Display device

Abstract

A display device is provided. The display device includes: a display panel including a plurality of unit regions and providing source light, each of the plurality of unit regions including a plurality of sub-pixel regions and a transmissive region adjacent to the plurality of sub-pixel regions in a first direction; and an optical layer disposed on the display panel, transmitting the source light or converting the source light into light of different wavelengths. The plurality of unit regions includes: a first unit region; and a second cell region adjacent to the first cell region in a second direction crossing the first direction. The transmissive region of the first unit region and the transmissive region of the second unit region are adjacent in the second direction, and a first intermediate region is defined between the transmissive region of the first unit region and the transmissive region of the second unit region. The optical layer includes a blocking pattern overlapping at least the first intermediate region on a plane.

Description

TECHNICAL FIELD

[0001] The utility model relates to a kind of display devices, more specifically, a kind of display device is improved in improving transmittance while improving durability. BACKGROUND

[0002] Multimedia devices such as televisions, portable phones, tablet computers, navigators, game consoles, etc. include display devices that display images to users through display screens. The display device can include a display panel that generates an image and an optical layer that includes a light control pattern for improving the light extraction efficiency of the display panel. The light control pattern can transmit only a partial wavelength range of a light source, or can convert the color of the light source. Some light control patterns can also change the characteristics of light without changing the color of the light source.

[0003] Recently, with the development of technology, transparent display devices that are transparent in a transmissive area within a display area are being developed. SUMMARY

[0004] TECHNICAL PROBLEM

[0005] The utility model aims at providing a display device that improves durability by preventing the occurrence of defects while improving the transmittance of a display area.

[0006] TECHNICAL SOLUTION

[0007] A display device according to an embodiment of the utility model includes a display panel including a plurality of unit areas and providing a source light, each of the plurality of unit areas including a plurality of sub-pixel areas and a transmissive area adjacent to the plurality of sub-pixel areas in a first direction; and an optical layer disposed on the display panel, transmitting the source light or converting the source light into light of a different wavelength. The plurality of unit areas includes a first unit area; and a second unit area adjacent to the first unit area in a second direction intersecting the first direction. The transmissive area of the first unit area and the transmissive area of the second unit area are adjacent in the second direction, and a first intermediate area is defined between the transmissive area of the first unit area and the transmissive area of the second unit area. The optical layer includes a blocking pattern overlapping at least the first intermediate area on a plane.

[0008] The optical layer can further include a light control layer. The light control layer can include a bank disposed on the display panel and defined with a plurality of bank opening portions corresponding to the plurality of sub-pixel areas, respectively; and a plurality of light control patterns disposed inside the plurality of bank opening portions, respectively.

[0009] The bank can be defined with an open portion corresponding to the transmissive area. At least a portion of the blocking pattern can be disposed within the open portion.

[0010] The barrier pattern can include a barrier portion disposed in the open portion, and a spacer portion overlapping the bank in plan. The barrier portion and the spacer portion can be composed of the same substance.

[0011] The spacer portion and the barrier portion can be connected to each other to have an integrated shape.

[0012] The barrier portion can be spaced apart from an inner side surface of the bank defining the open portion.

[0013] The barrier pattern can have a thickness smaller than a thickness of the bank.

[0014] The optical layer can further include a color filter layer disposed on the light control layer and including a plurality of color filters.

[0015] The plurality of unit areas can further include a third unit area adjacent to the first unit area in the first direction, and a fourth unit area adjacent to the third unit area in the second direction. The transmissive region of the third unit area and the transmissive region of the fourth unit area can be adjacent in the second direction, and a second intermediate region can be defined between the transmissive region of the third unit area and the transmissive region of the fourth unit area. The barrier pattern can include a first barrier pattern overlapping the first intermediate region, and a second barrier pattern overlapping the second intermediate region.

[0016] The plurality of unit areas can further include a fifth unit area adjacent to the second unit area in the second direction, and a sixth unit area adjacent to the fifth unit area in the first direction. The transmissive region of the second unit area and the transmissive region of the fifth unit area can be adjacent in the second direction, and a third intermediate region can be defined between the transmissive region of the second unit area and the transmissive region of the fifth unit area. The barrier pattern can not overlap the third intermediate region.

[0017] The transmissive region of the fourth unit area and the transmissive region of the sixth unit area can be adjacent in the second direction, and a fourth intermediate region can be defined between the transmissive region of the fourth unit area and the transmissive region of the sixth unit area. The barrier pattern can further include a third barrier pattern overlapping the fourth intermediate region.

[0018] The barrier pattern can be composed of an optically transparent substance.

[0019] The plurality of sub-pixel regions can include a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region arranged in sequence in the second direction. The transmission region can overlap the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region, respectively, in the first direction.

[0020] A display device according to an embodiment of the present disclosure can further include a filler disposed between the display panel and the optical layer.

[0021] The display panel can include a plurality of light emitting elements that generate the source light, and signal lines, at least a portion of which is electrically connected to the plurality of light emitting elements. At least a portion of the signal lines can overlap the blocking pattern in a plane.

[0022] The display panel can further include an encapsulation layer that covers the plurality of light emitting elements. The encapsulation layer can include at least one encapsulation inorganic film and at least one encapsulation organic film.

[0023] The display panel can further include a pixel definition film in which a light emitting opening portion in which each of the plurality of light emitting elements is disposed and a transmission opening portion corresponding to the transmission region are defined.

[0024] A display device according to an embodiment of the present disclosure can include a display panel including a plurality of unit regions and providing source light, each of the plurality of unit regions including a plurality of sub-pixel regions and a transmission region adjacent to the plurality of sub-pixel regions in a first direction, and an optical layer disposed on the display panel and transmitting or converting the source light into light of a different wavelength. The plurality of unit regions can include a first unit region and a second unit region adjacent to the first unit region in a second direction intersecting the first direction. The optical layer can include a light control layer including a bank in which a plurality of bank opening portions corresponding to the plurality of sub-pixel regions and an open portion corresponding to the transmission region are defined, and a plurality of light control patterns disposed inside the plurality of bank opening portions, respectively, and a blocking pattern disposed between the transmission region of the first unit region and the transmission region of the second unit region in a plane, and at least a portion of the blocking pattern is disposed inside the open portion.

[0025] The blocking pattern can be composed of an optically transparent substance.

[0026] According to an embodiment of the present application, a display device includes a display panel including a plurality of unit areas and providing source light, each of the plurality of unit areas including a plurality of sub-pixel areas and a transmissive area adjacent to the plurality of sub-pixel areas in a first direction; and an optical layer disposed on the display panel, which transmits the source light or converts the source light into light of a different wavelength. The plurality of unit areas includes a first unit area; and a second unit area adjacent to the first unit area in a second direction intersecting the first direction. The optical layer includes banks defined with a plurality of bank opening portions corresponding to the plurality of sub-pixel areas, respectively, and an open portion corresponding to the transmissive area; and a block pattern, a portion of the block pattern being disposed between the transmissive area of the first unit area and the transmissive area of the second unit area in a plane. The block pattern includes a block portion disposed between the transmissive area of the first unit area and the transmissive area of the second unit area in a plane; and a spacing portion overlapping the banks in a plane, the spacing portion being composed of the same substance as the block portion.

[0027] Technical effects

[0028] According to an embodiment of the present application, a display device includes a display panel including a plurality of unit areas and providing source light, each of the plurality of unit areas including a plurality of sub-pixel areas and a transmissive area adjacent to the plurality of sub-pixel areas in a first direction; and an optical layer disposed on the display panel, which transmits the source light or converts the source light into light of a different wavelength. The plurality of unit areas includes a first unit area; and a second unit area adjacent to the first unit area in a second direction intersecting the first direction. The optical layer includes banks defined with a plurality of bank opening portions corresponding to the plurality of sub-pixel areas, respectively, and an open portion corresponding to the transmissive area; and a block pattern, a portion of the block pattern being disposed between the transmissive area of the first unit area and the transmissive area of the second unit area in a plane. The block pattern includes a block portion disposed between the transmissive area of the first unit area and the transmissive area of the second unit area in a plane; and a spacing portion overlapping the banks in a plane, the spacing portion being composed of the same substance as the block portion. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1a is a perspective view of an electronic device according to an embodiment of the present application.

[0030] Figure 1b is a perspective view of a bent electronic device according to an embodiment of the present application.

[0031] Figure 2 is a cross-sectional view of a display device according to an embodiment of the present application.

[0032] Figure 3 is a plan view of a display device according to an embodiment of the present application.

[0033] Figure 4 is an equivalent circuit diagram of a pixel according to an embodiment of the present application.

[0034] Figure 5a is a plan view of a portion of a display area of a display device according to an embodiment of the present application.

[0035] Figure 5bis a plan view of a part of a part configuration of a display device according to an embodiment of the present application.

[0036] Figure 6 and Figure 7 are cross-sectional views of a display device according to an embodiment of the present application, respectively.

[0037] Figure 8 is a cross-sectional view of a light emitting element according to an embodiment of the present application.

[0038] Figure 9a and Figure 9b are cross-sectional views of a part of an optical layer according to an embodiment of the present application, respectively.

[0039] Figure 10 is a cross-sectional view of a part of an optical layer according to an embodiment of the present application.

[0040] Figure 11 is a cross-sectional view of a part of a display device according to an embodiment of the present application.

[0041] Figure 12a and Figure 12b are plan views of a part of a part configuration of a display device according to an embodiment of the present application, respectively.

[0042] BRIEF DESCRIPTION OF REFERENCE NUMERALS

[0043] DP: display panel DP-LED: display element layer

[0044] OSL: optical layer PU: unit region

[0045] PU-1: first unit region PU-2: second unit region

[0046] TA1: first transmission region TA2: second transmission region

[0047] MA1: first intermediate region BP: barrier pattern DETAILED DESCRIPTION

[0048] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings.

[0049] In the present specification, in the case where it is mentioned that a certain configuration element (or, region, layer, part, etc.) is "on" another configuration element or is "connected" or "combined" with another configuration element, it means that it can be directly disposed on or directly connected / combined with another configuration element, or a third configuration element can be disposed therebetween.

[0050] The same reference numbers are used throughout different drawings to refer to the same or like parts. Also, in the drawings, the thickness, ratio, and size of a constituent are exaggerated for the sake of clear and convenient explanation of the technical content. "And / or" includes all combinations of one or more of the relevant constituents that can be defined.

[0051] The terms "first", "second", and so on can be used to describe various constituents, but these constituents should not be limited by these terms. These terms are used only for the purpose of distinguishing one constituent from another constituent. For example, a first constituent can be named a second constituent, and similarly, a second constituent can be named a first constituent, without departing from the scope of the present application. Unless otherwise clearly defined in the context, a singular expression includes a plural expression.

[0052] Also, the terms "below", "lower", "above", "upper", and so on are used to describe the relative relationship of the constituents shown in the drawings. These terms are relative concepts, which are described based on the direction shown in the drawings.

[0053] The terms "include" or "have" and so on should be understood to designate the existence of the characteristics, numbers, steps, operations, constituents, components, or combinations thereof described in the specification, rather than precluding the existence or additional possibility of one or more other characteristics, numbers, steps, operations, constituents, components, or combinations thereof.

[0054] In the present specification, "directly disposed" can mean that there is no additional layer, film, region, plate, or the like between a layer, film, region, plate, or the like and another part. For example, "directly disposed" can mean disposed without using an additional part such as an adhesive part between two layers or two components.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. Also, the terms should be interpreted as having a meaning that is consistent with their meaning in the context of related art, unless otherwise defined herein, and should not be interpreted in an idealized or overly formal sense.

[0056] Hereinafter, a display device according to an embodiment of the present application will be described with reference to the accompanying drawings.

[0057] Figure 1a is a perspective view of an electronic device according to an embodiment of the present application. Figure 1b is a perspective view of a bent electronic device according to an embodiment of the present application. Figure 2 is a cross-sectional view of a display device according to an embodiment of the present application.

[0058] Figure 1a and Figure 1b The electronic device ED, ED-1 shown in FIG. 1 can include a display device DD and a housing HU which accommodates at least a portion of the display device DD. For example, a portion of a lower end of the display device DD can be accommodated in the housing HU.

[0059] Referring to Figure 1a , the display device DD can display an image through a front surface D-U. An upper surface of a component disposed at an uppermost side of the display device DD can be defined as the front surface D-U of the display device DD. According to the present disclosure, Figure 2 an upper surface of the window WD can be defined as the front surface D-U of the display device DD.

[0060] In the present embodiment, the front surface D-U is parallel to a surface defined by a first direction DR1 and a second direction DR2. A normal direction of the front surface D-U (i.e., a thickness direction of the display device DD) is indicated by a third direction DR3. Front and rear surfaces (or upper and lower surfaces) of each layer or each unit described below are distinguished by the third direction DR3, and the third direction DR3 is described as an upper direction, and an opposite direction of the third direction DR3 is described as a lower direction.

[0061] The display device DD according to the present disclosure can be a transparent display device DD. The transparent display device DD can display information in a state in which an object PD disposed at a rear of the display device DD is transparently mapped to the front surface D-U of the display device DD. Accordingly, a user can recognize the object PD disposed at the rear of the display device DD from the front surface D-U of the display device DD. The information is an image, content, a play screen, an application execution screen, a web browser screen, various graphic objects, etc., and is not limited to any one of them. In Figure 1b In the present embodiment, a vase is shown as an example of the object PD, but is not limited thereto, and the object PD is an object having a specific shape, and is not limited to any one of them as long as it is an object.

[0062] The housing HU can protect the display device DD from external impact or intrusion of foreign matter. The housing HU can be configured of a plastic, a metal, etc. However, this is exemplary, and is not limited thereto as long as it can protect the display device DD from external impact or intrusion of foreign matter. The electronic device ED according to an embodiment can omit the housing HU, but the display device DD can also be disposed inside the housing HU by being curled by a separate hinge component, and is not limited to any one of the embodiments.

[0063] Referring to Figure 1bAccording to an embodiment, the electronic device ED-1 can be curved in a second direction DR2 with reference to a virtual axis AX extending in a first direction DR1. Accordingly, the display device DD can be curved with a predetermined curvature, and the housing HU can have a curvature corresponding thereto. Without being limited thereto, the axis can also extend in the second direction DR2, or the electronic device ED-1 can be curved with reference to a plurality of axes extending in different directions from each other.

[0064] Further, the display device DD can be a rollable display panel or a foldable display panel or a slidable display panel, and in one operating state, the entire display device DD can be disposed inside the housing HU. Thereby, the display device DD can also include a curved display surface or a stereoscopic display surface. The stereoscopic display surface can also include a plurality of display areas indicating different directions from each other.

