Display device, display module, and electronic appliance

Abstract

To provide a display device with a novel structure.SOLUTION: A display device includes: a display part including a first subpixel, a second subpixel, a first gate line to which a first selection signal to scan the first subpixel is applied, and a second gate line to which a second selection signal to scan the second subpixel is applied; and a driving control circuit including a gate line driving circuit, a switching unit that distributes the first selection signal or the second selection signal output from the gate line driving circuit to the first gate line or the second gate line separately and outputs them, and a timing control circuit that controls the switching unit. In a first operation mode, the timing control circuit causes the gate line driving circuit to output the first selection signal with a first frame frequency and the second selection signal whose selection period is longer than the first selection signal. In a second operation mode, the timing control circuit outputs the first selection signal and the second selection signal with a second frame frequency lower than the first frame frequency.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] 1. Field of the Invention One embodiment of the present invention relates to a semiconductor device, a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] Display devices used in information terminal devices such as smartphones have become increasingly commoditized as a result of recent technological innovations, and in order to remain competitive in this environment, products with higher added value are required. For example, display devices are not only used to display photos or videos, but are also used for biometric authentication such as face recognition, fingerprint recognition, and vein recognition, or as light-receiving devices such as touch sensors and motion sensors, and their uses are diversifying. Patent Document 1 discloses an electronic device such as a smartphone that is capable of fingerprint authentication. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-79415 Summary of the Invention [Problem to be solved by the invention]

[0005] The detection operation performed by driving the light-receiving device is configured to be performed between display operations. In order to improve the display quality of the display operation, it is preferable to configure the display frame frequency to be high. When the display operation and the detection operation are performed alternately, the display frame frequency can be increased by increasing the frequency of the display operation and decreasing the frequency of the detection operation. However, if the scanning of the sub-pixels having the light-emitting devices during the display operation and the scanning of the sub-pixels having the light-receiving devices during the detection operation are controlled at different timings, a control signal must be provided to each drive circuit, which may increase the circuit size of the drive circuit.

[0006] To improve the accuracy of the detection operation performed by driving the light-receiving device, it is preferable to increase the frequency of the detection operation and decrease the frequency of the display operation. To achieve both improved display quality through the display operation and the accuracy of the detection operation, a configuration that allows switching between a state in which the display frame frequency is high and a state in which the frequency of the detection operation is high is preferable. Furthermore, the accuracy of the detection operation can be further improved by increasing the number of selection signals scanned by the sub-pixels having the light-receiving devices. However, if the frequency of the detection operation is made variable when the number of selection signals scanned by the sub-pixels having the light-receiving devices is large, there is a risk of increased power consumption due to continued unnecessary detection operations.

[0007] An object of one embodiment of the present invention is to provide a display device or the like having a novel structure.Another object of one embodiment of the present invention is to provide a display device or the like having a novel structure that can reduce an increase in circuit scale.Another object of one embodiment of the present invention is to provide a display device or the like having a novel structure that can suppress an increase in power consumption.Another object of one embodiment of the present invention is to provide a display device or the like having a novel structure that can increase the circuit scale and reduce power consumption in a display device that alternately performs a detection operation and a display operation.

[0008] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0009] One embodiment of the present invention provides a display unit including first subpixels each having a light-emitting device, second subpixels each having a light-receiving device, a first gate line to which a first selection signal for scanning the first subpixel is applied, and a second gate line to which a second selection signal for scanning the second subpixel is applied; a first switching unit that distributes the first selection signal or the second selection signal output by a gate line driver circuit to the first gate line or the second gate line; a gate line driver circuit that outputs the first selection signal or the second selection signal; a drive control circuit having a second switching unit that outputs signals separately from the first switching unit and a timing control circuit that controls the first switching unit and the second switching unit, wherein the timing control circuit has a function of switching between a first operation mode and a second operation mode, and in the first operation mode, the gate line drive circuit outputs a first selection signal at a first frame frequency and a second selection signal having a longer selection period than the first selection signal, and in the second operation mode, outputs the first selection signal and the second selection signal at a second frame frequency that is lower than the first frame frequency.

[0010] In one embodiment of the present invention, the display device preferably includes the first switching section and the second switching section each having an analog switch provided between the gate line driving circuit and the first gate line or the second gate line.

[0011] In one aspect of the present invention, the display device preferably has an image processor, and the image processor has a function of switching between a first operating mode and a second operating mode depending on whether the light receiving device detects an object or does not detect an object.

[0012] In one embodiment of the present invention, the light-emitting device is preferably a display device having a function of emitting visible light, and the light-receiving device is preferably a display device having a function of detecting visible light.

[0013] In one embodiment of the present invention, the light-emitting device is preferably a display device having a function of emitting infrared light, and the light-receiving device is preferably a display device having a function of detecting infrared light.

[0014] One aspect of the present invention is a display module including the display device described above and at least one of a connector and an integrated circuit.

[0015] One embodiment of the present invention is an electronic device including the display module described above and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0016] One embodiment of the present invention can provide a display device or the like with a novel structure. Alternatively, one embodiment of the present invention can provide a display device or the like with a novel structure that can reduce an increase in circuit scale. Alternatively, one embodiment of the present invention can provide a display device or the like with a novel structure that can suppress an increase in power consumption. Alternatively, one embodiment of the present invention can provide a display device or the like with a novel structure that can increase the circuit scale and reduce power consumption in a display device that alternately performs a detection operation and a display operation.

[0017] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0018] [Figure 1] 1A and 1B are diagrams showing an example of the configuration of a display device. [Figure 2] FIG. 2 is a diagram illustrating an example of the configuration of a display device. [Figure 3]3A to 3C are diagrams showing configuration examples of a display device. [Figure 4] FIG. 4 is a flowchart showing an example of the operation of the display device. [Figure 5] FIG. 5 is a diagram illustrating an example of the operation of the display device. [Figure 6] FIG. 6 is a diagram illustrating an example of the operation of the display device. [Figure 7] FIG. 7 is a timing chart showing an example of the operation of the display device. [Figure 8] FIG. 8 is a timing chart showing an example of the operation of the display device. [Figure 9] FIG. 9 is a diagram illustrating an example of the configuration of a display device. [Figure 10] FIG. 10 is a diagram showing an example of the configuration of a display device. [Figure 11] 11A to 11D are diagrams showing configuration examples of a display device. [Figure 12] 12A to 12D are diagrams showing configuration examples of a display device. [Figure 13] 13A to 13E are diagrams showing configuration examples of a display device. [Figure 14] Figures 14A, 14B, and 14D are cross-sectional views showing an example of a display device, and Figures 14C and 14E are diagrams showing examples of images captured by the display device. [Figure 15] FIG. 15 is a cross-sectional view showing an example of a display device. [Figure 16] 16A to 16C are cross-sectional views showing an example of a display device. [Figure 17] 17A to 17C are cross-sectional views showing an example of a display device. [Figure 18] 18A to 18C are diagrams showing an example of a display device. [Figure 19] 19A to 19C are diagrams showing an example of an electronic device. [Figure 20] 20A and 20B are a top view and a cross-sectional view showing an example of a display device. [Figure 21]21A to 21I are top views showing an example of a pixel. [Figure 22] 22A to 22E are top views showing an example of a pixel. [Figure 23] 23A and 23B are top views showing an example of a pixel. [Figure 24] 24A and 24B are top views showing an example of a pixel. [Figure 25] 25A and 25B are top views showing an example of a pixel. [Figure 26] 26A and 26B are top views showing an example of a pixel. [Figure 27] 27A and 27B are top views showing an example of a pixel. [Figure 28] FIG. 28 is a perspective view showing an example of a display device. [Figure 29] Fig. 29A is a cross-sectional view showing an example of a display device, Fig. 29B and Fig. 29C are cross-sectional views showing an example of a transistor. [Figure 30] FIG. 30 is a cross-sectional view showing an example of a display device. [Figure 31] 31A and 31B are perspective views showing an example of a display module. [Figure 32] FIG. 32 is a cross-sectional view showing an example of a display device. [Figure 33] 33A and 33B are perspective views showing an example of a display module. [Figure 34] FIG. 34 is a cross-sectional view showing an example of a display device. [Figure 35] FIG. 35 is a cross-sectional view showing an example of a display device. [Figure 36] FIG. 36 is a cross-sectional view showing an example of a display device. [Figure 37] FIG. 37 is a cross-sectional view showing an example of a display device. [Figure 38] 38A to 38D are diagrams showing an example of a transistor. [Figure 39] 39A and 39B are diagrams showing an example of an electronic device. [Figure 40] 40A to 40D are diagrams showing an example of an electronic device. [Figure 41] 41A to 41F are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0019] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0020] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0021] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0022] It should be noted that the terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0023] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described, particularly a circuit configuration of a pixel of the display device.

[0024] <Block diagram of display device> 1A shows a block diagram of the display device 10. The display device 10 includes a display unit 71, a signal line driving circuit 72, a gate line driving circuit 73, a control line driving circuit 74, a signal readout circuit 75, a timing control circuit 21, and the like.

[0025] The display unit 71 has a plurality of pixels 80 arranged in a matrix. Each pixel 80 has sub-pixels 81R, 81G, 81B, and 82PS. The sub-pixels 81R, 81G, and 81B each have a light-emitting device that functions as a display device. The sub-pixel 82PS has a light-receiving device that functions as a photoelectric conversion element.

[0026] The light-emitting device functions as a display device (also referred to as a display element). In a display device of one embodiment of the present invention, light-emitting devices are arranged in a matrix in a display portion, and an image can be displayed on the display portion. In addition, the display device of one embodiment of the present invention has a function of detecting light using a light-receiving device.

[0027] The light-emitting device preferably uses an EL device such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials used in EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). LEDs such as micro LEDs (light-emitting diodes) can also be used as light-emitting devices. A TADF material may be a material in which the singlet excited state and the triplet excited state are in thermal equilibrium. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of light-emitting devices.

[0028] In a display portion of a display device according to one embodiment of the present invention, light-receiving devices are arranged in a matrix. The display portion has an image display function and / or an imaging function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required to be provided separately from the display device, and the number of components in an electronic device can be reduced.

[0029] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0030] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0031] When the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0032] The pixel 80 is electrically connected to a wiring GL, a wiring SLR, a wiring SLG, a wiring SLB, a wiring RL, a wiring RS, a wiring WX, etc. The wirings SLR, SLG, and SLB are electrically connected to a signal line driver circuit 72. The wiring GL is electrically connected to a gate line driver circuit 73. The signal line driver circuit 72 functions as a source line driver circuit (also referred to as a source driver). The gate line driver circuit 73 may be referred to as a gate driver.

[0033] The pixel 80 has subpixels 81R, 81G, and 81B as subpixels having light-emitting devices. For example, the subpixel 81R is a subpixel that exhibits red, the subpixel 81G is a subpixel that exhibits green, and the subpixel 81B is a subpixel that exhibits blue. This allows the display device 10 to perform full-color display. Note that, although an example in which the pixel 80 has subpixels of three colors is shown here, the pixel 80 may have subpixels of four or more colors.

[0034] Subpixel 81R has a light-emitting device that emits red light. Subpixel 81G has a light-emitting device that emits green light. Subpixel 81B has a light-emitting device that emits blue light. Note that pixel 80 may have subpixels that have light-emitting devices that emit light of other colors. For example, pixel 80 may have, in addition to the above three subpixels, a subpixel that has a light-emitting device that emits white light or a subpixel that has a light-emitting device that emits yellow light.

[0035] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience, but a "sub-pixel" may also be referred to as a "pixel."

[0036] The wiring GL is electrically connected to the sub-pixels 81R, 81G, and 81B arranged in the row direction (extension direction of the wiring GL). The wiring SLR, wiring SLG, and wiring SLB are electrically connected to the sub-pixels 81R, 81G, and 81B arranged in the column direction (extension direction of the wiring SLR, etc.), respectively.

[0037] The sub-pixel 82PS of the pixel 80 is electrically connected to a wiring RL, a wiring RS, and a wiring WX. The wiring RL is electrically connected to the gate line driving circuit 73. The wiring RS is electrically connected to the control line driving circuit 74. The wiring WX is electrically connected to the signal readout circuit 75.

[0038] The control line driving circuit 74 has a function of generating signals for driving the sub-pixels 82PS and outputting them to the sub-pixels 82PS via the wiring RS. The signal readout circuit 75 has a function of receiving signals output from the sub-pixels 82PS via the wiring WX and outputting them to the outside as image data. The signal readout circuit 75 functions as a circuit that reads out image data.

[0039] In one embodiment of the present invention, the gate line driver circuit 73 outputs a selection signal (also referred to as a scan signal or a first selection signal) that selects subpixels 81R, 81G, and 81B as subpixels having light-emitting devices, and a selection signal (also referred to as a second selection signal) that selects subpixel 82PS as a subpixel having a light-receiving device. That is, the gate line driver circuit 73 can be configured to switch between scanning subpixels having light-emitting devices during display operation and scanning subpixels having light-receiving devices during detection operation, which are controlled at different timings. With this configuration, signals for control at different timings can be output from a single circuit, thereby reducing the circuit size of the driver circuit.

[0040] The timing control circuit 21 outputs a control signal TS for switching between scanning of sub-pixels having light-emitting devices when performing a display operation and scanning of sub-pixels having light-receiving devices when performing a detection operation. The timing control circuit 21 can control the operation state for switching between scanning of sub-pixels having light-emitting devices when performing a display operation and scanning of sub-pixels having light-receiving devices when performing a detection operation, based on a signal from, for example, an application processor or a touch controller.

[0041] A configuration example of the gate line driving circuit 73 and a configuration example of the wiring GL and wiring RL connected to the gate line driving circuit 73 will be described with reference to FIG. 1B.

[0042] 1B illustrates, as components of the gate line drive circuit 73, a drive circuit section 30 having a display section drive circuit 31 and a sensor section drive circuit 32, and a switching section 40 having an analog switch 41. Also, in FIG. 1B, subpixels 81 and 82 are illustrated as components of the display section 71 in which wirings GL and RL connected to the gate line drive circuit 73 are provided. Also, in FIG. 1B, a switching section 50 having an analog switch 51 and a switching section 60 having an analog switch 63 are illustrated as components connected to the wirings GL and RL. Also, in FIG. 1B, a timing control circuit 21 is illustrated that provides a control signal TS to control the analog switches of the switching sections 40, 50, and 60.

[0043] The display unit drive circuit 31 generates a selection signal GP that is output to a line GL. The sensor unit drive circuit 32 generates a selection signal RP that is output to a line RL. The selection signal GP is a signal for selecting a sub-pixel 81 during display operation. The selection signal RP is a signal for selecting a sub-pixel 82 during detection operation. The sub-pixel 81 corresponds to sub-pixels 81R, 81G, and 81B, and the sub-pixel 82 corresponds to sub-pixel 82PS. The display unit drive circuit 31 and the sensor unit drive circuit 32 are configured to switch between and output the selection signal GP or the selection signal RP based on a signal output from a common shift register, thereby preventing an increase in the circuit size of the drive circuit unit 30.

[0044] The switching units 40 and 50 have the function of distributing and outputting the selection signal GP or selection signal RP output from the drive circuit unit 30 to the wiring GL and wiring RL by switching the analog switches 41 and 51 on or off. The provision of the switching units 40 and 50 makes it possible to reduce the number of terminals between the drive circuit unit 30 and the display unit 71. The switching unit 60 has the function of setting the potentials of the wiring GL and wiring RL to a constant potential such as ground potential. By controlling the switching units 40, 50, and 60 using a control signal TS output by the timing control circuit 21, signals with different timings output by the drive circuit unit 30 can be switched between display operation and detection operation and provided to the subpixel 81 or the subpixel 82.

[0045] Fig. 2 shows a configuration in which an image processor 22 and an application processor 23 are added to the configuration of the block diagram shown in Fig. 1A. Fig. 2 also shows a mode switching signal MC that the image processor 22 outputs to control the timing control circuit 21, and sensor information data XD that the image processor 22 outputs to the application processor 23 based on a signal obtained by the detection operation.

[0046] When the detection operation is performed, the image processor 22 outputs a mode switching signal MC that controls the timing control circuit 21 depending on whether an object is detected or not. The timing control circuit 21 can switch between the display operation and the detection operation depending on the mode switching signal MC. This makes it possible to switch the operation mode depending on the usage state of the display device 10. The image processor 22 can output a mode switching signal MC that switches between the display operation and the detection operation based on the image data obtained by the signal readout circuit 75, i.e., the data obtained by detecting an object.

