Thermoelectric elements

Abstract

A thermoelectric element according to one embodiment of the present invention includes a first substrate, a first buffer layer disposed on the first substrate, a first electrode disposed on the first buffer layer, P-type thermoelectric legs and N-type thermoelectric legs disposed on the first electrode, second electrodes disposed on the P-type thermoelectric legs and N-type thermoelectric legs, a second buffer layer disposed on the second electrode, and a second substrate disposed on the second buffer layer, wherein at least one of the first buffer layer and the second buffer layer contains a silicone resin and an inorganic material, and at least one of the first buffer layer and the second buffer layer has a Young's modulus of 1 to 65 MPa.

Description

[Technical field]

[0001] The present invention relates to thermoelectric elements, and more particularly to substrates and inter-electrode structures of thermoelectric elements. [Background technology]

[0002] Thermoelectricity is a phenomenon that occurs due to the movement of electrons and holes inside a material, and refers to the direct energy conversion between heat and electricity.

[0003] A thermoelectric element is a general term for elements that utilize the thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are joined between metal electrodes to form a PN junction pair.

[0004] Thermoelectric elements can be classified into elements that use the temperature change of electrical resistance, elements that use the Seebeck effect, which is a phenomenon in which an electromotive force is generated due to a temperature difference, and elements that use the Peltier effect, which is a phenomenon in which heat absorption or heat generation occurs due to an electric current. Thermoelectric elements are widely used in home appliances, electronic components, communication components, etc. For example, thermoelectric elements can be used in cooling devices, heating devices, power generation devices, etc. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.

[0005] The thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array between an upper substrate and a lower substrate, a plurality of upper electrodes are arranged between the plurality of thermoelectric legs and the upper substrate, and a plurality of lower electrodes are arranged between the plurality of thermoelectric legs and the lower substrate, where one of the upper substrate and the lower substrate can be a low temperature part and the other can be a high temperature part.

[0006] Meanwhile, when a thermoelectric element is applied to a power generating device, the greater the temperature difference between the low temperature part and the high temperature part, the higher the power generation performance. For example, the temperature of the high temperature part may be higher than 200°C. When the temperature of the high temperature part exceeds 200°C, thermal stress is applied to the substrate on the high temperature part due to the difference in thermal expansion coefficient between the substrate on the high temperature part and the electrode, which may destroy the electrode structure. When the electrode structure is destroyed, cracks may occur in the joint surface between the solder arranged on the electrode and the thermoelectric leg, which may reduce the reliability of the thermoelectric element.

[0007] On the other hand, there have been increasing attempts to use metal substrates to improve the heat transfer performance of thermoelectric elements.

[0008] Generally, a thermoelectric element can be manufactured by sequentially laminating electrodes and thermoelectric legs on a pre-installed metal substrate. When a metal substrate is used, it has an advantageous effect in terms of thermal conduction, but has a problem of reduced reliability over long-term use due to its low withstand voltage.

[0009] Accordingly, there is a need for a thermoelectric element having improved thermal conductivity, voltage resistance and thermal stress relaxation performance. Summary of the Invention [Problem to be solved by the invention]

[0010] The technical problem to be solved by the present invention is to provide a buffer layer for a thermoelectric element which has improved thermal conductivity, voltage resistance and thermal stress relaxation properties. [Means for solving the problem]

[0011] A thermoelectric element according to an embodiment of the present invention includes a first substrate, a first buffer layer disposed on the first substrate, a first electrode disposed on the first buffer layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a second buffer layer disposed on the second electrode, and a second substrate disposed on the second buffer layer, wherein at least one of the first buffer layer and the second buffer layer contains a silicone resin and an inorganic material, and at least one of the first buffer layer and the second buffer layer has a Young's modulus of 1 to 65 MPa.

[0012] The reference temperature for defining the Young's modulus may be between 150°C and 200°C.

[0013] The silicone resin may include PDMS (polydimethylsiloxane), and the inorganic material may be included in at least one of the first buffer layer and the second buffer layer at 85 to 90 wt %.

[0014] The inorganic materials may include a first inorganic material group having a D50 of 5 to 20 μm, a second inorganic material group having a D50 of 20 to 30 μm, and a third inorganic material group having a D50 of 30 to 40 μm.

[0015] The temperature on the first substrate side may be lower than the temperature on the second substrate side.

[0016] The second buffer layer may have a Young's modulus of 1 to 65 MPa.

[0017] The first substrate may be an aluminum substrate and the second substrate may be a copper substrate.

[0018] The semiconductor device may further include a first insulating layer disposed between the first substrate and the first buffer layer.

[0019] The first insulating layer may include aluminum oxide.

[0020] The first insulating layer may be further disposed on at least one of a surface of the first substrate opposite a surface facing the second substrate and a side surface of the first substrate.

[0021] The first insulating layer may be a composite layer made of a composite containing silicon and aluminum.

[0022] The semiconductor device may further include a second insulating layer disposed between the second buffer layer and the second substrate, and the second insulating layer may be selected from an aluminum oxide layer, a composite layer made of a composite containing silicon and aluminum, and a resin layer made of a resin composition containing at least one of an epoxy resin and a silicone resin and an inorganic material.

[0023] The display may further include a heat sink disposed on the second substrate.

[0024] The second buffer layer may have a thickness greater than a thickness of the first buffer layer.

[0025] The first buffer layer may have a Young's modulus change rate of within 10% at 150° C. to 200° C. for 500 hours.

[0026] A power generation system according to an embodiment of the present invention includes a thermoelectric element according to an embodiment of the present invention; a first fluid flowing toward the first substrate side of the thermoelectric element; and a second fluid flowing toward the second substrate side of the thermoelectric element and having a temperature 95°C to 185°C higher than that of the first fluid, wherein a resistance change rate of the thermoelectric element is within 7% for 500 hours. Effect of the Invention

[0027] According to the embodiments of the present invention, a thermoelectric element having excellent performance and high reliability can be obtained. In particular, according to the embodiments of the present invention, a thermoelectric element having improved not only thermal conductivity performance but also voltage resistance performance and thermal stress relaxation performance can be obtained.

