Display device

Abstract

To provide a thin touch panel, a touch panel with a simple structure, a touch panel which can be easily incorporated in an electronic apparatus, or a touch panel having a small number of parts.SOLUTION: The touch panel includes pixel electrodes arranged in a matrix, a plurality of signal lines, a plurality of scan lines, a plurality of first wires extending in a direction parallel to the signal line, and a plurality of second wires extending in a direction parallel to the scan line. Some of the first wires and the second wires function as a pair of electrodes constituting a touch sensor. The first wires and the second wires have stripe or mesh shapes, and are located between two adjacent pixel electrodes in plane view.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention relates to an input device. One aspect of the present invention relates to a display device. TECHNICAL FIELD One embodiment of the present invention relates to an input / output device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The method can be given as an example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. Semiconductor elements such as transistors, semiconductor circuits, computing devices, memory The device is one aspect of a semiconductor device. power devices, input / output devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.) Some of the equipment and electronic devices include semiconductor devices. [Background technology]

[0004] In recent years, display devices equipped with touch sensors as position input means have come into practical use. A display device equipped with a touch sensor is called a touch panel or touch screen. For example, mobile information terminals equipped with touch panels include smartphones, There are bullet terminals, etc.

[0005] One type of display device is a liquid crystal display device that includes a liquid crystal element. The transistors are arranged in a trix shape and used as switching elements connected to each pixel electrode. Active matrix type liquid crystal display devices using such a liquid crystal display device have been attracting attention.

[0006] For example, a metal oxide channel-type switching element is used to connect to each pixel electrode. Active matrix type liquid crystal display devices using transistors as a region are known. (Patent Document 1, Patent Document 2).

[0007] Liquid crystal display devices are broadly classified into two types: a transmissive type and a reflective type.

[0008] Transmissive LCD devices use backlights such as cold cathode fluorescent lamps or LEDs to project light onto the LCD. By utilizing the optical modulation effect of the backlight, the light from the backlight passes through the liquid crystal and is emitted to the outside of the liquid crystal display device. Select the output state and non-output state, display light and dark, and The above are combined to display an image.

[0009] In addition, a reflective liquid crystal display device utilizes the optical modulation effect of liquid crystal to reflect external light, i.e., incident light, A state in which the light is reflected by the pixel electrode and output to the outside of the device, and a state in which the incident light is not output to the outside of the device By selecting the light and dark, and combining them, you can display the image. This is what happens.

[0010] Other display devices include organic EL (Electro Luminescence) Light emitted by elements and light emitting diodes (LEDs) Examples of such devices include light-emitting devices equipped with light-emitting elements, and electronic paper that displays images using electrophoresis. do.

[0011] Patent Document 3 discloses a flexible light-emitting device using an organic EL element. . [Prior art documents] [Patent documents]

[0012] [Patent Document 1] JP 2007-123861 A [Patent Document 2] JP 2007-96055 A [Patent Document 3] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0013] The user interface on the display panel is to touch the screen with a finger or a stylus. There is a demand for touch panels that can accept input via touch.

[0014] In addition, there is a demand for electronic devices to which touch panels are applied to be thinner and lighter. Therefore, there is a demand for thinner and lighter touch panels.

[0015] For example, a touch panel may be configured by using a substrate having a touch sensor on the display surface side of a display panel. However, in such a configuration, There were problems such as the inability to make the panel thinner and the increased number of parts.

[0016] An object of one embodiment of the present invention is to provide a thin touch panel. Another object of the present invention is to provide a touch panel having a simplified structure. One of the objectives is to provide a touch panel that is easy to install. Another object of the present invention is to provide a lightweight touch panel. Another object of the present invention is to provide a touch panel with high detection sensitivity. It shall be one.

[0017] Alternatively, one of the objectives is to provide a new input device, output device, input / output device, etc. The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment of the present invention to solve all of these problems. It is possible to extract other problems from the description of the claims, etc. [Means for solving the problem]

[0018] One embodiment of the present invention is a liquid crystal display having a display portion, a signal line, a scanning line, a first wiring, and a second wiring. The display unit has a plurality of pixel electrodes. The plurality of pixel electrodes include a first The signals are arranged in a matrix along a first direction and a second direction intersecting the first direction. The lines are provided extending in a first direction, and the scan lines are provided extending in a second direction. The first wiring is provided to extend in a first direction. The second wiring is provided to extend in a second direction. The first wiring has a first portion parallel to the signal line, and the first portion is The second wiring is disposed between two pixel electrodes adjacent to each other in the second direction. The second portion includes two pixels adjacent to each other in a first direction in a plan view. Located between the electrodes.

[0019] In the above, the first wiring does not intersect with the signal line in a portion overlapping with the display unit, It is preferable that the second wiring does not intersect with the scanning line in the portion overlapping with the display section. In this case, the signal lines and the first wiring are formed by processing the same conductive film, and the scanning lines and the second wiring are formed by processing the same conductive film. It is preferable that the first and second conductive layers are formed by processing the same conductive film.

[0020] Alternatively, the first wiring is formed by processing the same conductive film as the signal line, and the second wiring is formed by processing the same conductive film as the signal line. A third portion formed by processing the same conductive film as the signal line, and a second portion formed by processing the same conductive film as the scanning line. and a fourth portion formed by the signal line. Alternatively, it is preferable that the first wiring intersects with the second wiring.

[0021] Alternatively, the second wiring is formed by processing the same conductive film as the scanning line, and the first wiring is formed by processing the signal line. The fifth portion is formed by processing the same conductive film as the signal line, and the fifth portion is formed by processing the same conductive film as the scanning line. and a sixth portion formed by the scanning line. Alternatively, it is preferable that the first wiring intersects with the second wiring.

[0022] Alternatively, the first wiring has a seventh portion that is parallel to the scanning line and intersects with the signal line. In this case, it is preferable that the seventh portion is located between two pixel electrodes adjacent to each other in the first direction. The second wiring is preferably arranged in an eighth direction parallel to the signal lines and crossing the scanning lines. The eighth portion preferably has a portion between two pixel electrodes adjacent in the second direction. Preferably located in between.

[0023] In this case, the first wiring is a mesh that surrounds one or more of the pixel electrodes in a plan view. In addition, the second wiring preferably has a shape similar to that of one or more other pixels in plan view. It is preferable that the electrode has a mesh shape surrounding the element electrodes.

[0024] In the above, the first portion of the first wiring, the eighth portion of the second wiring, and the signal line are It is preferable that the seventh portion of the first wiring is formed by processing the same conductive film. The second portion of the second wiring and the scanning line are formed by processing the same conductive film. is preferred.

[0025] In the above, either the first wiring or the second wiring is the same as the scanning line or the signal line. It is preferable that the first wiring or the second wiring is formed by processing a conductive film. The other one is preferably formed by processing a conductive film different from that of the scanning line and the signal line. At this time, the other of the first wiring or the second wiring is formed by processing the same conductive film as the pixel electrode. It is preferable that the above-mentioned structure is formed.

[0026] Alternatively, in the above, the first wiring is formed by processing a conductive film different from that of the scanning line and the signal line. It is preferable that the second wiring is formed of a different conductor from the scanning line and the signal line. It is preferable that the first wiring or the second wiring is formed by processing a conductive film. Alternatively, the first wiring and the second wiring are formed by processing the same conductive film as the pixel electrode. It is preferable that

[0027] In the above, the touch panel is a liquid crystal element having a pixel electrode, a liquid crystal, and a common electrode. It is preferable to have children.

[0028] At this time, the touch panel includes a first substrate, a second substrate, a first polarizing plate, a second polarizing plate, It is preferable that the liquid crystal display device has a backlight, a first polarizing plate, and a backlight. The substrate, the second substrate, and the second polarizing plate are preferably laminated in this order. At this time, the signal lines, the scanning lines, the first wiring, the second wiring, and the pixel electrodes are disposed on the second substrate of the first substrate. It is preferable that the light emitting element is provided on the substrate side.

[0029] Alternatively, in the above, the touch panel has a pixel electrode, an EL layer, and a common electrode. It is preferable to have a light emitting element.

[0030] In this case, the touch panel preferably has a first substrate, a second substrate, and a polarizing plate. It is also preferable that the polarizing plate, the first substrate, and the second substrate are laminated in this order. At this time, the signal lines, the scanning lines, the first wiring, the second wiring, and the pixel electrodes are formed on the first substrate. It is preferable that the second substrate side is provided.

[0031] In this specification, a display panel has a function of displaying (outputting) an image on a display surface. Therefore, the display panel is one aspect of an output device.

[0032] In the present specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). int Circuit) or TCP (Tape Carrier Package) ) or COG (Chip On Glass) connectors are attached to the board. The IC (integrated circuit) mounted on the display panel is called a display panel module or a display It may be called a module or simply a display panel.

[0033] In addition, in this specification, a touch sensor is a sensor that is touched by a detection object such as a finger or a stylus. The touch sensor has the function of detecting the proximity of a touch panel or a touch panel. This is one aspect of the device.

[0034] In addition, in this specification and the like, a substrate having a touch sensor is referred to as a touch sensor panel or a single In this specification, the base of the touch sensor panel is A board with a connector, such as FPC or TCP, attached, or a substrate The touch sensor panel module is a device that has an IC (integrated circuit) mounted on it using the COG method. The sensor may be called a touch sensor module, a touch sensor module, or simply a touch sensor. There is a match.

[0035] In this specification, the touch panel has a function of displaying (outputting) images on a display surface. Touch sensors detect when a finger, stylus, or other object touches or approaches the display surface. Therefore, the touch panel is one type of input / output device. do.

[0036] The touch panel is, for example, a display panel (or display device) with a touch sensor, It can also be called a display panel (or display device) with a display function.

[0037] The touch panel may also have a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside. do.

[0038] In the present specification, the substrate of the touch panel is provided with a connector such as an FPC or TCP. A connector is attached, or an IC (integrated circuit) is mounted on the board using the COG method. The resulting product can be called a touch panel module, a display module, or simply a touch panel. It is sometimes called. Effect of the Invention

[0039] According to one embodiment of the present invention, a thin touch panel can be provided. Alternatively, it is possible to provide a touch panel that is easy to incorporate into electronic devices. Or, it is possible to provide a touch panel with a small number of parts. Or, it is possible to provide a lightweight touch panel. Panels can be provided.

[0040] Note that one embodiment of the present invention does not necessarily have all of these effects. Other effects can be extracted from the detailed description, drawings, claims, etc. [Brief description of the drawings]

[0041] [Figure 1] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 2] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 3] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 4] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 5] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 6] 4 shows an example of a wiring configuration according to the embodiment. [Figure 7] 4 shows an example of a wiring configuration according to the embodiment. [Figure 8] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 9] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 10] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 11] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 12] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 13]3 shows a configuration example of a touch panel module according to an embodiment. [Figure 14] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 15] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 16] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 17] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 18] 3 illustrates an example of a pixel configuration according to the embodiment. [Figure 19] 3 illustrates an example of a pixel configuration according to the embodiment. [Figure 20] 3 illustrates an example of a pixel configuration according to the embodiment. [Figure 21] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 22] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 23] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 24] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 25] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 26] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 27] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 28] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 29] 3 shows an example of a circuit configuration according to an embodiment. [Diagram 30] 3 shows an example of a circuit configuration according to an embodiment. [Diagram 31] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 32] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 33] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 34] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 35] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 36] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 37] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 38] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 39] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 40] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 41] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 42] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 43] 2A and 2B are a circuit diagram and a timing chart of a touch sensor according to an embodiment. [Diagram 44] 1 is a cross-sectional view illustrating one embodiment of a transistor. [Diagram 45] 1 is a cross-sectional view illustrating one embodiment of a transistor. [Diagram 46] 1 is a cross-sectional view illustrating one embodiment of a transistor. [Figure 47] FIG. 2 is a block diagram of a touch panel module according to an embodiment. [Figure 48] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 49] 1A to 1C are diagrams illustrating a display module according to an embodiment. [Figure 50] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 51] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 52] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Diagram 53] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 54] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 55] FIG. 4 is a diagram for explaining the measurement results of the XRD spectrum of a sample. [Figure 56] TEM image of a sample and a diagram explaining an electron beam diffraction pattern. [Figure 57] FIG. 1 is a diagram illustrating EDX mapping of a sample. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0042] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0043] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0044] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0045] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0046] (Embodiment 1) In this embodiment, a configuration example of a touch panel according to one embodiment of the present invention will be described. In particular, a capacitive touch sensor is applied to the touch panel of one embodiment of the present invention. An example of this case will be described.

[0047] The capacitive touch panel includes a surface capacitive touch panel and a projected capacitive touch panel. The capacitance method includes the self-capacitance method and the mutual capacitance method. This is preferable since it enables simultaneous multi-point detection.

[0048] A touch sensor that can be applied to a touch panel according to one aspect of the present invention includes a pair of conductive layers. Capacitive coupling occurs between the pair of conductive layers. When a detection object touches the pair of conductive layers, or The capacitance between a pair of conductive layers changes when they come into close proximity, allowing detection. It can be done.

[0049] The touch panel according to one embodiment of the present invention includes pixels arranged in a matrix and a plurality of signal lines. The signal lines and the scanning lines are connected to each other. The signal lines are provided so as to extend in a direction intersecting with each other. Here, the direction in which the signal lines extend is referred to as a first direction or The direction in which the scanning lines extend is called the second direction or Y direction. The first direction and the second direction may be directions that intersect with each other, but it is more preferable that they are perpendicular to each other. I wish.

[0050] Further, the touch panel according to an embodiment of the present invention includes a plurality of first wirings extending in a first direction; and a plurality of second wirings extending in a second direction. Each of the first wirings functions as a pair of electrodes that constitute a touch sensor. Capacitive coupling occurs between the first wiring and the second wiring.

[0051] In this specification, the term "layers, wiring, other structures, etc. extending in a certain direction" means that This means that the layers, wiring, and other structures are arranged to extend in the direction. In addition, when the layer, wiring, and other structures are viewed from above, It is sufficient that the layer, wiring, and other structures have a shape different from the direction of the target. The insulating layer 11 may have a portion extending in the direction perpendicular to the surface of the insulating layer 11.

[0052] In addition, the first wiring and the second wiring are each arranged to connect two adjacent pixel electrodes in a plan view. In this case, the first wiring and the second wiring A part of the second insulating film may overlap with the pixel electrode.

[0053] At this time, the pair of wires constituting the touch sensor avoids the optical path of the light from the display element. Since the lenses are arranged in such a way that, in principle, no moire fringes occur. refers to interference fringes that occur when two or more periodic patterns are superimposed. This makes it possible to realize a touch panel with extremely high display quality.

[0054] In addition, a light-shielding layer or a circular polarizing plate is provided on the display surface side of the pair of wires that constitute the touch sensor. In this way, reflection of external light by the pair of wirings is prevented. It is possible to suppress or prevent the pair of wires from being visible to the user. It can be prevented.

[0055] As an example of the first wiring and the second wiring, In this case, the first electrodes may be configured to extend in a stripe shape. Some of the wiring is electrically connected in an area outside the display unit that displays images. Similarly, some of the second wirings may be connected to the display unit. In this way, the electrodes can be electrically connected to each other in an area outside the electrodes. By configuring the first wiring and the second wiring in this manner, the area contributing to detection is increased, and detection The sensitivity can be increased.

[0056] Another example of the first wiring and the second wiring is a wiring that is arranged in a first direction and a second direction, respectively. The shape of the mesh may be made to have parallel portions. The opening of the first wiring and the second wiring may include one or more pixel electrodes. By forming the wiring of 2 in a mesh shape, the conductivity in the extension direction of the wiring is increased. This makes it possible to suppress signal delay and improve detection sensitivity.

[0057] Here, the first wiring and the second wiring are used to connect the pixels, display elements, driving circuits, etc. of the touch panel. It is preferable that the same film as the wiring, electrodes, semiconductors, etc. that constitute the film is processed and formed. This allows us to add a special process to add touch sensor functionality. Since the touch panel can be manufactured without any additional steps, the manufacturing cost can be reduced.

[0058] Typically, the first wiring and the second wiring are arranged in a stripe shape as described above. In this case, the first wiring is formed by processing the same conductive film as the signal line, and the second wiring is run through The first wiring and the second wiring can be formed by processing the same conductive film as the scan line. Since the wiring in 2 can be formed on a different insulating layer, no special ingenuity is required. In this case, the first wiring and the second wiring can be crossed. and the scanning line are formed on a different insulating layer, and the second wiring and the signal line are formed on a different insulating layer. Therefore, the first wiring and the scanning line, and the second wiring and the signal line can be connected without any special measures. These can easily be crossed.

[0059] Furthermore, for example, when the first wiring and the second wiring are formed in the above-mentioned mesh shape, The same conductive film as the signal lines is processed and formed in the portions parallel to the first direction, and the second The part parallel to the direction is formed by processing the same conductive film as the scanning line, and these two parts are conductive. By passing the first layer through the second layer, a mesh-like shape can be formed. Any two of the wiring, the second wiring, the signal line, and the scanning line can be selected without any special ingenuity. It can be easily crossed.

[0060] The configuration of the first wiring and the second wiring is not limited to this. Other examples will be described later. do.

[0061] The first wiring and the second wiring are used to form pixels, display elements, driving circuits, etc. of a touch panel. When the same film is processed to form wiring, electrodes, semiconductor layers, etc., the first wiring and the second wiring If the substrate on which the lines are formed (also called the first substrate or element substrate) is the touch surface, the first wiring This is preferable because it allows the distance between the line and the second wiring and the touch surface to be reduced, resulting in higher sensitivity. In this case, the first substrate side of the touch panel becomes the display surface. In the case of using the liquid crystal display device, a substrate (a second substrate) that is provided opposite to the first substrate and seals the liquid crystal is provided. A polarizing plate and a backlight are arranged on the outer side of the first substrate (also called the second substrate, or the opposing substrate). A polarizing plate may be disposed on the outer side of the substrate. A bottom emission type light emitting element can be used.

[0062] Hereinafter, a more specific configuration example of one embodiment of the present invention will be described with reference to the drawings.

[0063] [Configuration example] FIG. 1(A) is a schematic perspective view of a touch panel module 10 according to an embodiment of the present invention. The touch panel module 10 has a configuration in which a substrate 21 and a substrate 31 are bonded together.

[0064] FIG. 1B shows the structure of the substrate 21, with the substrate 31 indicated by a dashed line. A display section 32 having a number of pixel circuits, a circuit 34, wiring 35, etc. are provided. 1 shows an example in which an IC 43 and an FPC 42 are mounted on a board 31.

[0065] 1B shows an enlarged view of a part of the display unit 32. The display unit 32 has a A plurality of signal lines 51 extending in the Y direction, a plurality of scanning lines 52 extending in the X direction and a plurality of scanning lines 53 extending in the Y direction The display unit 32 has a plurality of pixel electrodes 36 arranged in a matrix. A plurality of wirings 23 extending in the Y direction and a plurality of wirings 24 extending in the Y direction are provided. The wiring 23 has a portion parallel to the signal line 51, and the wiring 24 has a portion parallel to the scanning line 52. .

[0066] The wiring 23 and the wiring 24 each function as a pair of electrodes that constitute a touch sensor. do.

[0067] In this way, the touch panel module 10 according to one embodiment of the present invention has electrodes of a touch sensor and A pair of wirings that function as a pixel electrode 36, a signal line 51, a scanning line 52, etc. are disposed on the same substrate. Therefore, the pixel electrodes 36, the signal lines 51, the scanning lines 52, and the like related to the display of an image are provided. Since the pair of wires for the touch sensor can be formed through the same process as the wire 52, the manufacturing cost can be reduced. It can be reduced.

[0068] Capacitive coupling occurs between the wires 23 and 24. For example, when a driving method of a projected mutual capacitance type is used, In this case, one of the wirings 23 and 24 is used as a transmitting wiring (electrode) and the other is used as a receiving wiring (electrode). On the other hand, the driving method of the projected self-capacitance method When used, the wiring 23 and the wiring 24 are both transmission wiring and reception wiring, respectively. It is possible to configure the device to have both functions.

[0069] The wiring 23 and the wiring 24 are, for example, a signal line 51, a scanning line 52, a pixel electrode 36, or a display The same film as other wiring, electrodes, semiconductors, etc. provided in the portion 32 can be processed and formed. preferable.

[0070] In addition, the wiring 23 and the wiring 24 can be made of a material having a low resistance, for example. For example, metals such as silver, copper, and aluminum may be used. It is constructed using many very thin conductors (e.g., a few nanometers in diameter). Metal nanowires such as Ag nanowires, Cu nanowires, etc. may be used. Al nanowires or the like may also be used. In the case of Ag nanowires, the light transmittance is, for example, 89% or more. Furthermore, the sheet resistance value can be between 40 Ω / □ and 100 Ω / □. Since such metal nanowires have high transmittance, they are suitable for use as electrodes in display devices, such as pixel electrodes. The metal nanowire may be used for the transistor or the common electrode.

[0071] Alternatively, at least one of the wiring 23 and the wiring 24 may be made of a conductive oxide. For example, conductive materials including indium oxide, tin oxide, or zinc oxide may be used. In addition, when a material that transmits visible light is used for the wiring 23 or the wiring 24, the wiring and the display The display element is arranged so as to overlap with the wiring, and light from the display element is emitted through the wiring. That is, when a material that transmits visible light is used, the wiring may be connected to the pixel electrode 36. may be arranged in a stacked manner.

[0072] The display section 32 can be a display element using the pixel electrode 36 as an electrode. Here, the display element is preferably a light-emitting element such as a transmissive liquid crystal display element or an organic EL element. can be used.

[0073] The display element is not limited to this, and various elements can be used. For example, a reflective type Or it can be displayed by semi-transmissive liquid crystal element, electrophoretic method, electronic liquid powder method, etc. display element (also called electronic ink), shutter-type MEMS display element, optical interference type The pixels included in the display unit 32 are added to the display element. The pixel circuit may further include a pixel circuit. The pixel circuit may include, for example, a transistor, a capacitance element, and It may also have wiring for electrically connecting them.

[0074] [Cross-section example 1] FIG. 2A is a schematic cross-sectional view of a part of the display unit 32. In FIG. 2A, one pixel and , a wiring 23 and a wiring 24 are shown. 1 shows an example in which a liquid crystal element is used.

[0075] Although not shown here, the touch panel module 10 includes a substrate 21 and a substrate 31. The periphery of the substrate is bonded with an adhesive layer or the like. 7 is sealed.

[0076] In the display section 32, a transistor 70, a pixel electrode 36, a wiring 23, and The wiring 24 and the like are provided. In addition, the surface of the substrate 31 facing the substrate 21 is provided with a colored layer 65. , a light-shielding layer 66, a common electrode 38, and the like are provided.

[0077] The transistor 70 includes a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer the insulating layer 73 serving as a source or a drain; the conductive layer 74a serving as a source or a drain; The second conductive layer 74b functions as the other of the source and drain.

[0078] Here, as an example, the conductive layer 74a is a part of the signal line 51, and the conductive layer 71 is a part of the scanning line 5 It is part of 2.

[0079] An insulating layer 81 is provided to cover the transistor 70, and the pixel electrode 36 is provided on the insulating layer 81. The pixel electrode 36 is electrically connected to the conductive layer 74b through the opening of the insulating layer 81. The pixel electrodes 36, the common electrode 38, and the liquid crystal 37 sandwiched between them form a liquid crystal layer. In FIG. 2A, the liquid crystal element 60 is a VA (Vertical Alignment) type. It is a transmissive liquid crystal element to which the LC alignment mode is applied.

[0080] Here, the liquid crystal element 60 is a pair of electrodes in the thickness direction of the touch panel module 10. The electrodes are arranged in a direction parallel to the liquid crystal 37, and an electric field is applied to the liquid crystal 37 in the thickness direction. The method is not limited to this, and a method of applying an electric field in a direction perpendicular to the thickness direction may also be used. stomach.

