Display device

Abstract

To provide a display device which exhibits light with high color purity, and to provide a display device with low power consumption.SOLUTION: There is provided a display device which has a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, and a semi-transmissive layer. The light-emitting layer has a first region positioned over the first pixel electrode and a second region positioned over the second pixel electrode. The common electrode is positioned over the light-emitting layer. The first protective layer is positioned over the common electrode. The semi-transmissive layer is positioned over the first protective layer. Reflectivity with respect to visible light of the semi-transmissive layer is higher than reflectivity with respect to visible light of the common electrode. The semi-transmissive layer does not overlap with the first region and overlaps with the second region. For example, the semi-transmissive layer may have an opening in a position overlapping with the first region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (e.g., a touch sensor), an input / output device (e.g., a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs). The larger the display area of ​​a display device, the more information it can provide at one time. In addition, the larger the display area, the more likely it is to catch people's attention, which is expected to increase the advertising effectiveness of advertisements, for example.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. A light-emitting element (also referred to as an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a low-voltage direct current power source, and is applied to a display device.

[0005] Furthermore, applications of organic EL elements to flexible devices are being considered. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0007] When manufacturing a display device capable of full-color display using the side-by-side method (also called the color-by-color method), in which a different light-emitting layer is vapor-deposited on each subpixel of each color, high accuracy (also called alignment accuracy) is required to place the openings of the metal mask at the desired position. In particular, high-definition display devices have a high pixel density and require extremely high alignment accuracy, which leads to problems such as a decrease in yield in the manufacture of display devices and an increase in manufacturing costs. In addition, there is also a problem that the side-by-side method is difficult to adopt for large substrates, as the film is formed in a wider area than the desired area due to bending of the metal mask.

[0008] On the other hand, when manufacturing a display device capable of full color display using a color filter method that combines a white-emitting light-emitting element and a color filter, the process of depositing different light-emitting layers on the subpixels of each color is not necessary. Therefore, high-definition display devices and large display devices can be manufactured with high productivity. On the other hand, since a common light-emitting layer is formed on the subpixels of each color, the light emitted by each subpixel contains not only light of the desired color but also light of other colors. Therefore, the color filter method has problems such as a tendency for the color purity of light to be low and poor light utilization efficiency compared to the side-by-side method.

[0009] An object of one embodiment of the present invention is to provide a display device that exhibits light with high color purity.An object of one embodiment of the present invention is to provide a display device with high display quality.An object of one embodiment of the present invention is to provide a display device with high emission efficiency.An object of one embodiment of the present invention is to provide a display device with low power consumption.An object of one embodiment of the present invention is to provide a display device that can be manufactured with a high yield.An object of one embodiment of the present invention is to provide a display device with high definition.An object of one embodiment of the present invention is to provide a display device with a long lifetime.An object of one embodiment of the present invention is to provide a large display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description of the specification, drawings, and claims. [Means for solving the problem]

[0011] A display device according to one embodiment of the present invention includes a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, and a semi-transmitting layer. The light-emitting layer includes a first region located on the first pixel electrode and a second region located on the second pixel electrode. The common electrode is located on the light-emitting layer. The first protective layer is located on the common electrode. The semi-transmitting layer is located on the first protective layer. The semi-transmitting layer has a higher reflectivity to visible light than the common electrode. The semi-transmitting layer does not overlap with the first region, and overlaps with the second region. For example, the semi-transmitting layer may have an opening at a position overlapping with the first region.

[0012] The display device according to one embodiment of the present invention may further include a second protective layer that is in contact with the first protective layer in a region overlapping with the first region and is in contact with the semi-transmitting layer in a region overlapping with the second region.

[0013] Alternatively, the display device of one embodiment of the present invention may further include a conductive layer that transmits visible light and a second protective layer. The conductive layer that transmits visible light is located over the common electrode. The second protective layer is located over the conductive layer that transmits visible light. The conductive layer that transmits visible light has a region in contact with the common electrode, a region in contact with the semi-transmitting layer, a region located between the first protective layer and the second protective layer, and a region located between the first protective layer and the semi-transmitting layer.

[0014] The display device according to one embodiment of the present invention may further include a first optical adjustment layer and a second optical adjustment layer. The first optical adjustment layer is located between the first pixel electrode and the light-emitting layer. The second optical adjustment layer is located between the second pixel electrode and the light-emitting layer. The first pixel electrode and the second pixel electrode each have reflectivity for visible light.

[0015] Alternatively, the display device of one embodiment of the present invention may further include a first reflective layer, a second reflective layer, a first optical adjustment layer, and a second optical adjustment layer. The first optical adjustment layer is located on the first reflective layer. The second optical adjustment layer is located on the second reflective layer. The first pixel electrode is located on the first optical adjustment layer. The second pixel electrode is located on the second optical adjustment layer. The first pixel electrode and the second pixel electrode are each transparent to visible light.

[0016] The display device according to one embodiment of the present invention may further include a colored layer located on the first protective layer and overlapping with the second region.

[0017] The display device according to one embodiment of the present invention may further include a third pixel electrode. The light-emitting layer further includes a third region located on the third pixel electrode. The semi-transmitting layer includes a fourth region overlapping with the second region and a fifth region overlapping with the third region. The thickness of the fourth region is different from the thickness of the fifth region.

[0018] The display device of one embodiment of the present invention may further include a transistor, an insulating layer, a first conductive layer, and a second conductive layer. The first conductive layer and the second conductive layer each include the same material as an electrode of the transistor. The transistor is electrically connected to the first pixel electrode through a first opening in the insulating layer. The common electrode is electrically connected to the first conductive layer through a second opening in the insulating layer. The semi-transmitting layer is electrically connected to the second conductive layer through a third opening in the insulating layer. The third opening is located on the outer side of the display device than the second opening.

[0019] One aspect of the present invention is a module having a display device of any of the above configurations, and having a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a TCP (Tape Carrier Package) attached, or a module having an integrated circuit (IC) mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc.

[0020] One embodiment of the present invention is an electronic device including any of the above modules and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. Effect of the Invention

[0021] According to one embodiment of the present invention, a display device that emits light with high color purity can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a display device with high emission efficiency can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. According to one embodiment of the present invention, a display device that can be manufactured with a high yield can be provided. According to one embodiment of the present invention, a display device with high definition can be provided. According to one embodiment of the present invention, a display device with a long lifetime can be provided. According to one embodiment of the present invention, a large display device can be provided.

[0022] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief description of the drawings]

[0023] [Figure 1] 1(A) to 1(E) are cross-sectional views showing an example of a display device. [Diagram 2] Figures 2(A) and 2(B) are top views showing an example of a pixel, and Figures 2(C) to 2(E) are cross-sectional views showing an example of a display device. [Diagram 3] 3(A) to 3(E) are top views showing an example of a pixel. [Figure 4] 4(A) to 4(C) are cross-sectional views showing an example of a display device. [Diagram 5] Fig. 5(A) is a top view showing an example of a display device, and Fig. 5(B) is a cross-sectional view showing the example of the display device. [Figure 6] Fig. 6(A) is a top view showing an example of a display device, and Fig. 6(B) is a cross-sectional view showing the example of the display device. [Figure 7] FIG. 7 is a cross-sectional view showing an example of a display device. [Figure 8] FIG. 8 is a cross-sectional view showing an example of a display device. [Figure 9] 9(A) and 9(B) are perspective views showing an example of a touch panel. [Figure 10] FIG. 10 is a cross-sectional view showing an example of a touch panel. [Figure 11] 11(A) and 11(B) are cross-sectional views showing an example of a touch panel. [Figure 12] 12(A) and 12(B) are cross-sectional views showing an example of a touch panel. [Figure 13] 13A and 13B are cross-sectional views illustrating an example of a transistor. [Figure 14] FIG. 14 is a cross-sectional view showing an example of a display device. [Figure 15] FIG. 15 is a cross-sectional view showing an example of a display device. [Figure 16] FIG. 16 is a cross-sectional view showing an example of a display device. [Figure 17] FIG. 17 is a cross-sectional view showing an example of a display device. [Figure 18] 18(A) and 18(B) are perspective views showing an example of a display module. [Figure 19] Fig. 19(A) is a block diagram showing an example of a pixel, and Fig. 19(B) is a diagram showing an example of a pixel. [Figure 20] 20A and 20B are timing charts showing an example of the operation of a pixel. [Figure 21] 21(A) to 21(D) are diagrams showing an example of an electronic device. [Figure 22] 22(A) to 22(E) are diagrams showing an example of an electronic device. [Diagram 23] 23(A) to 23(F) are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the repeated explanations are omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be used.

[0026] In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0027] In addition, the words "film" and "layer" can be interchanged depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0028] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0029] The display device according to one embodiment of the present invention is a color filter type display device in which a white light-emitting light-emitting element and a color filter are combined. Therefore, the display device can be easily enlarged and has high definition. In addition, the display device can be manufactured with a high yield.

[0030] A display device according to one embodiment of the present invention has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. The light-emitting element to which a microcavity structure is applied can emit light with high color purity. The light-emitting element to which a microcavity structure is not applied can emit light with high efficiency. For example, each of the subpixels that emit light of red, green, or blue preferably has a light-emitting element to which a microcavity structure is applied. In addition, the subpixel that emits white light preferably has a light-emitting element to which a microcavity structure is not applied. This can increase the light extraction efficiency of both light with high color purity and white light. Therefore, a display device with high display quality and low power consumption can be realized.

[0031] The display device of one embodiment of the present invention has a top emission structure. In a display device with a top emission structure, a transistor, a capacitor, a wiring, and the like can be arranged so as to overlap with a light-emitting region of a light-emitting element, and therefore, compared with a display device with a bottom emission structure, the pixel aperture ratio can be increased and the lifetime of the display device can be extended, which is preferable.

[0032] [Display device overview] FIG. 1A shows a display device having a light-emitting element 110W and a light-emitting element 110a.

[0033] The light emitting element 110W has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112W on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112W, and a common electrode 114 on the EL layer 113.

[0034] The light emitting element 110 a has a pixel electrode 111 on the substrate 101 , an optical adjustment layer 112 a on the pixel electrode 111 , an EL layer 113 on the optical adjustment layer 112 a , and a common electrode 114 on the EL layer 113 .

[0035] One of the pixel electrode 111 and the common electrode 114 functions as an anode, and the other functions as a cathode. When a voltage higher than the threshold voltage of the light-emitting element is applied between the pixel electrode 111 and the common electrode 114, holes are injected from the anode side and electrons are injected from the cathode side into the EL layer 113. The injected electrons and holes recombine in the EL layer 113, causing the light-emitting material contained in the EL layer 113 to emit light.

[0036] The optical adjustment layer 112W and the optical adjustment layer 112a are conductive. An end of the pixel electrode 111, an end of the optical adjustment layer 112W, and an end of the optical adjustment layer 112a are each covered with an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping with the pixel electrode 111. The EL layer 113 has at least a light-emitting layer. The EL layer 113 and the common electrode 114 are each provided across a plurality of light-emitting elements.

[0037] The light emitting element 110a and the light emitting element 110W are covered with a protective layer 115.

[0038] The light emitting element 110a overlaps with a semi-transmitting layer 116 (which can also be called a semi-transmitting / semi-reflective layer) via a protective layer 115. The semi-transmitting layer 116 does not overlap with the light emitting region of the light emitting element 110W (which corresponds to the region of the EL layer 113 that overlaps with the pixel electrode 111 and the optical adjustment layer 112W), but overlaps with the light emitting region of the light emitting element 110a (which corresponds to the region of the EL layer 113 that overlaps with the pixel electrode 111 and the optical adjustment layer 112a).

[0039] The semi-transmitting layer 116 can also be regarded as a component of the light-emitting element 110a. In other words, it can be said that the light-emitting element 110a has the pixel electrode 111 and the semi-transmitting layer 116. It can also be said that the light-emitting element 110a has a microcavity structure. It can also be said that the light-emitting element 110W does not have a microcavity structure.

[0040] A microcavity structure is applied to the light emitting element 110a. By resonating the light emitted by the light emitting layer between the pixel electrode 111 and the semi-transmitting layer 116, the light emitted through the semi-transmitting layer 116 can be strengthened. By adjusting the optical distance between the pixel electrode 111 and the semi-transmitting layer 116, the light extraction efficiency for light of a desired wavelength can be improved. The light emitted by the light emitting element 110a has the intensity of light of a specific wavelength strengthened, and becomes, for example, purple, blue, blue-green, green, yellow-green, yellow, yellow-orange, orange, or red light. Since the intensity of light of a desired wavelength is strengthened, light with high color purity can be obtained from the light emitting element 110a.

[0041] On the other hand, the light emitting element 110W does not have a microcavity structure. The light emitted by the light emitting layer is extracted to the outside without the intensity of light of a specific wavelength being increased by the semi-transmitting layer 116. Therefore, the light emitting element 110W can efficiently extract white light to the outside. By using the light emitting element 110W in a subpixel that emits white light, the power consumption of the display device can be reduced.

[0042] A display device having a light emitting element 110a with a microcavity structure and a light emitting element 110W without a microcavity structure has high light extraction efficiency for both light with high color purity and white light, and therefore can realize a display device with high display quality and low power consumption.

[0043] It is preferable to adjust the optical distance between the pixel electrode 111 and the semi-transmitting layer 116 to be mλ / 2 (m is a natural number) or close to it, where λ is the wavelength of light whose intensity is to be increased.

[0044] The pixel electrode 111 has a higher reflectivity to visible light than the common electrode 114. The pixel electrode 111 can also be called a reflective electrode. The common electrode 114 can also be called a transparent electrode. It is preferable that the semi-transmitting layer 116 has a higher reflectivity to visible light than the common electrode 114 and a lower reflectivity to visible light than the pixel electrode 111.