[0065] Referring to Figure 2 According to the present disclosure, the display device DD can include a display panel DP, an optical layer OSL, and a window WD. The display panel DP can include a base substrate BS and a circuit element layer DP-CL, a display element layer DP-LED, and a packaging layer TFE disposed on the base substrate BS. The display device DD can further include functional layers such as an anti-reflection layer or a refractive index adjustment layer.

[0066] The display panel DP, as a light emitting type display panel, can be one of a liquid crystal display panel, an electrophoretic display panel, a micro electromechanical system display panel, an electrowetting display panel, an organic light emitting display panel, an inorganic light emitting display panel, and a quantum-dot display panel, and is not particularly limited.

[0067] The base substrate BS can include a synthetic resin layer. The synthetic resin layer can include a thermosetting resin. In particular, the synthetic resin layer can be a polyimide-based resin layer, the material of which is not particularly limited. The synthetic resin layer can include at least one of an acrylic resin, a methacrylic resin, a polyisoprene resin, an ethylene resin, an epoxy resin, a urethane resin, a cellulose resin, a silicone resin, a polyamide resin, and a perylene resin. In addition, the base substrate BS can include a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, etc.

[0068] The circuit element layer DP-CL includes at least a plurality of insulating layers and circuit elements. The insulating layers described below can include organic layers and / or inorganic layers. The insulating layers, semiconductor layers, and conductive layers are formed by processes such as coating, deposition, etc. Then, the insulating layers, semiconductor layers, and conductive layers can be selectively patterned by a photolithography process and an etching process. The semiconductor patterns, conductive patterns, signal lines, etc. are formed by these processes. The patterns disposed on the same layer are formed by the same process.

[0069] The circuit element layer DP-CL includes a driving circuit or a signal line that drives a pixel. The display element layer DP-LED can include a light emitting element LED included in a pixel (refer to Figure 6 ) and a pixel definition film PDL (refer to Figure 6 ).

[0070] The encapsulation layer TFE can be disposed on the display element layer DP-LED and protect the light emitting element LED. The encapsulation layer TFE can include an encapsulation inorganic film and an encapsulation organic film disposed between the encapsulation inorganic films. The encapsulation inorganic film can protect the light emitting element LED from moisture and oxygen, and the encapsulation organic film can protect the light emitting element LED from foreign substances such as dust particles.

[0071] The optical layer OSL can include a light control pattern capable of converting optical properties of source light generated at the light emitting element LED. In addition, the optical layer OSL can reduce reflectivity of external light incident from the upper side of the window WD. The light control pattern can include quantum dots, and the optical layer OSL can include a color filter that selectively transmits light passing through the light control pattern. According to an embodiment, the optical layer OSL can be omitted.

[0072] The window WD can be disposed at the upper portion of the display panel DP and transmit an image provided from the display panel DP to the outside. The window WD can include a base layer and a functional layer disposed on the base layer. The functional layer can include a protective layer, an anti-fingerprint layer, etc. The base layer of the window WD can be composed of glass, sapphire, or plastic, etc.

[0073] Although not shown, the display device DD of one embodiment can further include an input sensor arranged between the display panel DP and the optical layer OSL. The input sensor can be arranged directly on the display panel DP. The input sensor can sense a user's input in an electromagnetic induction manner and / or a capacitive manner, for example. The display panel DP and the input sensor can be formed through a continuous process. Here, "directly arranged" can mean that no third constituent element is arranged between the input sensor and the display panel DP. For example, no additional adhesive layer can be arranged between the input sensor and the display panel DP.

[0074] Figure 3 is a plan view of a display device according to one embodiment of the present application.

[0075] Referring to Figure 3 , the display device DD according to one embodiment can include a pixel arranged in a unit region PU, a gate driver circuit GDC connected to the pixel, and a signal line.

[0076] The display device DD can include a display region DA and a non-display region NDA. A functional layer FNL of the pixel arranged in the unit region PU is arranged in the display region DA (see Figure 6 ), and a light emitting layer is not arranged in the non-display region NDA. The non-display region NDA can surround the display region DA. In one embodiment of the present application, the non-display region NDA can be omitted, or can be arranged only on one side of the display region DA. In addition, in Figure 3 , shapes in which the display region DA and the non-display region NDA are defined in the display device DD are exemplarily shown, and the display region DA and the non-display region NDA can be defined in correspondence with the display panel DP included in the display device DD.

[0077] The unit region PU can be provided as a plurality within the display region DA. The unit region PU can be arranged along a first direction DR1 and a second direction DR2. The unit region PU can include a light emitting region for causing the display panel DP to provide information to a user, a transmission region for improving transparency of the display panel DP to enable an object PD arranged behind the display panel DP to be transmitted to the user, and a wiring region for the signal line connected to the pixel to be arranged.

[0078] The gate driver circuit GDC can be arranged in the non-display region NDA. The gate driver circuit GDC can be integrated to the display panel DP through a silicon oxide gate driver circuit (OSG) or an amorphous silicon gate driver circuit (ASG) process.

[0079] Figure 4 is an equivalent circuit diagram of a pixel according to an embodiment of the present application.

[0080] Figure 4 An exemplary circuit diagram with respect to one of the pixels PXij arranged in a unit region PU (refer to Figure 3 ) is shown in FIG. 1.

[0081] Referring to Figure 4 , the pixel PXij can include a pixel circuit PC and a light emitting element LED. The pixel circuit PC can include a plurality of transistors T1-T3 and a capacitor Cst.

[0082] The plurality of transistors T1-T3 can be formed by a low temperature polycrystalline silicon (LTPS: Low Temperature Polycrystalline Silicon) process or a low temperature polycrystalline oxide (LTPO: Low Temperature Polycrystalline Oxide) process. Each of the first transistor T1, the second transistor T2, and the third transistor T3 can include one of a silicon semiconductor and an oxide semiconductor. At this time, the oxide semiconductor can include a crystalline or amorphous oxide semiconductor, and the silicon semiconductor can include amorphous silicon, polycrystalline silicon, etc., but is not limited to any one embodiment.

[0083] Hereinafter, the first transistor T1, the second transistor T2, and the third transistor T3 are described as N-type, but are not limited thereto. Each of the first transistor T1, the second transistor T2, and the third transistor T3 can be a P-type transistor or an N-type transistor according to a signal applied thereto. At this time, the source and the drain of the P-type transistor can correspond to the drain and the source of the N-type transistor, respectively.

[0084] Figure 4 An exemplary pixel PXij connected with an i-th scan line SCLi, an i-th sensing line SSLi, a j-th data line DLj, and a j-th reference line RLj is shown in FIG. 1.

[0085] Figure 4 The pixel PXij shown in FIG. 1 can correspond to one of the pixels included in the unit region PU (refer to Figure 3 ). The pixel circuit PC can include a first transistor (a driving transistor) T1, a second transistor (a switching transistor) T2, a third transistor (a sensing transistor) T3, and a capacitor Cst. However, the pixel circuit PC can further include additional transistors and additional capacitors, and is not limited to any one embodiment.

[0086] The first transistor T1, the second transistor T2, and the third transistor T3 can each include a source S1, S2, S3, a drain D1, D2, D3, and a gate G1, G2, G3.

[0087] The light emitting element LED can be an organic light emitting element or an inorganic light emitting element including an anode (first electrode) and a cathode (second electrode). The anode of the light emitting element LED can receive the first voltage ELVDD through the first transistor T1, and the cathode of the light emitting element LED can receive the second voltage ELVSS. The light emitting element LED can emit light by receiving the first voltage ELVDD and the second voltage ELVSS.

[0088] The first transistor T1 can include the drain D1 receiving the first voltage ELVDD, the source S1 connected to the anode of the light emitting element LED, and the gate G1 connected to the capacitor Cst. The first transistor T1 can control a driving current flowing from the first voltage ELVDD to the light emitting element LED in correspondence with a voltage value stored in the capacitor Cst.

[0089] The second transistor T2 can include the drain D2 connected to the jth data line DLj, the source S2 connected to the capacitor Cst, and the gate G2 receiving the ith write scan signal SCi. The second transistor T2 provides the data voltage Vd to the first transistor T1 in response to the ith write scan signal SCi.

[0090] The third transistor T3 can include the source S3 connected to the jth reference line RLj, the drain D3 connected to the anode of the light emitting element LED, and the gate G3 receiving the ith sample scan signal SSi. The jth reference line RLj can receive the reference voltage Vr.

[0091] The capacitor Cst can store a voltage difference according to a plurality of values of an input signal. For example, the capacitor Cst can store a voltage corresponding to a difference between a voltage received from the second transistor T2 and the first voltage ELVDD.

[0092] In the present application, the equivalent circuit of the pixel PXij is not limited to Figure 4 In another embodiment of the present application, the pixel PXij can be implemented in various forms for causing the light emitting element LED to emit light.

[0093] Figure 5a is a plan view showing a part of a display area of a display device according to an embodiment of the present application. Figure 5a shows Figure 3 the arrangement on a plane of a part of the unit area PU shown in FIG. 1. Figure 5a shows Figure 3three columns of unit regions arranged along the first direction DR1 and three rows of unit regions arranged along the second direction DR2 in a unit region PU.

[0094] Referring to FIG. 1 together, Figure 3 and Figure 5a The unit region PU includes a first unit region PU-1 and a second unit region PU-2. The second unit region PU-2 is spaced apart from the first unit region PU-1 in the second direction DR2. The second unit region PU-2 can be arranged side by side with the first unit region PU-1 in the second direction DR2, and can be the most adjacent unit region to the first unit region PU-1 in the second direction DR2.

[0095] The first unit region PU-1 includes a first pixel region PXA1 and a first transmissive region TA1 spaced apart from the first pixel region PXA1 in the first direction DR1. The second unit region PU-2 includes a second pixel region PXA2 and a second transmissive region TA2 spaced apart from the second pixel region PXA2 in the first direction DR1.

[0096] The first pixel region PXA1 can include a plurality of sub-pixel regions PXA1-1, PXA1-2, PXA1-3. The first pixel region PXA1 can include a 1-1st sub-pixel region PXA1-1, a 1-2nd sub-pixel region PXA1-2, and a 1-3rd sub-pixel region PXA1-3 arranged in order in the second direction DR2. Each of the 1-1st sub-pixel region PXA1-1, the 1-2nd sub-pixel region PXA1-2, and the 1-3rd sub-pixel region PXA1-3 can overlap the first transmissive region TA1 in the first direction DR1.

[0097] The second pixel region PXA2 can include a plurality of sub-pixel regions PXA2-1, PXA2-2, PXA2-3. The second pixel region PXA2 can include a 2-1st sub-pixel region PXA2-1, a 2-2nd sub-pixel region PXA2-2, and a 2-3rd sub-pixel region PXA2-3 arranged in order in the second direction DR2. Each of the 2-1st sub-pixel region PXA2-1, the 2-2nd sub-pixel region PXA2-2, and the 2-3rd sub-pixel region PXA2-3 can overlap the second transmissive region TA2 in the first direction DR1.

[0098] In addition, the non-pixel region NPXA can surround each of the pixel region PXA included in each unit region PU and the transmissive region TA adjacent to the pixel region PXA.

[0099] According to the present application, the wavelength of the source light provided from the plurality of sub-pixel regions included in the pixel region PXA can be different from each other. For example, the first sub-pixel region PXA-1 (e.g., the 1st-1 sub-pixel region PXA1-1 and the 2nd-1 sub-pixel region PXA2-1) can provide red light, the second sub-pixel region PXA-2 (e.g., the 1st-2 sub-pixel region PXA1-2 and the 2nd-2 sub-pixel region PXA2-2) can provide green light, and the third sub-pixel region PAX-3 (e.g., the 1st-3 sub-pixel region PXA1-3 and the 2nd-3 sub-pixel region PXA2-3) can provide blue light.

[0100] Each pixel region PXA can be defined by a light emitting opening portion PDL-OP (refer to FIG. 2) provided in a pixel definition film PDL (refer to FIG. 2), and the transmission region TA can be defined by a transmission opening portion T-OP (refer to FIG. 2) provided in the pixel definition film PDL (refer to FIG. 2). Figure 6 Figure 6 Each pixel region PXA can be defined by a light emitting opening portion PDL-OP (refer to FIG. 2) provided in a pixel definition film PDL (refer to FIG. 2), and the transmission region TA can be defined by a transmission opening portion T-OP (refer to FIG. 2) provided in the pixel definition film PDL (refer to FIG. 2). Figure 7 Figure 7 Each pixel region PXA can be defined by a light emitting opening portion PDL-OP (refer to FIG. 2) provided in a pixel definition film PDL (refer to FIG. 2), and the transmission region TA can be defined by a transmission opening portion T-OP (refer to FIG. 2) provided in the pixel definition film PDL (refer to FIG. 2).

[0101] In the display region DA of the display device of one embodiment, the area of each transmission region TA is larger than the area of each pixel region PXA. In one unit region PU, the area of the transmission region TA is larger than the area on the plane of the pixel region PXA. In one embodiment, the area on the plane of the first transmission region TA1 included in the first unit region PU-1 can be larger than the sum of the areas on the planes of the sub-pixel regions PXA1-1, PXA1-2, PXA1-3 included in the first unit region PU-1. The area on the plane of the second transmission region TA2 included in the second unit region PU-2 can be larger than the sum of the areas on the planes of the sub-pixel regions PXA2-1, PXA2-2, PXA2-3 included in the second unit region PU-2. In one unit region PU, the area on the plane of the transmission region TA can be 60% or more, based on the total area of the transmission region TA and the pixel region PXA. In the first unit region PU-1, the area on the plane of the first transmission region TA1 can be 60% or more, based on the total area of the first transmission region TA1 and the sub-pixel regions PXA1-1, PXA1-2, PXA1-3. In the second unit region PU-2, the area on the plane of the second transmission region TA2 can be 60% or more, based on the total area of the second transmission region TA2 and the sub-pixel regions PXA2-1, PXA2-2, PXA2-3. The display device of one embodiment includes a transmission region larger than a light emitting region, and thus the transmittance of the display device is improved, so that the display device can be used as a transparent display device.

[0102] ​​The unit region PU can further include a third unit region PU-3, a fourth unit region PU-4, a fifth unit region PU-5, and a sixth unit region PU-6. The third unit region PU-3 can be spaced apart from the first unit region PU-1 in the first direction DR1. The third unit region PU-3 can be side by side with the first unit region PU-1 in the first direction DR1, and can be the most adjacent unit region to the first unit region PU-1 in the first direction DR1. The fourth unit region PU-4 can be spaced apart from the third unit region PU-3 in the second direction DR2. The fourth unit region PU-4 can be side by side with the third unit region PU-3 in the second direction DR2, and can be the most adjacent unit region to the third unit region PU-3 in the second direction DR2. The fifth unit region PU-5 can be spaced apart from the second unit region PU-2 in the second direction DR2. The fifth unit region PU-5 can be side by side with the second unit region PU-2 in the second direction DR2, and can be the most adjacent unit region to the second unit region PU-2 in the second direction DR2. The sixth unit region PU-6 can be spaced apart from the fourth unit region PU-4 in the second direction DR2. The sixth unit region PU-6 can be side by side with the fourth unit region PU-4 in the second direction DR2, and can be the most adjacent unit region to the fourth unit region PU-4 in the second direction DR2.

