High-frequency surgical system without neutral electrode

Abstract

The utility model relates to the technical field of medical instruments, in particular to a high-frequency surgical system without a neutral electrode, which comprises high-frequency surgical equipment, an output electrode and a conductive bearing table, and the conductive bearing table is used for bearing a target surgical object; the high-frequency surgical equipment is connected to the output electrode and an external power interface, and the high-frequency surgical equipment is used for converting a power supply provided by the power interface into high-frequency energy and transmitting the high-frequency energy to a target surgical object through the output electrode; the conductive bearing table is connected with the power interface through the ground and used for receiving high-frequency energy flowing through the target surgical object and transmitting the high-frequency energy to the high-frequency surgical equipment through the power interface to form a loop. Compared with the prior art that an output electrode and a neutral electrode are needed to form a loop, the neutral electrode does not need to be used, and the safety is improved.

Description

High-frequency surgical system without neutral electrode Technical Field

[0001] This utility model relates to the field of medical device technology, and in particular to a high-frequency surgical system without a neutral electrode. Background Technology

[0002] Currently, high-frequency surgical equipment can provide unipolar energy output and bipolar energy output. When providing unipolar energy output, energy is transferred from the high-frequency surgical equipment to the output electrode, passes through human tissue, and is then transferred back to the high-frequency surgical equipment through the neutral electrode, thus forming a circuit to complete the cutting of skin tissue.

[0003] Existing high-frequency surgical equipment requires the use of both output and neutral electrodes. However, if the neutral electrode is not properly positioned, it can easily cause burns to the patient, resulting in low safety. Therefore, how to complete the procedure using only the output electrode is an urgent problem to be solved. Summary of the Invention

[0004] The main purpose of this invention is to provide a high-frequency surgical system without a neutral electrode, which aims to solve the technical problem in the prior art that patients are easily burned when the neutral electrode is not placed in the right position, resulting in low safety.

[0005] To achieve the above objectives, this utility model proposes a high-frequency surgical system without a neutral electrode. The system includes: a high-frequency surgical device, an output electrode, and a conductive support platform, wherein the conductive support platform is used to support the target surgical object.

[0006] The high-frequency surgical device is connected to the output electrode and an external power interface. The high-frequency surgical device is used to convert the power provided by the power interface into high-frequency energy and transmit the high-frequency energy to the target surgical object through the output electrode.

[0007] The conductive support platform is connected to the power interface via the ground. The conductive support platform is used to receive the high-frequency energy flowing through the target surgical object and transmit the high-frequency energy to the high-frequency surgical equipment through the power interface to form a circuit.

[0008] In one embodiment, the high-frequency surgical device includes: a conversion module and a processing module;

[0009] The processing module is connected to the conversion module, and the processing module is used to output a modulated signal to the conversion module;

[0010] The conversion module is connected to the power interface and the output electrode. The conversion module is used to receive the modulation signal, which is used to convert the power supplied by the power interface into high-frequency energy and transmit the high-frequency energy to the output electrode.

[0011] In one embodiment, the high-frequency surgical device further includes: a resonant module;

[0012] The resonant module is connected to the conversion module and the output electrode. The resonant module is used to filter the high-frequency energy output by the conversion module and transmit the filtered high-frequency energy to the output electrode.

[0013] In one embodiment, the high-frequency surgical device further includes: a feedback module;

[0014] The feedback module is connected to the resonant module, the output electrode, and the processing module. The feedback module is used to acquire the filtered high-frequency energy to obtain current and voltage signals, and transmit the current and voltage signals to the processing module.

[0015] The processing module is further configured to convert the current signal and the voltage signal into the modulation signal, and transmit the modulation signal to the conversion module.

[0016] In one embodiment, the conversion module includes: a boost unit, a buck unit, and an inverter unit;

[0017] The boost unit is connected to the power interface, the buck unit and the processing module. The boost unit is used to boost the power supplied by the power interface through the modulation signal and transmit the boosted power to the buck unit.

[0018] The step-down unit is connected to the processing module and the inverter unit. The step-down unit is used to step down the boosted power supply through the modulation signal and transmit the stepped-down power supply to the inverter unit.

[0019] The inverter unit is connected to the processing module and the resonant module. The inverter unit is used to invert the stepped-down power supply through the modulation signal to obtain the high-frequency energy and transmit the high-frequency energy to the resonant module.

[0020] In one embodiment, the boost unit includes: a receiving subunit, an amplifying subunit, and a rectifying subunit;

[0021] The receiving subunit is connected to the power interface, the amplification subunit, and the processing module. The receiving subunit is used to convert the power supplied by the power interface through the modulation signal and transmit the converted power to the amplification subunit.

[0022] The amplification subunit is connected to the rectifier subunit. The amplification subunit is used to amplify the converted power supply and transmit the amplified power supply to the rectifier subunit.

[0023] The rectifier subunit is connected to the step-down unit. The rectifier subunit is used to rectify the amplified power supply and transmit the rectified power supply to the step-down unit.

[0024] In one embodiment, the step-down unit includes: a first MOSFET, a second MOSFET, a first to a fourth resistor, a first inductor, and a first to a fourth capacitor;

[0025] The drain of the first MOSFET is connected to the boost unit and the first terminal of the first resistor. The second terminal of the first resistor is connected to the first terminal of the first capacitor. The gate of the first MOSFET is connected to the processing module and the first terminal of the second resistor. The source of the first MOSFET is connected to the second terminal of the second resistor, the drain of the second MOSFET, the second terminal of the first capacitor, the first terminal of the first inductor, and the first terminal of the third resistor. The gate of the second MOSFET is connected to the processing module and the first terminal of the fourth resistor. The source of the second MOSFET is connected to the second terminal of the fourth resistor and the second terminal of the second capacitor. The second terminal of the second capacitor is also grounded. The second terminal of the third resistor is connected to the second terminal of the second capacitor. The second terminal of the first inductor is connected to the first terminal of the third capacitor, the first terminal of the fourth capacitor, and the inverter unit. The second terminal of the third capacitor is connected to the second terminal of the fourth capacitor. The second terminal of the fourth capacitor is also grounded.

