Method for manufacturing a channel structure and channel structure

Abstract

To provide a method for manufacturing a channel structure and a channel structure that can form the channel of a channel structure for industrial use in MEMS and the like into a target shape while reducing manufacturing costs. [Solution] The method for manufacturing the channel structure 100 includes a channel setting step of applying a predetermined set load to the surface of a base material 10 that will become the channel structure 100, along the channel direction which is the direction in which the channel 20 to be formed extends, and a starting point setting step of applying physical energy from the outside to the inside of the base material 10 to the starting point of the channel 20 to be formed. The set load is set based on at least one of the width W, depth D of the channel 20 to be formed and the position of the channel 20 in the base material 10. Through the channel setting step and the starting point setting step, a crack extends from the starting point inside the base material 10 to form the channel 20.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a flow path structure and a flow path structure.

Background Art

[0002] Glass has excellent properties such as thermal and chemical stability and light transparency, and is widely used industrially. As an industrial use method of glass, a flow path structure in which fine flow paths in the range of nanometers to micrometers are formed has attracted attention. The flow path structure can be used for MEMS (Micro Electro Mechanical Systems) etc. by filling the flow path with a conductive substance.

[0003] As a method for forming fine flow paths on a substrate, for example, photolithography technology is used. The photolithography technology includes a photosensitive material coating process, a mask placement process, an ultraviolet irradiation process, a development process, an etching process, etc. In the photosensitive material coating process, a photosensitive material is applied on the substrate, and in the mask placement process, a mask for forming a flow path pattern is placed on the photosensitive material. In the ultraviolet irradiation process, the solubility of the portion of the photosensitive material covered by the mask changes due to ultraviolet light, and in the development process, the portion of the photosensitive material with relatively high solubility is dissolved by the developer, leaving the photosensitive material according to the flow path pattern of the mask, and a part of the substrate is exposed. In the etching process, the exposed portion of the substrate is etched, thereby forming a flow path having a shape corresponding to the pattern of the mask on the substrate. For example, Patent Document 1 describes this kind of technology. Patent Document 1 relates to photolithography technology for manufacturing articles such as semiconductor devices and MEMS.

[0004] Further, Non-Patent Document 1 describes microfabrication for forming a flow path on a substrate by laser-assisted etching that combines laser irradiation and etching. Non-Patent Document 2 describes microfabrication of the glass surface by microindentation and wet etching that combines pressure application and etching. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2022-109320 [Non-patent literature]

[0006] [Non-Patent Document 1] Kunio Koyabu, "Journal of the Japan Society for Precision Engineering, Vol. 54, No. 9", published September 5, 1988, p. 1673-1677 [Non-Patent Document 2] Yasuhiro Saito and Takeshi Hidaka, "Journal of the Adhesion Society of Japan, Vol. 45, No. 9," published September 1, 2009, pp. 352-356. [Overview of the project] [Problems that the invention aims to solve]

[0007] When employing photolithography technology, such as that described in Patent Document 1, as a method for forming channels on a substrate to create a target channel structure, equipment is required to perform each step. For example, a coating device for applying a photosensitive material and an ultraviolet irradiation device for irradiating the entire surface of the substrate where the mask is formed with ultraviolet light are required. These devices are expensive, require maintenance costs, and each of the multiple steps requires specialized know-how.

[0008] Furthermore, even when employing laser-assisted etching as described in Non-Patent Document 1, equipment and facilities are required to irradiate the laser along the target channel. While it is also conceivable to employ microfabrication of the glass surface by microindentation and wet etching as described in Non-Patent Document 2, since the channel is formed by processing the glass surface, it is difficult to process high aspect ratio channels that are formed deeply into the substrate.

[0009] The inventors of this application have found potential in forming channels by utilizing the crack propagation phenomenon, which induces median cracks in the depth direction within a substrate by inducing plastic deformation of the substrate surface with a tool under these circumstances. In general crack formation in glass, such as in glass separation processes, median cracks, lateral cracks, and radial cracks are formed simultaneously, leading to a decrease in the strength of the substrate. However, in the crack propagation phenomenon that the inventors of this application have found potential in, the median crack in the depth direction propagates in a predetermined direction internally, thus enabling the formation of channels while suppressing a decrease in the strength of the substrate. If channels can be formed using the crack propagation phenomenon, it will be possible to form channels with high aspect ratios while reducing the complexity of the process and the necessary equipment compared to conventional techniques such as photolithography. However, when applied to industrial products such as MEMS, it is necessary to control the shape of the channel, such as its width, depth, and length. Even when using the crack propagation phenomenon, there was a challenge in controlling the shape of the channel.

[0010] This disclosure takes into account the above circumstances and aims to provide a method for manufacturing a channel structure and a channel structure that can form the channel of a channel structure for industrial use in MEMS and the like into a target shape while reducing manufacturing costs. [Means for solving the problem]

[0011] This disclosure relates to a method for manufacturing a channel structure having a channel, comprising: a channel setting step of applying a predetermined set load to the surface of a substrate that will become a channel structure, along the channel direction which is the direction in which the channel to be formed extends; and a starting point setting step of applying physical energy from the outside to the inside of the substrate to a position which will be the starting point of the channel to be formed, wherein the set load is set based on at least one of the width, depth, and position of the channel in the substrate, and the channel setting step and the starting point setting step cause a crack to extend from the starting point inside the substrate to form the channel structure.

[0012] The flow path setting step may apply the set load to the substrate by scribing the surface of the substrate with a flow path setting tool, and the starting point setting step may apply physical energy to the substrate by scribing a position on the surface of the substrate corresponding to the starting point position in a direction intersecting the flow path direction with a starting point setting tool.

[0013] The method for manufacturing the channel structure may further include a liquid introduction step of introducing liquid into the channel formed by the channel setting step and the starting point setting step.

[0014] In the liquid introduction step, an etching chemical solution may be introduced into the flow path as the liquid, and liquid etching may be performed for a certain period of time.

[0015] The starting point setting step may involve applying physical energy to the substrate by drilling a hole at a position corresponding to the starting point on the surface of the substrate, and the liquid introduction step may involve introducing the liquid into the flow path through the inlet formed by the drilling.

[0016] The flow path to be formed has a first flow path and a second flow path that branches off from or intersects with the first flow path, and the flow path setting step includes a first scribe step of applying the setting load along the direction of the second flow path in which the second flow path extends, and a second scribe step of applying the setting load along the direction of the first flow path in which the first flow path extends, and the starting point setting step may apply physical energy from the outside to the inside of the substrate to the starting point position of the first flow path, and may also apply physical energy from the outside to the inside of the substrate to the starting point position of the second flow path.

[0017] The second scribe step is performed after the first scribe step, and the set load in the second scribe step may be equal to or greater than the set load in the first scribe step.

[0018] The starting point setting step may include a first crack extension step of applying physical energy from the outside to the inside of the base material to the position serving as the starting point of the first flow path, extending a crack inside the base material in the first flow path direction to form the first flow path, and after the first flow path is formed by the first crack extension step, applying physical energy from the outside to the inside of the base material to the position serving as the starting point of the second flow path, extending a crack inside the base material in the second flow path direction to form the second flow path.

