Injector device, semiconductor processing system including injector device, and method for depositing a material layer on a workpiece using the semiconductor processing system and injector device.

Abstract

The present invention provides an injector device, a semiconductor processing system including the injector device, and a method for depositing a material layer. [Solution] The injector device includes an injector holder, a reactor flange, a connecting member, a connector body, and at least one protrusion. The injector holder includes an injector collar having a first injector collar end, a second injector collar end, and an injector rim connected to the first injector collar end. The injector rim defines the injection opening. The reactor flange includes a tubular member having a first tubular member end, a second tubular member end, and a reactor rim connected to the first tubular member end. The reactor rim defines the reactor opening. The connecting member fluidly connects the reactor flange to the injector holder and defines the precursor opening. The connector body mechanically connects the injector holder to the reactor flange. The protrusion may include an injector protrusion and a reactor protrusion.

Description

Technical Field

[0001] The present disclosure generally relates to gaskets, and more specifically, to gaskets used for depositing material layers onto workpieces.

Background Art

[0002] Gaskets are commonly used to fill the space between two or more surfaces and are generally intended to prevent leakage when compressed. Gaskets may be made from rubber, metal, or polymer materials and can have various sizes and shapes. In semiconductor device manufacturing, gaskets can generally be used to prevent leakage from a container holding a chemical substance to a tool into which the chemical substance is introduced. In semiconductor device manufacturing, the gasket may generally be in the shape of an O-ring and can be manufactured from materials suitable for various chemicals, temperatures, and pressures. O-rings are commonly used to seal connections between two surfaces, such as between a chemical container and a supply conduit, for introducing chemicals into semiconductor device manufacturing tools.

Summary of the Invention

Problems to be Solved by the Invention

[0003] Such methods and systems have generally been considered suitable for their intended purposes. However, in the art, there still exist needs for improved gasket material selection, semiconductor processing systems including gasket material selection, and material deposition methods. The present disclosure provides a solution to this need.

Means for Solving the Problems

[0004] An injector device is provided. The injector device includes an injector holder, an injector, a reactor flange, a connecting member, a connector body, and at least one of an injector projection and a reactor projection. The injector holder includes an injector collar including a first injector collar end and a second injector collar end, and an injector rim connected to the first injector collar end. The injector rim further defines the injection opening. The injector is slidably received in the second injector collar end. The reactor flange includes a tubular member including a first tubular member end and a second tubular member end, and a reactor rim connected to the first tubular member end. The reactor rim further defines the reactor opening. The connecting member fluidly connects the reactor flange to the injector holder and defines the precursor opening. The connector body is configured to mechanically connect the injector holder to the reactor flange. The injector device includes at least one of an injector projection and a reactor projection. The injector projection extends from the injector rim and surrounds the injection opening. The reactor projection extends from the reactor rim and surrounds the reactor opening.

[0005] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector apparatus may include an injector projection and a reactor projection.

[0006] In addition to or alternative to one or more of the features described above, further embodiments of the injector apparatus may include an injector rim that further defines a plurality of axial openings radially outward of the injector projection. The reactor rim may define a plurality of axial recesses radially outward of the reactor projection. The connector body may be mounted within the injector rim, slidably received by the plurality of axial openings, and connected to the plurality of axial recesses.

[0007] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector apparatus may include an injector rim that further defines a plurality of longitudinal recesses radially outward of the injector projection. The reactor rim may define a plurality of longitudinal openings radially outward of the reactor projection. The connector body may be mounted within the reactor rim, slidably received by the plurality of longitudinal openings, and connected to the plurality of longitudinal recesses.

[0008] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector apparatus may include the injector holder comprising or formed from a heat-resistant material, and the reactor flange comprising or formed from a heat-resistant material.

[0009] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector device may include the connecting member comprising or formed from a malleable material.

[0010] In addition to or alternative to one or more of the features described above, further embodiments of the injector device may include the connector body being one of a plurality of connector bodies and comprising or being formed from a heat-resistant material.

[0011] An injector holder is provided. The injector holder includes an injector collar, an injector rim, and an injector projection. The injector collar further includes a first injector collar end and a second injector collar end. The injector rim is connected to the first injector collar end and defines an injection opening. The injector projection extends from the injector rim and is located around the injection opening.

[0012] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector holder may include an injector slidably received by a second injector collar end of the injector holder.

[0013] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector device may include an injector rim that defines a plurality of longitudinal openings radially outward from the injector projection.

[0014] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector holder may include an injector rim that defines a plurality of longitudinal recesses radially outward of the injector projection.

[0015] In addition to or as an alternative to one or more of the features described above, further embodiments of the injector holder may include the injector holder comprising or formed from a heat-resistant material.

[0016] A reactor flange is provided. The reactor flange includes a tubular member, a reactor rim, and a reactor projection. The tubular member further includes a first tubular member end and a second tubular member end. The reactor rim is connected to the first tubular member end of the tubular member and defines the reactor opening. The reactor projection extends from the reactor rim and is located around the reactor opening.

[0017] In addition to or as an alternative to one or more of the features described above, further embodiments of the reactor flange may include a precursor source fluidly connected to the end of a second tubular member of the reactor flange.

