Semiconductor manufacturing equipment, lighting equipment, method for manufacturing semiconductor equipment, and lighting method

Abstract

The objective is to provide technology that makes it possible to make the size of the die bonder more compact. [Solution] The semiconductor manufacturing apparatus comprises a first imaging device for imaging a first object to be imaged, a second imaging device for imaging a second object to be imaged, an illumination device extending in a first direction and shared by the first imaging device and the second imaging device, a first support portion for supporting the first object to be imaged, and a second support portion that supports the second object to be imaged and is different from the first support portion.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a dicing machine including a plurality of imaging devices.

Background Art

[0002] As one step in the manufacturing process of semiconductor devices, a die divided from a wafer is picked up by a semiconductor manufacturing apparatus (for example, a dicing machine), and the picked-up die is bonded to a substrate. An optical system may be provided in each of the supply unit, the intermediate stage unit, and the bonding unit of the dicing machine. There is a technique for acquiring an image with a plurality of imaging devices by the irradiation light of a plurality of illumination devices in each optical system (for example, Japanese Patent Laid-Open No. 2022-52009).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure aims to provide a technique capable of making the size of a dicing machine compact by an optical system. Other problems and novel features will become apparent from the description of this specification and the attached drawings.

Means for Solving the Problems

[0005] A summary of typical ones of the present disclosure will be briefly described as follows. In other words, the semiconductor manufacturing apparatus comprises a first imaging device for imaging a first object to be imaged, a second imaging device for imaging a second object to be imaged, an illumination device extending in a first direction and shared by the first imaging device and the second imaging device, a first support portion for supporting the first object to be imaged, and a second support portion that supports the second object to be imaged and is different from the first support portion. [Effects of the Invention]

[0006] According to this disclosure, the size of the die bonder can be made more compact by using an optical system. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic top view showing a die bonder in an embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a diagram illustrating the schematic configuration of the optical system as viewed from the direction of arrow B in Figure 1. [Figure 4] Figure 4 is a diagram illustrating the configuration of the lighting device as viewed from the direction of arrow C in Figure 1. [Figure 5] Figure 5 is a block diagram showing the schematic configuration of the die bonder control system shown in Figure 1. [Figure 6] Figure 6 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1. [Figure 7] Figure 7 illustrates an example of light emission from the coaxial lighting device in the wafer supply section of the embodiment, as viewed from the direction of arrow A in Figure 1. [Figure 8] Figure 8 is a diagram illustrating an example of light emission from the coaxial lighting device at the bonding section in the embodiment, as viewed from the direction of arrow A in Figure 1. [Figure 9] Figure 9 illustrates an example of light emission from a coaxial lighting device at the bonding section in the first modified example, viewed from the direction of arrow A in Figure 1. [Figure 10]Figure 10 illustrates an example of light emission from a coaxial lighting device at the bonding section in a second modified example, viewed from the direction of arrow A in Figure 1. [Figure 11] Figure 11 is a diagram illustrating the configuration of the coaxial lighting device as viewed from the direction of arrow G in Figure 10. [Figure 12] Figure 12 illustrates an example of light emission from a coaxial lighting device at the bonding section in a third modified example, viewed from the direction of arrow A in Figure 1. [Figure 13] Figure 13 illustrates an example of light emission from a coaxial lighting device at the bonding section in the fourth modified example, viewed from the direction of arrow A in Figure 1. [Modes for carrying out the invention]

[0008] Embodiments and modified examples will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for identical components, and repeated explanations may be omitted. In addition, to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings. Also, expressions such as "first," "second," etc., are assigned for identification purposes and do not necessarily indicate the order of processes, etc.

[0009] The configuration of a die bonder as one embodiment of semiconductor manufacturing equipment will be explained using Figures 1 and 2. Figure 1 is a schematic top view showing the die bonder in the embodiment. Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1.

[0010] The die bonder 1 is broadly composed of a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-back direction of the die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-and-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side.

[0011] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding stage 12 which is a first support unit for supporting the die D that is the first imaging object, a peeling unit 13, and a wafer recognition camera 14 which is a first imaging device.

[0012] The wafer cassette lifter 11 moves up and down a wafer cassette (not shown) in which a plurality of wafer rings WR are stored to the wafer transfer height. A wafer alignment chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette (not shown) and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette (not shown).

[0013] A wafer W is adhered (stuck) onto a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by the wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the die D is a semiconductor chip or a glass chip. A film-like adhesive material DF called a die attach film (DAF) may be pasted between the wafer W and the dicing tape DT. The adhesive material DF cures by heating.