[0019] Moreover, one aspect of the present disclosure is a flow path structure manufactured by the manufacturing method described above.

Advantages of the Invention

[0020] According to the present disclosure, it is possible to provide a manufacturing method and a flow path structure of a flow path structure capable of forming a flow path of a flow path structure that can be industrially used for MEMS or the like into a target shape while reducing manufacturing costs.

Brief Description of the Drawings

[0021] [Figure 1] It is a schematic diagram showing the steps of a method for manufacturing a flow path structure according to a first embodiment of the present invention. [Figure 2] It is a cross-sectional perspective view schematically showing the state of the base material during the flow path setting step. [Figure 3] It is a cross-sectional perspective view schematically showing the state of the base material during the starting point setting step. [Figure 4] It is a longitudinal sectional view schematically showing the direction of crack extension inside the base material in the starting point setting step. [Figure 5] It is a longitudinal sectional view schematically showing the shape of the flow path formed by the flow path setting step and the starting point setting step. [Figure 6] It is an enlarged longitudinal sectional view schematically showing the shape of the flow path obtained by enlarging part A of FIG. 5. [Figure 7] It is a cross-sectional SEM image of a flow path structure showing the flow path actually formed by the flow path setting step and the starting point setting step. [Figure 8]This is a cross-sectional SEM image of the channel structure showing the surface distance of section a in Figure 7. [Figure 9] This is a cross-sectional SEM image of the channel structure showing the width of the channel, magnified from section b in Figure 7. [Figure 10] This graph shows the relationship between the depth, width, and surface distance of the channel and the set load. [Figure 11] This is a flowchart showing the steps for manufacturing a flow channel structure according to the second embodiment of the present invention. [Figure 12] This is a schematic diagram showing the starting point setting process and the liquid introduction process of the second embodiment. [Figure 13] This is an SEM image of a channel structure that has actually undergone etching during the liquid introduction process, viewed from an oblique angle. [Figure 14] This is an SEM image showing the shape of the channel when liquid etching is not performed on the channel formed by the channel setting process and the starting point setting process. [Figure 15] This is an SEM image showing an example of the shape of a channel after liquid etching is performed for 10 minutes using a liquid introduction process on a channel formed by the channel setting process and the starting point setting process. [Figure 16] This is an SEM image showing an example of the shape of a channel after liquid etching is performed for 20 minutes using a liquid introduction process on a channel formed by the channel setting process and the starting point setting process. [Figure 17] This is a schematic plan view showing a channel structure manufactured by the method for manufacturing a channel structure according to the third embodiment of the present invention. [Figure 18] This is a schematic plan view showing the substrate during the flow path setting process of the third embodiment. [Figure 19] This is a schematic plan view showing the substrate during the starting point setting process of the third embodiment. [Figure 20] This is a schematic diagram illustrating the scribe direction of the flow path setting step and the starting point setting step in the third embodiment performed in Example 3. [Figure 21] This is a micrograph showing the state of the substrate after the flow path setting process of the third embodiment. [Figure 22]This is a magnified micrograph of the intersection of a scribe mark in the Y direction and a scribe mark in the X direction, both under a set load of 0.3N. [Figure 23] This is a magnified micrograph of the intersection of a scribe mark in the Y direction with a set load of 0.6N and a scribe mark in the X direction with a set load of 0.3N. [Figure 24] This is a micrograph showing the state of a substrate after the starting point setting process was performed at a scribe mark in the Y direction with a set load of 0.6N, intersecting a scribe mark in the X direction with a set load of 0.3N. [Figure 25] These are magnified micrographs of the intersections of the scribe marks in the Y direction with a set load of 0.6N and the scribe marks in the Y direction with a set load of 0.9N, as well as the scribe mark in the X direction with a set load of 0.9N. [Figure 26] This is a micrograph showing the state of a substrate in which a starting point setting process was performed at a scribe mark in the Y direction with a set load of 0.9 N, intersecting a scribe mark in the X direction with a set load of 0.9 N. [Figure 27] This is a fluorescence microscope image showing a liquid containing fluorescent paint flowing through a channel in a substrate. [Modes for carrying out the invention]

[0022] Embodiments of the present invention will be described below with reference to the drawings. In the description of the second embodiment and subsequent embodiments, components common to the first embodiment will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate.

[0023] <First Embodiment> Figure 1 is a schematic diagram showing the steps of a method for manufacturing a channel structure 100 according to the first embodiment of the present invention. The method for manufacturing the channel structure 100 involves extending a crack into the interior of a base material 10 to produce a channel structure 100 having a channel 20.

[0024] The base material 10 that forms the foundation of the flow channel structure 100 is made of a brittle material such as glass, sapphire, or ceramics. A brittle material, as referred to here, is a material that develops internal cracks when subjected to a stress exceeding a certain level. In the first embodiment, the base material 10 is formed, for example, from a plate-shaped glass with a width of 20 mm, a depth of 50 mm, and a thickness of 1.1 mm. Examples of glass that can be used include borosilicate glass, alkali-free glass, and quartz glass. Although the base material 10 in this embodiment is formed in the shape of a plate, the shape of the base material 10 is not limited to a plate and may be in other shapes such as a block. Furthermore, the material of the base material 10 is not limited to the example configuration.

[0025] As shown in Figure 1, the manufacturing method of the flow channel structure 100 of the first embodiment includes a flow channel setting step and a starting point setting step. Each step will be described below.

[0026] The channel setting process involves applying a load to the surface of the substrate 10 using a channel setting tool 1 along the channel direction, which is the direction in which the channel 20 at the planned formation position 40 extends. In the schematic diagram of the channel setting process in Figure 1, the planned formation position 40, which indicates the location of the channel 20 to be formed, is shown by a dashed line.

[0027] The flow path setting tool 1 comprises, for example, an indenter 2 that contacts the base material 10, and an adjustment mechanism 3 that adjusts the load applied by the indenter 2. The indenter 2 is made of a material having a higher hardness than the material of the base material 10, such as diamond. The adjustment mechanism 3 is configured to adjust the load applied to the target base material 10 by, for example, a pneumatic cylinder connected to the indenter 2.

[0028] The direction and distance for scribing the indenter 2 in the flow path setting process are set according to the planned formation position 40 of the flow path 20. The scribing direction is indicated by the white arrow in the flow path setting process diagram in Figure 1. It is preferable to set the scribing distance with a margin that extends beyond the planned formation position 40 of the flow path 20.

[0029] The set load used to press the indenter 2 into the base material 10 during the flow path setting process is determined according to at least one of the shape of the flow path 20 at the target formation position 40 and the position of the flow path 20 on the base material 10. The method for setting the set load will be described later.

