Sensor device

Abstract

The present invention provides a sensor device that exhibits a measurement frequency significantly exceeding 200 kHz for measuring pressure. [Solution] The sensor device 1 comprises a base 10 and a sensor material 20, wherein the base diaphragm 11 can be deflected under the influence of pressure P, the sensor material 20 is arranged in several areas on the base diaphragm 11 and generates piezoelectric charges Q20+, Q20- under the influence of the deflection of the base diaphragm 11, the sensor device 1 comprises at least one compensator material 30, the compensator material 30 is arranged in several areas on the base 10, the sensor material 20 generates pyroelectric charges P20+, P20- under the influence of a temperature change ΔT, the compensator material 30 generates pyroelectric charges P30+, P30- under the influence of a temperature change ΔT, and the pyroelectric charges P30+, P30- generated by the compensator material 30 cancel out the pyroelectric charges P20+, P20- generated by the sensor material 20.

Description

[Technical Field]

[0001] The present invention relates to a sensor device using a preamble according to an independent claim. [Background technology]

[0002] Sensor devices are well known. They are used in various ways to measure pressure, temperature, and other parameters.

[0003] Therefore, sensor devices that measure pressure according to the piezoelectric measurement principle are known. For this purpose, they include piezoelectric materials such as quartz (SiO2) and gallium orthophosphate (GaPO4), which generate piezoelectric charges under the influence of the pressure being measured. The piezoelectric charges are generated on the surface of the piezoelectric material and tapped by electrodes. The amount of piezoelectric charge generated is proportional to the magnitude of the pressure being measured.

[0004] Piezoelectric materials such as SiO2 and GaPO4 exhibit extremely high profile rigidity. This high profile rigidity allows piezoelectric sensor devices to exhibit high natural frequencies exceeding 500 kHz. This high natural frequency makes piezoelectric sensor devices very suitable for dynamic pressure measurement. In principle, the maximum measurement frequency is one-third of the natural frequency.

[0005] Such a piezoelectric sensor device for dynamic measurement of pressure is sold by the applicant under the designation Model 603C. In Model 603C, piezoelectric material in the form of multiple discs is spaced axially from a diaphragm by a base plate. The pressure to be measured acts as a force on the piezoelectric material through the diaphragm and the base plate. Since piezoelectric materials such as SiO2 and GaPO4 are brittle and may break under localized pressure peaks, the base plate ensures a uniform distribution of pressure on the piezoelectric material. The maximum measurement frequency of Model 603C is approximately 200 kHz. The technical specifications of Model 603C are described in data sheet 603C_003-288e-11.22.

[0006] Currently, users of pressure measurement sensor devices are seeking to further increase the measurement frequency. [Overview of the project] [Problems that the invention aims to solve]

[0007] The object of the present invention is to provide a sensor device that exhibits a measurement frequency significantly exceeding 200 kHz for measuring pressure. [Means for solving the problem]

[0008] This objective is resolved by the features of the independent claim.

[0009] The present invention relates to a sensor device arranged for measuring pressure, comprising at least one substrate and at least one sensor material, wherein the substrate is formed in several areas as a substrate diaphragm, the substrate diaphragm is designed to sense the pressure to be measured, the substrate diaphragm can be deflected under the influence of pressure, the sensor material is arranged in several areas on the substrate diaphragm, the sensor material generates piezoelectric charges by the deflection of the substrate diaphragm, the amount of piezoelectric charges generated is proportional to the magnitude of the pressure to be measured, and the sensor device comprises at least one compensator material, the compensator material is arranged in several areas on the substrate, the sensor material generates pyroelectric charges under the influence of temperature changes, the compensator material generates pyroelectric charges under the influence of temperature changes, and the pyroelectric charges generated by the compensator material cancel out the pyroelectric charges generated by the sensor material.

[0010] An advantageous embodiment of the present invention is protected in the dependent claims.

[0011] The present invention will be described in more detail below with reference to the figures. [Brief explanation of the drawing]

[0012] [Figure 1]It is a partial plan view of a first embodiment of a sensor device 1 having a pressure sensor 1P for measuring pressure P and having a compensator 1K. [Figure 2] It is a partial cross-sectional view of the sensor device 1 shown in FIG. 1 along the cross-sectional path B-B. [Figure 3] It is a partial plan view of a second embodiment of the sensor device 1 having a group of pressure sensors 1P shown in FIGS. 1 and 2 and having a group of compensators 1K. [Figure 4] It is a diagram showing curves of the amounts of pyroelectric charges P20+, P30+, P20-, P30- generated under the influence of the temperature change ΔT of the sensor device 1 shown in FIGS. 1 to 3. [Figure 5] It is a partial schematic circuit diagram of a first embodiment of the sensor device 1 having the pressure sensor 1P shown in FIGS. 1 and 2, having a compensator 1K, having a transmission device 5, having a converter unit 6, and having an evaluation unit 7. [Figure 6] It is a partial schematic circuit diagram of a second embodiment of the sensor device 1 having a group of pressure sensors 1P shown in FIG. 3, having a group of compensators 1K, having a transmission device 5, having a converter unit 6, and having an evaluation unit 7.

MODE FOR CARRYING OUT THE INVENTION

[0013] The same reference numerals indicate the same objects in the figures.

[0014] The sensor device 1 has a function of measuring the pressure P.

[0015] The sensor device 1 includes at least one pressure sensor 1P for measuring the pressure P and at least one compensator 1K.

[0016] Furthermore, the sensor device 1 shown in FIGS. 5 and 6 includes at least one transmission device 5, at least one converter unit 6, and at least one evaluation unit 7.

[0017] In FIGS. 1 to 3, the sensor device 1 is shown in a three-dimensional coordinate system having a horizontal axis X, a lateral axis Y, and a vertical axis Z. The three axes X, Y, and Z are perpendicular to each other. The horizontal axis X and the lateral axis Y extend across the horizontal plane XY. FIGS. 1 and 3 show embodiments of the sensor device 1 in a plan view in the horizontal plane XY. FIG. 2 shows the sensor device 1 in a cross-sectional view.

[0018] Substrate 10 The sensor device 1 includes at least one substrate 10. The substrate 10 has a function of sensing the measured pressure P.

[0019] The substrate 10 is made of an electrically insulating material such as silicon or glass. Silicon has a specific electrical resistance of 10 7 Ωm or more at room temperature (20 °C). Glass has a specific electrical resistance of 10 11 Ωm or more at 20 °C.

[0020] The substrate 10 has a front side and a rear side. On the front side, the substrate 10 forms a support surface. The support surface is arranged in the horizontal plane XY. The support surface is 3 mm × 3 mm or less, preferably 2 mm × 2 mm or less. On the rear side, the substrate 10 forms a substrate opening 12.

[0021] Preferably, the substrate 10 is a silicon-on-insulator (SOI) having the following functional layers. - The support layer 13 is made of silicon and has a thickness along the vertical axis Z in the range of 200 to 500 μm, preferably 400 μm. The support layer 13 exhibits a support function for the components of the sensor device 1. - The boundary layer 14 made of silicon has a thickness along the vertical axis Z in the range of 100 to 2 μm, preferably it has a thickness of 50 μm, preferably it has a thickness of 5 μm. The boundary layer 14 has a function of forming a substrate diaphragm 11 in some areas. The boundary layer 14 defines the boundary of the substrate 10 in the horizontal plane XY. - The stopping layer 15 has a thickness of 1 μm along the vertical axis Z and is positioned along the vertical axis Z between the support layer 13 and the boundary layer 14. The stopping layer 15 is made of an oxide material and is 10 at 20°C 12 It has an electrical resistivity of Ωm or more. Therefore, the function of the stop layer 15 is to electrically insulate the boundary layer 14 from the support layer 13. The stop layer 15 also has the further function of stopping etching in the creation of substrate openings 12 by chemical etching in the substrate 10. Thereafter, silicon is etched away along the vertical axis Z on the rear side of the substrate 10 up to the stop layer 15.

