Composition for resist underlayer film and method for forming pattern using same

Abstract

A resist underlayer film composition comprising a polymer having a ring skeleton containing two or more nitrogen atoms in the ring, a compound represented by the following chemical formula 1, and a solvent; and a pattern formation method using the resist underlayer film composition: JPEG2023549846000036.jpg50151 The definition of Chemical Formula 1 is as described in the specification.

Description

[Technical field]

[0001] The present description relates to a composition for a resist underlayer film and a pattern forming method using the same. [Background technology]

[0002] Recently, the semiconductor industry has been evolving from patterns of several hundreds of nanometers to ultrafine technology with patterns of several to tens of nanometers. To realize such ultrafine technology, effective lithographic methods are essential.

[0003] Lithographic techniques are a processing method in which a thin film is formed by coating a photoresist film on a semiconductor substrate such as a silicon wafer, and then the thin film is exposed to activating radiation such as ultraviolet light through a mask pattern on which a device pattern is drawn, and then developed. The resulting photoresist pattern is used as a protective film to etch the substrate, thereby forming a fine pattern on the substrate surface that corresponds to the pattern.

[0004] The exposure process performed in the photoresist pattern formation step is one of the important factors for obtaining a high-resolution photoresist image.

[0005] With the demand for ultra-fine pattern manufacturing technology, short wavelengths such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), and ArF excimer laser (wavelength 193 nm) are being used as activating radiation for exposing photoresist. As a result, in order to solve problems caused by diffuse reflection and standing waves of activating radiation from semiconductor substrates, many studies are being conducted to solve the problems by interposing a resist underlayer having an optimized reflectance between the resist and the semiconductor substrate.

[0006] Meanwhile, in addition to the activating radiation, high energy rays such as EUV (Extreme ultraviolet; wavelength 13.5 nm) and E-Beam (electron beam) are also used as light sources for manufacturing fine patterns, and although these light sources are hardly reflected from the substrate, the thickness of the resist underlayer film must be further reduced as the pattern becomes finer, and research is being conducted to improve the adhesion between the resist and the underlayer film in order to improve the collapse of the formed pattern. Also, research is being conducted to improve the sensitivity through the underlayer film in order to maximize the efficiency of the light source. Summary of the Invention [Problem to be solved by the invention]

[0007] Provided is a composition for a resist underlayer film that can reduce the etching process time by forming an ultra-thin film without causing resist pattern collapse even in a fine patterning process, and can improve coating uniformity, gap fill characteristics, and resist pattern formability by improving crosslinking characteristics.

[0008] Another embodiment provides a pattern forming method using the resist underlayer film composition. [Means for solving the problem]

[0009] A composition for a resist underlayer film according to one embodiment includes a polymer having a ring skeleton containing two or more nitrogen atoms in the ring, a compound represented by the following Chemical Formula 1, and a solvent:

[0010] [ka]

[0011] In the above Chemical Formula 1, L 1 ~L 4 , and L 5 ~L 8are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, a C1 to C10 alkyl group, a C3 to C6 cycloalkyl group, a halogen group, a cyano group, an amino group, an epoxy group, a C1 to C10 alkoxy group, or a combination thereof, n and m are each independently an integer of 0 to 5, and * is a linking point), or a combination thereof; R 1 ~R 4 each independently represents a substituted or unsubstituted C1 to C10 aliphatic saturated or unsaturated hydrocarbon group, a substituted or unsubstituted C3 to C10 alicyclic saturated or unsaturated hydrocarbon group, a substituted or unsubstituted C2 to C10 saturated or unsaturated alicyclic heterohydrocarbon group, a substituted or unsubstituted C6 to C30 aromatic group, a substituted or unsubstituted C2 to C30 heteroaromatic group, a substituted or unsubstituted C1 to C10 alkoxy group, or a combination thereof, L 5 ~L 8 are all single bonds or all unsubstituted C1-C10 alkylene groups, R 1 ~R 4 are all substituted or unsubstituted C1-C10 aliphatic saturated or unsaturated hydrocarbon groups, or R 1 ~R 4 are not all substituted or unsubstituted C1-C2 alkoxy groups.

[0012] R 5 and R 6 are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2 to C10 alkynyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C1 to C10 heteroalkenyl group, a substituted or unsubstituted C1 to C10 heteroalkynyl group, or a combination thereof.

[0013] L of the above Chemical Formula 1 1 ~L 4 , and L 5 ~L 8 are each independently a single bond, a substituted or unsubstituted C1-C10 alkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, a C1-C10 alkyl group, a C3-C6 cycloalkyl group, or a combination thereof, n and m are each independently an integer of 0 to 3, and * is a connection point), or a combination thereof; R 1 ~R 4 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group containing one or more double bonds, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, or a combination thereof.

[0014] The compound represented by Chemical Formula 1 may include one or more of the compounds represented by Chemical Formulas 4 to 11 below.

[0015] [ka]

[0016] [ka]

[0017] The polymer having a ring skeleton containing two or more nitrogen atoms in the ring can include at least one structure of the following chemical formulas A-1 to A-4.

[0018] [ka]

[0019] In the chemical formulae A-1 to A-4, R x and R y are each independently a hydrogen atom, a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; * indicates a linking point in the polymer.

[0020] The polymer may include a structural unit represented by the following Formula 2, a structural unit represented by the following Formula 3, or a combination thereof.