[0103] The third unit region PU-3 includes a third pixel region PXA3 including 3-1, 3-2, and 3-3 sub-pixel regions PXA3-1, PXA3-2, and PXA3-3 arranged spaced apart in the second direction DR2, and a third transmission region TA3 spaced apart from the third pixel region PXA3 in the first direction DR1. The fourth unit region PU-4 includes a fourth pixel region PXA4 including 4-1, 4-2, and 4-3 sub-pixel regions PXA4-1, PXA4-2, and PXA3-3 arranged spaced apart in the second direction DR2, and a fourth transmission region TA4 spaced apart from the fourth pixel region PXA4 in the first direction DR1. The fifth unit region PU-5 includes a fifth pixel region PXA5 including 5-1, 5-2, and 5-3 sub-pixel regions PXA5-1, PXA5-2, and PXA5-3 arranged spaced apart in the second direction DR2, and a fifth transmission region TA5 spaced apart from the fifth pixel region PXA5 in the first direction DR1. The sixth unit region PU-6 includes a sixth pixel region PXA6 including 6-1, 6-2, and 6-3 sub-pixel regions PXA6-1, PXA6-2, and PXA6-3 arranged spaced apart in the second direction DR2, and a sixth transmission region TA6 spaced apart from the sixth pixel region PXA6 in the first direction DR1.

[0104] As described above, in each unit region PU, the area of the transmissive region TA is larger than the area on the plane of the pixel region PXA. In an embodiment, the area on the plane of the third transmissive region TA3 included in the third unit region PU-3 can be larger than the sum of the areas on the plane of the sub-pixel regions PXA3-1, PXA3-2, PXA3-3 included in the third unit region PU-3. The area on the plane of the fourth transmissive region TA4 included in the fourth unit region PU-4 can be larger than the sum of the areas on the plane of the sub-pixel regions PXA4-1, PXA4-2, PXA4-3 included in the fourth unit region PU-4. The area on the plane of the fifth transmissive region TA5 included in the fifth unit region PU-5 can be larger than the sum of the areas on the plane of the sub-pixel regions PXA5-1, PXA5-2, PXA5-3 included in the fifth unit region PU-5. The area on the plane of the sixth transmissive region TA6 included in the sixth unit region PU-6 can be larger than the sum of the areas on the plane of the sub-pixel regions PXA6-1, PXA6-2, PXA6-3 included in the sixth unit region PU-6.

[0105] In the display region DA of an embodiment, a part of the unit regions PU adjacent to each other in the second direction DR2 is defined as an intermediate region MA. A first intermediate region MA1 is defined between the first unit region PU-1 and the second unit region PU-2. A second intermediate region MA2 can be defined between the third unit region PU-3 and the fourth unit region PU-4. A third intermediate region MA3 can be defined between the second unit region PU-2 and the fifth unit region PU-5. A fourth intermediate region MA4 can be defined between the fourth unit region PU-4 and the sixth unit region PU-6.

[0106] At least a part of the intermediate region MA is arranged with a barrier pattern BP (refer to Figure 5b ) to be described later. The barrier pattern BP (refer to Figure 5b ) can overlap with at least a part of the intermediate region MA on the plane.

[0107] Figure 5b is a plan view that enlarges a part of a part of the configuration of the display device according to an embodiment of the present application. Figure 5b The planar arrangement shape of the bank BMP and the barrier pattern BP arranged in correspondence with a part of the display region shown in Figure 5a is shown.

[0108] Refer to Figure 5a and Figure 5bIn the bank BMP, a plurality of bank opening portions BOH corresponding to the pixel region PXA are provided. The bank opening portion BOH can include a first bank opening portion BOH1 corresponding to the 1-1th sub-pixel region PXA1-1, a second bank opening portion BOH2 corresponding to the 1-2th sub-pixel region PXA1-2, and a third bank opening portion BOH3 corresponding to the 1-3th sub-pixel region PXA1-3. Inside the bank opening portion BOH, the light control patterns CCP-R, CCP-G, CCP-B (refer to Figure 7 ).

[0109] In the bank BMP, an opening portion OPP corresponding to the transmission region TA can be defined. The opening portion OPP and the bank opening portion BOH can be a region in which the bank BMP is removed and does not overlap the bank BMP in the plan view. The opening portion OPP can extend along the second direction DR2. That is, the opening portion OPP can be provided to correspond to all of the plurality of transmission regions TA arranged along the second direction DR2 and the intermediate regions MA arranged therebetween.

[0110] The block pattern BP is arranged at least in the above-described intermediate region MA. The block pattern BP can overlap the intermediate region MA at least in the plan view. The block pattern BP can include a first block pattern BP1 arranged in the first intermediate region MA1. The block pattern BP can include a second block pattern BP2 arranged in the second intermediate region MA2, a third block pattern BP3 arranged in the third intermediate region MA3, and a fourth block pattern BP4 arranged in the fourth intermediate region MA4.

[0111] A portion of the block pattern BP can overlap the bank BMP in the plan view. The remaining portion of the block pattern BP can overlap the opening portion OPP in the plan view. The portion of the block pattern BP overlapping the bank BMP in the plan view can be a spacing portion SPP (refer to Figure 9b ). The remaining portion of the block pattern BP overlapping the opening portion OPP in the plan view can be a block portion BPP (refer to Figure 9b ). For the specific configuration of the block pattern BP, a more detailed description will be given in the description of Figure 9a and Figure 9b .

[0112] Figure 6 and Figure 7 are cross-sectional views of a display device DD according to an embodiment of the present disclosure. Figure 6 is a cross-sectional view taken along I-I' of Figure 5a . Figure 7 is a cross-sectional view taken along II-II' of Figure 5a . In Figure 6 and Figure 7In the present embodiment, only a part of the configuration of the display device DD is illustrated, and a window WD (refer to FIG. 1), etc. is omitted. Figure 2

[0113] Referring to Figure 6 , the display device DD includes a display panel DP and an optical layer OSL arranged on the display panel DP.

[0114] The display panel DP can include a base substrate BS and a circuit element layer DP-CL, a display element layer DP-LED, and a sealing layer TFE arranged on the base substrate BS.

[0115] The base substrate BS can include a synthetic resin layer. The synthetic resin layer can include at least one of an acrylic resin, a methacrylic resin, a polyisoprene resin, an ethylene resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyamide resin, and a perylene resin. In addition, the base substrate BS can include a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, etc.

[0116] The circuit element layer DP-CL includes at least a plurality of insulating layers and circuit elements. The insulating layer, the semiconductor layer, and the conductive layer are formed by a process such as coating, deposition, etc. Then, the insulating layer, the semiconductor layer, and the conductive layer can be selectively patterned by a photolithography process and an etching process. The semiconductor pattern, the conductive pattern, the signal line, etc. are formed by these processes. The patterns arranged on the same layer are formed by the same process.

[0117] The circuit element layer DP-CL includes a driving circuit or a signal line constituting a pixel. The display element layer DP-LED can include a light emitting element LED included in a pixel and a pixel definition film PDL.

[0118] The circuit element layer DP-CL can include a first insulating layer 10, a second insulating layer 20, a third insulating layer 30, a fourth insulating layer 40, and a fifth insulating layer 50, and a conductive pattern. According to an embodiment, the first to fourth insulating layers 10 to 40 can be inorganic layers including a single layer or multiple layers, and the fifth insulating layer 50 can be an organic layer.

[0119] A black matrix pattern BML can be arranged on the base substrate BS. According to an embodiment, the black matrix pattern BML can be connected with a semiconductor pattern of an overlapping transistor (for example, a first transistor T1), and can receive a signal applied to the semiconductor pattern, thereby forming a synchronous (Sync) structure under the semiconductor pattern. According to an embodiment, the black matrix pattern BML can include metal layers stacked in order. The first layer can include titanium, and the second layer can include copper.

[0120] ​The first insulating layer 10 can be disposed on the base substrate BS and cover the light-blocking pattern BML. According to an embodiment, the first insulating layer 10 can include inorganic layers stacked in order. The first layer can include silicon nitride, and the second layer can include silicon oxide.

[0121] The semiconductor pattern of the first transistor T1 can be disposed on the first insulating layer 10. The semiconductor pattern can include a source region S1, a channel region (or an active region) A1, and a drain region D1. According to an embodiment, the semiconductor pattern can include indium gallium zinc oxide (IGZO).

[0122] The second insulating layer 20 can be disposed between the semiconductor pattern and the gate G1. The second insulating layer 20 can be disposed on the first insulating layer 10 and cover the semiconductor pattern. Without being limited thereto, the second insulating layer 20 can expose regions of the semiconductor pattern other than the active region A1. The second insulating layer 20 can be a layer patterned as a mask of the gate G1. According to an embodiment, the second insulating layer 20 can include silicon oxide.

[0123] The gate G1 can be disposed on the second insulating layer 20. According to an embodiment, the gate G1 can include metal layers stacked in order. The first layer can include titanium, and the second layer can include copper.

[0124] The third insulating layer 30 can be disposed on the second insulating layer 20 and can cover the gate G1. Without being limited thereto, the third insulating layer 30 can also cover the semiconductor pattern exposed by the gate G1. According to an embodiment, the third insulating layer 30 can include silicon oxynitride.

[0125] The first connection electrode CNE1 can be disposed on the third insulating layer 30. The first connection electrode CNE1 can be connected with the source region S1 through a contact hole defined in the second insulating layer 20 and the third insulating layer 30. According to an embodiment, the first connection electrode CNE1 can include metal layers stacked in order. The first layer can include titanium, the second layer can include copper, and the third layer can include indium tin oxide (ITO).

[0126] The fourth insulating layer 40 can be disposed on the third insulating layer 30 and can cover the first connection electrode CNE1. According to an embodiment, the fourth insulating layer 40 can include silicon nitride. A layer including silicon nitride has a high density of film quality, resulting in a decrease in transmittance, as compared with a layer including silicon oxide and / or silicon oxynitride. Therefore, in order to improve transmittance in a transparent display panel DP as in the present application, it is necessary to remove silicon nitride in a transmissive region TA.

[0127] The second connection electrode CNE2 can be disposed on the fourth insulating layer 40. The second connection electrode CNE2 can be connected with the first connection electrode CNE1 through a contact hole defined in the fourth insulating layer 40. According to an embodiment, the second connection electrode CNE2 can include the same substance as the first connection electrode CNE1. In the display panel DP according to an embodiment, the second connection electrode CNE2 can be omitted, and is not limited to any one embodiment.

[0128] The fifth insulating layer 50 can be disposed on the fourth insulating layer 40, and can cover the second connection electrode CNE2. According to an embodiment, the fifth insulating layer 50 can include an organic substance. For example, the fifth insulating layer 50 can include photosensitive polyimide (PSPI).

[0129] The display element layer DP-LED can be disposed on the fifth insulating layer 50. The display element layer DP-LED can include a light emitting element LED and a pixel definition film PDL. The light emitting element LED can include a first electrode AE, a functional layer FNL, and a second electrode CE. The functional layer FNL of the light emitting element LED according to an embodiment can include at least one light emitting layer.

[0130] The pixel definition film PDL can be disposed on the fifth insulating layer 50, and can cover a portion of the first electrode AE. The pixel definition film PDL can include an organic substance. For example, the pixel definition film PDL can include photosensitive polyimide (PSPI). The pixel definition film PDL can include a light emitting opening portion PDL-OP. The light emitting opening portion PDL-OP of the pixel definition film PDL can be provided as a plurality, each of which can be defined as a light emitting region as described above. A region in which the pixel definition film PDL is disposed can be defined as a non-light emitting region. Figure 3 The pixel definition film PDL can be disposed on the fifth insulating layer 50, and can cover a portion of the first electrode AE. The pixel definition film PDL can include an organic substance. For example, the pixel definition film PDL can include photosensitive polyimide (PSPI). The pixel definition film PDL can include a light emitting opening portion PDL-OP. The light emitting opening portion PDL-OP of the pixel definition film PDL can be provided as a plurality, each of which can be defined as a light emitting region as described above. A region in which the pixel definition film PDL is disposed can be defined as a non-light emitting region.

[0131] The first electrode AE of the light emitting element LED is disposed on the fifth insulating layer 50. The light emitting opening portion PDL-OP of the pixel definition film PDL exposes at least a portion of the first electrode AE. According to an embodiment, the first electrode AE can include layers of conductive substances stacked in order. For example, the first electrode AE can include layers of conductive substances of a three-layer structure. A first layer of the first electrode AE can include indium tin oxide (ITO), a second layer can include silver (Ag), and a third layer can include indium tin oxide (ITO).

[0132] The functional layer FNL can include at least one layer of an organic substance. The functional layer FNL can include at least one light emitting layer. The light emitting layer can generate light of a specific wavelength. The light emitting layer can include an organic light emitting substance or an inorganic light emitting substance.

[0133] The functional layer FNL can further include a hole control layer and an electron control layer. At least one organic substance layer included in the functional layer FNL can be collectively disposed in the light emitting area and the non-light emitting area. At least one organic substance layer included in the functional layer FNL can be collectively disposed in the plurality of pixel areas. In the present specification, a layer formed as a common layer can be disposed in the display area DA (refer to Figure 3 ) and the non-display area NDA (refer to Figure 3 ) entirely. A layer formed as a common layer can be defined as a "common layer".

[0134] The encapsulation layer TFE can be disposed on the display element layer DP-LED and protect the light emitting element LED. The encapsulation layer TFE can include an encapsulation inorganic film T-IOL1, T-IOL2 and an encapsulation organic film T-OL disposed between the encapsulation inorganic films T-IOL1, T-IOL2. The encapsulation inorganic films T-IOL1, T-IOL2 can protect the light emitting element LED from moisture and oxygen, and the encapsulation organic film T-OL can protect the light emitting element LED from foreign substances such as dust particles.

[0135] The encapsulation inorganic films T-IOL1, T-IOL2 can prevent external moisture or oxygen from permeating to the functional layer FNL of the light emitting element LED. The encapsulation inorganic films T-IOL1, T-IOL2 can include a compound of silicon nitride, silicon oxide, or a combination thereof. The encapsulation inorganic films T-IOL1, T-IOL2 can be formed by a deposition process. The encapsulation inorganic films T-IOL1, T-IOL2 can include a first encapsulation inorganic film T-IOL1 disposed at a lower portion of the encapsulation organic film T-OL and a second encapsulation inorganic film T-IOL2 disposed at an upper portion of the encapsulation organic film T-OL.

