electronic machines

Abstract

It provides a multi-functional, high-definition display device. [Solution] The device has a first pixel, the first pixel has a first light-emitting device, a second light-emitting device, and a first light-receiving device, the first light-emitting device has a first light-emitting layer, the second light-emitting device has a second light-emitting layer, the second light-emitting device has the function of emitting white light, the first light-emitting device has the function of emitting visible light of a different color from the second light-emitting device, the first light-receiving device has the function of detecting the light emitted by the first light-emitting device, the side surface of the first light-emitting layer and the side surface of the second light-emitting layer face each other, and the distance between the side surface of the first light-emitting layer and the side surface of the second light-emitting layer is 8 μm or less.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment. Another aspect of the present invention relates to a method for manufacturing a display device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, information terminals such as smartphones, tablet devices, and notebook personal computers (PCs) have become widespread. These terminals often contain personal information, and various authentication technologies have been developed to prevent unauthorized use. There is a demand for information terminals with various functions, including image display capabilities, touch sensor functions, and fingerprint imaging capabilities for authentication.

[0004] For example, Patent Document 1 discloses an electronic device equipped with a fingerprint sensor in the push-button switch section.

[0005] As a display device, for example, light-emitting devices with light-emitting devices have been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices.

[0006] Among EL elements, organic EL elements can be formed in a film-like structure, making it easy to create large-area elements and giving them high value as surface light sources that can be applied to lighting and other applications.

[0007] For example, Patent Document 2 discloses a lighting fixture using an organic EL element.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0009] One aspect of the present invention is to provide a multifunctional and high-definition display device as one of the problems. One aspect of the present invention is to provide a display device having a lighting function and a high-definition display device as one of the problems. One aspect of the present invention is to provide a display device having a lighting function and a high-resolution display device as one of the problems. One aspect of the present invention is to provide a display device having a lighting function and a highly reliable display device as one of the problems.

[0010] One aspect of the present invention is to provide a method for manufacturing a multifunctional and high-definition display device as one of the problems. One aspect of the present invention is to provide a method for manufacturing a display device having a lighting function and a high-definition display device as one of the problems. One aspect of the present invention is to provide a method for manufacturing a display device having a lighting function and a high-resolution display device as one of the problems. One aspect of the present invention is to provide a method for manufacturing a display device having a lighting function and a highly reliable display device as one of the problems. One aspect of the present invention is to provide a method for manufacturing a display device having a lighting function and a high yield as one of the problems.

[0011] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims. [Means for solving the problem]

[0012] One aspect of the present invention is a display device having a first pixel, the first pixel having a first light-emitting device, a second light-emitting device, and a first light-receiving device, the first light-emitting device having a first light-emitting layer, the second light-emitting device having a second light-emitting layer, the second light-emitting device having the function of emitting white light, the first light-emitting device having the function of emitting visible light of a different color from the second light-emitting device, the first light-receiving device having the function of detecting the light emitted by the first light-emitting device, the side surface of the first light-emitting layer and the side surface of the second light-emitting layer facing each other, and the distance between the side surface of the first light-emitting layer and the side surface of the second light-emitting layer being 8 μm or less.

[0013] In the above, it is preferable that the device has a second pixel, the second pixel having a first light-emitting device, a first light-receiving device, and a second light-receiving device, and the second light-receiving device having a function to detect infrared light.

[0014] In the above, it is preferable that the first light-emitting device has a first light-emitting unit including a first light-emitting layer, and the second light-emitting device has a second light-emitting unit including a second light-emitting layer, a charge generation layer on the second light-emitting unit, and a third light-emitting unit on the charge generation layer. Alternatively, in the above, it is preferable that the first light-emitting device has a first light-emitting unit including a first light-emitting layer, and the second light-emitting device has a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit including a second light-emitting layer on the charge generation layer.

[0015] In the above, it is preferable that the first light-emitting device has the function of emitting red, green, or blue light.

[0016] Another aspect of the present invention is an electronic device comprising the above-mentioned display device, an electric double-layer capacitor, a battery, and a housing, wherein the second light-emitting device is electrically connected to the electric double-layer capacitor, and the electric double-layer capacitor is electrically connected to the battery.

[0017] In the above, it is preferable that the device has a fourth light-emitting device, the fourth light-emitting device having the function of emitting infrared light. Furthermore, in the above, it is preferable that the fourth light-emitting device emits light to the outside of the electronic device via a display device.

[0018] One aspect of the present invention is a display module having a display device with any of the above configurations, to which a connector such as a Flexible Printed Circuits (FPC) or TCP (Tape Carrier Package) is attached, or a display module on which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc.

[0019] One aspect of the present invention is an electronic device having the above-mentioned display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0020] According to one aspect of the present invention, a multi-functional, high-definition display device can be provided. According to one aspect of the present invention, a high-definition display device with an illumination function can be provided. According to one aspect of the present invention, a high-resolution display device with an illumination function can be provided. According to one aspect of the present invention, a large-format display device with an illumination function can be provided. According to one aspect of the present invention, a highly reliable display device with an illumination function can be provided.

[0021] According to one aspect of the present invention, a method for manufacturing a multifunctional and high-definition display device can be provided. According to one aspect of the present invention, a method for manufacturing a high-definition display device having an illumination function can be provided. According to one aspect of the present invention, a method for manufacturing a high-resolution display device having an illumination function can be provided. According to one aspect of the present invention, a method for manufacturing a large-scale display device having an illumination function can be provided. According to one aspect of the present invention, a method for manufacturing a highly reliable display device having an illumination function can be provided. According to one aspect of the present invention, a method for manufacturing a display device having an illumination function with a high yield can be provided.

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0023] [Figure 1] Figure 1A shows an example of a pixel in a display device. Figures 1B and 1C are cross-sectional views showing an example of an electronic device. [Figure 2] Figures 2A to 2C are schematic diagrams showing an example of an electronic device. [Figure 3] Figure 3 is a circuit diagram relating to an example of an electronic device. [Figure 4] Figures 4A and 4B show examples of pixels in a display device. Figures 4C and 4D are cross-sectional views showing examples of electronic devices. [Figure 5] Figure 5 is a cross-sectional view showing an example of an electronic device. [Figure 6] Figure 6 shows an example of a display device layout. [Figure 7] Figure 7 shows an example of a display device layout. [Figure 8] Figure 8 shows an example of a pixel circuit. [Figure 9] Figures 9A to 9D show examples of the configuration of a light-emitting device. [Figure 10]Figures 10A and 10B are cross-sectional views showing an example of a display device. [Figure 11] Figures 11A and 11B are cross-sectional views showing an example of a display device. [Figure 12] Figures 12A and 12B are cross-sectional views showing an example of a display device. [Figure 13] Figures 13A to 13C are cross-sectional views showing an example of a display device. [Figure 14] Figures 14A to 14C are cross-sectional views showing an example of a display device. [Figure 15] Figure 15A is a top view showing an example of a display device. Figure 15B is a cross-sectional view showing an example of a display device. [Figure 16] Figures 16A to 16D show an example of a method for manufacturing a display device. [Figure 17] Figures 17A to 17C show an example of a method for manufacturing a display device. [Figure 18] Figures 18A to 18C show an example of a method for manufacturing a display device. [Figure 19] Figures 19A to 19C show an example of a method for manufacturing a display device. [Figure 20] Figure 20 is a perspective view showing an example of a display device. [Figure 21] Figure 21A is a cross-sectional view showing an example of a display device. Figures 21B and 21C are cross-sectional views showing an example of a transistor. [Figure 22] Figures 22A and 22B show examples of electronic devices. [Figure 23] Figures 23A to 23D show examples of electronic devices. [Figure 24] Figures 24A to 24F show examples of electronic devices. [Modes for carrying out the invention]

[0024] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0025] In the invention described below, the same reference numerals are used in common across different drawings for parts that are identical or have similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0026] Furthermore, the position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0027] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0028] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 8.

[0029] A display device according to one aspect of the present invention has a first pixel including a first light-emitting device, a second light-emitting device, and a first light-receiving device.

[0030] A display device according to one aspect of the present invention can display a full-color image using a first light-emitting device. Furthermore, a display device according to one aspect of the present invention can function as an illumination device using a second light-emitting device.

[0031] The first light-receiving device preferably has a small light-receiving area (also simply referred to as the light-receiving area). By narrowing the imaging range, the first light-receiving device can perform high-resolution imaging. In this case, the first light-receiving device can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces. Depending on the application, the wavelength of light to be detected by the first light-receiving device can be appropriately determined. For example, it is preferable that the first light-receiving device detects visible light.

[0032] The second light-emitting device preferably emits white light. To obtain white light emission, a configuration can be used in which two or more light-emitting layers are stacked, and the light-emitting layers can be selected so that the light emitted by each layer is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary in color, a configuration can be obtained in which the entire light-emitting device emits white light. In this specification, a stacked structure having a layer containing a light-emitting material (also called a light-emitting layer) may be referred to as a light-emitting unit. Furthermore, the light-emitting unit only needs to have a light-emitting layer, and may also have functional layers other than the light-emitting layer (such as an electron injection layer, electron transport layer, hole transport layer, or hole injection layer). In this specification, a layer containing one or more light-emitting units may be referred to as an EL layer.

[0033] Furthermore, to improve the color rendering of the second light-emitting device, it is preferable to increase the number of light-emitting layers included in the second light-emitting device. This broadens the spectrum of the second light-emitting device's emission, making it possible to emit light that is closer to sunlight. Also, by changing the number of light-emitting layers and the light-emitting material included in the second light-emitting device, it is possible to adjust to various wavelengths or color temperatures. For example, if the second light-emitting device has two light-emitting units, i.e., at least two light-emitting layers, by changing the light-emitting material of each light-emitting layer, it is possible to obtain white light emission at various color temperatures such as incandescent color (e.g., 2500K to less than 3250K), warm white (3250K to less than 3800K), white (3800K to less than 4500K), neutral white (4500K to less than 5500K), or daylight (5500K to less than 7100K). Note that the color temperature of the white light emission is not limited to the above color temperatures. For example, the color temperature may be between 1000K and 2500K, or between 7100K and 20000K.

[0034] Alternatively, the instantaneous brightness of the second light-emitting device may be increased to make it function like a flashlight. In this case, the second light-emitting device can be electrically connected to a capacitive element with a large instantaneous discharge rate, such as an electric double-layer capacitor. When the second light-emitting device is made to function like a flashlight, the second light-emitting device should emit white light, and the color temperature of the white light should be increased.

[0035] By having the above configuration, a display device according to one aspect of the present invention can selectively use the functions of full-color display, personal authentication by light detection, illumination with light that has good color rendering, and illumination with a high-brightness flash. In this way, by providing a first light-emitting device, a second light-emitting device, and a first light-receiving device, the display device can be made multi-functional.

[0036] Furthermore, if a pixel is equipped with three light-emitting devices (red, green, and blue) to display full color, and then a white light-emitting device and a light-receiving device are added, then one pixel will consist of five subpixels. In this way, achieving a high aperture ratio in a pixel with many subpixels is extremely difficult. Alternatively, it is difficult to realize a high-resolution display device using pixels with many subpixels.

[0037] When differentiating at least a portion of the EL layer between light-emitting devices of different colors, or between light-emitting devices and light-receiving devices, it is known that this is done by deposition using a shadow mask such as a metal mask or FMM (Fine Metal Mask, high-resolution metal mask). In this specification, devices formed in this manner may be referred to as MM (metal mask) structures. However, with MM structures, deviations from the design occur in the shape and position of island-like organic films due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the deposited film due to vapor scattering, making it difficult to achieve high resolution and high aperture ratio. For this reason, measures have been taken to artificially increase resolution (also called pixel density) by applying special pixel arrangement methods such as pentile arrangements.

[0038] One aspect of the present invention involves processing an EL layer into a fine pattern without using a metal mask or a shadow mask such as an FMM. For example, the EL layer is processed into a fine pattern using photolithography. In this specification, a device formed in this manner may be referred to as a MML (metal maskless) structure device. By using an MML structure, it is possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now. Furthermore, because the EL layer can be differentiated, it is possible to realize a display device that is extremely vivid, has high contrast, and high display quality.

[0039] For example, in an MM structure, it is difficult to reduce the distance between the sides of the EL layers (e.g., light-emitting layers) of two opposing light-emitting devices—one emitting white light and the other emitting EL layer (e.g., light-emitting layer) of a light-emitting device emitting visible light of a different color—to less than 10 μm. With an MML structure, this distance can be reduced to 8 μm or less, 6 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, exposure equipment for LSIs, the gap can be reduced to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This significantly reduces the area of ​​non-emitting regions that may exist between two light-emitting devices, or between a light-emitting device and a light-receiving device, making it possible to approach a 100% aperture ratio. For example, an aperture ratio of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0040] As described above, multi-functionality is achieved through features such as illumination using a white light-emitting device and light detection using a light-receiving device, and a high-definition display device can be realized.

[0041] Furthermore, a display device according to one aspect of the present invention may be configured to include a second pixel in addition to the first pixel. The second pixel has a second light-receiving device in addition to the first light-emitting device and the first light-receiving device described above.