[0021] [ka]

[0022] In the above Chemical Formula 2 and Chemical Formula 3, A is a ring group containing two or more nitrogen atoms in the ring, R c , R d and R eare each independently a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; L 9 ~L 14 each independently represents a single bond, a substituted or unsubstituted C1-C10 alkylene group, a substituted or unsubstituted C1-C10 heteroalkylene group, a substituted or unsubstituted C3-C20 cycloalkylene group, a substituted or unsubstituted C2-C20 heterocycloalkylene group, a substituted or unsubstituted C6-C20 arylene group, a substituted or unsubstituted C1-C20 heteroarylene group, or a combination thereof; X 1 ~X 5 are each independently a single bond, -O-, -S-, -S(=O)-, -S(=O)2-, -C(=O)-, -(CO)O-, -O(CO)O-, -NR''''- (wherein R'''' is hydrogen, deuterium, or a C1 to C10 alkyl group), or a combination thereof; * indicates the point of attachment to the polymer main chain or end group, respectively.

[0023] In the above Chemical Formula 2 and Chemical Formula 3, R c , R d and R e are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, or a combination thereof; L 9 ~L 13are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, or a combination thereof; X 1 ~X 5 may each independently be a single bond, -O-, -S-, or a combination thereof.

[0024] A in the chemical formula 2 and the chemical formula 3 may be represented by at least one of the chemical formulas A-1 to A-4; In the chemical formula A-1 and the chemical formula A-4, * denotes L in Chemical Formula 2 and Chemical Formula 3, respectively. 9 ~L 14 or the point at which it is connected to a side chain of the polymer.

[0025] The polymer may include any one of structural units represented by the following formulas 12 to 21:

[0026] [ka]

[0027] [ka]

[0028] In the above Chemical Formulae 12 to 21, * indicates the point of attachment to the polymer main chain, side chain or end group.

[0029] The compound represented by Chemical Formula 1 is included in an amount of 0.01% by weight to 5% by weight based on the total weight of the composition for resist underlayer film.

[0030] The weight average molecular weight of the polymer may be from 2,000 g / mol to 300,000 g / mol.

[0031] The composition may further include one or more polymers selected from acrylic-based resins, epoxy-based resins, novolac-based resins, glycoluril-based resins, and melamine-based resins.

[0032] The composition may further include additives including a surfactant, a thermal acid generator, a plasticizer, a photoacid generator, a crosslinker, or a combination thereof.

[0033] Another embodiment is forming a film to be etched on a substrate; applying a composition for a resist underlayer film according to an embodiment to the film to be etched to form a resist underlayer film; forming a photoresist pattern on the resist underlayer film; sequentially etching the resist underlayer film and the film to be etched using the photoresist pattern as an etching mask; The present invention provides a pattern forming method comprising the steps of:

[0034] The step of forming a photoresist pattern includes: forming a photoresist film on the resist underlayer film; exposing the photoresist film to light; and developing the photoresist film.

[0035] The step of forming the resist underlayer film may include a step of performing a heat treatment at a temperature of 100° C. to 500° C. after coating the composition for the resist underlayer film. Effect of the Invention

[0036] The composition for a resist underlayer film according to an embodiment can form an ultrathin film at a specific wavelength such as EUV, and can provide a resist underlayer film having excellent coating properties, planarization properties, and gap-fill properties and improved crosslinking properties. Therefore, the composition for a resist underlayer film according to an embodiment or a resist underlayer film manufactured therefrom can be advantageously used in forming a fine pattern of a photoresist using a high-energy light source such as EUV. [Brief description of the drawings]

[0037] [Figure 1] FIG. 1 is a cross-sectional view illustrating a pattern forming method using a resist underlayer film composition according to one embodiment. [Diagram 2] FIG. 1 is a cross-sectional view illustrating a pattern forming method using a resist underlayer film composition according to one embodiment. [Diagram 3] FIG. 1 is a cross-sectional view illustrating a pattern forming method using a resist underlayer film composition according to one embodiment. [Figure 4] FIG. 1 is a cross-sectional view illustrating a pattern forming method using a resist underlayer film composition according to one embodiment. [Diagram 5] FIG. 1 is a cross-sectional view illustrating a pattern forming method using a resist underlayer film composition according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0038] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to exemplary embodiments thereof so that those skilled in the art can easily practice the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

[0039] In the drawings, the thickness of the various layers and regions has been exaggerated for clarity, and like parts are designated by the same reference numbers throughout the specification.

[0040] When a part such as a layer, film, region, or plate is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part between them. Conversely, when a part is said to be "directly on" another part, it means that there is no other part between them.

[0041] In this specification, unless otherwise defined, "substituted" means that a hydrogen atom in a compound is replaced with a halogen atom (F, Br, Cl, or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a vinyl group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C3-C4 alkyl group, a C4-C5 alkyl group, a C5-C6 alkyl group, a C6-C7 alkyl group, a C7-C8 alkyl group, a C8-C9 alkyl group, a C9-C10 alkyl group, a C10-C10 alkyl group, a C10-C10 alkyl group, a C10-C10 alkyl group, a C20-C10 alkenyl group, a C20-C10 alkyl ... alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C10 alkyl group, a C20-C1 It means that the alkyl group is substituted with a substituent selected from a C2-C20 alkynyl group, a C6-C30 aryl group, a C7-C30 arylalkyl group, a C6-C30 allyl group, a C1-C30 alkoxy group, a C1-C20 heteroalkyl group, a C3-C20 heteroarylalkyl group, a C3-C30 cycloalkyl group, a C3-C15 cycloalkenyl group, a C6-C15 cycloalkynyl group, a C3-C30 heterocycloalkyl group, and combinations thereof.

[0042] In addition, in this specification, unless otherwise defined, the term "hetero" refers to a group containing 1 to 10 heteroatoms independently selected from N, O, S and P.

[0043] In this specification, unless otherwise specified, the weight average molecular weight is measured by dissolving a powder sample in tetrahydrofuran (THF) and then using Agilent Technologies' 1200 series gel permeation chromatography (GPC) (using a Shodex LF-804 column and Shodex polystyrene as the standard sample).

