Micro Light-Emitting Diode Substrate, Micro Light-Emitting Diode Display, and XR Glass

Abstract

Provided is a micro light emitting diode substrate that enables easy wiring with a drive circuit board. 【Solution means】A micro light emitting diode substrate (100) has a micro light emitting diode array in which a red light emitting AlGaInN-based micro light emitting diode (30), a green light emitting AlGaInN-based micro light emitting diode (40), and a blue light emitting AlGaInN-based micro light emitting diode (50) are arranged on an n-type GaN layer (11), and a transparent insulating film (21) thereon. A p-side electrode extraction electrode (22) connected to each of a plurality of p-side electrodes (19) provided per diode through a contact hole (21a) of the transparent insulating film and an n-side electrode extraction electrode connected to the n-side electrode through another contact hole are provided. P-side wirings (24 to 25) are provided along the plurality of p-side electrodes of each diode.

Description

Technical Field

[0001] This invention relates to a micro light emitting diode substrate, a micro light emitting diode display, and XR (Cross Reality) glasses.

Background Art

[0002] In a GaN-based light emitting diode (LED) fabricated by growing a GaN-based semiconductor on a sapphire substrate, there are a very large number of threading dislocations in the crystal. The threading dislocations include edge dislocations, screw dislocations, and mixed dislocations in which edge dislocations and screw dislocations are mixed. Current leakage (leakage) occurs in the LED chip due to the threading dislocations. In many cases, the leakage current is at a negligible level, but there is a very small (usually less than 1%) level of current leakage (leakage failure) that cannot be ignored depending on the type of dislocation and the concentration state of the dislocations. It is very difficult to make this leakage failure 0%.

[0003] In the manufacture of a normal micro light emitting diode display, a process of transferring an LED chip to a secondary substrate is used. Also, in order to electrically and firmly connect the LED chip and the secondary substrate, generally, molten solder is used. When manufacturing a display with an ultra-high pixel density of several thousand ppi using micro LEDs, since the size of one pixel is several μm□, the size of the LED chip is miniaturized to be smaller than that.

[0004] When using a micro LED chip as a light source for a display, chips with leakage failures must be removed. However, since the chip size is very small, it is very difficult to measure the current flowing through each chip one by one and select defective chips. Even if it can be measured, it takes an enormous amount of time to measure tens of millions of LED chips, and the process cost also becomes extremely large.

[0005] A mass transfer process has been proposed for manufacturing a micro light-emitting diode display, in which a large number of LED chips are transferred to a secondary substrate at once. However, when the chip size of the LED chips is on the order of sub-μm, very high-precision alignment is required. Also, when using solder to connect the LED chips to the wiring on the secondary substrate, the risk of defects due to solder overflow and the like increases.

[0006] It is possible to omit the full measurement of the LED chips, connect the wiring on the secondary substrate and the LED chips to each other, and then apply a current to the wiring to identify defective chips. However, depending on the number of pixels in the panel, the number of LED chips ranges from several million to tens of millions, and the number of leakage defect locations reaches tens of thousands to hundreds of thousands. Replacing these defective LED chips is very difficult because both the pixels and the LED chips are fine. Even if the replacement of the LED chips themselves is possible, a huge amount of time is required for the replacement work (repair work) of all the defective locations.

[0007] Even for a normal micro light-emitting diode display (pixel size several hundred μm□: several tens to one hundred and several tens ppi), the current manufacturing yield is low, the manufacturing difficulty and cost are high, and as a result, it is very expensive and has not yet become widespread as a consumer product. In order to reduce the manufacturing cost of a micro light-emitting diode display with an ultra-high pixel density (pixel size several μm□: several thousand ppi), it is necessary to solve the above problems.

[0008] If a see-through ultra-high pixel density micro light-emitting diode display can be manufactured at low cost, it can be used as an optical engine or a display for XR glasses, and an XR glass can be realized that has sufficient brightness and enables clear image recognition even in bright daylight.

