Collecting device for silicon carbide

Abstract

The collecting device comprises a main body, a cover body, a supporting sleeve and a collecting part, a main cavity opened towards the top is formed in the main body, the main cavity is suitable for containing a silicon carbide raw material, the cover body is arranged at the top of the main body, and the edge of the cover body is in sealed connection with the main body; a vent hole communicated with the main cavity is formed in the cover body, the supporting sleeve is arranged at the top of the cover body in a sleeving mode, a gas cavity is formed in the supporting sleeve and communicated with the main cavity through the vent hole, the collecting part is arranged at the top of the supporting sleeve, and a collecting cavity communicated with the gas cavity is formed in the supporting sleeve; and a plurality of layers of collecting soft felts are arranged in the collecting cavity, so that the collecting degree of the collecting part on excessive components overflowing in the sublimation process can be improved.

Description

Technical Field

[0001] This application relates to the field of materials processing equipment, and in particular to a collection device for silicon carbide. Background Technology

[0002] In related technologies, the physical vapor transport method is typically used in the growth of silicon carbide crystals. This involves heating silicon carbide powder to sublimate it and depositing it under certain conditions to form a single crystal. However, during the sublimation process, the heating of the silicon carbide powder generates excess gaseous components, such as gases or tiny particles. If these components are not effectively collected, they will not only affect the quality of crystal growth but may also contaminate the internal environment of the growth equipment and even interfere with the stability of the thermal field. Therefore, improving the collection efficiency of the excess components overflowing during sublimation is the technical problem that this application aims to solve. Utility Model Content

[0003] This application aims to at least address one of the technical problems existing in the prior art. To this end, one object of this application is to provide a collection device for silicon carbide that can improve the collection degree of excess components overflowing during sublimation.

[0004] A silicon carbide collection device according to an embodiment of this application includes: a main body having a main cavity open to the top, the main cavity being adapted to contain silicon carbide raw material; a cover being disposed on the top of the main body, the edge of the cover being sealed to the main body, and a vent hole communicating with the main cavity being formed on the cover; a support sleeve being sleeved on the top of the cover, the support sleeve having a gas cavity formed inside, the gas cavity communicating with the main cavity through the vent hole; and a collection section being disposed on the top of the support sleeve, the collection section having a collection chamber communicating with the gas cavity, and multiple layers of collection felt being disposed inside the collection chamber.

[0005] According to an embodiment of this application, a collection device for silicon carbide is provided. By providing vent holes on the cover, a gas channel can be created for excess components overflowing during sublimation in the main chamber. These components then enter the gas chamber within the support sleeve. A collection section is located at the top of the support sleeve, and a collection cavity formed within the collection section communicates with the gas chamber. The collection cavity contains multiple layers of soft collecting felt. These multiple layers of soft collecting felt increase the contact area with the excess gaseous components. When the excess gaseous components enter the collection cavity from the gas chamber, due to the multi-layered structure and large surface area of ​​the soft collecting felt, the gas and fine particles in the gaseous components have more opportunities to contact the soft collecting felt, thereby being adsorbed or intercepted on it. The multiple layers of soft collecting felt can more effectively capture the excess components, significantly improving the collection effect and thus enhancing the overall collection efficiency of the collection device for excess components overflowing during sublimation.

[0006] According to some embodiments of this application, in a silicon carbide collection device, at least a portion of the cover protrudes from the top of the body and has external threads formed on its outer periphery, and a support sleeve is fitted around the outer periphery of the cover, the inner wall of the support sleeve having internal threads and sealing with the outer peripheral threads of the cover.

[0007] According to some embodiments of this application, a collection device for silicon carbide includes: a mating sleeve disposed at the top of a supporting sleeve, the bottom of the mating sleeve forming a first sleeve portion for sleeved connection with the supporting sleeve, and the top of the mating sleeve forming an annular wall with a diameter larger than the first sleeve portion, the annular wall defining a bottom collection cavity; and an extension sleeve disposed at the top of the mating sleeve, the top of the extension sleeve forming a top collection cavity, the top collection cavity communicating with the bottom collection cavity and constituting the collection cavity; wherein the bottom collection cavity and the top collection cavity are respectively provided with the collection felt.

