Siliciated test device and test procedure for metal-free thermocouple in one plane of a CMOS stack

Abstract

Device for testing at least one siliciated thermopile, comprising a first thermopile (TP1) and a second thermopile (TP2) and a first control element (K1), wherein the first thermopile (TP1) comprises at least one thermocouple and wherein the first thermopile (TP1) is metal-layer-free and wherein electrical connections in the first thermopile (TP1) are realized by siliciation and wherein the first thermopile (TP1) is electrically connected by siliciation to a first connection pad (TP1P1) of the first thermopile (TP1) and wherein the first thermopile (TP1) is electrically connected by siliciation to a second connection pad (TP1P2) of the first thermopile (TP1) and wherein the second thermopile (TP2) comprises at least one thermocouple and wherein the second thermopile (TP2) is metal-layer-free and wherein electrical connections in the second thermopile (TP2) are realized by siliciation and wherein the second thermopile (TP2) is electrically connected by siliciation to a firstThe terminal pad (TP2P1) of the second thermopile (TP2) is electrically connected, and the second thermopile (TP2) is electrically connected to a second terminal pad (TP2P2) of the second thermopile (TP2) by siliconization, and the first control element (K1) comprises a series connection of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1), and a third diode (K1D3) of the first control element (K1), and a fourth diode (K1D4) of the first control element (K1), and the first diode (K1D1) of the first control element (K1), and the second diode (K1D2) of the first control element (K1), and the third diode (K1D3) of the first control element (K1), and the fourth diode (K1D4) of the first control element (K1) are pn diodes or pin diodes are made of polysilicon and the first diode (K1D1) of the first control element (K1) is electrically connected to a first silicide coating (K1S1) of the first control element (K1).first terminal pad (K1P1) of the first control element (K1) is connected and the fourth diode (K1D4) of the first control element (K1) is electrically connected to a second terminal pad (K1P2) of the first control element (K1) by means of a second siliconization (K1S2) of the first control element (K1).

Description

PreambleThe invention is directed to the realization of metal layer-free thermocouples and metal layer-free thermopiles in standard CMOS processes. The thermocouples and thermopiles according to the invention can be used in infrared sensors for person detection or in Halios systems for gesture recognition. Furthermore, use as a thermoelectric generator or use as a cooling element is possible.General IntroductionThe use of thermopiles in sensitive thermoelectric infrared sensors for person or movement detection is an alternative to the pyroelectric sensors often used for this purpose. The use of thermopiles is particularly advantageous when the least possible cost-effective production in a CMOS process is possible. A high degree of functional design freedom is also advantageous for this purpose.Prior ArtInfrared sensors for detecting long-wave infrared radiation (4<λ<14 μm) on the basis of the thermoelectric effect, also known as the Seebeck effect, are often manufactured using CMOS technology. For thermocouple fabrication, a material available in the CMOS process with high Seebeck coefficient, low thermal conductivity and low electrical resistance is required. To increase the thermoelectric signal, CMOS-typical materials with negative and positive Seebeck coefficients, respectively, are combined in a thermocouple. Possible combinations are, for example, polysilicon / aluminum, heavily p-doped polysilicon / aluminum, n-doped polysilicon / heavily p-doped silicon, or preferably n-doped polysilicon / p-doped polysilicon. In FIGS. 1 to 4, typical constructions of prior art thermocouples (SdT) manufactured in a CMOS process are shown.According to the prior art (SdT), the production of an n-doped polysilicon / p-doped polysilicon thermocouple is realized in the CMOS process by two separate polysilicon components having different polysilicon levels and at least two different wiring levels. The necessary electrically conductive connection of the thermocouples to a thermocouple is realized with aluminum, aluminum-silicon alloy or aluminum-copper alloy.Disadvantages of the described polysilicon thermocouples, which are realized by a plurality of polysilicon and metallization levels, are the necessary thick membrane layers of the integrated thermocouples and thick CMOS stacks resulting therefrom. This also limits the functional design freedom in the CMOS stack. In addition, a high thermal mass and a high thermal conductivity result. This has a negative effect on the sensitivity of the infrared sensor.The connection of metal and semiconductor in a CMOS standard process by silicided with titanium atoms is known from the prior art (SdT). Patent specification DE 10 2014 013 482 B4 is mentioned as an example. US 2014 / 0 015 089 A1 further discloses the realization of thermopiles using silicided polysilicon. US 2003 / 0 147 449 A1 discloses an integrated sensor with a self-test of a thermopile. DE 601 17 929 T2 discloses a thermopile with an additional diode arrangement for temperature determination.In CMOS processes, it is also possible to silicide with other metal atoms, for example with nickel atoms or tungsten atoms or cobalt atoms. For purposes of this disclosure, silicides and similar compounds having a metal-like conductivity in which valence and conduction bands do not overlap at room temperature, but at least at the absolute zero point, are not considered metals. Thus, when "non-metallic" is mentioned, the presence of silicides or similar compounds does not lead to the loss of the "non-metallic" property.The object is to provide a method for performing a processThe proposal is therefore based on the object of electrically conductively connecting thermocouples made of heavily n-doped and heavily p-doped polysilicon to form a thermocouple, instead of using an additional metal plane, by silicided the polysilicon.It is a further object of the present invention to connect metal-layer-free thermocouples to one another in an electrically conductive manner by silicided formation of the polysilicon to form a thermopile.It is a further object of the present invention to improve the layout of the inventive metal-layer-free thermopile with regard to the packing density of the thermocouples and to improve the ease of production as possible.It is a further object of the invention to use at least one metal-layer-free thermopile according to the invention as a thermoelectric generator for providing electrical energy from thermal energy.It is a further object of the invention to use at least one metal-layer-free thermopile according to the invention as a cooling element, for example for electronic circuits.It is a further object of the present invention to provide a test possibility for at least one inventive thermopile by using a metal-layer-free heating element and a further metal-layer-free thermoelectric sensor on the same substrate.This object is achieved with a device according to claims 1 and 3 and a method according to claims 7 and 8.It is a further object of the present invention to use metal-sheet-free thermopiles capable of self-testing in motor vehicles.It is a further object of the present invention to detect persons or animals in the interior of motor vehicles by means of at least one metal-sheet-free thermopile according to the invention and to determine further properties of the persons or animals, for example elevated temperature, alive or deceased.It is a further object of the present invention to operate an array of metal-sheet-free thermopiles according to the invention as an infrared camera. Such an arrangement could be used in motor vehicles, for example, to provide additional information in order to improve the image of a rear view camera in the case of darkness.It is a further object of the present invention to use at least one inventive metal layer-free thermopile as receiver in a Halios device in a Halios system for gesture recognition.It is a further object of the present invention to realize the metal-layer-free thermopile without a membrane as a cantilever.It is a further object of the invention to realize a silicided sensor for electromagnetic radiation on a membrane.Solution of the ProblemAccording to the invention, it has been recognized that the silicide formation of polycrystalline silicon-also referred to below as polysilicon-with preferably titanium for electrical connection in the prior art (SdT) has not previously been used for the connection of thermocouples in CMOS technology. According to the invention, it has also been recognized that this principle can likewise be applied to materials other than polycrystalline silicon.In a thermopile of the type described at the beginning, the object is achieved according to the proposal in that thermocouples made of n- and p-doped polysilicon are electrically connected to one another to form a metal-layer-free thermocouple by silicided the polysilicon with titanium. Instead of titanium atoms, other metal atoms such as tungsten or cobalt or nickel atoms can also be used.The thermocouples are preferably located in the same uninterrupted polysilicon level of the CMOS stack. The polysilicon layer is preferably between 200 nm and 300 nm thick. A part of this is silicided as described. The thickness of the silicide formation is preferably between 40 nm and 80 nm.A p-doping can be effected, for example, by implanting boron ions into the polysilicon. An n-doping can be effected, for example, by implanting phosphorus or arsenic ions into the polysilicon. The p-doped polysilicon has a positive Seebeck coefficient. The n-type polysilicon has a negative Seebeck coefficient. The electrically active thermocouple forms at the contact point between the n- and p-doped polysilicon.The thermocouples realized in this way can likewise be electrically connected by silicided the polysilicon with titanium or with tungsten or with cobalt or with nickel or another suitable metal to form a metal-layer-free, so-called thermopile. In addition, further electrical connections to other components or further thermopiles can be realized by silicided the polysilicon.Thermopiles are also referred to in the German language field as thermopiles or thermopiles. According to a common idea, a thermopile is an electrical component that converts thermal energy into electrical energy. It consists of several thermocouples that are thermally connected in parallel and electrically in series, whereby the very low thermoelectric voltages are added to a measurable total thermoelectric voltage.In the following, the detailed structure of a thermocouple described above is first explained with reference to FIG. 5. A simplified illustration of the structure of the proposed thermocouple is shown in FIG. 6 and in FIG. 7. In the thermocouple shown in FIG. 6, different Seebeck coefficients of the two thermocouples result from differently doped polysilicon. In the thermocouple shown in FIG. 7, the different Seebeck coefficients of polysilicon and silicided are decisive for the function of the respective thermocouple.The proposed connection of a plurality of thermocouples to form a thermopile is then explained with reference to FIG. 8. The arrangement of the individual thermocouples to form a thermopile can be designed differently. An arrangement which is particularly advantageous with regard to the packing density of the thermocouples and to the production process is illustrated with reference to FIG. 10.A proposed thermocouple is constructed, as shown in the cross section in FIG. 5, in a common first polysilicon layer (PS 1). The polysilicon layer (PS1) is located on a first membrane (MEM1). The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) may contain absorbers and / or absorber layers for infrared radiation. The first membrane (MEM1) is located on a first substrate (SUB1). The first substrate (SUB1) is preferably made of doped or non-doped polysilicon. On the first polysilicon layer (PS1), a first insulation layer (I1) is located. Non-doped material is also referred to below as non-doped material.The structure described below is achieved by etching the wafer from the front side. However, it is equally possible to realize an analog construction by etching the wafer from the back side.A first trench (G1) having a width (BG1) of the first trench (G1) and a length (LG1) of the first trench (G1) and a height (HG1) of the first trench (G1) from the surface of the first insulation layer (I1) is introduced into the first substrate (SUB1) at a first distance (d1) from a first left side surface (LSF1) of the described stack, consisting of the first substrate (SUB1) and the first membrane (MEM1) and the first polysilicon layer (PS1) and the first insulation layer (I1), and at a third distance (d3) from a first rear side surface (HSF1) of the described stack.A second trench (G 2) having a width (BG 2) of the second trench (G 2) and a length (LG 2) of the second trench (G 2) and a height (HG 2) of the second trench (G 2) from the surface of the first insulation layer (I 1) is introduced into the first substrate (SUB 1) at a second distance (d 2) from a first right side surface (RSF 1) of the described stack and at a fourth distance (d 4) from the first rear side surface (HSF 1) of the described stack.Preferably, the first distance (d1) is equal to the second distance (d2). Preferably, the third distance (d3) is equal to the fourth distance (d4). Preferably, the width (BG 1) of the first trench (G 1) is equal to the width (BG 2) of the second trench (G 2). Preferably, the length (LG1) of the first trench (G1) is equal to the length (LG2) of the second trench (G2). Preferably, the height (HG1) of the first trench (G1) is equal to the height (HG2) of the second trench (G2).A substrate-free first cavity (C1) is introduced between the first trench (G1) and the second trench (G2) below the first membrane (MEM1).The substrate-free first cavity (C1) serves for thermal insulation. For this purpose, the first cavity (C1) must necessarily be filled or vacuumed (=air empty) with a material having poor thermal conductivity, such as air or with gas.The first polysilicon layer (PS 1) comprises a first thermocouple (TE 1) and a second thermocouple (TE 2) and a second silicide (SI 2) above the first cavity (C 1). The second silicide (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicide (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2). The second silicide formation (SI2) is formed by silicide formation of the polysilicon with suitable metal atoms, preferably with titanium atoms or, for example, with tungsten atoms or with cobalt atoms or with nickel atoms or atoms of another suitable metal.The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type may be an n-doping or a p-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Between the first left side surface (LSF 1) and the first trench (G 1), the first polysilicon layer (PS 1) comprises a first silicide (SI 1). Between the first right side surface (RSF 1) and the second trench (G 2), the first polysilicon layer (PS 1) comprises a third silicide (SI 3). The first silicide (SI1) consists of titanium silicided polysilicon. The third silicide (SI3) consists of titanium silicided polysilicon. Instead of titanium atoms, other metal atoms, such as cobalt and / or tungsten and / or nickel atoms, can also be used. The first silicide (SI1) and the third silicide (SI3) are electrically conductive connection points for further thermocouples or other electronic components made of polysilicon.In comparison with the thermocouples in CMOS technology corresponding to the prior art (SdT), which are shown in FIGS. 1 to 4, a very flat CMOS stack results in the above-described proposed construction. Since the positive and negative Seebeck coefficient thermocouples and the electrically conductive connections are located in the same layer plane of the CMOS stack, more functional design degrees of freedom and a simplified manufacturing process result. The thermal capacitance is lower.FIG. 6 shows a greatly simplified illustration of a possible structure of the proposed thermocouple. This simplified illustration illustrates the arrangement of thermocouples and silicided relative to each other.A nineteenth thermocouple (TE19) is adjacent to a twentieth thermocouple (TE20).The nineteenth thermocouple (TE19) is made of heavily doped polysilicon of a first doping type. The twentieth thermocouple (TE20) is comprised of heavily doped polysilicon of a second doping type. The first doping type may be an n-doping or a p-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.The nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) form a pn junction.A twentieth silicide (SI20) extends from the surface of the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) as far as into the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). However, the twentieth silicide (SI20) does not spatially separate the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). A pn junction remains below the twentieth silicide (SI20), which is still formed by the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20).The twentieth silicide (SI20) consists of polysilicon silicided, for example, by means of titanium atoms. Silicided by means of other metal atoms, such as, for example, tungsten and / or cobalt and / or nickel atoms, is likewise possible.FIG. 7 shows a again greatly simplified illustration of a further possible structure of the proposed thermocouple, in which a silicided action acts as a thermocouple.A twenty-first thermocouple (TE21) is adjacent to a twenty-second thermocouple (TE22). The twenty-first thermocouple (TE21) is of undoped polysilicon or of doped polysilicon. The twenty-second thermocouple (TE22) is of undoped polysilicon or doped polysilicon and comprises a twenty-first silicide (SI21). The twenty-first silicide (SI21) now extends, for example, over the entire surface of the polysilicon of the twenty-second thermocouple (TE22).For the use of the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) comprising the twenty-first silicided (SI21) as thermocouple, the different Seebeck coefficients of the twenty-first thermocouple (TE21) and the twenty-first silicided (SI21) are decisive. Preferably, the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) again form a pn diode at the junction between them. For the formation of such a pn diode, it is a prerequisite that the twenty-first thermocouple (TE21) consists of doped polysilicon of a first conductivity type and that the twenty-second thermocouple (TE22) consists of doped polysilicon of a second conductivity type. For example, the first conductivity type can be an n-doping and the second conductivity type a p-doping.Next, the series connection of four proposed thermocouples to form a thermopile is explained with reference to FIG. 8.A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) through a sixth silicide (SI6).A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) through a seventh silicide (SI7).A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).The second thermocouple (TC 12) of the first thermocouple (TC 1) is electrically connected to the first thermocouple (TC 21) of the second thermocouple (TC 2) via a ninth silicide (SI 9).The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).The first thermocouple (TC 11) of the first thermocouple (TC 1) is electrically connected to a first pad (P 1) through a thirteenth silicide (SI 13).The second thermocouple (TC 52) of the fifth thermocouple (TC 5) is electrically connected to a second pad (P 2) through fourteenth silicide (SI 14).A temperature-dependent voltage (UT) is present between the first connection pad (P 1) and the second connection pad (P 2).The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2), and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first type of doping is illustrated in FIG. 8 by vertically dashed lines. The first doping type may be a p- or an n-doping.The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2), and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first type of doping is illustrated in FIG. 8 by horizontal dashed lines. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.The arrangement of thermocouples shown in FIG. 8 and FIG. 9 has the disadvantage that p-doped thermocouples and n-doped thermocouples are alternately adjacent to each other. The distance between the individual thermocouples is therefore strongly caused by the distances between n-dopings and p-dopings necessary in the production process.An improved arrangement of the thermocouples is therefore proposed and explained with reference to FIG. 10. FIG. 10 shows, by way of example, the improved layout of a series circuit of four thermocouple series circuits to form a thermopile according to the proposal. However, more thermocouple series connections can also be used. A thermocouple series circuit comprises in each case eight thermocouples connected in series. Next, the individual thermocouple series connections are described and then their series connection to form a thermopile, and the layout of the thermopile.The first thermocouple series circuit (S 1) comprises a first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and a second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and a third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and a fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and a fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and a sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and a seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and an eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) A THERMOCOUPLE series circuit (S1) and a first silicide (S1S1) of the first thermocouple series circuit (S1) and a second silicide (S1S2) of the first thermocouple series circuit (S1) and a third silicide (S1S3) of the first thermocouple series circuit (S1) and a fourth silicide (S1S4) of the first thermocouple series circuit (S1) and a fifth silicide (S1S5) of the first thermocouple series circuit (S1) and a sixth silicide (S1S6) of the first thermocouple series circuit (S1) and a seventh silicide (S1S7) of the first thermocouple series circuit (S1).The second thermocouple series circuit (S 2) comprises a first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) and a second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) and a third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) and a fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) and a fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) and a sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) and a seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) and an eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) A THERMOCOUPLE series circuit (S2) and a first silicide (S2S1) of the second thermocouple series circuit (S2) and a second silicide (S2S2) of the second thermocouple series circuit (S2) and a third silicide (S2S3) of the second thermocouple series circuit (S2) and a fourth silicide (S2S4) of the second thermocouple series circuit (S2) and a fifth silicide (S2S5) of the second thermocouple series circuit (S2) and a sixth silicide (S2S6) of the second thermocouple series circuit (S2) and a seventh silicide (S2S7) of the second thermocouple series circuit (S2).The third thermocouple series circuit (S 3) comprises a first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) and a second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) and a third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) and a fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) and a fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) and a sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) and a seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) and an eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) A THERMOCOUPLE series circuit (S3) and a first silicide (S3S1) of the third thermocouple series circuit (S3) and a second silicide (S3S2) of the third thermocouple series circuit (S3) and a third silicide (S3S3) of the third thermocouple series circuit (S3) and a fourth silicide (S3S4) of the third thermocouple series circuit (S3) and a fifth silicide (S3S5) of the third thermocouple series circuit (S3) and a sixth silicide (S3S6) of the third thermocouple series circuit (S3) and a seventh silicide (S3S7) of the third thermocouple series circuit (S3).The fourth thermocouple series circuit (S 4) comprises a first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) and a second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) and a third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) and a fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) and a fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) and a sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) and a seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) and an eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) A THERMOCOUPLE series circuit (S4) and a first silicide (S4S1) of the fourth thermocouple series circuit (S4) and a second silicide (S4S2) of the fourth thermocouple series circuit (S4) and a third silicide (S4S3) of the fourth thermocouple series circuit (S4) and a fourth silicide (S4S4) of the fourth thermocouple series circuit (S4) and a fifth silicide (S4S5) of the fourth thermocouple series circuit (S4) and a sixth silicide (S4S6) of the fourth thermocouple series circuit (S4) and a seventh silicide (S4S7) of the fourth thermocouple series circuit (S4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) is electrically connected to the second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) by the first silicided (S 1S 1) of the first thermocouple series circuit (S 1). The second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) is electrically connected to the third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) by the second silicide (S 1S 2) of the first thermocouple series circuit (S 1). The third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) is electrically connected to the fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) by the third silicide (S 1S 3) of the first thermocouple series circuit (S 1). The fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) is electrically connected to the fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) by the fourth silicide (S 1S 4) of the first thermocouple series circuit (S 1). The fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) is electrically connected to the sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) by the fifth silicide (S 1S 5) of the first thermocouple series circuit (S 1). The sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) is electrically connected to the seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) by the sixth silicide (S 1S 6) of the first thermocouple series circuit (S 1). The seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) is electrically connected to the eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) by the seventh silicide (S 1S 7) of the first thermocouple series circuit (S 1).The first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) is electrically connected to the second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) by the first silicide (S 2S 1) of the second thermocouple series circuit (S 2). The second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) is electrically connected to the third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) by the second silicide (S 2S 2) of the second thermocouple series circuit (S 2). The third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) is electrically connected to the fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) by the third silicide (S 2S 3) of the second thermocouple series circuit (S 2). The fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) is electrically connected to the fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) by the fourth silicide (S 2S 4) of the second thermocouple series circuit (S 2). The fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) is electrically connected to the sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) by the fifth silicide (S 2S 5) of the second thermocouple series circuit (S 2). The sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) is electrically connected to the seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) by the sixth silicide (S 2S 6) of the second thermocouple series circuit (S 2). The seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) is electrically connected to the eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) by the seventh silicide (S 2S 7) of the second thermocouple series circuit (S 2).The first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) is electrically connected to the second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) by the first silicide (S 3S 1) of the third thermocouple series circuit (S 3). The second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) is electrically connected to the third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) by the second silicide (S 3S 2) of the third thermocouple series circuit (S 3). The third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) is electrically connected to the fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) by the third silicide (S 3S 3) of the third thermocouple series circuit (S 3). The fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) is electrically connected to the fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) by the fourth silicide (S 3S 4) of the third thermocouple series circuit (S 3). The fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) is electrically connected to the sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) by the fifth silicide (S 3S 5) of the third thermocouple series circuit (S 3). The sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) is electrically connected to the seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) by the sixth silicide (S 3S 6) of the third thermocouple series circuit (S 3). The seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) is electrically connected to the eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) by the seventh silicide (S 3S 7) of the third thermocouple series circuit (S 3).The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) is electrically connected to the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) by the first silicide (S 4S 1) of the fourth thermocouple series circuit (S 4). The second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) is electrically connected to the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) by the second silicide (S 4S 2) of the fourth thermocouple series circuit (S 4). The third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) is electrically connected to the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) by the third silicide (S 4S 3) of the fourth thermocouple series circuit (S 4). The fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) is electrically connected to the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) through the fourth silicide (S 4S 4) of the fourth thermocouple series circuit (S 4). The fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) is electrically connected to the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) by the fifth silicide (S 4S 5) of the fourth thermocouple series circuit (S 4). The sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) is electrically connected to the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) by the sixth silicide (S 4S 6) of the fourth thermocouple series circuit (S 4). The seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) is electrically connected to the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) by the seventh silicide (S 4S 7) of the fourth thermocouple series circuit (S 4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) is electrically connected to a first connection pad (S 1P 1) of the first thermocouple series circuit (S 1) via fifteenth silicided (SI 15). The eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) is electrically connected to a first connection pad (S 4P 1) of the fourth thermocouple series circuit (S 4) via a nineteenth silicide (SI 19).The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) is electrically connected to the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) via a sixteenth silicide (SI 16). The eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) is electrically connected to the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) via a seventeenth silicide (SI 17). The eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) is electrically connected to the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) via an eighteenth silicide (SI 18).The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3), and the third thermocouple (S3E3) of the third thermocouple series circuit (S3), and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3), and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3), and the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4), and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4), and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4), and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4), are heavily doped polysilicon of a first doping type. The first type of doping is represented in FIG. 10 by a dotted pattern. The first doping type may be a p- or an n-doping.The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3), and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3), and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3), and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3), and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4), and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4), and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4), and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4), are made of heavily doped polysilicon of a second doping type. The second type of doping is represented in Figure 10 by non-patterned stripes. The second doping type is an n-doping when the first doping type is a p-doping. The second doping type is a p-doping when the first doping type is an n-doping.The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) adjoins the first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1).The eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) adjoins the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2).The eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) adjoins the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3).The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) adjoins the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and the second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and the third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and the fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and the fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and the sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and the seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and the eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) form a closed border of a border of a first thermocouple series circuit (S 1) The surface.The first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) form a closed border of the second thermocouple series circuit This is the area in which the first thermocouple series circuit (S 1) is located.The first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) form a closed border of the third thermocouple series circuit This is the area in which the second thermocouple series circuit (S 2) is located.The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) and the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) and the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) and the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) and the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) and the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) and the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) and the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) form a closed border of the fourth thermocouple series circuit (S 4) The third thermocouple series circuit (S3) is located in the area.In the improved layout, regions of the same doping type are adjacent to each other.The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2), and the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) and the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and the second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2), and the second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) and the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and the third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) and the third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) and the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and the fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2), and the fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) and the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and the fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2), and the fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) and the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and the sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2), and the sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) and the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and the seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2), and the seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) and the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) and the eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2), and the eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) and the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) are adjacent to each other.In the manufacturing process, larger distances must be maintained for adjacent thermocouples of different doping types than for adjacent thermocouples of the same doping type. The improved layout allows the arrangement of as many thermocouples of the same doping type as possible next to one another. In addition to simplifying the manufacturing process, the packing density of the thermocouples is also increased.At least one proposed metal-layer-free thermopile can be used as a thermoelectric generator, regardless of its layout. For this purpose, a voltage must be drawn at the connection terminals of the thermopile, and heating or cooling must be supplied in the spatial vicinity of the transitions from p-doped to n-doped semiconductor materials or from n-doped to p-doped semiconductor materials. This will be explained in more detail briefly with reference to FIG. 8. In this case, the vertical line graduation in FIG. 8 is intended to symbolise p-doped polysilicon and the horizontal line graduation in FIG. 8 is intended to symbolise n-doped polysilicon.The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2), and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2), and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.If the spatial environment of the fourth silicide (SI4) and the fifth silicide (SI5) and the sixth silicide (SI6) and the seventh silicide (SI7) and the eighth silicide (SI8) is heated, a voltage can be drawn between the first connection pad (P1) and the second connection pad (P2).The use of at least one proposed metal-layer-free thermopile, regardless of its layout, as a cooling