Salt used as acid generator

The novel salt (Ia) addresses the resolution and exposure margin issues in chemically amplified photoresist compositions by enhancing the performance of acid generators, resulting in improved pattern formation in semiconductor microfabrication.

JP2010248174AInactive Publication Date: 2010-11-04SUMITOMO CHEM CO LTD
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Patent Information

Application Number
JP2010062109
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2009-03-26
Filing Date
2010-03-18
Publication Date
2010-11-04
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Conventional acid generators in chemically amplified photoresist compositions do not provide sufficient resolution and exposure margin for pattern formation in semiconductor microfabrication.

Method used

A novel salt represented by formula (Ia) is used as an acid generator, comprising specific organic groups and counterions, incorporated into a chemically amplified photoresist composition along with a resin having acid-labile groups, and optionally combined with basic compounds to enhance performance.

Benefits of technology

The novel salt (Ia) enables the formation of patterns with improved resolution and exposure margin in semiconductor microfabrication, demonstrating superior performance compared to conventional acid generators.

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Abstract

PROBLEM TO BE SOLVED: To provide a salt or the like used as an acid generator contained in a photoresist composition which forms a pattern having excellent resolution and exhibiting excellent exposure margin.SOLUTION: The salt is represented by formula (Ia). In formula (Ia), Q<SP>1< / SP>and Q<SP>2< / SP>each independently represent a fluorine atom or a 1-6C perfluoroalkyl group, R<SP>1< / SP>represents a 5-42C organic group having a β-ketoester structure and A<SP>+< / SP>represents an organic counter ion.
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