[0045] For example, the visible light reflectance of the pixel electrode 111 is 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, for example, the visible light reflectance of the semi-transmitting layer 116 is 20% or more and 80% or less, preferably 40% or more and 70% or less. Also, for example, the visible light transmittance of the common electrode 114 is 40% or more. Specifically, it is preferable that the average value of the reflectance or transmittance of light with a wavelength of 400 nm or more and 700 nm or less is within the above range. Alternatively, it is preferable that the reflectance or transmittance of light with a predetermined wavelength of 400 nm or more and 700 nm or less is within the above range.

[0046] By controlling the film thickness of the optical adjustment layer 112a, the optical distance can be adjusted.

[0047] The optical adjustment layer 112a may be made of a conductive film that transmits visible light (transparent conductive film).

[0048] The optical adjustment layer 112a is preferably formed by using an exposure technique that uses a multi-tone mask (half-tone mask, gray-tone mask, etc.), which can reduce the manufacturing cost of the light-emitting element and simplify the manufacturing process.

[0049] In order to equalize the carrier injection property and carrier transport property from the pixel electrode 111 to the EL layer 113 in the plurality of light-emitting elements, the light-emitting element 110W may have an optical adjustment layer (optical adjustment layer 112W) between the pixel electrode 111 and the EL layer 113. The light-emitting element 110W may not have the optical adjustment layer 112W.

[0050] The display device shown in FIG. 1B includes a light-emitting element 110b in addition to the light-emitting element 110W and the light-emitting element 110a.

[0051] The light emitting element 110 b has a pixel electrode 111 on the substrate 101 , an optical adjustment layer 112 b on the pixel electrode 111 , an EL layer 113 on the optical adjustment layer 112 b , and a common electrode 114 on the EL layer 113 .

[0052] Each light emitting element is covered with a protective layer 115 .

[0053] The light emitting element 110a and the light emitting element 110b overlap with the semi-transmitting layer 116a via the protective layer 115. The light emitting element 110b further overlaps with the semi-transmitting layer 116b via the protective layer 115 and the semi-transmitting layer 116a.

[0054] The semi-transmitting layer 116a and the semi-transmitting layer 116b can also be regarded as components of the light-emitting element 110b. That is, the light-emitting element 110b can be said to have the pixel electrode 111, the semi-transmitting layer 116a, and the semi-transmitting layer 116b. Also, the light-emitting element 110b can be said to have a microcavity structure.

[0055] The semi-transmitting layer 116a does not overlap with the light emitting region of the light emitting element 110W but overlaps with the light emitting region of the light emitting element 110a and the light emitting region of the light emitting element 110b. The semi-transmitting layer 116b does not overlap with the light emitting region of the light emitting element 110W or the light emitting region of the light emitting element 110a but overlaps with the light emitting region of the light emitting element 110b.

[0056] A microcavity structure is applied to each of the light emitting elements 110a and 110b. The optical adjustment layers 112a and 112b are layers having different thicknesses. As a result, the optical distance between the pixel electrode 111 and the semi-transmitting layer 116 is different between the light emitting elements 110a and 110b. The light emitted by the light emitting elements 110a and 110b has the intensity of light of a specific wavelength enhanced, and becomes light of a different color. Since the intensity of light of a desired wavelength is enhanced, light with high color purity can be obtained from each of the light emitting elements 110a and 110b.

[0057] The thickness of the semi-transmitting layer overlapping the light-emitting region is different between the light-emitting element 110a and the light-emitting element 110b. Specifically, the light-emitting region of the light-emitting element 110b is overlapped with the semi-transmitting layer 116b in addition to the semi-transmitting layer 116a, so that the amount of light reflected by the semi-transmitting layer increases, and the intensity of light of a specific wavelength becomes stronger. As a result, the light-emitting element 110b can obtain light with particularly high color purity.

[0058] In this way, by varying one or both of the thickness and material of the semi-transmitting layer for each color subpixel, the level of reflectivity of the semi-transmitting layer for visible light can be changed, thereby changing the degree to which the light intensity is increased for each color subpixel.

[0059] Light-emitting element 110W and light-emitting element 110a shown in Fig. 1(C) differ from those in Fig. 1(A) in that the thickness of optical adjustment layer 112W and the thickness of optical adjustment layer 112a are equal (having a thickness L). The thickness of optical adjustment layer 112W and the thickness of optical adjustment layer 112a may be the same or different.

[0060] Since the light emitting element 110W does not overlap with the semi-transmitting layer 116, it does not have a microcavity structure, but as shown in Fig. 1(D), a part of the light 113EM emitted from the EL layer 113 is reflected by the pixel electrode 111, thereby intensifying the light of a specific wavelength. Therefore, it is preferable to set the thickness of the optical adjustment layer 112W according to the wavelength to be intensified, and the thickness of the optical adjustment layer 112W may be equal to the thickness of the optical adjustment layer of the subpixel of the other color.

[0061] For example, when the light 113EM emitted from the light emitting element 110W of the subpixel that exhibits white light is white light with a low color temperature, it is preferable to make the thickness of the optical adjustment layer 112W equal to the thickness of the optical adjustment layer used in the blue subpixel. This enhances the intensity of the blue wavelength of the light 113EM, and allows the light that is transmitted through the common electrode 114 to be closer to white light with a desired color temperature.

[0062] The pixel electrode 111 has reflectivity to visible light. The optical adjustment layer 112a, the optical adjustment layer 112b, the optical adjustment layer 112W, and the common electrode 114 each have transparency to visible light. The semi-transmitting layer 116, the semi-transmitting layer 116a, and the semi-transmitting layer 116b each have both reflectivity to visible light and transparency to visible light. The pixel electrode 111, the optical adjustment layer 112a, the optical adjustment layer 112W, the common electrode 114, the semi-transmitting layer 116, the semi-transmitting layer 116a, and the semi-transmitting layer 116b may each be made of a suitable combination of the following materials so as to satisfy the above-mentioned functions. For example, metals, alloys, electrically conductive compounds, and mixtures thereof may be used as appropriate. Specifically, In-Sn oxide (also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), In-Zn oxide, In-W-Zn oxide, and In-Ga-Zn oxide (also referred to as IGZO) may be used. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. In addition, elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), europium (Eu), ytterbium (Yb), and other rare earth metals, and alloys containing these in appropriate combinations, graphene, and the like can be used.

[0063] A metal having a thickness sufficient to transmit light (for example, a thickness of 1 nm to 30 nm) can be suitably used as the semi-transmitting layer 116. When silver (Ag) or an alloy containing Ag is used as the metal, the reflectance of the semi-transmitting layer 116 is high, and the light-emitting efficiency of the light-emitting element 110a can be increased, which is preferable. In addition, since Ag has a low absorptance of visible light, a film having a thickness sufficient to transmit light can be formed that is both transparent and reflective to visible light.

[0064] When the semi-transparent layer 116 is conductive, the semi-transparent layer 116 may be in a floating state or may be supplied with a predetermined potential.

[0065] It is preferable to use a material containing aluminum (Al) or Ag as the pixel electrode 111, since the reflectance of the pixel electrode 111 is high and the light-emitting efficiency of the light-emitting element can be increased. Note that Al is preferable because the material cost is low and the patterning is easy, which reduces the manufacturing cost of the light-emitting element. In addition, Ag is preferable because it has a particularly high reflectance and can increase the light-emitting efficiency of the light-emitting element.

[0066] Metal oxides can be suitably used for the optical adjustment layer 112a, the optical adjustment layer 112b, the optical adjustment layer 112W, and the common electrode 114. The metal oxide preferably contains one or both of indium (In) and zinc (Zn). When the metal oxide contains one or both of In and Zn, the electrical conductivity can be increased and the light transmittance can be increased. In addition, Zn is preferable because the material cost is low, and therefore the manufacturing cost of the light-emitting element can be reduced.

[0067] In addition, when a material containing Al and an oxide containing In are in contact with each other, a difference in ionization tendency occurs between the material containing Al and the oxide containing In, which may cause electron transfer between the materials, resulting in electrolytic corrosion in the electrode containing the material. Therefore, it is preferable that the material containing Al and the oxide containing In are not in contact with each other. For this reason, Ag is particularly preferable as the metal of the pixel electrode 111.

[0068] The EL layer 113 has a light-emitting layer containing a light-emitting substance. Since the display device of this embodiment mode uses a light-emitting element that emits white light, the EL layer 113 may have a structure that produces two lights of complementary colors, or a structure that produces three lights of red, green, and blue. As the light-emitting substance, one or both of a fluorescent light-emitting material and a phosphorescent light-emitting material may be used. In addition to the light-emitting layer, the EL layer 113 has functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a charge generation layer.

[0069] Since the display device of this embodiment has a configuration in which a white light emitting element and a color filter are combined, the EL layer 113 in the subpixels of each color can have the same configuration.

[0070] By using a film with high barrier properties for the protective layer 115, impurities such as moisture and oxygen can be prevented from entering the light-emitting element, thereby preventing deterioration of the light-emitting element and improving the reliability of the display device.

[0071] In the display device of this embodiment, the semi-transmitting layer 116 is provided so as not to overlap with the light-emitting region of the light-emitting element 110W. For example, the semi-transmitting layer 116 can be formed in a desired shape by processing a film that becomes the semi-transmitting layer 116. Specifically, a film that has both transparency and reflectivity to visible light is first formed, and then the film is processed to form the semi-transmitting layer 116 only in a desired region. Here, when the protective layer 115 is not provided on the EL layer 113 during processing of the film, or when only the protective layer 115 with low barrier properties is provided, impurities may be mixed into the EL layer 113, and the reliability of the light-emitting element may decrease. For this reason, it is required to use a film with high barrier properties for the protective layer 115. By using a film with high barrier properties as the protective layer 115, impurities can be prevented from entering the light-emitting element during the formation of the semi-transmitting layer 116.

[0072] There is no particular limitation on the method used to process the semi-transparent layer 116, and for example, a wet etching method, a dry etching method, or a lift-off method can be used.

[0073] When the film that becomes the semi-transmitting layer 116 is processed by the dry etching method, the thickness of the protective layer 115 may be partially thinned. Specifically, the thickness of the protective layer 115 may be thinner than other parts in a portion overlapping with the light-emitting region of the light-emitting element 110W from which the film that becomes the semi-transmitting layer 116 is removed. FIG. 1(E) shows a removed region 115n of the protective layer 115 that overlaps with the light-emitting element 110W. Since the light-emitting element 110W does not have a microcavity structure, the effect on the emitted light color is small even if the thickness of the protective layer 115 is thinned. However, in order to prevent the reliability of the light-emitting element from decreasing, it is preferable that the protective layer 115 is covered with a sufficient thickness. In addition, the thickness of the protective layer 115 affects the optical distance between the pixel electrode 111 and the semi-transmitting layer 116, so if the protective layer 115 is too thick, light of a specific wavelength may be intensified too much. For these reasons, the thickness of the protective layer 115 is from 1 nm to 1000 nm, preferably from 50 nm to 500 nm, and more preferably from 100 nm to 300 nm.

[0074] The protective layer 115 preferably has at least one inorganic film (or inorganic insulating film), and more preferably has one or more inorganic films and one or more organic films. For example, the protective layer 115 may have a first inorganic film on the common electrode 114, an organic film on the first inorganic film, and a second inorganic film on the organic film.

[0075] It is preferable that the inorganic film (or inorganic insulating film) is highly moisture-proof and difficult for water to diffuse or penetrate. Furthermore, it is preferable that the inorganic film (or inorganic insulating film) is difficult for one or both of hydrogen and oxygen to diffuse or penetrate. This allows the inorganic film (or inorganic insulating film) to function as a barrier film. It is also possible to effectively prevent impurities from diffusing from the outside into the light-emitting element, thereby realizing a highly reliable display device.

[0076] For the protective layer 115, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, a nitride oxide insulating film, or the like can be used. Examples of the oxide insulating film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the oxynitride insulating film include a silicon oxynitride film. Examples of the nitride oxide insulating film include a silicon nitride oxide film.

[0077] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0078] In particular, a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film are suitable for the protective layer 115 because they each have high moisture resistance.

[0079] From the viewpoint of light extraction efficiency, the difference between the refractive index of protective layer 115 and the refractive index of common electrode 114 is preferably 0.5 or less, and particularly preferably 0.3 or less. The refractive index of common electrode 114 is relatively high, and when ITO is used for common electrode 114, the refractive index of common electrode 114 is about 2.0. Therefore, it is preferable to use a material with a relatively high refractive index for protective layer 115 as well.

[0080] For example, the refractive indexes of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film are approximately 1.7 or more and 2.3 or less, which is higher than that of a silicon oxide film (refractive index: approximately 1.5). For this reason, the silicon nitride film, the silicon nitride oxide film, and the aluminum oxide film are each suitable as the protective layer 115.

[0081] The protective layer 115 may also be an inorganic film containing ITO, Ga-Zn oxide, Al-Zn oxide, In-Ga-Zn oxide, or the like. The inorganic film preferably has a high resistance, and preferably has a higher resistance than the common electrode 114. The inorganic film may further contain nitrogen.

[0082] For example, the conductive film that transmits visible light and is used for the common electrode 114 and the inorganic film that transmits visible light and is used for the protective layer 115 may have a common metal element. This can increase the adhesion between the common electrode 114 and the protective layer 115, and can suppress film peeling and intrusion of impurities from the interface.

[0083] For example, a first ITO film may be used for the common electrode 114, and a second ITO film may be used for the protective layer 115. The second ITO film preferably has a higher resistivity than the first ITO film. Alternatively, for example, a first Ga-Zn oxide film may be used for the common electrode 114, and a second Ga-Zn oxide film may be used for the protective layer 115. The second Ga-Zn oxide film preferably has a higher resistivity than the first Ga-Zn oxide film.