[0081] The touch panel module 10 is provided with a normally black type liquid crystal display device, for example, a vertical alignment A transmissive liquid crystal display device using a vertical alignment (VA) mode can be used. The method is MVA (Multi-Domain Vertical Alignment) t) mode, PVA (Patterned Vertical Alignment) mode mode, ASV (Advanced Super View) mode, etc. Cut.

[0082] Moreover, the liquid crystal element 60 can be a liquid crystal element to which various modes are applied. For example, in addition to the VA mode, there are also TN (Twisted Nematic) and IPS ( In-Plane-Switching mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetric alig ned Micro-cell mode, OCB (Optically Compensated ated Birefringence mode, FLC (Ferroelectric Liquid Crystal mode, AFLC (AntiFerroelectr It is possible to use liquid crystal elements that use the liquid crystal (LC) mode. Cut.

[0083] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. The optical modulation of liquid crystals is achieved by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field). The liquid crystal used in the liquid crystal element is These include thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, and polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal, Ferroelectric Liquid Crystal These liquid crystal materials can be used as cholesteric or antiferroelectric liquid crystals depending on the conditions. These phases include nematic, smectic, cubic, chiral nematic, and isotropic phases.

[0084] As the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used. It is only necessary to use an optimum liquid crystal material depending on the mode and design to be applied.

[0085] In FIG. 2A, the wiring 24 and the conductive layer 71 are formed by processing the same conductive film, and are on the same surface. In addition, the wiring 23, the conductive layer 74a, and the conductive layer 74b are arranged on the same The figure shows an example in which the wiring is formed by processing a conductive film and arranged on the same surface. 23 is formed on the insulating layer 73, and the wiring 24 is formed on the insulating substrate 21. Since an insulating layer 73 is provided between the wiring 23 and the wiring 24, this can be achieved without any special measures. These can be crossed.

[0086] As shown in FIG. 2A, capacitive coupling occurs between the wiring 23 and the wiring 24. For example, When using a capacitive driving method, one of the wirings 23 and 24 is connected to the power supply of the transmitting side. One electrode can be used as a pole and the other as a receiving electrode.

[0087] A polarizing plate 61 and a polarizing plate 62 are provided to sandwich the substrate 21 and the substrate 31. A backlight 63 is provided outside the polarizing plate 62. Since light from the backlight travels in the direction of the arrow shown in FIG.

[0088] The backlight 63 may be a direct-light type backlight or an edge-light type. The backlight may be LED (Light Emitting Diode). By using a direct-type backlight equipped with a contrast In addition, the edge-light type backlight is used. This is preferable because it is possible to reduce the thickness of the touch panel module including the backlight.

[0089] Here, a linear polarizing plate may be used as the polarizing plate 61 located on the display surface side, but a circular polarizing plate As the circular polarizer, for example, a linear polarizer and a quarter-wave retardation plate stacked together can be used. In particular, as shown in FIG. 2, a touch sensor may be provided on the substrate 21 side. When the wiring 23 and wiring 24 that constitute the wiring are arranged, the wiring reflects external light, and the reflected light In this case, the reflection can be prevented by using a circular polarizing plate as the polarizing plate 61. It can be suppressed.

[0090] When a circular polarizing plate is used as the polarizing plate 61, a circular polarizing plate may also be used as the polarizing plate 62. Alternatively, a normal linear polarizing plate can be used. By adjusting the cell gap, orientation, driving voltage, etc. of the liquid crystal element 60 according to the type of plate, It is sufficient to realize a desired contrast.

[0091] The color layer 65 can also be called a color filter, and changes the light of the backlight 63 to a specific color. For example, a color layer can be used to convert red, green, and blue light into light for each pixel (subpixel). By applying a corresponding colored layer 65, a full color display can be achieved. By adding pixels (sub-pixels) corresponding to colors such as yellow and white in addition to these three colors, the power consumption This is preferable because it can reduce

[0092] When a transmissive liquid crystal element is used as the liquid crystal element 60, the pixel electrode 36 and the common electrode A light-transmitting conductive film can be used for 38. In this case, the pixel electrode 36 or the common electrode 38 can be made of a material having light reflectivity.

[0093] In the liquid crystal element 60 in FIG. 2A, the pixel electrode 36 and the common electrode 38 transmit visible light. With this configuration, the liquid crystal element 60 is a transmissive liquid crystal element. For example, when the backlight 63 is disposed on the substrate 31 side, the polarizing plate 62 The polarized light from the backlight 63 passes through the substrate 31, the common electrode 38, the liquid crystal 37, the pixel electrode 36, the substrate 21, etc., and reaches the polarizing plate 61. At this time, the pixel electrode 36 and the common electrode 38 The orientation of the liquid crystal 37 can be controlled by applying a voltage between the liquid crystal 37 and the optical modulation of light. That is, the intensity of the light emitted through the polarizing plate 61 can be controlled. The colored layer 65 absorbs light outside a specific wavelength range, The emitted light has a peak in a specific wavelength region. The emitted light is red, green, or blue.

[0094] As shown in FIG. 2A, the transistor 70 is disposed so as to overlap the light-shielding layer 66. In this way, the light from the backlight 63 is incident on the semiconductor layer of the transistor 70. Since the radiation of the wiring 23 can be suppressed, the reliability can be improved. , and the wiring 24 is preferably disposed so as to overlap the light-shielding layer 66. The wiring 23 and the wiring 24 can suppress diffuse reflection of light from the backlight 63. , the contrast of the displayed image or video can be improved.

[0095] FIG. 2B shows that both the wiring 23 and the wiring 24 are formed in the same layer as the conductive layer 74a and the conductive layer 74b. This is an example of forming the conductive film by processing the conductive film. A bridge structure is formed using a conductive layer made of the same conductive film as the layer 71 and the pixel electrode 36. For example, the conductive layer may be overlapped with one of the wiring 23 and the wiring 24. The wiring 23 and the wiring 24 may be electrically connected to each other.

[0096] In FIG. 2C, both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 71. At this time, at the intersection of the wiring 23 and the wiring 24, the conductive layer 74a and The conductive layer is made of the same conductive film as the pixel electrode 36, and the like, and is formed into a bridge structure in the same manner as described above. It is sufficient to form the following.

[0097] In addition, in FIGS. 2A, 2B, and 2C, a transistor having a bottom gate structure is used as the transistor 70. Although a transistor is used, a transistor having a top gate structure may also be used.

[0098] FIG. 3A shows an example in which a transistor having a top gate structure is used as the transistor 70. is doing.

[0099] The transistor 70 shown in FIG. 3A includes a semiconductor layer 72 and an insulating layer 73 that covers the semiconductor layer 72. The semiconductor layer 72 includes a conductive layer 71 that overlaps a portion of the semiconductor layer 72. The region where the panel is to be formed (the region overlapping with the conductive layer 71) is sandwiched between a pair of low resistance regions 75. One of the low resistance regions 75 functions as a source and the other functions as a drain. The low resistance region 74a and the conductive layer 74b are connected to each other through an opening provided in the insulating layer 81. 5.

[0100] In FIG. 3A, an insulating layer 82 is provided to cover the conductive layer 74a and the conductive layer 74b. The pixel electrode 36 is provided on the insulating layer 82. The conductive layer 74b is electrically connected to the conductive layer 74b through the opening.

[0101] FIG. 3A shows a wiring 23 formed by processing the same conductive film as the conductive layers 74a and 74b. In this example, the wiring 23 is formed by processing the same conductive film as the conductive layer 71. The wiring 24 is located on the insulating layer 73 .

[0102] In FIG. 3B, both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 71. FIG. 3C shows an example in which both the wiring 23 and the wiring 24 are covered with a conductive layer 74. 7 shows an example in which the conductive layer 74a and the conductive layer 74b are formed by processing the same conductive film.

[0103] In each of the drawings of FIG. 2 and FIG. 3, the substrate 21 side is shown as the display surface side. In this case, the backlight 63 is arranged to be lighted from the polarizing plate 61. In this case, a circular polarizing plate is used for the polarizing plate 61 located on the display surface side. Alternatively, in addition to the polarizing plate 61, a circular polarizing plate may be provided.

[0104] Here, the backlight 63 is disposed outside the substrate 31, and the substrate 21 side is the touch panel. In particular, the wiring 23 and the wiring 24 are used as a display surface and a touch surface. The substrate 21 side on which the object is supported is used as the touch surface of the touch panel, so that the object to be detected and the wiring 23 Since the physical distance between the touch sensor and the wiring 24 can be reduced, the detection sensitivity of the touch sensor can be improved. However, one aspect of the present invention is not limited to this. Alternatively, the substrate 31 side can be used as the display surface and touch surface of the touch panel by disposing the substrate 31 on the outside. .

[0105] The above is the description of the first cross-sectional configuration example.

[0106] [Cross-section example 2] In the following, a bottom-emission organic EL element is used as the display element provided in the pixel. An example of the application will be shown below. Note that explanations of parts that overlap with the above may be omitted.

[0107] FIG. 4A is a schematic cross-sectional view of a part of the display unit 32. In FIG. 4A, one pixel and 2, an example of the wiring 23 and the wiring 24 is shown. In the display unit 32, the substrate 21 side is the display surface side. It becomes.

[0108] The touch panel module 10 is formed by bonding a substrate 21 and a substrate 31 together with an adhesive layer 68. There are.

[0109] An insulating layer 81 is provided to cover the transistor 70, and the pixel electrode 36 is provided on the insulating layer 81. The pixel electrode 36 is electrically connected to the conductive layer 74b through the opening of the insulating layer 81. An insulating layer 83 is provided on the insulating layer 81. The insulating layer 83 is connected to the pixel electrode 3. A part of the insulating layer 83 is provided to cover the end of the pixel electrode 36. On the insulating layer 83 and the pixel electrode 36, the EL layer 47 and the common electrode 48 are laminated in this order. The pixel electrode 36, the common electrode 48, and the EL layer 47 sandwiched therebetween form a light-emitting element 40. is configured.

[0110] The light emitting element 40 shown in FIG. 4A emits light toward the substrate 21 on which the light emitting element 40 is supported. The light emitting element 40 is a bottom emission type light emitting element. Among them, the pixel electrode 36 provided on the substrate 21 side has a function of transmitting visible light, and The common electrode 48 provided on the side has the function of reflecting visible light.

[0111] In the configuration shown in FIG. 4A, the colored layer 65 is provided closer to the substrate 21 than the light emitting element 40. It is being done.

[0112] The coloring layer 65 converts the light from the light emitting element 40 into light having a specific color. When a light emitting element that emits white light is applied to the element 40, a color layer is formed for each pixel (subpixel). By applying color layers 65 corresponding to red, green, and blue, a full color display is achieved. In addition to these three colors, pixels (sub-pixels) corresponding to colors such as yellow and white can be added. Providing such a filter is preferable since it reduces power consumption.

[0113] The configuration of the light emitting element 40 is not limited to this, and may be a top emission (upper surface emission) type light emitting element. A light emitting element or a dual emission (two-sided emission) type light emitting element can also be applied. In addition, by creating the EL layer 47 of the light-emitting element 40 for each pixel (sub-pixel), The light emitting element 40 that emits light of different colors may be made for each pixel (sub-pixel). In other words, the colored layer 65 may not be provided.

[0114] FIG. 4A shows an example in which a polarizing plate 61 is provided on the outer side of the substrate 21, that is, on the display surface side. As the polarizing plate 61, a circular polarizing plate can be suitably used. By using a circular polarizer, reflection from the wiring 23, wiring 24, etc. can be suppressed.

[0115] FIG. 4B shows that both the wiring 23 and the wiring 24 are formed in the same layer as the conductive layer 74a and the conductive layer 74b. In this example, a conductive film is processed. In FIG. 4C, both the wiring 23 and the wiring 24 are is an example formed by processing the same conductive film as the conductive layer 71.

[0116] FIG. 5A shows an example in which a transistor having a top gate structure is used as the transistor 70. FIG. 5B shows a case where both the wiring 23 and the wiring 24 are formed as conductive layers 74a and 74b. FIG. 5C shows an example in which the wiring 23 and the 1 shows an example in which both of the wirings 24 are formed by processing the same conductive film as the conductive layer 71.

[0117] Here, a bottom emission type light emitting element is used as the light emitting element 40, and the substrate 21 side This shows an example in which the wiring 23 is used as the display surface and touch surface of a touch panel. The substrate 21 side on which the wiring 24 is supported is used as the touch surface of the touch panel. Since the physical distance between the wiring 23 or the wiring 24 can be reduced, the detection feeling of the touch sensor can be improved. However, one embodiment of the present invention is not limited thereto. A top emission type light emitting element or a dual emission type light emitting element is applied. The substrate 31 side can also be used as the display surface and touch surface of a touch panel.

[0118] [About the wiring shape] [Wiring shape example 1] 6A shows an example of the top surface shape of the wiring 23 and the wiring 24. The wiring 23 is in the X direction. One of the wirings 23 extends in the Y direction, and the wiring 24 extends in the Y direction. In the region, a plurality of stripe-shaped portions extending in the X direction are provided, and the stripe-shaped portions are connected in an area outside the display unit 32.

[0119] With this configuration, the wiring 23 is aligned in the X direction in the portion overlapping the display unit 32. In addition, the wiring 24 can be configured with only the portions that are approximately parallel to the Y direction. The wiring 23 is arranged so as not to intersect with a signal line 51 (not shown) extending in the X direction. Therefore, it is possible to simultaneously form these by processing the same conductive film. Similarly, the wiring 24 is arranged so as not to intersect with the scanning line 52 (not shown) extending in the Y direction. It is possible to form these using the same conductive film.

[0120] Here, as shown in FIG. 6B, a conductive layer extending in the X direction is provided between adjacent wirings 23. Similarly, a conductive layer 26b extending in the Y direction may be provided between the wirings 24. The conductive layer 26a and the conductive layer 26b may be, for example, electrically floating. Alternatively, a predetermined constant potential may be applied. The wiring 24 and the conductive layer 26b are formed by processing the same conductive film. In this way, the wiring 23 and the wiring 24 are preferably arranged in the display unit 32. Maintain the periodicity of the layout from the area where they are placed to the area where they are not placed. Therefore, between the pixels close to the wiring 23 and the wiring 24 and the pixels far from these, This suppresses the occurrence of uneven brightness caused by differences in the thickness of the stacked structure that makes up the pixels. This can be done.

[0121] In FIG. 6 and other figures, the short side direction of the display unit 32 is shown as the X direction and the long side direction is shown as the Y direction. However, the present invention is not limited to this, and the short side direction may be the Y direction and the long side direction may be the X direction.

[0122] [Wiring shape example 2] FIG. 7A shows an example of a wiring 23 and a wiring 24 having a different shape from that shown in FIG. There are.

[0123] The wiring 23 and the wiring 24 each have a portion parallel to the X direction and a portion parallel to the Y direction. The two parts form a mesh-like upper surface. The mesh is arranged so that the openings of the mesh include one or more pixel electrodes 36 (not shown). The lines 23 and wiring 24 are arranged so as not to block the light from the display element. It is possible.

[0124] 7B, a conductive layer 2 is formed so as to fill the gap between the wiring 23 and the wiring 24. In this case, the conductive layer 26 may be arranged in a planar shape in the X direction, similar to the wiring 23 and the wiring 24. It is preferable that the conductive layer 26 has a configuration having a row portion and a portion parallel to the Y direction. It is preferable that a part of the insulating layer 10 has a mesh-like shape.

[0125] The wiring 23 and the wiring 24 are formed by processing different conductive films on different insulating layers. This allows the wiring 23 and the wiring 24 to cross each other without any special effort. Alternatively, for example, the wiring 24 may be formed as an island-like portion by processing the same conductive film as the wiring 23. The wiring 23 is connected to an island-shaped portion formed by processing a conductive film on an insulating layer different from the wiring 23. Alternatively, the wiring 23 may be arranged to cross the wiring 24. Alternatively, the wiring 23 and the wiring 24 may be connected to each other. At least one of the above is on a different insulating layer in the portion parallel to the X direction and the portion parallel to the Y direction. By processing and forming conductive films with different thicknesses, and connecting the two types of parts, wiring 23 and the wiring 24 may cross each other without being electrically short-circuited.

[0126] The above is a description of examples of wiring shapes.

[0127] [Wiring configuration example 1] In the following, a more specific example of the wiring configuration when a liquid crystal element is applied to the display unit 32 will be described. In the drawings shown below, in order to facilitate the explanation, the same conductive film is processed to produce the same pattern. In the following description, layers, wiring, etc. that are used in the same manner are indicated by the same hatching pattern.

[0128] [Configuration Example 1-1] FIG. 8 shows a signal line 51, a scanning line 52, a wiring 23, a wiring 24, a pixel electrode, and a FIG. 8 shows an example of a layout of the poles 36. This corresponds to an enlarged view of region A in FIG.

[0129] The signal line 51 and the wiring 23 are arranged in parallel to the X direction. The signal lines 51 and the wiring 23 are formed by processing the same conductive film. The scanning lines 52 and the wiring 24 are formed by processing the same conductive film. Therefore, the wiring 23 and the wiring 24 can be formed without increasing the number of steps.

[0130] In addition, by adopting such a configuration, the wiring 23 and the wiring 24, the signal line 51 and the wiring 24, The scanning line 52 and the wiring 23 can be crossed without requiring any special device. Cut.

[0131] FIG. 8 shows a pixel circuit 80 having a transistor 70 and a pixel electrode 36. The pixel circuits 80 are arranged in a matrix in the X and Y directions. 3 corresponds to one sub-pixel included in unit 32.

[0132] In the pixel circuit 80, a part of the scanning line 52 functions as a gate electrode. As shown in FIG. 8, a part of the scan line 5 serves as a source electrode or a drain electrode. A semiconductor layer 72 is disposed so as to overlap a protruding portion of the semiconductor layer 72. The protruding portion of the signal line 51 is disposed on the opposite side of the semiconductor layer 72 from the signal line 51. A conductive layer 74b is provided. The conductive layer 74b is electrically connected to the pixel electrode 36. .

[0133] The wiring 23 is disposed between two pixel circuits 80 adjacent to each other in the Y direction. between two pixel electrodes 36 adjacent in the direction, between two signal lines 51, and between two semiconductor layers 72 , or it can be said that it is disposed between two conductive layers 74b, etc.

[0134] On the other hand, the wiring 24 is disposed between two pixel circuits 80 adjacent to each other in the X direction. Between two pixel electrodes 36 adjacent in the X direction, between two scanning lines 52, and between two semiconductor layers 72 or between two conductive layers 74b, etc.

[0135] Here, FIG. 8 shows an example in which the width of the wiring 24 is larger than the width of the wiring 23. For example, the wiring 24 may be made of a material having a lower conductivity than the wiring 23, or the wiring 24 may be made of a material having a lower conductivity than the wiring 23. When arranging the wiring along the long side, etc., in order to reduce electrical resistance, It is preferable to make the width of the wiring 24 larger than that of the wiring 23. Alternatively, the electrical resistance of the wiring 24 can be reduced. For this reason, the thickness of the wiring 24 may be made thicker than that of the wiring 23. The width of the wiring 4 is not limited to this, and the width of the wiring 23 may be made larger than that of the wiring 24. The width of the wiring 23 and the wiring 24 may be set to be approximately the same. For example, when the wiring 23 and the wiring 24 are The constants should be approximately the same, or only one of wires 23 and 24 should be used as the detection wire. The width, thickness, material, etc. of the wiring 23 and the wiring 24 are adjusted so that one time constant is smaller than the other. It can be set appropriately.

[0136] [Configuration Example 1-2] FIG. 9(A) shows an example in which the configuration of the wiring 24 is different from that in FIG. The wiring 24 shown in A) is made up of a portion formed by processing the same conductive film as the signal line 51, and a portion formed by processing the scanning line 52 and a portion formed by processing the same conductive film are arranged alternately. The two portions have an overlapping region, and in this region, an insulating layer is formed between them. The electrical connection is made through an opening in the edge layer.

[0137] The portions of the wiring 24 obtained by processing the same conductive film as the scanning line 52 are signal It intersects with at least one of the line 51 and the wiring 23 .

[0138] [Configuration Example 1-3] FIG. 9B shows an example in which the configuration of the wiring 23 is different from that in FIG. The wiring 23 shown in FIG. 2B is made up of a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the scanning line 52 and a portion formed by processing the same conductive film are arranged alternately. The two portions have an overlapping region, and in this region, an insulating layer is formed between them. The electrical connection is made through an opening in the edge layer.

[0139] The portions of the wiring 23 obtained by processing the same conductive film as the signal line 51 are each It intersects with at least one of the line 52 and the wiring 24 .

[0140] Here, the configuration examples 1-1 to 1-3 are, for example, as illustrated in the above-mentioned wiring shape example 1 (FIG. 6, etc.). As shown in FIG. 1, the wiring 23 and the wiring 24 have a stripe shape in the portion where they overlap with the display section 32. This can be suitably applied when

[0141] [Configuration Example 2-1] In FIG. 10A, the wiring 23 has both a portion parallel to the X direction and a portion parallel to the Y direction. In FIG. 10B, the wiring 24 is arranged in a portion parallel to the X direction and in a portion parallel to the Y direction. FIG. 10(A) shows an example in which the conductor has both a portion parallel to the conductor in the direction of the arrow and a portion parallel to the conductor in the direction of the arrow. 10(B) is an enlarged view of region B in FIG. 7(A), and FIG. 10(B) is an enlarged view of region C in FIG. In this example, the wiring 23 is taken as an example, but the wiring 24 and the above-mentioned The conductive layer 26, the conductive layer 26a, the conductive layer 26b, etc. may also have a similar shape.

[0142] The portion of the wiring 23 parallel to the X direction is formed by processing the same conductive film as the signal line 51. On the other hand, the portion parallel to the Y direction is formed by processing the same conductive film as the scanning line 52. The wiring 23 has a portion parallel to the X direction and a portion parallel to the Y direction. At the intersection, the insulating film between them is electrically connected through an opening. With this configuration, the wiring 23 can be formed in a mesh shape. can be done.

[0143] Here, the wiring 23 has two parts that are parallel to the X direction and adjacent to each other, and a part that is parallel to the Y direction and It can be said that the opening is surrounded by two adjacent portions. In the above embodiment, the opening portion includes three pixel electrodes 36. However, the present invention is not limited to this. One or more pixel electrodes 36 may be used. By forming the wiring 23 in a dense mesh shape, In addition, by forming the wiring 23 in a sparse mesh shape, the resistance of the wiring 23 can be reduced. The parasitic capacitance can be reduced.

[0144] In addition, in FIG. 10, the distance between two adjacent portions of the wiring 23 that are parallel to the X direction and the distance between the adjacent portions of the wiring 23 that are parallel to the X direction are The two parts are arranged so that they are parallel to each other and the distance between the two adjacent parts is approximately the same. For example, two adjacent parts parallel to the Y direction may be spaced apart by two pixels ( For example, if there are three types of sub-pixels, RGB, they are arranged with an interval of six sub-pixels. Even if two adjacent parts that are parallel to the X direction are arranged with a gap of one pixel In this case, the wiring 23 has a mesh shape with an opening having a rectangular shape that is long in the Y direction. It becomes.

[0145] [Configuration Example 2-2] FIG. 11A shows an example in which the configuration of the wiring 23 is different from that in FIG. In the configuration shown in FIG. 11(A), the portion of the wiring 23 parallel to the X direction is made of the same conductive film as the signal line 51. On the other hand, the portion of the wiring 23 parallel to the Y direction is the same as the signal line 51. The conductive film is processed to obtain a conductive layer, and the conductive film is processed to obtain a conductive layer. The conductive layers are arranged alternately in the Y direction. In the present invention, two different conductive layers have an area where they overlap each other, and in this area, The electrical connection is made through an opening in the insulating layer located at

[0146] In the portion of the wiring 23 parallel to the Y direction, the same conductive film as the scanning line 52 is processed and obtained. The portion intersects with the signal line 51 .