[0026] In one embodiment, the inverter unit includes: a third MOSFET to a sixth MOSFET, a fifth resistor to an eighth resistor, and a first transformer;

[0027] The drain of the third MOS transistor is connected to the buck converter. The gate of the third MOS transistor is connected to the first terminal of the fifth resistor and the processing module. The source of the third MOS transistor is connected to the second terminal of the fifth resistor, the drain of the fourth MOS transistor, and the first input terminal of the first transformer. The gate of the fourth MOS transistor is connected to the first terminal of the sixth resistor and the processing module. The source of the fourth MOS transistor is grounded and also connected to the second terminal of the sixth resistor. The drain of the fifth MOS transistor is connected to the buck converter. The gate of the fifth MOS transistor is connected to the first terminal of the seventh resistor and the processing module. The source of the fifth MOS transistor is connected to the second terminal of the seventh resistor, the drain of the sixth MOS transistor, and the second input terminal of the first transformer. The gate of the sixth MOS transistor is connected to the first terminal of the eighth resistor and the processing module. The source of the sixth MOS transistor is grounded and also connected to the second terminal of the eighth resistor. The first output terminal and the second output terminal of the first transformer are both connected to the resonant module.

[0028] In one embodiment, the resonant module includes: a second inductor to a fourth inductor, a fifth capacitor to a ninth capacitor, and a ninth resistor;

[0029] The first end of the second inductor is connected to the first end of the inverter unit and the first end of the fifth capacitor. The second end of the fifth capacitor is connected to the second end of the inverter unit and the second end of the sixth capacitor. The second end of the second inductor is connected to the first end of the sixth capacitor and the first end of the third inductor. The second end of the third inductor is connected to the first end of the seventh capacitor and the first end of the fourth inductor. The second end of the seventh capacitor is connected to the second end of the sixth capacitor and the second end of the eighth capacitor. The second end of the fourth inductor is connected to the first end of the eighth capacitor, the first end of the ninth resistor, the first end of the ninth capacitor, and the feedback module. The second end of the ninth resistor is connected to the second end of the eighth capacitor and the feedback module. The second end of the ninth capacitor is connected to the output electrode.

[0030] In one embodiment, the frequency of the high-frequency energy is not less than 4MHz.

[0031] This invention proposes a high-frequency surgical system without a neutral electrode. The system includes a high-frequency surgical device, an output electrode, and a conductive support platform. The conductive support platform carries the target surgical object. The high-frequency surgical device is connected to the output electrode and an external power interface. The high-frequency surgical device converts the power supplied by the power interface into high-frequency energy and transmits the high-frequency energy to the target surgical object through the output electrode. The conductive support platform is connected to the power interface via the ground. The conductive support platform receives the high-frequency energy flowing through the target surgical object and transmits the high-frequency energy to the high-frequency surgical device through the power interface to form a circuit. Because this invention can output high-frequency energy to the target surgical object through the output electrode, and the conductive support platform transmits the high-frequency energy flowing through the target surgical object to the power interface via the ground, and then from the power interface to the high-frequency surgical device, a circuit is formed. Compared to existing systems that require an output electrode and a neutral electrode to form a circuit, this invention eliminates the need for a neutral electrode, improving safety. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0033] Figure 1 is a schematic diagram of the structure of the first embodiment of the high-frequency surgical system without neutral electrode proposed in this utility model;

[0034] Figure 2 is a structural block diagram of the high-frequency surgical device in the second embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0035] Figure 3 is a circuit diagram of the step-down unit in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0036] Figure 4 is a circuit diagram of the inverter unit in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0037] Figure 5 is a circuit diagram of the resonant module in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0038] Figure 6 is a circuit diagram of the boost unit in the fourth embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0039] Explanation of icon numbers:

[0040]

[0041] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0042] It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0043] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0044] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in this utility model embodiment are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0045] Furthermore, the use of terms such as "first" and "second" in this utility model is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. If the combination of technical solutions is contradictory or impossible to implement, the user should consider such a combination of technical solutions to be non-existent and not within the scope of protection claimed by this utility model.

[0046] It should be noted that currently, high-frequency surgical equipment can provide both unipolar and bipolar energy output. When providing unipolar energy output, energy is transferred from the high-frequency surgical equipment to the output electrode, passes through the human tissue, and then returns to the high-frequency surgical equipment through the neutral electrode, thus forming a circuit to complete the cutting of the skin tissue.

[0047] Existing high-frequency surgical equipment requires the use of both output and neutral electrodes. However, if the neutral electrode is not properly positioned, it can easily cause burns to the patient, resulting in low safety. Therefore, how to complete the procedure using only the output electrode is an urgent problem to be solved.

[0048] To address the aforementioned technical issues, this embodiment provides a high-frequency surgical system without a neutral electrode. In this system, high-frequency energy is output to the target surgical object via an output electrode. The conductive carrier stage transmits the high-frequency energy flowing through the target surgical object to the power interface via the ground, and then from the power interface to the high-frequency surgical equipment, thus forming a circuit. Compared to existing systems that require both an output electrode and a neutral electrode to form a circuit, this embodiment eliminates the need for a neutral electrode, improving safety.

[0049] For ease of understanding, the high-frequency surgical system without a neutral electrode provided in the embodiments of this application will be described in detail below with reference to Figures 1 to 6.

[0050] Referring to Figure 1, which is a schematic diagram of the structure of the first embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model.

[0051] As shown in Figure 1, in this embodiment, the system includes: a high-frequency surgical device 1, an output electrode 2, and a conductive support platform 3, wherein the conductive support platform 3 is used to support the target surgical object 4.

[0052] It is understood that the aforementioned high-frequency surgical device 1 can be any device used to provide high-frequency energy to the output electrode 2. The output electrode 2 can be an electrode that acts as the positive pole in the circuit to output high-frequency energy. In this embodiment, the output electrode 2 can be consistent with the conventional type, and this embodiment will not elaborate further. Furthermore, in this embodiment, the aforementioned high-frequency surgical device 1 can be provided with an interface, into which the output electrode 2 can be inserted to receive the high-frequency energy generated by the high-frequency surgical device 1. However, it should be emphasized that since this embodiment does not require a neutral electrode, the high-frequency surgical device 1 in this embodiment may not need to be provided with a neutral electrode interface. Of course, it can also be provided, but without connecting a neutral electrode.

[0053] It should be understood that the aforementioned conductive support platform 3 can be any conductive component used to support the target surgical object 4. The conductive support platform 3 may contain conductive materials, such as iron. Furthermore, to facilitate the support of the target surgical object 4, as shown in Figure 1, the conductive support platform 3 can be designed as a support platform, comprising two table legs and a tabletop. The table legs are respectively located at both ends of the bottom of the tabletop. Both the table legs and the tabletop are made of conductive materials, with the table legs directly contacting the ground 6 and the top of the tabletop contacting the target surgical object 4. Of course, other forms are also possible, and this embodiment does not limit this.