[0022] The base diaphragm 11 is designed to sense the pressure P to be measured. The base diaphragm 11 has two surfaces F11 and F12. The two surfaces F11 and F12 include a front surface F11 and a rear surface F12. The front surface F11 is located on the front side of the base 10 in the horizontal plane XY. The pressure P acts on the front surface F11 along the vertical axis Z. The front surface F11 faces in the direction from which the pressure P acts. The rear surface of the base diaphragm 11 defines a base opening 12 on the rear side of the base 10. Under the influence of the pressure P, the base diaphragm 11 can be deflected along the vertical axis Z towards the base opening 12.

[0023] The base diaphragm 11 has a thickness T11 of 20 μm or less, preferably 10 μm or less, and preferably 5 μm or less. The base diaphragm 11 has a diameter D11 of 300 μm or less, preferably 200 μm or less, and preferably 100 μm or less. The ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 is selected so that the sensor device 1 has a natural frequency f1 of 1 MHz or more. Advantageously, the ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 is 1.7. -2 From 5.0 10 -2 This is within the range. An exemplary ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 results in the following natural frequency f1. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 300 μm, as a result, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 1.7×10 -2 equals, and the natural frequency f1 exceeds 1 MHz. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 200 μm, as a result, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 2.5×10 -2 equals, and the natural frequency f1 exceeds 2.5 MHz. - For the thickness T11 of the substrate diaphragm 11 equal to 5 μm and the diameter D11 of the substrate diaphragm 11 equal to 100 μm, as a result, the ratio of the thickness T11 to the diameter D11 of the substrate diaphragm 11 is 5.0×10 -2 equals, and the natural frequency f1 exceeds 10 MHz.

[0024] In contrast to the piezoelectric sensor device of type 603C having a metal diaphragm made of stainless steel 17 - 4PH, the substrate diaphragm 11 according to the present invention is made of silicon. Compared with stainless steel 17 - 4PH having a density of 7.8 g / cm 3 silicon has a density of 2.3 g / cm 3 . Therefore, the substrate diaphragm 11 according to the present invention is less than one - third lighter, thereby further increasing the natural frequency f1 of the sensor device 1.

[0025] Sensor material 20 The sensor device 1 includes at least one sensor material 20. The sensor material 20 has a function of generating a measured value for the measured pressure P.

[0026] The sensor material 20 is piezoelectric and is quartz (SiO2), gallium orthophosphate (GaPO4), calcium gallogermanate (Ca3Ga2Ge4O 14 or CGG), langasite (La3Ga5SiO 14It consists of materials such as (or LGS), tourmaline, aluminum nitride (AlN), lead zirconate titanate (PZT), scandium aluminum nitride (Al(1-x)Sc(x)N, x=0..0.4), and sodium potassium niobate (K(x)Na(1-x)NbO3, x=0.2...0.5).

[0027] The sensor material 20 is placed on the substrate 10. Preferably, the sensor material 20 is placed on the front side of the substrate 10 in at least one region of the substrate diaphragm 11.

[0028] Preferably, the sensor material 20 is arranged in several areas on the front surface F11 of the base diaphragm 11. The sensor material 20 forms a layer extending in the horizontal plane XY. In the horizontal plane XY, the sensor material 20 has a bottom surface D20. The bottom surface D20 is greater than or equal to the diameter D11 of the base diaphragm 11. The sensor material 20 has a constant thickness T20 along the vertical axis Z. The thickness T20 is 10 μm or less, preferably 5 μm or less, and preferably 1 μm or less.

[0029] In the piezoelectric sensor device of type 603C, the sensor material is in the form of three discs, each with a thickness of 0.2 mm and a diameter of 3.5 mm. When viewed from the axial direction, the discs are spaced from the diaphragm by a metal base plate having a thickness of 0.6 mm and a diameter of 3.5 mm. In contrast to the piezoelectric sensor device of type 603, the sensor material 20 is arranged as a thin layer on the substrate diaphragm 11 according to the present invention. The thickness T20 of the thin layer is 10 μm or less. This means that there are no discs with the sensor material and the metal base plate is also omitted, thereby reducing the weight of the sensor device 1 according to the present invention. Furthermore, since the natural frequency f1 is inversely proportional to the weight of the sensor device 1, the natural frequency f1 of the sensor device 1 increases due to the absence of discs with the sensor material and the metal base plate.

[0030] Under the influence of the measured pressure P, the sensor material 20 generates piezoelectric charges Q20+ and Q20- as measured values. The pressure P acts along the vertical axis Z on one side of the front surface F11 of the substrate diaphragm 11, causing the substrate diaphragm 11 to flex. In Figure 2, the pressure P is schematically shown as an arrow. The piezoelectric material 20 generates piezoelectric charges Q20+ and Q20- as a result of the flexing of the substrate diaphragm 11. The amount of piezoelectric charges Q20+ and Q20- generated is proportional to the magnitude of the measured pressure P. The durable operating temperature range of the sensor material 20 is from -40°C to +500°C.

[0031] Piezoelectric charges Q20+ and Q20- are generated on multiple surfaces of the sensor material 20, which are parallel to the horizontal plane XY. The piezoelectric charges Q20+ and Q20- include a first piezoelectric charge Q20+ and a second piezoelectric charge Q20-. In the cross-section of Figure 2, the first piezoelectric charge Q20+ is generated on the surface of the sensor material 20 facing away from the substrate diaphragm 11, and the second piezoelectric charge Q20- is generated on the surface of the sensor material 20 facing the substrate diaphragm 11. As described below, the first piezoelectric charge Q20+ is preferably converted into a pressure signal PS, and the second piezoelectric charge Q20- is preferably used as a ground potential signal MS.

[0032] The sensitivity σ of the sensor device 1 is extremely important. Sensitivity σ is the ratio of the measured value to the input value of the pressure P being measured. Sensitivity σ decreases cubically with increasing thickness T11 of the base diaphragm 11. Furthermore, it decreases quadratically with decreasing diameter D11 of the base diaphragm 11. Therefore, the sensitivity σ of the sensor device 1 decreases with increasing ratio of thickness T11 to diameter D11 of the base diaphragm 11. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 300 μm, and as a result, 1.7 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to the given ratio, the sensitivity σ in sensor direction 1 is approximately 5 pC / bar. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 200 μm, and as a result, 2.5 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to σ, the sensitivity σ in sensor direction 1 is approximately 0.5 pC / bar. - The thickness T11 of the substrate diaphragm 11 is equal to 5 μm, and the diameter D11 of the substrate diaphragm 11 is equal to 100 μm, resulting in 5.0 10 -2 For a ratio of the thickness T11 to the diameter D11 of the base diaphragm 11 that is equal to σ, the sensitivity σ in sensor direction 1 is approximately 0.05 pC / bar.

[0033] Compensator material 30 The sensor device 1 comprises at least one compensator material 30. The compensator material 30 has the function of canceling out the pyroelectric effect of the sensor material 20 of the sensor device 1.

[0034] Certain sensor materials 20, such as CGG, LGS, tourmaline, AlN, and PZT, exhibit direct and / or indirect pyroelectric effects, where a temperature change ΔT results in the generation of pyroelectric charges P20+ and P20-. These pyroelectric charges P20+ and P20- are generated on the same surface of the sensor material 20 as the piezoelectric charges Q20+ and Q20-. Therefore, the measurement of pressure P is distorted by any temperature change ΔT. In the embodiments of the sensor device 1 shown in Figures 1 to 3, the sensor material 20 exhibits a pyroelectric effect.

