A magnetron annealing crystallization furnace apparatus

Abstract

The utility model relates to material heat treatment and molecular recrystallization equipment technical field, concretely relates to a kind of magnetron annealing crystallization furnace equipment, heating device, temperature control device, cooling device and annealing crystallization device are sequentially arranged to form assembly line structure, and heating device, temperature control device, cooling device and annealing crystallization device are all through same conveying mechanism;Resistance heating mechanism is installed to the rear side of heating rack;Multiple groups of heat preservation tunnels are installed on temperature control rack, heat preservation tunnel is set to the outside of conveying mechanism, and adjustable temperature air blower is installed to the upper portion of heat preservation tunnel;Multiple groups of fan box frames are installed on cooling rack, and cooling fan is installed on fan box frame;Two groups of magnetic field activated recrystallization machines are installed on annealing crystallization rack, and array type plane magnetic field is equipped in magnetic field activated recrystallization machine;The utility model integrates annealing area, crystallization area, transition area, automatically transmits piece by rack conveyor, realizes single equipment continuous process, reduces piece pollution, and yield is improved by 15%.

Description

Technical Field

[0001] This utility model relates to the technical field of material heat treatment and molecular recrystallization equipment, specifically to a magnetically controlled annealing crystallization furnace. Background Technology

[0002] Perovskite solar cells (PSCs) have become a promising and rapidly developing type of photovoltaic cell due to their low cost and high conversion efficiency. The high efficiency of PSCs is closely related to the quality of the photosensitive layer, and a high-quality light-absorbing layer depends on the crystal growth conditions. Annealing is an essential and crucial step in the formation of high-quality crystals; it evaporates the solvent and drives the crystallization of the thin film.

[0003] Heating materials to a certain temperature and holding them for a certain time is a heat treatment method that has been widely used in various types of solar cells. Heat treatment eliminates residual stress and internal defects, and adjusts the microstructure of the material. During the crystallization process of perovskite crystals, the annealing method, duration, and temperature have a significant impact on the crystallization quality and crystal structure of perovskite thin films.

[0004] The formation of perovskite thin films mainly involves two important stages: nucleation and growth. These two stages are relatively independent processes. Therefore, by changing parameters and rationally adjusting these two independent stages, the growth of the film can be appropriately controlled. During the growth of perovskite, the uniformity and coverage of the film are directly related to these two steps. Perovskite annealing is a multi-objective process aimed at improving the overall performance and lifespan of perovskite solar cells by removing residual solvents, stabilizing the crystal structure, improving electron mobility, eliminating impurities, adjusting crystallinity and crystal morphology, improving stability and durability, and promoting film formation and growth.

[0005] The annealing and crystallization furnace for perovskite modules primarily performs a recrystallization process on the module carrier. Generally, equipment only alters the film temperature during annealing to achieve material molecular recombination. This results in insufficient temperature control; traditional PID algorithms exhibit lag in response during phase transition stages (such as amorphous silicon crystallization), leading to overcooling / overheating. Structural limitations exist, with most furnaces employing a single heating zone, preventing rapid switching between annealing (slow cooling) and crystallization (high temperature). High energy consumption is also a concern, with intermittent operation causing over 30% heat loss, leading to instability in the crystal quality and structure of the perovskite film. Therefore, there is an urgent need to design an integrated annealing and crystallization equipment for semiconductor, photovoltaic, or specialty glass manufacturing to address the problems of insufficient temperature control, limited structural functionality, and high energy consumption in existing annealing and crystallization furnaces. Utility Model Content

[0006] In view of the problems existing in the prior art, the purpose of this utility model is to provide a magnetic control annealing crystallization furnace device.

[0007] The technical solution adopted by this utility model to solve its technical problem is: a magnetic control annealing crystallization furnace equipment, including a heating device, a temperature control device, a cooling device and an annealing crystallization device, wherein the heating device, the temperature control device, the cooling device and the annealing crystallization device are arranged in sequence to form a production line structure, and the heating device, the temperature control device, the cooling device and the annealing crystallization device all pass through the same conveying mechanism.

[0008] The heating device is equipped with a heating frame and a resistance heating mechanism, with the resistance heating mechanism installed on the rear side of the heating frame.

[0009] The temperature control device is equipped with a temperature control frame and an insulation tunnel. Multiple sets of insulation tunnels are installed on the temperature control frame. The insulation tunnels are located on the outside of the conveying mechanism, and an adjustable temperature hot air fan is installed on the top of the insulation tunnel.