[0054] The high-frequency surgical device 1 is connected to the output electrode 2 and the external power interface 5. The high-frequency surgical device 1 is used to convert the power provided by the power interface 5 into high-frequency energy and transmit the high-frequency energy to the target surgical object 4 through the output electrode 2.

[0055] The conductive support platform 3 is connected to the power interface 5 via the ground 6. The conductive support platform 3 is used to receive the high-frequency energy flowing through the target surgical object 4 and transmit the high-frequency energy to the high-frequency surgical device 1 through the power interface 5 to form a circuit.

[0056] It should also be noted that the power interface 5 mentioned above can be any interface used to provide power. For example, it can be a socket, etc., and this embodiment does not limit it. Figure 1 shows a socket installed on the wall, and the plug of the high-frequency surgical device 1 is inserted into the socket to receive power.

[0057] It is understood that the target surgical object 4 can be any object requiring surgery, such as the human body, and this embodiment does not impose any limitations on this. This embodiment uses the human body for illustration. That is, in actual use, when the human body lies on the conductive support platform 3, the high-frequency surgical device 1 receives the power output from the power interface 5, converts it into the high-frequency energy required for operation, and then transmits it to the output electrode 2. The output electrode 2 then transmits it to the human body. Since the human body is in direct contact with the conductive support platform 3, the high-frequency energy can be transmitted to the conductive support platform 3. The conductive support platform 3 then transmits the energy through the ground 6 to the negative terminal of the power interface 5, and then through the negative terminal of the plug of the high-frequency surgical device 1 to the high-frequency surgical device 1, thus forming a circuit. This allows the output electrode 2 to output high-frequency energy to act on the target surgical object 4 for cutting, ablation, hemostasis, etc. Compared with the existing method that requires the output electrode 2 and a neutral electrode to form a circuit, this embodiment eliminates the need for a neutral electrode, improving safety.

[0058] Furthermore, considering safety, an insulating anti-slip pad can generally be set on the top of the conductive support platform 3, that is, a person lies on the insulating anti-slip pad. At the same time, the bottom of the conductive support platform 3 may not be in direct contact with the ground 6 (that is, the legs of the conductive support platform 3 may not be made of metal material), which leads to the inability to form a circuit. Therefore, in this embodiment, the frequency of the high-frequency energy is not lower than 4MHz.

[0059] It should be understood that when the frequency of the aforementioned high-frequency energy is not lower than 4MHz, it can be understood as being in a high-frequency state. However, when using the output electrode 2 and the neutral electrode in the traditional way, a low-frequency state is generally used, that is, the frequency of the high-frequency energy is lower than 4MHz. In this embodiment, the high-frequency surgical device 1 can make the output high-frequency energy frequency in a high-frequency state. Even if an insulating anti-slip pad is set on the top of the conductive support platform 3, and the legs of the conductive support platform 3 may not be made of metal, a parasitic capacitance can still be formed between the target surgical object 4 and the conductive support platform 3, and a parasitic capacitance can be formed between the conductive support platform 3 and the ground 6 (i.e., the parasitic capacitance in Figure 1). It is precisely because of these parasitic capacitances that when the target surgical object 4 receives high-frequency energy, due to the high frequency, these parasitic capacitances can form a channel through which the high-frequency energy can still flow into the ground 6, continuing to form a loop.

[0060] In this embodiment, high-frequency energy is output to the target surgical object 4 via the output electrode 2. The conductive carrier platform 3 transmits the high-frequency energy flowing through the target surgical object 4 to the power interface 5 via the ground 6, and then from the power interface 5 to the high-frequency surgical device 1, thus forming a circuit. Compared to existing methods that require both the output electrode 2 and a neutral electrode to form a circuit, this embodiment eliminates the need for a neutral electrode, improving safety.

[0061] Referring to Figure 2, which is a structural block diagram of the high-frequency surgical device 1 in the second embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model embodiment.

[0062] As shown in Figure 2, in this embodiment, in order to enable the high-frequency surgical device 1 to output high-frequency energy, the high-frequency surgical device 1 includes: a conversion module 11 and a processing module 12.

[0063] The processing module 12 is connected to the conversion module 11, and the processing module 12 is used to output a modulated signal to the conversion module 11;

[0064] The conversion module 11 is connected to the power interface 5 and the output electrode 2. The conversion module 11 is used to receive the modulation signal, which is used to convert the power supplied by the power interface 5 into high-frequency energy and transmit the high-frequency energy to the output electrode 2.

[0065] It should be noted that the conversion module 11 can be any module that converts power into high-frequency energy. The processing module 12 can be a module that outputs a modulation signal to cause the conversion module 11 to convert power into high-frequency energy. The modulation signal can be a pulse width modulation (PWM) signal. The processing module 12 can be a module composed of a field-programmable gate array (FPGA), or it can be a module composed of other components that implement the same function. This embodiment uses an FPGA for illustration.

[0066] It should also be noted that since the voltage of the power supply provided by the power interface 5 is generally AC mains power, but may not meet the requirements of the conversion module 11, a transformer can be set in the high-frequency surgical device 1. That is, the power interface 5 transmits the AC mains power to the transformer, the transformer converts it into the required voltage (e.g., 48V), and then transmits it to the conversion module 11 for use.

[0067] In practical use, the FPGA can output a PWM signal to the conversion module 11, which can then use the PWM signal to convert the 48V power supply into high-frequency energy and transmit it to the output electrode 2.

[0068] Meanwhile, to facilitate conversion via PWM signals, the aforementioned 48V power supply can generally be DC. Therefore, in this embodiment, a rectifier can be installed after the transformer to rectify the 48V AC power supply into 48V DC power before transmitting it to the conversion module 11 for use. Furthermore, since the high-frequency energy used at the output electrode 2 is generally AC, the conversion module 11 can convert the 48V DC power supply into AC high-frequency energy.

[0069] Furthermore, in order to filter out unnecessary frequency components in the high-frequency energy, as shown in Figure 2, in this embodiment, the high-frequency surgical device 1 further includes: a resonant module 13;

[0070] The resonant module 13 is connected to the conversion module 11 and the output electrode 2. The resonant module 13 is used to filter the high-frequency energy output by the conversion module 11 and transmit the filtered high-frequency energy to the output electrode 2.

