METHOD FOR MANUFACTURING RESISTIVE DIRECT ACCESS STORAGE DEVICES WITH MANIPULATED ELECTRONIC DEFECTS
DE602022039627T2Active Publication Date: 2026-07-08
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Patent Information
- Application Number
- DE602022039627
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Priority Date
- 2022-04-08
- Filing Date
- 2022-05-12
- Publication Date
- 2026-07-08
- Estimated Expiration
- 2042-05-12
AI Technical Summary
Technical Problem
Conventional RRAM devices face challenges in achieving high resistance and efficient scaling down for in-memory computing applications due to filament size limitations and oxygen migration issues, leading to device failures and volatile operations.
Method used
The fabrication of RRAM devices includes a defect engineering layer with chemically stable materials to generate electronic defects in the switching oxide layer, using alloys like tantalum and other metals to trap and release oxygen, reducing filament size and operation voltages.
Benefits of technology
This approach enhances RRAM performance by enabling high resistance, low-power operations, and efficient scaling, with improved linearity and endurance for in-memory computing applications.
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