[0147] [Configuration Example 2-3] FIG. 11B shows an example in which the configuration of the wiring 23 is different from that in FIG. 10 and FIG. 11A. In the configuration shown in FIG. 11B, the portion of the wiring 23 parallel to the Y direction is the scanning line 5 The conductive film is the same as that of the wiring 23. On the other hand, the portion of the wiring 23 parallel to the X direction is A portion (conductive layer) obtained by processing the same conductive film as the scanning line 52 and a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 are The conductive layer is formed by processing the conductive film. In the portion parallel to the direction, the two different conductive layers have an area where they overlap each other, and in this area The insulating layer between the two electrodes is electrically connected to each other through an opening provided therein.

[0148] In the portion of the wiring 23 parallel to the X direction, a portion obtained by processing the same conductive film as the signal line The minute crosses the scan line 52 .

[0149] Here, the configuration examples 2-1 to 2-3 are, for example, as illustrated in the above-mentioned wiring shape example 2 (FIG. 7, etc.). As described above, this is preferably applied when the wiring 23 and the wiring 24 have a mesh-like shape. can.

[0150] [Configuration Example 3-1] In the above, the wiring 23 and the wiring 24 are formed by processing the same conductive film as the signal line 51 and the scanning line 52. However, one or both of the wiring 23 and the wiring 24 may be formed as a signal line 51 or The scanning lines 52 may be formed by processing a conductive film different from that of the scanning lines 52 .

[0151] In FIG. 12A, in contrast to the example shown in FIG. 8, the wiring 23 is a conductive line different from the signal line 51. An example of the case where the film is processed is shown.

[0152] Here, the wiring 23 may be located above the signal line 51 and the scanning line 52, It may be located between the scanning line 52 and the signal line 51, or between the signal line 51 and the scanning line 52. In this case, the wiring 23, the signal line 51, and the running Each of the scan lines 52 is preferably disposed on a different insulating layer.

[0153] The wiring 23 may be formed by processing the same conductive film as the pixel electrode 36. The wiring 23 can be formed in the same process as the pixel electrode 36 .

[0154] Here, the wiring 23 and the wiring 24 are connected to each other through an opening provided in an insulating layer overlapping between them. By electrically connecting the electrodes, a mesh-like shape can be formed.

[0155] In addition, when the wiring 23 and the signal line 51 are provided on different insulating layers, ) you can place them one on top of the other. This will increase the Y-axis distance. Since the space for arranging the wiring 23 is not required, the definition can be improved or the opening can be It is possible to increase the rate.

[0156] In FIG. 12B, the straight portion of the signal line 51 is included in the wiring 23 in a plan view. However, the present invention is not limited to this. For example, the width of the signal line 51 is smaller than the width of the wiring 2. The width of the wiring 23 is reduced, and the wiring 23 is arranged so as to be included in the signal line 51 in a plan view. Alternatively, a part of the signal line 51 may overlap the wiring 23, and another part of the signal line 51 may overlap the wiring 23. In this way, the parasitic capacitance between the signal line 51 and the wiring 23 can be reduced. It can be reduced.

[0157] In FIG. 13, in contrast to the example shown in FIG. 8, the wiring 24 is provided with a conductive film different from that of the scanning line 52. The figure shows an example of a case where the electrode is formed by processing.

[0158] The wiring 24 shown in FIG. 13 is located closer to the substrate 21 than the wiring 23 and the signal line 51. However, the wiring 24 is not limited to this example. It is sufficient that the wiring 24 is provided on an insulating layer different from that of the wiring 23. They may be formed by processing the same conductive film.

[0159] [Configuration Example 3-2] FIG. 14A shows the wiring 23, the wiring 24, the signal line 51, and the scanning line 52, all of which are This shows an example in which different conductive films are processed to form the wiring 23, wiring 24, The signal lines 51 and the scanning lines 52 may all be provided on different insulating layers.

[0160] In FIG. 14A, the wiring 24 is located at least closer to the wiring 23, the signal line 51, and the scanning line 52. In this example, the wiring 23 is located above the scanning line 52. is.

[0161] In FIG. 14B, the wiring 24 is located at least below the signal line 51. 3 is located below at least the wiring 24 and the scanning line 52.

[0162] The positions of the wiring 23, the wiring 24, the signal line 51, and the scanning line 52 in the height direction are is not limited to this, and various layered structures can be used.

[0163] Although not shown here, in the configuration shown in FIGS. 14(A) and 14(B), the wiring 23 and the signal line Alternatively, the wiring 24 and the scanning line 52 may be arranged so that at least a part of the wiring 24 and the scanning line 52 overlap each other. They may also be arranged so that they partially overlap each other.

[0164] [Configuration Example 3-3] In FIG. 15A, the mesh-shaped wiring 23 is formed by processing the same conductive film as the pixel electrode 36. 1 shows an example in which the

[0165] In FIG. 15B, the mesh-shaped wiring 23 is divided into a signal line 51, a scanning line 52, and In FIG. 15B, the wiring 23 is formed of a conductive film different from that of the pixel electrode 36. is located at least above the scanning line 52 and below the signal line 51. An example of this is shown.

[0166] The position of the wiring 23 in the height direction is not limited to this. The wiring 23 may be provided on an insulating layer different from that on which the signal line 52 and the pixel electrode 36 are provided. The signal line 51, the scanning line 52 and the pixel electrode 36 are disposed below or above the signal line 51, It may be located between the scan line 52 and two of the pixel electrodes 36 .

[0167] Although the wiring 23 has been described above, the wiring 24 (conductive layers 26a, 26b, and The conductive layer 26) may have a similar structure.

[0168] The above is a description of the wiring configuration example 1.

[0169] [Pixel configuration example] In the following, a more specific example of a pixel provided in the display unit 32 and using a liquid crystal element will be described. The following description will be given with reference to the drawings.

[0170] [Pixel configuration example 1] FIG. 16 shows an example of the configuration of a pixel circuit 80 that can be applied to a liquid crystal element to which the VA mode is applied. is doing.

[0171] The pixel circuit 80 shown in FIG. 16 includes a transistor 70, a capacitor element 85, a pixel electrode 36, etc. In addition to the signal line 51 and the scanning line 52, a capacitance line 53 is connected to one pixel circuit 80. This is being continued.

[0172] A part of the capacitance line 53 is used as one electrode of a capacitance element 85 arranged in the pixel circuit 80. The capacitance line 53 is supplied with a fixed potential such as a common potential, a ground potential, or a reference potential. Alternatively, a pulse potential or the like may be supplied depending on the driving method.

[0173] In FIG. 16, the capacitance element 85 is a part of the conductive layer 74b, a part of the capacitance line 53, and a gap between them. 1 shows an example in which the insulating layer 11 is formed by an insulating layer (not shown) located at the

[0174] In FIG. 16, the capacitance line 53 is arranged to extend in a direction parallel to the scanning line 52 (Y direction). However, the present invention is not limited to this example, and may be applied to a case where the signal line 51 extends in a direction parallel to the signal line 51 (X direction). The electrodes may be arranged in a grid pattern in both directions, or in a lattice pattern in both directions.

[0175] FIG. 16 shows an example in which the capacitance line 53 is formed by processing the same conductive film as the scanning line 52. However, the signal lines 51 and the pixel electrodes 36 may be formed by processing the same conductive film. It may be formed by processing a conductive film different from these.

[0176] In FIG. 16, the configuration illustrated in the above configuration example 1-1 is applied as an example of the wiring 23 and the wiring 24. In other words, the wiring 23 extending in the X direction is made of the same conductive film as the signal line 51. The wiring 24 extending in the Y direction is formed by processing the same conductive film as the scanning line 52. The wiring 23 and the wiring 24 are configured as shown in the example above. The above configurations can be substituted.

[0177] [Pixel configuration example 2] FIG. 17 shows an example of the configuration of a pixel circuit 80 that can be applied to a liquid crystal element to which the FFS mode is applied. It shows.

[0178] The pixel circuit 80 shown in FIG. 17 includes a transistor 70, a pixel electrode 36, and a common electrode 38. In addition, the pixel circuit 80 is connected to a signal line 51, a scanning line 52, and a common line 54. is.

[0179] The common wiring 54 is a wiring through which a potential to be supplied to the common electrode 38 is supplied. can be supplied with a fixed potential such as a common potential, a ground potential, or a reference potential. A pulse potential or the like may be supplied depending on the driving method.

[0180] In the pixel circuit 80, the common electrode 38 is disposed so as to overlap the pixel electrode 36. The element electrodes 36 have a comb-shaped upper surface. The common electrode 38 is formed by connecting at least two of the pixel electrodes 36. is disposed so as to overlap the area between the protruding portions of the

[0181] As shown in FIG. 17, the sides of the protruding portions of the pixel electrodes 36 are aligned in the X and Y directions. In FIG. 17, the pixel electrode 36 is preferably arranged in an oblique direction. The protruding portions are arranged symmetrically with respect to the Y direction. It is preferable to provide two types of protrusions symmetrical in the X direction or the Y direction. By using the poles 36, the viewing angle of the display unit 32 can be increased.

[0182] In the pixel circuit 80, the pixel electrode 36, the common electrode 38, and the insulating film 36 disposed therebetween A capacitance element can be formed by a layer (not shown). Since no space is required to form the elements, it is easy to increase the aperture ratio or definition. become.

[0183] The common electrode 38 extends in the Y direction. The pixel electrodes 51 and 52 are electrically connected to a common wiring 54 extending in the Y direction. The pixel circuit 80 and the common electrodes 38 arranged in the plurality of pixel circuits 80 adjacent to each other in the X direction are electrically connected to each other. can be electrically connected.

[0184] As shown in FIG. 17, in the area where the common electrode 38 and the signal line 51 overlap, By narrowing the width of the common electrode 38 in the X direction, the parasitic capacitance between the common electrode 38 and the signal line 51 can be reduced. This is preferable because it is possible to

[0185] In this embodiment, the pixel electrode 36 having a comb-shaped upper surface is disposed above the common electrode 38. In this example, the upper and lower positions can be reversed. The electrode 38 has a comb-shaped upper surface shape, and overlaps the area between the two protruding portions of the common electrode 38. The pixel electrodes 36 may be arranged as shown in FIG.

[0186] FIG. 17 shows an example in which the common wiring 54 is formed by processing the same conductive film as the signal line 51. However, the same conductive film as the scanning lines 52, the common electrodes 38, the pixel electrodes 36, etc. is processed and formed. Alternatively, a conductive film different from these may be processed to form the conductive film.

[0187] In FIG. 17, the configuration illustrated in the above configuration example 1-1 is applied as an example of the wiring 23 and the wiring 24. In other words, the wiring 23 extending in the X direction is made of the same conductive film as the signal line 51. The wiring 24 extending in the Y direction is formed by processing the same conductive film as the scanning line 52. The wiring 23 and the wiring 24 are configured as shown in the example above. The above configurations can be substituted.

[0188] [Modifications] Other examples of pixel circuit configurations that can be applied to the pixel circuit 80 will be described below.

[0189] FIG. 18(A) differs from the configuration illustrated in FIG. 17 mainly in that the shape of the pixel electrode 36 is different. The pixel electrode 36 has a top surface shape provided with one or more openings (slits).

[0190] At this time, as shown in FIG. 18(A), the shape of the slit of the pixel electrode 36 is rectangular. It is preferable that the rectangular shape be curved in a V-shape rather than a rectangular shape. This allows the viewing angle of the display unit 32 to be widened.

[0191] In FIG. 18A, similarly to FIG. 17, the common electrode 38 and the signal A part of the common electrode 38 has a constricted shape so as to reduce the area where the common electrode 38 intersects with the line 51. This configuration reduces the parasitic capacitance of the signal line 51. It is possible.

[0192] FIG. 18B shows an example in which the shape of the common electrode 38 in FIG. 18A is changed. The common electrode 38 is a contact between the transistor 70 and the conductive layer 74b and the pixel electrode 36. In FIG. 18B, the opening is provided for one pixel circuit. The common electrode 38 is provided extending in the X direction and the Y direction. The common electrode 38 is disposed in a region overlapping a part of the signal line 51 and a region overlapping a part of the scanning line 52. With this configuration, the electric resistance of the common electrode 38 in the X direction and the Y direction is It can be lowered.

[0193] FIG. 19 shows an example in which the common electrode 38 is disposed above the pixel electrode 36 . In this embodiment, the pixel electrode 36 disposed on the lower side also has a comb-like upper surface shape. The pole 36 and the common electrode 38 are arranged so as to interdigitate with each other in a plan view.

[0194] In FIG. 19, the sides of the protruding portions of the pixel electrodes 36 and the sides of the protruding portions of the common electrodes 38 are aligned in a plane. In this example, the arrangement is not limited to this, and the arrangement may be the same in plan view. The pixel electrode 36 and the common electrode 38 may be disposed so that the two protruding portions partially overlap each other. Alternatively, the pixel electrode 36 and the common electrode 38 are arranged so that the two protrusions are spaced apart in a plan view. It may be placed.

[0195] As shown in FIG. 19, the signal line 51 overlaps with the scanning line 52 and the common electrode 38. The width of the upper surface is narrowed at one part and the width of the other part is wide. By adopting such a shape, the parasitic capacitance between the signal line 51 and other wirings and electrodes can be reduced. In addition, the resistance of the signal line itself can be reduced. The upper surface has a narrowed shape so as to reduce the area.

[0196] In the example shown in FIG. 20, a configuration having two pixel circuits 80 in each of the X direction and the Y direction is used. In FIG. 20, one pixel circuit 80 is arranged symmetrically in the X direction and the Y direction. Thus, one unit including four pixel circuits 80 is formed.

[0197] In FIG. 20, the common electrode 38 has a portion extending in the X direction and a portion extending in the Y direction. In addition, in FIG. 19, the common electrodes 38 of the pixel circuits 80 adjacent to each other in the Y direction are and a portion connecting the common electrodes 38 of the pixel circuits 80 adjacent in the X direction. On the other hand, in the configuration shown in FIG. The portion connecting the common electrodes 38 of the adjacent pixel circuits 80 extends in the X direction. The pixel circuit 80 has a shape similar to that of the pixel circuit 80 in the Y direction and is disposed between two pixel circuits 80 adjacent to each other in the Y direction. The portion connecting the common electrodes 38 of the pixel circuits 80 adjacent in the Y direction is a portion extending in the Y direction. and is disposed between two pixel circuits 80 adjacent to each other in the X direction. Since the area occupied by the portion connecting the common electrodes 38 of adjacent pixel circuits 80 can be reduced, The aperture ratio or definition can be increased.

[0198] The above is a description of an example of the pixel configuration.

[0199] [Wiring configuration example 2] Below, a more specific example of the wiring configuration when an organic EL element is applied to the display unit 32 will be described. In the drawings shown below, the same conductive film is processed for ease of explanation. The layers, wiring, etc. obtained by the above process are shown with the same hatching pattern. Description of parts that overlap with configuration example 1 may be omitted.

[0200] [Configuration Example 4-1] FIG. 21 shows a signal line 51, a scanning line 52, a power supply line 55, a wiring 23, and a wiring An example of the arrangement (layout) of the lines 24, pixel electrodes 36, etc. is shown.

[0201] The signal line 51 and the wiring 23 are arranged in parallel to the X direction. The signal lines 51 and the wiring 23 are formed by processing the same conductive film. The scanning lines 52 and the wiring 24 are formed by processing the same conductive film. Therefore, the wiring 23 and the wiring 24 can be formed without increasing the number of steps.

[0202] The power supply line 55 supplies a potential or a signal to one electrode of the capacitance element 85 of the pixel circuit 80. In this example, the power supply line 55 is arranged in parallel with the signal line 51. The power supply line 55 may be arranged parallel to the scanning line 52. In that case, If the same conductive film is processed to form the power supply line 55 and the signal line 56, no special measures are required. The line 51 and the power line 55 can cross the wiring 23 .

[0203] The pixel circuit 80 shown in FIG. 5, and pixel electrodes 36. The pixel circuits 80 are arranged in a matrix in the X and Y directions. The pixel circuit 80 corresponds to one sub-pixel of the display unit 32.

[0204] In the pixel circuit 80, a part of the scanning line 52 functions as a gate electrode of the transistor 70a. A part of the signal line 51 is connected to the source electrode or the drain electrode of the transistor 70a. As shown in FIG. 21, a semiconductor layer 72 is disposed so as to overlap a part of the scanning line 52. The signal line 51 is disposed so as to overlap a part of the semiconductor layer 72. On the opposite side to the line 51 is a conductor which functions as the other of the source or drain of the transistor 70a. A conductive layer 74b is provided. The conductive layer 74b is electrically connected to the conductive layer 76. A part of the conductive layer 76 functions as the gate electrode of the transistor 70b. The conductive layer 7 and the power supply line 55 are disposed one on top of the other to form a capacitance element 85. Another part of the power supply line 55 functions as one electrode of the capacitance element 85. The other electrode of the capacitor 85 serves as the source or drain of the transistor 70b. The other of the source and drain of the transistor 70b is It is electrically connected to the pixel electrode 36 .

[0205] [Configuration Example 4-2] FIG. 22(A) shows an example in which the configuration of the wiring 24 is different from that in FIG. The wiring 24 shown in 22(A) is formed by processing the same conductive film as the signal line 51, in the same manner as in the configuration example 1-2. The portions formed by processing the same conductive film as the scanning lines 52 are alternately arranged. The two portions have an overlapping region, and in this region, The insulating layer between the two electrodes is electrically connected to each other through an opening provided therein.

[0206] The portions of the wiring 24 obtained by processing the same conductive film as the scanning line 52 are signal It intersects with at least one of the line 51 , the power line 55 , and the wiring 23 .

[0207] [Configuration Example 4-3] FIG. 22(B) shows an example in which the configuration of the wiring 23 is different from that in FIG. The wiring 23 shown in 22(B) is formed by processing the same conductive film as the signal line 51, in the same manner as in the configuration example 1-3. The portions formed by processing the same conductive film as the scanning lines 52 are alternately arranged. The two portions have an overlapping region, and in this region, The insulating layer between the two electrodes is electrically connected to each other through an opening provided therein.

[0208] [Configuration Example 5-1] In FIG. 23, similarly to the configuration example 2-1, the wiring 23 has a portion parallel to the X direction and a portion parallel to the Y direction. In this example, the wiring 23 is used as an example. However, the wiring 24, the conductive layer 26, the conductive layer 26a, the conductive layer 26b, etc. may also have the same shape. This can be done.

[0209] [Configuration Example 5-2] FIG. 24(A) shows an example in which the configuration of the wiring 23 is different from that in FIG. In the configuration shown in 24(A), like the configuration example 2-2, the portion of the wiring 23 parallel to the X direction is a signal. The wire 51 is formed by processing the same conductive film. The signal line 51 is formed by processing the same conductive film (conductive layer) as the scanning line 52. The conductive film is processed to obtain a conductive layer, and the conductive layer is arranged alternately. In the portion parallel to the Y direction, there is a region where two different conductive layers overlap each other, and this region and electrically connecting the two via an opening provided in an insulating layer located between the two. .

[0210] In the portion of the wiring 23 parallel to the Y direction, the same conductive film as the scanning line 52 is processed and obtained. The portion intersects with at least one of the signal line 51 and the power line 55 .

[0211] [Configuration Example 5-3] FIG. 24B shows an example in which the configuration of the wiring 23 is different from that in FIG. 23 and FIG. 24A. In the configuration shown in FIG. 24B, similarly to the configuration example 2-3, the Y direction of the wiring 23 The portion parallel to the scanning line 52 is formed by processing the same conductive film as the scanning line 52. The portion parallel to the direction is a portion (conductive layer) obtained by processing the same conductive film as the scanning line 52, The signal line 51 and a portion (conductive layer) obtained by processing the same conductive film are arranged alternately. In the portion parallel to the X direction, there is a region where two different conductive layers overlap each other. In this region, electrical connection is established through an opening in an insulating layer located between the two. are actively connected.

[0212] [Configuration Example 6-1] In the above, the wiring 23 and the wiring 24 are formed by processing the same conductive film as the signal line 51 and the scanning line 52. As in the configuration example 3-1, one of the wiring 23 and the wiring 24, or Alternatively, both may be formed by processing a conductive film different from that of the signal lines 51 and the scanning lines 52 .

[0213] 25(A) and 25(B) show the case where the wiring 23 is connected to the signal line 5 in the example shown in FIG. 1 shows an example in which a conductive film different from that in FIG.

[0214] 26 shows a case where the wiring 24 is a conductive line different from the scanning line 52 in the example shown in FIG. An example of the case where the film is processed is shown.

[0215] [Configuration Example 6-2] FIG. 27A shows the wiring 23, the wiring 24, the signal line 51, and the scanning line 52 in the same manner as in the configuration example 3-2. The example shows a case where the lines 52 are formed by processing different conductive films. The wiring 23, the wiring 24, the signal line 51, and the scanning line 52 are all formed on different insulating layers. It may be provided.

[0216] In FIG. 27A, the wiring 24 is located at least closer to the wiring 23, the signal line 51, and the scanning line 52. In this example, the wiring 23 is located above the scanning line 52. is.

[0217] In FIG. 27B, the wiring 24 is located at least below the signal line 51. 3 is located below at least the wiring 24 and the scanning line 52.

[0218] [Configuration Example 6-3] In FIG. 28A, similarly to the configuration example 3-3, the mesh-shaped wiring 23 is connected to the pixel electrode 36 1 shows an example in which the same conductive film as that in FIG.

[0219] In FIG. 28B, the mesh-shaped wiring 23 is divided into a signal line 51, a scanning line 52, and In FIG. 28B, the wiring 23 is formed of a conductive film different from that of the pixel electrode 36. is located at least above the scanning line 52 and below the signal line 51. An example of this is shown.

[0220] This concludes the description of the wiring configuration example 2.

[0221] [Circuit configuration example] FIG. 29 illustrates an example of a circuit diagram of a touch panel according to one embodiment of the present invention. The display when the two types of wiring that make up the touch sensor are arranged in stripes. For example, the example shown in Fig. 29 corresponds to the example shown in Fig. 6 and the like.

[0222] The pixels 90 arranged in a matrix form each include a transistor 70 and a circuit 91. 91 has at least one display element. As the display element, various display elements can be applied. Typically, the above-mentioned liquid crystal element 60 or the light-emitting element 40 can be used. preferable.

[0223] The wiring 23a and the wiring 23b are each formed of a plurality of portions extending in a direction parallel to the signal line 51 (the X direction). The wiring 24a and the wiring 24b extend in a direction parallel to the scanning line 52 (Y direction). The wiring 23a, the wiring 23b, the wiring 24a, and the wiring 24b are In the area outside the display area, multiple parts are electrically connected. The wiring 3a and the wiring 23b are collectively referred to as the wiring 23, and the wiring 24a and the wiring 24b are collectively referred to as the wiring 24. In some cases, the explanation is as follows.

[0224] As shown in FIG. 29, a capacitance element is formed by the wiring 23 and the wiring 24. That is, The capacitive elements are arranged in a matrix to form a touch sensor. The capacitance change of the capacitance element due to the approach of the object to be detected is used to detect the object. The capacitance can be, for example, a first capacitance in a portion where the wiring 23 and the wiring 24 overlap each other. and a second capacitance component formed by arranging the wiring 23 and the wiring 24 close to each other. Mainly the second capacitance component changes when the object to be detected approaches.