[0071] It is understood that the above-mentioned resonant module 13 may be an LC resonant module 13 consisting of an inductor and a capacitor, or other resonant modules 13 that achieve the same function. This embodiment does not limit this.

[0072] In actual use, after the conversion module 11 converts the power supply into high-frequency energy, it can transmit it to the resonant module 13. The resonant module 13 can filter the energy and transmit the filtered high-frequency energy to the output electrode 2 for use.

[0073] Furthermore, considering that the processing module 12 in this embodiment uses a PWM signal to convert the power supply into high-frequency energy, and the required power of high-frequency energy may be different in different scenarios, in order to make accurate adjustments, the high-frequency surgical device 1 in this embodiment also includes a feedback module 14;

[0074] The feedback module 14 is connected to the resonant module 13, the output electrode 2 and the processing module 12. The feedback module 14 is used to collect the filtered high-frequency energy to obtain current signal and voltage signal, and transmit the current signal and voltage signal to the processing module 12.

[0075] The processing module 12 is further configured to convert the current signal and the voltage signal into the modulation signal, and transmit the modulation signal to the conversion module 11.

[0076] It should be understood that the aforementioned current signal can be a signal corresponding to the current value of high-frequency energy, and the aforementioned voltage signal can be a signal corresponding to the voltage value of high-frequency energy. The aforementioned feedback module 14 may include components for acquiring the current value of high-frequency energy and components for acquiring the voltage value of high-frequency energy, such as current transformers and voltage transformers, etc. Of course, other components with the same function may also be used, and this embodiment does not limit this.

[0077] In practical use, the feedback module 14 can collect the filtered high-frequency energy output by the resonant module 13 and obtain current and voltage signals. Then, the current and voltage signals are transmitted to the processing module 12. The processing module 12 can determine the current and voltage values ​​of the high-frequency energy based on the current and voltage signals, and then adjust the duty cycle of the PWM signal based on the current and voltage values. The adjusted PWM signal is then transmitted to the conversion module 11, so that the conversion module 11 can output high-frequency energy that meets the power requirements of the current scenario.

[0078] It should be emphasized that since adjusting the duty cycle of the PWM signal based on the current and voltage values ​​to adjust the power is existing technology, this embodiment will not describe it in detail. As another implementation, the feedback module 14 can be omitted, and the processing module 12 can directly generate the PWM signal according to the preset duty cycle.

[0079] Furthermore, in order to enable the conversion module 11 to convert power into high-frequency energy, as shown in FIG2, in this embodiment, the conversion module 11 includes: a boost unit 111, a buck unit 112, and an inverter unit 113;

[0080] The boost unit 111 is connected to the power interface 5, the buck unit 112 and the processing module 12. The boost unit 111 is used to boost the power provided by the power interface 5 through the modulation signal and transmit the boosted power to the buck unit 112.

[0081] The step-down unit 112 is connected to the processing module 12 and the inverter unit 113. The step-down unit 112 is used to step down the boosted power supply through the modulation signal and transmit the stepped-down power supply to the inverter unit 113.

[0082] The inverter unit 113 is connected to the processing module 12 and the resonant module 13. The inverter unit 113 is used to invert the stepped-down power supply through the modulation signal to obtain the high-frequency energy and transmit the high-frequency energy to the resonant module 13.

[0083] It should be noted that the boost unit 111 can be any unit that receives PWM signals and boosts the DC power supply, such as a full-bridge boost circuit, etc., and this embodiment does not impose any limitation on it. The buck unit 112 can be any unit that receives PWM signals and bucks the boosted power supply, such as a BUCK circuit, etc., and this embodiment does not impose any limitation on it. The inverter unit 113 can be any unit that receives PWM signals and inverts the bucked power supply to obtain high-frequency energy in the form of AC square waves, such as a full-bridge inverter circuit, etc., and this embodiment does not impose any limitation on it.

[0084] It should be emphasized that, since different units have different functions, the duty cycles of the PWM signals input to the boost unit 111, buck unit 112, and inverter unit 113 may be different, and can be set according to the actual situation. Furthermore, since this embodiment requires the high-frequency energy to have a frequency of no less than 4MHz, the frequency of the PWM signal input to the inverter unit 113 can be no less than 4MHz; that is, the frequency of the high-frequency energy is controlled by the frequency of the PWM signal input to the inverter unit 113.

[0085] In practical use, the boost unit 111 can be connected to the rectifier to receive 48V DC power. Under the action of the received PWM signal (denoted as the first modulation signal), it boosts the 48V DC power to obtain a boosted power supply. The specific boost value can be set according to the actual situation, and this embodiment does not impose any restrictions on it. The boosted power supply can then be transmitted to the buck unit 112. Under the action of the received PWM signal (denoted as the second modulation signal), the buck unit 112 bucks the power supply to a suitable value. The specific bucking value can be set according to the actual situation, and this embodiment does not impose any restrictions on it. The bucked power supply is then transmitted to the inverter unit 113. Under the action of the received PWM signal (denoted as the third modulation signal), the inverter unit 113 inverts the bucked power supply into a square wave with a frequency of not less than 4MHz, and transmits it to the resonant module 13 for filtering.

[0086] Referring to Figure 3, which is a circuit diagram of the step-down unit 112 in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model embodiment.

[0087] To achieve voltage reduction, as shown in Figure 3, in this embodiment, the voltage reduction unit 112 includes: a first MOSFET Q1, a second MOSFET Q2, a first resistor R1 to a fourth resistor R4, a first inductor L1, and a first capacitor C1 to a fourth capacitor C4.

[0088] The drain of the first MOSFET Q1 is connected to the boost unit 111 (i.e., HV in Figure 3) and the first terminal of the first resistor R1. The second terminal of the first resistor R1 is connected to the first terminal of the first capacitor C1. The gate of the first MOSFET Q1 is connected to the processing module 12 (i.e., BUCK_PWM1 in Figure 3) and the first terminal of the second resistor R2. The source of the first MOSFET Q1 is connected to the second terminal of the second resistor R2, the drain of the second MOSFET Q2, the second terminal of the first capacitor C1, the first terminal of the first inductor L1, and the first terminal of the third resistor R3. The gate of the second MOSFET Q2 is connected to the processing module 12 (i.e., BUCK_PWM1 in Figure 3) and the first terminal of the second resistor R3. The first terminal of the first inductor L1 is connected to the first terminal of the first inductor L1, the second terminal of the second inductor C4, and the second terminal of the second capacitor C2. The second terminal of the second capacitor C2 is also grounded. The second terminal of the third resistor R3 is connected to the second terminal of the second capacitor C2. The second terminal of the first inductor L1 is connected to the first terminal of the third capacitor C3, the first terminal of the fourth capacitor C4, and the inverter unit 113 (i.e., BUCK_OUT in Figure 3). The second terminal of the third capacitor C3 is connected to the second terminal of the fourth capacitor C4. The second terminal of the fourth capacitor C4 is also grounded.