[0047] The application processor 23 can perform arithmetic processing to control each circuit of the display device 10, such as the timing control circuit 21 or the signal readout circuit 75, in accordance with sensor information data XD corresponding to the display operation or detection operation from the image processor 22.

[0048] 2, in the display device 10, the gate line driving circuit 73, the signal readout circuit 75, the timing control circuit 21, and the image processor 22 are preferably integrated into an integrated circuit, the driving control circuit 20. By integrating each circuit into an integrated circuit, i.e., a single IC chip, the circuit scale of the driving circuit can be reduced.

[0049] <Example of display device operation> An example of the operation of a display device that performs a display operation or a detection operation according to an object detection state or a non-detection state will be described with reference to FIGS. 3A to 5. FIG.

[0050] 3A is a state transition diagram showing how the display operation or the detection operation is switched depending on the object detection state or the non-detection state. As shown in FIG. 3A, the display device 10 described above transitions from the display operation to the detection operation when it enters the object detection state, and transitions from the detection operation to the display operation when it enters the object non-detection state. The display operation may be referred to as the first operation mode. The detection operation may be referred to as the second operation mode.

[0051] FIG. 3B shows a schematic diagram of the operation mode for the display operation. In the display operation, during one frame period (1 frame), the operation of writing image data (write) and the operation of reading image data (read) for a period shorter than the period of the write operation are performed alternately. It is preferable that one frame period in the display operation be short, for example, 1 / 120 seconds. The frame frequency of one frame period in the display operation is also referred to as the first frame frequency.

[0052] During the display operation, the write operation within one frame period is shorter than the frame period, and the read operation is even shorter. During the write operation, the wiring GL that outputs the selection signal for the gate drive circuit is configured to output one signal to each row. During the write operation, the pulse width (selection period) of the selection signal for the gate drive circuit becomes shorter.

[0053] Furthermore, during the readout operation in the display operation, the wiring RL that outputs the selection signal of the gate drive circuit is configured to output signals in multiple rows at once (low-resolution readout), making it possible to capture an image of the entire device even with a short readout operation period. During the readout operation, if the purpose is simple object detection, the captured image does not need to be generated at the maximum resolution of the light-receiving device. With a configuration that outputs signals in multiple rows, the pulse width (selection period) of the selection signal of the gate drive circuit output to the wiring RL is longer than when signals are output to the wiring RL one row at a time. In other words, the selection signal of the gate drive circuit output to the wiring RL can ensure a sufficient selection period during the readout operation.

[0054] 3B, it is possible to periodically perform a read operation to determine whether the display is in a detection state or a non-detection state while displaying at a high frame frequency, thereby enabling a transition to a detection operation without degrading the display quality.

[0055] FIG. 3C shows a schematic diagram of the operation mode of the detection operation. In the detection operation, the operation of writing image data (write) and the operation of reading captured image data (read) are performed alternately in one frame period (1 frame). The one frame period in the detection operation is preferably longer than that in the display operation, for example, 1 / 60 seconds. The frame frequency of one frame period in the detection operation is also called the second frame frequency.

[0056] The write operation within one frame period of the detection operation is configured to output a signal to all rows of the wiring GL that outputs the selection signal of the gate drive circuit, one row at a time. Note that one frame period of the detection operation is longer than one frame period of the display operation, so the frequency of the write operation is reduced.

[0057] Furthermore, during the readout operation in the detection operation, the wiring RL that outputs the gate drive circuit selection signal is configured to output it to all rows one by one. During the readout operation, the pulse width (selection period) of the gate drive circuit selection signal output to the wiring RL is the same as during the write operation. Therefore, during the write operation and readout operation, the gate drive circuit selection signal output to the wiring GL and the wiring RL sequentially selects sub-pixels in each row by a signal output at a frame frequency lower than during the display operation.

[0058] 3C, the image data can be displayed, the image data can be written, and the image data can be read row by row, allowing the state of the detected object to be detected with high accuracy.

[0059] FIG. 4 is a flowchart illustrating an object detection state or non-detection state that triggers a transition to a display operation or a detection operation.

[0060] 5 is a schematic diagram for explaining the transition between display operation and detection operation. In FIG. 5, the signal line drive circuit 72 and gate line drive circuit 73 that write image data are shown as "SD / GD," and the gate line drive circuit 73, control line drive circuit 74, and signal readout circuit 75 that read out imaging data are shown as "CD / RD." Also, the determination of the image processor 22, which determines whether or not an object is detected based on the imaging data, is shown as "22." The image processor 22 outputs a mode switching signal MC that switches the operating mode, and is capable of detecting or not detecting an object and performing imaging processing.

[0061] First, in the display operation (step S11), as explained in Fig. 3B, an image is displayed on the display device, and multiple rows are scanned simultaneously to acquire image data. At this time, as shown in Fig. 5, an image data write operation is performed in the SD / GD, and an image data read operation is performed in the CD / RD. The write operation and read operation are performed in 1 / 120 s (the period between times T01 and T02), as explained in Fig. 3B.

[0062] Next, a determination is made as to whether an object has been detected (step S12). This determination is made based on the image data acquired in step S11. At this time, the image processor 22 shown in FIG. 5 determines whether or not an object has been detected based on the image data. The acquisition of image data during the display operation is performed for the purpose of detecting whether or not an object is close to the display device. If there is no object close to the display device (NO), step S11 continues.

[0063] If an object is present near the display device (YES), the process proceeds to the detection operation (step S13). In FIG. 5, the image processor 22 determines whether an object has been detected based on the imaging data just before time T02, which causes mode switching. Therefore, at time T02, the display operation is switched to the detection operation by the mode switching signal MC. The write operation and read operation in the detection operation are performed in 1 / 60 seconds (the period between times T02 and T03), as described in FIG. 3C. The imaging process based on the acquired imaging data is performed over the period of the write operation and read operation in the detection operation. Therefore, the state of the object can be detected with high accuracy.

[0064] The determination of object detection is made again (step S14). This determination is made based on the image data read out in step S13. If an object is present near the display device (YES), step S13 continues.

[0065] If there is no object close to the display device (NO), the operation shifts to display operation. This shift is set to occur, for example, when the image processor 22 continues to detect no object based on the image data for a period of multiple frames. In Figure 5, at time T04, the image processor 22 determines that no object has been detected based on the image data, and the mode is switched from detection operation to display operation.

[0066] A display device according to one embodiment of the present invention can be configured to switch between a detection operation and a display operation based on whether an object is detected or not. Therefore, to improve the accuracy of the detection operation, the period of the detection operation can be lengthened and the period of the display operation can be shortened. During the detection operation, the resolution of the detection operation can be increased by increasing the number of selection signals scanned by the subpixel having the light-receiving device. During the display operation, unnecessary detection operations can be suppressed by lowering the resolution of object detection, thereby suppressing an increase in power consumption.

[0067] <Operation of the drive circuit> Next, an example of the configuration and operation of the drive circuit section 30 included in the display device 10 described above will be described with reference to FIGS.

[0068] 6 illustrates a drive circuit 34 included in the drive circuit unit 30. Also illustrated in Fig. 6 are, as an example, a clock signal CLK, a start pulse signal SP, a shift register circuit SR and its output signals SHIFT[1], SHIFT[2], control signals PWC[1] to PWC[4], an AND circuit 33, and a level shift circuit LS. The drive circuit unit 30 can output selection signals to be applied to the wirings GL[1] to GL[8] and the wirings RL[1] to RL[8].

[0069] When the same symbol is used for multiple elements, and it is particularly necessary to distinguish between them, an identification symbol such as "_1", "_2", "[n]", or "[m,n]" is added to the symbol. For example, the second wiring GL is written as wiring GL[2].

[0070] The output signal SHIFT[1] is a pulse signal output from the first-stage shift register circuit SR in response to the input of the clock signal CLK and the start pulse signal SP. The output signal SHIFT[2] is a pulse signal output from the second-stage shift register circuit SR in response to the input of the clock signal CLK and the output signal SHIFT[1]. The control signals PWC[1] to PWC[4] are signals for controlling the selection period of the pulse signal output from the shift register circuit SR. The AND circuit 33 is a circuit that outputs a signal corresponding to the logical product of one of the control signals PWC[1] to PWC[4] and the pulse signal output from the shift register circuit SR. The level shift circuit LS is a circuit that converts the amplitude voltage of an input signal to a predetermined amplitude voltage and outputs the signal to the wiring GL (GL[1] to GL[8]) and the wiring RL (RL[1] to RL[8]). Whether the signal is output to the wiring GL or the wiring RL can be switched by turning on or off the analog switches provided in the switching units 40 and 50.

[0071] Figures 7 and 8 show timing charts of various signals of the drive circuit unit 30 of Figure 6. Figure 7 shows a timing chart during display operation when a selection signal is output to the line GL. Figure 8 shows a timing chart during detection operation when a selection signal is output to the line RL.

[0072] As shown in Fig. 7, during display operation, selection signals can be sequentially output to the wiring GL of each row. The output signals SHIFT[1] and SHIFT[2] output by the shift register circuit SR can be output as signals with short selection periods in accordance with the control signals PWC[1] to PWC[4] shown in Fig. 7.

[0073] As shown in Fig. 8, during the detection operation, the same selection signal can be sequentially output to multiple rows of wiring RL. The output signals SHIFT[1] and SHIFT[2] output by the shift register circuit SR can be output as signals with long selection periods in accordance with the control signals PWC[1] to PWC[4] shown in Fig. 8.

[0074] It is preferable that the selection signal applied to the wiring GL and the selection signal applied to the wiring RL have different amplitude voltages. The configuration shown in Fig. 9 illustrates an example of a configuration in which, when the signal output from the AND circuit 33 is distributed to the wiring GL or the wiring RL, the selection signal GP or the selection signal RP is output via separate level shift circuits 35 (GDLS) and 36 (RDLS). The level shift circuit 35 is supplied with voltages GVDD and GVSS, and can output the selection signal GP with an amplitude voltage corresponding to these voltages. The level shift circuit 36 ​​is supplied with voltages RVDD and RVSS, which are different from the voltages GVDD and GVSS, and can output the selection signal RP with an amplitude voltage corresponding to these voltages.

[0075] The distribution of signals to be output to the wirings according to the display operation or the detection operation may be applied to the wirings SL and WX connected to the drive control circuit having the signal line drive circuit 72 and the signal readout circuit 75.

[0076] The drive control circuit 20A shown in Fig. 10 includes a signal line drive circuit 72, a signal readout circuit 75, and a switching unit 40 having an analog switch 41. Fig. 10 also shows a switching unit 50 having an analog switch 51 between the drive control circuit 20A and the display unit 71. Fig. 10 also shows a timing control circuit 21 that provides a control signal TS that controls each analog switch in the switching units 40, 50.

[0077] 10, for example, during a display operation, the analog switches of the switching units 40 and 50 can be switched to output a data signal to be provided to the sub-pixel 81, which is output from the signal line driving circuit 72. Also, for example, during a detection operation, the drive control circuit 20A shown in Fig. 10 can switch the analog switches of the switching units 40 and 50 to selectively read out a readout signal from the sub-pixel 82, which is input to the signal readout circuit 75, via the sense amplifier circuit SA.

[0078] <Pixel circuit configuration example> Examples of circuit diagrams of pixel circuits that can be applied to the subpixel 81R, the subpixel 81G, and the subpixel 81B are shown in FIGS. 11A to 11D and 12A to 12D.

[0079] The pixel circuit 81_1 shown in Fig. 11A illustrates a transistor 55A, a transistor 55B, and a capacitor 56. Fig. 11A also illustrates a light-emitting device 61 connected to the pixel circuit 81_1. Fig. 11A also illustrates a wiring SL, a wiring GL, a wiring ANO, and a wiring VCOM.

[0080] The transistor 55A has a gate electrically connected to the wiring GL, one of its source and drain electrically connected to the wiring SL, and the other electrically connected to the gate of the transistor 55B and one electrode of the capacitor 56. The transistor 55B has one of its source and drain electrically connected to the wiring ANO, and the other electrically connected to the anode of the light-emitting device 61. The capacitor 56 has the other electrode electrically connected to the anode of the light-emitting device 61. The light-emitting device 61 has a cathode electrically connected to the wiring VCOM.

[0081] The transistor 55A functions as a switch, and the transistor 55B functions as a transistor for controlling the current flowing through the light-emitting device 61.

[0082] Here, it is preferable that the transistors 55A and 55B be transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors). Alternatively, it is preferable that the transistor 55A be a transistor having a metal oxide (also referred to as an oxide semiconductor) in its channel formation region (hereinafter referred to as an OS transistor), and the transistor 55B be a Si transistor.

[0083] Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. Si transistors have high field-effect mobility and good frequency characteristics. For example, a transistor having low-temperature polysilicon (LTPS) in the channel formation region (hereinafter referred to as an LTPS transistor) can be used.

[0084] By using Si transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, simplifying the external circuits mounted on the display device and reducing component and mounting costs.

[0085] The oxide semiconductor preferably contains, for example, indium, a metal M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin. In particular, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used for the semiconductor layer of the OS transistor. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used.

[0086] An OS transistor using an oxide semiconductor having a wider band gap and a lower carrier density than silicon can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the OS transistor to be held for a long period of time. Therefore, it is preferable to use an OS transistor, particularly for the transistor 55A connected in series with the capacitor 56. Using an OS transistor as the transistor 55A can prevent charge stored in the capacitor 56 from leaking through the transistor 55A. Furthermore, because charge stored in the capacitor 56 can be held for a long period of time, a still image can be displayed for a long period of time without rewriting data in the pixel circuit 81_1.

[0087] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1 × 10 -18 A) Below, 1zA(1×10 -21 A) or less, or 1yA (1 x 10 -24 A) or less. Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1×10 -15 A) More than 1pA (1×10 -12 Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0088] For example, by using both an LTPS transistor and an OS transistor for the transistors 55A and 55B, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. As a more preferred example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and to use an LTPS transistor as a transistor for controlling current.

[0089] The light emitting device 61 has a function of emitting light (hereinafter also referred to as a light emitting function). The light emitting device 61 is preferably an organic EL device (organic electroluminescent device).

[0090] 11B is configured by adding a transistor 55C to the pixel circuit 81_1. A wiring V0 that applies a constant potential is electrically connected to the pixel circuit 81_2.

[0091] A pixel circuit 81_3 shown in Fig. 11C is an example in which transistors each having a pair of gates are applied to the transistors 55A and 55B of the pixel circuit 81_3. A pixel circuit 81_4 shown in Fig. 11D is an example in which the same transistors are applied to the pixel circuit 81_2. Note that, although transistors each having a pair of gates are applied to all the transistors here, this is not limiting.

[0092] In a transistor having a pair of gates, when the pair of gates are electrically connected to each other and supplied with the same potential, the on-state current of the transistor is increased and the saturation characteristics are improved. A potential for controlling the threshold voltage of the transistor may be supplied to one of the pair of gates. Supplying a constant potential to one of the pair of gates can improve the stability of the electrical characteristics of the transistor. For example, one gate of the transistor may be electrically connected to a wiring to which a constant potential is supplied, or to its own source or drain.

[0093] 12A has a configuration in which a transistor 55D is added to the pixel circuit 81_2. The pixel circuit 81_5 is electrically connected to three wirings (a wiring GL1, a wiring GL2, and a wiring GL3) that function as gate lines.

[0094] The gate of the transistor 55D is electrically connected to the wiring GL3, one of the source and the drain of the transistor 55B is electrically connected to the wiring V0, and the gate of the transistor 55A is electrically connected to the wiring GL1, and the gate of the transistor 55C is electrically connected to the wiring GL2.

[0095] By simultaneously turning on transistors 55C and 55D, the source and gate of transistor 55B have the same potential, making it possible to turn off transistor 55B. This forcibly cuts off the current flowing through light-emitting device 61. This pixel circuit is suitable for use in a display method in which display periods and off periods are alternately provided.

[0096] 12B is an example in which a capacitor 56A is added to the pixel circuit 81_5. The capacitor 56A functions as a storage capacitor.

[0097] 12C and 12D are examples in which transistors having a pair of gates are applied to the pixel circuit 81_5 or 81_6, respectively. Transistors in which a pair of gates are electrically connected are applied to the transistor 55A, the transistor 55C, and the transistor 55D, and a transistor in which one gate is electrically connected to its source is applied to the transistor 55B.