[0136] The encapsulation organic film T-OL can provide a flat surface on the first encapsulation inorganic film T-IOL1. The encapsulation organic film T-OL can cover a wrinkle formed on the upper surface of the first encapsulation inorganic film T-IOL1 or a particle or the like existing on the inorganic layer to block the influence of the surface state of the upper surface of the first encapsulation inorganic film T-IOL1 on the formation of a structure formed on the encapsulation organic film T-OL. The encapsulation organic film T-OL can include an organic substance.

[0137] The optical layer OSL can convert the color of light provided from the light emitting element LED. The optical layer OSL can include a light control pattern and a structure for increasing the conversion efficiency of light.

[0138] The optical layer OSL can be disposed on the display panel DP. The optical layer OSL can include a light control layer CCL, a low-refraction layer LR, a color filter layer CFL, and a base layer BL. In the present specification, the optical layer OSL can be referred to as an upper panel.

[0139] The light control layer CCL can be disposed on the display element layer DP-LED including the light emitting element LED. The light control layer CCL can include the second barrier layer CAP2, the bank BMP, the first light control pattern CCP-R, and the first barrier layer CAP1.

[0140] The bank BMP can include a base resin and an additive. The base resin can be constituted with a variety of resin compositions that can be referred to as a binder. The additive can include a coupling agent and / or a photoinitiator. The additive can also include a dispersant.

[0141] To block light, the bank BMP can include a black coloring agent. The bank BMP can include a black dye and a black pigment mixed in the base resin. In an embodiment, the black coloring agent can include carbon black, or can include a metal such as chromium or an oxide thereof.

[0142] The bank BMP can include a first bank opening portion BOH1 corresponding to the light emission opening portion PDL-OP. In a plan view, the first bank opening portion BOH1 can overlap the light emission opening portion PDL-OP, and can have an area greater than the light emission opening portion PDL-OP. That is, the first bank opening portion BOH1 can have an area greater than the first light emission area EA1 defined by the light emission opening portion PDL-OP. In addition, in the present specification, "corresponding" means that two constitute an overlap when viewed in the thickness direction of the display panel DP (i.e., the third direction DR3), and is not limited to the same area.

[0143] The first light control pattern CCP-R can be disposed inside the first bank opening portion BOH1. The first light control pattern CCP-R can convert an optical property of the source light.

[0144] The first light control pattern CCP-R can include a quantum dot for converting an optical property of the source light. The first light control pattern CCP-R can include a first quantum dot that converts the source light into light of a different wavelength. In the first light control pattern CCP-R overlapping the first sub-pixel area PXA-1 (the 1-1 sub-pixel area PXA1-1), the first quantum dot can convert the source light into red light.

[0145] In the present specification, "quantum dot" refers to a crystal of a semiconductor compound. The quantum dot can emit light of a variety of light emission wavelengths according to the size of the crystal. The quantum dot can also emit light of a variety of light emission wavelengths by controlling the element ratio within the quantum dot compound.

[0146] For example, the diameter of the quantum dot can be about 1 nm to 10 nm.

[0147] The quantum dots can be synthesized using a wet-chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, or the like.

[0148] The wet-chemical process is a method of crystalline growth of quantum dot particles after mixing of an organic solvent and a precursor substance. When the crystalline growth, the organic solvent can naturally act as a dispersant located on the surface of the quantum dot crystalline, and can adjust the growth of the crystalline. Accordingly, the wet-chemical process is easier than a vapor deposition method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and can control the growth of quantum dot particles through a low-cost process.

[0149] The core of the quantum dot can be selected from a group consisting of a II-VI compound, a III-V compound, a III-VI compound, a I-III-VI compound, a IV-VI compound, a IV element, a IV compound, and combinations thereof.

[0150] The II-VI compound can be selected from the group consisting of a binary compound selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; a ternary compound selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and a quaternary compound selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. In addition, the II-VI semiconductor compound can further include a group I metal and / or a group IV element. The I-II-VI compound can be selected from CuSnS or CuZnS, the II-IV-VI compound can be selected from ZnSnS, and the like. The I-II-IV-VI compound can be selected from a quaternary compound selected from the group consisting of Cu2ZnSnS2, Cu2ZnSnS4, Cu2ZnSnSe4, Ag2ZnSnS2, and mixtures thereof.

[0151] The group III-VI compound can include a two-element compound such as In2S3, In2Se3, etc., a three-element compound such as InGaS3, InGaSe3, etc., or any combination thereof.

[0152] The group I-III-VI compound can be selected from a three-element compound selected from the group consisting of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, and mixtures thereof, or a four-element compound such as AgInGaS2, CuInGaS2, etc.

[0153] The group III-V compound can be selected from the group consisting of: a two-element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; a three-element compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and a four-element compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Additionally, the group III-V compound can also include a group II metal. For example, as a group III-II-V compound, InZnP, etc., can be selected.

[0154] The group IV-VI compound can be selected from the group consisting of: a two-element compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a three-element compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a four-element compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.

[0155] Examples of the Group II-IV-V semiconductor compound can be a three-element compound selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, CdGeP2, and mixtures thereof.

[0156] As the Group IV element, an element selected from the group consisting of Si, Ge, and mixtures thereof can be used. As the Group IV compound, a two-element compound selected from the group consisting of SiC, SiGe, and mixtures thereof can be used.

[0157] Each element included in the multi-element compound such as the two-element compound, the three-element compound, and the four-element compound can exist in a uniform concentration or a non-uniform concentration within the particle. That is, the chemical formula refers to the type of the element included in the compound, and the element ratio in the compound can be different. For example, AgInGaS2may refer to AgIn x Ga 1-x S2(x is a real number between 0 and 1).

[0158] At this time, the two-element compound, the three-element compound, or the four-element compound can exist in a uniform concentration within the particle, or can exist in a state where the concentration is partially different within the same particle. In addition, a core / shell structure in which one quantum dot surrounds another quantum dot can also be present. In the core / shell structure, a concentration gradient in which the concentration of the element present in the shell gradually decreases toward the core can be present.

[0159] In several embodiments, the quantum dot can have a core-shell structure including a core including the nanocrystal described above and a shell surrounding the core. The shell of the quantum dot can perform the role of a protective layer for preventing chemical denaturation of the core while maintaining the semiconductor property and / or the role of a charging layer for imparting electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. As examples of the shell of the quantum dot, a metal or non-metal oxide, a semiconductor compound, or a combination thereof, etc. can be cited.

[0160] For example, the metal or non-metal oxide can exemplarily show a two-element compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a three-element compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present application is not limited thereto.

[0161] Further, the semiconductor compound can exemplarily show CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present application is not limited thereto.

[0162] The quantum dot can have a full width of half maximum (FWHM) of a light emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and can improve color purity or color reproducibility within the range. Further, light emitted by such a quantum dot is emitted in all directions, so that light viewing angle can be improved.

[0163] Further, the morphology of the quantum dot is a morphology commonly used in the art and is not particularly limited, and more specifically, a spherical, pyramidal, multi-arm or cubic nanoparticle, nanotube, nanowire, nanofiber, nanosheet particle, etc. can be used.

[0164] The quantum dot can adjust the energy band gap by adjusting the size of the quantum dot or the element ratio within the quantum dot compound, and thus can obtain light of a plurality of wavelength bands in the quantum dot light emitting layer. Therefore, by using the quantum dot as described above (using quantum dots of different sizes from each other or using quantum dots having different element ratios within the quantum dot compound), a light emitting element that emits light of various wavelengths can be implemented. Specifically, the adjustment of the size of the quantum dot or the element ratio within the quantum dot compound can be selected to emit red light, green light, and / or blue light. Further, the quantum dot can be configured to combine light of a plurality of colors to emit white light.

[0165] In an embodiment, the quantum dots included in the first light control pattern CCP-R overlapping with the first sub-pixel area PXA-1 can have a red light emission color. The smaller the particle size of the quantum dot, the shorter the wavelength region of light that can be emitted. For example, in quantum dots having the same core, the particle size of the quantum dot emitting green light can be smaller than the particle size of the quantum dot emitting red light. Further, in quantum dots having the same core, the particle size of the quantum dot emitting blue light can be smaller than the particle size of the quantum dot emitting green light. However, the embodiment is not limited thereto, and in quantum dots having the same core, the particle size can also be adjusted according to the formation material of the shell and the shell thickness, etc.

[0166] In addition, in the case where the quantum dot has a plurality of light emission colors such as blue, red, green, etc., the materials of the cores of the quantum dots having different light emission colors can be different from each other.

[0167] The first light control pattern CCP-R can further include a scattering body. The first light control pattern CCP-R can include first quantum dots that convert blue light into red light and a scattering body that scatters light.

[0168] The scattering body can be an inorganic particle. For example, the scattering body can include at least one of TiO2, ZnO, Al2O3, SiO2, and hollow silica. The scattering body can include one of TiO2, ZnO, Al2O3, SiO2, and hollow silica, or can be a mixture of two or more selected from TiO2, ZnO, Al2O3, SiO2, and hollow silica.

[0169] The first light control pattern CCP-R can include a base resin in which the first quantum dots and the scattering body are dispersed. The base resin, as a medium in which the first quantum dots and the scattering body are dispersed, can be configured using various resin compositions that can be generally referred to as an adhesive. For example, the base resin can be an acrylic resin, a urethane resin, a silicon resin, an epoxy resin, or the like. The base resin can be a transparent resin.

[0170] In the present embodiment, the first light control pattern CCP-R can be formed through an inkjet process. A liquid composition can be provided in the bank opening portion BOH1. The composition that is polymerized through a thermal curing process or a photo-curing process is reduced in volume after curing.

[0171] The light control layer CCL can include a first barrier layer CAP1 disposed on a surface of the first light control pattern CCP-R. The first barrier layer CAP1 can function to prevent the permeation of moisture and / or oxygen (hereinafter, referred to as "moisture / oxygen") and to improve the optical characteristics of the optical stack OSL by adjusting the refractive index. The first barrier layer CAP1 can be disposed on an upper surface or a lower surface of the first light control pattern CCP-R to block the first light control pattern CCP-R from being exposed to moisture / oxygen, and in particular, can block the quantum dots included in the first light control pattern CCP-R from being exposed to moisture / oxygen. The first barrier layer CAP1 can also protect the first light control pattern CCP-R from external impact.

[0172] In one embodiment, the first barrier layer CAP1 can be arranged to be spaced apart from the display element layer DP-LED with the first light control pattern CCP-R interposed therebetween. That is, the first barrier layer CAP1 can be arranged on an upper surface of the first light control pattern CCP-R. In one embodiment, the light control layer CCL can include a second barrier layer CAP2 arranged between the first light control pattern CCP-R and the display element layer DP-LED. The first barrier layer CAP1 can cover an upper surface of the first light control pattern CCP-R adjacent to the low-refractive layer LR, and the second barrier layer CAP2 can cover a lower surface of the first light control pattern CCP-R adjacent to the display element layer DP-LED. Also, in the present specification, an "upper surface" can be a surface located at an upper portion with reference to the third direction DR3, and a "lower surface" can be a surface located at a lower portion with reference to the third direction DR3.

[0173] Further, the first barrier layer CAP1 and the second barrier layer CAP2 can cover not only the first light control pattern CCP-R but also a surface of the bank BMP.

[0174] The first barrier layer CAP1 can cover a surface of the bank BMP and the first light control pattern CCP-R adjacent to the low-refractive layer LR. The first barrier layer CAP1 can be arranged directly on a lower portion of the low-refractive layer LR. The second barrier layer CAP2 can be arranged directly on an upper portion of the filling layer FML. The light control layer CCL can be arranged on the display element layer DP-LED and the encapsulation layer TFE with the second barrier layer CAP2 interposed therebetween.

[0175] The first barrier layer CAP1 and the second barrier layer CAP2 can be configured to include inorganic substances. In the display panel DP of one embodiment, the first barrier layer CAP1 can include silicon oxynitride (SiON). The first barrier layer CAP1 and the second barrier layer CAP2 can each include silicon oxynitride. However, the first barrier layer CAP1 and the second barrier layer CAP2 can each include silicon oxide (SiO x ) or silicon nitride (SiN x ), without being limited thereto. In one embodiment, the first barrier layer CAP1 arranged on an upper portion of the first light control pattern CCP-R can include silicon oxynitride, and the second barrier layer CAP2 arranged on a lower portion of the first light control pattern CCP-R can include silicon oxide.

[0176] A color filter layer CFL can be arranged on the light control layer CCL. The color filter layer CFL includes at least one color filter. The color filter transmits light of a certain wavelength range and blocks light outside the corresponding wavelength range. A first color filter CF1 corresponding to the first subpixel region PXA-1 can transmit red light and block green light and blue light.

[0177] The first color filter CF1 includes a base resin and a dye and / or a pigment dispersed in the base resin. The base resin, which serves as a medium in which the dye and / or the pigment is dispersed, can be formed using a variety of resin compositions that can be generally referred to as binders.

[0178] The first color filter CF1 can have a uniform thickness within the first sub-pixel region PXA-1. Light converted from source light that is blue light into red light by the first light control pattern CCP-R can be provided to the outside with a uniform brightness within the first sub-pixel region PXA-1.

[0179] The optical layer OSL can include a low-refraction layer LR arranged between the light control layer CCL and the color filter layer CFL. The low-refraction layer LR can be arranged directly on the first barrier layer CAP1, and the color filter layer CFL can be arranged directly on the low-refraction layer LR. A lower surface of the low-refraction layer LR can be in contact with an upper surface of the first barrier layer CAP1, and an upper surface of the low-refraction layer LR can be in contact with lower surfaces of the color filters CF1, CF2, CF3 of the color filter layer CFL.

[0180] The low-refraction layer LR can improve light extraction efficiency arranged between the light control layer CCL and the color filter layer CFL, or can function as an optical functional layer that prevents reflection light from being incident on the light control layer CCL, and the like. The low-refraction layer LR can be a layer having a small refractive index compared to adjacent layers.

[0181] In an embodiment, the optical layer OSL can further include a base layer BL arranged on the color filter layer CFL. The base layer BL can be a member that provides a reference surface on which the color filter layer CFL, the low-refraction layer LR, and the light control layer CCL, and the like are arranged. The base layer BL can be a glass substrate, a metal substrate, a plastic substrate, and the like. However, embodiments are not limited thereto, and the base layer BL can be an inorganic layer, an organic layer, or a composite material layer. Further, unlike as illustrated, in an embodiment, the base layer BL can be omitted.