[0084] The inorganic film containing Ga, Zn, and O can be formed, for example, by depositing a Ga-Zn-O-based metal oxide target (Ga 2 O 3 The insulating film containing Al, Zn, and O can be obtained by forming the film in an oxygen atmosphere or an argon and oxygen mixed atmosphere using an Al-Zn-O based metal oxide target (Al 2 O 3 In addition, an inorganic film containing Ga or Al, Zn, O, and N can be obtained by depositing a film using a similar target in a mixed atmosphere of argon, oxygen, and nitrogen.

[0085] The protective layer 115 may also have an organic insulating film using an acrylic resin, an epoxy resin, a polyimide resin, a polyamide resin, a polyimideamide resin, a polysiloxane resin, a benzocyclobutene-based resin, a phenol resin, or the like.

[0086] The protective layer 115 has a specific resistance of 10 10 It is preferable that the resistivity is Ωcm or more.

[0087] The protective layer 115 can be formed using a chemical vapor deposition (CVD) method (such as a plasma enhanced chemical vapor deposition (PECVD) method), a sputtering method (such as a DC sputtering method, an RF sputtering method, or an ion beam sputtering method), an atomic layer deposition (ALD) method, or the like.

[0088] The sputtering method and the ALD method allow film formation at low temperatures. The EL layer 113 included in the light-emitting element has low heat resistance. For this reason, the protective layer 115 formed after the light-emitting element is fabricated is preferably formed at a relatively low temperature, typically 100° C. or lower, and the sputtering method and the ALD method are suitable for this purpose.

[0089] The protective layer 115 may be formed by stacking two or more insulating films each formed by a different film formation method.

[0090] For example, it is preferable to first form a first inorganic film layer by using a sputtering method, and then form a second inorganic film layer by using an ALD method.

[0091] Films formed by sputtering have fewer impurities and a higher density than films formed by ALD. Films formed by ALD have better step coverage and are less affected by the shape of the surface on which they are formed than films formed by sputtering.

[0092] The first inorganic film has few impurities and is highly dense. The second inorganic film is formed to cover areas that were not sufficiently covered by the first inorganic film due to unevenness in the surface on which it is formed. This makes it possible to form a protective layer that can further reduce the diffusion of water, etc., compared to when only one inorganic film is formed.

[0093] Specifically, it is preferable to first form an aluminum oxide film, a zirconium oxide film, an ITO film, a Ga-Zn oxide film, an Al-Zn oxide film, or an In-Ga-Zn oxide film by using a sputtering method, and then form an aluminum oxide film or a zirconium oxide film by using an ALD method.

[0094] The thickness of the inorganic film formed by sputtering is preferably 50 nm or more and 1000 nm or less, and more preferably 100 nm or more and 300 nm or less.

[0095] The thickness of the inorganic film formed by the ALD method is preferably 1 nm or more and 100 nm or less, and more preferably 5 nm or more and 50 nm or less.

[0096] The water vapor permeability of the protective layer 115 is 1×10 -2 g / (m 2 ·day), preferably less than 5 × 10 -3 g / (m 2 ·day) or less, preferably 1×10 -4 g / (m 2 ·day) or less, preferably 1×10 -5 g(m 2 ·day) or less, preferably 1×10 -6 g / (m 2 The lower the water vapor transmission rate, the more the diffusion of water from the outside to the light emitting element can be reduced.

[0097] Note that the insulating layer 104 may be formed using an inorganic insulating film or an organic insulating film that can be used for the protective layer 115 .

[0098] The insulating layer 104 formed before fabricating a light-emitting element can be formed at a high temperature. By setting the substrate temperature during film formation at a high temperature (for example, 100° C. or higher and 350° C. or lower), a dense film with high barrier properties can be formed. The insulating layer 104 can be formed not only by a sputtering method or an ALD method, but also by a CVD method. The CVD method is preferable because of its high film formation speed.

[0099] Materials such as glass, quartz, organic resin, metal, alloy, and semiconductor can be used for the substrate 101. As will be described later in the second embodiment, the substrate 101 may be provided with various semiconductor circuits.

[0100] [Pixels] 2A and 2B show an example of a top view of a pixel 130. The pixel 130 shown in Fig. 2A has sub-pixels arranged in one row and four columns. The pixel 130 shown in Fig. 2B has sub-pixels arranged in two rows and two columns.

[0101] 2A and 2B, a display device in which one color is expressed by four sub-pixels of R (red), G (green), B (blue), and W (white) will be described as an example. In the display device according to one embodiment of the present invention, the color elements are not limited, and colors other than RGBW (e.g., yellow, cyan, or magenta) may be used.

[0102] FIG. 2C is a cross-sectional view taken along dashed line A1-A2 in FIG.

[0103] The light emitting element 110W of the subpixel that emits white light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112W on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112W, and a common electrode 114 on the EL layer 113.

[0104] The light emitting element 110R of the subpixel emitting red light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112R on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112R, and a common electrode 114 on the EL layer 113.

[0105] The light emitting element 110G in the subpixel that emits green light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112G on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112G, and a common electrode 114 on the EL layer 113.

[0106] The light emitting element 110B in the subpixel emitting blue light has a pixel electrode 111 on the substrate 101, an optical adjustment layer 112B on the pixel electrode 111, an EL layer 113 on the optical adjustment layer 112B, and a common electrode 114 on the EL layer 113.

[0107] The pixel electrode 111 functions as an anode. The optical adjustment layer 112W, the optical adjustment layer 112R, the optical adjustment layer 112G, and the optical adjustment layer 112B are conductive. The ends of the pixel electrode 111, the ends of the optical adjustment layer 112W, the ends of the optical adjustment layer 112R, the optical adjustment layer 112G, and the ends of the optical adjustment layer 112B are each covered with an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping with the pixel electrode 111. The EL layer 113 has at least a light-emitting layer. The common electrode 114 functions as a cathode. The EL layer 113 and the common electrode 114 are each provided across a plurality of light-emitting elements.

[0108] The light emitting elements 110W, 110R, 110G, and 110B are covered with a protective layer 115.

[0109] The light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B overlap with the semi-transmitting layer 116 via the protective layer 115. The semi-transmitting layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, but overlaps with the light-emitting regions of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0110] The semi-transmitting layer 116 can also be regarded as a component of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B. That is, it can be said that the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B each have the pixel electrode 111 and the semi-transmitting layer 116. It can also be said that the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B each have a microcavity structure. It can also be said that the light-emitting element 110W does not have a microcavity structure.

[0111] The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B have a microcavity structure.

[0112] In the light emitting element 110R, the thickness of the optical adjustment layer 112R is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmitting layer 116 is an optical distance that strengthens red light emission. Similarly, in the light emitting element 110G, the thickness of the optical adjustment layer 112G is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmitting layer 116 is an optical distance that strengthens green light emission. And, in the light emitting element 110B, the thickness of the optical adjustment layer 112B is adjusted so that the optical distance between the pixel electrode 111 and the semi-transmitting layer 116 is an optical distance that strengthens blue light emission. By adjusting the optical distance between the pixel electrode 111 and the semi-transmitting layer 116, the light extraction efficiency for light of a desired wavelength can be improved. As a result, red, green, and blue light with high color purity can be obtained from the sub-pixels that exhibit red, green, and blue light, respectively.

[0113] On the other hand, the light emitting element 110W does not have a microcavity structure. The light emitted by the light emitting layer is extracted to the outside without the intensity of light of a specific wavelength being increased by the semi-transmitting layer 116. Therefore, the light emitting element 110W can efficiently extract white light to the outside. This allows the power consumption of the display device to be reduced.

[0114] 2(C) shows an example in which the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112B. As described with reference to FIG. 1(D), in the light emitting element 110W, a part of the light 113EM from the EL layer 113 is reflected by the pixel electrode 111. In the case of the light emitting element 110W shown in FIG. 2(C), a part of the light from the EL layer 113 is reflected by the pixel electrode 111, and the intensity of the light of blue wavelength is enhanced and is emitted through the common electrode 114. As a result, in cases where the light emitted by the EL layer 113 is white light with a low color temperature, the light emitted from the light emitting element 110W of the subpixel that exhibits white light can be made closer to white light with a desired color temperature.

[0115] 2A and 2C, the subpixels emitting red, green, and blue light have light-emitting elements to which a microcavity structure is applied, and the subpixel emitting white light has a light-emitting element to which a microcavity structure is not applied. With this configuration, the light extraction efficiency of both light with high color purity and white light can be increased, and a display device with high display quality and low power consumption can be realized.

[0116] FIG. 2D is a cross-sectional view taken along dashed line A1-A2 in FIG. 2A, which is different from FIG. 2C.

[0117] The light emitting element included in the sub-pixel that emits light of each color includes a pixel electrode 118 , an EL layer 113 on the pixel electrode 118 , and a common electrode 114 on the EL layer 113 .

[0118] The pixel electrode 118 functions as an anode. An end of the pixel electrode 118 is covered with an insulating layer 104. The insulating layer 104 has an opening in a portion overlapping with the pixel electrode 118. The EL layer 113 has at least a light-emitting layer. The common electrode 114 functions as a cathode.

[0119] Each light emitting element is covered with a protective layer 115 .

[0120] The light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B overlap with the semi-transmitting layer 116 via the protective layer 115. The semi-transmitting layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, but overlaps with the light-emitting regions of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0121] Furthermore, the reflective layer 117 on the substrate 101 and the optical adjustment layer 119a on the reflective layer 117 can be regarded as components of the light-emitting element 110W of the subpixel that emits white light. Similarly, the reflective layer 117 on the substrate 101, the optical adjustment layer 119a on the reflective layer 117, the optical adjustment layer 119b on the optical adjustment layer 119a, and the optical adjustment layer 119c on the optical adjustment layer 119b can be regarded as components of the light-emitting element 110R of the subpixel that emits red light. Furthermore, the reflective layer 117 on the substrate 101, the optical adjustment layer 119a on the reflective layer 117, and the optical adjustment layer 119b on the optical adjustment layer 119a can be regarded as components of the light-emitting element 110G of the subpixel that emits green light. Moreover, the reflective layer 117 on the substrate 101 and the optical adjustment layer 119a on the reflective layer 117 can be considered as components of the light emitting element 110B of the subpixel that emits blue light.

[0122] The reflectivity of the reflective layer 117 to visible light is higher than that of the pixel electrode 111. The pixel electrode 111 and the common electrode 114 can also be called transparent electrodes. It is preferable that the reflectivity of the semi-transmitting layer 116 to visible light is higher than that of the common electrode 114 to visible light and lower than that of the reflective layer 117 to visible light.

[0123] For example, the reflectance of the reflective layer 117 to visible light is 40% to 100%, preferably 70% to 100%. Also, for example, the reflectance of the semi-transmitting layer 116 to visible light is 20% to 80%, preferably 40% to 70%. Also, for example, the transmittance of the pixel electrode 111 and the common electrode 114 to visible light is 40% or more.

[0124] The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B have a microcavity structure.

[0125] In the light emitting elements 110R, 110G, and 110B, the thicknesses of the optical adjustment layers 119a, 119b, and 119c are adjusted so that the optical distance between the reflective layer 117 and the semi-transmitting layer 116 is an optical distance that enhances red emission, green emission, and blue emission, respectively. By adjusting the optical distance between the reflective layer 117 and the semi-transmitting layer 116, it is possible to increase the light extraction efficiency for light of a desired wavelength. As a result, red, green, and blue light with high color purity can be obtained from the sub-pixels that emit red, green, and blue light, respectively.

[0126] Fig. 2(C) shows an example in which the pixel electrode 111 is a reflective electrode, and an optical adjustment layer is provided between the pixel electrode 111 and the EL layer 113. As shown in Fig. 2(D), the pixel electrode 118 may be a transparent electrode, and a reflective layer 117 may be provided on the opposite side of the pixel electrode 118 to the EL layer 113. In this case, an optical adjustment layer can be provided between the reflective layer 117 and the pixel electrode 118. In the configuration of Fig. 2(D), an insulating layer can be used for the optical adjustment layer, which is preferable since it allows a wider range of materials to be used.

[0127] On the other hand, the light emitting element 110W does not have a microcavity structure. The light emitted by the light emitting layer is extracted to the outside without the intensity of light of a specific wavelength being increased by the semi-transmitting layer 116. Therefore, the light emitting element 110W can efficiently extract white light to the outside. This allows the power consumption of the display device to be reduced.

[0128] 2A and 2D, the subpixels emitting red, green, and blue light have light-emitting elements to which a microcavity structure is applied, and the subpixel emitting white light has a light-emitting element to which a microcavity structure is not applied. With this configuration, the light extraction efficiency of both light with high color purity and white light can be increased, and a display device with high display quality and low power consumption can be realized.

[0129] FIG. 2E is a cross-sectional view taken along dashed line A1-A2 in FIG. 2A, which is different from FIGS. 2C and 2D.

[0130] In FIG. 2E, the protective layer 115 has an opening, and the conductive layer 120 that transmits visible light is electrically connected to the common electrode 114 through the opening. A protective layer 125 is provided on the conductive layer 120 that transmits visible light. The protective layer 125 has an opening that overlaps with a light-emitting region of a light-emitting element to which a microcavity structure is applied. The semi-transmitting layer 116 is electrically connected to the conductive layer 120 that transmits visible light through the opening. The protective layer 115 and the protective layer 125 transmit visible light, and therefore can be provided to overlap with the light-emitting region of the light-emitting element. Therefore, the design margin can be wider than that of the semi-transmitting layer 116. From the viewpoint of preventing deterioration of the light-emitting element, the protective layer 115 having an opening is preferably formed using a mask. In addition, from the viewpoint of preventing deterioration of the light-emitting element, the protective layer 115 and the protective layer 125 preferably have portions that overlap with each other. Furthermore, an auxiliary wiring that is electrically connected to the semi-transmitting layer 116 and the common electrode 114 may be provided on the protective layer 125.

[0131] In the display device of the present embodiment, a conductive material that transmits visible light is used for the common electrode 114, and therefore a voltage drop is likely to occur due to the resistance of the common electrode 114. As shown in FIG. 2(E), the semi-transmissive layer 116 and the common electrode 114 are electrically connected to each other, thereby making it possible to suppress the voltage drop due to the resistance of the common electrode 114. This makes it possible to suppress uneven brightness of the display device and improve the display quality of the display device.