[0018] In addition to or as an alternative to one or more of the features described above, further embodiments of the reactor flange may include a reactor rim that further defines a plurality of longitudinal recesses on the radially outward side of the reactor projection.

[0019] In addition to or as an alternative to one or more of the features described above, further embodiments of the reactor flange may include a reactor rim that further defines a plurality of longitudinal openings radially outward of the reactor projection.

[0020] In addition to or as an alternative to one or more of the features described above, further embodiments of the reactor flange may include or be formed from a reactor flange heat-resistant material.

[0021] A semiconductor processing system is provided. The semiconductor processing system includes an injector device, a precursor source, a chamber body, an exhaust source, a substrate support, a workpiece, and a controller, as described above. The precursor source is fluid-coupled to the end of a second tubular member of the injector device. The chamber body includes a hollow interior. The exhaust source is fluid-coupled to the chamber body and fluid-coupled to the precursor source through the chamber body. The substrate support is located within the hollow interior of the chamber body, and the workpiece is supported on the substrate support. The controller is operably connected to the precursor source and is positioned to communicate with the precursor source, depositing a material layer on the workpiece in response to instructions recorded in memory.

[0022] A method for depositing a material layer is provided. The method, in a semiconductor processing system including an injector device as described above, includes placing a workpiece inside the chamber body, heating the workpiece to a predetermined material layer deposition temperature, exposing the workpiece to a material layer precursor, and depositing a material layer on the workpiece using the material layer precursor.

[0023] In addition to or as an alternative to one or more of the features described above, further embodiments of the material layer deposition method may include arranging a substrate support inside a chamber body, with a workpiece placed on the substrate support, and the workpiece being the substrate.

[0024] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail below in the detailed description of the exemplary embodiments of this disclosure. This summary is not intended to identify any major or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0025] These and other configurations, aspects, and advantages of the invention disclosed in this specification are described below with reference to the drawings of certain embodiments, which are intended to illustrate the invention and not to limit the invention.

Brief Description of the Drawings

[0026] [Figure 1] It is a schematic diagram of a semiconductor processing system according to the present disclosure, showing an injector device positioned within a chamber arrangement for deposition of a material layer onto a substrate. [Figure 2] It is a longitudinal cross-sectional view of a portion of the semiconductor processing system of FIG. 1 according to an embodiment of the present disclosure, showing an injector and an injector device connected to a precursor source. [Figure 3] It is a longitudinal cross-sectional view of the injector device of FIG. 1 according to an embodiment of the present disclosure, showing elements of the injector device. [Figure 4] It is a longitudinal exploded view of the injector device of FIG. 1 according to an embodiment of the present disclosure, showing elements of the injector device. [Figure 5] It is a partial cross-sectional view of the injector device of FIG. 1 according to an embodiment of the present disclosure, showing elements of the injector device. [Figure 6] It is a partial cross-sectional exploded view of the injector device of FIG. 1 according to an embodiment of the present disclosure, showing elements of the injector device. [Figure 7] It is a block diagram of a method for depositing a material layer onto a workpiece according to the present disclosure, showing the operations of the method according to an exemplary and non-limiting embodiment of the method.

Modes for Carrying Out the Invention

[0027] It should be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in the understanding of the illustrated embodiments of the present disclosure.

[0028] Hereafter, similar reference numerals refer to drawings that identify similar structural features or embodiments of the present disclosure. For illustrative and non-limiting purposes, a partial diagram of one embodiment of a chamber arrangement including an injector device according to the present disclosure is shown in Figure 1, generally denoted by reference numeral 100. Other embodiments or aspects thereof of an injector device, a semiconductor processing system, and a chamber arrangement including an injector device, and a method of depositing a material layer on a substrate using the injector device according to the present disclosure are provided in Figures 2–7 and described below. The apparatus, systems and methods of the present disclosure may be used to fluidly couple a material layer precursor source into the hollow interior of a semiconductor processing system used to deposit a material layer on a substrate and / or remove material from a substrate, such as during the manufacture of memory or semiconductor devices using atomic layer deposition and / or chemical vapor deposition techniques, but the present disclosure is not limited to the manufacture of any particular semiconductor device or any particular device manufacturing operation in general.

[0029] While certain specific embodiments and models are disclosed below, it will be understood by those skilled in the art that the scope of the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, as well as their obvious modifications and equivalents. Therefore, the scope of the invention disclosed is not limited by the specific disclosed embodiments described below.

[0030] Referring to Figure 1, a semiconductor processing system 200 including an injector device 100 is shown. The semiconductor processing system 200 includes a precursor source 202, a chamber arrangement 204 including the injector device 100, an exhaust source 206, and a controller 208. The precursor source 202 is fluidly connected to the chamber arrangement 204 by a precursor supply conduit 210 and contains a material layer precursor 10, and is configured to transmit the flow of the material layer precursor 10 to the chamber arrangement 204. The chamber arrangement 204 includes a substrate support 230 (shown in Figure 2) and is connected to the exhaust source 206 by an exhaust conduit 214 and is configured to expose the substrate 2 (shown in Figure 2) placed on the substrate support 230 to the material layer precursor 10 under selected environmental conditions (e.g., pressure and / or temperature) for depositing a material layer 4 onto the substrate 2. The exhaust source 206 communicates with the external environment 12 outside the semiconductor processing system 200 and is configured to transmit the flow of residual precursors and / or reaction products 14 emitted by the chamber configuration 204 using abatement devices such as a vacuum pump and a scrubber during the deposition of the material layer 4 (shown in Figure 2) onto the substrate 2. The controller 208 is operably connected to one or more elements of the semiconductor processing system 200, such as the precursor source 202, to control the flow of material layer precursors 10 through the injector device 100 during the deposition of the material layer 4 onto the substrate 2, and may be connected to it by a wired or wireless link 216.