[0010] The cooling device is equipped with a cooling frame and a cooling fan. Multiple fan housings are installed on the cooling frame, and cooling fans are installed on the fan housings.

[0011] The annealing crystallization apparatus is equipped with an annealing crystallization frame and a magnetic field activated recrystallizer. Two sets of magnetic field activated recrystallizers are installed on the annealing crystallization frame, and an array-type planar magnetic field is installed inside the magnetic field activated recrystallizer.

[0012] Specifically, the rear side of the heating frame is hinged to a sealing cover, and three sets of resistance heating mechanisms are installed at the lower part of the sealing cover.

[0013] Specifically, a heat insulation sealing plate is installed on the heating frame, and the heat insulation sealing plate is located below the conveying mechanism. Smoke exhaust boxes are provided on both sides of the heating frame, and the smoke exhaust boxes are located on both sides of the sealing cover. A through hole for the conveying mechanism to pass through is provided in the middle of the smoke exhaust box, and a heat circulation waste discharge hole is provided at the top of the smoke exhaust box. A heating control box is provided at the front of one side of the smoke exhaust box.

[0014] Specifically, the rear side of the temperature control frame is hinged to the sealing cover two. The temperature control frame has constant temperature circulation chambers on both sides. The constant temperature circulation chambers are located on both sides of the sealing cover two. The middle of the constant temperature circulation chamber has a through hole for the conveying mechanism to pass through. The upper part of the constant temperature circulation chamber has an exhaust hole. The conveying mechanism passes through the constant temperature circulation chambers on both sides and the insulation tunnel in the middle. The front of the constant temperature circulation chamber on one side is equipped with a temperature control box.

[0015] Specifically, the cooling frame is equipped with a cooling circulation box, which has a through hole for the conveying mechanism to pass through. The conveying mechanism passes through the fan frame and the cooling circulation box, and an electrical control cabinet and a cooling control box are installed on the outside of the fan frame.

[0016] Specifically, the arrayed planar magnetic field is installed on both sides of the conveying mechanism to form a magnetic field.

[0017] Specifically, an annealing crystallization testing machine is installed on the annealing crystallization frame, and the conveying mechanism passes through the magnetic field to activate the recrystallizer and the annealing crystallization testing machine.

[0018] This utility model has the following beneficial effects:

[0019] The magnetic control annealing crystallization furnace equipment designed in this utility model integrates the annealing zone (slow cooling), the crystallization zone (high temperature), and the transition zone. It automatically transfers wafers via a frame conveyor belt, realizing continuous process in a single unit, reducing wafer transfer contamination, and improving yield by ≥15%.

[0020] The magnetic control annealing and crystallization furnace designed in this utility model features a modular heating design, independent temperature control in different zones, and supports online switching between annealing and crystallization processes; a dynamic airflow management system reduces lattice distortion caused by thermal stress; and the equipment has comprehensive functions. Attached Figure Description

[0021] Figure 1 This is a structural diagram of a magnetically controlled annealing crystallization furnace. Figure 1 .

[0022] Figure 2 This is a structural diagram of a magnetically controlled annealing crystallization furnace. Figure 2 .

[0023] Figure 3 This is the front view of the magnetically controlled annealing crystallization furnace equipment.

[0024] Figure 4 This is a top view of the magnetically controlled annealing crystallization furnace equipment.

[0025] Figure 5 This is a rear view of the magnetron annealing crystallization furnace equipment.

[0026] Figure 6 This is a right view of the magnetically controlled annealing crystallization furnace equipment.

[0027] Figure 7 This is a left view of the magnetically controlled annealing crystallization furnace equipment.

[0028] In the diagram: 1-Heating device, 1.1-Heating frame, 1.2-Resistance heating mechanism, 1.3-Conveying mechanism, 1.4-Insulation sealing plate, 1.5-Heating control box, 1.6-Heat circulation waste discharge hole, 1.7-Sealing cover one;

[0029] 2-Temperature control device, 2.1-Temperature control frame, 2.2-Insulated tunnel, 2.3-Adjustable temperature hot air blower, 2.4-Constant temperature circulation chamber, 2.5-Temperature control box, 2.6-Sealed cover II;

[0030] 3-Cooling device, 3.1-Cooling frame, 3.2-Cooling fan, 3.3-Electrical control cabinet, 3.4-Cooling control box, 3.5-Cooling rotary box;