[0028] The thermoelectric device according to the embodiment of the present invention can be applied not only to small applications but also to large applications such as vehicles, ships, steelworks, and incinerators. [Brief description of the drawings]

[0029] [Figure 1] FIG. 2 is a cross-sectional view of a thermoelectric element. [Diagram 2] FIG. [Diagram 3] FIG. 2 is a perspective view of a thermoelectric element including a sealing member. [Figure 4] FIG. 2 is an exploded perspective view of a thermoelectric element including a sealing member. [Diagram 5] 1 is a cross-sectional view of a thermoelectric element according to an embodiment of the present invention. [Figure 6] FIG. 4 is a cross-sectional view of a thermoelectric element according to another embodiment of the present invention. [Figure 7] FIG. 11 is a cross-sectional view of a thermoelectric element according to still another embodiment of the present invention. [Figure 8] FIG. 11 is a cross-sectional view of a thermoelectric element according to still another embodiment of the present invention. [Figure 9] The bonding structure between the second substrate 380 and the heat sink 390 is illustrated. [Figure 10] 11 is a graph showing the relationship between the temperature and thermal stress of a substrate in a thermoelectric element according to Comparative Example 1. [Figure 11] 1 is a graph showing a temperature differential resistance change rate between a high temperature portion and a low temperature portion of a thermoelectric element according to an example and a comparative example; [Figure 12] 1 is a graph showing the change in Young's modulus depending on the time when the thermoelectric elements according to the example and the comparative example are exposed to 200° C.; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0031] However, the technical concept of the present invention is not limited to the described embodiments, but may be embodied in various different forms, and one or more of the components of the embodiments may be selectively combined or substituted within the scope of the technical concept of the present invention.

[0032] Furthermore, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted in a manner that is commonly understood by a person having ordinary knowledge in the technical field to which the present invention belongs, unless otherwise clearly defined and described, and commonly used terms, such as terms defined in a dictionary, may be interpreted in light of the contextual meaning of the relevant art.

[0033] Furthermore, the terms used in the embodiments of the present invention are intended to describe the embodiments and are not intended to limit the present invention.

[0034] In this specification, the singular can include the plural unless otherwise specified in the context, and when it is stated that "A and (and) at least one (or more) of B and C" it can include one or more of all possible combinations of A, B, and C.

[0035] Additionally, terms such as first, second, A, B, (a), (b), etc. may be used to describe components of embodiments of the present invention.

[0036] Such terms are merely used to distinguish a component from other components, and are not intended to limit the nature, order, or sequence of the components.

[0037] Furthermore, when a component is described as being "coupled," "coupled," or "connected" to another component, it includes not only cases where the component is directly coupled, coupled, or connected to the other component, but also cases where the component is "coupled," "coupled," or "connected" by yet another component between the component and the other component.

[0038] In addition, when described as being formed or disposed "above or below" each component, "above" or "below" includes not only the case where two components are in direct contact with each other, but also the case where one or more other components are formed or disposed between the two components. In addition, when described as "above or below," it can include not only the upper direction but also the lower direction based on one component.

[0039] Fig. 1 is a cross-sectional view of a thermoelectric element, Fig. 2 is a perspective view of the thermoelectric element, Fig. 3 is a perspective view of the thermoelectric element including a sealing member, and Fig. 4 is an exploded perspective view of the thermoelectric element including a sealing member.

[0040] 1 and 2, the thermoelectric device 100 includes a lower substrate 110 , a lower electrode 120 , a P-type thermoelectric leg 130 , an N-type thermoelectric leg 140 , an upper electrode 150 and an upper substrate 160 .

[0041] The lower electrode 120 is disposed between the lower substrate 110 and the lower bottom surfaces of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140, and the upper electrode 150 is disposed between the upper substrate 160 and the upper bottom surfaces of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140 disposed and electrically connected between the lower electrode 120 and the upper electrode 150 may form a unit cell.

[0042] For example, when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the lead wires 181, 182, the substrate in which a current flows from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect absorbs heat and acts as a cooling part, and the substrate in which a current flows from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 heats up and can act as a heating part. Alternatively, when a temperature difference is applied between the lower electrode 120 and the upper electrode 150, charges in the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 move due to the Seebeck effect, generating electricity.

[0043] Here, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth telluride (Bi-Te)-based thermoelectric legs containing bismuth (Bi) and tellurium (Te) as main raw materials. The P-type thermoelectric leg 130 may be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the P-type thermoelectric leg 130 may contain 99 to 99.999 wt% of Bi-Sb-Te as a main raw material with respect to a total weight of 100 wt%, and may contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) at 0.001 to 1 wt%. The N-type thermoelectric leg 140 may be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the N-type thermoelectric leg 140 may contain 99 to 99.999 wt% of the main raw material Bi-Se-Te with respect to a total weight of 100 wt%, and may contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) with a weight of 0.001 to 1 wt%.

[0044] The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a laminate type. In general, the bulk type P-type thermoelectric leg 130 or the bulk type N-type thermoelectric leg 140 may be obtained by heat treating a thermoelectric material to manufacture an ingot, crushing and sieving the ingot to obtain powder for the thermoelectric legs, sintering the powder, and cutting the sintered body. In this case, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be polycrystalline thermoelectric legs. For the polycrystalline thermoelectric legs, the powder for the thermoelectric legs may be compressed at 100 MPa to 200 MPa when sintering. For example, when sintering the P-type thermoelectric leg 130, the powder for the thermoelectric legs may be sintered at 100 MPa to 150 MPa, preferably 110 MPa to 140 MPa, and more preferably 120 MPa to 130 MPa. When sintering the N-type thermoelectric leg 140, the powder for the thermoelectric leg may be sintered at 150 to 200 MPa, preferably 160 to 195 MPa, and more preferably 170 to 190 MPa. In this manner, when the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are polycrystalline thermoelectric legs, the strength of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be increased. The stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 may be obtained through a process of forming unit members by applying a paste containing a thermoelectric material onto a sheet-like substrate, and then stacking and cutting the unit members.