[0225] For ease of explanation, only four wires (wire 23a, wire 23b, wire 24) are shown. In addition, the wiring extending in the X direction (wiring 24a and wiring 24b) is shown. 23a, wiring 23b) has two portions parallel to the X direction and extends in the Y direction (wiring In the above example, the wiring 24a and the wiring 24b have two portions parallel to the Y direction. However, each may have three or more parts. The number of pixels 90 provided in the image forming apparatus is not limited to the example of FIG. 29, and may be any number as long as one or more pixels 90 are included. stomach.

[0226] In Figure 30, the two types of wiring that make up the touch sensor are each shaped like a mesh. For example, the example shown in FIG. 30 is different from the example shown in FIG. 30 shows a portion where mesh-shaped wiring 23 and wiring 24 intersect.

[0227] Similarly, in the example shown in FIG. 30, a capacitance element is formed by the wiring 23 and the wiring 24. The change in the capacitance of the capacitive element can be utilized for detection.

[0228] The above is a description of the circuit configuration example.

[0229] [Cross-section example 3] In the following, a touch panel module according to one embodiment of the present invention will be described in which a liquid crystal element is used as a display element. An example of a more detailed cross-sectional configuration of the module will now be described.

[0230] [Cross-sectional configuration example 3-1] FIG. 31 is a schematic cross-sectional view of the touch panel module 10. In FIG. 3A is a cross-sectional view of a region including an FPC 42, a region including a circuit 34, a region including a display unit 32, etc. An example of this is shown below.

[0231] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A liquid crystal 112 is sealed in the area surrounded by the substrate 31 and the adhesive layer 141. The substrate 31 has a polarizing plate 130a on its outer surface. The substrate 21 has a polarizing plate 1 30b.

[0232] Although not shown, on the outer side of the polarizing plate 130a or the outer side of the polarizing plate 130b, Backlighting may be provided.

[0233] The substrate 21 includes a touch sensor 22 including wiring 23 and wiring 24, a pixel electrode of a liquid crystal element 60, and a pole 111, transistor 201, transistor 202, capacitance element 203, connection portion 204, The transistor 201 is, for example, the transistor 70 described above. corresponds to:

[0234] The substrate 31 includes a colored layer 131, a light-shielding layer 132, an insulating layer 123, and a common layer for the liquid crystal element 60. Electrodes 113, spacers 124, etc. are provided.

[0235] On the substrate 21, insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are formed. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. The insulating layer 212 functions as a dielectric of the capacitor element 203. The insulating layer 213 and the insulating layer 214 are provided to cover the transistors, the capacitor element 203, and the like. The insulating layer 214 functions as a planarizing layer. In the case where the insulating layer covering the capacitor, etc. is an insulating layer 212, an insulating layer 213, and an insulating layer 214, However, the present invention is not limited to this and may have four or more layers, or may have a single layer or two layers. The insulating layer 214, which functions as a planarizing layer, may not be provided if it is not necessary. .

[0236] The transistor 201 and the transistor 202 are each a conductor having a portion that functions as a gate. A conductive layer 221, a conductive layer 222 part of which functions as a source electrode or a drain electrode, In this embodiment, the same hatching is applied to multiple layers obtained by processing the same conductive film. The pattern is attached.

[0237] Here, the pair of conductive layers 222 of the transistor 202 is electrically connected to the pixel electrode 111. The conductive layer 222 that is not connected functions as a part of the signal line. The conductive layer 221 which functions as the gate electrode of 202 functions as a part of the scan line.

[0238] In FIG. 31, the wiring 23 is formed by processing the same conductive film as the conductive layer 222, and the wiring 24 is An example in which the conductive layer 221 is formed by processing the same conductive film is shown.

[0239] In addition, in FIG. 31, a cross section of one sub-pixel is shown as an example of the display unit 32. The pixel includes a transistor 202, a capacitor element 203, a liquid crystal element 60, a color layer 131, and For example, the colored layer 131 is selectively formed to form a sub-pixel that exhibits red color and a sub-pixel that exhibits green color. By arranging sub-pixels, including sub-pixels that exhibit blue color, a full color display can be achieved. Here, a pixel is formed by a transistor 202, a capacitor 203, a pixel electrode 111, wiring, etc. A circuit (sub-pixel circuit) is formed.

[0240] FIG. 31 shows an example of the circuit 34 in which a transistor 201 is provided. .

[0241] In FIG. 31, as an example of the transistor 201 and the transistor 202, one gate voltage The semiconductor layer 231 in which the channel is formed is connected to two gate electrodes. By using such a configuration, the thickness of the transistor can be reduced. In this case, two gate electrodes are connected to each other and the same voltage is applied to them. A signal may be applied to drive the transistor. It is possible to increase the field effect mobility compared to conventional transistors, and increase the on-current. As a result, a circuit capable of high speed operation can be fabricated. It is possible to reduce the area occupied by the circuit section. This reduces the number of wirings when the display panel or touch panel is enlarged or has high resolution. Even if the signal delay in each wiring is increased, it is possible to reduce the display unevenness. It is possible to control it.

[0242] Note that the transistors in the circuit 34 and the transistors in the display unit 32 have the same structure. The transistors in the circuit 34 may all have the same structure. Alternatively, transistors having different structures may be used in combination. The multiple transistors may all have the same structure, or may have different structures. A combination of the above may also be used.

[0243] At least one of the insulating layers 212 and 213 that cover the transistors is resistant to water and hydrogen. It is preferable to use a material in which impurities are not easily diffused, such as the insulating layer 212. In this case, the insulating layer 213 can function as a barrier film. It is possible to effectively suppress the diffusion of impurities into the transistor from the outside. This makes it possible to realize a highly reliable touch panel.

[0244] The pixel electrode 111 is provided on the insulating layer 214. The source of the transistor 202 is connected through an opening formed in the insulating layer 213, the insulating layer 212, etc. The pixel electrode 111 is electrically connected to either the source or drain of the capacitance element 20. 3 is electrically connected to one of the electrodes.

[0245] On the substrate 31 side, an insulating layer 123 is provided to cover the colored layer 131 and the light-shielding layer 132. The insulating layer 123 may function as a planarization film. Since the surface of the common electrode 113 can be made substantially flat, the alignment state of the liquid crystal 112 can be made uniform. .

[0246] In FIG. 31, the liquid crystal element 60 is sandwiched between the pixel electrode 111 and a part of the common electrode 113. The display panel is made up of a liquid crystal 112 supported on the display panel.

[0247] In addition, the pixel electrode 111, the common electrode 113, the insulating layer 214, etc. are in contact with the liquid crystal 112. An alignment film for controlling the alignment of the liquid crystal 112 may be provided on the surface.

[0248] In the configuration shown in FIG. 31, the wiring 23 and the wiring 24 are arranged so as not to overlap the liquid crystal element 60. In addition, the wiring 23 and the wiring 24 are arranged so as to overlap the light-shielding layer 132. It is preferable that the above is done.

[0249] In the liquid crystal element 60, the pixel electrode 111 and the common electrode 113 have a function of transmitting visible light. With this configuration, the liquid crystal element 60 can be a transmissive liquid crystal element. For example, when the backlight is disposed on the substrate 31 side, the backlight is polarized by the polarizing plate 130a. The light from the light source passes through the substrate 31, the common electrode 113, the liquid crystal 112, and the pixel electrode 111. The light passes through the substrate 21 and reaches the polarizing plate 130b. At this time, the pixel electrode 111 and the common electrode 113 The orientation of the liquid crystal 112 can be controlled by applying a voltage between the liquid crystal 112 and the optical modulation of light. That is, the intensity of the light emitted through the polarizing plate 130b can be controlled. In addition, the colored layer 131 absorbs light outside a specific wavelength range. Thus, the extracted light exhibits, for example, red color.

[0250] Here, a linear polarizing plate may be used as the polarizing plate 130b, but a circular polarizing plate may also be used. As a circular polarizing plate, for example, a linear polarizing plate and a quarter-wave retardation plate are laminated. In particular, as shown in FIG. 31, the touch sensor 132 may be disposed closer to the substrate 21 than the light-shielding layer 132. When the wiring 23 and wiring 24 constituting the sensor are arranged, the wiring reflects external light, and the reflected light In this case, the light may be visible by using a circular polarizing plate as the polarizing plate 130b. , reflection can be suppressed.

[0251] When a circular polarizing plate is used as the polarizing plate 130b, a circular polarizing plate is also used as the polarizing plate 130a. Alternatively, a normal linear polarizing plate may be used. Depending on the type of polarizing plate applied to b, the cell gap and arrangement of the liquid crystal element used in the liquid crystal element 60 are A desired contrast can be achieved by adjusting the direction, driving voltage, etc.

[0252] The liquid crystal element 60 can be applied to the various modes exemplified in the first cross-sectional configuration example.

[0253] The common electrode 113 is a conductive layer provided on the substrate 21 side in a portion close to the end of the substrate 31. The layer is electrically connected to the connecting member 243. A potential or a signal can be supplied to the common electrode 113 from the FPC or IC.

[0254] The connector 243 may be, for example, a conductive particle. For this purpose, it is possible to use particles of organic resin or silica coated with a metal material. It is preferable to use nickel or gold as the metal material because it is possible to reduce the contact resistance. Particles coated with layers of two or more metal materials, such as nickel coated with gold, are It is preferable to use a material that is elastically deformable or plastically deformable as the connector 243. In this case, the conductive particles are preferably in a shape that is crushed in the vertical direction as shown in FIG. In this way, the connection body 243 and the conductive layer electrically connected thereto can be The contact area is increased, contact resistance is reduced, and problems such as poor connections are prevented. do.

[0255] It is preferable that the connector 243 is disposed so as to be covered with the adhesive layer 141. For example, After applying the paste or the like that will become the adhesive layer 141, the connector 243 may be dispersed. By disposing the connector 243 at the portion where the connector 243 is provided, for example, a display device having a solid sealing structure or This can be applied to any display device having an air-sealing structure, etc., in which the adhesive layer 141 is used in the periphery. can be done.

[0256] A connection portion 204 is provided in an area near the end of the substrate 21. The wiring is electrically connected to the FPC 42 via the interconnect layer 242. A conductive layer obtained by processing a part of 35 and the same conductive film as the pixel electrode 111 is laminated. 13 shows an example in which the connection unit 204 is configured as follows.

[0257] The above is the description of the cross-sectional configuration example 3-1.

[0258] [Cross-sectional configuration example 3-2] In the following, a touch panel to which a liquid crystal element of a different mode from that in the above-mentioned cross-sectional configuration example 3-1 is applied will be described. An example of the cross-sectional structure of the module 10 will be described. Note that the following will be explained only in the areas that overlap with the above. A detailed description of these will be omitted and only the differences will be explained.

[0259] FIG. 32 shows an example in which a liquid crystal element to which the FFS mode is applied is used as the liquid crystal element 60. The liquid crystal element 60 includes a pixel electrode 151, a liquid crystal 152, and a common electrode 153. .

[0260] The common electrode 153 is disposed on the insulating layer 214. An edge layer 215 is provided, and a pixel electrode 151 is provided on the insulating layer 215. 51 is a cross-sectional view of an insulating layer 215, an insulating layer 214, an insulating layer 213, and an insulating layer 212. The transistor 202 is electrically connected to one of the source and drain of the transistor 202 via a gate.

[0261] The pixel electrode 151 has a comb-like upper surface shape or an upper surface shape with slits. The common electrode 153 is disposed so as to overlap the pixel electrode 151. In the area where the pixel electrode 151 overlaps the common electrode 153, there is a portion where the pixel electrode 151 is not disposed on the common electrode 153. do.

[0262] In FIG. 32, a pixel electrode 151 having a comb-tooth or slit-like upper surface is provided on an insulating layer 21. 5, and the common electrode 153 is provided below the insulating layer 215. As shown in FIG. 33, the common electrode 153 is disposed above the insulating layer 215. In this case, the insulating layer 215 may be formed on the lower layer of the pixel electrode 151. The pixel electrode 151 is electrically connected to one of the source and drain of the transistor 202. The common electrode 153 provided above the insulating layer 215 may have a comb-like shape. Alternatively, the upper surface of the plate may have a slit-like shape.

[0263] In FIG. 32, the pixel electrode 151 and the common electrode 153 are laminated with an insulating layer 215 interposed therebetween. The capacitor element 203 is formed therein. Therefore, it is not necessary to form the capacitor element separately. Therefore, the aperture ratio of the pixel can be increased.

[0264] Here, by using a conductive material that transmits visible light as the common electrode 153, a transmission type In addition, both the pixel electrode 151 and the common electrode 153 can be made of a liquid crystal element. It is preferable to use a conductive material that transmits light, since the aperture ratio can be further increased.

[0265] In the case of a reflective liquid crystal element, either the pixel electrode 151 or the common electrode 153 A material that reflects visible light may be used for either or both of these. The aperture ratio can be increased by using a material that reflects visible light. Alternatively, a material that transmits visible light may be used for the pixel electrode 151 .

[0266] Alternatively, the pixel electrode 151 may be made of a material that reflects visible light, and the common electrode 153 may be made of a material that transmits visible light. A semi-transmissive liquid crystal element may be realized by using a transparent material. A reflection mode uses light reflected by the pixel electrode 151, and a reflection mode uses light reflected by the pixel electrode 151 through a slit provided in the pixel electrode 151. The LCD panel can be switched between a transmissive mode, in which light from a backlight is transmitted through the LCD panel, and a transparent mode, in which light from a backlight is transmitted through the LCD panel.

[0267] In addition, when the in-plane switching method is adopted, liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of a cholesteric liquid crystal is increased, the cholesteric The blue phase appears just before the transition from the black phase to the isotropic phase. In order to improve the temperature range, a liquid crystal composition containing a chiral agent of several weight percent or more is used. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent is used in the liquid crystal layer. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has a short wavelength and is optically isotropic. The composition does not require alignment treatment and has low viewing angle dependency. Also, no alignment film is required. This eliminates the need for rubbing, preventing electrostatic damage caused by rubbing. This can prevent the liquid crystal display device from being damaged or broken during the manufacturing process.

[0268] [Cross-sectional configuration example 3-3] In the following, a liquid crystal element having a mode different from that of the above-mentioned cross-sectional configuration examples 3-1 and 3-2 is applied. An example of a cross-sectional configuration of the touch panel module 10 will be described. In this section, the description of the same parts will be omitted and only the differences will be described.

[0269] FIG. 34 shows an example in which a liquid crystal element in IPS mode is used as the liquid crystal element 60. The liquid crystal element 60 includes a pixel electrode 151, a liquid crystal 152, and a common electrode 153. .

[0270] The pixel electrode 151 and the common electrode 153 are provided on the insulating layer 214. The element electrodes 151 and the common electrode 153 each have a comb-like upper surface shape. The pixel electrode 151 and the common electrode 153 are formed of the same conductive film. It is preferable that the pixel is formed by processing. The electrode 151 and the common electrode 153 are given different hatching patterns.

[0271] The above is the description of Cross-Sectional Configuration Example 3.

[0272] [Cross-section example 4] In the following, a touch panel according to one embodiment of the present invention will be described in which an organic EL element is used as a display element. A more detailed example of the cross-sectional structure of the module will be described. Note that the overlapping parts with those described above will be In some cases, explanations may be omitted.

[0273] [Cross-sectional configuration example 4-1] FIG. 35 is a schematic cross-sectional view of the touch panel module 10. In FIG. 3A is a cross-sectional view of a region including an FPC 42, a region including a circuit 34, a region including a display unit 32, etc. Here, the display unit 32 shown in FIG. 35 is an example of a display unit 32 cut along the cutting line X1-X shown in FIG. 2 shows an example of a cross section corresponding to FIG.

[0274] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A part of 41 has a function of sealing the light emitting element 40. It is preferable to have a light plate 130 .

[0275] The substrate 21 is provided with a touch sensor 22 including wiring 23 and wiring 24, a light emitting element 40, a transistor, and a A resistor 201, a transistor 202, a transistor 205, a capacitance element 203, a connection portion 20 The light emitting element 40 includes a pixel electrode 111, a colored layer 131, and a wiring 35. The light emitting element 40 has a structure in which an L layer 102 and a common electrode 103 are laminated. 21 is a bottom emission type light emitting element that emits light toward the side.

[0276] On the substrate 21, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer The insulating layer 211 is provided with insulating layers such as 215. A part of the insulating layer 211 is a gate of each transistor. One part of the insulating layer functions as a dielectric layer for the capacitance element 203 . The insulating layer 212, the insulating layer 213, and the insulating layer 214 are used to form the transistors, the capacitor 203, and the like. The insulating layer 214 functions as a planarization layer. In the example, insulating layers 212, 213, and 214 are used as insulating layers covering transistors and the like. Although the present invention shows a case having three layers, the present invention is not limited to this and may have four or more layers. The insulating layer 214, which functions as a planarizing layer, may be omitted if not necessary. The insulating layer 215 is formed on the edge of the pixel electrode 111 and on the area between the pixel electrode 111 and the transistor. The insulating layer 215 is provided to cover the contact portion and the like that electrically connects the contact portion and the stator 205. acts as a planarizing layer.

[0277] In addition, the transistors 201, 202, and 205 are partially A conductive layer 221 functions as a gate, and a part of the conductive layer 221 functions as a source electrode or a drain electrode. The conductive layer 222 and the semiconductor layer 231 are formed by processing the same conductive film. The same hatching pattern is applied to multiple layers.

[0278] In FIG. 35, the capacitor 203 is a conductive layer that functions as a gate electrode of the transistor 205. A portion of layer 221, a portion of insulating layer 211, and the source electrode or drain of transistor 205. 2 shows an example in which the conductive layer 222 functions as an inner electrode.

[0279] Here, the pair of conductive layers 222 of the transistor 202 is electrically connected to the capacitor 203. The conductive layer 222 that is not connected functions as a part of the signal line. The conductive layer 221 which functions as the gate electrode of 202 functions as a part of the scan line.

[0280] In FIG. 35, the wiring 23 is formed by processing the same conductive film as the conductive layer 222, and the wiring 24 is An example in which the conductive layer 221 is formed by processing the same conductive film is shown.

[0281] FIG. 35 shows a cross section including one subpixel as an example of the display unit 32. For example, a subpixel includes a transistor 202, a capacitor element 203, a transistor 205, and a light-emitting element. The colored layer 131 is selectively formed to color the pixel electrode 40 and the colored layer 131. By arranging the sub-pixels that exhibit a green color, a sub-pixel that exhibits a green color, and a sub-pixel that exhibits a blue color, Here, the transistor 202, the capacitor element 203, the transistor The pixel circuit (sub-pixel circuit) is configured by the capacitor 205, the pixel electrode 111, and wiring. .

[0282] In FIG. 35, examples of transistors 201, 202, and 205 are shown. Although an example of a structure in which one gate electrode is provided has been shown, the semiconductor layer in which a channel is formed A configuration in which 231 is sandwiched between two gate electrodes may be applied.

[0283] The pixel electrode 111 is provided on the insulating layer 214. The source of the transistor 205 is connected through an opening formed in the insulating layer 213, the insulating layer 212, etc. Also, the source or drain of the transistor 205 is electrically connected to the The other drain is electrically connected to the capacitance element 203 .

[0284] A colored layer 131 is provided on the insulating layer 213. The colored layer 131 is connected to the light emitting element 40. The colored layer 131 is covered with an insulating layer 21 which functions as a planarizing layer. By covering the colored layer 131 with the insulating layer 214, the surface of the pixel electrode 111 This is preferable because it is possible to make the surface roughness approximately flat.

[0285] In the light emitting element 40, the pixel electrode 111 has a function of transmitting visible light, and the common electrode 10 The light emitting element 40 is supported by the substrate 3. The substrate 3 has a function of reflecting visible light. The pixel may be a bottom emission type light emitting element that emits light toward the plate 21 side. Since both the electrode 111 and the common electrode 103 have a function of transmitting visible light, a dual An emission type light emitting element may also be used.

[0286] In addition, in FIG. 35, a light emitting element that exhibits white light can be suitably used as the light emitting element 40. In this way, it is not necessary to create separate light-emitting elements 40 for different sub-pixels, It is possible to realize a very high-definition touch panel. At this time, the light from the light emitting element 40 is When passing through the colored layer 131, light outside the specific wavelength range is absorbed by the colored layer 131. As a result, the extracted light exhibits, for example, red color.

[0287] Here, it is preferable to use a circular polarizing plate as the polarizing plate 130. In particular, as shown in FIG. In addition, when the substrate 21 side is the display surface side, the wiring 23 and wiring 24 constituting the touch sensor are externally In this case, the polarizing plate 130 may reflect light, and the reflected light may be visually recognized. By using a light plate, reflections can be suppressed.

[0288] FIG. 36 shows a cross-sectional configuration example of a touch panel module 10 having a hollow sealing structure. do.

[0289] In FIG. 36, the adhesive layer 141 is disposed on the outer periphery of the substrate 31 without covering the light emitting element 40. In addition, a space 142 is provided between the common electrode 103 and the substrate 31.

[0290] The space 142 may be filled with air, or may be filled with an inert gas such as a rare gas or nitrogen gas. It is preferable that the space 142 is filled with air. If the pressure is too high, the space 142 expands due to the operating environment (e.g., air pressure and temperature), and the substrate 31 or The expansion of the substrate 21 can be suppressed. On the other hand, the space 142 has a positive pressure relative to the atmospheric pressure. If there is any, impurities such as moisture may enter the substrate 31, the substrate 21, the adhesive layer 141, or the gaps between them. Therefore, diffusion into space 142 can be suppressed.

[0291] FIG. 36 shows an example in which a desiccant 143 is provided between the substrate 31 and the common electrode 103. At this time, the thickness of at least the portion of the substrate 31 that overlaps the display unit 32 is set to be thicker than the outer periphery. When the desiccant 1 is formed thin, the thickness of the touch panel module 10 can be increased without increasing the thickness of the touch panel module 10. 43 may be applicable.

[0292] The desiccant 143 may be, for example, an oxide of an alkaline earth metal (calcium oxide or barium oxide). Materials that adsorb moisture by chemical adsorption, such as tungsten, sodium, etc., can be used. The method uses substances that adsorb moisture through physical adsorption, such as zeolite and silica gel. Good too.

[0293] The above is the description of the cross-sectional configuration example 4-1.

[0294] [Cross-sectional configuration example 4-2] FIG. 37 shows an example in which the colored layer 131 is formed on a different substrate.

[0295] In FIG. 37, a colored layer 131 and a light-shielding layer 132 are formed on a substrate 161 . Furthermore, the substrate 161 is adhered to the substrate 21 by an adhesive layer 251 .

[0296] The colored layer 131 is provided at a position overlapping at least the light emitting element 40. 32 denotes a wiring 23, a wiring 24, a transistor 202, a transistor 205, a capacitor 20 3, it is provided at a position overlapping with the transistor 201 etc.

[0297] The light-shielding layer 132 has a function of blocking visible light.

[0298] With this configuration, even when the substrate 21 side is used as the display surface, the wiring 2 3. The reflection of external light from the wiring 24, etc. can be suppressed, and contrast can be improved. do.

[0299] At this time, the substrate 161 can also be used as a protective substrate to protect the substrate 21 and the like. In that case, it is preferable to provide a protective layer (ceramic coat, etc.) on the substrate. The protective layer may be, for example, silicon oxide, aluminum oxide, yttrium oxide, or yttria. Inorganic insulating materials such as yttria zirconate (YSZ) can be used. Tempered glass may be used. Tempered glass is made by physical strengthening, such as by ion exchange or air cooling. Alternatively, a material that has been subjected to a chemical treatment and has a compressive stress applied to its surface can be used.

[0300] FIG. 38 shows a colored layer 131 and a light-shielding layer 132 on the opposite side of the substrate 21 from the side on which the wiring 23 and the like are formed. This shows an example of forming 132.