[0042] The second light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor). The wavelength of light detected by the second light-receiving device can be appropriately determined depending on the application. For example, it is preferable that the second light-receiving device detects infrared light. This enables touch detection even in dark places. It is preferable that the second light-receiving device has a larger light-receiving area than the first light-receiving device. By narrowing the imaging range of the first light-receiving device, the first light-receiving device can perform high-resolution imaging compared to the second light-receiving device.

[0043] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0044] Furthermore, the object detection method may be selected according to the function based on the difference in detection accuracy between the first and second light-receiving devices. For example, the scrolling function of the display screen may be implemented using a near-touch sensor function with the second light-receiving device, while the input function using the keyboard displayed on the screen may be implemented using a high-resolution touch sensor function with the first light-receiving device.

[0045] By adding a second pixel equipped with two types of light-receiving devices, it becomes possible to add near-touch sensor functionality in addition to the functions described above, enabling further multi-functionality of the display device.

[0046] As described above, a display device according to one aspect of the present invention can have a high aperture ratio or high resolution, and can also be configured to be multifunctional.

[0047] Figure 1A shows an example of pixels in a display device according to one embodiment of the present invention.

[0048] Pixel 180A, shown in Figure 1A, has sub-pixels (G), (B), (R), (PS), and (W).

[0049] Figure 1A shows an example where each subpixel is arranged in a 2x3 grid within a single pixel 180A. Pixel 180A has three subpixels (subpixel(G), subpixel(B), subpixel(R)) in the top row (row 1) and two subpixels (subpixel(PS), subpixel(W)) in the bottom row (row 2). In other words, pixel 180A has two subpixels (subpixel(G), subpixel(PS)) in the left column (column 1), subpixel(B) in the middle column (column 2), subpixel(R) in the right column (column 3), and subpixel(W) spanning these two columns. Note that the layout of subpixels is not limited to the configuration shown in Figure 1A.

[0050] Figures 1B and 1C show an example of a cross-sectional view of an electronic device 10 having a display device according to one embodiment of the present invention. Here, Figure 1B is a schematic diagram illustrating the functions of the electronic device 10 as a display device and as an object detection device. Figure 1C is a schematic diagram illustrating the functions of the electronic device 10 as a lighting device.

[0051] The electronic device 10 shown in Figures 1B and 1C has a display device 100 between the housing 103 and the protective member 105.

[0052] The display device 100 shown in Figures 1B and 1C corresponds to the cross-sectional structure between the dashed lines A1 and A2 in Figure 1A. The display device 100 has a plurality of light-emitting devices and a plurality of light-receiving devices between the substrate 106 and the substrate 102. The plurality of light-emitting devices and the plurality of light-receiving devices constitute sub-pixels of the pixel 180A shown in Figure 1A.

[0053] Sub-pixel (R) has a light-emitting device 130R that emits red light 31R. Sub-pixel (G) has a light-emitting device 130G that emits green light 31G. Sub-pixel (B) has a light-emitting device 130B that emits blue light 31B. By using these sub-pixels, the electronic device 10 can display a full-color image.

[0054] Furthermore, each sub-pixel (PS) has a light-receiving device 150PS, and each sub-pixel (W) has a light-emitting device 130W that emits white light 31W.

[0055] The light-receiving area of ​​the sub-pixel (PS) should preferably be small; for example, it should be smaller than the light-receiving area of ​​the sub-pixel (W). The smaller the light-receiving area, the narrower the imaging range, which suppresses blurring in the imaging result and improves resolution. Therefore, by using sub-pixels (PS), high-definition or high-resolution imaging can be performed. For example, sub-pixels (PS) can be used to perform imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces.

[0056] For example, as shown in Figure 1B, the green light 31G emitted by the light-emitting device 130G is reflected by the object 108 (in this case, a finger), and the reflected light 32G from the object 108 is incident on the light-receiving device 150PS. The fingerprint of the object 108 can be imaged using the light-receiving device 150PS.

[0057] In this embodiment, an example is shown in which the light-receiving device 150PS detects an object using green light 31G emitted by the light-emitting device 130G. However, the wavelength of light detected by the light-receiving device 150PS is not particularly limited. The light-receiving device 150PS preferably detects visible light, and preferably detects one or more colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. The light-receiving device 150PS may also detect infrared light.

[0058] For example, the light-receiving device 150PS may have the function of detecting the red light 31R emitted by the light-emitting device 130R. Alternatively, the light-receiving device 150PS may have the function of detecting the blue light 31B emitted by the light-emitting device 130B.

[0059] Furthermore, it is preferable that the light-emitting device that emits light detected by the light-receiving device 150PS is located in a sub-pixel close to the sub-pixel (PS) within the pixel. For example, in pixel 180A, the light-receiving device 150PS detects the light emitted by the light-emitting device 130G of the sub-pixel (G) adjacent to the sub-pixel (PS). This configuration improves detection accuracy.

[0060] Furthermore, although the above describes a configuration in which a light-receiving device 150PS is provided, the present invention is not limited to this. Depending on the function to be mounted on the electronic device 10, a configuration without a light-receiving device 150PS may be used. In this case, the light-emitting area of ​​the light-emitting device 130W can be made larger.

[0061] As shown in Figure 1C, the light-emitting device 130W emits white light 31W. To obtain white light emission, a configuration can be used in which two or more light-emitting layers are stacked, and the light-emitting layers can be selected so that the light emitted from each layer is complementary in color. For example, by making the light-emitting color of the first light-emitting layer complementary to the light-emitting color of the second light-emitting layer, a configuration can be obtained in which the entire light-emitting device emits white light. The same applies to light-emitting devices having three or more light-emitting layers.

[0062] Here, the 31W white light can be a light source with high instantaneous brightness, such as a flashlight or strobe light, or a light source with high color rendering, such as a reading lamp. When using the 31W white light as a reading lamp, the color temperature of the white light emission should be lowered. For example, by making the 31W white light incandescent (e.g., 2500K to less than 3250K) or warm white (3250K to less than 3800K), a light source that is gentle on the user's eyes can be created.

[0063] A strobe light function can be implemented, for example, by a configuration that repeatedly switches between emitting and not emitting light in short cycles. A flashlight function can also be implemented, for example, by a configuration that generates a flash of light through instantaneous discharge using principles such as the electric double layer.

[0064] For example, if the electronic device 10 is equipped with a camera function, by using the strobe light function or flashlight function, images can be taken with the electronic device 10 even at night, as shown in Figure 2A. Here, the display device 100 of the electronic device 10 functions as a surface light source, and since shadows are less likely to be cast on the subject, clear images can be taken. Note that the strobe light function or flashlight function can be used not only at night. When equipping the electronic device 10 with a strobe light function or flashlight function, the color temperature of the white light emission should be increased. For example, the color temperature of the light emitted from the electronic device 10 can be set to white (3800K or more and less than 4500K), neutral white (4500K or more and less than 5500K), or daylight (5500K or more and less than 7100K).

[0065] Furthermore, if the flash emits excessively strong light, areas that originally have variations in brightness may appear as a single white color in the image (so-called overexposure). On the other hand, if the flash is too weak, dark areas may appear as a single black color in the image (so-called underexposure). To address this, the light-receiving device 150PS can be used to detect the brightness around the subject, allowing the light-emitting device 130W to adjust to the optimal light output. In other words, the electronic device 10 can also be said to function as an exposure meter.

[0066] Furthermore, the strobe light function and flash light function can be used for crime prevention or self-defense purposes. For example, as shown in Figure 2B, the electronic device 10 can be used to intimidate an attacker by illuminating them. Also, in emergencies such as being attacked by an attacker, it may be difficult to remain calm and direct the light of a self-defense light with a narrow illumination range towards the attacker's face. In contrast, since the display device 100 of the electronic device 10 is a surface light source, even if the orientation of the display device 100 is slightly off, the light emitted from the display device 100 can be brought into the attacker's field of vision.

[0067] Furthermore, as shown in Figure 2B, when the device is used as a flashlight for crime prevention or self-defense, it is preferable to increase the brightness compared to the nighttime shooting shown in Figure 2A. Also, by making the display device 100 flash intermittently multiple times, it is possible to make it easier to intimidate an assailant. In addition, the electronic device 10 may emit a relatively loud buzzer or other sound to call for help from those around it. Emitting the sound near the assailant's face is preferable because it can intimidate the assailant not only with light but also with sound.

[0068] Furthermore, to improve the color rendering of the light emission of the light-emitting device 130W, it is preferable to increase the number of light-emitting layers contained in the light-emitting device 130W, or the number of types of light-emitting materials contained in the light-emitting layers. This makes it possible to obtain a broad emission spectrum with intensity over a wider range of wavelengths, and to exhibit light emission with higher color rendering that is closer to sunlight.

[0069] For example, as shown in Figure 2C, an electronic device 10 capable of emitting light with high color rendering may be used as a reading lamp. In Figure 2C, the electronic device 10 is fixed to the desk 14 using a support 12. By using such a support 12, the electronic device 10 can be used as a reading lamp. Since the display device 100 of the electronic device 10 functions as a surface light source, shadows are less likely to be cast on the object (a book in Figure 2C), and the distribution of reflected light from the object is gentle, so light reflections are less likely. This improves the visibility of the object and makes it easier to see. In addition, since the emission spectrum of the light-emitting device 130W is broad, blue light is also relatively reduced. Therefore, eye strain for the user of the electronic device 10 can be reduced.

[0070] The configuration of the support 12 is not limited to that shown in Figure 2C. Arms or movable parts may be provided as appropriate to maximize the range of motion. Furthermore, while Figure 2C shows the support 12 gripping the electronic device 10 by clamping it, the present invention is not limited to this configuration. For example, a configuration using magnets or suction cups may also be used.

[0071] For the above-mentioned lighting applications, white is preferred as the emitted color. However, there are no particular limitations on the emitted color for lighting applications, and the implementer may select one or more of the most suitable emitted colors as appropriate, such as white, blue, purple, blue-violet, green, yellow-green, yellow, orange, and red.

[0072] Figure 3 shows an example of a circuit related to the light-emitting device 130W of the display device 100. This circuit includes a display device 100 having multiple light-emitting devices 130W, a switch SW1, a capacitive element Cs, a switch SW2, a battery DC, and a functional circuit 20.

[0073] One terminal of each of the multiple 130W light-emitting devices is electrically connected to one terminal of switch SW1, and the other terminal of each of the multiple 130W light-emitting devices is electrically connected to one terminal of the capacitive element Cs and to one terminal of the functional circuit 20. The other terminal of the capacitive element Cs is electrically connected to the other terminal of switch SW1 and to one terminal of switch SW2. One terminal of the battery DC is electrically connected to the other terminal of switch SW2, and the other terminal of the battery DC is electrically connected to the other terminal of the functional circuit 20.

[0074] It is preferable to use an electric double-layer capacitor for the capacitive element Cs. Because electric double-layer capacitors have a large instantaneous discharge rate, a large current can be supplied to the light-emitting device 130W in a short time. This allows the display device 100 to emit light with instantaneous brightness, i.e., a flash.

[0075] Switch SW1 functions as a switch that controls the current flowing to the light-emitting device 130W. For example, when the display device 100 is used as a flashlight, a large current flows instantaneously through switch SW1. Therefore, it is preferable to use a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which has low on-resistance and a fast switching speed, for switch SW1.

[0076] Furthermore, it is preferable to provide a switch SW2 between the battery DC and the capacitive element Cs to control the charging of the capacitive element Cs. In addition, a switch similar to the switch SW1 may be provided between the capacitive element Cs and the functional circuit 20 and the light-emitting device 130W.

[0077] Furthermore, it is preferable to provide a functional circuit 20 for controlling the brightness of the light-emitting device 130W. The functional circuit 20 can control the current flowing to the light-emitting device 130W.

[0078] Furthermore, the functional circuit 20 may be capable of controlling the lighting time of the light-emitting device 130W, etc. Also, for example, it may have a function to switch between the image display mode of the display device 100 shown in Figure 1B and the lighting mode of the display device 100 shown in Figure 1C. Also, for example, in the lighting mode, it may have a function to switch between the night photography flash function shown in Figure 2A, the security flash function shown in Figure 2B, and the reading light function shown in Figure 2C.

[0079] In Figure 3, the functional circuit 20 is placed between the battery DC and the capacitive element Cs, but the present invention is not limited to this, and the functional circuit 20 may be appropriately arranged according to the functions required by the display device 100. Here, it is sufficient that the capacitive element Cs and the light-emitting device 130W are electrically connected so that the charge discharged from the capacitive element Cs flows to the light-emitting device 130W, and that the capacitive element Cs and the battery DC are electrically connected so that the capacitive element Cs can be charged.

[0080] In one aspect of the present invention, the display device may have the above-described configuration of pixel 180A applied to all pixels, or the configuration of pixel 180A may be applied to some pixels and other configurations may be applied to other pixels.

[0081] Furthermore, in order to display high-definition full-color images, it is preferable that sub-pixels (R) having light-emitting devices 130R, sub-pixels (G) having light-emitting devices 130G, and sub-pixels (B) having light-emitting devices 130B be provided in all pixels of the display device. Also, in order to perform high-definition imaging, it is preferable that sub-pixels (PS) having light-receiving devices 150PS be provided in all pixels of the display device. On the other hand, even if sub-pixels (W) having light-emitting devices 130W are provided in only some of the pixels of the display device, it is still possible to realize the illumination function in the display device.

[0082] Therefore, a pixel with a configuration different from pixel 180A is a pixel that does not have a sub-pixel (W) but has other sub-pixels.