[0045] In this case, the pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 may have the same shape and volume or may have different shapes and volumes. For example, since the electrical conduction characteristics of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140 are different, the height or cross-sectional area of ​​the N-type thermoelectric legs 140 may be formed to be different from the height or cross-sectional area of ​​the P-type thermoelectric legs 130.

[0046] In this case, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal column shape, an elliptical column shape, or the like.

[0047] Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures in which a semiconductor material is applied to a sheet-like substrate, and then cutting the stacked structures. As a result, material loss can be prevented and electrical conductivity characteristics can be improved. Each structure may further include a conductive layer having an opening pattern, thereby increasing the adhesive strength between the structures, decreasing thermal conductivity, and increasing electrical conductivity.

[0048] Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be formed to have different cross-sectional areas within one thermoelectric leg. For example, the cross-sectional area of ​​both ends arranged to face the electrodes within one thermoelectric leg may be formed to be larger than the cross-sectional area between the two ends. This can increase the temperature difference between the two ends, thereby increasing thermoelectric efficiency.

[0049] The performance of the thermoelectric device according to an embodiment of the present invention can be expressed by a thermoelectric figure of merit (ZT). The thermoelectric figure of merit (ZT) can be expressed as Equation 1.

[0050]

number

[0051] where α is the Seebeck coefficient [V / K], σ is the electrical conductivity [S / m], and α 2 σ is the power factor (PowerFactor, [W / mK 2 ]), where T is temperature and k is thermal conductivity [W / mK]. k can be expressed as a·cp·ρ, and a is thermal diffusivity [cm 2 / S], cp is the specific heat [J / gK], and ρ is the density [g / cm 3 ].

[0052] To obtain the thermoelectric figure of merit of a thermoelectric element, a z-meter is used to measure the Z value (V / K), and the measured Z value is used to calculate the thermoelectric figure of merit (ZT).

[0053] Here, the lower electrode 120 disposed between the lower substrate 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 disposed between the upper substrate 160 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may include at least one of copper (Cu), silver (Ag), aluminum (Al) and nickel (Ni) and have a thickness of 0.01 mm to 0.3 mm. If the thickness of the lower electrode 120 or the upper electrode 150 is less than 0.01 mm, the function as an electrode may be deteriorated and the electrical conduction performance may be deteriorated, and if it exceeds 0.3 mm, the conduction efficiency may be reduced due to an increase in resistance.

[0054] The lower substrate 110 and the upper substrate 160 facing each other may be metal substrates and may have a thickness of 0.1 mm to 1.5 mm. If the thickness of the metal substrate is less than 0.1 mm or exceeds 1.5 mm, the reliability of the thermoelectric element may be reduced since the heat dissipation characteristic or thermal conductivity may be excessively high. In addition, when the lower substrate 110 and the upper substrate 160 are metal substrates, an insulating layer 170 may be further formed between the lower substrate 110 and the lower electrode 120 and between the upper substrate 160 and the upper electrode 150, respectively. The insulating layer 170 may include a material having a thermal conductivity of 1 to 20 W / mK.

[0055] At this time, the lower substrate 110 and the upper substrate 160 may be formed to have different sizes. For example, the volume, thickness or area of ​​one of the lower substrate 110 and the upper substrate 160 may be formed to be larger than the volume, thickness or area of ​​the other one. Accordingly, the heat absorption or heat dissipation performance of the thermoelectric element may be improved. Preferably, the volume, thickness or area of ​​the lower substrate 110 may be formed to be larger than at least one of the volume, thickness or area of ​​the upper substrate 160. At this time, when the lower substrate 110 is disposed in a high temperature region due to the Seebeck effect, when it is applied to a heat generation region due to the Peltier effect, or when a sealing member for protecting the thermoelectric module from the external environment described below is disposed on the lower substrate 110, at least one of the volume, thickness or area may be larger than that of the upper substrate 160. At this time, the area of ​​the lower substrate 110 may be formed to be 1.2 to 5 times larger than the area of ​​the upper substrate 160. If the area of ​​the lower substrate 110 is less than 1.2 times that of the upper substrate 160, the effect on improving heat transfer efficiency is not significant, and if it exceeds 5 times, the heat transfer efficiency may decrease significantly and it may be difficult to maintain the basic shape of the thermoelectric module.

[0056] In addition, a heat dissipation pattern, for example, a concave-convex pattern, may be formed on the surface of at least one of the lower substrate 110 and the upper substrate 160. Accordingly, the heat dissipation performance of the thermoelectric device may be improved. When the concave-convex pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the bonding characteristics between the thermoelectric legs and the substrate may be improved. The thermoelectric device 100 includes the lower substrate 110, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, the upper electrode 150, and the upper substrate 160.

[0057] 3 and 4, a sealing member 190 may be further disposed between the lower substrate 110 and the upper substrate 160. The sealing member may be disposed on the sides of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 between the lower substrate 110 and the upper substrate 160. Accordingly, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 may be sealed from external moisture, heat, contamination, and the like. Here, the sealing member 190 may include a sealing case 192 disposed at a predetermined distance from the outermost periphery of the plurality of lower electrodes 120, the outermost periphery of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140, and the outermost periphery of the plurality of upper electrodes 150, a sealant 194 disposed between the sealing case 192 and the lower substrate 110, and a sealant 196 disposed between the sealing case 192 and the upper substrate 160. In this manner, the sealing case 192 may contact the lower substrate 110 and the upper substrate 160 through the sealants 194 and 196. Accordingly, when the sealing case 192 directly contacts the lower substrate 110 and the upper substrate 160, heat conduction occurs through the sealing case 192, and as a result, a problem of a decrease in temperature difference between the lower substrate 110 and the upper substrate 160 may be prevented. Here, the sealant 194, 196 may include at least one of epoxy resin and silicone resin, or may include a tape coated with at least one of epoxy resin and silicone resin on both sides. The sealant 194, 194 serves to seal between the sealing case 192 and the lower substrate 110 and between the sealing case 192 and the upper substrate 160, and may enhance the sealing effect of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150, and may be mixed with a finishing material, a finishing layer, a waterproofing material, a waterproofing layer, etc. Here, the sealant 194 sealing between the sealing case 192 and the lower substrate 110 may be disposed on the upper surface of the lower substrate 110, and the sealant 196 sealing between the sealing case 192 and the upper substrate 160 may be disposed on the side of the upper substrate 160. For this purpose, the area of ​​the lower substrate 110 may be larger than the area of ​​the upper substrate 160. Meanwhile, the sealing case 192 may include an electrode. A guide groove G for leading out the lead wires 180, 182 connected to the sealing case 192 may be formed. For this purpose, the sealing case 192 may be an injection molded product made of plastic or the like, and may be used together with the sealing cover. However, the above description of the sealing member is merely an example, and the sealing member may be modified into various forms. Although not shown, a heat insulating material may be further included to surround the sealing member. Alternatively, the sealing member may include a heat insulating component.