[0031] In certain embodiments, the precursor source 202 may be configured to transport one or more silicon-containing material layer precursors within the material layer precursor 10 that are transported to the chamber configuration 204. Examples of suitable material layer precursors include non-chlorinated silicon-containing material layer precursors silane (SiH4) or disilane (Si2H6) and / or halogenated material layer precursors, such as chlorinated silicon-containing material layer precursors (e.g., dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si)). Other material layer precursors may include metal precursors, organometallic precursors, and halides. In some embodiments, the material layer precursor may include one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, group 13 elements, group 14 elements, chalcogens, nictogens, halogens, and noble gases.

[0032] According to a particular embodiment, the precursor source 202 may be configured to transfer the dopant-containing material layer precursor and / or alloy component in the material layer precursor 10 to the chamber arrangement 204. Examples of suitable dopant-containing material layer precursors include n-type dopant-containing material layer precursors such as compounds containing phosphorus (P) or arsenic (As), and p-type dopant-containing material layer precursors such as compounds containing boron (B). Examples of suitable alloy components include germanium-containing compounds such as germanium (GeH4) as non-limiting examples.

[0033] The precursor source 202 is intended to be configured to deliver an etchant to the chamber configuration 204, which can either flow together with the material layer precursor 10 or be provided as a separate flow to the chamber configuration 204. Examples of suitable etchants include halogen-containing compounds such as hydrochloric acid (HCl) and chlorine (Cl2) gas, as well as fluorine-containing compounds such as hydrofluoric acid (HF). The precursor source 202 is also intended to be configured to deliver a diluent or carrier fluid (e.g., a gas) to the chamber configuration 204. For example, the precursor source 202 may be configured to deliver one or more of the following: hydrogen (H2) gas, nitrogen (N2) gas, a noble gas, or a mixture containing one or more of the aforementioned gases. The carrier or diluent fluid may be delivered to the chamber configuration 204 together with the material layer precursor 10 or separately, such as in a purge fluid flow.

[0034] Where used in this disclosure, the term “substrate” may refer to one or more arbitrary substrate materials, such as one or more arbitrary substrate materials, which may be modified or on which devices, circuits, or films may be formed. “Substrate” may be continuous or discontinuous, rigid or flexible, solid or porous, or a combination thereof. The substrate may be in any form, such as powder, plate, or workpiece. The substrate may be made from semiconductor materials, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). For example, a substrate in powder form may have applications in pharmaceutical manufacturing. Porous substrates may include polymers. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, cutlery, fasteners (e.g., screws, nails, or bolts), components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells. Continuous substrates may extend beyond the boundaries of the process chamber where the deposition process takes place. In some processes, the continuous substrate may move through the process chamber, thereby allowing the process to continue until it reaches the end of the substrate. Continuous substrates may be supplied from a continuous substrate supply system to enable the manufacture and production of continuous substrates in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, and bundles of continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets on which discontinuous substrates are placed.

[0035] Referring to Figure 2, a semiconductor processing system 200 including an injector device 100 according to one embodiment of the present disclosure is shown. In the illustrated embodiment, the chamber arrangement 204 has a plurality of substrate architectures 218 and includes a chamber body 220, an array of heating elements 222, and one or more temperature sensors 224. One or more temperature sensors 224 may be positioned within the chamber body 220 to monitor the temperature of the chamber body 220 and / or the plurality of substrates 2 of the plurality of substrate architectures 218 and communicate with a controller 208. In certain embodiments, one or more temperature sensors 224 may be thermocouples, pyrometers, or a combination thereof. The array of heating elements 222 may surround the chamber body 220 and may be used to heat the plurality of substrates 2 to a predetermined temperature for the deposition of a material layer 4. The array of heating elements 222 may communicate with one or more temperature sensors 224 by the controller 208, and the controller 208 may adjust the power (not shown) supplied to the array of heating elements 222 based on signals transmitted from one or more temperature sensors 224. In certain embodiments, the heating element array 222 may include a plurality of filament-type heater elements, such as linear lamps. According to certain embodiments, the heating element array 222 may include a plurality of bulb-type heater elements. According to certain embodiments, the heating element array 222 may include a combination of both filament-type and bulb-type heater elements, within the scope of this disclosure.

[0036] The chamber body 220 has a hollow interior 226 and may generally be bell jar shaped. The chamber body 220 has a supply opening 236 and an exhaust opening 238. The supply opening 236 fluidly connects the chamber body 220 to a precursor supply conduit 210, while the exhaust opening 238 fluidly connects the chamber body 220 to an exhaust conduit 214. In this regard, the precursor source 202 is fluidly connected to the exhaust source 206 by the chamber body 220. The chamber body 220 is intended to be formed from a ceramic material 228. In certain embodiments, the ceramic material 228 may be a transparent material, such as quartz or sapphire, which is transparent to electromagnetic radiation in the infrared wavelength band.