element is possible. For this purpose, a voltage must be applied to the terminals of the thermopile. In the spatial vicinity of the transitions from p-doped to n-doped semiconductor materials, it commensates to cooling. This will be explained in more detail briefly with reference to FIG. 8. In this case, the vertical line graduation in FIG. 8 is intended to symbolise p-doped polysilicon and the horizontal line graduation in FIG. 8 is intended to symbolise n-doped polysilicon.The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2), and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2), and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.When a voltage is applied between the first connection pad (P 1) and the second connection pad (P 2), cooling occurs in the spatial environment of the fourth silicide (SI 4) and the fifth silicide (SI 5) and the sixth silicide (SI 6) and the seventh silicide (SI 7) and the eighth silicide (SI 8).At least one proposed metal-layer-free thermopile can be tested, independently of its layout, with a construction as shown by way of example in FIG. 11. FIG. 11 shows, by way of example, a possible structure for a proposed test structure for up to two proposed thermopiles by comparison of the temperature determined by the thermopiles to be tested with the temperature determined by a further, deviating thermosensitive sensor structure. By ellipses with dashed outline, the individual elements of the test structure are highlighted in FIG. 11 for the sake of more rapid understanding.Above a sixth diaphragm (MEM6), there is a first resistor (H1W1) of a first heating element (H1). The sixth diaphragm (MEM6) is made of a dielectric material. The sixth membrane (MEM6) is thermally insulated from the substrate below. The first resistor (H1W1) of the first heating element (H1) is of doped or undoped polysilicon and has an electrical resistance on the order of 250 Ω / cm 2.The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a first connection pad (H 1P 1) of the first heating element (H 1) by a first silicide (H 1S 1) of the first heating element (H 1). The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a second connection pad (H 1P 2) of the first heating element (H 1) by a second silicide (H 1S 2) of the first heating element (H 1). The first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1) are not located above the thermally insulated sixth membrane (MEM 6). The first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1) are electrically connected to a voltage source or to further electronic components.Above the sixth membrane (MEM6) is a first thermopile (TP1). The first thermopile (TP 1) is constructed in the same manner as the thermopile shown in FIG. 9 and FIG. 8. The structure of the first thermopile (TP 1) is therefore not explained in more detail here. The first thermopile (TP 1) is electrically connected to a first terminal pad (TP 1P 1) of the first thermopile (TP 1). The interconnection is silicide. The first thermopile (TP 1) is electrically connected to a second terminal pad (TP 1P 2) of the first thermopile (TP 1). The interconnection is silicide. The first connection pad (TP 1P 1) of the first thermopile (TP 1) and the second connection pad (TP 1P 2) of the first thermopile (TP 1) are not above the thermally insulated sixth membrane (MEM 6). The first connection pad (TP 1P 1) of the first thermopile (TP 1) and the second connection pad (TP 1P 2) of the first thermopile (TP 1) can be electrically connected to a voltage measuring device or to further electronic components. A first voltage (UTP1) can be present between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).In FIG. 11, the first thermopile (TP 1) is illustrated by way of example on the right side of the first resistor (H 1W 1) of the first heating element (H 1) and rotated by 90° with respect to the latter.Above the sixth membrane (MEM6) is a second thermopile (TP2). The second thermopile (TP 2) is constructed in the same manner as the thermopile shown in FIG. 9 and FIG. 8. The structure of the second thermopile (TP 2) is therefore not explained in more detail here. The second thermopile (TP 2) is electrically connected to a first terminal pad (TP 2P 1) of the second thermopile (TP 2). The interconnection is silicide. The second thermopile (TP 2) is electrically connected to a second terminal pad (TP 2P 2) of the second thermopile (TP 2). The interconnection is silicide. The first connection pad (TP 2P 1) of the second thermopile (TP 2) and the second connection pad (TP 2P 2) of the second thermopile (TP 2) are not above the thermally insulated sixth membrane (MEM 6). The first connection pad (TP 2P 1) of the second thermopile (TP 2) and the second connection pad (TP 2P 2) of the second thermopile (TP 2) can be electrically connected to a voltage measuring device or to further electronic components. A second voltage (UTP2) can be present between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).In FIG. 11, the second thermopile (TP 2) is exemplarily drawn on the left side of the first resistor (H 1W 1) of the first heater (H 1) and opposite to the first thermopile (TP 1).The test structure according to the invention comprises a further deviating thermosensitive sensor structure for determining the temperature set by the first heating element (H1). For this purpose, a series circuit of four pn or pin diodes is used by way of example.Above the sixth membrane (MEM6) is a first control element (K1). The first control element (K1) comprises a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1).The first diode (K 1D 1) of the first control element (K 1) and the second diode (K 1D 2) of the first control element (K 1) and the third diode (K 1D 3) of the first control element (K 1) and the fourth diode (K 1D 4) of the first control element (K 1) are pn diodes or pin diodes made of polysilicon.The first diode (K 1D 1) of the first control element (K 1) is electrically connected to a first connection pad (K 1P 1) of the first control element (K 1) by a first silicide (K 1S 1) of the first control element (K 1). The fourth diode (K 1D 4) of the first control element (K 1) is electrically connected to a second connection pad (K 1P 2) of the first control element (K 1) by a second silicide (K 1S 2) of the first control element (K 1).The first connection pad (K 1P 1) of the first control element (K 1) and the second connection pad (K 1P 2) of the first control element (K 1) can be electrically connected to a voltage measuring device or to further electronic components. A third voltage (UK) can be present between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).The first control element (K 1) is shown in FIG. 11 opposite the first resistor (H 1W 1) of the first heating element (H 1). However, a different positioning of the first control element (K 1) and the first thermopile (TP 1) and the first resistor (H 1W 1) of the first heating element (H 1) and the second thermopile (TP 2) relative to one another would also be possible.By adjusting the adjustable voltage (UH) between the first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1), a current is adjusted through the first resistor (H 1W 1) of the first heating element (H 1). The thermal power loss in the first resistor (H 1W 1) of the first heating element (H 1) leads to a temperature in the region of the first resistor (H 1W 1) of the first heating element (H 1) that can be adjusted by means of the adjustable voltage (UH). Due to this heating, the first voltage (UTP1) and the second voltage (UTP2) and the third voltage (UK) are different from zero.The functionality of the first thermopile (TP 1) and the functionality of the second thermopile (TP 2) can now be checked by comparing the first voltage (UTP 1) and the second voltage (UTP 2) with the third voltage (UK).At least one proposed metal-layer-free thermopile can be used independently of its layout in the interior of motor vehicles. In this case, the thermopile can also be self-testable. For this purpose, as described above, a heating element without a metal layer should be implemented on the same substrate. One possible use of the metal-layer-free thermopile according to the proposal in the interior of motor vehicles is, for example, in an infrared sensor. This can be used for person detection. The infrared sensor can be used to determine the surface temperature of the persons in the vehicle interior. It is therefore possible to detect an elevated temperature or fever by the driver and to output a corresponding warning. Furthermore, it is possible to distinguish between dead and living organisms on the basis of the surface temperature. If children or domestic animals are left in the vehicle when they are externally locked, then here too, by determining the body surface temperature, imminent overheating can be detected and appropriate measures can be initiated to rescue the child or domestic animal in the vehicle. For example, the vehicle could unlock and inform the environment via an alarm sound. The driver could be informed about the imminent overheating by a message sent automatically to his mobile device.Furthermore, at least two metal-layer-free thermopiles according to the proposal can be arranged independently of their layout to form a one- or two-dimensional thermopile array. The thermopiles of the proposed thermopile array are electrically connected to one another by silicided connection. Such a proposed thermopile array can be used as a sensor in an infrared camera. Such an infrared camera can be used, for example, in motor vehicles to improve the image information of an external camera of the vehicle in the event of darkness.At least one proposed thermopile can be used in an infrared sensor which is used as a receiver in a Halios device. A Halios system comprising at least one Halios device is known in the art (SdT). Reference is made at this point, for example, to DE 10 2015 015 389 A1, DE 10 2017 100 308 B3, EP 1913420 B1. A Halios system may be used for gesture recognition. A Halios device corresponding to the prior art (SdT) is described below with reference to FIG. 12. The description is based here on the description given in DE 10 2015 015 389 A1.Figure 12 shows a Halios device according to the prior art (SdT). Herein, a proposed thermopile can be used as a receiver. A Halios system is composed of at least one Halios device shown in FIG. 12.An infrared LED is used as a transmitter (H). The transmitter (H) emits an optical transmission signal (OS 1). A transmission signal (S5) is generated by a generator (G). The transmission signal (S 5) modulates the amplitude of the transmitter (H) and thus the amplitude of the optical transmission signal (OS 1). The optical transmission signal (OS 1) is reflected and transmitted at an object (O) to be detected.A reflected optical transmission signal (OS3) is received by a receiver (D). The receiver (D) can comprise at least one proposed thermopile. The receiver (D) converts the reflected optical transmission signal (OS 3) into a reception signal (S 0). The received signal (S0) is amplified by a preamplifier (V) to form an amplified received signal (S01). The amplified reception signal (S 01) and the transmission signal (S 5) are multiplied by a first multiplier (MP 1) to form a multiplied reception signal (S 9). The multiplied received signal (S9) is filtered in a filter (F) to form a filter output signal (S10). The filter (F) may be a low pass or band pass filter. The filter output signal (S10) is amplified by a postamplifier (VN) to an amplified filter output signal (S14). The amplified output signal (S14) can be tapped at the device shown. Within the device, the amplified filter output signal (S14) is multiplied at a third multiplier (MP3) with the inverted transmission signal (S5) to form a compensation feed bias signal (S6). The transmission signal (S5) is inverted by multiplication by "-1" at a second multiplier (MP2).The compensation feed pre-signal (S6) is summed at a summer (A) with an offset (B) to form a compensation feed signal (S7). The addition with the offset (B) guarantees a positive value range of the compensation signal (S7). The compensation feed signal (S7) controls a compensation transmitter (K). The compensation transmitter (K) is an infrared LED. The compensation transmitter (K) emits an optical compensation signal (OS2). The optical compensation signal (OS2) is likewise received by the receiver (D) and superimposed with the reflected optical transmission signal (OS3).A) Construction of a Metal-Sheet-Free Thermopile from Metal-Sheet-Free ThermocouplesA thermocouple according to the invention comprises a first substrate (SUB1), a first membrane (MEM1), a first polysilicon layer (PS1), a first insulation layer (I1), a first cavity (C1), a first trench (G1), a second trench (G2), a first thermocouple (TE1), a second thermocouple (TE2), a first silicide (SI1), a second silicide (SI2) and a third silicide (SI3).The first substrate (SUB1) is preferably made of a doped or undoped semiconductor material. It is preferably a piece of a silicon wafer. It can also be made of polysilicon.The first cavity (C 1) is introduced into the first substrate (SUB 1). The first cavity (C1) is made of a material with poor thermal conductivity, preferably air, or vacuumed.The first membrane (MEM1) lies on the first substrate (SUB1) and is located above the first cavity (C1). The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) can also contain absorbers and / or absorber layers for infrared radiation. The absorption capacity can be achieved by the material itself or by micro- or nanostructuring.The first polysilicon layer (PS1) lies on the first membrane (MEM1) and the first insulation layer (I1) lies on the first polysilicon layer (PS1). The first trench (G1) extends from the surface of the first insulation layer (I1) into the first substrate (SUB1). The second trench (G2) extends from the surface of the first insulation layer (I1) into the first substrate (SUB1). The first cavity (C 1) adjoins the first trench (G 1) and the second trench (G 2).The first polysilicon layer (PS 1) includes the first thermocouple (TE 1), the second thermocouple (TE 2), the first silicide (SI 1), the second silicide (SI 2), and the third silicide (SI 3).The first thermocouple (TE 1), the second thermocouple (TE 2), and the second silicide (SI 2) are over the first cavity (C 1). In this case, the second silicide (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicide (SI2) connects the first thermocouple (TE1) and the second thermocouple (TE2) to each other in an electrically conductive manner.The first silicide (SI1) and the second silicide (SI2) and the third silicide (SI3) are made of polysilicon silicided by titanium, for example. The first silicide (SI1) and the third silicide (SI3) are connection points for further thermocouples or electronic components made of polysilicon.The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type may be a p-doping or an n-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.A proposed thermopile comprises at least one thermocouple as described above.In a proposed thermopile comprising at least two thermocouples, at least two thermocouples are electrically connected to one another by silicided.The connection points of a proposed thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.B) Construction of a silicided thermopileA suggested silicided thermopile comprises at least one thermocouple without a metal layer. The metal sheet-free thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping. The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms and / or other suitable metal atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Consequently, the electrically conductive connection comprising the electrically conductive connection of the material of the first thermocouple (TE 1) and of the second thermocouple (TE 2) to further atomic species is a silicide.The electrically conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive metal silicide. It is conceivable to realize electrical connections of different silicides in the same polycrystalline silicon that are connected in parallel into the polycrystalline silicon by implanting different metal atoms, such as, for example, titanium and / or tungsten and / or cobalt and / or nickel atoms and / or other suitable metal atoms, into different depths.Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same layer plane of the CMOS stack. The electrically conductively connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.C) Construction of a metal-layer-free thermocoupleA proposed thermocouple is metal layer-free.A thermopile can be realized with at least one metal-layer-free thermocouple according to the proposal.A proposed metal layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the respective doping. Here, the first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. The conductive connection made from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is preferably a silicide.In this case, the conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is preferably to form titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and or to another electrically conductive metal silicide.The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.D) Construction of a non-metallic thermocoupleA proposed thermocouple is nonmetallic in the sense of this disclosure.A thermopile can be realized with at least one non-metallic thermocouple according to the proposal. Preferably, more than one thermocouple is used.A proposed metal layer-free, thus non-metallic thermocouple in the sense of this disclosure comprises a first thermocouple (TE 1) and a second thermocouple (TE 2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the respective doping. Here, the first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. The conductive connection made from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is preferably a silicide.In this case, the conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is preferably to form titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or to another electrically conductive metal silicide.The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are preferably likewise made of silicide.E) Improved layout of a metal-layer-free thermopileA further suggested silicided thermopile comprises at least one thermocouple without a metal layer.If other semiconductor materials than polycrystalline silicon-also called polysilicon-are used, then instead of the silicide their connection with the corresponding metal is used here. The interconnections of such other, polycrystalline or amorphous semiconductor materials with metals to materials functionally similar to silicides are encompassed by the claims. Thus, when silicide is referred to in this disclosure, the interconnections of such semiconductor materials with metals are encompassed by the claims when resulting in materials functionally similar to silicides and referred to in the claims or in the description of silicide or silicided. When silicides are mentioned, this means intermetallic compounds having a metallic or metal-like conductivity at room temperature.The metal sheet-free thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping. The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Consequently, the electrically conductive connection comprising the electrically conductive connection of the material of the first thermocouple (TE 1) and of the second thermocouple (TE 2) to further atomic species is a silicide.The electrically conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal is preferred. Other metal atoms are also conceivable and included in the claims with regard to silicide formation, provided that functionally similar structures result therefrom.Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same layer plane of the CMOS stack. The electrically conductively connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.Thermocouples of the same doping are arranged directly next to one another.F) Use of a metal-layer-free thermopile as thermoelectric generatorThe invention also relates to the use of a metal-layer-free thermopile as a thermoelectric generator. The thermopile comprises at least one metal-layer-free thermocouple. The thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.The material of the first thermocouple (TE1) and of the second thermocouple (TE2) is preferably polycrystalline silicon.Other polycrystalline or amorphous semiconductor materials are conceivable. When polycrystalline silicon is referred to in this disclosure, such semiconductor materials are encompassed by the claims if they lead to function-like functional elements and are referred to in the claims or in the description of polycrystalline silicon.The conductive connection of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is a silicide.If other semiconductor materials are used, then instead of the silicide, their connection to the corresponding metal is used here. The compounds of such other polycrystalline or amorphous semiconductor materials with metals to materials functionally similar to silicides are encompassed by the claims. Thus, when referring to silicide of this disclosure, the interconnections of such semiconductor materials with metals are encompassed by the claims when resulting in materials functionally similar to silicides and referred to in the claims or in the description of silicide or silicided.The conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.The possible doping of the first thermocouple (TE1) is of a first doping type.The possible doping of the second thermocouple (TE2) is of a second doping type. The first doping type is a p-doping or an n-doping.The second doping type is an n-doping when the first doping type is a p-doping. The second doping type is a p-doping when the first doping type is an n-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The thermopile is partially located above a cavity in the substrate. The cavity is filled with a material having a poor thermal conductivity, preferably with air or vacuum or silicon germanium.The thermopile can be used as a thermoelectric generator.G) Use of a metal-layer-free thermopile as cooling elementThe invention also relates to the use of a metal-layer-free thermopile as cooling element. The thermopile comprises at least one metal-layer-free thermocouple.The thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.The material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon.The conductive connection of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is a silicide.Preferably, the conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.The possible doping of the first thermocouple (TE1) is of a first doping type. The possible doping of the second thermocouple (TE2) is of a second doping type. The first doping type is a p-doping or an n-doping. The second doping type is an n-doping when the first doping type is a p-doping. The second doping type is a p-doping when the first doping type is an n-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The thermopile is partially located above a cavity in the substrate. The cavity is filled with a material having a poor thermal conductivity, preferably with air or vacuum or silicon germanium.A voltage may be applied to the terminals of the thermopile to generate a current flow through the thermopile. The thermopile can be used as a cooling element.H) Apparatus and Method for Testing At Least One Silicided Thermopile in DetailThe invention also relates to a device and a method for testing at least one silicided thermopile. The device comprises a first thermopile (TP 1) and a second thermopile (TP 2), and a first heating element (H 1) and a first control element (K 1).The first thermopile (TP 1) comprises at least one thermocouple. The first thermopile (TP 1) does not contain any metal layers. Electrical connections are realized by silicided formation, for example, by means of titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The first thermopile (TP 1) is electrically connected to a first connection pad (TP 1P 1) of the first thermopile (TP 1) by silicided. The first thermopile (TP 1) is electrically connected to a second connection pad (TP 1P 2) of the first thermopile (TP 1) by silicided.The second thermopile (TP 2) comprises at least one thermocouple. The second thermopile (TP 2) does not contain any metal layers. Electrical connections are realized by silicided formation, for example, by means of titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The second thermopile (TP 2) is electrically connected to a first connection pad (TP 2P 1) of the second thermopile (TP 2) by silicided. The second thermopile (TP 2) is electrically connected to a second connection pad (TP 2P 2) of the second thermopile (TP 2) by silicided.The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) made of polycrystalline silicon, also called polysilicon.The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a first connection pad (H 1P 1) of the first heating element (H 1) by a first silicide (H 1S 1) of the first heating element (H 1).The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a second connection pad (H 1P 2) of the first heating element (H 1) by a second silicide (H 1S 2) of the first heating element (H 1).An adjustable voltage (UH) can be applied between the first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1).The first control element (K1) preferably comprises a series circuit comprising a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1).The first diode (K 1D 1) of the first control element (K 1) and the second diode (K 1D 2) of the first control element (K 1) and the third diode (K 1D 3) of the first control element (K 1) and the fourth diode (K 1D 4) of the first control element (K 1) are preferably pn diodes or pin diodes made of polysilicon.The first diode (K 1D 1) of the first control element (K 1) is electrically connected to a first connection pad (K 1P 1) of the first control element (K 1) by a first silicide (K 1S 1) of the first control element (K 1).The fourth diode (K 1D 4) of the first control element (K 1) is electrically connected to a second connection pad (K 1P 2) of the first control element (K 1) by a second silicide (K 1S 2) of the first control element (K 1).The first thermopile (TP 1) and the second thermopile (TP 2) may be connected in series with each other to form a thermopile.Preferably, the first thermopile (TP 1) and the second thermopile (TP 2) are arranged opposite each other.Preferably, the first heating element (H1) and the first control element (K1) are arranged opposite each other.Preferably, the straight line on which the first thermopile (TP 1) and the second thermopile (TP 2) are arranged intersects orthogonally with the straight line on which the first heating element (H 1) and the first control element (K 1) are arranged.The method for testing at least one thermopile is based on the device described above.An adjustable voltage (UH) is applied between the first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1).As a result of the thermal power loss in the first resistor (H 1W 1) of the first heating element (H 1), a temperature increase occurs at the first resistor (H 1W 1) of the first heating element (H 1).The first heating element (H 1) is thermally coupled to the first thermopile (TP 1).A first voltage (UTP1) is therefore then measured between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).A second voltage (UTP2) is thus measured between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).A third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).The first voltage (UTP1), and the second voltage (UTP2), and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).The operability of the first thermopile (TP 1) and the second thermopile (TP 2) is checked by comparing the first voltage (UTP 1) and the second voltage (UTP 2) with the third voltage (UK).If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a predefined threshold value, the first thermopile (TP1) is assessed as functional. If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is greater than the predefined threshold value, the first thermopile (TP1) is evaluated as non-functional.If, for example, the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is less than the predefined threshold value, the second thermopile (TP2) is assessed as functional. If, for example, the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is greater than the predefined threshold value, the second thermopile (TP2) is evaluated as non-functional.If, for example, the difference between the magnitude of the first voltage (UP 1) and the magnitude of the second voltage (UP 2) is less than the predefined threshold value, the first thermopile (TP 1) and the second thermopile (TP 2) are assessed as functional. If, for example, the difference between the magnitude of the first voltage (UP 1) and the magnitude of the second voltage (UP 2) is greater than the predefined threshold value, the first thermopile (TP 1) and / or the second thermopile (TP 2) are evaluated as non-functional.Typically, the evaluations are handled such that an evaluation as "non-functional" results in an overall evaluation of the thermopile array as non-functional.I) Apparatus and Method for Testing At Least one Thermopile In GeneralThe invention relates to a device and a method for testing at least one silicided thermopile. The device for testing at least one thermopile comprises a first thermopile (TP 1) and a first heating element (H 1) and a first control element (K 1).Preferably, both the first thermopile and the first heating element (H 1) are non-metallic and preferably manufactured from a semiconductor material, for example polycrystalline silicon with possibly locally silicided functional elements.The first thermopile (TP 1) thus comprises at least one metal-layer-free thermocouple. This means that this thermocouple is not metallic within the meaning of this disclosure.The first control element (K1) comprises at least one further metal-layer-free deviating thermosensitive sensor structure. This means that the control element (K1) is not metallic within the meaning of this disclosure.The first heating element (H 1) comprises a metal layer-free first resistor (H 1W 1) of the first heating element (H 1). This means that this first resistor (H 1W 1) is not metallic within the meaning of this disclosure.The first thermopile (TP 1) and the first heating element (H 1) and the first control element (K 1) are preferably arranged as close as possible to one another in order to enable good thermal coupling.The method for testing at least one silicided thermopile is based on the proposed device described above. The temperature increase arising as a result of thermal power loss in the first resistor (H1W1) of the first heating element (H1) is adjusted by applying an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).A first voltage (UTP1) is measured at the first thermopile (TP1).A third voltage (UK) is measured at the first control element (K1).The first voltage (UTP1) and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).The functionality of the first thermopile (TP 1) is checked by comparing the first voltage (UTP 1) with the third voltage (UK).If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a predefined threshold value, the first thermopile (TP1) is assessed as functional. If, for example, the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is greater than the predefined threshold value, the first thermopile (TP1) is evaluated as non-functional.In the simplest case, the method for testing at least one thermopile is carried out using a device which comprises only one heating element and one thermopile. The temperature increase arising as a result of thermal power loss in the first resistor (H 1W 1) of the first heating element (H 1) is then set at the first resistor (H 1W 1) of the first heating element (H 1) by applying the adjustable voltage (UH) between the first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1). A first voltage (UTP1) is then measured again between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1). The first voltage (UTP1) is then dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1). The functionality of the first thermopile (TP 1) is then checked by comparing the first voltage (UTP 1) with a predefined, set or programmed setpoint value.J) Motor vehicle having at least one self-testable metal-layer-free thermopileThe invention also relates to a device and a method for testing at least one metal-layer-free thermopile in motor vehicles. The proposed device comprises a first thermopile (TP 1) and a first heating element (H 1) and a first control element (K 1).The first thermopile (TP 1) and the first heating element (H 1) and the first control element (K 1) are preferably free of metal layers.The first thermopile (TP 1) comprises at least one metal-layer-free thermocouple.The first control element (K1) comprises at least one further deviating thermosensitive sensor structure.The first heating element (H 1) comprises a first resistor (H 1W 1) of the first heating element (H 1).The first thermopile (TP 1) and the first heating element (H 1) and the first control element (K 1) are preferably arranged as close as possible to one another in order to couple them thermally well.The method for testing at least one metal-layer-free thermopile is based on the proposed device described above.The temperature increase arising as a result of thermal power loss in the first resistor (H1W1) of the first heating element (H1) is adjusted by applying an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).A first voltage (UTP1) can be measured at the terminals of the first thermopile (TP1).A third voltage (UK) can be measured at the connection terminals of the first control element (K1).The first voltage (UTP1) and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).The functionality of the first thermopile (TP 1) can be checked by comparing the first voltage (UTP 1) with the third voltage (UK).The proposed device and the proposed method can be used for implementing self-testable metal-layer-free thermopiles in infrared sensors in motor vehicles. The test can be carried out at the end of production of the vehicle, but also at standstill or not in use of the vehicle or during operation, i.e. during travel.K) Thermopile in infrared sensor for person detection in vehicle interior spacesA further proposed thermopile comprises at least one first thermocouple, in particular one without a metal layer. The thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping.The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polysilicon. The electrically conductive connection made from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is a silicide, preferably titanium silicide and / or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.The silicide electrically connecting the first thermocouple (TE1) and the second thermocouple (TE2) to each other is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).The possible doping of the first thermocouple (TE1) is of a first doping type.The possible doping of the second thermocouple (TE2) is of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is an n-doping when the first doping type is a p-doping.The second doping type is a p-doping when the first doping type is an n-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the thermopile for electrical connection to other electronic components are preferably made of silicide.At least one proposed thermopile can be used as part of an infrared sensor system or infrared sensor.It is proposed to use at least one such infrared sensor in interior spaces of motor vehicles for detecting persons.This at least one infrared sensor can then be used in interior spaces of motor vehicles for detecting the body temperature of the vehicle occupants, in particular for detecting fever.This at least one infrared sensor can likewise be used, for example, in interior spaces of motor vehicles for detecting the body temperature of the vehicle occupants, in particular for distinguishing between dead and living organisms.Likewise, this at least one infrared sensor can be used in interior spaces of motor vehicles for detecting the body temperature of the vehicle occupants, even in the case of external locking. This enables the body temperature of children or domestic animals remaining in the vehicle, which is elevated compared to the environment, to be detected for the purpose of issuing an alarm in order to avoid accidents.L) Thermopile Array in an Infrared CameraA further suggested silicided thermopile preferably comprises at least one thermocouple free of metal layers.The metal sheet-free thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping. The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.The material of the first thermocouple (TE1) and of the second thermocouple (TE2) is preferably polycrystalline silicon, so-called polysilicon. Consequently, the electrically conductive connection comprising the electrically conductive connection of the material of the first thermocouple (TE 1) and of the second thermocouple (TE 2) to further atomic species is a silicide.The electrically conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species is preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same plane. The electrically conductively connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type may be a p-doping or an n-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.Thermocouples of the same doping are preferably arranged directly next to one another.A proposed thermopile array comprises a one- or two-dimensional arrangement of at least two proposed thermopiles.The thermopiles of the thermopile array are electrically connected to one another by silicided formation.A proposed infrared camera comprises at least one thermopile array of proposed, i.e. non-metallic, thermopiles.A proposed method for improving the images of an external camera of a motor vehicle in darkness uses the additional image information of a proposed infrared camera. Here, the image information of the infrared camera and the second external camera are combined to form common image information. This combination is effected by summing the amplitude values.M) Halios Device with ThermopileIn this variant, reference is already made at this point to the explanation of the Halios device in FIG. 12 which follows this description. The Halios principle is explained there.A further suggested silicided thermopile comprises at least one thermocouple without a metal layer.The metal sheet-free thermocouple includes a first thermocouple (TE1) and a second thermocouple (TE2).The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for a possible doping. The first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. Consequently, the electrically conductive connection comprising the electrically conductive connection of the material of the first thermocouple (TE 1) and of the second thermocouple (TE 2) to further atomic species is a silicide, preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal.Preferably, the first thermocouple (TE1) and the second thermocouple (TE2) are in the same plane. The electrically conductively connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type may be a p-doping or an n-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.Thermocouples of the same doping are preferably arranged directly next to one another.In a Halios device, at least one proposed thermopile is used in a receiver (D).In summary, such a thermopile-halios system can thus be described as a halios device, having a transmitter (H) and a compensation transmitter (K) which beam into a receiver (D) in a complementary superposition fashion. The receiver (D) generates