[0030] Figure 2 is a schematic cross-sectional perspective view showing the state of the substrate 10 during the flow path setting process. In Figure 2, the flow path direction is indicated by a dashed arrow, and the scribe direction toward one side of the flow path direction is indicated by a white arrow. As shown in Figure 2, in the first embodiment, stress is applied from the surface to the interior of the substrate 10 by scribing the surface of the substrate 10 along the flow path direction with the indenter 2. As the tip of the indenter 2 is pressed into the surface of the substrate 10, a plastic deformation region 41 is created on the surface of the substrate 10, and stress is generated in a direction perpendicular to the flow path direction. Scrib marks 11 are formed on the surface of the substrate 10 by scribing with the indenter 2.

[0031] In the first embodiment, the starting point setting step is performed after the flow path setting step. As shown in Figure 1, the starting point setting step applies physical energy from the outside to the inside of the substrate 10 at a position corresponding to the starting point 50 of the flow path 20 to be formed on the surface of the substrate 10. The starting point 50 of the flow path 20 is the position where the crack propagation described later begins, and is the position that will be the end of the flow path 20 that will be formed. The position corresponding to the starting point 50 is, in a plan view, a position on the surface of the substrate 10 that coincides with the starting point 50 in the thickness direction of the substrate 10.

[0032] In the starting point setting step of the first embodiment, the surface of the substrate 10 is scribed with the starting point setting tool 5 along a direction perpendicular to the flow direction, thereby forming countless minute cracks from the surface to the interior of the substrate 10. The starting point setting tool 5 is, for example, a gear-shaped wheel blade or an electroplated diamond bur.

[0033] Figure 3 is a schematic cross-sectional perspective view showing the state of the substrate 10 during the starting point setting process. During the starting point setting process, the starting point setting tool 5 passes over the surface of the substrate 10 at a position corresponding to the starting point 50 of the flow channel 20 to be formed, causing countless minute cracks to form in the substrate 10. Initial cracks 31 are formed on the surface of the substrate 10 by the scribing of the starting point setting tool 5.

[0034] Figure 4 is a schematic longitudinal cross-sectional view showing the direction of crack propagation inside the substrate 10 during the starting point setting process. As shown in Figure 4, the crack propagates into the substrate 10 from the starting point 50 corresponding to the position scribed by the starting point setting tool 5. The crack propagates in the opposite direction to the scribe direction of the indenter 2 during the flow path setting process. The direction of crack propagation can also be said to be the direction of the flow path.

[0035] Next, the method for determining the set load in the flow path setting process will be explained. Figure 5 is a schematic longitudinal cross-sectional view showing the shape of the flow path 20 formed by the flow path setting process and the starting point setting process. Figure 6 is an enlarged longitudinal cross-sectional view showing the shape of the flow path 20, enlarged from section A in Figure 5.

[0036] Figures 5 and 6 show a flow channel 20 whose shape is controlled by a set load. The shape of the flow channel 20 controlled by the set load is determined by the surface distance T, depth D, and width W of the flow channel 20.

[0037] The surface distance T indicates the vertical position of the channel 20 on the substrate 10. Here, the vertical direction refers to the thickness direction of the substrate 10. The surface distance T is a numerical value that indicates the depth from the surface of the substrate 10 to the upper end of the channel 20. The surface distance T can also be said to be a numerical value that indicates the degree of plastic deformation of the plastic deformation region 41 that has been plastically deformed by being subjected to a set load. For ease of measurement, as shown in Figure 5, the surface distance T' may be measured as the distance from the lower end of the recess of the substrate 10 to the upper end of the channel 20.

[0038] The set loads corresponding to surface distances T and T' are determined, for example, based on a table showing the correspondence between surface distances T and T' and the set loads, or a calculation formula that calculates the set load when surface distances T and T' are input. The table showing the correspondence between surface distances T and T' and the set loads is pre-set based on measured values, etc. The calculation formula is a calculation formula derived from measured values ​​or theoretically. That is, the manufacturer of the channel structure 100 can determine the corresponding set loads by specifying the surface distances T and T' that indicate the positions of the channels 20 to be formed.

[0039] The depth D of the channel 20 is the length in the vertical direction of the channel 20. In the channel setting process, a method for determining the set load corresponding to the depth D of the channel 20 is predetermined.

[0040] The set load corresponding to the depth D of the channel 20 is determined, for example, based on a table showing the correspondence between the depth D of the channel 20 and the set load, or a calculation formula that calculates the set load when the depth D of the channel 20 is input. The table showing the correspondence between the depth D of the channel 20 and the set load is set in advance based on measured values, etc. The calculation formula is a calculation formula derived from measured values ​​or theoretically. In other words, the manufacturer can determine the corresponding set load by specifying the depth D of the channel 20 to be formed.

[0041] The flow path 20 formed through the flow path setting process and the starting point setting process has a bottom 21 that is oblique to the depth direction. The depth D of the flow path 20 only needs to correspond to the set load based on a certain standard, and may or may not reflect the inclination of the flow path 20. For example, the depth D of the flow path 20 may be set based on the upper and lower ends of the flow path 20 in the depth direction, or based on the vertical length at a certain position, or based on the length of the flow path 20 including the inclination of the bottom 21. In any case, a set load corresponding to the depth D of the flow path 20 based on a certain standard is set in advance.

[0042] The width W of the channel 20 is the width of the channel 20 in the direction perpendicular to the depth direction of the channel 20 when viewed in the direction of the channel, and in this example it represents the horizontal length of the channel 20. In the channel setting process, a method for determining the set load corresponding to the width W of the channel 20 is predetermined.

[0043] The set load corresponding to the width W of the channel 20 is determined, for example, based on a table showing the correspondence between the width W of the channel 20 and the set load, or a calculation formula that calculates the set load when the width W of the channel 20 is input. The table showing the correspondence between the width W of the channel 20 and the set load is set in advance based on measured values, etc. The calculation formula is a calculation formula derived from measured values ​​or theoretically. In other words, the manufacturer can determine the corresponding set load by specifying the width W of the channel 20 to be formed.

[0044] The width W of the channel 20 should correspond to the set load based on certain criteria. For example, the width W of the channel 20 may be set as a representative value of the horizontal distance in the depth direction, or as the maximum width of the channel 20, or as the horizontal distance of the channel 20 at any set distance in the depth direction from the surface of the base material 10.

[0045] In the first embodiment, the manufacturer specifies at least one of the surface distance T, the depth D of the surface distance T', and the width W of the flow path 20, thereby determining the set load in the flow path setting process. That is, the surface distance T, depth D, and width W of the flow path 20 are predetermined for the set load. [Examples]

[0046] Next, we will describe Example 1, in which the depth D, width W, and surface distance T' of the flow channel 20 formed by actually manufacturing the flow channel structure 100 of the first embodiment were actually measured.