[0044] Also, in this specification, unless otherwise defined, "*" refers to a structural unit of a compound or a point of attachment of a moiety of a compound.

[0045] Hereinafter, a composition for a resist underlayer film according to one embodiment will be described.

[0046] The present invention relates to a composition for a resist underlayer film that can prevent collapse of a resist pattern during a fine pattern formation process of photolithography using a short wavelength light source such as an ArF excimer laser (wavelength 193 nm) or a high energy ray such as EUV (Extreme ultraviolet; wavelength 13.5 nm), can be applied to an ultra-thin film to shorten an etching process time, and can improve crosslinking properties to improve coating uniformity, gap fill properties, and surface properties of a resist film, and a method for forming a photoresist pattern using the same.

[0047] Specifically, a composition for a resist underlayer film according to one embodiment includes a polymer having a cyanurate skeleton or a triazine skeleton in the main chain, the side chain, or both the main chain and the side chain of the polymer, a compound represented by the following Chemical Formula 1, and a solvent.

[0048] [ka]

[0049] In the above Chemical Formula 1, L 1 ~L 4 , and L 5 ~L 8are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, a C1 to C10 alkyl group, a C3 to C6 cycloalkyl group, a halogen group, a cyano group, an amino group, an epoxy group, a C1 to C10 alkoxy group, or a combination thereof, n and m are each independently an integer of 0 to 5, and * is a linking point), or a combination thereof; R 1 ~R 4 each independently represents a substituted or unsubstituted C1 to C10 aliphatic saturated or unsaturated hydrocarbon group, a substituted or unsubstituted C3 to C10 alicyclic saturated or unsaturated hydrocarbon group, a substituted or unsubstituted C2 to C10 saturated or unsaturated alicyclic heterohydrocarbon group, a substituted or unsubstituted C6 to C30 aromatic group, a substituted or unsubstituted C2 to C30 heteroaromatic group, a substituted or unsubstituted C1 to C10 alkoxy group, or a combination thereof, L 5 ~L 8 are all single bonds or all unsubstituted C1-C10 alkylene groups, R 1 ~R 4 are all substituted or unsubstituted C1-C10 aliphatic saturated or unsaturated hydrocarbon groups, or R 1 ~R 4 are not all substituted or unsubstituted C1-C2 alkoxy groups, R 5 ~R 6 are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2 to C10 alkynyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C1 to C10 heteroalkenyl group, a substituted or unsubstituted C1 to C10 heteroalkynyl group, or a combination thereof.

[0050] The composition according to one embodiment of the present invention is applied under the photoresist to form a film, and the adhesion between the film and the photoresist is improved, so that the collapse of the resist pattern can be prevented even during the fine patterning process, and the crosslinking characteristics of the composition for the resist underlayer film can be adjusted to improve the coating uniformity, gap fill, and resist pattern formability. In addition, the composition can be used to form an ultra-thin underlayer film, which is advantageous in that the etching process time can be shortened.

[0051] The compound represented by Chemical Formula 1 contained in the composition is a compound rich in intramolecular unshared electron pairs by including oxygen and nitrogen contained in the glycoluril core and four oxygen atoms connected to each nitrogen atom of the glycoluril core, and therefore the portion where the four oxygen atoms connected to the nitrogen atom are connected can act as a cross-linking site with other compounds or functional groups. Therefore, the compound represented by Chemical Formula 1 plays a role in cross-linking between the polymers in the composition according to one embodiment, and thus the film produced from the composition has a denser structure, and thus the adhesion between the film and the photoresist is improved, and thus the collapse of the resist pattern can be prevented even during the fine patterning process.

[0052] Furthermore, the saturated or unsaturated aliphatic hydrocarbon group, saturated or unsaturated alicyclic hydrocarbon group, saturated or unsaturated alicyclic heterohydrocarbon group, aromatic group, heteroaromatic group, etc., bonded to the oxygen atom imparts hydrophobic properties to the compound, thereby improving the coatability and increasing the etch rate of the composition according to one embodiment including the compound.

[0053] In one embodiment, L in Formula 1 1 ~L 4 , and L 5 ~L 8are each independently a single bond, a substituted or unsubstituted C1-C10 alkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, a C1-C10 alkyl group, a C3-C6 cycloalkyl group, or a combination thereof, n and m are each independently an integer of 0 to 3, and * is a connection point), or a combination thereof; R 1 ~R 4 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group containing one or more double bonds, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, or a combination thereof; R 5 ~R 6 may each independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, a substituted or unsubstituted C1 to C10 heteroalkenyl group, or a combination thereof.

[0054] Specifically, L in the above Chemical Formula 1 1 ~L 4 are each independently a substituted or unsubstituted C1 to C10 alkylene group, L 5 ~L 8 are each independently a single bond, a substituted or unsubstituted C1-C10 alkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, or a C1-C10 alkyl group, n and m are each independently an integer of 0 to 2, and * is a connection point), or a combination thereof; R 1 ~R 4are each independently a C1 to C10 alkyl group, a C2 to C5 alkenyl group containing one double bond at the terminal, a C3 to C6 cycloalkyl group, a substituted or unsubstituted C1 to C6 alkoxy group, or a combination thereof; R 5 ~R 6 may each independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C5 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C1 to C5 heteroalkyl group, or a combination thereof.