[0037] The hollow interior 226 of the chamber body 220 may further include an injector device 100, a substrate support 230, a pedestal 232, a movable door 246, and an injector 234. The injector device 100 may be configured to support the injector 234 within the hollow interior 226 of the chamber body 220, and in this respect may include an injector holder 102, a reactor flange 104, a connecting member 106, and a connector body 108. The injector 234 is connected to the injector device 100 at its first end. The injector 234 fluidly communicates a material layer precursor 10 into the hollow interior 226 of the chamber body 220 in order to deposit a material layer 4 onto a plurality of substrates 2 from its second end. In certain embodiments, the injector 234 may be formed from a heat-resistant material 240. The injector 234 is intended to be formed from a ceramic material. In certain embodiments, the injector 234 may be formed from silicon carbide (SiC), silicon (Si), or quartz, as non-limiting examples. A movable door 246 supports the pedestal 232 and the substrate support 230 within the hollow interior 226 of the chamber body 220. The movable door 246 allows the substrate support 230 to be inserted into the hollow interior 226 of the chamber body 220 from the outside of the chamber body 220, or removed from the hollow interior 226 of the chamber body 220 to the outside of the chamber body 220. The substrate support 230 is supported within the hollow interior 226 of the chamber body 220 by the pedestal 232 and may be configured to support a plurality of substrates 2. The substrate support 230 may be configured to support, for example, 100 substrates, 120 substrates, 150 substrates, 170 substrates, or more than 170 substrates. In certain embodiments, the substrate support 230 may be formed from a heat-resistant material 244. The substrate support 230 is intended to be formed from a ceramic material. In certain embodiments, the substrate support 230 may be formed from silicon carbide (SiC), silicon (Si), or quartz, as non-limiting examples.

[0038] The pedestal 232 supports the substrate support 230 within the hollow interior 226 of the chamber body 220. According to certain embodiments, the workpiece may be supported solely by the pedestal 232 within the hollow interior 226 of the chamber body 220, and this remains within the scope of the disclosure. In these embodiments, the workpiece may not be the substrate 2, but may be a component for aerospace, automotive, or other applications that can benefit from the material layer deposited on the workpiece. As will be understood by those skilled in the art, by placing the workpiece directly on the pedestal 232, it becomes possible for larger workpieces to accommodate the material layer deposited on the workpiece. According to certain embodiments, the workpiece may be supported by the pedestal 232 and an alternative support mechanism within the hollow interior 226 of the chamber body 220, and may also be a workpiece for aerospace, automotive, or other applications that can benefit from the material layer deposited on the workpiece. In certain embodiments, the pedestal 232 may be formed from a heat-resistant material 242. The pedestal 232 is intended to be formed from a ceramic material. In certain embodiments, the pedestal 232 may be formed from silicon carbide (SiC), silicon (Si), or quartz, as non-limiting examples.

[0039] The controller 208 may be configured to control one or more elements of the semiconductor processing system 200. The controller 208 may include a processor 248, a device interface 250, a user interface 252, a plurality of program modules 254, and a memory 256. The device interface 250 may connect the controller 208 to the precursor source 202 via a wired or wireless link 216 and / or other elements of the semiconductor processing system 200, and is connected to the processor 248. The processor 248 is connected to the device interface 250 and operably connected to the user interface 252, through which it receives user input and / or provides user output, and is arranged to communicate with the memory 256. The memory 256 includes a non-temporary machine-readable medium having a plurality of program modules 254 recorded thereon, which, when read by the processor 248, contain instructions that cause the processor 248 to perform specific operations. Among these operations is the operation of the material layer deposition method 300 (shown in Figure 7), which is described below. Although described herein as having a specific architecture, the controller 208 may have a different architecture (e.g., a distributed computing architecture) in other embodiments of the Disclosure, and it is understood that this will remain within the scope of the Disclosure. For example, the controller 208 may be configured to control the volume of material layer precursor 10 flowing from the precursor source 202 into the injector device 100. The controller 208 may be configured to adjust the heating element array 222 in response to signals received from one or more temperature sensors 224 communicating with the controller 208. The controller 208 may be configured to open and close a movable door 246 of the chamber body 220. The controller 208 may be configured to remove excess precursor from the hollow interior 226 of the chamber body 220 to the external environment 12 by an exhaust source 206.

[0040] Referring to Figures 3 to 6, an injector device 100 according to one embodiment of the present disclosure is shown. The injector device 100 may be configured to support an injector 234 within a hollow interior 226 of a chamber body 220 (as shown in Figure 2), in which case it may include an injector holder 102, a reactor flange 104, a connecting member 106, and a connector body 108.