[0047] The experimental conditions are described below. Substrate 10 was made of alkali-free glass with a thickness of 0.3 mm. In the flow path setting process, the surface of substrate 10 was scribed at a scanning speed of 30 mm / s using a SOLID-D diamond tool manufactured by Mitsuboshi Diamond Industrial Co., Ltd. as the flow path setting tool 1. This flow path setting process was performed by changing the set load under four conditions: 0.3 N, 0.86 N, 1.5 N, and 2.1 N. In the starting point setting process, the surface of substrate 10 was scribed at a scanning speed of 30 mm / s using a gear-shaped wheel blade of MicroPenett manufactured by Mitsuboshi Diamond Industrial Co., Ltd. as the starting point setting tool 5. The load in the starting point setting process was uniformly set to 10 N without any changes.

[0048] Figure 7 is a cross-sectional SEM image of the channel structure 100 showing the channel 20 actually formed by the channel setting process and the starting point setting process. Figure 8 is a cross-sectional SEM image of the channel structure 100 showing the surface distance T', which is an enlarged view of part a in Figure 7. Figure 9 is a cross-sectional SEM image of the channel structure 100 showing the width of the channel 20, which is an enlarged view of part b in Figure 7.

[0049] As shown in Figures 7 to 9, it was demonstrated that a crack extended at a depth D of 2.0 μm from the surface of the substrate 10, forming a channel 20 with a width W of 140 nm. It was also shown that minute scribe marks 11 were formed on the surface of the substrate 10 during the channel setting process.

[0050] Figure 10 is a graph showing the relationship between the depth D, width W, and surface distance T' of the channel 20 and the set load. Figure 10 shows the set load applied to the substrate 10 during the channel setting process, and the measured values ​​of the depth D [μm], width W [nm], and surface distance T' [μm] of the channel 20 when the set load is applied. The depth D [μm] [μm], width W [nm], and surface distance T' [μm] of the channel 20 were measured multiple times on a substrate 10 of the same shape and configuration, changing the set load during the channel setting process.

[0051] The measurement results in Figure 10 show a tendency for the depth D [μm], width W [nm], and surface distance T' [μm] of the channel 20 to increase as the set load increases. The depth D [μm] and width W [nm] of the channel 20 increase proportionally to the set load in the range of 0.5N to 2.5N. The surface distance T' also increases proportionally to the set load in the range of 0.5N to 2.0N. Thus, it can be seen that there is a correlation between the depth D [μm], width W [nm], and surface distance T' [μm] of the channel 20 and the set load. In the range of set loads above 2.0N, the correlation of the surface distance T' is low, which is thought to be due to the stress generated when the base material 10 is cut in order to measure the cross-section.

[0052] The results of Example 1 showed that the set load in the flow path setting process can be determined based on the correlation between the shape of the flow path 20 to be formed and the set load. For example, an approximate formula may be derived from the plot of measurement results in Figure 10, with the depth D [μm], width W [nm], or surface distance T' [μm] of the flow path 20 as parameters, and the set load for forming the target flow path 20 in the substrate 10 may be determined by this approximate formula.

[0053] As described above, the manufacturing method of the first embodiment of the flow channel structure 100 includes a flow channel setting step of applying a predetermined set load to the surface of the base material 10 which will become the flow channel structure 100, along the flow channel direction which is the direction in which the flow channel 20 to be formed extends, and a starting point setting step of applying physical energy from the outside to the inside of the base material 10 to the position which will be the starting point 50 of the flow channel 20 to be formed. The set load is set based on at least one of the width W, depth D of the flow channel 20 to be formed and the position of the flow channel 20 in the base material 10 (surface distance T or surface distance T'). Through the flow channel setting step and the starting point setting step, a crack extends from the starting point 50 inside the base material 10 to form the flow channel 20.

[0054] This allows for the efficient manufacture of a channel structure 100 having a channel 20 of the desired shape, without requiring complex processes or expensive equipment compared to conventional technologies such as photolithography. By utilizing the crack propagation phenomenon in which median cracks extend in the depth direction within the substrate 10, the channel 20 can be formed while suppressing a decrease in the strength of the substrate 10. The channel structure 100 can be applied to MEMS and other applications by filling the channel 20 with a conductive material, enabling increased manufacturing efficiency in a wide range of industrial fields.

[0055] Furthermore, in this embodiment, the flow path setting step applies a set load to the substrate 10 by scribing the surface of the substrate 10 with the flow path setting tool 1, and the starting point setting step applies physical energy to the substrate 10 by scribing the position corresponding to the starting point 50 on the surface of the substrate 10 with the starting point setting tool 5 in a direction intersecting the flow path direction.

[0056] This allows for the efficient and reliable formation of plastic deformation regions 41 corresponding to the planned flow channels 20 by scribing the surface of the substrate 10 during the flow channel setting process. Furthermore, the application of physical energy during the starting point setting process can be performed by mechanical scribing using the starting point setting tool 5 without the need for complex processes or equipment.

[0057] <Second Embodiment> Next, with reference to Figures 11 and 12, a method for manufacturing the flow channel structure 100 according to a second embodiment, which differs from the first embodiment, will be described. Figure 11 is a flowchart showing the steps of the method for manufacturing the flow channel structure 100 according to the second embodiment of the present invention. Figure 12 is a schematic diagram showing the starting point setting step and the liquid introduction step of the second embodiment.

[0058] As shown in Figure 11, in the manufacturing method of the flow channel structure 100 of the second embodiment, first, in step S1, a flow channel setting process similar to that of the first embodiment is performed.

[0059] Next, in step S2, a starting point setting step is performed. In the starting point setting step of the second embodiment, physical energy is applied to the position that will become the starting point 50 of the flow path 20 by performing ultrasonic-assisted drilling. A flow path 20 similar to that of the first embodiment is formed inside the base material 10.

[0060] The starting point setting process shown in the upper part of Figure 12 includes a schematic perspective view illustrating the flow channel structure 100 in which the inlet 30 is formed. As shown in the schematic diagram of the starting point setting process in Figure 12, in the second embodiment, the inlet 30 is formed at the end of the flow channel 20 in the flow channel direction during the starting point setting process.

[0061] In step S3, a liquid introduction step is performed on the substrate 10, which has a flow path 20 and an injection port 30 formed through the flow path setting step in step S1 and the starting point setting step in step S2. In the liquid introduction step, a liquid etching chemical is introduced into the flow path 20 through the injection port 30. Examples of liquid etching chemicals include HF (hydrofluoric acid) and potassium hydroxide aqueous solution. The width W of the flow path 20 is widened by erosion caused by the chemical in the liquid introduction step. Furthermore, as the erosion progresses, the upper part of the flow path 20 is also exposed to the outside due to the erosion.

[0062] In liquid etching, the surface of the substrate 10 and the injection port 30 are corroded by the chemical solution HF. The connection between the flow channel 20 and the injection port 30 may become blocked during the diamond drilling process, but even in such cases, the opening of the flow channel 20 connected to the injection port 30 becomes larger due to etching erosion, and HF gradually enters the flow channel 20.