[0031] 4- Annealing crystallization apparatus, 4.1- Annealing crystallization frame, 4.2- Magnetic field activated recrystallizer, 4.3- Arrayed planar magnetic field, 4.4- Annealing crystallization detector. Detailed Implementation

[0032] The technical solutions of the present utility model will be described in further detail below with reference to the accompanying drawings of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0033] like Figures 1-7 As shown, a magnetically controlled annealing crystallization furnace includes a heating device 1, a temperature control device 2, a cooling device 3, and an annealing crystallization device 4. The heating device 1, temperature control device 2, cooling device 3, and annealing crystallization device 4 are arranged sequentially to form a production line structure. The feed inlet is on the left side of the heating device 1, and the discharge outlet is on the right side of the annealing crystallization device 4. The heating device 1, temperature control device 2, cooling device 3, and annealing crystallization device 4 all pass through the same conveying mechanism 1.3. The conveying mechanism 1.3 adopts a frame-type conveyor belt.

[0034] The heating device 1 is equipped with a heating frame 1.1, a resistance heating mechanism 1.2, a heat insulation sealing plate 1.4, a heating control box 1.5, a heat circulation exhaust hole 1.6, and a sealing cover 1.7. The resistance heating mechanism 1.2 is installed on the rear side of the heating frame 1.1. The sealing cover 1.7 is hinged to the rear side of the heating frame 1.1. Three sets of resistance heating mechanisms 1.2 are installed on the lower part of the sealing cover 1.7.

[0035] A heat insulation sealing plate 1.4 is installed on the heating frame 1.1. The heat insulation sealing plate 1.4 is located below the conveying mechanism 1.3. Smoke boxes are provided on both sides of the heating frame 1.1. The smoke boxes are located on both sides of the sealing cover 1.7. A through hole for the conveying mechanism 1.3 to pass through is provided in the middle of the smoke box. A heat circulation waste discharge hole 1.6 is provided at the top of the smoke box. A heating control box 1.5 is provided at the front of one side of the smoke box.

[0036] The temperature control device 2 is equipped with a temperature control frame 2.1, an insulation tunnel 2.2, an adjustable temperature hot air blower 2.3, a constant temperature circulation chamber 2.4, a temperature control box 2.5, and a sealing cover 2.6. Four sets of insulation tunnels 2.2 are installed on the temperature control frame 2.1. The insulation tunnels 2.2 are located outside the conveying mechanism 1.3. The adjustable temperature hot air blower 2.3 is installed on the upper part of the insulation tunnels 2.2.

[0037] The rear side of the temperature control frame 2.1 is hinged to the sealing cover 2.6. The temperature control frame 2.1 has constant temperature circulation chambers 2.4 on both sides. The constant temperature circulation chambers 2.4 are located on both sides of the sealing cover 2.6. The constant temperature circulation chambers 2.4 have a through hole in the middle for the conveying mechanism 1.3 to pass through. The upper part of the constant temperature circulation chambers 2.4 has an exhaust hole. The conveying mechanism 1.3 passes through the constant temperature circulation chambers 2.4 on both sides and the insulation tunnel 2.2 in the middle. The temperature control box 2.5 is located at the front of the constant temperature circulation chamber 2.4 on one side.

[0038] The cooling device 3 is equipped with a cooling frame 3.1, a cooling fan 3.2, an electrical control cabinet 3.3, a cooling control box 3.4, and a cooling circulation box 3.5. Four sets of fan boxes are installed on the cooling frame 3.1, and the cooling fans 3.2 are installed on the fan boxes.

[0039] The cooling frame 3.1 is equipped with a cooling circulation box 3.5. The cooling circulation box 3.5 has a discharge port through which the conveying mechanism 1.3 passes. The conveying mechanism 1.3 passes through the fan box frame and the cooling circulation box 3.5. The electrical control cabinet 3.3 and the cooling control box 3.4 are installed on the outside of the fan box frame.

[0040] The annealing crystallization apparatus 4 is equipped with an annealing crystallization frame 4.1, a magnetic field activated recrystallizer 4.2, an array-type planar magnetic field 4.3, and an annealing crystallization detector 4.4. Two sets of magnetic field activated recrystallizers 4.2 are installed on the annealing crystallization frame 4.1, and an array-type planar magnetic field 4.3 is installed inside the magnetic field activated recrystallizer 4.2.

[0041] An array-type planar magnetic field 4.3 is installed on both sides of the conveying mechanism 1.3 to form a magnetic field.

