Semiconductor equipment

Abstract

To provide a display device with a structure suitable as a protection circuit, and a method for stabilizing an operation by increasing a function of the protection circuit.SOLUTION: A protection circuit is formed using a nonlinear element 170a including a gate insulating layer 102 that covers a gate electrode 101, a first oxide semiconductor layer 103 that overlaps with the gate electrode 101 on the gate insulating layer 102, a channel protection layer that covers a region overlapping with a channel formation region in the first oxide semiconductor layer 103, and a pair of a first wiring layer 38 and a second wiring layer 39 in which an end part overlaps with the gate electrode on the channel protection layer and a second oxide semiconductor layer 104a and a conductive layer 105a are stacked. By forming a junction between the oxide semiconductor layers with different physical properties on the gate insulating layer 102, a stable operation becomes possible as compared to Schottky junction, junction leakage is reduced, and characteristics of the nonlinear element 170a can be improved.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a display device using an oxide semiconductor.

Background Art

[0002] Thin film transistors formed on a flat plate such as a glass substrate, as typified by liquid crystal display devices, are made of amorphous silicon or polycrystalline silicon. Although thin film transistors using amorphous silicon have a low field-effect mobility, they can respond to the enlargement of the area of the glass substrate. On the other hand, thin film transistors using crystalline silicon have a high field-effect mobility, but require a crystallization process such as laser annealing and do not necessarily adapt to the enlargement of the area of the glass substrate. On the contrary, a technique of manufacturing a thin film transistor using an oxide semiconductor and applying it to electronic devices and optical devices

[0003] has been attracting attention. For example, a technique of manufacturing a thin film transistor using zinc oxide (ZnO) or an In-Ga-Zn-O-based oxide semiconductor as an oxide semiconductor film and using it for a switching element of an image display device is disclosed in Patent Document 1 and Patent Document 2.

Prior Art Documents

[0006] To take advantage of the characteristics of display devices using oxide semiconductors, which have excellent operating characteristics and can be manufactured at low temperatures, A protective circuit with a specific configuration is required. Furthermore, the reliability of display devices using oxide semiconductors is also a concern. It becomes important to guarantee sexual safety.

[0007] One aspect of the present invention aims to provide a structure suitable as a protective circuit.

[0008] One aspect of the present invention relates to various applications where an oxide semiconductor is fabricated by laminating an insulating film and a conductive film. One of the objectives of this display device is to enhance the function of the protection circuit and stabilize its operation. [Means for solving the problem]

[0009] One aspect of the present invention is a protection circuit formed by a nonlinear element made of an oxide semiconductor. This is a display device. This nonlinear element is constructed by combining oxide semiconductors with different oxygen content. It has been done.

[0010] An exemplary aspect of the present invention is a substrate having an insulating surface on which scanning lines and signal lines intersect. Therefore, the pixel portion has pixel electrodes arranged in a matrix, and the outer region of the pixel portion is made of an oxide semiconductor. This is a display device having a formed nonlinear element. The pixel portion is channeled in the first oxide semiconductor layer. It has a thin-film transistor in which a channel formation region is formed. The thin-film transistor in the pixel portion is scanned a gate electrode connected to a line, a first wiring layer connected to a signal line and contacting a first oxide semiconductor layer, and a second wiring layer connected to a pixel electrode and contacting a first oxide semiconductor layer. A non-linear element is provided between a signal input terminal provided in a peripheral portion of the substrate and the pixel portion. The non-linear element includes a gate electrode and a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping the gate electrode on the gate insulating layer, a channel protection layer covering a region overlapping a channel formation region of the first oxide semiconductor layer, and a pair of first wiring layers and second wiring layers in which a conductive layer and a second oxide semiconductor layer are laminated and whose ends overlap the gate electrode on the channel protection layer. The gate electrode of the non-linear element is connected to a scanning line or a signal line, and the first wiring layer or the second wiring layer of the non-linear element is connected by a third wiring layer so that the potential of the gate electrode is applied. The gate electrode of the non-linear element is connected to a scanning line or a signal line, and the first wiring layer or the second wiring layer of the non-linear element is connected by a third wiring layer so that the potential of the gate electrode is applied. The gate electrode of the non-linear element is connected to a scanning line or a signal line, and the first wiring layer or the second wiring layer of the non-linear element is connected by a third wiring layer so that the potential of the gate electrode is applied. to be.

[0011] An exemplary aspect of the present invention is a display device in which scanning lines and signal lines are provided to intersect on a substrate having an insulating surface, a pixel portion in which pixel electrodes are arranged in a matrix, and a protection circuit in an outer region of the pixel portion. The pixel portion has a thin-film transistor in which a channel formation region is formed in a first oxide semiconductor layer. The thin-film transistor in the pixel portion has a gate electrode connected to a scanning line, a first wiring layer connected to a signal line and contacting a first oxide semiconductor layer, and a second wiring layer connected to a pixel electrode and contacting a first oxide semiconductor layer. In an outer region of the pixel portion, a protection circuit connecting a common wiring to a scanning line and a protection circuit connecting a common wiring to a signal line are provided. The pixel portion has a thin-film transistor in which a channel formation region is formed in a first oxide semiconductor layer. The thin-film transistor in the pixel portion has a gate electrode connected to a scanning line, a first wiring layer connected to a signal line and contacting a first oxide semiconductor layer, and a second wiring layer connected to a pixel electrode and contacting a first oxide semiconductor layer. In an outer region of the pixel portion, a protection circuit connecting a common wiring to a scanning line and a protection circuit connecting a common wiring to a signal line are provided. a first wiring layer connected to a signal line and contacting a first oxide semiconductor layer, and a second wiring layer connected to a pixel electrode and contacting a first oxide semiconductor layer. In an outer region of the pixel portion, a protection circuit connecting a common wiring to a scanning line and a protection circuit connecting a common wiring to a signal line are provided. In an outer region of the pixel portion, a protection circuit connecting a common wiring to a scanning line and a protection circuit connecting a common wiring to a signal line are provided. The protection circuit includes a gate electrode and a gate insulating layer covering the gate electrode, and the gate insulating layer ​​​​​​​Above, a first oxide semiconductor layer that overlaps with the gate electrode, and a channel protection layer that covers a region overlapping with the channel formation region of the first oxide semiconductor layer, and a pair of first wiring layers and second wiring layers in which the end portions overlap with the gate electrode and a conductive layer and a second oxide semiconductor layer are laminated. The non-linear element has a non-linear element. The gate electrode of the non-linear element and the first wiring layer or the second wiring layer are connected by a third wiring layer.

[0012] Here, the oxygen concentration of the first oxide semiconductor layer is higher than that of the second oxide semiconductor layer. That is, the first oxide semiconductor layer is oxygen-excessive, and the second oxide semiconductor layer is oxygen-deficient. The electrical conductivity of the first oxide semiconductor layer is lower than that of the second oxide semiconductor layer. The first oxide semiconductor layer and the second oxide semiconductor layer have a non-single crystal structure and contain at least an amorphous component. Further, the second oxide semiconductor layer may contain nanocrystals in an amorphous structure.

[0013] The ordinal numbers attached as the first and the second are used for convenience and do not indicate the process order or the lamination order. Also, the names peculiar to the matters for specifying the invention in this specification are not indicated.

Advantages of the Invention

[0014] According to one aspect of the present invention, by configuring a protection circuit with a non-linear element using an oxide semiconductor, a display device having a structure suitable as a protection circuit can be obtained. In the connection structure between the first oxide semiconductor layer and the wiring layer of the non-linear element, by providing a region joined to the second oxide semiconductor layer having a higher electrical conductivity than the first oxide semiconductor layer, compared with the case of only a metal wiring This allows for stable operation. This enhances the function of the protection circuit and stabilizes operation. It can be measured. [Brief explanation of the drawing]

[0015] [Figure 1] A diagram illustrating the positional relationship between the signal input terminals, scan lines, signal lines, protection circuits including nonlinear elements, and pixel sections that constitute a display device. [Figure 2] A diagram showing an example of a protection circuit. [Figure 3] A diagram showing an example of a protection circuit. [Figure 4] A plan view showing an example of a protection circuit. [Figure 5] A cross-sectional view showing an example of a protection circuit. [Figure 6] A plan view showing an example of a protection circuit. [Figure 7] A plan view showing an example of a protection circuit. [Figure 8] A cross-sectional diagram illustrating the manufacturing process of a protective circuit. [Figure 9] A cross-sectional diagram illustrating the manufacturing process of a protective circuit. [Figure 10] Cross-section of an electronic paper display. [Figure 11] A diagram illustrating the block diagram of a semiconductor device. [Figure 12] A diagram illustrating the configuration of a signal line drive circuit. [Figure 13] A timing chart illustrating the operation of a signal line drive circuit. [Figure 14] A timing chart illustrating the operation of a signal line drive circuit. [Figure 15] A diagram illustrating the configuration of a shift register. [Figure 16] Figure 14 illustrates the connection configuration of the flip-flops shown. [Figure 17] A top view and a cross-sectional view illustrating the semiconductor device of the embodiment. [Figure 18] A cross-sectional view illustrating the semiconductor device of the embodiment. [Figure 19] A diagram illustrating the pixel equivalent circuit of the semiconductor device according to the embodiment. [Figure 20] A diagram illustrating a semiconductor device according to an embodiment. [Figure 21] A top view and a cross-sectional view illustrating the semiconductor device of the embodiment. [Figure 22] A diagram illustrating examples of how electronic paper can be used. [Figure 23] An external view showing an example of an e-book. [Figure 24] External view showing examples of television equipment and digital photo frames. [Figure 25] An external view showing an example of a gaming machine. [Figure 26] An external view showing an example of a mobile phone. [Figure 27] A cross-sectional view showing an example of a protection circuit. [Modes for carrying out the invention]

[0016] Embodiments of the present invention will be described below with reference to the drawings. However, the present invention will not be described below. The present invention is not limited to, and its form and details may vary without departing from the spirit and scope of the present invention. Those skilled in the art will readily understand that it can be modified in various ways. Therefore, the present invention is as follows: The present invention is not limited to the descriptions of the embodiments. In this context, symbols that refer to the same thing are used consistently across different drawings.

[0017] (Embodiment 1) This embodiment is one type of display device in which a protection circuit including a nonlinear element is formed around the pixel portion and its periphery. This will be explained with reference to the drawings.

[0018] Figure 1 shows a protection circuit that constitutes a display device, including signal input terminals, scan lines, signal lines, and nonlinear elements. This is a diagram illustrating the positional relationship of the pixel portion. Scan lines 13 and The signal lines 14 intersect to form the pixel section 17.

[0019] The pixel section 17 is composed of multiple pixels 18 arranged in a matrix. The pixels 18 are scanned The pixel transistor 19, retaining capacitance unit 20, and pixel electrode 21 are connected to line 13 and signal line 14. It is composed of including these elements.

[0020] In the pixel configuration illustrated here, the holding capacitance unit 20 has one electrode connected to the pixel transistor 19 This shows the case where one electrode is connected to the other electrode, and the other electrode is connected to the capacitance line 22. Also, the pixel electrode 21 is While driving the display elements (liquid crystal elements, light-emitting elements, contrast media (electronic ink), etc.) These form the electrodes. The other electrode of these display elements is connected to the common terminal 23.

[0021] The protection circuit is located between the pixel unit 17 and the input terminals 11 and 12. In this configuration, multiple protection circuits are provided to prevent static electricity from entering the scan line 13, signal line 14, and capacitive bus line 27. The system is configured to prevent damage to the pixel transistor 19 and other components from surge voltages being applied due to various factors. Therefore, when a surge voltage is applied to the protection circuit, the common wiring 29 or common The wiring 28 is configured to allow electric charge to escape.

[0022] In this configuration, a protection circuit 24 is located on the scan line 13 side, a protection circuit 25 is located on the signal line 14 side, and a capacitive bus line 2 An example is shown in which a protection circuit 26 is provided at 7. However, the configuration of the protection circuit is not limited to this. stomach.

[0023] Figure 2 shows an example of a protection circuit. This protection circuit is arranged in parallel with the scan line 13. It is composed of linear elements 30 and nonlinear elements 31. Child 31 is composed of a two-terminal element such as a diode or a three-terminal element such as a transistor. For example, it is possible to form them using the same process as the pixel transistors in the pixel section, for instance. By connecting the gate terminal and drain terminal, it is possible to give it characteristics similar to those of a diode. It is possible.

[0024] The first terminal (gate) and third terminal (drain) of the nonlinear element 30 are connected to the scan line 13. The second terminal (source) is connected to the common wiring 29. Also, the first terminal of the nonlinear element 31 is connected to the common wiring 29. The gate and the third terminal (drain) are connected to the common wiring 29, and the second terminal (source) is connected to the running It is connected to line 13. In other words, the protection circuit shown in Figure 2 is connected to the two transistors. Each of them connects the scan line 13 and the common wiring 29 with the rectification direction facing in opposite directions. Yes, there is. In other words, between scan line 13 and common wiring 29, the rectification direction is from scan line 13 to common wiring 29. The transistor heading towards wiring 29 and the transistor whose rectification direction is from common wiring 29 towards scan line 13 This configuration involves connecting the ZISTA.

[0025] The protection circuit shown in Figure 2 is configured to protect the common wiring 29 when the scan line 13 is positively or negatively charged due to static electricity, etc. When an electric charge is applied, a current flows in the direction that cancels out that charge. For example, if scan line 13 is positively charged If this occurs, current flows in the direction that releases the positive charge into the common wiring 29. This action causes the band Electrostatic discharge or threshold voltage failure of the pixel transistor 19 connected to the charged scan line 13 This prevents the scan line 13 from intersecting with the charged scan line 13 via the insulating layer. This prevents dielectric breakdown of the insulating film between the wiring and other wiring.

[0026] Figure 2 shows a nonlinear element 30 with the first terminal (gate) connected to the scan line 13, and a common wiring 2 A nonlinear element 31 with the first terminal (gate) connected to 9, that is, two elements with opposite rectification directions. Using a set of nonlinear elements, a common distribution is made between the second terminal (source) and the third terminal (drain) of each element. Line 29 and scan line 13 are connected. That is, nonlinear element 30 and nonlinear element 31 are in parallel. As another configuration, a nonlinear element is added in parallel to further control the movement of the protection circuit. The stability of the operation may be improved. For example, Figure 3 shows the connection between the scan line 13 and the common wiring 29. By using the nonlinear elements 30a and 30b and the nonlinear elements 31a and 31b The configured protection circuit is shown. This protection circuit connects the first terminal (gate) to the common wiring 29. The two nonlinear elements (30b, 31b) are connected to the first terminal (gate) of the scan line 13. It uses a total of four nonlinear elements, including two nonlinear elements (30a and 31a). That is, A pair of two nonlinear elements connected so that their rectification directions are opposite to each other is connected to a common wiring 29. There are two sets connected between scan lines 13. In other words, between scan line 13 and common wiring 29, Two transistors whose rectification direction is from scan line 13 to common wiring 29, and whose rectification direction is common This configuration connects two transistors that go from wiring 29 to scan line 13. By connecting the common wiring 29 and the scan line 13 with four nonlinear elements, surges are prevented from reaching the scan line 13. This occurs not only when voltage is applied, but also when the common wiring 29 is charged by static electricity, etc. This prevents the charge from flowing directly into scan line 13. Figure 6 shows the arrangement of four nonlinear elements 740a, 740b, 740c, and 740d on the substrate. One embodiment of the case is shown along with an equivalent circuit diagram. 650 is a scan line, and 651 is a common line. .