[0035] The compensator material 30 is preferably made of the same materials as the sensor material 20, such as CGS, LGS, tourmaline, AlN, or PZT. Figure 4 shows the curves of the amount of pyroelectric charges P20+, P30+, P20-, and P30- generated with respect to a temperature change ΔT. The temperature T is represented on the horizontal axis over the range of the durable operating temperatures of the sensor material 20 and compensator material 30, from -40°C to +500°C. The vertical axis represents the pyroelectric charges P+-. The amount of pyroelectric charges P20+, P30+, P20-, and P30- generated is proportional to the size of the bottom surface D20 of the sensor material 20 and the size of the bottom surface D30 of the compensator material 30. For example, with respect to a temperature change ΔT, the curve of the amount of pyroelectric charges P20+, P30+, P20-, and P30- generated is S-shaped. The slope of the curve reflects the sensitivity of the sensor material 20 and compensator material 30 to the pyroelectric effect. This sensitivity ranges from 0.1 pC / °C to 0.5 pC / °C.

[0036] The compensator material 30 is placed on the substrate 10. Preferably, the compensator material 30 is placed in at least one region on the front side of the substrate 10. Preferably, the compensator material 30 is placed outside the substrate diaphragm 11. The compensator material 30 forms a layer extending in the horizontal plane XY. In the horizontal plane XY, the compensator material 30 has a bottom surface D30. Preferably, the bottom surface D30 is the same size as the bottom surface D20 of the sensor material 20. Along the vertical axis Z, the compensator material 30 has a constant thickness T30. Preferably, the thickness T30 of the compensator material 30 is the same as the thickness T20 of the sensor material 20. The thickness T30 is 10 μm or less, preferably 5 μm or less, and preferably 1 μm or less.

[0037] Since the compensator material 30 is positioned outside the base diaphragm 11, the measured pressure P does not act on the compensator material 30 because the base 10 does not experience any deflection due to the pressure P, and therefore the compensator material 30 does not generate any piezoelectric charge as a measured value. Preferably, the sensor material 20 and the compensator material 30 have the same structure. Preferably, the size of the bottom surface D20 of the sensor material 20 is equal to the size of the bottom surface D30 of the compensator material 30. Preferably, the ratio of the size of the bottom surface D20 of the sensor material 20 to the size of the bottom surface D30 of the compensator material 30 is known.

[0038] Just as the sensor material 20 generates pyroelectric charges P20+ and P20- on multiple surfaces parallel to the horizontal plane XY, the compensator material 30 also generates pyroelectric charges P30+ and P30- on multiple surfaces parallel to the horizontal plane XY. The pyroelectric charges P20+, P30+, P20-, and P30- include a first pyroelectric charge P20+ and P30+ and a second pyroelectric charge P20- and P30-. In the cross-section of Figure 2, the first pyroelectric charge P20+ is generated on the surface of the sensor material 20 facing away from the substrate diaphragm 11, and the second pyroelectric charge P20- is generated on the surface of the sensor material 20 facing the substrate diaphragm 11. In the case of the compensator material 30, the first pyroelectric charge P30+ is generated on the surface of the compensator material 30 facing away from the substrate 10, and the second pyroelectric charge P30- is generated on the surface of the compensator material 30 facing the substrate 10.

[0039] Pressure sensor 1P The sensor device 1 comprises a plurality of sensor electrodes 21 and 23. The sensor electrodes 21 and 23 have the function of tapping piezoelectric charges Q20+ and Q20- from the surface of the sensor material 20.

[0040] The sensor electrodes 21 and 23 are positioned on a region of the surface of the sensor material 20 where piezoelectric charges Q20+ and Q20- are generated. The sensor electrodes 21 and 23 include a first sensor electrode 21 and a second sensor electrode 23. The sensor electrodes 21 and 23 are made from conductive materials such as silver (Ag), gold (Au), and platinum (Pt).

[0041] In the cross-section of Figure 2, the first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first piezoelectric charge Q20+. The second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second piezoelectric charge Q20-. Each of the two sensor electrodes 21 and 23 forms a layer extending parallel to the horizontal plane XY. Parallel to the horizontal plane XY, the first sensor electrode 21 has a first sensor bottom surface D21, and the second sensor electrode 23 has a second sensor bottom surface D23. Along the vertical axis Z, each of the two sensor electrodes 21 and 23 exhibits a constant thickness of 200 nm or less.

[0042] Compared to a piezoelectric sensor device of type 603C, whose diaphragm has a diameter of 5.5 mm, the base diaphragm 11 according to the present invention is about one-tenth the size. The base diaphragm 11 is miniaturized. The surface of the diaphragm of type 603C has spaces equivalent to more than 100 base diaphragms 11 according to the present invention. The base diaphragm 11, the sensor material 20 placed thereon, and the sensor electrodes 21, 23 placed on the surface of the sensor material 20 form a miniaturized pressure sensor 1P, which not only generates piezoelectric charges Q20+, Q20- in relation to the pressure P to be measured, but also includes sensor electrodes 21, 23 for tapping the piezoelectric charges Q20+, Q20- from the surface of the sensor material 20.

[0043] The profile stiffness of the base diaphragm 11 is not constant across its diameter D11. While the profile stiffness is constant in the central area of ​​the base diaphragm 11 along the vertical Z direction, it increases in the peripheral areas transitioning to the stop layer 15 and the support layer 13. This increase in profile stiffness in the peripheral areas of the base diaphragm 11 also reduces the sensitivity σ of the sensor device 1, and consequently the amount of piezoelectric charges Q20+ and Q20- generated. This reduction in the sensitivity σ of the sensor device 1 in the peripheral areas of the base diaphragm 11 distorts the measurement of pressure P. To avoid this reduction in the sensitivity σ of the sensor device 1 in the peripheral areas of the base diaphragm 11, preferably, the first piezoelectric charge Q20+ is not tapped there at all, and this first piezoelectric charge Q20+ is preferably used as the pressure signal PS. Therefore, the diameter of the first sensor bottom surface D21 to which the first piezoelectric charge Q20+ is tapped is smaller than the diameter D11 of the base diaphragm 11. Preferably, the diameter of the first sensor bottom surface D21 is 80% or less, preferably 60% or less, of the diameter D11 of the base diaphragm 11.

[0044] On the other hand, the second sensor bottom surface D23 to which the second piezoelectric charge Q20- is tapped is preferably such that the second piezoelectric charge Q20- is used as a ground potential signal MS, and is preferably greater than or equal to the diameter D11 of the substrate diaphragm 11.

[0045] The sensor device 1 is equipped with a plurality of sensor contacts 22 and 24. The sensor contacts 22 and 24 have the function of providing electrical contact between the sensor electrodes 21 and 23 and the transmission device 5.

[0046] The sensor contacts 22 and 24 are made of conductive materials such as Ag, Au, and Pt.

[0047] The sensor contacts 22 and 24 include a first sensor contact 22 and a second sensor contact 24. The first sensor contact 22 is positioned on the first sensor electrode 21 and establishes electrical contact with the first sensor electrode 21. The second sensor contact 24 is positioned on the second sensor electrode 23 and establishes electrical contact with the second sensor electrode 23. Each of the two sensor contacts 22 and 24 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0048] The base diaphragm 11, the sensor material 20 positioned on the front surface F11 of the base diaphragm 11, and the sensor electrodes 21 and 23 positioned on the surface of the sensor material 20 form the pressure sensor 1P of the embodiment of the sensor device 1, as shown in Figures 1 to 3. The piezoelectric charges Q20+ and Q20- are measured values ​​of the pressure sensor 1P. The durable operating temperature range of the pressure sensor 1P is from -40°C to +500°C.

[0049] Compensator 1K The sensor device 1 comprises a plurality of compensator electrodes 31 and 33. The compensator electrodes 31 and 33 have the function of tapping pyroelectric charges P30+ and P30- from the surface of the compensator material 30. The first sensor electrode 21 taps the first pyroelectric charge P20+, and the second sensor electrode 23 taps the second pyroelectric charge P20-.