[0014] The wafer holding stage 12 moves in the X1-X2 direction and the Y1-Y2 direction by a drive unit not shown, and moves the die D to be picked up to the position of the peeling unit 13. Also, the wafer holding stage 12 rotates the wafer ring WR within the XY plane by a drive unit not shown. The peeling unit 13 moves in the vertical direction by a drive unit not shown. The peeling unit 13 peels the die D from the dicing tape DT.

[0015] The wafer recognition camera 14 determines the pickup position of the die D to be picked up from the wafer W and also performs a surface inspection of the die D.

[0016] The pickup unit 20 includes a pickup head 21 and a pickup head table 23. The pickup head 21 is provided with a collet 22 for sucking and holding the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Y1 - Y2 direction and the X1 - X2 direction.

[0017] The intermediate stage unit 30 includes an intermediate stage 31 which is a third support unit for supporting the die D as the third imaging object, and a stage recognition camera 34 which is a third imaging device for recognizing and performing surface inspection on the die D on the intermediate stage 31. This stage recognition camera 34 is arranged between the wafer recognition camera 14 and a substrate recognition camera 44 described later. The intermediate stage 31 has suction holes (not shown) for sucking the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is a placement stage on which the die D is placed and also a pickup stage from which the die D is picked up. Note that the die D of the first imaging object and the third imaging object may be the same or different.

[0018] The bonding unit 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44 which is a second imaging device, and a bond stage 46 which is a second support part that supports a substrate S which is a second object to be imaged. The bond head 41 is provided with a collet 42 that adsorbs and holds a die D at its tip. The bond head table 43 moves the bond head 41 in the Z1-Z2 direction, Y1-Y2 direction, and X1-X2 direction. The bond head table 43 may also rotate the bond head 41. The substrate recognition camera 44 images the substrate S as a second object to be imaged and recognizes the bond position. Here, the substrate S is, for example, a wiring board, a lead frame, a glass substrate, etc. Multiple product areas (hereinafter referred to as package areas P) which are second objects to be imaged, are formed on the substrate S, which will ultimately become a single package. Position recognition marks (not shown) of the package areas P are also formed on the substrate S. The bond stage 46 is raised when the die D is placed on the substrate S, supporting the substrate S from below. The bond stage 46 has suction holes (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 has a heating section (not shown) for heating the substrate S. In addition, the substrate recognition camera 44 can also image the die D bonded to the substrate S as a second object to be imaged.

[0019] Next, the configuration of the die bonder 1, which is part of this embodiment and includes a wafer recognition camera 14, a stage recognition camera 34, a substrate recognition camera 44, and an illumination device, will be described using Figures 2, 3, and 4. Figure 3 is a diagram illustrating the schematic configuration of the optical system as viewed from the direction of arrow B in Figure 1, and Figure 4 is a diagram illustrating the configuration of the illumination device as viewed from the direction of arrow C in Figure 1.

[0020] As shown in Figure 2, for example, the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44 are positioned on the Y-axis. Below these cameras, spaced apart from each camera, a coaxial incident illumination device (hereinafter referred to as coaxial illumination) device 100 is provided, extending in the first direction, the Y-axis direction. Below this coaxial illumination device 100 are a pickup head 21 and a collet 22, and a bond head 41 and a collet 42. In other words, the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44 share the aforementioned coaxial illumination device 100. Furthermore, the wafer recognition camera 14 and the wafer holder 12, the stage recognition camera 34 and the intermediate stage 31, the substrate recognition camera 44 and the bond stage 46, and the coaxial illumination device 100 constitute an inspection apparatus.

[0021] The coaxial illumination device 100 has, for example, point light sources 101 of the same color arranged in an array on a light source substrate 102 and positioned parallel to the die D, between each of the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 and the die D. A semi-transparent mirror (half-mirror, beam splitter) 104 for illuminating the object being imaged perpendicularly is also provided inside the cylinder. This method aligns the optical axis of illumination to the object being imaged with the optical axis of the camera lens. Furthermore, the light-emitting surface 103 and the semi-transparent mirror 104 have a structure that is longer than the distance between the wafer recognition camera 14 and the substrate recognition camera 44.

[0022] Image data of die D captured by the illumination of the wafer recognition camera 14 and the coaxial illumination device 100, image data of die D captured by the illumination of the stage recognition camera 34 and the coaxial illumination device 100, and image data of substrate S or die D placed on substrate S captured by the illumination of the substrate recognition camera 44 and the coaxial illumination device 100 are each registered in the control unit 80.

[0023] The substrate recognition camera 44 is movable in the first direction, Y1-Y2, in order to determine the bonding position of die D. On the other hand, the wafer recognition camera 14 and the stage recognition camera 34 are fixed.