[0132] [Semi-transparent layer layout] 3(A) to 3(E) show examples of the top surface layout of the semi-transparent layer 116. In FIG.

[0133] 3(A) to 3(C) show an example in which the semi-transmitting layer 116 has an opening at a position overlapping with the light-emitting region of the light-emitting element 110W. This configuration is preferable because it allows the semi-transmitting layer 116 to be provided over a wide range of the display unit of the display device. For example, this is particularly suitable for a case in which a constant potential is supplied to the semi-transmitting layer 116 and the semi-transmitting layer 116 is configured to act as a shield for blocking noise.

[0134] 3A and 3B show an example in which one opening of the semi-transmitting layer 116 overlaps with the light-emitting region of one light-emitting element 110W. Fig. 3C shows an example in which one opening of the semi-transmitting layer 116 overlaps with the light-emitting regions of multiple light-emitting elements 110W arranged in a row.

[0135] Furthermore, as shown in Figures 3(D) and 3(E), the semi-transmitting layer 116 may be formed in a plurality of islands. Figure 3(D) shows an example in which one island-shaped semi-transmitting layer 116 overlaps with the light-emitting regions of three sub-pixels (R, G, B) of one pixel 130. Figure 3(E) shows an example in which one island-shaped semi-transmitting layer 116 overlaps with the light-emitting regions of three sub-pixels (R, G, B) of multiple pixels 130 arranged in a row.

[0136] [Other components of the display device] Next, an example in which components are added to the display device shown in Fig. 2(C) is shown in Fig. 4(A) to Fig. 4(C). Note that a description of the components described in Fig. 2(C) will be omitted.

[0137] The display device shown in Figure 4(A) has a protective layer 121 on the protective layer 115 and on the semi-transparent layer 116, a red colored layer CFR on the protective layer 121, a green colored layer CFG on the protective layer 121, and a blue colored layer CFB on the protective layer 121.

[0138] By providing the protective layer 121, impurities can be further prevented from entering the light-emitting element, which is preferable. As the material of the protective layer 121, the materials that can be used for the protective layer 115 can be used.

[0139] Protective layer 121 contacts protective layer 115 in a region overlapping with the light emitting region of light emitting element 110W. Protective layer 121 contacts semi-transparent layer 116 in each of a region overlapping with the light emitting region of light emitting element 110R, a region overlapping with the light emitting region of light emitting element 110G, and a region overlapping with the light emitting region of light emitting element 110B.

[0140] When the colored layer is formed directly on the light-emitting element, it is easier to align the light-emitting element and the colored layer compared to forming the colored layer on the substrate 371 side. This makes it easier to achieve high definition in the display device, which is preferable.

[0141] As shown in FIG. 4B, the protective layer 121 may not be provided, and colored layers of various colors may be provided on and in contact with the semi-transparent layer 116.

[0142] 4C, a light-shielding layer BM may be provided on the protective layer 121. FIG. 4C shows an example in which a planarizing layer 122 and a functional layer 123 are provided on a light-emitting element via a protective layer 115 and a protective layer 121. Note that the functional layer 123 may be provided directly on the protective layer 121 without providing the planarizing layer 122.

[0143] The display device of this embodiment has a protective layer 115 (and a protective layer 121) with high barrier properties in contact with the light-emitting element, and therefore various components can be formed directly on the light-emitting element. For example, one or both of a colored layer and a light-shielding layer BM can be provided on the light-emitting element. In addition, as the functional layer 123, for example, one or more of an insulating layer, a conductive layer, a planarizing layer, an adhesive layer, a circular polarizer, a touch sensor, an impact absorbing layer, and a surface protective layer can be used.

[0144] The semi-transmissive layer 116 may also function as an electrode of a touch sensor.

[0145] The colored layer is a colored layer that transmits light in a specific wavelength range. For example, a color filter that transmits light in a red, green, blue, or yellow wavelength range can be used. Examples of materials that can be used for the colored layer include metal materials, resin materials, and resin materials containing pigments or dyes.

[0146] The light-shielding layer BM is provided between adjacent colored layers. The light-shielding layer BM blocks light emitted from adjacent light-emitting elements and suppresses color mixing between adjacent light-emitting elements. Here, by providing the end of the colored layer so as to overlap the light-shielding layer BM, light leakage can be suppressed. As the light-shielding layer BM, a material that blocks light emitted from the light-emitting elements can be used, and for example, a black matrix can be formed using a metal material or a resin material containing a pigment or dye. Note that it is preferable to provide the light-shielding layer BM in an area other than the display unit such as a driving circuit, since unintended light leakage due to guided light can be suppressed.

[0147] [Specific examples of display devices] Next, a more specific configuration of the display device of the present embodiment will be described with reference to FIGS.

[0148] Fig. 5(A) shows a top view of the display device 10A, and Fig. 5(B) shows a cross-sectional view taken along dashed line B1-B2 shown in Fig. 5(A).

[0149] 5A includes a display unit 71 and a driving circuit 78. An FPC 74 is connected to the display device 10A.

[0150] The display device 10A is a display device of a top emission structure to which a color filter system is applied.

[0151] As shown in FIG. 5(B), the display device 10A includes a substrate 361, an insulating layer 367, transistors 301 and 303, wiring 307, an insulating layer 314, a light-emitting element 110W, a light-emitting element 110R, a light-emitting element 110G, a light-emitting element 110B, an insulating layer 104, a protective layer 115, a semi-transparent layer 116, a protective layer 121, a colored layer CFR, a colored layer CFG, a colored layer CFB, an adhesive layer 318, and a substrate 371.

[0152] Each light-emitting element has a pixel electrode 111, an EL layer 113, and a common electrode 114. The pixel electrode 111 is electrically connected to the source or drain of the transistor 303. These are directly connected or connected via another conductive layer. The EL layer 113 and the common electrode 114 are provided across a plurality of light-emitting elements.

[0153] Each light-emitting element further has an optical adjustment layer between the pixel electrode 111 and the EL layer 113. The light-emitting element 110W of the sub-pixel that emits white light has an optical adjustment layer 112W, and the light-emitting element 110R of the sub-pixel that emits red light has an optical adjustment layer 112R. FIG. 5(B) shows an example in which the thickness of the optical adjustment layer 112W is equal to the thickness of the optical adjustment layer 112R. As described with reference to FIG. 1(D), in the light-emitting element 110W, a part of the light 113EM from the EL layer 113 is reflected by the pixel electrode 111. In the case of the light-emitting element 110W shown in FIG. 5(B), a part of the light from the EL layer 113 is reflected by the pixel electrode 111, and the intensity of the light of the red wavelength is enhanced, and the light is transmitted through the common electrode 114 and emitted. This allows the light emitted from the light emitting element 110W of the subpixel that provides white light to be closer to the white light with a desired color temperature, for example, when the light emitted from the EL layer 113 is white light with a high color temperature. The light emitting element 110G of the subpixel that provides green light has an optical adjustment layer 112G, and the light emitting element 110B of the subpixel that provides blue light has an optical adjustment layer 112B. FIG. 5B shows an example in which each optical adjustment layer covers the side surface of the pixel electrode 111.

[0154] The light emitting elements 110W, 110R, 110G, and 110B are covered with a protective layer 115.

[0155] The light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B overlap with the semi-transmitting layer 116 via the protective layer 115. The semi-transmitting layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, but overlaps with the light-emitting regions of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0156] 5(A) and 5(B), the display device 10A has light-emitting elements to which a microcavity structure is applied in the sub-pixels that emit red, green, and blue light, and has a light-emitting element to which a microcavity structure is not applied in the sub-pixel that emits white light. With this configuration, it is possible to increase the light extraction efficiency of both light with high color purity and white light, and to realize a display device with high display quality and low power consumption.

[0157] The insulating layer 104 covers the ends of the pixel electrodes 111 and the ends of the optical adjustment layer. Two adjacent pixel electrodes 111 are electrically insulated by the insulating layer 104.

[0158] The protective layer 115 is provided on the light-emitting element, covers the end of the common electrode 114, and is in contact with the insulating layer 104 and the insulating layer 313 outside the end of the common electrode 114. This can prevent impurities from entering the transistor and the light-emitting element. In particular, it is preferable to use an inorganic film (or an inorganic insulating film) with high barrier properties for the protective layer 115 and the insulating layer 313. Furthermore, it is preferable to use an inorganic insulating film with high barrier properties for the insulating layer 104 as well. By stacking the inorganic films (or inorganic insulating films) in contact with each other at the end of the display device and in its vicinity, impurities are less likely to enter from the outside, and deterioration of the transistor and the light-emitting element can be prevented.

[0159] Substrate 361 and substrate 371 are attached to each other by adhesive layer 318. The space sealed by substrate 361, substrate 371, and adhesive layer 318 is preferably filled with an inert gas such as nitrogen or argon, or with a resin.

[0160] Materials such as glass, quartz, resin, metal, alloy, and semiconductor can be used for the substrate 361 and the substrate 371. A material that transmits light is used for the substrate 371 on the side from which light from the light-emitting element is extracted. It is preferable to use a flexible substrate for the substrate 361 and the substrate 371.

[0161] For the adhesive layer, various types of curing adhesives can be used, such as a photocuring adhesive such as an ultraviolet curing adhesive, a reaction curing adhesive, a heat curing adhesive, an anaerobic adhesive, etc. Also, an adhesive sheet or the like can be used.

[0162] The driver circuit 78 includes a transistor 301. The display portion 71 includes a transistor 303.

[0163] Each transistor has a gate, a gate insulating layer 311, a semiconductor layer, a back gate, a source, and a drain. The gate (lower gate) and the semiconductor layer overlap with the gate insulating layer 311 interposed therebetween. The back gate (upper gate) and the semiconductor layer overlap with the insulating layer 312 and the insulating layer 313 interposed therebetween. The two gates are preferably electrically connected.

[0164] The transistor structures may be different between the drive circuit 78 and the display unit 71. The drive circuit 78 and the display unit 71 may each have a plurality of types of transistors.

[0165] By arranging the transistors, wirings, and the like so as to overlap the light-emitting region of the light-emitting element, the aperture ratio of the display portion 71 can be increased.

[0166] At least one of the insulating layers 312, 313, and 314 is preferably made of a material through which impurities such as water or hydrogen do not easily diffuse. This makes it possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device. The insulating layer 314 functions as a planarization layer.

[0167] The insulating layer 367 functions as a base film. The insulating layer 367 is preferably made of a material that does not easily diffuse impurities such as water or hydrogen.

[0168] The connection portion 306 has a wiring 307. The wiring 307 can be formed of the same material and in the same process as the source and drain of a transistor. The wiring 307 is electrically connected to an external input terminal that transmits a signal or potential from the outside to a driver circuit 78. Here, an example is shown in which an FPC 74 is provided as the external input terminal. The FPC 74 and the wiring 307 are electrically connected via a connector 319.

[0169] As the connector 319, various anisotropic conductive films (ACF) and anisotropic conductive pastes (ACP) can be used.

[0170] Fig. 6(A) shows a top view of the display device 10B, and Fig. 6(B) shows a cross-sectional view taken along dashed line C1-C2 shown in Fig. 6(A).

[0171] 6A includes a display unit 71, a connection unit 75, and a drive circuit 78. An FPC 74 is connected to the display unit 10B.

[0172] The display unit 71 of the display device 10B has the same configuration as the display unit 71 of the display device 10A. The configuration of the connection unit 75 will be described in detail below.

[0173] The connection portion 75 shown in FIG. 6(A) and FIG. 6(B) is provided outside the display unit 71. The connection portion 75 is preferably provided so as to surround the four sides of the display unit 71. The connection portion 75 has a portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a, and a portion where the semi-transparent layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b. In the connection portion 75, the insulating layer 104 has an opening outside the end of the EL layer 113, and the common electrode 114 is connected to the conductive layer 357a through the opening. Then, the protective layer 115 has an opening outside the end of the common electrode 114, and the semi-transparent layer 116 is connected to the conductive layer 358 through the opening. In other words, in the connection portion 75, a portion where the semi-transparent layer 116 is electrically connected to the conductive layer 358, the conductive layer 357b, and the conductive layer 356b is provided outside the portion where the common electrode 114 is electrically connected to the conductive layer 357a and the conductive layer 356a.

[0174] The conductive layers 356a and 356b can be formed using the same material and in the same process as the source and drain of the transistor. The conductive layers 357a and 357b can be formed using the same material and in the same process as the pixel electrode 111. The conductive layer 358 can be formed using the same material and in the same process as the common electrode 114.

[0175] In this manner, by electrically connecting the common electrode 114 to a conductive layer formed using the same material and process as the conductive layer of the transistor or light-emitting element, a voltage drop caused by the resistance of the common electrode 114 can be suppressed, and display unevenness of the display device can be reduced.

[0176] Furthermore, by electrically connecting a conductive layer formed of the same material and in the same process as a conductive layer of a transistor or a light-emitting element to the semi-transparent layer 116, a constant potential can be supplied to the semi-transparent layer 116, and the semi-transparent layer 116 can be configured to function as a shield for blocking noise. This allows the transistor to operate stably. Furthermore, when a touch sensor is provided on a transistor via the semi-transparent layer 116, both the transistor and the touch sensor can operate stably.

[0177] The common electrode 114 and the semi-transparent layer 116 may be supplied with the same potential or different potentials, and may be electrically connected to each other.

[0178] It is preferable to apply the same potential to the common electrode 114 and the semi-transparent layer 116 because this allows a power supply circuit to be shared.

[0179] As shown in Fig. 7, the common electrode 114 and the semi-transparent layer 116 may be electrically connected to the same conductive layer. The connection portion 75 shown in Fig. 7 differs from the connection portion 75 shown in Fig. 6(B) in that it does not have the conductive layers 356a and 356b but has the conductive layer 356.

