Display panel

Abstract

To provide electronic devices capable of diverse displays, or electronic devices capable of diverse operations. To provide. [Solution] A display panel comprising a flexible substrate, wherein the display panel is a first display It comprises a first display area, a second display area, and a third display area. The outline of the first display area is quadrilateral. It has the shape of and has a first side and a second side that form the first corner of the contour, and the second The display area is provided adjacent to the first side and parallel to the first side of the second display area. The width of the direction is the same as the length of the first side, and the third display area is provided adjacent to the second side, and Furthermore, the width of the third display area in the direction parallel to the second side is equal to the length of the second side. The substrate is The first corner has a notch in the region opposite to the first display area.

Description

[Technical Field]

[0001] The present invention relates to a product, method, or method of manufacture. Or, the present invention relates to a process, machine Relating to a manufacturer or composition of matter. In one aspect of the present invention, a light-emitting device, a display device, an electronic device, a lighting device, and a method for driving them, Or, the method for manufacturing them. In particular, for display panels (display devices) that can be displayed on curved surfaces. Related to; or electronic devices, light-emitting devices, lighting devices, equipped with display devices capable of displaying on curved surfaces. Or, regarding the methods for producing them. [Background technology]

[0002] In recent years, display devices have been expected to be applied to a variety of uses, and diversification is required. For example, For example, the thinning of smartphones and tablet devices equipped with touch panels as mobile information terminals. They are becoming more high-performance and multi-functional.

[0003] Furthermore, Patent Document 1 describes a film substrate on which a switching element such as a transistor and A flexible active-matrix light-emitting device equipped with an electroluminescent element is disclosed. . [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2003-174153 [Overview of the project] [Problems that the invention aims to solve]

[0005] One aspect of the present invention aims to provide a novel electronic device. Or, a variety of One object is to provide an electronic device capable of display. Or, one object is to provide an electronic device capable of various operations. Or, one object is to provide a display device (display panel) applicable to such an electronic device. Or, one object is to provide a novel display device. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like.

[0006] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Further, problems other than the above will be apparent from the description in the specification and the like, and it is possible to extract problems other than the above from the description in the specification and the like.

Means for Solving the Problems

[0007] One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner. One aspect of the present invention is a display panel including a flexible substrate, the display panel including a first display area, a second display area, and a third display area. The first display area has a quadrilateral contour, and has a first side and a second side forming the first corner of the contour. The second display area is provided adjacent to the first side, and the width in the direction parallel to the first side of the second display area matches the length of the first side. The third display area is provided adjacent to the second side, and the width in the direction parallel to the second side of the third display area matches the length of the second side. The substrate has a notch in a region facing the first display area across the first corner.

[0008] Further, the display panel preferably has a plurality of pixels, and each pixel preferably has a transistor including an oxide semiconductor in a semiconductor layer in which a channel is formed. Further, the display panel preferably has a plurality of pixels, and each pixel preferably has a transistor including an oxide semiconductor in a semiconductor layer in which a channel is formed.

[0009] In addition, the display panel has a plurality of pixels, and each pixel preferably has a transistor including polycrystalline silicon in a semiconductor layer in which a channel is formed.

[0010] In addition, it is preferable to further include a first driving circuit that outputs signals to the first display area and the second display area, and a second driving circuit that outputs signals to the third display area. The first driving circuit is provided along a side facing the first side of the second display area, and the second driving circuit is provided along a side in the extending direction of the first side of the third display area. It is preferable that the first driving circuit and the second driving circuit are electrically connected by wiring.

[0011] Alternatively, it is preferable to further include a driving circuit that outputs signals to the first display area, the second display area, and the third display area. The driving circuit is provided along a side facing the first side of the second display area, and it is preferable that the driving circuit and the third display area are electrically connected by wiring.

[0012] In addition, it is preferable to have a fourth display area provided in contact with the third side facing the first side of the first display area.

[0013] [[ID=�3]] In addition, it is preferable to have a fourth display area provided in contact with the third side facing the first side of the first display area and a fifth display area provided in contact with the fourth side facing the second side of the first display area.

[0014] Another aspect of the present invention is an electronic device including any of the above display panels and a housing. The housing has an upper surface, a back surface, a first side surface, a second side surface in contact with the first side surface, and a first side surface It has a surface shape that includes a third side facing the second side and a fourth side facing the second side. Each of the first and second sides has a continuous curved surface from the top to the back. The first display area of ​​the display panel is provided along the top surface, and the second display area is provided along the first side surface. Preferably, a third display area is provided along the second side surface.

[0015] Another aspect of the present invention is an electronic device comprising the above-mentioned display panel and housing, wherein the housing The body has a top surface, a back surface, a first side surface, a second side surface adjacent to the first side surface, and a side surface opposite to the first side surface. It has a surface shape having a third side and a fourth side facing the second side. The second and third sides each have a continuous curved surface from the top to the back. The first display area of ​​the display panel is provided along the top surface, and the second display area is provided along the first side surface. A third display area is provided along the second side surface, and a fourth display area is provided along the third side surface. It is preferable that it be provided along the side surface.

[0016] Another aspect of the present invention is an electronic device comprising the above-mentioned display panel and housing, The enclosure has a top surface, a back surface, a first side surface, a second side surface that is in contact with the first side surface, and a side surface that is opposite the first side surface. It has a surface shape having a third side and a fourth side facing the second side. Each of the faces, the second side, the third side, and the fourth side is continuous from the top to the back. It has a curved surface, and the first display area of ​​the display panel is provided along the top surface, and the second display area A third display area is provided along the first side, a third display area is provided along the second side, and a fourth A display area is provided along the third side, and a fifth display area is provided along the fourth side. It is preferable to do so.

[0017] Furthermore, in any of the above electronic devices, a touch sensor is placed in a position that overlaps with the display panel. To address this, the touch sensor has a first side, a second side, a third side and a fourth side. At the very least, it is preferable that it be provided along the top surface.

[0018] In this specification, a connector, for example, FPC (F) is used for the display panel (display device). (lexible printed circuit) or TCP (Tape Car A module with a rier package attached, and a printed circuit board at the end of the TCP. A module equipped with COG (Chip On) or a substrate on which display elements are formed. Modules in which ICs (integrated circuits) are directly mounted using the glass method include a display device. There are cases where this is the case. [Effects of the Invention]

[0019] According to one aspect of the present invention, a novel electronic device can be provided, or a device capable of displaying a variety of information. We can provide electronic devices. Or, we can provide electronic devices that can be operated in various ways. Or this We can provide a display device applicable to such electronic devices, or we can provide a novel display device. ru.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings It is possible to extract effects other than those mentioned above from the descriptions in the surfaces, claims, etc. [Brief explanation of the drawing]

[0021] [Figure 1] An example of the configuration of an electronic device according to an embodiment. [Figure 2] An example of the configuration of an electronic device according to an embodiment. [Figure 3] An example of the configuration of an electronic device according to an embodiment. [Figure 4] An example of the configuration of an electronic device according to an embodiment. [Figure 5] An example of the configuration of an electronic device according to an embodiment. [Figure 6] An example of the configuration of a display panel according to an embodiment. [Figure 7] An example of the configuration of a display panel according to an embodiment. [Figure 8] An example configuration of a display panel and a touch sensor according to an embodiment. [Figure 9] An example of the configuration of a display panel according to an embodiment. [Figure 10] An example of the configuration of a display panel according to an embodiment. [Figure 11] An example of the configuration of a display panel according to an embodiment. [Figure 12] High-resolution TEM image with Cs correction in cross-section of CAAC-OS, and schematic cross-sectional diagram of CAAC-OS. [Figure 13] High-resolution TEM image with Cs correction in the plane of CAAC-OS. [Figure 14] A diagram illustrating the XRD structural analysis of CAAC-OS and single-crystal oxide semiconductors. [Figure 15] A figure showing the electron diffraction pattern of CAAC-OS. [Figure 16] A diagram showing the changes in the crystalline structure of In-Ga-Zn oxide due to electron irradiation. [Figure 17] An example of the configuration of an electronic device according to an embodiment. [Figure 18] An example of the configuration of an electronic device according to an embodiment. [Figure 19] An example of the configuration of an electronic device according to an embodiment. [Figure 20] An example of the configuration of an electronic device according to an embodiment. [Figure 21]An example of the configuration of an electronic device according to an embodiment. [Modes for carrying out the invention]

[0022] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0023] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0024] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0025] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0026] (Embodiment 1) In this embodiment, an electronic device according to one aspect of the present invention and a display panel applicable to said electronic device The display device (also called a "display device") will be explained with reference to the drawings.

[0027] [Electronic device toy] Figure 1(A) is a schematic perspective view showing the top side of the electronic device exemplified below, and Figure 1(B) is This is a schematic perspective view showing the reverse side.

[0028] The electronic device shown in Figure 1 consists of a housing 101 and a display panel 11 provided on the surface of the housing 101. It contains 0.

[0029] The enclosure 101 has a top surface, a back surface, a first side surface, a second side surface in contact with the first side surface, and a first side surface. It has a surface shape that includes a third side facing the second side and a fourth side facing the second side.

[0030] The display panel 110 has a first display area 111 that overlaps with the top surface of the housing 101, and the housing 101 A second display area 112 overlapping with one of the sides, and a third overlapping with another of the sides of the casing 101 It has a display area 113. Here, the surface of the housing 101 that overlaps with the second display area 112 is the first The side of the housing 101 that overlaps with the third display area 113 is defined as the second side.

[0031] On all four sides of the housing 101, at least the area overlapping with the display panel 110 is curved. It is preferable that it has a shape. For example, it may have corners between the top surface and the side surface, and between the side surface and the back surface. Furthermore, it is preferable that these surfaces are continuous. Also, the shape of the side is the upper part of the housing 101. It is preferable to have a curved surface such that the slope of the tangent line is continuous from the front surface to the back surface. It is preferable that the shape of the side surface has a developable surface obtained by deforming the plane without stretching or contracting it. It seems so.

[0032] As shown in Figure 1, the second display area 112 is provided along the first side surface of the housing 101. Furthermore, it may be provided extending to the back surface of the housing 101. 3 is provided along the second side of the housing 101 and extends to the back surface of the housing 101. It may be done as shown in Figures 17(A) and 17(B). Figure 17 (A) is a schematic perspective view showing the top side of the electronic device, and Figure 17(B) is a perspective view showing the back side. This is a schematic diagram. Alternatively, it may be as shown in Figures 18(A) and 18(B). Figure 18(A Figure 18(B) is a schematic perspective view showing the top side of the electronic device, while Figure 18(B) is a schematic perspective view showing the back side. This is a diagram.