[0063] The liquid introduction process shown at the bottom of Figure 12 includes a schematic vertical cross-sectional view illustrating the shape of the channel 20a eroded by liquid etching. As shown in the schematic diagram of the liquid introduction process in Figure 12, in the second embodiment, erosion progresses by sandwiching the substrate 10 from both the surface side and the internal channel 20 side, resulting in the formation of a groove-shaped channel 20a with an open top in the substrate 10. Furthermore, the width of the channel 20a after the liquid introduction process is wider than the width of the channel 20 before the liquid introduction process. In addition, the bottom 21a of the channel 20a is inclined due to the influence of the shape of the channel 20 before the liquid introduction process. The shape of the channel 20a after etching will also be explained in Figure 16 of Example 2. [Examples]

[0064] Next, we will describe Example 2, in which a liquid introduction step using a liquid etching chemical was actually performed on the channel 20 formed by the channel setting step and the starting point setting step. In Example 2 below, the liquid etching chemical was HF, and the concentration was set to two conditions: 5 [wt%] and 10 [wt%]. The etching time was also set to two conditions: 10 [min] and 20 [min]. The set load in the channel setting step was set to three conditions: 0.3 N, 1.2 N, and 2.0 N. The ultrasonic drilling was performed with a diamond drill with a drill diameter of 2.0 mm at a rotation speed of 29,000 rpm and a hole depth of 50 μm.

[0065] Figure 13 is an oblique SEM image of the channel structure 100, which was actually etched by the liquid introduction process. The image in Figure 13 corresponds to the location of region B enclosed by the dashed line in Figure 12. As shown in Figure 13, as a result of actually performing the liquid introduction process, the channel 20 was formed in all combinations of conditions of Example 2, and a groove-shaped channel 20a with an open upper part near the injection port 30 was also formed.

[0066] Referring to the SEM images of Example 2 in Figures 14 to 16, the effect of the etching time in the liquid introduction process on the width of the flow path 20 will be explained.

[0067] Figure 14 is an SEM image showing the shape of the channel 20 when liquid etching is not performed on the channel 20 formed by the channel setting process and the starting point setting process. In the example in Figure 14, the channel setting process is performed with a set load of 2.0 N, and the width W of the channel 20 is 140 nm.

[0068] Figure 15 is an SEM image showing an example of the shape of the channel 20 after liquid etching by a liquid introduction step is performed for 10 minutes on the channel 20 formed by the channel setting step and the starting point setting step. In the example in Figure 15, the channel setting step is performed with a set load of 2.0 N, and the concentration of HF in the liquid introduction step is 10 [wt%], resulting in a channel width W of 112 nm.

[0069] Figure 16 is an SEM image showing an example of the shape of channel 20a when liquid etching is performed for 20 minutes by a liquid introduction step on channel 20 formed by the channel setting step and the starting point setting step. In the example in Figure 16, the channel setting step is performed with a set load of 2.0 N, and the concentration of HF in the liquid introduction step is 10 [wt%], resulting in a channel width W of 7.0 μm.

[0070] As shown in Figures 14 and 15, the shape of the channel 20 was similar in the case of no etching and when liquid etching was performed with an HF concentration of 10 wt% for 10 minutes, and no effect of liquid etching on the width W of the channel 20 could be confirmed. On the other hand, as shown in Figure 16, by extending the liquid etching time from 10 minutes to 20 minutes, the width W of the channel 20a clearly increased, and the top of the channel 20 also became open. From these experimental results, it was shown that by performing liquid etching with a chemical solution for a certain period of time, the width W of the channel 20 can be widened and a groove-shaped channel 20a can be formed in the substrate 10. Furthermore, while the edges of grooves are generally arc-shaped in normal liquid etching, in the liquid etching process of this embodiment, the edges of the channel 20a were not arc-shaped but formed in a angular shape.

[0071] As described above, the method for manufacturing the flow channel structure 100 of the second embodiment further includes a liquid introduction step of introducing liquid into the flow channel 20 formed by the flow channel setting step and the starting point setting step.

[0072] This allows the length of the channel 20 to be extended or the width W to be widened by the liquid introduced into the channel 20, enabling more precise control over the shape of the channel 20.

[0073] In the second embodiment, an etching solution is introduced into the flow path 20 as a liquid, and liquid etching is performed for a certain period of time.

[0074] This ensures that the width W of the channel 20a is reliably widened by the erosion of the chemical solution. Furthermore, by adjusting the etching time, the upper part of the channel 20 can be eroded to form a groove-shaped channel 20a in the substrate 10. The groove-shaped channel 20a facilitates the filling of conductive material. After filling the channel 20 with conductive material, the upper part can be filled with another material. Moreover, microfabrication to form a high aspect ratio groove (for example, 5 μm wide and 20 μm deep) becomes easily possible by etching from the surface of the substrate 10 and etching from the inside of the channel 20.

[0075] Furthermore, in the second embodiment, the starting point setting step involves drilling a hole at a position corresponding to the starting point 50 on the surface of the substrate 10, thereby applying physical energy to the substrate 10, and in the liquid introduction step, liquid is introduced into the flow path 20 through the injection port 30 formed by the drilling process.

[0076] This allows liquid to be easily introduced into the flow path 20 through the inlet 30, and the process of forming the inlet 30 can be combined with the starting point setting process, thereby streamlining the manufacturing of the flow path structure 100, including the liquid introduction process.

[0077] <Third Embodiment> Next, a method for manufacturing the flow channel structure 100 according to the third embodiment, which differs from the first and second embodiments, will be described. Figure 17 is a schematic plan view showing the flow channel structure 100 manufactured by the method for manufacturing the flow channel structure 100 according to the third embodiment of the present invention. In the following description, the left-right direction on the plane of Figure 17 will be referred to as the X direction (first flow channel direction), and the up-down direction on the plane of the paper will be referred to as the Y direction (second flow channel direction).

[0078] As shown in Figure 17, the manufacturing method for the flow channel structure 100 of the third embodiment manufactures a flow channel structure 100 having flow channels 120 that branch or intersect inside the base material 10. In this example, the flow channel 120 comprises a first flow channel 121 extending in the X direction and a second flow channel 122 extending downward in the Y direction from the middle of the first flow channel 121, and is T-shaped in plan view. The second flow channel 122 may penetrate the first flow channel 121 upwards. That is, the flow channel 120 may be formed in a cross shape.

[0079] Next, the manufacturing process of the flow channel structure 100 will be described with reference to Figures 18 and 19. Figure 18 is a schematic plan view showing the substrate 10 during the flow channel setting process of the third embodiment. As shown in Figure 18, the flow channel setting process of the third embodiment includes a first scribe step and a second scribe step.

[0080] The first scribing step involves applying a first set load to the interior of the base material 10 by scribing the surface of the base material 10 along the Y direction, which is the direction of the flow path in which the second flow path 122 of the flow path 120 to be formed extends, thereby causing plastic deformation.

[0081] The second scribing step applies a second set load to the interior of the substrate 10 by scribing the surface of the substrate 10 along the X direction, which is the direction of the flow path of the first flow path 121 of the flow path 120 to be formed, thereby causing plastic deformation. The scribing in the second scribing step is performed so as to pass through the scribe mark 111 extending in the Y direction, which was formed by the scribing in the first scribing step. The second set load is set to a value greater than the first set load. In this example, the second flow path setting step is performed after the first scribing step. After the first and second scribing steps are performed, the starting point setting step is performed.