[0009] Under the above background, the inventor of the present invention proposed a micro light-emitting diode chip capable of emitting RGB light with a single chip and obtaining high luminous efficiency even when miniaturized, a micro light-emitting diode display using this micro light-emitting diode chip, and an XR glass using this micro light-emitting diode display (see Patent Document 1). The micro light-emitting diode chip of Patent Document 1 has at least one blue light-emitting AlGaInN-based light-emitting diode structure, at least one green light-emitting AlGaInN-based light-emitting diode structure, and at least one red light-emitting AlGaInN-based light-emitting diode structure on an n-type GaN layer. The blue light-emitting AlGaInN-based light-emitting diode structure, the green light-emitting AlGaInN-based light-emitting diode structure, and the red light-emitting AlGaInN-based light-emitting diode structure each include an insulating film having at least one opening provided on the n-type GaN layer, a frustum-shaped GaN layer provided on the n-type GaN layer at the opening portion of the insulating film, a light-emitting layer provided along the upper surface and side surface of the frustum-shaped GaN layer, a p-type GaN layer provided so as to cover the light-emitting layer, one or a plurality of p-side electrodes provided on the upper surface of the p-type GaN layer and separated from each other, and at least one n-side electrode provided on the n-type GaN layer at a portion where the frustum-shaped GaN layer is not provided. When the number of each of the blue light-emitting AlGaInN-based light-emitting diode structure, the green light-emitting AlGaInN-based light-emitting diode structure, and the red light-emitting AlGaInN-based light-emitting diode structure included in the entire micro light-emitting diode chip is N b , N g and N r , and when the number of the p-side electrodes provided on the upper surface of the p-type GaN layer of each of the blue light-emitting AlGaInN-based light-emitting diode structure, the green light-emitting AlGaInN-based light-emitting diode structure, and the red light-emitting AlGaInN-based light-emitting diode structure is N p , when it is set as N p ×N b ≧2, N p ×N g ≧2, N p ×N r ≧2.

Prior Art Documents

Patent Documents

[0010]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Non-Patent Documents

[0011]

Non-Patent Document 1

Non-Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0012] However, in the micro light-emitting diode display using the micro light-emitting diode chip described in Patent Document 1 and the XR glasses using this micro light-emitting diode display, when wiring between the substrate on which a large number of micro light-emitting diode chips are mounted in a two-dimensional array and the drive circuit board, it is necessary to connect the minute p-side electrode and n-side electrode of the micro light-emitting diode chip to the wiring on the drive circuit board, which is complicated, and thus there is room for improvement in this regard.

[0013] Therefore, the problems to be solved by this invention are to provide a micro light-emitting diode substrate that can easily perform wiring between a micro light-emitting diode substrate on which micro light-emitting diodes are arranged and an external circuit, for example, a drive circuit substrate, a high-performance micro light-emitting diode display using this micro light-emitting diode substrate, and a high-performance XR glass using this micro light-emitting diode display.

Means for Solving the Problems

[0014] In order to solve the above problems, this invention has a micro light-emitting diode array in which at least one red light-emitting AlGaInN-based micro light-emitting diode, at least one green light-emitting AlGaInN-based micro light-emitting diode, and at least one blue light-emitting AlGaInN-based micro light-emitting diode are arranged on an n-type GaN layer, and has a transparent insulating film provided so as to cover the micro light-emitting diode array, the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening portion of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided, p-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the transparent insulating film are provided on the transparent insulating film, a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the respective plurality of p-side electrodes of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode, Between the first p-side wiring and the respective p-side electrode extraction electrodes of the red light-emitting AlGaInN-based micro light-emitting diodes, between the second p-side wiring and the respective p-side electrode extraction electrodes of the green light-emitting AlGaInN-based micro light-emitting diodes, and between the third p-side wiring and the respective p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based micro light-emitting diodes, they are electrically connected to each other via thin-film fuses, A micro light-emitting diode substrate in which an n-side electrode extraction electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film.

[0015] The red light-emitting AlGaInN-based micro light-emitting diodes, green light-emitting AlGaInN-based micro light-emitting diodes, and blue light-emitting AlGaInN-based micro light-emitting diodes typically have an InGaN-based light-emitting layer. However, by controlling the growth conditions of the light-emitting layer, any of blue light emission (for example, wavelength 440 nm to 470 nm), green light emission (for example, wavelength 515 nm to 545 nm), and red light emission (for example, wavelength 605 nm to 655 nm) is possible.

[0016] The structures of the red light-emitting AlGaInN-based micro light-emitting diodes, green light-emitting AlGaInN-based micro light-emitting diodes, and blue light-emitting AlGaInN-based micro light-emitting diodes are not particularly limited as long as the light-emitting layer has a structure sandwiched between an n-type GaN layer and a p-type GaN layer, and are selected as needed.