[0033] In addition to the display panel 110, the surface of the housing 101 also has hardware buttons and external connection ports. It may have terminals, etc.

[0034] Note that Figure 1 shows the case where the two sides of the housing 101 are used as display areas, but other A configuration in which the display area is superimposed on the side is also possible.

[0035] Figures 2(A1) and (A2) show the third side of the housing 101 that overlaps with the first side facing the third side. This shows a configuration with 4 display areas 114. Also, Figures 2(B1) and (B2) show this In addition, a fifth display area 115 overlaps the fourth side facing the second side of the housing 101. This shows the configuration that is provided. Alternatively, it may be as shown in Figures 19(A1) and 19(A2). Figure 19(A1) is a schematic perspective view showing the top side of the electronic device, and Figure 19(A2) is the back side. This is a schematic perspective view showing the side surface. Alternatively, as shown in Figures 19(B1) and 19(B2) This is also acceptable. Figure 19(B1) is a schematic perspective view showing the top side of the electronic device, and Figure 19(B2) This is a schematic perspective view showing the reverse side. Alternatively, as shown in Figures 20(A1) and 20(A2) It is also permissible. Figure 20(A1) is a schematic perspective view showing the top side of the electronic device, and Figure 20(A 2) is a schematic perspective view showing the reverse side. Alternatively, as shown in Figures 20(B1) and 20(B2) This is also acceptable. Figure 20(B1) is a schematic perspective view showing the top side of the electronic device, and Figure 20 (B2) is a schematic perspective view showing the reverse side.

[0036] Furthermore, Figures 3(A1) and 3(A2) show a second display that overlaps the first side surface of the housing 101. It comprises a region 112 and a fourth display region 114 that overlaps with the third side facing the first side. The configuration is shown. Also, Figures 3(B1) and 3(B2) show the second side of the housing 101. This shows a configuration that includes only the overlapping third display area 113. Alternatively, see Figure 21(A1) and Alternatively, it may be done as shown in Figure 21(A2). Figure 21(A1) is a perspective view showing the top side of the electronic device. This is a schematic diagram, and Figure 21(A2) is a perspective schematic diagram showing the reverse side. Alternatively, Figure 21(B1 ) and Figure 21(B2) may also be used. Figure 21(B1) shows the top side of the electronic device. This is a schematic perspective view, and Figure 21(B2) is a schematic perspective view showing the back side.

[0037] This configuration allows the surface to be displayed only on the surface parallel to the top surface of the housing, unlike conventional electronic devices. Instead of just showing the side, it becomes possible to display on the surface parallel to the side of the enclosure. In particular, the enclosure Providing display areas along two or more sides is preferable because it increases the diversity of the display.

[0038] A first display area 111 is arranged along the top surface of the housing 101, and a second display area is arranged along the side. Each of these display areas may be used as an independent display area to display different images or other content. Alternatively, a single image or other element may be displayed across two or more display areas. For example, a housing The image to be displayed in the first display area 111, which is positioned along the top surface of 101, is displayed on the housing 101. It may also be displayed continuously in a second display area 112 or the like, which is provided along the side.

[0039] Figure 4 shows examples of the usage status of the electronic devices shown in Figures 2(A1) and (A2). In Figure 4, The first display area 111, which is provided along the top surface of the housing 101, contains text information 122 and app information. Displaying multiple icons 121 associated with applications, etc. (Case 101) The second display area 112, which is provided along the first side, is related to applications, etc. It displays the attached icons 1, 2, 3, etc.

[0040] Furthermore, as shown in Figure 4, multiple display areas are provided along the side of the housing 101 (here Then, across the third display area 113 and the second display area 112), the character information 124 etc. It can also be displayed in a flowing (moving) manner. This can be done across two or more sides of the enclosure. By displaying information, users can access information regardless of the orientation of their electronic devices, for example, when receiving an incoming call. This can prevent you from missing something.

[0041] Furthermore, for example, when a phone call is received or an email is received, not only the first display area 111 but also... In the display area provided along the side of the second display area 112, etc., sender information (for example, The system may also display the believer's name, phone number, email address, etc. In Figure 4, When a message is received, the caller information is displayed in the second display area 112 and the third display area 113. This shows an example of how it might be displayed.

[0042] Furthermore, Figures 5(A) and (B) show examples of usage conditions for electronic devices different from those described above. Figure 5(A In this case, multiple icons 121 are displayed in the first display area 111, and the second display area 11 Slide bar 125 is displayed in 2. Touch slide bar 125 with finger 126, etc. By moving the slider bar up and down, the first display area 11 can be changed as shown in Figure 5(B). The displayed content, such as icons 121, shown in 1, slides up and down accordingly. (Figure 5) In (A) and (B), the slide bar 125 is slid downward by the finger 126, Multiple images, such as icons 121, span from the first display area 111 to the third display area 113. This shows it sliding upwards.

[0043] Note that this example shows the case where the image displayed in the first display area 111 is an icon. However, this is not the only example; depending on the application being launched, it may also include document information, images, videos, etc. Various information can be displayed by sliding. Also, the slide bar 125 is the second Not only the display area 112, but also the first display area 111, the third display area 113, or the fourth It can also be placed in the display area 114, etc.

[0044] Furthermore, during standby time when electronic devices are not in use, the upper surface of the housing 101 is provided. The display of the first display area 111 is turned off (for example, black display), and the second display area provided along the side Information may be displayed only in the display area 112, etc. By not displaying in display area 111, power consumption during standby is reduced. It is possible.

[0045] Additionally, touch is enabled in areas that overlap with the display panel 110, specifically in areas that overlap with each display area. It is preferable to have a sensor. As a touch sensor, a sheet-shaped capacitive type is preferable. The touch sensor can be mounted on top of the display panel 110. Alternatively, the display panel The 110 itself uses a so-called in-cell type touch panel with built-in touch sensor functionality. This is also good. As an in-cell type touch panel, a capacitive touch sensor can be applied. Alternatively, an optical touch sensor using a photoelectric conversion element may be applied.

[0046] For example, in the configuration shown in Figure 4, the first display area 111, the second display area 112, and the third A combination of touch operations for each of the display area 113 and the fourth display area 114 It is preferable to associate the application's behavior with the system's operation.

[0047] As an example, in the second display area 112, the third display area 113, and the fourth display area 114 The table below shows examples of how combinations of touch operations relate to application behavior. For example, if you touch all three display areas, the power will be turned ON or OFF. This is done. Also, touch operations are performed simultaneously on the second display area 112 and the fourth display area 114. If this happens, the email-related application will launch and simultaneously display the email content. Also, touch operations can be performed simultaneously on the second display area 112 and the third display area 113. If this occurs, the application for making a phone call will launch. Also, the third display area If touch operations are performed simultaneously on 113 and the fourth display area 114, the browser will launch. To move.

[0048] [Table 1]

[0049] Note that the above-mentioned association between touch operations and applications is just one example, and the operation Developers of shaping systems and application software, as well as users, prefer that settings be configurable as needed. It's nice.

[0050] Alternatively, while touching the first display area 111, any of the second to fourth display areas Touching one or more buttons will trigger the actions of each respective application. This helps to prevent unintended actions from being performed.

[0051] In this way, the combination of touch actions in multiple areas is related to the operation of the application. By attaching it, intuitive operation is possible, resulting in a user-friendly human interface. It can achieve a face.

[0052] An electronic device according to one aspect of the present invention displays along two or more sides, not just the top surface of the housing. This makes it possible to display a wider variety of information compared to conventional electronic devices. Furthermore, by providing touch sensors in each display area, a wider range of operations can be performed compared to conventional electronic devices. This makes it possible to create electronic devices that are more intuitive to operate.

[0053] Here, we have shown examples of how to display various information using the display panel 110. The present invention is not limited to this aspect. For example, depending on the circumstances, Therefore, it is also acceptable to not display the information. For example, instead of the display panel 110, It can also be used as a lighting device. By applying it to a lighting device, it can create an interior with excellent design. It can be used as a terrier. Or, as lighting that can illuminate in various directions. It can be used in this way. Alternatively, instead of the display panel 110, a backlight or floor It can also be used as a light source, such as a headlight. In other words, it can be used as part of a display panel. It can also be used as a lighting device for a lamp.

[0054] [Example of display panel configuration] Next, an example of the configuration of a display panel that can be applied to an electronic device according to one aspect of the present invention is presented. I will explain this by referring to the drawings.

[0055] Figure 6(A) is a schematic top view of the display panel 110, which is illustrated below. Display panel 11 0 comprises a flexible substrate 102 and has a plurality of pixels formed on the substrate 102. The display panel 110 has a first display area 111, a second display area 112, and a third display area 1 It has 13 and a fourth display area 114. For clarity, here, each display area The hatching patterns are used to clearly indicate the difference.

[0056] The first display area 111 has a quadrilateral shape for its outline. The second display area 112 is , set adjacent to one of the four sides (first side 131) that form the outline of the first display area 111 The first side 13 of the first display area 111 and the second display area 112 The widths in the direction parallel to 1 are preferably the same. The third display area 113 is above It is provided adjacent to the second side 132 which is adjacent to the first side 131. First display area 11 It is preferable that the widths of the first and third display areas 113 in the direction parallel to the second side 132 are the same. Also, at the corner formed by the first side 131 and the second side 132 (the first corner), the second side One corner of the display area 112 coincides with one corner of the third display area 113. It is preferable that they be present.

[0057] Also, as shown in Figure 6(A), the first angle formed by the first side 131 and the second side 132 In the region opposite the first display area 111 across the section, the substrate 102 has a notch 138 It has a notch 138 in this way, and It becomes possible to curve the third display area 113 in different directions.

[0058] Furthermore, in Figure 6(A), the fourth side is tangent to the third side 133, which is opposite the first side 131. This shows a configuration that provides a display area 114. One of the corners of the fourth display area 114 is the second It is preferable that it coincides with the second corner formed by side 132 and the third side 133. In the region opposite the first display area 111 across the section, the substrate 102 has the above-mentioned notch It has a notch similar to that of 138. With this configuration, the fourth display area 114 It can be curved in a direction different from that of the third display area 113.