[0041] Figure 3 shows a longitudinal cross-sectional view of the injector device 100. The injector holder 102 may include an injector collar 110 having a first injector collar end 112 and a second injector collar end 114, an injector rim 116, and an injector projection 118. The first injector collar end 112 of the injector collar 110 slidably receives the injector 234 (shown in Figure 2). The injector rim 116 is connected to the second injector collar end 114 of the injector collar 110 and defines an injection opening 120. The injector rim 116 further defines a plurality of longitudinal openings 136 radially outward from the injection opening 120. The injector projection 118 extends from the injector rim 116 and surrounds the periphery of the injection opening 120. In the illustrated embodiment, the injector projection 118 is radially inward of the longitudinal opening 136. In certain embodiments, the injector projection 118 may be radially outward of the longitudinal opening 136. In the illustrated embodiment, the injector projection 118 forms a single acute angle. In certain embodiments, the injector projection 118 may form an obtuse angle, a 90-degree angle with respect to the connecting member 106, be rounded, or consist of one or more of the aforementioned geometric shapes, within the scope of this disclosure. As will be understood by those skilled in the art, these geometric shapes provide flexibility based on the environmental conditions selected for depositing the material layer 4 onto the substrate 2. In certain embodiments, the injector holder 102 may be formed from a heat-resistant material. It is intended that the injector holder 102 may be formed from a ceramic material 142. In certain embodiments, the injector holder 102 may be formed from silicon carbide (SiC), silicon (Si), or quartz, as non-limiting examples.

[0042] The reactor flange 104 may include a tubular member 122 having a first tubular member end 124 and a second tubular member end 126, a reactor rim 128, and a reactor projection 130. The reactor rim 128 is connected to the first tubular member end 124 of the tubular member 122 and defines the reactor opening 132. The reactor rim 128 further defines a plurality of longitudinal recesses 138 radially outward from the reactor opening 132. The second tubular member end 126 of the tubular member 122 is connected to a supply conduit 210 (shown in Figure 2). Similar to the injector holder 102, the reactor flange 104 may be formed from a heat-resistant material. In certain embodiments, the reactor flange 104 may be formed from a ceramic material 144. In non-limiting examples, the reactor flange 104 may be formed from silicon carbide (SiC), silicon (Si), or quartz. The reactor projection 130 is similar to the injector projection 118 and extends from the reactor rim 128. The reactor projection 130 surrounds the reactor opening 132 and is radially inward of the multiple longitudinal recesses 138. In certain embodiments, the reactor projection 130 is radially outward of the multiple longitudinal recesses 138.

[0043] As will be understood by those skilled in the art, in some embodiments, one or more of the injector holder 102, reactor flange 104, and injector 234 may be formed from the same material. In some embodiments, two or more of the injector holder 102, reactor flange 104, and injector 234 may be formed from the same material. In some embodiments, all of the injector holder 102, reactor flange 104, and injector 234 may be formed from the same material. In some embodiments, at least one of the injector holder 102, reactor flange 104, and injector 234 contains silicon.

[0044] In the illustrated embodiment, the reactor projection 130 is closer to the connector body 108 than the injector projection 118. As will be understood by those skilled in the art, the reactor projection 130 may be at the same distance from the connector body 108 as the injector projection 118, or it may be further away. Although shown and described herein as having the same geometric shape, both the injector projection 118 and the reactor projection 130 may have different geometric shapes, and it will be understood that this remains within the scope of the disclosure. In certain embodiments, either the injector projection 118 or the reactor projection 130 may be absent, and this remains within the scope of the disclosure. In the illustrated embodiment, the injector projection 118 and the reactor projection 130 are not vertically aligned along the vertical dashed line 140. In certain embodiments, both the injector projection 118 or the reactor projection 130, either one, part of either, or a combination thereof may be aligned along the vertical dashed line 140, and this remains within the scope of the disclosure. In certain embodiments where the geometric shapes of the injector protrusion 118 and the reactor protrusion 130 differ, all or some of the different geometric shapes may be aligned along the vertical dashed line 140, or none may be aligned, and this remains within the scope of the disclosure.

[0045] The connecting member 106 is positioned between the injector holder 102 and the reactor flange 104 and defines the precursor opening 134. Together with the injector holder 102 and the reactor flange 104, the connecting member 106 provides a sealing mechanism for the flow of material layer precursor 10 from the precursor source 202 to the injector 234 after the material layer precursor 10 has flowed through the supply opening 236 and the precursor supply conduit 210 (shown in Figure 2). The sealing mechanism is further supported by the injector projection 118 and the reactor projection 130. The connecting member 106 is intended to be formed from a malleable material 146. The malleable material 146 may be a material that can be deformed without fracturing while under compressive force. The connecting member 106 may, in non-limiting examples, be formed from a soft metallic material such as nickel (Ni), palladium (Pd), platinum (Pt), titanium (Ti), and cadmium (Cd), other transition metal materials, or metal alloys.

[0046] The connector body 108 may be one of a plurality of connector bodies. The connector body 108 is slidably received by a plurality of longitudinal recesses 138 through a plurality of longitudinal openings 136. The connector body 108 may be mechanically coupled to the injector holder 102, the reactor flange 104, and the connecting member 106 such that the injector projection 118 and the reactor projection 130 can cause deformation of the connecting member 106 at the projections. As those skilled in the art will understand, in addition to deformation of the connecting member 106 at the projections, the connecting member 106 may also be subjected to compression by the injector holder 102 and the reactor flange 104 when the connector body 108 is further placed within the injector rim 116. This compression may further increase the sealing properties of the connecting member 106.