[0098] Next, examples of circuit diagrams of pixel circuits that can be applied to the subpixel 82PS are shown in FIGS. 13A to 13E. In addition to the wiring RL and wiring WX, FIGS. 13A to 13E also show wiring RS and wiring TX. For example, the wiring RL is a wiring that transmits a selection signal for reading data from the pixel circuit. For example, the wiring RS is a wiring that transmits a reset signal that initializes the pixel circuit. For example, the wiring WX is a wiring that transmits a signal that is read out from the pixel circuit. For example, the wiring TX is a wiring that transmits a transfer signal that controls the current flowing through the light-receiving device 62. The pixel circuit that can be applied to the subpixel 82PS is also connected to a wiring that transmits a constant potential.

[0099] The pixel circuit 82_1 shown in Fig. 13A includes a transistor 57A, a transistor 57B, a transistor 57C, and a capacitor 58, and the transistors and the capacitor are connected as shown in Fig. 13A. Fig. 13A also shows a light-receiving device 62 connected to the pixel circuit 82_1.

[0100] The light receiving device 62 has a function of detecting light (hereinafter also referred to as a light receiving function). For example, a pn-type or pin-type photodiode can be used as the light receiving device 62. The light receiving device 62 has a function of detecting visible light. The light receiving device 62 is sensitive to visible light. It is more preferable that the light receiving device 62 has a function of detecting visible light and infrared light. It is preferable that the light receiving device 62 is sensitive to at least either visible light or infrared light.

[0101] In this specification, the blue (B) wavelength range is from 400 nm to less than 490 nm, and blue (B) light has at least one emission spectrum peak in this wavelength range. The green (G) wavelength range is from 490 nm to less than 580 nm, and green (G) light has at least one emission spectrum peak in this wavelength range. The red (R) wavelength range is from 580 nm to less than 700 nm, and red (R) light has at least one emission spectrum peak in this wavelength range. Also, in this specification, the visible light wavelength range is from 400 nm to less than 700 nm, and visible light has at least one emission spectrum peak in this wavelength range. The infrared (IR) wavelength range is from 700 nm to less than 900 nm, and infrared (IR) light has at least one emission spectrum peak in this wavelength range.

[0102] The active layer of the light-receiving device 62 includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In particular, it is preferable to use an organic photodiode having a layer containing an organic semiconductor as the light-receiving device 62. Organic photodiodes are easily made thin, lightweight, and large-area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices. Furthermore, using an organic semiconductor is preferable because the EL layer of the light-emitting device 61 and the light-receiving layer of the light-receiving device 62 can be formed by the same method (e.g., vacuum deposition), allowing the use of common manufacturing equipment.

[0103] A display device according to one embodiment of the present invention can suitably use an organic EL device as the light-emitting device 61 and an organic photodiode as the light-receiving device 62. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be built into a display device using an organic EL device. The display device according to one embodiment of the present invention has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0104] A pixel circuit 82_2 shown in FIG. 13B has a configuration in which the transistor 57B in the pixel circuit 82_1 is replaced with a transistor having a pair of gates. A pixel circuit 82_3 shown in FIG. 13C is an example in which transistors having a pair of gates are applied to the transistors 57A to 57C of the pixel circuit 82_2. A pixel circuit 82_4 shown in FIG. 13D is an example in which the arrangement of the transistor 57C is changed. A pixel circuit 82_5 shown in FIG. 13E is an example in which a transistor 57D is added.

[0105] As described above, a display device according to one embodiment of the present invention is configured to output a selection signal for selecting a sub-pixel having a light-emitting device and a selection signal for selecting a sub-pixel having a light-receiving device. That is, the gate line driver circuit can be configured to switch between scanning the sub-pixels having a light-emitting device during a display operation and scanning the sub-pixels having a light-receiving device during a detection operation, which are controlled at different timings. With this configuration, signals for control at different timings can be output from a single circuit, thereby reducing the circuit scale of the driver circuit.

[0106] In addition, the display device of one embodiment of the present invention can be configured to switch between a detection operation and a display operation based on whether an object is detected or not. Therefore, to improve the accuracy of the detection operation, the period of the detection operation can be extended and the period of the display operation can be shortened. During the detection operation, the resolution of the detection operation can be increased by increasing the number of selection signals scanned by the subpixel having the light-receiving device. During the display operation, unnecessary detection operations can be suppressed by lowering the resolution of object detection, thereby suppressing an increase in power consumption.

[0107] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0108] (Embodiment 2) In this embodiment mode, application modes and the like of a display device including the light-emitting device and the light-receiving device described in the above embodiment modes will be described.

[0109] 14A is a schematic diagram of a display device of one embodiment of the present invention. The display device 200 shown in FIG. 14A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-receiving device 212PS, a functional layer 203, and the like.

[0110] The light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212PS are provided between the substrate 201 and the substrate 202. The light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B emit red (R), green (G), or blue (B) light, respectively. The light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B may be the light-emitting devices described above. The light-receiving device 212PS may be the light-receiving device described above. Note that, hereinafter, when there is no need to particularly distinguish between the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, they may be referred to as the light-emitting device 211.

[0111] 14A shows a state in which finger 220 touches the surface of substrate 202. A portion of light emitted from a light-emitting device (for example, light-emitting device 211G) is reflected at the contact point between substrate 202 and finger 220. Then, a portion of the reflected light is incident on light-receiving device 212PS, which makes it possible to detect that finger 220 has touched substrate 202. In other words, display device 200 can function as a touch panel.

[0112] The functional layer 203 has a circuit for driving the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, and a circuit for driving the light-receiving device 212PS. The functional layer 203 is provided with switches, transistors, capacitors, wiring, and the like. Note that when the light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212PS are driven by a passive matrix method, the functional layer 203 may be configured without the switches and transistors.

[0113] The display device 200 can detect, for example, the fingerprint of a finger 220. Fig. 14B is a schematic enlarged view of a contact portion between the substrate 202 and the finger 220. Fig. 14B also shows light-emitting devices 211 and light-receiving devices 212 arranged alternately.

[0114] A fingerprint is formed by concave and convex portions of finger 220. Therefore, the convex portions of the fingerprint are in contact with substrate 202 as shown in FIG.

[0115] Light reflected from a surface or interface can be specularly reflected or diffusely reflected. Specularly reflected light is highly directional light, with the angle of incidence and the angle of reflection matching, while diffusely reflected light is less directional light, with its intensity less dependent on the angle. The diffuse reflection component is dominant in the light reflected from the surface of the finger 220. On the other hand, the specular reflection component is dominant in the light reflected from the interface between the substrate 202 and the atmosphere.

[0116] The intensity of light reflected by the contact or non-contact surface between finger 220 and substrate 202 and incident on light receiving device 212 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of finger 220, substrate 202 and finger 220 do not come into contact, so specularly reflected light (indicated by solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by dashed arrows) from finger 220 is dominant. Therefore, the intensity of light received by light receiving device 212 located directly below the concave portions is higher than that of light receiving device 212 located directly below the convex portions. This makes it possible to capture an image of the fingerprint of finger 220.

[0117] A clear fingerprint image can be obtained by arranging the light receiving devices 212 at an interval smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent concave and convex portions. Since the distance between concave and convex portions of a human fingerprint is approximately 200 μm, for example, the interval between the light receiving devices 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0118] An example of a fingerprint image captured by display device 200 is shown in Fig. 14C. In Fig. 14C, the outline of finger 220 is indicated by a dashed line and the outline of contact portion 224 is indicated by a dashed line within imaging range 227. Within contact portion 224, a fingerprint 222 with high contrast can be captured due to differences in the amount of light incident on light receiving device 212.

[0119] The display device 200 can also function as a touch panel or a pen tablet. Fig. 14D shows a state in which the tip of a stylus 229 is in contact with the substrate 202 and is slid in the direction of the dashed arrow.

[0120] As shown in Figure 14D, the diffuse reflected light diffused by the tip of stylus 229 and the contact surface of substrate 202 is incident on light receiving device 212 located at the overlapping portion with the contact surface, thereby enabling the position of the tip of stylus 229 to be detected with high accuracy.

[0121] 14E shows an example of a trajectory 226 of a stylus 229 detected by the display device 200. The display device 200 is capable of detecting the position of a detectable object such as the stylus 229 with high positional accuracy, and therefore is also capable of performing high-resolution drawing in a drawing application or the like. Furthermore, unlike the case where a capacitance-type touch sensor, an electromagnetic induction-type touch pen, or the like is used, the position of even a highly insulating detectable object can be detected, and therefore the material of the tip of the stylus 229 is not a factor, and various writing implements (for example, a brush, a glass pen, or a feather pen) can be used.

[0122] The light receiving device 212PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). FIG. 15 shows how light 191 emitted from a light emitting device (e.g., light emitting device 211G) is reflected by an object (e.g., finger 220), and the reflected light 192 is incident on the light receiving device 212PS. Although the object is not in contact with the display device 200, the object can be detected using the light receiving device 212PS. Note that the wavelength of light to be detected by the light receiving device 212PS may be determined appropriately depending on the application.

[0123] A touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not come into contact with the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration enables the display device to be operated without the object directly touching it, in other words, it enables non-contact (touchless) operation of the display device. This configuration reduces the risk of the display device becoming dirty or scratched, or enables the display device to be operated without the object directly touching dirt (e.g., dust or viruses) attached to the display device.

[0124] The display device of one embodiment of the present invention can vary the refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0125] It is preferable that the light receiving device 212PS is provided in all pixels of the display device. By providing the light receiving device 212PS in all pixels, touch can be detected with high accuracy. Note that the light receiving device 212PS may be provided in some pixels. For example, the display device may have pixels provided with both a light emitting device and a light receiving device, and pixels provided with a light receiving device (without a light emitting device only).

[0126] 16A shows an example of a configuration different from the above-described display device 200. The display device 200A shown in Fig. 16A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-emitting device 211IR, a light-receiving device 212PS, and a functional layer 203. The display device 200A differs from the above-described display device 200 mainly in that the display device 200A includes the light-emitting device 211IR.

[0127] The light emitting device 211R, the light emitting device 211G, the light emitting device 211B, and the light receiving device 212PS are provided between the substrate 201 and the substrate 202. The light emitting device 211IR emits infrared light. The light emitting device described above can be used as the light emitting device 211IR.

[0128] 16A shows a state in which finger 220 touches the surface of substrate 202. A portion of light emitted from a light-emitting device (for example, light-emitting device 211IR) is reflected at the contact point between substrate 202 and finger 220. A portion of the reflected light is then incident on light-receiving device 212PS, making it possible to detect that finger 220 has touched substrate 202. For example, by emitting infrared light from light-emitting device 211IR and detecting the infrared light with light-receiving device 212PS, touch detection becomes possible even in a dark place.

[0129] The display device 200A can display an image on the display unit using the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, and can perform touch detection on the display unit using the light-emitting device 211IR and the light-receiving device 212PS. The display device 200A can also display an image on the display unit and can also capture an image on the display unit.

[0130] 16B shows how light 191 emitted from light-emitting device 211G is reflected by an object (e.g., finger 220) and the reflected light 192 is incident on light-receiving device 212PS. FIG. 16C shows how light 191 emitted from light-emitting device 211IR is reflected by an object (e.g., finger 220) and the reflected light 192 is incident on light-receiving device 212PS. Although the object is not in contact with display device 200A, the object can be detected using light-receiving device 212PS.

[0131] 17A shows an example of a configuration different from the display device 200A described above. The display device 200B shown in Fig. 17A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-emitting device 211IR, a light-receiving device 212PS, a light-receiving device 212IRS, and a functional layer 203. The display device 200B differs from the display device 200A described above mainly in the configuration of the light-receiving device.

[0132] The light emitting device 211R, the light emitting device 211G, the light emitting device 211B, the light receiving device 212PS, and the light receiving device 212IRS are provided between the substrate 201 and the substrate 202. The light receiving device 212PS receives visible light. The light receiving device 212IRS receives infrared light. The light receiving device 212PS and the light receiving device 212IRS can use the light receiving devices described above.

[0133] 17A shows a state in which a finger 220 touches the surface of the substrate 202. A part of the light emitted from a light-emitting device (for example, light-emitting device 211IR) is reflected at the contact point between the substrate 202 and the finger 220. Then, a part of the reflected light is incident on the light-receiving device 212IRS, and it is possible to detect that the finger 220 has touched the substrate 202.

[0134] 17B shows how light 191 emitted from light-emitting device 211IR is reflected by an object (e.g., finger 220) and the reflected light 192 is incident on light-receiving device 212IRS. FIG. 17C shows how light 191 emitted from light-emitting device 211G is reflected by an object (e.g., finger 220) and the reflected light 192 is incident on light-receiving device 212PS. Although the object is not in contact with display device 200B, the object can be detected using light-receiving device 212PS or light-receiving device 212IRS.

[0135] The area of ​​the light receiving region of the light receiving device 212PS (hereinafter also referred to as the light receiving area) is preferably smaller than the light receiving area of ​​the light receiving device 212IRS. By reducing the light receiving area of ​​the light receiving device 212PS, that is, by narrowing the imaging range, the light receiving device 212PS can capture images with higher resolution than the light receiving device 212IRS. In this case, the light receiving device 212PS can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), faces, or the like. Note that the wavelength of light to be detected by the light receiving device 212PS may be determined appropriately depending on the application.

[0136] The method of detecting an object may be selected depending on the function due to the difference in detection accuracy between the light receiving device 212PS and the light receiving device 212IRS. For example, the scrolling function of the display screen may be realized by a near-touch sensor function using the light receiving device 212IRS, and the input function using a keyboard displayed on the screen may be realized by a high-definition touch sensor function using the light receiving device 212PS.

[0137] By incorporating two types of light-receiving devices into one pixel, two additional functions can be added in addition to the display function, making it a multi-function display device.

[0138] In order to capture high-resolution images, it is preferable that the light receiving devices 212PS are provided in all pixels of the display device. On the other hand, the light receiving devices 212IRS used in touch sensors or near-touch sensors do not require higher accuracy than detection using the light receiving devices 212PS, so they may be provided in some of the pixels of the display device. The detection speed can be increased by reducing the number of light receiving devices 212IRS provided in the display device compared to the number of light receiving devices 212PS.

[0139] As described above, the display device of this embodiment can be a multi-functional display device by incorporating a light-emitting device and a light-receiving device in one pixel. For example, it is possible to realize a display device having a high-resolution imaging function and a sensing function such as a touch sensor or a near-touch sensor.

[0140] A display device according to one embodiment of the present invention may emit light of a specific color and receive light reflected by an object. Fig. 18A shows, with arrows, red light emitted from the display device and red light reflected by an object (here, finger 220) and incident on the display device. Fig. 18B shows, with arrows, infrared light emitted from the display device and infrared light reflected by an object (here, finger 220) and incident on the display device.

[0141] The transmittance of the object to red light can be measured by emitting red light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device. Similarly, the transmittance of the object to infrared light can be measured by emitting infrared light while the object is in contact with or close to the display device and allowing the reflected light from the object to enter the display device.

[0142] 18C is an enlarged view of region P indicated by the dashed-dotted line in FIG. 18A. Light 191 emitted from light-emitting device 211R is scattered by the surface and internal biological tissue of finger 220, and some of the scattered light travels from inside the biological tissue toward light-receiving device 212PS. This scattered light passes through blood vessel 91, and transmitted light 192 enters light-receiving device 212PS.

[0143] Similarly, the infrared light emitted from the light-emitting device 211IR is scattered by the surface and internal biological tissue of the finger 220, and some of the scattered infrared light travels from inside the biological tissue toward the light-receiving device 212IRS. This scattered infrared light passes through the blood vessel 91, and the transmitted infrared light enters the light-receiving device 212IRS.

[0144] Here, light 192 is light that has passed through biological tissue 93 and blood vessels 91 (arteries and veins). Because arterial blood pulsates with the heartbeat, the light absorption by the arteries varies according to the heartbeat. On the other hand, because the biological tissue 93 and veins are not affected by the heartbeat, the light absorption by the biological tissue 93 and the light absorption by the veins are constant. Therefore, by removing the components that remain constant over time from the light 192 incident on the display device, the light transmittance of the arteries can be calculated. In addition, the transmittance of red light is lower for hemoglobin that is not bound to oxygen (also called deoxyhemoglobin) than for hemoglobin that is bound to oxygen (also called oxygenated hemoglobin). The transmittance of infrared light is similar for oxygenated hemoglobin and deoxyhemoglobin. By measuring the transmittance of the artery to red light and the transmittance of the artery to infrared light, the ratio of oxygenated hemoglobin to the sum of oxygenated hemoglobin and deoxyhemoglobin, that is, oxygen saturation (hereinafter also referred to as peripheral oxygen saturation (SpO2)), can be calculated. In this way, the display device according to one embodiment of the present invention can function as a reflective pulse oximeter.