[0301] At this time, in order to protect the colored layer 131 and the light-shielding layer 132, the substrate 1 is attached with an adhesive layer 251. 62 may be provided.

[0302] [Cross-sectional configuration example 4-3] FIG. 39 shows an example of a cross-sectional configuration in which a light-emitting element 40 is fabricated for each sub-pixel.

[0303] In FIG. 35 and the like, the EL layer 102 is uniformly provided, whereas in FIG. 02 has an island-like top surface.

[0304] In the example shown in FIG. 39, the EL layer 102 can be made for each subpixel. The light emitting element 40 provided in the pixel is a light emitting element that exhibits a color different from that of the adjacent sub-pixel. Therefore, full color display can be achieved without providing the colored layer 131. can.

[0305] [Cross-sectional configuration example 4-4] FIG. 40 shows an example in which a top emission type light emitting element is applied.

[0306] The light emitting element 40 shown in FIG. 40 emits light toward the substrate 31 side. Therefore, the substrate 31 side is the display surface. The polarizing plate 130 is located on the outer surface of the substrate 31.

[0307] The pixel electrode 111 of the light emitting element 40 has a function of reflecting visible light. has the function of blocking visible light.

[0308] The substrate 31 is provided with a colored layer 131, a light-shielding layer 132, and the like.

[0309] FIG. 40 shows an example in which a spacer 124 is provided on the substrate 31 side. The spacer 124 has a function of adjusting the distance between the substrate 21 and the substrate 31. 1 shows a case where a gap is formed between the common electrode 103 and the insulating layer 215. In this embodiment, the spacer 124 is provided on the substrate 31 side. However, the spacer 1 may be provided on the substrate 21 side (for example, on the insulating layer 215). Granular spacers may be used instead of 24. The granular spacers are made of a material such as silica. However, it is preferable to use a material having elasticity such as organic resin or rubber. At this time, the granular spacers may become crushed in the vertical direction.

[0310] When a top-emission type light-emitting element 40 is applied as shown in FIG. 11 is provided to cover the transistor 202, the transistor 205, the capacitor element 203, etc. This is preferable because it allows the aperture ratio of the pixel to be increased.

[0311] 40 shows an example in which the common electrode 103 has an opening. 23 and 24. In this way, when the substrate 31 side is used as the touch surface, Even in this case, a conductor capable of supplying a predetermined potential between the touch surface and the wiring 23 or the wiring 24 is provided. It is preferable to provide an area where the conductive layer is not located. Alternatively, the electric field from the wiring 24 is not blocked, and the wiring 23 and the wiring 24 can be connected by touch or other operations. The change in capacitance between the lines 24 can be increased, thereby increasing the detection sensitivity. can be done.

[0312] At this time, a region where the EL layer 102 is not positioned at a position overlapping the wiring 23 or the wiring 24 is provided. In this case, it is particularly preferable that the end of the EL layer 102 is covered with the common electrode 103. When the EL layer 102 is disposed so as to be in contact with the substrate, the EL layer 102 is not exposed, thereby improving reliability.

[0313] Furthermore, when the light-shielding layer 132 having a plurality of openings is uniformly provided over the display unit 32, The light-shielding layer 132 preferably has insulating properties. Since the light-shielding layer 132 has insulating properties, the electric field from the wiring 23 or the wiring 24 is prevented from passing through the light-shielding layer 132. Since the light is not blocked by the obstacle, the detection sensitivity can be improved.

[0314] [Modifications] FIG. 41 shows a touch panel using a pair of flexible substrates 171 and 172. 41 shows a cross-sectional configuration example of the module 10. The touch panel module 10 shown in FIG. Part of the surface can be bent.

[0315] In FIG. 41, a substrate 171, an adhesive layer 251, and an insulating layer 216 are provided instead of the substrate 21. Moreover, a substrate 172 is used in place of the substrate 31.

[0316] A conductive layer 221 and an insulating layer 211 are provided on one surface of the insulating layer 216. On the opposite side of layer 216 , substrate 171 is attached by adhesive layer 251 .

[0317] The substrate 171 and the substrate 172 can each be made of a flexible material. The substrates 171 and 172 are protective layers for protecting the surface of the touch panel module 10. The substrate 171 and the substrate 172 may function as transistors, light emitting devices, etc. It does not have to have a function of supporting elements, wiring, or the like.

[0318] The insulating layer 216 has a function of suppressing the diffusion of impurities such as water and hydrogen. preferable.

[0319] In the example shown in FIG. 41, an insulating layer 217 is provided to cover the common electrode 103. The insulating layer 217 prevents impurities such as water from diffusing into the common electrode 103, the EL layer 102, etc. It has the function of suppressing this.

[0320] In particular, as shown in FIG. 41, a common electrode 103 is provided to cover the end of the EL layer 102 and is an insulating layer. It is preferable that an edge layer 217 is provided over the edge of the common electrode 103. This makes it possible to more effectively prevent impurities from diffusing into the common electrode 103 and the EL layer 102.

[0321] The touch panel module 10 shown in FIG. 41 is provided with an insulating layer 216 and an insulating layer 217. The transistors and the light emitting element 40 are sandwiched between the substrate 171. The substrate 172, the adhesive layer 251, the adhesive layer 141, etc. are made of a material that easily diffuses impurities such as water and hydrogen. Even if a material is used, the inner side (the transistors or the light emitting element 40 side) The insulating layers 216 and 217 located in the upper and lower portions of the insulating layer 216 and the insulating layer 217 can suppress the diffusion of these impurities. Therefore, reliability can be improved.

[0322] FIG. 42 shows an example in which a top-emission type light-emitting element is applied to the light-emitting element 40. In FIG. 42, instead of the substrate 31 in FIG. 40, an insulating layer 218, an adhesive layer 252, and a substrate 172. Also, instead of the substrate 21, a substrate 171, an adhesive layer 251, and an insulating layer It has an edge layer 216 .

[0323] The colored layer 131, the light-shielding layer 132, the spacer 124, etc. are provided on one side of the insulating layer 218. The other surface of the insulating layer 218 is bonded to the substrate 172 by an adhesive layer 252. It is attached.

[0324] The insulating layer 218 is made of a material that is difficult for impurities such as water to diffuse into, similar to the insulating layer 216. It is preferred.

[0325] In this manner, the light emitting element 40 is disposed between the insulating layer 216 and the insulating layer 217 which function as a barrier layer. By sandwiching the various transistors, a highly reliable touch panel module 10 is realized. can.

[0326] The above is a description of the modified example.

[0327] [Example of manufacturing method] Here, a method for producing a flexible touch panel will be described.

[0328] For the sake of convenience, the components including pixels and circuits, the components including optical members such as color filters, and the The structure including the electrodes and wiring that constitute the touch sensor is called the element layer. For example, the display element is used for wiring electrically connected to the display element, pixels, and circuits. The semiconductor device may include an element such as a transistor.

[0329] In addition, a support having an insulating surface on which an element layer is formed (for example, as shown in FIG. 41 and FIG. 42) is provided. In this case, the substrate 171 or the substrate 172 will be referred to as the substrate.

[0330] As a method for forming an element layer on a substrate having a flexible insulating surface, A method for forming a contact layer, and a method for forming a contact layer on a support base material different from a substrate, and then forming the contact layer on the support base material. and a method of peeling off the support base material and transferring the element layer onto the substrate.

[0331] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed in a state where the substrate is fixed to the support substrate, the substrate can be easily transported within and between devices. This is preferable because it makes things easier.

[0332] In addition, when a method is used in which an element layer is formed on a supporting base material and then transferred to a substrate, the supporting base material is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support base material and the element layer are peeled off and transferred to a substrate. Materials may be selected such that release occurs at the interface of the edge layer or in the release layer.

[0333] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer containing a material is laminated, and silicon nitride or silicon oxynitride is used as an insulating layer on the peeling layer. Alternatively, it is preferable to use a multi-layered structure of silicon oxide nitride or the like. The use of the above is preferable because it increases the degree of freedom in the process of forming the element layer.

[0334] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by delaminating the peeling interface. The peeling may be performed by dropping a liquid on a portion of the surface and allowing it to penetrate into the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, utilizing the difference in thermal expansion.

[0335] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer. For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. At this time, a part of the organic resin is locally heated using a laser beam or the like, Or, the organic resin is peeled off by physically cutting or penetrating a part of the organic resin with a sharp object. Alternatively, the starting point of separation may be formed, and the separation may be performed at the interface between the glass and the insulating layer. A metal layer is placed between insulating layers made of a resin, and a current is passed through the metal layer to heat it. By doing so, the separation may be performed at the interface between the metal layer and the insulating layer. A layer of light-absorbing material (metal, semiconductor, insulator, etc.) is placed between insulating layers made of organic resin. The layer is then irradiated with light such as laser light to locally heat it, forming a starting point for peeling. In the method described here, an insulating layer made of an organic resin may be used as a substrate. can be done.

[0336] For example, in the case of the configuration shown in FIG. 41, a first release layer and an insulating layer 216 are formed on a first support base material. After forming the first support base and the second support substrate, the upper layer structure is formed. 172 is attached by adhesive layer 141. Then, the interface between the first release layer and the insulating layer 216 The first support base material and the first release layer are removed by peeling them off with a and are bonded together with an adhesive layer 251.

[0337] For example, in the case of the configuration shown in FIG. 42, a first release layer and an insulating layer 21 are formed on a first support base material. 6 is formed in order, and then the upper layer structure is formed. After forming the second release layer and the insulating layer 218 in this order on the support substrate, the structure above them is Next, the first support base material and the second support base material are bonded together with an adhesive layer 141. Thereafter, the second release layer is peeled off at the interface between the second release layer and the insulating layer 218 to form the second support substrate and The release layer 2 is removed, and the insulating layer 218 and the substrate 172 are bonded together with the adhesive layer 252. In addition, the first release layer is peeled off at the interface between the first release layer and the insulating layer 216, so that the first support base material and the first release layer are separated. The peeled layer is removed, and the insulating layer 216 and the substrate 171 are bonded together with the adhesive layer 251. The separation and bonding may be performed on either side first.

[0338] The above is a description of the method for producing a flexible touch panel.

[0339] [About each component] Each of the above components will be described below.

[0340] 〔substrate〕 The substrate of the touch panel can be made of a material having a flat surface. The substrate from which the light is extracted is made of a material that transmits the light. For example, glass or quartz is used. Materials such as ceramic, sapphire, and organic resin can be used.

[0341] By using a thin substrate, the touch panel can be made lighter and thinner. Furthermore, by using a substrate having a thickness sufficient to provide flexibility, a flexible touch panel can be obtained. This can be achieved.

[0342] Examples of glass include non-alkali glass, barium borosilicate glass, and aluminophore glass. Usable materials include silicate glass.

[0343] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the above substrate, a metal substrate can be used. Metal and alloy materials have high thermal conductivity. Since heat can be easily conducted to the entire substrate, localized temperature rises in the touch panel are suppressed. In order to obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or less. The thickness is preferably at most 200 μm, and more preferably at least 20 μm and no greater than 50 μm.

[0344] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys or stainless steel are preferably used. It is possible.

[0345] In addition, the surface of the metal substrate is oxidized or an insulating film is formed on the surface to perform insulation treatment. For example, a coating method such as spin coating or dipping, an electrodeposition method, or the like may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in air or heating it, an oxide film is formed on the surface of the substrate by anodizing, etc. This is also fine.

[0346] Examples of materials having flexibility and transparency to visible light include materials having flexibility. Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. ×10 -6 Polyamide-imide resin, polyimide resin, PET, etc., with a molecular weight of 0.1 to 1.0 kg / K or less, are preferably used. In addition, a substrate made of a fiber body impregnated with resin (also called a prepreg) or an inorganic It is also possible to use a substrate in which a filler is mixed into the organic resin to reduce the thermal expansion coefficient. Since the substrate using such a material is light in weight, the touch panel using the substrate can also be made light in weight. can be done.

[0347] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is made flexible. As a substrate having flexibility, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage caused by bending or local pressure. stomach.

[0348] A hard coat layer (e.g. For example, a silicon nitride layer, or a layer of a material capable of dispersing pressure (for example, an aramid resin layer, etc.) In addition, the deterioration of the life of the display element due to moisture, etc. can be suppressed. For this purpose, an insulating film with low water permeability may be laminated on a flexible substrate. Inorganic insulating materials such as silicon oxide, silicon oxynitride, aluminum oxide, and aluminum nitride can be used.

[0349] The substrate may be formed by laminating a plurality of layers. In particular, the substrate may have a glass layer. This improves the barrier properties against water and oxygen, making it possible to create a highly reliable touch panel. Also, thin glass, metal, etc. that has flexibility can be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded together may be used.

[0350] For example, a substrate having a glass layer, an adhesive layer, and an organic resin layer laminated thereon from the side closest to the display element is used. The thickness of the glass layer is preferably 20 μm or more and 200 μm or less. The thickness of the glass layer is 25 μm or more and 100 μm or less. It is possible to simultaneously achieve high barrier properties and flexibility. The thickness of the organic resin layer is 10 μm. The thickness of such an organic resin is set to be 200 μm or more, and preferably 20 μm or more and 50 μm or less. By providing this layer, it is possible to suppress breakage and cracks in the glass layer and improve the mechanical strength. By applying such a composite material of glass material and organic resin to a substrate, This makes it possible to produce a highly reliable and flexible touch panel.

[0351] [Transistor] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. The above describes the case where a bottom-gate transistor is used. is.

[0352] Note that there is no particular limitation on the structure of a transistor included in a touch panel of one embodiment of the present invention. For example, it may be a planar type transistor or a staggered type transistor. Alternatively, a top-gate or bottom-gate transistor may be used. Alternatively, the transistor may have a gate electrode above and below the channel. It may be provided.

[0353] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0354] In addition, the semiconductor material used in the transistor is, for example, a Group 14 element (silicon For the semiconductor layer, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0355] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it is possible to reduce the current in the off state of the transistor.

[0356] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal parts. CAAC-OS (C-Axis Aligned Crystal lline Oxide Semiconductor, or C-Axis Ali gned and AB-plane Anchored Crystalline It is preferable to use a semiconductor material having a high conductivity type, such as a ferroelectric material.

[0357] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0358] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the capacitance, thereby achieving a highly reliable transistor.

[0359] In addition, a transistor using an oxide semiconductor having a larger band gap than silicon is The low off-state current allows the charge stored in the capacitor connected in series with the transistor to be maintained for a long time. By applying such a transistor to a pixel, This makes it possible to stop the driving circuit while maintaining the gradation of each pixel. This makes it possible to realize a display device with reduced power consumption.

[0360] The semiconductor layer may be, for example, at least indium, zinc, and M (aluminum, titanium, gallium). Umium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium The film may include a film represented by In-M-Zn oxide containing metals such as tungsten or hafnium. In addition, in order to reduce variation in electrical characteristics of a transistor using the oxide semiconductor, Therefore, it is preferable to include a stabilizer therewith.

[0361] The stabilizer includes the metals listed under M above, such as gallium, tin, hafnium, etc. Other stabilizers include tungsten, aluminum, or zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Examples include thulium, ytterbium, and lutetium.

[0362] Examples of oxide semiconductors constituting the semiconductor layer include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-type oxides, In-Er-Zn-type oxides, In-Tm-Zn-type oxides, In-Yb-Zn In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide can be used. can.

[0363] In this case, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be present.

[0364] The semiconductor layer and the conductive layer may contain the same metal element among the above oxides. By using the same metal element for the semiconductor layer and the conductive layer, the manufacturing cost can be reduced. For example, the manufacturing cost can be reduced by using metal oxide targets with the same metal composition. In addition, the etching gas or the etching gas used in processing the semiconductor layer and the conductive layer can be However, the semiconductor layer and the conductive layer may be made of the same metal element. For example, the composition of a transistor or a capacitor may differ depending on the type of the semiconductor device. During the process, metal elements in the film may be released, resulting in a different metal composition.

[0365] When the semiconductor layer is an In-M-Zn oxide, In and M, excluding Zn and O, The atomic ratio of In is preferably In when the sum of In and M is 100 atomic %. is higher than 25 atomic %, M is less than 75 atomic %, and more preferably In is 34 atomic% or higher and M less than 66 atomic%.

[0366] The semiconductor layer has an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably In this way, the energy gap of oxide semiconductors is wide. This makes it possible to reduce the off-state current of the transistor.

[0367] The thickness of the semiconductor layer is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less. and more preferably, from 3 nm to 50 nm.

[0368] When the semiconductor layer is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The atomic ratio of the metal elements in the sputtering target satisfies In≧M, Zn≧M. The atomic ratio of the metal elements in such a sputtering target is preferably In: M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2 Preferably, the atomic ratio of In:M:Zn is 4:2:3. The atomic ratio of the metal elements contained in the sputtering target is included as an error. Includes a fluctuation of minus 40%.

[0369] For the semiconductor layer, an oxide semiconductor film having a low carrier density is used. For example, , the carrier density is 1×10 17 pieces / cm 3 Less than or equal to 1×10 15 pieces / cm 3 below , and more preferably 1×10 13 pieces / cm 3 Less than or equal to 1×10 11 pieces / cm 3 The following oxide semiconductor film can be used. This means that the impurity concentration is low and the defect level is low. Since the potential density is low, it can be said that the oxide semiconductor has stable characteristics.

[0370] In addition, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use a material with an appropriate composition according to the required properties (e.g., the resultant mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer are determined. It is preferable to appropriately set the density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. stomach.

[0371] When silicon or carbon, which is one of the group 14 elements, is included in the semiconductor layer, This causes oxygen vacancies in the semiconductor layer, resulting in n-type conductivity. The carbon concentration (obtained by secondary ion mass spectrometry) was set to 2 × 10 18 atoms / cm 3 Less than or equal to 2×10 17 atoms / cm 3 The following applies.

[0372] In addition, when alkali metals and alkaline earth metals combine with oxide semiconductors, they generate carriers. This may result in an increase in the off-state current of the transistor. Alkali metal or alkaline earth metals in the body layer obtained by secondary ion mass spectrometry The concentration of the genus is 1×10 18 atoms / cm 3 Less than or equal to 2×10 16 atoms / cm 3 To the following:

[0373] In addition, when nitrogen is contained in the semiconductor layer, electrons that act as carriers are generated, and the carrier density As a result, transistors using oxide semiconductors containing nitrogen For example, the results obtained by secondary ion mass spectrometry The nitrogen concentration is 5 x 10 18 atoms / cm 3 It is preferable to do the following:

[0374] The semiconductor layer may also have a non-single crystal structure, for example. -OS, polycrystalline structure, microcrystalline structure, or amorphous structure. In non-single crystal structure, non The crystalline structure has the highest density of defect states, while the CAAC-OS has the lowest density of defect states.

[0375] The semiconductor layer may have, for example, an amorphous structure. The molecular arrangement is disordered and has no crystalline components. Alternatively, an oxide film with an amorphous structure is, for example, It has a completely amorphous structure and does not have any crystalline parts.

[0376] In addition, the semiconductor layer may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The composite film may have a single layer structure including two or more of the above-mentioned regions, or It may have a laminated structure.

[0377] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even if the display panel has extremely high resolution, the gate drive circuit and the source drive circuit can be This makes it possible to form the circuits and pixels on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0378] The bottom-gate transistor described in this embodiment can reduce the manufacturing process. In addition, the use of amorphous silicon in this case is preferable compared to polycrystalline silicon. Since it can be formed at low temperatures, it is highly resistant and can be used as a material for wiring and electrodes below the semiconductor layer, and as a material for substrates. The possibility of using low-heat materials allows for a wider range of material choices. For example, a glass substrate having an extremely large area can be suitably used. The top-gate transistor shown as an example is easy to form impurity regions in a self-aligned manner. This is preferable because it can reduce the variation in characteristics. This is suitable for use with silicon or single crystal silicon.

[0379] [Conductive Layer] In addition to the gate, source, and drain of the transistor, the various wiring that makes up the touch panel Materials that can be used for conductive layers such as wires and electrodes include aluminum, titanium, Chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, Examples of the material include metals such as tungsten, or alloys that contain tungsten as the main component. Films containing these materials can be used as single layers or as laminate structures. A single-layer structure of an aluminum film containing titanium, a two-layer structure of an aluminum film laminated on a titanium film, Two-layer structure with aluminum film laminated on tungsten film, copper-magnesium-aluminum Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on a titanium film, a titanium nitride film, and an aluminum film are laminated on top of that. An aluminum film or a copper film is laminated, and then a titanium film or a titanium nitride film is formed on the aluminum film or a copper film. A three-layer structure consisting of a molybdenum film or molybdenum nitride film and an aluminum film or A three-layer structure is formed by laminating a copper film on a silicon substrate and then forming a molybdenum film or a molybdenum nitride film on the copper film. The structure includes transparent conductive materials including indium oxide, tin oxide, or zinc oxide. In addition, when copper containing manganese is used, the controllability of the shape by etching is improved. Therefore, it is preferable.

[0380] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as the various wiring and electrodes that make up the touch panel, and the The present invention can also be used for electrodes (such as pixel electrodes and common electrodes).

[0381] [Insulating layer] Examples of insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include For example, resins such as acrylic and epoxy, resins with siloxane bonds, silicon oxide, Inorganic insulation such as silicon oxynitride, silicon oxynitride, silicon nitride, and aluminum oxide Materials can also be used.

[0382] In addition, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the device. Can be controlled.

[0383] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0384] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0385] [Light-emitting element] The light-emitting element may be a self-emitting element that is illuminated by a current or a voltage. The category includes devices whose light intensity can be controlled. For example, light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0386] The light-emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0387] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole transporting material, hole blocking material, high electron transporting material, electron injection The material contains a highly conductive material or a bipolar material (a material with high electron transport and hole transport properties). The insulating layer may further include a layer containing the insulating layer.

[0388] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer may be formed by deposition (including vacuum deposition). The insulating layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.

[0389] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are These molecules recombine and the luminescent material contained in the EL layer emits light.

[0390] When a white-emitting light-emitting element is used as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. For example, the light emitted by two or more luminescent materials may be of complementary colors. By selecting a light-emitting material so as to satisfy the above relationship, white light can be obtained. For example, Luminescent substances that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that emit light containing two or more of the spectral components of R, G, and B, It is preferable that the spectrum of the light emitted from the light emitting element is in the visible light region. A light emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) is used. It is preferable to use a material having a peak in the yellow wavelength region. Preferably, the material has spectral components in the green and red wavelength regions as well.

[0391] More preferably, the EL layer is a layer including a light-emitting material that emits light of one color and a layer including a light-emitting material that emits light of another color. It is preferable that the EL layer has a laminated structure with a light-emitting layer containing a light-emitting material. The light-emitting layers in the light-emitting device may be laminated in contact with each other, and may include any light-emitting material. For example, the fluorescent light-emitting layer and the phosphorescent light-emitting layer may be laminated with a region between them. The fluorescent or phosphorescent layer may contain the same material (e.g., host material, assist material) as the fluorescent or phosphorescent layer. In addition, a region that does not contain any light-emitting material may be provided. This makes it easier to fabricate the element and reduces the driving voltage.

[0392] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer interposed therebetween to form a tandem element.

[0393] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide, indium It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. In addition, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metallic materials such as iron, cobalt, copper, palladium, or titanium, including these metallic materials Alloys or nitrides of these metal materials (e.g., titanium nitride) may also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, the electrical conductivity can be increased, which is preferable. Graphene or the like may also be used. .

[0394] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above-mentioned metal materials and alloys may be used. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. An alloy containing silver and copper, palladium, or magnesium may also be used. The alloy is preferable because of its high heat resistance. Furthermore, an aluminum film or an aluminum alloy film By laminating a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film is suppressed. Examples of materials for such metal films and metal oxide films include titanium and titanium oxide. In addition, the conductive film that transmits visible light and a film made of a metal material are laminated. For example, a laminated film of silver and indium tin oxide, an alloy of silver and magnesium and indium For example, a laminated film of aluminum tin oxide can be used.