[0055] For example, L in Formula 1 1 ~L 4 are each independently a C1-C4 alkylene group, L 5 ~L 8 are each independently a single bond, a substituted or unsubstituted C1-C4 alkylene group, *-(CRR')nO-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, or a C1-C4 alkyl group, n and m are each independently an integer of 0 to 2, and * is a linking point), or a combination thereof; R 1 ~R 4 are each independently a C1 to C6 alkyl group, a C2 to C5 alkenyl group containing one double bond at the terminal, a C3 to C6 cycloalkyl group, a C1 to C6 alkoxy group, or a combination thereof; R 5 ~R 6 may each independently be hydrogen, deuterium, a substituted or unsubstituted C1-C6 alkyl group, a substituted or unsubstituted C1-C5 heteroalkyl group, or a combination thereof, for example, hydrogen or a methyl group.

[0056] L of the above Chemical Formula 1 1 ~L 4 are each independently a C1-C4 alkylene group; L 5 ~L 8 If one or more of the is a single bond, L5 ~L 8 The group that is not a single bond may be *-(CRR')nO-(CR"R"')m-* or *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, or a C1-C4 alkyl group, n and m are each independently an integer of 0 to 2, and * is a linking point).

[0057] L of the above Chemical Formula 1 1 ~L 4 are each a C1-C4 alkylene group, and L 5 ~L 8 If all are single bonds, R 1 ~R 4 may each independently be a C3 to C6 cycloalkyl group, for example, a cyclohexyl group.

[0058] In one embodiment, L in Formula 1 1 ~L 4 may each be a methylene or ethylene group, e.g., a methylene group, and L 5 ~L 8 may each be a single bond, or a *-CRR'-C(=O)-* or *-(CRR')nO-(CR"R"')m-* (wherein R, R', R", and R"' may each independently be hydrogen, a methyl group, or an ethyl group, n and m are each independently an integer from 0 to 1, and * is a connection point), where R 1 ~R 4 can include a methyl group, an ethyl group, a propyl group, a butyl group, a cyclohexyl group, an allyl group, a vinyl group, a C1-C6 alkoxy group, or a combination thereof.

[0059] The compound represented by the formula 1 is L 1 ~L 4 If all are methylene, L 5 ~L 8 are all single bonds and R 1 ~R 4 are all unsubstituted alkyl groups, R 1 ~R4 are all unsubstituted aryl groups, or R 1 ~R 4 are not all unsubstituted alkoxy groups.

[0060] For example, the compound represented by Chemical Formula 1 may include one or more of the compounds represented by Chemical Formulas 4 to 11 below.

[0061] [ka]

[0062] [ka]

[0063] In one embodiment of the composition, the polymer having a ring skeleton containing two or more nitrogen atoms in the ring may include at least one structure of the following chemical formulae A-1 to A-4, specifically, may include the main chain, the side chain, or both the main chain and the side chain of the polymer.

[0064] [ka]

[0065] In the chemical formulae A-1 to A-4, R x and R yare each independently a hydrogen atom, a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; * indicates a linking point in the polymer.

[0066] In one embodiment of the composition, the polymer having a ring skeleton containing two or more nitrogen atoms in the ring may include a structural unit represented by the following Chemical Formula 2, a structural unit represented by the following Chemical Formula 3, or a combination thereof:

[0067] [ka]

[0068] In the above Chemical Formula 2 and Chemical Formula 3, A is a ring group containing a cyanurate skeleton or a triazine skeleton, R c , R d and R e are each independently a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; L 9 ~L 14 each independently represents a single bond, a substituted or unsubstituted C1-C10 alkylene group, a substituted or unsubstituted C1-C10 heteroalkylene group, a substituted or unsubstituted C3-C20 cycloalkylene group, a substituted or unsubstituted C2-C20 heterocycloalkylene group, a substituted or unsubstituted C6-C20 arylene group, a substituted or unsubstituted C1-C20 heteroarylene group, or a combination thereof; X 1 ~X 5 are each independently a single bond, -O-, -S-, -S(=O)-, -S(=O)2-, -C(=O)-, -(CO)O-, -O(CO)O-, -NR''''- (wherein R'''' is hydrogen, deuterium, or a C1 to C10 alkyl group), or a combination thereof; * indicates the point of attachment to the polymer main chain or end group, respectively.

[0069] A in the above Chemical Formula 2 and Chemical Formula 3 may be represented by at least one of the above Chemical Formulas A-1 to A-4: The polymer contains a ring skeleton containing two or more nitrogen atoms in the ring within the structure, and thus the etching rate of the resist underlayer film composition can be increased and the coating properties can be improved.

[0070] In addition, since the polymer is stable to organic solvents and heat, when a resist underlayer film is formed using a composition for a resist underlayer film including the polymer, peeling due to solvents or heat during a process for forming a photoresist pattern or generation of by-products due to generation of chemicals can be minimized, and thickness loss due to the upper photoresist solvent can also be minimized.

[0071] Therefore, the resist underlayer film composition according to one embodiment includes the compound represented by Formula 1, thereby improving crosslinking properties, and also includes the polymer, thereby exhibiting affinity with a solvent and therefore excellent coating properties and film formability. As a result, adhesion to an upper resist is improved, and a resist underlayer film having excellent coating uniformity and gap fill properties is manufactured. Such a resist underlayer film can also improve patterning performance by improving light absorption efficiency for an exposure light source.

[0072] In the above Chemical Formula 2 and Chemical Formula 3, R c , R d and R e are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 heteroalkyl group, or a combination thereof; L 9 ~L 13 are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, a substituted or unsubstituted C1 to C10 heteroalkylene group, or a combination thereof; X 1 ~X 5 may each independently be a single bond, -O-, -S-, or a combination thereof.

[0073] In the above Chemical Formula 2 and Chemical Formula 3, R c , R d and R e are each independently a C1-C6 alkyl group which is either unsubstituted or substituted with a hydroxy group at the terminal, L 9 ~L 13 are each independently a single bond, a substituted or unsubstituted C1 to C6 alkylene group, or a combination thereof, X 1 ~X 5 may each independently be a single bond or -S-.