[0042] Annealing crystallization tester 4.4 is installed on annealing crystallization frame 4.1. Conveying mechanism 1.3 passes through magnetic field to activate recrystallizer 4.2 and annealing crystallization tester 4.4.

[0043] In this invention, the component enters the annealing crystallization furnace, first passing through the heating chamber of the heating device 1 to heat the component, and then sequentially passing through the heat preservation chamber of the temperature control device 2 and the cooling chamber of the cooling device 3. In the annealing crystallization device 4 at the rear of the cooling chamber, the component undergoes crystallization changes in its internal structure through the array-type planar magnetic field 4.3, and then the component exits the crystallization furnace.

[0044] The device of this utility model is generally divided into the following parts:

[0045] 1. The resistance heating chamber uses the principle of physical heating to rapidly heat up the perovskite module.

[0046] 2. The CNC insulation cavity uses the principle of physical insulation to keep the components warm in this location.

[0047] 3. Cooling chamber: Uses physical cooling methods to quickly cool the components.

[0048] 4. Arrayed magnetic fields, which regulate the evolution of the microstructure of materials through the physical effects of magnetic fields.

[0049] 5. Track-type transport: Components move on a transport track.

[0050] 6. Process inspection: Test the thin film material after annealing and magnetron recrystallization to determine its yield.

[0051] Molecular orientation and crystal structure regulation. Paramagnetic and ferromagnetic molecules: Molecules with magnetic anisotropy (such as complexes containing metal ions) will align along the direction of the magnetic field in a magnetic field, forming an ordered crystal structure. For example, ferroelectric materials may form crystal domains with specific orientations in a magnetic field.

[0052] Diamagnetic molecules: Strong magnetic fields (such as those above 10T generated by superconducting magnets) can induce orientation effects on diamagnetic molecules (such as water and organic matter). For example, water molecules form a more ordered ice crystal structure in a strong magnetic field, leading to a change in the morphology of the ice crystals.

[0053] Influence of Crystallization Kinetics. Nucleation and Growth Rate: Magnetic fields can alter the formation rate of nucleation sites by affecting the diffusion rate of ions in the solution or local supersaturation. For example, when a magnetic field suppresses solution convection, it can reduce disturbance at nucleation sites and promote the growth of large single crystals. Magnetohydrodynamic Effects: Alternating magnetic fields can induce eddies, affecting heat conduction and convection in the solution, thereby regulating the crystallization process.

[0054] Polymorphism and Crystal Morphology Control. Polymorphism Selection: Magnetic fields can induce the growth of specific polymorphs. For example, different polymorphs of drug molecules (such as ritonavir) may be selectively formed due to magnetic field intervention, which is crucial for drug bioavailability. Crystal Morphology Regulation: Magnetic fields can alter the anisotropic growth of crystals, leading to different morphologies such as needle-like, platy, or cubic shapes. For example, calcium carbonate is more likely to form calcite than aragonite in a magnetic field.

[0055] Biomolecular crystallization: During protein crystallization, a magnetic field can reduce precipitation interference caused by gravity and improve crystal quality (similar to the effect of microgravity in space). Functional material preparation: Anisotropic materials (such as piezoelectric ceramics and superconducting materials) can be directionally crystallized using a magnetic field to obtain specific properties, such as optimizing magnetic domain alignment to improve efficiency.

[0056] Magnetic field strength requirements: Significant effects typically require a high-intensity magnetic field (>1T), resulting in high equipment costs. Molecular sensitivity: Nonpolar or weakly magnetic molecules may respond weakly, requiring the use of other control methods (such as electric fields and temperature).

[0057] Magnetic fields offer novel avenues for materials design and drug development by modulating molecular orientation, crystallization kinetics, and crystal structure. Future research could explore the synergistic effects of magnetic fields with other external fields (such as electric fields and ultrasound) to expand their applications in industrial crystallization.

[0058] The main purposes of perovskite annealing are as follows.

[0059] 1. Removal of residual solvents: In the fabrication process of perovskite solar cells, solvents are typically added to improve the solubility and crystallinity of the material. Annealing can remove these residual solvents, thereby improving the performance and stability of the cell.

[0060] 2. Stabilized Crystal Structure: Perovskite materials possess various crystal structures, and different structures can affect battery performance. During annealing, high-temperature treatment is beneficial for crystal rearrangement and stabilization, thereby improving battery performance and stability.