[0395] The electrodes may be formed by vapor deposition or sputtering. The shape is created using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method. It can be achieved.

[0396] [Adhesive layer] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0397] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that adsorbs moisture by chemical adsorption, such as calcium chloride or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture may enter the element. This is preferable because it can suppress the occurrence of the problem of the noise and improve the reliability of the display panel.

[0398] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, and di Ruthenium, etc. can be used.

[0399] [Connection Layer] The connection layer is made of anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0400] [Coloring layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, or dyes, including resin materials and the like.

[0401] [Light-shielding layer] Materials that can be used for the light-shielding layer include carbon black, metal oxides, composite oxides including solid solutions of multiple metal oxides, etc. Also, a laminated film of a film containing the material of the coloring layer can be used for the light-shielding layer. For example, a laminated structure of a film containing the material used for a coloring layer that transmits a certain color of light and a film containing the material used for a coloring layer that transmits another color of light can be used. By sharing the materials of the coloring layer and the light-shielding layer, the device can be shared and the process

[0402] The above is the description of each component.

[0403] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0404] (Embodiment 2) [Configuration of CAC] Hereinafter, the configuration of the CAC (Cloud Aligned Complementary)-OS that can be used in one aspect of the present invention will be described.

[0405] The CAC is, for example, a configuration of a material in which the elements constituting the oxide semiconductor are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. In the following, in the oxide semiconductor, one or more metal elements are unevenly distributed, and the region having the metal element is 0.5 nm or more and 10 nm or less, preferably 1 nm or more The state where particles are mixed in a size of 2 nm or less or close to that size is also called a mosaic or patch state. say.

[0406] For example, CAC-IG in In-Ga-Zn oxide (hereinafter also referred to as IGZO) ZO is indium oxide (InO X1 (X1 is a real number greater than 0). ), or indium zinc oxide (In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 is a real number greater than 0.) and gallium oxide (GaO X3 (X3 is 0) or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0).) By separating the layers, a mosaic pattern is formed. X1 , or In X2 Zinc Y2 O Z 2 is uniformly distributed in the film (hereinafter, also referred to as a cloud-like structure).

[0407] In other words, CAC-IGZO is GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide having a structure in which a region in which In this specification, for example, the element M of the first region is an element of In. The atomic ratio of In to the element M in the first region is greater than the atomic ratio of In to the element M in the second region. has a higher In concentration than the first region.

[0408] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are cases. As a representative example, InGaO3(ZnO) m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1 ≤ x0 ≤ 1, m0 is an arbitrary number). Crystalline compounds represented by these are included.

[0409] The above crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. Note that the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without orientation in the a-b plane.

[0410] On the other hand, CAC relates to the material composition. CAC refers to a structure in which, in a material composition containing In, Ga, Zn, and O, a region observed as nanoparticle-like with Ga as a main component in part and a region observed as nanoparticle-like with In as a main component in part are randomly scattered in a mosaic pattern. Therefore, in CAC, the crystal structure is a secondary element.

[0411] Note that CAC does not include a laminated structure of two or more types of films with different compositions. For example, a structure composed of two layers, a film with In as a main component and a film with Ga as a main component, is not included.

[0412] Note that there may be cases where no clear boundary can be observed between a region where GaO X3 is the main component and a region where In X2 Zn Y2 O Z2 , or InO X1 is the main component.

[0413] <Analysis of CAC-IGZO> Next, the oxide semiconductor film formed on the substrate was measured using various measurement methods. This article explains:

[0414] <Sample composition and preparation method> Nine samples according to one embodiment of the present invention are described below. Each sample is The substrate temperature and oxygen gas flow rate ratio during deposition of the nitride semiconductor are varied. The sample has a structure including a substrate and an oxide semiconductor on the substrate.

[0415] The preparation method of each sample will be described.

[0416] First, a glass substrate is used as the substrate. Then, the glass is A 100 nm-thick In-Ga-Zn oxide is formed as an oxide semiconductor on a silicon substrate. The deposition conditions were a pressure of 0.6 Pa in the chamber and an oxide target. (In:Ga:Zn=4:2:4.1 [atomic ratio]) was used. An AC power of 2500 W is supplied to an oxide target placed in the chamber.

[0417] As a condition for forming an oxide film, the substrate temperature is set to a temperature at which the substrate is not intentionally heated (hereinafter The temperature was set to 130°C, 170°C, or 180°C. The flow rate ratio of oxygen gas to the gas (hereinafter referred to as oxygen gas flow rate ratio) was set to 10%, 30%, Or, 100%, nine samples are prepared.

[0418] <Analysis by X-ray diffraction> In this section, X-ray diffraction (XRD) was performed on nine samples. The results of the measurement are described below. The XRD device used was a Bruker product. D8 ADVANCE was used. The conditions were θ / In 2θ scan, the scanning range is 15 deg. to 50 deg., and the step width is 0.02d. For example, the scanning speed was 3.0 deg. / min.

[0419] Figure 55 shows the results of measuring the XRD spectrum using the out-of-plane method. In addition, in Figure 55, the upper row shows the measurement results for a sample where the substrate temperature during film formation was 170°C. The middle row shows the measurement results for a sample with a substrate temperature of 130°C during film formation, and the lower row shows the film formation The left column shows the results of measurements taken with the substrate temperature at RT. The center column shows the results of measurements taken with the gas flow rate ratio at 10%. The right column shows the results for the sample with a 30% oxygen gas flow rate, and the right column shows the results for the sample with a 100% oxygen gas flow rate. The measurement results are shown below.

[0420] The XRD spectrum shown in FIG. 55 shows that the film thickness increases when the substrate temperature is increased or when the amount of oxygen used during film formation is increased. By increasing the ratio of the atomic gas flow rate, the peak intensity around 2θ=31° increases. The peak near 2θ=31° indicates that the c-axis is oriented in the direction approximately perpendicular to the surface on which the film is formed or the upper surface. The c-axis aligned crystal of IGZO compound (CAAC) It is also called line-IGZO.

[0421] In addition, the XRD spectrum shown in FIG. 55 shows that the substrate temperature during film formation was low or the oxygen gas The smaller the flow rate ratio, the less clear the peak. Alternatively, the sample with a small oxygen gas flow rate ratio had ab-plane and c-axis orientations in the measurement area. It can be seen that no direction is visible.

[0422] Analysis by electron microscope In this section, the samples were prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. ,HAADF(High-Angle Annular Dark Field)-S TEM(Scanning Transmission Electron Micro The results of the observation and analysis using the HAADF-scope are described below (hereafter, HAADF- Images obtained by STEM are also called TEM images.

[0423] Planar images obtained by HAADF-STEM (hereinafter also referred to as planar TEM images) and The results of image analysis of the cross-sectional images (hereinafter also referred to as cross-sectional TEM images) will be explained. The TEM images were observed using a spherical aberration correction function. The images were taken using an atomic resolution analytical electron microscope, JEM-ARM200F, manufactured by JEOL Ltd. The specimen was irradiated with an electron beam having an acceleration voltage of 200 kV and a beam diameter of approximately 0.1 nmφ.

[0424] FIG. 56(A) shows a film formed at a substrate temperature of RT and an oxygen gas flow rate of 10%. The planar TEM image of the sample is shown in Fig. 56(B). The cross-sectional TEM image of a sample prepared with a gas flow rate of 10%.

[0425] <Analysis of electron diffraction patterns> In this section, the samples were prepared at a substrate temperature of RT during film formation and an oxygen gas flow rate of 10%. By irradiating the sample with an electron beam with a probe diameter of 1 nm (also called a nano-beam electron beam), The results of acquiring sagittal diffraction patterns will now be described.

[0426] As shown in FIG. 56(A), the substrate temperature during film formation was RT, and the oxygen gas flow rate was 10%. In the planar TEM image of the sample, black spots a1, a2, a3, a4, and The electron diffraction pattern shown at point a5 is observed. The line is projected and moved at a constant speed from the 0 second position to the 35 second position. The results for point a1 are shown in Fig. 56(C), the results for black point a2 are shown in Fig. 56(D), and the results for black point a3 are shown in Fig. (E), the results for black point a4 are shown in Figure 56(F), and the results for black point a5 are shown in Figure 56(G).

[0427] From Figure 56(C), Figure 56(D), Figure 56(E), Figure 56(F), and Figure 56(G) In the image, a circular (ring-shaped) area of ​​high brightness can be observed. Multiple spots can be observed.

[0428] In addition, as shown in FIG. 56(B), the substrate temperature RT during film formation and the oxygen gas flow rate ratio of 10% In the cross-sectional TEM image of the sample prepared in the above, black spots b1, b2, b3, b4, and Observe the electron diffraction patterns shown by black spots b1 and b5. The results for point b2 are shown in Figure 56(I), the results for black point b3 are shown in Figure 56(J), and the results for black point b4 are shown in Figure 56(K). (K) and the results for black point b5 are shown in Figure 56(L).

[0429] From Figure 56(H), Figure 56(I), Figure 56(J), Figure 56(K), and Figure 56(L) A ring-shaped area of ​​high brightness can be observed. In addition, multiple spots can be observed in the ring-shaped area. It can be measured.

[0430] For example, for a CAAC-OS having an InGaZnO4 crystal, When an electron beam with a probe diameter of 300 nm is incident on the row, the (00 9) The diffraction pattern includes spots due to the CAAC-OS It has been found that the film has a c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the surface on which the film is formed or the upper surface. On the other hand, an electron beam with a probe diameter of 300 nm is incident perpendicularly to the surface of the same sample. In other words, the CAAC-OS has a ring-shaped diffraction pattern along the a-axis and It is clear that the b-axis has no orientation.

[0431] In addition, a nanocrystalline oxide semiconductor nc-OS) with a large probe diameter When electron diffraction is performed using an electron beam (e.g., 50 nm or larger), a halo pattern is observed. A diffraction pattern is observed. In addition, a small probe diameter electron beam (e.g. When nanobeam electron diffraction is performed using a material with a diameter of less than 50 nm, bright spots are observed. In addition, when nanobeam electron diffraction was performed on the nc-OS, a circular (ring-shaped) In some cases, a bright area is observed. In addition, multiple bright spots are observed in a ring-shaped area. It may be measured.

[0432] Electron beam diffraction of a sample prepared at substrate temperature RT during film formation and oxygen gas flow rate of 10% The pattern has a ring-shaped area of ​​high brightness and multiple bright points in the ring area. The sample was fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. The folding pattern is nc-OS, and there is no orientation in the planar direction or cross-sectional direction. stomach.

[0433] From the above, oxide semiconductors formed at low substrate temperatures or with a small oxygen gas flow rate are The oxide semiconductor film has a structure that is clearly different from that of an amorphous oxide semiconductor film and that of a single crystal oxide semiconductor film. It can be assumed that the substance has the following properties.

[0434] ≪Elemental analysis≫ In this article, we will discuss energy dispersive X-ray spectroscopy (EDX). EDX mapping was obtained and evaluated using vective X-ray spectroscopy. By evaluating the film formation, the substrate temperature was set at RT and the oxygen gas flow rate was set at 10%. The results of elemental analysis of the samples are described below. The energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used as the analyzer. A Si drift detector is used to detect the X-rays emitted from the sample.

[0435] In EDX measurement, each point in the analysis area of ​​the sample is irradiated with an electron beam, The energy and frequency of the characteristic X-rays of the sample are measured, and the EDX spectrum corresponding to each point is obtained. In this embodiment, the peaks in the EDX spectrum at each point are determined as electron transitions to the L shell of the In atom. electron transition to the K shell of Ga atom, electron transition to the K shell of Zn atom, and electron transition to the K shell of O atom The ratio of each atom at each point is calculated. By performing EDX analysis on the target area, an EDX map showing the distribution of the ratio of each atom is obtained. It is possible.

[0436] Figure 57 shows the sample fabricated at a substrate temperature of RT and an oxygen gas flow rate of 10% during film formation. FIG. 57(A) shows EDX mapping of Ga atoms. (The ratio of Ga atoms to the total atoms is in the range of 1.18 to 18.64 [atomic%].) (B) shows the EDX mapping of In atoms (the ratio of In atoms to all atoms). The ratio of children is in the range of 9.28 to 33.74 [atomic%]. (C) EDX mapping of Zn atoms (ratio of Zn atoms to total atoms is 6.69 to 8.74). 24.99 [atomic%] range.) Also, Fig. 57(A) and Fig. 57( 57B) and FIG. 57C show the substrate temperature RT and oxygen gas flow rate ratio 10% during film formation. The cross section of the sample prepared in step 1 shows the same area. The more elements in the range are measured, the brighter the light becomes, and the fewer elements in the range are measured, the darker the light becomes. The ratio of elements is shown by light and dark. The magnification of the EDX mapping shown in Figure 57 is 720. Ten thousand times more.

[0437] In the EDX mapping shown in Figure 57(A), Figure 57(B), and Figure 57(C), the image The relative light and dark distribution can be seen in the figure. The substrate temperature RT and oxygen gas flow rate ratio during film formation are In the sample made at %, it can be seen that each atom exists with a certain distribution. In Fig. 57(A), Fig. 57(B), and Fig. 57(C), the areas enclosed by solid lines and the areas enclosed by dashed lines are Pay attention to the range.

[0438] In FIG. 57(A), the area enclosed by the solid line contains many relatively dark areas, and the area enclosed by the dashed line contains many relatively dark areas. In Figure 57(B), the area enclosed by the solid line contains many relatively bright areas. The area surrounded by the dashed line contains many relatively bright areas, while the area surrounded by the dashed line contains many relatively dark areas.

[0439] In other words, the area surrounded by the solid line is the area with a relatively large amount of In atoms, and the area surrounded by the dashed line is the area with a relatively large amount of In atoms. This is a region with relatively few atoms. In FIG. 57(C), the area surrounded by the solid line The right side is a relatively bright area, and the left side is a relatively dark area. The range is In X2 Zinc Y2 O Z2 , or InO X1 This is an area where the main components are:

[0440] The area surrounded by the solid line is the area with relatively few Ga atoms, and the area surrounded by the dashed line is the area with relatively few Ga atoms. In Figure 57(C), the upper left area in the area enclosed by the dashed line is The upper right area is a relatively bright area, and the lower right area is a relatively dark area. The area enclosed by the dashed line is GaO X3 , or Ga X4 Zinc Y4 O Z4 Areas where the main components are It is.

[0441] Also, from Figures 57(A), 57(B), and 57(C), the distribution of In atoms is G It is relatively more uniformly distributed than a atoms, and InO X1 The region where is the main component is In X 2Zn Y2 O Z2 It appears that the two are connected to each other through the regions where In this way, X2 Zinc Y2 O Z2 , or InO X1 The area where is the main component is It spreads and forms like a cloud.

[0442] Thus, GaO X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or In OX1 In-Ga-Zn oxide with a structure in which the regions in which The compound can be referred to as CAC-IGZO.

[0443] The crystal structure of CAC is an nc structure. In the dc diffraction patterns, bright spots originating from IGZO, including single crystal, polycrystalline, and CAAC structures, were observed. In addition to the spots, there are several bright spots. The crystal structure is defined as the appearance of a ring-shaped area of ​​high brightness in addition to the bright spots. can be.

[0444] In addition, from Fig. 57(A), Fig. 57(B), and Fig. 57(C), GaO X3 The main component is In a certain area, and In X2 Zinc Y2 O Z2 , or InO X1 The size of the region in which is the principal component The size is preferably 0.5 nm to 10 nm, or 1 nm to 3 nm. Preferably, in the EDX mapping, the diameter of the region in which each metal element is the main component is 1 nm or less. The upper limit is 2 nm.

[0445] From the above, CAC-IGZO is different from IGZO compounds in which metal elements are uniformly distributed. CAC-IGZO has a Ga structure and has different properties from IGZO compounds. O X3 The main components are In X2 Zinc Y2 O Z2 , or InO X1 is the main component The structure is a mosaic of regions where each element is the main component and regions where each element is the main component. Therefore, when CAC-IGZO is used in semiconductor devices, X3Due to The properties of In X2 Zinc Y2 O Z2 , or InO X1 The properties resulting from By using this, a high on-current (I on ), and high field-effect mobility (μ It is possible.

[0446] In addition, semiconductor elements using CAC-IGZO have high reliability. ZO is ideal for a variety of semiconductor devices, including displays.

[0447] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0448] (Embodiment 3) In this embodiment, an input device ( An example of a method for driving the touch sensor will be described.

[0449] FIG. 43A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In (A), a pulse voltage output circuit 601 and a current detection circuit 602 are shown. In (A), the electrode 621 to which the pulse is applied and the electrode 622 to which the change in the current is detected are The number of electrodes is shown as six, namely, wirings X1-X6 and wirings Y1-Y6. In addition, in FIG. 43(A), the electrode 621 and the electrode 622 overlap each other. Alternatively, the electrode 621 and the electrode 622 are arranged close to each other to form a capacitance 603. The functions of the electrodes 621 and 622 may be interchangeable.

[0450] For example, the wiring 23 illustrated in the first embodiment corresponds to one of the electrodes 621 and 622. , the wiring 24 corresponds to the other of the electrodes 621 and 622 .

[0451] The pulse voltage output circuit 601 inputs pulse voltages to the wirings X1-X6 in sequence, for example. The current detection circuit 602 detects the current flowing through each of the wirings Y1-Y6, for example. This is a circuit for detecting this.

[0452] A pulse voltage is applied to one of the wirings X1-X6 to form a capacitance 603. An electric field is generated between the electrodes 621 and 622, and a current flows through the electrode 622. Part of the electric field generated between the electrodes is generated when a detected object such as a finger or stylus approaches or comes into contact with the object. As a result, the electric field strength between the electrodes changes. The magnitude of the flow changes.

[0453] For example, when there is no proximity or contact of the object to be detected, the magnitude of the current flowing through the wires Y1-Y6 is The value of the capacitance 603 corresponds to the capacitance of the capacitor. When part of the field is blocked, the magnitude of the current flowing through the wires Y1-Y6 decreases. By utilizing this, the proximity or contact of a sensing object can be detected.

[0454] The current detection circuit 602 detects the (temporal) integral value of the current flowing through one wire. In that case, the detection may be performed using, for example, an integrating circuit. In this case, for example, the current may be converted into a voltage, and the peak value of the voltage may be detected. The value may be detected.

[0455] FIG. 43B shows input and output waves in the mutual capacitance type touch sensor shown in FIG. In FIG. 43(B), the detection of each matrix in one sensing period is shown. In FIG. 43(B), the case where the contact or proximity of the object to be detected is not detected is shown. There are two cases: when the sensor detects contact or proximity of a sensing object (when touched) and when the sensor detects contact or proximity of a sensing object (when touched). Here, the wiring Y1-Y6 is shown in the figure according to the magnitude of the detected current. The corresponding voltage waveforms are shown.

[0456] As shown in FIG. 43(B), pulse voltages are sequentially applied to the wirings X1-X6. In response, current flows through the wires Y1-Y6. In response to the change in the voltage, the same current flows through the wires Y1-Y6, so The output waveforms of each are similar. On the other hand, when touching, among the wirings Y1-Y6, The current flowing through the wiring located in contact with or close to the object to be detected is reduced, as shown in Figure 4. The output waveform changes as shown in 3(B).

[0457] In FIG. 43(B), a detection object is provided at or near the intersection of the wires X3 and Y3. 13 shows an example of a case where the objects are in contact or in close proximity to each other.

[0458] In this way, in the mutual capacitance method, the electric field generated between a pair of electrodes is shielded, resulting in a By detecting the change in the current, the position information of the object to be detected can be obtained. When the detection sensitivity is high, the object to be detected is far from the detection surface (e.g. the surface of a touch panel). However, the coordinates can also be detected.

[0459] In addition, in the case of a touch panel, the display period of the display unit and the sensing period of the touch sensor By using a driving method in which the driving time is shifted from the driving time, the detection sensitivity of the touch sensor can be increased. For example, if a display period and a sensing period are separated during one frame period, In this case, it is preferable to provide two or more sensing periods in one frame period. By increasing the frequency of sensing, the detection sensitivity can be further improved.

[0460] The pulse voltage output circuit 601 and the current detection circuit 602 are, for example, a single IC chip. It is preferable that the IC is formed in the touch panel. It is preferable that the terminal is mounted on a substrate inside the housing of an electronic device. When using a bent panel, parasitic capacitance increases at the bent parts, increasing the effect of noise. Therefore, it is recommended to use ICs that use a driving method that is less susceptible to noise. For example, a driving method that increases the signal-to-noise ratio (S / N ratio) is applied. It is preferable to use an IC having such a configuration.

[0461] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0462] (Embodiment 4) In this embodiment, the transistor 70, the transistor 70a, The transistors 70b, 201, and 202 can be substituted for these transistors. An example of a transistor that can achieve this will be described with reference to the drawings.

[0463] The touch panel module 10 according to one embodiment of the present invention includes a bottom gate transistor, It can be manufactured using various types of transistors, such as top-gate transistors. Therefore, the semiconductor layer material and transistor structure used can be adjusted to suit the existing production line. The structure can be easily replaced.

[0464] [Bottom-gate transistor] FIG. 44(A1) shows a channel protection transistor, which is a type of bottom gate transistor. 44(A1) is a cross-sectional view of a transistor 810. In FIG. The transistor 810 is formed on a substrate 771 with an insulating layer 772 formed thereon. The semiconductor layer 742 is disposed on the electrode 746 with an insulating layer 726 interposed therebetween. The electrode 746 can function as a gate electrode. The insulating layer 726 can function as a gate insulating layer. It can function as such.

[0465] In addition, an insulating layer 741 is provided over a channel formation region of the semiconductor layer 742. An electrode 744a and an electrode 744b are provided on the insulating layer 726 in contact with a part of the insulating layer 742. Electrode 744a can function as either a source electrode or a drain electrode. , which can function as the other of the source electrode or the drain electrode. A portion of the electrode 744 b is formed on the insulating layer 741 .

[0466] The insulating layer 741 can function as a channel protection layer. 1, the thickness of the semiconductor layer 742 generated when the electrodes 744a and 744b are formed can be reduced. Therefore, when the electrodes 744a and 744b are formed, the semiconductor This can prevent the channel formation region of the layer 742 from being etched. According to this method, a transistor having good electrical characteristics can be realized.

[0467] The transistor 810 has an insulating layer 744 a, an electrode 744 b, and an insulating layer 741. It has an edge layer 728 and an insulating layer 729 on top of the insulating layer 728 .

[0468] For example, the insulating layer 772 may be formed using the same material and method as the insulating layer 722 or the insulating layer 705. Note that the insulating layer 772 may be a stack of a plurality of insulating layers. For example, the semiconductor layer 742 is formed using the same material and method as the semiconductor layer 708. The semiconductor layer 742 may be a stack of a plurality of semiconductor layers. For example, electrode 746 can be formed using similar materials and methods as electrode 706. The electrode 746 may be a laminate of multiple conductive layers. The insulating layer 6 can be formed using the same material and method as the insulating layer 707. Layer 726 may be a stack of multiple insulating layers. The electrode 744b is formed using the same material and method as the electrode 714 or the electrode 715. The electrodes 744a and 744b may be laminated with a plurality of conductive layers. For example, the insulating layer 741 is formed using the same material and method as the insulating layer 726. The insulating layer 741 may be a laminate of a plurality of insulating layers. For example, the insulating layer 728 can be formed using the same materials and methods as the insulating layer 710. The insulating layer 728 may be a laminate of a plurality of insulating layers. The insulating layer 29 can be formed using the same material and method as the insulating layer 711. The edge layer 729 may be a stack of multiple insulating layers.