[0024] Here, we will explain the reason and advantages of each camera, which is mounted on the Y-axis in this embodiment, sharing the coaxial illumination device 100.

[0025] When individual coaxial illumination devices are provided in the pickup unit 20, intermediate stage unit 30, and bonding unit 40, an illumination area approximately twice the angle of view of the camera is required to maintain a constant brightness within the field of view. Therefore, a gap must be maintained between adjacent coaxial illumination devices. In addition, the illumination light from each camera diverges outside the field of view as leaked light, which may become ambient light for other nearby optical systems. For these reasons, a certain distance is required in the Y-axis direction, making it impossible to reduce the distance between the pickup unit 20 and the bonding unit 40, i.e., to make the die bonder more compact.

[0026] On the other hand, in the bonding section 40 where the die D is transferred from the intermediate stage section 30, both the substrate recognition camera 44 for recognizing the bonding position on the substrate S and the coaxial illumination device are movable. As a result, fluctuations occur in the illumination area. In order to maintain the illumination area due to these fluctuations, the distance from the intermediate stage section 30 to the bonding section 40 could not be shortened.

[0027] In this embodiment, as shown in Figures 2 and 3, the light-emitting surface 103 of the coaxial illumination device 100 is longer than the distance between the wafer recognition camera 14 and the substrate recognition camera 44, and is also shared in the bonding section 40.

[0028] By sharing this light-emitting surface 103, the irradiation areas of the pickup section 20, the intermediate stage section 30, and the bonding section 40 can be flexibly set, allowing them to cover different irradiation areas. In other words, the light-emitting area can be standardized. As a result, it becomes possible to make the device more compact in the Y1 direction, i.e., in depth, compared to conventional die bonder equipment, leading to a reduction in the equipment footprint and an improvement in equipment utilization rate.

[0029] In this embodiment, a configuration for shortening the distance between the bonding section 40 and the intermediate stage section 30 has been described. In the die bonder 1, a configuration for shortening the distance between the bonding section 40 and the pickup section 20, which has a wafer recognition camera 14 fixed in the same way as the stage recognition camera 34, is also possible.

[0030] With this configuration, the bond head 41 corrects the pickup position and orientation based on the image data from the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it by stacking it on top of a die that has already been bonded onto the package area P of the substrate S.

[0031] The transport unit 50 includes transport claws 51 that grasp and transport the substrate S, and a transport lane 52 on which the substrate S moves. The substrate S moves in the X1 direction by driving nuts (not shown) of the transport claws 51, which are provided on the transport lane 52, with ball screws (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate discharge unit 70 and hands over the substrate S to the substrate discharge unit 70.

[0032] The substrate supply unit 60 takes the substrates S that have been stored in a transport jig (not shown) and supplied to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into a transport jig (not shown).

[0033] Next, the control unit 80 will be explained using Figure 5. Figure 5 is a block diagram showing the schematic configuration of the die bonder control system shown in Figure 1.

[0034] The control system 8 comprises a control unit (control device) 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80 is broadly configured as a computer comprising a control / arithmetic unit 81 mainly composed of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 has a main memory 82a and an auxiliary storage device 82b. The main memory 82a is composed of RAM (Random Access Memory) that stores processing programs, etc. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) etc. that stores control data and image data necessary for control. In addition, it is possible to connect an external storage device to the control unit 80.

[0035] The input / output device 83 includes a monitor 83a that displays the device status and information, a pointing device such as a touch panel 83b for inputting operator instructions and a mouse 83c for operating the monitor 83a, and an image acquisition device 83d for acquiring image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the drive units 86 of the wafer supply unit 10, such as the XY table (not shown), pickup head table 23, and bond head table 43. The I / O signal control device 83f acquires signals from various sensors in the signal unit 87 and controls switches and volumes that control the brightness of the illumination device in the signal unit 87, valves that control vacuum suction, etc. The optical system 88 includes a wafer recognition camera 14, a stage recognition camera 34, a substrate recognition camera 44, and a coaxial illumination device 100. The wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 quantify light intensity and color. The coaxial lighting device 100 controls the light-emitting surface 103. The control and calculation device 81 receives necessary data via the bus line 84, performs calculations, and sends information to control the pickup head 21, monitor 83a, etc.

[0036] The control unit 80 stores image data captured by the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 via the image acquisition device 83d in the storage device 82. Based on the stored image data, programmed software uses the control and calculation device 81 to position the die D and the package area P of the substrate S, and to perform visual inspection of the die D and the substrate S. Based on the position of the die D and the package area P of the substrate S calculated by the control and calculation device 81, the software moves the drive unit 86 via the motor control device 83e. This process positions the die D on the wafer, operates the pickup head table 23 and the bond head table 43, and bonds the die D onto the package area P of the substrate S.