[0050] The compensator electrodes 31 and 33 are positioned in areas of the surface of the compensator material 30 where pyroelectric charges P30+ and P30- are generated. The compensator electrodes 31 and 33 include a first compensator electrode 31 and a second compensator electrode 33. The compensator electrodes 31 and 33 are fabricated from conductive materials such as Ag, Au, and Pt, just like the sensor electrodes 21 and 23.

[0051] In the cross-section shown in Figure 2, the first compensator electrode 31 is positioned on the surface of the compensator material 30 facing away from the substrate 10 and taps a first pyroelectric charge P30+. The second compensator electrode 33 is positioned on the surface of the compensator material 30 facing the substrate 10 and taps a second piezoelectric charge P30-. Each of the two compensator electrodes 31 and 33 forms a layer extending parallel to the horizontal plane XY. Along the vertical axis Z, each of the two compensator electrodes 31 and 33 exhibits a constant thickness of 200 nm or less.

[0052] In the sensor material 20, the pyroelectric charges P20+ and P20- are tapped together with the piezoelectric charges Q20+ and Q20- by the sensor electrodes 21 and 23.

[0053] Preferably, the sensor electrodes 21, 23 and the compensator electrodes 31, 33 have the same structure. Preferably, the area of ​​the sensor electrodes 21, 23 is equal to the area of ​​the compensator electrodes 31, 33. Preferably, the ratio of the area of ​​the sensor electrodes 21, 23 to the area of ​​the compensator electrodes 31, 33 is known.

[0054] The sensor device 1 is equipped with a plurality of compensator contacts 32 and 34. The compensator contacts 32 and 34 have the function of providing electrical contact between the compensator electrodes 31 and 33 and the transmission device 5.

[0055] The compensator contacts 32 and 34 are made of conductive materials such as Ag, Au, and Pt, just like the sensor contacts 22 and 24.

[0056] The compensator contacts 32 and 34 include a first compensator contact 32 and a second compensator contact 34. The first compensator contact 32 is positioned on the first compensator electrode 31 and establishes electrical contact with the first compensator electrode 31. The second compensator contact 34 is positioned on the second compensator electrode 33 and establishes electrical contact with the second compensator electrode 33. Each of the two compensator contacts 32 and 34 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0057] The region of the substrate 10 on which the compensator material 30 is placed, the compensator material 30 placed on the substrate 10, and the compensator electrodes 31 and 33 placed on the surface of the compensator material 30 form the compensator 1K of the embodiment of the sensor device 1, as shown in Figures 1 to 3. The durable operating temperature range of the compensator 1K is from -40°C to +500°C.

[0058] Advantageously, the compensator 1K is positioned at a first horizontal distance DXY of 2 mm or less from the pressure sensor 1P. This small first horizontal distance DXY ensures that the temperature change ΔT acts equally on the sensor material 20 of the pressure sensor 1P and the compensator material 30 of the compensator 1K, generating pyroelectric charges P20+ and P20- in the sensor material 20 and pyroelectric charges P30+ and P30- in the compensator material 30.

[0059] Advantageously, the sensor material 20 generates multiple piezoelectric charges Q20+ and Q20- under the influence of pressure P, and multiple pyroelectric charges P20+ and P20- under the influence of temperature change ΔT. For measurement frequencies f* at up to 1 / 3 of the natural frequency f1 of 1 MHz or higher, the multiple piezoelectric charges Q20+ and Q20- of the sensor material 20 are generated at a rate of 10¹⁶ per second. 6 Representing individual piezoelectric charges Q20+ and Q20-, the multiple pyroelectric charges K20+ and K20- of the sensor material 20 are 10 per second. 6 This represents a number of pyroelectric charges P20+ and P20-. The compensator material 30 generates a large number of pyroelectric charges P30+ and P30- under the influence of a temperature change ΔT. For measurement frequencies f* at up to 1 / 3 of the natural frequency f1 of 1 MHz or higher, the multiple pyroelectric charges P30+ and P30- of the compensator material 30 are generated at a rate of 10 per second. 6 This represents individual pyroelectric charges P30+ and P30-. For each pyroelectric charge P20+ and P20- of the sensor material 20, there exist pyroelectric charges P30+ and P30- corresponding to the time series of the compensator material 30.

[0060] Pressure sensor group 1P According to the second embodiment, the sensor device 1 comprises a base 10 having a plurality of base diaphragms 11.

[0061] Preferably, the multiple substrate diaphragms 11 are arranged on the front side of the substrate 10 in the horizontal plane XY. The pressure P to be measured acts along the direction Z perpendicular to the front surface F11 of the multiple substrate diaphragms 11, causing the multiple substrate diaphragms 11 to flex. In each of the multiple substrate diaphragms 11, the sensor material 20 is arranged in at least one area on the front surface F11 of the substrate diaphragm 11. The sensor material 20 generates piezoelectric charges Q20+ and Q20- as a result of the flexing of the substrate diaphragm 11. In each of the multiple substrate diaphragms 11, a first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first piezoelectric charge Q20+. A second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second piezoelectric charge Q20-.

[0062] According to the second embodiment, the sensor device 1 comprises a plurality of sensor group conductors 25, 27. The sensor group conductors 25, 27 have the function of collecting piezoelectric charges Q20+, Q20-.

[0063] The sensor group conductors 25 and 27 are made of conductive materials such as Ag, Au, and Pt.

[0064] The sensor group conductors 25 and 27 are arranged in two surface regions of the sensor material 20. The sensor group conductors 25 and 27 include a first sensor group conductor 25 and a second sensor group conductor 27. The first sensor group conductor 25 establishes electrical contact with the first sensor electrode 21 and establishes electrical contact with them in series. The second sensor group conductor 27 establishes electrical contact with the second sensor electrode 23 and connects them electrically in series.

[0065] Multiple base diaphragms 11 on which the sensor material 20 is placed on the front surface F11, the sensor material 20 placed on the multiple base diaphragms 11, and the sensor electrodes 21, 23 and sensor group conductors 25, 27 placed on the surface of the sensor material 20 form a pressure sensor group 1P.

[0066] Advantageously, two or more substrate diaphragms 11, preferably 16 or more substrate diaphragms 11, and preferably 128 or more substrate diaphragms 11 are formed on the substrate 10.

[0067] The increase in the natural frequency f1 of the sensor device 1 according to the present invention is achieved by decreasing the ratio of the thickness T11 to the diameter D11 of the base diaphragm 11, and the sensitivity σ of the sensor device 1 according to the present invention is similarly reduced. The sensitivity σ changes quadratically with the diameter D11 of the base diaphragm 11. When the thickness T11 is kept constant, halving the diameter D11 of the base diaphragm 11 reduces the amount of piezoelectric charges Q20+ and Q20- generated to one-quarter. By arranging multiple base diaphragms 11 on a base 10, placing the sensor material 20 on each of the front surfaces F11 of the multiple base diaphragms 11, and connecting sensor electrodes 21 and 23 that tap the piezoelectric charges Q20+ and Q20- of the sensor material 20 in series, the reduction in the sensitivity σ of the sensor device 1 according to the present invention can be compensated for and even improved.

[0068] According to the second embodiment, the sensor device 1 includes a plurality of sensor group contacts 26, 28. The sensor group contacts 26, 28 have the function of making electrical contact with the transmission device 5.

[0069] The sensor group contacts 26 and 28 are made from conductive materials such as Ag, Au, and Pt.

[0070] The sensor group contacts 26 and 28 include a first sensor group contact 26 and a second sensor group contact 28. The first sensor group contact 26 is positioned on the first sensor group conductor 25 and establishes electrical contact with it. The second sensor group contact 28 is positioned on the second sensor group conductor 27 and establishes electrical contact with it. Each of the two sensor group contacts 26 and 28 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to make electrical contact such as a thermal ultrasonic ball-wedge joint or ultrasonic wedge-wedge joint.