[0082] Figure 19 is a schematic plan view showing the substrate 10 during the starting point setting process of the third embodiment. As shown in Figure 19, the starting point setting process of the third embodiment includes a first crack propagation process and a second crack propagation process.

[0083] The stress in the first crack propagation step is applied by scribing with the starting point setting tool 5, as in the first embodiment. In the first crack propagation step, stress is applied from the surface to the interior of the substrate 10 along the Y direction, which is perpendicular to the direction in which the first channel 121 extends, relative to the position corresponding to the starting point 150 of the first channel 121. The scribing in the first crack propagation step is performed so as to pass through the right end of the scribe mark 112 extending in the X direction, which was formed by the scribing in the second scribing step. The scribing in the first crack propagation step forms a scribe mark 131 extending in the Y direction.

[0084] In the first crack propagation step, a crack propagates from the starting point 150 inside the substrate 10, forming the first channel 121 portion of the channel 120 inside the substrate 10. The first crack propagation direction of the crack that becomes the first channel 121 of the channel 120 is the opposite direction to the scribe direction in the second scribe step, and is the direction to the left from the starting point 150 located on the right side of the plane of the substrate 10. After the first channel 121 of the channel 120 is completely formed by the crack generated by the first crack propagation step, the second crack propagation step is performed. That is, the second crack propagation step is performed after waiting for the formation of the first channel 121 by the first crack propagation step.

[0085] The second crack propagation step applies stress from the surface to the interior of the substrate 10 along a direction perpendicular to the direction in which the second channel 122 extends, relative to the starting point 160 of the second channel 122. The direction perpendicular to the direction in which the second channel 122 extends is the X direction. The stress application in the second crack propagation step is also performed by scribing with the starting point setting tool 5, similar to the first embodiment. The scribing in the second crack propagation step forms a scribe mark 132 extending in the X direction.

[0086] In the second crack propagation step, the portion of the second channel 122 in the planned channel 120 is formed inside the substrate 10. The direction of the second crack propagation of the crack that will become the second channel 122 of channel 120 is the opposite direction to the scribe direction in the first scribe step, and is from the bottom side of the paper to the top side, which is the starting point 160 in the Y direction scribed in the second crack propagation step.

[0087] The second channel 122, formed by the crack propagation in the second crack propagation process, is connected to the first channel 121. The formation of the second channel 122 creates branching or intersecting channels 120 inside the substrate 10. [Examples]

[0088] Next, we will describe Example 3, in which branching or intersecting channels 120 are actually formed inside the substrate 10 using the channel setting process and starting point setting process of the third embodiment, and the effect of stress is confirmed. Figure 20 is a schematic diagram illustrating the scribe direction of the channel setting process and starting point setting process of the third embodiment performed in Example 3. Figure 21 is a micrograph showing the state of the substrate 10 after the channel setting process of the third embodiment has been performed.

[0089] Figures 20 and 21 show a substrate 10 in which three scribe marks 111a to 111c extending in the Y direction and one scribe mark 112 extending in the X direction have been formed during the flow path setting process. In this embodiment 3, the three scribe marks 111a to 111c extending in the Y direction are formed first, and then the scribe mark 112 extending in the X direction is formed.

[0090] The three scribe marks 111a to 111c extending in the Y direction are formed by scribing the surface of the substrate 10 with different set loads. The leftmost scribe mark 111a in the Y direction in the photograph was formed by scribing with a set load of 0.9N, the central scribe mark 111b in the Y direction was formed by scribing with a set load of 0.6N, and the rightmost scribe mark 111c in the Y direction was formed by scribing with a set load of 0.3N. The scribe mark 112 extends in the X direction and intersects each of the three scribe marks 111a to 111c extending in the Y direction. This scribe mark 112 in the X direction is formed by scribing from left to right in the photograph.

[0091] In Example 3, the base material 10 was formed under two conditions with different set loads during scribing in the X direction. In the first condition, the set loads for forming the three scribe marks 111a to 111c in the Y direction during the first scribing step were set to 0.9N, 0.6N, and 0.3N, respectively, and the set load for forming the scribe mark 112 in the X direction during the second scribing step was set to 0.3N. The scribe mark 112 in the X direction shown in the photograph in Figure 20 was formed by scribing in the X direction with a set load of 0.3N.

[0092] Under the first condition, a starting point setting process is performed on the scribe mark 112 in the X direction on the substrate 10, causing the crack to extend from the starting point.

[0093] The crack extending inside the substrate 10 first passes through the Y-direction scribe mark 111c, one of the three Y-direction scribe marks 111a to 111c, which has a set load of 0.3N. Figure 22 is a magnified micrograph of the intersection of the Y-direction scribe mark 111c with a set load of 0.3N and the X-direction scribe mark 112 with a set load of 0.3N. As shown in Figure 22, the X-direction crack with a set load of 0.3N extended through the point where it intersects with the Y-direction scribe mark 111c, which also has a set load of 0.3N.

[0094] The crack, having passed through the Y-direction scribe mark 111c at a set load of 0.3N, then reaches the Y-direction scribe mark 111b at a set load of 0.6N. Figure 23 is a magnified micrograph of the intersection of the Y-direction scribe mark 111b at a set load of 0.6N and the X-direction scribe mark 112 at a set load of 0.3N. As shown in Figure 23, the X-direction crack corresponding to the set load of 0.3N extended to both sides in the Y-direction before reaching the Y-direction scribe mark 111b at the point where it intersected with the Y-direction scribe mark 111b at a set load of 0.6N. Therefore, the X-direction crack did not extend to the Y-direction scribe mark 111a at a set load of 0.9N. Furthermore, the Y-direction crack extension at this time deviated from the Y-direction scribe mark 111b.

[0095] An experiment was conducted to confirm whether a newly extending crack would connect to the first channel 121 formed in Figure 23 when a starting point setting process was performed on a scribe mark 111b in the Y direction with a set load of 0.6 N. Figure 24 is a micrograph showing the state of the substrate 10 when a starting point setting process was performed on a scribe mark 111b in the Y direction with a set load of 0.6 N, which intersects with a scribe mark 112 in the X direction with a constant load of 0.3 N. Figure 24 shows how a crack extended from the bottom to the top when a starting point setting process was performed on the lower side in the Y direction of the scribe mark 111b with a set load of 0.6 N. In this example, the newly extending crack did not connect to the first channel 121 formed in Figure 23. That is, in the example of Figure 24, it was not possible to form a branched or intersecting channel 120.

[0096] Next, we will describe the second condition in which the set load of the scribe in the X direction was changed. In the second condition, the set load of one scribe in the X direction was set to 0.9N, and the set loads of the three scribes in the Y direction were set to 0.9N, 0.6N, and 0.3N, respectively, from left to right on the page. Then, by performing the starting point setting process on the right side of the scribe mark 112 in the X direction, the crack was extended from right to left.