[0008] According to some embodiments of this application, the annular wall is formed with stepped segments connected sequentially in the height direction, wherein the diameter of the stepped segments near the bottom is smaller than the diameter near the top.

[0009] According to some embodiments of the present application, a collection device for silicon carbide is provided inside the expansion sleeve, the isolation plate separating the top collection cavity and the bottom collection cavity, and a through hole is formed at the center of the isolation plate to communicate between the top collection cavity and the bottom collection cavity.

[0010] According to some embodiments of the present application, a collection device for silicon carbide is provided in the bottom collection cavity, wherein the first collection soft felt is constructed as a plurality of stacked in the thickness direction, and at least one of the first collection soft felts is provided with an avoidance hole to avoid the through hole.

[0011] According to some embodiments of the present application, in the silicon carbide collection device, the diameter of the clearance holes of the plurality of first collection felts decreases near the isolation plate.

[0012] According to some embodiments of this application, a collection device for silicon carbide is provided in the top collection cavity, wherein a plurality of second collection soft felts are arranged in a stacked manner in the thickness direction, and at least one second collection soft felt is disposed on the top of the isolation plate, and the second collection soft felt is arranged in annular shape and avoids the through hole.

[0013] According to some embodiments of the present application, the collection device for silicon carbide, the main body, the support sleeve, and the collection part are all constructed of graphite.

[0014] According to some embodiments of the present application, the height of the main body is L1, the height of the support sleeve is L2, and the following conditions are met: 45% ≤ L2 / L1 ≤ 70%.

[0015] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0016] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0017] Figure 1 This is a schematic diagram of the structure of a silicon carbide collection device according to an embodiment of this application;

[0018] Figure 2 This is an enlarged structural schematic diagram of point A of the silicon carbide collection device according to an embodiment of this application;

[0019] Figure 3 This is a schematic diagram of the cover structure of a silicon carbide collection device according to an embodiment of this application;

[0020] Figure 4 This is a schematic diagram of the isolation plate structure of a silicon carbide collection device according to an embodiment of this application.

[0021] Figure label:

[0022] 100. Collection device;

[0023] 1. Main body; 11. Main cavity;

[0024] 2. Cover; 21. Vent hole;

[0025] 3. Support sleeve; 31. Gas chamber;

[0026] 4. Collection Department;

[0027] 41. Collection chamber; 42. Collection of soft felt;

[0028] 43. Matching sleeve; 431. First sleeve part; 432. Annular wall; 433. Bottom collecting cavity; 4331. First collecting soft felt; 4332. Clearance hole;

[0029] 44. Extending sleeve; 441. Top collecting chamber; 442. Isolation plate; 4421. Through hole; 4422. Second collecting felt;

[0030] 5. Silicon carbide raw materials;

[0031] 6. Seed crystal. Detailed Implementation

[0032] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0033] The following is for reference. Figures 1-4 A collection device 100 for silicon carbide according to an embodiment of this application is described.

[0034] According to an embodiment of this application, a silicon carbide collection device 100 includes a main body 1, a cover 2, a support sleeve 3, and a collection part 4. The main body 1 has a main cavity 11 that opens to the top and is suitable for containing silicon carbide raw material 5. The cover 2 is disposed on the top of the main body 1, and the edge of the cover 2 is sealed to the main body 1. A vent hole 21 communicating with the main cavity 11 is formed on the cover 2. The support sleeve 3 is sleeved on the top of the cover 2, and a gas cavity 31 is formed inside the support sleeve 3. The gas cavity 31 communicates with the main cavity 11 through the vent hole 21. The collection part 4 is disposed on the top of the support sleeve 3, and a collection chamber 41 communicating with the gas cavity 31 is formed inside the collection part 4. Multiple layers of collection soft felt 42 are disposed inside the collection chamber 41.