[0037] The control unit 80 can be configured by installing the above-described program stored in an external storage device on a computer. The external storage device includes, for example, an HDD, a USB memory, an SSD, and the like. The auxiliary storage device 82b and the external storage device are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term "recording medium" is used in this specification, it may include only the auxiliary storage device 82b alone, only the external storage device alone, or both of them. Note that the provision of programs and data to the computer and the provision of programs and data from the computer to an external device may be performed using communication means such as the Internet or a dedicated line without using the external storage device.

[0038] A part of the manufacturing process of the semiconductor device using the die bonder 1 (manufacturing method of the semiconductor device) will be described with reference to FIG. 6. FIG. 6 is a flowchart showing the manufacturing method of the semiconductor device using the die bonder shown in FIG. 1. In the following description, the operations of each part constituting the die bonder 1 are controlled by the control unit 80.

[0039] (Wafer loading process: Step S1) A wafer cassette storing the wafer ring WR is loaded into the wafer cassette lifter 11. The loaded wafer ring WR is supplied (loaded) to the wafer holding stage 12.

[0040] (Substrate loading process: Step S2) A transfer jig (not shown) storing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transfer jig (not shown) is taken out from the transfer jig (not shown). Then, it is supplied (loaded) to the bonding unit 40 via the transfer unit 50.

[0041] (Pickup process: Step S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is imaged by light from a coaxial illumination device 100 positioned at a distance from the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by the imaging. The amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1 is calculated by image processing, and the die D is positioned accordingly. The die position reference point is a predetermined position on the wafer holder 12, which is set as the initial setting of the device. The surface inspection of the die D is performed by image processing of the image data.

[0042] The positioned die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled from the dicing tape DT, is attracted and held by a collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0043] The die D on the intermediate stage 31 is imaged by the illumination light from the separated coaxial illumination device 100, which was used to recognize the die D of the wafer W and the stage recognition camera 34. Based on the image data acquired through imaging, the die D is positioned and its surface inspected. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1 is calculated, and positioning is performed. The die position reference point is a predetermined position on the intermediate stage 31, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data.

[0044] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0045] (Bond process: Process S4) The transport unit 50 transports the substrate S to the bond stage 46. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44 and the light emitted from the separated coaxial illumination device 100 used during the pickup process (process S3), and image data is acquired through imaging. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the bonding unit 40, which is held as the initial setting of the device.

[0046] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. The die D bonded to the substrate S is imaged by the substrate recognition camera 44, and an inspection is performed based on the image data acquired by the image to determine whether the die D has been bonded to the desired position (relative position inspection of die D and substrate S), etc.

[0047] The bond head 41, having bonded die D to substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to substrate S. This process is repeated until die D is bonded to all package areas P on substrate S.

[0048] (Substrate unloading process: Process S5) The transport unit 50 transports the substrate S, to which the die D has been bonded, from the bonding unit 40 to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is removed and stored in a transport jig (not shown), and the substrate S is unloaded. The transport jig (not shown) containing the substrate S is unloaded from the die bonder 1.

[0049] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, a transport jig (not shown) containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0050] As described above, the coaxial illumination device 100 used in the pickup process (process S3) and the bonding process (process S4) is shared by the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 on the Y axis. This coaxial illumination device 100 has a structure in which the dimension in the Y axis direction, which is the first direction, is longer than the dimensions in the X axis direction and the Z axis direction, and as shown in Figure 5, the semi-transparent mirror 104 is tilted at approximately 45 degrees. As described above, this semi-transparent mirror 104 is made up of a single piece that is longer than the distance from the wafer recognition camera 14 to the position of the substrate recognition camera 44.

[0051] Of course, the semi-transparent mirror 104 may consist of two in total: one for the wafer recognition camera 14 and one shared by the stage recognition camera 34 and the substrate recognition camera 44. Alternatively, it may consist of three in total, with one mirror provided for each camera. Furthermore, the light-emitting surface 103 of the point light source 101 may also be divided into two or three sections to match the number of semi-transparent mirrors mentioned above.

[0052] Furthermore, Figure 2 shows, as an example, 52 point light sources 101 in the Y-axis direction and 8 in the Z-axis direction. However, the number of point light sources 101 is not limited to this and can be changed as appropriate to match the size of the die bonder 1 or coaxial lighting device 100, and it goes without saying that the size of the individual point light sources 101 can also be changed. Smaller point light sources 101 allow for finer control of the illumination range, while larger point light sources 101 allow for easier control of the light-emitting area.

[0053] Here, we will explain the illumination light from the coaxial illumination device 100. Note that, for the purpose of explaining the illumination light on the object being imaged, the pickup head 21 and collet 22, and the bond head 41 and collet 42, located below the coaxial illumination device 100, will be omitted from the drawings from Figure 7 onward.