[0180] Fig. 8 shows a cross-sectional view of the display device 15A. The top view of the display device 15A is similar to that of the display device 10A shown in Fig. 5(A). Fig. 8 corresponds to a cross-sectional view taken along dashed line B1-B2 shown in Fig. 5(A). Note that descriptions of parts similar to those of the display device 10A may be omitted.

[0181] The display device 15A shown in FIG. 8 includes a substrate 361, an adhesive layer 363, an insulating layer 365, transistors 301, 303, wiring 307, an insulating layer 314, a light-emitting element 110W, a light-emitting element 110R, a light-emitting element 110G, a light-emitting element 110B, an insulating layer 104, a protective layer 115, a semi-transparent layer 116, a protective layer 121, a colored layer CFR, a colored layer CFG, a colored layer CFB, an adhesive layer 317, and a substrate 371.

[0182] Each light-emitting element has a pixel electrode 111, an optical adjustment layer, an EL layer 113, and a common electrode 114. The optical adjustment layer shown in Fig. 8 differs from that in Fig. 5(B) in that it does not cover the side surface of the end of the pixel electrode 111. Each light-emitting element is covered with a protective layer 115.

[0183] The light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B overlap with the semi-transmitting layer 116 via the protective layer 115. The semi-transmitting layer 116 does not overlap with the light-emitting region of the light-emitting element 110W, but overlaps with the light-emitting regions of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0184] 8 has light-emitting elements to which a microcavity structure is applied in sub-pixels that emit red, green, and blue light, and has light-emitting elements to which a microcavity structure is not applied in sub-pixels that emit white light. With this configuration, it is possible to increase the light extraction efficiency of both light with high color purity and white light, and to realize a display device with high display quality and low power consumption.

[0185] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 317. The substrate 361 and the insulating layer 365 are bonded together by an adhesive layer 363.

[0186] The display device 15A is formed by transferring transistors, light-emitting elements, and the like formed on a fabrication substrate onto a substrate 361. Each of the substrate 361 and the substrate 371 is preferably flexible, which can increase the flexibility of the display device 15A.

[0187] The display device 15A differs from the display device 10A in the structure of the transistors 301 and 303.

[0188] 8 includes a back gate, a gate insulating layer 311, a semiconductor layer, a gate insulating layer, a gate, an insulating layer 315, a source, and a drain. The semiconductor layer includes a channel formation region and a pair of low-resistance regions. The back gate (lower gate) and the channel formation region overlap with the gate insulating layer 311 interposed therebetween. The gate (upper gate) and the channel formation region overlap with the gate insulating layer interposed therebetween. The source and the drain are each electrically connected to the low-resistance region through an opening provided in the insulating layer 315.

[0189] [Touch panel] In one embodiment of the present invention, a display device equipped with a touch sensor (hereinafter also referred to as a touch panel) can be manufactured. A configuration example of the touch panel will be described with reference to FIGS.

[0190] There is no limitation on a sensing element (also referred to as a sensor element) included in a touch panel of one embodiment of the present invention. Various sensors capable of detecting the proximity or contact of a sensing object such as a finger or a stylus can be used as the sensing element.

[0191] For example, various sensor types can be used, such as a capacitance type, a resistive film type, a surface acoustic wave type, an infrared type, an optical type, and a pressure sensitive type.

[0192] In this embodiment, a touch panel having capacitance type sensing elements will be described as an example.

[0193] The capacitance type includes a surface capacitance type, a projected capacitance type, etc. The projected capacitance type includes a self-capacitance type, a mutual capacitance type, etc. The mutual capacitance type is preferable because it enables simultaneous multipoint detection.

[0194] The touch panel of one embodiment of the present invention can have various configurations, such as a configuration in which a display device and a detector element that are separately manufactured are bonded to each other, or a configuration in which electrodes that constitute a detector element are provided on one or both of a substrate that supports a light-emitting element and an opposing substrate.

[0195] FIG. 9(A) is a schematic perspective view of the touch panel 300. FIG. 9(B) is a schematic perspective view of FIG. 9(A) unfolded. For clarity, only representative components are shown. In FIG. 9(B), some components (substrate 330, substrate 371, etc.) are outlined by broken lines only.

[0196] The touch panel 300 has an input device 310 and a display device 370, and these are provided one over the other.

[0197] The input device 310 has a substrate 330, electrodes 331, electrodes 332, a plurality of wirings 341, and a plurality of wirings 342. The FPC 350 is electrically connected to each of the plurality of wirings 341 and the plurality of wirings 342. An IC 351 is provided on the FPC 350.

[0198] The display device 370 has a substrate 361 and a substrate 371 provided opposite to each other. The display device 370 has a display unit 71 and a drive circuit 78. On the substrate 361, wirings 307 etc. are provided. The FPC 74 is electrically connected to the wiring 307. An IC 374 is provided on the FPC 74.

[0199] The wiring 307 has a function of supplying signals and power to the display unit 71 and the drive circuit 78. The signals and power are input to the wiring 307 from the outside or the IC 374 via the FPC 74.

[0200] FIG. 10 shows an example of a cross-sectional view of the touch panel 300. In FIG. 10, cross-sectional structures of regions including the display unit 71, the region including the FPC 74, and the region including the FPC 350 etc. are shown. In FIG. 10, a cross-sectional structure of an intersection 387 where the electrodes 331 and 332 of the touch sensor included in the display unit 71 intersect is shown.

[0201] Substrate 361 and substrate 371 are bonded together by adhesive layer 318. Substrate 371 and substrate 330 are bonded together by adhesive layer 396. Here, each layer from substrate 361 to substrate 371 corresponds to display device 370. Also, each layer from substrate 330 to electrode 334 corresponds to input device 310. In other words, it can be said that adhesive layer 396 bonds display device 370 to input device 310. Alternatively, it can be said that each layer from substrate 330 to substrate 371 corresponds to input device 310, and adhesive layer 318 bonds display device 370 to input device 310.

[0202] The configuration of the display device 370 shown in FIG. 10 is similar to that of the display device 10A shown in FIG. 5(B), and therefore a detailed description thereof will be omitted.

[0203] The input device 310 will be described in detail. An electrode 331 and an electrode 332 are provided on the substrate 371 side of the substrate 330. Here, an example is shown in which the electrode 331 has an electrode 333 and an electrode 334. As shown in the intersection 387 in FIG. 10, the electrodes 332 and 333 are formed on the same plane. An insulating layer 395 is provided so as to cover the electrodes 332 and 333. The electrode 334 is electrically connected to the two electrodes 333 provided to sandwich the electrode 332 through an opening provided in the insulating layer 395. A connection portion 308 is provided in an area near the end of the substrate 330. The connection portion 308 has a laminated structure of a wiring 342 and a conductive layer obtained by processing the same conductive layer as the electrode 334. The connection portion 308 is electrically connected to the FPC 350 through a connector 309.

[0204] Here, in the display unit 71, a semi-transmissive layer 116 is provided between the transistor 303 of the display device 370 and the electrodes 331 and 332 of the input device 310. A constant potential is preferably supplied to the semi-transmissive layer 116. This allows the semi-transmissive layer 116 to function as a shield for blocking noise, making it possible to stabilize the operations of the transistor and the touch sensor.

[0205] As shown in FIGS. 11(A), 11(B), 12(A) and 12(B), a touch panel may be manufactured by forming a touch sensor directly on a light-emitting element.

[0206] In FIG. 11A, a substrate 361 and an insulating layer 365 are bonded together by an adhesive layer 363, and a transistor 303 is provided on the insulating layer 365. An insulating layer 314 is provided on the transistor 303, and a pixel electrode 111 is provided on the insulating layer 314. The source or drain of the transistor 303 is electrically connected to the pixel electrode 111 through an opening in the insulating layer 314. An optical adjustment layer is provided on the pixel electrode 111, and an insulating layer 104 is provided so as to cover the pixel electrode 111 and the end of the optical adjustment layer. An EL layer 113 is provided on the optical adjustment layer and the insulating layer 104, a common electrode 114 is provided on the EL layer 113, and a protective layer 115 is provided on the common electrode 114. A semi-transmitting layer 116 is provided on the protective layer 115. A protective layer 121 is provided on the protective layer 115 and the semi-transmitting layer 116, and a light-shielding layer BM and a colored layer CFR are provided on the protective layer 121. A planarization layer 122 is provided on the protective layer 121, the light-shielding layer BM, and the colored layer CFR, and a detector element TC is provided on the planarization layer 122. The detector element TC has an electrode 331 on the planarization layer 122, an insulating layer 392 on the electrode 331, and an electrode 332 on the insulating layer 392. An insulating layer 391 is provided on the detector element TC, and the insulating layer 391 and a substrate 371 are bonded together by an adhesive layer 317. A circularly polarizing plate 390 is provided on the substrate 371. Note that the substrate 371 may not be provided, and the insulating layer 391 and the circularly polarizing plate 390 may be directly bonded together by the adhesive layer 317.

[0207] Since the display device of this embodiment has a protective layer 115 (and a protective layer 121) with high barrier properties in contact with the light-emitting element, various components can be formed directly on the light-emitting element. FIG. 11(A) shows an example in which a colored layer, a light-shielding layer BM, and a detection element TC are provided on the light-emitting element. By forming a touch sensor on the light-emitting element, the display device can be made thinner and lighter than a configuration in which a separately formed touch sensor is attached to the display device. This makes it possible to increase the flexibility of the display device and to realize thinner and lighter electronic devices incorporating the display device.

[0208] Among the conductive layers included in the input device 310 shown in FIGS. 9 and 10, the conductive layers (electrodes 331, 332, etc.) overlapping with the light-emitting region of the light-emitting element are made of a material that transmits visible light.

[0209] In addition, as in the detection element TC shown in FIG. 11(A) and FIG. 11(B), when the electrodes 331 and 332 are provided at positions that do not overlap with the light-emitting region of the light-emitting element, the electrodes 331 and 332 can be made of a material that blocks visible light. Therefore, the electrodes 331 and 332 can be made of a material with low resistivity, such as a metal. For example, it is preferable to use a metal mesh as the wiring and electrodes of the touch sensor. This can reduce the resistance of the wiring and electrodes of the touch sensor. In addition, it is suitable as a touch sensor for a large display device. In general, metal is a material with high reflectivity, but it can be made dark by performing an oxidation process or the like. Therefore, even when viewed from the display surface side, it is possible to suppress a decrease in visibility due to reflection of external light.

[0210] The wiring and the electrode may be formed by laminating a metal layer and a layer with low reflectance (also called a "dark layer"). Examples of the dark layer include a layer containing copper oxide, copper chloride or tellurium chloride. The dark layer may be formed using metal particles such as Ag particles, Ag fibers, and Cu particles, nanocarbon particles such as carbon nanotubes (CNTs) and graphene, and conductive polymers such as PEDOT, polyaniline, and polypyrrole.

[0211] Furthermore, by providing the circular polarizer 390, it is possible to prevent the electrodes 331 and 332 from being viewed by the user. Alternatively, by providing a light-shielding layer BM on the display surface side of the electrodes 331 and 332, it is possible to prevent the electrodes 331 and 332 from being viewed by the user. FIG 11B shows an example in which the light-shielding layer BM is provided on the insulating layer 391, not on the protective layer 121.

[0212] As shown in Fig. 12(A) and Fig. 12(B), the semi-transmissive layer 116 may be used as an electrode of a touch sensor. Fig. 12(A) shows an example in which the semi-transmissive layer 116 and an electrode 331 on the planarizing layer 122 are used as a pair of electrodes of the detection element TC. Fig. 12(B) shows an example in which the semi-transmissive layer 116a and the semi-transmissive layer 116b are used as a pair of electrodes of the detection element TC.

[0213] In the cross-sectional structure shown in Fig. 12(A), the stacked structure from the substrate 361 to the planarization layer 122 and the stacked structure from the insulating layer 391 to the substrate 371 are similar to the cross-sectional structure shown in Fig. 11(A). Note that an insulating material is used for the light-shielding layer BM. An electrode 331 is provided on the planarization layer 122, and an insulating layer 391 is provided on the electrode 331.

[0214] In the cross-sectional structure shown in FIG. 12(B), the laminated structure from the substrate 361 to the protective layer 115 and the laminated structure from the insulating layer 391 to the substrate 371 are similar to those shown in FIG. 11(B). Semi-transmissive layers 116a and 116b are provided on the protective layer 115. A protective layer 121 is provided on the semi-transmissive layers 116a and 116b. A colored layer CFR is provided on the protective layer 121, and a planarizing layer 122 is provided on the colored layer CFR. An opening reaching the semi-transmissive layer 116a is provided in the protective layer 121 and the planarizing layer 122, and an electrode 331 is provided to cover the opening. The two semi-transmissive layers 116a are electrically connected to each other via the electrode 331. An insulating layer 391 is provided on the electrode 331.

[0215] 12(A) and 12(B), the semi-transparent layer also serves as an electrode of the sensing element TC, which is preferable because it can simplify the manufacturing process of the sensing element TC and also makes it possible to reduce the thickness of the touch panel.

[0216] When the semi-transmissive layer is used as an electrode of a touch sensor, a configuration in which a pulse potential is supplied to the semi-transmissive layer, or a configuration in which the semi-transmissive layer is electrically connected to a detection circuit (sense amplifier) ​​can be applied.

[0217] 12(A) and 12(B) show an example in which the semi-transmissive layer is used as an electrode of a capacitive touch sensor, but the sensor type is not limited thereto. For example, the semi-transmissive layer may be used as an electrode of a resistive touch sensor.

[0218] [Transistor] Next, a transistor that can be used in a display device will be described.

[0219] The structure of the transistor included in the display device is not particularly limited. For example, the transistor may be a planar type transistor, a staggered type transistor, or an inverted staggered type transistor. In addition, the transistor may have either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below a channel.