[0035] In related technologies, the physical vapor transport method is typically used in the growth of silicon carbide crystals. This involves heating silicon carbide powder to sublimate it and depositing it under certain conditions to form a single crystal. However, during the sublimation process, heating the silicon carbide powder generates excess gaseous components, such as gases or tiny particles. If these components are not effectively collected, they can not only affect the quality of crystal growth but also potentially contaminate the internal environment of the growth equipment and even interfere with the stability of the thermal field.

[0036] Understandably, the structural design of the main body 1 and the cover 2 is fundamental. The main cavity 11 formed inside the main body 1 is used to contain the silicon carbide raw material 5. The cover 2 is set on the top of the main body 1 and its edge is sealed to the main body 1. This sealing design can ensure that the excess gaseous components generated during the sublimation process will not escape from the connection between the main body 1 and the cover 2, but are confined within the main cavity 11. This creates a closed space for subsequent collection, avoids the disorderly diffusion of excess components, and is a prerequisite for achieving efficient collection. At the same time, the main cavity 11 is the main reaction site. Seed crystals 6 can be set on the side of the cover 2 facing the main cavity 11, so that a large amount of silicon carbide can crystallize on the seed crystals 6. During the silicon carbide sublimation process, the silicon carbide that has not crystallized on the seed crystals 6 can flow to the next cavity through the vent 21 on the cover 2.

[0037] The vent 21 and the support sleeve 3 form a transport channel for excess components. The vent 21 on the cover 2 is connected to the main cavity 11. The support sleeve 3 is fitted on the top of the cover 2, and its internal gas cavity 31 is connected to the main cavity 11 through the vent 21. This allows excess gaseous components generated by sublimation in the main cavity 11 to enter the gas cavity 31 of the support sleeve 3 through the vent 21, realizing the directional transport of excess components from the main cavity 11 to the gas cavity 31. This avoids the accumulation of excess components in the main cavity 11 and ensures the smoothness of the transport process, providing convenient conditions for subsequent collection. It should be noted that when gas enters the gas cavity 31 of the support sleeve 3 through the vent 21, the cavity space expands and the flow rate decreases. After the airflow velocity decreases, larger particles carried, such as unsublimated SiC powder, cannot continue to rise with the airflow due to gravity and are easily deposited at the bottom of the gas cavity 31, achieving primary separation.

[0038] The collecting section 4 is located at the top of the supporting sleeve 3. The collecting cavity 41 formed within the collecting section 4 is connected to the gas cavity 31, and multiple layers of collecting soft felt 42 are provided within the collecting cavity 41. The multiple layers of collecting soft felt 42 increase the contact area with excess gaseous components. When excess gaseous components enter the collecting cavity 41 from the gas cavity 31, due to the multi-layer structure and large surface area of ​​the collecting soft felt 42, the gas and tiny particles in the gaseous components have more opportunities to come into contact with the collecting soft felt 42, thereby being adsorbed or intercepted on the collecting soft felt 42. Compared to a single collecting structure, the multi-layer collecting soft felt 42 can more fully capture excess components, significantly improving the collection effect of excess components, and thus improving the collection degree of the entire collecting device 100 for excess components overflowing during sublimation.

[0039] The silicon carbide collection device 100 of this application embodiment forms a complete collection system through the combined action of the sealing structure of the main body 1 and the cover 2, the transmission channel of the vent 21 and the support sleeve 3, and the multi-layer collection soft felt 42 in the collection part 4. The various parts cooperate with each other to achieve the beneficial effect of improving the collection degree of the collection device 100 for excess components overflowing during sublimation.