[0097] Figure 25 shows magnified micrographs of the intersections of the scribe marks 111b in the Y direction with a set load of 0.6N, 111a in the Y direction with a set load of 0.9N, and 112 in the X direction with a set load of 0.9N. As shown in Figure 25, at the intersection of the scribe marks 111b in the Y direction with a set load of 0.6N, the crack extended in the X direction without deviating in the Y direction. Furthermore, crack extension stopped at the intersection of the scribe marks 111a in the Y direction with a set load of 0.9N.

[0098] Figure 26 is a micrograph showing the state of the substrate 10 after performing a starting point setting process at a scribe mark 111a in the Y direction with a set load of 0.9 N, which intersects with a scribe mark 112 in the X direction with a set load of 0.9 N. Figure 26 shows how the crack extends from the bottom to the top by performing the starting point setting process on the lower side in the Y direction of the scribe mark 111a with a set load of 0.9 N. In this example, a first channel 121 formed by the crack extending at the location of the scribe mark 112 in the X direction and a second channel 122 formed by the crack extending at the location of the scribe mark 111a in the Y direction with a set load of 0.9 N are connected. As a result, a T-shaped channel 120 is formed inside the substrate 10.

[0099] This third embodiment demonstrates that the set load applied during the flow path setting process affects the branching or intersecting flow paths 120. More specifically, when the set load used to form the scribe mark 112 in the X direction was lower than the set load used to form the scribe mark 111 in the Y direction, the crack extending in the X direction bent in the Y direction before reaching the scribe mark 111b in the Y direction (see Figure 23). On the other hand, when the set load used to form the scribe mark 112 in the X direction was greater than or equal to the set load used to form the scribe marks 111a to 111c in the Y direction, the crack extending in the X direction passed through the scribe marks 111a to 111c in the Y direction and extended in the X direction (see Figure 25). In other words, it was demonstrated that by setting the set load for the scribe marks 112 in the X direction, which are scribed later, higher than the set load for the scribe marks 111a to 111c in the Y direction, which are scribed earlier, a first flow path 121 extending in the X direction can be formed inside the substrate 10. Previous studies have shown that crack propagation occurs linearly due to the influence of shear stress and tensile stress during scribing. Since shear stress increases with increasing set load during scribing, it is considered that cracks propagate in the Y direction only when the shear stress in the Y direction is greater than the shear stress in the X direction. Of the cracks that extended in the Y direction, it is thought that the crack propagation stopped midway due to the influence of the shear stress that formed the scribe mark 111 in the Y direction.

[0100] Furthermore, it was shown that in the starting point setting process, the second channel 122 and the first channel 121 connect to form a branched or intersecting channel 120. On the other hand, as shown in Figure 24, if the set load of the scribe mark 112 in the X direction is lower than the set load of the scribe marks 111a to 111c in the Y direction, and the crack in the Y direction deviates from the scribe mark 111b, it was shown that the cracks that extend in the second crack extension process do not connect. This is thought to be due to the influence of the stress field at the intersection. In the example in Figure 26, the shear stresses in the X and Y directions are orthogonal, so they do not affect the extension, but in the example in Figure 24, the branched crack deviates from the scribe mark 111b, so it is thought that there is insufficient residual stress necessary for crack extension.

[0101] As described above, the flow path setting step of the manufacturing method for the flow path structure 100 of the third embodiment is such that the flow path 120 to be formed has a first flow path 121 and a second flow path 122 that branches off from or intersects with the first flow path 121, and the flow path setting step includes a first scribe step of applying a set load along the Y direction as the second flow path direction to which the second flow path 122 extends, and a second scribe step of applying a set load along the X direction as the first flow path direction to which the first flow path 121 extends, and the starting point setting step applies physical energy from the outside to the inside of the base material 10 to the position that will be the starting point 150 of the first flow path 121, and also applies physical energy from the outside to the inside of the base material 10 to the position that will be the starting point 160 of the second flow path 122.

[0102] This makes it possible to form branching or intersecting channels 120 inside the substrate 10 without requiring a large apparatus configuration or complex processes as in conventional technology.

[0103] Furthermore, in the third embodiment, a second scribe process is performed after the first scribe process, and the set load for the second scribe process is equal to or greater than the set load for the first scribe process.

[0104] As a result, the crack extending in the X direction due to the starting point setting process performed on the scribe mark 112 in the X direction can continue to extend in the X direction even when it reaches the scribe mark 111 in the Y direction. By preventing the crack from deviating in the Y direction, the second channel 122 formed in the starting point setting process performed on the scribe mark 111 in the Y direction can be reliably connected by the first channel 121.

[0105] Furthermore, in the third embodiment, the starting point setting step includes a first crack propagation step in which physical energy is applied from the outside to the inside of the base material 10 at a position that will be the starting point 150 of the first flow path 121, causing a crack to extend in the X direction inside the base material 10 to form the first flow path 121, and a second crack propagation step in which, after the first flow path 121 has been formed by the first crack propagation step, physical energy is applied from the outside to the inside of the base material 10 at a position that will be the starting point 160 of the second flow path 122, causing a crack to extend in the Y direction inside the base material 10 to form the second flow path 122.

[0106] As a result, after the first channel 121 is formed by the first crack propagation step, the crack propagates in the second crack propagation step, and the second channel 122 connects to the first channel 121. Therefore, it is possible to avoid a situation where the crack that will become the first channel 121 propagates while the crack that will become the second channel 122 is propagating, preventing the connection between the second channel 122 and the first channel 121, and thus reliably form branched or intersecting channels 120.

[0107] <Method for checking the flow path> The channels 20 formed in the substrate 10 are formed in positions that overlap with the scribe marks 11. Therefore, even if the substrate 10 is made of a transparent or translucent material, the channels 20 may be difficult to see from the outside. An example of a method for confirming the channels 20 is described below. The formation of channels 20, 20a and 120 can be easily confirmed by introducing a liquid fluorescent paint and performing dynamic observation using a fluorescence microscope. Dynamic observation using a fluorescence microscope can be performed, for example, using epoxy dye as the fluorescent paint, dimethylformamide as the solution, and an excitation wavelength of 455 nm or less.

[0108] Dynamic observation was performed on a substrate 10 with a set load of 1.2N in the channel setting process and a channel width W of 100nm. The movement of the fluorescent paint liquid flowing through the channel 20 at a speed of 7.78μm / s was confirmed. Figure 27 is a fluorescence microscope image showing the flow of the liquid containing the fluorescent paint through the channel 20 of the substrate 10. Figure 27 shows the visible movement of the fluorescent paint liquid flowing through the channel 20 formed by the manufacturing method of the channel structure 100 of the first embodiment. Fluorescence observation of a substrate 10 with a set load of 2.0N in the channel setting process and a channel width W of 150nm also confirmed the movement of the fluorescent paint liquid flowing through the channel 20 at a speed of 12.4μm / s.