[0058] In the above, the terms lower substrate 110, lower electrode 120, upper electrode 150 and upper substrate 160 have been used, but these are merely arbitrarily designated as upper and lower for ease of understanding and convenience of explanation, and the positions may be reversed so that the lower substrate 110 and lower electrode 120 are disposed at the upper part and the upper electrode 150 and upper substrate 160 are disposed at the lower part.

[0059] Fig. 5 is a cross-sectional view of a thermoelectric element according to one embodiment of the present invention, Fig. 6 is a cross-sectional view of a thermoelectric element according to another embodiment of the present invention, Fig. 7 is a cross-sectional view of a thermoelectric element according to yet another embodiment of the present invention, and Fig. 8 is a cross-sectional view of a thermoelectric element according to yet another embodiment of the present invention. Duplicate explanations of the same contents as those described in Figs. 1 to 4 will be omitted.

[0060] 5 to 8, a thermoelectric element 300 according to an embodiment of the present invention includes a first substrate 310, a first insulating layer 320 disposed on the first substrate 310, a first buffer layer 330 disposed on the first insulating layer 320, a plurality of first electrodes 340 disposed on the first buffer layer 330, a plurality of P-type thermoelectric legs 350 and a plurality of N-type thermoelectric legs 355 disposed on the plurality of first electrodes 340, a plurality of second electrodes 360 disposed on the plurality of P-type thermoelectric legs 350 and the plurality of N-type thermoelectric legs 355, a second buffer layer 370 disposed on the plurality of second electrodes 360, and a second substrate 380 disposed on the second buffer layer 370.

[0061] As shown, a heat sink 390 may be further disposed on the second substrate 380. Although not shown, a sealing member may be further disposed between the first substrate 310 and the second substrate 380.

[0062] In general, when the thermoelectric element 300 is operated, the high temperature side of the thermoelectric element 300 may be exposed to high temperatures for a long time, and shear stress may be transferred to the interface between the electrode and the substrate due to the different thermal expansion coefficients between the electrode and the substrate. In this specification, the shear stress transferred to the interface between the electrode and the substrate due to the different thermal expansion coefficients between the electrode and the substrate is called thermal stress. If the thermal stress exceeds a certain level, cracks may occur in the joint surface between the solder disposed on the electrode and the thermoelectric leg, which may degrade the performance and reliability of the thermoelectric element. In particular, if a heat sink is further disposed on the substrate on the high temperature side of the thermoelectric element 300, the difference in the thermal expansion coefficient between the substrate and the heat sink may also have a significant effect on the durability and reliability of the thermoelectric element 300.

[0063] According to an embodiment of the present invention, a first buffer layer 330 and a second buffer layer 370 may be disposed between the first substrate 310 and the first electrode 340, and between the second electrode 360 ​​and the second substrate 380, respectively, to relieve thermal stress caused by the difference in thermal expansion coefficient between the substrates and the electrodes.

[0064] In this case, the first buffer layer 330 and the second buffer layer 370 include a silicone resin and an inorganic material, and the Young's modulus may be 1 to 65 MPa, preferably 5 to 60 MPa, and more preferably 10 to 50 MPa. In this specification, the Young's modulus may mean the Young's modulus at 200°C or less, and preferably at a temperature between 150°C and 200°C. When the thermoelectric element is applied for power generation, the power generation performance may be improved as the temperature difference between the high temperature part and the low temperature part of the thermoelectric element is larger. Accordingly, the high temperature part of the thermoelectric element may be 150°C or more, preferably 180°C or more, and more preferably 200°C or more. Accordingly, the reference temperature for defining the Young's modulus of the first buffer layer 330 and the second buffer layer 370 in this specification may be a temperature between 150°C and 200°C. If the Young's modulus of the first buffer layer 330 and the second buffer layer 370 satisfies such a numerical range, even if the substrate thermally expands, the buffer layers expand together, so that the thermal stress between the substrate and the electrodes can be minimized and the problem of cracks occurring in the thermoelectric legs can be prevented. Here, the Young's modulus by temperature can be measured using a dynamic mechanical analysis (DMA) device, and in this embodiment, the Young's modulus by temperature was measured for a 10x23x0.05mm test piece at a heating rate of 5°C / min and a frequency of 1Hz using a model RDA-700 Rheometric Scientific DMA device.

[0065] At this time, if the Young's modulus of the first buffer layer 330 and the second buffer layer 370 is less than 1 MPa, the reliability of the thermoelectric device may be easily weakened in an external environment of small shock or vibration since the first buffer layer 330 and the second buffer layer 370 have difficulty in supporting the gap between the substrate and the electrodes. In contrast, if the Young's modulus of the first buffer layer 330 and the second buffer layer 370 exceeds 65 MPa, the thermal stress between the substrate and the electrodes becomes large, and the possibility of cracks occurring at the interface within the thermoelectric device increases.

[0066] According to an embodiment of the present invention, the Young's modulus of the first buffer layer 330 may be different from that of the second buffer layer 370. For example, when the first substrate 310 is a low temperature portion and the second substrate 380 is a high temperature portion, i.e., when the temperature of the first substrate 310 side is lower than that of the second substrate 380 side, the Young's modulus of the second buffer layer 370, which is the buffer layer on the high temperature portion side, may be lower than that of the first buffer layer 330. Accordingly, even if the substrate on the high temperature portion side thermally expands, the buffer layer may expand together with the substrate, so that the thermal stress between the substrate and the electrode may be minimized, and the problem of cracks occurring in the thermoelectric legs may be prevented.