[0047] In the illustrated embodiment, a plurality of axial openings 136 are defined by the injector rim 116, while a plurality of axial recesses 138 are defined by the reactor rim 128. In certain embodiments, the plurality of axial openings 136 may be defined by the reactor rim 128, and the plurality of axial recesses 138 may be defined by the injector rim 116, still within the scope of the disclosure. The axial openings 136 may or may not have threads to slidably receive the connector body 108, and the axial recesses 138 may have threads. Although the connector body 108 is shown and described herein as similar to a “bolt”, the connector body 108 may include other techniques for connecting the injector holder 102, the reactor flange 104, and the connecting member 106. The connector body 108 is intended to be formed from a heat-resistant material 148. The connector body 108 is intended to be formed from a metallic material. The connector body 108 may, in non-limiting examples, be formed from silicon (Si), quartz, silicon carbide (SiC), aluminum oxide (Al2O3), stainless steel, or a metal alloy.

[0048] In the illustrated embodiment, the injector holder 102, reactor flange 104, and connecting member 106 connect the precursor source 202 to the hollow interior 226 of the chamber body 220 via the precursor supply conduit 210, supply opening 236, precursor opening 134, and injector 234 (shown in Figure 2) so that the material layer precursor 10 can be deposited on the substrate 2 to form the material layer 4. As will be understood by those skilled in the art, the precursor opening 134, reactor opening 132, and injection opening 120 may be aligned so that the material layer precursor 10 flows through the injector device 100 with minimal turbulence. Reducing the flow turbulence of the material layer precursor 10 can improve the uniformity of the material layer 4 formed on the substrate 2.

[0049] As shown in Figure 4, an exploded cross-sectional view of the injector device 100 is shown in which the connector body 108 is slidably received by a plurality of longitudinal recesses 138 through a plurality of longitudinal openings 136, and the connector body 108 is placed within the injector rim 116. In a particular embodiment, the plurality of longitudinal openings 136 may be defined by the reactor rim 128, and the plurality of longitudinal recesses 138 may be defined by the injector rim 116, and the connector body 108 is placed within the reactor rim 128 of the reactor flange 104.

[0050] As shown in Figure 5, a partial cross-sectional view of the injector device 100 is provided. In the illustrated embodiment, when the injector holder 102, coupling member 106, and reactor flange 104 are connected by the connector body 108, the injector projection 118 and reactor projection 130 may cause deformation of the connecting member 106 along the vertical dashed line 140. Although both the injector projection 118 and reactor projection 130 are shown and described herein as being aligned along the vertical dashed line 140, one or both of the injector projection 118 or reactor projection 130 may not be aligned along the vertical dashed line 140, and this remains within the scope of the disclosure. As will be understood by those skilled in the art, the injector projection 118 and reactor projection 130 may be aligned along the vertical dashed line 140 in the transverse view but not in the longitudinal view, and vice versa, and this remains within the scope of the disclosure. In certain embodiments, both the injector projection 118 and the reactor projection 130 may be aligned along the vertical dashed line 140 in both the lateral and longitudinal views, and this remains within the scope of the disclosure.

[0051] As shown in Figure 6, a partially cross-sectional exploded view of the injector device 100 is provided. In the illustrated embodiment, the injector projection 118 and the reactor projection 130 are shown to extend from the injector rim 116 and the reactor rim 128, respectively. In addition, the connecting member 106 is shown not to be pre-molded or pre-formed to receive either the injector projection 118 or the reactor projection 130. As will be understood by those skilled in the art, the connecting member 106 can take the geometric shape of the injector projection 118 and / or the reactor projection 130 when the connector body 108 connects the injector holder 102, the reactor flange 104, and the connecting member 106. When the injector holder 102, the reactor flange 104, and the connecting member 106 are connected together by the connector body 108, the connecting member 106 is compressed. The injector protrusion 118, together with the reactor protrusion 130, causes deformation of the connecting member 106, resulting in improved sealing of the injector device 100. The compression and deformation of the connecting member 106 may be partially attributable to the material selected for the connecting member 106, for example, the malleable material 146.

[0052] Referring to Figure 7, a material layer deposition method 300 is shown. The material layer deposition method 300 may also include a connector body 108 mechanically connecting an injector holder to a reactor flange via a connecting member between them, for example, the connector body being slidably received through a plurality of axial openings 136 and received by a plurality of axial recesses 138 (shown in Figure 3). The material layer deposition method 300 may also include placing a workpiece in a chamber body (e.g., a substrate 2 in a chamber body 220 (shown in Figure 2)), as shown in box 302. The material layer deposition method 300 may further include heating the workpiece in the chamber body to a predetermined material layer deposition temperature, for example, by applying power to an array of heating elements 222 to generate electromagnetic radiation in the infrared wavelength band (shown in Figure 2), as shown in box 304. The material layer deposition method 300 may further include, as shown in boxes 306 and 308, exposing a workpiece to a material layer precursor in the chamber body, for example, exposing a substrate 2 (shown in Figure 2) to a material layer precursor 10 (shown in Figure 2), and depositing a material layer on the workpiece using the material layer precursor, for example, depositing a material layer 4 (shown in Figure 2) using the material layer precursor 10.

