X is perpendicular to the second direction Y. The radio frequency ground layer 30 is arranged on the second surface 12, and the radio frequency ground layer 30 is coupled with the radiation layer 20. The first gap 251 formed between the first extension 214 and the microstrip feed line 22 makes the antenna 100 have a band notch characteristic, and the first microstrip resonant unit 23 and the second microstrip resonant unit 24 arranged on the two sides of the microstrip feed line 22 respectively makes the antenna 100 have a high selectivity characteristic outside the band, and the band notch and the high selectivity outside the band can effectively suppress the band interference and efficiently utilize the spectrum resource.

[0052] In order to verify the concept of the antenna of the embodiment of the present application, the following simulation experiment is carried out:

[0053] The dielectric constant of the dielectric layer is 3.38, the dielectric loss is 0.0022, and the thickness of the dielectric layer is 0.4 mm. Please refer to Figure 9 and Figure 10 The radiation layer and the radio frequency ground layer are both plated with copper, and the thicknesses of the radiation layer and the radio frequency ground layer are both 0.035 mm.

[0054] The size parameters of the dielectric layer include: L A is the length of the dielectric layer, L A = 11.0 mm; W A is the width of the dielectric layer, W A = 11.0 mm.

[0055] The size parameters of the radio frequency ground layer include: L GM is the length of the second radio frequency patch, L GM = 3.75 mm; W GM is the width of the second radio frequency patch, and can also be the upper base length of the first radio frequency patch or the upper base length of the third radio frequency patch, W GM = 8.0 mm; L GRL is the lower base length of the first radio frequency patch or the lower base length of the third radio frequency patch, L GRL = 5.0 mm.

[0056] The size parameters of the radiator include: L P L is the length of the second radiating patch, or the length of the long axis of the first radiating patch or the length of the long axis of the third radiating patch, L P = 6.5 mm; W P W is the width of the second radiating patch, W P = 4.5 mm; L T L is the length of the short semi-axis of the first radiating patch or the length of the short semi-axis of the third radiating patch, L T = 1.3 mm.

[0057] The size parameters of the first microstrip resonant unit and the second microstrip resonant unit include: L1 is the length of the first branch or the length of the third branch, L1 = 2.05 mm; L2 is the length of the second branch or the length of the fourth branch, L2 = 1.05 mm; W1 is the width of the first branch or the width of the second branch or the width of the third branch or the width of the fourth branch, W1 = 0.1 mm; S is the distance between the first microstrip resonant unit and the microstrip feed line, or the distance between the second microstrip resonant unit and the microstrip feed line, S = 0.1 mm.

[0058] The size parameters of the microstrip feed line include: L SV L is the length of the first gap, L SV = 3.3 mm; L SH L is the length of the second gap or the length of the third gap, L SH = 0.5 mm; W S W is the width of the second gap or the width of the third gap, W S = 0.1 mm; D1 is the distance from the top of the first gap to the edge of the dielectric plate, D1 = 1.2 mm; D2 is the distance between the first sub-gap and the second sub-gap, D2 = 0.24 mm; L F L is the length of the microstrip feed line, L F = 4.0 mm; W F W is the width of the microstrip feed line, W F = 0.84 mm.

[0059] The in-band notch is realized by adding a gap region to introduce a transmission zero point, and the frequency corresponding to the transmission zero point, i.e. the center frequency of the in-band notch, is related to the size parameters of the gap region as follows:

[0060]

[0061] wherein, r is the dielectric constant of the dielectric layer, and c is the speed of light in vacuum.

[0062] The high selectivity at the upper passband edge is achieved by adding the first microstrip resonant unit and the second microstrip resonant unit to introduce a transmission zero point. The frequency corresponding to the transmission zero point has the following relationship with the size of the first microstrip resonant unit and the second microstrip resonant unit:

[0063]

[0064] wherein, r is the dielectric constant of the medium, and c is the speed of light in vacuum.

[0065] Figure 11 is a simulation diagram of the VSWR of the super-wideband planar antenna after parameter optimization of the embodiment of the application, as shown in Figure 11 The impedance bandwidth range with a reflection coefficient less than -10 dB is 9.8 GHz to 30.8 GHz, the center frequency is 20.3 GHz, the absolute bandwidth is 21 GHz, the relative bandwidth is 101%, and the super-wideband characteristics are exhibited. There are four transmission poles in the passband, which are respectively located at 11.4 GHz, 16 GHz, 22.3 GHz and 29.4 GHz, which ensures the flatness of the maximum gain and the radiation efficiency in the passband. There is a transmission zero point in the passband to form a notch, which is located at 13.7 GHz and can effectively suppress the in-band notch. There is a transmission zero point near the upper passband edge, which is located at 33 GHz and can improve the selectivity of the antenna and thus improve the utilization rate of the spectrum resource.