[0083] For example, a display device according to one aspect of the present invention may have both the pixel 180A shown in Figure 4A and the pixel 180B shown in Figure 4B.

[0084] Pixel 180B, shown in Figure 4B, has sub-pixels (G), (B), (R), (PS), and (IRS).

[0085] Figures 4C and 4D show an example of a cross-sectional view of an electronic device having a display device according to one embodiment of the present invention.

[0086] The electronic devices shown in Figures 4C and 4D each have a display device 100 and a light source 104 between the housing 103 and the protective member 105.

[0087] The light source 104 has a light-emitting device that emits infrared light 31IR. Preferably, the light source 104 is a light-emitting diode (LED).

[0088] Figure 4C shows an example where the light source 104 is positioned so as not to overlap with the display device 100. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the protective member 105.

[0089] Figure 4D shows an example in which the display device and the light source 104 are installed in a stacked configuration. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the display device 100 and the protective member 105.

[0090] The display device 100 shown in Figures 4C and 4D corresponds to the cross-sectional structure between the dashed line A3 and A4 in Figure 4B. The display device 100 has multiple light-emitting devices and multiple light-receiving devices between the substrate 106 and the substrate 102.

[0091] The sub-pixel (PS) has a photoreceiving device 150PS, and the sub-pixel (IRS) has a photoreceiving device 150IRS. The photoreceiving area of ​​the photoreceiving device 150IRS is larger than that of the photoreceiving device 150PS.

[0092] As shown in Figures 4C and 4D, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light receiving device 150IRS.

[0093] In this embodiment, an example is shown in which an object is detected using infrared light 31IR, but the wavelength of light detected by the light receiving device 150IRS is not particularly limited. It is preferable that the light receiving device 150IRS detects infrared light. Alternatively, the light receiving device 150IRS may detect visible light, or it may detect both infrared and visible light.

[0094] Since the light-receiving device 150IRS used in touch sensors or near-touch sensors does not require the same high precision as detection using the light-receiving device 150PS, it is sufficient to provide it on only some of the pixels of the display device. By reducing the number of light-receiving devices 150IRS in the display device to fewer than the number of light-receiving devices 150PS, the detection speed can be increased.

[0095] In touch sensors or near-touch sensors, object detection can sometimes be made easier by increasing the light-receiving area of ​​the light-receiving device. Therefore, as shown in Figure 5, object 108 may be detected using both the light-receiving device 150PS and the light-receiving device IRS.

[0096] In Figure 5, similar to Figures 4C and 4D, the infrared light 31IR emitted by the light source 104 is reflected by the object (in this case, a finger), and the reflected light 32IR from the object is incident on the light receiving device 150IRS. Furthermore, in Figure 5, the green light 31G emitted by the light-emitting device 130G is also reflected by the object, and the reflected light 32G from the object is incident on the light receiving device 150PS. Although the object is not in contact with the electronic device, it can be detected using the light receiving devices 150IRS and 150PS.

[0097] Furthermore, the light-receiving device 150IRS (and light-receiving device 150PS) can also be used to detect objects in contact with electronic equipment.

[0098] A display device having both the pixel 180A shown in Figure 4A and the pixel 180B shown in Figure 4B, or an electronic device equipped with such a display device, can have eight functions, for example: [1] a function to emit red light using the sub-pixel (R), [2] a function to emit green light using the sub-pixel (G), [3] a function to emit blue light using the sub-pixel (B), [4] a touch sensor (direct touch sensor) function using the sub-pixel (PS), [5] a near-touch sensor function using the sub-pixel (IRS), [6] a personal authentication function such as fingerprint authentication using the sub-pixel (PS), [7] a flashlight function using the sub-pixel (W), and [8] an illumination function using the sub-pixel (W). In this way, a display device according to one aspect of the present invention can achieve multi-functionality. Furthermore, a display device according to one aspect of the present invention can be referred to as a multi-functional display device or a multi-functional panel.

[0099] Figures 6 and 7 show an example of a display device layout.

[0100] The near-touch sensor function can be implemented, for example, by illuminating an object (such as a finger, hand, or pen) with a light source fixed at a specific location, detecting the reflected light from the object with multiple inertial light sensors (IRS), and estimating the object's position based on the detection intensity ratio of the multiple inertial light sensors (IRS).

[0101] Pixels 180B having sub-pixels (IRS) can be configured to be arranged at regular intervals within the display unit, or arranged around the outer edge of the display unit.

[0102] By using only a portion of the pixels for near-touch detection, the drive frequency can be increased. Furthermore, since sub-pixels (W) can be mounted on other pixels, the display device can be made more multi-functional.

[0103] The display device 100A shown in Figure 6 has two types of pixels: pixels 180A and pixels 180B. In the display device 100A, one pixel 180B is provided for every 3x3 pixels (9 pixels), and the configuration of pixel 180A is applied to the remaining pixels.

[0104] Furthermore, the placement of pixel 180B is not limited to one pixel every 3x3 pixels. For example, the number of pixels used for touch detection can be appropriately determined, such as one pixel every 4 pixels (2x2 pixels), one pixel every 16 pixels (4x4 pixels), one pixel every 100 pixels (10x10 pixels), or one pixel every 900 pixels (30x30 pixels).

[0105] The display device 100B shown in Figure 7 has two types of pixels: pixels 180A and pixels 180B. In the display device 100B, pixels 180B are provided on the outer periphery of the display unit, while the configuration of pixels 180A is applied to the other pixels.

[0106] When pixels 180B are provided on the outer perimeter of the display unit, the pixels 180B may be arranged to surround all four sides as shown in Figure 7, or they may be placed at the four corners, or one or more may be placed on each side, allowing for a variety of arrangements to be applied.

[0107] In Figures 6 and 7, infrared light 31IR emitted from a light source 104 located outside the display unit of the display device is reflected by an object 108, and the reflected light 32IR from the object 108 is incident on multiple pixels 180B. The reflected light 32IR is detected by subpixels (IRS) provided in the pixels 180B, and the position of the object 108 can be estimated by the detection intensity ratio of the multiple subpixels (IRS).

[0108] The light source 104 is provided at least outside the display unit of the display device, and may be built into the display device or mounted separately on an electronic device. For example, the light source 104 can be a light-emitting diode that emits infrared light.

[0109] As described above, the layout of the display device can take various forms.

[0110] Figure 8 shows an example of a pixel circuit with two light-receiving devices.

[0111] The pixels shown in Figure 8 include transistors M11, M12, M13, M14, M15, capacitor C1, and photodetectors PD1 and PD2.

[0112] The light receiving device PD1 corresponds to, for example, the light receiving device 150PS in Figure 4C, and the light receiving device PD2 corresponds to, for example, the light receiving device 150IRS. However, it is not limited to this, and the light receiving devices PD1 and PD2 may be light receiving devices with the same configuration or may be light receiving devices with different configurations.

[0113] Transistor M11 has its gate electrically connected to wiring TX, one of its source and drain is electrically connected to the anode electrode of photodetector PD1 and one of its source and drains, and the other of its source and drain is electrically connected to one of its source and drains, the first electrode of capacitor C1, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RS, and the other of its source and drain is electrically connected to wiring VRS. Transistor M13 has one of its source and drain is electrically connected to wiring VPI, and the other of its source and drain is electrically connected to one of its source and drains, and the gate of transistor M14 is electrically connected to wiring SE, and the other of its source and drain is electrically connected to wiring WX. Transistor M15 has its gate electrically connected to wiring SW, and the other of its source and drain is electrically connected to the anode electrode of photodetector PD2. The photodetectors PD1 and PD2 have their cathode electrodes electrically connected to the wiring CL. Capacitor C1 has its second electrode electrically connected to the wiring VCP.

[0114] Transistors M11, M12, M14, and M15 function as switches. Transistor M13 functions as an amplifying element (amplifier).

[0115] In one embodiment of the present invention, it is preferable that all transistors included in the pixel circuit are transistors having a metal oxide (also called an oxide semiconductor) in the semiconductor layer where the channel is formed (hereinafter also referred to as an OS transistor). OS transistors have an extremely small off-current and can retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Furthermore, by using OS transistors, the power consumption of the display device can be reduced.

[0116] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use transistors having silicon in the semiconductor layer where the channel is formed (hereinafter also referred to as Si transistors) for all transistors included in the pixel circuit. Examples of silicon include single-crystal silicon, polycrystalline silicon, amorphous silicon, etc. In particular, it is preferable to use transistors having low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the semiconductor layer (hereinafter also referred to as LTPS transistors). LTPS transistors have high field-effect mobility and can operate at high speeds.

[0117] Alternatively, in a display device according to one aspect of the present invention, two types of transistors may be used in the pixel circuit. Specifically, it is preferable that the pixel circuit has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the function required of the transistor, the quality of the pixel circuit can be improved and the accuracy of sensing or imaging can be increased.

[0118] For example, it is preferable to apply LTPS transistors using low-temperature polysilicon in the semiconductor layer to all of transistors M11 to M15. Alternatively, it is preferable to apply OS transistors using metal oxide in the semiconductor layer to transistors M11, M12, and M15, and apply an LTPS transistor to transistor M13. In this case, either an OS transistor or an LTPS transistor may be applied to transistor M14.

[0119] By applying OS transistors to transistors M11, M12, and M15, it is possible to prevent the potential held at the gate of transistor M13, based on the charge generated in photodetectors PD1 and PD2, from leaking through transistors M11, M12, or M15.

[0120] On the other hand, it is preferable to use an LTPS transistor for transistor M13. LTPS transistors can achieve higher field-effect mobility than OS transistors and have superior driving capability and current capability. Therefore, transistor M13 can operate at a faster speed compared to transistors M11, M12, and M15. By using an LTPS transistor for transistor M13, an output corresponding to a minute potential based on the amount of light received by photodetector PD1 or photodetector PD2 can be quickly provided to transistor M14.

[0121] In other words, in the pixel circuit shown in Figure 8, transistors M11, M12, and M15 have low leakage current, and transistor M13 has high driving capability. As a result, the charge received by photodetectors PD1 and PD2 and transferred via transistors M11 and M15 can be held without leakage, and high-speed readout can be performed.

[0122] Since transistor M14 functions as a switch that directs the output from transistor M13 to wiring WX, it does not necessarily require a small off-current or high-speed operation like transistors M11 through M13 and M15. Therefore, the semiconductor layer of transistor M14 may be made of low-temperature polysilicon or an oxide semiconductor.

[0123] Note that although the transistors in Figure 8 are shown as n-channel transistors, p-channel transistors can also be used.

[0124] As mentioned above, when high-resolution and clear imaging is required, such as for personal authentication, it is preferable to have a small aperture ratio (light-receiving area) for the light-receiving device. On the other hand, when it is sufficient to detect an approximate position, such as for a near-touch sensor, it is preferable to have a large aperture ratio (light-receiving area) for the light-receiving device. Therefore, it is preferable to configure the aperture ratio (light-receiving area) of light-receiving device PD1 to be smaller than that of light-receiving device PD2. Furthermore, when imaging that requires high resolution, it is preferable to turn on transistor M11 and turn off transistor M15 to perform imaging using only light-receiving device PD1. On the other hand, when performing detection over a large area, it is preferable to turn on both transistor M11 and transistor M15 to perform imaging using both light-receiving devices PD1 and PD2. This increases the amount of light that can be captured, making it easier to detect objects located far from the display device.

[0125] As described above, by equipping each pixel with a light-receiving device, the display device of this embodiment can add various functions in addition to the display function, enabling multi-functionality of the display device. For example, using the display device of this embodiment, it is possible to realize functions such as full-color display, personal authentication by light detection, illumination with light that has good color rendering, and illumination with high-brightness flashing lights. Furthermore, sensing functions such as touch sensors or near-touch sensors can be realized.

[0126] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0127] (Embodiment 2) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0128] The light-emitting device shown in Figure 9A has an electrode 772, an EL layer 786, and an electrode 788. Of the electrodes 772 and 788, one functions as an anode and the other as a cathode. Furthermore, of the electrodes 772 and 788, one functions as a pixel electrode and the other as a common electrode. Preferably, of the electrodes 772 and 788, the electrode that extracts light is transparent to visible light, and the other electrode reflects visible light.

[0129] The EL layer 786 of the light-emitting device can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430, as shown in Figure 9A. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may contain, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0130] A configuration having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and in this specification, the configuration shown in Figure 9A is referred to as a single structure.

[0131] Furthermore, Figure 9B shows a modified example of the EL layer 786 of the light-emitting device shown in Figure 9A. Specifically, the light-emitting device shown in Figure 9B has a layer 4430-1 on the electrode 772, a layer 4430-2 on layer 4430-1, a light-emitting layer 4411 on layer 4430-2, a layer 4420-1 on the light-emitting layer 4411, a layer 4420-2 on layer 4420-1, and an electrode 788 on layer 4420-2. For example, when electrode 772 is the anode and electrode 788 is the cathode, layer 4430-1 functions as a hole injection layer, layer 4430-2 functions as a hole transport layer, layer 4420-1 functions as an electron transport layer, and layer 4420-2 functions as an electron injection layer. Alternatively, if electrode 772 is used as the cathode and electrode 788 as the anode, layer 4430-1 functions as an electron injection layer, layer 4430-2 functions as an electron transport layer, layer 4420-1 functions as a hole transport layer, and layer 4420-2 functions as a hole injection layer. This layer structure allows for efficient injection of carriers into the light-emitting layer 4411, thereby increasing the efficiency of carrier recombination within the light-emitting layer 4411.