[0027] Furthermore, as an example of a protection circuit using an odd number of nonlinear elements, an example of the arrangement of nonlinear elements on a substrate is shown. Figure 7(A) shows the equivalent circuit diagram, and Figure 7(B) shows the equivalent circuit diagram. In this circuit, for the nonlinear element 730c Nonlinear elements 730b and 730a are connected as switching elements. By connecting nonlinear elements in series as shown, the instantaneous reaction applied to the nonlinear elements constituting the protection circuit Intermediate loads can be distributed. 650 is a scan line, and 651 is a common line.

[0028] Figure 2 shows an example of a protection circuit installed on the scan line 13 side, but a similar protection circuit can be installed on the signal line 14 It can also be applied to the other side.

[0029] Figure 4(A) is a plan view showing an example of a protection circuit, and Figure 4(B) shows its equivalent circuit diagram. Furthermore, Figure 5 shows a cross-sectional view corresponding to the Q1-Q2 cutting line shown in Figure 4(A). The explanation will describe an example of a protection circuit configuration with reference to Figures 4 and 5.

[0030] The nonlinear elements 170a and 170b are gates formed in the same layer as the scan line 13. It has an electrode 101 and a gate electrode 16. On the gate electrode 101 and the gate electrode 16 A gate insulating layer 102 is formed thereon. A first oxide semiconductor layer is formed on the gate insulating layer 102. 103 is formed, and a channel is formed on the gate electrode 101 via the first oxide semiconductor layer 103. A protective layer is formed. Furthermore, the first wiring layer 38 and are positioned opposite each other on the channel protective layer. A second wiring layer 39 is provided. The gate insulating layer 102 and the channel protective layer are made of oxide It is formed from an oxide such as aluminum oxide or a ricon. The nonlinear element 170b has the same configuration in its main parts.

[0031] The first oxide semiconductor layer 103 is gated below the opposing first wiring layer 38 and second wiring layer 39. It is provided so as to cover the gate electrode 101 via an insulating film. That is, the first oxide The semiconductor layer 103 is superimposed on the gate electrode 101 and on the upper surface of the gate insulating layer 102 and the second oxide It is provided so as to be in contact with the lower surfaces of the material semiconductor layers 104a and 104b. Here, 1. Wiring layer 38 is connected to the second oxide semiconductor layer 104a and the conductive layer from the first oxide semiconductor layer 103 side. It has a stacked configuration of 105a. Similarly, the second wiring layer 39 is the first oxide semiconductor layer The structure has a configuration in which a second oxide semiconductor layer 104b and a conductive layer 105b are stacked from the 103 side. ru.

[0032] The oxygen concentration of the first oxide semiconductor layer 103 is the same as that of the second oxide semiconductor layer (104a and 104b). It has a higher oxygen concentration than [another type]. In other words, the first oxide semiconductor layer 103 is oxygen-rich type Therefore, the second oxide semiconductor layer (104a and 104b) is oxygen-deficient. By increasing the oxygen concentration in the semiconductor layer 103, donor-type defects can be reduced. This results in improved rear lifetime and mobility. The body layers (104a and 104b) have a lower oxygen concentration compared to the first oxide semiconductor layer 103. This increases the carrier concentration and forms the source and drain regions. It can be used for that purpose.

[0033] Structurally, the oxide semiconductor contains In, Ga, Zn, and O in the first oxide semiconductor layer 103. It is a non-single-crystal oxide semiconductor layer and contains at least an amorphous component. The second oxide semiconductor layer (104a and 104b) contains non-oxides including In, Ga, Zn, and O. In the case of a single-crystal oxide semiconductor layer, nanocrystals are included within the non-single-crystal structure. Yes. And the first oxide semiconductor layer 103 is the second oxide semiconductor layer (104a and 104 It has the characteristic of having lower electrical conductivity than b). Therefore, the nonlinear element 1 of this embodiment In 70a and the nonlinear element 170b, the second oxide semiconductor layer (104a and 104b) It exhibits functions similar to the source and drain regions of a transistor. The second oxide semiconductor layer 104a and the second oxide semiconductor layer 104b which becomes the drain region are , has an n-type conductivity, and its activation energy (ΔE) is between 0.01 eV and 0.1 eV. Yes, n + It could also be called a domain.

[0034] The first oxide semiconductor layer 103 and the second oxide semiconductor layers (104a and 104b) are oxidized Typical semiconductor materials include zinc oxide (ZnO) or oxides containing In, Ga, and Zn. It is formed from semiconductor materials.

[0035] The second oxide semiconductor layer (104a and 104b) is composed of the first oxide semiconductor layer 103 and the conductive layer (1 In contact with 05a and 105b), and provided between them, the contact between oxide semiconductor layers with different physical properties A bond is formed between the first oxide semiconductor layer and the conductive layer. By providing a second oxide semiconductor layer (104a and 104b) with high electrical conductivity, Compared to a Schottky junction where the first oxide semiconductor layer and the conductive layer are in direct contact, this method provides a more stable nonlinear element. It becomes possible to operate it steadily. In other words, thermal stability is increased, and stable operation is possible. This makes it possible to enhance the function of the protection circuit and stabilize its operation. Furthermore, junction leakage is reduced, improving the characteristics of the nonlinear element 170a and the nonlinear element 170b. It is possible.

[0036] A protective insulating film 107 is provided on the first oxide semiconductor layer 103. It is formed from oxides such as silicon oxide or aluminum oxide. Or silicon nitride, aluminum nitride, silicon oxide nitride or oxide on aluminum oxide By layering aluminum nitride, the protective film's functionality can be further enhanced.

[0037] In any case, the protective insulating film 107 in contact with the first oxide semiconductor layer 103 is made of oxide. As a result, oxygen is extracted from the first oxide semiconductor layer 103, causing it to degrade into an oxygen-deficient type. This can prevent the above. Also, the first oxide semiconductor layer 103 is directly connected to the nitride insulating layer. By creating a configuration that does not come into contact with the first oxide semiconductor layer 103, hydrogen in the nitride diffuses into the first oxide semiconductor layer 103. This can prevent the formation of defects caused by acid groups and other factors.

[0038] The protective insulating film 107 is provided with contact holes 125 and 128, and the gate electric The scan line 13 is formed in the same layer as pole 101, and the third terminal (drain) of the nonlinear element 170a. ) is connected to the third wiring layer 1, which is made of the same material as the pixel electrodes of the pixel portion. It is formed in 10. The third wiring layer 110 is indium tin oxide (ITO). Transparent conductive films such as tin oxide, zinc oxide (ZnO), and tin oxide (SnO2) It is formed from this. As a result, the third wiring layer 110 has high resistance compared to wiring formed from metal material. This will result in resistance. By including wiring containing such resistance components in the protection circuit, excessive resistance will be reduced. This prevents excessive current from flowing and destroying the nonlinear element 170a.

[0039] Figures 4 and 5 show an example of a protection circuit provided on scan line 13, but similar protection circuits... The road can be applied to signal lines, capacity bus lines, and so on.

[0040] Thus, according to this embodiment, a protection circuit made of an oxide semiconductor is provided. This makes it possible to obtain a display device with a structure suitable as a protective circuit. This enhances the functionality of the protection circuit and improves operational stability.

[0041] (Embodiment 2) This embodiment shows one aspect of the manufacturing process of the protection circuit shown in Figure 4(A) in Embodiment 1, as shown in Figure 8. This will be explained with reference to Figure 9. Figures 8 and 9 correspond to the Q1-Q2 cutting line in Figure 4(A). This shows a cross-sectional view.

[0042] In Figure 8(A), the translucent substrate 100 is made of commercially available barium borosilicate Using glass substrates such as glass, aluminoborosilicate glass, and aluminosilicate glass. It is possible. For example, in terms of component ratio, barium oxide (Ba) is better than boric acid (B2O3). It is preferable to use a glass substrate that contains a large amount of O) and has a strain point of 730°C or higher. This is because the glass substrate does not become distorted even when the layer is heat-treated at a high temperature of around 700°C. .

[0043] Next, after forming a conductive layer over the entire surface of the substrate 100, the first photolithography process is performed. A resist mask is formed, and unnecessary parts are removed by etching to create wiring and electrodes (gauges). Gate wiring, capacitive wiring, and terminals including electrode 101 are formed. The gate electrode 101 is etched so that a tapered shape is formed at its end.

[0044] The gate wiring including gate electrode 101, the capacitance wiring, and the terminals of the terminal section are made of aluminum (Al). It is preferable to form it with low-resistance conductive materials such as copper (Cu), but Al alone has heat resistance. Because it has inferior properties and is prone to corrosion, it is formed in combination with a heat-resistant conductive material. Examples of heat-resistant conductive materials include titanium (Ti), tantalum (Ta), and tungsten (W). ), molybdenum (Mo), chromium (Cr), Nd (neodymium), Sc (scandium) The selected elements, or alloys containing the above-mentioned elements, or combinations of the above-mentioned elements. It is formed from an alloy film or a nitride containing the aforementioned elements.

[0045] Next, a gate insulating layer 102 is formed over the entire surface of the gate electrode 101. Method 2 involves using sputtering or similar techniques to achieve a film thickness of 50-250 nm.

[0046] For example, a silicon oxide film is used as the gate insulating layer 102 by sputtering, and the size is 100 nm. It is formed to this thickness. Of course, the gate insulating layer 102 is limited to such a silicon oxide film. Not a material, but silicon oxide nitride film, silicon nitride film, aluminum oxide, tantalum oxide film Other insulating films may be used, and these materials may be used to form a single-layer or multilayer structure. stomach.

[0047] Next, the gate insulating layer 102 is subjected to plasma treatment before the formation of the first oxide semiconductor film. Here, inverse sputtering is performed by introducing oxygen gas and argon gas into the deposition chamber to generate plasma. Next, the gate insulating layer is irradiated with oxygen radicals or oxygen. In this way, the ions adhering to the surface are removed. The ions are removed, and the surface of the gate insulating layer is further modified to an oxygen-rich region. Performing oxygen radical treatment to create an oxygen-rich region on the surface improves reliability in subsequent processes. During the heat treatment for the above (200°C to 600°C), the gate insulating layer and the first oxide semiconductor layer This is effective in creating an oxygen source for modifying the interface.

[0048] The gate insulating layer 102, the first oxide semiconductor film, and the insulating film that forms the channel protective layer are spa By appropriately switching the gas introduced into the chamber and the target installed in the method, The gate insulating layer, the first oxide semiconductor film, and the channel protective layer are connected without being exposed to the atmosphere. Continuous film deposition is possible. Continuous film deposition without exposure to the atmosphere prevents the inclusion of impurities. This is possible. When continuously depositing films without exposure to the atmosphere, a multi-chamber type manufacturing apparatus is used. It is preferable to use it.

[0049] In particular, the gate insulating layer 102 in contact with the first oxide semiconductor film and the first oxide semiconductor film are continuous. It is desirable to form a film. Continuous film formation allows for the removal of atmospheric components such as water vapor and airborne particles. Since it is possible to form a laminated interface free from contamination by pure elements and dust, nonlinear elements and thin film transistors can be formed. This can reduce variations in the characteristics of the inverter.

[0050] In this specification, continuous film deposition refers to the process from the first film deposition step performed by sputtering to the process performed by sputtering. During the series of processes up to the second film deposition step, the atmosphere in which the substrate to be processed is placed is such as air. Always in a vacuum or inert gas atmosphere (nitrogen atmosphere or dilute gas atmosphere) without exposure to contaminated atmospheres. This refers to the control of the atmosphere (gas atmosphere). By performing continuous film deposition, the cleaned surface This allows for film formation while avoiding the re-adhesion of moisture and other substances to the processed substrate.

[0051] After the gate insulating layer 102 is plasma-treated, the plasma-treated substrate is not exposed to the atmosphere. A first oxide semiconductor film is formed. The plasma-treated substrate is not exposed to the atmosphere. By forming a semiconductor film, dust and moisture adhere to the interface between the gate insulating layer and the semiconductor film. This prevents the following problems. Here, a diameter of 8 inches is included in In, Ga, and Zn. Oxide semiconductor target (composition ratio: In2O3:Ga2O3:ZnO=1:1:1) Using a 3D converter, the distance between the substrate and the target was set to 170 mm, the pressure to 0.4 Pa, and the current to DC. The film is deposited using a 0.5kW power supply under an oxygen atmosphere. This is preferable because it reduces dust and ensures a uniform film thickness distribution. The film thickness of the first oxide semiconductor film is The film thickness is set to 5nm to 200nm. In this embodiment, the film thickness of the first oxide semiconductor film is 100nm. Let m be the value.

[0052] The first oxide semiconductor film is formed by using different deposition conditions than those for the second oxide semiconductor film. It has a different composition from the semiconductor film. For example, it has a higher oxygen concentration than the dioxide semiconductor film. Oxygen is incorporated into the first oxide semiconductor film. For example, under the film deposition conditions for the second oxide semiconductor film... The ratio of oxygen gas flow rate to argon gas flow rate is more important than the film deposition conditions for the first oxide semiconductor film. The condition is that the oxygen gas flow rate accounts for a large proportion. Specifically, the deposition strip of the oxide semiconductor film. The matter concerns a noble gas atmosphere (such as argon or helium) (or oxygen gas at 10% or less). The oxygon gas concentration should be 90% or higher, and the deposition conditions for the first oxide semiconductor film should be under an oxygen atmosphere (or acid The elementary gas flow rate is greater than or equal to the argon gas flow rate, and the ratio is 1:1 or greater. By incorporating it into the first oxide semiconductor film, the conductivity is lower than that of the second oxide semiconductor film. This can be achieved by incorporating a large amount of oxygen into the first oxide semiconductor film. This allows for a reduction in off-current, making it possible to obtain thin-film transistors with a high on / off ratio. It is possible.

[0053] Furthermore, the deposition of the first oxide semiconductor film was performed in the same chamber as the reverse sputtering performed earlier. You can use - or if it is possible to deposit the film without exposing it to the atmosphere, you can perform reverse sputtering first. The film may be deposited in a different chamber than the one used for deposition.

[0054] Next, an insulating film that will serve as a channel protection layer is deposited on the first oxide semiconductor film, following the deposition of the semiconductor film. Then, continuous film deposition is performed. By continuous film deposition, the opposite side of the semiconductor film is the side that is in contact with the gate insulating film. In this region, the so-called back channel, atmospheric components such as water vapor and impurity elements suspended in the atmosphere, and Since a laminated interface free from contamination by microorganisms can be formed, variations in the characteristics of nonlinear elements can be reduced. It can be reduced.