[0071] Compensator 1K group According to the second embodiment, the sensor device 1 comprises a substrate 10 having a plurality of regions having a compensator material 30.

[0072] Preferably, the multiple regions having the compensator material 30 are arranged on the front side of the substrate 10. Both the compensator material 30 and the sensor material 20 are preferably made from the same material having a pyroelectric effect, such as CGS, LGS, tourmaline, AlN, or PZT.

[0073] The regions containing the compensator material 30 are spaced apart from each other and are therefore electrically insulated from each other by the electrically insulating material of the substrate 10. Preferably, the regions having the compensator material 30 are located outside the plurality of substrate diaphragms 11. Therefore, the regions having the compensator material 30 are also electrically insulated from the sensor material 20 located on the plurality of substrate diaphragms 11 by the electrically insulating material of the substrate 1.

[0074] Since multiple regions having the compensator material 30 are arranged outside the multiple base diaphragms 11, the measured pressure P does not act on the multiple regions having the compensator material 30 because the base 10 does not experience any deflection due to the action of the pressure P, and therefore the multiple regions having the compensator material 30 do not generate piezoelectric charges as measured values.

[0075] A temperature change ΔT acts equally on the sensor material 20 and the compensator material 30 arranged on the multiple substrate diaphragms 11, generating pyroelectric charges P20+ and P20- in the sensor material 20 and P30+ and P30- in the compensator material 30. Preferably, the sensor material 20 and the compensator material 30 have the same structure, and as a result, the amount of pyroelectric charges P20+ and P20- generated in the sensor material 20 is equal to the amount of pyroelectric charges P30+ and P30- generated in the compensator material 30.

[0076] In each of the multiple substrate diaphragms 11, a first sensor electrode 21 is positioned on the surface of the sensor material 20 facing away from the substrate diaphragm 11 and taps a first pyroelectric charge P20+. The second sensor electrode 23 is positioned on the surface of the sensor material 20 facing the substrate diaphragm 11 and taps a second pyroelectric charge P20-. In each of the multiple regions having the compensator material 30, a first compensator electrode 31 is positioned on the surface of the compensator material 30 facing away from the substrate 10 and taps a first pyroelectric charge P30+. The second compensator electrode 33 is positioned on the surface of the compensator material 30 facing the substrate 10 and taps a second pyroelectric charge P30-.

[0077] According to the second embodiment, the sensor device 1 comprises a plurality of compensator group conductors 35 and 37. The compensator group conductors 35 and 37 have the function of collecting pyroelectric charges P30+ and P30-.

[0078] The compensator group conductors 35 and 37 are made of conductive materials such as Ag, Au, and Pt.

[0079] The compensator group conductors 35 and 37 are arranged in two surface regions of the compensator material 30. The compensator group conductors 35 and 37 include a first compensator group conductor 35 and a second compensator group conductor 37. The first compensator group conductor 35 establishes electrical contact with the first compensator electrode 31 and connects them electrically in series. The second compensator group conductor 37 establishes electrical contact with the second compensator electrode 33 and connects them electrically in series.

[0080] The regions of the substrate 10 on which the compensator material 30 is arranged, the regions on which the compensator material 30 is arranged, and the compensator electrodes 31, 33 and compensator group conductors 35, 37 arranged on the surfaces of these regions on which the compensator material 30 are arranged form a compensator group 1K.

[0081] According to the second embodiment, the sensor device 1 includes a plurality of compensator group contacts 36, 38. The compensator group contacts 36, 38 have the function of providing electrical contact with the transmission device 5.

[0082] The compensator group contacts 36 and 38 are made of conductive materials such as Ag, Au, and Pt.

[0083] The compensator group contacts 36 and 38 include a first compensator group contact 36 and a second compensator group contact 38. The first compensator group contact 36 is positioned on the first compensator group conductor 35 and establishes electrical contact with it. The second compensator group contact 38 is positioned on the second compensator group conductor 37 and establishes electrical contact with it. Each of the two compensator group contacts 36 and 38 has a planar extension parallel to the horizontal plane XY, and the planar extension is designed to be large enough to form electrical contacts such as thermal ultrasonic ball-wedge joints and ultrasonic wedge-wedge joints.

[0084] Transmission device 5 The transmission device 5 has the function of transmitting piezoelectric charges Q20+, Q20- and pyroelectric charges P20+, P20-, P30+, P30-.

[0085] The transmission device 5 comprises a plurality of charge carriers 51, 52 made from conductive materials such as copper (Cu), Ag, and Au. The charge carriers 51, 52 are typically wires with a diameter of 15 to 200 μm.

[0086] The charge carriers 51 and 52 include a first charge carrier 51 and a second charge carrier 52.

[0087] According to the schematic circuit diagram in Figure 5, the first charge carrier 51 establishes electrical contact with the first sensor electrode 21 via the first sensor contact 22 and with the second compensator electrode 33 via the second compensator contact 34. Thus, the first piezoelectric charge Q20+ and the first pyroelectric charge P20+ of the sensor material 20, and the second pyroelectric charge P30- of the compensator material 30 are present in the first charge carrier 51. Advantageously, the amount of the first pyroelectric charge P20+ of the sensor material 20 is equal to the amount of the second pyroelectric charge P30- of the compensator material 30, and as a result, the pyroelectric charges P20+ and P30- in the first charge carrier 51 cancel each other out.

[0088] According to the schematic circuit diagram in Figure 5, the second charge carrier 52 establishes electrical contact with the second sensor electrode 23 via the second sensor contact 24 and with the first compensator electrode 31 via the first compensator contact 32. Thus, the second piezoelectric charge Q20- and the second pyroelectric charge P20- of the sensor material 20, and the first pyroelectric charge P30+ of the compensator material 30 are present in the second charge carrier 52. Advantageously, the amount of the second pyroelectric charge P20- of the sensor material 20 is equal to the amount of the first pyroelectric charge P30+ of the compensator material 30, and as a result, the pyroelectric charges P20- and P30+ in the second charge carrier 52 cancel each other out.

[0089] Piezoelectric charges Q20+ and Q20- are transmitted from sensor contacts 22 and 24 via the charge transmission bodies 51 and 52.

[0090] According to the schematic circuit diagram in Figure 6, the first charge transmission body 51 establishes electrical contact with the first sensor group contact 26 and the second compensator group contact 38. Thus, the first piezoelectric charge Q20+ and the first pyroelectric charge P20+ of the sensor material 20, and the second pyroelectric charge P30- of the compensator material 30 are present on the first charge transmission body 51. Advantageously, the amount of the first pyroelectric charge P20+ of the sensor material 20 is equal to the amount of the second pyroelectric charge P30- of the compensator material 30, and as a result, the pyroelectric charges P20+ and P30- on the first charge transmission body 51 cancel each other out.

[0091] According to the schematic circuit diagram in Figure 6, the second charge carrier 52 establishes electrical contact with the second sensor group contact 28 and the second compensator group contact 36. Thus, the second piezoelectric charge Q20- and the second pyroelectric charge P20- of the sensor material 20, and the first pyroelectric charge P30+ of the compensator material 30 are present on the second charge carrier 52. Advantageously, the amount of the second pyroelectric charge P20- of the sensor material 20 is equal to the amount of the first pyroelectric charge P30+ of the compensator material 30, and as a result, the pyroelectric charges P20- and P30+ on the second charge carrier 52 cancel each other out.

[0092] Clearly, at measurement frequencies f* exceeding 100 kHz, the wave impedance Z5 of the transmission device 5 must be considered. This is because the piezoelectric charges Q20+ and Q20- of the charge carriers 51 and 52 generate a magnetic field and, consequently, inductance. Furthermore, the charge carriers 51 and 52 form capacitance relative to each other. The wave impedance Z5 depends on both the inductance and capacitance of the transmission device 5. The wave impedance Z5 produces electromagnetic waves, which are reflected at both ends of the transmission device 5. Reflection of electromagnetic waves can distort the measurement of pressure P. To avoid such reflections, at least one end of the transmission device 5 is electrically terminated with an electrical resistor. The electrical resistor absorbs incoming electromagnetic waves. The electrical resistance corresponds to the wave impedance Z5 of the transmission device 5. Depending on industry standards, the wave impedance Z5 is 50Ω or 75Ω in a coaxial transmission line, and in the range of 100Ω to 300Ω in a two-wire transmission line.