[0089] As shown in Figure 3, it should be noted that the circuit used in the step-down unit 112 in this embodiment can be a BUCK step-down circuit. Both the first MOSFET Q1 and the second MOSFET Q2 can be N-channel MOSFETs, and other switching transistors can also be used; this embodiment does not impose any restrictions on this. The first capacitor C1 and the second capacitor C2 can be non-polarized capacitors, while the third capacitor C3 and the fourth capacitor C4 can be polarized capacitors. Furthermore, the positive terminals of both the third capacitor C3 and the fourth capacitor C4 can be connected to the second terminal of the first inductor L1.

[0090] It is important to emphasize that the gates of the first MOSFET Q1 and the second MOSFET Q2 can alternately receive PWM signals (i.e., the second modulation signal mentioned above). In actual use, when the gate of the first MOSFET Q1 receives the PWM signal, the first MOSFET Q1 turns on, and the second MOSFET Q2 turns off. The first MOSFET Q1 can transmit the received boosted power (i.e., HV in Figure 3) to the first inductor L1, the third capacitor C3, and the fourth capacitor C4, charging the first inductor L1. Then, the first MOSFET Q1 turns off. After the gate of the second MOSFET Q2 receives the PWM signal, the second MOSFET Q2 turns on, and the first MOSFET Q1 turns off, allowing the second MOSFET Q2 to freewheel. This completes the step-down process, and the step-down power (i.e., BUCK_OUT in Figure 3) is transmitted to the inverter unit 113.

[0091] Meanwhile, the processing module 12 can control the duty cycle of the modulation signal transmitted to the first MOSFET Q1 and the second MOSFET Q2, thereby adjusting the power of the step-down power supply.

[0092] Furthermore, in order to achieve inversion, refer to Figure 4, which is a circuit diagram of the inverter unit 113 in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model embodiment.

[0093] As shown in Figure 4, in this embodiment, the inverter unit 113 includes: a third MOS transistor Q3 to a sixth MOS transistor Q6, a fifth resistor R5 and an eighth resistor R8, and a first transformer T1;

[0094] The drain of the third MOSFET Q3 is connected to the buck unit 112 (i.e., BUCK_OUT in Figure 4). The gate of the third MOSFET Q3 is connected to the first terminal of the fifth resistor R5 and the processing module 12 (i.e., NP_PWM1 in Figure 4). The source of the third MOSFET Q3 is connected to the second terminal of the fifth resistor R5, the drain of the fourth MOSFET Q4, and the first input terminal of the first transformer T1. The gate of the fourth MOSFET Q4 is connected to the first terminal of the sixth resistor R6 and the processing module 12 (i.e., NP_PWM2 in Figure 4). The source of the fourth MOSFET Q4 is grounded and is also connected to the second terminal of the sixth resistor R6. The drain of the fifth MOSFET Q5 is connected to the buck unit 112 (i.e., BUCK_OUT in Figure 4). The fifth MOS transistor Q5 is connected to the first terminal of the seventh resistor R7 and the processing module 12 (i.e., NP_PWM3 in Figure 4). The source of the fifth MOS transistor Q5 is connected to the second terminal of the seventh resistor R7, the drain of the sixth MOS transistor Q6, and the second input terminal of the first transformer T1. The gate of the sixth MOS transistor Q6 is connected to the first terminal of the eighth resistor R8 and the processing module 12 (i.e., NP_PWM4 in Figure 4). The source of the sixth MOS transistor Q6 is grounded and is also connected to the second terminal of the eighth resistor R8. The first output terminal and the second output terminal of the first transformer T1 are both connected to the resonant module 13 (i.e., NP_OUT1 and NP_OUT2 in Figure 4).

[0095] Understandably, the drains of the third MOSFET Q3 and the fifth MOSFET Q5 can be connected to the second terminal of the first inductor L1. In this embodiment, the third MOSFET Q3 to the sixth MOSFET Q6 can all be N-channel MOSFETs. A full-bridge inverter circuit can be constructed using the third MOSFET Q3 to the sixth MOSFET Q6.

[0096] It should be understood that the first input terminal of the aforementioned transformer can be the first pin of the transformer, the second input terminal of the aforementioned transformer can be the second pin of the transformer, the first output terminal of the aforementioned transformer can be the third pin of the transformer, and the second output terminal of the aforementioned transformer can be the fourth pin of the transformer. The turns ratio of the aforementioned transformer is not limited in this embodiment.

[0097] In practical use, after the third MOSFET Q3 and the fifth MOSFET Q5 receive the stepped-down power supply (i.e., BUCK_OUT in Figure 4), they are inverted using the PWM signals (i.e., the third modulation signal) received by the third MOSFET Q3 to the sixth MOSFET Q6, converting the DC power supply into a square wave power supply. The third MOSFET Q3 and the sixth MOSFET Q6 are turned on together, as are the fourth MOSFET Q4 and the fifth MOSFET Q5. The square wave power supply is then transmitted to the first transformer T1, which outputs high-frequency AC square wave energy and transmits it to the resonant module 13 (i.e., NP_OUT1 and NP_OUT2 in Figure 4).

[0098] Furthermore, in order to achieve resonance, refer to Figure 5, which is a circuit diagram of the resonant module 13 in the third embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model embodiment.

[0099] As shown in Figure 5, in this embodiment, the resonant module 13 includes: a second inductor L2 to a fourth inductor L4, a fifth capacitor C5 to a ninth capacitor C9, and a ninth resistor R9.