[0017] The transparent insulating film may be any as long as it is transparent to visible light and is selected as needed. From the viewpoint of ease of formation, for example, polydimethylsiloxane (PDMS), which is a kind of silicone, is used.

[0018] The shape of the opening of the insulating film provided on the n-type GaN layer is selected as required, and may be a polygon similar or similar to the frustum of a polyhedron-shaped GaN layer, or a shape other than a polygon, such as a circle. Also, the arrangement of the openings of the insulating film is selected as required. The insulating film is selected as required, but for example, an oxide film (SiO 2 film, etc.), a nitride film (Si 3 N 4 film, etc.), an oxynitride film (SiON film, etc.), a titanium oxide film (TiO 2 film, etc.) and the like are used.

[0019] In a typical example, a red light-emitting AlGaInN-based micro light-emitting diode, a green light-emitting AlGaInN-based micro light-emitting diode, and a blue light-emitting AlGaInN-based micro light-emitting diode include an insulating film having at least one opening provided on an n-type GaN layer, a frustum-shaped GaN layer provided on the n-type GaN layer at the opening portion of the insulating film, a light-emitting layer provided along the upper surface and side surfaces of the frustum-shaped GaN layer, a p-type GaN layer provided to cover the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and at least one n-side electrode provided on the n-type GaN layer in a portion where the frustum-shaped GaN layer is not provided. Preferably, a part of the n-type GaN layer is formed by lateral growth, and the opening of the insulating film is formed on the n-type GaN layer in the portion formed by the lateral growth. By doing so, a significant reduction in the threading dislocation density of the frustum-shaped GaN layer provided on the n-type GaN layer at the opening portion of the insulating film can be achieved, thereby suppressing a decrease in luminous efficiency due to non-radiative recombination in the threading dislocation portion propagating from the frustum-shaped GaN layer to the light-emitting layer and a leakage current due to threading dislocations. The shape of the frustum-shaped GaN layer may be various shapes and is not particularly limited. The frustum-shaped GaN layer is, for example, a hexagonal frustum shape, a hexagonal frustum shape stretched in one direction, an octagonal frustum shape, or the like. This GaN layer may be undoped or n-type. For example, the thickness of the p-type GaN layer above the upper surface of the frustum-shaped GaN layer may be selected to be smaller than the thickness of the p-type GaN layer above the side surface of the frustum-shaped GaN layer (the thickness measured along the direction perpendicular to the upper surface of the frustum-shaped GaN layer) so that light is mainly emitted from the light-emitting layer on the upper surface of the frustum-shaped GaN layer. Conversely, the thickness of the p-type GaN layer above the side surface of the frustum-shaped GaN layer may be selected to be smaller than the thickness of the p-type GaN layer above the upper surface of the frustum-shaped GaN layer so that light is mainly emitted from the light-emitting layer on the side surface of the frustum-shaped GaN layer. When the p-side electrode is used to extract light from the light-emitting layer through this p-side electrode, at least a part thereof is configured to be transparent, and light from the light-emitting layer is extracted to the outside through this transparent portion.On the other hand, when light from the light-emitting layer is mainly extracted to the outside from the n side, the p-side electrode is made of a material containing a metal layer with a high reflectivity such as Ag.

[0020] As the red light-emitting AlGaInN-based micro light-emitting diode, green light-emitting AlGaInN-based micro light-emitting diode, and blue light-emitting AlGaInN-based micro light-emitting diode, RGB three-color micro LEDs formed on the same substrate by growing GaN-based nanorods (see, for example, Patent Documents 2 and 3), or RGB three-color micro LEDs fabricated by processing after laminating GaN-based semiconductor layers including RGB three-color light-emitting layers (see, for example, Non-Patent Document 1) may be used. For the red light-emitting AlGaInN-based micro light-emitting diode, a highly efficient one has been obtained by using an InGaN-based light-emitting layer grown on a flat C-plane GaN (see, for example, Non-Patent Document 2).

[0021] The n-type GaN layer is typically provided on a sapphire substrate. In the micro light-emitting diode substrate, typically, a pad portion wider than the wiring portion is provided at one end of each of the first p-side wiring, the second p-side wiring, and the third p-side wiring. By using these pad portions, electrical connection of external wiring to each of the first p-side wiring, the second p-side wiring, and the third p-side wiring can be facilitated.