[0093] Converter unit 6 The converter unit 6 has the function of electrically converting the transmitted piezoelectric charges Q20+ and Q20- into at least one measurement signal PS and MS.

[0094] The measurement signals PS and MS include the pressure signal PS and the ground potential signal MS. The pressure signal PS corresponds to the first piezoelectric charge Q20+. The ground potential signal MS corresponds to the second piezoelectric charge Q20-.

[0095] According to the schematic circuit diagrams in Figures 5 and 6, the converter unit 6 comprises at least one operational amplifier 61, at least one feedback capacitor 62, at least one first charge input contact 63, at least one second charge input contact 65, at least one signal output contact 66, and at least one ground potential output contact 67.

[0096] The operational amplifier 61 includes an inverting input i-, a non-inverting input i+, and a signal output o. The inverting input i- is 10 -14It exhibits high electrical insulation with low leakage currents of less than A (amperes). The inverting input i- of the converter unit 6 has an input impedance Z61 close to 0Ω. The non-inverting input i+ is connected to the ground potential 64 of the sensor device 1. The ground potential 64 is a reference potential such as 0V. The ground potential 64 can be the potential of the conductive ground at the location of the sensor device 1.

[0097] The charge input contacts 63 and 65 have the function of providing electrical contact between the converter unit 6 and the transmission device 5. The charge input contacts 63 and 65 are made of a conductive material such as Cu, Ag, or Au.

[0098] The first charge transmitter 51 forms one end of the transmission device 5 for the inverting input i- of the operational amplifier 61. The first charge transmitter 51 is electrically in contact with the inverting input i- of the operational amplifier 61 via the first charge input contact 63. Therefore, the second piezoelectric charge Q20+ of the pressure sensor 1P and the group of pressure sensors 1P is present at the inverting input i- of the operational amplifier 61. The second piezoelectric charge Q20+ generates a current at the inverting input i-.

[0099] The second charge transmission body 52 is electrically connected to the ground potential 64 via the second charge input contact 65. Therefore, the first piezoelectric charge Q20- of the pressure sensor 1P and the group of pressure sensors 1P is at the ground potential 64.

[0100] The function of the operational amplifier 61 is to amplify the piezoelectric charge Q20+ at the inverting input i-.

[0101] The operational amplifier 61 attempts to adjust the voltage difference between the inverting input i- and the non-inverting input i+ to zero. To achieve this, the amplified piezoelectric charge Q20+ flows as a current from the inverting input i- to the operational amplifier 61, generating an output voltage at the signal output o.

[0102] The operational amplifier 61 exhibits an operating frequency f61. The operating frequency f61 is the highest frequency at which the operational amplifier 61 can amplify the piezoelectric charge Q20+. Preferably, the operating frequency f61 is 50 MHz or higher, and more preferably 500 MHz or higher.

[0103] The feedback capacitor 62 is connected in parallel to the inverting input i- and signal output o of the operational amplifier 61.

[0104] The function of the feedback capacitor 62 is to set the amplification factor of the converter unit 6. The feedback capacitor 62 is connected between the inverting input i- and the signal output o of the operational amplifier 61. The output voltage present at the signal output o flows back as current to the inverting input i- through the feedback capacitor 62. The amount of current that flows back depends on the capacitance C62 of the feedback capacitor 62. The larger the capacitance C62 of the feedback capacitor 62, the larger the current that flows back to the inverting input i-, and this current then flows to the operational amplifier 61 in addition to the piezoelectric charge Q20+ that is amplified. Preferably, the capacitance C62 of the feedback capacitor 62 is in the range of 10pF to 1000pF.

[0105] The input impedance Z61 at the inverting input i- is inversely proportional to the product of the operating frequency f61 of the operational amplifier 61 and the value C62 of the feedback capacitor 62.

number

[0106] To prevent reflection of electromagnetic waves in the transmission device 5 and at the inverting input i-, the wave impedance Z5 of the transmission device 5 is balanced with the input impedance Z61 at the inverting input i-. For this purpose, the balanced impedance Z6 is electrically connected between one end of the transmission device 5 to the inverting input i- and the inverting input i-. The following applies to balancing the impedance Z5 of the transmission device 5. Z5 = Z61 + Z6

[0107] The balanced impedance Z6 is approximately the same magnitude as the wave impedance Z5 of the transmission device 5. Preferably, the balanced impedance Z6 is less than or equal to the wave impedance Z5 of the transmission device 5. For the wave impedance Z5 of the transmission device 5 in an embodiment of a 50Ω or 75Ω coaxial line, the balanced impedance Z6 is less than or equal to this wave impedance Z5 of the 50Ω or 75Ω coaxial line. For the wave impedance Z5 of the transmission device 5 in the form of a two-wire line in the range of 100Ω to 300Ω, the balanced impedance Z6 is less than or equal to the wave impedance Z5 of this two-wire line in the range of 100Ω to 300Ω. Preferably, the balanced impedance Z6 is 300Ω or less, preferably 75Ω or less, and preferably 50Ω or less.

[0108] To give a numerical example, the input impedance Z61 at the inverting input i- is 3.2Ω, and the input impedance Z61 at the inverting input i- is 3.2Ω, applied to the 2π proportionality constant between the product of the operating frequency f61 of the operational amplifier 61 and the value C62 of the feedback capacitor 62, as well as the operating frequency f61 of the operational amplifier 61 at 500MHz and the value C62 of the feedback capacitor 62 at 100pF. In the embodiment of a 50Ω coaxial line, the balanced impedance Z6 is 46.8Ω in that case in order to balance with the wave impedance Z5 of the transmission device 5.

[0109] The pressure signal PS is the output voltage present at the signal output o of the operational amplifier 61. The pressure signal PS corresponds to the amount of the first piezoelectric charge Q20+. Each first piezoelectric charge Q20+ is amplified into the pressure signal PS by the converter unit 6.

[0110] The signal output contact 66 and the ground potential output contact 67 have the function of providing electrical contact between the converter unit 6 and the evaluation unit 7. The signal output contact 66 and the ground potential output contact 67 are made from conductive materials such as Cu, Ag, and Au.

[0111] The signal output o of the operational amplifier 61 is electrically connected to the signal output contact 66. The pressure signal PS is applied to the signal output contact 66. The ground potential output contact 67 is electrically connected to the ground potential 64. The ground potential signal MS is applied to the ground potential output contact 67.

[0112] Evaluation Unit 7 The evaluation unit 7 has the function of evaluating the sensor signals PS and MS.

[0113] To this end, the evaluation unit 7 comprises at least one signal conductor 71, at least one ground potential conductor 72, at least one interface 73, at least one arithmetic unit 74, at least one input unit 75, and at least one output unit 76.

[0114] The signal conductor 71 and the ground potential conductor 72 are made from conductive materials such as Cu, Ag, and Au.

[0115] An electrical contact is established with the signal conductor 71 at the first signal output contact 66, and an electrical contact is established with the ground potential conductor 72 at the first ground potential output contact 72. The pressure signal PS is transmitted to the interface 73 via the signal conductor 71. The ground potential signal MS is supplied to the interface 73 via the ground potential conductor 72.

[0116] Interface 73 has the function of digitizing the measurement signals PS and MS into measurement data elements PD and MD.

[0117] For this purpose, the interface 73 comprises at least one converter element, such as an analog-to-digital converter. The converter element is configured to digitize the measurement signals PS and MS into measurement data elements PD and MD. Each measurement data element PD and MD specifies the measurement data quantity pv and mv for the measurement. Each measurement data element PD and MD is a binary number with a resolution such as 12 bits and 16 bits.