[0100] The first end of the second inductor L2 is connected to the first end of the inverter unit 113 (i.e., NP_OUT1 in Figure 5) and the fifth capacitor C5, respectively. The second end of the fifth capacitor C5 is connected to the second end of the inverter unit 113 (i.e., NP_OUT2 in Figure 5) and the sixth capacitor C6, respectively. The second end of the second inductor L2 is connected to the first end of the sixth capacitor C6 and the first end of the third inductor L3, respectively. The second end of the third inductor L3 is connected to the first end of the seventh capacitor C7 and the first end of the fourth inductor L4, respectively. The second end of the seventh capacitor C7 is connected to the second end of the sixth capacitor C6 and the second end of the eighth capacitor C8, respectively. The second end of the fourth inductor C4 is connected to the first end of the eighth capacitor C8, the first end of the ninth resistor R9, the first end of the ninth capacitor C9 and the feedback module 14, respectively. The second end of the ninth resistor R9 is connected to the second end of the eighth capacitor C8 and the feedback module 14, respectively. The second end of the ninth capacitor C9 is connected to the output electrode 2.

[0101] In practical use, an LC resonant circuit can be formed by the second inductor L2 to the fourth inductor L4 and the fifth capacitor C5 to the eighth capacitor C8. The first end of the second inductor L2 can receive the high-frequency energy output by the inverter unit 113 and resonate, filtering the square wave high-frequency energy to form a sinusoidal current signal, which is then transmitted to the output electrode 2 through the second end of the ninth capacitor C9.

[0102] Furthermore, in order to achieve the acquisition of high-frequency energy, as shown in Figure 5, in this embodiment, the above-mentioned feedback module 14 includes a current transformer TI, a voltage transformer TU, a tenth resistor R10, an eleventh resistor R11, and a tenth capacitor C10.

[0103] The first input terminal of the current transformer TI can be connected to the second terminal of the ninth resistor R9. The second input terminal of the current transformer TI can be connected to the first terminal of the tenth capacitor C10 and the second input terminal of the voltage transformer TU. The second terminal of the tenth capacitor C10 is also grounded. The first output terminal of the current transformer TI can be connected to the first terminal of the tenth resistor R10 and the processing module 12 (i.e., FB_I1 in Figure 5) respectively. The second output terminal of the current transformer TI can be connected to the second terminal of the tenth resistor R10. The second terminal of the tenth resistor R10 is also grounded.

[0104] The first input terminal of voltage transformer TU can be connected to the first terminal of the ninth resistor R9. The second input terminal of voltage transformer TU can be connected to the second input terminal of current transformer TI. The first output terminal of voltage transformer TU can be connected to the first terminal of the eleventh resistor R11, and the first terminal of the eleventh resistor R11 is also grounded. The second output terminal of voltage transformer TU can be connected to the second terminal of the eleventh resistor R11, and the second terminal of the eleventh resistor R11 is also connected to the processing module 12 (i.e., FB_U1 in Figure 5).

[0105] It should be noted that the first input terminal of a current transformer TI can be its first pin, the second input terminal can be its second pin, the first output terminal can be its third pin, and the second output terminal can be its fourth pin. Similarly, the first input terminal of a voltage transformer TU can be its first pin, the second input terminal can be its second pin, the first output terminal can be its third pin, and the second output terminal can be its fourth pin.

[0106] In practical use, high-frequency energy can be input from the first input terminal of voltage transformer TU, output from the second input terminal of voltage transformer TU to the second input terminal of current transformer TI, and output from the first input terminal of current transformer TI. The current transformer TI can then generate a current signal, which is transmitted from the first output terminal of current transformer TI (i.e., FB_I1 in Figure 5) to processing module 12, so that processing module 12 obtains the current value of the high-frequency energy. Similarly, voltage transformer TU can generate a voltage signal, which is transmitted from the second output terminal of voltage transformer TU (i.e., FB_U1 in Figure 5) to processing module 12, so that processing module 12 obtains the voltage value of the high-frequency energy.

[0107] Referring to Figure 6, which is a circuit diagram of the boost unit 111 in the fourth embodiment of the high-frequency surgical system without a neutral electrode proposed in this utility model embodiment.

[0108] As shown in Figure 6, in this embodiment, the boost unit 111 includes: a receiving subunit 1111, an amplifying subunit 1112, and a rectifying subunit 1113;

[0109] The receiving subunit 1111 is connected to the power interface 5, the amplification subunit 1112 and the processing module 12. The receiving subunit 1111 is used to convert the power provided by the power interface 5 through the modulation signal and transmit the converted power to the amplification subunit 1112.

[0110] The amplification subunit 1112 is connected to the rectifier subunit 1113. The amplification subunit 1112 is used to amplify the converted power supply and transmit the amplified power supply to the rectifier subunit 1113.

[0111] The rectifier subunit 1113 is connected to the step-down unit 112. The rectifier subunit 1113 is used to rectify the amplified power supply and transmit the rectified power supply to the step-down unit 112.

[0112] It should be noted that the receiving subunit 1111 can be a unit that receives PWM signals (i.e., the first modulation signal) and power supplies. The amplification subunit 1112 can be a unit that performs amplification. The rectification subunit 1113 can be a unit that performs rectification.

[0113] In practical use, the receiving subunit 1111 can receive the power supply after rectification by the rectifier and receive the PWM signal. The DC power supply is converted into a square wave power supply through the PWM signal and then transmitted to the amplification subunit 1112. The amplification subunit 1112 amplifies and boosts the square wave power supply and transmits the amplified power supply to the rectifier subunit 1113. The rectifier subunit 1113 rectifies the amplified power supply and outputs high-voltage DC power supply to the buck unit 112.

[0114] Further, continuing to refer to FIG6, the above-mentioned receiving sub-unit 1111 includes: seventh MOS transistors Q7 to tenth MOS transistors Q10, twelfth resistors R12 to twenty-first resistors R21 and eleventh capacitor C11;

[0115] The drain of the seventh MOSFET Q7 is connected to power interface 5 (i.e., 48V in Figure 6). The gate of the seventh MOSFET Q7 is connected to the second terminal of the twelfth resistor R12 and the first terminal of the thirteenth resistor R13. The first terminal of the twelfth resistor R12 is connected to processing module 12 (i.e., OUTC in Figure 6). The source of the seventh MOSFET Q7 is connected to the second terminal of the thirteenth resistor R13 and the drain of the eighth MOSFET Q8. The gate of the eighth MOSFET Q8 is connected to the second terminal of the fourteenth resistor R14 and the first terminal of the fifteenth resistor R15. The first terminal of the fourteenth resistor R14 is connected to processing module 12 (i.e., OUTD in Figure 6). The second terminal of the fifteenth resistor R15 is grounded. The source of the eighth MOSFET Q8 is connected to the second terminal of the twentieth resistor R20 and the first terminal of the twenty-first resistor R21. The first terminal of the twentieth resistor R20 is connected to the eleventh capacitor C11. The first terminal is connected, the second terminal of the eleventh capacitor C11 is grounded, the second terminal of the twenty-first resistor R21 is grounded, the drain of the ninth MOSFET Q9 is connected to the power interface 5 (i.e., 48V in Figure 6), the gate of the ninth MOSFET Q9 is connected to the second terminal of the sixteenth resistor R16 and the first terminal of the seventeenth resistor R17, the first terminal of the sixteenth resistor R16 is connected to the processing module 12 (i.e., OUTA in Figure 6), the source of the ninth MOSFET Q9 is connected to the second terminal of the seventeenth resistor R17 and the drain of the tenth MOSFET Q10, the gate of the tenth MOSFET Q10 is connected to the second terminal of the eighteenth resistor R18 and the first terminal of the nineteenth resistor R19, the first terminal of the eighteenth resistor R18 is connected to the processing module 12 (i.e., OUTB in Figure 6), the second terminal of the nineteenth resistor R19 is grounded, and the source of the tenth MOSFET Q10 is connected to the second terminal of the twentieth resistor R20.