a received signal (S0), wherein the transmission amplitude of the transmitter (H) and / or the transmission amplitude of the compensation transmitter (K) are controlled by a controller (V, MP1, F, MP, A) in such a way that essentially a direct signal results as the received signal (S0), apart from control errors and / or external disturbances. The proposed device is characterized in that at least one thermopile is used as a receiver (D) for electromagnetic radiation of the transmitter (H) and of the compensation transmitter (K). The thermopile is preferably metal layer-free and / or nonmetallic.In this context, particular reference is made to the following protective rights from the prior art, which describe the Halios principle: EP 2 817 657 B, DE 10 001 955 A1, DE 10 001 943 C1, DE 10 346 741 B3, EP 2 936 201 A1, WO 2007 012 502 A1, EP 1 671 160 A1, EP 1 410 507 A1, EP 1435 509 A1, EP 1 269 929 A1, EP 1 258 084 A, EP 1 480 015 A1, EP 1 579 307 B1, DE 10 2005 045 993 B4, EP 0 706 648 A1, EP 2 016 480 A2, EP 2 783 232 B1, DE 11 2013 002 097 A5, EP 2 679 982 A1, DE 10 2013 013 664 B3, DE 10 2012 010627 A1, DE 10 2013 019 660 A1, DE 10 2013 000 376 A1, EP 2 405 283 B1, DE 10 2015 002 271 A1, DE 10 2015 006 174 B3, DE 10 2014 019 172 A1, DE 10 2015 015 389 A1, DE 10 2015 100 308 B3, DE 10 2015 100 306 A1.The use of the principle of metal freedom of a thermocouple by means of silicides presented here and the use as receiver in a Halios system together with the applications of the prior art documents presented above is a full part of this disclosure and claim. The applicant expressly reserves the right to separate parts of the technical teaching of the documents in combination with the novel features according to the invention in the application process as separate partial applications.N) Membrane-free thermopile / thermopile as cantileverA proposed thermocouple is metal layer-free.A thermopile can be realized with at least one metal-layer-free thermocouple according to the proposal.A proposed metal layer-free thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the respective doping. Here, the first thermocouple (TE 1) and the second thermocouple (TE 2) are electrically connected to each other via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2), in each case mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.Preferably, the material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon. The conductive connection made from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) to further atomic species is preferably a silicide.In this case, the conductive connection made of the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with further atomic species titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another metal is preferred.The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.The first doping type may be a p-doping or an n-doping.The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.Doping of the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.The connection points of the suggested silicided thermopile for electrical connection to other electronic components or further thermopiles are made of silicide.The first thermocouple (TE1) and the second thermocouple (TE2) do not comprise a dielectric membrane in this variant.O) Silicided Sensor on DiaphragmA proposed sensor for electromagnetic radiation, in particular for infrared radiation, is now located on a membrane in contrast to variant N).The proposed sensor is free of metal layers.All electrically conductive compounds within the sensor and to other electronic components consist of the electrically conductive compound of the material of the sensor, mixed with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.The material of the sensor is silicon or polycrystalline silicon.The electrically conductive connection made from the electrically conductive connection of the material of the sensor with wide atomic species is a silicide, preferably titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.The membrane on which the sensor is located is preferably made of an oxide or of a nitride and can contain absorbers and / or absorber layers.Advantage Of the InventionThe electrical connection of thermocouples made of heavily n-doped and heavily p-doped polysilicon by silicided of the polycrystalline silicon, the so-called polysilicon, to form a thermocouple and the realization of further electrical supply lines and connections by silicided of the polysilicon make possible a metal-layer-free construction.Alternatively, a thermocouple according to the proposal can also be realized by completely silicided the surface of a thermocouple of the thermocouple. It is initially immaterial whether doped or undoped polysilicon is present below this silicide formation and whether the other thermocouple consists of doped or undoped polysilicon. The thermocouple with the silicided surface thereby has a Seebeck coefficient different from the thermocouple without silicided surface.This results in the advantage that very thin membranes and CMOS stacks can be realized with integrated thermocouples, since the thermal expansion coefficients of the functional elements are approximately the same and thus no corruption of the thermal voltages of the PN diodes takes place as a result of mechanical stress effects. This results in a decrease in thermal mass and thermal conductivity and, consequently, a higher sensitivity of the infrared sensor. In particular, the reaction time constants to temporal changes in the irradiation situation of the thermopile elements are improved. The tracking of moving objects in infrared cameras equipped with such thermopiles is improved by the shorter time constant due to the reduced heat capacity. The use of nonmetallic heating elements as actuators of a self-test device avoids a reduction in these advantages. Due to the smaller space requirement, a higher packing density of thermocouples can be realized with the same sensor size. This results in a larger sensor signal and thus an improved signal-to-noise ratio.Furthermore, a greater functional design freedom results in the CMOS stack and a simplification of the process flow associated therewith. The mechanical robustness is improved due to a reduction of mechanical stresses.A further important advantage of the technical teaching disclosed here is the self-adjustment of the silicide formation during the production of the thermocouple or thermopile.List of the FiguresFIG. 1 shows an exemplary, non-claimed cross section of a prior art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple of n-doped polysilicon and a thermocouple of aluminum. FIG. 2 shows an exemplary, non-claimed cross section of an infrared thermosensor according to the prior art (SdT). The thermocouples each consist of a thermocouple of heavily p-doped silicon and a thermocouple of aluminum. FIG. 3 shows an exemplary, non-claimed cross section of an infrared thermosensor according to the prior art (SdT). The thermocouples each consist of a thermocouple of p-doped polysilicon and a thermocouple of n-doped polysilicon. FIG. 4 shows an exemplary, non-claimed cross section of an infrared thermosensor according to the prior art (SdT). The thermocouples each consist of a thermocouple of heavily p-doped silicon and a thermocouple of n-doped polysilicon. FIG. 5 shows, by way of example, the cross section of a possible structure of the proposed thermocouple. A thermocouple is of heavily n-doped polysilicon and a thermocouple is of heavily p-doped silicon. The thermocouple is metal-layer-free. FIG. 6 shows a simplified illustration of a possible structure of the proposed thermocouple. The simplified illustration illustrates the arrangement of thermocouples and silicided relative to each other. FIG. 7 shows a simplified illustration of a possible structure of the proposed thermocouple, in which a silicided action acts as a thermocouple. FIG. 8 shows, by way of example, a series connection of four proposed thermocouples to form a proposed thermopile. It is emphasized which thermocouples are part of a thermocouple. FIG. 9 shows the same exemplary series connection of four proposed thermocouples to form a proposed thermopile as FIG. 8, The protrusion, which thermocouples are part of a thermocouple, has been omitted for better clarity. FIG. 10 shows, by way of example, the improved layout of a series connection of four proposed thermocouples to form a proposed thermopile. Regions of the same doping are adjacent here. This allows smaller distances between the thermocouples and simplification of the manufacturing process to be achieved. FIG. 11 shows, by way of example, a possible structure for a proposed test structure for up to two proposed thermopiles by comparison of the temperature determined by the thermopiles to be tested with the temperature determined by a further, deviating thermosensitive sensor structure. By ellipses with dashed outline, the individual elements of the test structure are emphasized for more rapid understanding. Figure 12 shows a Halios device according to the prior art (SdT). A proposed thermopile can be used as a receiver here as proposed.DESCRIPTION OF THE FIGURESThe figures illustrate possible embodiments and uses of the invention. However, the invention is not limited thereto. The claims are relevant to the claimed scope.FIG. 1 shows a schematic view of FIG. 1FIG. 1 shows an exemplary cross-section of a prior art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple of n-doped polysilicon and a thermocouple of aluminum.A second membrane (MEM2) is located on a second substrate (SUB2).On the second membrane (MEM2) there is a second insulation layer (I2).On the second insulation layer (I2), there is a third insulation layer (I3).The second substrate (SUB2) is made of doped or undoped silicon or doped or undoped polysilicon. The second diaphragm (MEM2) is made of a dielectric material.A third trench (G3) having a width (BG3) of the third trench (G3) and a length (LG3) of the third trench (G3) and a height (HG3) of the third trench (G3) from the surface of the third insulation layer (I3) is introduced into the second substrate (SUB2) at a fifth distance (d5) from a second left side surface (LSF2) of the described stack, consisting of the second substrate (SUB2) and the second membrane (MEM2) and the second insulation layer (I2) and the third insulation layer (I3) and at a seventh distance (d7) from a second rear side surface (HSF2) of the described stack.A fourth trench (G4) having a width (BG4) of the fourth trench (G4) and a length (LG4) of the fourth trench (G4) and a height (HG4) of the fourth trench (G4) from the surface of the third insulation layer (I3) is introduced into the second substrate (SUB2) at a sixth distance (d6) from a second right side surface (RSF2) of the described stack and at an eighth distance (d8) from the second rear side surface (HSF2) of the described stack.The fifth distance (d5) is equal to the sixth distance (d6). The seventh distance (d7) is equal to the eighth distance (d8). The width (BG 3) of the third trench (G 3) is equal to the width (BG 4) of the fourth trench (G 4). The length (LG3) of the third trench (G3) is equal to the length (LG4) of the fourth trench (G4). The height (HG3) of the third trench (G3) is equal to the height (HG4) of the fourth trench (G4).A substrate-free second cavity (C2) is introduced between the third trench (G3) and the fourth trench (G4) below the second membrane (MEM2).The second insulation layer (I2) comprises a fourth thermocouple (TE4) and a sixth thermocouple (TE6) above the second cavity (C2). The third insulation layer (I3) comprises a third thermocouple (TE3) and a fifth thermocouple (TE5) above the second cavity (C2). The third thermocouple (TE3) is electrically conductively connected to the fourth thermocouple (TE4). The fifth thermocouple (TE5) is electrically conductively connected to the sixth thermocouple (TE6). The third thermocouple (TE 3) and the fifth thermocouple (TE 5) are made of aluminum. The fourth thermocouple (TE4) and the sixth thermocouple (TE6) are made of n-doped polysilicon. The electrically conductive connection between the third thermocouple (TE3) and the fourth thermocouple (TE4) is made of aluminum. The electrically conductive connection between the fifth thermocouple (TE5) and the sixth thermocouple (TE6) is made of aluminum.FIG. 2 shows a schematic view of FIG. 2FIG. 2 shows an exemplary cross section of a prior art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple of heavily p-doped silicon and a thermocouple of aluminum.A third membrane (MEM3) is located on a third substrate (SUB3). On the third diaphragm (MEM3), a fourth insulation layer (I4) is provided. On the fourth insulation layer (I4), a fifth insulation layer (I5) is located.The third substrate (SUB3) is made of doped or undoped silicon or doped or undoped polysilicon. The third diaphragm (MEM3) is made of a dielectric material.A fifth trench (G5) is introduced into the third substrate (SUB3) at a ninth distance (d9) from a third left side surface (LSF3) of the described stack, consisting of the third substrate (SUB3) and the third membrane (MEM3) and the fourth insulation layer (I4) and the fifth insulation layer (I5), and at an eleventh distance (d11) from a third rear side surface (HSF3) of the described stack, with a width (BG5) of the fifth trench (G5) and a length (LG5) of the fifth trench (G5) and a height (HG5) of the fifth trench (G5) from the surface of the fifth insulation layer (I5).A sixth trench (G6) having a width (BG6) of the sixth trench (G6) and a length (LG6) of the sixth trench (G6) and a height (HG6) of the sixth trench (G6) from the surface of the fifth insulation layer (I5) is introduced into the third substrate (SUB3) at a tenth distance (d10) from a third right side surface (RSF3) of the described stack and at a twelfth distance (d12) from the third rear side surface (HSF3) of the described stack.The ninth distance (d9) is equal to the tenth distance (d10). The eleventh distance (d 11) is equal to the twelfth distance (d 12). The width (BG 5) of the fifth trench (G 5) is equal to the width (BG 6) of the sixth trench (G 6). The length (LG5) of the fifth trench (G5) is equal to the length (LG6) of the sixth trench (G6). The height (HG5) of the fifth trench (G5) is equal to the height (HG6) of the sixth trench (G6).A substrate-free third cavity (C3) is introduced between the fifth trench (G5) and the sixth trench (G6) below the third membrane (MEM3). A first trough (W 1) is introduced into the third cavity (C 3). The first well (W 1) includes a seventh thermocouple (TE 7) and a ninth thermocouple (TE 9). The fourth insulation layer (I4) and the fifth insulation layer (I5) comprise an eighth thermocouple (TE8). The fourth insulation layer (I4) and the fifth insulation layer (I5) comprise a tenth thermocouple (TE10). The eighth thermocouple (TE8) is electrically connected to the seventh thermocouple (TE7). The tenth thermocouple (TE 10) is electrically conductively connected to the ninth thermocouple (TE 9).The first well (W1) is made of n-doped polysilicon or n-doped silicon. The seventh thermocouple (TE7) is made of heavily p-doped polysilicon. The ninth thermocouple (TE9) is made of heavily p-doped polysilicon. The eighth thermocouple (TE8) is made of aluminum. The ninth thermocouple (TE9) is made of aluminum.FIG. 3 shows a schematic view of FIG. 3FIG. 3 shows an exemplary cross section of a prior art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple of p-doped polysilicon and a thermocouple of n-doped polysilicon.A fourth membrane (MEM4) is located on a fourth substrate (SUB4).On the fourth diaphragm (MEM4), there is a sixth insulation layer (I6).On the sixth insulation layer (I6), a seventh insulation layer (I7) is located.On the seventh insulation layer (I7), an eighth insulation layer (I8) is provided.The fourth substrate (SUB4) is made of doped or undoped silicon or doped or undoped polysilicon. The fourth diaphragm (MEM4) is made of a dielectric material.At a thirteenth distance (d13) from a fourth left side surface (LSF4) of the described stack, consisting of the fourth substrate (SUB4) and the fourth membrane (MEM4) and the sixth insulation layer (I6) and the seventh insulation layer (I7) and the eighth insulation layer (I8), and at a fifteenth distance (d15) from a fourth rear side surface (HSF4) of the described stack, a seventh trench (G7) having a width (BG7) of the seventh trench (G7) and a length (LG7) of the seventh trench (G7) and a height (HG7) of the seventh trench (G7) is introduced from the surface of the eighth insulation layer (I8) into the fourth substrate (SUB4).At a fourteenth distance (d14) from a fourth right side surface (RSF4) of the described stack and at a sixteenth distance (d16) from the fourth rear side surface (HSF4) of the described stack, an eighth trench (G8) having a width (BG8) of the eighth trench (G8) and a length (LG8) of the eighth trench (G8) and a height (HG8) of the eighth trench (G8) from the surface of the eighth insulation layer (I8) is introduced into the fourth substrate (SUB4).The thirteenth distance (d 13) is equal to the fourteenth distance (d 14). The fifteenth distance (d15) is equal to the sixteenth distance (d16). The width (BG 7) of the seventh trench (G 7) is equal to the width (BG 8) of the eighth trench (G 8). The length (LG7) of the seventh trench (G7) is equal to the length (LG8) of the eighth trench (G8). The height (HG7) of the seventh trench (G7) is equal to the height (HG8) of the eighth trench (G8).A substrate-free fourth cavity (C4) is introduced between the seventh trench (G7) and the eighth trench (G8) below the fourth membrane (MEM4).The sixth insulation layer (I6) comprises a twelfth thermocouple (TE12) and a fourteenth thermocouple (TE14) above the fourth cavity (C4). The seventh insulation layer (I7) comprises an eleventh thermocouple (TE11) and a thirteenth thermocouple (TE13) above the fourth cavity (C4). The eighth insulation layer (I8) comprises a first metallic compound (M1) above the eleventh thermocouple (TE11) and the twelfth thermocouple (TE12). The eighth insulation layer (I8) comprises a second metallic compound (M2) above the thirteenth thermocouple (TE13) and the fourteenth thermocouple (TE14). The first metallic junction (M 1) electrically connects the eleventh thermocouple (TE 11) and the twelfth thermocouple (TE 12) to each other. The second metallic junction (M 2) electrically connects the thirteenth thermocouple (TE 13) and the fourteenth thermocouple (TE 14) to each other.The eleventh thermocouple (TE11) and the thirteenth thermocouple (TE13) are made of p-doped polysilicon. The twelfth thermocouple (TE12) and the fourteenth thermocouple (TE14) are made of n-doped polysilicon. The first metallic compound (M 1) and the second metallic compound (M 2) are made of aluminum.FIG. 4 shows a schematic of FIG. 4FIG. 4 shows an exemplary cross section of a prior art infrared thermal sensor (SdT). The thermocouples each consist of a thermocouple of heavily p-doped silicon and a thermocouple of n-doped polysilicon.A fifth membrane (MEM5) is located on a fifth substrate (SUB5). On the fifth diaphragm (MEM5), there is a ninth insulation layer (I9). On the ninth insulation layer (I9), there is a tenth insulation layer (I10).The fifth substrate (SUB5) is made of doped or undoped silicon or doped or undoped polysilicon. The fifth diaphragm (MEM5) is made of a dielectric material.A ninth trench (G9) having a width (BG9) of the ninth trench (G9) and a length (LG9) of the ninth trench (G9) and a height (HG9) of the ninth trench (G9) is introduced into the fifth substrate (SUB5) at a seventeenth distance (d17) from a fifth left side surface (LSF5) of the described stack, and from the surface of the tenth insulating layer (I10) at a nineteenth distance (d19) from a fifth rear side surface (HSF5) of the described stack, and comprising the fifth trench (G9) and a length (LG9) of the ninth trench (G9) and a height (HG9) of the ninth trench (G9).In an eighteenth distance (d 18) from a fifth right side surface (RSF 5) of the described stack and in a twentieth distance (d 20) from the fifth rear side surface (HSF 5) of the described stack, a tenth trench (G 10) having a width (BG 10) of the tenth trench (G 10) and a length (LG 10) of the tenth trench (G 10) and a height (HG 10) of the tenth trench (G 10) from the surface of the tenth insulation layer (I 10) is introduced into the fifth substrate (SUB 5).The seventeenth distance (d 17) is preferably equal to the eighteenth distance (d 18).The nineteenth distance (d 19) is preferably equal to the twentieth distance (d 20).The width (BG 9) of the ninth trench (G 9) is preferably equal to the width (BG 10) of the tenth trench (G 10).The length (LG 9) of the ninth trench (G 9) is preferably equal to the length (LG 10) of the tenth trench (G 10).The height (HG 9) of the ninth trench (G 9) is preferably equal to the height (HG 10) of the tenth trench (G 10).A substrate-free fifth cavity (C5) is introduced between the ninth trench (G9) and the tenth trench (G10) below the fifth membrane (MEM5). A fifteenth thermocouple (TE15) and a seventeenth thermocouple (TE17) are introduced into the fifth cavity (C5) directly below the fifth membrane (MEM5). The ninth insulation layer (I9) includes a sixteenth thermocouple (TE16) and an eighteenth thermocouple (TE18).The tenth insulation layer (I10) comprises a third metallic compound (M3) above the fifteenth thermocouple (TE15) and the sixteenth thermocouple (TE16). The tenth insulation layer (I10) comprises a fourth metallic compound (M4) above the seventeenth thermocouple (TE17) and the eighteenth thermocouple (TE18). The third metallic junction (M3) electrically connects the fifteenth thermocouple (TE15) and the sixteenth thermocouple (TE16) to each other. The fourth metallic junction (M 4) electrically connects the seventeenth thermocouple (TE 17) and the eighteenth thermocouple (TE 18).The fifteenth thermocouple (TE15) and the seventeenth thermocouple (TE17) are made of heavily p-doped polysilicon. The sixteenth thermocouple (TE16) and the eighteenth thermocouple (TE18) are made of n-doped polysilicon. The third metallic compound (M3) and the fourth metallic compound (M4) are made of aluminum.FIG. 5 shows a schematic view of FIG. 5FIG. 5 shows, by way of example, the cross section of a possible structure of the proposed thermocouple.A first membrane (MEM1) is located on a first substrate (SUB1). On the first diaphragm (MEM1) is a first polysilicon layer (PS1). On the first polysilicon layer (PS1), a first insulation layer (I1) is located.The first substrate (SUB1) is made of doped or undoped silicon or doped or undoped polysilicon. The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) may contain absorbers and / or absorber layers for infrared radiation.A first trench (G1) having a width (BG1) of the first trench (G1) and a length (LG1) of the first trench (G1) and a height (HG1) of the first trench (G1) from the surface of the first insulation layer (I1) is introduced into the first substrate (SUB1) at a first distance (d1) from a first left side surface (LSF1) of the described stack, and comprising the first substrate (SUB1) and the first membrane (MEM1) and the first polysilicon layer (PS1) and the first insulation layer (I1) and at a third distance (d3) from a first rear side surface (HSF1) of the described stack.A second trench (G 2) having a width (BG 2) of the second trench (G 2) and a length (LG 2) of the second trench (G 2) and a height (HG 2) of the second trench (G 2) from the surface of the first insulation layer (I 1) is introduced into the first substrate (SUB 1) at a second distance (d 2) from a first right side surface (RSF 1) of the described stack and at a fourth distance (d 4) from the first rear side surface (HSF 1) of the described stack.Preferably, the first distance (d1) is equal to the second distance (d2). Preferably, the third distance (d3) is equal to the fourth distance (d4). Preferably, the width (BG 1) of the first trench (G 1) is equal to the width (BG 2) of the second trench (G 2). Preferably, the length (LG1) of the first trench (G1) is equal to the length (LG2) of the second trench (G2). Preferably, the height (HG1) of the first trench (G1) is equal to the height (HG2) of the second trench (G2).A substrate-free first cavity (C1) is introduced between the first trench (G1) and the second trench (G2) below the first membrane (MEM1).The first polysilicon layer (PS 1) comprises a first thermocouple (TE 1) and a second thermocouple (TE 2) and a second silicide (SI 2) above the first cavity (C 1). The second silicide (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicide (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2).The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first doping type may be an n-doping or a p-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping. The second silicide (SI2) consists of polysilicon silicided, for example, by means of titanium.Between the first left side surface (LSF 1) and the first trench (G 1), the first polysilicon layer (PS 1) comprises a first silicide (SI 1). Between the first right side surface (RSF 1) and the second trench (G 2), the first polysilicon layer (PS 1) comprises a third silicide (SI 3). The first silicide (SI1) consists of polysilicon silicided, for example, by means of titanium. The third silicide (SI3) consists of polysilicon silicided, for example, by means of titanium. The first silicide (SI1) and the third silicide (SI3) serve as electrically conductive connection points for further thermocouples or other electronic components.Reference is made again here to the other possibilities of silicide formation already described.FIG. 6 shows a FIG. 6FIG. 6 shows a simplified illustration of a possible structure of the proposed thermocouple. The simplified illustration illustrates the arrangement of thermocouples and silicided relative to each other.A nineteenth thermocouple (TE19) is adjacent to a twentieth thermocouple (TE20).The nineteenth thermocouple (TE19) is made of heavily doped polysilicon of a first oneDoping type. The twentieth thermocouple (TE20) is comprised of heavily doped polysilicon of a second doping type. The first doping type may be an n-doping or a p-doping. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.The nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) form a pn junction.A twentieth silicide (SI20) extends from the surface of the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) as far as into the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). However, the twentieth silicide (SI20) does not spatially separate the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). A pn junction remains below the twentieth silicide (SI20).The twentieth silicide (SI20) consists of polysilicon silicided, for example, by means of titanium atoms. Silicided using tungsten and / or cobalt and / or nickel atoms and / or other suitable metal atoms is likewise possible.FIG. 7 shows a schematic view of FIG. 7FIG. 7 shows a simplified illustration of a possible structure of the proposed thermocouple, in which a silicided action acts as a thermocouple.A twenty-first thermocouple (TE21) is adjacent to a twenty-second thermocouple (TE22). The twenty-first thermocouple (TE21) is of undoped polysilicon or of doped polysilicon. The twenty-second thermocouple (TE22) is of undoped polysilicon or doped polysilicon and comprises a twenty-first silicide (SI21). The twenty-first silicide (SI21) extends over the entire surface of the polysilicon of the twenty-second thermocouple (TE22).For the use of the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) comprising the twenty-first silicided (SI21) as thermocouple, the different Seebeck coefficients of the twenty-first thermocouple (TE21) and the twenty-first silicided (SI21) are decisive.FIG. 8 shows an embodiment of FIG. 8FIG. 8 shows, by way of example, a series connection of four proposed thermocouples to form a proposed thermopile. It is emphasized which thermocouples are part of a thermocouple. For this purpose, the thermocouples of a thermocouple are surrounded by a rectangle enclosed by dashed lines.A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) through a sixth silicide (SI6).A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) through a seventh silicide (SI7).A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).The second thermocouple (TC 12) of the first thermocouple (TC 1) is electrically connected to the first thermocouple (TC 21) of the second thermocouple (TC 2) via a ninth silicide (SI 9).The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).The first thermocouple (TC 11) of the first thermocouple (TC 1) is electrically connected to a first pad (P 1) through a thirteenth silicide (SI 13).The second thermocouple (TC 52) of the fifth thermocouple (TC 5) is electrically connected to a second pad (P 2) through fourteenth silicide (SI 14).A temperature-dependent voltage (UT) is present between the first connection pad (P 1) and the second connection pad (P 2).The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2), and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first type of doping is illustrated in FIG. 8 by vertically dashed lines. The first doping type may be a p- or an n-doping.The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2), and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first type of doping is illustrated in FIG. 8 by horizontal dashed lines. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.The shape and position of the thermocouples and the silicided regions is shown here only by way of example and can also be implemented differently.FIG. 9 shows a schematic of FIG. 9FIG. 9 shows the same exemplary series connection of four proposed thermocouples to form a proposed thermopile as FIG. 8, The protrusion of which thermocouples are part of a thermocouple was omitted for better clarity. The following description is identical to the description of Fig. 8 and is given for the sake of completeness only.A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicide (SI4).A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicide (SI5).A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected to a second thermocouple (TC32) of the third thermocouple (TC3) through a sixth silicide (SI6).A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected to a second thermocouple (TC42) of the fourth thermocouple (TC4) through a seventh silicide (SI7).A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) by an eighth silicide (SI8).The second thermocouple (TC 12) of the first thermocouple (TC 1) is electrically connected to the first thermocouple (TC 21) of the second thermocouple (TC 2) via a ninth silicide (SI 9).The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicide (SI10).The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicide (SI11).The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicide (SI12).The first thermocouple (TC 11) of the first thermocouple (TC 1) is electrically connected to a first pad (P 1) through a thirteenth silicide (SI 13).The second thermocouple (TC 52) of the fifth thermocouple (TC 5) is electrically connected to a second pad (P 2) through fourteenth silicide (SI 14).A temperature-dependent voltage (UT) is present between the first connection pad (P 1) and the second connection pad (P 2).The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2), and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first type of doping is illustrated in FIG. 8 by vertically dashed lines. The first doping type may be a p- or an n-doping.The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2), and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first type of doping is illustrated in FIG. 8 by horizontal dashed lines. The second doping type is a p-doping when the first doping type is an n-doping. The second doping type is an n-doping when the first doping type is a p-doping.The shape and position of the thermocouples and the silicided regions is shown here only by way of example and can also be implemented differently.FIG. 10 shows a schematic view of FIG. 10FIG. 10 shows, by way of example, the improved layout of a series circuit of four thermocouple series circuits to form a thermopile according to the proposal. A thermocouple series circuit comprises in each case eight thermocouples connected in series. Next, the individual thermocouple series connections are described and then their series connection to form a thermopile, and the layout of the thermopile.The first thermocouple series circuit (S 1) comprises a first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and a second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and a third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and a fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and a fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and a sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and a seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and an eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) A THERMOCOUPLE series circuit (S1) and a first silicide (S1S1) of the first thermocouple series circuit (S1) and a second silicide (S1S2) of the first thermocouple series circuit (S1) and a third silicide (S1S3) of the first thermocouple series circuit (S1) and a fourth silicide (S1S4) of the first thermocouple series circuit (S1) and a fifth silicide (S1S5) of the first thermocouple series circuit (S1) and a sixth silicide (S1S6) of the first thermocouple series circuit (S1) and a seventh silicide (S1S7) of the first thermocouple series circuit (S1).The second thermocouple series circuit (S 2) comprises a first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) and a second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) and a third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) and a fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) and a fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) and a sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) and a seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) and an eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) A THERMOCOUPLE series circuit (S2) and a first silicide (S2S1) of the second thermocouple series circuit (S2) and a second silicide (S2S2) of the second thermocouple series circuit (S2) and a third silicide (S2S3) of the second thermocouple series circuit (S2) and a fourth silicide (S2S4) of the second thermocouple series circuit (S2) and a fifth silicide (S2S5) of the second thermocouple series circuit (S2) and a sixth silicide (S2S6) of the second thermocouple series circuit (S2) and a seventh silicide (S2S7) of the second thermocouple series circuit (S2).The third thermocouple series circuit (S 3) comprises a first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) and a second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) and a third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) and a fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) and a fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) and a sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) and a seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) and an eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) A THERMOCOUPLE series circuit (S3) and a first silicide (S3S1) of the third thermocouple series circuit (S3) and a second silicide (S3S2) of the third thermocouple series circuit (S3) and a third silicide (S3S3) of the third thermocouple series circuit (S3) and a fourth silicide (S3S4) of the third thermocouple series circuit (S3) and a fifth silicide (S3S5) of the third thermocouple series circuit (S3) and a sixth silicide (S3S6) of the third thermocouple series circuit (S3) and a seventh silicide (S3S7) of the third thermocouple series circuit (S3).The fourth thermocouple series circuit (S 4) comprises a first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) and a second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) and a third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) and a fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) and a fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) and a sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) and a seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) and an eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) A THERMOCOUPLE series circuit (S4) and a first silicide (S4S1) of the fourth thermocouple series circuit (S4) and a second silicide (S4S2) of the fourth thermocouple series circuit (S4) and a third silicide (S4S3) of the fourth thermocouple series circuit (S4) and a fourth silicide (S4S4) of the fourth thermocouple series circuit (S4) and a fifth silicide (S4S5) of the fourth thermocouple series circuit (S4) and a sixth silicide (S4S6) of the fourth thermocouple series circuit (S4) and a seventh silicide (S4S7) of the fourth thermocouple series circuit (S4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) is electrically connected to the second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) by the first silicided (S 1S 1) of the first thermocouple series circuit (S 1). The second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) is electrically connected to the third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) by the second silicide (S 1S 2) of the first thermocouple series circuit (S 1). The third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) is electrically connected to the fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) by the third silicide (S 1S 3) of the first thermocouple series circuit (S 1). The fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) is electrically connected to the fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) by the fourth silicide (S 1S 4) of the first thermocouple series circuit (S 1). The fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) is electrically connected to the sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) by the fifth silicide (S 1S 5) of the first thermocouple series circuit (S 1). The sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) is electrically connected to the seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) by the sixth silicide (S 1S 6) of the first thermocouple series circuit (S 1). The seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) is electrically connected to the eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) by the seventh silicide (S 1S 7) of the first thermocouple series circuit (S 1).The first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) is electrically connected to the second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) by the first silicide (S 2S 1) of the second thermocouple series circuit (S 2). The second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2) is electrically connected to the third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) by the second silicide (S 2S 2) of the second thermocouple series circuit (S 2). The third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) is electrically connected to the fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) by the third silicide (S 2S 3) of the second thermocouple series circuit (S 2). The fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2) is electrically connected to the fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) by the fourth silicide (S 2S 4) of the second thermocouple series circuit (S 2). The fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2) is electrically connected to the sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) by the fifth silicide (S 2S 5) of the second thermocouple series circuit (S 2). The sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2) is electrically connected to the seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) by the sixth silicide (S 2S 6) of the second thermocouple series circuit (S 2). The seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2) is electrically connected to the eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) by the seventh silicide (S 2S 7) of the second thermocouple series circuit (S 2).The first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) is electrically connected to the second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) by the first silicide (S 3S 1) of the third thermocouple series circuit (S 3). The second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) is electrically connected to the third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) by the second silicide (S 3S 2) of the third thermocouple series circuit (S 3). The third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) is electrically connected to the fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) by the third silicide (S 3S 3) of the third thermocouple series circuit (S 3). The fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) is electrically connected to the fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) by the fourth silicide (S 3S 4) of the third thermocouple series circuit (S 3). The fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) is electrically connected to the sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) by the fifth silicide (S 3S 5) of the third thermocouple series circuit (S 3). The sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) is electrically connected to the seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) by the sixth silicide (S 3S 6) of the third thermocouple series circuit (S 3). The seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) is electrically connected to the eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) by the seventh silicide (S 3S 7) of the third thermocouple series circuit (S 3).The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) is electrically connected to the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) by the first silicide (S 4S 1) of the fourth thermocouple series circuit (S 4). The second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) is electrically connected to the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) by the second silicide (S 4S 2) of the fourth thermocouple series circuit (S 4). The third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) is electrically connected to the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) by the third silicide (S 4S 3) of the fourth thermocouple series circuit (S 4). The fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) is electrically connected to the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) through the fourth silicide (S 4S 4) of the fourth thermocouple series circuit (S 4). The fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) is electrically connected to the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) by the fifth silicide (S 4S 5) of the fourth thermocouple series circuit (S 4). The sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) is electrically connected to the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) by the sixth silicide (S 4S 6) of the fourth thermocouple series circuit (S 4). The seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) is electrically connected to the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) by the seventh silicide (S 4S 7) of the fourth thermocouple series circuit (S 4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) is electrically connected to a first connection pad (S 1P 1) of the first thermocouple series circuit (S 1) via fifteenth silicided (SI 15). The eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) is electrically connected to a first connection pad (S 4P 1) of the fourth thermocouple series circuit (S 4) via a nineteenth silicide (SI 19).The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) is electrically connected to the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2) via a sixteenth silicide (SI 16). The eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) is electrically connected to the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) via a seventeenth silicide (SI 17). The eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) is electrically connected to the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) via an eighteenth silicide (SI 18).The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3), and the third thermocouple (S3E3) of the third thermocouple series circuit (S3), and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3), and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3), and the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4), and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4), and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4), and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4), are heavily doped polysilicon of a first doping type. The first type of doping is represented in FIG. 10 by a dotted pattern. The first doping type may be a p- or an n-doping.The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3), and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3), and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3), and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3), and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4), and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4), and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4), and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4), are made of heavily doped polysilicon of a second doping type. The second type of doping is represented in Figure 10 by non-patterned stripes. The second doping type is an n-doping when the first doping type is a p-doping. The second doping type is a p-doping when the first doping type is an n-doping.The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) adjoins the first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1).The eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2) adjoins the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2).The eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) adjoins the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3).The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) adjoins the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4).The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and the second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and the third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and the fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and the fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and the sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and the seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and the eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) form a closed border of a border of a first thermocouple series circuit (S 1) The surface.The first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) form a closed border of the second thermocouple series circuit This is the area in which the first thermocouple series circuit (S 1) is located.The first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) form a closed border of the third thermocouple series circuit This is the area in which the second thermocouple series circuit (S 2) is located.The first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) and the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) and the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) and the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) and the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) and the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) and the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) and the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) form a closed border of the fourth thermocouple series circuit (S 4) The third thermocouple series circuit (S3) is located in the area.In the improved layout, regions of the same doping type are adjacent to each other.The first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1) and the first thermocouple (S 2E 1) of the second thermocouple series circuit (S 2), and the first thermocouple (S 3E 1) of the third thermocouple series circuit (S 3) and the first thermocouple (S 4E 1) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1) and the second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2), and the second thermocouple (S 3E 2) of the third thermocouple series circuit (S 3) and the second thermocouple (S 4E 2) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1) and the third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2) and the third thermocouple (S 3E 3) of the third thermocouple series circuit (S 3) and the third thermocouple (S 4E 3) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1) and the fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2), and the fourth thermocouple (S 3E 4) of the third thermocouple series circuit (S 3) and the fourth thermocouple (S 4E 4) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1) and the fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2), and the fifth thermocouple (S 3E 5) of the third thermocouple series circuit (S 3) and the fifth thermocouple (S 4E 5) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1) and the sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2), and the sixth thermocouple (S 3E 6) of the third thermocouple series circuit (S 3) and the sixth thermocouple (S 4E 6) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1) and the seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2), and the seventh thermocouple (S 3E 7) of the third thermocouple series circuit (S 3) and the seventh thermocouple (S 4E 7) of the fourth thermocouple series circuit (S 4) are adjacent to each other.The eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1) and the eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2), and the eighth thermocouple (S 3E 8) of the third thermocouple series circuit (S 3) and the eighth thermocouple (S 4E 8) of the fourth thermocouple series circuit (S 4) are adjacent to each other.FIG. 11 shows a schematic of FIG. 11FIG. 11 shows, by way of example, a possible structure for a proposed test structure for up to two proposed thermopiles by comparison of the temperature determined by the thermopiles to be tested with the temperature determined by a further, deviating thermosensitive sensor structure. By ellipses with dashed outline, the individual elements of the test structure are emphasized for more rapid understanding.Above a sixth diaphragm (MEM6), there is a first resistor (H1W1) of a first heating element (H1). The sixth membrane (MEM6) is made of a dielectric material, for example an oxide or a nitride. The sixth membrane (MEM6) may contain absorbers and / or absorber layers for infrared radiation. The sixth membrane (MEM6) is thermally insulated from the substrate below. The first resistor (H1W1) of the first heating element (H1) is of doped or undoped polysilicon and has an electrical resistance on the order of 2.5 Ω / cm 2.The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a first connection pad (H 1P 1) of the first heating element (H 1) by a first silicide (H 1S 1) of the first heating element (H 1). The first resistor (H 1W 1) of the first heating element (H 1) is electrically connected to a second connection pad (H 1P 2) of the first heating element (H 1) by a second silicide (H 1S 2) of the first heating element (H 1). The first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1) are not located above the thermally insulated sixth membrane (MEM 6). The first connection pad (H 1P 1) of the first heating element (H 1) and the second connection pad (H 1P 2) of the first heating element (H 1) are electrically connected to a voltage source or to further electronic components.Above the sixth membrane (MEM6) is a first thermopile (TP1). The first thermopile (TP 1) is constructed in the same manner as the thermopile shown in FIG. 9 and FIG. 8. The structure of the first thermopile (TP 1) is therefore not explained in more detail here. The first thermopile (TP 1) is electrically connected to a first terminal pad (TP 1P 1) of the first thermopile (TP 1). The interconnection is silicide. The first thermopile (TP 1) is electrically connected to a second terminal pad (TP 1P 2) of the first thermopile (TP 1). The interconnection is silicide. The first connection pad (TP 1P 1) of the first thermopile (TP 1) and the second connection pad (TP 1P 2) of the first thermopile (TP 1) are not above the thermally insulated sixth membrane (MEM 6). The first connection pad (TP 1P 1) of the first thermopile (TP 1) and the second connection pad (TP 1P 2) of the first thermopile (TP 1) can be electrically connected to a voltage measuring device or to further electronic components. A first voltage (UTP1) can be present between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).In FIG. 11, the first thermopile (TP 1) is shown by way of example on the right-hand side of the first resistor (H 1W 1) of the first heating element (H 1) and rotated by 90° with respect to the latter.Above the sixth membrane (MEM6) is a second thermopile (TP2). The second thermopile (TP 2) is constructed in the same manner as the thermopile shown in FIG. 9 and FIG. 8. The structure of the second thermopile (TP 2) is therefore not explained in more detail here. The second thermopile (TP 2) is electrically connected to a first terminal pad (TP 2P 1) of the second thermopile (TP 2). The interconnection is silicide. The second thermopile (TP 2) is electrically connected to a second terminal pad (TP 2P 2) of the second thermopile (TP 2). The interconnection is silicide. The first connection pad (TP 2P 1) of the second thermopile (TP 2) and the second connection pad (TP 2P 2) of the second thermopile (TP 2) are not above the thermally insulated sixth membrane (MEM 6). The first connection pad (TP 2P 1) of the second thermopile (TP 2) and the second connection pad (TP 2P 2) of the second thermopile (TP 2) can be electrically connected to a voltage measuring device or to further electronic components. A second voltage (UTP2) can be present between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).In FIG. 11, the second thermopile (TP 2) is exemplarily drawn on the left side of the first resistor (H 1W 1) of the first heater (H 1) and opposite to the first thermopile (TP 1).The test structure according to the invention comprises a further deviating thermosensitive sensor structure for determining the temperature set by the first heating element (H1). For this purpose, a series circuit of four diodes is used by way of example.Above the sixth membrane (MEM6) is a first control element (K1). The first control element (K1) comprises a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1).The first diode (K 1D 1) of the first control element (K 1) and the second diode (K 1D 2) of the first control element (K 1) and the third diode (K 1D 3) of the first control element (K 1) and the fourth diode (K 1D 4) of the first control element (K 1) are pn diodes or pin diodes made of polysilicon.The first diode (K 1D 1) of the first control element (K 1) is electrically connected to a first connection pad (K 1P 1) of the first control element (K 1) by a first silicide (K 1S 1) of the first control element (K 1). The fourth diode (K 1D 4) of the first control element (K 1) is electrically connected to a second connection pad (K 1P 2) of the first control element (K 1) by a second silicide (K 1S 2) of the first control element (K 1).The first connection pad (K 1P 1) of the first control element (K 1) and the second connection pad (K 1P 2) of the first control element (K 1) can be electrically connected to a voltage measuring device or to further electronic components. A third voltage (UK) can be present between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).The first control element (K 1) is shown in FIG. 11 opposite the first resistor (H 1W 1) of the first heating element (H 1). However, a different positioning of the first control element (K 1) and the first thermopile (TP 1) and the first resistor (H 1W 1) of the first heating element (H 1) and the second thermopile (TP 2) relative to one another would also be possible.FIG. 12 shows a schematic view of FIG. 12Figure 12 shows a Halios device according to the prior art (SdT). Herein, a proposed thermopile can be used as a receiver. A Halios system is composed of at least one Halios device shown in FIG. 12.An infrared LED is used as a transmitter (H). The transmitter (H) emits an optical transmission signal (OS 1). A transmission signal (S5) is generated by a generator (G). The transmission signal (S 5) modulates the amplitude of the transmitter (H) and thus the amplitude of the optical transmission signal (OS 1). The optical transmission signal (OS 1) is reflected and transmitted at an object (O) to be detected. A reflected optical transmission signal (OS3) is received by a receiver (D). The receiver (D) can comprise at least one proposed thermopile. The receiver (D) converts the reflected optical transmission signal (OS 3) into a reception signal (S 0). The received signal (S0) is amplified by a preamplifier (V) to form an amplified received signal (S01). The amplified reception signal (S 01) and the transmission signal (S 5) are multiplied by a first multiplier (MP 1) to form a multiplied reception signal (S 9). The multiplied received signal (S9) is filtered in a filter (F) to form a filter output signal (S10). The filter (F) may be a low pass or band pass filter. The filter output signal (S10) is amplified by a postamplifier (VN) to an amplified filter output signal (S14). The amplified output signal (S14) can be tapped at the device shown. Within the device, the amplified filter output signal (S14) is multiplied at a third multiplier (MP3) with the inverted transmission signal (S5) to form a compensation feed bias signal (S6). The transmission signal (S5) is inverted by multiplication by "-1" at a second multiplier (MP2).The compensation feed pre-signal (S6) is summed at a summer (A) with an offset (B) to form a compensation feed signal (S7). The addition with the offset (B) guarantees a positive value range of the compensation signal (S7). The compensation feed signal (S7) controls a compensation transmitter (K). The compensation transmitter (K) is an infrared LED. The compensation transmitter (K) emits an optical compensation signal (OS2). The optical compensation signal (OS2) is likewise received by the receiver (D) and superimposed with the reflected optical transmission signal (OS3).GlossarInfrared - Wikipedia defines infrared radiation as "... Light having a wavelength between 780 nm and 1 mm... This corresponds to a frequency range from 300 GHz to 400 THz."Metallic--Metallic in the sense of this disclosure is a substance in which valence and conduction bands overlap in at least one direction of the reciprocal lattice at room temperature.Nonmetallic--Nonmetallic in the sense of this disclosure refers to a substance which does not meet the definition of "metallic" given here, i.e. in which valence and conduction bands do not overlap at room temperature. Nonmetallicity of a material can be demonstrated in particular by the fact that the electrical conductivity of the material also increases as the temperature rises.Metal layer-free--For the purposes of this disclosure, metal layer-free as a property for a device or a device part means that this device or this device part is not metallic, that is to say does not have any metallic layers, but rather only non-metallic layers.Poor thermal conductivity - For the purposes of this disclosure, a poor thermal conductivity of a material is characterized in that the thermal conductivity of the material having a poor thermal