[0054] Figure 7 illustrates an example of light emission from the coaxial illumination device in the wafer supply section in an embodiment viewed from the direction of arrow A in Figure 1. The illumination light F1 from the coaxial illumination device 100, separated from each camera, can be selectively emitted by the control unit 80, for example, according to the line in the Z-axis direction in which the point light sources 101 are arranged in an array, and illumination is performed. The group of point light sources 101 effective for the wafer W is programmed and lit as an illumination area E-1, illuminating the wafer W, which is the imaging target area, and the die D, which is the pick-up target. Here, the light emission intensity is constant for each of the point light sources 101 arranged in the Z-axis direction. The captured image is then registered by the control unit 80.

[0055] In this example, the light-emitting area E-1 of the point light source 101 of the coaxial illumination device 100 relative to the wafer W shows 14 points in the Y-axis direction and 8 points in the Z-axis direction. However, it goes without saying that the number of points in the first direction, the Y-axis direction, can be adjusted according to the size or number of objects to be imaged.

[0056] Figure 8 illustrates an example of light emission from the coaxial illumination device in the bonding section in an embodiment viewed from the direction of arrow A in Figure 1. The illumination light F2 from the coaxial illumination device 100, which is spaced apart from each camera, is selectively emitted by the control unit 80 according to the Z-axis direction line in which the point light sources 101 are arranged in an array, similar to the wafer supply unit 10 described above, and is irradiated onto the substrate S, which is the imaging target area. In this bonding section 40, the die D held by the collet 42 is bonded based on the position recognition mark (not shown) of the package area P of the substrate S, which is imaged by the substrate recognition camera 44. At this time, the number of point light sources 101 on the Y1 side and Y2 side of the Y axis from the central axis, shown by the dashed line, is the same. By having the same number on both the left and right sides with respect to the central axis, it is possible to prevent the occurrence of biased shadows, etc., which can cause misjudgment when imaging the position recognition mark (not shown). Here, the light emission intensity of the point light sources 101 in the Z-axis direction is constant. Then, the captured image is registered by the control unit 80. In Figure 8, an example shows an area with four point light sources 101 in the Y-axis direction and eight in the Z-axis direction. However, the number of point light sources 101 is not limited to this and can be changed as appropriate according to the size of the die D or the substrate S, and it goes without saying that the size of each point light source 101 can also be changed. Similarly, the intermediate stage section 30 can also be used to illuminate the imaging target area with illumination light.

[0057] The effects of this embodiment will be described below.

[0058] Since the coaxial lighting device 100 can be shared by the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 on the Y axis, the die bonder 1 can be made more compact.

[0059] Since the array of point light sources 101 is selectively illuminated, the brightness can be made uniform within the illumination range of each processing unit.

[0060] Since the coaxial lighting device 100 extends and is fixed in the first direction, the Y-axis direction, and at least the substrate recognition camera 44 and the lighting device can be separated, the substrate recognition camera 44 can be made lighter, and vibrations of the die bonder 1 are less likely to occur.

[0061] Since the coaxial lighting device 100 extends and is fixed in the first direction, the Y-axis direction, and the substrate recognition camera 44 and the lighting device can be separated, the substrate recognition camera 44 can be made lighter, and the movement of the substrate recognition camera 44 on the substrate S can be increased in speed.

[0062] By making the depth of Die Bonder 1 in the Y-axis direction more compact, the distance between each camera can also be shortened, resulting in a shorter cycle time for Die Bonder 1.

[0063] The following are some examples of typical modifications of the embodiments. In the following descriptions of modifications, the same reference numerals as in the embodiments described above may be used for parts having the same configuration and function as those described in the embodiments described above. Furthermore, the descriptions of such parts may be appropriately referenced from the embodiments described above, to the extent that they do not contradict the technical standards. In addition, some of the embodiments described above, and all or some of the modifications, may be applied in combination as appropriate, to the extent that they do not contradict the technical standards.

[0064] (First torture) The first modified example will be explained using Figure 9. Figure 9 is a diagram illustrating an example of light emission from the coaxial illumination device at the bonding section in the first modified example, as viewed from the direction of arrow A in Figure 1. The illumination light F3 from the coaxial illumination device 100 is illuminated onto the die D present in the imaging target area by, for example, the control unit 80 programmatically changing the light emission intensity of the point light source 101 of the coaxial illumination device 100 in the Z-axis direction and emitting light. That is, the light emission intensity can be changed line by line. The light emission intensity of the upper half of the light emission area E-3 in the Z-axis direction of the point light source 101 is set to be weaker than the light emission intensity of the lower half of the light emission area E-4. Here, the light emission intensity in the Y-axis direction is kept constant. By providing two stages of light emission areas in the Z-axis direction, line by line, the substrate recognition camera 44 can observe the possibility of deformation of the position recognition mark (not shown) of the package area P of the substrate S to which the die D is bonded. The captured image is then registered by the control unit 80.