[0055] This system includes silicon oxide (artificial quartz) targets and targets for oxide semiconductor films. Using a multi-chamber sputtering apparatus, the first oxide semiconductor formed in the previous step was processed A silicon oxide film is formed as a channel protective layer without exposing the body membrane to the atmosphere.

[0056] Next, using the resist mask formed using the second photomask in this embodiment The silicon oxide film formed on the first oxide semiconductor film is selectively etched to protect the channel. Forms layer 133.

[0057] Next, the second oxide semiconductor film is spat onto the channel protection layer 133 and the first oxide semiconductor film. The film is deposited using the dermatological method. Here, an 8-inch diameter indium oxide (In2O3) and gas oxide are used. The composition ratio of lium (Ga2O3) and zinc oxide (ZnO) is 1:1:1 (=In2O3:G Using a target made of a2O3:ZnO, the distance between the substrate and the target was set to 170 The film deposition temperature was set to room temperature, with a thickness of mm, a pressure of 0.4 Pa, a DC power supply of 0.5 kW, and argon gas. Sputter deposition is performed by introducing a sputter flow rate of 40 sccm. This results in a second oxide semiconductor film and Then, a semiconductor film composed of In, Ga, Zn, and oxygen is formed. The composition ratio is 1:1: Even though a target with a composition of 1 (=In2O3:Ga2O3:ZnO) is intentionally used, However, immediately after deposition, oxide semiconductor films often contain crystal grains with a size of 1 nm to 10 nm. This is achieved. The target component ratio, deposition pressure (0.1 Pa to 2.0 Pa), and power (2 50W~3000W (8-inch diameter), temperature (room temperature~100℃), reactive sputtering film deposition strip By adjusting the parameters as appropriate, the presence or absence of crystal grains, the density of crystal grains, and the diameter size can be changed from 1 nm to It can be said that it can be adjusted within a range of 10 nm. The thickness of the 2 oxide semiconductor film is 5 nm to 20 nm. Let m be the size of the film. Of course, if the film contains crystal grains, the size of the contained crystal grains will exceed the film thickness. The size is not the same. In this embodiment, the thickness of the second oxide semiconductor film is set to 5 nm.

[0058] Next, a third photolithography process is performed to form a resist mask, and the first oxide semiconductor is formed. The conductive film and the second oxide semiconductor film are etched. Here, ITO07N (Kanto Chemical Co., Ltd.) is used. Unnecessary parts are removed by wet etching using (manufactured by) the first oxide semiconductor layer 10 3 and the second oxide semiconductor layer 111 are formed. Note that etching here is wet etching. Etching is not the only method; dry etching may also be used. A cross-sectional view at this stage is shown in Figure 8. This is shown in B).

[0059] Next, a conductive film made of a metallic material is placed on the second oxide semiconductor layer 111 and the gate insulating layer 102. The conductive film 132 is formed by sputtering or vacuum deposition. The material for the conductive film 132 is Al, Cr , elements selected from Ta, Ti, Mo, W, or alloys containing the above elements, Examples include alloy films combining the elements described above.

[0060] Furthermore, when heat treatment is performed at 200°C to 600°C, the conductive film must have sufficient heat resistance to withstand this heat treatment. It is preferable to have it in place. Al alone has problems such as poor heat resistance and susceptibility to corrosion. Therefore, it is formed in combination with a heat-resistant conductive material. Heat-resistant conductive material to be combined with Al The materials used are titanium (Ti), tantalum (Ta), tungsten (W), and molybdenum (M). o), an element selected from chromium (Cr), Nd (neodymium), Sc (scandium), or an alloy composed of the above-mentioned elements, or an alloy film made up of the above-mentioned elements, or the above-mentioned It is formed from a nitride composed of the specified elements.

[0061] Here, the conductive film 132 is a Ti film, and on top of the Ti film is an aluminum film containing Nd. A three-layer structure is formed by stacking (Al-Nd) films and then depositing a Ti film on top of them. The film 132 may have a two-layer structure, or a titanium film may be laminated on an aluminum film. Furthermore, the conductive film 132 may have a single-layer structure of an aluminum film containing silicon, or a single-layer structure of a titanium film. It may also be called a structure. A cross-sectional view at this stage is shown in Figure 8(C).

[0062] Next, a fourth photolithography step is performed to form the resist mask 131, and etching is performed. The conductive film 132 is removed by a process called a smear to form conductive layers 105a and 105b. (See Figure 9(A)). The etching method used in this case is either wet etching or dry etching. A mixing process is used. Here, a mixed gas of SiCl4, Cl2, and BCl3 is used as the reaction gas. By dry etching, the Ti film and the aluminum (Al-Nd) film containing Nd and the Ti film Conductive films, which are sequentially stacked, are etched to form conductive layers 105a and 105b.

[0063] Next, using the same resist mask used in the etching process of the conductive film 132, The oxide 2 semiconductor film exposed between layers 105a and 105b is etched. Unwanted parts are removed by wet etching using ITO07N (manufactured by Kanto Chemical Co., Ltd.). Then a second oxide semiconductor layer (104a, 104b) is formed. Note that etching here is Furthermore, the method is not limited to wet etching; dry etching may also be used. Also, the first oxide The semiconductor layer and the second oxide semiconductor layer dissolve in the same etchant. Therefore, the first oxide semiconductor When a dioxide semiconductor layer is directly stacked on a body layer, only the dioxide semiconductor layer is selectively treated. Etching is difficult. However, in this embodiment, the second oxide semiconductor layer is Because it is formed on the first oxide semiconductor layer with the channel protective layer 133 in between, the second oxide semiconductor There is no risk of the first oxide semiconductor layer 103 being damaged during the etching process of the conductive layer.

[0064] Next, it is preferable to perform heat treatment at 200°C to 600°C, typically 300°C to 500°C. Here, it is placed in a furnace and subjected to a heat treatment at 350°C for 1 hour under a nitrogen atmosphere. This process causes atomic-level rearrangement of the semiconductor film containing In, Ga, and Zn. This process releases the strain that hinders carrier movement, thus preventing heat treatment (including photo-annealing). (including) is important. Note that the timing of the heat treatment is after the deposition of the first oxide semiconductor film. If available, it is not particularly limited and may be performed, for example, after protective film formation. In the above steps, the first oxide semi-finished A nonlinear element 170a can be fabricated with the conductive layer 103 as the channel formation region. A cross-sectional view is shown in Figure 9(A).

[0065] Next, the resist mask is removed to form a protective insulating film 107 covering the nonlinear element 170a. The protective insulating film 107 is a silicon nitride film obtained using a sputtering method, silicon oxide, etc. Films such as silicon oxide-nitride films, aluminum oxide films, and tantalum oxide films can be used. ru.

[0066] Next, a fifth photolithography step is performed to form a resist mask and a protective insulating film 1 Etching of 07 forms contact holes 125 that reach the conductive layer 105b. Oh, in order to reduce the number of masks, the same resist mask is used to create an additional gate insulating layer 102 The contact hole 128, which is etched to reach the gate electrode, is also formed with the same resist mask. It is preferable to do so. A cross-sectional view at this stage is shown in Figure 9(B).

[0067] Next, after removing the resist mask, a transparent conductive film is deposited. The material for the transparent conductive film is... These include indium oxide (In2O3) and indium oxide tin oxide alloy (In2O3-SnO3). 2. Form materials such as ITO (abbreviated as ITO) using sputtering or vacuum deposition methods. Etching of materials is performed using hydrochloric acid-based solutions. However, etching of ITO in particular is Because residue is easily generated, indium oxide zinc oxide is used to improve etching processability. Gold (In2O3-ZnO) may also be used.

[0068] Next, a sixth photolithography step is performed to form a resist mask, followed by etching. Unnecessary portions of the more transparent conductive film are removed to form pixel electrodes not shown in the diagram.

[0069] Furthermore, in this sixth photolithography process, the gas in the volume section (not shown) The insulating layer 102 and protective insulating film 107 are used as dielectrics to hold capacitance wiring and pixel electrodes together. A quantity is formed.

[0070] Furthermore, in this sixth photolithography process, the terminal portion is covered with a resist mask. A transparent conductive film is left on the sub-part. The transparent conductive film is used as an electrode for connection with the FPC. These include wiring and terminal electrodes for connections that function as input terminals for source wiring.

[0071] Furthermore, in this embodiment, the third wiring layer 110, which is made of a transparent conductive film, is a nonlinear element 17 The conductive layer 105b, which serves as the drain electrode of 0a, and the scanning line 108 are connected to the contact hole 125. It is connected via 128 to form a protection circuit.

[0072] Next, the resist mask is removed. A cross-sectional view at this stage is shown in Figure 9(C).

[0073] Thus, through six photolithography processes, six photomasks are used to create multiple The nonlinear element has (in this embodiment, two nonlinear elements 170a and 170b) A protection circuit (having) can be completed. The first oxide semiconductor layer and wiring of the nonlinear element. In the connection structure with the layer, the second oxide semiconductor has higher electrical conductivity than the first oxide semiconductor layer. By providing a region that connects to the layer, more stable operation is achieved compared to using only metal wiring. This makes it possible to enhance the function of the protection circuit and stabilize its operation. According to this embodiment, along with the formation of a nonlinear element, multiple TFTs can be fabricated in the same manner. Therefore, we can fabricate a pixel section with a bottom-gate type n-channel TFT and a protection circuit. This can be done simultaneously. In other words, by following the process shown in this embodiment, the thin film An active matrix equipped with a protection diode that reduces the likelihood of failure in the protection circuit due to peeling. A substrate for a U-shaped display device can be manufactured.

[0074] Furthermore, if the first oxide semiconductor layer 103 is damaged, the electrical properties of the nonlinear element will be impaired. However, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment is channel Because it is protected by a protective layer, the conductive film 132 that serves as the source electrode and drain electrode In the etching process and the etching process of the oxide 2 semiconductor layer, the first oxide semiconductor layer There is no risk of damage to 103. Therefore, the channel formation region is preserved by the channel protection layer. The nonlinear element of this protected embodiment has excellent reliability, and protection using this nonlinear element Display devices equipped with this circuit also offer excellent reliability.

[0075] (Embodiment 3) This embodiment describes a display device in which a protection circuit including a nonlinear element is formed around the pixel portion and its periphery. A different form from Form 2 will be explained with reference to Figure 27.

[0076] Figure 27(A) shows a protection including thin-film transistors and nonlinear elements arranged in the pixel area on the same substrate. This figure shows the cross-sectional structure of a display device with a circuit formed on it. The nonlinear element 270a is the source electrode. And conductive layers (105a, 105b) that serve as drain electrodes are provided in contact with them.

[0077] In the nonlinear element 270a, the first oxide semiconductor layer 10 modified by plasma treatment A configuration in which conductive layer 105a and conductive layer 105b are in contact with 3 is preferred. Before forming the conductive film, the first oxide semiconductor layer 103 is subjected to plasma treatment.

[0078] One example of plasma processing is reverse sputtering. The treatment can be performed using argon gas, hydrogen gas, or a mixture of argon and hydrogen gas. The above gas may also contain oxygen gas. Alternatively, argon gas may be replaced with other noble gases. You may use it.

[0079] Furthermore, as shown in Figure 27(B), a protective insulating layer is provided on the first oxide semiconductor layer 103 as an interlayer insulating layer. A border film 107 and an insulating layer 136 may be formed. The conductive layers 105a and 105b are protective insulating The first oxide semiconductor layer is transmitted through the contact holes formed in the edge film 107 and the insulating layer 136. It makes contact with 103 and connects electrically.

[0080] In Figure 27(B), the gate insulating layer 102 and the channel protective layer 133 are made of silica oxide. The CON layer and the first oxide semiconductor layer 103 are oxygen-rich oxides containing In, Ga, and zinc. The semiconductor conductive layer and the insulating layer 135 are formed using a silicon nitride layer by sputtering. .

[0081] In Figure 27(B), the conductive layers (105a, 105b) serve as the source and drain electrodes. It is preferable to perform plasma treatment on the first oxide semiconductor layer 103 before the formation of the plasma. The process may be carried out after forming the channel protection layer 133 on the first oxide semiconductor layer 103. After forming contact holes in the protective insulating film 107 and the insulating layer 136, Plasma treatment may be performed on the first oxide semiconductor layer 103 exposed on the bottom surface.

[0082] The source electrode and the drain electrode are in contact with the first oxide semiconductor layer 103 modified by plasma treatment. By forming conductive layers (105a, 105b) that serve as electrodes, the first oxide semiconductor is formed. The contact between layer 103 and the conductive layers (105a, 105b) that serve as the source and drain electrodes. The resistance can be reduced. Also, the first oxide semiconductor layer 103 can be processed by plasma treatment. This increases the bonding strength between the conductive layers (105a, 105b) that serve as the source electrode and drain electrode. This reduces the likelihood of defects caused by thin film peeling.

[0083] Through the above process, a display device with a highly reliable protection circuit is obtained as a nonlinear element semiconductor device. It is possible to produce this.

[0084] Furthermore, if the first oxide semiconductor layer 103 is damaged, the electrical properties of the nonlinear element will be impaired. However, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment is channel Because it is protected by a protective layer, the etchable conductive film that forms the source electrode and drain electrode During the machining process, there is no risk of damage to the first oxide semiconductor layer 103. Therefore, The nonlinear element of this embodiment, in which the channel formation region is protected by a Nel protective layer, exhibits superior reliability. Display devices equipped with protection circuits using these nonlinear elements also offer excellent reliability. ru.

[0085] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0086] (Embodiment 4) In this embodiment, a display device to which one aspect of the present invention is applied includes a protection circuit and a pixel section. An example of electronic paper having TFTs on the same substrate is shown.

[0087] Figure 10 shows an example of an active-matrix electronic display device to which one aspect of the present invention is applied. The paper shows the thin-film transistor 581 used in the semiconductor device, in the embodiment. It can be fabricated in the same way as the nonlinear element shown in 2, and uses an oxide semiconductor containing In, Ga, and Zn. This is a thin-film transistor with high electrical properties used in the body layer, source region, and drain region. .

[0088] The electronic paper in Figure 10 is an example of a display device using a twist ball display method. The Toball display method is an electrode layer that uses spherical particles painted in white and black as display elements. It is placed between the first electrode layer and the second electrode layer, and a potential difference is applied between the first electrode layer and the second electrode layer. This method of display is achieved by controlling the orientation of spherical particles by generating a phenomenon.

[0089] Thin-film transistor 581 is a thin-film transistor with a bottom gate structure, and the source electrode layer or The drain electrode layer is in contact with the first electrode layer 587 and the insulating layer 585 at an opening formed therein, and electricity is discharged. They are connected to each other. The gate insulating layer 583 is on top of the gate electrode, and the protective layer 584 is on the channel It is located on top of the protective layer. Between the first electrode layer 587 and the second electrode layer 588 is a black region 59 It includes a cavity 594 having a white region 0a and 590b, and being filled with liquid around it. Spherical particles 589 are provided, and the area around the spherical particles 589 is filled with a filler material 595 such as resin. These are located between the first substrate 580 and the second substrate (see Figure 10).