[0040] According to some embodiments of this application, in a silicon carbide collection device 100, at least a portion of the cover 2 protrudes from the top of the body 1 and has an external thread formed on its outer periphery. A support sleeve 3 is fitted around the outer periphery of the cover 2, and the inner wall of the support sleeve 3 has an internal thread formed and is sealed with the outer periphery thread of the cover 2.

[0041] The threaded connection enhances the tightness and stability of the connection between the cover 2 and the support sleeve 3. The cover 2 protrudes at least partially from the top of the main body 1 and forms external threads on its outer periphery. The internal threads on the inner wall of the support sleeve 3 engage with these threads. During tightening, the helical structure of the threads generates axial pressure between the two, ensuring a tight fit at the contact points. This effectively reduces connection gaps and prevents excess gaseous components from leaking from the connection. If these components leak from the connection between the cover 2 and the support sleeve 3 during the sublimation of silicon carbide powder, it will reduce collection efficiency and pollute the external environment. The improved tightness of the threaded connection ensures that excess gaseous components can only enter the collection system through pre-designed vent holes 21 and other channels, laying the foundation for efficient subsequent collection. Simultaneously, the threaded sealing connection helps maintain the stability of the internal thermal field. During silicon carbide crystal growth, a stable thermal field is crucial for crystal quality. If the connection between the cover 2 and the support sleeve 3 is not tight, leakage of excess gaseous components may lead to abnormal gas flow inside the device, thus affecting the thermal field distribution. Threaded sealing connections reduce the possibility of leakage, allowing gas flow inside the device to follow a preset path, maintaining the uniformity and stability of the thermal field. A stable thermal environment not only improves the growth quality of silicon carbide crystals but also extends the service life of the growth equipment and reduces the risk of equipment failure due to thermal instability.

[0042] According to some embodiments of this application, a collection device 100 for silicon carbide includes a collection section 4 comprising a mating sleeve 43 and an extending sleeve 44. The mating sleeve 43 is disposed on the top of a supporting sleeve 3. The bottom of the mating sleeve 43 forms a first fitting portion 431 for fitting and connecting with the supporting sleeve 3. The top of the mating sleeve 43 forms an annular wall 432 with a diameter larger than the first fitting portion 431. A bottom collection cavity 433 is defined within the annular wall 432. The extending sleeve 44 is disposed on the top of the mating sleeve 43. A top collection cavity 441 is formed on the top of the extending sleeve 44. The top collection cavity 441 and the bottom collection cavity 433 are interconnected and constitute a collection cavity 41. A collection soft felt 42 is respectively provided in the bottom collection cavity 433 and the top collection cavity 441.

[0043] The first sleeve portion 431 at the bottom of the sleeve 43 is sleeved and connected to the support sleeve 3, so that the excess gas phase components transmitted from the gas cavity 31 of the support sleeve 3 can smoothly enter the bottom collection cavity 433 of the sleeve 43. The top diameter of the sleeve 43 is larger than the annular wall 432 of the first sleeve portion 431, which not only plays a limiting role in structure to prevent the expansion sleeve 44 from shifting during installation, but also provides a stable accommodating space for the bottom collection cavity 433, so that the velocity of the gas at the top of the sleeve 43 is further reduced, ensuring that the gas phase components can fully contact the collection soft felt 42 in the bottom collection cavity 433. The collection part 4 is constructed into a connected collection cavity 41 through the bottom collection cavity 433 of the sleeve 43 and the top collection cavity 441 of the expansion sleeve 44. The collection soft felt 42 is arranged in layers in the two cavities, increasing the number of layers of the collection soft felt 42 and expanding the contact area with the excess gas phase components. As the gaseous components pass sequentially through the bottom collection chamber 433 and the top collection chamber 441, the multi-layer collection felt 42 can capture gas and tiny particles from different layers, thereby significantly improving collection efficiency.

[0044] According to some embodiments of this application, a silicon carbide collection device 100 has an annular wall 432 formed with stepped segments connected sequentially in the height direction, wherein the diameter of the stepped segments near the bottom is smaller than the diameter near the top.