[0132] Furthermore, as shown in Figure 9C, a configuration in which multiple light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0133] Furthermore, as shown in Figure 9D, a configuration in which multiple light-emitting units (light-emitting units 786a, 786b) are connected in series via an intermediate layer 4440 (also called a charge generation layer) is referred to as a tandem structure in this specification. However, it is not limited to this, and for example, a tandem structure may also be called a stack structure. By using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0134] Furthermore, in Figures 9C and 9D, as shown in Figure 9B, layer 4420 and layer 4430 can each be a laminated structure consisting of two or more layers.

[0135] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 786. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0136] A light-emitting device that emits white light preferably has a configuration in which two or more light-emitting materials are included in the light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers. For example, if the light-emitting colors of light-emitting layers 4411, 4412, and 4413 shown in Figure 9C are complementary in color, a single-structure white light-emitting device can be realized.

[0137] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, the light-emitting layer preferably has two or more light-emitting materials, and the light emitted by each light-emitting material preferably contains spectral components of two or more colors from R, G, and B.

[0138] [Example of display device configuration 1] Figures 10 to 14 illustrate an example of the configuration of a light-emitting device.

[0139] Figure 10A shows a schematic cross-sectional view of the display device 500. The display device 500 includes a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, a light-emitting device 550B that emits blue light, and a light-emitting device 550W that emits white light. In this embodiment, the description of the light-receiving device of the display device is omitted.

[0140] The light-emitting device 550R has a configuration in which one light-emitting unit (light-emitting unit 512R) is provided between a pair of electrodes (electrode 501, electrode 502). Similarly, the light-emitting device 550G has a light-emitting unit 512G, and the light-emitting device 550B has a light-emitting unit 512B. The light-emitting device 550W has a configuration in which two light-emitting units (light-emitting unit 512Q_1, light-emitting unit 512Q_2) are stacked between a pair of electrodes (electrode 501, electrode 502) via an intermediate layer 531.

[0141] Electrode 501 functions as a pixel electrode and is provided for each light-emitting device. Electrode 502 functions as a common electrode and is provided in common to multiple light-emitting devices.

[0142] The light-emitting unit 512R has layers 521, 522, light-emitting layer 523R, layer 524, etc. The light-emitting device 550R has layers 525, etc. between the light-emitting unit 512R and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512R.

[0143] The light-emitting unit 512Q_1 has layers 521, 522, light-emitting layer 523Q_1, layer 524, etc. The light-emitting unit 512Q_2 has layers 522, light-emitting layer 523Q_2, layer 524, etc. The light-emitting device 550W has layers 525, etc. between the light-emitting unit 512Q_2 and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512Q_2.

[0144] Layer 521 includes, for example, a layer containing a material with high hole injection capabilities (hole injection layer). Layer 522 includes, for example, a layer containing a material with high hole transport capabilities (hole transport layer). Layer 524 includes, for example, a layer containing a material with high electron transport capabilities (electron transport layer). Layer 525 includes, for example, a layer containing a material with high electron injection capabilities (electron injection layer).

[0145] Alternatively, the configuration may include layer 521 having an electron injection layer, layer 522 having an electron transport layer, layer 524 having a hole transport layer, and layer 525 having a hole injection layer.

[0146] In Figure 10A, layers 521 and 522 are shown separately, but the diagram is not limited to this. For example, if layer 521 has the functions of both a hole injection layer and a hole transport layer, or if layer 521 has the functions of both an electron injection layer and an electron transport layer, layer 522 may be omitted.

[0147] Furthermore, the intermediate layer 531 has the function of injecting electrons into one of the light-emitting units 512Q_1 and 512Q_2 and holes into the other when a voltage is applied between the electrodes 501 and 502. The intermediate layer 531 can also be called a charge generation layer.

[0148] As the intermediate layer 531, for example, a material applicable to the electron injection layer, such as lithium fluoride, can be suitably used. Alternatively, as the intermediate layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the intermediate layer can be a layer containing a material with high hole transport properties (hole transport material) and an acceptor material (electron-accepting material). Alternatively, the intermediate layer can be a layer containing a material with high electron transport properties (electron-transport material) and a donor material. By forming an intermediate layer having such a layer, it is possible to suppress the increase in driving voltage when light-emitting units are stacked.

[0149] The light-emitting layer 523R of the light-emitting device 550R contains a light-emitting material that emits red light, the light-emitting layer 523G of the light-emitting device 550G contains a light-emitting material that emits green light, and the light-emitting layer 523B of the light-emitting device 550B contains a light-emitting material that emits blue light. The light-emitting devices 550G and 550B have a configuration in which the light-emitting layer 523R of the light-emitting device 550R is replaced with the light-emitting layer 523G and the light-emitting layer 523B, respectively, and the other configurations are the same as those of the light-emitting device 550R.

[0150] By making the emission colors of the emission layer 523Q_1 and emission layer 523Q_2 of the light-emitting device 550W complementary, the light-emitting device 550W can be made into a light-emitting device that emits white light. Preferably, the emission layers 523Q_1 and 523Q_2 each contain light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable that the emission of light from the light-emitting materials in the emission layers 523Q_1 and 523Q_2 contains spectral components of two or more colors from R, G, and B.

[0151] Here, we will explain an example of the combination of light-emitting colors of the light-emitting layers of each light-emitting unit that can be used in the 550W light-emitting device.

[0152] For example, if a 550W light-emitting device has two light-emitting units, a 550W light-emitting device that emits white light can be obtained by emitting red and green light from one unit and blue light from the other unit. Alternatively, a 550W light-emitting device that emits white light can be obtained by emitting yellow or orange light from one unit and blue light from the other unit.

[0153] Furthermore, for example, if the light-emitting device 550W has three light-emitting units, a light-emitting device 550W that emits white light can be obtained by obtaining red light from one of the light-emitting units, green light from another light-emitting unit, and blue light from the remaining light-emitting unit. Alternatively, a blue light-emitting layer can be used in the first light-emitting unit, a yellow, yellow-green, or green light-emitting layer in the second light-emitting unit, and a blue light-emitting layer in the third light-emitting unit. Alternatively, a blue light-emitting layer can be used in the first light-emitting unit, a laminated structure can be used in the second light-emitting unit consisting of a red light-emitting layer and a yellow, yellow-green, or green light-emitting layer, and a blue light-emitting layer in the third light-emitting unit.

[0154] Furthermore, for example, if the 550W light-emitting device has four light-emitting units, a blue light-emitting layer can be used in the first light-emitting unit, a red light-emitting layer in one of the second and third light-emitting units, a yellow, yellow-green, or green light-emitting layer in the other, and a blue light-emitting layer in the fourth light-emitting unit.

[0155] Note that layers 521, 522, 524, and 525 may have the same configuration (material, film thickness, etc.) for each color of light-emitting device, or they may have different configurations.

[0156] In this specification, a configuration in which multiple light-emitting units are connected in series via an intermediate layer 531, such as in the light-emitting device 550W, is called a tandem structure. On the other hand, a configuration in which one light-emitting unit is located between a pair of electrodes, such as in the light-emitting devices 550R, 550G, and 550B, is called a single structure. In this specification, the term "tandem structure" is used, but it is not limited to this; for example, a tandem structure may also be called a stacked structure. By using a tandem structure, it is possible to create a light-emitting device that can emit light with high brightness. Furthermore, compared to a single structure, a tandem structure can reduce the current required to obtain the same brightness, thus improving reliability.

[0157] Furthermore, structures in which the light-emitting layer is made differently for each light-emitting device, such as light-emitting devices 550R, 550G, 550B, and 550W, are sometimes called SBS (Side By Side) structures. Because the SBS structure allows for the optimization of materials and configurations for each light-emitting device, it increases the freedom of material and configuration selection, making it easier to improve brightness and reliability.

[0158] In Figure 10A, the light-emitting units 512R, 512G, and 512B can each be formed as island-like layers. Furthermore, the light-emitting unit 512Q_1, the intermediate layer 531, the light-emitting unit 512Q_2, and the layer 525 can also be formed as island-like layers.

[0159] Figure 10B shows a modified version of the display device 500 shown in Figure 10A. The display device 500 shown in Figure 10B is an example in which layer 525 is provided in common among each light-emitting device, similar to the electrode 502. In this case, layer 525 can be called a common layer. By providing one or more common layers to multiple light-emitting devices in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced. There are no particular limitations on the common layer. For example, one or more layers from hole injection layers, hole transport layers, light-emitting layers, electron transport layers, and electron injection layers can be used as a common layer. For example, a hole injection layer and a hole transport layer may be provided in common among each light-emitting device.

[0160] The display device 500 shown in Figure 11A is an example where the light-emitting device 550W has a configuration in which three light-emitting units are stacked. In Figure 11A, the light-emitting device 550W has a light-emitting unit 512Q_3 stacked on top of a light-emitting unit 512Q_2 via an intermediate layer 531. The light-emitting unit 512Q_3 has layers 522, light-emitting layer 523Q_3, layer 524, etc.

[0161] When applying a tandem structure to a light-emitting device, the number of light-emitting units is not particularly limited and can be two or more.

[0162] Figure 11B shows an example where the display device 500 applies a tandem structure not only to the light-emitting device 550W, but also to the light-emitting devices 550R, 550G, and 550B.

[0163] Each color light-emitting device can be independently configured with either a single or tandem structure. For example, all of the light-emitting devices 550R, 550G, 550B, and 550W may be configured with a tandem structure, all of them with a single structure, one or more of them with a tandem structure, or one or more of them with a single structure. Furthermore, when a tandem structure is applied, the number of light-emitting units in each color light-emitting device can be determined independently.

[0164] The light-emitting device 550R has a configuration in which two light-emitting units (light-emitting unit 512R_1, light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501, electrode 502) with an intermediate layer 531 in between. Similarly, the light-emitting device 550G has light-emitting unit 512G_1, light-emitting unit 512G_2, and the light-emitting device 550B has light-emitting unit 512B_1, light-emitting unit 512B_2.

[0165] The light-emitting unit 512R_1 has layers 521, 522, light-emitting layer 523R, layer 524, etc. The light-emitting unit 512R_2 has layers 522, light-emitting layer 523R, layer 524, etc. The light-emitting device 550R has layers 525, etc. between the light-emitting unit 512R_2 and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512R_2.

[0166] Note that layer 522, light-emitting layer 523R, and layer 524 may have the same configuration (material, film thickness, etc.) in light-emitting unit 512R_1 and light-emitting unit 512R_2, or they may have different configurations.

[0167] The display device 500 shown in Figure 11B can be described as having both a tandem structure and an SBS structure. Therefore, it can combine the advantages of both a tandem structure and an SBS structure. As shown in Figure 11B, the display device 500 has a structure in which two light-emitting units are formed in series, so it may also be called a two-stage tandem structure. In the two-stage tandem structure shown in Figure 11B, a second light-emitting unit having a red light-emitting layer is stacked on top of a first light-emitting unit having a red light-emitting layer. Similarly, in the two-stage tandem structure shown in Figure 11B, a second light-emitting unit having a green light-emitting layer is stacked on top of a first light-emitting unit having a green light-emitting layer, and a second light-emitting unit having a blue light-emitting layer is stacked on top of a first light-emitting unit having a blue light-emitting layer.

[0168] In Figure 11B, the light-emitting unit 512R_1, the intermediate layer 531, the light-emitting unit 512R_2, and the layer 525 can be formed as island-like layers. Furthermore, the light-emitting unit 512G_1, the intermediate layer 531, the light-emitting unit 512G_2, and the layer 525 can be formed as island-like layers. The light-emitting unit 512B_1, the intermediate layer 531, the light-emitting unit 512B_2, and the layer 525 can be formed as island-like layers. Furthermore, the light-emitting unit 512Q_1, the intermediate layer 531, the light-emitting unit 512Q_2, and the layer 525 can be formed as island-like layers.

[0169] The display device 500 shown in Figure 12A is an example of a case where three light-emitting units are stacked. In Figure 12A, the light-emitting device 550R has a light-emitting unit 512R_3 stacked on top of a light-emitting unit 512R_2 via an intermediate layer 531. The light-emitting unit 512R_3 has layers 522, light-emitting layer 523R, layer 524, etc. The same configuration can be applied to the light-emitting unit 512R_3 as to the light-emitting unit 512R_2. The same applies to the light-emitting unit 512G_3 of the light-emitting device 550G and the light-emitting unit 512B_3 of the light-emitting device 550B. In addition, the light-emitting device 550W has a light-emitting unit 512Q_3 stacked on top of a light-emitting unit 512Q_2 via an intermediate layer 531. The light-emitting unit 512Q_3 has layers 522, light-emitting layer 523Q_3, layer 524, etc.

[0170] Figure 12B shows an example where n light-emitting units (where n is an integer greater than or equal to 2) are stacked.

[0171] In this way, by increasing the number of stacked light-emitting units, the brightness obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacks. Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same brightness can be reduced, thus reducing the power consumption of the light-emitting device in proportion to the number of stacks.