[0182] Although not illustrated, an anti-reflection layer can be arranged on the base layer BL. The anti-reflection layer can be a layer that reduces the reflectance of external light incident from the outside. The anti-reflection layer can be a layer that selectively transmits light emitted from the display panel DP. In an embodiment, the anti-reflection layer can be a single layer including a dye and / or a pigment dispersed in a base resin. The anti-reflection layer can be provided as a continuous one layer that overlaps the entire pixel region PXA (refer to Figure 5a ) as a whole.

[0183] The anti-reflection layer can not include a polarizing layer. By doing so, light that passes through the anti-reflection layer and is incident toward the display element layer DP-LED side can be non-polarized light. The display element layer DP-LED can receive non-polarized light from the upper portion of the anti-reflection layer.

[0184] The display device DD of one embodiment can further include a filling layer FML arranged between the optical layer OSL and the display panel DP. In one embodiment, the filling layer FML can fill between the optical layer OSL and the display panel DP.

[0185] The filling layer FML can function as a buffer between the optical layer OSL and the display panel DP. In one embodiment, the filling layer FML can function as an impact absorbing function or the like, and can increase the strength of the display panel DP. The filling layer FML can be formed of a filling resin including a high molecular resin. For example, the filling layer FML can be formed of a filling resin including an acrylic resin or an epoxy resin, or the like.

[0186] Referring to Figure 7 The display panel DP can include a base substrate BS and a circuit element layer DP-CL arranged on the base substrate BS. The circuit element layer DP-CL can be arranged on the base substrate BS. The circuit element layer DP-CL can include an insulating layer, a semiconductor pattern, a conductive pattern, a signal line, and the like. The insulating layer, the semiconductor layer, and the conductive layer can be formed on the base substrate BS by coating, deposition, or the like, and then the insulating layer, the semiconductor layer, and the conductive layer can be selectively patterned by a plurality of photolithography processes. Then, the semiconductor pattern, the conductive pattern, and the signal line included in the circuit element layer DP-CL can be formed. In one embodiment, the circuit element layer DP-CL can include a first transistor T1, a buffer layer, and a plurality of insulating layers.

[0187] The light emitting element LED according to one embodiment can include a first electrode AE, a second electrode CE facing the first electrode AE, and a functional layer FNL arranged between the first electrode AE and the second electrode CE. The functional layer FNL included in the light emitting element LED can include at least a light emitting layer. The light emitting layer can include an organic light emitting substance as a light emitting substance, or can include a quantum dot. The functional layer FNL can further include a hole control layer and an electron control layer. In addition, although not shown, the light emitting element LED can further include a cover layer (not shown) arranged on an upper portion of the second electrode CE.

[0188] The pixel definition film PDL can be arranged on the circuit element layer DP-CL and can cover a part of the first electrode AE. The light emitting opening portion PDL-OP is defined in the pixel definition film PDL. The light emitting opening portion PDL-OP of the pixel definition film PDL exposes at least a part of the first electrode AE. In this embodiment, the light emitting regions EA1, EA2, EA3 are defined to correspond to the partial regions of the first electrode AE exposed by the light emitting opening portion PDL-OP.

[0189] The display element layer DP-LED can include a first light emitting region EA1, a second light emitting region EA2, and a third light emitting region EA3. The first light emitting region EA1, the second light emitting region EA2, and the third light emitting region EA3 can be regions distinguished by the pixel definition film PDL. The first light emitting region EA1, the second light emitting region EA2, and the third light emitting region EA3 can correspond to the first sub-pixel region PXA-1, the second sub-pixel region PXA-2, and the third sub-pixel region PXA-3, respectively.

[0190] The light emitting regions EA1, EA2, EA3 can overlap the pixel regions PXA-1, PXA-2, PXA-3. When viewed in plan, the areas of the pixel regions PXA-1, PXA-2, PXA-3 distinguished by the color filters CF1, CF2, CF3 can be larger than the areas of the light emitting regions EA1, EA2, EA3 distinguished by the pixel definition film PDL. However, this is not limiting, and the areas of the pixel regions PXA-1, PXA-2, PXA-3 can be substantially the same as the areas of the light emitting regions EA1, EA2, EA3.

[0191] In the light emitting element LED, the first electrode AE is arranged on the circuit element layer DP-CL. The first electrode AE can be an anode or a cathode. Further, the first electrode AE can be a pixel electrode. The first electrode AE can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0192] Figure 8 is a cross-sectional view of a light emitting element according to an embodiment of the present application. Figure 8 embodied in Figure 6 and Figure 7 the configuration of the functional layer FNL in the light emitting element of an embodiment shown in Figure 8 is exemplarily shown in the light emitting element LED including a plurality of light emitting stacks ST1, ST2, ST3, ST4 arranged between the first electrode AE and the second electrode CE.

[0193] Referring to Figure 8 , the light emitting element LED of an embodiment can include the first electrode AE, the second electrode CE facing the first electrode AE, and the first light emitting stack ST1, the second light emitting stack ST2, the third light emitting stack ST3, and the fourth light emitting stack ST4 arranged between the first electrode AE and the second electrode CE. In addition, although Figure 8 is exemplarily shown in the light emitting element LED including four light emitting stacks, the number of light emitting stacks included in the light emitting element LED can be less than or greater than this.

[0194] The light emitting element LED can include a first charge generation layer CGL1, a second charge generation layer CGL2, and a third charge generation layer CGL3 disposed between the first light emitting stack ST1, the second light emitting stack ST2, the third light emitting stack ST3, and the fourth light emitting stack ST4.

[0195] If a voltage is applied to each of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3, a complexing agent can be formed by a redox reaction, thereby generating charges (electrons and holes). Thereafter, the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can provide the generated charges to the adjacent light emitting stacks ST1, ST2, ST3, and ST4, respectively. The first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can multiply the efficiency of the current generated in the adjacent light emitting stacks ST1, ST2, ST3, and ST4, and can play a role in adjusting the balance of charges between the adjacent light emitting stacks ST1, ST2, ST3, and ST4.

[0196] Each of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can include an n-type layer and a p-type layer. The first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can have a structure in which the n-type layer and the p-type layer are bonded to each other. However, it is not limited thereto, and the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can include only one of the n-type layer and the p-type layer. The n-type layer can be a charge generation layer that provides electrons to an adjacent stack. The n-type layer can be a layer in which an n-dopant is doped in a base substance. The p-type layer can be a charge generation layer that provides holes to an adjacent stack.

[0197] In an embodiment, the thickness of each of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can be 1 angstrom (Å) ) or more and 150 angstroms (Å) The concentration of the n-dopant doped in the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can be 0.1% or more and 3% or less, and specifically, can be 1% or less. In the case where the concentration is less than 0.1%, it can be almost impossible to generate the effect of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 that adjust the balance of charges. In the case where the concentration is greater than 3%, it can reduce the light efficiency of the light emitting element LED.

[0198] Each of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 can include a charge generation compound composed of an arylamine-based organic compound, a metal, an oxide of the metal, a carbide, a fluoride of the metal, or a mixture thereof. For example, the arylamine-based organic compound can include α-NPD, 2-TNATA, TDATA, MTDATA, sprio-TAD, or sprio-NPB. The metal can include cesium (Cs), molybdenum (Mo), vanadium (V), titanium (Ti), tungsten (W), barium (Ba), or lithium (Li). The oxide of the metal, the carbide, and the fluoride of the metal can include Re2O7, MoO3, V2O5, WO3, TiO2, Cs2CO3, BaF, LiF, or CsF. However, the material of the first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 is not limited to the examples described above.

[0199] Each of the first light emitting stack ST1, the second light emitting stack ST2, the third light emitting stack ST3, and the fourth light emitting stack ST4 can include a light emitting layer BEML1, BEML2, BEML13, GEML. The first light emitting stack ST1 can include a first light emitting layer BEML1, the second light emitting stack ST2 can include a second light emitting layer BEML2, the third light emitting stack ST3 can include a third light emitting layer BEML3, and the fourth light emitting stack ST4 can include a fourth light emitting layer GEML. Some of the light emitting layers BEML1, BEML2, BEML13, GEML included in the first light emitting stack ST1, the second light emitting stack ST2, the third light emitting stack ST3, and the fourth light emitting stack ST4 can emit substantially the same color light, and others can emit different color light from each other.

[0200] In an embodiment, the first light emitting layer BEML1, the second light emitting layer BEML2, and the third light emitting layer BEML3 of the first light emitting stack ST1, the second light emitting stack ST2, and the third light emitting stack ST3 can emit substantially the same first color light. For example, the first color light can be blue light as the source light described above. The wavelength range of the light emitted by the first light emitting layer BEML1, the second light emitting layer BEML2, and the third light emitting layer BEML3 can be about 420 nm or more and 480 nm or less.

[0201] The fourth light emitting layer GEML of the fourth light emitting stack ST4 can emit second color light different from the first color light. For example, the second color light can be green light. The wavelength range of the light emitted by the fourth light emitting layer GEML can be about 520 nm or more and 600 nm or less.

[0202] The light emitting element LED can emit light in a direction from the first electrode AE toward the second electrode CE. In the light emitting element LED of an embodiment, each of the plurality of light emitting stacks ST1, ST2, ST3, ST4 can include a hole transport region HTR1, HTR2, HTR3, HTR4 and an electron transport region ETR1, ETR2, ETR3, ETR4. The hole transport region HTR1, HTR2, HTR3, HTR4 can transport holes supplied from the first electrode AE or the charge generation layer CGL1, CGL2, CGL3 to the light emitting layer BEML1, BEML2, BEML13, GEML. The electron transport region ETR1, ETR2, ETR3, ETR4 can transport electrons supplied from the second electrode CE or the charge generation layer CGL1, CGL2, CGL3 to the light emitting layer BEML1, BEML2, BEML13, GEML.

[0203] In the light emitting element LED of an embodiment, a structure is exemplarily shown in which, with reference to a direction in which light is emitted (i.e., the third direction DR3), the hole transport region HTR1, HTR2, HTR3, HTR4 is disposed at a lower portion of the light emitting layer BEML1, BEML2, BEML3, GEML included in the plurality of stacks ST1, ST2, ST3, ST4, and the electron transport region ETR1, ETR2, ETR3, ETR4 is disposed at an upper portion of the light emitting layer BEML1, BEML2, BEML3, GEML included in the plurality of stacks ST1, ST2, ST3, ST4. That is, the light emitting element LED of an embodiment can have a forward element structure. However, it is not limited thereto, and can also have an inverted element structure in which, with reference to a direction in which light is emitted, the electron transport region ETR1, ETR2, ETR3, ETR4 is disposed at a lower portion of the light emitting layer BEML1, BEML2, BEML3, GEML included in the plurality of stacks ST1, ST2, ST3, ST4, and the hole transport region HTR1, HTR2, HTR3, HTR4 is disposed at an upper portion of the light emitting layer BEML1, BEML2, BEML3, GEML included in the plurality of stacks ST1, ST2, ST3, ST4.

[0204] Each of the hole transport regions HTR1, HTR2, HTR3, HTR4 can include a hole injection layer HIL1, HIL2, HIL3, HIL4 and a hole transport layer HTL1, HTL2, HTL3, HTL4 disposed on the hole injection layer HIL1, HIL2, HIL3, HIL4. The hole transport layer HTL1, HTL2, HTL3, HTL4 can be in contact with a lower surface of the light emitting layer BEML1, BEML2, BEML3, GEML. However, it is not limited thereto, and the hole transport region HTR1, HTR2, HTR3, HTR4 can further include a hole-side additional layer disposed on the hole transport layer HTL1, HTL2, HTL3, HTL4. The hole-side additional layer can include at least one of a hole buffer layer, a light emitting auxiliary layer, and an electron blocking layer. The hole buffer layer can be a layer that increases light emitting efficiency by compensating for a resonance distance according to a wavelength of light emitted from the light emitting layer BEML1, BEML2, BEML13, GEML. The electron blocking layer can be a layer that functions to prevent electron injection from the electron transport region to the hole transport region.

[0205] The electron transport region ETR1, ETR2, ETR3, ETR4 can include an electron transport layer. The electron transport region ETR1, ETR2, ETR3, ETR4 can further include an electron injection layer disposed on the electron transport layer. For example, the fourth electron transport region ETR4 included in the fourth light emitting stack ST4 can further include a fourth electron injection layer EIL4 disposed on a fourth electron transport layer ETL4. The electron transport region ETR1, ETR2, ETR3, ETR4 can further include an electron-side additional layer disposed between the electron transport layer and the light emitting layer BEML1, BEML2, BEML13, GEML. The electron-side additional layer can include at least one of an electron buffer layer and a hole blocking layer.

[0206] In an LED light-emitting element according to one embodiment, the first electrode AE ​​can be a reflective electrode. For example, the first electrode AE ​​can comprise highly reflective Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, W, In, Zn, Sn, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg). Alternatively, the first electrode AE ​​can be a multilayer structure comprising a reflective film formed using the aforementioned substances and a transparent conductive film formed using indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc. For example, the first electrode AE ​​can have a bilayer structure of ITO / Ag and a trilayer structure of ITO / Ag / ITO, but is not limited thereto. Furthermore, the embodiments are not limited thereto. The first electrode AE ​​may comprise the aforementioned metallic material, a combination of two or more metallic materials selected from the aforementioned metallic materials, or an oxide of the aforementioned metallic material, etc. The thickness of the first electrode AE ​​may be from about 70 nm to about 1000 nm. For example, the thickness of the first electrode AE ​​may be from about 100 nm to about 300 nm.

[0207] In an LED light-emitting element according to one embodiment, each of the hole transport regions HTR1, HTR2, HTR3, and HTR4 may have a multilayer structure consisting of a single layer formed using a single material, a single layer formed using multiple different materials, or multiple layers formed using multiple different materials.

[0208] Each of the hole transport regions HTR1, HTR2, HTR3, and HTR4 can be formed using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI).