[0074] The polymer may include any one of structural units represented by the following formulas 12 to 21:

[0075] [ka]

[0076] [ka]

[0077] In the above Chemical Formulae 12 to 21, * indicates the point of attachment to the polymer main chain, side chain or end group.

[0078] The compound represented by Chemical Formula 1 is included in an amount of 0.001 to 5 wt %, for example, 0.01 to 3 wt %, for example, 0.01 to 1 wt %, based on the total weight of the composition for resist underlayer film. By being included in this range, the crosslinking speed during the formation of the resist underlayer film can be controlled, and the thickness, surface roughness, and flattening degree of the resist underlayer film can be controlled.

[0079] Meanwhile, the polymer may have a weight average molecular weight (Mw) of 2,000 g / mol to 300,000 g / mol. For example, the polymer may have a weight average molecular weight of 3,000 g / mol to 100,000 g / mol, or 3,000 g / mol to 50,000 g / mol. By having a weight average molecular weight in this range, the carbon content and solubility in a solvent of the composition for resist underlayer film containing the polymer can be adjusted and optimized.

[0080] The solvent is not particularly limited as long as it has sufficient solubility or dispersibility in the polymer, and may include, for example, propylene glycol, propylene glycol diacetate, propylene glycol methyl ether acetate, methoxypropanediol, diethylene glycol, diethylene glycol butyl ether, tri(ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, gamma-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, methylpyrrolidone, methylpyrrolidinone, methyl 2-hydroxyisobutyrate, acetylacetone, ethyl 3-ethoxypropionate, or a combination thereof.

[0081] In addition, the resist underlayer film composition may further include one or more other polymers selected from the group consisting of an acrylic resin, an epoxy resin, a novolac resin, a glycoluril resin, and a melamine resin, in addition to the above-mentioned polymers, but is not limited thereto.

[0082] The resist underlayer film composition may further include an additive such as a surfactant, a thermal acid generator, a photoacid generator, a plasticizer, or a combination thereof.

[0083] The surfactant may be used to improve coating defects caused by an increase in solid content during the formation of a resist underlayer film, and examples of the surfactant include, but are not limited to, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, and quaternary ammonium salt.

[0084] The thermal acid generator may be, for example, an acidic compound such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonate, salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid, or / and an organic sulfonic acid alkyl ester such as benzoin tosylate, 2-nitrobenzyl tosylate, or the like, but is not limited thereto.

[0085] The plasticizer is not particularly limited, and various known plasticizers can be used. Examples of the plasticizer include low molecular weight compounds such as phthalates, adipic esters, phosphates, trimellitates, and citrates, polyether-based, polyester-based, and polyacetal-based compounds.

[0086] The additive is contained in an amount of 0.0001 to 40 parts by weight based on 100 parts by weight of the composition for a resist underlayer film. By containing the additive in the above range, the solubility of the composition for a resist underlayer film can be improved without changing the optical properties of the composition for a resist underlayer film.

[0087] According to yet another embodiment, there is provided a resist underlayer film produced using the above-mentioned composition for a resist underlayer film. The resist underlayer film may be in a form obtained by, for example, coating the composition for a resist underlayer film on a substrate and then curing the composition through a heat treatment process.

[0088] Hereinafter, a method for forming a pattern using the above-mentioned composition for a resist underlayer film will be described with reference to FIGS.

[0089] 1 to 5 are cross-sectional views illustrating a pattern forming method using a resist underlayer film composition according to the present invention.

[0090] Referring to FIG. 1, first, an object to be etched is prepared. An example of the object to be etched may be a thin film 102 formed on a semiconductor substrate 100. Hereinafter, only the case where the object to be etched is the thin film 102 will be described. In order to remove contaminants remaining on the thin film 102, the surface of the thin film 102 is pre-cleaned. The thin film 102 may be, for example, a silicon nitride film, a polysilicon film, or a silicon oxide film.

[0091] Next, a composition for a resist underlayer film, which includes a polymer having moieties represented by Formulae 1 and 2 and a solvent, is coated on the cleaned surface of the thin film 102 by spin coating.

[0092] Thereafter, drying and baking processes are performed to form a resist underlayer film 104 on the thin film. The baking process is performed at 100° C. to 500° C., for example, 100° C. to 300° C. A more specific description of the composition for resist underlayer film has been given above in detail, and therefore will be omitted to avoid duplication.

[0093] Referring to FIG. 2, a photoresist is coated on the resist underlayer 104 to form a photoresist film 106 .

[0094] Examples of the photoresist include a positive photoresist containing a naphthoquinone diazide compound and a novolak resin, a chemically amplified positive photoresist containing an acid generator capable of dissociating an acid upon exposure, a compound that decomposes in the presence of an acid to increase its solubility in an alkaline aqueous solution, and an alkali-soluble resin, and a chemically amplified positive photoresist containing an acid generator and an alkali-soluble resin having a group capable of providing a resin that decomposes in the presence of an acid to increase its solubility in an alkaline aqueous solution.

[0095] Next, a first baking process is performed to heat the substrate 100 on which the photoresist film 106 is formed. The first baking process can be performed at a temperature of 90°C to 120°C.

[0096] Referring to FIG. 3, the photoresist film 106 is selectively exposed to light.

[0097] As an example of an exposure process for exposing the photoresist film 106, an exposure mask having a predetermined pattern formed thereon is placed on a mask stage of an exposure tool, and the exposure mask 110 is aligned on the photoresist film 106. Next, light is irradiated onto the mask 110, so that predetermined portions of the photoresist film 106 formed on the substrate 100 selectively react with the light transmitted through the exposure mask.