[0065] At this time, the number of light-emitting points from the point light source 101 on the Y1 and Y2 sides of the Y-axis relative to the central axis of the substrate recognition camera 44 (shown by the dashed line) is the same on both sides in order to observe the possibility of deformation of the position recognition mark (not shown).

[0066] Furthermore, the change in the emission intensity of the point light source 101 in the Z-axis direction is not limited to two stages; it can also be changed in accordance with the arrangement of the point light sources 101. In addition, although the change in the emission intensity of the point light source 101 in the Y-axis direction is not shown in the above example, it is of course possible to programmatically change it in the Y-axis direction as appropriate according to the size and shape of the object being imaged.

[0067] (Second variation) Next, a second modification will be explained using Figures 10 and 11. Figure 10 is a diagram illustrating an example of light emission from the coaxial illumination device at the bonding section in the second modification, viewed from the direction of arrow A in Figure 1, and Figure 11 is a diagram illustrating the configuration of the coaxial illumination device, viewed from the direction of arrow G in Figure 10. The illumination light F4 from the coaxial illumination device 200 is irradiated onto the die D present in the imaging target area by selectively emitting light from the point light sources 201 arranged in a sequence along the Y-axis or Z-axis direction by the control unit 80, for example. Here, the light emission intensity of each point light source 201 arranged along the Z-axis direction is constant. In the second modification, a light diffusion member 205 is provided on the light emission surface 203 of the point light sources 201 arranged in a sequence on the light source substrate 202 of the coaxial illumination device 200, and a semi-transparent mirror 204 is provided inside the cylinder. This light diffusion member 205 transmits the illumination light F4 from the light emission area E-5 and diffuses the light to equalize the illumination intensity. For example, a frosted glass sheet or frosted glass film is used, which has the effect of reducing unevenness in the LED, which is a point light source 101. This effect makes it possible to clearly observe the position recognition mark (not shown) of the package area P of the substrate S to which the die D is bonded. The captured image is then registered by the control unit 80.

[0068] In this second modified example, it is desirable that the number of light-emitting points from the point light sources 201 on the Y1 and Y2 sides of the Y-axis relative to the central axis of the substrate recognition camera 44, as shown by the dashed line, be the same on both sides.

[0069] (Third variation) A third modification will be explained using Figure 12. Figure 12 is a diagram illustrating an example of light emission from the coaxial illumination device at the bonding section in the third modification, as viewed from the direction of arrow A in Figure 1. In this third modification, the point light sources 301 of the light emission area E-6, which are arranged in a sequence on the light source substrate 302 of the coaxial illumination device 300, are not the same color light emitted by LEDs, but rather arranged with different emission colors, for example, using the three primary colors RGB (Red, Green, Blue), with each point light source 301 having a different primary color. The illumination light F5 of the coaxial illumination device 300 is selectively emitted on the light emission surface 303 according to the Y-axis or Z-axis line in which these point light sources 301 are arranged in a sequence, by the control unit 80, for example, and is illuminated on the die D present in the imaging target area. Here, the emission intensity of the point light sources 301 in the Z-axis direction is constant. In addition, a semi-transparent mirror 304 is provided inside the cylinder. The control unit 80 emits light of the three primary colors RGB, enabling quick recognition of color or shape in the observed image, regardless of the color of the position recognition mark (not shown) of the package area P of the substrate S where the die D of the substrate S is bonded. The captured image is then registered by the control unit 80. This leads to a reduction in cycle time, in line with the miniaturization of the semiconductor manufacturing equipment by shortening the distance between each camera of the die bonder 1. Furthermore, the arrangement of RGB is not limited to the arrangement shown in Figure 13; it can be arranged in any way as long as the same color is not adjacent to each other vertically or horizontally.

[0070] In this third modified example, it is desirable that the number of light-emitting points from the point light sources 201 on the Y1 and Y2 sides of the Y-axis relative to the central axis of the substrate recognition camera 44, as shown by the dashed line, be the same on both sides.