[0209] Each of the hole transport regions HTR1, HTR2, HTR3, and HTR4 may contain phthalocyanine compounds such as copper phthalocyanine, N... 1 N 1' -([1,1'-biphenyl]-4,4'-diyl)bis(N) 1 -Phenyl-N 4 N 4- bis(2-methylphenyl)phenyl-1,4-diamine) (DNTPD: N1,N1'-([1,1'-biphenyl]-4,4'- diyl)bis(N1-phenyl-N4,N4-di-m-tolylbenzene-1,4-diamine)), 4,4',4"-[tris(3- methylphenyl)phenylamino]triphenylamine (m-MTDATA: 4,4',4"-[tris(3- methylphenyl)phenylamino], 4,4',4"-Tris(N,N-diphenylamino)triphenylamine (TDATA: 4,4'4"-Tris(N,N-diphenylamino)triphenylamine), 4,4',4"-tris[N(2- naphthyl)-N-phenylamino]-triphenylamine (2-TNATA: 4,4',4"-tris[N(2- naphthyl)-N-phenylamino]-triphenylamine), Poly(3,4-ethylenedioxythiophene) / Poly(4- styrenesulfonate) (PEDOT / PSS: Poly(3,4-ethylenedioxythiophene) / Poly(4- styrenesulfonate)), Polyaniline / Dodecylbenzenesulfonic acid (PANI / DBSA: Polyaniline / Dodecylbenzenesulfonic acid), Polyaniline / Camphor sulfonic acid (PANI / CSA: Polyaniline / Camphor sulfonic acid), Polyaniline / Poly(4-styrenesulfonate) (PANI / PSS: Polyaniline / Poly(4-styrenesulfonate), N,N'-di(naphthalene-l-yl)-N,N'-diphenyl- benzidine (NPB: N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), Polyether ketone containing triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyl iodonium [Tetrakis(pentafluorophenyl)borate] (4-Isopropyl-4'-methyldiphenyl iodonium [Tetrakis(pentafluorophenyl)borate], dipyrazino[2,3-f: 2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN: dipyrazino[2,3-f: 2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile), and the like.

[0210] Each of the hole transport regions HTR1, HTR2, HTR3, HTR4 can also contain N-phenylcarbazole, carbazole derivatives such as polyvinylcarbazole, fluorene derivatives, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD), triphenylamine derivatives such as 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine (NPB), 4,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine] (TAPC), 4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl (HMTPD), 1,3-Bis(N-carbazolyl)benzene (mCP), and the like.

[0211] Further, each of the hole transport regions HTR1, HTR2, HTR3, HTR4 can contain 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi), 9-phenyl-9H-3,9'-bicarbazole (CCP), or 1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene (mDCP).

[0212] The hole transport region HTR1, HTR2, HTR3, HTR4 can include the above-mentioned compound of the hole transport region in at least one of the hole injection layer HIL1, HIL2, HIL3, HIL4, the hole transport layer HTL1, HTL2, HTL3, HTL4, and the hole-side additional layer.

[0213] The thickness of each of the hole transport regions HTR1, HTR2, HTR3, HTR4 can be about 10 nm to about 1000 nm, for example, can be about 10 nm to about 500 nm. For example, the thickness of each of the hole injection layers HIL1, HIL2, HIL3, HIL4 can be about 5 nm to about 100 nm. The thickness of each of the hole transport layers HTL1, HTL2, HTL3, HTL4 can be about 5 nm to about 100 nm. In the case where the hole transport region HTR1, HTR2, HTR3, HTR4 includes the hole-side additional layer, the thickness of the hole-side additional layer can be about 1 nm to about 100 nm. In the case where the thickness of the hole transport region HTR1, HTR2, HTR3, HTR4 and each layer included therein satisfies the above-mentioned range, a satisfactory degree of hole transport characteristics can be obtained without actual driving voltage rise.

[0214] Each of the hole transport regions HTR1, HTR2, HTR3, HTR4 can further include a charge generating substance in order to improve conductivity in addition to the above-mentioned substance. The charge generating substance can be uniformly or non-uniformly dispersed within the hole transport region HTR1, HTR2, HTR3, HTR4. For example, the charge generating substance can be a p-type dopant. The p-type dopant can include at least one of a halogenated metal compound, a quinone derivative, a metal oxide, and a cyano-containing compound, but is not limited thereto. For example, the p-type dopant can be a halogenated metal compound such as CuI and RbI, a quinone derivative such as tetracyanoquinodimethane (TCNQ) and 2,3,5,6-tetrafluoro-7,7',8,8-tetracyanoquinodimethane (F4-TCNQ), a metal oxide such as tungsten oxide and molybdenum oxide, and the like, but embodiments are not limited thereto.

[0215] Each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can include a host material and a dopant material. Each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can include a substance including a carbazole derivative moiety or an amine derivative moiety as a hole-transporting host material. Each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can include a substance including a nitrogen-containing aromatic ring structure such as a pyridine derivative moiety, a pyridazine derivative moiety, a pyrimidine derivative moiety, a pyrazine derivative moiety, a triazine derivative moiety, or the like, as an electron-transporting host material.

[0216] Each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can also contain an anthracene derivative, a pyrene derivative, a fluoranthene derivative, a chrysene derivative, a dibenzoanthracene derivative, or a triphenylene derivative, or the like as a host material. In addition, each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can also contain a general material known in the art as a host substance. For example, each of the blue light-emitting layers BEML1, BEML2, BEML3 and the green light-emitting layer GEML can contain at least one of bis[2-(diphenylphosphino)phenyl]ether oxide (DPEPO), 4,4'-Bis(carbazol-9-yl)biphenyl (CBP), 1,3-Bis(carbazol-9-yl)benzene (mCP), 2,8-Bis(diphenylphosphoryl)dibenzo[b,d]furan (PPF), 4,4',4''-Tris(carbazol-9-yl)-triphenylamine (TCTA), and 1,3,5-tris(1-phenyl-1H-benzo[d]imidazole-2-yl)benzene (TPBi) as a host substance.However, not limited to this, for example, tris(8-hydroxyquinolino)aluminum (Alq3), poly(N-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (AND), 2-tert-butyl-9,10-di(naphth-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), 2-Methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), Hexaphenylcyclotriphosphazene (CP1), 1,4-Bis(triphenylsilyl)benzene (UGH2), Hexaphenylcyclotrisiloxane (DPSiO3), Octaphenylcyclotetrasiloxane (DPSiO4), and the like can be used as the host material.

[0217] In an embodiment, the blue light-emitting layer BEML1, BEML2, BEML3 can include styryl derivatives (e.g., 1,4-bis[2-(3-N-ethylcarbazoryl)vinyl]benzene (BCzVB), 4-(di-p-tolylamino)-4'-[(di-p-tolylamino)styryl]stilbene (DPAVB), N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalen-2-yl)vinyl)phenyl)-N-phenylbenzenamine (N-BDAVBi), 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi), perylene and derivatives thereof (e.g., 2, 5, 8, 11-Tetra-t-butylperylene (TBP)), pyrene and derivatives thereof (e.g., 1, 1-dipyrene, 1, 4-dipyrenylbenzene, 1, 4-Bis(N, N-Diphenylamino)pyrene), etc. as well-known fluorescent dopant materials.

[0218] The green light-emitting layer GEML can include a known phosphorescent dopant material. For example, the phosphorescent dopant can use a metal complex including iridium (Ir), platinum (Pt), osmium (Os), gold (Au), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), or thulium (Tm). Specifically, bis(4,6-difluorophenylpyridinato-N,C2') picolinate iridium(III) (FIrpic), bis(2,4-difluorophenylpyridinato)-tetrakis(1-pyrazolyl)borate iridium(III) (FIr6), or platinum octaethyl porphyrin (PtOEP) can be used as the phosphorescent dopant.

[0219] Each of the electron transport regions ETR1, ETR2, ETR3, and ETR4 can have a single layer formed of a single material, a single layer formed of a plurality of materials different from each other, or a multi-layer structure of a plurality of layers formed of a plurality of materials different from each other. For example, at least a portion of the electron transport regions ETR1, ETR2, ETR3, and ETR4 can include an electron transport layer ETL4 and an electron injection layer EIL4.

[0220] Each of the electron transport regions ETR1, ETR2, ETR3, and ETR4 can be formed using a variety of methods such as a vacuum deposition method, a spin coating method, a casting method, an LB method (Langmuir-Blodgett), an inkjet printing method, a laser printing method, a laser-induced thermal imaging method (LITI), and the like.

[0221] Electron transport regions ETR1, ETR2, ETR3, and ETR4 may contain anthracene compounds. However, they are not limited to this; for example, each of the electron transport regions ETR1, ETR2, ETR3, and ETR4 may contain tris(8-hydroxyquinolinato)aluminum (Alq3), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, or 2,4,6-tris(3'-(pyridyl)biphenyl-3-yl)-1,3,5-triazine (T 2T: 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene, 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi: 1, 3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-Diphenyl-1,10-phenanthroline), 3-(4-biphenyl)-4-phenyl-5 -tert-butylphenyl-1,2,4-triazole (TAZ: 3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ: 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole ( tBu-PBD: 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum (BAlq: Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Beryllium bis(benzoquinolin-10-olate) (Bebq2: Beryllium bis(benzoquinolin-10-olate)), 9,10-di(naphthalene-2-yl)anthracene (AND: 9,10-di(naphthalene-2-yl)anthracene), 1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene (BmPyPhB: 1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), and mixtures thereof.

[0222] Further, each of the electron transport regions ETR1, ETR2, ETR3, ETR4 can contain a halogenated metal such as LiF, NaCl, CsF, RbCl, RbI, CuI, KI, a lanthanoid metal such as Yb, and a co-deposited material of the halogenated metal and the lanthanoid metal described above. For example, the electron transport regions ETR1, ETR2, ETR3, ETR4 can contain KI:Yb, RbI:Yb, or the like as the co-deposited material. The electron transport regions ETR1, ETR2, ETR3, ETR4 can contain two or more species selected from the group consisting of Mg, Ag, Yb, and Al. For example, the electron transport regions ETR1, ETR2, ETR3, ETR4 can contain Mg and Yb.

[0223] Further, the electron transport region ETR1, ETR2, ETR3, ETR4 can use a metal oxide such as Li2O, BaO or 8-hydroxyl-Lithium quinolate (Liq: 8-hydroxyl-Lithium quinolate), but the embodiments are not limited thereto. Each of the electron transport regions ETR1, ETR2, ETR3, ETR4 can also be formed of a substance mixed with an electron transport substance and an insulating organo metal salt. The organo metal salt can be a substance having an energy band gap of approximately 4 eV or more. Specifically, for example, the organo metal salt can include a metal acetate, a metal benzoate, a metal acetoacetate, a metal acetylacetonate, or a metal stearate.

[0224] In addition to the above-mentioned materials, each of the electron transport regions ETR1, ETR2, ETR3, ETR4 can further include at least one of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-diphenyl-1,10-phenanthroline), but the embodiments are not limited thereto.

[0225] The electron transport regions ETR1, ETR2, ETR3, ETR4 can include the above-mentioned compound of the electron transport region in the electron injection layer or the electron transport layer. In the case where the electron transport regions ETR1, ETR2, ETR3, ETR4 include the electron-side additional layer, the electron-side additional layer can include the above-mentioned substance. In an embodiment, the electron injection layer EIL4 can be composed of two or more substances selected from Mg, Ag, Yb, and Al. For example, the electron injection layer EIL4 can be composed of a mixture of Mg and Yb.

[0226] For example, the thickness of each of the electron transport regions ETR1, ETR2, ETR3, ETR4 can be approximately 10 nm to approximately 150 nm. The thickness of the electron transport layer can be approximately 0.1 nm to approximately 100 nm, for example, approximately 0.3 nm to approximately 50 nm. In the case where the thickness of the electron transport layer satisfies the above-mentioned range, a satisfactory degree of electron transport characteristics can be obtained without an actual driving voltage rise.

[0227] A second electrode CE is provided on the plurality of light emitting stacks ST1, ST2, ST3, ST4. The second electrode CE can be a common electrode. The second electrode CE can be a cathode or an anode, but embodiments are not limited thereto. For example, in the case where the first electrode AE is an anode, the second electrode CE can be a cathode, and in the case where the first electrode AE is a cathode, the second electrode CE can be an anode.

[0228] The second electrode CE can be a semi-transmissive electrode or a transmissive electrode. In the case where the second electrode CE is a transmissive electrode, the second electrode CE can be formed of a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like.

[0229] In the case where the second electrode CE is a semi-transmissive electrode or a reflective electrode, the second electrode CE can include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, Yb, W, In, Zn, Sn, or a compound or mixture including the same (e.g., AgMg, AgYb, or MgAg). Alternatively, the second electrode CE can be a multi-layer structure including a reflective film or a semi-transmissive film formed of the above-described substances and a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like. For example, the second electrode CE can include the above-described metal materials, a combination of two or more metal materials selected from the above-described metal materials, or an oxide of the above-described metal materials, or the like.

[0230] Although not illustrated, the second electrode CE can be connected with an auxiliary electrode. If the second electrode CE is connected with the auxiliary electrode, the resistance of the second electrode CE can be reduced.

[0231] In addition, a capping layer CPL can be further disposed on the second electrode CE of the light emitting element LED of an embodiment. The capping layer CPL can include a plurality of layers or a single layer.

[0232] In an embodiment, the capping layer CPL can be an organic layer or an inorganic layer. For example, in the case where the capping layer CPL includes an inorganic substance, the inorganic substance can include an alkali metal compound such as LiF, an alkaline earth metal compound such as MgF2, SiON, SiNX SiO y etc.

[0233] For example, in the case where the cover layer CPL contains an organic substance, the organic substance can include α-NPD, NPB, TPD, m-MTDATA, Alq3, CuPc, N4,N4,N4',N4'-tetra(biphenyl-4-yl) biphenyl-4,4'-diamine (TPD15), 4,4',4"-Tris(carbazol-9-yl)triphenylamine (TCTA), or the like, or can include an epoxy resin or an acrylate such as methacrylate.

[0234] Further, the refractive index of the cover layer CPL can be 1.6 or more. Specifically, the refractive index of the cover layer CPL can be 1.6 or more for light in a wavelength range of 550 nm or more and 660 nm or less.

[0235] Referring again to Figure 7 In the light-emitting element LED of one embodiment, the functional layer FNL can be arranged between the first electrode AE and the second electrode CE. Referring to Figure 7 The functional layer FNL can be arranged as a common layer to overlap all of the light-emitting regions EA1, EA2, and EA3 and the pixel definition film PDL. However, embodiments are not limited thereto, and the functional layer FNL can be patterned to be provided separately in correspondence with each of the light-emitting regions EA1, EA2, and EA3. Alternatively, part of the plurality of organic substance layers included in the functional layer FNL can be patterned to be arranged separately in correspondence with the light-emitting regions EA1, EA2, and EA3, respectively, and the remaining part can be arranged as a common layer to overlap all of the light-emitting regions EA1, EA2, and EA3 and the pixel definition film PDL.

[0236] The second electrode CE is provided over the functional layer FNL. The second electrode CE can be a common electrode. The second electrode CE can be a cathode or an anode, but embodiments are not limited thereto. For example, in the case where the first electrode AE is an anode, the second electrode CE can be a cathode, and in the case where the first electrode AE is a cathode, the second electrode CE can be an anode. The second electrode CE can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0237] The encapsulation layer TFE can be disposed on the light emitting element LED. For example, in an embodiment, the encapsulation layer TFE can be disposed on the second electrode CE. Also, in a case where the light emitting element LED includes a cover layer (not shown), the encapsulation layer TFE can be disposed on the cover layer (not shown). As described above, the encapsulation layer TFE can include at least one encapsulation organic film and at least one encapsulation inorganic film, and the encapsulation inorganic film and the encapsulation organic film can be alternately disposed.