[0098] As an example, examples of light that can be used in the exposure process include short wavelength light such as an activation radiation i-line having a wavelength of 365 nm, a KrF excimer laser having a wavelength of 248 nm, and an ArF excimer laser having a wavelength of 193 nm, as well as EUV (Extreme ultraviolet) having a wavelength of 13.5 nm, which corresponds to extreme ultraviolet light.

[0099] The exposed portion of the photoresist film 106a is relatively more hydrophilic than the unexposed portion of the photoresist film 106b, and therefore the exposed portion of the photoresist film 106a and the unexposed portion of the photoresist film 106b have different solubilities.

[0100] Next, a second baking process is performed on the substrate 100. The second baking process can be performed at a temperature of 90° C. to 150° C. By performing the second baking process, the photoresist film corresponding to the exposed region becomes easily dissolved in a specific solvent.

[0101] 4, the photoresist film 106a corresponding to the exposed region is dissolved using a developer and then removed to form a photoresist pattern 108. Specifically, the photoresist film corresponding to the exposed region is dissolved using a developer such as tetra-methyl ammonium hydroxide (TMAH) and then removed to complete the photoresist pattern 108.

[0102] Next, the resist underlayer film is etched using the photoresist pattern 108 as an etching mask. Through this etching process, an organic film pattern 112 is formed. The etching may be performed, for example, by dry etching using an etching gas, and the etching gas may be, for example, CHF3, CF4, Cl2, O2, or a mixture thereof. As described above, the resist underlayer film formed using the resist underlayer film composition according to an embodiment has a high etching rate, and therefore, a smooth etching process can be performed within a short time.

[0103] 5, the photoresist pattern 108 is used as an etching mask to etch the exposed thin film 102. As a result, the thin film is formed as a thin film pattern 114. The thin film pattern 114 formed by the previous exposure process using a short wavelength light source such as an activation radiation i-line (wavelength 365 nm), a KrF excimer laser (wavelength 248 nm), or an ArF excimer laser (wavelength 193 nm) may have a width of several tens to several hundreds of nm, and the thin film pattern 114 formed by the exposure process using an EUV light source may have a width of 20 nm or less.

[0104] The present invention will be described in more detail below with reference to examples of synthesis of the above-mentioned polymer and preparation of a composition for a resist underlayer film containing the same. However, the present invention is not technically limited to the following examples.

[0105] Synthesis Example Synthesis Example 1 In a 500mL 2-neck round-bottom flask equipped with a condenser, 1g of p-toluene sulfonic acid (PTSA), 30g of 1,3,4,6-tetrakis(methoxymethyl)glycoluril (TMGU) and 300g of ethyl lactate were added and reacted at 80°C for 10 hours. After the reaction, the reaction solution was cooled to room temperature. After the solvent in the reaction solution was partially concentrated using an evaporator, the PTSA was removed by working up twice with ethyl acetate / DIW. After the work-up was completed, column purification was carried out to finally obtain the compound represented by the following chemical formula 4.

[0106] [ka]

[0107] Synthesis Example 2 A compound represented by the following Chemical Formula 5 was obtained in the same manner as in Synthesis Example 1, except that methyl 2-hydroxy-2-methylpropanoate was used instead of ethyl lactate.

[0108] [ka]

[0109] Synthesis Example 3 A compound represented by the following formula 6 was obtained in the same manner as in Synthesis Example 1, except that cyclohexanol was used instead of ethyl lactate.

[0110] [ka]

[0111] Synthesis Example 4 A compound represented by the following chemical formula 7 was obtained in the same manner as in Synthesis Example 1, except that ethylene glycol butyl ether was used instead of ethyl lactate.

[0112] [ka]

[0113] Synthesis Example 5 A compound represented by the following formula 8 was obtained in the same manner as in Synthesis Example 1, except that 2-allyloxyethanol was used instead of ethyl lactate.

[0114] [ka]

[0115] Synthesis Example 6 A reaction solution is prepared by adding 20g of 1,3-diallyl-5-(2-hydroxyethyl)-isocyanurate, 7.9g of 2,3-dimercapto-1-propanol, 1g of azobisisobutyronitrile (AIBN), and 50g of N,N-dimethylformamide to a 250mL four-neck flask, and a condenser is connected. The reaction solution is heated at 50°C for 5 hours to proceed with the reaction, and then cooled to room temperature. The reaction solution is then stirred in a beaker containing 300g of distilled water, dropped to form a gum, and then dissolved in 30g of tetrahydrofuran (THF). The dissolved resin solution was precipitated in toluene, and monomolecules and low molecular weight compounds were removed, finally obtaining a polymer (Mw=3,700 g / mol) consisting of structural units represented by the following chemical formula 12.

[0116] [ka]

[0117] Synthesis Example 7 A reaction solution was prepared by adding 25g of triallyl isocyanurate, 12g of 2-mercapto-1-ethanol, 0.7g of AIBN, and 55g of N,N-dimethylformamide to a 250mL four-neck flask, and then a condenser was connected. The reaction solution was heated at 80°C for 10 hours to proceed with the reaction, and then the reaction solution was cooled to room temperature. The reaction solution was then stirred and dropped into a beaker containing 300g of distilled water to form a gum, which was then dissolved in 50g of tetrahydrofuran (THF). The dissolved resin solution was precipitated with toluene, and monomolecules and low molecules were removed, and finally a polymer (Mw=13,200g / mol) consisting of a structural unit represented by the following chemical formula 16 was obtained.

[0118] [ka]

[0119] Production of composition for resist underlayer film Example 1 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 7, 0.2 g of the compound prepared in Synthesis Example 1, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of propylene glycol methyl ether (PGME).