[0172] The display device 500 shown in Figures 13A and 13B illustrates an example where two adjacent light-emitting devices are spaced apart, and the electrodes 502 are provided along the sides of the light-emitting unit and the intermediate layer 531. Figure 13A shows an example where light-emitting devices 550R, 550G, and 550B have a single structure, and light-emitting device 550W has a two-stage tandem structure. Figure 13B shows an example where light-emitting devices 550R, 550G, 550B, and 550W all have a two-stage tandem structure.

[0173] In this case, if the intermediate layer 531 and the electrode 502 come into contact, an electrical short circuit may occur. Therefore, it is preferable to insulate the intermediate layer 531 and the electrode 502.

[0174] Figures 13A and 13B show an example in which an insulating layer 541 is provided covering the sides of the electrode 501, each light-emitting unit, and the intermediate layer 531. The insulating layer 541 can be called a sidewall, sidewall protective layer, or sidewall insulating film. By providing the insulating layer 541, the intermediate layer 531 and the electrode 502 can be electrically insulated.

[0175] Furthermore, it is preferable that the sides of each light-emitting unit and the intermediate layer 531 are perpendicular or approximately perpendicular to the surface to be formed. For example, it is preferable that the angle between the surface to be formed and these sides be 60 degrees or more and 90 degrees or less.

[0176] Figure 13C shows an example where layer 525 and electrode 502 are provided along the sides of the light-emitting unit and intermediate layer 531. Furthermore, a two-layer structure of insulating layer 541 and insulating layer 542 is provided as a sidewall protective layer.

[0177] Furthermore, Figure 14A is a modified example of Figure 13C. Also, Figure 14B is an enlarged view of the region 503 shown in Figure 14A. Figure 14A and Figure 13C differ in the shape of the edges of the insulating layer 542. In addition, because the shape of the edges of the insulating layer 542 is different, and the layer 525 and electrode 502 are formed along the shape of the insulating layer 542, the shapes of the layer 525 and electrode 502 are also different. Furthermore, Figure 14A differs from Figure 13C in that the thickness of the insulating layer 542 is greater than the thickness of the insulating layer 541. The shape of the edges of the insulating layer 542 can be rounded, as shown in Figure 14B. For example, when forming the insulating layer 542, if a dry etching method is used and the upper part of the insulating layer 542 is etched by anisotropic etching, the edges of the insulating layer 542 will be rounded, as shown in Figure 14B. Rounding the shape of the edges of the insulating layer 542 is preferable because it improves the coverage of the layer 525 and electrode 502. As shown in Figures 14A and 14B, making the thickness of the insulating layer 542 greater than the thickness of the insulating layer 541 can make it easier to create a rounded shape at the edges.

[0178] The insulating layer 541 (and insulating layer 542), which functions as a sidewall protective layer, prevents electrical short circuits between the electrode 502 and the intermediate layer 531. Furthermore, by covering the sides of the electrode 501, the insulating layer 541 (and insulating layer 542) prevents electrical short circuits between the electrode 501 and the electrode 502. This prevents electrical short circuits at the corners located at the four corners of the light-emitting device.

[0179] It is preferable to use inorganic insulating films for insulating layer 541 and insulating layer 542, respectively. For example, oxides or nitrides such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide can be used. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0180] The insulating layer 541 and insulating layer 542 can be formed by various film deposition methods, such as sputtering, vapor deposition, CVD, and ALD. In particular, since the ALD method causes little film deposition damage to the layer to be formed, it is preferable to form the insulating layer 541, which is directly formed on the light-emitting unit and the intermediate layer 531, using the ALD method. Furthermore, it is preferable to form the insulating layer 542 by sputtering in this case, as this can increase productivity.

[0181] For example, an aluminum oxide film formed by the ALD method can be used for the insulating layer 541, and a silicon nitride film formed by the sputtering method can be used for the insulating layer 542.

[0182] Furthermore, it is preferable that one or both of the insulating layer 541 and insulating layer 542 function as a barrier insulating film against at least one of water and oxygen. Alternatively, it is preferable that one or both of the insulating layer 541 and insulating layer 542 have a function to suppress the diffusion of at least one of water and oxygen. Alternatively, it is preferable that one or both of the insulating layer 541 and insulating layer 542 have a function to capture or fix (also called gettering) at least one of water and oxygen.

[0183] In this specification, a barrier insulating film refers to an insulating film that has barrier properties. In this specification, barrier properties refer to the function of suppressing the diffusion of the corresponding substance (also called low permeability), or the function of capturing or fixing the corresponding substance (also called gettering).

[0184] The insulating layer 541 and the insulating layer 542, or both, have the functions of the barrier insulating film or gettering function described above, thereby suppressing the intrusion of impurities (typically water or oxygen) that could diffuse from the outside into each light-emitting device. This configuration makes it possible to provide a display device with excellent reliability.

[0185] As shown in Figure 14C, the configuration may also be one that does not have insulating layers 541 and 542 that function as sidewall protective layers. In Figure 14C, layer 525 is provided in contact with the side surfaces of each light-emitting unit and the intermediate layer 531.

[0186] In addition, the light-emitting material of the light-emitting layer in the display device 500 is not particularly limited. For example, in the display device 500 shown in Figure 11B, the light-emitting layer 523R of the light-emitting unit 512R_1 has a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 has a fluorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 has a fluorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 has a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 has a fluorescent material.

[0187] Alternatively, in the display device 500 shown in Figure 11B, the light-emitting layer 523R of the light-emitting unit 512R_1 has a phosphorescent material, the light-emitting layer 523R of the light-emitting unit 512R_2 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_1 has a phosphorescent material, the light-emitting layer 523G of the light-emitting unit 512G_2 has a phosphorescent material, the light-emitting layer 523B of the light-emitting unit 512B_1 has a fluorescent material, and the light-emitting layer 523B of the light-emitting unit 512B_2 has a fluorescent material.

[0188] Furthermore, in the display device 500 shown in Figure 11B, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a phosphorescent material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have a fluorescent material. Alternatively, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a fluorescent material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have a phosphorescent material.

[0189] The configuration of the light-emitting unit is not limited to the above. For example, in the display device 500 shown in Figure 11B, the light-emitting layer 523Q_1 of the light-emitting unit 512Q_1 may have a TADF material, and the light-emitting layer 523Q_2 of the light-emitting unit 512Q_2 may have either a fluorescent material or a phosphorescent material. By using different light-emitting materials in this way, for example, by combining a highly reliable light-emitting material with a light-emitting material with high luminous efficiency, it is possible to compensate for the shortcomings of each and create a display device that improves both reliability and luminous efficiency.

[0190] Furthermore, a display device according to one aspect of the present invention may be configured such that a phosphorescent material is used for the red light-emitting layer and a fluorescent material is used for the other light-emitting layers, a fluorescent material is used for the blue light-emitting layer and a phosphorescent material is used for the other light-emitting layers, all light-emitting layers are made of fluorescent material, or all light-emitting layers are made of phosphorescent material.

[0191] Alternatively, in the display device 500 shown in Figure 11B, the light-emitting layer 523R of light-emitting unit 512R_1 may be made of a phosphorescent material and the light-emitting layer 523R of light-emitting unit 512R_2 may be made of a fluorescent material, or the light-emitting layer 523R of light-emitting unit 512R_1 may be made of a fluorescent material and the light-emitting layer 523R of light-emitting unit 512R_2 may be made of a phosphorescent material, that is, the light-emitting materials of the first stage light-emitting layer and the second stage light-emitting layer may be made of different materials. Although the description here specifies light-emitting units 512R_1 and 512R_2, the same configuration can be applied to light-emitting units 512G_1 and 512G_2, and light-emitting units 512B_1 and 512B_2.

[0192] This embodiment can be combined with other embodiments as appropriate.

[0193] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention and a method for manufacturing the same will be explained with reference to Figures 15 to 19.

[0194] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, since the pixels have a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed using all of the subpixels of the display device, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0195] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. Furthermore, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected. Moreover, in a display device according to one aspect of the present invention, the light-emitting devices can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0196] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected light (or scattered light), thus enabling image capture or touch detection even in dark places.

[0197] A display device according to one aspect of the present invention has the function of displaying an image using a light-emitting device. In other words, the light-emitting device functions as a display device (also called a display element).

[0198] As the light-emitting device, it is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) and QLEDs (Quantum-dot Light Emitting Diodes). Examples of light-emitting materials for EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). In addition, LEDs such as microLEDs (Light Emitting Diodes) can also be used as light-emitting devices.

[0199] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0200] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0201] For example, an image sensor can be used to acquire biometric data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By having the display device incorporate the biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided, enabling miniaturization and weight reduction of the electronic device.

[0202] Furthermore, when a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0203] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0204] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0205] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0206] Because organic photodiodes have many layers that can share a common structure with organic EL devices, the number of deposition steps can be suppressed by depositing these common layers in a single process.

[0207] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting device. Furthermore, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a common layer for both the photodetector and the light-emitting device.

[0208] Note that layers common to both light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components are referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0209] When manufacturing a display device having multiple organic EL devices, each with a different light-emitting layer color, it is necessary to form each light-emitting layer with a different color in an island-like structure.

[0210] For example, island-shaped light-emitting layers can be formed using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the formed film due to vapor scattering. This makes it difficult to achieve high resolution and high aperture ratio in display devices.

[0211] In a method for manufacturing a display device according to one aspect of the present invention, island-shaped pixel electrodes (also called lower electrodes) are formed, and a first layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a first color is formed on one surface, and then a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Subsequently, a second layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a second color is formed in an island shape using a second sacrificial layer and a second resist mask, similar to the first layer. In this specification, the sacrificial layer may be referred to as a mask layer.

[0212] Thus, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped EL layer is not formed by the pattern of a metal mask, but rather by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be manufactured separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, by providing a sacrificial layer on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0213] While it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to 8 μm or less, 6 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, an exposure apparatus for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less.

[0214] Furthermore, the pattern of the EL layer itself can be made extremely small compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the pattern, so the effective area that can be used as an emitting region is small relative to the total area of ​​the pattern. On the other hand, with the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even if the pattern is fine, almost the entire area can be used as an emitting region. As a result, it is possible to manufacture a display device that combines high resolution and a high aperture ratio.

[0215] Here, the first layer and the second layer each include at least an emissive layer, and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the emissive layer. By having other layers between the emissive layer and the sacrificial layer, it is possible to suppress the exposure of the emissive layer to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the emissive layer. This can improve the reliability of the light-emitting device.

[0216] Furthermore, in light-emitting devices that emit different colors, it is not necessary to create all the layers constituting the EL layer separately; some layers can be formed in the same process. In one embodiment of the present invention, a method for manufacturing a display device involves forming some of the layers constituting the EL layer in island-like structures for each color, then removing the sacrificial layer, and forming the remaining layers constituting the EL layer and a common electrode (also called an upper electrode) in common for each color.

[0217] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is not formed by the pattern of the metal mask, but rather by processing after depositing the film that will become the active layer onto the entire surface, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, the damage that the active layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0218] [Example of display device configuration 2] Figures 15A and 15B show a display device according to one embodiment of the present invention.

[0219] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0220] Figure 15A shows a top view of the display device 100C. The display device 100C has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit. One pixel 110 is composed of five sub-pixels: sub-pixels 110a, 110b, 110c, 110d, and 110e.

[0221] Figure 15A shows an example where one pixel 110 is arranged in a 2x3 grid. Pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and two subpixels (subpixels 110d and 110e) in the bottom row (row 2). In other words, pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110e spanning these two columns.

[0222] In this embodiment, sub-pixels 110a, 110b, 110c, and 110e each have light-emitting devices that emit light of different colors, and sub-pixel 110d has a light-receiving device. For example, sub-pixels 110a, 110b, and 110c correspond to sub-pixels (G), (B), and (R) shown in Figure 4A, etc. Also, sub-pixel 110d corresponds to sub-pixel (PS) shown in Figure 4A, etc., and sub-pixel 110e corresponds to sub-pixel (W) shown in Figure 4A, etc.

[0223] Furthermore, the device provided in each sub-pixel 110e may be changed for each pixel. This allows for a configuration where some sub-pixels 110e correspond to sub-pixels (W), and other sub-pixels 110e correspond to sub-pixels (IRS) (see Figure 4B).

[0224] Figure 15A shows an example where the connection portion 140 is located below the display portion in a top view, but it is not particularly limited. The connection portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. Also, there may be one or more connection portions 140.

[0225] Figure 15B shows cross-sectional views between the dashed lines X1-X2, Y1-Y2, and Y3-Y4 in Figure 15A.

[0226] As shown in Figure 15B, the display device 100C has light-emitting devices 130a, 130b, 130c, 130e and a light-receiving device 150d (see Figure 19B) provided on a layer 101 containing transistors, and a protective layer 131 is provided to cover these light-emitting and light-receiving devices. A substrate 120 is bonded to the protective layer 131 by a resin layer 119.

[0227] For example, the layer 101 containing transistors can be a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. An example of the configuration of the layer 101 containing transistors will be described later in Embodiment 4.

[0228] Each of the light-emitting devices 130a, 130b, 130c, and 130e emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light. Preferably, the light-emitting device 130e emits, for example, white (W) light.

[0229] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0230] In a light-emitting device, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0231] The light-emitting device 130a includes a pixel electrode 111a on a layer 101 containing a transistor, a first layer 113a on the pixel electrode 111a, a sixth layer 114 on the first layer 113a, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130a, the first layer 113a and the sixth layer 114 can be collectively referred to as the EL layer.