[0067] At this time, the silicone resin contained in the first buffer layer 330 and the second buffer layer 370 may include PDMS (polydimethylsiloxane), and the inorganic material may include at least one of oxide, carbide, and nitride of at least one of aluminum, titanium, zirconium, boron, and zinc. Here, the molecular weight of PDMS may be 5,000 to 30,000 g / mol, preferably 15,000 to 30,000 g / mol. When the molecular weight of PDMS satisfies such a numerical range, the interchain bonding strength of PDMS can be improved, so that the first buffer layer 330 and the second buffer layer 370 can have a Young's modulus of 1 to 65 MPa, preferably 10 to 50 MPa. At this time, the first buffer layer 330 and the second buffer layer 370 may further include a crosslinking agent, and the molecular weight of the crosslinking agent may be 500 to 2000 g / mol, preferably 1,000 to 2,000 g / mol. The higher the molecular weight of the crosslinker, the longer the chain length of the crosslinker, and thus the first buffer layer 330 and the second buffer layer 370 may increase.

[0068] Meanwhile, the inorganic material may be included in the first buffer layer 330 and the second buffer layer 370 at 85-90 wt%. In this case, the inorganic material may include a first inorganic material group having a D50 of 5-20 μm, a second inorganic material group having a D50 of 20-30 μm, and a third inorganic material group having a D50 of 30-40 μm. For example, the first inorganic material group may be included at 1-20 wt%, preferably 5-15 wt%, of the total inorganic material, the second inorganic material group may be included at 10-30 wt%, preferably 15-25 wt%, of the total inorganic material, and the third inorganic material group may be included at 60-80 wt%, preferably 65-75 wt%, of the total inorganic material. In this case, the inorganic material of the first buffer layer 330 and the second buffer layer 370 may have a D50 of 30-40 μm. In this way, when the inorganic material is contained at 85 to 90 wt % of the first buffer layer 330 and the second buffer layer 370 and contains multiple inorganic material groups classified by particle size, the heat dissipation path can be optimized, and the thermal conductivity of the first buffer layer 330 and the second buffer layer 370 can be increased to 2 W / mK or more, preferably 3 W / mK or more.

[0069] In this manner, the first buffer layer 330 and the second buffer layer 370 according to the embodiment of the present invention can not only relieve thermal stress caused by the difference in thermal expansion coefficient between the substrate and the electrodes, but also improve the insulating adhesive strength and thermal conductivity performance between the substrate and the electrodes.

[0070] In this case, the thickness of each of the first buffer layer 330 and the second buffer layer 370 may be 10 to 80 μm, preferably 20 to 60 μm, and more preferably 30 to 45 μm. Here, it is advantageous in terms of thermal conductivity that each of the first buffer layer 330 and the second buffer layer 370 is disposed as thin as possible while maintaining thermal stress relaxation performance, insulation performance, and adhesive performance. If the first substrate 310 is a low temperature part and the second substrate 380 is a high temperature part, the second buffer layer 370 is required to have a higher thermal stress relaxation performance, so the thickness of the second buffer layer 370 may be thicker than the thickness of the first buffer layer 330.

[0071] Meanwhile, as described above, if it is assumed that the first substrate 310 is disposed on the low temperature side of the thermoelectric element 300 and the second substrate 380 is disposed on the high temperature side of the thermoelectric element 300, since an electric wire is connected to the first electrode 340, a higher voltage resistance performance may be required on the low temperature side compared to the high temperature side, and a higher thermal conductivity performance may be required on the high temperature side.

[0072] Accordingly, according to an embodiment of the present invention, the first substrate 310 may be an aluminum substrate, and the second substrate 380 may be a copper substrate. The copper substrate has higher thermal conductivity and electrical conductivity than the aluminum substrate. Accordingly, when the first substrate 310 is an aluminum substrate and the second substrate 380 is a copper substrate, it is possible to satisfy both high voltage resistance performance on the low temperature side and high heat dissipation performance on the high temperature side.

[0073] In order to improve the withstand voltage performance of the low temperature part, a first insulating layer 320 may be disposed between the first substrate 310 and the first buffer layer 330. The withstand voltage performance according to the embodiment of the present invention may mean a characteristic that can be maintained without dielectric breakdown for 10 seconds under a voltage of AC 2.5 kV and a current of 1 mA. In this specification, the withstand voltage performance may be measured by a method in which an insulating layer is disposed on a substrate, one terminal is connected to the substrate, and other terminals are respectively connected to nine points of the insulating layer, and a test is performed to see if the withstand voltage performance can be maintained without dielectric breakdown for 10 seconds under a voltage of AC 2.5 kV and a current of 1 mA.

[0074] According to an embodiment of the present invention, the first insulating layer 320 may include aluminum oxide. Here, the first insulating layer 320 may be an aluminum oxide layer separately stacked on the first substrate 310, or may be an aluminum oxide layer obtained by oxidizing the surface of the first substrate 310, which is an aluminum substrate. For example, the aluminum oxide layer may be formed by anodizing the first substrate 310, which is an aluminum substrate, or may be formed by a dipping process or a spray process.

[0075] According to another embodiment of the present invention, the first insulating layer 320 may include a composite containing silicon and aluminum. Here, the composite may be at least one of an oxide, a carbide, and a nitride containing silicon and aluminum. For example, the composite may include at least one of an Al-Si bond, an Al-O-Si bond, a Si-O bond, an Al-Si-O bond, and an Al-O bond. Thus, a composite containing at least one of an Al-Si bond, an Al-O-Si bond, a Si-O bond, an Al-Si-O bond, and an Al-O bond has excellent insulation performance, and thus obtains high voltage resistance performance. Alternatively, the composite may be an oxide, a carbide, or a nitride further containing titanium, zirconium, boron, zinc, etc., in addition to silicon and aluminum. To this end, the composite may be obtained by a process of mixing at least one of an inorganic binder and an organic-inorganic mixed binder with aluminum, followed by heat treatment. The inorganic binder may include at least one of silica (SiO2), metal alkoxide, boron oxide (B2O3), and zinc oxide (ZnO2), for example. The inorganic binder is an inorganic particle, but when it comes into contact with water, it becomes a sol or gel and can act as a binding agent. At least one of silica (SiO2), metal alkoxide, and boron oxide (B2O3) can increase the adhesion between aluminum or the first substrate 310, and zinc oxide (ZnO2) can increase the strength of the first insulating layer 320 and increase the thermal conductivity.