[0145] For example, when a finger touches a display unit of a display device, position information of the area touched by the finger is acquired. Then, red light is emitted from pixels in the area touched by the finger and in the vicinity thereof, and the transmittance of the artery for the red light is measured. Next, infrared light is emitted and the transmittance of the artery for the infrared light is measured, thereby calculating oxygen saturation. The order in which the transmittance for red light and the transmittance for infrared light are measured is not particularly limited. The transmittance for infrared light may be measured first, and then the transmittance for red light. While an example of calculating oxygen saturation using a finger has been described here, one embodiment of the present invention is not limited thereto. Oxygen saturation can also be calculated using a site other than a finger. For example, oxygen saturation can be calculated by measuring the transmittance for red light and the transmittance for infrared light while the palm is in contact with the display unit of a display device.

[0146] 19A illustrates an example of an electronic device to which the display device of one embodiment of the present invention is applied. A mobile information terminal 400 illustrated in FIG. 19A can be used as, for example, a smartphone. The mobile information terminal 400 includes a housing 402 and a display portion 404. The display device described above can be used for the display portion 404. For example, the display device 200B described above can be suitably used for the display portion 404.

[0147] Fig. 19A shows a state in which a finger 406 is in contact with a display unit 404 of a mobile information terminal 400. In Fig. 19A, the area where the touch is detected and an area 408 nearby are indicated by dashed lines.

[0148] The mobile information terminal 400 emits red light from the pixels in the region 408 and detects the red light that enters the display unit 404. Similarly, the oxygen saturation of the finger 406 can be measured by emitting infrared light from the pixels in the region 408 and detecting the infrared light that enters the display unit 404. FIG. 19B shows the pixels in the region 408 being lit. In FIG. 19B, the finger 406 is shown as a transparent image, with only the outline indicated by a dashed line, and the region 408 is hatched. As shown in FIG. 19B, the lit region 408 is hidden by the finger 406 and is difficult for the user to see. This allows oxygen saturation to be measured without causing stress to the user. The mobile information terminal 400 can also measure oxygen saturation at any position within the display unit 404.

[0149] The obtained oxygen saturation level may be displayed on display unit 404. FIG. 19C shows an image 409 indicating the oxygen saturation level displayed in area 407. In FIG. 19C, the text "SpO2 97%" is shown as an example of image 409. Note that image 409 may be an image or may include an image and text. Furthermore, area 407 may be provided at any position on display unit 404.

[0150] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0151] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention and a manufacturing method thereof will be described with reference to FIGS.

[0152] When manufacturing a display device having a light-emitting device and a light-receiving device, it is necessary to form the light-emitting layer and the active layer in an island shape.

[0153] For example, island-shaped light-emitting layers and active layers can be formed by vacuum deposition using a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers and active layers due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition displays and high aperture ratios.

[0154] In a manufacturing method of a display device according to one embodiment of the present invention, an island-shaped pixel electrode (which can also be referred to as a lower electrode) is formed, a first layer to be an EL layer is formed over the entire surface, and then a first mask layer is formed on the first layer. Then, a first resist mask is formed on the first mask layer, and the first layer and the first mask layer are processed using the first resist mask to form the island-shaped EL layer. Similarly, a second layer to be an emission layer is formed using a second mask layer and a second resist mask.

[0155] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped EL layer is not formed by a metal mask pattern but by forming a layer to be the EL layer on the entire surface and then processing it. Similarly, the island-shaped light-receiving layer is not formed by a metal mask pattern but by forming a layer to be the light-receiving layer on the entire surface and then processing it. Therefore, it is possible to realize a high-resolution display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be formed separately for each color, a display device with extremely vivid images, high contrast, and high display quality can be realized. Furthermore, a light-receiving device can be provided in each pixel, thereby realizing a display device having a high-resolution imaging function and a sensing function such as a touch sensor or near-touch sensor. Furthermore, by providing mask layers on the EL layer and the light-receiving layer, damage to the EL layer and the light-receiving layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device and the light-receiving device.

[0156] For example, it is difficult to achieve a spacing of less than 10 μm between adjacent light-emitting devices and light-receiving devices using a metal mask. However, the above method can narrow the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using an exposure device for LSIs, for example, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This allows the area of ​​the light-emitting region (hereinafter also referred to as the light-emitting area) and the light-receiving area in the pixel to be increased, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0157] The patterns of the EL layer and the light-receiving layer themselves can also be made much smaller than when a metal mask is used. For example, when a metal mask is used to separately form the EL layer and the light-receiving layer, thickness variations occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as the light-emitting region or the light-receiving region compared to the overall area of ​​the pattern. On the other hand, with the above-mentioned manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as the light-emitting region or the light-receiving region. This makes it possible to manufacture a display device that combines high definition and a high aperture ratio.

[0158] <Example of display device configuration> A display device according to one embodiment of the present invention is shown in FIGS. 20A and 20B.

[0159] 20A is a top view of the display device 100. The display device 100 has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 on the outside of the display section.

[0160] A stripe arrangement is applied to the pixel 110 shown in FIG. 20A. The pixel 110 shown in FIG. 20A is composed of four subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. The subpixels 110a, 110b, and 110c each have a light-emitting device that emits light in a different wavelength region. The light-emitting devices can be the above-mentioned light-emitting devices. The subpixels 110a, 110b, and 110c can be subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The subpixel 110d has a light-receiving device. The light-receiving device can be the above-mentioned light-receiving device.

[0161] 20A shows an example in which the sub-pixels are arranged side by side in the X direction, and sub-pixels of the same type are arranged side by side in the Y direction. Note that different types of sub-pixels may be arranged side by side in the Y direction, and sub-pixels of the same type may be arranged side by side in the X direction.

[0162] 20A shows an example in which the connection unit 140 is located below the display unit when viewed from above, but this is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround all four sides of the display unit. Furthermore, the connection unit 140 may be singular or plural.

[0163] A cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 20A is shown in FIG. 20B.

[0164] 20B, display device 100 includes light-emitting device 130a, light-emitting device 130b, light-emitting device 130c, and light-receiving device 130d provided on layer 101 including transistors. Furthermore, protective layers 131 and 132 are provided to cover these light-emitting devices and light-receiving devices. Substrate 120 is bonded to protective layer 132 with resin layer 122. Furthermore, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the regions between adjacent light-emitting devices and light-receiving devices.

[0165] The display device of one embodiment of the present invention may be any of a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual-emission type that emits light from both sides.

[0166] The transistor-containing layer 101 may have a laminated structure in which, for example, a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have a recess between adjacent light-emitting devices. For example, a recess may be provided in an insulating layer located on the outermost surface of the transistor-containing layer 101.

[0167] The light emitting devices 130a, 130b, and 130c each emit light in a different wavelength range, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0168] The light-emitting device 130a has a pixel electrode 111a on the transistor-containing layer 101, an island-shaped EL layer 113a on the pixel electrode 111a, a common layer 114 on the island-shaped EL layer 113a, and a common electrode 115 on the common layer 114.

[0169] The light-emitting device 130b has a pixel electrode 111b on the layer 101 including transistors, an island-shaped EL layer 113b on the pixel electrode 111b, a common layer 114 on the island-shaped EL layer 113b, and a common electrode 115 on the common layer 114.

[0170] The light-emitting device 130c has a pixel electrode 111c on the transistor-containing layer 101, an island-shaped EL layer 113c on the pixel electrode 111c, a common layer 114 on the island-shaped EL layer 113c, and a common electrode 115 on the common layer 114.

[0171] The light receiving device 130d has a pixel electrode 111d on the layer 101 including transistors, an island-shaped light receiving layer 113d on the pixel electrode 111d, a common layer 114 on the island-shaped light receiving layer 113d, and a common electrode 115 on the common layer 114.

[0172] The light-emitting devices and light-receiving devices of each color share the same film as a common electrode. The common electrode is electrically connected to a conductive layer provided in the connection portion 140. This allows the same potential to be supplied to the common electrodes of the light-emitting devices and light-receiving devices of each color.

[0173] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device and the light-receiving device can be appropriately made of metals, alloys, electrically conductive compounds, and mixtures thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, alloys containing aluminum (aluminum alloys) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of usable materials include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these metals in combination. Other examples include rare earth metals such as elements belonging to Groups 1 and 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), europium (Eu), and ytterbium (Yb), as well as alloys containing these metals in combination, graphene, and the like.

[0174] A light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0175] The semi-transmitting / semi-reflective electrode can have a laminated structure of an electrode that is reflective to visible light and an electrode that is transparent to visible light (also called a transparent electrode).

[0176] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 When the light-emitting device emits infrared light, the transmittance or reflectance of these electrodes for infrared light preferably satisfies the above-mentioned numerical range, similar to the transmittance or reflectance for visible light.

[0177] The EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d are each provided in an island shape. The EL layer 113a, the EL layer 113b, and the EL layer 113c each have an emission layer. It is preferable that the EL layer 113a, the EL layer 113b, and the EL layer 113c each have an emission layer that emits light in a different wavelength region. The light-receiving layer 113d has an active layer.

[0178] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits infrared light can also be used as the light-emitting substance.

[0179] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0180] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0181] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0182] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or more organic compounds may be a hole-transporting material or an electron-transporting material, or both. Alternatively, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0183] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0184] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0185] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and the mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and the mixed film of these materials and observing differences in transient response.

[0186] The EL layer 113a, the EL layer 113b, and the EL layer 113c may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), as a layer other than the light-emitting layer.

[0187] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0188] For example, the EL layer 113a, the EL layer 113b, and the EL layer 113c may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0189] The EL layer may include one or more layers common to all colors, such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the common layer 114. All layers of the EL layer may be formed separately for each color. In other words, the EL layer does not need to include a layer common to all colors.

[0190] Each of the EL layers 113a, 113b, and 113c preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device 100, reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0191] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0192] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0193] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0194] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0195] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x The electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0196] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0197] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) level of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0198] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino<2,3-a:2',3'-c>phenazine (abbreviated as HATNA), and 2,4,6-tris<3'-(pyridin-3-yl)biphenyl-3-yl>-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0199] When fabricating a tandem-structure light-emitting device, an intermediate layer is placed between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0200] For example, a material applicable to an electron injection layer, such as lithium, can be suitably used for the intermediate layer. For example, a material applicable to a hole injection layer can be suitably used for the intermediate layer. For example, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be used for the intermediate layer. For example, a layer containing an electron transport material and a donor material can be used for the intermediate layer. By forming an intermediate layer having such a layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0201] The active layer includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because the manufacturing equipment can be shared.

[0202] The active layer is made of n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads across a plane, as in benzene, the electron-donating (donor) properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60It is preferable because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region compared to [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0203] Examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI) and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0204] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0205] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0206] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0207] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0208] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0209] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0210] The light-emitting device and the light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device and the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), a transfer method, a printing method, an inkjet method, or a coating method.

[0211] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole-transporting materials, and inorganic compounds such as zinc oxide (ZnO) can be used as electron-transporting materials.

[0212] The active layer can be made of a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0213] The active layer may contain a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0214] The side surfaces of the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d are covered with the insulating layer 125 and the insulating layer 127. This prevents the common layer 114 (or the common electrode 115) from coming into contact with any of the side surfaces of the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111c, the pixel electrode 111d, the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, thereby preventing short-circuiting between the light-emitting device and the light-receiving device.

[0215] The insulating layer 125 preferably covers the side surfaces of at least the pixel electrodes 111a, 111b, 111c, and 111d. Furthermore, the insulating layer 125 preferably covers the side surfaces of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d. The insulating layer 125 may be configured to be in contact with the side surfaces of each of the pixel electrodes 111a, 111b, 111c, 111d, EL layers 113a, 113b, 113c, and the light-receiving layer 113d.

[0216] The insulating layer 127 is provided on the insulating layer 125 so as to fill recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with the side surfaces of the pixel electrodes 111a, 111b, 111c, 111d, the EL layers 113a, 113b, 113c, and the light-receiving layer 113d, with the insulating layer 125 interposed therebetween.

[0217] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. For example, when the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. The insulating layer 127 can be provided on the layer 101 so as to fill the gap between the EL layer of the light-emitting device and the light-receiving layer of the light-receiving device.

[0218] The common layer 114 and the common electrode 115 are provided on the EL layer 113a, the EL layer 113b, the EL layer 113c, the light-receiving layer 113d, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step exists between a region where the pixel electrode is provided and a region where the pixel electrode is not provided (a region between the light-emitting device and the light-receiving device). In the display device of one embodiment of the present invention, the insulating layer 125 and the insulating layer 127 can flatten the step, thereby improving the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to a step in the common electrode 115 can be suppressed. Alternatively, an increase in electrical resistance caused by a local thinning of the common electrode 115 due to the step can be suppressed.

[0219] In order to improve the flatness of the surfaces on which the common layer 114 and the common electrode 115 are formed, it is preferable that the heights of the upper surfaces of the insulating layers 125 and 127 are the same or approximately the same as the height of the upper surface of at least one of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d. The upper surface of the insulating layer 127 preferably has a flat shape, and may have protrusions or recesses.

[0220] The insulating layer 125 has regions in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, and functions as a protective insulating layer for the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. Providing the insulating layer 125 can prevent impurities (oxygen, moisture, etc.) from entering the interior from the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, thereby providing a highly reliable display device.

[0221] If the width (thickness) of the insulating layer 125 in the region in contact with the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d is large in cross section, the distance between the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d will increase, which may result in a low aperture ratio. Also, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing impurities from entering the interior from the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d may be reduced.

[0222] The width (thickness) of insulating layer 125 in the region in contact with the side surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, even more preferably 5 nm to 150 nm, even more preferably 5 nm to 100 nm, even more preferably 10 nm to 100 nm, and even more preferably 10 nm to 50 nm. By setting the width (thickness) of insulating layer 125 within the above range, a display device having a high aperture ratio and high reliability can be obtained.

[0223] The insulating layer 125 can include an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure.

[0224] The insulating layer 125 can be formed by sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), atomic layer deposition (ALD), or the like. The insulating layer 125 is preferably formed by the ALD method, which has good coating properties. The ALD method is preferably used because it causes little film formation damage to the surface on which it is formed.

[0225] Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. Aluminum oxide is particularly preferred because it has a high etching selectivity with respect to the EL layer and protects the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, hafnium oxide film, or silicon oxide film formed by an ALD method as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the EL layer.

[0226] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0227] The insulating layer 127 provided on the insulating layer 125 has the function of flattening recesses formed in the insulating layer 125 between adjacent light-emitting devices. In other words, the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the photosensitive resin. A photoresist can be used as the photosensitive resin. A positive-type material or a negative-type material can be used as the photosensitive resin.

[0228] The difference in height between the upper surface of the insulating layer 127 and the upper surface of any one of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of any one of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d is higher than the upper surface of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of the insulating layer 127 is higher than the upper surfaces of the light-emitting layers of the EL layers 113a, 113b, and 113c, and higher than the upper surface of the active layer of the light-receiving layer 113d.

[0229] It is preferable to provide protective layers 131 and 132 on the light-emitting devices 130a, 130b, 130c, and 130d, respectively. By providing the protective layers 131 and 132, the reliability of the light-emitting devices and the light-receiving devices can be improved.

[0230] There is no limitation on the conductivity of the protective layer 131 and the protective layer 132. The protective layer 131 and the protective layer 132 can be formed using at least one of an insulating film, a semiconductor film, and a conductive film.

[0231] The protective layer 131 and the protective layer 132 have an inorganic film, which prevents oxidation of the common electrode 115 and suppresses impurities (moisture, oxygen, etc.) from entering the light-emitting device 130a, the light-emitting device 130b, the light-emitting device 130c, and the light-receiving device 130d, thereby suppressing deterioration of the light-emitting devices and the light-receiving devices and improving the reliability of the display device.