[0059] Furthermore, a portion of the substrate 102 is equipped with an FPC 10 that supplies signals and power for driving pixels. It includes 3. In Figure 6(A), IC104 is mounted on FPC103 by the COF method. The configuration shown includes the IC104, but it does not need to be included if it is not required, and the board 10 Alternatively, IC104 may be directly mounted on 2 using the COF method. Here, FPC1 It is preferable that the width of 03 is smaller than the width of the first display area 111. Therefore, the second display area 112 and the fourth display area 114 are curved, and the first display area When region 111 is used in a planar shape, the joint between FPC 103 and substrate 102 is curved. This prevents the FPC103 from peeling off without causing any damage.

[0060] Figure 6(B) is a top schematic view of an enlarged area A in Figure 6(A).

[0061] In the configuration shown in Figure 6(B), the first display area 111 and the second display area 112 are The first drive circuit 141 outputs a signal for driving the pixels included in these, and the It has a second drive circuit 142 that outputs a similar signal to the display area 113 of the first The drive circuit 141 is provided along the side of the second display area 112 opposite the first side 131. Furthermore, the second drive circuit 142 is located on the first side 131 of the third display area 113. It is provided along the side in the extension direction. Also, the first drive circuit 141 and the second drive circuit 1 42 is electrically connected by wiring 145 and receives input from FPC103 via wiring 145. The resulting signal can be supplied to the second drive circuit 142.

[0062] Furthermore, Figure 6(C) shows a configuration different from the one shown in Figure 6(B). In the configuration shown above, the first drive circuit 141 is replaced with a drive circuit 143. The path 143 drives the pixels included in the first display area 111 and the second display area 112. It outputs a signal for that purpose, and also drives the pixels included in the third display area 113. The signal can be output. The signal output from the drive circuit 143 is transmitted via the wiring 146. Then, output to the wiring that is electrically connected to each pixel in the third display area 113. It is possible.

[0063] The first drive circuit 141, the second drive circuit 142, and the drive circuit 143 are, for example, gates A circuit that functions as either a drive circuit or a source drive circuit can be used. Therefore, it is preferable to apply a gate drive circuit. In that case, IC104 is a source drive circuit and It is preferable that it has the function of being.

[0064] In this case, the display panel is a so-called driver-integrated type, with a drive circuit mounted on the circuit board 102. Although the above configuration is shown, a configuration without a drive circuit is also acceptable.

[0065] Thus, the third output outputs a signal for driving the pixels included in the third display area 113. The second drive circuit 142, or the wiring 146 that supplies a signal for driving the pixel, By providing it along one side of the display area 113 of 3, the area of ​​the notch 138 can be increased. This makes it possible to reduce the area of ​​the non-display portion relative to the surface area of ​​the display panel 110. Also, when the third display area 113 is curved as shown in Figure 5, as shown in Figure 6(C) It is preferable to have a configuration in which no drive circuit is provided in the curved section. The electrical properties of semiconductor devices such as transistors may change due to the stress. Therefore, this configuration can cause the output signal from the drive circuit to become unstable. This can be avoided.

[0066] Note that Figure 6 shows a configuration with the first to fourth display areas, but the first to third The configuration may include a display area, or it may include a fifth display area 115. This is possible. Figure 7(A) shows a schematic top view of the case where there is a fifth display area 115. The wiring and drive circuit configuration between the fifth display area 115 and the second display area 112 are shown in Figure 1. A configuration similar to that shown in 6(B) or Figure 6(C) may be used.

[0067] Figure 7(B) also shows an example of a configuration in which FPC103a is provided. FPC103a is For example, it has the function of supplying signals and power to each of the drive circuits exemplified above. If Nell 110 does not have a drive circuit, the IC is mounted on FPC103a using a COF method or similar. You may do so.

[0068] Here, the pixels provided in each display area of ​​the display panel 110 and the driving circuits used in each are It is preferable to apply oxide semiconductors to semiconductor devices such as transistors. It is preferable to use an oxide semiconductor with a larger band gap than silicon. If a semiconductor material with a wider band gap and lower carrier density than CON is used, This is preferable because it reduces the current when the transistor is off.

[0069] For example, the above oxide semiconductor may contain at least indium (In) or zinc (Zn). Preferably contains ). More preferably In-M-Zn oxide (where M is Al, Ti, Contains oxides represented by metals such as Ga, Ge, Y, Zr, Sn, La, Ce, or Hf. nothing.

[0070] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. , or oriented perpendicular to the upper surface of the semiconductor layer, and without grain boundaries between adjacent crystal portions. It is preferable to use an oxide semiconductor film.

[0071] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor film due to stress. Therefore, Such oxide semiconductors are suitable for use in flexible, curved display panels and the like. It is possible to be there.

[0072] By using such materials as semiconductor layers, fluctuations in electrical properties are suppressed, and reliability is improved. High transistors can be achieved.

[0073] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it over time. By applying such transistors to pixels, each It also becomes possible to stop the drive circuit while maintaining the gradation of the image displayed in the display area. As a result, it is possible to create electronic devices with extremely reduced power consumption.

[0074] Furthermore, regarding preferred forms of oxide semiconductors applicable to semiconductor layers and methods for forming them, This will be explained in detail in later embodiments.

[0075] Furthermore, the pixels in each display area of ​​the display panel 110 and the drives used in each drive circuit Polycrystalline semiconductors may be used in semiconductor devices such as transistors. For example, polycrystalline semiconductors It is preferable to use materials such as polycrystalline silicon. Polycrystalline silicon can be molded at lower temperatures compared to single-crystal silicon. It can be manufactured and possesses higher field-effect mobility and higher reliability compared to amorphous silicon. By applying such polycrystalline semiconductors to pixels, the aperture ratio of the pixels can be improved. Furthermore, even when pixels have extremely high resolution, the gate drive circuit and source drive circuit This makes it possible to form pixels on the same substrate, reducing the number of components that make up electronic devices. It is possible.

[0076] Here is an example of a case where a sheet-like touch sensor is placed on top of the display panel 110. Let's explain using Figure 8.

[0077] Figure 8(A) shows a state in which a portion of the display panel 110 equipped with the FPC 103 is curved. Figure 8(B) shows the sheet-like touch sensor 105 on the curved surface of the display panel 110. This shows a state of being curved along the curve. The touch sensor 105 is provided with FPC 106. It is.

[0078] Figure 8(C) shows an example of the display panel 110 and touch sensor 105 stacked on top of each other. At this time, as shown in Figure 8(C), the FPC 103 provided on the display panel 110 and It is preferable to position the FPC 106 provided on the touch sensor 105 so that it does not overlap with it. Therefore, instead of making the shape of the display panel 110 and the touch sensor 105 the same, In the area where FPC103 or FPC106 is attached, the display panel 110 and touch sensor It is preferable to make these shapes different so that they do not overlap with Sa105.

[0079] In this way, the display panel 110 and the sheet-shaped touch sensor 105 are stacked on top of each other, By incorporating it into the interior of the casing 101, not only the top surface of the casing but also parts of the sides and back surface can be accessed. It will also be possible to add touch functionality to it.

[0080] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0081] (Embodiment 2) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 9.

[0082] Figure 9(A) illustrates the structure of a touch panel applicable to an electronic device according to one aspect of the present invention. This is a view drawing.

[0083] Figure 9(B) is a cross-sectional view along cutting lines AB and CD in Figure 9(A).

[0084] Figure 9(C) is a cross-sectional view of Figure 9(A) along the cutting line EF.

[0085] <Explanation of the top view> The touch panel 300 illustrated in this embodiment has a display unit 301 (see Figure 9(A)). ).

[0086] The display unit 301 includes multiple pixels 302 and multiple imaging pixels 308. This allows for the detection of fingers or other objects touching the display unit 301. This enables the use of the imaging pixels 308. This allows you to configure a touch sensor.

[0087] Pixel 302 comprises multiple sub-pixels (e.g., sub-pixel 302R), and the sub-pixels are light-emitting elements. It is equipped with a pixel circuit that can supply power to drive the light-emitting elements.

[0088] The pixel circuit can supply selection signals and image signals. The wiring is connected electrically.

[0089] Furthermore, the touch panel 300 is a scan line drive that can supply selection signals to the pixels 302. Circuit 303g(1) and an image signal line drive circuit that can supply an image signal to the pixel 302. It is equipped with road 303s(1).

[0090] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0091] The imaging pixel circuit has wiring and power supply potential that can supply control signals. It is electrically connected to the wiring that allows it to function.

[0092] One example of a control signal is selecting the imaging pixel circuit that reads out the recorded imaging signal. A signal that can be generated, a signal that can initialize the imaging pixel circuit, and a signal that the imaging pixel circuit can emit light Examples include signals that allow for the determination of the detection time.

[0093] The touch panel 300 can supply control signals to the image pixel 308 as an image pixel drive. It comprises circuit 303g(2) and imaging signal line driving circuit 303s(2) for reading out the imaging signal. .

[0094] <Explanation of the cross-section> The touch panel 300 has a substrate 310 and a counter substrate 370 facing the substrate 310. (See Figure 9(B)).

[0095] The substrate 310 is a flexible substrate 310b, preventing the unintended diffusion of impurities to the light-emitting element. A protective barrier film 310a and an adhesive layer 31 for bonding the substrate 310b to the barrier film 310a. It is a laminate made up of layers of 0c.

[0096] The opposing substrate 370 is a flexible substrate 370b, which prevents unintended impurities from spreading to the light-emitting element. A barrier film 370a to prevent scattering and an adhesive layer to bond the substrate 370b and the barrier film 370a. It is a laminate of 370c (see Figure 9(B)).

[0097] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. It has a refractive index higher than air and also serves as an optical junction layer. Pixel circuits and light-emitting elements (for example) The light-emitting element (luminescent element 350R) is located between the substrate 310 and the opposing substrate 370.

[0098] Pixel composition Pixel 302 has sub-pixels 302R, 302G, and 302B (Figure 9) (See (C)). In addition, sub-pixel 302R is equipped with light-emitting module 380R, and sub-pixel 302G The main pixel is equipped with a light-emitting module 380G, and the sub-pixel 302B is equipped with a light-emitting module 380B.

[0099] For example, sub-pixel 302R supplies power to light-emitting element 350R and light-emitting element 350R. It includes a pixel circuit containing transistor 302t which can perform (see Figure 9(B)). The light-emitting module 380R consists of a light-emitting element 350R and an optical element (e.g., a colored layer 367R). Prepare.

[0100] The light-emitting element 350R consists of a lower electrode 351R, an upper electrode 352, and the lower electrode 351R and the upper electrode The electrode has a layer 353 containing a luminescent organic compound between the poles 352 (see Figure 9(C)).