[0232] The first layer 113a includes a first hole injection layer 181a on the pixel electrode 111a, a first hole transport layer 182a on the first hole injection layer 181a, a first light-emitting layer 183a on the first hole transport layer 182a, and a first electron transport layer 184a on the first light-emitting layer 183a.

[0233] The sixth layer 114 may, for example, have an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer laminated together.

[0234] The light-emitting device 130b includes a pixel electrode 111b on a layer 101 containing a transistor, a second layer 113b on the pixel electrode 111b, a sixth layer 114 on the second layer 113b, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130b, the second layer 113b and the sixth layer 114 can be collectively referred to as the EL layer.

[0235] The second layer 113b includes a second hole injection layer 181b on the pixel electrode 111b, a second hole transport layer 182b on the second hole injection layer 181b, a second light-emitting layer 183b on the second hole transport layer 182b, and a second electron transport layer 184b on the second light-emitting layer 183b.

[0236] The light-emitting device 130c includes a pixel electrode 111c on a layer 101 containing a transistor, a third layer 113c on the pixel electrode 111c, a sixth layer 114 on the third layer 113c, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130c, the third layer 113c and the sixth layer 114 can be collectively referred to as the EL layer.

[0237] The third layer 113c includes a third hole injection layer 181c on the pixel electrode 111c, a third hole transport layer 182c on the third hole injection layer 181c, a third light-emitting layer 183c on the third hole transport layer 182c, and a third electron transport layer 184c on the third light-emitting layer 183c.

[0238] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0239] The light-emitting device 130e includes a pixel electrode 111e on a layer 101 containing a transistor, a fifth layer 113e on the pixel electrode 111e, a sixth layer 114 on the fifth layer 113e, and a common electrode 115 on the sixth layer 114. In the light-emitting device 130e, the fifth layer 113e and the sixth layer 114 can be collectively referred to as the EL layer.

[0240] The fifth layer 113e includes a first light-emitting unit 192e on the pixel electrode 111e, an intermediate layer 191e on the first light-emitting unit 192e, and a second light-emitting unit 194e on the intermediate layer 191e. The first light-emitting unit 192e, the intermediate layer 191e, and the second light-emitting unit 194e can each be configured similarly to, for example, the light-emitting unit 512Q_1, the intermediate layer 531, and the light-emitting unit 512Q_2 shown in Figure 10A. That is, the first light-emitting unit 192e can have layers 521, 522, light-emitting layer 523Q_1, layer 524, etc. The second light-emitting unit 194e can have layers 522, light-emitting layer 523Q_2, layer 524, etc.

[0241] The photodetector has an active layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0242] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. In other words, by applying a reverse bias between the pixel electrode and the common electrode, the photodetector can detect incoming light, generate an electric charge, and extract it as an electric current.

[0243] The light-receiving device 150d (see Figures 18C and 19B) includes a pixel electrode 111d on a layer 101 containing a transistor, a fourth layer 113d on the pixel electrode 111d, a sixth layer 114 on the fourth layer 113d, and a common electrode 115 on the sixth layer 114.

[0244] The fourth layer 113d includes a fourth hole transport layer 182d on the pixel electrode 111d, an active layer 185d on the fourth hole transport layer 182d, and a fourth electron transport layer 184d on the active layer 185d.

[0245] The sixth layer 114 is a layer common to both the light-emitting device and the light-receiving device. As described above, the sixth layer 114 has, for example, an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer stacked together.

[0246] Here, layers common to both the light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both the light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0247] Furthermore, the light-receiving device of the subpixel (IRS) shown in Figure 4B can be fitted with the same stacked structure as the light-receiving device 150d.

[0248] The common electrode 115 is electrically connected to the conductive layer 123 provided on the connection portion 140. As a result, the same potential is supplied to the common electrode 115 of each color light-emitting device.

[0249] Of the pixel electrodes and common electrodes, the electrode that extracts light should preferably use a conductive film that transmits visible light and infrared light. Furthermore, it is preferable to use a conductive film that reflects visible light and infrared light on the electrode that does not extract light.

[0250] As materials for forming the pair of electrodes (pixel electrode and common electrode) of the light-emitting device and light-receiving device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0251] It is preferable that the light-emitting device and the light-receiving device have a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device and the light-receiving device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting device. By having a microcavity structure in the light-receiving device, the light received by the active layer can be made to resonate between the two electrodes, thereby strengthening the light and improving the detection accuracy of the light-receiving device.

[0252] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0253] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the transmittance or reflectance of these electrodes to near-infrared light (light with a wavelength of 750 nm to 1300 nm) satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0254] The first layer 113a, the second layer 113b, the third layer 113c, and the fifth layer 113e each have an emissive layer. Preferably, the first layer 113a, the second layer 113b, and the third layer 113c each have an emissive layer that emits light of a different color. In the fifth layer 113e, the first light-emitting unit 192e and the second light-emitting unit 194e each have an emissive layer. Preferably, a configuration is applied in which white light emission is obtained by combining the light from the emissive layers of multiple light-emitting units. The first layer 113a, the second layer 113b, the third layer 113c, the first light-emitting unit 192e, and the second light-emitting unit 194e each may have one or more emissive layers.

[0255] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0256] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, quantum dot materials, and the like.

[0257] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, and the like.

[0258] Examples of the phosphorescent material include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, rare earth metal complexes, and the like.

[0259] In addition to the light-emitting material (guest material), the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0260] The light-emitting layer preferably has, for example, a phosphorescent material, a hole-transporting material, and an electron-transporting material that are a combination likely to form an exciplex. By adopting such a configuration, efficient light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material), can be obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the light-emitting substance, energy transfer becomes smooth and efficient light emission can be obtained. With this configuration, high efficiency, low voltage driving, and long life of the light-emitting device can be achieved simultaneously.

[0261] As layers other than the light-emitting layer, the first layer 113a, the second layer 113b, the third layer 113c, and the fifth layer 113e may further include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, an electron blocking material, or a bipolar substance (a substance with high electron transport property and high hole transport property).

[0262] Either a low molecular weight compound or a high molecular weight compound can be used for the light-emitting device, and it may contain an inorganic compound. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, etc.

[0263] For example, the first layer 113a, the second layer 113b, the third layer 113c, and the fifth layer 113e may each have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0264] The sixth layer 114 can have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, when the pixel electrodes 111a, 111b, 111c, 111e function as anodes and the common electrode 115 functions as a cathode, the sixth layer 114 preferably has an electron injection layer.

[0265] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0266] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0267] In light-emitting devices, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer. In light-receiving devices, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. As an electron-transporting material, 1 × 10 -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0268] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0269] Examples of electron injection layers include lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used.

[0270] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0271] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0272] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0273] Furthermore, a material made by mixing multiple types of substances (also called a composite material) can be used in the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e. Specifically, a composite material containing an alkali metal, alkali metal compound, or alkali metal complex and an electron-transporting material can be used in the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e. It is more preferable that the HOMO level of the electron-transporting material is -6.0 eV or higher.

[0274] Alternatively, a composite material of an acceptor material and a hole transporter material can be used in the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e. Specifically, a composite material of an acceptor material and a material having a relatively deep HOMO level between -5.7 eV and -5.4 eV can be used in the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e. By using this composite material in the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e, the reliability of the light-emitting device can be improved.

[0275] In this specification, a light-emitting device using the above-mentioned composite material for the first layer 113a, the second layer 113b, the third layer 113c, or the fifth layer 113e may be referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).

[0276] The fourth layer 113d has an active layer 185d.

[0277] Furthermore, the configuration of the fourth layer 113d can also be applied to the photodetector of the subpixel (IRS) shown in Figure 4B. The photodetector of the subpixel (IRS) may have an active layer with the same configuration as the fourth layer 113d, or it may have an active layer with a different configuration. For example, by having a microcavity structure in the photodetector, even if the configuration of the active layer is the same, the photodetector of the subpixel (IRS) and the photodetector 150d can detect light of different wavelengths. The microcavity structure can be fabricated in the photodetector of the subpixel (IRS) and the photodetector 150d by changing the thickness of the pixel electrode or the thickness of the optical adjustment layer. In this case, the same configuration as the fourth layer 113d may be applied to the photodetector of the subpixel (IRS).

[0278] The active layer 185d contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 185d is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0279] Examples of the material of the n-type semiconductor included in the active layer 185d include electron-accepting organic semiconductor materials such as fullerene (for example, C 60 fullerene, C 70 fullerene, etc.) and fullerene derivatives. Fullerene has a shape like a soccer ball, and this shape is energetically stable. Fullerene has both deep (low) HOMO level and LUMO level. Since fullerene has a deep LUMO level, its electron-accepting property (acceptor property) is extremely high. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating property (donor property) becomes high. However, since fullerene has a spherical shape, although the π-electrons are widely spread, its electron-accepting property becomes high. A high electron-accepting property is beneficial for a light-receiving device because it causes charge separation to occur efficiently at high speed. C 60 、C 70 both have a broad absorption band in the visible light region. In particular, C 70 is preferable because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long wavelength region. In addition, examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), etc.

[0280] In addition, examples of the n-type semiconductor material include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0281] Examples of the p-type semiconductor material included in the active layer 185d include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), tin(II) phthalocyanine (SnPc), and quinacridone.

[0282] In addition, examples of the p-type semiconductor material include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, and the like. Furthermore, examples of the p-type semiconductor material include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like.

[0283] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0284] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0285] For example, the active layer 185d is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 185d may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0286] The fourth layer 113d may further include layers other than the active layer 185d, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, the fourth layer 113d may have various functional layers that can be used in the first layer 113a, the second layer 113b, the third layer 113c, and the fifth layer 113e.

[0287] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0288] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / (polystyrene sulfonic acid) (abbreviated as PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. In addition, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0289] Furthermore, the active layer 185d can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0290] Furthermore, the active layer 185d may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0291] It is preferable to have a protective layer 131 on the light-emitting devices 130a, 130b, 130c, 130e and the light-receiving device 150d. Providing the protective layer 131 can improve the reliability of the light-emitting devices and the light-receiving devices.

[0292] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0293] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting devices 130a, 130b, 130c, 130e and the light-receiving device 150d, thereby suppressing the degradation of the light-emitting and light-receiving devices and improving the reliability of the display device.

[0294] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxide nitride films and aluminum oxide nitride films. Examples of nitride oxide insulating films include silicon oxide nitride films and aluminum oxide nitride films.

[0295] In this specification, the term "oxidogenic nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content.

[0296] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0297] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0298] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0299] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) that penetrate to the EL layer.

[0300] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0301] Each end of the pixel electrodes 111a, 111b, 111c, 111d, and 111e is covered by an insulating layer 121.

[0302] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0303] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0304] Furthermore, light-emitting devices can be broadly classified into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, one should select light-emitting layers such that the light emitted from each of the two or more layers is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0305] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0306] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0307] In this embodiment, an example is shown where the light-receiving device has a single structure, but a tandem structure may also be applied.

[0308] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices can be 1 μm or less, preferably 500 nm or less, and more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display device of this embodiment has a region where the distance between the side surface of the first layer 113a and the side surface of the second layer 113b, or the distance between the side surface of the second layer 113b and the side surface of the third layer 113c is 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0309] Furthermore, the distance between the light-emitting device and the light-receiving device can also be within the above range. In addition, to suppress leakage between the light-emitting device and the light-receiving device, it is preferable to make the distance between the light-emitting device and the light-receiving device wider than the distance between the light-emitting devices. For example, the distance between the light-emitting device and the light-receiving device can be 8 μm or less, 5 μm or less, or 3 μm or less.

[0310] [Examples of methods for manufacturing display devices] Next, an example of a method for manufacturing a display device will be explained using Figures 16 to 19. Figures 16A to 16D show side by side the cross-sectional views between X1 and X2, between X3 and X4, and between Y1 and Y2, as shown by the dashed line in Figure 15A. Figures 17 to 19 are similar to Figure 16.

[0311] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), ALD, and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0312] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife coating, slit coating, roll coating, curtain coating, and knife coating.

[0313] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0314] Furthermore, when processing the thin film that constitutes the display device, it can be processed using methods such as photolithography. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, or lift-off methods. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0315] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0316] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that when exposure is performed by scanning a beam such as an electron beam, a photomask may not be necessary.

[0317] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0318] First, as shown in Figure 16A, pixel electrodes 111a, 111b, 111c, 111d, 111e, and a conductive layer 123 are formed on the layer 101 containing the transistor. Each pixel electrode is provided on the display section, and the conductive layer 123 is provided on the connection section 140.

[0319] Next, an insulating layer 121 is formed to cover the edges of the pixel electrodes 111a, 111b, 111c, 111d, and 111e, and the edges of the conductive layer 123.

[0320] Then, as shown in Figure 16B, a first hole injection layer 181A, a first hole transport layer 182A, a first light-emitting layer 183A, and a first electron transport layer 184A are formed on each pixel electrode and on the insulating layer 121 in this order, a first sacrificial layer 118A is formed on the first electron transport layer 184A, and a second sacrificial layer 119A is formed on the first sacrificial layer 118A.

[0321] Figure 16B shows an example in which the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, the first electron transport layer 184A, the first sacrificial layer 118A, and the second sacrificial layer 119A are all provided on the conductive layer 123 in a cross-sectional view between Y1 and Y2, but the invention is not limited to this example.