[0045] Understandably, the stepped section's diameter, which is larger at the top and smaller at the bottom, effectively guides the flow of excess gaseous components. Specifically, after the excess gaseous components generated by silicon carbide sublimation enter the bottom collection chamber 433 of the mating sleeve 43 from the support sleeve 3, the gas velocity decreases as the channel diameter gradually increases due to the stepped section of the annular wall 432. According to fluid mechanics principles, the reduced gas velocity makes the gas molecules move more smoothly, allowing more time for the tiny particles and gas molecules in the gaseous components to contact the collecting felt 42, thereby increasing the probability of being adsorbed or intercepted by the collecting felt 42. The gradually changing diameter of the stepped section of the annular wall 432 guides the gaseous components to flow upward more evenly, reducing eddies caused by sudden changes in airflow direction. The stable airflow makes the gaseous components more evenly distributed in the collection chamber 41 and more fully contacted with the collecting felt 42, further improving the collection effect of the collection device 100 on excess gaseous components and ensuring the stability and efficiency of the collection process.

[0046] According to some embodiments of the present application, a collection device 100 for silicon carbide is provided in an extension sleeve 44, an isolation plate 442 is provided inside the sleeve 44, the isolation plate 442 separates the top collection cavity 441 and the bottom collection cavity 433, and a through hole 4421 is formed at the center of the isolation plate 442 to communicate between the top collection cavity 441 and the bottom collection cavity 433.

[0047] During the silicon carbide crystal growth process, the temperature inside the collecting device 100 changes due to heat generation and accumulation. The through-holes 4421 on the isolation plate 442 can promote heat exchange between the top collecting chamber 441 and the bottom collecting chamber 433, preventing excessive heat accumulation in one chamber. When the temperature of the bottom collecting chamber 433 rises due to gas phase component flow friction, heat release from the collecting felt 42, etc., the high-temperature gas can flow through the through-holes 4421 to the top collecting chamber 441, mixing with the relatively low-temperature gas in the top collecting chamber 441, thus achieving heat transfer and diffusion, thereby balancing the temperature of the two chambers. The temperature tends to be balanced, and at the same time, heat exchange can prevent local overheating from negatively affecting the performance of the collecting soft felt 42. If the collecting soft felt 42 is in a high-temperature environment for a long time, its adsorption performance and physical structure may be damaged. The temperature balancing effect brought by the through hole 4421 can effectively protect the collecting soft felt 42 and maintain its stable collection performance. During the start-up and shutdown of the device, the through hole 4421 helps to speed up the temperature response, enabling the collecting device 100 to adapt to temperature changes more quickly, reducing the interference of temperature fluctuations on the collection effect, and further ensuring the stability and efficiency of the collection process.

[0048] According to some embodiments of the present application, a silicon carbide collection device 100 is provided in a bottom collection cavity 433, wherein a first collection soft felt 4331 is provided. The first collection soft felt 4331 is constructed as a plurality of stacked in the thickness direction, and at least one of the first collection soft felts 4331 is provided with an avoidance hole 4332 to avoid the through hole 4421.

[0049] The clearance hole 4332 on the first collecting felt 4331 corresponds to the through hole 4421 of the isolation plate 442, effectively preventing the collecting felt 42 from obstructing the flow path of the gas phase components. When excess gas phase components are transferred from the bottom collecting chamber 433 to the top collecting chamber 441, if the collecting felt 42 has no clearance hole 4332, the first collecting felt 4331 and the gas phase components collected by the first collecting felt 4331 will directly block the through hole 4421, causing other smaller gas phase components to be unable to pass smoothly through the isolation plate 442 into the top collecting chamber 441, and thus accumulate in the bottom collecting chamber 433. This not only affects the normal transmission of gas phase components, but may also damage the sealing structure of the collecting device 100. The clearance hole 4332 provides a flow channel for the gas phase components, allowing them to flow from the bottom collecting chamber 433 through the through hole 4421 of the isolation plate 442 to the top collecting chamber 441 according to a predetermined path, ensuring the smoothness and stability of the gas flow in the entire collecting system.