[0116] It is understood that the aforementioned seventh MOSFET Q7 to tenth MOSFET Q10 can be N-channel MOSFETs. The boost unit 111 in this embodiment can be a phase-shifted full-bridge network circuit. Specifically, the gates of the aforementioned ninth MOSFET Q9 and the eighth MOSFET Q8 together receive the PWM signal (i.e., the aforementioned first modulation signal), and the gates of the aforementioned seventh MOSFET Q7 and the tenth MOSFET Q10 together receive the PWM signal.

[0117] In practical use, the drain of the seventh MOSFET Q7 and the drain of the ninth MOSFET Q9 can be specifically connected to the rectifier to receive 48V power, and convert it into a square wave power through the PWM signal, and then transmit it to the amplification subunit 1112 through the source of the ninth MOSFET Q9 and the drain of the tenth MOSFET Q10.

[0118] Furthermore, the aforementioned amplification subunit 1112 includes: a second transformer T2 and a fifth inductor L5;

[0119] The first input terminal of the second transformer T2 is connected to the source of the ninth MOS transistor Q9. The second input terminal of the second transformer T2 is connected to the first terminal of the fifth inductor L5. The second terminal of the fifth inductor L5 is connected to the processing module 12 (i.e., SW in Figure 6). The first, second, third, and fourth output terminals of the second transformer T2 are all connected to the rectifier subunit 1113.

[0120] It should be understood that the first input terminal of the second transformer T2 can be the first pin of the second transformer T2, the second input terminal of the second transformer T2 can be the second pin of the second transformer T2, the first output terminal of the second transformer T2 can be the third pin of the second transformer T2, the second output terminal of the second transformer T2 can be the fourth pin of the second transformer T2, the third output terminal of the second transformer T2 can be the fifth pin of the second transformer T2, and the fourth output terminal of the second transformer T2 can be the sixth pin of the second transformer T2. Furthermore, the first and second output terminals of the second transformer T2 constitute one set of outputs, and the third and fourth output terminals of the second transformer T2 constitute another set of outputs.

[0121] It should be noted that the function of connecting the second end of the fifth inductor L5 to the processing module 12 can be to provide a reference point.

[0122] In practical use, the first input terminal of the second transformer T2 can receive square wave power, amplify it, and transmit the amplified power to the rectifier subunit 1113 through the first output terminal of the second transformer T2 to the fourth output terminal of the second transformer T2.

[0123] Furthermore, the aforementioned rectifier sub-unit 1113 includes: a 22nd resistor R22, a 23rd resistor R23, 12th capacitors C12 to 17th capacitors C17, a 1st diode D1 to 8th diode D8, a 6th inductor L6, and a 7th inductor L7.

[0124] The first end of the 22nd resistor R22 is connected to the first output terminal of the second transformer T2, the first end of the 12th capacitor C12, the anode of the first diode D1, and the cathode of the second diode D2. The second end of the 22nd resistor R22 is connected to the first end of the 12th capacitor C12. The second end of the 12th capacitor C12 is connected to the second output terminal of the second transformer T2, the anode of the third diode D3, and the cathode of the fourth diode D4. The cathode of the first diode D1 is connected to the first end of the sixth inductor L6 and the cathode of the third diode D3. The anode of the second diode D2 is connected to the anode of the fourth diode D4. The second end of the sixth inductor L6 is connected to the first end of the 13th capacitor C13, the first end of the 14th capacitor C14, and the drain of the first MOSFET Q1 (i.e., HV in Figure 6). The second end of the 13th capacitor C13 is connected to the anode of the fourth diode D4 and the second end of the 14th capacitor C14. The second end of the 14th capacitor C14 is also grounded. The first end of the 23rd resistor R23 is connected to the third output terminal of the second transformer T2, the first end of the 15th capacitor C15, the anode of the fifth diode D5, and the cathode of the sixth diode D6. The second end of the 23rd resistor R23 is connected to the first end of the 15th capacitor C15. The second end of the 15th capacitor C15 is connected to the fourth output terminal of the second transformer T2, the anode of the seventh diode D7, and the cathode of the eighth diode D8. The cathode of the fifth diode D5 is connected to the first end of the seventh inductor L7 and the cathode of the seventh diode D7. The anode of the sixth diode D6 is connected to the anode of the eighth diode D8. The second end of the seventh inductor L7 is connected to the first end of the 16th capacitor C16, the first end of the 17th capacitor C17, and the drain of the first MOSFET Q1 (i.e., HV in Figure 6). The second end of the 16th capacitor C16 is connected to the anode of the eighth diode D8 and the second end of the 17th capacitor C17. The second end of the 17th capacitor C17 is also grounded.

[0125] It is understandable that the thirteenth capacitor C13 to the sixteenth capacitor C16 can all be electrolytic capacitors, and the positive terminals of the thirteenth capacitor C13 and the fourteenth capacitor C14 can be connected to the second terminal of the sixth inductor L6, and the positive terminals of the sixteenth capacitor C16 and the seventeenth capacitor C17 can be connected to the second terminal of the seventh inductor L7.

[0126] In actual use, the first and second output terminals of the second transformer T2 output a set of amplified power supplies to the rectifier subunit 1113. The third and fourth output terminals of the second transformer T2 output another set of amplified power supplies to the rectifier subunit 1113. The first set of amplified power supplies is rectified by the first diode D1 to the fourth diode D4, and the second set of amplified power supplies is rectified by the fifth diode D5 to the eighth diode D8. The rectified power supplies are then transmitted to the first MOSFET Q1 (i.e., HV in Figure 6).