[0101] The layer 353 containing a luminescent organic compound includes luminescent unit 353a and luminescent unit 353b. The system also includes an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.

[0102] The light-emitting module 380R has a colored layer 367R on the opposing substrate 370. The colored layer is specific Any material that transmits light having a certain wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. Alternatively, the light emitted by the light-emitting element can be left as is. A transparent area may also be provided.

[0103] For example, the light-emitting module 380R is in contact with the light-emitting element 350R and the colored layer 367R. It has a material of 360.

[0104] The colored layer 367R is located in a position that overlaps with the light-emitting element 350R. As a result, the light-emitting element 350 A portion of the light emitted by R passes through the sealing material 360 and the colored layer 367R, which also serve as the optical bonding layer. Then, as shown by the arrow in the diagram, it is emitted to the outside of the light-emitting module 380R.

[0105] Although an example using a light-emitting element as the display element is shown here, the present invention is also described in detail below. The embodiments are not limited to these.

[0106] For example, in this specification, etc., display element, display device having a display element, light emission Light-emitting devices, which are devices having elements and light-emitting elements, can take various forms or various shapes. It can have such elements. Examples of display elements, display devices, light-emitting elements, or light-emitting devices include EL (electroluminescent) elements (EL elements including organic and inorganic materials, organic E L elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) (,), transistor (a transistor that emits light in response to current), electron emission element, liquid crystal element, Electronic ink, electrophoretic elements, grating light bulbs (GLV), plasma displays Ray (PDP), MEMS (Micro-Electro-Mechanical Systems), Digital Micromirror devices (DMD), DMS (Digital Microshutter), MI RASOL®, IMOD (Interference Modulation) element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays where contrast, brightness, reflectance, transmittance, etc., change due to electromagnetic effects. Some have a medium. An example of a display device using an EL element is an EL display. Examples include field emission devices. A flat-panel display (FED) or SED (Surface-C) display (SED: Surface-C Examples include (onduction electron-emitter display). An example of a display device using liquid crystal elements is a liquid crystal display (transmissive liquid crystal display). I. Semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection Examples include (ejection-type liquid crystal displays). One type of display device that uses electronic ink or electrophoretic elements. Examples include electronic paper.

[0107] 《Touch Panel Configuration》 The touch panel 300 has a light-shielding layer 367BM on the opposing substrate 370. M is provided so as to surround the colored layer (for example, colored layer 367R).

[0108] The touch panel 300 is equipped with an anti-reflective layer 367p in a position that overlaps the display unit 301. For example, a circular polarizing plate can be used as the anti-radiation layer 367p.

[0109] The touch panel 300 includes an insulating film 321. The insulating film 321 is connected to a transistor 302t It covers the pixel circuit. The insulating film 321 is a layer for flattening the irregularities caused by the pixel circuit. It can be used in this way. In addition, it suppresses the diffusion of impurities into transistors such as transistor 302t. An insulating film having layers that can produce this can be applied to the insulating film 321.

[0110] The touch panel 300 has light-emitting elements (e.g., light-emitting elements 350R) on an insulating film 321. ru.

[0111] The touch panel 300 has a partition wall 328 that overlaps the end of the lower electrode 351R on the insulating film 321. It has (see Figure 9(C)). Also, the space that controls the distance between substrate 310 and opposing substrate 370 - The 329 is located on the partition wall 328.

[0112] 《Configuration of the image signal line driving circuit》 The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. The drive circuit can be formed on the same substrate using the same process as the pixel circuit. Figure 9 As shown in (B), transistor 303t has a second gate on the insulating film 321. Alternatively, the second gate may be electrically connected to the gate of transistor 303t. And different potentials may be applied to these. Also, if necessary, a second gate It may also be provided on transistor 308t, transistor 302t, etc.

[0113] 《Configuration of imaging pixels》 The imaging pixel 308 is a photoelectric conversion element 308p and light irradiated onto the photoelectric conversion element 308p. It is equipped with an imaging pixel circuit for detecting [something]. The imaging pixel circuit also includes a transistor 308t Includes.

[0114] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0115] Other configurations The touch panel 300 is equipped with wiring 311 that can supply signals, and terminal 319 is It is provided in wiring 311. Furthermore, it is used to supply signals such as image signals and synchronization signals. The FPC309(1) is electrically connected to terminal 319.

[0116] Note that a printed circuit board (PWB) may be attached to FPC309(1). stomach.

[0117] Transistors formed in the same process are referred to as transistor 302t, transistor 303, and It can be applied to transistors such as the 308t transistor.

[0118] Transistors have structures such as bottom gate type and top gate type. An engine can be applied.

[0119] In addition to the gate, source, and drain of transistors, various components that make up a touch panel are also included. Materials that can be used for wires and electrodes include aluminum, titanium, chromium, and nickel. Kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten A single metal consisting of n, or an alloy with n as the main component, is used as a single-layer or laminated structure. Yes, for example, a single-layer structure of an aluminum film containing silicon, or an aluminum film on a titanium film. A two-layer structure with stacked layers, a two-layer structure with an aluminum film stacked on a tungsten film, copper-magnesium A two-layer structure in which a copper film is laminated on a nesium-aluminum alloy film, and a copper film is laminated on a titanium film. A two-layer structure, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film Then, an aluminum film or a copper film is laminated on top of the titanium film or titanium nitride film, Furthermore, a three-layer structure is formed by forming a titanium film or titanium nitride film on top of it, or a molybdenum film or nitride film. A molybdenum film and an aluminum film layered on top of the molybdenum film or molybdenum nitride film. Alternatively, a copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of it, creating a three-layer structure. It has a structure, etc. Furthermore, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide is used. This may also be done. Furthermore, using copper containing manganese improves the controllability of the shape through etching. Therefore, it is preferable.

[0120] Transistors such as transistor 302t, transistor 303t, transistor 308t It is preferable to apply the above-mentioned oxide semiconductor to the semiconductor in which the channel is formed. Preferred forms of the ionized semiconductor will be described in detail in later embodiments.

[0121] Also, transistors such as transistor 302t, transistor 303t, transistor 308t, etc. Silicon may be used as the semiconductor in which the channel of the transistor is formed. Morphic silicon may be used, but crystalline silicon is particularly preferred. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, or monocrystalline silicon. In particular, polycrystalline silicon can be formed at lower temperatures than single-crystal silicon, and amorphous silicon Compared to fast silicon, it has higher field-effect mobility and higher reliability. By applying a conductor to the pixel, the aperture ratio of the pixel can be improved. Furthermore, extremely high resolution... Even if pixels are present, the gate drive circuit and source drive circuit are placed on the same substrate as the pixels. This makes it possible to form the necessary components, thereby reducing the number of parts that make up electronic devices.

[0122] Here, we will describe a method for forming a flexible light-emitting panel.

[0123] For convenience, this definition includes a configuration that includes pixels and driving circuits, or optical components such as color filters. The configuration will be called the element layer. The element layer includes, for example, a display element, and in addition to the display element, a display It includes wiring that electrically connects to the elements, and elements such as transistors used in pixels and circuits. That's good too.

[0124] In this context, the support having an insulating surface on which the element layer is formed is referred to as the substrate. Let's assume that.

[0125] A method for forming an element layer on a substrate having a flexible insulating surface is to directly place the element layer on the substrate. A method for forming a contact element layer, and a method for forming an element layer on a support substrate having a different rigidity from the base material. Another method involves separating the element layer from the support substrate and transferring the element layer onto the substrate.

[0126] If the material constituting the base material has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the element fixed to the support substrate, transport within and between devices becomes easier. It is preferable because it makes things easier.

[0127] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to the substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and element layer are separated and transferred to the substrate. At this time, the interface between the support substrate and the peeled layer, and the peeled layer and the insulating layer You should select a material that will cause delamination at the interface of the marginal layer or within the delamination layer.

[0128] For example, a layer containing a high-melting-point metal material such as tungsten as a release layer, and oxidation of the said metal material Layers containing materials are stacked, and multiple layers of silicon nitride or silicon oxynitride are stacked on top of the release layer. It is preferable to use a high melting point metal material. Using a high melting point metal material increases the degree of freedom in the device layer formation process. Therefore, it is desirable.

[0129] Delamination can be achieved by applying mechanical force, etching the delamination layer, or by using the delamination interface. Peeling may be performed by dropping a liquid onto a part and allowing it to penetrate the entire peeling interface, etc. Also or, peeling may be performed by applying heat to the peeling interface using the difference in thermal expansion.

[0130] Also, when peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be provided. For example, using glass as the support substrate and an organic resin such as polyimide as the insulating layer , a starting point for peeling may be formed by locally heating a part of the organic resin using laser light or the like , and peeling may be performed at the interface between the glass and the insulating layer. Or, a metal layer is provided between the support substrate and the insulating layer made of an organic resin, and the metal layer is heated by passing an electric current through the metal layer thereby, peeling may be performed at the interface between the metal layer and the insulating layer. At this time, the insulating layer made of an organic resin can be used as a substrate.

[0131] Examples of the flexible substrate include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, etc. In particular, it is preferable to use a material with a low coefficient of thermal expansion. For example, polyamideimide resin, polyimide resin, PET, etc. with a coefficient of thermal expansion of 30×10 [[ID=·25]] / K or less can be preferably used. Also, a substrate in which a resin is impregnated in a fibrous body (also referred to as a prepreg) or a substrate in which an inorganic filler is mixed in an organic resin to lower the coefficient of thermal expansion can also be used. -6

[0132] When the fibrous body is included in the above material, the fibrous body uses high-strength fibers of organic compounds or inorganic compounds. Specifically, high-strength fibers refer to fibers with a high tensile elastic modulus or Young's modulus. Typical examples include polyvinyl alcohol-based fibers, polyester-based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include glass fibers using E glass, S glass, D glass, Q glass, etc. These can be used in the form of woven fabrics or non-woven fabrics, and a structure in which this fibrous body is impregnated with resin and the resin is cured can be used as a flexible substrate. As a flexible substrate, using a structure composed of a fibrous body and resin is preferable because the reliability against breakage due to bending or local pressing is improved.

[0133] Note that the display device according to one aspect of the present invention can use an active matrix method having an active element in a pixel, or a passive matrix method having no active element in a pixel.

[0134] In the active matrix method, as active elements (active elements, non-linear elements), not only transistors but also various active elements (active elements, non-linear elements) can be used. For example, MIM (Metal Insulator Metal), or T FD (Thin Film Diode), etc. can also be used. Since these elements have fewer manufacturing steps, it is possible to reduce manufacturing costs or improve yields. Or, since these elements have a small element size, it is possible to improve the aperture ratio and achieve low power consumption and high brightness.