[0090] Alternatively, an electrophoretic element can be used instead of a twist ball. (Transparent liquid) And, positively charged white particles and negatively charged black particles are enclosed in a diameter of 10 μm to 20 Microcapsules of approximately 0 μm are used. They are placed between the first electrode layer and the second electrode layer. The microcapsules, when an electric field is applied, are formed by the first electrode layer and the second electrode layer, and white The white and black particles move in opposite directions, allowing for the display of either white or black. An electrophoretic display element, commonly known as electronic paper, is a display element that applies this principle. Electrophoretic display elements have a higher reflectivity than liquid crystal display elements, so auxiliary lights are not required. Furthermore, it consumes little power and the display can be seen even in dimly lit places. Even if power is not supplied to the display unit, it is possible to retain the image that has been displayed. Yes. Therefore, for example, from a radio wave source that serves as a power supply to a semiconductor device with a display function (simply display) Even when a display device (also called a semiconductor device equipped with a display device) is moved away, the display It becomes possible to save the created image.

[0091] Through the above process, in the connection structure between the first oxide semiconductor layer and the wiring layer of the nonlinear element, By providing a region that connects to a second oxide semiconductor layer with higher electrical conductivity than the first oxide semiconductor layer. Therefore, compared to the case with metal wiring only, it becomes possible to achieve stable operation. This enhances the function of the protection circuit and stabilizes its operation. Furthermore, the improved operational stability makes it thinner. Reliability: Equipped with a protection circuit consisting of nonlinear elements that are less prone to defects caused by film peeling. It is possible to create high-quality electronic paper.

[0092] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is Electronic paper, which boasts excellent reliability and incorporates a protection circuit using its nonlinear elements, is also reliable. They are highly reliable.

[0093] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0094] (Embodiment 5) In this embodiment, in a display device which is an example of a semiconductor device according to one aspect of the present invention, the same base The board includes at least a protection circuit, part of a drive circuit, and thin-film transistors arranged in the pixel area. Examples of the fabrication process are described below using Figures 11 to 16.

[0095] Thin-film transistors placed in the pixel area on the same substrate as the protection circuit are shown in Embodiment 2 or 3. It is formed in the same way as a nonlinear element. Furthermore, the formed thin-film transistor is an n-channel type TFT. Therefore, among the drive circuits, one of the drive circuits that can be constructed with an n-channel TFT is The pixel portion is formed on the same substrate as the thin-film transistor of the pixel portion.

[0096] Block of an active matrix liquid crystal display device, which is an example of a semiconductor device according to one aspect of the present invention An example of the diagram is shown in Figure 11(A). The display device shown in Figure 11(A) is mounted on a substrate 5300. A pixel section 5301 having multiple pixels equipped with display elements, and a scanning line driving circuit 5 that selects each pixel. 302 and a signal line drive circuit 5303 that controls the input of the video signal to the selected pixel To possess.

[0097] The pixel section 5301 is arranged in a column direction extending from the signal line drive circuit 5303, and contains multiple signals The signal line drive circuit 5303 is connected by lines S1 to Sm (not shown), and the scan line drive circuit Multiple scan lines G1 to Gn (not shown) are arranged extending in the row direction from 5302. It is connected to the scan line drive circuit 5302 and corresponds to the signal lines S1 to Sm and scan lines G1 to Gn. It has multiple pixels (not shown) arranged in a matrix. And each pixel is Signal line Sj (one of signal lines S1 to Sm), scan line Gi (one of scan lines G1 to Gn) It will be connected to either one of the following.

[0098] Furthermore, thin film transients that can be formed in the same manner as the nonlinear elements shown in Embodiments 2 and 3 The st is an n-channel TFT, and the signal line driving circuit is composed of n-channel TFTs. Let's explain using Figure 12.

[0099] The signal line drive circuit shown in Figure 12 consists of driver IC 5601 and switch group 5602_1~56 02_M, first wiring 5611, second wiring 5612, third wiring 5613 and wiring 56 It has 21_1~5621_M. Each of the switch groups 5602_1~5602_M is, First thin-film transistor 5603a, second thin-film transistor 5603b and third thin film It has a transistor 5603c.

[0100] Driver IC 5601 is connected to the first wire 5611, the second wire 5612, and the third wire 5613. And it is connected to wiring 5621_1~5621_M. And the switch group 5602_1~ Each of the 5602_M components is the first wiring 5611, the second wiring 5612, and the third wiring 561 Wiring 5621_1~5 corresponding to 3 and switch groups 5602_1~5602_M It is connected to 621_M. And each of the wires 5621_1~5621_M is the first Thin-film transistor 5603a, second thin-film transistor 5603b and third thin-film transistor It is connected to three signal lines via the ZISTA 5603c. For example, wiring 5621 in column J. _J (any one of the wirings 5621_1 to 5621_M) is for switch group 5602 _J has a first thin-film transistor 5603a, a second thin-film transistor 5603b and And via the third thin-film transistor 5603c, signal line Sj-1, signal line Sj, signal line S Connects to j+1

[0101] Furthermore, the first wiring 5611, the second wiring 5612, and the third wiring 5613 are each connected to a signal The number is entered.

[0102] Furthermore, it is preferable that the driver IC 5601 be formed on a single-crystal substrate. The switch groups 5602_1 to 5602_M are formed on the same substrate as the pixel section. This is desirable. Therefore, the driver IC 5601 and the switch group 5602_1~5602_ It is best to connect to M via an FPC or similar device.

[0103] Next, regarding the operation of the signal line drive circuit shown in Figure 12, please refer to the timing chart in Figure 13. Let me explain. Note that in the timing chart of Figure 13, the scan line Gi of the i-th row is selected. The timing chart shows the case where this is the case. Furthermore, the selection period of scan line Gi in row i. This is divided into a first sub-selection period T1, a second sub-selection period T2, and a third sub-selection period T3. It is divided. Furthermore, the signal line driving circuit in Figure 12 is in the case when a scan line of another row is selected. Even in combination, it operates in the same way as in Figure 13.

[0104] Note that in the timing chart of Figure 13, wiring 5621_J in column J is the first thin-film transient. Transistor 5603a, second thin-film transistor 5603b, and third thin-film transistor 560 Regarding the case where the signal lines Sj-1, Sj, and Sj+1 are connected via 3c: It is showing.

[0105] Note that the timing chart in Figure 13 shows the timing at which the scan line Gi of the i-th row is selected, and the On / off timing of 1 thin-film transistor 5603a, 5703a, 2 thin-film transistor On / off timing of transistor 5603b, 5703b, third thin-film transistor 56 The on / off timing of 03c is input to 5703c and the wiring in column J, 5621_J. This indicates signal 5721_J.

[0106] Note that wiring 5621_1 to wiring 5621_M have a first sub-selection period T1 and a second sub-selection period. During the selection period T2 and the third sub-selection period T3, different video signals are input. For example, the video signal input to wiring 5621_J during the first sub-selection period T1 is It is input to signal line Sj-1 and input to wiring 5621_J during the second sub-selection period T2. The video signal is input to signal line Sj, and during the third sub-selection period T3, wiring 5621 The video signal input to _J is input to signal line Sj+1. Furthermore, the first sub-selection period During interval T1, the second sub-selection period T2, and the third sub-selection period T3, wiring 5621_ The video signals input to J are Data_j-1, Data_j, and Data_j+ respectively. Let's set it to 1.

[0107] As shown in Figure 13, the first thin-film transistor 5603 in the first subselection period T1 When a is turned on, the second thin-film transistor 5603b and the third thin-film transistor 5603c It turns off. At this time, Data_j-1 input to wiring 5621_J is the first thin film The signal is input to the signal line Sj-1 via transistor 5603a. Second sub-selection period T2 Then, the second thin-film transistor 5603b turns on, and the first thin-film transistor 5603a And the third thin-film transistor 5603c turns off. At this time, input is input to wiring 5621_J. The data_j is input to the signal line Sj via the second thin-film transistor 5603b. During the third subselection period T3, the third thin-film transistor 5603c is turned on, and the first The thin-film transistor 5603a and the second thin-film transistor 5603b are turned off. At that time, Data_j+1 input to wiring 5621_J is transmitted to the third thin-film transistor 56 The signal is input to signal line Sj+1 via 03c.

[0108] From the above, the signal line drive circuit in Figure 12 divides the 1-gate selection period into three parts. During the 1-gate selection period, the video signal is input to three signal lines from one wiring 5621. Therefore, the signal line driving circuit in Figure 12 has the driver IC 5601 formed The number of connections between the substrate and the substrate on which the pixels are formed should be reduced to approximately 1 / 3 of the number of signal lines. This is possible. By reducing the number of connections to approximately 1 / 3, the signal line drive circuit in Figure 12 becomes reliable. It can improve performance, yield, and other factors.

[0109] Furthermore, as shown in Figure 12, the 1-gate selection period is divided into multiple sub-selection periods, and multiple sub-selection... During each selection period, a video signal is input to each of multiple signal lines from a single wiring. If this is possible, the arrangement, number, and driving method of the thin-film transistors are not limited.

[0110] For example, in each of three or more sub-selection periods, three or more signal lines are routed from one wire. When a video signal is input to each, the thin-film transistor and the thin-film transistor are controlled. You just need to add some wiring for that. However, if you divide the 1-gate selection period into 4 or more sub-selection periods... When divided, the duration of one sub-selection period becomes shorter. Therefore, the duration of one gate selection period is two or It is desirable to divide the period into three sub-selection periods.

[0111] As another example, as shown in the timing chart in Figure 14, one selection period precharging The period Tp, the first sub-selection period T1, the second sub-selection period T2, and the third selection period T3 It may be divided. Furthermore, in the timing chart of Figure 14, the scan line Gi of the i-th row is selected. The timing of the on / off of the first thin-film transistor 5603a, 5803 a. On / off timing of the second thin-film transistor 5603b 5803b, third thin On / off timing 5803c of the film transistor 5603c and wiring 562 in the J column shows the signal 5821_J input to 1_J. As shown in FIG. 14, during the precharge period Tp, the first thin film transistor 5603a, the second thin film transistor 5603 b and the third thin film transistor 5603c are turned on. At this time, the precharge voltage Vp applied to the wiring 5621_J is input to the signal lines Sj - 1, signal line Sj, and signal line Sj + 1 through the first thin film transistor 5603a, the second thin film transistor 5603b, and the third thin film transistor 5603c, respectively. In the first subselection period T1, the first thin film transistor 5603a is turned on, and the second thin film transistor 5603b and the third thin film transistor 5603c are turned off. At this time, Data a_j - 1 input to the wiring 5621_J is input to the signal line Sj - 1 through the first thin film transistor 5603a . In the second subselection period T2, the second thin film transistor 5603b is turned on, and the first thin film transistor 5603a and the third thin film transistor 5603c are turned off. At this time , Data_j input to the wiring 5621_J is input to the signal line Sj through the second thin film transistor 5603b . In the third subselection period T3, the third thin film transistor 5603c is turned on, and the first thin film transistor 5603a and the second thin film transistor 5 603b are turned off. At this time, Data_j + 1 input to the wiring 5621_J is input to the signal line Sj + 1 through the third thin film transistor 5603c. As described above, the signal line drive circuit of FIG. 12 to which the timing chart of FIG. 14 is applied is a

[0112] sub By providing a precharge selection period before the select period, the signal line can be precharged. Therefore, video signals can be written to pixels at high speed. Furthermore, similar components as in Figure 13 are indicated using the same reference numerals, and identical parts or similar functions are indicated. A detailed explanation of the part containing this will be omitted.

[0113] Furthermore, the configuration of the scan line driving circuit will be explained. The scan line driving circuit consists of a shift register and a It has a faucet. It may also have a level shifter in some cases. Scan line drive In the circuit, the shift register receives the clock signal (CLK) and the start pulse signal (SP). A selection signal is generated when the input ) is received. The generated selection signal is buffered It is buffered and amplified and supplied to the corresponding scan line. The scan line contains the pixels for one line. The gate electrode of the transistor is connected. And the transistor for one line of pixels Since they all need to be turned ON at once, the buffer must be capable of handling a large current. It is used.

[0114] Figures 15 and 16 illustrate one form of a shift register used in part of a scan line driving circuit. I will explain.

[0115] Figure 15 shows the circuit configuration of the shift register. It consists of flip-flops 5701 (flip-flops 5701_1 to 5701_n). Furthermore, the first clock signal, the second clock signal, the start pulse signal, and the reset signal are It takes input and operates.

[0116] The connection relationship of the shift register in Figure 15 will be explained. The shift register in Figure 15 is i-stage Flip-flop 5701_i (Flip-flop 5701_1~5701_n Either (i) is that the first wiring 5501 shown in Figure 16 connects to the seventh wiring 5717_i-1. The second wiring 5502 shown in Figure 16 is connected to the seventh wiring 5717_i+1. The third wiring 5503 shown in Figure 16 is connected to the seventh wiring 5717_i, as shown in Figure 16. The sixth wire 5506 is connected to the fifth wire 5715.

[0117] Furthermore, the fourth wiring 5504 shown in Figure 16 is the second wiring for odd-numbered flip-flops. It is connected to 5712, and in even-numbered flip-flops, it is connected to the third wire 5713. The fifth wiring 5505 shown in Figure 16 is connected to the fourth wiring 5714.

[0118] However, the first wiring 5501 shown in Figure 16 of the first stage flip-flop 5701_1 is Connected to wiring 5711, the nth stage flip-flop 5701_n is shown in Figure 16. Wiring 2, 5502, is connected to wiring 6, 5716.

[0119] Note that the first wiring 5711, the second wiring 5712, the third wiring 5713, and the sixth wiring 57 Even if we call 16 the first signal line, the second signal line, the third signal line, and the fourth signal line, Good. Furthermore, the fourth wire 5714 and the fifth wire 5715 are connected to the first power line and the second power line, respectively. You could also call it the power line 2.

[0120] Next, the details of the flip-flop shown in Figure 15 are shown in Figure 16. The flop consists of a first thin-film transistor 5571, a second thin-film transistor 5572, The third thin-film transistor 5573, the fourth thin-film transistor 5574, and the fifth thin-film transistor The fifth thin film transistor 5575, the sixth thin film transistor 5576, the seventh thin film transistor 5577, and the eighth thin film transistor 5578 are included. Note that the first thin film transistor 5571, the second thin film transistor 5572, the third thin film transistor 5573, the fourth thin film trans istor 5574, the fifth thin film transistor 5575, the sixth thin film transistor 5576, the seventh thin film transistor 5577, and the eighth thin film transistor 5578 are n-channel transistors, and are assumed to be in a conductive state when the voltage between the gate and source (Vgs) exceeds the threshold voltage (Vth).