[0022] Between the first p-side wiring and the extraction electrodes for the respective p-side electrodes of the red light-emitting AlGaInN-based micro light-emitting diodes, between the second p-side wiring and the extraction electrodes for the respective p-side electrodes of the green light-emitting AlGaInN-based micro light-emitting diodes, and between the third p-side wiring and the extraction electrodes for the respective p-side electrodes of the blue light-emitting AlGaInN-based micro light-emitting diodes, the thin-film fuses that electrically connect them are selected in terms of material, width, thickness, shape, etc. so that they can be melted and cut by applying a repair voltage between them and passing a predetermined current. If too much current is required to cut the thin-film fuse, there is a possibility of thermal damage to the surrounding circuit due to the influence of the Joule heat generated there. Considering the thermal influence on the periphery of the circuit, it is desirable that the thin-film fuse be cut by a current of about several hundred μA to several mA. As a condition for that, the minimum value of the cross-sectional area (width × thickness) of the thin-film fuse is 0.5 μm 2 The following are desirable, but not limited thereto. The thin-film fuse is typically composed of a metal having a melting point of 350°C or lower and typically a melting point of 150°C or higher. Such metals include In, Sn, etc. as single metals, and InSn, InSnAg, AgSn, AgSn, etc. as alloys (eutectic alloys), but are not limited thereto.

[0023] Also, this invention a micro light-emitting diode substrate, a drive circuit substrate on which a plurality of drive circuits that can be independently controlled and driven are provided in a two-dimensional array, and having, the above micro light-emitting diode substrate has a micro light-emitting diode array in which at least one red light-emitting AlGaInN-based micro light-emitting diode, at least one green light-emitting AlGaInN-based micro light-emitting diode, and at least one blue light-emitting AlGaInN-based micro light-emitting diode are arranged per pixel on an n-type GaN layer, and a transparent insulating film provided so as to cover the above micro light-emitting diode array, The above red light-emitting AlGaInN-based micro light-emitting diode, the above green light-emitting AlGaInN-based micro light-emitting diode, and the above blue light-emitting AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the above n-type GaN layer, a light-emitting layer provided on the above n-type GaN layer at the portion of the opening of the above insulating film, a p-type GaN layer provided on the above light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the above p-type GaN layer, and an n-side electrode provided on the above n-type GaN layer at a portion where the above light-emitting layer is not provided. P-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the above transparent insulating film are provided on the above transparent insulating film. A first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the above transparent insulating film along the respective plurality of p-side electrodes of the above red light-emitting AlGaInN-based micro light-emitting diode, the above green light-emitting AlGaInN-based micro light-emitting diode, and the above blue light-emitting AlGaInN-based micro light-emitting diode. Between the above first p-side wiring and the respective p-side electrode extraction electrodes of the above red light-emitting AlGaInN-based micro light-emitting diode, between the above second p-side wiring and the respective p-side electrode extraction electrodes of the above green light-emitting AlGaInN-based micro light-emitting diode, and between the above third p-side wiring and the respective p-side electrode extraction electrodes of the above blue light-emitting AlGaInN-based micro light-emitting diode, they are electrically connected to each other through thin film fuses. N-side electrode extraction electrodes electrically connected to the respective n-side electrodes through contact holes provided in the above transparent insulating film are provided on the above transparent insulating film. The above drive circuit board The first drive circuit, the second drive circuit, and the third drive circuit for driving the above red light-emitting AlGaInN-based micro light-emitting diode, the above green light-emitting AlGaInN-based micro light-emitting diode, and the above blue light-emitting AlGaInN-based micro light-emitting diode that constitute one pixel of the above micro light-emitting diode substrate. The first extraction electrode connected to the terminal of the first driving circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN-based micro light-emitting diode, the second extraction electrode connected to the terminal of the second driving circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN-based micro light-emitting diode, and the third extraction electrode connected to the terminal of the third driving circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN-based micro light-emitting diode, Wiring for setting the potentials of the n-side electrodes of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode, A fourth extraction electrode electrically connected to the wiring, having, A micro light-emitting diode display in which the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively.