[0220] 13A and 13B show examples of the structure of transistors. Each transistor is provided between an insulating layer 141 and an insulating layer 208. The insulating layer 141 preferably functions as a base film. The insulating layer 208 preferably functions as a planarization film.

[0221] 13A is a bottom-gate transistor including a metal oxide in the semiconductor layer 204. The metal oxide can function as an oxide semiconductor.

[0222] An oxide semiconductor is preferably used as the semiconductor of the transistor. A semiconductor material having a wider band gap and a lower carrier density than silicon is preferably used because the current in the off state of the transistor can be reduced.

[0223] The transistor 220 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, a conductive layer 203b, and a semiconductor layer 204. The conductive layer 201 functions as a gate. The insulating layer 202 functions as a gate insulating layer. The semiconductor layer 204 overlaps with the conductive layer 201 with the insulating layer 202 interposed therebetween. The conductive layer 203a and the conductive layer 203b are each electrically connected to the semiconductor layer 204. The transistor 220 is preferably covered with an insulating layer 211 and an insulating layer 212. Various inorganic insulating films can be used for the insulating layer 211 and the insulating layer 212. In particular, an oxide insulating film is suitable for the insulating layer 211, and a nitride insulating film is suitable for the insulating layer 212.

[0224] A transistor 230 illustrated in FIG. 13B is a top-gate transistor having polysilicon in a semiconductor layer.

[0225] The transistor 230 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, a conductive layer 203b, a semiconductor layer, and an insulating layer 213. The conductive layer 201 functions as a gate. The insulating layer 202 functions as a gate insulating layer. The semiconductor layer includes a channel formation region 214a and a pair of low-resistance regions 214b. The semiconductor layer may further include an LDD (lightly doped drain) region. FIG. 13B illustrates an example in which an LDD region 214c is provided between the channel formation region 214a and the low-resistance region 214b. The channel formation region 214a overlaps with the conductive layer 201 through the insulating layer 202. The conductive layer 203a is electrically connected to one of the pair of low-resistance regions 214b through openings provided in the insulating layer 202 and the insulating layer 213. Similarly, the conductive layer 203b is electrically connected to the other of the pair of low-resistance regions 214b. Various inorganic insulating films can be used for the insulating layer 213. In particular, a nitride insulating film is suitable for the insulating layer 213.

[0226] [Metal oxides] The semiconductor layer is preferably formed using a metal oxide that functions as an oxide semiconductor. Metal oxides that can be used for the semiconductor layer will be described below.

[0227] The metal oxide preferably contains at least indium or zinc. In particular, it is preferable that the metal oxide contains indium and zinc. In addition to these, it is preferable that the metal oxide contains aluminum, gallium, yttrium, tin, etc. In addition, it may contain one or more elements selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc.

[0228] Here, the case where the metal oxide is an In-M-Zn oxide having indium, an element M, and zinc is considered. The element M is aluminum, gallium, yttrium, tin, or the like. Other elements applicable to the element M include boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like. However, there are cases where the element M may be a combination of a plurality of the above-mentioned elements.

[0229] In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Metal oxides containing nitrogen may also be referred to as metal oxynitrides. For example, metal oxides containing nitrogen, such as zinc oxynitride (ZnON), may be used for the semiconductor layer.

[0230] In this specification, etc., the term CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) may be used. CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0231] For example, a cloud-aligned composite (CAC)-OS can be used for the semiconductor layer.

[0232] CAC-OS or CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor as a whole. When CAC-OS or CAC-metal oxide is used in the active layer of a transistor, the conductive function is a function of flowing electrons (or holes) as carriers, and the insulating function is a function of not flowing electrons as carriers. By making the conductive function and the insulating function act complementarily, it is possible to impart a switching function (on / off function) to CAC-OS or CAC-metal oxide. By separating the respective functions in CAC-OS or CAC-metal oxide, it is possible to maximize both functions.

[0233] Moreover, the CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material. In addition, the conductive region may be observed to be connected in a cloud shape with a blurred periphery.

[0234] In addition, in the CAC-OS or CAC-metal oxide, the conductive regions and the insulating regions may each be dispersed in the material with a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less.

[0235] In addition, the CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, the CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In this configuration, when carriers are caused to flow, the carriers mainly flow in the component having the narrow gap. In addition, the component having the narrow gap acts complementarily on the component having the wide gap, and carriers also flow in the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the above CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force in the on state of the transistor, that is, a large on-current and a high field effect mobility can be obtained.

[0236] That is, CAC-OS or CAC-metal oxide can also be called a matrix composite or a metal matrix composite.

[0237] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors, such as c-axis aligned crystalline oxide semiconductors (CAAC-OS), polycrystalline oxide semiconductors, nanocrystalline oxide semiconductors (nc-OS), amorphous-like oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0238] CAAC-OS has a c-axis orientation and a distorted crystal structure in which multiple nanocrystals are connected in the ab-plane direction. The distortion refers to a portion where the lattice orientation changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple nanocrystals are connected.

[0239] Nanocrystals are basically hexagonal, but may be non-regular hexagonal. In addition, the lattice arrangement may be pentagonal or heptagonal due to the distortion. In CAAC-OS, it is difficult to confirm clear grain boundaries even in the vicinity of the distortion. In other words, it is found that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms in the ab-plane direction is not dense and the bond distance between atoms changes due to the substitution of metal elements.

[0240] CAAC-OS also tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M, Zn) layer) are stacked. Note that indium and element M can be substituted for each other, and when element M in an (M, Zn) layer is substituted for indium, it can also be represented as an (In, M, Zn) layer. When indium in an In layer is substituted for element M, it can also be represented as an (In, M) layer.

[0241] CAAC-OS is a metal oxide with high crystallinity. On the other hand, it is difficult to confirm clear crystal boundaries in CAAC-OS, so it is said that the decrease in electron mobility caused by crystal boundaries is unlikely to occur. In addition, since the crystallinity of metal oxides can be decreased by the inclusion of impurities or the generation of defects, CAAC-OS is unlikely to have impurities or defects (oxygen vacancies (V O : It is also called oxygen vacancy. ) Therefore, metal oxides with CAAC-OS have stable physical properties. Therefore, metal oxides with CAAC-OS are resistant to heat and highly reliable.

[0242] The nc-OS has periodic atomic arrangement in a microscopic region (for example, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In addition, the nc-OS does not show regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is seen throughout the film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor.

[0243] Indium-gallium-zinc oxide (hereinafter referred to as IGZO), a type of metal oxide containing indium, gallium, and zinc, may have a stable structure when made into the above-mentioned nanocrystals. In particular, since IGZO tends to have difficulty in crystal growth in the atmosphere, it may be structurally more stable when made into small crystals (for example, the above-mentioned nanocrystals) rather than large crystals (here, crystals of several mm or several cm).

[0244] The a-like OS is a metal oxide having a structure between the nc-OS and an amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.

[0245] Oxide semiconductors (metal oxides) have a variety of structures and each structure has different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS.

[0246] The metal oxide film functioning as the semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. The flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is not particularly limited. However, in order to obtain a transistor with high field effect mobility, the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0247] The energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more. By using a metal oxide having such a wide energy gap, the off-state current of the transistor can be reduced.

[0248] The metal oxide film can be formed by a sputtering method, or a PLD method, a PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like.

[0249] Materials that can be used for various conductive layers constituting the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys containing these as main components. Films containing these materials can be used as a single layer or a laminated structure. For example, there are a single layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a three-layer structure in which a titanium film or titanium nitride film is laminated on the titanium film or titanium nitride film, and a three-layer structure in which an aluminum film or copper film is laminated on the titanium film or titanium nitride film, and a three-layer structure in which an aluminum film or copper film is laminated on the molybdenum film or molybdenum nitride film is laminated on the molybdenum film or molybdenum nitride film is formed on the molybdenum film or molybdenum nitride film. Alternatively, oxides such as indium oxide, tin oxide, zinc oxide, etc. may be used. Furthermore, copper containing manganese is preferably used because it enhances the controllability of the shape by etching.

[0250] Examples of materials that can be used for various insulating layers constituting a display device include resins such as acrylic, epoxy, and silicone, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0251] As described above, the display device of the present embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. This makes it possible to increase the light extraction efficiency of both light with high color purity and white light. Therefore, it is possible to realize a display device with high display quality and low power consumption.

[0252] This embodiment mode can be combined with other embodiment modes and examples as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0253] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0254] FIG. 14 shows a cross-sectional view of the display device 200A.

[0255] The display device 200A includes a light emitting element 110W, a light emitting element 110R, a light emitting element 110G, a capacitor 440, a transistor 410, and the like.

[0256] The configurations of the light emitting element 110W, the light emitting element 110R, and the light emitting element 110G are the same as those in Fig. 4(A), and therefore detailed description thereof will be omitted. In this embodiment, an example is shown in which an inorganic insulating film is used for the insulating layer 104. On the protective layer 121, a colored layer CFR overlapping the light emitting region of the light emitting element 110R and a colored layer CFG overlapping the light emitting region of the light emitting element 110G are provided.

[0257] The display device of the present embodiment has both a light-emitting element to which a microcavity structure is applied and a light-emitting element to which a microcavity structure is not applied. This makes it possible to increase the light extraction efficiency of both light with high color purity and white light. Therefore, it is possible to realize a display device with high display quality and low power consumption.

[0258] In this embodiment, the substrate 101 is a substrate provided with a semiconductor circuit that functions as a circuit for driving a light-emitting element (also referred to as a pixel circuit) and a driver circuit (either a gate driver or a source driver, or both) for driving the pixel circuit.

[0259] The transistor 410 has a channel formation region in a substrate 401. As the substrate 401, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 410 includes a part of the substrate 401, a conductive layer 411, a pair of low-resistance regions 412, an insulating layer 413, an insulating layer 414, and the like. The conductive layer 411 functions as a gate electrode. The insulating layer 413 is located between the substrate 401 and the conductive layer 411 and functions as a gate insulating layer. The pair of low-resistance regions 412 are regions in which the substrate 401 is doped with impurities, and each of the pair of low-resistance regions 412 functions as a source or a drain. The insulating layer 414 is provided to cover a side surface of the conductive layer 411. The transistors 410 are electrically isolated by an element isolation region 419.

[0260] An insulating layer 461 is provided to cover the transistor 410 , and a capacitor 440 is provided over the insulating layer 461 .

[0261] The capacitor 440 includes a conductive layer 441, a conductive layer 442, and an insulating layer 443 located therebetween. The conductive layer 441 functions as one electrode of the capacitor 440, the conductive layer 442 functions as the other electrode of the capacitor 440, and the insulating layer 443 functions as a dielectric of the capacitor 440.

[0262] The conductive layer 441 is provided over an insulating layer 461 and is electrically connected to one of the source and the drain of the transistor 410 through a plug 471 embedded in the insulating layer 461. An insulating layer 443 is provided to cover the conductive layer 441. The conductive layer 442 is provided in a region overlapping with the conductive layer 441 with the insulating layer 443 interposed therebetween.

[0263] An insulating layer 492 is provided to cover the capacitor 440, and the light-emitting elements 110W, 110R, and 110G are provided on the insulating layer 492.

[0264] The display device 200A has a substrate 371 on the viewing side. The substrate 371 and the substrate 401 are bonded together by an adhesive layer 317. As the substrate 371, a substrate having transparency to visible light, such as a glass substrate, a quartz substrate, a sapphire substrate, or a plastic substrate, can be used.

[0265] With this configuration, a display device with extremely high definition and high display quality can be realized.

[0266] FIG. 15 shows a cross-sectional view of the display device 200B.

[0267] The display device 200B differs from the display device 200A shown in FIG. 14 in that it does not include the transistor 410 but includes a transistor 420, and in that a plug 471 includes conductive layers 471a and 471b.

[0268] The transistor 420 includes a metal oxide in a channel formation region. The metal oxide can function as an oxide semiconductor.

[0269] The transistor 420 includes a semiconductor layer 421, a metal oxide layer 422, an insulating layer 423, a conductive layer 424, a conductive layer 425, an insulating layer 426, a conductive layer 427, and the like.

[0270] The substrate 401a on which the transistor 420 is provided can be an insulating substrate or a semiconductor substrate.

[0271] An insulating layer 432 is provided over the substrate 401a. The insulating layer 432 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 401a to the transistor 420 and prevents oxygen from being released from the semiconductor layer 421 toward the insulating layer 432. The insulating layer 432 can be, for example, a film through which hydrogen and oxygen are less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0272] A conductive layer 427 is provided over the insulating layer 432, and an insulating layer 426 is provided to cover the conductive layer 427. The conductive layer 427 functions as a first gate electrode of the transistor 420, and part of the insulating layer 426 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 426 that is in contact with the semiconductor layer 421. The top surface of the insulating layer 426 is preferably planarized.

[0273] The semiconductor layer 421 is provided over the insulating layer 426. The semiconductor layer 421 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor characteristics.

[0274] The pair of conductive layers 425 are provided on and in contact with the semiconductor layer 421 and function as a source electrode and a drain electrode. The metal oxide layer 422 is provided between the pair of conductive layers 425 to cover a top surface of the semiconductor layer 421. The metal oxide layer 422 preferably contains a metal oxide that can be used for the semiconductor layer 421. Over the metal oxide layer 422, an insulating layer 423 functioning as a second gate insulating layer and a conductive layer 424 functioning as a second gate electrode are stacked.

[0275] Further, an insulating layer 428 is provided to cover the transistor 420, and an insulating layer 461 is provided over the insulating layer 428. The insulating layer 428 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing from the insulating layer 461 or the like to the transistor 420 and to prevent oxygen from being released from the semiconductor layer 421 to the insulating layer 428 side. The insulating layer 428 can be an insulating film similar to the insulating layer 432.