[0127] The above are merely preferred embodiments of this utility model and do not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A high-frequency surgical system without a neutral electrode, characterized in that, The system includes: a high-frequency surgical device, an output electrode, and a conductive support platform. The conductive support platform is used to support the target surgical object. The high-frequency surgical device is connected to the output electrode and an external power interface. The high-frequency surgical device is used to convert the power provided by the power interface into high-frequency energy and transmit the high-frequency energy to the target surgical object through the output electrode. The conductive support platform is connected to the power interface via the ground. The conductive support platform is used to receive the high-frequency energy flowing through the target surgical object and transmit the high-frequency energy to the high-frequency surgical device through the power interface to form a circuit.

2. The system as described in claim 1, characterized in that, The high-frequency surgical device includes: a conversion module and a processing module; the processing module is connected to the conversion module and is used to output a modulation signal to the conversion module; the conversion module is connected to the power interface and the output electrode and is used to receive the modulation signal, the modulation signal being used to convert the power supplied by the power interface into high-frequency energy and transmit the high-frequency energy to the output electrode.

3. The system as described in claim 2, characterized in that, The high-frequency surgical device further includes a resonant module; the resonant module is connected to the conversion module and the output electrode, and the resonant module is used to filter the high-frequency energy output by the conversion module and transmit the filtered high-frequency energy to the output electrode.

4. The system as described in claim 3, characterized in that, The high-frequency surgical device further includes a feedback module; the feedback module is connected to the resonant module, the output electrode and the processing module, the feedback module is used to collect the filtered high-frequency energy to obtain current signal and voltage signal, and transmit the current signal and voltage signal to the processing module; the processing module is also used to convert the current signal and voltage signal into the modulation signal, and transmit the modulation signal to the conversion module.

5. The system as described in claim 4, characterized in that, The conversion module includes a boost unit, a buck unit, and an inverter unit. The boost unit is connected to the power interface, the buck unit, and the processing module. The boost unit is used to boost the power supplied by the power interface through the modulation signal and transmit the boosted power to the buck unit. The buck unit is connected to the processing module and the inverter unit. The buck unit is used to buck the boosted power through the modulation signal and transmit the bucked power to the inverter unit. The inverter unit is connected to the processing module and the resonant module. The inverter unit is used to invert the bucked power through the modulation signal to obtain the high-frequency energy and transmit the high-frequency energy to the resonant module.

6. The system as described in claim 5, characterized in that, The boost unit includes a receiving subunit, an amplifying subunit, and a rectifying subunit. The receiving subunit is connected to the power interface, the amplifying subunit, and the processing module. The receiving subunit is used to convert the power supplied by the power interface through the modulation signal and transmit the converted power to the amplifying subunit. The amplifying subunit is connected to the rectifying subunit and is used to amplify the converted power and transmit the amplified power to the rectifying subunit. The rectifying subunit is connected to the buck unit and is used to rectify the amplified power and transmit the rectified power to the buck unit.

7. The system as described in claim 5, characterized in that, The step-down unit includes: a first MOSFET, a second MOSFET, a first to a fourth resistor, a first inductor, and a first to a fourth capacitor; the drain of the first MOSFET is connected to the boost unit and the first end of the first resistor, the second end of the first resistor is connected to the first end of the first capacitor, the gate of the first MOSFET is connected to the processing module and the first end of the second resistor, the source of the first MOSFET is connected to the second end of the second resistor, the drain of the second MOSFET, the second end of the first capacitor, the first end of the first inductor, and the first end of the third resistor, the gate of the second MOSFET is connected to the processing module and the first end of the fourth resistor, the source of the second MOSFET is connected to the second end of the fourth resistor and the second end of the second capacitor, the second end of the second capacitor is also grounded, the second end of the third resistor is connected to the second end of the second capacitor, the second end of the first inductor is connected to the first end of the third capacitor, the first end of the fourth capacitor, and the inverter unit, the second end of the third capacitor is connected to the second end of the fourth capacitor, and the second end of the fourth capacitor is also grounded.

8. The system as described in claim 5, characterized in that, The inverter unit includes: a third to a sixth MOS transistor, a fifth resistor, an eighth resistor, and a first transformer; the drain of the third MOS transistor is connected to the buck converter; the gate of the third MOS transistor is connected to the first terminal of the fifth resistor and the processing module; the source of the third MOS transistor is connected to the second terminal of the fifth resistor, the drain of the fourth MOS transistor, and the first input terminal of the first transformer; the gate of the fourth MOS transistor is connected to the first terminal of the sixth resistor and the processing module; the source of the fourth MOS transistor is grounded; and the source of the fourth MOS transistor is also connected to the second terminal of the sixth resistor. The drain of the fifth MOS transistor is connected to the step-down unit. The gate of the fifth MOS transistor is connected to the first terminal of the seventh resistor and the processing module. The source of the fifth MOS transistor is connected to the second terminal of the seventh resistor, the drain of the sixth MOS transistor, and the second input terminal of the first transformer. The gate of the sixth MOS transistor is connected to the first terminal of the eighth resistor and the processing module. The source of the sixth MOS transistor is grounded and is also connected to the second terminal of the eighth resistor. The first output terminal and the second output terminal of the first transformer are both connected to the resonant module.

9. The system as described in claim 5, characterized in that, The resonant module includes: a second inductor to a fourth inductor, a fifth capacitor to a ninth capacitor, and a ninth resistor; the first end of the second inductor is connected to the first end of the inverter unit and the fifth capacitor respectively; the second end of the fifth capacitor is connected to the second end of the inverter unit and the sixth capacitor respectively; the second end of the second inductor is connected to the first end of the sixth capacitor and the first end of the third inductor respectively; the second end of the third inductor is connected to the first end of the seventh capacitor and the first end of the fourth inductor respectively; the second end of the seventh capacitor is connected to the second end of the sixth capacitor and the second end of the eighth capacitor respectively; the second end of the fourth inductor is connected to the first end of the eighth capacitor, the first end of the ninth resistor, the first end of the ninth capacitor, and the feedback module respectively; the second end of the ninth resistor is connected to the second end of the eighth capacitor and the feedback module respectively; and the second end of the ninth capacitor is connected to the output electrode.

10. The system as described in any one of claims 1 to 9, characterized in that, The frequency of the high-frequency energy is not less than 4MHz.

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