[0024] In this micro light-emitting diode display, the micro light-emitting diode substrate and the driving circuit substrate may be overlapped with each other, or the micro light-emitting diode substrate and the driving circuit substrate may be connected to each other via a flexible printed circuit or the like. In a typical example, the micro light-emitting diode substrate and the driving circuit substrate are overlapped such that a first extraction electrode, a second extraction electrode, a third extraction electrode, and a fourth extraction electrode face a first p-side wiring, a second p-side wiring, a third p-side wiring, and an extraction electrode for an n-side electrode, respectively, and the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively. The electrical connection between the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode and the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode can be performed using, for example, solder. The driving circuit substrate, in a typical example, has a substrate, a driving circuit portion provided on the substrate, and an insulating film provided on the driving circuit portion, and the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are provided in a first contact hole, a second contact hole, a third contact hole, and a fourth contact hole provided in the insulating film, respectively. In this structure, even if the number of p electrodes on the micro light-emitting diode substrate increases due to the division of the p-side electrode of each micro light-emitting diode, the connection with the driving circuit substrate can be achieved with a minimum number of wirings or contacts, and the risk of occurrence of defects during connection is reduced.

[0025] Since this micro light-emitting diode display can emit light in three colors: red (R), green (G), and blue (B), it can be used as a color display. This micro light-emitting diode display may be any of a passive matrix driving method, an active matrix driving method, a pulse width modulation (PWM) driving method, and the like. In a color display using the PWM driving method, for example, a driving circuit substrate having a PWM driving circuit may be used.

[0026] In the invention of this micro light-emitting diode display, unless otherwise specified and as long as it does not conflict with its nature, the matters described in relation to the invention of the above-described micro light-emitting diode substrate are applicable.

[0027] In addition, this invention has a display, wherein the display has a display unit using a micro light-emitting diode substrate, a drive circuit substrate on which a plurality of drive circuits capable of independent control and driving are provided in a two-dimensional array, and a flexible printed circuit for wiring the display unit and the drive circuit substrate, wherein the micro light-emitting diode substrate has a micro light-emitting diode array in which at least one red light-emitting AlGaInN-based micro light-emitting diode, at least one green light-emitting AlGaInN-based micro light-emitting diode, and at least one blue light-emitting AlGaInN-based micro light-emitting diode are arranged on an n-type GaN layer, and a transparent insulating film provided so as to cover the micro light-emitting diode array, wherein the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening portion of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided, p-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the transparent insulating film are provided on the transparent insulating film, A first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode, respectively. Between the first p-side wiring and each of the p-side electrode extraction electrodes of the red light-emitting AlGaInN-based micro light-emitting diode, between the second p-side wiring and each of the p-side electrode extraction electrodes of the green light-emitting AlGaInN-based micro light-emitting diode, and between the third p-side wiring and each of the p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based micro light-emitting diode are electrically connected to each other via thin film fuses. An n-side electrode extraction electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film. The drive circuit board A first drive circuit, a second drive circuit, and a third drive circuit for driving the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode that constitute one pixel of the micro light-emitting diode substrate, respectively. A first extraction electrode connected to a terminal electrically connected to the first p-side wiring of the red light-emitting AlGaInN-based micro light-emitting diode of the first drive circuit, a second extraction electrode connected to a terminal electrically connected to the second p-side wiring of the green light-emitting AlGaInN-based micro light-emitting diode of the second drive circuit, and a third extraction electrode connected to a terminal electrically connected to the third p-side wiring of the blue light-emitting AlGaInN-based micro light-emitting diode of the third drive circuit. A wiring for setting the potential of the n-side electrodes of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode, and the blue light-emitting AlGaInN-based micro light-emitting diode. A fourth extraction electrode electrically connected to the wiring. having an XR glass in which the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively.

[0028] In this XR glass, the locations for mounting the display unit, the drive circuit board, and the flexible printed circuit are selected as needed and are not particularly limited. For example, the display unit is mounted on the inner surface of the windshield portion, the drive circuit board is mounted on the ear-hanging portion of the frame, and the flexible printed circuit is mounted on the frame. XR (Cross Reality) glass is a general term for glasses using technologies such as VR (Virtual Reality), AR (Augmented Reality), MR (Mixed Reality), SR (Substitutional Reality), technologies combining these (for example, a technology that fuses VR and AR), intermediate technologies between these technologies (for example, a technology positioned between AR and MR), etc., and is a video display device that creates a space for providing a pseudo-experience by fusing the real and virtual worlds. VR is a technology that can experience the virtual world as if it were the real world, AR is a technology that projects and shows the virtual world overlaid on the real space, MR is a technology that shows by fusing the real space and the virtual space, and SR is a technology that shows past videos overlaid on the real space so that past events seem as if they are happening right in front of one's eyes.