[0121] Next, the flip-flop connection configuration shown in FIG. 16 is described below.

[0122] The first electrode (either the source electrode or the drain electrode) of the first thin film transistor 5571 is connected to the fourth wiring 5504, and the second electrode (the other of the source electrode or the drain electrode) of the first thin film transistor 5571 is connected to the third wiring 5503.

[0123] The first electrode of the second thin film transistor 5572 is connected to the sixth wiring 5506, and the second electrode of the second thin film transistor 5572 is connected to the third wiring 5503.

[0124] The first electrode of the third thin film transistor 5573 is connected to the fifth wiring 5505, and the second electrode of the third thin film transistor 5573 is connected to the gate electrode of the second thin film transistor 5572 and the gate electrode of the third thin film transistor 5573 is connected to the fifth wiring 5505.

[0125] The first electrode of the fourth thin film transistor 5574 is connected to the sixth wiring 5506, and the fourth​​ The second electrode of thin-film transistor 5574 is connected to the gate electrode of the second thin-film transistor 5572. The gate electrode of the fourth thin-film transistor 5574 is connected to the first thin-film transistor 5 It is connected to the gate electrode of 571.

[0126] The first electrode of the fifth thin-film transistor 5575 is connected to the fifth wiring 5505, and the fifth The second electrode of thin-film transistor 5575 is the gate electrode of the first thin-film transistor 5571. The gate electrode of the fifth thin-film transistor 5575 is connected to the first wiring 5501. It will be done.

[0127] The first electrode of the sixth thin-film transistor 5576 is connected to the sixth wiring 5506, and the sixth The second electrode of thin-film transistor 5576 is the gate electrode of the first thin-film transistor 5571. The gate electrode of the sixth thin-film transistor 5576 is connected to the second thin-film transistor 5 It is connected to the gate electrode of 572.

[0128] The first electrode of the seventh thin-film transistor 5577 is connected to the sixth wiring 5506, and the seventh The second electrode of thin-film transistor 5577 is the gate electrode of the first thin-film transistor 5571. The gate electrode of the seventh thin-film transistor 5577 is connected to the second wiring 5502. The first electrode of the eighth thin-film transistor 5578 is connected to the sixth wiring 5506. The second electrode of the eighth thin-film transistor 5578 is connected to the second thin-film transistor 5572. The gate electrode of the eighth thin-film transistor 5578 is connected to the first wiring 550. It connects to 1.

[0129] Note that the gate electrode of the first thin-film transistor 5571 and the fourth thin-film transistor 5574 The gate electrode of the fifth thin-film transistor 5575, the second electrode of the sixth thin-film transistor The connection point between the second electrode of transistor 5576 and the second electrode of thin-film transistor 5577 is Let's call it code 5543. Furthermore, the gate electrode of the second thin-film transistor 5572, and the third thin-film transistor The second electrode of film transistor 5573, the second electrode of the fourth thin film transistor 5574, The gate electrode of the sixth thin-film transistor 5576 and the gate electrode of the eighth thin-film transistor 5578 The connection point of electrode 2 is designated as node 5544.

[0130] Furthermore, the first wiring 5501, the second wiring 5502, the third wiring 5503 and the fourth wiring 5 Even if we call 504 the first signal line, the second signal, the third signal line, and the fourth signal line, Good. Furthermore, connect the fifth wire 5505 to the first power line and the sixth wire 5506 to the second power line. You could call it that.

[0131] Furthermore, the signal line drive circuit and the scan line drive circuit are combined with the nonlinear elements shown in Embodiment 2 or 3. It is also possible to fabricate it using only n-channel TFTs that can be formed in a similar manner. n-channel TF can be formed in a similar manner with the nonlinear element shown in Embodiment 2 or 3. Because T has high transistor mobility, it is possible to increase the driving frequency of the drive circuit. In addition, n-channels can be formed in the same manner as the nonlinear elements shown in Embodiments 2 and 3. Nell-type TFTs are oxygen-deficient oxide semiconductor layers containing indium, gallium, and zinc. Because parasitic capacitance is reduced by the drain region or the saturation region, the frequency response (also called the f-response) is reduced. The (ability) is high. For example, when formed in the same manner as the nonlinear element shown in Embodiment 2 or 3 A scan line driving circuit using an n-channel TFT can be operated at high speed. This also enables features such as increasing the frame rate or inserting black screens. It is possible.

[0132] Furthermore, increasing the channel width of the transistors in the scan line driving circuit, and multiple scan lines By arranging the drive circuit and other factors, it is possible to achieve even higher frame frequencies. When multiple scan line drive circuits are arranged, a scan line drive circuit is required to drive the even-numbered scan lines. The circuitry is placed on one side, and the scan line drive circuitry for driving odd-numbered scan lines is placed on the opposite side. By doing so, it is possible to increase the frame frequency.

[0133] Furthermore, an example of a semiconductor device to which one aspect of the present invention is applied is an active matrix type light-emitting table. When fabricating a display device, multiple thin-film transistors are arranged in at least one pixel. It is preferable to arrange multiple scan line driving circuits. Active matrix type light-emitting display device An example of a block diagram is shown in Figure 11(B).

[0134] The light-emitting display device shown in Figure 11(B) has multiple pixels equipped with display elements on a substrate 5400. A pixel section 5401, a first scan line driving circuit 5402 that selects each pixel, and a second scan line The drive circuit 5404 and the signal line drive circuit 5 control the input of the video signal to the selected pixel. It has 403.

[0135] In the case of converting the video signal input to the pixels of the light-emitting display device shown in Figure 11(B) into a digital format In total, pixels are either emitting or not emitting light by switching transistors on and off. Therefore, gradation can be displayed using area gradation or time gradation. The integrating method divides one pixel into multiple sub-pixels and drives each sub-pixel independently based on the video signal. This is a driving method that performs grayscale display by moving the pixels. Time-based grayscale display is also a method where pixels emit light... This is a driving method that performs grayscale display by controlling the duration of the operation.

[0136] Because light-emitting elements have a higher response speed compared to liquid crystal elements, they are more suitable for time-gradation methods than liquid crystal elements. Specifically, when displaying using time gradation, one frame period is divided into multiple subframes. The video signal is divided into subframes. Then, according to the video signal, the light-emitting element of each pixel in each subframe period To make the child emit light or not emit light. By dividing it into multiple subframe periods, The total length of time during which a pixel actually emits light during one frame is controlled by the video signal. It can be controlled and grayscale can be displayed.

[0137] In the light-emitting display device shown in Figure 11(B), one pixel has a switching TFT and an electric When two TFTs are arranged, including one for flow control, the first is the gate wiring of the switching TFT. The signal input to the scan line is generated by the first scan line drive circuit 5402, and the current control TFT The signal input to the second scan line, which is the gate wiring, is generated by the second scan line drive circuit 5404. The example shows the signal input to the first scan line and the signal input to the second scan line. The signal and the signal may both be generated by a single scan line drive circuit. Also, for example, The operation of the switching element is controlled by the number of transistors in the switching element. The first scan line used for this purpose may be provided multiple times for each pixel. In this case, The signals input to multiple first scan lines can all be generated by a single scan line drive circuit. Alternatively, it may be generated by multiple scan line drive circuits.

[0138] Furthermore, in light-emitting display devices, the drive circuit is composed of n-channel TFTs. A portion of the drive circuit can be formed on the same substrate as the thin-film transistors in the pixel section. Furthermore, the signal line drive circuit and the scan line drive circuit are used in conjunction with the nonlinear elements shown in Embodiments 2 and 3. It is also possible to fabricate it using only n-channel TFTs that can be formed using a similar method.

[0139] Furthermore, the above-mentioned drive circuit is not limited to liquid crystal displays or light-emitting displays, but also includes switching elements and It may also be used in electronic paper, which uses electrically connected elements to drive electronic ink. Electronic paper is also called an electrophoretic display device (electrophoretic display), and is the same as paper. Advantages include readability, lower power consumption compared to other display devices, and the ability to create a thin and light form factor. It has a point.

[0140] Electrophoretic displays can take various forms, but one involves a first particle with a positive charge. A microcapsule containing a child and a second particle having a negative charge is placed in a solvent or solute. It is a dispersed substance, and by applying an electric field to the microcapsules, micro Move the particles inside the capsule in opposite directions and display only the color of the particles that have gathered on one side. It is such that the first or second particle contains dye and, in the absence of an electric field, It does not move. Also, the color of the first particle and the color of the second particle are different (colorless). (Includes)

[0141] Thus, in electrophoretic displays, substances with high dielectric constants move to regions with high electric fields. This is a display that utilizes the so-called electrophoretic effect. Electrophoretic displays are liquid crystal displays. The polarizing plate and opposing substrate required for the display device are not needed for the electrophoresis display device, and the thickness and weight are halved. Reduce.

[0142] A solution in which the above microcapsules are dispersed in a solvent is called electronic ink. This electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. Color display is also possible by using color filters or particles containing pigments.

[0143] Furthermore, the microphone is placed on the active matrix substrate, appropriately sandwiched between the two electrodes. By arranging multiple microcapsules, an active-matrix type display device can be completed. By applying an electric field to the cell, a display can be created. For example, the non- Active magnets obtained by thin-film transistors that can be formed in a similar manner along with linear elements A Trix substrate can be used.

[0144] Furthermore, the first and second particles in the microcapsules are made of conductive material, insulating material, Semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, electro A type of material selected from trochromic materials, magnetophoretic materials, or a composite material thereof Use it.

[0145] Through the above process, in the connection structure between the first oxide semiconductor layer and the wiring layer of the nonlinear element, A region where a 2-oxide semiconductor layer with higher electrical conductivity than a 1-oxide semiconductor layer is joined, or By creating a region modified by plasma treatment, the stability is improved compared to using only metal wiring. This makes it possible to operate the device. This enhances the function of the protection circuit and improves operational stability. This allows for improved operational stability and reduces the likelihood of defects caused by thin film peeling. A highly reliable display device can be fabricated by incorporating a protection circuit consisting of nonlinear elements.

[0146] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is It boasts excellent reliability, and the display device equipped with a protection circuit using its nonlinear elements is also highly reliable. It excels in this area.

[0147] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0148] (Embodiment 6) A thin-film transistor is fabricated together with a nonlinear element according to one aspect of the present invention, and the thin-film transistor is defined The components, and furthermore, the drive circuit, are used to create a semiconductor device (also called a display device) that has a display function. It can be manufactured. Furthermore, a nonlinear element and a thin-film transistor according to one aspect of the present invention can be used as a driving circuit. Used in part or all of the form, integrally formed on the same substrate as the pixel section, to form a system-on-panel. It is possible.

[0149] A display device includes display elements. Display elements include liquid crystal elements (also called liquid crystal display elements) and light-emitting elements. A light-emitting element (also called a light-emitting display element) can be used. The light-emitting element is activated by current or voltage. This category includes elements whose brightness is controlled, specifically inorganic EL (Electrical LEDs). This includes Luminescence, organic EL, etc. Also, electronic inks, etc. Display media in which contrast changes due to the effect can also be applied.

[0150] Furthermore, the display device includes a panel in which the display elements are sealed, and a controller on the panel. The invention includes a module on which ICs and the like are mounted. Furthermore, one aspect of the present invention includes the table Regarding the element substrate, which is a form of the display element before it is completed in the process of manufacturing a display device. Furthermore, the element substrate is provided with means for supplying current to the display element in each of the multiple pixels. Specifically, the substrate may be in a state where only the pixel electrodes of the display element are formed, or the pixels This is the state after the conductive film that will serve as the electrode has been deposited, but before etching to form the pixel electrode. It's fine if it exists, and all forms are applicable.

[0151] In this specification, the term "display device" refers to an image display device, a display device, or an optical display device. This refers to the power source (including lighting equipment). It also refers to connectors, such as FPC (Flexible Printed Circuit). (inted circuit) or TAB (Tape Automated Bon (ding) tape or TCP (Tape Carrier Package) Modules that have a printed circuit board attached to the end of the TAB tape or TCP. The display element or IC (integrated circuit board) is integrated using the COG (Chip On Glass) method. All modules in which the road is directly implemented are also included in the display device.

[0152] In this embodiment, the appearance of a liquid crystal display panel corresponding to one form of the display device according to one aspect of the present invention. The cross-section will be explained using Figure 17. Figure 17 shows the nonlinear element and the same method. Thin-film transistors 4010, 4011, and liquid crystal elements 4013 with high electrical characteristics can be fabricated. The panel is sealed between the first substrate and the second substrate 4006 with a sealing material 4005. This is a top view of the section, and Figure 17(B) is a cross-sectional view of MN in Figures 17(A1) and (A2). It corresponds to.

[0153] The pixel section 4002 and the scanning line driving circuit 4004 are surrounded on the first substrate 4001. A sealing material 4005 is provided in this manner. Also, the pixel section 4002 and the scan line drive rotation A second substrate 4006 is provided on the path 4004. Therefore, the pixel section 4002 and the scanning The line drive circuit 4004 consists of the first substrate 4001, the sealing material 4005, and the second substrate 4006. It is sealed together with the liquid crystal layer 4008. Also, the seal on the first substrate 4001 A single crystal is placed on a separately prepared substrate in a region different from the area enclosed by material 4005. A signal line driving circuit 4003, formed from a semiconductor film or a polycrystalline semiconductor film, is mounted.

[0154] Furthermore, the method of connecting the separately formed drive circuit is not particularly limited, and COG method, Wire bonding methods or TAB methods can be used. Figure 17(A1) This is an example of implementing the signal line drive circuit 4003 using the COG method, and Figure 17(A2) shows that This is an example of implementing the signal line drive circuit 4003 using the TAB method.

[0155] Furthermore, the pixel section 4002 and the scanning line driving circuit 4004 provided on the first substrate 4001 are, It has multiple thin-film transistors, and in Figure 17(B), the thin film included in the pixel section 4002 Transistor 4010 and thin-film transistor 4011 included in scan line drive circuit 4004 The following is an example. On thin-film transistors 4010 and 4011 are insulating layers 4020 and 402 1 is provided.

[0156] Thin-film transistors 4010 and 4011 use an oxide semiconductor containing In, Ga, and Zn. The conductor layer and the source and drain regions used in the thin-film transistor with high electrical characteristics are paired with In this case, a thin film transient that can be formed in the same manner as the nonlinear element shown in Embodiment 2 or 3 A st can be applied. In this embodiment, thin-film transistors 4010, 40 11 is an n-channel thin-film transistor.

[0157] Furthermore, the pixel electrode layer 4030 of the liquid crystal element 4013 is connected to the thin-film transistor 4010. They are electrically connected. And the counter electrode layer 4031 of the liquid crystal element 4013 is on the second substrate 40 Formed on 06. Pixel electrode layer 4030, counter electrode layer 4031, and liquid crystal layer 4008 The overlapping portion corresponds to the liquid crystal element 4013. Note that the pixel electrode layer 4030 and the opposite The electrode layer 4031 is provided with insulating layers 4032 and 4033, which function as alignment films. The liquid crystal layer 4008 is sandwiched between insulating layers 4032 and 4033.