[0050] The stacking design of the first collecting soft felt 4331 in the thickness direction, together with the avoidance hole 4332, significantly optimizes the collection path of the gaseous components. The multi-layered stacked collecting soft felt 42 increases the contact area with the gaseous components. As the gaseous components rise in the bottom collecting cavity 433, they need to pass through each layer of soft felt in sequence. This gives the tiny particles and gas molecules more opportunities to be adsorbed or intercepted. The gaseous components that are not collected by the first collecting soft felt 4331 will flow to the through hole 4421 and enter the top collecting cavity 441.

[0051] According to some embodiments of the present application, in the silicon carbide collection device 100, the diameter of the clearance holes 4332 of a plurality of first collection felts 4331 decreases near the isolation plate 442.

[0052] When excess gaseous components are transferred from the bottom collection chamber 433 to the top collection chamber 441, the diameter of the clearance hole 4332 gradually decreases from bottom to top, which will regulate the flow rate of the gaseous components. According to the principle of fluid mechanics, when the flow rate of the gaseous components is constant, the smaller the cross-sectional area of ​​the channel will increase the gas flow rate. Therefore, as the gaseous components pass through the clearance holes 4332 of each layer of first collecting felt 4331, the closer they are to the partition plate 442, the faster their flow rate. In the bottom collecting chamber 433, the gaseous components first diffuse at a relatively slow speed between the multiple layers of stacked first collecting felt 4331. At this time, the tiny particles and gas molecules have sufficient time to contact the felt surface and be adsorbed or intercepted. When the gaseous components approach the partition plate 442, the flow rate increases as they pass through the clearance holes 4332 with gradually decreasing diameters. They can quickly pass through the through holes 4421 into the top collecting chamber 441, avoiding the formation of eddies or accumulation in the narrow space between the bottom collecting chamber 433 and the partition plate 442. This ensures that the gaseous components have sufficient contact time with the collecting felt 42 and that the gas can be transported efficiently, thereby improving the overall collection efficiency.

[0053] According to some embodiments of the present application, a collection device 100 for silicon carbide is provided in a top collection cavity 441, wherein a plurality of second collection soft felts 4422 are provided, the plurality of second collection soft felts 4422 are constructed to be stacked in the thickness direction, at least one second collection soft felt 4422 is provided on the top of a partition plate 442, and the second collection soft felt 4422 is constructed to be annular and avoids the through hole 4421.

[0054] After the gaseous components are initially collected by the first collecting felt 4331 in the bottom collecting chamber 433, they enter the top collecting chamber 441 through the through-hole 4421 of the isolation plate 442. At this time, the multiple stacked second collecting felts 4422 can perform secondary collection. Although the bottom collecting chamber 433 has intercepted most impurities, a small number of tiny particles and gas molecules may still escape. The multiple layers of second collecting felts 4422 increase the contact area with the gaseous components, allowing these residual components to have a chance to fully contact the felts again when passing through the top collecting chamber 441, and be adsorbed or intercepted. For example, some impurity particles with extremely small particle sizes that are not captured in the bottom collecting chamber 433 will be effectively intercepted by the second collecting felts 4422 in the top collecting chamber 441, thereby greatly improving the overall collection efficiency of excess gaseous components and ensuring that the gas discharged from the collecting device 100 is as pure as possible.

[0055] It should also be noted that, since the top collecting chamber 441 is the uppermost structure of the entire device, the temperature of the top plate of the top collecting chamber 441 is relatively lower than that of other locations. The top plate of the top collecting chamber 441 provides the necessary conditions for the crystallization of excess gaseous components flowing into the chamber, thus causing crystallization to occur on the lower surface of the top plate.