[0232] The protective layer 131 and the protective layer 132 can be formed using, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film. Examples of the insulating oxide film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the oxynitride insulating film include a silicon oxynitride film and an aluminum oxynitride film. Examples of the nitride oxide insulating film include a silicon nitride oxide film and an aluminum nitride oxide film.

[0233] Each of the protective layers 131 and 132 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0234] The protective layer 131 and the protective layer 132 may be formed using an inorganic film containing In-Sn oxide (also referred to as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0235] When light is emitted from the light-emitting device and incident on the light-receiving device via the protective layers 131 and 132, it is preferable that the protective layers 131 and 132 have high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0236] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film, can be used for the protective layer 131 and the protective layer 132. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0237] Furthermore, the protective layer 131 and the protective layer 132 may include an organic film. For example, the protective layer 132 may include both an organic film and an inorganic film.

[0238] Different film formation methods may be used for the protective layer 131 and the protective layer 132. Specifically, the protective layer 131 may be formed by the ALD method, and the protective layer 132 may be formed by the sputtering method.

[0239] The upper end portions of the pixel electrodes 111a, 111b, 111c, and 111d are not covered with an insulating layer. This allows the distance between adjacent light-emitting devices and light-receiving devices to be extremely narrow. This allows for a high-definition or high-resolution display device.

[0240] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0241] In this specification and the like, a structure in which different light-emitting layers are fabricated or painted separately for each color light-emitting device (here, blue (B), green (G), and red (R)) is sometimes referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom of material and configuration selection and making it easier to improve brightness and reliability.

[0242] In this specification and the like, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. Note that a white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0243] Here, light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the light emitted from the first light-emitting layer and the light emitted from the second light-emitting layer complementary to each other, a configuration in which the light-emitting device as a whole emits white light can be obtained. Furthermore, in the case of a light-emitting device having three or more light-emitting layers, the light-emitting colors of the respective light-emitting layers can be mixed to emit white light.

[0244] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0245] When comparing the above-mentioned white light-emitting devices (single structure or tandem structure) with light-emitting devices with SBS structure, the light-emitting devices with SBS structure can reduce power consumption compared to white light-emitting devices. If you want to keep power consumption low, it is preferable to use a light-emitting device with SBS structure. On the other hand, the manufacturing process of white light-emitting devices is simpler than that of light-emitting devices with SBS structure, so they are preferable because they can reduce manufacturing costs or increase manufacturing yields.

[0246] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of EL layer 113a and the side surface of EL layer 113b or the distance between the side surface of EL layer 113b and the side surface of EL layer 113c has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0247] Similarly, the display device of this embodiment can narrow the distance between light-receiving devices. Specifically, the distance between light-receiving devices, the distance between light-receiving layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, there is a region where the distance between the side surface of one light-receiving layer and the side surface of an adjacent light-receiving layer is 1 μm or less, preferably 0.5 μm (500 nm) or less, and more preferably 100 nm or less.

[0248] The display device of this embodiment can reduce the distance between the light-emitting device and the light-receiving device. Specifically, the distance between the light-emitting device and the light-receiving device, the distance between the EL layer and the light-receiving layer, or the distance between the pixel electrodes can be less than 20 μm, 10 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of EL layer 113a and the side surface of light-receiving layer 113d, the distance between the side surface of EL layer 113b and the side surface of light-receiving layer 113d, or the distance between the side surface of EL layer 113c and the side surface of light-receiving layer 113d has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0249] A light-shielding layer may be provided on the surface of substrate 120 facing resin layer 122. Various optical members may be disposed on the outside of substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of substrate 120 may also be provided with an anti-static film that prevents dust from adhering, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that prevents scratches from occurring during use, an impact absorbing layer, etc.

[0250] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0251] The substrate 120 may be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 may be made of glass having a thickness sufficient to provide flexibility.

[0252] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0253] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0254] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic resin films.

[0255] When a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0256] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0257] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0258] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0259] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0260] Note that a display device according to one embodiment of the present invention can have a structure including an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can provide a display with extremely low light leakage during black display (also referred to as true black display).

[0261] <Pixel layout> The pixel layout will now be described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0262] Examples of the top surface shape of the subpixel include a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of a light-emitting device or the light-receiving region of a light-receiving device.

[0263] The pixels 110 shown in FIGS. 21A to 21C are arranged in a stripe pattern.

[0264] 21A to 21C , a display portion of a display device according to one embodiment of the present invention includes a plurality of pixels arranged in a matrix in the row and column directions. The display portion employing the pixel layouts shown in FIGS. 21A to 21C includes a first array in which subpixels 110a, 110b, 110c, and 110d are repeatedly arranged in this order in the row direction. Furthermore, the first array is repeatedly arranged in the column direction.

[0265] The display unit has a second array in which subpixels 110a are repeatedly arranged in the column direction, a third array in which subpixels 110b are repeatedly arranged in the column direction, a fourth array in which subpixels 110c are repeatedly arranged in the column direction, and a fifth array in which subpixels 110d are repeatedly arranged in the column direction. Furthermore, the second array, third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0266] In the present embodiment and the like, the horizontal direction of the drawings is defined as the row direction and the vertical direction as the column direction in order to clearly explain the pixel layout. However, this is not limited to this, and the row direction and the column direction can be interchanged. Therefore, in this specification and the like, one of the row direction and the column direction may be referred to as the first direction, and the other of the row direction and the column direction may be referred to as the second direction. The second direction is perpendicular to the first direction. Note that, when the top surface shape of the display unit is rectangular, the first direction and the second direction do not have to be parallel to the straight line portions of the outline of the display unit. Furthermore, the top surface shape of the display unit is not limited to a rectangle and may be a polygon or a curved shape (e.g., a circle, an ellipse), and the first direction and the second direction may be any direction relative to the display unit.

[0267] In the present embodiment and the like, in order to explain the pixel layout in an easy-to-understand manner, the order of the sub-pixels is shown from the left of the drawing, but this is not limited to this and can be changed to the order from the right. Similarly, the order of the sub-pixels is shown from the top of the drawing, but this is not limited to this and can be changed to the order from the bottom.

[0268] In this specification and the like, "repeatedly arranged" means that the minimum unit of the order of sub-pixels is arranged two or more times.

[0269] FIG. 21A shows an example in which each subpixel has a rectangular top surface shape, FIG. 21B shows an example in which each subpixel has a top surface shape that combines two semicircles and a rectangle, and FIG. 21C shows an example in which each subpixel has an elliptical top surface shape.

[0270] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0271] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer or the light-receiving layer is processed into an island shape using a resist mask. The resist film formed on the EL layer or the light-receiving layer needs to be cured at a temperature lower than the heat-resistant temperature of the EL layer or the light-receiving layer. Therefore, depending on the heat-resistant temperature of the material for the EL layer, the heat-resistant temperature of the material for the light-receiving layer, and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape different from the desired shape during processing. As a result, the top surface shape of the EL layer or the light-receiving layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer or the light-receiving layer.

[0272] In order to form the desired top surface shapes of the EL layer and the absorption layer, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern matches the transfer pattern. Specifically, OPC technique adds correction patterns to the corners of the figures on the mask pattern.

[0273] The pixels 110 shown in FIGS. 21D to 21F are arranged in a matrix.

[0274] 21D to 21F, the display portion of the display device employs a first array in which subpixels 110a and 110b are alternately arranged in the row direction, and a second array in which subpixels 110c and 110d are alternately arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in this order in the column direction.

[0275] The display unit has a third array in which subpixels 110a and 110c are alternately arranged in the column direction, and a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction. Furthermore, the third array and the fourth array are alternately arranged in the row direction.

[0276] FIG. 21D is an example in which each subpixel has a square top surface shape, FIG. 21E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and FIG. 21F is an example in which each subpixel has a circular top surface shape.

[0277] 21G shows an example in which one pixel 110 is configured with two rows and three columns. The pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, the pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0278] As shown in Figure 21G, the subpixels may have different sizes. Figure 21G shows a configuration in which subpixel 110d is larger than subpixels 110a to 110c. Figure 21H shows a configuration in which subpixels 110b and 110c are larger than subpixel 110a, and subpixel 110a is larger than subpixel 110d. The pixel 110 shown in Figure 21H has two subpixels (subpixels 110a and 110d) in the left column (first column), subpixel 110b in the center column (second column), and subpixel 110c in the right column (third column).

[0279] 21G has a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0280] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array in which subpixels 110c and 110d are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0281] 21H , the display section of the display device employs a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d, 110b, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0282] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b are repeatedly arranged in the column direction, and a fifth array in which subpixels 110c are repeatedly arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0283] 21I shows an example in which one pixel 110 is arranged in two rows and three columns. The pixel 110 has subpixels 110a, 110b, 110c, and three subpixels 110d. The pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels (three subpixels 110d) in the bottom row (second row). In other words, the pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (first column), two subpixels (subpixels 110b and 110d) in the center column (second column), and two subpixels (subpixels 110c and 110d) in the right column (third column).

[0284] 21I, the display section of the display device employs a first array in which subpixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which subpixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in the column direction.

[0285] The display unit has a third array in which subpixels 110a and 110d are alternately arranged in the column direction, a fourth array in which subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array in which subpixels 110c and 110d are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0286] 21A to 21I, the pixel 110 is composed of four subpixels: 110a, 110b, 110c, and 110d. The subpixels 110a, 110b, 110c, and 110d each have a light-emitting device or a light-receiving device that emits light in a different wavelength region. For example, as shown in FIGS. 22A to 22E, the subpixel 110a can be a subpixel (R) that emits red light, the subpixel 110b can be a subpixel (G) that emits green light, the subpixel 110c can be a subpixel (B) that emits blue light, and the subpixel 110d can be a subpixel (PS) that receives light.

[0287] 22A has a first array in which subpixels (R), (G), (B), and (PS) are repeatedly arranged in this order in the row direction, and further has the first array repeatedly arranged in the column direction.

[0288] The display unit has a second array in which sub-pixels (R) are repeatedly arranged in the column direction, a third array in which sub-pixels (G) are repeatedly arranged in the column direction, a fourth array in which sub-pixels (B) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (PS) are repeatedly arranged in the column direction. Furthermore, the second array, third array, fourth array, and fifth array are repeatedly arranged in this order in the row direction.

[0289] 22B is applied to a display unit having a first array in which subpixels (R) and (G) are alternately arranged in the row direction, and a second array in which subpixels (B) and (PS) are alternately arranged in the row direction. Furthermore, the first array and the second array are alternately arranged in this order in the column direction.

[0290] The display unit has a third array in which sub-pixels (R) and sub-pixels (B) are alternately arranged in the column direction, and a fourth array in which sub-pixels (G) and sub-pixels (PS) are alternately arranged in the column direction, and the third array and the fourth array are alternately arranged in the row direction.

[0291] The display unit of the display device to which the pixel layout shown in FIG. 22C is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a second array in which sub-pixels (PS) are repeatedly arranged in the row direction. Further, in the column direction, the first array and the second array are repeatedly arranged alternately.

[0292] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are repeatedly arranged alternately in the column direction, a fourth array in which sub-pixels (G) and sub-pixels (PS) are repeatedly arranged alternately in the column direction, and a fifth array in which sub-pixels (B) and sub-pixels (PS) are repeatedly arranged alternately in the column direction. Further, in the row direction, the third array, the fourth array, and the fifth array are repeatedly arranged in this order.

[0293] The display unit of the display device to which the pixel layout shown in FIG. 22D is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a second array in which sub-pixels (PS), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction. Further, in the column direction, the first array and the second array are repeatedly arranged alternately.

[0294] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are repeatedly arranged alternately in the column direction, a fourth array in which sub-pixels (G) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (B) are repeatedly arranged in the column direction. Further, in the row direction, the third array, the fourth array, and the fifth array are repeatedly arranged in this order.

[0295] The display unit of the display device to which the pixel layout shown in FIG. 22E is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a second array in which sub-pixels (PS) are repeatedly arranged in the row direction. Further, in the column direction, the first array and the second array are repeatedly arranged alternately.

[0296] The display unit has a third array in which subpixels (R) and subpixels (PS) are alternately arranged in the column direction, a fourth array in which subpixels (G) and subpixels (PS) are alternately arranged in the column direction, and a fifth array in which subpixels (B) and subpixels (PS) are alternately arranged in the column direction. Furthermore, the third array, fourth array, and fifth array are alternately arranged in this order in the row direction.

[0297] The light-emitting areas of the subpixels (R), (G), and (B) having light-emitting devices may be the same or different. For example, the light-emitting areas of the subpixels having light-emitting devices can be determined depending on the lifetime of the light-emitting devices. It is preferable to make the light-emitting area of ​​the subpixel having a light-emitting device with a short lifetime larger than the light-emitting areas of the other subpixels.

[0298] 22D shows an example in which the light-emitting areas of the subpixels (G) and (B) are larger than that of the subpixel (R). This configuration is suitable for use when the lifespan of the light-emitting device that emits green light and the light-emitting device that emits blue light is shorter than that of the light-emitting device that emits red light. In the subpixels (G) and (B) with larger light-emitting areas, the current density applied to the light-emitting device that emits green light and the light-emitting device that emits blue light of each subpixel is lower, thereby extending the lifespan of the light-emitting devices. In other words, a highly reliable display device can be obtained.

[0299] Examples of pixel layouts that differ from those shown in FIGS. 21A to 21I and 22A to 22E are shown in FIGS. 23A and 23B.

[0300] 23A shows four pixels, with adjacent pixels 110A and 110B having different subpixels. Pixel 110A has three subpixels: subpixel 110a, subpixel 110b, and subpixel 110d. Pixel 110B, adjacent to pixel 110A, has subpixels 110b, 110c, and 110d. That is, pixels 110A including subpixel 110a and pixels 110B not including subpixel 110a are alternately arranged in the column and row directions. Similarly, pixels 110A not including subpixel 110c and pixels 110B including subpixel 110c are alternately arranged in the column and row directions.

[0301] Pixel 110A is configured with two rows and two columns, and has two subpixels (subpixels 110b and 110d) in the left column (first column) and one subpixel (subpixel 110a) in the right column (second column). In other words, pixel 110A has two subpixels (subpixels 110a and 110b) in the top row (first row) and two subpixels (subpixels 110a and 110d) in the bottom row (second row), with subpixels 110a spanning these two rows.

[0302] Pixel 110B is configured with two rows and two columns, and has two subpixels (subpixels 110b and 110d) in the left column (first column) and one subpixel (subpixel 110c) in the right column (second column). In other words, pixel 110A has two subpixels (subpixels 110b and 110c) in the top row (first row) and two subpixels (subpixels 110c and 110d) in the bottom row (second row), with subpixel 110c spanning these two rows.

[0303] The pixel shown in FIG. 23A has two pixels, pixel 110A and pixel 110B, each with four subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. The two pixels, pixel 110A and pixel 110B, each have one subpixel 110a, two subpixels 110b, one subpixel 110c, and two subpixels 110d. This configuration allows the area of ​​the subpixels to be increased while maintaining a pseudo-high resolution, thereby reducing the required processing accuracy. In other words, compared with the same processing accuracy, it is possible to manufacture a display device with higher resolution. Furthermore, the number of transistors per area can be reduced, thereby improving productivity. Therefore, a pseudo-high-resolution display device can be manufactured with high productivity.

[0304] 23A has a first array ARR1 in which the subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which the subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0305] The display unit has a third array ARR3 in which the subpixels 110b and 110d are alternately arranged in the column direction, and a fourth array ARR4 in which the subpixels 110a and 110c are alternately arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately arranged in the row direction.

[0306] In pixel 110A, it is preferable that subpixel 110a has a larger area than both subpixels 110b and 110d, and in pixel 110B, subpixel 110c has a larger area than both subpixels 110b and 110d. Furthermore, it is preferable that the subpixel with the largest area in pixel 110A (subpixel 110a in this case) is different from the subpixel with the largest area in pixel 110B (subpixel 110c in this case).

[0307] In this specification and the like, the light-emitting area of ​​a sub-pixel having a light-emitting device may be referred to as the area of ​​the sub-pixel. Similarly, the light-receiving area of ​​a sub-pixel having a light-receiving device may be referred to as the area of ​​the sub-pixel.