[0071] (Fourth variation) The fourth modification will be explained using Figure 13. Figure 13 is a diagram illustrating an example of light emission from the coaxial illumination device at the bonding section in the fourth modification, as viewed from the direction of arrow A in Figure 1. The illumination light F6 from the coaxial illumination device 100 is irradiated onto the die D present in the imaging target area by selectively emitting light from the point light sources 101 arranged in an array along the Z-axis direction by the control unit 80, for example. Here, the light emission intensity of the point light sources 101 in the Z-axis direction is constant. However, in this fourth modification, the light emission area E-7 of the point light sources 101 of the coaxial illumination device 100 is asymmetrical with respect to the central axis of the substrate recognition camera 44, which is shown by the dashed line. That is, the number of light-emitting points 201 on the Y1 side and Y2 side of the Y-axis with respect to the central axis of the substrate recognition camera 44, which is shown by the dashed line, is not the same on the left and right, but can emit light asymmetrically.

[0072] The control unit 80 causes the number of emitting point light sources 101 to be asymmetrical with respect to the central axis of the substrate recognition camera 44, resulting in variations in illumination intensity along the Y-axis. The shape of the position recognition marks (not shown) in the package area P of the substrate S to which the die D is bonded is complex, or the influence of patterns near the position recognition marks (not shown) may prevent clear illumination with uniform light. Using this fourth modified method, for example, it becomes possible to image the position recognition marks (not shown) more three-dimensionally and recognize them accurately. The captured image is then registered by the control unit 80. Of course, it is also possible to perform this operation multiple times at the same observation point, changing the emission area of ​​the point light sources 101 asymmetrically with respect to the substrate recognition camera 44. Furthermore, asymmetric emission with respect to the central axis is possible not only with the substrate recognition camera 44, but also with the wafer recognition camera 14 or the stage recognition camera 34.

[0073] In these first to fourth modifications, an area with four point light sources in the Y-axis direction and eight in the Z-axis direction is shown as an example. However, the number of point light sources is not limited to this and can be changed as appropriate according to the size of the die D or the substrate S. It goes without saying that the size of the individual point light sources can also be changed. Furthermore, in the wafer supply unit 10 and the intermediate stage unit 30, illumination light can be irradiated onto the imaging target area in the same way as in the bonding unit 40 of the first to fourth modifications.

[0074] As described above, the same effects as those of the embodiments can be obtained in these modified examples as well.

[0075] Since the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 on the Y-axis can share the coaxial illumination device 100, the die bonder 1 can be made more compact.

[0076] Furthermore, since the array of point light sources 101 is selectively illuminated, it becomes possible to illuminate the object being imaged in a way that is tailored to it.

[0077] In each modified example, the separation of the substrate recognition camera 44 and the lighting device makes it possible to reduce the weight of the movable substrate recognition camera 44, and the movement of the substrate recognition camera 44 on the substrate S becomes faster without causing vibration in the die bonder 1. Furthermore, the increased speed of the substrate recognition camera 44 and the compact size of the die bonder 1 shorten the distance between each camera, thereby reducing the cycle time of the die bonder 1.

[0078] The disclosure made by the Discloser has been described in detail above based on embodiments and modifications, but it goes without saying that the disclosure is not limited to the embodiments and modifications described above and can be modified in various ways.

[0079] For example, in this embodiment, an example was described in which three cameras—a wafer recognition camera 14, a stage recognition camera 34, and a substrate recognition camera 44—are used as the imaging device. However, the pickup unit 20, the intermediate stage unit 30, and the bonding unit 40 may be imaged by moving a single camera.

[0080] In this embodiment, an example using a die attach film (DAF) has been described, but a preform section for applying adhesive to the substrate may be provided instead of using a DAF. The preform section includes a preform head for applying paste-like adhesive, a preform table for driving the preform head in the vertical and horizontal directions, and a preform stage for holding the substrate.

[0081] Furthermore, in the embodiment, an intermediate stage section 30 is provided between the pickup section 20 and the bonding section 40, and the die D picked up from the pickup section 20 by the pickup head 21 is placed on the intermediate stage 31, and the die D is picked up again from the intermediate stage 31 by the bond head 41 and bonded to the transported substrate S. However, the die D picked up from the pickup section 20 by the bond head 41 may be bonded to the substrate S. In this case, the same effects as in the embodiment can be achieved by sharing the illumination device between the wafer recognition camera 14 and the substrate recognition camera 44.

[0082] Furthermore, although the embodiment includes one pickup head 21 and one bond head 41, there may be two or more of each. Also, although the embodiment includes an intermediate stage 31, the intermediate stage 31 may be omitted.

[0083] In this embodiment, bonding is performed with the surface of die D facing upwards, but after picking up die D, the die D may be flipped over and bonded with the back surface facing upwards. This device is called a flip-chip bonder.

[0084] In this embodiment, a die bonder was used as an example, but it can also be applied to semiconductor manufacturing equipment that places picked-up dies onto a tray.