[0135] Other than the active matrix method, there are active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements. By not using (nonlinear elements), the number of manufacturing steps is reduced, thus lowering manufacturing costs. This can improve yield. Alternatively, active elements (active components, nonlinear elements) By not using ), the aperture ratio can be improved, resulting in lower power consumption or higher brightness, etc. It is possible to measure this.

[0136] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0137] (Embodiment 3) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 10.

[0138] Figure 10 is a cross-sectional view of the touch panel 500.

[0139] The touch panel 500 includes a display unit 501 and a touch sensor 595. The Nel 500 has substrates 510, 570 and 590. Note that substrate 510, Both substrate 570 and substrate 590 are flexible.

[0140] The display unit 501 consists of a substrate 510, a plurality of pixels on the substrate 510, and a signal supply to those pixels. It has multiple wirings 511 that can be connected. The multiple wirings 511 are located on the outer periphery of the substrate 510. It is routed all the way to the terminal 519, and a part of it makes up terminal 519. Terminal 519 is FPC509( 1) Connect electrically to it.

[0141] <Touch sensor> On the substrate 590, there are a touch sensor 595 and a plurality of wiring 598 that is electrically connected to the touch sensor 595. The plurality of wirings 598 are routed along the outer peripheral portion of the substrate 590, and a part thereof constitutes a terminal. And the terminal is electrically connected to the FPC509(2).

[0142] As the touch sensor 595, for example, a capacitance-type touch sensor can be applied. Capacitance types include surface capacitance type, projected capacitance type, etc.

[0143] As the projected capacitance type, mainly due to the difference in driving methods, there are self-capacitance type and mutual-capacitance type etc. Using the mutual-capacitance type is preferable because simultaneous multi-point detection becomes possible.

[0144] Hereinafter, the case of applying a projected capacitance type touch sensor will be described.

[0145] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger can be applied.

[0146] The projected capacitance type touch sensor 595 has electrodes 591 and 592. The electrode 591 is electrically connected to any one of the plurality of wirings 598, and the electrode 592 is electrically connected to any other one of the plurality of wirings 598. thereof.

[0147] The wiring 594 electrically connects two electrodes 591 sandwiching the electrode 592. At this time, a shape in which the area of the intersection portion of the electrode 592 and the wiring 594 is as small as possible is preferable. Thereby the area of the region where no electrode is provided can be reduced, and unevenness in transmittance can be reduced. As a result the area of the region where no electrode is provided can be reduced, and unevenness in transmittance can be reduced. As a result As a result, it is possible to reduce the brightness unevenness of the light transmitted through the touch sensor 595.

[0148] Note that the shapes of electrodes 591 and 592 can take on various forms. For example, multiple electrodes 5 Arrange 91 so that there are as few gaps as possible, and connect electrode 592 and electrode 59 through the insulating layer. It is also possible to configure multiple units spaced apart so that there are areas that do not overlap with unit 1. If a dummy electrode, electrically insulated from the two contacting electrodes 592, is placed between them, This is preferable because it reduces the area of ​​regions with different transmittances.

[0149] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and electrode 592, electrode 591 and the insulating layer 593 covering electrode 592 and adjacent electrode 591 It is equipped with wiring 594 for electrical connection.

[0150] The adhesive layer 597 is applied to the substrate 590 so that the touch sensor 595 overlaps the display unit 501. It is bonded to board 570.

[0151] Electrodes 591 and 592 are formed using a light-transmitting conductive material. Examples of conductive materials include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide with added gallium, or graphene are used. It is possible.

[0152] After depositing a translucent conductive material onto the substrate 590 by sputtering, Various patterning techniques, such as trisography, are used to remove unwanted parts, and electrode 59 Electrode 1 and electrode 592 can be formed. Graphene can be produced by CVD, as well as by graphite oxide The material may be formed by applying a solution containing dispersed particles and then reducing it.

[0153] Furthermore, the materials used for the insulating layer 593 include, for example, resins such as acrylic and epoxy. In addition to resins containing siloxane bonds, silicon oxide, silicon oxide nitride, and aluminum oxide are also used. Inorganic insulating materials such as those mentioned above can also be used.

[0154] Furthermore, an opening reaching electrode 591 is provided in the insulating layer 593, and wiring 594 is adjacent to the electrode. 591 is electrically connected. Translucent conductive material increases the aperture ratio of the touch panel. Therefore, it can be suitably used for wiring 594. Also, electrodes 591 and 59 Materials with higher conductivity than 2 can reduce electrical resistance and are therefore suitable for use in wiring 594. can.

[0155] One electrode 592 extends in one direction, and multiple electrodes 592 are arranged in a stripe pattern. .

[0156] Wiring 594 is provided so as to intersect with electrode 592.

[0157] A pair of electrodes 591 are provided flanking one electrode 592, and the wiring 594 is connected to the pair of electrodes 591 They are electrically connected.

[0158] Furthermore, the multiple electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one electrode 592. Alternatively, they may be arranged to form an angle of less than 90 degrees.

[0159] One of the wires 598 is electrically connected to electrode 591 or electrode 592. The part functions as a terminal. Wiring 598 can be, for example, aluminum, gold, platinum, or silver. Nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or paraben. Metallic materials such as zinc, or alloy materials containing such metallic materials, can be used.

[0160] Furthermore, an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0161] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0162] The connecting layer 599 is an anisotropic conductive film (ACF: Anisotropic Co (Inductive Film) and anisotropic conductive paste (ACP: Anisotropic You can use things like (c) Conductive Paste.

[0163] The adhesive layer 597 is translucent. For example, thermosetting resins or UV-curing resins can be used. This can be done, specifically by having acrylic, urethane, epoxy, or siloxane bonds. Resins such as plastics can be used.

[0164] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0165] In this embodiment, a white organic electroluminescent element is applied as a display element. I will explain the combination, but the display elements are not limited to these.

[0166] For example, as display elements, in addition to organic electroluminescent elements, electrophoretic methods and electro Display elements (also called electronic ink) that display information using a powder fluid method, shutter type Various display elements can be used, such as MEMS display elements and optical interference type MEMS display elements. Yes, it is possible. Furthermore, a suitable configuration for the display element to be applied can be selected from various pixel circuits. It is possible.

[0167] The substrate 510 is a flexible substrate 510b, preventing the unintended diffusion of impurities into the light-emitting element. A protective barrier film 510a and an adhesive layer 51 for bonding the substrate 510b to the barrier film 510a. It is a laminate made up of layers of 0c.

[0168] The substrate 570 is a flexible substrate 570b, preventing the unintended diffusion of impurities into the light-emitting element. The protective barrier film 570a and the substrate 570b are bonded together by an adhesive layer 57 It is a laminate of 0c.

[0169] The sealing material 560 bonds the substrate 570 and the substrate 510 together. The sealing material 560 is more airborne than... It has a high refractive index. Also, when light is extracted to the sealing material 560 side, the sealing material 560 is light It also serves as a junction layer. The pixel circuit and light-emitting element (e.g., light-emitting element 550R) are connected to the substrate 510. It is located between circuit board 570.

[0170] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0171] The sub-pixel 502R supplies power to the light-emitting element 550R and the first light-emitting element 550R. It includes a pixel circuit containing a transistor 502t which can perform the following. Also, a light-emitting module 58 0R comprises a light-emitting element 550R and an optical element (e.g., a colored layer 567R).

[0172] The light-emitting element 550R consists of a lower electrode, an upper electrode, and a light-emitting organic material between the lower electrode and the upper electrode. It has a layer containing a compound.

[0173] The light-emitting module 580R has a colored layer 567R in the direction from which light is extracted. Any material that transmits light of a specific wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. A region that allows the light emitted by the child to pass through directly may be provided.

[0174] Furthermore, if the sealing material 560 is provided on the side from which light is extracted, the sealing material 560 is the first It is in contact with the light-emitting element 550R and the colored layer 567R.

[0175] The colored layer 567R is located in a position that overlaps with the light-emitting element 550R. As a result, the light-emitting element 550 A portion of the light emitted by R passes through the colored layer 567R and illuminates the light-emitting module in the direction of the arrow shown in the figure. It is ejected to the outside of the Lu580R.

[0176] Display Unit Configuration The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, colored layer 567R).

[0177] The display unit 501 is provided with an anti-reflective layer 567p in a position that overlaps the pixels. For p, for example, a circular polarizer can be used.

[0178] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. It can be used. This prevents the diffusion of unexpected impurities in transistors such as the 502t. This can suppress the decline in reliability.

[0179] The display unit 501 has a light-emitting element (for example, a light-emitting element 550R) on the insulating film 521.

[0180] The display unit 501 has a partition wall 528 on the insulating film 521 that overlaps the end of the lower electrode. A spacer is provided on the partition wall 528 to control the distance between substrate 510 and substrate 570.

[0181] 《Configuration of the scan line drive circuit》 The scan line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Furthermore, the drive circuit can be formed on the same substrate using the same process as the pixel circuit.

[0182] Other configurations The display unit 501 is equipped with wiring 511 that can supply signals, and terminal 519 is connected to wiring 5 It is located at 11. It can also supply signals such as image signals and synchronization signals. FPC509(1) is electrically connected to terminal 519.

[0183] Note that a printed circuit board (PWB) may be attached to FPC509(1). stomach.

[0184] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0185] Figure 10(A) shows the configuration when a bottom-gate transistor is applied to the display unit 501. This is illustrated in Figure 10(B).

[0186] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 10(A). This can be applied to the transistors 502t and 503t shown.

[0187] For example, a semiconductor layer containing polycrystalline silicon, etc., is used in the transistor 5 shown in Figure 10(B). It can be applied to the 02t and transistor 503t.

[0188] Figure 10(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0189] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 1. This applies to transistors 502t and 503t shown in 0(C). can.

[0190] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0191] (Embodiment 4) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 11.

[0192] Figure 11 is a cross-sectional view of the touch panel 500B.

[0193] The touch panel 500B described in this embodiment processes the supplied image information into transistors The display unit 501 is provided on the side where the display unit is located, and the touch sensor is located at the base of the display unit. The fact that it is located on the board 510 side is different from the touch panel 500 described in Embodiment 3. Here, we will explain in detail the different configurations and the parts where similar configurations can be used. The above explanation is used as a reference.