[0029] In the invention of this XR glass, for matters other than the above, as long as they do not particularly conflict with its nature, the matters described in relation to the invention of the above micro light-emitting diode substrate and the invention of the micro light-emitting diode display hold true.

[0030] Also, this invention On an n-type GaN layer, there is at least a first AlGaInN-based micro light-emitting diode, a second AlGaInN-based micro light-emitting diode, and a third AlGaInN-based micro light-emitting diode with emission wavelengths of 390 nm or more and 470 nm or less per pixel arranged in a micro light-emitting diode array, and a transparent insulating film provided to cover the micro light-emitting diode array, The first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening portion of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided. On the transparent insulating film, there are provided p-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the transparent insulating film. On the transparent insulating film, a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided along the plurality of p-side electrodes of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively. Between the first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based micro light-emitting diode, between the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based micro light-emitting diode, and between the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based micro light-emitting diode, they are electrically connected to each other through thin film fuses, respectively. It is a micro light-emitting diode substrate on which an n-side electrode extraction electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film.

[0031] The first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode typically have an InGaN-based light-emitting layer. The structures of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode are not particularly limited as long as the light-emitting layer is sandwiched between an n-type GaN layer and a p-type GaN layer, and are selected as needed.

[0032] When this micro light-emitting diode substrate is used for a color micro light-emitting diode display, a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode respectively, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode respectively is provided on the back surface of the n-type GaN layer.

[0033] In the invention of this micro light-emitting diode substrate, unless otherwise specified and not contrary to its nature, the matters described in connection with the invention of the above micro light-emitting diode substrate hold true.

[0034] Further, this invention includes a micro light-emitting diode substrate, a drive circuit substrate on which a plurality of drive circuits that can be independently controlled and driven are provided in a two-dimensional array, and the above micro light-emitting diode substrate has, on an n-type GaN layer, a micro light-emitting diode array in which at least the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode with emission wavelengths of 390 nm or more and 470 nm or less are arranged per pixel, a transparent insulating film provided to cover the micro light-emitting diode array; the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening portion of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided; p-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the transparent insulating film are provided on the transparent insulating film; a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the respective plurality of p-side electrodes of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode; between the first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based micro light-emitting diode, between the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based micro light-emitting diode, and between the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based micro light-emitting diode are electrically connected to each other through thin-film fuses; an n-side electrode extraction electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; the drive circuit board; a first drive circuit, a second drive circuit, and a third drive circuit for driving the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively, which constitute one pixel of the micro light-emitting diode board; a first extraction electrode connected to a terminal of the first driving circuit that is electrically connected to the first p-side wiring of the first AlGaInN-based micro light-emitting diode, a second extraction electrode connected to a terminal of the second driving circuit that is electrically connected to the second p-side wiring of the second AlGaInN-based micro light-emitting diode, and a third extraction electrode connected to a terminal of the third driving circuit that is electrically connected to the third p-side wiring of the third AlGaInN-based micro light-emitting diode, wiring for setting the potentials of the n-side electrodes of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, a fourth extraction electrode electrically connected to the wiring, and having the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively, a micro light-emitting diode display in which a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode is provided on the back surface of the n-type GaN layer.

[0035] In this micro light-emitting diode display, as the wavelength conversion layer, typically, a red phosphor, a green phosphor, and a blue phosphor provided corresponding to each of a first AlGaInN-based micro light-emitting diode, a second AlGaInN-based micro light-emitting diode, and a third AlGaInN-based micro light-emitting diode on the back surface of the n-type GaN layer, respectively, and filters that transmit red light, green light, and blue light provided on these red phosphor, green phosphor, and blue phosphor are provided, or a red phosphor and a green phosphor provided corresponding to any two of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively, and filters that transmit red light and green light provided on these red phosphor and green phosphor are provided.

[0036] In the invention of this micro light-emitting diode display, regarding matters other than the above, as long as it is not particularly contrary to its nature, the matters described in relation to the invention of the above micro light-emitting diode substrate and the invention of the micro light-emitting diode display are established.