[0076] Here, the composite may be included in the first insulating layer 320 in an amount of 80 wt % or more, preferably 85 wt % or more, and more preferably 90 wt % or more of the entire first insulating layer 320 .

[0077] In this case, the first insulating layer 320 may have a surface roughness (Ra) of 0.1 μm or more. The surface roughness may be formed by the protrusion of particles forming a complex from the surface of the first insulating layer 320, and may be measured using a surface roughness tester. The surface roughness tester may measure a cross-sectional curve using a probe, and calculate the surface roughness using the peaks, valleys, average line, and reference length of the cross-sectional curve. In this specification, the surface roughness may refer to the arithmetic average roughness (Ra) obtained by a center line average calculation method. The arithmetic average roughness (Ra) may be obtained by the following Equation 2.

[0078]

number

[0079] In other words, when the cross-sectional curve obtained by the probe of the surface roughness measuring instrument is pulled out by the reference length L and expressed as a function (f(x)) with the average line direction as the x-axis and the height direction as the y-axis, the value obtained by Equation 2 can be expressed in μm.

[0080] In this way, when the surface roughness (Ra) of the first insulating layer 320 is 0.1 μm or more, the contact area with the first buffer layer 330 becomes large, and therefore the bonding strength with the first buffer layer 330 can be increased. In particular, as described above, when the first buffer layer 330 contains PDMS, the PDMS of the first buffer layer 330 easily seeps into the grooves formed by the surface roughness of the first insulating layer 320, and therefore the bonding strength between the first insulating layer 320 and the first buffer layer 330 can be further increased.

[0081] At this time, the first insulating layer 320 may be formed on the first substrate 310 through a wet process. Here, the wet process may be a spray coating process, a dip coating process, a screen printing process, etc. This makes it easy to control the thickness of the first insulating layer 320, and allows the application of composites with various compositions.

[0082] In this case, the thickness of the first substrate 310 may be 0.1 to 2 mm, preferably 0.3 to 1.5 mm, and more preferably 0.5 to 1.2 mm, and the thickness of the first insulating layer 320 may be 10 to 100 μm, preferably 20 to 80 μm, and more preferably 30 to 60 μm. When the thickness of the first insulating layer 320 satisfies such a numerical range, high thermal conductivity and voltage resistance can be simultaneously satisfied.

[0083] In this manner, when the first insulating layer 320 and the first buffer layer 330 are disposed on the first substrate 310, and the first electrode 340 is disposed on the first buffer layer 330, the withstand voltage performance of the low temperature part can be further improved compared to a case where the first buffer layer 330 is not disposed. In particular, when the first insulating layer 320 is an aluminum oxide layer formed by surface treating the first substrate 310, and the first buffer layer 330 is disposed on the first insulating layer 320, the withstand voltage performance can be improved while minimizing thermal resistance.

[0084] 6, when the first insulating layer 320 includes aluminum oxide, the first insulating layer 320 may be disposed on both sides of the first substrate 310. That is, an additional first insulating layer 322 may be disposed on one of the two sides of the first substrate 310 opposite to the side on which the first insulating layer 320 is disposed. This can improve the withstand voltage performance without increasing the thermal resistance on the first substrate 310 side, and can also prevent corrosion of the surface of the first substrate 310.

[0085] Alternatively, as shown in FIG. 7, when the first insulating layer 320 includes aluminum oxide, the first insulating layer 320 may also be disposed on a side of the first substrate 310. That is, at least one of the first insulating layer 320 disposed on one side of the first substrate 310 and the first insulating layer 322 disposed on the other side may form an extension 324 extending along the first substrate 310 and be connected to each other on the side of the first substrate 310. As a result, the first insulating layer, for example, an aluminum oxide layer, may be formed on the entire surface of the first substrate 310, and the voltage resistance performance of the low temperature part may be further improved. When the aluminum oxide layer is formed by surface-treating the first substrate 310, it is easy to form an aluminum oxide layer on both sides of the first substrate 310 as in the embodiment of FIG. 6, or to form an aluminum oxide layer on the entire surface of the first substrate 310 as in the embodiment of FIG. 7.

[0086] Meanwhile, as described above, a heat sink may be further disposed on the high temperature side. The second substrate 380 and the heat sink 390 on the high temperature side may be integrally formed, or the second substrate 380 and the heat sink 390 may be bonded to each other separately. In this case, if a metal oxide layer is formed on the second substrate 380, it may be difficult to bond the second substrate 380 and the heat sink 390. Accordingly, in order to increase the bonding strength between the second substrate 380 and the heat sink 390, a metal oxide layer may not be formed between the second substrate 380 and the heat sink 390. That is, if the second substrate 380 is a copper substrate, a copper oxide layer may not be formed on the surface of the copper substrate. To this end, the copper substrate may be surface-treated in advance to prevent oxidation of the copper substrate. For example, when the copper substrate is plated with a metal layer such as nickel, which is less easily oxidized than copper, it is possible to prevent the formation of a metal oxide layer on the copper substrate.

[0087] Meanwhile, according to another embodiment of the present invention, as shown in FIG. 8, a second insulating layer 375 in contact with the second substrate 380 may be further disposed between the second buffer layer 370 and the second substrate 380.

[0088] At this time, the description of the second insulating layer 375 may be the same as that of the first insulating layer 320. That is, the second insulating layer 375 may be an aluminum oxide layer or a composite layer made of a composite containing silicon and aluminum.

