Novel sulfonium salt-type polymerizable monomer, polymer photoacid generator, base resin, resist composition, and pattern forming method
JP2026094317APending Publication Date: 2026-06-09SHIN ETSU CHEMICAL CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SHIN ETSU CHEMICAL CO LTD
- Filing Date
- 2026-03-02
- Publication Date
- 2026-06-09
AI Technical Summary
Benefits of technology
【0045】 本発明のスルホニウム塩型重合性単量体由来の繰り返し単位を含む高分子化合物(高分子光酸発生剤、ベース樹脂)は前記繰り返し単位が光酸発生剤として機能する。このような高分子化合物を含む化学増幅レジスト組成物等のレジスト組成物を用いてパターン形成を行った場合、高コントラストで感度が良好であり、MEF、LWR等のリソグラフィー性能に優れ、パターン倒れが抑制されたレジストパターンを形成することができる。特にi線、KrFエキシマレーザー光、ArFエキシマレーザー光、電子線(EB)、EUV等の高エネルギー線を用いるフォトリソグラフィーにおいて、本発明のスルホニウム塩を光酸発生剤として含む化学増幅レジスト組成物は、溶剤溶解性に優れ、かつ高感度·高コントラストで、露光裕度(EL)、LWR等のリソグラフィー性能に優れる。
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Abstract
Provided are a resist composition that is excellent in solvent solubility, highly sensitive and highly contrastive, excellent in lithography performance such as LWR, and resistant to pattern collapse even in fine pattern formation, a polymer contained in the composition, a monomer that provides the polymer, and a pattern forming method using the resist composition. 【Solution means】A sulfonium salt type polymerizable monomer represented by the following formula (1). TIFF2026094317000173.tif30127 (In the formula, p represents an integer of 1 to 3, r represents an integer of 1 to 4, s represents an integer of 0 to 4, and t represents an integer of 0 to 2. R 11 , R 12 is a hydrocarbyl group, R f , R ALU represents a specific substituent. R f and -O-R ALU are bonded to adjacent carbon atoms. A-X - represents a non-nucleophilic counter ion containing a polymerizable group A.)
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