[0061] 3. Improve electron mobility: Electron mobility affects the photoelectric efficiency of a battery. During annealing, as the temperature increases, electron mobility increases, thereby improving battery efficiency.

[0062] 4. Eliminating impurities and improving crystal quality: Annealing can eliminate impurities in perovskite solar cells, especially impurities other than those in the oxide layer, thereby improving their crystal quality.

[0063] 5. Adjusting crystallinity and crystal morphology: Annealing can improve photoelectric conversion efficiency by adjusting crystallinity and crystal morphology.

[0064] 6. Improved stability and durability: Annealing treatment helps improve the stability and durability of perovskite solar cells, extending their service life.

[0065] 7. Promotes film formation and growth: Annealing treatment helps the formation of perovskite films, and the growth of films can be reasonably controlled through the two stages of nucleation and growth.

[0066] This utility model is not limited to the above-described embodiments. Anyone should know that any structural changes made under the guidance of this utility model, and any technical solutions that are the same as or similar to this utility model, fall within the protection scope of this utility model.

[0067] The technologies, shapes, and structures not described in detail in this utility model are all known technologies.

[0068] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0069] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A magnetically controlled annealing and crystallization furnace, characterized in that, It includes a heating device, a temperature control device, a cooling device, and an annealing and crystallization device, which are arranged sequentially to form a production line structure. The heating device, temperature control device, cooling device, and annealing and crystallization device all pass through the same conveying mechanism. The heating device is equipped with a heating frame and a resistance heating mechanism, with the resistance heating mechanism installed on the rear side of the heating frame. The temperature control device is equipped with a temperature control frame and an insulation tunnel. Multiple sets of insulation tunnels are installed on the temperature control frame. The insulation tunnels are located on the outside of the conveying mechanism, and an adjustable temperature hot air fan is installed on the top of the insulation tunnel. The cooling device is equipped with a cooling frame and a cooling fan. Multiple fan housings are installed on the cooling frame, and cooling fans are installed on the fan housings. The annealing crystallization apparatus is equipped with an annealing crystallization frame and a magnetic field activated recrystallizer. Two sets of magnetic field activated recrystallizers are installed on the annealing crystallization frame, and an array-type planar magnetic field is installed inside the magnetic field activated recrystallizer.

2. The magnetically controlled annealing and crystallization furnace equipment according to claim 1, characterized in that, The rear side of the heating frame is hinged to a sealing cover, and three sets of resistance heating mechanisms are installed at the lower part of the sealing cover.

3. The magnetically controlled annealing and crystallization furnace equipment according to claim 2, characterized in that, The heating frame is equipped with a heat insulation sealing plate located below the conveying mechanism. Smoke exhaust boxes are provided on both sides of the heating frame. The smoke exhaust boxes are located on both sides of the sealing cover. A through hole for the conveying mechanism to pass through is provided in the middle of the smoke exhaust box. A heat circulation exhaust hole is provided at the top of the smoke exhaust box. A heating control box is provided at the front of one side of the smoke exhaust box.

4. The magnetically controlled annealing and crystallization furnace equipment according to claim 1, characterized in that, The rear side of the temperature control frame is hinged to the sealing cover two. The temperature control frame has constant temperature circulation chambers on both sides. The constant temperature circulation chambers are located on both sides of the sealing cover two. The middle of the constant temperature circulation chamber has a through hole for the conveying mechanism to pass through. The upper part of the constant temperature circulation chamber has an exhaust hole. The conveying mechanism passes through the constant temperature circulation chambers on both sides and the insulation tunnel in the middle. The front of the constant temperature circulation chamber on one side is equipped with a temperature control box.

5. The magnetically controlled annealing and crystallization furnace equipment according to claim 1, characterized in that, The cooling frame is equipped with a cooling circulation box, which has a through hole for the conveying mechanism to pass through. The conveying mechanism passes through the fan frame and the cooling circulation box. An electrical control cabinet and a cooling control box are installed on the outside of the fan frame.

6. The magnetically controlled annealing and crystallization furnace equipment according to claim 1, characterized in that, The array-type planar magnetic field is installed on both sides of the conveying mechanism to form a magnetic field.

7. The magnetically controlled annealing and crystallization furnace equipment according to claim 1, characterized in that, An annealing crystallization testing machine is installed on the annealing crystallization frame, and the conveying mechanism passes through the magnetic field to activate the recrystallizer and the annealing crystallization testing machine.

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