[0308] In FIG. 23A, the subpixels 110a and 110c are shown with the same area, and the subpixels 110b and 110d are shown with the same area, but this embodiment of the present invention is not limited to this. The areas of the subpixels 110a and 110c may be different. The areas of the subpixels 110b and 110d may also be different. FIG. 23B shows an example in which the area of ​​the subpixel 110b is larger than the area of ​​the subpixel 110d. Note that the areas of the subpixels 110b and 110d may be different between the pixel 110A and the pixel 110B.

[0309] Preferably, the subpixels 110a, 110b, and 110c each have a light-emitting device that emits light in a different wavelength region, and the subpixel 110d has a light-receiving device. For example, as shown in Figures 24A and 24B, the subpixel 110a can be a subpixel (R) that has a function of emitting red light, the subpixel 110b can be a subpixel (G) that has a function of emitting green light, the subpixel 110c can be a subpixel (B) that has a function of emitting blue light, and the subpixel 110d can be a subpixel (PS) that has a light-receiving function.

[0310] One pixel can be composed of two light-emitting devices of three colors, red (R), green (G), and blue (B). A light-receiving device can be provided in any pixel. 24A and 24B show a configuration in which pixel 110A has a sub-pixel (R) that has the function of emitting red light, a sub-pixel (G) that has the function of emitting green light, and a sub-pixel (PS) that has a light-receiving function, and pixel 110B has a sub-pixel (B) that has the function of emitting blue light, a sub-pixel (G) that has the function of emitting green light, and a sub-pixel (PS) that has a light-receiving function.

[0311] 24A and 24B, the display section of the display device employs a first array ARR1 in which subpixels (G), (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels (PS), (R), (PS), and (B) are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0312] The display unit has a third array ARR3 in which sub-pixels (G) and sub-pixels (PS) are alternately arranged in the column direction, and a fourth array ARR4 in which sub-pixels (R) and sub-pixels (B) are alternately arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately arranged in the row direction.

[0313] 24A and 24B show an example in which both pixel 110A and pixel 110B are provided with sub-pixels (PS) having light-receiving devices, but this is not a limitation of one embodiment of the present invention. If high accuracy is not required for the light-receiving function, pixels that do not include sub-pixels (PS) may be provided. In other words, a configuration may be used in which pixels that include sub-pixels (PS) and pixels that do not include sub-pixels (PS) are provided.

[0314] 24A and 24B, the area of ​​the sub-pixel (G) having the function of emitting green light is preferably smaller than the area of ​​the sub-pixel (R) having the function of emitting red light and the area of ​​the sub-pixel (B) having the function of emitting blue light. Because human luminosity is higher for green than for red and blue, making the area of ​​the sub-pixel (G) smaller than the areas of the sub-pixels (R) and (B) can result in a display device that has an excellent balance of red (R), green (G), and blue (B) and high visibility.

[0315] 24A and 24B show a configuration in which the area of ​​the subpixel (G) is smaller than the areas of the subpixels (R) and (B), but this aspect of the present invention is not limited to this. For example, the area of ​​the subpixel (R) may be smaller than the areas of the subpixels (G) and (B). As described above, the area of ​​the subpixels having light-emitting devices may be determined depending on the lifespan of the light-emitting devices of each color.

[0316] A variation of FIG. 23A is shown in FIGS. 25A and 25B.

[0317] 25A has a first array ARR1 in which the subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which the subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0318] The display unit has a third array ARR3 in which the subpixels 110b, 110d, and 110a are repeatedly arranged in this order in the column direction, and a fourth array ARR4 in which the subpixels 110b, 110d, and 110c are repeatedly arranged in this order in the column direction.Furthermore, the third array ARR3, the third array ARR3, the fourth array ARR4, and the fourth array ARR4 are repeatedly arranged in this order in the row direction.

[0319] 25B , the display section of the display device employing the pixel layout shown in FIG. 25B includes a first array ARR1 in which subpixels 110b, 110a, 110d, and 110a are repeatedly arranged in this order in the row direction, a second array ARR2 in which subpixels 110d, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, a third array ARR3 in which subpixels 110b, 110c, 110d, and 110c are repeatedly arranged in this order in the row direction, and a fourth array ARR4 in which subpixels 110d, 110c, 110b, and 110a are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1, second array ARR2, third array ARR3, and fourth array ARR4 are repeatedly arranged in this order in the column direction.

[0320] The display unit has a fifth array ARR5 in which the sub-pixels 110b and 110d are alternately arranged in the column direction, and a sixth array ARR6 in which the sub-pixels 110a and 110c are alternately arranged in the column direction. Furthermore, the fifth array ARR5 and the sixth array ARR6 are alternately arranged in the row direction.

[0321] 26A and 26B show an example configuration in which the subpixel 110a shown in FIGS. 25A and 25B is a subpixel (R) having the function of emitting red light, the subpixel 110b is a subpixel (G) having the function of emitting green light, the subpixel 110c is a subpixel (B) having the function of emitting blue light, and the subpixel 110d is a subpixel (PS) having a light-receiving function.

[0322] 26A has a first array ARR1 in which subpixels (G), (R), (G), and (B) are repeatedly arranged in this order in the row direction, and a second array ARR2 in which subpixels (PS), (R), (PS), and (B) are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0323] The display unit has a third arrangement ARR3 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in this order in the column direction, and a fourth arrangement ARR4 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in this order in the column direction. Further, in the row direction, the third arrangement ARR3, the third arrangement ARR3, the fourth arrangement ARR4, and the fourth arrangement ARR4 are repeatedly arranged in this order.

[0324] The display unit of the display device to which the pixel layout shown in FIG. 26B is applied has a first arrangement ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in this order in the row direction, a second arrangement ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, a third arrangement ARR3 in which sub-pixels (G), sub-pixels (B), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a fourth arrangement ARR4 in which sub-pixels (PS), sub-pixels (B), sub-pixels (G), and sub-pixels (R) are repeatedly arranged in this order in the row direction. Further, in the column direction, the first arrangement ARR1, the second arrangement ARR2, the third arrangement ARR3, and the fourth arrangement ARR4 are repeatedly arranged in this order.

[0325] The display unit has a fifth arrangement ARR5 in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a sixth arrangement ARR6 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction. Further, in the row direction, the fifth arrangement ARR5 and the sixth arrangement ARR6 are alternately and repeatedly arranged. <UNK>0001107<UNK> A modified example of FIG. 26A is shown in FIG. 27A.

[0327] The display section of a display device employing the pixel layout shown in FIG. 27A includes a first array ARR1 in which the subpixels 110b, 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array ARR2 in which the subpixels 110d, 110a, 110d, and 110c are repeatedly arranged in this order in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are alternately arranged in the column direction. The display section may also include a third array ARR3 in which the subpixels 110a and 110c are alternately arranged in the row direction. The pixel layout shown in FIG. 27A may be referred to as a diamond arrangement.

[0328] The display unit has a fourth array ARR4 in which the subpixels 110b and 110d are alternately arranged in the column direction, and a fifth array ARR5 in which the subpixels 110a and 110c are alternately arranged in the column direction. Furthermore, the fourth array ARR4 and the fifth array ARR5 are alternately arranged in the row direction. The display unit may also have a sixth array ARR6 in which the subpixels 110b, 110a, 110d, 110b, 110c, and 110d are alternately arranged in the column direction.

[0329] 27A shows a configuration in which the top surfaces of the subpixels 110a and 110c are rectangular with rounded corners and the top surfaces of the subpixels 110b and 110d are triangular with rounded corners, but the top surface shapes of the subpixels are not particularly limited. For example, the top surfaces of the subpixels 110b and 110d may be rectangular with rounded corners or circular.

[0330] Figure 27B shows an example configuration in which subpixel 110a shown in Figure 27A is a subpixel (R) having the function of emitting red light, subpixel 110b is a subpixel (G) having the function of emitting green light, subpixel 110c is a subpixel (B) having the function of emitting blue light, and subpixel 110d is a subpixel (PS) having a light-receiving function.

[0331] The display unit of the display device to which the pixel layout shown in FIG. 27B is applied has a first arrangement ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in this order in the row direction, and a second arrangement ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in this order in the row direction. The display unit may have a third arrangement ARR3 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the row direction.

[0332] The display unit has a fourth arrangement ARR4 in which sub-pixels (G), sub-pixels (R), sub-pixels (PS), sub-pixels (G), sub-pixels (B), and sub-pixels (PS) are repeatedly arranged in this order in the column direction. The display unit may have a fifth arrangement ARR5 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction, and may have a sixth arrangement ARR6 in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction.

[0333] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when multiple configuration examples are shown within one embodiment, the configuration examples can be appropriately combined.

[0334] <000113​​​​​​​​​​In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) images etc. on a display surface, and therefore the display panel is one aspect of an output device.

[0337] In this specification, a display device having a connector such as a flexible printed circuit (FPC) or a TCP (Tape Carrier Package) attached, or having an integrated circuit (IC) mounted using a COG (Chip On Glass) method or a COF (Chip On Film) method, may be referred to as a display panel module, display module, or simply a display panel.

[0338] <Display device 100A> FIG. 28 shows a perspective view of the display device 100A, and FIG. 29A shows a cross-sectional view of the display device 100A.

[0339] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 28, the substrate 152 is clearly indicated by a dashed line.

[0340] The display device 100A has a display unit 162, a circuit 164, wiring 165, etc. Fig. 28 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Fig. 28 can also be said to be a display module having the display device 100A, an IC (integrated circuit), and an FPC.

[0341] The circuit 164 can be, for example, a scanning line driver circuit.

[0342] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0343] 28 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 173 may be, for example, an IC having a scanning line driving circuit or a signal line driving circuit. The display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0344] FIG. 29A shows an example of a cross section of display device 100A, where a part of the region including FPC 172, a part of circuit 164, a part of display unit 162, and a part of the region including the end portion are cut away.

[0345] The display device 100A has a light-emitting device, a light-receiving device, a transistor 207, a transistor 205, etc. between a substrate 151 and a substrate 152. Fig. 29A shows a light-emitting device 130a that emits red light, a light-emitting device 130b that emits green light, and a light-receiving device 130d as the light-emitting device and the light-receiving device.

[0346] Here, when a pixel of a display device has three types of subpixels having light-emitting devices that emit different colors, the three subpixels include subpixels of three colors R, G, and B, or subpixels of three colors yellow (Y), cyan (C), and magenta (M), etc. When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors R, G, B, and white (W), or subpixels of four colors R, G, B, and Y, etc.

[0347] The light-emitting device 130a and the light-emitting device 130b have an optical adjustment layer between the pixel electrode and the EL layer, and the light-receiving device 130d has an optical adjustment layer between the pixel electrode and the light-receiving layer. As the optical adjustment layer, the light-emitting device 130a has a conductive layer 126a, the light-emitting device 130b has a conductive layer 126b, and the light-receiving device 130d has a conductive layer 126d. For details of the light-emitting devices and the light-receiving devices, refer to Embodiment 1. The side surfaces of the pixel electrode 111a, the pixel electrode 111b, the pixel electrode 111d, the conductive layers 126a, 126b, and 126d, the EL layer 113a, the EL layer 113b, and the light-receiving layer 113d are covered with insulating layers 125 and 127, respectively. A common layer 114 is provided on the EL layer 113a, the EL layer 113b, the light-receiving layer 113d, and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114. In addition, a protective layer 131 is provided on each of the light-emitting device 130a, the light-emitting device 130b, and the light-receiving device 130d. A protective layer 132 is provided on the protective layer 131.

[0348] The protective layer 132 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device. In FIG. 29A, the space between the substrates 152 and 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0349] The pixel electrode 111 a, the pixel electrode 111 b, and the pixel electrode 111 d are connected to the conductive layer 222 b of the transistor 205 through openings provided in the insulating layer 214, respectively.

[0350] Recesses are formed in the pixel electrodes 111a, 111b, and 111d so as to cover the openings formed in the insulating layer 214. The recesses are preferably filled with the layer 128. It is preferable that a conductive layer 126a is formed over the pixel electrode 111a and the layer 128, a conductive layer 126b is formed over the pixel electrode 111b and the layer 128, and a conductive layer 126d is formed over the pixel electrode 111d and the layer 128. The conductive layers 126a, 126b, and 126d can also be referred to as pixel electrodes.

[0351] The layer 128 has the function of planarizing the recesses of the pixel electrodes 111a, 111b, and 111d. By providing the layer 128, the unevenness of the surfaces on which the EL layer and the light-receiving layer are formed can be reduced, improving coverage. Furthermore, by providing the conductive layers 126a, 126b, and 126d electrically connected to the pixel electrodes 111a, 111b, and 111d on the pixel electrodes 111a, 111b, and 111d, respectively, the regions overlapping with the recesses of the pixel electrodes 111a, 111b, and 111d can sometimes be used as light-emitting regions. This can increase the aperture ratio of the pixel.

[0352] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material.

[0353] An insulating layer containing an organic material can be suitably used as the layer 128. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, or the like can be used as the layer 128. Alternatively, a photosensitive resin can be used as the layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0354] By using a photosensitive resin, the layer 128 can be formed only by exposure and development steps, and the influence of dry etching, wet etching, etc. on the surfaces of the pixel electrodes 111a, 111b, and 111d can be reduced. Furthermore, by forming the layer 128 using a negative photosensitive resin, the layer 128 can sometimes be formed using the same photomask (exposure mask) as that used to form the openings in the insulating layer 214.

[0355] The conductive layer 126a is provided on the pixel electrode 111a and the layer 128. The conductive layer 126a has a first region in contact with the upper surface of the pixel electrode 111a and a second region in contact with the upper surface of the layer 128. It is preferable that the height of the upper surface of the pixel electrode 111a in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0356] Similarly, the conductive layer 126b is provided on the pixel electrode 111b and the layer 128. The conductive layer 126b has a first region in contact with the upper surface of the pixel electrode 111b and a second region in contact with the upper surface of the layer 128. It is preferable that the height of the upper surface of the pixel electrode 111b in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0357] The conductive layer 126d is provided on the pixel electrode 111d and the layer 128. The conductive layer 126d has a first region in contact with the upper surface of the pixel electrode 111d and a second region in contact with the upper surface of the layer 128. It is preferable that the height of the upper surface of the pixel electrode 111d in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0358] The pixel electrode includes a material that reflects visible light, and the counter electrode includes a material that transmits visible light.

[0359] The display device 100A is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. It is more preferable that the substrate 152 is made of a material that is highly transparent to visible light and infrared light. Light enters the light-receiving device through the substrate 152.

[0360] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor described in Embodiment 2 and the like.

[0361] The transistor 207 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and in the same process.

[0362] An insulating layer 217, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 217 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0363] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0364] It is preferable to use an inorganic insulating film for each of the insulating layers 217, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0365] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This can prevent impurities from entering from the edge of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 100A, so that the organic insulating film is not exposed at the edge of the display device 100A.

[0366] An organic insulating film is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protection film. This can prevent recesses from being formed in the insulating layer 214 during processing of the pixel electrode 111a, the conductive layer 126a, etc. Alternatively, recesses may be formed in the insulating layer 214 during processing of the pixel electrode 111a, the conductive layer 126a, etc.

[0367] 29A, an opening is formed in insulating layer 214. This makes it possible to prevent impurities from entering display unit 162 from the outside through insulating layer 214, even when an organic insulating film is used for insulating layer 214. This makes it possible to improve the reliability of display device 100A.

[0368] The transistor 207 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 217 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 217 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0369] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0370] The transistors 207 and 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistors. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0371] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0372] The semiconductor layer of the transistor preferably contains metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably uses a transistor using metal oxide in a channel formation region (hereinafter referred to as an OS transistor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0373] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0374] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) for the semiconductor layer. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) may be used for the semiconductor layer. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) may be used for the semiconductor layer.

[0375] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1:2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, or In:M:Zn=4:2:3 or a composition thereabout. or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0376] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3 and the atomic ratio of Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 5 and less than 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and less than 2 and the atomic ratio of Zn is greater than 0.1 and less than 2.

[0377] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types of structures.

[0378] 29B and 29C show other examples of transistor configurations.

[0379] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 217 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 217 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. An insulating layer 218 covering the transistor may also be provided.

[0380] 29B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0381] 29C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 29C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 29C, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0382] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a laminated structure including a conductive film obtained by processing the same conductive film as the pixel electrodes 111a, 111b, and 111d, and a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0383] It is preferable to provide a light-shielding layer 117 on the surface of substrate 152 facing substrate 151. In addition, various optical members can be arranged on the outside of substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outside of substrate 152.