[0037] Also, this invention has a display, wherein the display has a display unit using a micro light-emitting diode substrate, a drive circuit substrate on which a plurality of drive circuits capable of being independently controlled and driven are provided in a two-dimensional array, and a flexible printed circuit for wiring the display unit and the drive circuit substrate, wherein the micro light-emitting diode substrate has, on an n-type GaN layer, a micro light-emitting diode array in which at least a first AlGaInN-based micro light-emitting diode, a second AlGaInN-based micro light-emitting diode, and a third AlGaInN-based micro light-emitting diode having emission wavelengths of 390 nm or more and 470 nm or less are arranged per pixel, and a transparent insulating film provided so as to cover the micro light-emitting diode array. The first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening portion of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided. P-side electrode extraction electrodes electrically connected to the respective p-side electrodes through contact holes provided in the transparent insulating film are provided on the transparent insulating film. A first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively. Between the first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based micro light-emitting diode, between the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based micro light-emitting diode, and between the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based micro light-emitting diode are electrically connected to each other through thin film fuses, respectively. An n-side electrode extraction electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film. The drive circuit board The first drive circuit, the second drive circuit, and the third drive circuit for driving the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, which constitute one pixel of the micro light-emitting diode board, A first extraction electrode connected to a terminal of the first driving circuit that is electrically connected to the first p-side wiring of the first AlGaInN-based micro light-emitting diode, a second extraction electrode connected to a terminal of the second driving circuit that is electrically connected to the second p-side wiring of the second AlGaInN-based micro light-emitting diode, and a third extraction electrode connected to a terminal of the third driving circuit that is electrically connected to the third p-side wiring of the third AlGaInN-based micro light-emitting diode, wiring for setting the potentials of the n-side electrodes of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, a fourth extraction electrode electrically connected to the wiring, and having the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively, an XR glass provided with a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively, on the back surface of the n-type GaN layer, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based micro light-emitting diode, the second AlGaInN-based micro light-emitting diode, and the third AlGaInN-based micro light-emitting diode, respectively.

[0038] In the invention of this XR glass, unless it is particularly contrary to its properties, the matters described in connection with the invention of the above-mentioned micro light-emitting diode substrate, the invention of the micro light-emitting diode display, and the invention of the XR glass hold true.

Advantages of the Invention

[0039] According to the present invention, on a transparent insulating film provided to cover a red light-emitting AlGaInN-based micro light-emitting diode, a green light-emitting AlGaInN-based micro light-emitting diode, and a blue light-emitting AlGaInN-based micro light-emitting diode or a first AlGaInN-based micro light-emitting diode, a second AlGaInN-based micro light-emitting diode, and a third AlGaInN-based micro light-emitting diode, a first p-side wiring, a second p-side wiring, a third p-side wiring, and an extraction electrode for an n-side electrode are provided, so that wiring with an external circuit, for example, a drive circuit board can be easily performed using these.

[0040] Then, a high-performance micro LED display can be realized using this micro light-emitting diode substrate, and a high-performance XR glass can be realized using this micro LED display.

Brief Description of the Drawings

[0041]

Figure 1A

Figure 1B

Figure 2A

Figure 2B

Figure 3A

Figure 3B

Figure 4A

Figure 4B

Figure 5A

Figure 5B

Figure 6A

Figure 6B

Figure 7A

Figure 7B

Figure 8A

Figure 8B

Figure 9A

Figure 9B

Figure 10A

Figure 10B

Figure 11A

Figure 11B

Figure 12A

Figure 12B

Figure 13

Figure 14

Figure 15

Figure 16

Embodiments for Carrying Out the Invention

[0042] Hereinafter, embodiments for carrying out the invention (hereinafter referred to as "embodiments") will be described.