[0085] Furthermore, although a semiconductor manufacturing apparatus was described in the embodiment, it can also be applied to mounting apparatus for mounting electronic components onto printed circuit boards. [Explanation of Symbols]

[0086] 1. Die bonder (semiconductor manufacturing equipment) 12. Wafer holder (first support section) 14. Wafer recognition camera (first imaging device) 31. Intermediate stage (third support section) 34. Stage Recognition Camera (Third Imaging Device) 44. Circuit board recognition camera (second imaging device) 46. ​​Bond Stage (Second Support Section) 100...Coaxial lighting device (lighting device)

Claims

1. A first imaging device for imaging the first object to be imaged, A second imaging device for imaging a second object, An illumination device extending in the first direction and shared by the first imaging device and the second imaging device, A first support portion that supports the first object to be imaged, The second object to be imaged is supported by a second support portion which is different from the first support portion, Semiconductor manufacturing equipment equipped with the following features.

2. In the semiconductor manufacturing apparatus according to claim 1, The first imaging device captures the first object to be imaged, which is illuminated by the illumination device. The second imaging device captures the second object to be imaged, which is illuminated by the illumination device. A semiconductor manufacturing apparatus configured in such a way.

3. In the semiconductor manufacturing apparatus according to claim 1, The first object to be imaged is a die, The second object to be imaged is a semiconductor manufacturing apparatus, which is a substrate or a die placed on the substrate.

4. In the semiconductor manufacturing apparatus according to claim 1, The second imaging device is a semiconductor manufacturing apparatus configured to be movable in the first direction.

5. In the semiconductor manufacturing apparatus according to claim 1, The aforementioned lighting device is a semiconductor manufacturing apparatus with coaxial lighting.

6. In the semiconductor manufacturing apparatus of claim 5, The illumination device is a semiconductor manufacturing apparatus comprising a light-emitting surface longer than the distance between the position of the first imaging device and the position of the second imaging device.

7. In the semiconductor manufacturing apparatus of claim 5, The aforementioned lighting device is a semiconductor manufacturing apparatus in which point light sources are arranged in an array.

8. In the semiconductor manufacturing apparatus of claim 7, The illumination device is configured such that the point light source is programmable to emit light only in the area to be imaged by the first imaging device or the second imaging device.

9. In the semiconductor manufacturing apparatus of claim 8, The aforementioned lighting device is a semiconductor manufacturing apparatus configured such that the point light source can emit light in separate lines.

10. In the semiconductor manufacturing apparatus of claim 9, The lighting device is a semiconductor manufacturing apparatus configured such that the point light source can vary in intensity for each line.

11. In the semiconductor manufacturing apparatus of claim 6, The lighting device is a semiconductor manufacturing apparatus in which a light-diffusing member is provided on the light-emitting surface.

12. In the semiconductor manufacturing apparatus of claim 7, The aforementioned lighting device is a semiconductor manufacturing apparatus in which the point light sources are arranged with different emission colors.

13. In the semiconductor manufacturing apparatus of claim 7, The illumination device is a semiconductor manufacturing apparatus configured such that the point light source can emit light asymmetrically with respect to the central axis of the first imaging device or the second imaging device.

14. In the semiconductor manufacturing apparatus according to claim 1, further, Between the first imaging device and the second imaging device, a third imaging device is provided, which is arranged such that the illumination device is shared between the first imaging device and the second imaging device, and which images a third object to be imaged. The third object to be imaged is supported by a third support portion that is different from the first support portion and the second support portion, Semiconductor manufacturing equipment equipped with the following features.

15. A lighting device shared by a first imaging device that images a first object to be imaged, which is supported by a first support portion, and a second imaging device that images a second object to be imaged, which is supported by a second support portion different from the first support portion.

16. A semiconductor device manufacturing apparatus comprising: a first imaging device for imaging a first object to be imaged; a second imaging device for imaging a second object to be imaged; an illumination device extending in a first direction and shared by the first imaging device and the second imaging device; a first support portion for supporting the first object to be imaged; a second support portion for supporting the second object to be imaged and different from the first support portion; and a control device configured to register images of the first object to be imaged and the second object to be imaged, respectively, a method for manufacturing a semiconductor device, wherein The first imaging device takes an image of the first object to be imaged, which is illuminated by the illumination device, The process involves the second imaging device imaging the second object to be imaged, which is illuminated by the illumination device, A method for manufacturing a semiconductor device containing [a specific component].

17. A lighting method in a lighting device according to claim 15, When the first imaging device images the first object to be imaged, the illumination device irradiates the first object to be imaged with illumination light. An illumination method in which the illumination device irradiates the second object to be imaged with illumination light when the second object to be imaged is imaged with the second imaging device.

Images