[0118] Interface 73 also includes at least one timer, such as a clock. The timer is configured to provide time points pt and mt to each measurement data element PD and MD. Each time point pt and mt is a binary number with a resolution such as 12 bits and 16 bits. The time point pt and mt to which the measurement data elements PD and MD are provided will hereafter also be called the time point pt and mt associated with the measurement data elements PD and MD. At time point pt and mt, Interface 73 digitizes the sensor signals PS and MS into measurement data elements PD and MD. According to the Nyquist-Shannon sampling theorem, time point pt and mt have a time resolution equal to the reciprocal of twice the measurement frequency f*. For measurement frequencies f* at up to 1 / 3 of the natural frequency f1 of 1 MHz or more, time point pt and mt have a time resolution equal to 3 / 2 10 -6 It has a time resolution of more than a second.

[0119] The measurement data elements PD and MD include at least one pressure data element PD having a pressure quantity pv, and the time points pt and mt include at least one time point pt associated with the pressure data element PD. The interface 73 digitizes each pressure signal PS into a pressure data element PD having a pressure quantity pv and provides the associated pressure time point pt to the pressure data element PD.

[0120] The schematic diagrams in Figures 4 and 5 show that the measurement data elements PD and MD also include at least one ground potential data element MD having a ground potential value mv, and the time points pt and mt include at least one ground potential time point mt associated with the ground potential data element MD.

[0121] The arithmetic unit 74 includes at least one data storage device and at least one data processor.

[0122] The arithmetic unit 74 includes at least one evaluation program AP, which is stored in data memory and can be loaded into the data processor. The evaluation program AP loaded into the data processor is designed to evaluate the measurement data elements PD and MD using the measurement data values ​​pv and mv and the time points pt and mt.

[0123] The arithmetic unit 74 can be operated via the input unit 75. The verb "operate" means that a human can input a command via the input unit 75, and that command is executed by the arithmetic unit 75. The input unit 75 can be a keyboard or a touch-sensitive screen for inputting commands. Commands can be input as strings via the input unit 75, and an evaluation program AP loaded into the data processor is designed to generate control data for the input command. Thus, the input command may be to switch the sensor device 1 on or off, and the evaluation program AP loaded into the data processor is designed to generate control data for the command, which switches the sensor device 1 on or off.

[0124] Furthermore, the evaluation program AP loaded into the data processor is designed to graphically display the measurement data elements PD, MD, and the date element t for evaluation. The output unit 76 can be a screen, on which the measurement data elements PD and MD are graphically displayed for human use.

[0125] With knowledge of the present invention, those skilled in the art can realize a wide variety of modifications to the shown embodiments. Therefore, the pressure sensor 1P, the transmission device 5, and the converter unit 6 can be realized within the housing at the location where the pressure P is measured. [Explanation of Symbols]

[0126] 1. Sensor device 1P Pressure Sensor 5. Transmission device 6 Converter Units 7 Evaluation Units 10 Base 11. Base diaphragm D11 Diameter of the base diaphragm F11 Front of the base diaphragm F12 Rear view of the base diaphragm T11 Thickness of the base diaphragm 12 Base opening 13 Support layer 14 Boundary layer 15 Stop layer 20 Sensor Materials D20 Sensor material bottom surface T20 Sensor material thickness 21 First recovery electrode D21 Bottom surface of the first sensor electrode 22 First sensor contact 23 Second sensor electrode D23 Bottom surface of the second sensor electrode 24 Second sensor contact 25 First sensor group conductor 26 First sensor group contact 27 Second sensor group conductor 28 Second sensor group contact 30 Compensator material D30 Compensator material bottom surface T30 Compensator material thickness 31 First compensator electrode 32 First compensator contact 33. Second compensator electrode 34 Second compensator contact 35 First Compensator Group Conductor 36 First compensator group contact 37 Second Compensator Device Group Conductor 38 Second compensator group contact 51 First charge carrier 52 Second charge carrier 61 Operational Amplifier - Inverted input + Non-inverted input o Signal output 62 Feedback Capacitor C62 Feedback capacitor capacitance 63 First charge input contact 64. Ground potential 65 Second charge input contact 66 Signal output contact 67 Ground potential output contact 71 Signal Conductor 72 Ground potential conductor 73 Interface 74 arithmetic units 75 Input Units 76 Output Units AP Evaluation Program BB section path DXY First Horizontal Distance f1 Natural frequency f* measurement frequency f61 Operating frequency MD Ground Potential Data Element MS ground potential signal mt Ground potential point mv ground potential value P pressure P+- pyroelectric charge P20+ First pyroelectric charge P20 - Second pyroelectric charge p30+ First pyroelectric charge P30 - Second pyroelectric charge PD pressure data elements PS pressure signal pt pressure point pv pressure value Q20+ First piezoelectric charge Q20 - Second piezoelectric charge σ Sensitivity T temperature X horizontal axis XY horizontal plane Y horizontal axis Z vertical axis Z5 Wave Impedance Z6 Balanced Impedance Z61 Input Impedance

Claims

1. A sensor device (1) designed to measure pressure (P), comprising at least one substrate (10) and at least one sensor material (20), wherein the substrate (10) is formed in several areas as a substrate diaphragm (11), the substrate diaphragm (11) is designed to sense the pressure (P) to be measured, and the substrate diaphragm (11) can be deflected under the influence of the pressure (P), wherein the sensor material (20) is arranged in several areas on the substrate diaphragm (11), the sensor material (20) generates piezoelectric charges (Q20+, Q20-) under the influence of the deflection of the substrate diaphragm (11), and the generated piezoelectric charges A sensor device (1) characterized in that the amount of (Q20+, Q20-) is proportional to the magnitude of the pressure (P) to be measured, the sensor device (1) comprises at least one compensator material (30) and the compensator material (30) is arranged in several areas on the substrate (10), the sensor material (20) generates pyroelectric charges (P20+, P20-) under the influence of a temperature change (ΔT), the compensator material (30) generates pyroelectric charges (P30+, P30-) under the influence of a temperature change (ΔT), and the pyroelectric charges (P30+, P30-) generated by the compensator material (30) cancel out the pyroelectric charges (P20+, P20-) generated by the sensor material (20).

2. The sensor device (1) according to claim 1, characterized in that the compensator material (30) is arranged on the outside of the base diaphragm (11).

3. The sensor device (1) according to claim 1 or 2, characterized in that the base diaphragm (11) has a thickness (T11) along the vertical axis (Z) and a diameter (D11) in a horizontal plane (XY) perpendicular to the vertical axis (Z), the thickness (T11) of the base diaphragm (11) is 20 μm or less, preferably 10 μm or less, preferably 5 μm or less, the diameter (D11) of the base diaphragm (11) is 300 μm or less, preferably 200 μm or less, preferably 100 μm or less, and the ratio of the thickness (T11) to the diameter (D11) of the base diaphragm (11) is selected such that the sensor device (1) has a natural frequency (f1) of 1 MHz or higher.

4. The sensor device (1) according to any one of claims 1 to 3, characterized in that the substrate (10) and the substrate diaphragm (11) are made from silicon.

5. The sensor material (20) generates piezoelectric charges (Q20+, Q20-) and pyroelectric charges (P20+, P20-) on a plurality of surfaces; the sensor device (1) comprises a plurality of sensor electrodes (21, 23), the sensor electrodes (21, 23) are arranged on the surface of the sensor material (20) and tap the piezoelectric charges (Q20+, Q20-) and pyroelectric charges (P20+, P20-); the substrate diaphragm (11), the sensor material (20) arranged on the substrate diaphragm (11), and the sensor electrodes (21, 23) arranged on the surface of the sensor material (20) form a pressure sensor (1P); The sensor device (1) according to any one of claims 1 to 4, characterized in that the compensator material (30) generates the pyroelectric charges (P20+, P20-) on a plurality of surfaces, the sensor device (1) comprises a plurality of compensator electrodes (31, 33), the compensator electrodes (31, 33) are arranged on the surface of the compensator material (30) and tap the pyroelectric charges (K30+, K30-), and the region of the substrate (10) on which the compensator material (30) is located, the compensator material (30) arranged on the substrate (10), and the compensator electrodes (31, 33) arranged on the surface of the compensator material (30) form a compensator (1K).