[0238] The display device DD of an embodiment can include an optical layer OSL disposed on the display element layer DP-LED. The optical layer OSL can include a light control layer CCL, a color filter layer CFL, and a base layer BL.

[0239] The light control layer CCL can include a light converter. The light converter can be a quantum dot or a phosphor, etc. The light converter can perform wavelength conversion on received light and emit. That is, the light control layer CCL can be a layer including a quantum dot in at least a portion thereof or a layer including a phosphor.

[0240] The light control layer CCL can include a plurality of light control patterns CCP-R, CCP-G, CCP-B. The light control patterns CCP-R, CCP-G, CCP-B can be spaced apart from each other. The light control patterns CCP-R, CCP-G, CCP-B can be disposed spaced apart from each other by a bank BMP. The light control patterns CCP-R, CCP-G, CCP-B can be disposed within a bank opening portion BOH1, BOH2, BOH3 defined in the bank BMP. However, embodiments are not limited thereto. Figure 7 It is shown in the middle that the bank BMP has a rectangular shape in a cross section and does not overlap the light control patterns CCP-R, CCP-G, CCP-B, but at least a portion of an edge of the light control patterns CCP-R, CCP-G, CCP-B can overlap the bank BMP. For example, an edge of the third light control pattern CCP-B can be disposed to overlap the bank BMP in a plan view. The bank BMP can have a trapezoidal shape in a cross section. The bank BMP can have a shape in which a width thereof in a cross section is greater as it is closer to the display element layer DP-LED.

[0241] The light control patterns CCP-R, CCP-G, CCP-B can be portions that convert a wavelength of light provided from the display element layer DP-LED or transmit received light.

[0242] The light control layer CCL can include a first light control pattern CCP-R that provides red light as the first light, a second light control pattern CCP-G that provides green light as the second light, and a third light control pattern CCP-B that provides blue light as the third light. The light control layer CCL can include a first light control pattern CCP-R that converts source light provided from the light emitting element LED to the first light, a second light control pattern CCP-G that converts the source light to the second light, and a third light control pattern CCP-B that transmits the source light. The source light can be blue light. At least a portion of the light control patterns CCP-R, CCP-G, CCP-B can include quantum dots that convert the source light to light of a particular wavelength.

[0243] At least a portion of the light control patterns CCP-R, CCP-G, CCP-B can be formed by an inkjet process. Alternatively, a portion of the light control patterns CCP-R, CCP-G, CCP-B can also be formed by a photoresist process.

[0244] The light control layer CCL can also include scatterers. The first light control pattern CCP-R can include first quantum dots and scatterers, the second light control pattern CCP-G can include second quantum dots and scatterers, and the third light control pattern CCP-B can include scatterers and no quantum dots. Each of the first light control pattern CCP-R, the second light control pattern CCP-G, and the third light control pattern CCP-B can also include a base resin that disperses the quantum dots and the scatterers. In addition, as described below, the third light control pattern CCP-B is formed by a photoresist process, and thus the third light control pattern CCP-B can include a photosensitive resin.

[0245] The light control layer CCL can include a first barrier layer CAP1 disposed on a surface of the light control patterns CCP-R, CCP-G, CCP-B. The light control layer CCL can include a first barrier layer CAP1 that separates the light control patterns CCP-R, CCP-G, CCP-B from the display element layer DP-LED with the light control patterns CCP-R, CCP-G, CCP-B disposed therebetween, and a second barrier layer CAP2 adjacent to the display element layer DP-LED.

[0246] In the display device DD, the optical layer OSL includes a color filter layer CFL disposed on the light control layer CCL. The color filter layer CFL can include color filters CF1, CF2, CF3. The color filter layer CFL can include a first color filter CF1 that transmits the first light, a second color filter CF2 that transmits the second light, and a third color filter CF3 that transmits the source light. In one embodiment, the first color filter CF1 can be a red color filter, the second color filter CF2 can be a green color filter, and the third color filter CF3 can be a blue color filter.

[0247] Each of the color filters CF1, CF2, CF3 includes a high-molecular photosensitive resin and a color material. The first color filter CF1 can include a red color material, the second color filter CF2 can include a green color material, and the third color filter CF3 can include a blue color material. The first color filter CF1 can include a red pigment or a red dye, the second color filter CF2 can include a green pigment or a green dye, and the third color filter CF3 can include a blue pigment or a blue dye.

[0248] The first color filter CF1, the second color filter CF2, and the third color filter CF3 can be respectively arranged in correspondence with the first sub-pixel region PXA-1, the second sub-pixel region PXA-2, and the third sub-pixel region PXA-3. Further, the first color filter CF1, the second color filter CF2, and the third color filter CF3 can be respectively arranged in correspondence with the first light control pattern CCP-R, the second light control pattern CCP-G, and the third light control pattern CCP-B.

[0249] Further, in correspondence with the non-pixel region NPXA arranged between the pixel regions PXA-1, PXA-2, PXA-3, a plurality of color filters CF1, CF2, CF3 which transmit different light from each other can be arranged in overlap. The plurality of color filters CF1, CF2, CF3 can be arranged in overlap in a third direction DR3 which is a thickness direction, thereby distinguishing the boundaries between the adjacent pixel regions PXA-1, PXA-2, PXA-3. In addition, unlike the illustration, the color filter layer CFL can include a light-shielding portion (not illustrated) to distinguish the boundaries between the adjacent color filters CF1, CF2, CF3. The light-shielding portion (not illustrated) can be formed with a blue color filter, or can be formed including an organic light-shielding substance or an inorganic light-shielding substance containing a black pigment or a black dye.

[0250] The optical layer OSL can include a low-refraction layer LR arranged between the light control layer CCL and the color filter layer CFL. The low-refraction layer LR can be arranged between the light control patterns CCP-R, CCP-G, CCP-B and the color filters CF1, CF2, CF3. The low-refraction layer LR can be arranged at an upper portion of the light control layer CCL to block the light control patterns CCP-R, CCP-G, CCP-B from being exposed to moisture / oxygen. Further, the low-refraction layer LR can be arranged between the light control patterns CCP-R, CCP-G, CCP-B and the color filters CF1, CF2, CF3 to function to improve light extraction efficiency or prevent reflected light from being incident to the optical functional layer such as the light control layer CCL. The low-refraction layer LR can be a layer having a refractive index smaller than that of the adjacent other layer.

[0251] In an embodiment, the optical layer OSL can further include a base layer BL disposed on the color filter layer CFL. The base layer BL can be a component that provides a base surface on which the color filter layer CFL and the light control layer CCL, etc. are disposed. The base layer BL can be a glass substrate, a metal substrate, a plastic substrate, etc. However, embodiments are not limited thereto, and the base layer BL can be an inorganic layer, an organic layer, or a composite material layer. In addition, unlike the illustration, in an embodiment, the base layer BL can be omitted.

[0252] The display device DD can further include a filling layer FML disposed between the optical layer OSL and the display panel DP. In an embodiment, the filling layer FML can fill between the optical layer OSL and the display panel DP.

[0253] The filling layer FML can function as a buffer between the optical layer OSL and the display panel DP. In an embodiment, the filling layer FML can function as an impact absorption function, etc., and can increase the strength of the display panel DP. The filling layer FML can be formed with a filling resin including a high molecular resin. For example, the filling layer FML can be formed with a filling resin including an acrylic resin or an epoxy resin, etc.

[0254] In addition, the bank BMP is provided with an open portion OPP overlapping the transmission area TA. The open portion OPP provided in the bank BMP can be disposed with a portion of the filling layer FML. A portion of the optical layer OSL overlapping the transmission area TA can be constituted not to overlap the light control pattern CCP-R, CCP-G, CCP-B, the bank BMP, the color filters CF1, CF2, CF3, etc., and a portion of the optical layer OSL overlapping the transmission area TA can be disposed with a portion of the optically transparent filling layer FML. The filling layer FML can be provided thicker corresponding to the transmission area TA, and can function as an optical function layer that improves light extraction efficiency or prevents downward incidence of reflected light, etc. The filling layer FML can be a layer having a refractive index less than that of an adjacent other layer.

[0255] In addition, in order to improve the transmittance of the transmission area TA in the display panel DP, at least a portion of the insulating layer disposed in the transmission area TA can be removed.

[0256] According to the present embodiment, the base substrate BS, the first insulating layer 10, the second insulating layer 20, and the third insulating layer 30 can be arranged in the transmissive region TA. The fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED can define a transmissive opening portion T-OP overlapping the transmissive region TA. The transmissive opening portion T-OP can be defined by side surfaces formed by making portions of each of the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED, which overlap the transmissive region TA, through. The transmissive opening portion T-OP can be formed by removing a portion of each of the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED by a dry etching process. The transmissive opening portion T-OP can extend along the second direction DR2. That is, the transmissive opening portion T-OP can be provided in a manner corresponding to all of the plurality of transmissive regions TA arranged along the second direction DR2 and the intermediate regions MA arranged between the transmissive regions TA.

[0257] In addition, at least a portion of the functional layer FNL included in the light emitting element LED can be removed by an etching process. As described above, the light emitting element LED can include a plurality of light emitting stacks ST1, ST2, ST3, ST4 each including a light emitting layer BEML1, BEML2, BEML3, GEML, and at least a portion of the plurality of light emitting stacks ST1, ST2, ST3, ST4 is removed in the transmissive region TA corresponding to the transmissive opening portion T-OP. Thereby, at least a portion of the light emitting layer BEML1, BEML2, BEML3, GEML included in each of the plurality of light emitting stacks ST1, ST2, ST3, ST4 can not overlap the transmissive region TA.

[0258] In the present embodiment, the upper surface of the third insulating layer 30 can be exposed from the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED through the transmissive opening portion T-OP. The upper surface of the third insulating layer 30 can be arranged with a packaging inorganic film or the like included in the packaging layer TFE. A packaging organic film T-OL included in the packaging layer TFE can be arranged within the transmissive opening portion T-OP (refer to FIG. 6). Figure 6

[0259] The above description regarding the transmissive region TA can be commonly applied to the unit region PU described in Figure 3 . Thus, in planar view, the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED can define a plurality of opening portions arranged apart in the first direction DR1 and the second direction DR2. The opening portions can be arranged in planar view along the first direction DR1 and the second direction DR2.

[0260] ​According to the present application, the fourth insulating layer 40 including silicon nitride can not be arranged in the transmissive region TA of the display panel DP included in the transparent display device. Therefore, the transmittance of the transmissive region TA can be improved.

[0261] In addition, Figure 7 The transmissive opening portion T-OP corresponding to the transmissive region TA is defined in each of the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED, but is not limited thereto, and the transmissive opening portion T-OP can be further formed in other insulating layers included in the circuit element layer DP-CL. Alternatively, a part of the fourth insulating layer 40, the fifth insulating layer 50, the pixel definition film PDL, and the light emitting element LED can not be defined with the transmissive opening portion T-OP. For example, in a portion corresponding to the transmissive opening portion T-OP, an optically transparent partial layer in the functional layer FNL included in the light emitting element LED can also not be removed.

[0262] Figure 9a And Figure 9b are cross-sectional views of a part of the optical layer according to an embodiment of the present application. Figure 9a shows a cross-section of the optical layer OSL corresponding to the III-III' cross-sectional line of Figure 5b Figure 9b shows a cross-section of the optical layer OSL corresponding to the IV-IV' cross-sectional line of Figure 5b In addition, for convenience of explanation, in Figure 9a and Figure 9b , the third direction DR3 is indicated as a downward direction. That is, a cross-section inverted upward and downward from the cross-section shown in Figure 6 and Figure 7 is shown, and the explanation is made with the third direction DR3 being an upper direction and the opposite direction of the third direction DR3 being a lower direction.

[0263] Referring to Figure 5a , Figure 5b , Figure 6 , Figure 7 , Figure 9a and Figure 9b together, the optical layer OSL includes a block pattern BP. The block pattern BP can be arranged at least in correspondence with the intermediate region MA provided between the transmissive regions TA. The block pattern BP can overlap at least the intermediate region MA in a planar view. The block pattern BP can include a first block pattern BP1 arranged in the first intermediate region MA1. The block pattern BP includes a second block pattern BP2 arranged in the second intermediate region MA2, a third block pattern BP3 arranged in the third intermediate region MA3, and a fourth block pattern BP4 arranged in the fourth intermediate region MA4. In addition, in Figure 9a and Figure 9b ​For ease of explanation, the following will be used: Figure 5a The first blocking pattern BP1, the second blocking pattern BP2, the third blocking pattern BP3 and the fourth blocking pattern BP4 shown are respectively referred to as "blocking pattern BP". The transmission regions TA1, TA2, TA3, TA4, TA5 and TA6 included in each unit region PU are respectively referred to as "transmission region TA". The first intermediate region MA1, the second intermediate region MA2, the third intermediate region MA3 and the fourth intermediate region MA4 on which the blocking pattern BP is arranged are respectively referred to as "intermediate region MA".

[0264] The blocking pattern BP can be placed below the low-refractive layer LR. The blocking pattern BP can also be placed directly below the second blocking layer CAP2.

[0265] like Figure 9b As shown, at least a portion of the blocking pattern BP is disposed within the open portion OPP provided in the embankment BMP. At least a portion of the blocking pattern BP can be disposed between the inner surfaces BMP-S of the defined open portion OPP of the embankment BMP. At least a portion of the blocking pattern BP can be disposed directly below the second blocking layer CAP2 disposed within the open portion OPP.

[0266] The blocking pattern BP can contain an optically transparent material. Within the wavelength range of visible light, the blocking pattern BP can have a light transmittance of 80% or more and 99% or less. Because the blocking pattern BP contains an optically transparent material, the transmittance of the display device DD will not decrease even if a portion of the blocking pattern BP overlaps with the transmissive region TA and the intermediate region MA.

[0267] The blocking pattern BP may include a blocking portion BPP disposed within the open portion OPP and a spacer portion SPP overlapping the dam BMP in a plane. The spacer portion SPP may be disposed below the dam BMP. The spacer portion SPP may be disposed directly below the second blocking layer CAP2 disposed below the dam BMP. The spacer portion SPP may be provided to maintain the spacing between the optical layer OSL and the display panel DP during the bonding process of the optical layer OSL and the display panel DP, and to support the components included in the optical layer OSL and the display panel DP in intermediate steps of the process to prevent damage.