[0194] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0195] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0196] Sub-pixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. It features a pixel circuit including a 502t transistor.

[0197] The light-emitting module 580R consists of a light-emitting element 550R and an optical element (e.g., a colored layer 567R). It is equipped with.

[0198] The light-emitting element 550R consists of a lower electrode, an upper electrode, and a light-emitting organic material between the lower electrode and the upper electrode. It has a layer containing a compound.

[0199] The light-emitting module 580R has a colored layer 567R in the direction from which light is extracted. Any material that transmits light of a specific wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. A region that allows the light emitted by the child to pass through directly may be provided.

[0200] The colored layer 567R is located in a position that overlaps with the light-emitting element 550R. Also, as shown in Figure 11(A) The optical element 550R emits light towards the side where the transistor 502t is located. Furthermore, some of the light emitted by the light-emitting element 550R passes through the colored layer 567R, as shown by the arrow in the figure. It is emitted to the outside of the directional light-emitting module 580R.

[0201] Display Unit Configuration The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, colored layer 567R).

[0202] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. This can be used to prevent, for example, unexpected impurities from diffusing from the colored layer 567R. This can suppress the decrease in reliability of transistors such as the 502t.

[0203] <Touch sensor> The touch sensor 595 is located on the circuit board 510 side of the display unit 501 (Figure 11(A)). reference).

[0204] The adhesive layer 597 is located between the substrate 510 and the substrate 590, and connects the display unit 501 and the touch sensor 5 Glue together 95.

[0205] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0206] Figure 11(A) shows the configuration when a bottom-gate transistor is applied to the display unit 501. This is illustrated in Figure 11(B).

[0207] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 11(A). This can be applied to the transistors 502t and 503t shown.

[0208] For example, a semiconductor layer containing polycrystalline silicon, etc., is shown in the transistor 5 shown in Figure 11(B). It can be applied to the 02t and transistor 503t.

[0209] Figure 11(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0210] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 1. This applies to transistors 502t and 503t shown in 1(C). can.

[0211] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0212] (Embodiment 5) In this embodiment, the semiconductor layer of a semiconductor device applicable to a display panel according to one aspect of the present invention is A suitable oxide semiconductor for use will be described.

[0213] Oxide semiconductors have a large energy gap of 3.0 eV or more, making oxide semiconductors suitable for An oxide semiconductor film obtained by processing under certain conditions and sufficiently reducing its carrier density is applied. In a transistor, the leakage current between the source and drain in the off state (off current) This can be made extremely low compared to conventional silicon-based transistors. .

[0214] Applicable oxide semiconductors include at least indium (In) or zinc (Zn). It is preferable that the oxide semiconductor contains ) and is particularly preferable that it contains In and Zn. As stabilizers to reduce variations in the electrical characteristics of transistors using these, In addition, gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) Titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (for example) One of the following is selected from cerium (Ce), neodymium (Nd), and gadolinium (Gd). It is preferable that multiple species are included.

[0215] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and in-Zn-based acids. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (Also written as), In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Z n-based oxides, In-Zr-Zn oxides, In-Ti-Zn oxides, In-Sc-Zn oxides In-Y-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides Materials, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​oxides, I n-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga- Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, I n-Hf-Al-Zn oxides can be used.

[0216] Here, an In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. It refers to the material itself, and the ratio of In, Ga, and Zn is irrelevant. Also, other than In, Ga, and Zn... It may contain metallic elements.

[0217] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0, and m is not an integer) Materials represented by ) may also be used. Note that M is selected from Ga, Fe, Mn, and Co. This refers to one or more metallic elements, or the elements used as stabilizers as described above. Also, as an oxide semiconductor, In2SnO5(ZnO) n (n > 0, and n is an integer) You may use the materials indicated as follows.

[0218] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A or In-Ga-Zn oxides with an atomic ratio of In:Ga:Zn=2:1:3 and their composition It is preferable to use an oxide from the vicinity of [the specified location].

[0219] When an oxide semiconductor film contains a large amount of hydrogen, it combines with the oxide semiconductor, causing water to form. Some of the elements become donors, generating electrons, which are carriers. This causes the transistor The threshold voltage of the film shifts in the negative direction. Therefore, the formation of oxide semiconductor films is affected. Subsequently, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or water from the oxide semiconductor film. It is preferable to remove impurities and purify the material to a high degree to minimize its content.

[0220] Furthermore, by dehydrating (dehydrogenating) the oxide semiconductor film, Oxygen may also decrease simultaneously. Therefore, in order to compensate for the oxygen deficiency increased by the dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film, it is preferable to perform a process of adding oxygen to the oxide semiconductor. In this specification and the like, the case of supplying oxygen to the oxide semiconductor film may be referred to as an oxygen addition treatment. Or the case of making the oxygen contained in the oxide semiconductor more than the stoichiometric composition may be referred to as a peroxygenation treatment.

[0221] 17 / cm 3 16 / cm 3 15 / cm 3 14 / cm 3 13 / cm 3

[0222] -18 A or less, preferably 1×10 -21 A or less, more preferably 1×10 -24 A or less, or 85 ​​​​​​​​​​​​​​​​​​1 × 10°C -15 A or less, preferably 1 × 10 -18 A or less, more preferably 1× 10 -21 It can be less than or equal to A. Note that the transistor being in the off state is n-channel. In the case of a transistor of this type, this refers to the state where the gate voltage is sufficiently lower than the threshold voltage. Specifically, if the gate voltage is 1V, 2V, or 3V lower than the threshold voltage The transistor then turns off.

[0223] The structure of oxide semiconductor films will be described below.

[0224] In this specification, "parallel" means that two lines are at an angle of -10° or more and 10° or less. This refers to a state in which the elements are positioned. Therefore, it also includes cases where the angle is between -5° and 5°. "Approximately parallel" means that two lines are positioned at an angle of -30° or more and 30° or less. Furthermore, "perpendicular" means that two lines are positioned at an angle of 80° to 100°. This refers to a state where the angle is perpendicular. Therefore, it also includes cases where the angle is between 85° and 95°. It also refers to "approximately perpendicular." This refers to a state in which two straight lines are positioned at an angle between 60° and 120°.

[0225] Furthermore, in this specification, if the crystal is trigonal or rhombohedral, it is listed as hexagonal. vinegar.

[0226] Oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligned) is used. Crystalline Oxide Semiconductor, Polycrystalline Oxide These include semiconductors, microcrystalline oxide semiconductors, and amorphous oxide semiconductors.

[0227] From another perspective, oxide semiconductors include amorphous oxide semiconductors and other crystalline oxides. They can be divided into semiconductors and crystalline oxide semiconductors. Crystalline oxide semiconductors include single-crystal oxide semiconductors and CAAC- Examples include OS, polycrystalline oxide semiconductors, and microcrystalline oxide semiconductors.

[0228] First, let's explain CAAC-OS. Note that CAAC-OS is referred to as CANC(C- This is called an oxide semiconductor having axis-aligned nanocrystals. It can also be done this way.

[0229] CAAC-OS is an oxide having multiple c-axis oriented crystalline portions (also called pellets). It is a type of semiconductor.

[0230] Transmission Electron Microscope (TEM) A composite analysis image of the bright-field image and diffraction pattern of CAAC-OS (high-angle scope) is obtained. Also called a high-resolution TEM image, when observed, multiple pellets can be identified. On the other hand, in high-resolution TEM images, the boundaries between pellets, i.e., grain boundaries, and It is also said that it is not possible to clearly confirm the grain boundaries. Therefore, CAAC-OS is said to be at the grain boundaries. This means that a decrease in electron mobility caused by this phenomenon is less likely to occur.

[0231] The following describes CAAC-OS observed by TEM. Figure 12(A) The image shows a high-resolution TEM image of the cross-section of CAAC-OS observed from a direction approximately parallel to the sample surface. For observing high-resolution TEM images, spherical aberration correction is necessary. The n Corrector function was used. High-resolution TEM images using spherical aberration correction function were obtained. This is specifically called a Cs-corrected high-resolution TEM image. Acquisition of a Cs-corrected high-resolution TEM image can be done, for example, This is performed using an atomic-resolution analytical electron microscope such as the JEM-ARM200F manufactured by JEOL Ltd. It is possible.

[0232] Figure 12(B) shows an enlarged Cs-corrected high-resolution TEM image of region (1) in Figure 12(A). Figure 12(B) shows that the metal atoms in the pellet are arranged in layers. The arrangement of metal atoms in each layer is the plane (also called the surface to be formed) that forms the CAAC-OS film. Alternatively, it reflects the irregularities of the upper surface and is parallel to the surface or upper surface of the CAAC-OS that is formed on it.

[0233] As shown in Figure 12(B), CAAC-OS has a characteristic atomic arrangement. Figure 12(C Figures 12(B) and 12(C) show characteristic atomic arrangements indicated by auxiliary lines. ) Therefore, the size of each pellet is approximately 1 nm to 3 nm, and pellets It can be seen that the size of the gap caused by the tilt is approximately 0.8 nm. Therefore, Pellets can also be called nanocrystals (nc).

[0234] Here, based on the Cs-corrected high-resolution TEM image, the pellets of CAAC-OS on substrate 5120 are... The arrangement of the 5100 can be schematically represented as a structure resembling stacked bricks or blocks. This is the result (see Figure 12(D)). Between the pellets observed in Figure 12(C) The area where the inclination occurs corresponds to region 5161 shown in Figure 12(D).

[0235] Furthermore, Figure 13(A) shows the plane of CAAC-OS observed from a direction approximately perpendicular to the sample surface. The s-corrected high-resolution TEM images are shown. Regions (1), (2), and (3) of Figure 13(A) are shown. ) are enlarged Cs-corrected high-resolution TEM images, shown in Figure 13(B), Figure 13(C), and Figure 13(C), respectively. This is shown in Figure 13(D). From Figures 13(B), 13(C), and 13(D), the pellets are It can be confirmed that the metal atoms are arranged in a triangular, square, or hexagonal shape. However, no regularity is observed in the arrangement of metal atoms between different pellets.

[0236] Next, C was analyzed by X-ray diffraction (XRD). Let's discuss AAC-OS. For example, CAAC-OS having an InGaZnO4 crystal. When structural analysis of S is performed using the out-of-plane method, the result is as shown in Figure 14(A). In some cases, a peak may appear near a diffraction angle (2θ) of 31°. This peak is in InGa Since it is attributed to the (009) plane of the ZnO4 crystal, the CAAC-OS crystal is c-axis oriented. It can be confirmed that it possesses this property, and that the c-axis is oriented in a direction approximately perpendicular to the surface to be formed or the upper surface.