[0469] The electrodes, semiconductor layers, insulating layers, and the like constituting the transistor disclosed in this embodiment are the same as those of other It can be formed using the materials and methods disclosed in the embodiment.

[0470] When an oxide semiconductor is used for the semiconductor layer 742, the electrode 724a and the electrode 724b are At least in the portion in contact with the semiconductor layer 742, oxygen is taken from a portion of the semiconductor layer 742, and oxygen deficiency is formed. It is preferable to use a material capable of generating oxygen vacancies in the semiconductor layer 742. The carrier concentration in the region where this occurs increases, the region becomes n-type, and the n-type region (n + layer) Therefore, the region can function as a source region or a drain region. When an oxide semiconductor is used for the semiconductor layer 742, oxygen is taken from the semiconductor layer 742, and oxygen vacancies occur. Examples of materials capable of generating this include tungsten and titanium. Cut.

[0471] The source and drain regions are formed in the semiconductor layer 742, whereby the electrode 724 a and the contact resistance between the electrode 724b and the semiconductor layer 742 can be reduced. To improve the electrical characteristics of transistors, such as field effect mobility and threshold voltage. can be done.

[0472] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 724 a and between the semiconductor layer 742 and the electrode 724b, It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. , can function as a source or drain region of a transistor.

[0473] The insulating layer 729 has a function of preventing or reducing the diffusion of impurities from the outside into the transistor. It is preferable to form the insulating layer 729 using a material having the above-mentioned properties. It can also be omitted.

[0474] Note that in the case where an oxide semiconductor is used for the semiconductor layer 742, the insulating layer 729 is formed before or after the insulating layer 729 is formed. Heat treatment may be performed after the formation of the insulating layer 729 or before or after the formation of the insulating layer 729. The oxygen contained in the insulating layer 729 or other insulating layers is diffused into the semiconductor layer 742, The oxygen vacancies in the insulating layer 742 can be filled. Alternatively, the insulating layer 729 can be formed while being heated. This makes it possible to compensate for oxygen vacancies in the semiconductor layer 742.

[0475] Generally, the CVD method is a plasma CVD (PECVD) method that uses plasma. sma Enhanced CVD method, Thermal CVD (TCVD) They can be further classified into metal CVD (MCV) and other methods depending on the source gas used. D: Metal CVD) method, metal organic CVD (MOCVD) method c CVD) method.

[0476] Generally, the deposition method includes resistance heating deposition, electron beam deposition, MBE (Molecular Beam Evaporation), and r Beam Epitaxy) method, PLD (Pulsed Laser Deposit) tion) method, IBAD (Ion Beam Assisted Deposition) ) method, ALD (Atomic Layer Deposition) method, etc. .

[0477] The plasma CVD method can produce high-quality films at relatively low temperatures. When using a deposition method that does not use plasma, such as the plasma deposition method, damage occurs to the deposition surface. This makes it possible to obtain a film with fewer defects.

[0478] Generally, the sputtering method is classified into DC sputtering method, magnetron sputtering method, sputtering method, RF sputtering method, ion beam sputtering method, ECR (Electron Cycling) on Cyclotron Resonance) sputtering method, facing targets It can be classified into methods such as sputtering.

[0479] In the facing target sputtering method, the plasma is confined between the targets. This reduces the plasma damage to the substrate. Since the incident angle of the sputtered particles to the substrate can be made shallow, the step coverage is improved. It can be improved.

[0480] The transistor 811 shown in FIG. 44A2 has a back gate electrode over the insulating layer 729. The transistor 810 differs from the transistor 810 in that it has an electrode 723 that can function as a It may be made of similar materials and methods as pole 746 .

[0481] In general, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the gate electrode. The back gate electrode can be made to function in the same manner as the gate electrode. Alternatively, the potential may be a ground potential (GND potential) or an arbitrary potential. By changing the potential of the gate electrode independently of the potential of the gate electrode, the transistor can be The threshold voltage can be varied.

[0482] Both the electrode 746 and the electrode 723 can function as a gate electrode. Thus, the insulating layer 726, the insulating layer 728, and the insulating layer 729 each serve as a gate insulating layer. The electrode 723 can function as a dielectric layer. It is okay.

[0483] When one of the electrodes 746 and 723 is referred to as a "gate electrode," the other is referred to as a "transistor." For example, in the transistor 811, the electrode 723 is called a "gate electrode." When referring to the back gate electrode, the electrode 746 is referred to as the "back gate electrode." When the transistor 811 is used as a "top electrode," the transistor 811 is a top-gate type transistor. In addition, either the electrode 746 or the electrode 723 can be considered as a type of The first gate electrode is sometimes referred to as the "first gate electrode" and the other as the "second gate electrode."

[0484] By providing the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, By setting the potentials of the electrodes 46 and 723 at the same potential, carriers flow in the semiconductor layer 742. The area becomes larger in the film thickness direction, so the amount of carrier movement increases. As the on-state current of the transistor 811 increases, the field-effect mobility increases.

[0485] Therefore, the transistor 811 is a transistor having a large on-current relative to its area. That is, the area occupied by the transistor 811 is According to one embodiment of the present invention, the area occupied by a transistor can be reduced. Therefore, according to one embodiment of the present invention, a highly integrated semiconductor device can be realized. It is possible.

[0486] In addition, since the gate electrode and the back gate electrode are formed of a conductive layer, the outside of the transistor The function of preventing the electric field generated by the electrostatic discharge from acting on the semiconductor layer in which the channel is formed (especially the electrostatic discharge The back gate electrode is larger than the semiconductor layer. By forming the semiconductor layer in a thin layer and covering it with a back gate electrode, the electric field shielding function can be improved. do.

[0487] In addition, the electrodes 746 and 723 each have a function of blocking an electric field from the outside. Therefore, the electric charges of the charged particles generated on the insulating layer 772 side or above the electrode 723 are transferred to the semiconductor layer This does not affect the channel formation region of the MOSFET. As a result, stress tests (e.g., applying a load to the gate) -GBT (Gate Bias-Temperature) stress test In addition, the on-current starts to flow depending on the magnitude of the drain voltage. This can reduce the phenomenon that the gate voltage (start voltage) changes. The effect occurs when the electrodes 746 and 723 are at the same potential or at different potentials. .

[0488] The BT stress test is a type of accelerated test that detects the transitions that occur during long-term use. It is possible to evaluate the characteristic changes (aging) of transistors in a short time. The amount of change in the threshold voltage of a transistor before and after testing is an important indicator for investigating reliability. The smaller the threshold voltage fluctuation, the more reliable the transistor. do.

[0489] In addition, the electrodes 746 and 723 are provided, and the electrodes 746 and 723 are set to the same potential. By doing so, the amount of variation in the threshold voltage is reduced. At the same time, the variation in electrical characteristics is reduced.

[0490] In addition, a transistor with a back gate electrode has a positive charge applied to the gate +GB The change in threshold voltage before and after the T stress test was also Smaller than Zysta.

[0491] In addition, by forming the back gate electrode with a conductive film having a light shielding property, This prevents light from entering the semiconductor layer from the electrode side. This prevents degradation of electrical characteristics such as a shift in the threshold voltage of a transistor. do.

[0492] According to one embodiment of the present invention, a highly reliable transistor can be provided. As a result, a highly reliable semiconductor device can be realized.

[0493] FIG. 44(B1) shows a channel-protection transistor, which is one of the bottom-gate transistors. 8 shows a cross-sectional view of transistor 820. Transistor 820 is similar to transistor 810. 7, except that an insulating layer 741 covers the edge of a semiconductor layer 742. In addition, a part of the insulating layer 741 overlapping the semiconductor layer 742 is selectively removed to form an opening. In the semiconductor layer 742, the semiconductor layer 742 and the electrode 744a are electrically connected to each other. In another opening formed by selectively removing a part of the insulating layer 741 overlapping the semiconductor layer The insulating layer 741 overlaps the channel forming region and the electrode 744b. This region can function as a channel protection layer.

[0494] The transistor 821 shown in FIG. 44B2 has a backgate electrode over the insulating layer 729. The transistor 820 differs from the transistor 820 in that it has an electrode 723 that can function as a transistor.

[0495] By providing the insulating layer 729, the semiconductor generated during the formation of the electrodes 744a and 744b can be prevented. Therefore, the formation of the electrodes 744a and 744b can be prevented. In some cases, thinning of the semiconductor layer 742 can be prevented.

[0496] In addition, the transistors 820 and 821 are the same as the transistors 810 and The distance between the electrodes 744a and 746 and the distance between the electrodes 744b and 746 are smaller than that of the transistor 811. The distance between the electrodes 744a and 746 is increased. In addition, the parasitic capacitance between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with good electrical characteristics can be realized. can.

[0497] The transistor 825 shown in FIG. 44(C1) is a bottom-gate transistor. The transistor 825 is a channel etched transistor. The electrodes 744a and 744b are formed without using any of the above. A part of the semiconductor layer 742 that is exposed when the electrode 744b is formed may be etched. On the other hand, since the insulating layer 729 is not provided, productivity of the transistor can be increased.

[0498] A transistor 826 shown in FIG. 44C2 has a back gate electrode over an insulating layer 729. The transistor 724 differs from the transistor 825 in that it has an electrode 723 that can function as a transistor.

[0499] [Top-gate transistor] FIG. 45A1 shows a transistor 830, which is a type of top-gate transistor. Transistor 830 includes a semiconductor layer 742 over an insulating layer 772. An electrode 744 a in contact with a part of the semiconductor layer 742 and an insulating layer 772 are provided on the semiconductor layer 742 and the insulating layer 772. and an electrode 744b in contact with a part of the semiconductor layer 742. An insulating layer 726 is provided over the electrode 744 b , and an electrode 746 is provided over the insulating layer 726 .

[0500] The transistor 830 is connected to the electrodes 746 and 744a, and the electrodes 746 and Since the electrodes 746 and 744b do not overlap, the parasitic capacitance between the electrodes 746 and 744a, In addition, the parasitic capacitance occurring between the electrode 746 and the electrode 744b can be reduced. After the electrode 746 is formed, the electrode 746 is used as a mask to introduce impurities 755 into the semiconductor. By introducing the ions into the semiconductor layer 742, the ions are self-aligned in the semiconductor layer 742. An impurity region can be formed (see FIG. 45(A3)). According to one embodiment of the present invention, A transistor with good electrical characteristics can be realized.

[0501] The impurity 755 is introduced by an ion implantation device, an ion doping device, or a plasma This can be done using a processing device.

[0502] The impurities 755 are, for example, at least one of Group 13 elements or Group 15 elements. When an oxide semiconductor is used for the semiconductor layer 742, one type of element can be used. contains at least one of the following elements as impurities 755: rare gases, hydrogen, and nitrogen. It is also possible to use

[0503] The transistor 831 shown in FIG. 45A2 has an electrode 723 and an insulating layer 727. The transistor 831 is formed on an insulating layer 772. The electrode 723 has an insulating layer 727 formed thereon. The electrode 723 has The insulating layer 727 can function as a back gate electrode. The insulating layer 727 can function as a conductor. It can be formed more.

[0504] Like transistor 811, transistor 831 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 831 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0505] The transistor 840 illustrated in FIG. 45B1 is a top-gate transistor. The transistor 840 is a semiconductor device after forming the electrodes 744a and 744b. The transistor 830 differs from the transistor 830 in that a dielectric layer 742 is formed. The transistor 841 has an electrode 723 and an insulating layer 727. In the transistor 840 and the transistor 841, the semiconductor layer 74 A portion of the semiconductor layer 742 is formed on the electrode 744a, and another portion of the semiconductor layer 742 is formed on the electrode 744b. It is done.

[0506] Like transistor 811, transistor 841 has a large on-state current relative to its area. In other words, for the required on-current, According to one embodiment of the present invention, the area occupied by the transistor 841 can be reduced. Therefore, according to one aspect of the present invention, a highly integrated semiconductor device can be manufactured. A conductor device can be realized.

[0507] The transistor 842 illustrated in FIG. 46A1 is a top-gate transistor. The transistor 842 is formed by forming an insulating layer 729, and then The transistor 830 and the transistor 840 are different in that the electrode 744 is formed. a and the electrode 744b are semi-insulated in the openings formed in the insulating layer 728 and the insulating layer 729. It is electrically connected to the conductor layer 742 .

[0508] In addition, a portion of the insulating layer 726 that does not overlap the electrode 746 is removed, and the electrode 746 and the remaining insulating layer 726 are separated. The layer 726 is used as a mask to introduce impurities 755 into the semiconductor layer 742, thereby forming a semiconductor A self-aligned impurity region can be formed in layer 742 ( In the transistor 842, the insulating layer 726 does not extend beyond the edge of the electrode 746. When the impurity 755 is introduced into the semiconductor layer 742, the semiconductor layer 74 The impurity concentration in the region where the impurity 755 is introduced through the insulating layer 726 of 2 is The region in the semiconductor layer 742 is smaller than the region in which the impurity 755 is introduced without passing through the semiconductor layer 742. The area adjacent to the part overlapping with the electrode 746 is doped with LDD (Lightly Doped Diode). A rain area is formed.

[0509] The transistor 843 shown in FIG. 46A2 has an electrode 723. 42. The transistor 843 has an electrode 723 formed on a substrate 771. The electrode 723 overlaps with the semiconductor layer 742 with an insulating layer 772 interposed therebetween. It can function.

[0510] In addition, the transistor 844 shown in FIG. 46(B1) and the transistor As in the case of the stadium 845, the insulating layer 726 in the area not overlapping with the electrode 746 may be entirely removed. In addition, the transistor 846 shown in FIG. 46(C1) and the transistor 847 shown in FIG. The insulating layer 726 may remain, as may the stadium 847.

[0511] After forming the electrode 746, the transistors 842 to 847 are also formed with the electrode 74. 6 as a mask, impurities 755 are introduced into the semiconductor layer 742, forming a semiconductor layer 74 According to one aspect of the present invention, an impurity region can be formed in a self-aligned manner in the electric According to one embodiment of the present invention, a transistor having good characteristics can be realized. A highly integrated semiconductor device can be realized.

[0512] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0513] (Embodiment 5) In this embodiment, a touch panel including a touch panel according to one embodiment of the present invention and an IC is provided. An example of the configuration of the module will be described with reference to the drawings.

[0514] FIG. 47 shows a block diagram of the touch panel module 6500. The controller 6500 includes a touch panel 6510 and an IC 6520.

[0515] The touch panel 6510 includes a display unit 6511, an input unit 6512, and a scanning line driver circuit 65 The display portion 6511 has a plurality of pixels, a plurality of signal lines, and a plurality of scanning lines. The input unit 6512 has a function of displaying an image. It has multiple sensor elements that detect touch or proximity and functions as a touch sensor. The scanning line driver circuit 6513 has a function of outputting a scanning signal to the scanning lines of the display portion 6511. Possesses the ability.

[0516] For ease of explanation, the touch panel 6510 is configured as a display unit 6511. The input unit 6512 is shown separately, but it has a function of displaying an image and a function of acting as a touch sensor. It is preferable to use a so-called in-cell type touch panel having both functions. .

[0517] As a touch sensor type that can be used as the input unit 6512, for example, a capacitive Capacitive touch panels can be used. Surface capacitive touch panels and projected capacitive touch panels can be used. The projected capacitive touch sensor is classified into self-capacitance and mutual-capacitance types. The mutual capacitance method is preferable because it enables simultaneous multi-point detection.

[0518] However, the present invention is not limited to this, and may be adapted to detect the proximity or contact of a detection target such as a finger or stylus. Various types of sensors that can be used for the input unit 6512 can also be applied. For example, In addition to the capacitive type, there are also resistive film, surface acoustic wave, infrared, and optical types. Various methods can be used, including the academic method.

[0519] Representative in-cell touch panels are the semi-in-cell type and the full-in-cell type. The semi-in-cell type has both the substrate that supports the display element and the opposing substrate, or The full-in-cell type refers to a structure in which electrodes and the like that constitute a touch sensor are provided on the surface of the display. This refers to a configuration in which electrodes constituting a touch sensor are provided on a substrate supporting a display element. By using a cancellation type touch panel, the structure of the counter substrate can be simplified, which is preferable. In addition, the electrodes constituting the display element also serve as the electrodes constituting the touch sensor. This structure is preferable because it simplifies the manufacturing process and reduces manufacturing costs.

[0520] The display unit 6511 supports HD (1280 x 720 pixels) and FHD (1920 x 10 80), WQHD (pixel count 2560 x 1440), WQXGA (pixel count 2560 x 160 0), 4K (3840 x 2160 pixels), 8K (7680 x 4320 pixels) It is preferable to have a very high resolution, especially 4K, 8K or higher. In addition, the pixel density (resolution) of the pixels provided in the display portion 6511 is preferably 100%. However, it is 300 ppi or more, preferably 500 ppi or more, and more preferably 800 ppi or more. , more preferably 1000ppi or more, and more preferably 1200ppi or more. This is preferable. The display unit 6511 having high resolution and high definition allows For personal use such as home use or for large-scale projects, it is important to enhance the sense of realism and depth. This makes it possible.

[0521] The IC 6520 includes a circuit unit 6501, a signal line driver circuit 6502, and a sensor driver circuit 6 The circuit unit 6501 includes a timing controller 6503 and a detection circuit 6504. The image processing circuit 6505 includes an image processing circuit 6506.

[0522] The signal line driver circuit 6502 outputs an analog image signal to a signal line of the display portion 6511. The signal line driver circuit 6502 has a function of outputting an image signal (also called a video signal). Alternatively, the shift register circuit and the buffer circuit may be combined. The touch panel 6510 may also have a demultiplexer circuit connected to the signal lines. good.

[0523] The sensor driving circuit 6503 outputs a signal for driving the sensor element of the input unit 6512. The sensor driver circuit 6503 has a function of, for example, a shift register circuit and a buffer circuit. A combination of the first and second circuits can be used.

[0524] The detection circuit 6504 receives an output signal from a sensor element of the input section 6512 and outputs it to a circuit unit. For example, the detection circuit 6504 may include an amplifier circuit and an analog Log-to-digital conversion circuit (ADC: Analog-Digital Converter) In this case, the detection circuit 6504 can receive the signal from the input unit 6512. The output analog signal is converted into a digital signal and output to the circuit unit 6501 .

[0525] The image processing circuit 6506 of the circuit unit 6501 controls the display of the touch panel 6510. A function of generating and outputting a signal to drive the input unit 6511 and a function of generating and outputting a signal to drive the input unit 6512. The function of generating and outputting the signal output from the input unit 6512 is to analyze the signal. It has the function of outputting 0.

[0526] As a more specific example, the image processing circuit 6506 performs the following in accordance with an instruction from the CPU 6540: The image processing circuit 6506 has a function of generating a video signal. The video signal is then processed according to the user's needs, converted into an analog video signal, and sent to the signal line driver circuit 6. The image processing circuit 6506 also has a function of supplying the image data to the CPU 6540. In response to a command, the sensor driver circuit 6503 generates a drive signal. The image processing circuit 6506 analyzes the signal input from the detection circuit 6504 and outputs it as position information. and outputting the signal to the CPU 6540.

[0527] The timing controller 6505 also receives the video signal processed by the image processing circuit 6506. Based on a sync signal included in the signal, the scanning line driver circuit 6513 and the sensor driver circuit 6503 A function that generates and outputs signals (clock signals, start pulse signals, etc.) The timing controller 6505 also detects when the detection circuit 6504 outputs a signal. The timing control unit 10 may have a function of generating and outputting a signal that specifies the timing. The scanning controller 6505 controls the signals to be output to the scanning line driver circuit 6513 and the sensor driver circuit 6514. It is preferable to output a signal synchronized with the signal output to the line 6502. The period during which the pixel data of the display unit 6511 is rewritten and the period during which the pixel data of the input unit 6512 is sensed are also included. For example, it is preferable to divide one frame period into two periods for storing pixel data. The touch panel 6510 is driven by dividing the period into a rewriting period and a sensing period. In addition, for example, by providing two or more sensing periods in one frame period, The detection sensitivity and detection accuracy can be improved.

[0528] The image processing circuit 6506 can have a configuration including a processor, for example. For example, DSP (Digital Signal Processor), GPU (Gra The microprocessor can be used. These microprocessors can also be implemented as FPGAs (Field Programmable Gate Arrays). Gate Array) and FPAA (Field Programmable A PLDs (Programmable Logic Devices) such as analog arrays The configuration may be realized by various programs by the processor. By interpreting and executing these commands, it performs various data processing and program control. The program that can be executed by the processor may be stored in a memory area of ​​the processor. Alternatively, it may be stored in a separately provided storage device.

[0529] In addition, the display unit 6511, the scanning line driver circuit 6513, and the I The circuit unit 6501, the signal line driver circuit 6502, and the sensor driver circuit 6 503, a detection circuit 6504, or an external CPU 6540, etc. By using an oxide semiconductor in the region, a transistor with extremely low off-state current can be used. Since the off-state current of the transistor is extremely low, As a switch to hold the charge (data) that has flowed into the capacitive element that functions as an element By using this feature, data retention can be ensured for a long period of time. By using this in the registers and cache memory of the image processing circuit 6506, Operates the image processing circuit 6506, and in other cases saves the information of the immediately preceding process in the storage element. This enables normally-off computing, and the touch panel module This makes it possible to reduce the power consumption of the module 6500 and the electronic device in which it is implemented.

[0530] In this example, the circuit unit 6501 is a timing controller 6505 and an image processing circuit. The image processing circuit 6506 itself or the image processing circuit 65 A circuit having some of the functions of IC6520 may be provided outside the IC6520. The functions of the logic circuit 6506 or a part of the functions may be performed by the CPU 6540. The unit 6501 includes a signal line driver circuit 6502, a sensor driver circuit 6503, and a detection circuit 650 4, and a timing controller 6505.

[0531] In this example, the IC 6520 includes the circuit unit 6501. The IC6520 can be configured so that the IC6501 is not included in the IC6520. The signal line driver circuit 6502, the sensor driver circuit 6503, and the detection circuit 6504 are included. For example, when multiple ICs are mounted on the touch panel module 6500, In this case, a circuit unit 6501 is separately provided, and an IC 652 that does not have a circuit unit 6501 is provided. A plurality of 0 can be arranged, or a circuit having only IC 6520 and signal line driver circuit 6502 can be arranged. It is also possible to combine and arrange ICs that are

[0532] In this way, the touch panel 6510 has a function of driving the display unit 6511 and an input unit 651 By incorporating the function to drive 2 into a single IC, This reduces the number of ICs mounted on the module 6500, which reduces costs. Cut.

[0533] Figure 48 (A), (B), and (C) show touch panel modules 6 equipped with IC6520. 500 is a schematic diagram.

[0534] In FIG. 48A, a touch panel module 6500 includes a substrate 6531 and an opposing substrate 65 32, a plurality of FPCs 6533, ICs 6520, ICs 6530, etc. Also, a substrate 653 A display section 6511, an input section 6512, and a scanning line driver circuit 6513 are disposed between the substrate 651 and the opposing substrate 6532. The IC6520 and IC6530 have a COG (Chip On Glass) The semiconductor device is mounted on a substrate 6531 by a mounting method such as a mounting assembling method.

[0535] The IC6530 is the same as the IC6520 described above except that only the signal line driver circuit 6502 is included. is an IC having a signal line driver circuit 6502 and a circuit unit 6501. Signals are supplied to IC6530 from the outside via FPC6533. Signals can be output from IC6520 and IC6530 to the outside via 533.

[0536] In FIG. 48A, two scanning line driver circuits 6513 are provided so as to sandwich a display portion 6511. The figure also shows an example of a configuration that includes IC6530 in addition to IC6520. Such a configuration is suitable for use when the display unit 6511 has an extremely high resolution. can be done.