[0276] A plug 471 electrically connected to the conductive layer 425 is provided so as to be embedded in the insulating layer 461. Here, the plug 471 preferably has a conductive layer 471a covering the side surface of the opening of the insulating layer 461 and part of the upper surface of the conductive layer 425, and a conductive layer 471b in contact with the upper surface of the conductive layer 471a. In this case, the conductive layer 471a is preferably made of a conductive material through which hydrogen and oxygen are unlikely to diffuse.

[0277] FIG. 16 shows a cross-sectional view of the display device 200C.

[0278] The display device 200C includes a transistor 410 having a channel formation region and a transistor 420 having a metal oxide in the channel formation region, which are stacked over a substrate 401.

[0279] An insulating layer 461 is provided to cover the transistor 410, and a conductive layer 451 is provided over the insulating layer 461. An insulating layer 462 is provided to cover the conductive layer 451, and a conductive layer 452 is provided over the insulating layer 462. The conductive layer 451 and the conductive layer 452 each function as a wiring. In addition, an insulating layer 463 and an insulating layer 432 are provided to cover the conductive layer 452, and a transistor 420 is provided over the insulating layer 432. In addition, an insulating layer 465 is provided to cover the transistor 420, and a capacitor 440 is provided over the insulating layer 465. The capacitor 440 and the transistor 420 are electrically connected to each other through a plug 474.

[0280] The transistor 420 can be used as a transistor that constitutes a pixel circuit. The transistor 410 can be used as a transistor that constitutes a pixel circuit or a driver circuit (one or both of a gate driver and a source driver) for driving the pixel circuit. The transistor 410 and the transistor 420 can be used as transistors that constitute various circuits such as an arithmetic circuit or a memory circuit.

[0281] With this configuration, not only the pixel circuit but also the driver circuit and the like can be formed directly under the light-emitting element, so that the display device can be made smaller than when the driver circuit is provided outside the display unit. Also, a display device with a narrow frame (narrow non-display area) can be realized.

[0282] FIG. 17 shows a cross-sectional view of a display device 200D.

[0283] The display device 200D includes a transistor 410 having a channel formation region, a transistor 430 having a metal oxide in its channel formation region, and a transistor 420 having a metal oxide in its channel formation region, stacked over a substrate 401. That is, the display device 200D differs from the display device 200C in that two transistors having metal oxide in their channel formation regions are stacked.

[0284] The transistor 430 has a similar structure to the transistor 420 except that the transistor 430 does not have a first gate electrode. Note that the transistor 430 may have a first gate electrode.

[0285] An insulating layer 463 and an insulating layer 431 are provided to cover the conductive layer 452, and a transistor 430 is provided over the insulating layer 431. The transistor 430 and the conductive layer 452 are electrically connected to each other through a plug 473, a conductive layer 453, and a plug 472. In addition, an insulating layer 464 and an insulating layer 432 are provided to cover the conductive layer 453, and a transistor 420 is provided over the insulating layer 432.

[0286] For example, the transistor 420 functions as a transistor for controlling a current flowing through a light-emitting element, the transistor 430 functions as a selection transistor for controlling a selection state of a pixel, and the transistor 410 functions as a transistor that constitutes a driver circuit for driving a pixel.

[0287] By stacking three or more transistors in this manner, the area occupied by a pixel can be further reduced, and a high-definition display device can be realized.

[0288] 18(A) and 18(B) are perspective views of the display module.

[0289] 18A includes a display device 400 and an FPC 490. As the display device 400, any of the display devices 200A to 200D shown in FIGS.

[0290] The display module 480 includes a substrate 401 and a substrate 371. The display module 480 includes a display unit 481.

[0291] 18B is a perspective view showing a schematic configuration on the substrate 401 side. The display portion 481 has a configuration in which a circuit portion 482, a pixel circuit portion 483, and a pixel portion 484 are stacked in this order over the substrate 401. Further, a terminal portion 485 for connecting to an FPC 490 is provided on the substrate 401 on the outer side of the display portion 481. The terminal portion 485 and the circuit portion 482 are electrically connected to each other through a wiring portion 486 including a plurality of wirings.

[0292] The pixel section 484 has a plurality of pixels 484a arranged in a matrix. An enlarged view of one pixel 484a is shown on the right side of Fig. 18(B). The pixel 484a has four sub-pixels of R (red), G (green), B (blue), and W (white).

[0293] The pixel circuit portion 483 has a plurality of pixel circuits 483a arranged in a matrix. One pixel circuit 483a is a circuit that controls the emission of four sub-pixels included in one pixel 484a. One pixel circuit 483a may be configured to have four circuits that control the emission of one sub-pixel. For example, the pixel circuit 483a may have at least one selection transistor, one current control transistor (drive transistor), and a capacitance element for each sub-pixel. At this time, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active matrix display device.

[0294] The circuit portion 482 includes a circuit for driving each pixel circuit 483a of the pixel circuit portion 483. For example, the circuit portion 482 preferably includes one or both of a gate driver and a source driver. In addition, the circuit portion 482 may include an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0295] The FPC 490 functions as wiring for supplying a video signal and a power supply potential from the outside to the circuit portion 482. In addition, an IC may be mounted on the FPC 490.

[0296] The display module 480 can be configured such that the pixel circuit section 483, the circuit section 482, and the like are stacked below the pixel section 484, so that the aperture ratio (effective display area ratio) of the display section 481 can be extremely high. For example, the aperture ratio of the display section 481 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 484a can be arranged at an extremely high density, so that the resolution of the display section 481 can be extremely high. For example, it is preferable that the pixels 484a are arranged in the display section 481 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0297] The high-definition display module 480 can be suitably used in VR (Virtual Reality) devices such as head-mounted displays, or glasses-type AR (Augmented Reality) devices. Even when the high-definition display module 480 is used in a device in which the display unit is viewed through a lens, the pixels of the display unit magnified by the lens are unlikely to be visible to the user, and a highly immersive display can be performed. The display module 480 can also be suitably used in electronic devices having a relatively small display unit. For example, it can be suitably used in the display unit of a wearable electronic device such as a smart watch.

[0298] This embodiment mode can be combined with other embodiment modes as appropriate.

[0299] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0300] A block diagram of a pixel is shown in Fig. 19A. The pixel of this embodiment mode has a memory in addition to a switching transistor (Switching Tr), a driving transistor (Driving Tr), and a light emitting element (OLED).

[0301] The memory is supplied with data DATA_W. By supplying the data DATA_W to the pixel in addition to the display data DATA, the current flowing through the light emitting element increases, and the display device can express high luminance.

[0302] The potential of the data DATA_W is V w , the potential of the display data DATA is V data , memory capacity is C w When expressed as above, the gate voltage of the driving transistor V g can be expressed by equation (1).

[0303]

number

[0304] V w =V data Then, V g V data A larger voltage is applied and a larger current can flow, that is, the current flowing through the light emitting element increases, resulting in higher luminance.

[0305] FIG. 19B shows a specific circuit diagram of a pixel.

[0306] The pixel shown in FIG. 19B includes a transistor M1, a transistor M2, a transistor M3, a transistor M4, a transistor M5, a capacitor Cs, a capacitor Cw, and a light-emitting element .

[0307] One of the source or drain of the transistor M1 is electrically connected to one electrode of the capacitance element Cw. The other electrode of the capacitance element Cw is electrically connected to one of the source or drain of the transistor M4. One of the source or drain of the transistor M4 is electrically connected to the gate of the transistor M2. The gate of the transistor M2 is electrically connected to one electrode of the capacitance element Cs. The other electrode of the capacitance element Cs is electrically connected to one of the source or drain of the transistor M2. One of the source or drain of the transistor M2 is electrically connected to one of the source or drain of the transistor M5. One of the source or drain of the transistor M5 is electrically connected to one of the source or drain of the transistor M3. The other of the source or drain of the transistor M5 is electrically connected to one electrode of the light-emitting element 124. Each transistor shown in FIG. 19B has a backgate electrically connected to the gate, but the connection of the backgate is not limited to this. In addition, the transistor does not need to have a backgate.

[0308] Here, a node to which the other electrode of the capacitance element Cw, one of the source or drain of the transistor M4, the gate of the transistor M2, and one electrode of the capacitance element Cs are connected is referred to as a node NM, and a node to which the other of the source or drain of the transistor M5 and one electrode of the light emitting element 124 are connected is referred to as a node NA.

[0309] The gate of transistor M1 is electrically connected to the wiring G1. The gate of transistor M3 is electrically connected to the wiring G1. The gate of transistor M4 is electrically connected to the wiring G2. The gate of transistor M5 is electrically connected to the wiring G3. The other of the source and the drain of transistor M1 is electrically connected to the wiring DATA. The other of the source and the drain of transistor M3 is electrically connected to the wiring V0. The other of the source and the drain of transistor M4 is electrically connected to the wiring DATA_W.

[0310] The other of the source and the drain of the transistor M2 is electrically connected to a power supply line 127 (high potential). The other electrode of the light emitting element 124 is electrically connected to a common wiring 129. Note that any potential can be supplied to the common wiring 129.

[0311] The wirings G1, G2, and G3 can function as signal lines for controlling the operation of the transistors. The wiring DATA can function as a signal line for supplying an image signal to the pixel. The wiring DATA_W can function as a signal line for writing data to the memory circuit MEM. The wiring DATA_W can function as a signal line for supplying a correction signal to the pixel. The wiring V0 can function as a monitor line for acquiring the electrical characteristics of the transistor M4. The writing of the image signal can also be stabilized by supplying a specific potential from the wiring V0 to one electrode of the capacitance element Cs via the transistor M3.

[0312] Transistor M2, transistor M4, and capacitor element Cw constitute the memory circuit MEM. Node NM is a memory node, and by turning on transistor M4, the signal supplied to wiring DATA_W can be written to node NM. By using a transistor with an extremely low off-current for transistor M4, the potential of node NM can be held for a long time.

[0313] For transistor M4, for example, a transistor using a metal oxide in the channel formation region (hereinafter, OS transistor) can be used. Thereby, the off-current of transistor M4 can be made extremely low, and the potential of node NM can be held for a long time. At this time, it is preferable to use an OS transistor also for other transistors constituting the pixel. A specific example of the metal oxide can be referred to in Embodiment 1.

[0314] Since the OS transistor has a large energy gap, it exhibits extremely low off-current characteristics. Further, the OS transistor has characteristics different from those of a transistor having Si in the channel formation region (hereinafter, Si transistor) such as impact ionization, avalanche breakdown, and short-channel effect not occurring, and a highly reliable circuit can be formed.

[0315] Further, an Si transistor may be applied to transistor M4. At this time, it is preferable to use an Si transistor also for other transistors constituting the pixel.

[0316] Examples of the Si transistor include a transistor having amorphous silicon, a transistor having crystalline silicon (typically, low-temperature polysilicon), and a transistor having single-crystalline silicon.

[0317] Further, one pixel may have both an OS transistor and an Si transistor.

[0318] In the pixel, a signal written to the node NM can be capacitively coupled with an image signal supplied from the wiring DATA and output to the node NA. The transistor M1 can have a function of selecting a pixel. The transistor M5 can have a function as a switch that controls light emission of the light-emitting element 124.

[0319] For example, if a signal written to node NM from wiring DATA_W is th ), the transistor M2 becomes conductive before the image signal is written, causing the light-emitting element 124 to emit light. Therefore, it is preferable to provide a transistor M5 and turn on the transistor M5 after the potential of the node NM is determined, thereby causing the light-emitting element 124 to emit light.

[0320] That is, if a desired correction signal is stored in the node NM, the correction signal can be added to the supplied image signal. Note that the correction signal may be attenuated by elements on the transmission path, so it is preferable to generate the correction signal taking such attenuation into consideration.

[0321] The operation of the pixel shown in Fig. 19(B) will be described in detail using the timing charts shown in Fig. 20(A) and Fig. 20(B). Note that the correction signal (Vp) supplied to the wiring DATA_W can be any positive or negative signal, but here, a case where a positive signal is supplied will be described. In the following description, a high potential is represented by "H" and a low potential is represented by "L".

[0322] First, the operation of writing the correction signal (Vp) to the node NM will be described with reference to FIG. 20(A). This operation may be performed for each frame, and it is sufficient to write at least once before supplying the image signal. In addition, a refresh operation may be performed as appropriate, and the same correction signal may be rewritten to the node NM.

[0323] At time T1, when the potential of wiring G1 is “H”, the potential of wiring G2 is “L”, the potential of wiring G3 is “L”, and the potential of wiring DATA is “L”, the transistor M1 becomes conductive and the potential of the other electrode of the capacitance element Cw becomes “L”.

[0324] This operation is a reset operation for performing a later capacitive coupling operation. Furthermore, before time T1, the light emitting element 124 in the previous frame is performing a light emitting operation, but since the reset operation changes the potential of the node NM and changes the current flowing through the light emitting element 124, it is preferable to make the transistor M5 non-conductive and stop the light emitting element 124 from emitting light.

[0325] At time T2, when the potential of wiring G1 is set to “H”, the potential of wiring G2 is set to “H”, the potential of wiring G3 is set to “L”, and the potential of wiring DATA is set to “L”, transistor M4 becomes conductive and the potential of wiring DATA_W (correction signal (Vp)) is written to node NM.

[0326] At time T3, when the potential of the wiring G1 is set to “H”, the potential of the wiring G2 is set to “L”, the potential of the wiring G3 is set to “L”, and the potential of the wiring DATA is set to “L”, the transistor M4 becomes non-conductive and the correction signal (Vp) is held at the node NM.

[0327] At time T4, when the potential of the wiring G1 is set to "L", the potential of the wiring G2 is set to "L", the potential of the wiring G3 is set to "L", and the potential of the wiring DATA is set to "L", the transistor M1 becomes non-conductive and the write operation of the correction signal (Vp) is completed.

[0328] Next, the operation of correcting the image signal (Vs) and the operation of causing the light emitting element 124 to emit light will be described with reference to FIG.