[0066] Figure 12 is a simulation result diagram of the maximum gain and the radiation efficiency of the antenna of the embodiment of the application. As shown in Figure 12 It can be known that, in the passband, the average maximum gain is 4.31 dBi, which exhibits the advantage of high maximum gain. In the passband, the average radiation efficiency is 96.78%, which exhibits the advantage of high radiation efficiency. At the center frequency of the notch, the maximum gain is only -8.57 dBi and the radiation efficiency is 32.55%, which, compared with the average maximum gain and the average radiation efficiency in the passband, indicates that the antenna has high isolation at the center frequency of the notch. At 6 GHz, the maximum gain is only -4.48 dBi and the radiation efficiency is 21.95%, which, compared with the maximum gain of 2.51 dBi and the radiation efficiency of 92.67% at 9.8 GHz, indicates that the antenna has high selectivity at the lower passband edge. At 33 GHz, the maximum gain is only -3.75 dBi and the radiation efficiency is 19.86%, which, compared with the maximum gain of 5.15 dBi and the radiation efficiency of 94.21% at 30.8 GHz, indicates that the antenna has high selectivity at the upper passband edge. From the above analysis, it can be known that the antenna not only has high gain and high radiation efficiency in the passband, but also has high isolation at the center frequency of the notch and high selectivity at the upper and lower passband edges.

[0067] Figure 13 is a radiation pattern of the antenna at 10.0 GHz,Figure 14 is a radiation pattern of the antenna at 20.0 GHz, Figure 15 is a radiation pattern of the antenna at 30.0 GHz. According to Figures 13 to 15 The antenna is an omnidirectional antenna.

[0068] In a second aspect, the embodiments of the present application provide a communication device comprising the antenna of any one of the first aspect.

[0069] It should be noted that the preferred embodiments of the present application are shown in the specification and drawings of the present application, but the present application can be realized in many different forms, and is not limited to the embodiments described in the specification. These embodiments are not additional limitations on the content of the present application, and the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive. Furthermore, the above technical features continue to be combined with each other, forming various embodiments not listed above, which are considered to be within the scope of the present application. Furthermore, for those skilled in the art, the above description can be improved or transformed, and all these improvements and transformations should be within the protection scope of the appended claims of the present application.

Claims

1. An antenna, characterized by The antenna comprises: a medium layer comprising a first surface and a second surface arranged oppositely; a radiation layer comprising a radiator, a microstrip feed line, a first microstrip resonant unit and a second microstrip resonant unit arranged on the first surface; in a first direction, one end of the microstrip feed line is connected to the radiator; a first space is formed on one side of the microstrip feed line close to the radiator; the radiator comprises a first extension part, and a first gap is formed between the first extension part and the microstrip feed line; in a second direction, the first microstrip resonant unit and the second microstrip resonant unit are respectively arranged on two sides of the microstrip feed line; wherein the first direction is perpendicular to the second direction; a radio frequency ground layer arranged on the second surface, and the radio frequency ground layer is coupled with the radiation layer.

2. The antenna according to claim 1, characterized in that, The first microstrip resonant unit and the second microstrip resonant unit are symmetrically arranged about the median line of the medium layer.

3. The antenna of claim 2, wherein, The first microstrip resonant unit comprises a first branch and a second branch, one end of the second branch is connected to one end of the first branch away from the radiator, and the other end of the second branch extends in a direction away from the microstrip feed line; The second microstrip resonant unit comprises a third branch and a fourth branch, one end of the fourth branch is connected to one end of the third branch away from the radiator, and the other end of the fourth branch extends in a direction away from the microstrip feed line.

4. The antenna according to claim 1, wherein, The radiator comprises a first radiation patch, a second radiation patch and a third radiation patch, and in the second direction, the second radiation patch is connected between the first radiation patch and the third radiation patch; The second radiation patch has a second gap and a third gap near the end of the microstrip feed line, and the first extension part extends in the first space and is perpendicular to the second gap and the third gap.

5. The antenna according to claim 4, characterized in that, In the second direction, the second gap and the third gap are respectively arranged on two sides of the first extension part, and the second gap and the third gap are in communication with the first gap.

6. The antenna according to claim 4, wherein, The first radiation patch and the third radiation patch are semi-elliptical, and the second radiation patch is rectangular; In the first direction, the length of the major axis of the first radiation patch and the length of the major axis of the third radiation patch are equal to the length of the second radiation patch.

7. The antenna according to claim 1, wherein, The radio frequency ground layer comprises a first radio frequency patch, a second radio frequency patch and a third radio frequency patch, and in the second direction, the second radio frequency patch is connected between the first radio frequency patch and the third radio frequency patch, and the first radio frequency patch, the second radio frequency patch and the third radio frequency patch enclose a groove; In the first direction, the opening of the groove faces away from the side of the microstrip feed line.

8. The antenna according to claim 7, characterized in that The first radio frequency patch and the third radio frequency patch are right trapezoids, and the second radio frequency patch is rectangular; In the first direction, the upper base of the first radio frequency patch and the upper base of the third radio frequency patch are equal to the width of the second radio frequency patch.

9. The antenna according to any one of claims 1 to 8, characterized in that, The antenna satisfies at least one of the following conditions: a. The symmetry axis of the radiator is located on the median line of the medium layer; b. The symmetry axis of the microstrip feed line is located on the median line of the medium layer; c. the symmetry axis of the radio frequency ground layer is located on the median line of the dielectric layer; d. the first gap comprises a first sub-gap and a second sub-gap, and the symmetry axes of the first sub-gap and the second sub-gap are located on the median line of the dielectric layer.

10. A communication device, characterized by An antenna comprising any one of claims 1 to 9.

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