[0120] Example 2 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 7, 0.2 g of the compound prepared in Synthesis Example 2, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of propylene glycol methyl ether (PGME).

[0121] Example 3 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 7, 0.2 g of the compound prepared in Synthesis Example 3, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of propylene glycol methyl ether (PGME).

[0122] Example 4 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 6, 0.1 g of the compound prepared in Synthesis Example 1, 0.1 g of the compound prepared in Synthesis Example 4, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of a mixed solvent (mixed volume ratio = 1:1) of propylene glycol methyl ether (PGME) and ethyl lactate (EL).

[0123] Example 5 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 6, 0.2 g of the compound prepared in Synthesis Example 2, 0.1 g of the compound prepared in Synthesis Example 5, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of a mixed solvent (mixed volume ratio = 1:1) of propylene glycol methyl ether (PGME) and ethyl lactate (EL).

[0124] Example 6 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer prepared in Synthesis Example 6, 0.3 g of the compound prepared in Synthesis Example 2, and 0.02 g of pyridinium p-toluenesulfonate in 120 g of a mixed solvent (mixed volume ratio = 1:1) of propylene glycol methyl ether (PGME) and ethyl lactate (EL).

[0125] Comparative Example 1 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer produced in Synthesis Example 6, 0.2 g of a compound represented by the following chemical formula 22 (2,4,6-Tris[bis(methoxymethyl)amino]-1,3,5-triazine; TCI), 2 g of hexamethoxymethylmelamine (TCI), and 0.02 g of pyridinium p-toluenesulfonate in 120 g of a mixed solvent of propylene glycol methyl ether (PGME) and ethyl lactate (EL) (mixing volume ratio = 1:1).

[0126] [ka]

[0127] Comparative Example 2 A composition for a resist underlayer film was prepared by completely dissolving 1 g of the polymer produced in Synthesis Example 7, 0.2 g of a compound represented by the following chemical formula 23 (3,3',5,5'-Tetrakis(methoxymethyl)[1,1'-biphenyl]-4,4'-diol; Merch KGaA), and 0.02 g of pyridinium p-toluenesulfonate in 120 g of a mixed solvent of propylene glycol methyl ether (PGME) and ethyl lactate (EL) (mixed volume ratio = 1:1).

[0128] [ka]

[0129] Coating uniformity evaluation 2 ml of each of the compositions prepared in Examples 1 to 6 and Comparative Example 2 was applied onto an 8-inch wafer, and spin-coated at a main spin speed of 1,500 rpm for 20 seconds using an auto track (TEL's ACT-8), and then cured at 210°C for 90 seconds to form an ultra-thin film with a thickness of 50 Å.

[0130] The coating uniformity was measured by measuring the thickness at 51 points on the horizontal axis, and the results are shown in Table 1 below. The coating uniformity is expressed as the difference (Å) between the maximum and minimum thickness values ​​of the 51 points, and the smaller the value, the better the coating uniformity.

[0131] [Table 1]

[0132] Referring to Table 1, it can be seen that the resist underlayer film compositions according to Examples 1 to 6 have excellent coating uniformity equal to or greater than that of the resist underlayer film composition according to Comparative Example 2.

[0133] Gas generation rate evaluation 2 ml of each of the compositions prepared in Examples 1 to 6 and Comparative Example 1 was applied onto a 4-inch wafer, and spin-coated at 1,500 rpm for 20 seconds using a spin coater (Mikasa). After baking for 2 minutes at 130°C to remove residual solvent, curing was carried out at 210°C for 5 minutes, and the amount of gas generated during curing was measured using a QCM device. The measured amount of gas is shown in Table 2 below, relative to the value in Example 1, with a higher value indicating a greater amount of gas generated.

[0134] [Table 2]

[0135] As shown in Table 2, it can be seen that the amount of gas generated is lower according to the examples of the present invention than in the comparative examples.

[0136] Gap-fill characterization On a wafer having a pattern with a line width of 150 nm and a space width of 60 nm and a height of 220 nm, the resist underlayer film compositions prepared in Examples 3 to 6 and Comparative Examples 1 to 2 were applied to a thickness of 250 nm using a spin coater, and then heated at 120° C. for 50 seconds using a hot plate, and then heated at 250° C. for 1 minute to form a resist underlayer film. The cross section of the resist underlayer film formed was observed with a FE-SEM (Field Emission Scanning Electron Microscope, Hitachi product, product name: S-4300) device, and the thickness of the resist underlayer film formed by spin coating was judged to be "very good" if the difference between the high part (line part) and the low part (space part) was less than 3 nm, "good" if it was 3 to 10 nm, and "poor" if it exceeded 10 nm. The results are shown in Table 3.

[0137] [Table 3]

[0138] Although specific embodiments of the present invention have been described and illustrated above, it is obvious to those skilled in the art that the present invention is not limited to the described embodiments, and that various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, such modifications or variations should not be understood individually from the technical spirit and perspective of the present invention, and the modified embodiments belong to the scope of the claims of the present invention. [Explanation of symbols]

[0139] 100: Substrate 102: Thin film 104: Resist underlayer film 106: Photoresist film 108: Photoresist pattern 110: Mask 112: Organic film pattern 114: Thin film pattern

Claims

1. A composition for a resist underlayer film, comprising a polymer having a ring skeleton containing two or more nitrogen atoms in the ring, a compound represented by the following chemical formula 1, and a solvent: 【Chemistry 1】 In the above Chemical Formula 1, L １ ~L ４ , and L ５ ~L ８ are each independently a single bond, a substituted or unsubstituted C1 to C10 alkylene group, *-(CRR')n-O-(CR"R"')m-*, *-CRR'-C(=O)-* (wherein R, R', R", and R"' are each independently hydrogen, deuterium, a C1 to C10 alkyl group, a C3 to C6 cycloalkyl group, or a combination thereof, n and m are each independently an integer from 0 to 3, and * is a connection point), or a combination thereof; R １ ~R ４ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C10 alkenyl group containing one or more double bonds, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, or a combination thereof; and At least one of L 5 to L 8 is *-CRR'-C(═O)-*, or R １ ~R ４ At least one of the is a substituted or unsubstituted C2-C10 alkenyl group, R ５ ~R ６ are each independently hydrogen, deuterium, a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, or a combination thereof.