conductivity is less than the thermal conductivity of the substrate by a factor 1 / N where N>3 and / or N>10 and / or N>100 and / or N>103 and / or N>104 and / or N>105.Heavily n-doped - Wikipedia defines heavily n-doped in silicon as a ratio of 1 donor / 10 4 atoms.Heavily p-doped - Wikipedia defines heavily p-doped in silicon as a ratio of 1 acceptor / 10 4 atoms.Thermal effect-Thermal effect is understood to mean the change in temperature. An identical thermal effect on two functional elements is present if the difference in the temperature change is less than 20° C. and / or better less than 10° C. and / or better less than 5° C. and / or better less than 2° C. and / or better less than 1° C. and / or better less than 0.5° C. and / or better less than 0.2° C. and / or better less than 0.1° C.List of reference charactersA summer; B positive offset; BG1 width (BG1) of the first trench (G1); BG2 width (BG2) of the second trench (G2); BG3 width (BG3) of the third trench (G3); BG4 width (BG4) of the fourth trench (G4); BG5 width (BG5) of the fifth trench (G5); BG6 width (BG6) of the sixth trench (G6); BG7 width (BG7) of the seventh trench (G7); BG8 width (BG8) of the eighth trench (G8); BG9 width (BG9) of the ninth trench (G9); BG10 width (BG10) of the tenth trench (G10); C1 first cavity; C2 second cavity; C3 third cavity; C4 fourth cavity; C5 fifth cavity; D receiver; d1 first distance; d2 second distance; d3 third distance; d4 fourth distance; d5 fifth distance; d6 sixth distance; d7 seventh distance; d8 eighth distance; d9 ninth distance; d10 tenth distance; d11 eleventh distance; d12 twelfth distance; d13 thirteenth distance; d14 fourteenth distance; d15 fifteenth distance; d16 sixteenth distance; d17 seventeenth distance; d18 eighteenth distance; d19 nineteenth distance; d20 twentieth distance; G generator; G1 first trench; G2 second trench; G3 third trench; G4 fourth trench; G5 fifth trench; G6 sixth trench; G7 seventh trench; G8 eighth trench; G9 ninth trench; G10 tenth trench; H transmitter; H1 first heating element; H1P1 first connection pad (H1P1) of the first heating element (H1); H1P2 second connection pad (H1P2) of the first heating element (H1); H1S1 first silicided (H1S1) of the first heating element (H1); H1S2 second silicide (H1S2) of the first heating element (H1); H1W1 first resistor (H1W1) of the first heating element (H1); HG1 height (HG1) of the first trench (G1); HG2 height (HG2) of the second trench (G2); HG3 height (HG3) of the third trench (G3); HG4 height (HG4) of the fourth trench (G4); HG5 height (HG5) of the fifth trench (G5); HG6 height (HG6) of the sixth trench (G6); HG7 height (HG7) of the seventh trench (G7); HG8 height (HG8) of the eighth trench (G8); HG9 height (HG9) of the ninth trench (G9); HG10 height (HG10) of the tenth trench (G10); HSF1 first rear side surface; HSF2 second rear side surface; HSF3 third rear side surface; HSF4 fourth rear side surface; HSF5 fifth rear side surface; I1 first insulation layer; I2 second insulation layer; I3 third insulation layer; I4 fourth insulation layer; I5 fifth insulation layer; I6 sixth insulation layer; I7 seventh insulation layer; I8 eighth insulation layer; I9 ninth insulation layer; I10 tenth insulation layer; K compensation transmitter; K1 first control element; K1D1 first diode (K1D1) of the first control element (K1); K1D2 second diode (K1D2) of the first control element (K1); K1D3 third diode (K1D3) of the first control element (K1); K1D4 fourth diode (K1D4) of the first control element (K1); K1P1 first connection pad (K1P1) of the first control element (K1); K1P2 second connection pad (K1P2) of the first control element (K1); K1S1 first silicide formation (K1S1) of the first control element (K1); K1S2 second silicide (K1S2) of the first control element (K1); LG1 length (LG1) of the first trench (G1); LG2 length (LG2) of the second trench (G2); LG3 length (LG3) of the third trench (G3); LG4 length (LG4) of the fourth trench (G4); LG5 length (LG5) of the five trench (G5); LG6 length (LG6) of the sixth trench (G6); LG7 length (LG7) of the seventh trench (G7); LG8 length (LG8) of the eighth trench (G8); LG9 length (LG9) of the ninth trench (G9); LG10 length (LG10) of the tenth trench (G10); LSF1 first left side face; LSF2 second left side face; LSF3 third left side face; LSF4 fourth left side face; LSF5 fifth left side face; M1 first metallic compound; M2 second metallic compound; M3 third metallic compound; M4 fourth metallic compound; MP1 first multiplier; MP2 second multiplier; MP3 third multiplier; MEM1 first diaphragm; MEM2 second diaphragm; MEM3 third diaphragm; MEM4 fourth diaphragm; MEM5 fifth diaphragm; MEM6 sixth diaphragm; O object to be detected; OS1 optical transmission signal; OS2 optical compensation transmission signal; OS3 reflected optical transmission signal; P1 first pad; P2 second pad; P3 third pad; P4 fourth pad; PS1 first polysilicon layer; RSF1 first right side surface; RSF2 second right side surface; RSF3 third right side surface; RSF4 fourth right side surface; RSF5 fifth right side surface; S0 reception signal; S01 amplified reception signal; S1 first thermocouple series circuit; S 1E 1 first thermocouple (S 1E 1) of the first thermocouple series circuit (S 1); S 1E 2 second thermocouple (S 1E 2) of the first thermocouple series circuit (S 1); S 1E 3 third thermocouple (S 1E 3) of the first thermocouple series circuit (S 1); S 1E 4 fourth thermocouple (S 1E 4) of the first thermocouple series circuit (S 1); S 1E 5 fifth thermocouple (S 1E 5) of the first thermocouple series circuit (S 1); S 1E 6 sixth thermocouple (S 1E 6) of the first thermocouple series circuit (S 1); S 1E 7 seventh thermocouple (S 1E 7) of the first thermocouple series circuit (S 1); S 1E 8 eighth thermocouple (S 1E 8) of the first thermocouple series circuit (S 1); S 1P 1 first connection pad (S 1P 1) of the first thermocouple series circuit (S 1); S 1S 1 first silicide formation (S 1S 1) of the first thermocouple series circuit (S 1); S 1S 2 second silicide formation (S 1S 2) of the first thermocouple series circuit (S 1); S 1S 3 third silicide formation (S 1S 3) of the first thermocouple series circuit (S 1); S 1S 2; S1S4 fourth silicided (S1S4) of the first thermocouple series circuit (S1); S1S5 fifth silicided (S1S5) of the first thermocouple series circuit (S1); S1S6 sixth silicided (S1S6) of the first thermocouple series circuit (S1); S1S7 seventh silicided (S1S7) of the first thermocouple series circuit (S1); S1S8 eighth silicided (S1S8) of the first thermocouple series circuit (S1); S2 second thermocouple series circuit; S2E1 first thermocouple (S2E1) of the second thermocouple series circuit (S2); S 2E 2 second thermocouple (S 2E 2) of the second thermocouple series circuit (S 2); S 2E 3 third thermocouple (S 2E 3) of the second thermocouple series circuit (S 2); S 2E 4 fourth thermocouple (S 2E 4) of the second thermocouple series circuit (S 2); S 2E 5 fifth thermocouple (S 2E 5) of the second thermocouple series circuit (S 2); S 2E 6 sixth thermocouple (S 2E 6) of the second thermocouple series circuit (S 2); S 2E 7 seventh thermocouple (S 2E 7) of the second thermocouple series circuit (S 2); S 2E 8 eighth thermocouple (S 2E 8) of the second thermocouple series circuit (S 2); S 2S 1 first silicided (S 2S 1) of the second thermocouple series circuit (S 2); S 2S 2 second silicided (S 2S 2) of the second thermocouple series circuit (S 2); S 2S 3 third silicided (S 2S 3) of the second thermocouple series circuit (S 2); S 2S 4 fourth silicided (S 2S 4) of the second thermocouple series circuit (S 2); S 2S 5 fifth silicided (S 2S 5) of the second thermocouple series circuit (S 2); S2S6 sixth silicided (S2S6) of the second thermocouple series circuit (S2); S2S7 seventh silicided (S2S7) of the second thermocouple series circuit (S2); S2S8 eighth silicided (S2S8) of the second thermocouple series circuit (S2); S3 third thermocouple series circuit; S3E1 first thermocouple (S3E1) of the third thermocouple series circuit (S3); S3E2 second thermocouple (S3E2) of the third thermocouple series circuit (S3); S3E3 third thermocouple (S3E3) of the third thermocouple series circuit (S3); S3E4 fourth thermocouple (S3E4) of the third thermocouple series circuit (S3); S3E5 fifth thermocouple (S3E5) of the third thermocouple series circuit (S3); S3E6 sixth thermocouple (S3E6) of the third thermocouple series circuit (S3); S3E7 seventh thermocouple (S3E7) of the third thermocouple series circuit (S3); S3E8 eighth thermocouple (S3E8) of the third thermocouple series circuit (S3); S3S1 first silicided (S3S1) of the third thermocouple series circuit (S3); S3S2 Second silicide formation (S3S2) of the third thermocouple series circuit (S3); S3S3 Third silicide formation (S3S3) of the third thermocouple series circuit (S3); S3S4 Fourth silicide formation (S3S4) of the third thermocouple series circuit (S3); S3S5 Fifth silicide formation (S3S5) of the third thermocouple series circuit (S3); S3S6 Sixth silicide formation (S3S6) of the third thermocouple series circuit (S3); S3S7 Seventh silicide formation (S3S7) of the third thermocouple series circuit (S3); S3S8 eighth silicided (S3S8) of the third thermocouple series circuit (S3); S4 fourth thermocouple series circuit; S4E1 first thermocouple (S4E1) of the fourth thermocouple series circuit (S4); S4E2 second thermocouple (S4E2) of the fourth thermocouple series circuit (S4); S4E3 third thermocouple (S4E3) of the fourth thermocouple series circuit (S4); S4E4 fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4); S4E5 fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4); S4E6 sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4); S4E7 seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4); S4E8 eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4); S4P1 first connection pad (S4P1) of the fourth thermocouple series circuit (S4); S4S1 first silicided (S4S1) of the fourth thermocouple series circuit (S4); S4S2 second silicided (S4S2) of the fourth thermocouple series circuit (S4); S4S3 Third silicided (S4S3) of the fourth thermocouple series circuit (S4); S4S4 Fourth silicided (S4S4) of the fourth thermocouple series circuit (S4); S4S5 Fifth silicided (S4S5) of the fourth thermocouple series circuit (S4); S4S6 Sixth silicided (S4S6) of the fourth thermocouple series circuit (S4); S4S7 Seventh silicided (S4S7) of the fourth thermocouple series circuit (S4); S4S8 Eighth silicided (S4S8) of the fourth thermocouple series circuit (S4); S5 Transmission signal; S6 Compensation feed presignal; S7 compensation feed signal; S9 multiplied transmit signal; S10 filter output signal; S14 amplified filter output signal; SdT prior art; SI1 first silicide; SI2 second silicide; SI3 third silicide; SI4 fourth silicide; SI5 fifth silicide; SI6 sixth silicide; SI7 seventh silicide; SI8 eighth silicide; SI9 ninth silicide; SI10 tenth silicide; SI11 eleventh silicide; SI12 twelfth silicide; SI13 thirteenth silicide; SI14 fourteenth silicide; SI15 fifteenth silicide; SI16 sixteenth silicide; SI17 seventeenth silicide; SI18 eighteenth suicide; SI19 nineteenth suicide; SI20 twentieth suicide; SI21 twenty-first suicide; SUB1 first substrate; SUB2 second substrate; SUB3 third substrate; SUB4 fourth substrate; SUB5 fifth substrate; TC1 first thermocouple; TC11 first thermocouple (TC11) of first thermocouple (TC1); TC12 second thermocouple (TC12) of first thermocouple (TC1); TC2 second thermocouple; TC21 first thermocouple (TC21) of second thermocouple (TC2); TC22 second thermocouple (TC22) of second thermocouple (TC2); TC3 third thermocouple; TC31: first thermocouple (TC31) of the third thermocouple (TC3); TC32: second thermocouple (TC32) of the third thermocouple (TC3); TC4: fourth thermocouple; TC41: first thermocouple (TC41) of the fourth thermocouple (TC4); T42: second thermocouple (TC42) of the fourth thermocouple (TC4); TC5: fifth thermocouple; TC51: first thermocouple (TC51) of the fifth thermocouple (TC5); TC52: second thermocouple (TC52) of the fifth thermocouple (TC5); TE1: first thermocouple; TE2: second thermocouple; TE3: third thermocouple; TE4: fourth thermocouple; TE5: fifth thermocouple; TE6: sixth thermocouple; TE7 seventh thermocouple; TE8 eighth thermocouple; TE9 ninth thermocouple; TE10 tenth thermocouple; TE11 eleventh thermocouple; TE12 twelfth thermocouple; TE13 thirteenth thermocouple; TE14 fourteenth thermocouple; TE15 fifteenth thermocouple; TE16 sixteenth thermocouple; TE17 seventeenth thermocouple; TE18 eighteenth thermocouple; TE19 nineteenth thermocouple; TE20 twentieth thermocouple; TE21 twenty-first thermocouple; TE22 twenty-second thermocoupleTP1 first thermocouple (TP1); TP1P1 first terminal pad (TP1P1) of first thermocouple (TP1); tp1P2 second connection pad (TP1P2) of the first thermopile (TP1); TP2 second thermopile (TP2); TP2P1 first connection pad (TP2P1) of the second thermopile (TP2); TP2P2 second connection pad (TP2P2) of the second thermopile (TP2); UT temperature-dependent voltage; UH adjustable voltage; UK third voltage; UTP1 first voltage; UTP2 second voltage; V preamplifier; VN postamplifier; W1 first well;List of the cited documentsUS 2014 / 0 015 089 A1US 2003 / 0147449 A1 ^DE 601 17 929 T2DE 10 2014 013 482 B4DE 10 2015 015 389 A1DE 10 2017 100 308 B3EP 1913420 B1EP 2 817 657 B,DE 10 001 955 A1,DE 10 001 943 C1,DE 10 346 741 B3,EP 2 936 201 A1,WO 2007 012 502 A1,EP 1 671 160 A1,EP 1410 507 A1,EP 1 435 509 A1,EP 1 269 929 A1,EP 1 258 084 A,EP 1 480 015 A1,EP 1 579 307 B1,DE 10 2005 045 993 B4,EP 0 706 648 A1,EP 2 016 480 A2,EP 2 783 232 B1,DE 11 2013 002 097 A5,EP 2 679 982 A1,DE 10 2013 013 664 B3,DE 10 2012 010 627 A1,DE 10 2013 019 660 A1,DE 10 2013 000 376 A1,EP 2 405 283 B1,DE 10 2015 002 271 A1,DE 10 2015 006 174 B3,DE 10 2014 019 172 A1,DE 10 2015 015 389 A1,DE 10 2017 100 308 B3,DE 10 2017 100 306 A1

Claims

Device for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a second thermopile (TP2) and a first control element (K1), wherein the first thermopile (TP 1) comprises at least one thermocouple and wherein the first thermopile (TP 1) is metal-layer-free and wherein electrical connections are realized by silicide formation in the first thermopile (TP 1), and wherein the first thermopile (TP 1) is electrically connected by silicide formation to a first connection pad (TP 1P 1) of the first thermopile (TP 1), and wherein the first thermopile (TP 1) is electrically connected by silicide formation to a second connection pad (TP 1P 2) of the first thermopile (TP 1), and wherein the second thermopile (TP 2) comprises at least one thermocouple, and wherein the second thermopile (TP 2) is metal-layer-free and wherein in the second second thermopile (TP 2) is metal-layer-free Thermopile (TP2) electrical connections are realized by silicided connection and wherein the second thermopile (TP2) is electrically connected by silicided connection to a first connection pad (TP2P1) of the second thermopile (TP2) and wherein the second thermopile (TP2) is electrically connected by silicided connection to a second connection pad (TP2P2) of the second thermopile (TP2) and wherein the first control element (K1) is a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1), and wherein the first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1) are pn diodes or pin diodes made of polysilicon, and wherein the first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicide (K1S1) of the first control element (K1), and wherein the fourth diode (K1D4) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1), and wherein the fourth diode (K1D4) of the first control element. The first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicide formation (K1S2) of the first control element (K1).Device for testing at least one silicided thermopile, characterized in that it is a device according to Claim 1.Device for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a first control element (K1), wherein the first thermopile (TP 1) comprises at least one thermocouple and wherein the first thermopile (TP 1) is metal-layer-free and wherein electrical connections are realized by silicide formation in the first thermopile (TP 1), and wherein the first thermopile (TP 1) is electrically connected by silicide formation to a first connection pad (TP 1P 1) of the first thermopile (TP 1), and wherein the first thermopile (TP 1) is electrically connected by silicide formation to a second connection pad (TP 1P 2) of the first thermopile (TP 1), and wherein the first control element (K 1) is a series circuit of a first diode (K 1D 1) of the first control element (K 1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1), and wherein the first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1), and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1) are pn diodes or pin diodes made of polysilicon, and wherein the first diode (K1D1) of the first control element (K1) is made of polysilicon by a first silicide (K1S1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1), and wherein the fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicide (K1S2) of the first control element (K1).Device for testing at least one silicided thermopile, characterized in that it is a device according to Claim 3.Device according to one or more of the preceding claims 2 or 4, wherein the first heating element (H1) and the first control element (K1) are arranged opposite each other.The device according to claim 2, wherein the straight line on which the first thermopile (TP1) and the second thermopile (TP2) are arranged orthogonally intersects the straight line on which the first heating element (H1) and the first control element (K1) are arranged.Method for testing at least one thermopile with a device according to Claim 2, wherein the temperature increase at the first resistor (H1W1) of the first heating element (H1), which temperature increase occurs as a result of thermal power loss in the first (H1W1) of the first heating element (H1), is adjusted by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1), and wherein a first voltage (UTP1) is measured between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1), and wherein a first voltage (UTP1) is measured between the first connection pad (TP2P1) of the second thermopile (TP2) and A second voltage (UTP2) is measured in the second connection pad (TP2P2) of the second thermopile (TP2), and wherein the first voltage (UTP1) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1), and wherein the second voltage (UTP2) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1), and wherein a third voltage (UK) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1), and wherein between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) the third voltage (UK) is measured and / or wherein the functionality of the first thermopile (TP1) and the second thermopile (TP2) is checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK).Method for testing at least one thermopile with a device according to Claim 4, wherein the temperature increase at the first resistor (H1W1) of the first heating element (H1) arising as a result of thermal power loss in the first resistor (H1W1) of the first heating element (H1) is adjusted by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1), and wherein a first voltage (UTP1) is measured between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1), and wherein the first voltage (UTP1) is measured by the temperature increase at the first resistor (H1W1) of the first heating element (H1) is dependent and wherein a third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) and / or wherein the first voltage (UTP1) and the third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1), depending on the temperature increase at the first resistor (H1W1) of the first heating element (H1), and wherein the functionality of the first thermopile (TP1) is checked by comparing the first voltage (UTP1) with the third voltage (UK).

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