[0158] The first substrate 4001 and the second substrate 4006 are made of glass, metal (typically, glass). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, polyester film Alternatively, acrylic resin film can be used. Also, aluminum foil can be used with PVF. It is also possible to use sheets with a structure that is sandwiched between films or polyester films.

[0159] Furthermore, 4035 is a columnar spacer obtained by selectively etching an insulating film. To control the distance (cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031 It is provided in [location]. A spherical spacer may also be used.

[0160] Alternatively, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases. Yes, as the temperature of a cholesteric liquid crystal is increased, it transitions from the cholesteric phase to the isotropic phase. This is the phase that appears earlier. The blue phase only appears within a narrow temperature range, so improving the temperature range is necessary. To achieve this, a liquid crystal composition containing 5% or more by weight of a chiral agent is used in the liquid crystal layer 4008. It is used. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs~ With a short duration of 100 μs and optical isotropy, orientation processing is unnecessary, and it exhibits low field-of-view angle dependence. stomach.

[0161] Although this embodiment is an example of a transmissive liquid crystal display device, one aspect of the present invention relates to a reflective liquid crystal display device. It can be applied to both devices and semi-transmissive liquid crystal display devices.

[0162] Furthermore, in the liquid crystal display device of this embodiment, a polarizing plate is provided on the outside (viewing side) of the substrate, and on the inside An example is shown where the colored layer and the electrode layer used for the display element are arranged in that order, but the polarizing plate is placed on the inside of the substrate. It may also be done. Furthermore, the laminated structure of the polarizing plate and the colored layer is not limited to this embodiment, and the polarizing plate and The coloring layer and the manufacturing process conditions should be set appropriately. A light-shielding film that functions in this way may be provided.

[0163] Furthermore, in this embodiment, in order to reduce surface irregularities of the thin-film transistor, and thin-film transistor To improve the reliability of the zista, the nonlinear element shown in Embodiment 2 or 3 and the nonlinear element Thin-film transistors that can be formed in a similar manner can function as protective films or planarizing insulating films. The structure is covered with insulating layers (insulating layer 4020, insulating layer 4021). The protective film is, It is designed to prevent the entry of pollutants such as organic matter, metals, and water vapor suspended in the atmosphere. A dense film is preferred. The protective film is made using the sputtering method, consisting of a silicon oxide film, a silicon nitride film, and an acid Silicon nitride film, silicon nitride film, aluminum oxide film, aluminum nitride film, aluminum oxide nitride film The luminium film or aluminum nitride oxide film may be formed as a single layer or a multilayer structure. The example shown involves forming a protective film using the sputtering method, but it is not particularly limited and can be formed by various methods. That's all you need to do.

[0164] Here, a laminated insulating layer 4020 is formed as a protective film. As the first layer of 0, a silicon oxide film is formed using the sputtering method. Silicon oxide film as a protective layer. Using this method, hillock prevention of aluminum films used as source electrode layer and drain electrode layer is achieved. It is effective in stopping it.

[0165] Furthermore, an insulating layer is formed as the second layer of the protective film. Here, the second layer of the insulating layer 4020 is Then, a silicon nitride film is formed using the sputtering method. When a silicon nitride film is used as a protective film, This refers to the intrusion of mobile ions such as thorium into the semiconductor region, thereby altering the electrical properties of the TFT. It can be suppressed.

[0166] Furthermore, after forming the protective film, the IGZO semiconductor layer is annealed (300°C to 400°C). That's fine.

[0167] Furthermore, an insulating layer 4021 is formed as a planar insulating film. The insulating layer 4021 is made of poly Heat-resistant organic materials such as mids, acrylics, benzocyclobutenes, polyamides, and epoxys. Materials can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials) can also be used. Using siloxane-based resins, PSG (phosphorus glass), BPSG (phosphorus boron glass), etc. It is possible. Siloxane resins can have hydrogen, fluorine, alkyl groups, or other substituents. It may have at least one of the reel groups. Furthermore, the insulating material formed from these materials An insulating layer 4021 may be formed by laminating multiple edge films.

[0168] Siloxane-based resins are formed using siloxane-based materials as the starting material for Si-OS. This corresponds to a resin containing i-bonds. Siloxane resins have hydrogen as a substituent, as well as fluorine and alkyl It may have at least one of the following: a ru group or an aromatic hydrocarbon.

[0169] The method for forming the insulating layer 4021 is not particularly limited and can be sputtered or SOG depending on the material. Spin coating, dip coating, spray coating, droplet ejection (inkjet method, screen coating) Printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife A coater or the like can be used. When forming the insulating layer 4021 using a material liquid, Even if the IGZO semiconductor layer is annealed (300°C to 400°C) at the same time as the work process, Good. By combining the firing process of the insulating layer 4021 and the annealing of the IGZO semiconductor layer, it is efficient. This makes it possible to manufacture semiconductor devices.

[0170] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Titanium oxide-containing indium tin oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide with added silicon dioxide. Conductive materials can be used.

[0171] Furthermore, conductive polymers are used as the pixel electrode layer 4030 and the counter electrode layer 4031. It can be formed using a conductive composition containing (also known as). The resulting pixel electrodes have a sheet resistance of 10,000 Ω / □ or less and a light transmittance at a wavelength of 550 nm. It is preferable that the ratio is 70% or more. Also, the resistance of the conductive polymer contained in the conductive composition The ratio is preferably 0.1 Ω·cm or less.

[0172] As the conductive polymer, so-called π-electron conjugated conductive polymers can be used. For example For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene Examples include derivatives thereof, or copolymers of two or more of these.

[0173] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 The various signals and potentials supplied to 002 are provided by the FPC4018.

[0174] In this embodiment, the connection terminal electrode 4015 is connected to the pixel electrode layer 40 of the liquid crystal element 4013. Formed from the same conductive film as 30, the terminal electrode 4016 is made of thin-film transistor 4010, 40 The source electrode layer and drain electrode layer are formed of the same conductive film.

[0175] The connecting terminal electrode 4015 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. They are electrically connected.

[0176] Furthermore, in Figure 17, a signal line drive circuit 4003 is formed separately and implemented on the first substrate 4001. Although an example of the configuration is shown, this embodiment is not limited to this configuration. Scan line drive circuit Alternatively, it may be formed and implemented separately, or it may be part of the signal line drive circuit or part of the scan line drive circuit. It is also acceptable to form and implement the component separately.

[0177] Figure 18 shows a semiconductor device using a TFT substrate 2600 manufactured by applying one aspect of the present invention. This shows an example of how a liquid crystal display module is configured.

[0178] Figure 18 shows an example of a liquid crystal display module, in which the TFT substrate 2600 and the opposing substrate 2601 are The pixel portion 2603, which includes a TFT and the like, is fixed in place by a material 2602, and the liquid crystal layer is also included between them. A display element 2604 and a colored layer 2605 are provided to form a display area. Colored layer 2605 This is necessary for color display, and in the case of the RGB method, it corresponds to red, green, and blue. A colored layer is provided corresponding to each pixel. The TFT substrate 2600 and the opposing substrate 2601 Polarizing plates 2606, 2607, and 2613 are arranged on the outside. The light source is cold It consists of a cathode tube 2610 and a reflector 2611, and the circuit board 2612 is flexible The wiring circuit section 2608 of the TFT board 2600 is connected by the wire board 2609, and the control External circuits such as polarizing circuits and power supply circuits are incorporated. Also, between the polarizing plate and the liquid crystal layer The layers may be stacked with a phase difference plate in place.

[0179] The LCD display module has TN (Twisted Nematic) mode and IPS (I n-Plane-Switching) mode, FFS (Fringe Field Switching) (witching) mode, MVA (Multi-domain Vertical A) alignment) mode, PVA(Patterned Vertical Alignment) mode nment), ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB(Optical Compensated Bire) fringence) mode, FLC (Ferroelectric Liquid C (rystal) mode, AFLC (AntiFerroelectric Liquid) Crystals and other materials can be used.

[0180] Through the above process, in the connection structure between the first oxide semiconductor layer and the wiring layer of the nonlinear element, A region where a 2-oxide semiconductor layer with higher electrical conductivity than a 1-oxide semiconductor layer is joined, or By creating a region modified by plasma treatment, the stability is improved compared to using only metal wiring. This makes it possible to operate the device. This enhances the function of the protection circuit and improves operational stability. This allows for improved operational stability and reduces the likelihood of defects caused by thin film peeling. It is possible to fabricate a highly reliable liquid crystal display panel equipped with a protection circuit consisting of nonlinear elements. Cut.

[0181] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is Liquid crystal display devices that are highly reliable and equipped with protection circuits using nonlinear elements are also reliable. They are highly reliable.

[0182] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0183] (Embodiment 7) A thin-film transistor is fabricated together with a nonlinear element according to one aspect of the present invention, and the thin-film transistor is defined The components, and furthermore, the drive circuit, are used to create a semiconductor device (also called a display device) that has a display function. It can be manufactured.

[0184] In this embodiment, an example of a light-emitting display device is shown as a display device according to one aspect of the present invention. As an example of a display element, here we will use a light-emitting element that utilizes electroluminescence. This demonstrates that light-emitting devices utilizing electroluminescence use organic compounds as their light-emitting material. They are distinguished by whether they are organic or inorganic compounds; generally, the former are organic EL elements, and the latter are inorganic. It is called an EL element.

[0185] Organic EL elements emit electrons and holes from a pair of electrodes when a voltage is applied to the light-emitting element. Each of these is injected into a layer containing a luminescent organic compound, and an electric current flows through it. Then, these... The recombination of electrons and holes causes the luminescent organic compound to form an excited state. And when that excited state returns to the ground state, it emits light. From this mechanism, Such light-emitting devices are called current-excited light-emitting devices.

[0186] Inorganic electroluminescent (EL) elements are classified into dispersed inorganic EL elements and thin-film inorganic EL elements based on their element configuration. They are classified as such. Dispersive inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The luminescence mechanism utilizes donor and acceptor levels, and the donor-acceptor level is the key to this process. This is a receptor recombination type light emission. Thin-film inorganic EL elements sandwich the light-emitting layer between dielectric layers. Furthermore, it has a structure where it is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. This is a localized light emission. Here, we will explain using an organic EL element as the light-emitting element. ru.

[0187] Figure 19 shows an example of a semiconductor device to which one aspect of the present invention is applied, specifically digital time-gradation driving. This figure shows an example of a possible pixel configuration.

[0188] This section describes the pixel configuration and operation to which digital time-based gradation driving can be applied. This involves a channel that can be formed in the same manner as the nonlinear element shown in Embodiment 2, and an IGZO semiconductor layer. This example shows the use of two n-channel transistors in a single pixel for the Nell-forming region.

[0189] Pixel 6400 consists of a switching transistor 6401, a driving transistor 6402, It has a light-emitting element 6404 and a capacitive element 6403. Switching transistor 64 01 has a gate connected to scan line 6406, and the first electrode (source electrode and drain electrode) The (side) is connected to signal line 6405, and the second electrode (the other of the source electrode and drain electrode) is driven It is connected to the gate of the drive transistor 6402. The drive transistor 6402 is The gate is connected to the power line 6407 via the capacitive element 6403, and the first electrode is connected to the power line 640 It is connected to 7, and the second electrode is connected to the first electrode (pixel electrode) of the light-emitting element 6404. The second electrode of the light-emitting element 6404 corresponds to the common electrode 6408.

[0190] Furthermore, a low power supply potential is set for the second electrode (common electrode 6408) of the light-emitting element 6404. The low power supply potential is defined as the low power supply potential set on power line 6407 relative to the high power supply potential. The potential is the potential that satisfies the high power supply potential, and low power supply potentials include, for example, GND and 0V. It may be fixed. The potential difference between this high power supply potential and the low power supply potential is applied to the light-emitting element 6404. Then, in order to pass current through the light-emitting element 6404 and make the light-emitting element 6404 emit light, a high power supply potential is used. The potential difference between the low power supply potential and the light-emitting element 6404 is set to be greater than or equal to the forward threshold voltage of the light-emitting element 6404. Set the potential for each.

[0191] Note that the capacitive element 6403 is omitted by substituting the gate capacitance of the drive transistor 6402. This is also possible. Regarding the gate capacitance of the drive transistor 6402, channel formation A capacitance may be formed between the region and the gate electrode.

[0192] In the case of a voltage input / voltage drive method, the gate of the drive transistor 6402 is: The drive transistor 6402 is either fully on or completely off. The video signal is input. In other words, the driver transistor 6402 is operated in the linear region. The driver transistor 6402 operates in the linear region, therefore the voltage of the power line 6407 is higher than A high voltage is applied to the gate of the drive transistor 6402. The signal line 6405 is connected to... Apply a voltage equal to or greater than (power line voltage + Vth of the drive transistor 6402).

[0193] Furthermore, when using analog gradation drive instead of digital time gradation drive, the signal input is different. By doing so, the same pixel configuration as in Figure 19 can be used.

[0194] When performing analog grayscale driving, the gate of the driving transistor 6402 is connected to the light-emitting element 6404 Apply a voltage equal to or greater than the forward voltage of the drive transistor 6402 + Vth. (Light-emitting element 64) The forward voltage of 04 refers to the voltage required to achieve the desired brightness, and at least the forward voltage is Includes key voltage. Note that the drive transistor 6402 operates in the saturation region. By inputting an O signal, current can be supplied to the light-emitting element 6404. The drive transistor... To operate the 6402 in the saturation region, the potential of the power line 6407 is set to the drive transistor The gate potential of the TA6402 is set higher. By making the video signal analog, the light-emitting element... By supplying current to the 6404 according to the video signal, analog grayscale driving can be performed.

[0195] Note that the pixel configuration shown in Figure 19 is not limited to this. For example, if new pixels are added to the pixels shown in Figure 19... Switches, resistors, capacitives, transistors, or logic circuits may be added to it.

[0196] Next, the configuration of the light-emitting element will be explained using Figure 20. Here, the driving TFT is n The cross-sectional structure of a pixel will be explained using the case of a type as an example. Figure 20(A)(B)(C) The TFT7001, 7011, and 7021, which are driver TFTs used in semiconductor devices, are actually This is a thin-film transistor that can be formed in the same manner as the nonlinear element shown in the second embodiment of the method, An oxide semiconductor containing n, Ga, and Zn is used in the semiconductor layer and the source and drain regions. The thin-film transistor used has high electrical characteristics.

[0197] In order to extract light from a light-emitting element, it is sufficient that at least one of the electrodes, either the anode or the cathode, is transparent. Then, a thin-film transistor and a light-emitting element are formed on the substrate, and light is emitted from the side opposite to the substrate. This includes top-side emission, bottom-side emission which extracts light from the substrate side, and on the substrate side and the opposite side of the substrate. There is a light-emitting element with a double-sided emission structure that extracts light from the side surface, and the pixel configuration in one aspect of the present invention is It can be applied to any light-emitting element with an injection structure.