[0268] The barrier portion (BPP) and the spacer portion (SPP) can contain the same material. The barrier portion (BPP) and the spacer portion (SPP) can be formed together using the same process. For example... Figure 9bAs shown, the barrier portion BPP and the spacer portion SPP can be connected to each other to have an integrated shape. A portion of the barrier portion BPP can extend to be disposed on the second barrier layer CAP2 disposed on the inner side surface BMP-S of the bank BMP, so as to be connected to the spacer portion SPP disposed on the lower portion of the bank BMP, with each other.

[0269] The barrier pattern BP can have a thickness smaller than a thickness of the bank BMP. The barrier pattern BP can have a thickness smaller than a thickness of each of the bank BMP and the light control pattern CCP-R included in the light control layer CCL.

[0270] The optical layer OSL of the display device DD according to an embodiment includes the barrier pattern BP disposed corresponding to the intermediate region MA provided between the transmissive regions TA, so as to be capable of improving the durability of the display device DD. More specifically, in the display device DD according to an embodiment, when a portion of the encapsulation organic film T-OL in the encapsulation layer TFE of the display panel DP is peeled, the barrier pattern BP included in the optical layer OSL can be utilized to prevent the peeling of the encapsulation organic film T-OL from spreading in one direction (for example, the second direction DR2), so as to be capable of improving the durability of the display device DD.

[0271] Referring again to Figure 5a , Figure 5b , Figure 6 , Figure 7 , Figure 9a and Figure 9b , in the display panel DP of the display device DD according to an embodiment, in the case where a foreign matter exists between the encapsulation organic film T-OL of the encapsulation layer TFE and the first encapsulation inorganic film T-IOL1 disposed on the lower portion thereof, peeling can occur between the encapsulation organic film T-OL and the first encapsulation inorganic film T-IOL1 disposed on the lower portion thereof in a process of bonding the display panel DP and the optical layer OSL and performing heat treatment, and the peeling that occurs can spread in one direction. In particular, the transmissive opening portion T-OP is defined in the transmissive region TA and the intermediate region MA provided between the transmissive regions TA, and the encapsulation layer TFE is formed to be thicker than other portions at such a transmissive opening portion T-OP, so that peeling is likely to occur between the encapsulation organic film T-OL and the first encapsulation inorganic film T-IOL1 disposed on the lower portion thereof, and the peeling is likely to spread in one direction.

[0272] In the existing display device, in the case of peeling occurring in the transmissive region TA, with the first direction DR1 as the reference, the fourth insulating layer 40, the fifth insulating layer 50, and the pixel definition film PDL of the display panel DP are arranged thicker on both sides of the transmissive region TA, and the bank BMP of the optical layer OSL is also arranged, so the peeling is not easy to propagate to the first direction DR1. However, with the second direction DR2 as the reference, the transmissive opening portion T-OP of the display panel DP extends, and the open portion OPP of the optical layer OSL also extends, so the peeling occurring between the encapsulation organic film T-OL and the first encapsulation inorganic film T-IOL1 arranged below the encapsulation organic film T-OL can propagate along the second direction DR2 without being blocked. However, in the case of the display device DD according to an embodiment of the present application, the optical layer OSL includes the blocking pattern BP arranged corresponding to the middle region MA provided between the transmissive regions TA, so in the middle region MA, the thickness of the encapsulation layer TFE and the filling layer FML is reduced due to the blocking pattern BP, so the peeling occurring in part of the transmissive region TA can be blocked by the part arranged with the blocking pattern BP. That is, in the display device DD according to an embodiment, the peeling occurring in part of the transmissive region TA can be prevented from propagating along the second direction DR2, so the durability of the display device can be improved.

[0273] Figure 10 is a sectional view of a part of the optical layer according to an embodiment of the present application. As Figure 9b , Figure 10 is shown, the sectional view of the optical layer OSL corresponding to the IV-IV' section line of Figure 5b , and the optical layer OSL' of an embodiment different from the embodiment shown in Figure 9b .

[0274] Referring to Figure 10 , unlike the blocking pattern BP shown in Figure 9b , in the blocking pattern BP' of an embodiment, the blocking part BPP' and the spacing part SPP' can not have an integral shape. The blocking part BPP' and the spacing part SPP' can be spaced apart from each other in a direction. The blocking part BPP' can be arranged within the open portion OPP, and can be spaced apart from the inner side surface BMP-S of the bank BMP by a predetermined interval. The spacing part SPP' can overlap the bank BMP in the plane. The spacing part SPP' can be patterned to be arranged only in a part of the lower portion of the bank BMP.

[0275] The blocking part BPP' and the spacing part SPP' can contain the same substance. The blocking part BPP' and the spacing part SPP' can be formed together by the same process. The blocking part BPP' and the spacing part SPP' are formed by the same process, but can be patterned to be spaced apart from each other to be formed.

[0276] Figure 11 is a sectional view of a part of a display device according to an embodiment of the present application. Figure 11 shows a section of the display device DD' corresponding to the IV-IV' section line of Figure 5b and shows a section of the display device DD' including the optical layer OSL explained in Figure 9b

[0277] Referring to Figure 9b and Figure 11 together, the display panel DP of the display device DD' of an embodiment can include a signal line SGL arranged in the intermediate region MA. The signal line SGL can be a wiring region electrically connecting between adjacent pixels. The signal line SGL can include the above-mentioned sensing line, power supply line, data line, and scanning line, and the like. The signal line SGL can be electrically connected to each of the light emitting elements LED included in each of the adjacent pixels.

[0278] Referring to Figure 5a , Figure 9b and Figure 11 together, the intermediate regions MA can correspond to the wiring regions, respectively. The intermediate regions MA can be regions in which the signal line SGL including the above-mentioned sensing line, power supply line, data line, and scanning line, and the like is arranged, respectively. The blocking pattern BP can be arranged in the intermediate regions MA, so that at least a part of the blocking pattern BP can overlap the signal line SGL in a planar view. In the display device DD' of an embodiment, the blocking pattern BP is arranged corresponding to the intermediate regions MA in which the signal line SGL is arranged, so that a region in which the transmittance is high can be maximally secured in regions corresponding to the open portion OPP and the transmissive opening portion T-OP. Thereby, the transmittance of the transparent display device DD' can be improved.

[0279] Figure 12a and Figure 12b are plan views each of which partially enlarges a part of a configuration of a display device according to an embodiment of the present application. Figure 12a and Figure 12b each show a planar arrangement shape of the dam BMP and the blocking pattern BP corresponding to an embodiment different from the embodiment shown in Figure 5b

[0280] Referring to Figure 5a , Figure 5b , Figure 12a and Figure 12b together, the dam BMP can be defined with the open portion OPP corresponding to the transmissive region TA, and the open portion OPP can correspond to all of the plurality of transmissive regions TA arranged along the second direction DR2 and the intermediate regions MA arranged therebetween. ​​

[0281] The blocking pattern BP can be arranged in correspondence with at least a portion of the intermediate region MA. The blocking pattern BP can overlap at least a portion of the intermediate region MA.

[0282] In an embodiment, as shown in FIG. 1, the blocking pattern BP can be provided to overlap the entire intermediate region MA. The blocking pattern BP includes a first blocking pattern BP1 arranged in the first intermediate region MA1, a second blocking pattern BP2 arranged in the second intermediate region MA2, a third blocking pattern BP3 arranged in the third intermediate region MA3, and a fourth blocking pattern BP4 arranged in the fourth intermediate region MA4. Figure 5b Alternatively, the blocking pattern BP can be provided to overlap only a portion of the intermediate region MA. As shown in FIG. 2, the blocking pattern BP can include a first blocking pattern BP1 arranged in the first intermediate region MA1 and a second blocking pattern BP2 arranged in the second intermediate region MA2. There can be no overlapping of the blocking pattern BP in the third intermediate region MA3 and the fourth intermediate region MA4. The blocking pattern BP can not be provided in the third intermediate region MA3 and the fourth intermediate region MA4.

[0283] Figure 12a Alternatively, as shown in FIG. 3, the blocking pattern BP can include a first blocking pattern BP1 arranged in the first intermediate region MA1 and a third blocking pattern BP3' arranged in the fourth intermediate region MA4. There can be no overlapping of the blocking pattern BP in the second intermediate region MA2 and the third intermediate region MA3. The blocking pattern BP can not be provided in the second intermediate region MA2 and the third intermediate region MA3. Figure 12b

[0284] The above, with reference to the preferred embodiments of the present application has been described, but as long as the ordinary skilled in the art or in the art within the scope of the present application can be understood that the ordinary people can be modified and changed in the present application without departing from the scope of the appended claims of the present application. Therefore, the technical scope of the present application is not limited to the contents described in the detailed description of the specification, but should be determined by the claims.​​

Claims

1. A display device, characterized by comprising: The display device includes: a display panel including a plurality of unit areas each including a plurality of sub-pixel areas and a transmissive area adjacent to the plurality of sub-pixel areas in a first direction, and providing source light; and an optical layer disposed on the display panel, transmitting the source light or converting the source light into light of a different wavelength, wherein the plurality of unit areas includes: a first unit area; and a second unit area adjacent to the first unit area in a second direction intersecting the first direction, wherein the transmissive area of the first unit area and the transmissive area of the second unit area are adjacent in the second direction, a first intermediate area being defined between the transmissive area of the first unit area and the transmissive area of the second unit area, wherein the optical layer includes a blocking pattern overlapping at least the first intermediate area in a plane.

2. The display device according to claim 1, wherein: the optical layer further includes a light control layer, wherein the light control layer includes: a bank disposed on the display panel and defined with a plurality of bank opening portions corresponding to the plurality of sub-pixel areas, respectively; and a plurality of light control patterns disposed inside the plurality of bank opening portions, respectively.

3. The display device according to claim 2, wherein: the bank is defined with an open portion corresponding to the transmissive area, at least a portion of the blocking pattern is disposed within the open portion.

4. The display device according to claim 3, wherein: the blocking pattern includes: a blocking portion disposed within the open portion; and a spacer portion overlapping the bank in a plane, wherein the blocking portion and the spacer portion are composed of the same substance.

5. The display device according to claim 4, wherein: the spacer portion and the blocking portion are connected to each other to have an integrated shape.

6. The display device according to claim 4, wherein: the blocking portion is spaced apart from an inner side surface of the bank defining the open portion.

7. The display device according to claim 2, wherein: a thickness of the blocking pattern is smaller than a thickness of the bank.

8. The display device according to claim 2, wherein: the optical layer further includes a color filter layer disposed on the light control layer and including a plurality of color filters.

9. The display device according to claim 1, wherein: the plurality of unit areas further includes: a third unit area adjacent to the first unit area in the first direction; and a fourth unit area adjacent to the third unit area in the second direction, wherein the transmissive area of the third unit area and the transmissive area of the fourth unit area are adjacent in the second direction, a second intermediate area being defined between the transmissive area of the third unit area and the transmissive area of the fourth unit area, wherein the blocking pattern includes: a first blocking pattern overlapping the first intermediate area; and a second blocking pattern overlapping the second intermediate area.

10. The display device according to claim 9, the plurality of unit regions further include: a fifth unit region adjacent to the second unit region in the second direction; and a sixth unit region adjacent to the fifth unit region in the first direction, wherein the transmissive region of the second unit region and the transmissive region of the fifth unit region are adjacent in the second direction, a third intermediate region being defined between the transmissive region of the second unit region and the transmissive region of the fifth unit region, wherein the barrier pattern does not overlap the third intermediate region.

11. The display device according to claim 10, wherein the transmissive region of the fourth unit region and the transmissive region of the sixth unit region are adjacent in the second direction, a fourth intermediate region being defined between the transmissive region of the fourth unit region and the transmissive region of the sixth unit region, wherein the barrier pattern further includes: a third barrier pattern overlapping the fourth intermediate region.

12. The display device according to claim 1, wherein the barrier pattern is composed of an optically transparent substance.

13. The display device according to claim 1, wherein the plurality of sub-pixel regions include a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region arranged in order in the second direction, the transmissive region overlaps the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region, respectively, in the first direction.

14. The display device of claim 1, wherein further including: a filler disposed between the display panel and the optical layer.

15. The display device according to claim 1, wherein the display panel includes: a plurality of light emitting elements that generate the source light; and signal lines, at least a portion of the signal lines being electrically connected to the plurality of light emitting elements, wherein at least a portion of the signal lines overlaps the barrier pattern in a planar view.

16. The display device according to claim 15, wherein the display panel further includes an encapsulation layer covering the plurality of light emitting elements, wherein the encapsulation layer includes at least one encapsulation inorganic film and at least one encapsulation organic film.

17. The display device according to claim 15, wherein the display panel further includes: a pixel definition film in which a light emitting opening portion in which each of the plurality of light emitting elements is disposed and a transmissive opening portion corresponding to the transmissive region are defined.

18. A display device comprising: including: a display panel including a plurality of unit regions and providing source light, each of the plurality of unit regions including a plurality of sub-pixel regions and a transmissive region adjacent to the plurality of sub-pixel regions in a first direction; and an optical layer disposed on the display panel, the optical layer transmitting the source light or converting the source light into light of a different wavelength, wherein the plurality of unit regions include: a first unit region; and a second unit region adjacent to the first unit region in a second direction intersecting the first direction, wherein the optical layer includes: a light control layer including a bank and a plurality of light control patterns, the bank being defined with a plurality of bank opening portions respectively corresponding to the plurality of sub-pixel regions and an open portion corresponding to the transmission region, the plurality of light control patterns being respectively arranged inside the plurality of bank opening portions; and a barrier pattern arranged in a plane between the transmission region of the first unit region and the transmission region of the second unit region, and at least a portion of the barrier pattern being arranged inside the open portion.

19. The display device according to claim 18, wherein the barrier pattern is composed of an optically transparent substance.

20. A display device comprising: including: a display panel including a plurality of unit regions and providing source light, each of the plurality of unit regions including a plurality of sub-pixel regions and a transmission region adjacent to the plurality of sub-pixel regions in a first direction; and an optical layer arranged on the display panel, transmitting the source light or converting the source light into light of a different wavelength, wherein the plurality of unit regions include: a first unit region; and a second unit region adjacent to the first unit region in a second direction intersecting the first direction, wherein the optical layer includes: a bank defined with a plurality of bank opening portions respectively corresponding to the plurality of sub-pixel regions and an open portion corresponding to the transmission region; and a barrier pattern, a portion of the barrier pattern being arranged in a plane between the transmission region of the first unit region and the transmission region of the second unit region, wherein the barrier pattern includes: a barrier portion arranged in a plane between the transmission region of the first unit region and the transmission region of the second unit region; and a spacing portion overlapping the bank in a plane, composed of the same substance as the barrier portion.

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