[0237] In addition, in the structural analysis using the out-of-plane method of CAAC-OS, 2θ is 31 In addition to the peak near °, a peak may also appear when 2θ is near 36°. The nearby peak indicates that some of the crystals in CAAC-OS do not exhibit c-axis orientation. This shows that a more preferable CAAC-OS is structured using the out-of-plane method. The analysis shows that 2θ shows a peak near 31°, but does not show a peak near 36°.

[0238] On the other hand, in the CAAC-OS, X-rays are incident from a direction approximately perpendicular to the c-axis in an in-plane configuration. Structural analysis using the ne method reveals a peak near 2θ = 56°. This peak corresponds to I It is attributed to the (110) plane of the nGaZnO4 crystal. In the case of CAAC-OS, 2θ is 5 The sample is fixed at approximately 6° and analyzed while rotating it around the normal vector of the sample surface as the axis (φ axis). Even after performing a (φ scan), no clear peak appears, as shown in Figure 14(B). In contrast, with a single-crystal oxide semiconductor of InGaZnO4, if 2θ is fixed to around 56°, then φ When scanned, it is assigned to a crystal plane equivalent to the (110) plane, as shown in Figure 14(C). Six peaks are observed. Therefore, structural analysis using XRD indicates that CAAC-OS is It can be confirmed that the orientation of the a-axis and b-axis is irregular.

[0239] Next, we will explain CAAC-OS analyzed by electron diffraction. For example, InGa For CAAC-OS containing ZnO4 crystals, a probe with a diameter of 300 nm is used parallel to the sample surface. When the electron beam is incident, a diffraction pattern like the one shown in Figure 15(A) (limited field transmitted electron wave) is observed. This diffraction pattern may appear. (Also called a diffraction pattern.) The spot originates from the (009) plane of the crystal. Therefore, electron diffraction also reveals The pellets contained in CAAC-OS have c-axis orientation, and the c-axis is on the surface to be formed or the upper surface. It can be seen that it is oriented in a nearly perpendicular direction. On the other hand, for the same sample, when the probe is directed perpendicular to the sample surface... Figure 15(B) shows the diffraction pattern when an electron beam with a diameter of 300 nm is incident on the surface. From 5(B), a ring-shaped diffraction pattern is observed. Therefore, electron diffraction also shows It can be seen that the a-axis and b-axis of the pellets contained in CAAC-OS do not have orientation. Note that the first ring in Figure 15(B) is the (010) plane of the InGaZnO4 crystal. This is thought to be caused by the nominal (100) plane, etc. Also, the second ring in Figure 15(B) This is thought to be caused by (110) planes, etc.

[0240] Furthermore, CAAC-OS is an oxide semiconductor with a low defect level density. Possible defects include, for example, defects caused by impurities or oxygen deficiencies. Therefore, CA AC-OS can also be described as an oxide semiconductor with a low impurity concentration. Furthermore, CAAC-O S can also be described as an oxide semiconductor with few oxygen vacancies.

[0241] Impurities in oxide semiconductors can act as carrier traps or carrier sources. This can happen. Also, oxygen vacancies in oxide semiconductors can act as carrier traps, It can sometimes become a carrier source by capturing hydrogen.

[0242] Impurities are elements other than the main components of oxide semiconductors, such as hydrogen, carbon, silicon, and transition gold. There are group elements, for example. For example, silicon and other metal elements that make up oxide semiconductors are more acidic than the metal elements that make up oxide semiconductors. Elements with strong bonding forces can remove oxygen from oxide semiconductors, thereby altering the atomic arrangement of the oxide semiconductor. This disrupts the crystallinity and reduces its properties. Also, heavy metals such as iron and nickel, and argon, Because carbon dioxide and other elements have large atomic radii (or molecular radii), the atomic arrangement of oxide semiconductors This disrupts the crystallinity and reduces its properties.

[0243] Furthermore, oxide semiconductors with a low defect level density (few oxygen vacancies) have a low carrier density. Such oxide semiconductors can be made into high-purity intrinsic or substantially high-purity intrinsic materials. It is called an oxide semiconductor. CAAC-OS has a low impurity concentration and a low defect level density. Therefore, CA Transistors using AC-OS exhibit electrical characteristics where the threshold voltage is negative (normally It is also called -on.) It rarely becomes. Also, high purity intrinsic or substantially high purity intrinsic Oxide semiconductors have few carrier traps. The charged particles take a long time to release, behaving almost like fixed charges. Therefore, transistors using oxide semiconductors with high impurity concentrations and high defect level densities are available. Distors can sometimes have unstable electrical characteristics. On the other hand, transients using CAAC-OS This results in a transistor with minimal variation in electrical characteristics and high reliability.

[0244] Furthermore, because CAAC-OS has a low defect level density, the defect levels are trapped by light irradiation. The number of carriers decreases. Therefore, transistors using CAAC-OS are visible. The electrical properties are less affected by irradiation with light or ultraviolet light.

[0245] Next, we will explain microcrystalline oxide semiconductors.

[0246] Microcrystalline oxide semiconductors have regions where crystalline parts can be observed in high-resolution TEM images. It has regions where a clear crystalline structure cannot be observed, and regions where a clear crystalline structure cannot be observed. The crystalline portion contained is between 1 nm and 100 nm in size, or between 1 nm and 10 nm in size. This is often the case. In particular, microcrystalline molecules between 1 nm and 10 nm, or between 1 nm and 3 nm. Oxide semiconductors having nanocrystals are called nc-OS (nanocrystallin It is called e Oxide Semiconductor. nc-OS is, for example, a high-resolution semiconductor. In some cases, grain boundaries cannot be clearly identified in TEM images. Note that nanocrystals are CAA It may have the same origin as the pellets in C-OS. Therefore, nc- The crystalline portion of an operating system (OS) is sometimes referred to as a pellet.

[0247] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In addition, nc-OS has different properties. No regularity is observed in the crystal orientation between the letts. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be indistinguishable from amorphous oxide semiconductors. There are cases where XRD equipment using X-rays with a larger diameter than pellets is used for nc-OS. When structural analysis is performed using this method, the out-of-plane method reveals the crystal planes. No peaks are detected. Also, compared to nc-OS, the probe diameter is larger than that of the pellet. For example, electron diffraction (also called limited-field electron diffraction) is performed using an electron beam of 50 nm or greater. Then, a diffraction pattern resembling a halo pattern is observed. On the other hand, for nc-OS, Pelle Nanobeam electron diffractometers use electron beams with a probe diameter close to or smaller than the pellet size. When the beam is folded, a spot is observed. Furthermore, nanobeam electron diffraction is performed on the nc-OS. In some cases, a region of high brightness can be observed in a circular (ring-shaped) pattern. Furthermore, Multiple spots may be observed within a ring-shaped region.

[0248] Thus, since there is no regularity in the crystal orientation between pellets (nanocrystals), nc -OS has RANC (Random Aligned nanocrystals) Oxide semiconductors, or NANC (Non-Aligned nanocrystals), It can also be called an oxide semiconductor having s).

[0249] nc-OS is an oxide semiconductor with higher orderliness than amorphous oxide semiconductors. nc-OS has a lower defect level density than amorphous oxide semiconductors. However, nc-O S shows no regularity in crystal orientation between different pellets. Therefore, nc-OS is C Compared to AAC-OS, the defect level density is higher.

[0250] Next, we will explain amorphous oxide semiconductors.

[0251] Amorphous oxide semiconductors are characterized by an irregular arrangement of atoms within the film and lack of crystalline regions. It is a material semiconductor. One example is an oxide semiconductor that has an amorphous state, such as quartz.

[0252] In amorphous oxide semiconductors, crystalline regions cannot be observed in high-resolution TEM images.

[0253] When structural analysis of amorphous oxide semiconductors is performed using an XRD device, out-of-p Analysis using the Lane method did not detect any peaks indicating crystal planes. Furthermore, amorphous oxide semi-crystalline materials were found. When electron diffraction is performed on a conductor, a halo pattern is observed. Furthermore, amorphous oxide semiconductors... When nanobeam electron diffraction is performed on a body, no spots are observed, only a halo pattern is seen. It is observed.

[0254] Various views have been expressed regarding amorphous structures. For example, some argue that there is absolutely no order in the arrangement of atoms. A structure that does not possess a completely amorphous structure It is sometimes called the nearest neighbor distance or second nearest neighbor distance. A structure that possesses order but lacks long-range order is sometimes called an amorphous structure. Therefore, according to the most strict definition, an oxide semiconductor having even a slight order in its atomic arrangement is non- It cannot be called a crystalline oxide semiconductor. Furthermore, it does not possess long-range order. A material semiconductor cannot be called an amorphous oxide semiconductor. Therefore, since it has a crystalline portion... For example, CAAC-OS and nc-OS are amorphous oxide semiconductors or completely amorphous It cannot be called an oxide semiconductor.

[0255] Furthermore, oxide semiconductors may have a structure between nc-OS and amorphous oxide semiconductors. Yes, such an oxide semiconductor is a type of oxide semiconductor, particularly an amorphous-like oxide semiconductor (al). ike OS:amorphous-like Oxide Semiconductor It is called r).

[0256] a-like OS is characterized by the observation of porosity (also called voids) in high-resolution TEM images. In some cases, the crystalline portion can be clearly identified in high-resolution TEM images. It has a region and a region where the crystalline part cannot be identified.

[0257] Due to its porous nature, a-like OS has an unstable structure. Below, a-lik This demonstrates that e OS has a less stable structure compared to CAAC-OS and nc-OS. Therefore, it shows the structural changes caused by electron irradiation.

[0258] The samples to be irradiated with electrons are a-like OS (referred to as sample A) and nc-OS. Prepare (referred to as Sample B) and CAAC-OS (referred to as Sample C). This sample is also an In-Ga-Zn oxide.

[0259] First, high-resolution cross-sectional TEM images are obtained for each sample. It can be seen that all of the materials contain crystalline parts.

[0260] The crystalline portion can be identified as follows. For example, the crystal of InGaZnO4 The unit cell has three In-O layers and six Ga-Zn-O layers, for a total of nine layers forming the c-axis. It is known to have a layered structure in which layers are stacked in a directional manner. The spacing between these adjacent layers It is approximately the same as the lattice plane spacing (also called the d value) of the (009) plane, and from crystal structure analysis, The value has been determined to be 0.29 nm. Therefore, the spacing between the grid fringes is 0.28 nm or greater. Regions with a wavelength of 0.30 nm or less can be considered as the crystalline portion of InGaZnO4. The lattice patterns correspond to the ab-plane of the InGaZnO4 crystal.