[0056] According to some embodiments of this application, the silicon carbide collection device 100, the main body 1, the support sleeve 3, and the collection part 4 are all constructed of graphite.

[0057] The silicon carbide crystal growth process requires a high-temperature environment. Graphite, with its extremely high melting point and excellent thermal stability, can withstand the high temperatures generated by the collecting device 100 during operation. Graphite components maintain stable physical morphology and mechanical strength even at high temperatures, ensuring the main body 1 can continuously and stably contain raw materials, thus improving the reliability of the collecting device 100 under high-temperature conditions. The gaseous components generated during silicon carbide sublimation may contain chemically active substances. Graphite, with its good chemical stability, is not easily chemically reacted with these gaseous components at high temperatures, nor is it corroded by them. The main body 1, support sleeve 3, and collection part 4 can be in long-term contact with the gas phase components without being damaged, ensuring the service life of the device. At the same time, graphite has good thermal conductivity and can uniformly conduct heat inside the collection device 100. In the process of silicon carbide crystal growth, the uniformity of the thermal field is crucial to the crystal quality. The main body 1, support sleeve 3, and collection part 4 are made of graphite components, which helps to transfer heat in the device quickly and evenly, avoid local overheating or overcooling, facilitate the stable transmission of gas phase components in the device, ensure the stability and consistency of the silicon carbide crystal growth process, and improve the crystal growth quality.

[0058] According to some embodiments of this application, the height of the main body 1 of the silicon carbide collection device 100 is L1, the height of the support sleeve 3 is L2, and the following conditions are met: 45% ≤ L2 / L1 ≤ 70%.

[0059] Understandably, the main body 1 is the area where silicon carbide raw material 5 is placed and sublimated, generating a large amount of heat. The support sleeve 3, as the transition connecting the main body 1 and the collection section 4, has its height in ratio to the height of the main body 1, affecting the heat transfer process. When 45% ≤ L2 / L1 ≤ 70%, the heat generated by the main body 1 can be transferred to the support sleeve 3 and surrounding areas in a relatively reasonable manner. If the L2 / L1 ratio is too small, the support sleeve 3 is relatively short, and the heat from the main body 1 will be too concentrated in the bottom area, resulting in an unreasonable temperature gradient within the crystal growth furnace, which is detrimental to uniform crystal growth. If the L2 / L1 ratio is too large, the support sleeve 3 is too long, increasing the heat transfer distance and causing increased temperature field inhomogeneity. Within a suitable ratio range, heat can be transferred in a balanced manner between the main body 1 and the support sleeve 3, resulting in a more uniform temperature distribution within the crystal growth furnace and providing a stable temperature environment for silicon carbide crystal growth.

[0060] In some embodiments of this application, the thickness of the sidewall of the support sleeve 3 and the sidewall of the collection part 4 is less than 5 mm. When the gaseous components are transported in the support sleeve 3 and the collection part 4, the thin-wall structure can make the temperature on both sides of the sidewall quickly become uniform, reducing the local temperature gradient distortion caused by the large temperature difference between the sidewalls. If the sidewall is too thick, the high temperature on the side close to the gaseous components is difficult to be quickly conducted to the outside, which will form a significant temperature difference inside the sidewall, thereby interfering with the uniformity of the overall temperature field inside the device. The thin-wall design of less than 5 mm can effectively reduce this temperature difference, maintain the stability of the temperature gradient inside the device, and provide a more ideal thermal environment for silicon carbide crystal growth.

[0061] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0062] In the description of this application, "first feature" and "second feature" may include one or more of the features.

[0063] In the description of this application, "multiple" means two or more.

[0064] In the description of this application, the first feature being "above" or "below" the second feature may include the first and second features being in direct contact, or it may include the first and second features not being in direct contact but being in contact through another feature between them.

[0065] In the description of this application, the terms "above," "over," and "on top" for the first feature and the second feature include the first feature being directly above or diagonally above the second feature, or simply indicate that the first feature is at a higher horizontal level than the second feature.