[0109] As explained with reference to Figure 5, the bottom 21 of the channel 20 is inclined with respect to the vertical direction of the substrate 10. Therefore, in a plan view, the width of the channel 20 is increased by the amount of the inclination, and the inspection area becomes larger. Since the inspection area becomes larger in the fine channel 20, which is on the order of nanometers to micrometers, it becomes easier to confirm the formation of the channel 120. This means that not only liquids but also materials such as conductive substances that fill the channel 20 become easier to see.

[0110] The above describes one example of a method for confirming the flow path 20. Similarly, dynamic observation using a fluorescence microscope can be performed on branched or intersecting flow paths 120, as in the third embodiment, to confirm the connection between the first flow path 121 and the second flow path 122.

[0111] <Information Processing Device> In the manufacturing method of the flow channel structure 100 in the first to third embodiments, the determination of the set load may be performed by an information processing device having a processor, main memory, auxiliary memory, etc. For example, a flow channel manufacturing apparatus that performs the flow channel manufacturing method of this embodiment may be equipped with a computer as an information processing device that calculates the corresponding set load when it receives input of the width W, depth D, and surface distance T' of the flow channels 20 and 120. The set load calculated by the computer may be input to the flow channel setting tool 1 that performs the flow channel setting process by wire or wireless. Alternatively, the flow channel setting tool 1 may be equipped with a computer that calculates the corresponding set load when it receives input of the width W of the flow channel 20, the depth D of the flow channels 20 and 120, and the surface distance T'.

[0112] <Variation> In the first to third embodiments, an example was described in which the starting point setting step is performed after the flow path setting step, but the configuration is not limited to this. For example, it has been confirmed that a flow path 20 similar to that in the above embodiments is formed even if the flow path setting step is performed after the starting point setting step. Alternatively, the starting point setting step may be performed in parallel with the flow path setting step.

[0113] Furthermore, the starting point setting process is not limited to the method exemplified in the first to third embodiments. Other methods can be used to apply physical energy to the substrate 10 in the starting point setting process. For example, in the first to third embodiments, physical energy is applied using a tool, but physical energy may be applied using a laser or the like instead of a tool as described in the above embodiments. For example, physical energy may be applied to the starting point 50 using a pulsed laser or the like, generating stress through rapid heating and cooling to propagate the crack. Even in this case, the laser only needs to be irradiated to the starting point, so manufacturing costs can be reduced compared to lithography technology, etc.

[0114] Furthermore, while the manufacturing method of the channel structure 100 in the second embodiment uses HF (hydrofluoric acid) or potassium hydroxide aqueous solution as the liquid introduced into the channel 20, it is not limited to these. Other liquid etching solutions may be used. Also, the liquid etching performed in the liquid introduction step may be ultrasonic etching with added ultrasound. Moreover, liquids other than chemical solutions, such as water, that do not cause chemical erosion may be used. In fact, the introduction of liquids such as water, acetone, and dimethylformamide into the channel 20 has been confirmed.

[0115] Furthermore, in the second embodiment, the number and location of the inlet ports 30 are not particularly limited. For example, the inlet ports 30 may be formed only at one end of the flow path 20 in the flow direction, as in the second embodiment, or they may be formed at both ends of the flow path 20 in the flow direction. Also, the size of the inlet ports 30 may be adjusted by chemical etching such as liquid etching.

[0116] Furthermore, in the third embodiment, the first flow path 121 and the second flow path 122 branch or intersect so as to be perpendicular to the X and Y directions, but the angle of intersection is not limited to an orthogonal angle.

[0117] Furthermore, the method for manufacturing the flow channel structure 100 of the third embodiment may further include the liquid introduction step described in the second embodiment.

[0118] Furthermore, while the first to third embodiments described the case where the crack is a median crack, the configuration is not limited to this. For example, in addition to the median crack, a lateral crack may also be formed.

[0119] Furthermore, it is possible to replace the components in the above embodiments with well-known components as appropriate, without departing from the spirit of the present invention, and the above-described modifications may be combined as appropriate. [Explanation of symbols]

[0120] 1. Flow channel structure 10 Base material 20, 20a, 120 flow paths 100 Flow channel structures 121 First channel 122 Second channel

Claims

1. A method for manufacturing a channel structure having a channel, A channel setting step involves applying a predetermined set load to the surface of a substrate that will become a channel structure, along the channel direction, which is the direction in which the channel to be formed extends. A starting point setting step involves applying physical energy from the outside to the inside of the substrate to the position that will be the starting point of the flow channel to be formed, Includes, The set load is determined based on at least one of the width, depth, and position of the flow path in the substrate of the flow path to be formed. By going through the aforementioned flow path setting step and the aforementioned starting point setting step, a crack extends from the starting point inside the substrate to form the flow path. A method for manufacturing a flow channel structure.

2. The aforementioned flow path setting step is, By scribing the surface of the substrate with a channel setting tool, the set load is applied to the substrate. The aforementioned starting point setting step is, Physical energy is applied to the substrate by scribing a position on the surface of the substrate corresponding to the starting point position in a direction intersecting the flow path direction using a starting point setting tool. A method for manufacturing a flow channel structure according to claim 1.

3. The process further includes a liquid introduction step of introducing liquid into the flow path formed by the flow path setting step and the starting point setting step, A method for manufacturing a flow channel structure according to claim 1.

4. In the liquid introduction step, an etching chemical is introduced into the flow path as the liquid, and liquid etching is performed for a certain period of time. A method for manufacturing a flow channel structure according to claim 3.

5. The aforementioned starting point setting step is, By performing a drilling process on the surface of the substrate at a position corresponding to the starting point, physical energy is applied to the substrate. In the aforementioned liquid introduction step, A method for manufacturing a flow channel structure according to claim 3, wherein the liquid is introduced into the flow channel through the injection port formed by the drilling process.

6. The flow path to be formed has a first flow path and a second flow path that branches off from or intersects with the first flow path. The aforementioned flow path setting step is, A first scribe step in which the set load is applied along the direction of the second flow path in which the second flow path extends, A second scribe step of applying the set load along the direction of the first flow path in which the first flow path extends, Includes, The aforementioned starting point setting step is, Physical energy is applied from the outside to the inside of the substrate to the starting point of the first channel, and physical energy is also applied from the outside to the inside of the substrate to the starting point of the second channel. A method for manufacturing a flow channel structure according to any one of claims 1 to 5.

7. The second scribe process is performed after the first scribe process. The set load in the second scribe step is equal to or greater than the set load in the first scribe step. A method for manufacturing a flow channel structure according to claim 6.

8. The aforementioned starting point setting step is, A first crack propagation step is performed in which physical energy is applied from the outside to the inside of the substrate to the starting point of the first channel, causing a crack to extend in the direction of the first channel within the substrate and thereby forming the first channel; After the first channel is formed by the first crack propagation step, a second crack propagation step is performed in which physical energy is applied from the outside to the inside of the substrate to the starting point of the second channel, causing a crack to propagate in the direction of the second channel within the substrate, thereby forming the second channel. including, A method for manufacturing a flow channel structure according to claim 6.

9. A flow channel structure manufactured by the manufacturing method described in any one of claims 1 to 5.

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