[0261] Figure 16 shows an example of investigating the average size of the crystalline regions (22 to 45 locations) in each sample. However, the length of the lattice fringes mentioned above is used as the size of the crystal portion. From Figure 16, a-li It can be seen that the crystalline portion of keOS increases in proportion to the cumulative amount of electron irradiation. Specifically, as shown in (1) in Figure 16, the initial TEM observation is approximately 1.2 nm. The crystal region (also called the initial nucleus), which was initially a certain size, increased in size when the cumulative irradiation dose reached 4.2 × 10⁻⁶. 8 e - / n m 2 In this case, it can be seen that it has grown to a size of about 2.6 nm. On the other hand, nc-O S and CAAC-OS have a cumulative electron dose of 4.2 × 10⁻⁶ from the start of electron irradiation. 8 e - / nm 2Within this range, it can be seen that there is no change in the size of the crystal portion. Specifically, As shown in (2) and (3) in Figure 16, regardless of the cumulative dose of electrons, nc-OS The crystal size of CAAC-OS is approximately 1.4 nm and 2.1 nm, respectively. It can be seen that this is the case.

[0262] Thus, in a-like OS, crystalline growth can be observed upon electron irradiation. Yes. On the other hand, in nc-OS and CAAC-OS, the growth of the crystal portion by electron irradiation is almost entirely... It can be seen that it cannot be seen. In other words, a-like OS is nc-OS and CAAC- Compared to an operating system, it appears to have an unstable structure.

[0263] Furthermore, because it is porous, a-like OS is compared to nc-OS and CAAC-OS. All of them are low-density structures. Specifically, the density of a-like OS is low compared to single-layer structures of the same composition. The density of the crystal will be between 78.6% and 92.3%. Also, the density of nc-OS and CAA The density of C-OS is between 92.3% and 100% of the density of a single crystal of the same composition. Oxide semiconductors with a crystal density of less than 78% are inherently difficult to deposit into film.

[0264] For example, in an oxide semiconductor satisfying In:Ga:Zn=1:1:1 [atomic ratio], The density of single-crystal InGaZnO4 with a rhombohedral crystal structure is 6.357 g / cm³. 3 This is how it will be. For example, in an oxide semiconductor that satisfies In:Ga:Zn=1:1:1 [atomic ratio] The density of a-like OS is 5.0 g / cm³. 3 More than 5.9g / cm 3 It will be less than. For example, in an oxide semiconductor satisfying In:Ga:Zn=1:1:1 [atomic ratio] The densities of nc-OS and CAAC-OS are 5.9 g / cm³. 3 More than 6.3g / cm 3 It will be less than.

[0265] Note that single crystals with the same composition may not exist. In that case, a mixture of crystals with different compositions in any proportion may be used. By combining single crystals, the density equivalent to a single crystal at any given composition can be estimated. It is possible to obtain the density equivalent to a single crystal of any composition by combining single crystals of different compositions. The proportion can be estimated using a weighted average. However, the density should be as small as possible. It is preferable to estimate by combining different types of single crystals.

[0266] As described above, oxide semiconductors can take on various structures, each possessing a variety of properties. Oxide semiconductors include, for example, amorphous oxide semiconductors, a-like OS, and microcrystalline oxide semiconductors. The film may be a multilayer film containing two or more materials, including a monocrystalline semiconductor and CAAC-OS.

[0267] CAAC-OS films can be formed, for example, by the following method.

[0268] CAAC-OS films are, for example, polycrystalline oxide semiconductor sputtering targets. The film is deposited using a sputtering method.

[0269] By increasing the substrate temperature during film deposition, the migration of sputtering particles after reaching the substrate is reduced. This occurs. Specifically, the substrate temperature is between 100°C and 740°C, preferably between 200°C and 740°C. The film is deposited at a temperature of 500°C or lower. By increasing the substrate temperature during film deposition, sputtering particles are formed. When the sputtering particles reach the substrate, migration occurs on the substrate, and the sputtering particles become flat. The surface adheres to the substrate. At this time, the sputtering particles become positively charged, causing sputtering. Because the ring particles repel each other while adhering to the substrate, the sputtering particles become unevenly distributed and non-uniform. This allows for the formation of a CAAC-OS film with uniform thickness without overlapping.

[0270] By reducing the inclusion of impurities during film formation, it is possible to suppress the disruption of the crystalline state due to impurities. For example, the concentration of impurities present in the deposition chamber (such as hydrogen, water, carbon dioxide, and nitrogen) can be measured. It would be good to reduce it. Also, it would be good to reduce the impurity concentration in the film formation gas. Specifically, the dew point is A film-forming gas with a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0271] Furthermore, by increasing the oxygen content in the deposition gas and optimizing the power, plasma damage during film deposition can be reduced. It is preferable to reduce the amount of oxygen. The oxygen content in the film-forming gas is 30% by volume or more, preferably 100%. This is expressed as a percentage by volume.

[0272] Alternatively, the CAAC-OS film is formed by the following method.

[0273] First, a first oxide semiconductor film is deposited with a thickness of 1 nm or more and less than 10 nm. The semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C or higher. The temperature should be 500°C or lower, preferably 150°C to 450°C, and the oxygen content in the film-forming gas should be 30%. The film is formed at a volume of % or more, preferably 100% by volume.

[0274] Next, a heat treatment is performed to transform the first oxide semiconductor film into a highly crystalline first CAAC-OS film. The heat treatment temperature shall be 350°C to 740°C, preferably 450°C to 650°C. The temperature should be below ℃. Furthermore, the heat treatment time should be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. The temperature should be below a certain level. Furthermore, the heat treatment may be carried out in an inert or oxidizing atmosphere. Alternatively, the material is heated in an inert atmosphere, followed by heat treatment in an oxidizing atmosphere. Heat treatment in an air-filled environment allows for a rapid reduction in the impurity concentration of the first oxide semiconductor film. Yes, it is possible. On the other hand, heat treatment in an inert atmosphere generates oxygen vacancies in the first oxide semiconductor film. This can occur. In such cases, the oxygen deficiency is reduced by heat treatment in an oxidizing atmosphere. It is possible. Furthermore, the heat treatment can be performed at 1000 Pa or less, 100 Pa or less, or 10 Pa or less. This may be carried out under reduced pressure of 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film This can be reduced in an even shorter amount of time.

[0275] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm, so the thickness is 1 Compared to cases where the wavelength is 0 nm or greater, crystallization can be easily achieved by heat treatment.

[0276] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is made 10 nm or more in thickness. The first film is deposited to a thickness of 0 nm or less. The second oxide semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C to 500°C, preferably 150°C to 450°C. The temperature should be below ℃, and the oxygen content in the film-forming gas should be 30% by volume or more, preferably 100% by volume. To form a membrane.

[0277] Next, a heat treatment is performed to solid-phase grow a second oxide semiconductor film from the first CAAC-OS film. This process creates a second CAAC-OS film with high crystallinity. The heat treatment temperature is 350°C. The temperature should be between 740°C and 750°C, preferably between 450°C and 650°C. The interval shall be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. Furthermore, the heat treatment shall be as follows: The process can be carried out in an inert or oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After this, heat treatment is performed in an oxidizing atmosphere. Heat treatment in an inert atmosphere produces a second acid The impurity concentration of the ionized semiconductor film can be reduced in a short time. On the other hand, in an inert atmosphere... Heat treatment can create oxygen vacancies in the second oxide semiconductor film. In that case, oxidation The oxygen deficiency can be reduced by heat treatment in a suitable atmosphere. Note that the heat treatment is 1 It can also be done under reduced pressure of 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced even more quickly. Cut.

[0278] In this manner, a CAAC-OS film with a total thickness of 10 nm or more is formed. It is possible.

[0279] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Explanation of Symbols]

[0280] 101 cabinets 102 circuit boards 103 FPC 103a FPC 104 IC 105 Touch Sensor 106 FPC 110 Display Panel 111 Display area 112 Display area 113 Display area 114 Display area 115 Display area 121 icons 122 characters of information 123 icons 124-character information 125 Slide Bar 126 fingers 131 sides 132 sides 133 sides 138 Notch 141 Drive Circuit 142 Drive Circuit 143 Drive Circuit 145 Wiring 146 Wiring 300 Touch Panels 301 Display section 302 pixels 302B subpixels 302G sub-pixels 302R sub-pixel 302t transistor 303c capacity 303g(1) Scan line drive circuit 303g(2) Image Pixel Driving Circuit 303s(1) Image signal line driving circuit 303s(2) Imaging signal line drive circuit 303t transistor 308 image pixels 308p Photoelectric element 308t transistor 309 FPC 310 circuit board 310a Barrier film 310b board 310c adhesive layer 311 Wiring 319 terminals 321 Insulating film 328 Bulkhead 329 Spacer 350R light-emitting element 351R lower electrode 352 Upper electrode 353 layers 353a Light-emitting unit 353b Light-emitting unit 354 Middle Class 360 sealing material 367BM light shielding layer 367p anti-reflection layer 367R colored layer 370 Opposing substrate 370a Barrier film 370b board 370c adhesive layer 380B Light-Emitting Module 380G Light-Emitting Module 380R Light-Emitting Module 500 Touch Panels 500B Touch Panel 501 Display section 502R sub-pixel 502t transistor 503c capacity 503g(1) Scan line drive circuit 503t transistor 509 FPC 510 circuit board 510a Barrier film 510b circuit board 510c adhesive layer 511 Wiring 519 terminals 521 Insulating film 528 Bulkhead 550R luminescent element 560 Sealing material 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 circuit boards 570a Barrier film 570b circuit board 570c ​​adhesive layer 580R Light-Emitting Module 590 circuit boards 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connectivity Layer 5100 pellets 5120 circuit board 5161 area

Claims

[Claim 1] A display panel comprising a flexible substrate, The display panel comprises a first display area, a second display area, and a third display area. The first display area has a quadrilateral shape for its outline and includes a first side and a second side that form the first corner of the outline. The second display area is provided adjacent to the first side, and the width of the second display area in the direction parallel to the first side is equal to the length of the first side. The third display area is provided adjacent to the second side, and the width of the third display area in the direction parallel to the second side is equal to the length of the second side. The substrate has a notch in the region facing the first display area, with the first corner in between. Display panel.

Images