[0089] Alternatively, the second insulating layer 375 may have the same composition as the second buffer layer 370 .

[0090] Alternatively, second insulating layer 375 may contain a silicone resin and an inorganic substance, but may have a different composition from second buffer layer 370 and a larger Young's modulus than second buffer layer 370. For example, when second buffer layer 370 has a Young's modulus of 1 to 65 MPa, second insulating layer 375 may have a Young's modulus of 70 to 150 MPa. When second insulating layer 375 has a Young's modulus within this range, the mechanical rigidity between second substrate 380 and second electrode 360 ​​can be maintained.

[0091] To this end, the silicone resin contained in second insulating layer 375 may have a smaller molecular weight than the silicone resin contained in second buffer layer 370, the content of silicone resin contained in second insulating layer 375 may be higher than the content of silicone resin contained in second buffer layer 370, and the content of inorganic matter contained in second insulating layer 375 may be lower than the content of inorganic matter contained in second buffer layer 370. For example, the inorganic matter may be contained in an amount of 60 to 85 wt %, preferably 80 to 85 wt %, of second insulating layer 375.

[0092] Meanwhile, the second buffer layer 370 may be formed by applying an uncured or semi-cured composition onto the second insulating layer 375, and then arranging and pressing the pre-aligned second electrodes 360. In this manner, a portion of the side surface of the second electrodes 360 may be embedded in the second buffer layer 370. At this time, the height of the side surface of the second electrodes 360 embedded in the second buffer layer 370 may be 0.1 to 1.0 times, preferably 0.2 to 0.9 times, and more preferably 0.3 to 0.8 times the thickness of the second electrodes 360. When a portion of the side surface of the second electrodes 360 is embedded in the second buffer layer 370, the contact area between the second electrodes 360 and the second buffer layer 370 is increased, and accordingly, the heat transfer performance, bonding strength, and thermal stress relaxation performance between the second electrodes 360 and the second buffer layer 370 may be further improved.

[0093] More specifically, the thickness of the second buffer layer 370 between the second electrodes 360 may decrease from the side of each electrode toward the center region, forming a V-shape with a rounded apex.

[0094] Although not shown, according to another embodiment of the present invention, the positions of the second buffer layer 370 and the second insulating layer 375 may be changed. For example, the second buffer layer 370 may be disposed so as to contact the second substrate 380, and the second insulating layer 375 may be disposed between the second buffer layer 370 and the second electrode 360, and the Young's modulus of the second buffer layer 370 may be 1 to 65 MPa, and the Young's modulus of the second insulating layer 375 may be 70 to 150 MPa. According to this, the second buffer layer 370 may directly contact the second substrate 380 and expand together with the second substrate 380 due to thermal expansion of the second substrate 380, thereby minimizing the thermal stress applied to the second electrode 360, and the second insulating layer 375 may directly contact the second electrodes 360 and maintain insulation and mechanical strength.

[0095] Meanwhile, according to an embodiment of the present invention, the second substrate 380 and the heat sink 390 may be joined together by a separate fastening member.

[0096] FIG. 9 illustrates an example of a bonding structure between a second substrate 380 and a heat sink 390.

[0097] 9, the heat sink 390 and the second substrate 380 may be fastened by a plurality of fastening members 400. To this end, the heat sink 390 and the second substrate 380 may have through holes S through which the fastening members 400 pass. Here, a separate insulator 410 may be further disposed between the through holes S and the fastening members 400. The separate insulator 410 may be an insulator surrounding the outer periphery of the fastening members 400 or an insulator surrounding the wall surface of the through holes S. This may increase the insulation distance of the thermoelectric element.

[0098] At this time, according to another embodiment of the present invention, a buffer layer made of the same material as the second buffer layer 370 may be disposed between the second substrate 380 and the heat sink 390. This can prevent a problem in which the second substrate 380 and the heat sink 390 are partially separated from each other due to a difference in thermal expansion coefficient between the second substrate 380 and the heat sink 390.

[0099] As described above, according to the embodiment of the present invention, a thermoelectric element having excellent thermoelectric performance and junction performance can be obtained.

[0100] The effects of the present invention will be described more specifically below using comparative examples and examples.

[0101] The thermoelectric element according to the embodiment includes a buffer layer having a Young's modulus of 25 MPa at 200° C., which includes PDMS and an inorganic material in the structure shown in Fig. 5, the thermoelectric element according to the comparative example 1 includes a buffer layer having a Young's modulus of 75 MPa at 200° C., which includes PDMS and an inorganic material in the structure shown in Fig. 5, and the thermoelectric element according to the comparative example 2 has a structure shown in Fig. 5, in which the buffer layer is replaced with a polyimide layer. More specifically, the molecular weight of PDMS included in the buffer layer applied to the thermoelectric element according to the embodiment is 15,000 to 30,000 g / mol, and the content of the inorganic material in the buffer layer is 85 to 90 wt%, and the molecular weight of PDMS included in the buffer layer applied to the thermoelectric element according to the comparative example 1 is 5,000 to 15,000 g / mol, and the content of the inorganic material in the buffer layer is 80 to 85 wt%.

[0102] 10 is a graph showing the relationship between the temperature of the substrate and the thermal stress in the thermoelectric element according to Comparative Example 1. First, it was observed that when the temperature of the substrate in the thermoelectric element according to Comparative Example 1 was 145° C., an interface failure occurred between the substrate and the electrodes. As a result of evaluating the thermal stress with respect to the substrate temperature in the thermoelectric element according to Comparative Example 1, it was observed that the thermal stress was 670 MPa when the substrate temperature was about 145° C. Therefore, it was found that the critical failure stress of the thermoelectric element was 670 MPa.

[0103] On the other hand, an experiment was conducted to examine the correlation between the elastic modulus of the buffer layer and the thermal stress between the substrate and the electrodes, and the results shown in Table 1 were obtained.

[0104] [Table 1]

[0105] That is, it was found that the lower the elastic modulus of the buffer layer, the lower the thermal stress. In particular, when the elastic modulus is 65 MPa or less, the thermal stress is 660 MPa, which is lower than the critical fracture stress.