[0322] For example, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, the first electron transport layer 184A, and the first sacrificial layer 118A do not have to overlap with the conductive layer 123. Also, the ends of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A on the connection portion 140 side may be located inward from the ends of the first sacrificial layer 118A and the second sacrificial layer 119A. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask), the areas to be deposited on the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, as well as the first sacrificial layer 118A and the second sacrificial layer 119A, can be varied. In one embodiment of the present invention, a light-emitting device is formed using a resist mask, but by combining it with an area mask as described above, a light-emitting device can be manufactured in a relatively simple process.

[0323] The materials that can be used as pixel electrodes are as described above. For forming the pixel electrodes, for example, sputtering or vacuum deposition can be used.

[0324] The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0325] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Furthermore, inorganic insulating films that can be used for the protective layer 131 can be used as inorganic insulating films for the insulating layer 121.

[0326] When an inorganic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, impurities are less likely to enter the light-emitting device compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting device. When an organic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, the step coverage is higher compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrodes. Therefore, short circuits in the light-emitting device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape or the like. In this specification, a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°.

[0327] The insulating layer 121 is optional. Omitting the insulating layer 121 may increase the aperture ratio of the subpixels. Alternatively, it may be possible to reduce the distance between subpixels, thereby increasing the detail or resolution of the display device.

[0328] The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are layers that later become the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. Therefore, the configurations applicable to the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a described above can be applied to each of them. The first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. Furthermore, the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A may each be formed using a premixed material. In this specification, a premixed material is a composite material obtained by pre-combining or mixing multiple materials.

[0329] In this embodiment, an example is shown in which the sacrificial layer has a two-layer structure consisting of a first sacrificial layer and a second sacrificial layer, but the sacrificial layer may be a single-layer structure or a laminated structure of three or more layers. For the sacrificial layer, a film with high resistance to the processing conditions of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, as well as various functional layers (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and active layer, etc.) formed in later processes, specifically a film with a high etching selectivity ratio, is used.

[0330] For forming the sacrificial layer, methods such as sputtering, ALD (thermal ALD, PEALD), or vacuum deposition can be used. A method that minimizes damage to the EL layer is preferred, and it is preferable to use ALD or vacuum deposition rather than sputtering to form the sacrificial layer.

[0331] It is preferable to use a film that can be removed by wet etching for the sacrificial layer. By using wet etching, the damage inflicted on the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A during processing of the sacrificial layer can be reduced compared to when using dry etching.

[0332] In the manufacturing process of the display device according to this embodiment, it is desirable that the various functional layers constituting the light-emitting device and the light-receiving device (such as hole injection layer, hole transport layer, light-emitting layer, active layer, and electron transport layer) are difficult to process, and that the various sacrificial layers are difficult to process during the processing of the functional layers. It is desirable that the material and processing method of the sacrificial layers and the processing method of the functional layers be selected with these factors in mind.

[0333] As the sacrificial layer, for example, an inorganic film such as a metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film can be used.

[0334] The sacrificial layer can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials.

[0335] Furthermore, metal oxides such as In-Ga-Zn oxide can be used as the sacrificial layer. For example, an In-Ga-Zn oxide film can be formed as the sacrificial layer using a sputtering method. In addition, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0336] In addition, element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0337] Furthermore, various inorganic insulating films that can be used for the protective layer 131 can be used as the sacrificial layer. In particular, oxide insulating films are preferred because they have higher adhesion to the EL layer compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as the sacrificial layer. For example, an aluminum oxide film can be formed as the sacrificial layer using the ALD method. Using the ALD method is preferable because it reduces damage to the substrate (especially the EL layer).

[0338] For example, a laminated structure can be applied as a sacrificial layer, consisting of an In-Ga-Zn oxide film formed by sputtering and an aluminum oxide film formed on the In-Ga-Zn oxide film using ALD. Alternatively, a laminated structure can be applied as a sacrificial layer, consisting of an aluminum oxide film formed by ALD and an In-Ga-Zn oxide film formed on the aluminum oxide film using sputtering. Furthermore, a single-layer structure of an aluminum oxide film formed by ALD can be applied as a sacrificial layer.

[0339] Next, as shown in Figure 16C, a resist mask 190a is formed on the second sacrificial layer 119A. The resist mask can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it. The resist mask 190a is positioned to overlap with the pixel electrode 111a. Preferably, the resist mask 190a does not overlap with the pixel electrodes 111b, 111c, 111d, 111e, and the conductive layer 123. If the resist mask 190a overlaps with the pixel electrodes 111b, 111c, 111d, 111e, or the conductive layer 123, it is preferable to have an insulating layer 121 in between.

[0340] Then, as shown in Figure 16D, a portion of the second sacrificial layer 119A is removed using the resist mask 190a. This removes the region of the second sacrificial layer 119A that does not overlap with the resist mask 190a. Therefore, the second sacrificial layer 119a remains in the position that overlaps with the pixel electrode 111a. After that, the resist mask 190a is removed.

[0341] Next, as shown in Figure 17A, a portion of the first sacrificial layer 118A is removed using the second sacrificial layer 119a. This removes the region of the first sacrificial layer 118A that does not overlap with the second sacrificial layer 119a. Therefore, the stacked structure of the first sacrificial layer 118a and the second sacrificial layer 119a remains in the position that overlaps with the pixel electrode 111a.

[0342] Next, as shown in Figure 17B, a portion of the first hole injection layer 181A, a portion of the first hole transport layer 182A, a portion of the first light-emitting layer 183A, and a portion of the first electron transport layer 184A are removed using the first sacrificial layer 118a and the second sacrificial layer 119a. This removes the regions of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A that do not overlap with the first sacrificial layer 118a and the second sacrificial layer 119a. As a result, the pixel electrodes 111b, 111c, 111d, 111e, and the conductive layer 123 are exposed. Then, a stacked structure consisting of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, the first electron transport layer 184a, the first sacrificial layer 118a, and the second sacrificial layer 119a remains on the pixel electrode 111a. The stacked structure consisting of the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a is also referred to as the first layer 113a.

[0343] The first sacrificial layer 118A and the second sacrificial layer 119A can be processed by wet etching or dry etching, respectively. It is preferable to process the first sacrificial layer 118A and the second sacrificial layer 119A by anisotropic etching.

[0344] By using the wet etching method, damage to the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A during processing of the sacrificial layer can be reduced compared to the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0345] Furthermore, when using the dry etching method, degradation of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed by not using an oxygen-containing gas as the etching gas. When using the dry etching method, it is preferable to use a gas containing noble gases (also called rare gases) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0346] By creating a layered structure for the sacrificial layer, a portion of the layer can be processed using the resist mask 190a, and after removing the resist mask 190a, the portion of the layer can be used as a hard mask to process the remaining layer.

[0347] For example, after processing the second sacrificial layer 119A using a resist mask 190a, the resist mask 190a is removed by ashing using oxygen plasma or the like. At this time, the first sacrificial layer 118A is located on the outermost surface, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A are not exposed. Therefore, damage to the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed during the removal process of the resist mask 190a. Then, the first sacrificial layer 118A can be fabricated using the second sacrificial layer 119a as a hard mask, and the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be fabricated using the first sacrificial layer 118a and the second sacrificial layer 119a as a hard mask.

[0348] The processing of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A is preferably carried out by anisotropic etching. In particular, anisotropic dry etching is preferred. As the etching gas, it is preferable to use a gas containing nitrogen, a gas containing hydrogen, a gas containing noble gas, a gas containing nitrogen and argon, or a gas containing nitrogen and hydrogen. By not using an oxygen-containing gas as the etching gas, the degradation of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A can be suppressed.

[0349] Next, as shown in Figure 17C, a second hole injection layer 181B, a second hole transport layer 182B, a second light-emitting layer 183B, and a second electron transport layer 184B are formed in this order on the second sacrificial layer 119a, pixel electrodes 111b, 111c, 111d, 111e, and insulating layer 121, and a first sacrificial layer 118B is formed on the second electron transport layer 184B, and a second sacrificial layer 119B is formed on the first sacrificial layer 118B.

[0350] The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are layers that later become the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b, respectively. The second light-emitting layer 183b emits light of a different color than the first light-emitting layer 183a. The configurations and materials applicable to the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b are the same as those for the first hole injection layer 181a, the first hole transport layer 182a, the first light-emitting layer 183a, and the first electron transport layer 184a, respectively. The second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be formed using the same method as the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A, respectively.

[0351] The first sacrificial layer 118B and the second sacrificial layer 119B can be formed using materials applicable to the first sacrificial layer 118A and the second sacrificial layer 119A.

[0352] Next, as shown in Figure 17C, a resist mask 190b is formed on the first sacrificial layer 118B. The resist mask 190b is positioned to overlap with the pixel electrode 111b.

[0353] Then, as shown in Figure 18A, a portion of the second sacrificial layer 119B is removed using the resist mask 190b. This removes the region of the second sacrificial layer 119B that does not overlap with the resist mask 190b. Therefore, the second sacrificial layer 119b remains in the position that overlaps with the pixel electrode 111b. After that, the resist mask 190b is removed.

[0354] Next, the first sacrificial layer 118b is formed by processing the first sacrificial layer 118B using the second sacrificial layer 119b as a hard mask. Then, the second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B are formed by processing the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b using the first sacrificial layer 118b and the second sacrificial layer 119b as a hard mask. The stacked structure of the second hole injection layer 181b, the second hole transport layer 182b, the second light-emitting layer 183b, and the second electron transport layer 184b is also referred to as the second layer 113b.

[0355] The first sacrificial layer 118B and the second sacrificial layer 119B can be processed using methods applicable to the processing of the first sacrificial layer 118A and the second sacrificial layer 119A. The second hole injection layer 181B, the second hole transport layer 182B, the second light-emitting layer 183B, and the second electron transport layer 184B can be processed using methods applicable to the processing of the first hole injection layer 181A, the first hole transport layer 182A, the first light-emitting layer 183A, and the first electron transport layer 184A. The resist mask 190b can be removed using methods and timing applicable to the removal of the resist mask 190a.

[0356] Similarly, a stacked structure of a third layer 113c, a first sacrificial layer 118c, and a second sacrificial layer 119c is formed on the pixel electrode 111c, a stacked structure of a fourth layer 113d, a first sacrificial layer 118d, and a second sacrificial layer 119d is formed on the pixel electrode 111d, and a stacked structure of a fifth layer 113e, a first sacrificial layer 118e, and a second sacrificial layer 119e is formed on the pixel electrode 111e.

[0357] Furthermore, it is preferable that the resist mask provided to form the fifth layer 113e is also provided on top of the conductive layer 123. As a result, as shown in Figure 18C, the laminated structure of the first sacrificial layer 118e and the second sacrificial layer 119e remains on the conductive layer 123. This configuration is preferable because it suppresses damage to the conductive layer 123 during the subsequent removal process of the first and second sacrificial layers.

[0358] Next, as shown in Figure 19A, the first sacrificial layers 118a, 118b, 118c, 118d, 118e and the second sacrificial layers 119a, 119b, 119c, 119d, 119e are removed. As a result, the first electron transport layer 184a is exposed on the pixel electrode 111a, the second electron transport layer 184b is exposed on the pixel electrode 111b, the third electron transport layer 184c is exposed on the pixel electrode 111c, the fourth electron transport layer 184d is exposed on the pixel electrode 111d, the second light-emitting unit 194e is exposed on the pixel electrode 111e, and the conductive layer 123 is exposed at the connection portion 140.

[0359] The same method as the sacrificial layer processing method can be used for the sacrificial layer removal process. In particular, by using the wet etching method, the damage inflicted on the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e when removing the sacrificial layer can be reduced compared to when using the dry etching method.

[0360] Next, as shown in Figure 19B, a sixth layer 114 is formed so as to cover the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, the fifth layer 113e, and the insulating layer 121, and a common electrode 115 is formed on the sixth layer 114, the insulating layer 121, and the conductive layer 123.

[0361] The materials that can be used as the sixth layer 114 are as described above. The layers constituting the sixth layer 114 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. The layers constituting the sixth layer 114 may also be formed using a premixed material. The sixth layer 114 may be omitted if it is not needed.

[0362] The materials that can be used as the common electrode 115 are as described above. For the formation of the common electrode 115, for example, sputtering or vacuum deposition can be used.

[0363] Then, as shown in Figure 19B, a protective layer 131 is formed on the common electrode 115.

[0364] The materials that can be used for the protective layer 131 are as described above. Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 131 may be a single-layer structure or a multilayer structure. For example, the protective layer 131 may be a two-layer structure formed using different deposition methods.

[0365] In Figure 19B, an example is shown in which the sixth layer 114 extends into the region of the first layer 113a and the second layer 113b, but as shown in Figure 19C, a void 133 may be formed in that region.

[0366] The void 133 contains, for example, one or more selected from air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically helium, neon, argon, xenon, krypton, etc.).

[0367] Furthermore, if the refractive index of the air gap 133 is lower than that of the sixth layer 114, the light emitted from the light-emitting device is reflected at the interface between the sixth layer 114 and the air gap 133. This suppresses the incidence of light emitted from the light-emitting device on adjacent pixels (or sub-pixels). This suppresses the mixing of light of different colors, thereby improving the display quality of the display device.