[0384] By providing the protective layers 131 and 132 that cover the light emitting device, it is possible to prevent impurities such as water from entering the light emitting device, thereby improving the reliability of the light emitting device.

[0385] In a region 228 near the edge of the display device 100A, it is preferable that the insulating layer 215 and the protective layer 131 or the protective layer 132 contact each other through the opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating films contact each other. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the organic insulating film. This can therefore improve the reliability of the display device 100A.

[0386] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 151 and the substrate 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 151 or the substrate 152.

[0387] Substrates 151 and 152 can be made of polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 151 and 152 may be made of glass having a thickness sufficient to provide flexibility.

[0388] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0389] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0390] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic resin films.

[0391] When a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0392] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0393] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0394] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0395] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0396] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0397] <Display device 100B> 30 is different from the display device 100A mainly in that it is a bottom emission type. Note that a description of the same parts as the display device 100A will be omitted.

[0398] Light emitted by the light-emitting device is emitted toward the substrate 151. The substrate 151 is preferably made of a material that is highly transparent to visible light. It is more preferable that the substrate 151 is made of a material that is highly transparent to visible light and infrared light. On the other hand, the light-transmitting property of the material used for the substrate 152 does not matter. Light enters the light-receiving device through the substrate 151.

[0399] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 207 and between the substrate 151 and the transistor 205. Fig. 30 shows an example in which the light-shielding layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-shielding layer 117, and the transistors 207, 205, etc. are provided over the insulating layer 153.

[0400] This embodiment mode can be combined with other embodiment modes as appropriate.

[0401] (Embodiment 5) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0402] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0403] <Display module> 31A shows a perspective view of display module 280. Display module 280 has display device 100C and FPC 290. Note that the display device included in display module 280 is not limited to display device 100C, and may be display device 100D or display device 100E, which will be described later.

[0404] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0405] 31B is a perspective view schematically showing the configuration on the substrate 291 side. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of a plurality of wirings.

[0406] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of FIG. 31B. The pixel 284a has a light-emitting device 130a, a light-emitting device 130b, a light-emitting device 130c, and a light-receiving device 130d, which emit light of different colors. The light-emitting devices and the light-receiving devices can be arranged in a stripe array as shown in FIG. 31B. Various light-emitting device arrangement methods, such as a delta array or a pentile array, can also be applied.

[0407] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0408] Each pixel circuit 283a is a circuit that controls the emission of light from a light-emitting device and the reception of light from a light-receiving device included in each pixel 284a. For example, if each pixel 284a has three light-emitting devices and one light-receiving device, each pixel circuit 283a is a circuit that controls the emission of the three light-emitting devices and the reception of light from one light-receiving device. Each pixel circuit 283a may be configured to have three circuits that control the emission of one light-emitting device and one circuit that controls the reception of light from one light-receiving device. For example, each pixel circuit 283a may have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active matrix display device. For example, the pixel circuit described in Embodiment 1 can be applied to the pixel circuit 283a.

[0409] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0410] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may also be mounted on the FPC 290.

[0411] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 500 ppi or more, preferably 1000 ppi or more, more preferably 2000 ppi or more, even more preferably 3000 ppi or more, even more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0412] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as head-mounted displays or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0413] <Display device 100C> The display device 100C shown in FIG. 32 includes a substrate 301, a light emitting device 130a, a light emitting device 130b, a light emitting device 130c, a light receiving device 130d, a capacitor 240, and a transistor 310.

[0414] Substrate 301 corresponds to substrate 291 in FIGS. 31A and 31B.

[0415] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311 and functions as an insulating layer.

[0416] An isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0417] An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0418] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 positioned therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0419] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0420] An insulating layer 255a is provided covering the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and light-emitting devices 130a, 130b, 130c, and 130d are provided on the insulating layer 255b. An insulator is provided in the region between adjacent light-emitting elements. For example, in FIG. 32, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in this region.

[0421] A mask layer 118a is located on the EL layer 113a of the light-emitting device 130a, a mask layer 118b is located on the EL layer 113b of the light-emitting device 130b, a mask layer 118c is located on the EL layer 113c of the light-emitting device 130c, and a mask layer 118d is located on the light-receiving layer 113d of the light-receiving device 130d.

[0422] The conductive layer 111a, the conductive layer 111b, the conductive layer 111c, and the conductive layer 111d are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layer 243, the insulating layer 255a, and the insulating layer 255b, the conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255b and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0423] In a display device according to one embodiment of the present invention, a pixel electrode of a light-emitting element has a stacked structure of multiple layers. For example, in the example shown in FIG. 2A, the pixel electrode of the light-emitting device has a stacked structure of conductive layers 111a, 111b, 111c, and 111d and conductive layers 112a, 112b, 112c, and 112d. For example, if the display device 100C is a top-emission type and the pixel electrode of the light-emitting device functions as an anode, the conductive layers 111a, 111b, 111c, and 111d can be layers with a higher visible light reflectivity than the conductive layers 112a, 112b, 112c, and 112d, respectively, and the conductive layers 112a, 112b, 112c, and 112d can be layers with a higher work function than the conductive layers 111a, 111b, 111c, and 111d, respectively. The higher the visible light reflectivity of the pixel electrode, the more effectively the light emitted by the EL layer is prevented from passing through the pixel electrode. Therefore, when the display device 100C is a top-emission type, the light extraction efficiency of the EL layer is increased. Furthermore, when the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the higher the light-emitting efficiency of the EL layer. As described above, by forming the pixel electrode of the light-emitting element into a stacked structure of conductive layers 111a, 111b, 111c, and 111d, which have high reflectivity for visible light, and conductive layers 112a, 112b, 112c, and 112d, which have high work functions, the light-emitting element can have high light extraction efficiency and high luminous efficiency.

[0424] When conductive layers 111a, 111b, 111c, and 111d are layers having a higher visible light reflectivity than conductive layers 112a, 112b, 112c, and 112d, the visible light reflectivity of conductive layers 111a, 111b, 111c, and 111d is preferably, for example, 40% to 100%, or 70% to 100%. Furthermore, conductive layers 112a, 112b, 112c, and 112d can be transparent electrodes, and the visible light transmittance can be, for example, 40% or more.

[0425] The conductive layers 111a, 111b, 111c, and 111d of the light-emitting device are layers that have a high reflectivity for light emitted by the EL layer. For example, if the EL layer emits infrared light, the conductive layers 111a, 111b, 111c, and 111d can be layers that have a high reflectivity for infrared light. Furthermore, if the pixel electrode of the light-emitting device functions as a cathode, the conductive layers 112a, 112b, 112c, and 112d can be layers that have a smaller work function than the conductive layers 111a, 111b, 111c, and 111d.

[0426] On the other hand, when the pixel electrode has a laminated structure of multiple layers, the pixel electrode may be altered due to, for example, a reaction between the multiple layers. For example, in the production of the display device 100C, when a film formed after the formation of the pixel electrode is removed by a wet etching method, a chemical solution may come into contact with the pixel electrode. When the pixel electrode has a laminated structure of multiple layers, galvanic corrosion may occur due to the contact of the multiple layers with the chemical solution. This may cause alteration of at least one of the layers constituting the pixel electrode. This may reduce the yield of the display device and increase the production cost of the display device. Furthermore, the reliability of the display device may be reduced.

[0427] Therefore, in the display device 100C, conductive layers 112a, 112b, 112c, and 112d are formed to cover the upper and side surfaces of conductive layers 111a, 111b, 111c, and 111d. This prevents chemicals from contacting conductive layers 111a, 111b, 111c, and 111d, even when a film formed after forming pixel electrodes including conductive layers 111a, 111b, 111c, and 111d and conductive layers 112a, 112b, 112c, and 112d is removed by wet etching. This prevents galvanic corrosion of the pixel electrodes, for example. Therefore, the display device 100C can be manufactured using a high-yield method, resulting in a low-cost display device. Furthermore, since the occurrence of defects in the display device 100C can be suppressed, the display device 100C can be a highly reliable display device.

[0428] For example, a metal material can be used for the conductive layers 111a, 111b, 111c, and 111d. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing any combination of these metals, can also be used.

[0429] The conductive layers 112a, 112b, 112c, and 112d can be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layers 112a, 112b, 112c, and 112d.

[0430] 32, a mask layer 118a is located on the EL layer 113a of the light-emitting device 130a, a mask layer 118b is located on the EL layer 113b of the light-emitting device 130a, a mask layer 118c is located on the EL layer 113c of the light-emitting device 130c, and a mask layer 118d is located on the light-receiving layer 113d of the light-receiving device 130d. The mask layer 118a is a mask layer that was provided on the upper surface of the EL layer 113a when processing the EL layer 113a, and a mask layer 118d remains. The mask layers 118b, 118c, and 118d are similar to the mask layer 118a. In this way, the display device 100C may have a mask layer that was used to protect the EL layer during its fabrication remaining in part. In the following, the mask layer 118a, the mask layer 118b, the mask layer 118c, and the mask layer 118d may be collectively referred to as the mask layer 118.

[0431] 32, one edge of mask layer 118a is aligned or approximately aligned with an edge of EL layer 113a and an edge of conductive layer 112a. That is, an edge of conductive layer 112a is aligned or approximately aligned with an edge of EL layer 113a. Mask layers 118b, 118c, and 118d are aligned in the same manner as mask layer 118a.

[0432] The other end of mask layer 118a is located on EL layer 113a. Preferably, the other end of mask layer 118a overlaps conductive layer 111a. In this case, the other end of mask layer 118a is easily formed on a substantially flat surface of EL layer 113a. The same applies to mask layers 118b, 118c, and 118d.

[0433] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it is also said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0434] The side surfaces of the EL layer 113R, the EL layer 113G, and the EL layer 113B are covered with the insulating layer 125. The insulating layer 127 overlaps the side surfaces of the EL layer 113R, the EL layer 113G, and the EL layer 113B with the insulating layer 125 interposed therebetween.

[0435] Furthermore, portions of the upper surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d are covered with mask layers 118a, 118b, 118c, and 118d. Insulating layer 125 and insulating layer 127 overlap portions of the upper surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d via mask layers 118a, 118b, 118c, and 118d.

[0436] By covering part of the upper surfaces and side surfaces of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118 (mask layer 118a, mask layer 118b, mask layer 118c, mask layer 118d), the common layer 114 or the common electrode 115 is prevented from contacting the side surfaces of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d, and short circuits in the light-emitting devices 130 (light-emitting devices 130a, 130b, 130c, and 130d) can be prevented. This improves the reliability of the light-emitting devices 130, etc.

[0437] The EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d can have different thicknesses. For example, it is preferable to set the thicknesses of the EL layers 113R, 113G, and 113B according to the optical path lengths that enhance the light emitted by each of the EL layers. This allows a microcavity structure to be realized, and the color purity of the light emitted from the subpixel 110 to be improved.

[0438] The insulating layer 125 preferably contacts the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. This prevents peeling of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d. The insulating layer 125 adheres closely to the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, thereby achieving the effect of fixing or bonding adjacent EL layers 113R and the like by the insulating layer 125. This improves the reliability of the light-emitting device 130. It also improves the manufacturing yield of the light-emitting device.

[0439] 32, the insulating layer 125 and the insulating layer 127 cover part of the top surface and both the side surfaces of the EL layer 113a, the EL layer 113b, the EL layer 113c, and the light-receiving layer 113d, which further prevents the EL layer 113 from peeling off and improves the reliability of the light-emitting device 130. Furthermore, the manufacturing yield of the light-emitting device 130 (the light-emitting devices 130a to 130c and the light-receiving device 130d) can be further improved.

[0440] 32 shows an example in which a stacked structure of an EL layer 113R, a mask layer 118a, an insulating layer 125, and an insulating layer 127 is located on an end of a conductive layer 112R. Similarly, a stacked structure of an EL layer 113b, a mask layer 118b, an insulating layer 125, and an insulating layer 127 is located on an end of a conductive layer 112b, and a stacked structure of an EL layer 113c, a mask layer 118c, an insulating layer 125, and an insulating layer 127 is located on an end of a conductive layer 112c.

[0441] The insulating layer 127 is provided on the insulating layer 125 so as to fill recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap a portion of the top surface and the side surface of each of the EL layers 113a, 113b, 113c, and the light-receiving layer 113d, with the insulating layer 125 interposed therebetween. The insulating layer 127 preferably covers at least a portion of the side surface of the insulating layer 125.

[0442] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces the extreme unevenness of the surface on which layers (such as the carrier injection layer and the common electrode) are formed on the island-shaped layers, thereby making the surface flatter, thereby improving the coverage of the carrier injection layer, the common electrode, and the like.

[0443] Furthermore, a protective layer 131 is provided on the light-emitting devices 130a, 130b, 130c, and 130d. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. For details about the components from the light-emitting devices to the substrate 120, please refer to the above description.

[0444] The insulating layers 255a and 255b can be formed using various inorganic insulating films such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, and an insulating nitride oxide film. The insulating layer 255a is preferably formed using an insulating oxide film or an insulating oxynitride film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or an insulating nitride oxide film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layer 255a is preferably formed using a silicon oxide film, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film. Alternatively, the insulating layer 255a may be formed using a nitride insulating film or a nitride oxide insulating film, and the insulating layer 255b may be formed using an insulating oxide insulating film or an oxynitride insulating film. Although this embodiment illustrates an example in which a recess is provided in the insulating layer 255b, the insulating layer 255b does not necessarily have a recess.

[0445] The pixel electrode of the light-emitting device is electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a and 255b, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255b and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0446] Fig. 33A shows an example in which the side surface of insulating layer 255b (the portion surrounded by a dashed line in Fig. 33A) is vertical in the region overlapping with the end portion of conductive layer 111 (111a to 111d) in Fig. 32. Fig. 33B shows an example in which the top surface of insulating layer 127 has a shape in which the center and its vicinity are recessed in cross section, that is, a shape having a concave curved surface. Furthermore, by configuring insulating layer 127 to have a concave curved surface in the center as shown in Fig. 33B, stress in insulating layer 127 can be alleviated. More specifically, by configuring the insulating layer 127 to have a concave curved surface in the center, local stress occurring at the ends of the insulating layer 127 can be alleviated, and one or more of film peeling between the EL layer 113a and the EL layer 113b and the mask layer 118a and the mask layer 118b, film peeling between the mask layer 118a and the mask layer 118b and the insulating layer 125, and film peeling between the insulating layer 125 and the insulating layer 127 can be suppressed.

[0447] Furthermore, to form a configuration in which the insulating layer 127 has a concave curved surface in the center as shown in FIG. 33B, exposure can be performed using a multi-tone mask (typically a half-tone mask or a gray-tone mask). A multi-tone mask is a mask that can perform three exposure levels on exposed, intermediately exposed, and unexposed portions, and is an exposure mask that transmits light with multiple intensities. It is possible to form the insulating layer 127 with regions of multiple thicknesses (typically two types) using a single photomask (one exposure and development process). Alternatively, to form the insulating layer 127 with a concave curved surface in the center, the line width of the mask located at the concave curved surface can be made smaller than the line width of the exposed portion, thereby forming the insulating layer 127 with regions of multiple thicknesses.

[0448] The method for forming insulating layer 127 with a concave curved surface in the center is not limited to the above. For example, two photomasks may be used to separately form an exposed portion and an intermediately exposed portion. Alternatively, the viscosity of the resin material used for insulating layer 127 may be adjusted. Specifically, the viscosity of the material used for insulating layer 127 may be adjusted to 10 cP or less, preferably 1 cP or more and 5 cP or less.

[0449] 33B, the concave curved surface in the center of insulating layer 127 does not necessarily have to be continuous, and may be interrupted between adjacent light-emitting elements. In this case, a portion of insulating layer 127 disappears in the center of insulating layer 127 shown in FIG. 33B, exposing the surface of insulating layer 125. In this case, the shape of insulating layer 127 should be such that common layer 114 and common electrode 115 can cover insulating layer 127.

[0450] <Display device 100D> 34 differs from the display device 100C mainly in the configuration of the transistors. Note that a description of the same parts as those of the display device 100C may be omitted.

[0451] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0452] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0453] 31A and 31B. The stacked structure from the substrate 331 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0454] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0455] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0456] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor characteristics.

[0457] A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0458] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0459] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 and a conductive layer 324 are buried inside the opening and are in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and the top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0460] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0461] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0462] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0463] In the display device 100D, the configuration from the insulating layer 254 to the substrate 120 is the same as that of the display device 100C.