[0053] As shown by box 302, placing a workpiece into the chamber body 302 may include opening a movable door below the pedestal, for example, a movable door 246 (shown in Figure 2) supporting the pedestal 232, and inserting the substrate support into the chamber body with one or more workpieces placed within the substrate support (for example, a substrate support 230 (shown in Figure 2) having multiple substrates 2). The movable door may then be closed. Placing a workpiece 302 may include opening a movable door below the pedestal and inserting the workpiece directly into the chamber body. Placing a workpiece into the chamber body 302 may be achieved using a controller, for example, using instructions recorded in one or more of a plurality of program modules 254 on memory 256, to open the movable door, place one or more workpieces within the substrate support, raise the substrate support into the chamber body, and close the movable door.

[0054] Heating the workpiece to a predetermined material layer deposition temperature 304 may include radiating heat into the chamber body, as shown by box 304. Radiative heating can be achieved by generating electromagnetic radiation in the infrared wavelength band from heater elements supported outside the chamber body, which is conducted through the ceramic material forming the chamber body, for example, using an array of heating elements 222 (shown in Figure 2) and conducted through the ceramic material 228 (shown in Figure 2) forming the chamber body 220. Heating the workpiece 304 may also include detecting the temperature of the workpiece using a temperature sensor array and transmitting a signal to a controller, for example, one or more temperature sensors 224 communicating with a controller 208 via a wired or wireless link 216 to transmit the temperature of the substrate 2 (shown in Figure 2). Heating the workpiece inside the chamber body 304 can be achieved by using a controller, for example, by using instructions recorded in one or more of a plurality of program modules 254 stored in the memory 256 of the controller 208 to control the array of heating elements, receive signals from temperature sensors, or adjust the output provided to the heater element array based on signals received from temperature sensors.

[0055] Exposure of the workpiece to a material layer precursor 306 may include exposing the workpiece to a silicon-containing material layer precursor, such as a non-chlorinated silicon-containing material layer precursor such as silane (SiH4) or disilane (Si2H6), and / or a halogenated, such as chlorinated silicon-containing material layer precursor such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si). Other material layer precursors include metal precursors, organometallic precursors, and halides. In some embodiments, the material layer precursor may include one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, group 13 elements, group 14 elements, chalcogens, nictogens, halogens, and noble gases. Exposure of a workpiece to a material layer precursor 306 may include exposing the workpiece to a dopant-containing material layer precursor or an alloy-containing material layer precursor, such as an n-type dopant-containing material layer precursor containing arsenic (As) or phosphorus (P), or a p-type dopant-containing material layer precursor containing boron (B), as well as a germanium-containing material layer precursor such as germanium (GeH4). Exposure of a workpiece to a material layer precursor 306 may include exposing the substrate to an etchant, such as a chlorinated etchant like hydrogen chloride (HCl) gas or chlorine (Cl2) gas, or a fluorinated composition like hydrofluoric acid (HF). Exposure of a workpiece to a material layer precursor 306 may include co-circulating a carrier or diluent fluid with a material layer precursor such as hydrogen (H2) gas or nitrogen (N2) gas. Exposure of a workpiece to a material layer precursor 306 may include exposing the workpiece to a mixture containing a silicon-containing material layer precursor, a dopant-containing material layer precursor, an etchant, and a carrier or diluent. It is also intended that exposure of a workpiece to a material layer precursor 306 may be achieved by using a controller to control the flow of the material layer precursor 10 from the precursor source 202 into the injector device 100 and then into the injector 234, for example, using instructions recorded in one or more of the multiple program modules 254 recorded in memory 256.

[0056] Depositing a material layer on a workpiece 308 may include depositing a substantially uniform material layer on the workpiece (for example, a material layer 4 deposited on a substrate 2 (shown in Figure 2)). Depositing a material layer 308 may include depositing a proprietary silicon material layer or a silicon-containing material layer such as silicon germanium, as well as a doped silicon-containing material layer. Depositing a material layer 308 may include depositing a non-chlorinated silicon-containing material layer precursor such as silane (SiH4) or disilane (Si2H6), and / or a halogenated, chlorinated silicon-containing material layer precursor such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si). Depositing a material layer 308 may include depositing other material layer precursors, including metal precursors, organometallic precursors, and halides. Depositing a material layer 308 may include depositing one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, group 13 elements, group 14 elements, chalcogens, nictogens, halogens, and noble gases. Depositing a material layer 308 may include depositing dopant-containing material layer precursors or alloy-containing material layer precursors, such as n-type dopant-containing material layer precursors containing arsenic (As) or phosphorus (P), or p-type dopant-containing material layer precursors containing boron (B), as well as germanium-containing material layer precursors such as germanium (GeH4). It is intended that the deposition of the material layer can be controlled by using a controller to control the flow of the material layer precursor 10 from the precursor source 202 into the injector device 100 and then into the injector 234, for example, by using instructions recorded in one or more of the multiple program modules 254 recorded in memory 256.