[0368] Then, by bonding the substrate 120 onto the protective layer 131 using the resin layer 119, the display device 100C shown in Figure 15B can be manufactured.

[0369] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped EL layer is formed not by the pattern of the metal mask, but by processing after the EL layer is deposited on one surface, so that the island-shaped EL layer can be formed with a uniform thickness. Furthermore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Moreover, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a light detection function and incorporates a light receiving device.

[0370] The first, second, third, and fifth layers that constitute each color of light-emitting device are formed in separate processes. Therefore, each EL layer can be manufactured with a configuration (material, film thickness, etc.) suitable for each color of light-emitting device. This makes it possible to manufacture light-emitting devices with good characteristics.

[0371] This embodiment can be combined with other embodiments as appropriate.

[0372] (Embodiment 4) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 20 and 21.

[0373] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0374] [Display device 100D] Figure 20 shows a perspective view of the display device 100D, and Figure 21A shows a cross-sectional view of the display device 100D.

[0375] The display device 100D has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 20, substrate 152 is clearly indicated by a dashed line.

[0376] The display device 100D includes a display unit 162, a circuit 164, wiring 165, etc. Figure 20 shows an example in which IC 173 and FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in Figure 20 can also be described as a display module having the display device 100D, an IC (integrated circuit), and an FPC.

[0377] For example, a scan line drive circuit can be used as circuit 164.

[0378] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0379] Figure 20 shows an example in which IC 173 is provided on the substrate 151 using the COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100D and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using the COF method or the like.

[0380] Figure 21A shows an example of a cross-section of the display device 100D when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, and a portion of the area including the end are cut.

[0381] The display device 100D shown in Figure 21A has transistors 201 and 205, light-emitting devices 130a and 130e, etc., between substrates 151 and 152. Light-emitting device 130a emits, for example, red, green, or blue light. Light-emitting device 130e emits, for example, white light.

[0382] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting device that emits a different color from the others, examples of these three subpixels include subpixels of three colors: R, G, and B; and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0383] The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 21A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, demonstrating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), demonstrating a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0384] The light-emitting device 130a has a laminated structure similar to the light-emitting device 130a shown in Figure 15B, and the light-emitting device 130e has a laminated structure similar to the light-emitting device 130e shown in Figure 15B. Details of the light-emitting devices can be found in Embodiment 3. The ends of the light-emitting device 130a and the ends of the light-emitting device 130e are covered by a protective layer 131.

[0385] The pixel electrode 111a is connected to the conductive layer 222b of the transistor 205 through an opening in the insulating layer 214. The pixel electrode 111e is connected to the conductive layer 222c through an opening in the insulating layer 214. The conductive layer 222c is electrically connected to a switch (see switch SW1 in Figure 3) located outside the display unit 162. The pixel electrode 111e may also be electrically connected to the transistor, and the light-emitting device 130e may be electrically connected to a pixel circuit similar to that of the light-emitting device 130a.

[0386] The ends of the pixel electrodes are covered by an insulating layer 121. The pixel electrodes contain a material that reflects visible light, while the common electrodes contain a material that transmits visible light.

[0387] The light emitted by the light-emitting device is projected onto the substrate 152. Therefore, it is preferable to use a material with high transparency to visible light for the substrate 152.

[0388] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 2.

[0389] Transistors 201 and 205 are both formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0390] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0391] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0392] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0393] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100D. This prevents impurities from entering through the organic insulating film from the edge of the display device 100D. Alternatively, the organic insulating film may be formed so that its edge is inward from the edge of the display device 100D, so that the organic insulating film is not exposed at the edge of the display device 100D.

[0394] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0395] In the region 228 shown in Figure 21A, an opening is formed in the insulating layer 214. This prevents impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 100D can be improved.

[0396] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0397] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0398] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0399] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0400] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region. Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0401] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0402] In particular, it is preferable to use an oxide (also written as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer.

[0403] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio.

[0404] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0405] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0406] Figures 21B and 21C show other examples of transistor configurations.

[0407] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0408] In the transistor 209 shown in Figure 21B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0409] On the other hand, in the transistor 210 shown in Figure 21C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 21C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 21C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0410] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via a conductive layer 166 and a connecting layer 242. The conductive layer 166 is shown as an example of a conductive film obtained by processing the same conductive film as the pixel electrode. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and FPC 172 to be electrically connected via the connecting layer 242.

[0411] It is preferable to provide a light-shielding layer 148 on the surface of the substrate 152 that faces the substrate 151. Various optical components can also be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 152.

[0412] By providing a protective layer 131 that covers the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0413] In the region 228 near the edge of the display device 100D, it is preferable that the insulating layer 215 and the protective layer 131 are in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating films are in contact with each other. This makes it possible to suppress the entry of impurities into the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100D can be improved.

[0414] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 151 or substrate 152.

[0415] Substrates 151 and 152 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 151 and 152 may be made of glass of a thickness sufficient to provide flexibility.

[0416] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0417] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0418] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0419] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0420] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0421] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0422] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0423] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0424] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0425] This embodiment can be combined with other embodiments as appropriate.

[0426] (Embodiment 5) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0427] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0428] Furthermore, metal oxides can be formed by methods such as sputtering, chemical vapor deposition (CVD) methods including metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0429] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0430] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0431] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0432] Furthermore, the crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0433] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0434] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0435] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0436] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0437] Furthermore, in In-M-Zn oxides (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Also, the In layer may contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0438] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0439] Furthermore, for example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0440] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction, and the bond distance between atoms changes due to the substitution of metal atoms.

[0441] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0442] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0443] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0444] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0445] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0446] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0447] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0448] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0449] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0450] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0451] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like manner, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0452] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Furthermore, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be as low as possible. For example, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0453] Furthermore, for example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0454] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0455] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0456] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0457] Furthermore, transistors using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0458] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0459] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0460] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0461] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0462] Furthermore, oxide semiconductor films that are highly intrinsic or substantially highly intrinsic may have a low trap level density due to their low defect level density.

[0463] Furthermore, charges trapped in the trap levels of oxide semiconductors can take a long time to disappear, sometimes behaving like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high trap level density may exhibit unstable electrical properties.

[0464] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0465] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0466] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0467] Furthermore, if an oxide semiconductor contains alkali metals or alkaline earth metals, it may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0468] Furthermore, in oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0469] Furthermore, hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. Hydrogen can then fill these vacancies, generating electrons, which act as carriers. Additionally, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0470] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0471] This embodiment can be combined with other embodiments as appropriate.

[0472] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 22 to 24.

[0473] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0474] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0475] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0476] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0477] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0478] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0479] The electronic device 6500 shown in Figure 22A is a portable information terminal that can be used as a smartphone.

[0480] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0481] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0482] Figure 22B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0483] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0484] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0485] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0486] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0487] Figure 23A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0488] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0489] The television device 7100 shown in Figure 23A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0490] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0491] Figure 23B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0492] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0493] Figures 23C and 23D show examples of digital signage.

[0494] The digital signage 7300 shown in Figure 23C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0495] Figure 23D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0496] In Figures 23C and 23D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0497] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0498] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0499] Furthermore, as shown in Figures 23C and 23D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0500] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0501] The electronic equipment shown in Figures 24A to 24F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0502] The electronic devices shown in Figures 24A to 24F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0503] Details of the electronic equipment shown in Figures 24A to 24F will be explained below.

[0504] Figure 24A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 24A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0505] Figure 24B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0506] Figure 24C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0507] Figures 24D to 24F are perspective views showing a foldable personal information terminal 9201. Figure 24D shows the personal information terminal 9201 in an unfolded state, Figure 24F shows it in a folded state, and Figure 24E shows a perspective view of the state in between, transitioning from one of Figures 24D or 24F to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0508] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0509] CL: wiring, Cs: capacitive element, IRS: light receiving device, M11: transistor, M12: transistor, M13: transistor, M14: transistor, M15: transistor, PD1: light receiving device, PD2: light receiving device, RS: wiring, SE: wiring, SW: wiring, TX: wiring, VCP: wiring, VPI: wiring, VRS: wiring, WX: wiring, 10: electronic equipment, 12: support, 14: desk, 20: functional circuit, 31B: light, 31G: light, 31IR: infrared light, 31R: light, 31W: light, 32G: reflected light, 32IR: reflected light, 100A: display device, 100B: surface Display device, 100C: display device, 100D: display device, 100: display device, 101: layer, 102: substrate, 103: housing, 104: light source, 105: protective member, 106: substrate, 108: object, 110a: sub-pixel, 110b: sub-pixel, 110c: sub-pixel, 110d: sub-pixel, 110e: sub-pixel, 110: pixel, 111a: pixel electrode, 111b: pixel electrode, 111c: pixel electrode, 111d: pixel electrode, 111e: pixel electrode, 113a: first layer, 113b: second layer, 113c: third layer, 113d: fourth layer, 113e: fifth layer, 114: sixth layer, 115 : Common electrode, 118A: First sacrificial layer, 118a: First sacrificial layer, 118B: First sacrificial layer, 118b: First sacrificial layer, 118c: First sacrificial layer, 118d: First sacrificial layer, 118e: First sacrificial layer, 119A: Second sacrificial layer, 119a: Second sacrificial layer, 119B: Second sacrificial layer, 119b: Second sacrificial layer, 119c: Second sacrificial layer, 119d: Second sacrificial layer, 119e: Second sacrificial layer, 119: Resin layer, 120: Substrate, 121: Insulating layer, 123: Conductive layer, 130a: Light-emitting device, 130B: Light-emitting device, 130b: Light-emitting device, 130c: Light-emitting Device, 130e: Light-emitting device, 130G: Light-emitting device, 130R: Light-emitting device, 130W: Light-emitting device, 131: Protective layer, 133: Gap, 140: Connection part, 142: Adhesive layer, 148: Light-shielding layer, 150d: Light-receiving device, 150IRS: Light-receiving device, 150PS: Light-receiving device, 151: Substrate, 152: Substrate, 162: Display part, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 180A: Pixel, 180B: Pixel, 181A: First hole injection layer, 181a: First hole injection layer, 181B: Second hole injection layer,181b: Second hole injection layer, 181c: Third hole injection layer, 182A: First hole transport layer, 182a: First hole transport layer, 182B: Second hole transport layer, 182b: Second hole transport layer, 182c: Third hole transport layer, 182d: Fourth hole transport layer, 183A: First light-emitting layer, 183a: First light-emitting layer, 183B: Second light-emitting layer, 183b: Second light-emitting layer, 183c: Third light-emitting layer, 184A: First electron transport layer, 184a: First electron transport layer, 184B: Second electron transport layer, 184b: Second electron transport layer, 184c: Third electron transport layer, 184d: Fourth Electron transport layer, 185d: Active layer, 190a: Resist mask, 190b: Resist mask, 191e: Intermediate layer, 192e: First light-emitting unit, 194e: Second light-emitting unit, 201: Transistor, 204: Connector, 205: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 222c: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231i: Channel formation region, 231n: Low-resistance region, 231: Semiconductor layer, 242: Connecting layer, 500: Display device, 501: Electrode, 502: Electrode, 503: Region, 512B: Light-emitting unit, 512B_1: Light-emitting unit, 512B_2: Light-emitting unit, 512B_3: Light-emitting unit, 512G: Light-emitting unit, 512G_1: Light-emitting unit, 512G_2: Light-emitting unit, 512G_3: Light-emitting unit, 512Q_1: Light-emitting unit, 512Q_2: Light-emitting unit, 512Q_3: Light-emitting unit, 512R: Light-emitting unit, 512R_1: Light-emitting unit, 512R_2: Light-emitting unit, 512R_3: Light-emitting unit, 521: layer, 522: layer, 523B: light-emitting layer, 523G: light-emitting layer, 523Q_1: light-emitting layer, 523Q_2: light-emitting layer, 523Q_3: light-emitting layer, 523R: light-emitting layer, 524: layer, 525: layer, 531: intermediate layer, 541: insulating layer, 542: insulating layer, 550B: light-emitting device, 550G: light-emitting device, 550R: light-emitting device, 550W: light-emitting device, 772: electrode, 786a: light-emitting unit, 786b: light-emitting unit, 786: EL layer, 788: electrode, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4430: layer,4440: Intermediate layer, 6500: Electronic equipment, 6501: Enclosure, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 72 13: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. It has a first pixel, an electric double-layer capacitor, and a battery. The first pixel comprises a first light-emitting device, a second light-emitting device, and a first light-receiving device. The second light-emitting device has the function of emitting white light, The first light-emitting device has the function of emitting visible light of a different color from the second light-emitting device. The first light-receiving device has the function of detecting the light emitted by the first light-emitting device. The distance between the first light-emitting device and the first light-receiving device is greater than the distance between the first light-emitting device and the second light-emitting device. The second light-emitting device is electrically connected to the electric double-layer capacitor, The electric double layer capacitor is electrically connected to the battery. electronic equipment.

2. In claim 1, Having a second pixel, The second pixel comprises the first light-emitting device, the first light-receiving device, and the second light-receiving device. The second light-receiving device has the function of detecting infrared light. electronic equipment.

3. In claim 1 or claim 2, The light-emitting device XL1 has the function of emitting red, green, or blue light. electronic equipment.

4. In claim 3, It has a third light-emitting device, The third light-emitting device is an electronic device having the function of emitting infrared light.

Images