[0464] <Display device 100E> 35 has a stacked structure of a transistor 310 having a channel formed in a substrate 301 and a transistor 320 having a channel formed in a semiconductor layer containing a metal oxide. Note that descriptions of parts similar to those of the display devices 100C and 100D may be omitted.

[0465] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and a transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0466] The transistor 320 can be used as a transistor included in a pixel circuit. The transistor 310 can be used as a transistor included in a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) for driving the pixel circuit. The transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit or a memory circuit.

[0467] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0468] <Display device 100F> A display device 100F shown in FIG. 36 has a stacked structure of a transistor 310A and a transistor 310B, each of which has a channel formed in a semiconductor substrate.

[0469] The display device 100F has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and each light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0470] The substrate 301B is provided with a plug 343 penetrating the substrate 301B. The plug 343 is electrically connected to a conductive layer 342 provided on the back surface of the substrate 301B (the surface opposite to the substrate 120 side). On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 261.

[0471] By bonding the conductive layer 341 and the conductive layer 342, the substrate 301A and the substrate 301B are electrically connected.

[0472] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows for the application of Cu-Cu direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together). Note that the conductive layers 341 and 342 may be bonded via bumps.

[0473] <Display device 100G> A display device 100G illustrated in FIG. 37 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0474] The transistor 320A, the transistor 320B, and the surrounding configuration can be adapted from the display device 100D.

[0475] Note that although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0476] <Transistor configuration example> An example of a cross-sectional structure of a transistor that can be applied to the display device will be described below.

[0477] FIG. 38A is a cross-sectional view including a transistor 410.

[0478] The transistor 410 is provided over a substrate 401 and has a semiconductor layer made of polycrystalline silicon. For example, the transistor 410 corresponds to the transistor 55B in the pixel circuit 81_2 shown in Fig. 41B. That is, Fig. 38A shows an example in which one of the source and the drain of the transistor 410 is electrically connected to the conductive layer 431 of the light-emitting device.

[0479] The transistor 410 includes a semiconductor layer 411, an insulating layer 412, a conductive layer 413, and the like. The semiconductor layer 411 includes a channel formation region 411i and a low-resistance region 411n. The semiconductor layer 411 includes silicon. The semiconductor layer 411 preferably includes polycrystalline silicon. Part of the insulating layer 412 functions as a gate insulating layer. Part of the conductive layer 413 functions as a gate electrode.

[0480] Note that the semiconductor layer 411 can also include a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor characteristics. In this case, the transistor 410 can be called an OS transistor.

[0481] The low-resistance region 411n is a region containing an impurity element. For example, when the transistor 410 is an n-channel transistor, phosphorus, arsenic, or the like may be added to the low-resistance region 411n. On the other hand, when the transistor 410 is a p-channel transistor, boron, aluminum, or the like may be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of the transistor 410, the above-mentioned impurities may be added to the channel formation region 411i.

[0482] An insulating layer 421 is provided over a substrate 401. A semiconductor layer 411 is provided over the insulating layer 421. An insulating layer 412 is provided to cover the semiconductor layer 411 and the insulating layer 421. A conductive layer 413 is provided over the insulating layer 412 so as to overlap with the semiconductor layer 411.

[0483] An insulating layer 422 is provided to cover the conductive layer 413 and the insulating layer 412. A conductive layer 414a and a conductive layer 414b are provided over the insulating layer 422. The conductive layer 414a and the conductive layer 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 422 and the insulating layer 412. Part of the conductive layer 414a functions as one of the source and drain electrodes, and part of the conductive layer 414b functions as the other of the source and drain electrodes. An insulating layer 423 is provided to cover the conductive layer 414a, the conductive layer 414b, and the insulating layer 422.

[0484] A conductive layer 431 functioning as a pixel electrode is provided over the insulating layer 423. The conductive layer 431 is provided over the insulating layer 423 and is electrically connected to the conductive layer 414b through an opening provided in the insulating layer 423. Although not shown here, an EL layer and a common electrode can be stacked over the conductive layer 431.

[0485] 38B shows a transistor 410a having a pair of gate electrodes, which differs from the transistor 410a shown in FIG. 38A mainly in that a conductive layer 415 and an insulating layer 416 are included.

[0486] The conductive layer 415 is provided over the insulating layer 421. An insulating layer 416 is provided to cover the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided so that at least a channel formation region 411i overlaps with the conductive layer 415 with the insulating layer 416 interposed therebetween.

[0487] 38B, part of the conductive layer 413 functions as a first gate electrode, and part of the conductive layer 415 functions as a second gate electrode. In this case, part of the insulating layer 412 functions as a first gate insulating layer, and part of the insulating layer 416 functions as a second gate insulating layer.

[0488] Here, when the first gate electrode and the second gate electrode are electrically connected, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layers 412 and 416 in a region not shown. When the second gate electrode and the source or drain are electrically connected, the conductive layer 414a or the conductive layer 414b may be electrically connected to the conductive layer 415 through openings provided in the insulating layers 422, 412, and 416 in a region not shown.

[0489] When LTPS transistors are used for all of the transistors constituting the subpixel 81, the transistor 410 illustrated in Fig. 38A or the transistor 410a illustrated in Fig. 38B can be used. In this case, the transistor 410a may be used for all of the transistors constituting the subpixel 81, the transistor 410 may be used for all of the transistors, or the transistor 410a and the transistor 410 may be used in combination.

[0490] An example of a structure including both a transistor in which silicon is used for a semiconductor layer and a transistor in which metal oxide is used for a semiconductor layer will be described below.

[0491] FIG. 38C shows a cross-sectional schematic diagram including transistor 410a and transistor 450.

[0492] The transistor 410a can be the same as in Structure Example 1. Note that although the example using the transistor 410a is described here, a structure including the transistor 410 and the transistor 450 may be used, or a structure including all of the transistors 410, 410a, and 450 may be used.

[0493] The transistor 450 is a transistor in which a metal oxide is used for a semiconductor layer. In the configuration illustrated in Fig. 38C, for example, the transistor 450 corresponds to the transistor 55A in the pixel circuit 81_2, and the transistor 410a corresponds to the transistor 55B. That is, Fig. 38C illustrates an example in which one of the source and the drain of the transistor 410a is electrically connected to the conductive layer 431.

[0494] FIG. 38C shows an example in which transistor 450 has a pair of gates.

[0495] The transistor 450 includes a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, and the like. Part of the conductive layer 453 functions as a first gate of the transistor 450, and part of the conductive layer 455 functions as a second gate of the transistor 450. In this case, part of the insulating layer 452 functions as a first gate insulating layer of the transistor 450, and part of the insulating layer 422 functions as a second gate insulating layer of the transistor 450.

[0496] The conductive layer 455 is provided over the insulating layer 412. The insulating layer 422 is provided to cover the conductive layer 455. The semiconductor layer 451 is provided over the insulating layer 422. The insulating layer 452 is provided to cover the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided over the insulating layer 452 and has a region overlapping with the semiconductor layer 451 and the conductive layer 455.

[0497] An insulating layer 426 is provided to cover the insulating layer 452 and the conductive layer 453. A conductive layer 454a and a conductive layer 454b are provided over the insulating layer 426. The conductive layer 454a and the conductive layer 454b are electrically connected to the semiconductor layer 451 through openings provided in the insulating layer 426 and the insulating layer 452. Part of the conductive layer 454a functions as one of the source and drain electrodes, and part of the conductive layer 454b functions as the other of the source and drain electrodes. An insulating layer 423 is provided to cover the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0498] Here, the conductive layers 414a and 414b electrically connected to the transistor 410a are preferably formed by processing the same conductive film as the conductive layers 454a and 454b. Figure 38C shows a structure in which the conductive layers 414a, 414b, 454a, and 454b are formed on the same surface (i.e., in contact with the top surface of the insulating layer 426) and contain the same metal element. In this case, the conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, the insulating layer 452, the insulating layer 422, and the insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0499] The conductive layer 413 functioning as the first gate electrode of the transistor 410a and the conductive layer 455 functioning as the second gate electrode of the transistor 450 are preferably formed by processing the same conductive film. Figure 38C shows a structure in which the conductive layer 413 and the conductive layer 455 are formed on the same surface (i.e., in contact with the top surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0500] In FIG. 38C, the insulating layer 452 functioning as the first gate insulating layer of the transistor 450 covers the end portion of the semiconductor layer 451. However, as in the transistor 450a shown in FIG. 38D, the insulating layer 452 may be processed so that the top surface shape thereof matches or approximately matches the conductive layer 453.

[0501] In this specification, the phrase "top surface shapes generally match" refers to the overlap of at least a portion of the contours between stacked layers. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes generally match" also applies.

[0502] Note that, although an example in which the transistor 410a corresponds to the transistor 55B and is electrically connected to the pixel electrode has been described here, this is not limiting. For example, the transistor 450 or the transistor 450a may correspond to the transistor 55B. In this case, the transistor 410a corresponds to the transistor 55A, the transistor 55C, or another transistor.

[0503] This embodiment mode can be combined with other embodiment modes as appropriate.

[0504] (Sixth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0505] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0506] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0507] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), AR glasses-type devices, and MR devices.

[0508] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0509] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0510] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0511] Electronic device 6500 shown in FIG. 39A is a portable information terminal that can be used as a smartphone.

[0512] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0513] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0514] FIG. 39B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0515] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0516] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0517] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0518] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0519] 40A shows an example of a television device. A television device 7100 has a display unit 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0520] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0521] 40A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, a touch sensor may be provided in the display unit 7000, and the television 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel provided on the remote control 7111, and the video displayed on the display unit 7000 can be controlled.

[0522] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0523] 40B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display portion 7000 is incorporated in the housing 7211.

[0524] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0525] 40C and 40D show an example of digital signage.

[0526] 40C includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0527] 40D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0528] 40C and 40D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0529] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0530] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, intuitive operation can improve usability.

[0531] 40C and 40D, it is preferable that digital signage 7300 or digital signage 7400 can wirelessly communicate with information terminal 7311 or information terminal 7411, such as a smartphone carried by a user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal 7311 or information terminal 7411. Furthermore, by operating information terminal 7311 or information terminal 7411, the display on display unit 7000 can be switched.

[0532] It is also possible to run a game on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0533] The electronic device shown in Figures 41A to 41F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0534] 41A to 41F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these, and the electronic device may have various other functions. The electronic device may have multiple display units. Furthermore, the electronic device may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on the display unit, etc.

[0535] The electronic devices shown in FIGS. 41A to 41F will be described in detail below.

[0536] FIG. 41A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces thereof. FIG. 41A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and signal strength. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0537] 41B is a perspective view showing mobile information terminal 9102. Mobile information terminal 9102 has a function of displaying information on three or more sides of display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, while carrying mobile information terminal 9102 in a breast pocket of clothes, the user can check information 9053 displayed in a position that can be observed from above mobile information terminal 9102. The user can check the display without taking mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0538] FIG. 41C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with other information terminals and charge itself via a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0539] 41D to 41F are perspective views showing a foldable mobile information terminal 9201. FIG. 41D shows the mobile information terminal 9201 in an unfolded state, FIG. 41F shows it in a folded state, and FIG. 41E is a perspective view showing a state in the process of changing from one of FIG. 41D and FIG. 41F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, allowing for excellent display visibility. A display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0540] This embodiment mode can be combined with other embodiment modes as appropriate.

[0541] <Additional notes regarding the present specification etc.> The above-described embodiments and the respective components in the embodiments will be described below with additional notes.

[0542] The configurations shown in each embodiment can be combined with the configurations shown in other embodiments as appropriate to form one aspect of the present invention. Furthermore, when multiple configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.

[0543] In addition, the content (or even a part of the content) described in one embodiment can be applied to, combined with, or replaced with another content (or even a part of the content) described in that embodiment, and / or with the content (or even a part of the content) described in one or more other embodiments.

[0544] The contents described in the embodiments refer to the contents described in each embodiment using various figures or the contents described using text in the specification.

[0545] Furthermore, a figure (or even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (or even a part thereof) described in that embodiment, and / or a figure (or even a part thereof) described in one or more other embodiments to form even more figures.

[0546] In addition, in the block diagrams in this specification, components are classified by function and shown as independent blocks. However, in actual circuits, it is difficult to separate components by function, and there may be cases where a single circuit is involved in multiple functions, or where a single function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, but may be rephrased appropriately depending on the situation.

[0547] In addition, in the drawings, the size, layer thickness, or region is shown at an arbitrary size for convenience of explanation. Therefore, it is not necessarily limited to the scale. Note that the drawings are shown schematically for clarity, and are not limited to the shapes or values ​​shown in the drawings. For example, it is possible to include variations in signal, voltage, or current due to noise, or variations in signal, voltage, or current due to timing deviations.

[0548] In this specification and the like, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. This is because the source and drain of a transistor vary depending on the structure or operating conditions of the transistor. Note that the source and drain of a transistor can be appropriately referred to as source (drain) terminal, source (drain) electrode, or the like depending on the situation.

[0549] Furthermore, the terms "electrode" and "wiring" used in this specification and elsewhere do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, the terms "electrode" and "wiring" also include cases where multiple "electrodes" and "wirings" are integrally formed.

[0550] Furthermore, in this specification and the like, voltage and potential can be interchanged as appropriate. Voltage refers to the potential difference from a reference potential. For example, if the reference potential is a ground voltage (earth voltage), voltage can be interchanged with potential. Ground potential does not necessarily mean 0 V. Note that potential is relative, and the potential applied to wiring, etc. may change depending on the reference potential.

[0551] In this specification and the like, terms such as "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0552] In this specification, a switch refers to a device that has the function of controlling whether a current flows by being in a conductive state (on state) or a non-conductive state (off state), or a device that has the function of selecting and switching a path for a current to flow.

[0553] In this specification, the channel length refers to, for example, in a top view of a transistor, a region where a semiconductor (or a portion in the semiconductor through which current flows when the transistor is on) and a gate overlap, or a distance between a source and a drain in a region where a channel is formed.

[0554] In this specification, the channel width refers to, for example, the length of the region where the semiconductor (or the portion in the semiconductor through which current flows when the transistor is on) and the gate electrode overlap, or the length of the portion where the source and drain face each other in the region where the channel is formed.

[0555] In this specification, "A and B are connected" includes not only a direct connection between A and B, but also an electrical connection between A and B. Here, "A and B are electrically connected" means that when an object having some kind of electrical effect exists between A and B, it enables the exchange of electrical signals between A and B. [Explanation of symbols]

[0556] 10: display device, 21: timing control circuit, 22: image processor, 23: application processor, 30: drive circuit section, 31: display section drive circuit, 32: sensor section drive circuit, 40: switching section, 41: analog switch, 50: switching section, 51: analog switch, 60: switching section, 61: light-emitting device, 62: light-receiving device, 63: analog switch, 71: display section, 72: signal line drive circuit, 73: gate line drive circuit, 74: control line drive circuit, 75: signal readout circuit, 80: pixel, 81B: sub-pixel, 81G: sub-pixel, 81R: sub-pixel, 82PS: sub-pixel

Claims

1. A display unit and a drive control circuit are included. The display unit a first subpixel having a light-emitting device; a second subpixel having a light receiving device; a first gate line to which a first selection signal for scanning the first subpixel is applied; a second gate line to which a second selection signal for scanning the second subpixel is applied, the light-emitting device has a function of emitting infrared light, the light-receiving device has a function of detecting infrared light, The drive control circuit includes: a gate line driving circuit that switches between the first selection signal and the second selection signal and outputs the signal from a first switching unit; a second switching unit that distributes the first selection signal or the second selection signal output from the gate line driving circuit to the first gate line or the second gate line, and outputs the signal; a timing control circuit that controls the first switching unit and the second switching unit, the timing control circuit has a function of switching between a first operation mode and a second operation mode, In the first operation mode, the gate line driving circuit outputs the first selection signal at a first frame frequency and the second selection signal having a pulse width longer than that of the first selection signal; In the second operation mode, the display device outputs the first selection signal and the second selection signal at a second frame frequency that is lower than the first frame frequency.

2. In claim 1, an image processor; The image processor has a function of switching between the first operation mode and the second operation mode depending on whether the light receiving device detects an object or not.

3. A display module comprising: the display device according to claim 1 or 2; and at least one of a connector and an integrated circuit.

4. An electronic device comprising: the display module according to claim 3; and at least one of a housing, a battery, a camera, a speaker, and a microphone.

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