[0329] At time T11, when the potential of the wiring G1 is "H", the potential of the wiring G2 is "L", the potential of the wiring G3 is "L", and the potential of the wiring DATA_W is "L", the transistor M1 is turned on, and the potential of the wiring DATA is added to the potential of the node NM by the capacitive coupling of the capacitance element Cw. That is, the potential of the node NM becomes (Vs+Vp) where the correction signal (Vp) is added to the image signal (Vs).

[0330] At time T12, when the potential of the wiring G1 is set to "L", the potential of the wiring G2 is set to "L", the potential of the wiring G3 is set to "L", and the potential of the wiring DATA_W is set to "L", the transistor M1 is turned off, and the potential of the node NM is determined to be Vs+Vp.

[0331] At time T13, when the potential of the wiring G1 is "L", the potential of the wiring G2 is "L", the potential of the wiring G3 is "H", and the potential of the wiring DATA_W is "L", the transistor M5 is turned on, the potential of the node NA becomes Vs+Vp, and the light emitting element 124 emits light. Strictly speaking, the potential of the node NA changes from Vs+Vp to the threshold voltage (V th ), but here, V th is set to a value that is small enough to be ignored.

[0332] The above is the operation of correcting the image signal (Vs) and the operation of making the light-emitting element 124 emit light. Note that the operation of writing the correction signal (Vp) and the operation of inputting the image signal (Vs) described above may be performed consecutively, but it is preferable to perform the operation of inputting the image signal (Vs) after writing the correction signal (Vp) to all pixels. In one embodiment of the present invention, the same image signal can be supplied to multiple pixels simultaneously, so that the operating speed can be improved by writing the correction signal (Vp) to all pixels first.

[0333] As described above, by making the light emitting element emit light using the image signal and the correction signal, the current flowing through the light emitting element can be increased, and high brightness can be expressed. Since a voltage equal to or higher than the output voltage of the source driver can be applied as the gate voltage of the drive transistor, the power consumption of the source driver can be reduced.

[0334] This embodiment mode can be appropriately combined with other embodiment modes and examples.

[0335] (Embodiment 4) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0336] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has high display quality and low power consumption. In addition, the display device of one embodiment of the present invention can be easily made large and highly precise. Therefore, the display device can be used in the display portion of various electronic devices.

[0337] The display unit of the electronic device of this embodiment can display images having resolutions of, for example, full high definition, 4K2K, 8K4K, 16K8K, or higher.

[0338] Examples of electronic devices include electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.

[0339] The electronic device of the present embodiment can be installed along the curved surface of the inner or outer wall of a house or building, or the interior or exterior of an automobile.

[0340] The electronic device of this embodiment may have an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display unit. In addition, when the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0341] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0342] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out a program or data recorded on a recording medium, etc.

[0343] 21A shows an example of a television set. In a television set 7100, a display portion 7000 is incorporated in a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0344] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0345] 21A can be operated using an operation switch provided on the housing 7101 or a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using an operation key or a touch panel provided on the remote control 7111, a channel and a volume can be operated, and an image displayed on the display portion 7000 can be operated.

[0346] The television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. By connecting to a wired or wireless communication network via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0347] Fig. 21(B) shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated in the housing 7211.

[0348] The display device according to an aspect of the present invention can be applied to the display unit 7000.

[0349] Figs. 21(C) and 21(D) show an example of digital signage.

[0350] The digital signage 7300 shown in Fig. 21(C) has a housing 7301, a display unit 7000, a speaker 7303, etc. Furthermore, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0351] Fig. 21(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0352] In Figs. 21(C) and 21(D), the display device according to an aspect of the present invention can be applied to the display unit 7000.

[0353] The larger the display unit 7000 is, the more information can be provided at once. Also, the larger the display unit 7000 is, the more easily it catches people's eyes, and for example, the advertising effect can be enhanced.

[0354] By applying a touch panel to the display unit 7000, not only can an image or a video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation.

[0355] 21(C) and 21(D), the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0356] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). This allows an unspecified number of users to participate in and enjoy the game at the same time.

[0357] FIG. 22A is a diagram showing the appearance of the camera 8000 with the viewfinder 8100 attached.

[0358] The camera 8000 includes a housing 8001, a display unit 8002, an operation button 8003, a shutter button 8004, etc. A detachable lens 8006 is attached to the camera 8000. Note that the lens 8006 and the housing of the camera 8000 may be integrated together.

[0359] The camera 8000 can capture an image by pressing a shutter button 8004 or touching a display unit 8002 that functions as a touch panel.

[0360] The housing 8001 has a mount having electrodes, and can be connected to a strobe device or the like in addition to the finder 8100 .

[0361] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0362] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display an image received from the camera 8000 on a display unit 8102.

[0363] The button 8103 has a function such as a power button.

[0364] The display device of one embodiment of the present invention can be applied to a display portion 8002 of a camera 8000 and a display portion 8102 of a viewfinder 8100. Note that the camera 8000 may have a built-in viewfinder.

[0365] FIG. 22B is a diagram showing the external appearance of the head mounted display 8200.

[0366] The head mounted display 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 includes a built-in battery 8206.

[0367] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movements of the user's eyeballs and eyelids as an input means.

[0368] The mounting unit 8201 may have a function of recognizing the line of sight by providing a plurality of electrodes at positions that contact the user, capable of detecting a current that flows with the movement of the user's eyeballs. The mounting unit 8201 may also have a function of monitoring the user's pulse rate based on the current that flows through the electrodes. The mounting unit 8201 may also have various sensors, such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying the user's biological information on the display unit 8204 and a function of changing the image displayed on the display unit 8204 according to the movement of the user's head.

[0369] The display device according to one aspect of the present invention can be applied to the display unit 8204.

[0370] FIGS. 22(C), 22(D), and 22(E) are diagrams showing the appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0371] The user can visually recognize the display on the display unit 8302 through the lenses 8305. It is preferable to arrange the display unit 8302 in a curved shape because the user can feel a high sense of immersion. Also, by visually recognizing different images displayed in different regions of the display unit 8302 through the lenses 8305, three-dimensional display using parallax or the like can be performed. Note that the configuration is not limited to providing one display unit 8302, and two display units 8302 may be provided, with one display unit arranged for each eye of the user.

[0372] The display device according to one aspect of the present invention can be applied to the display unit 8302. Since the display device according to one aspect of the present invention has extremely high definition, even when the display is enlarged and visually recognized using the lenses 8305 as shown in FIG. 22(E), it is difficult for the user to visually recognize the pixels. That is, using the display unit 8302, it is possible to allow the user to visually recognize a highly realistic video.

[0373] The electronic device shown in FIGS. 23(A) to 23(F) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays), a microphone 9008, and the like.

[0374] 23(A) to 23(F) have various functions. For example, the electronic devices may have a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing a program or data recorded on a recording medium, and the like. Note that the functions of the electronic devices are not limited to these, and the electronic devices may have various functions. The electronic devices may have multiple display units. In addition, the electronic devices may have a function of providing a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function of displaying the captured images on the display unit, and the like.

[0375] The electronic devices shown in FIGS. 23A to 23F will be described in detail below.

[0376] FIG. 23A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on a plurality of surfaces. FIG. 23A shows an example in which three icons 9050 are displayed. Information 9051 shown in a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming e-mail, SNS, and phone calls, titles of e-mail and SNS, sender names, date and time, time, remaining battery level, and antenna reception strength. Alternatively, the icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0377] 23(B) is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of a display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and determine, for example, whether to answer a call.

[0378] 23C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch. The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0379] 23(D), 23(E), and 23(F) are perspective views showing a foldable mobile information terminal 9201. FIG. 23(D) shows the mobile information terminal 9201 in an unfolded state, FIG. 23(F) shows the mobile information terminal 9201 in a folded state, and FIG. 23(E) shows the mobile information terminal 9201 in a state in the middle of changing from one of FIG. 23(D) and FIG. 23(F) to the other. The mobile information terminal 9201 has excellent portability in a folded state, and has excellent viewability of the display due to a seamless wide display area in an unfolded state. A display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0380] This embodiment mode can be appropriately combined with other embodiment modes and examples. [Explanation of symbols]

[0381] M1: transistor, M2: transistor, M3: transistor, M4: transistor, M5: transistor, 10A: display device, 10B: display device, 15A: display device, 71: display unit, 74: FPC, 75: connection unit, 78: drive circuit, 101: substrate, 104: insulating layer, 110a: light-emitting element, 110b: light-emitting element, 110B: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 110W: light-emitting element, 111: pixel electrode, 112a: optical adjustment layer, 112b: optical adjustment layer, 112B: optical adjustment layer, 112G: optical adjustment layer, 112R: optical adjustment layer, 112W : optical adjustment layer, 113: EL layer, 113EM: light, 114: common electrode, 115: protective layer, 115n: region, 116: semi-transmissive layer, 116a: semi-transmissive layer, 116b: semi-transmissive layer, 117: reflective layer, 118: pixel electrode, 119a: optical adjustment layer, 119b: optical adjustment layer, 119c: optical adjustment layer, 120: conductive layer, 121: protective layer, 122: flattening layer, 123: functional layer, 124: light-emitting element, 125: protective layer, 127: power supply line, 129: common wiring, 130: pixel, 141: insulating layer, 200A: display device, 200B: display device, 200C: display device, 200D: display device, 2 01: conductive layer, 202: insulating layer, 203a: conductive layer, 203b: conductive layer, 204: semiconductor layer, 208: insulating layer, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214a: channel formation region, 214b: low resistance region, 214c: LDD region, 220: transistor, 230: transistor, 300: touch panel, 301: transistor, 303: transistor, 306: connection portion, 307: wiring, 308: connection portion, 309: connector, 310: input device, 311: gate insulating layer, 312: insulating layer, 313: insulating layer, 314: insulating layer, 315: insulating layer, 31 7: adhesive layer, 318: adhesive layer, 319: connector, 330: substrate, 331: electrode, 332: electrode, 333: electrode, 334: electrode, 341: wiring, 342: wiring, 350: FPC, 351: IC, 356: conductive layer, 356a: conductive layer, 356b: conductive layer, 357a: conductive layer, 357b: conductive layer, 358: conductive layer, 361: substrate, 363: adhesive layer, 365: insulating layer, 367: insulating layer, 370: display device, 371: substrate, 374: IC, 387: intersection, 390: circular polarizer, 391: insulating layer, 392: insulating layer, 395: insulating layer, 396: adhesive layer, 400: display device,401: substrate, 401a: substrate, 410: transistor, 411: conductive layer, 412: low resistance region, 413: insulating layer, 414: insulating layer, 419: element isolation region, 420: transistor, 421: semiconductor layer, 422: metal oxide layer, 423: insulating layer, 424: conductive layer, 425: conductive layer, 426: insulating layer, 427: conductive layer, 428: insulating layer, 430: transistor, 431: insulating layer, 432: insulating layer, 440: capacitance element, 441: conductive layer, 442: conductive layer, 443: insulating layer, 451: conductive layer, 452: conductive layer, 453: conductive layer, 461: insulating layer, 462: insulating layer Edge layer, 463: insulating layer, 464: insulating layer, 465: insulating layer, 471: plug, 471a: conductive layer, 471b: conductive layer, 472: plug, 473: plug, 474: plug, 480: display module, 481: display unit, 482: circuit unit, 483: pixel circuit unit, 483a: pixel circuit, 484: pixel unit, 484a: pixel, 485: terminal unit, 486: wiring unit, 490: FPC, 492: insulating layer, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control unit, 7200: notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8000: Camera, 8001: Housing, 8002: Display, 8003: Operation button, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 8101: Housing, 8102: Display, 8103: Button, 8200: Head mounted display, 8201: Mounting part, 8202: lens, 8203: main body, 8204: display part, 8205: cable, 8206: battery, 8300: head mounted display, 8301: housing, 8302: display part, 8304: fixture, 8305: lens, 9000: housing, 9001: display part, 9003: speaker, 9005: operation key, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: portable information terminal, 9102: portable information terminal,9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, a conductive layer that transmits visible light, a second protective layer, and a semi-transparent layer; the light-emitting layer has a first region located on the first pixel electrode and a second region located on the second pixel electrode; the common electrode is located on the light-emitting layer; the first protective layer is located on the common electrode; the first protective layer does not overlap the first region; the first protective layer overlaps the second region; the conductive layer that transmits visible light is located on the common electrode and on the first protective layer; the second protective layer is located on the conductive layer that is transparent to visible light; the second protective layer overlaps the first region; the second protective layer does not overlap the second region; the semi-transparent layer is located on the conductive layer that transmits visible light and on the second protective layer; the semi-transmitting layer has a higher reflectivity for visible light than the common electrode; the semi-transparent layer does not overlap the first region; the semi-transparent layer overlaps the second region; The conductive layer that transmits visible light has a region in contact with the common electrode, a region in contact with the first protective layer and the second protective layer, and a region in contact with the first protective layer and the semi-transparent layer.

2. a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, a conductive layer that transmits visible light, a second protective layer, and a semi-transparent layer; the light-emitting layer has a first region located on the first pixel electrode and a second region located on the second pixel electrode; the common electrode is located on the light-emitting layer; the first protective layer is located on the common electrode; the first protective layer has an opening at a position overlapping the first region, the first protective layer overlaps the second region; the conductive layer that transmits visible light is located on the common electrode and on the first protective layer; the second protective layer is located on the conductive layer that is transparent to visible light; the second protective layer overlaps the first region; the second protective layer has an opening at a position overlapping with the second region, the semi-transparent layer is located on the conductive layer that transmits visible light and on the second protective layer; the semi-transmitting layer has a higher reflectivity for visible light than the common electrode; the semi-transparent layer has an opening at a position overlapping with the first region, the semi-transparent layer overlaps the second region; The conductive layer that transmits visible light has a region in contact with the common electrode, a region in contact with the first protective layer and the second protective layer, and a region in contact with the first protective layer and the semi-transparent layer.

Images