6. Multiple base diaphragms (11) are formed in several areas of the base (10), each of the multiple base diaphragms (11) is designed to sense the pressure (P) to be measured, each of the multiple base diaphragms (11) can be deflected under the influence of the pressure (P), and a sensor material (20) is placed on each of the multiple base diaphragms (11) on the base diaphragms (11), and the sensor material (20) is pressure under the influence of the deflection of the base diaphragms (11). A sensor device (1) according to any one of claims 1 to 5, characterized in that it generates electric charges (Q20+, Q20-), a plurality of regions having a compensator material (30) are arranged on the substrate (10), and a temperature change (ΔT) acts equally on the sensor material (20) and the compensator material (30), and under the influence of the temperature change (ΔT), the sensor material (20) generates pyroelectric charges (P20+, P20-) and the compensator material (30) generates pyroelectric charges (P30+, P30-).

7. In each of the plurality of substrate diaphragms (11), sensor electrodes (21, 23) are arranged on the surface of the sensor material (20), and the sensor electrodes (21, 23) tap the piezoelectric charge (Q20+, Q20-) and the pyroelectric charge (P20+, P20-) of the sensor material (20), and the sensor device (1) includes sensor group conductors (25, 27), and the sensor electrodes (21, 23) are electrically connected in series via the sensor group conductors (25, 27). The sensor device (1) according to claim 6, characterized in that, in each of the plurality of regions having the compensator material (30), compensator electrodes (31, 33) are arranged on the surface of the compensator material (30) to tap the pyroelectric charge (P30+, P30-) of the compensator material (30), and the sensor device (1) comprises a plurality of compensator group conductors (35, 37), and the compensator electrodes (31, 33) are electrically connected in series via the compensator group conductors (25, 27).

8. The piezoelectric charge (Q20+, Q20-) of the sensor material (20) includes a first piezoelectric charge (Q20+) and a second piezoelectric charge (Q20-), the pyroelectric charge (P20+, P20-) of the sensor material (20) includes a first pyroelectric charge (P20+) and a second pyroelectric charge (P20-), the sensor electrodes (21, 23) include a first sensor electrode (21) and a second sensor electrode (23), the first sensor electrode (21) taps the first piezoelectric charge (Q20+) and the first pyroelectric charge (P20+) of the sensor material (20), and the second sensor electrode (23) taps the second piezoelectric charge of the sensor material (20) The sensor device (1) according to claim 5 or 7, characterized in that it taps (Q20-) and the second pyroelectric charge (P20-), the pyroelectric charges (P30+, P30-) of the compensator material (30) include a first pyroelectric charge (P30+) and a second pyroelectric charge (P30-), the compensator electrodes (31, 33) include a first compensator electrode (31) and a second compensator electrode (33), the first compensator electrode (31) taps the first pyroelectric charge (P30+) of the compensator material (30), and the second compensator electrode (33) taps the second pyroelectric charge (P30-) of the compensator material (30).

9. The sensor device (1) comprises at least one transmission device (5), the transmission device (5) comprises a first charge transmission body (51) and a second charge transmission body (52), the first charge transmission body (51) is electrically connected to the first sensor electrode (21) and the second compensator electrode (33), the first piezoelectric charge (Q20+) and the first pyroelectric charge (P20+) of the sensor material (20), and the second pyroelectric charge (P30-) of the compensator material (30) are present on the first charge transmission body (51), the amount of the first pyroelectric charge (P20+) of the sensor material (20) is equal to the amount of the second pyroelectric charge (P30-) of the compensator material (30), and the pyroelectric charges (P20+, P30-) are The sensor device (1) according to claim 8, characterized in that the charges are canceled out by the first charge carrier 51, the second charge carrier (52) establishes electrical contact with the second sensor electrode (23) and the first compensator electrode (31), the second piezoelectric charge (Q20-) and the second pyroelectric charge (P20-) of the sensor material (20) and the first pyroelectric charge (P30+) of the compensator material (30) are applied to the second charge carrier (52), and the amount of the second pyroelectric charge (P20-) of the sensor material (20) is equal to the amount of the first pyroelectric charge (P30+) of the compensator material (30), and the pyroelectric charges (P20-, P30+) are canceled out by the second charge carrier 51.

10. The sensor device (1) according to claim 9, characterized in that the charge transmission bodies (51, 52) transmit the piezoelectric charge (Q20+, Q20-), and at least one end of the transmission body (5) is electrically terminated with wave impedance (Z5).

11. The sensor device (1) according to claim 10, wherein the sensor device (1) comprises at least one converter unit (6), the converter unit (6) comprises an operational amplifier (61) and a feedback capacitor (62), the operational amplifier (61) includes an inverting input (i-), a non-inverting input (i+), and a signal output (o), the feedback capacitor (62) is connected between the inverting input (i-) and the signal output (o), the transmission device (5) transmits the piezoelectric charge (Q20+, Q20-) to the converter unit (6), the piezoelectric charge (Q20+, Q20-) includes a first piezoelectric charge (Q20+), the first piezoelectric charge (Q20+) is applied to the inverting input (i-) of the operational amplifier (61), and the converter unit (6) amplifies the first piezoelectric charge (Q20+) into a pressure signal (PS) applied to the signal output (o).

12. The operational amplifier (61) indicates an operating frequency (f61), and at the operating frequency (f61), the operational amplifier (61) amplifies the first piezoelectric charge (Q20+) into a pressure signal (PS); the feedback capacitor (62) indicates a capacitance (C62), the capacitance (C62) determines the amount of current that flows in reverse through the feedback capacitor (62) to the inverting input (i-), and the current that flows in reverse amplifies the first piezoelectric charge (Q20+); and the input impedance (Z61) of the operational amplifier (61) at the inverting input (i-) is inversely proportional to the product of the operating frequency (f61) of the operational amplifier (61) and the capacitance (C62) of the feedback capacitor (62). [Math 1] The sensor device (1) according to claim 11, characterized in that

13. The sensor device (1) according to claim 12, characterized in that the input impedance (Z61) at the inverting input (i-) of the operational amplifier (61) is balanced with the wave impedance (Z5) of the transmission device (5) via a balanced impedance (Z6), and the balanced impedance (Z6) is electrically connected between one end of the transmission device (5) to the inverting input (i-) of the operational amplifier (61) and the inverting input (i-) of the operational amplifier (61).

14. The sensor device (1) according to claim 13, characterized in that the balanced impedance (Z6) is of the same magnitude as the wave impedance (Z5) of the transmission device (5).

15. The sensor device (1) according to claim 14, characterized in that, with respect to the wave impedance (Z5) of the transmission device (5) in an embodiment of a 50Ω or 75Ω coaxial line, the balanced impedance (Z6) is less than or equal to the wave impedance (Z5) of the 50Ω or 75Ω coaxial line, or, with respect to the wave impedance (Z5) of the transmission device (5) in an embodiment of a two-wire line in the range of 100Ω to 300Ω, the balanced impedance (Z6) is less than or equal to the wave impedance (Z5) of the two-wire line in the range of 100Ω to 300Ω.

16. The sensor device (1) according to any one of claims 12 to 15, characterized in that the operating frequency (f61) of the operational amplifier (61) is 1 / 3 or more of the natural frequency (f1) of the sensor device (1) of 1 MHz or more.

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