[0198] The light-emitting element with an upper surface injection structure will be explained using Figure 20(A).

[0199] Figure 20(A) shows that the driving TFT, TFT7001, is of n type, and the light-emitting element 7002 emits This shows a cross-sectional view of a pixel when the light being emitted passes through to the anode 7005 side. In Figure 20(A), The cathode 7003 of the light-emitting element 7002 and the driving TFT, TFT7001, are electrically connected. The cathode 7003 has a light-emitting layer 7004 and an anode 7005 stacked on top of it in that order. 7003 uses a variety of materials as long as the work function is small and the conductive film reflects light. This is possible. For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable. Even if the light-emitting layer 7004 consists of a single layer, it is configured so that multiple layers are stacked. Either way is fine. If it consists of multiple layers, the electron injection layer is on the cathode 7003. The electron transport layer, light-emitting layer, hole transport layer, and hole injection layer are stacked in that order. It is not necessary to provide all of them. The anode 7005 uses a conductive material that is translucent and transmits light. Forms, for example, indium oxide containing tungsten oxide, indium oxide containing tungsten oxide Indium oxide containing zinc oxide, titanium oxide containing indium tin oxide, and titanium oxide containing indium tin oxide. Oxides, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, oxide A transparent conductive film, such as indium tin oxide with added ilium, may also be used.

[0200] The region between the cathode 7003 and the anode 7005, which sandwiches the light-emitting layer 7004, is the light-emitting element 7002. It corresponds to the pixel shown in Figure 20(A), where the light emitted from the light-emitting element 7002 is the arrow. As indicated by the mark, inject towards the anode 7005 side.

[0201] Next, the light-emitting element with a bottom-extrusion structure will be explained using Figure 20(B). Driving TFT7 When 011 is n-type and the light emitted from the light-emitting element 7012 is directed toward the cathode 7013 side, Figure 20(B) shows a cross-sectional view of the pixel. In Figure 20(B), the driving TFT7011 is electrically connected to the pixel. The cathode 7013 of the light-emitting element 7012 is deposited on a light-transmitting conductive film 7017. The light-emitting layer 7014 and the anode 7015 are stacked in order on the cathode 7013. If 015 is translucent, a shielding material to reflect or block light should be used to cover the anode. A film 7016 may be formed. The cathode 7013 is as in the case of Figure 20(A). Various materials can be used if the conductivity function is small. However, the film thickness is The film should be transparent enough to transmit light (preferably around 5 nm to 30 nm). For example, a 20 nm film. A thick aluminum film can be used as the cathode 7013. And the light-emitting layer 7 014, as in Figure 20(A), consists of a single layer, but multiple layers are stacked on top of each other. Either configuration is acceptable. The anode 7015 does not need to transmit light, but as shown in the diagram... Similar to 20(A), it can be formed using a light-transmitting conductive material. The shielding film 7016 can be made of, for example, a light-reflecting metal, but is not limited to a metal film. It's not possible. For example, a resin with black pigment added can be used.

[0202] The region between the cathode 7013 and anode 7015, sandwiching the light-emitting layer 7014, is the light-emitting element 7012. This corresponds to the pixel shown in Figure 20(B), where the light emitted from the light-emitting element 7012 is As indicated by the arrow, the material is injected towards the cathode 7013.

[0203] Next, a light-emitting element with a double-sided injection structure will be explained using Figure 20(C). Figure 20(C) Then, on the light-transmitting conductive film 7027 electrically connected to the driving TFT 7021, The cathode 7023 of the light-emitting element 7022 is formed by depositing a film, and the light-emitting layer 7024 is on the cathode 7023. The anodes 7025 are stacked in order. The cathode 7023 is, as in the case of Figure 20(A), Various materials can be used if the conductivity function is small. However, the film thickness is ...to the extent that it transmits light. For example, Al with a film thickness of 20 nm is used as cathode 7023. It can be used. The light-emitting layer 7024 is composed of a single layer, as in Figure 20(A). It is acceptable whether it is configured as a single layer or as multiple layers stacked on top of each other. Anode 70 25 is formed using a light-transmitting conductive material, similar to Figure 20(A). It is possible.

[0204] The portion where the cathode 7023, the light-emitting layer 7024, and the anode 7025 overlap is the light-emitting element 70 This corresponds to 22. In the case of the pixel shown in Figure 20(C), the light emitted from the light-emitting element 7022 As indicated by the arrows, the material is injected into both the anode 7025 side and the cathode 7023 side.

[0205] Here, we have discussed organic EL elements as light-emitting elements, but inorganic EL elements can also be used as light-emitting elements. It is also possible to incorporate an L element.

[0206] In this embodiment, a thin-film transistor (driving TFT) controls the driving of the light-emitting element, An example of electrically connected light-emitting elements was shown, but current is currently flowing between the driving TFT and the light-emitting element. A configuration in which a control TFT is connected is also acceptable.

[0207] The semiconductor device shown in this embodiment is not limited to the configuration shown in Figure 20. Various modifications are possible based on the technical concept of this invention.

[0208] Next, a light-emitting display panel (also known as a light-emitting panel) corresponding to one form of the semiconductor device according to one aspect of the present invention. The appearance and cross-section of the invention will be explained using Figure 21. Figure 21(A) shows the invention In the same manner as the nonlinear elements of the embodiment, an oxide semiconductor containing In, Ga, and Zn is formed into a semiconductor. Thin-film transistors and light-emitting elements with high electrical properties used in the layers, source region, and drain region. Figure 21 is a top view of the panel, in which the element is sealed between the second substrate and the panel with a sealing material. (B) corresponds to the cross-sectional view at HI in Figure 21(A).

[0209] Pixel section 4502, signal line driving circuit 4503a, 450 provided on the first substrate 4501 3b, and the scan line drive circuits 4504a and 4504b are surrounded by a sealing material 4505 A pixel unit 4502, signal line driving circuits 4503a, 4503b, and A second substrate 4506 is provided on top of the scan line driving circuits 4504a and 4504b. The pixel section 4502, signal line driving circuits 4503a, 4503b, and scan line driving circuit 45 04a and 4504b consist of a first substrate 4501, a sealing material 4505, and a second substrate 4506. It is sealed together with the filler 4507. Highly dense protective film with minimal degassing (laminated film, UV-curing resin film) It is preferable to package (seal) the product with a cover material such as a linoleum.

[0210] Furthermore, a pixel section 4502 and a signal line driving circuit 4503a are provided on the first substrate 4501. 4503b, and the scan line driving circuits 4504a and 4504b have multiple thin-film transistors. In Figure 21(B), the thin-film transistor 4510 included in the pixel section 4502, The thin-film transistor 4509 included in the signal line driving circuit 4503a is shown as an example.

[0211] Thin-film transistors 4509 and 4510 use an oxide semiconductor containing In, Ga, and Zn. The conductor layer and the source and drain regions used in the thin-film transistor with high electrical characteristics are paired with In this case, a thin-film transistor that can be formed in the same manner as the nonlinear element shown in Embodiment 2 is It can be applied. In this embodiment, thin-film transistors 4509 and 4510 are This is an n-channel thin-film transistor.

[0212] Furthermore, 4511 corresponds to a light-emitting element, and the first electrode is a pixel electrode of the light-emitting element 4511. Layer 4517 is electrically connected to the source electrode layer or drain electrode layer of the thin-film transistor 4510. It is connected to the following. The configuration of the light-emitting element 4511 is a first electrode layer 4517 and an electroluminescent layer The stacked structure consists of 4512 and a second electrode layer 4513, but is not limited to the configuration shown in this embodiment. It is not done. The direction of the light emitted from the light-emitting element 4511 is adjusted according to the direction of the light emitted from the light-emitting element 4511. The configuration can be changed as needed.

[0213] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, using a photosensitive material, an opening is formed on the first electrode layer 4517, and the side wall of the opening It is preferable to form it so that it becomes an inclined surface with a continuous curvature.

[0214] Even if the electroluminescent layer 4512 consists of a single layer, it is configured to be stacked with multiple layers. It's fine either way.

[0215] To prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light-emitting element 4511, the second electrode layer A protective film may be formed on 4513 and the partition wall 4520. The protective film may be a silicon nitride film. It can form silicon nitride oxide films, DLC films, and the like.

[0216] Also, signal line drive circuits 4503a, 4503b and scan line drive circuits 4504a, 4504b The various signals and potentials applied to the pixel section 4502 are FPC4518a, 4518 It is supplied by b.

[0217] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4 of the light-emitting element 4511. Formed from the same conductive film as 517, terminal electrode 4516 is thin-film transistor 4509, 4 It is formed from the same conductive film as the source electrode layer and drain electrode layer of 510.

[0218] The connecting terminal electrode 4515 is connected to the terminal of FPC4518a via the anisotropic conductive film 4519. They are electrically connected.

[0219] The second substrate located in the direction of light extraction from the light-emitting element 4511 must be translucent. No. In that case, glass plate, plastic plate, polyester film or acrylic A light-transmitting material, such as a film, is used.

[0220] Furthermore, in addition to inert gases such as nitrogen and argon, UV-curable resin can also be used as the filler 4507. Oils or thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic, Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EV A (ethylene vinyl acetate) can be used. This embodiment uses filler 4507 Nitrogen was used as the nitrogen.

[0221] Furthermore, if necessary, a polarizing plate or circular polarizing plate (including elliptical polarizing plate) may be placed on the emission surface of the light-emitting element. You may also appropriately incorporate optical films such as phase difference plates (λ / 4 plate, λ / 2 plate) and color filters. Furthermore, an anti-reflective coating may be provided on the polarizing plate or circular polarizing plate. For example, by the surface irregularities An anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0222] The signal line drive circuits 4503a and 4503b, and the scan line drive circuits 4504a and 4504b are Drive turns formed by a single-crystal semiconductor film or polycrystalline semiconductor film on a separately prepared substrate It may be implemented in the circuit. Also, only the signal line drive circuit, or part of it, or the scan line drive circuit The road may be formed separately or partially, and this embodiment is configured as shown in Figure 21. Not limited.

[0223] Through the above process, in the connection structure between the first oxide semiconductor layer and the wiring layer of the nonlinear element, A region where a 2-oxide semiconductor layer with higher electrical conductivity than a 1-oxide semiconductor layer is joined, or By creating a region modified by plasma treatment, the stability is improved compared to using only metal wiring. This makes it possible to operate the device. This enhances the function of the protection circuit and improves operational stability. This allows for improved operational stability and reduces the likelihood of defects caused by thin film peeling. A highly reliable light-emitting display device (display panel) equipped with a protection circuit consisting of nonlinear elements was fabricated. It is possible.

[0224] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is It boasts excellent reliability, and the display device equipped with a protection circuit using its nonlinear elements is also highly reliable. It excels in this area.

[0225] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0226] (Embodiment 8) A display device according to one aspect of the present invention can be applied as electronic paper. It can be used in electronic devices in any field that display information. For example, using e-paper, you can display e-books, posters, and images on trains and other vehicles. This can be applied to in-vehicle advertising, displays on various cards such as credit cards, etc. Examples of sub-devices are shown in Figures 22 and 23.

[0227] Figure 22(A) shows poster 2631 made with electronic paper. In the case of printed materials, the exchange of advertisements is done manually, but one aspect of the present invention applies Using electronic paper, the advertisement display can be changed in a short amount of time. Also, the display does not break down. A stable image can be obtained without any issues. Furthermore, the poster is configured to transmit and receive information wirelessly. That is also acceptable.

[0228] Figure 22(B) also shows in-vehicle advertisements 2632 on trains and other vehicles. In the case of printed paper, advertisements are changed manually, but one aspect of the present invention is suitable By using electronic paper, it is possible to change the advertisement display in a short time without requiring much manpower. This is possible. Furthermore, a stable image can be obtained without any display distortion. Note that the poster is wireless. It may also be configured to allow information to be sent and received.

[0229] Figure 23 also shows an example of eBook 2700. For example, eBook 2700 is, It consists of two enclosures, enclosure 2701 and enclosure 2703. Enclosure 2701 and enclosure The body 2703 is integrated with the shaft portion 2711, and opens and closes around the shaft portion 2711 as an axis. It is possible to perform operations. This configuration makes it possible to operate like a paper book. This is the result.

[0230] The display unit 2705 is incorporated into the housing 2701, and the display unit 2707 is incorporated into the housing 2703. It is included. Display units 2705 and 2707 are configured to display a continuation screen. Alternatively, a configuration that displays different screens is also acceptable. For example, text is displayed on the right-hand display unit (display unit 2705 in Figure 23), and the left-hand display unit An image can be displayed on the display unit 2707 in Figure 23.

[0231] Furthermore, Figure 23 shows an example in which the housing 2701 is equipped with an operating unit, etc. For example, housing 2 Unit 701 is equipped with a power supply 2721, operation keys 2723, speaker 2725, and the like. The page can be turned using operation key 2723. Note that the key is located on the same side as the display unit of the casing. It may also be configured to include a board or pointing device. Furthermore, the back of the enclosure or On the side, there are external connection terminals (earphone jack, USB terminal, or AC adapter and USB A configuration that includes terminals that can connect to various cables such as cables, a recording medium insertion section, and so on. It may also be done this way. Furthermore, the eBook 2700 is configured to have the functionality of an electronic dictionary. That's fine.

[0232] Furthermore, the e-book 2700 may be configured to transmit and receive information wirelessly. By wireless means, The system will be configured to allow users to purchase and download desired book data from an e-book server. It is also possible.

[0233] In the connection structure between the first oxide semiconductor layer and the wiring layer of a nonlinear element, the first oxide semiconductor layer The region that is bonded to the oxide semiconductor layer, which has higher electrical conductivity, or by plasma treatment By incorporating a modified region, more stable operation can be achieved compared to using only metal wiring. This becomes possible. This enhances the function of the protection circuit and stabilizes its operation. Also, The nonlinear elements are designed to stabilize operation and are less prone to defects caused by thin film peeling. It is possible to manufacture highly reliable electronic paper with built-in protection circuits.

[0234] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is Electronic paper, which boasts excellent reliability and incorporates a protection circuit using its nonlinear elements, is also reliable. They are highly reliable.

[0235] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0236] (Embodiment 9) A semiconductor device according to one aspect of the present invention can be applied to various electronic devices (including amusement machines). This can be done. As for electronic devices, for example, television equipment (television, or television) (Also called a receiver), monitors for computers, cameras such as digital cameras, digital Digital video cameras, digital photo frames, mobile phones (both mobile phones and mobile phone devices) (Examples include) portable game consoles, personal digital assistants, audio playback devices, and large game machines such as pachinko machines. These are some examples.

[0237] Figure 24(A) shows an example of the television equipment 9600. In the case of 00, the display unit 9603 is incorporated into the housing 9601. The display unit 9603 displays It is possible to display an image. Also, here, the stand 9605 is used to display the housing 9601 This shows a configuration that supports this.