2. The composition for a resist underlayer film according to claim 1, wherein the compound represented by Chemical Formula 1 includes one or more compounds selected from the group consisting of compounds represented by Chemical Formulas 4 to 5 and Chemical Formulas 8 to 11 below: 【Chemistry 2】 【Chemistry 3】

3. The composition for a resist underlayer film according to claim 1, wherein the polymer having a ring skeleton containing two or more nitrogen atoms in the ring contains at least one of structures represented by the following chemical formulas A-1 to A-4: 【Chemistry 4】 In the chemical formulas A-1 to A-4, R ｘ and R ｙ are each independently a hydrogen atom, a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; * indicates a linking point in the polymer.

4. The composition for a resist underlayer film according to claim 1 , wherein the polymer contains a structural unit represented by the following Chemical Formula 2, a structural unit represented by the following Chemical Formula 3, or a combination thereof: 【Chemistry 5】 In the above Chemical Formula 2 and Chemical Formula 3, A is a ring group containing two or more nitrogen atoms in the ring, R ｃ , R ｄ and R ｅ are each independently a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C2-C10 alkenyl group, a vinyl group, an allyl group, a substituted or unsubstituted C2-C10 alkynyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, a substituted or unsubstituted C1-C10 heteroalkenyl group, a substituted or unsubstituted C1-C10 heteroalkynyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 heterocycloalkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted C1-C20 heteroaryl group, or a combination thereof; L ９ ~L １４ are each independently a single bond, a substituted or unsubstituted C1-C10 alkylene group, a substituted or unsubstituted C1-C10 heteroalkylene group, a substituted or unsubstituted C3-C20 cycloalkylene group, a substituted or unsubstituted C2-C20 heterocycloalkylene group, a substituted or unsubstituted C6-C20 arylene group, a substituted or unsubstituted C1-C20 heteroarylene group, or a combination thereof; X １ ~X ５ are each independently a single bond, -O-, -S-, -S(=O)-, -S(=O) ２ -, -C(=O)-, -(CO)O-, -O(CO)O-, -NR""-, where R"" is hydrogen, deuterium, or a C1 to C10 alkyl group, or a combination thereof; * indicates the point of attachment to the polymer main chain or end group, respectively.

5. R of Formula 2 and Formula 3 ｃ , R ｄ and R ｅ are each independently a substituted or unsubstituted C1-C10 alkyl group, a substituted or unsubstituted C1-C10 heteroalkyl group, or a combination thereof; L of Formula 2 and Formula 3 ９ ~L １３ are each independently a single bond, a substituted or unsubstituted C1-C10 alkylene group, a substituted or unsubstituted C1-C10 heteroalkylene group, or a combination thereof; X in Formula 2 and Formula 3 １ ~X ５ The resist underlayer film composition according to claim 4, wherein each of the groups independently represents a single bond, -O-, -S-, or a combination thereof.

6. A in the above Chemical Formula 2 and Chemical Formula 3 is represented by at least one of the following Chemical Formulas A-1 to A-2, In the following chemical formula A-1 and the above-mentioned chemical formula A-2, * denotes L in Chemical Formula 2 and Chemical Formula 3, respectively. ９ ~L １０ and L １２ ~L １４ or a site at which the compound is linked to a side chain of a polymer. 【Chemistry 6】

7. The resist underlayer film composition according to claim 1, wherein the polymer contains any one of structural units represented by the following chemical formulas 12 to 21: 【Chemistry 7】 【Chemistry 8】 In the above Chemical Formulas 12 to 21, * indicates the point of attachment to the polymer main chain or end group.

8. The composition for a resist underlayer film according to claim 1, wherein the compound represented by Chemical Formula 1 is contained in an amount of 0.01 wt % to 5 wt % based on the total weight of the composition for a resist underlayer film.

9. 2. The resist underlayer film composition according to claim 1, wherein the weight average molecular weight of the polymer is 2,000 g / mol to 300,000 g / mol.

10. 2. The resist underlayer film composition according to claim 1, further comprising one or more polymers selected from an acrylic resin, an epoxy resin, a novolac resin, a glycoluril resin, and a melamine resin.

11. The resist underlayer film composition according to claim 1 , further comprising an additive comprising a surfactant, a thermal acid generator, a plasticizer, or a combination thereof.

12. forming a film to be etched on a substrate; A step of forming a resist underlayer film by applying the resist underlayer film composition according to any one of claims 1 to 11 onto the film to be etched; forming a photoresist pattern on the resist underlayer film; sequentially etching the resist underlayer film and the film to be etched using the photoresist pattern as an etching mask; A pattern forming method comprising the steps of:

13. The step of forming a photoresist pattern includes: forming a photoresist film on the resist underlayer film; exposing the photoresist film to light; The pattern forming method according to claim 12, further comprising the step of developing the photoresist film.

14. 13. The method of claim 12, wherein the step of forming the resist underlayer film comprises the step of heat-treating the resist underlayer film composition at a temperature of 100° C. to 500° C. after coating the resist underlayer film composition.

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