[0537] Figure 48(B) shows an example where one IC6520 and one FPC6533 are mounted. In this way, by consolidating the functions into one IC6520, the number of parts can be reduced. In FIG. 48B, the scanning line driver circuit 6513 is connected to the display portion 651. This shows an example of placement along the side of the two short sides of 1 that is closer to FPC6533.

[0538] FIG. 48(C) shows a PCB (Printed Circuit) on which the image processing circuit 6506 and other components are mounted. The figure shows an example of a configuration having an I / O circuit board 6534. C6520, IC6530, and PCB6534 are electrically connected by FPC6533. Here, the IC 6520 does not have the image processing circuit 6506 described above. The composition can be applied.

[0539] In each diagram of FIG. 48, IC6520 and IC6530 are mounted on F6531 instead of board 6531. It may be mounted on PC6533. For example, IC6520 or IC6530 may be mounted on COF(C hip on film method and TAB (Tape Automated Bonding g) method or similar to mount it on FPC6533.

[0540] As shown in FIG. 48(A) and (B), the FPC 6533 and IC The configuration in which IC6520 (and IC6530) etc. are arranged allows for a narrow frame, so for example It can be suitably used in electronic devices such as smartphones, mobile phones, and tablet terminals. In addition, the configuration using PCB6534 as shown in FIG. 48(C) can be used in, for example, a television Application devices, monitor devices, tablet terminals, notebook personal computers, etc. It can be suitably used for the following:

[0541] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0542] (Embodiment 6) In this embodiment, a display module including a display device or a display system according to one embodiment of the present invention will be described. The module and electronic device will be described with reference to FIGS. 49 to 54.

[0543] The display module 8000 shown in FIG. 49 includes an upper cover 8001 and a lower cover 8002. Between them, the touch panel 8004 connected to the FPC 8003, the frame 8009, and the printer It has a substrate 8010 and a battery 8011.

[0544] A display panel, a touch panel, or a touch panel module according to an embodiment of the present invention is, for example, For example, it can be used for the touch panel 8004.

[0545] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the touch panel 8004. The shape and dimensions can be changed appropriately.

[0546] The touch panel 8004 is a resistive or capacitive touch panel. In addition, the opposing substrate (sealing substrate) of the touch panel 8004 can be used by overlapping it with the It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel of the display 4 to make it into an optical touch panel.

[0547] In addition, when a transmissive or semi-transmissive liquid crystal element is used, the backlight is turned on as shown in FIG. A backlight 8007 may be provided. The backlight 8007 includes a light source 8008. In FIG. 49, a light source 8008 is disposed above a backlight 8007. For example, a light source 8008 is disposed at an end of a backlight 8007. In addition, a light diffusing plate may be used. When using optical elements or a reflective panel, the backlight 8007 is used. It is also possible to adopt a configuration in which this is not provided.

[0548] The frame 8009 protects the display panel 8006 and also supports the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the frame. The frame 8009 may also function as a heat sink.

[0549] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0550] In addition, the touch panel 8004 includes additional components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as such.

[0551] Display panel, light-emitting panel, sensor panel, touch panel, and touch panel according to one embodiment of the present invention Using a module, input device, display device, or input / output device, electronic equipment or lighting equipment A curved surface can be manufactured by using the input device, the display device, or the input / output device of one embodiment of the present invention. In addition, the input device according to one embodiment of the present invention can be manufactured with high reliability. By using the display device or input / output device, flexible and highly reliable electronic devices and lighting devices can be provided. In addition, a touch sensor can be manufactured using the input device or the input / output device of one embodiment of the present invention. It is possible to manufacture electronic devices and lighting devices with improved sensor detection sensitivity.

[0552] Examples of electronic devices include television sets (also known as televisions or television receivers). (hereinafter referred to as "computer monitors"), digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples of the device include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0553] In addition, when the electronic device or lighting device of one embodiment of the present invention is flexible, it can be used in a house or a building. It can also be installed along the curved surfaces of walls or exterior walls, or the interior or exterior of a car. be.

[0554] Further, the electronic device of one embodiment of the present invention may include a secondary battery and may perform non-contact power transmission. It is preferable that the secondary battery can be charged using the same.

[0555] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, lithium-ion batteries, nickel-metal hydride batteries battery, nickel-cadmium battery, organic radical battery, lead acid battery, secondary air battery, nickel-zinc battery, silver-zinc battery Examples include lead batteries.

[0556] The electronic device according to one embodiment of the present invention may include an antenna. By using the battery, it is possible to display images, information, etc. on the display unit. , the antenna may be used for contactless power transfer.

[0557] 50(A) to 50(H) and 51(A) and (B) are diagrams showing electronic devices. These electronic devices are made up of a housing 5000, a display unit 5001, a speaker 5003, an LED light, 5004, operation keys 5005 (including a power switch or an operation switch), and a connection terminal. 5006, Sensor 5007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions for measuring volume, humidity, gradient, vibration, odor, or infrared rays), microphone 5008, etc.

[0558] FIG. 50(A) shows a mobile computer, which in addition to the above includes a switch 5009 , infrared port 5010, etc.

[0559] FIG. 50(B) shows a portable image reproducing device (for example, a DVD reproducing device) equipped with a recording medium. In addition to the above, it has a second display unit 5002, a recording medium reading unit 5011, etc. It is possible.

[0560] FIG. 50(C) shows a television device, which includes a stand 5012 and other components in addition to those described above. The television device can be operated by using an operation switch provided in the housing 5000. This can be done by a separate remote control device 5013. The channel and volume can be controlled by the operation keys provided on the display unit 5001. The image displayed on the remote control unit 5013 can be operated. A display unit for displaying information output from the controller 5013 may be provided.

[0561] FIG. 50(D) shows a portable game machine, which, in addition to the above, includes a recording medium reading unit 5011, etc.

[0562] FIG. 50(E) shows a digital camera with a television receiving function. In addition to the above, It may have a taper 5014, a shutter button 5015, an image receiving unit 5016, etc.

[0563] FIG. 50(F) shows a portable gaming machine, which, in addition to the above, has a second display unit 5002, a recorder It may have a medium reading unit 5011, etc.

[0564] FIG. 50(G) shows a portable television receiver, which, in addition to the above, has a function for transmitting and receiving signals. 5017, etc.

[0565] FIG. 50(H) shows a wristwatch-type information terminal, which, in addition to the above, includes a band 5018, a clasp, The housing 5000, which also serves as a bezel, may have a clasp 5019, etc. The display unit 5001 has a non-rectangular display area. icon 5020, other icons 5021, etc. can be displayed.

[0566] Figure 51(A) shows a digital signage. Figure 51(B) shows a digital signage attached to a cylindrical pillar.

[0567] The electronic devices shown in FIGS. 50(A) to 50(H) and 51(A) and (B) are For example, various information (still images, videos, text images, etc.) can be displayed. Functions for displaying information on the display unit, touch panel functions, calendars, dates, or times, etc. function, function to control processing by various software (programs), wireless communication function, The ability to connect to various computer networks using wired communication functions, and wireless communication functions A function to transmit or receive various data via a computer, a program recorded on a recording medium, or The data can be read out and displayed on the display unit. In electronic devices having displays, one display is used primarily to display image information, and another A function that mainly displays text information on one display unit, or a function that displays images with parallax taken into account on multiple displays By displaying the image, it is possible to have a function of displaying a three-dimensional image. In electronic devices having an image unit, the functions of taking still images, taking videos, and taking pictures are available. The function to automatically or manually correct the captured image, and to store the captured image on a recording medium (external or internal to the camera) The image capturing device may have a function of storing the captured image in a memory (such as a memory), a function of displaying the captured image on a display unit, etc. Note that the electronic devices shown in FIGS. 50(A) to 50(H) and 51(A) and (B) have The functions that can be implemented are not limited to these, and various other functions can be implemented.

[0568] 52(A), (B), (C1), (C2), (D), and (E) show a curved display unit 70. 7 shows an example of an electronic device having the display unit 7000. The display surface of the display unit 7000 is curved. The display can be performed along the curved display surface. The display unit 7000 has flexibility. It may be possible.

[0569] The display unit 7000 may be a display panel, a light-emitting panel, a sensor panel, a touch panel, or the like, according to one embodiment of the present invention. The display device is a panel, a display device, an input / output device, or the like. It is possible to provide an electronic device that has a curved display portion and is highly reliable.

[0570] An example of a mobile phone is shown in FIG. 52A. A mobile phone 7100 includes a housing 7101, a display 7000, operation button 7103, external connection port 7104, speaker 7105, microphone 7106 etc.

[0571] A mobile phone 7100 shown in FIG. 52A includes a touch sensor in a display portion 7000. The touch sensor 7100 shown in FIG. All operations such as making a phone call or entering text can be done with a finger or a stylus. This can be done by touching part 7000.

[0572] In addition, the operation button 7103 can be used to turn the power on and off, and to display the display unit 7000. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0573] FIG. 52B shows an example of a television device. A television device 7200 includes a housing 7 A display unit 7000 is built into the housing 201. This shows the configuration that supported 201.

[0574] The television device 7200 shown in FIG. 52B is operated using an operation switch provided in the housing 7201. This can be done by a separate remote control 7211 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7211 may display information to be output from the remote control unit 7211. The remote control 7211 may have an operation key or a touch panel. The panel allows the user to operate the channel and volume, and the display unit 7000 displays You can manipulate the video.

[0575] The television device 7200 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts by wired or wireless connection via a modem. By connecting to a communication network, one-way (sender to receiver) or two-way It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0576] Examples of portable information terminals are shown in Fig. 52 (C1), (C2), (D), and (E). The terminal has a housing 7301 and a display unit 7000. The display unit 7000 may include a display, a speaker, a microphone, an antenna, a battery, etc. The mobile information terminal is operated by touching the display unit 700 with a finger or a stylus. This can be done by touching 0.

[0577] FIG. 52(C1) is a perspective view of a portable information terminal 7300, and FIG. 52(C2) is a perspective view of a portable information terminal 7300. 52(D) is a perspective view of a mobile information terminal 7310. FIG. FIG. 52E is a perspective view of the portable information terminal 7320.

[0578] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, the device can be used as a smartphone. The portable information terminal exemplified in this embodiment may be, for example, a mobile phone, an electronic mail, or the like. It can be used for a variety of purposes, including browsing and writing documents, playing music, communicating on the Internet, and playing computer games. Various applications can be executed.

[0579] The mobile information terminal 7300, the mobile information terminal 7310, and the mobile information terminal 7320 are Image information can be displayed on multiple surfaces. For example, the image shown in Fig. 52(C1) and (D) As shown in FIG. 7, three operation buttons 7302 are displayed on one side, and information 7303 shown as a rectangle is displayed on the other side. In Fig. 52(C1) and (C2), information is displayed on the top of the mobile information terminal. FIG. 52(D) shows an example in which information is displayed on the side of the mobile information terminal. Also, information may be displayed on three or more sides of a mobile information terminal. In FIG. 52(E), information 7 304, information 7305, and information 7306 are displayed on different surfaces.

[0580] An example of such information is notifications from social networking services (SNS). , display notifying you of incoming e-mails or telephone calls, subject of e-mails or sender name , date and time, time, battery level, antenna reception strength, etc. Or, the information is displayed Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0581] For example, the user of the portable information terminal 7300 may carry the portable information terminal 7300 in a breast pocket of a garment. When the item is stored, the display (information 7303 in this example) can be confirmed.

[0582] Specifically, the telephone number or name of the caller of the incoming call is recorded on the mobile information terminal 7300. The display is placed in a position that can be observed from above. The user takes the mobile information terminal 7300 out of his / her pocket. You can check the display and decide whether or not to answer the call without having to take out your phone.

[0583] 52(F) to (H) show an example of an illumination device having a curved light-emitting portion.

[0584] The light-emitting portion of each of the lighting devices shown in FIGS. 52(F) to (H) is a display panel according to one embodiment of the present invention. using a display device, a light-emitting panel, a sensor panel, a touch panel, a display device, an input / output device, etc. According to one aspect of the present invention, a lighting device having a curved light-emitting portion and high reliability is manufactured. can be provided.

[0585] The lighting device 7400 shown in FIG. 52(F) includes a light-emitting unit 7402 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0586] The light-emitting portion 7412 of the lighting device 7410 shown in FIG. 52(G) has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate in all directions.

[0587] The lighting device 7420 shown in FIG. 52(H) has a light-emitting portion 7422 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7422 is focused on the front surface of the lighting device 7420. This type of lighting is suitable for illuminating a certain area. This has the effect of making it difficult to

[0588] In addition, the lighting devices 7400, 7410, and 7420 each have light-emitting The light emitting part may be flexible. The light emitting part may be fixed by a member such as a plastic member or a movable frame. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0589] The lighting device 7400, the lighting device 7410, and the lighting device 7420 each have an operation switch. The light emitting device has a base 7401 having a switch 7403 and a light emitting unit supported by the base 7401 .

[0590] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing may be fixed to the ceiling or hung from the ceiling. The light surface can be curved, so a specific area can be brightened by curving the light-emitting surface in a concave shape. The light can be curved convexly to illuminate an entire room.

[0591] 53(A1), (A2), (B) to (I) show a display device having a flexible display unit 7001. 1 shows an example of a portable information terminal.

[0592] The display unit 7001 may be a display panel, a light-emitting panel, a sensor panel, or a touch panel according to one embodiment of the present invention. It is manufactured using a panel, display device, input / output device, etc. For example, the radius of curvature is 0.01 Display devices or input / output devices that can be bent to within 150 mm or more can be used. The display unit 7001 may be provided with a touch sensor, and the display unit 7001 may be touched by a finger or the like. The mobile information terminal can be operated by touching it. It is possible to provide a highly reliable electronic device having a display unit that displays the image.

[0593] FIG. 53(A1) is a perspective view showing an example of a portable information terminal, and FIG. 53(A2) is a perspective view showing an example of a portable information terminal. A side view showing an example of an information terminal. The mobile information terminal 7500 includes a housing 7501, a display unit 7 001, a drawer member 7502, an operation button 7503, etc.

[0594] The portable information terminal 7500 has a flexible display unit wound in a roll shape in a housing 7501. It has 7001.

[0595] In addition, the portable information terminal 7500 can receive video signals using a built-in control unit. The image can be displayed on the display unit 7001. The battery is built in. Also, the housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be directly supplied from the outside via wires.

[0596] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. In addition, in Fig. 53 (A1), (A2), and (B), a mobile information terminal In the example shown, the operation buttons 7503 are arranged on the side of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface of the terminal 7500, or on the back surface.

[0597] FIG. 53B shows a mobile phone with the display unit 7001 pulled out by a pull-out member 7502. 7 shows a portable information terminal 7500. In this state, an image can be displayed on the display unit 7001. In addition, the state of FIG. 53(A1) in which a part of the display unit 7001 is rolled up and the state of the display unit 700 53(B) in which the portable information terminal 751 is pulled out by the pull-out member 7502. For example, in the state shown in FIG. 53(A1), the display By hiding the rolled-up portion of the display unit 7001, the mobile information terminal 7500 Power consumption can be reduced.

[0598] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001 in place, a reinforcing frame may be provided on the side of the display unit 7001 .

[0599] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0600] An example of a foldable portable information terminal is shown in Figures 53(C) to (E). In the unfolded state, in Figure 53(D), the unfolded state or the folded state In the other state, which is in the process of changing to the other state, the portable information terminal 760 in the folded state in FIG. 53(E) The portable information terminal 7600 is highly portable when folded and can be folded up to 100 mm in length. The large, seamless display area provides excellent visibility.

[0601] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0602] Figures 53(F) and (G) show an example of a foldable portable information terminal. In FIG. 53(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 7001 faces outward. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can reduce dirt and scratches.

[0603] FIG. 53(H) shows an example of a flexible portable information terminal. The portable information terminal 7700 is The device has a housing 7701 and a display unit 7001. , 7703b, speakers 7704a, 7704b as audio output means, and an external connection port 7 The portable information terminal 7700 may have a display 705, a microphone 7706, and the like. The battery 7709 may be mounted on the display unit 7 It may be placed overlapping with 001.

[0604] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape or twisted. For example, the portable information terminal 7700 has a display unit 7001 on the inside or The mobile information terminal 7700 can be folded so that the front and rear panels face outward. The display unit 700 may be wound up in a roll. Since the portable information terminal 7700 can freely deform, even if it is dropped or has the advantage that it is less likely to be damaged even if an unintended external force is applied.

[0605] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Or, the housing 7701 can be fixed to the wall with a magnet or the like. , and can be conveniently used in a variety of situations.

[0606] FIG. 53(I) shows an example of a wristwatch-type portable information terminal. The device includes a keyboard 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. It may be placed overlapping with band 01 or band 7801.

[0607] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0608] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0609] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can start the application.

[0610] In addition, the portable information terminal 7800 can perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0611] The portable information terminal 7800 may also have an input / output terminal 7802. If the terminal has a 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the portable information terminal shown in the example is performed by non-contact power transmission without going through the input / output terminal. You may go.

[0612] Figures 54(A), (B), and (C) show an example of a foldable wristwatch-type portable information terminal. The mobile information terminal 7900 includes a display unit 7901, a housing 7902, a housing 7903, a band 79 04, operation buttons 7905, etc.

[0613] As shown in FIG. 54A, the portable information terminal 7900 has a housing 7902 on a housing 7903. By lifting the housing 7902 from the stacked state as shown in FIG. As shown in FIG. 54C, the display portion 7901 can be reversibly transformed into an expanded state. Therefore, the portable information terminal 7900 can be used with the display portion 7901 folded. It can be used in the normal state, and the display area can be expanded by unfolding the display section 7901. can be used.

[0614] In addition, the display portion 7901 has a function as a touch panel. The mobile information terminal 7900 can be operated by touching the operation button 7905. By pushing, rotating, or sliding it up and down, toward you, or toward the depth of the screen, The portable information terminal 7900 can be operated.

[0615] As shown in FIG. 54A, when the housing 7902 and the housing 7903 are overlapped, It is preferable to have a locking mechanism so that the body 7902 and the housing 7903 do not come apart unintentionally. At this time, the locked state can be released by, for example, pressing the operation button 7905. It is preferable to use a spring or other such restoring force to release the locked state. When the image is removed, it automatically changes from the state shown in FIG. 54(A) to the state shown in FIG. 54(C). Alternatively, instead of the locking mechanism, the housing 7902 and the housing 7903 may be connected to each other by magnetic force. The relative positions of the housing 7902 and the housing 903 may be fixed by using magnetic force. For example, the housing 7902 and the housing 7903 can be detached from each other. When a magnetic material is placed on one side and a magnetic material such as a ferromagnetic or paramagnetic material is placed on the other side, , it is sufficient to place it at a position where it overlaps with the ferromagnetic body.

[0616] In FIG. 54(A), (B), and (C), the bending direction of the band 7904 is approximately perpendicular to the bending direction of the band 7904. 54(D) and (E), the display unit 7901 can be opened in the direction shown in FIG. The display unit 7901 can be unfolded in a direction approximately parallel to the bending direction of the band 7904. In this case, the display portion 7901 may be curved so as to be wrapped around the band 7904. It may also be used in combination.

[0617] The electronic device described in this embodiment has a display unit for displaying some information. The display unit is characterized in that the display panel, the touch panel, or the like according to one embodiment of the present invention is used. A touch panel module or the like can be applied.

[0618] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0619] 10 Touch Panel Module 21 Substrate 22 Touch Sensor 23 Wiring 23a Wiring 23b Wiring 24 Wiring 24a Wiring 24b Wiring 26 Conductive Layer 26a conductive layer 26b Conductive layer 31 Substrate 32 Display section 34 Circuit 35 Wiring 36 Pixel electrode 37 Liquid crystal 38 Common electrode 40 Light emitting element 42 FPC 43 IC 47 EL layer 48 Common electrode 51 Signal Line 52 scan lines 53 Capacitive Line 54 Common Wiring 55 Power line 60 Liquid crystal element 61 Polarizing Plate 62 Polarizing Plate 63 Backlight 65 Colored layer 66 Light blocking layer 68 Adhesive layer 70 Transistor 70a transistor 70b transistor 71 Conductive layer 72 Semiconductor layer 73 Insulating Layer 74a Conductive layer 74b Conductive layer 75 Low resistance region 76 Conductive Layer 80 Pixel circuit 81 Insulating layer 82 Insulating layer 83 Insulating Layer 85 Capacitive element 90 pixels 91 Circuit 102 EL layer 103 Common electrode 111 Pixel electrode 112 Liquid crystal 113 Common electrode 123 Insulating Layer 124 Spacer 130 Polarizing Plate 130a Polarizing plate 130b Polarizing plate 131 Colored layer 132 Light blocking layer 141 Adhesive layer 142 Space 143 Desiccant 151 Pixel electrode 152 Liquid crystal 153 Common electrode 161 Substrate 162 Substrate 171 Substrate 172 Substrate 201 Transistor 202 Transistor 203 Capacitive element 204 Connection 205 Transistor 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 221 Conductive Layer 222 Conductive Layer 231 Semiconductor Layer 242 Connection Layer 243 Connectors 251 Adhesive layer 252 Adhesive layer 601 Pulse voltage output circuit 602 Current detection circuit 603 capacity 621 Electrode 622 Electrode 705 Insulation Layer 706 Electrode 707 Insulation Layer 708 Semiconductor Layer 710 Insulating layer 711 Insulating layer 714 Electrode 715 Electrode 722 Insulating layer 723 Electrode 724a electrode 724b electrode 726 Insulating Layer 727 Insulation Layer 728 Insulating Layer 729 Insulation Layer 741 Insulation Layer 742 Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 Circuit Board 772 Insulation Layer 810 Transistor 811 Transistor 820 Transistor 821 Transistor 825 Transistor 826 Transistor 830 Transistor 831 Transistor 840 Transistor 841 Transistor 842 Transistor 843 Transistor 844 Transistor 845 Transistor 846 Transistor 847 Transistor 5000 cabinet 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Stand 5013 Remote control device 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Band 5019 Clasp 5020 Icon 5021 Icon 6500 Touch Panel Module 6501 Circuit Unit 6502 Signal line driver circuit 6503 Sensor driver circuit 6504 Detection circuit 6505 Timing Controller 6506 Image processing circuit 6510 Touch Panel 6511 Display section 6512 Input section 6513 Scanning line driver circuit 6520 IC 6530 IC 6531 Board 6532 Opposing substrate 6533 FPC 6534 PCB 6540 CPU 7000 Display 7001 Display section 7100 Mobile Phone 7101 Case 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7200 Television Equipment 7201 Case 7203 Stand 7211 Remote control device 7300 Mobile Information Terminal 7301 Case 7302 Operation button 7303 Information 7304 Information 7305 Information 7306 Information 7310 Mobile Information Terminals 7320 Mobile Information Terminal 7400 Lighting Equipment 7401 Daibu 7402 Light emitting part 7403 Operation switch 7410 Lighting equipment 7412 Light emitting part 7420 Lighting equipment 7422 Light emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Portable Information Terminal 7701 Case 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Portable Information Terminal 7901 Display section 7902 Case 7903 Case 7904 Band 7905 Operation button 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8006 Display Panel 8007 Backlight 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

[Claim 1] A touch panel having a display unit, signal lines, scanning lines, first wiring, and second wiring, the display unit has a plurality of pixel electrodes; the pixel electrodes are arranged in a matrix along a first direction and a second direction intersecting the first direction; The signal line is provided to extend in the first direction, The scanning lines are provided to extend in the second direction, the first wiring is provided extending in the first direction, the second wiring is provided extending in the second direction, the first wiring has a first portion parallel to the signal line; the first portion is located between two of the pixel electrodes adjacent to each other in the second direction in a plan view, the second wiring has a second portion parallel to the scanning line; the second portion is located between two of the pixel electrodes adjacent to each other in the first direction in a plan view; Display device.

Images