[0066] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0067] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A collection device (100) for silicon carbide, characterized in that, include: The main body (1) has a main cavity (11) that opens to the top, and the main cavity (11) is adapted to contain silicon carbide raw material (5); Cover (2), the cover (2) is disposed on the top of the main body (1), the edge of the cover (2) is sealed to the main body (1), and a vent (21) communicating with the main cavity (11) is formed on the cover (2); A support sleeve (3) is fitted onto the top of the cover (2). A gas cavity (31) is formed inside the support sleeve (3). The gas cavity (31) is connected to the main cavity (11) through the vent (21). Collection section (4) is located on the top of the support sleeve (3). A collection chamber (41) communicating with the gas chamber (31) is formed in the collection section (4). Multiple layers of collection soft felt (42) are provided in the collection chamber (41).

2. The silicon carbide collection device (100) according to claim 1, characterized in that, At least a portion of the cover (2) protrudes from the top of the body (1) and has an external thread on its outer periphery. The support sleeve (3) is fitted around the outer periphery of the cover (2). The inner wall of the support sleeve (3) has an internal thread and is sealed with the outer periphery thread of the cover (2).

3. The collecting device (100) for silicon carbide according to claim 1, characterized in that, The collection unit (4) includes: A fitting sleeve (43) is provided at the top of the support sleeve (3). The bottom of the fitting sleeve (43) forms a first sleeve portion (431) for fitting and connecting with the support sleeve (3). The top of the fitting sleeve (43) forms an annular wall (432) with a diameter larger than the first sleeve portion (431). The annular wall (432) defines a bottom collection cavity (433). An extension sleeve (44) is disposed on the top of the mating sleeve (43). A top collecting cavity (441) is formed on the top of the extension sleeve (44). The top collecting cavity (441) is connected to the bottom collecting cavity (433) and constitutes the collecting cavity (41). The bottom collection chamber (433) and the top collection chamber (441) are respectively provided with the collection soft felt (42).

4. The collecting device (100) for silicon carbide according to claim 3, characterized in that, The annular wall (432) is formed with stepped segments connected sequentially in the height direction, wherein the diameter of the stepped segments near the bottom is smaller than the diameter near the top.

5. The collecting device (100) for silicon carbide according to claim 3, characterized in that, An isolation plate (442) is provided inside the expansion sleeve (44). The isolation plate (442) separates the top collection cavity (441) and the bottom collection cavity (433). A through hole (4421) is formed at the center of the isolation plate (442) to connect the top collection cavity (441) and the bottom collection cavity (433).

6. The collecting device (100) for silicon carbide according to claim 5, characterized in that, The bottom collection cavity (433) is provided with a first collection soft felt (4331). The first collection soft felt (4331) is constructed as a plurality of stacked in the thickness direction. At least one of the first collection soft felts (4331) is provided with an avoidance hole (4332) to avoid the through hole (4421).

7. The collecting device (100) for silicon carbide according to claim 6, characterized in that, The diameter of the clearance holes (4332) of the plurality of first collecting soft felts (4331) decreases near the position of the isolation plate (442).

8. The collecting device (100) for silicon carbide according to claim 7, characterized in that, The top collection cavity (441) is provided with a plurality of second collection soft felts (4422). The plurality of second collection soft felts (4422) are constructed to be stacked in the thickness direction. At least one second collection soft felt (4422) is disposed on the top of the isolation plate (442). The second collection soft felt (4422) is constructed to be annular and avoids the through hole (4421).

9. The collecting device (100) for silicon carbide according to claim 1, characterized in that, The main body (1), the support sleeve (3), and the collecting part (4) are all constructed of graphite.

10. The silicon carbide collection device (100) according to claim 1, characterized in that, The height of the main body (1) is L1, and the height of the support sleeve (3) is L2, and the following conditions are met: 45% ≤ L2 / L1 ≤ 70%.

Images