[0106] On the other hand, in order to improve the power generation performance of a thermoelectric element applied to a power generation device, it is preferable that, under conditions where the temperature of the high temperature part of the thermoelectric element is 150°C to 200°C and the temperature of the low temperature part is 15°C to 55°C, i.e., the temperature difference between the high temperature part and the low temperature part is 95°C to 185°C, no interfacial breakdown occurs between the electrode and the substrate for 500 hours, the rate of change in resistance is maintained within a range of 7%, preferably within a range of 6%, and more preferably within a range of 5%, and the rate of change in Young's modulus is maintained within a range of 10%, preferably within a range of 7%, and more preferably within a range of 5% even when exposed to high temperatures for a long period of time.

[0107] FIG. 11 is a graph showing the temperature differential resistance change rate between the high temperature and low temperature parts of the thermoelectric elements according to the embodiment and the comparative example, and FIG. 12 is a graph showing the change in Young's modulus depending on the time when the thermoelectric elements according to the embodiment and the comparative example are exposed to 200° C.

[0108] Referring to FIG. 11, in the examples, the resistance change rate was maintained within a range of 7% even when the temperature difference between the high temperature and low temperature parts of the thermoelectric element was 145° C. or more, whereas in Comparative Examples 1 and 2, the resistance change rate exceeded 7% even when the temperature difference between the high temperature and low temperature parts of the thermoelectric element was lower than 145° C., and when the temperature difference between the high temperature and low temperature parts was 145° C. or more, the resistance change rate due to thermal stress increased rapidly, resulting in disconnection.

[0109] Referring to FIG. 12, the buffer layer according to the embodiment maintains a change rate of Young's modulus within a range of 10% even when exposed to temperatures of 150°C to 200°C for a long time, whereas the buffer layer according to Comparative Example 1 shows a rapid increase in Young's modulus exceeding 10% as the exposure time at about 200°C increases.

[0110] From this, it can be seen that the thermoelectric element according to the embodiment of the present invention has high reliability since no interfacial breakdown occurs between the electrode and the substrate even under conditions where the temperature of the high temperature part is about 200°C, the resistance change rate is maintained within a range of 7%, and the Young's modulus change rate is maintained within a range of 10% even when exposed to about 200°C for a long period of time.

[0111] The thermoelectric element according to the embodiment of the present invention may be applied to a power generation system that generates electricity by utilizing a temperature difference between a high temperature side and a low temperature side. For example, a first fluid flows to a first substrate side, i.e., a low temperature side, of the thermoelectric element, and a second fluid having a higher temperature than the first fluid flows to a second substrate side, i.e., a high temperature side, and thus a temperature difference occurs between the first substrate side and the second substrate side, and electricity may be generated. In this case, the temperature of the second fluid may be, for example, 95°C to 185°C higher than the temperature of the first fluid.

[0112] Although the present invention has been described above with reference to preferred embodiments, it will be understood by those skilled in the art that various modifications and variations of the present invention may be made without departing from the spirit and scope of the present invention as set forth in the following claims.

Claims

1. A first substrate, a first buffer layer disposed on the first substrate; a first electrode disposed on the first buffer layer; a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode; a second electrode disposed on the P-type thermoelectric leg or the N-type thermoelectric leg; a second buffer layer disposed on the second electrode; and a second substrate disposed on the second buffer layer; At least one of the first buffer layer and the second buffer layer includes a silicon resin and an inorganic material, the first substrate is set to operate as a low temperature side substrate, and the second substrate is a high temperature side substrate set to operate at 150° C. or higher; The Young's modulus of the second buffer layer is 1 to 65 MPa. A thermoelectric element, wherein the reference temperature for defining the Young's modulus is between 150°C and 200°C.

2. The silicone resin includes PDMS (polydimethylsiloxane), The thermoelectric element of claim 1 , wherein the inorganic material is included in at least one of the first buffer layer and the second buffer layer in an amount of 85 to 90 wt %.

3. The thermoelectric element according to claim 2, wherein the molecular weight of the PDMS is 5,000 to 30,000.

4. The thermoelectric element of claim 1 , wherein the Young's modulus of the first buffer layer is different from the Young's modulus of the second buffer layer.

5. The thermoelectric element of claim 4 , wherein the second buffer layer has a lower Young's modulus than the first buffer layer.

6. the first substrate is an aluminum substrate; The thermoelectric element according to any one of claims 1 to 5, wherein the second substrate is a copper substrate.

7. The thermoelectric element according to claim 1 , further comprising a first insulating layer disposed between the first substrate and the first buffer layer.

8. The thermoelectric element according to any one of claims 1 to 7, wherein the second buffer layer has a thickness greater than a thickness of the first buffer layer.

9. The thermoelectric element according to any one of claims 1 to 8, wherein the first buffer layer has a Young's modulus change rate of 10% or less at 150°C to 200°C for 500 hours.

10. The thermoelectric element of claim 7 , wherein the first insulating layer comprises aluminum oxide or a composite containing silicon and aluminum.

11. The thermoelectric element according to claim 7 , wherein the surface roughness (Ra) of the first insulating layer is 0.1 μm or more.

12. a second insulating layer disposed between the second substrate and the second buffer layer; The thermoelectric element according to any one of claims 1 to 11, wherein the second insulating layer is selected from an aluminum oxide layer, a composite layer made of a composite containing silicon and aluminum, and a resin layer made of a resin composition containing at least one of an epoxy resin and a silicone resin and an inorganic substance.

13. The thermoelectric element according to claim 12 , wherein a portion of a side surface of the second electrode is buried in the second buffer layer.

14. The thermoelectric element according to any one of claims 1 to 13, further comprising a heat sink disposed on the second substrate.

15. A thermoelectric element according to any one of claims 1 to 14. A first fluid flowing on the first substrate side of the thermoelectric element; a second fluid that flows on the second substrate side of the thermoelectric element and has a temperature 95° C. to 185° C. higher than that of the first fluid; A power generation system, wherein the resistance change rate of the thermoelectric element is within 7% for 500 hours.

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