[0238] The television unit 9600 is operated using the control switches on the housing 9601 and a separate remote control. This can be done using the control unit 9610. The remote control unit 9610 has control keys The 9609 allows you to control the channel and volume, and the information is displayed on the display unit 9603. The video can be controlled. Furthermore, the remote control unit 9610 can be controlled by the remote control unit. A display unit 9607 may be provided to display the information output from 9610.

[0239] The television system 9600 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and furthermore, it can receive them via a modem, either wired or wireless. By connecting to the communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0240] Figure 24(B) shows an example of the digital photo frame 9700. For example, The photo frame 9700 has a display unit 9703 integrated into the housing 9701. Section 9703 is capable of displaying various images, such as those captured by a digital camera. By displaying the image data, it can function just like a regular photo frame.

[0241] The Digital Photo Frame 9700 includes an operating unit and external connection terminals (USB terminal, USB port). A structure that includes terminals that can connect to various cables such as B cables, a recording medium insertion section, etc. These components may be incorporated on the same surface as the display unit, but may also be on the sides or back. It is desirable to include it as it improves the design. For example, the recording medium of a digital photo frame. A memory device containing image data captured by a digital camera is inserted into the body insertion site. The system can capture data and display the captured image data on the display unit 9703.

[0242] Furthermore, the 9700 digital photo frame may be configured to transmit and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly.

[0243] Figure 25(A) shows a portable gaming machine, which consists of two casings, casing 9881 and casing 9891. It is connected by a connecting part 9893 so that it can be opened and closed. The housing 9881 has a display unit The 9882 is incorporated, and the display unit 9883 is incorporated into the housing 9891. The portable gaming machine shown in 25(A) also includes a speaker section 9884 and a recording medium insertion section 988 6. LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration Equipped with a function to measure motion, odor, or infrared radiation, a microphone (9889), etc. Of course, the configuration of portable gaming machines is not limited to those described above, and at least the present invention Any configuration that includes a semiconductor device according to one embodiment is acceptable, and other auxiliary equipment may be provided as appropriate. It can be made to be completed. The portable gaming machine shown in Figure 25(A) is recorded on a recording medium. Functions include reading programs or data and displaying them on the display unit, and wireless communication with other portable gaming machines. It has the function of communicating and sharing information. Furthermore, the portable gaming machine shown in Figure 25(A) has this function. The functions are not limited to these, and it can have a variety of functions.

[0244] Figure 25(B) shows an example of a large-scale gaming machine, the slot machine 9900. The machine 9900 has a display unit 9903 integrated into the casing 9901. The Machine 9900 also features other operating mechanisms such as a start lever and stop switch, and coins. It is equipped with an input slot, speaker, etc. Of course, the configuration of the slot machine 9900 is as described above. The invention is not limited to any particular type of semiconductor device, but any configuration comprising a semiconductor device according to at least one aspect of the present invention is acceptable. Furthermore, the configuration may include other auxiliary equipment as appropriate.

[0245] Figure 26 shows an example of a mobile phone 1000. The mobile phone 1000 has a housing 100 In addition to the display unit 1002 incorporated into 1, there are also operation buttons 1003, an external connection port 1004, It is equipped with speaker 1005, microphone 1006, etc.

[0246] The mobile phone 1000 shown in Figure 26 allows information to be entered by touching the display unit 1002 with a finger or the like. It can be powered. Also, operations such as making a phone call or sending an email are performed on the display unit 100. This can be done by touching step 2 with your finger or other object.

[0247] The display unit 1002 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0248] For example, when making a phone call or composing an email, the display unit 1002 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. It seems so.

[0249] Furthermore, the mobile phone 1000 contains sensors that detect tilt, such as a gyroscope and an accelerometer. By providing a detection device, the orientation (vertical or horizontal) of the mobile phone 1000 can be determined, and the display The display on the display unit 1002 can be automatically switched.

[0250] Furthermore, the screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. This is done by operating button 1003. Also, the type of image displayed on display unit 1002 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0251] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1002 is detected and displayed If there is no input via touch operation on unit 1002 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0252] The display unit 1002 can also function as an image sensor. For example, the display unit 10 By touching the palm or fingers to device 02, the device can capture palm prints, fingerprints, etc., to perform identity verification. It can also be used. In addition, the display unit has a backlight that emits near-infrared light or a sensor that emits near-infrared light. Using a light source designed for imaging, it is also possible to image finger veins, palmar veins, and other veins.

[0253] In the connection structure between the first oxide semiconductor layer and the wiring layer of a nonlinear element, the first oxide semiconductor layer The region that is bonded to the oxide semiconductor layer, which has higher electrical conductivity, or by plasma treatment By incorporating a modified region, more stable operation can be achieved compared to using only metal wiring. This becomes possible. This enhances the function of the protection circuit and stabilizes its operation. Also, The nonlinear elements are designed to stabilize operation and are less prone to defects caused by thin film peeling. It is possible to manufacture highly reliable electronic devices equipped with protection circuits.

[0254] Furthermore, if the first oxide semiconductor layer is damaged, the electrical properties of the nonlinear element will be impaired. Furthermore, the channel formation region of the first oxide semiconductor layer of the nonlinear element in this embodiment provides channel protection. Because it is protected by a layer, the etching process of the conductive film that will become the source electrode and drain electrode During the etching process of the second oxide semiconductor layer, the first oxide semiconductor layer is damaged. There is no fear. Therefore, a nonlinear element in which the channel formation region is protected by a channel protection layer is It boasts excellent reliability, and electronic devices equipped with protection circuits using these nonlinear elements also have high reliability. It excels in this area.

[0255] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case. [Explanation of Symbols]

[0256] 10 circuit boards 11 terminals 12 terminals 13 scan lines 14 signal lines 16 Guard Station 17 Pixel section 18 pixels 19 Pixel Transistors 20 Holding capacity section 21 Pixel electrodes 22 Capacity lines 23 Common terminals 24 Protection circuit 25 Protection circuit 26 Protection circuit 27 Capacity bus lines 28 Common Wiring 29 Common Wiring 30 Nonlinear elements 30a Nonlinear element 30b Nonlinear element 31 Nonlinear elements 31a Nonlinear element 31b Nonlinear element 38 wiring layer 39 Wiring layer 100 circuit boards 101 Guard Station 102 Gate Insulation Layer 103 Oxide semiconductor layer 104a Oxide semiconductor layer 104b Oxide semiconductor layer 105a Conductive layer 105b conductive layer 107 Protective insulating film 108 scan lines 110 wiring layer 111 Oxide semiconductor layer 125 Contact Holes 128 contact holes 131 Resist Mask 132 Conductive film 133 channel protection layer 135 Insulating layer 136 Insulating layer 170a Nonlinear element 170b Nonlinear element 270a Nonlinear element 580 circuit boards 581 Thin-film transistor 583 Insulating layer 585 Insulating layer 587 Electrode layer 588 Electrode layer 589 Spherical particles 590a black area 590b White area 594 Cavity 595 Filling material 730a Nonlinear element 730b Nonlinear element 730c nonlinear element 740a Nonlinear element 740b nonlinear element 740c nonlinear element 740d Nonlinear element 1000 mobile phones 1001 enclosure 1002 Display section 1003 Operation Buttons 1004 External connection port 1005 Speaker 1006 Mike 2600 TFT substrate 2601 Opposing substrate 2602 Sealant 2603 pixel section 2604 display elements 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible Wiring Board 2610 cold cathode tube 2611 Reflector 2612 Circuit board 2613 Diffuser 2631 Poster 2632 In-car advertisement 2700 eBooks 2701 enclosure 2703 Casing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Keys 2725 Speaker 4001 circuit board 4002 pixel section 4003 Signal Line Drive Circuit 4004 Scan Line Drive Circuit 4005 Sealant 4006 circuit board 4008 Liquid Crystal Layer 4010 Thin-Film Transistor 4011 Thin-film transistor 4013 Liquid crystal element 4015 Connection terminal electrode 4016 Terminal electrode 4018 FPC 4019 Anisotropic conductive film 4020 Insulating layer 4021 Insulating layer 4030 Pixel electrode layer 4031 Counter electrode layer 4032 Insulating layer 4501 circuit board 4502 pixel section 4503a Signal Line Drive Circuit 4504a Scan line drive circuit 4505 Sealant 4506 circuit board 4507 Filling material 4509 Thin-film transistor 4510 Thin-Film Transistor 4511 Light-emitting element 4512 Electroluminescent layer 4513 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4518a FPC 4519 Anisotropic conductive film 4520 Bulkhead 5300 circuit boards 5301 pixel section 5302 Scan line drive circuit 5303 Signal Line Drive Circuit 5400 circuit boards 5401 pixel section 5402 Scan Line Drive Circuit 5403 Signal Line Drive Circuit 5404 Scan Line Drive Circuit 5501 Wiring 5502 Wiring 5503 Wiring 5504 Wiring 5505 Wiring 5506 Wiring 5543 nodes 5544 nodes 5571 Thin-film transistor 5572 Thin-film transistor 5573 Thin-film transistor 5574 Thin-film transistor 5575 Thin-film transistor 5576 Thin-film transistor 5577 Thin-film transistor 5578 Thin-film transistor 5601 Driver IC 5602 switch group 5603a Thin-film transistor 5603b Thin-film transistor 5603c Thin-Film Transistor 5611 Wiring 5612 Wiring 5613 Wiring 5621 Wiring 5701 Flip-flop 5703a Timing 5703b Timing 5703c Timing 5711 Wiring 5712 Wiring 5713 Wiring 5714 Wiring 5715 Wiring 5716 Wiring 5717 Wiring 5721 Signal 5803a Timing 5803b Timing 5803c Timing 5821 Signal 6400 pixels 6401 Switching Transistor 6402 drive transistor 6403 Capacitive element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 7001 TFT 7002 Light-emitting element 7003 Cathode 7004 Emitting layer 7005 Anode 7011 Drive TFT 7012 Light-emitting element 7013 Cathode 7014 Emitting layer 7015 Anode 7016 Shielding membrane 7017 Conductive film 7021 Drive TFT 7022 Light-emitting element 7023 Cathode 7024 Emitting layer 7025 Anode 7027 Conductive film 9600 Television equipment 9601 enclosure 9603 Display section 9605 Stand 9607 Display section 9609 Operation Keys 9610 Remote Control Unit 9700 Digital Photo Frame 9701 enclosure 9703 Display section 9881 cabinet 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation Keys 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 cabinet 9893 Connection section 9900 slot machines 9901 cabinet 9903 Display section

Claims

1. A semiconductor device having a protection circuit comprising a first transistor and a second transistor, A first conductive layer having the function of a gate electrode of the first transistor, A second conductive layer having the function of a gate electrode of the second transistor, A first oxide semiconductor layer having a region located on the first conductive layer, A second oxide semiconductor layer having a region located on the second conductive layer, A third conductive layer having a region located on the first oxide semiconductor layer and a region located on the second oxide semiconductor layer, and having the function of one of the source electrode and drain electrode of the first transistor and the function of one of the source electrode and drain electrode of the second transistor, A fourth conductive layer having a region located on the first oxide semiconductor layer and a region located on the second oxide semiconductor layer, and having the function of the other of the source electrode and drain electrode of the first transistor and the function of the other of the source electrode and drain electrode of the second transistor, In cross-sectional view, the first insulating layer has a region located between the first conductive layer and the first oxide semiconductor layer, The invention comprises a second insulating layer having a region in contact with the upper surface of the first insulating layer, In a plan view, the third conductive layer has a region that intersects with the first conductive layer. In a plan view, the fourth conductive layer has an overlap with the first conductive layer and does not have a region that intersects with the first conductive layer. The second insulating layer has a first opening in the region overlapping with the third conductive layer. The second insulating layer has a second opening in the region overlapping with the second conductive layer. The first insulating layer has a third opening in the region overlapping with the second conductive layer. The second insulating layer has a fourth opening in the region overlapping with the fourth conductive layer. The second insulating layer has a fifth opening in the region overlapping with the first conductive layer. The first insulating layer has a sixth opening in the region overlapping with the first conductive layer. The third opening overlaps with the second opening. The fifth opening overlaps with the sixth opening, The second oxide semiconductor layer is electrically connected to the second conductive layer through the first to third openings, The first oxide semiconductor layer is electrically connected to the first conductive layer through the fourth to sixth openings, In a plan view, the channel length direction of the second transistor has a region that extends in the first direction, In a plan view, the first opening and the second opening have regions arranged side by side along the first direction, A semiconductor device in which, in a plan view, the first oxide semiconductor layer has a region located between the fourth opening and the third conductive layer along the first direction.

2. A semiconductor device having a protection circuit comprising a first transistor and a second transistor, A first conductive layer having the function of a gate electrode of the first transistor, A second conductive layer having the function of a gate electrode of the second transistor, A first oxide semiconductor layer having a region located on the first conductive layer, A second oxide semiconductor layer having a region located on the second conductive layer, A third conductive layer having a region located on the first oxide semiconductor layer and a region located on the second oxide semiconductor layer, and having the function of one of the source electrode and drain electrode of the first transistor and the function of one of the source electrode and drain electrode of the second transistor, A fourth conductive layer having a region located on the first oxide semiconductor layer and a region located on the second oxide semiconductor layer, and having the function of the other of the source electrode and drain electrode of the first transistor and the function of the other of the source electrode and drain electrode of the second transistor, In cross-sectional view, the first insulating layer has a region located between the first conductive layer and the first oxide semiconductor layer, The invention comprises a second insulating layer having a region in contact with the upper surface of the first insulating layer, In a plan view, the third conductive layer has a region that intersects with the first conductive layer. In a plan view, the fourth conductive layer has an overlap with the first conductive layer and does not have a region that intersects with the first conductive layer. The second insulating layer has a first opening in the region overlapping with the third conductive layer. The second insulating layer has a second opening in the region overlapping with the second conductive layer. The first insulating layer has a third opening in the region overlapping with the second conductive layer. The second insulating layer has a fourth opening in the region overlapping with the fourth conductive layer. The second insulating layer has a fifth opening in the region overlapping with the first conductive layer. The first insulating layer has a sixth opening in the region overlapping with the first conductive layer. The third opening overlaps with the second opening. The fifth opening overlaps with the sixth opening, The second oxide semiconductor layer is electrically connected to the second conductive layer through the first to third openings, The first oxide semiconductor layer is electrically connected to the first conductive layer through the fourth to sixth openings, In a plan view, the channel length direction of the first transistor has a region extending in the first direction, In a plan view, the channel length direction of the second transistor has a region that extends in the first direction, In a plan view, the first opening and the second opening have regions arranged side by side along the first direction, A semiconductor device in which, in a plan view, the first oxide semiconductor layer has a region located between the fourth opening and the third conductive layer along the first direction.

3. In claim 1 or 2, The second opening does not overlap with the second oxide semiconductor layer. A semiconductor device wherein the third opening does not overlap with the second oxide semiconductor layer.

4. In any one of claims 1 to 3, The semiconductor device wherein the first insulating layer has a laminated structure.

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