[0057] While this disclosure has been provided in the context of certain embodiments and forms, it will be understood by those skilled in the art that this disclosure extends beyond the embodiments specifically described to other alternative embodiments and / or uses and obvious modifications of these embodiments and their equivalents. In addition, while several variations of the embodiments of this disclosure are shown and described in detail, other modifications within the scope of this disclosure will be readily apparent to those skilled in the art based on this disclosure. Various combinations or partial combinations of certain features and aspects of the embodiments may be made and may still be included within the scope of this disclosure. Naturally, various features and aspects of the disclosed embodiments can be combined or substituted for each other to form changing modes of the embodiments of this disclosure. Therefore, it is not intended that the scope of this disclosure should be limited by the specific embodiments described above. The examples presented herein are not meant to represent the actual appearance of any particular material, structure, or device, but are merely idealized representations used to illustrate the embodiments of this disclosure.

[0058] Where headings are provided herein, they are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. An injector holder comprising an injector collar having a first injector collar end and a second injector collar end, and an injector rim connected to the first injector collar end and defining an injection opening, An injector slidably received by the second injector collar end, A reactor flange comprising a pipe member having a first pipe member end and a second pipe member end, and a reactor rim connected to the first pipe member end and defining a reactor opening, The reactor flange is fluidly connected to the injector holder, and a connecting member defines the precursor opening, A connector body configured to mechanically connect the injector holder to the reactor flange, It comprises at least one of an injector protrusion and a reactor protrusion, An injector device in which the injector projection extends from the injector rim around the injection opening, and the reactor projection extends from the reactor rim around the reactor opening.

2. The injector apparatus according to claim 1, comprising both the injector protrusion and the reactor protrusion.

3. The injector rim further defines a plurality of longitudinal openings radially outward from the injector protrusion, The reactor rim defines a plurality of longitudinal recesses on the radially outer side of the reactor protrusion, The injector device according to claim 1 or 2, wherein the connector body is placed within the injector rim which is slidably received by the plurality of longitudinal openings and connected to the plurality of longitudinal recesses.

4. The injector rim further defines a plurality of longitudinal recesses radially outward from the injector protrusion, The reactor rim defines a plurality of longitudinal openings radially outward from the reactor protrusion, The injector device according to claim 1 or 2, wherein the connector body is mounted in the reactor rim which is slidably received by the plurality of longitudinal openings and connected to the plurality of longitudinal recesses.

5. The injector apparatus according to claim 1 or 2, wherein the injector holder is made of a heat-resistant material and the reactor flange is made of a heat-resistant material.

6. The injector device according to claim 1 or 2, wherein the connecting member is made of a malleable material.

7. The injector device according to claim 1 or 2, wherein the connector body is one of a plurality of connector bodies and is made of a heat-resistant material.

8. An injector collar having a first injector collar end and a second injector collar end, An injector rim is connected to the first injector collar end of the injector collar and defines the injection opening, An injector holder comprising an injector projection extending from the injector rim around the injection opening.

9. The injector holder according to claim 8, further comprising an injector slidably received by a second injector collar end of the injector holder.

10. The injector holder according to claim 8 or 9, wherein the injector rim defines a plurality of longitudinal openings radially outward from the injector projection.

11. The injector holder according to claim 8 or 9, wherein the injector rim defines a plurality of longitudinal recesses radially outward from the injector projection.

12. The injector holder according to claim 8 or 9, wherein the injector holder is made of a heat-resistant material.

13. A pipe member having a first pipe member end and a second pipe member end, A reactor rim is connected to the first end of the pipe member and defines the reactor opening, A reactor flange comprising a reactor projection extending from the reactor rim around the reactor opening.

14. The reactor flange according to claim 13, further comprising a precursor source fluidly connected to the end of the second tubular member of the reactor flange.

15. The reactor flange according to claim 13 or 14, wherein the reactor rim further defines a plurality of longitudinal recesses extending radially outward from the reactor projection.

16. The reactor flange according to claim 13 or 14, wherein the reactor rim further defines a plurality of longitudinal openings radially outward from the reactor projection.

17. The reactor flange according to claim 13 or 14, wherein the reactor flange is made of a heat-resistant material.

18. An injector device according to claim 1 or 2, A precursor source fluidly connected to the injector device, A chamber body having a hollow interior, An exhaust source is fluidly connected to the chamber body and fluidly connected to the precursor source through the chamber body, A substrate support positioned inside the hollow interior of the chamber body, A workpiece supported on the aforementioned substrate support, A semiconductor processing system comprising: a controller operably connected to the precursor source and positioned to communicate with the precursor source, the controller deposits a material layer on the workpiece in response to instructions recorded in memory.

19. A method for depositing a material layer on a workpiece, The workpiece is disposed inside the chamber body of the semiconductor processing system, and the semiconductor processing system further comprises an injector device including an injector holder having an injector protrusion, a reactor flange having a reactor protrusion, a connecting member, and a connector body configured to mechanically connect the injector holder, the connecting member, and the reactor flange, wherein the connector body is configured to compress the connecting member between the injector holder and the reactor flange. The workpiece is placed inside the chamber body, The workpiece is heated to a predetermined material layer deposition temperature, Exposing the workpiece to the material layer precursor, A method comprising depositing the material layer on the workpiece using the material layer precursor.

20. The method further includes inserting a substrate support into the chamber body, The method according to claim 19, wherein the workpiece is placed on the substrate support and the workpiece is the substrate.

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