[0043] 〈First Embodiment〉 [Micro LED Substrate] Figures 1A and 1B show a micro-LED substrate 100 according to the first embodiment. Figure 1A is a cross-sectional view, Figure 1B is a plan view, and Figure 1A is a cross-sectional view taken along A-A of Figure 1B. Although pixels are arranged in a two-dimensional array on this micro-LED substrate 100, Figures 1A and 1B show a portion of one pixel. As shown in Figures 1A and 1B, in this micro-LED substrate 100, a stripe-shaped n-type GaN layer 11 extending in the pixel arrangement direction is provided on a sapphire substrate 10 in the C-plane orientation. Note that the sapphire substrate 10 may not be provided. On the n-type GaN layer 11, a red-emitting AlGaInN-based micro-LED 30, a green-emitting AlGaInN-based LED 40, and a blue-emitting AlGaInN-based LED 50 are provided adjacent to each other in this order. These red-emitting AlGaInN-based micro-LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50 have the same structure as each other except for the light-emitting layer. The n-type GaN layer 11 is generally grown on a sapphire substrate via a low-temperature buffer layer, but usually has a very large number of threading dislocations (10 8 ~10 10 per cm 2 or so). Threading dislocations can cause a decrease in luminous efficiency and electrical leakage. Therefore, preferably, it is laterally grown by a conventionally known ELO (Epitaxial Lateral Overgrowth) method and has a partially low threading dislocation density region (not shown). The region corresponding to the seed (seed crystal) when laterally growing the n-type GaN layer 11 and the region where the layers laterally grown from adjacent seeds meet (junction) are high dislocation density regions (10 8 ~10 10 per cm 2 or so), and the laterally grown region between both regions is a low dislocation density region (10 6 ~10 7 per cm 2 or so).

[0044] An insulating film 12 is provided on the n-type GaN layer 11. The insulating film 12 is SiO as already described 2It is a film or the like. The thickness of the insulating film 12 is selected as needed, for example, it is 10 to 30 nm. In the insulating film 12, three elongated rectangular openings 12a having the same planar shape are provided in parallel and at equal intervals on the low dislocation density region of the n-type GaN layer 11. The size of the opening 12a is selected as needed, for example, it is (100 to 2000 nm) × (1 to 10 μm). On the n-type GaN layer 11 in each opening 12a portion, island-shaped GaN layers 13 that are elongated in the longitudinal direction of the opening 12a are provided so as to extend separately from each other on the insulating film 12. In this case, this GaN layer 13 has a frustum of an octagonal pyramid shape extending in the longitudinal direction of the opening 12a. This GaN layer 13 may be undoped or n-type. In FIGS. 1A and 1B, a light-emitting layer 14 for red light emission is provided in an island shape along the upper surface and the side surface (inclined surface) of the GaN layer 13 in the portion of the leftmost opening 12a, a light-emitting layer 15 for green light emission is provided in an island shape along the upper surface and the side surface (inclined surface) of the GaN layer 13 in the portion of the central opening 12a, and a light-emitting layer 16 for blue light emission is provided in an island shape along the upper surface and the side surface (inclined surface) of the GaN layer 13 in the portion of the rightmost opening 12a. P-type GaN layers 17 are provided separately from each other so as to cover the light-emitting layers 14, 15, and 16 respectively. By appropriately selecting conditions such as the temperature, growth rate, and pressure during the crystal growth of the p-type GaN layer 17, the growth in the horizontal direction with respect to the vertical direction of the p-type GaN layer 17 is promoted, and a part or all of the p-type GaN layer 17 above the upper surface of the GaN layer 13 and above the side surface (inclined surface) of the GaN layer 13 is flattened. Therefore, the thickness of the p-type GaN layer 17 above the upper surface of the GaN layer 13 is smaller than the thickness of the p-type GaN layer 17 above the side surface (inclined surface) of the GaN layer 13. Note that a p-type AlGaN layer or the like is often inserted between the light-emitting layers 14, 15, 16 and the p-type GaN layer 17, but its illustration and description are omitted.

[0045] The light-emitting layers 14, 15, 16 are, for example, In x Ga 1-x N layers as barrier layers and In y Ga 1-y N layers as well layers are alternately laminated In x Ga 1-x N / Iny Ga 1-y has an N multiple quantum well (MQW) structure (x < y, 0 ≤ x < 1, 0 ≤ y < 1). The In that constitutes the light-emitting layer 14 x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of red light, and the In that constitutes the light-emitting layer 15 x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of green light, and the In that constitutes the light-emitting layer 16 x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of blue light. These In composition ratios x and y vary depending on the growth conditions of the In x Ga 1-x N layer and the In y Ga 1-y N layer. The In composition of the light-emitting layers 14, 15, and 16 formed in a frustum of an octagonal pyramid shape following the frustum of an octagonal pyramid-shaped GaN layer 13 is larger in the portion on the upper surface of the GaN layer 13 than in the portion on the side surface of the GaN layer 13. This is because, compared to the InGaN growth on the C plane, which is a polar plane, the InGaN growth on the non-polar plane and semi-polar plane has the property that the In composition is lower at the same temperature. Therefore, the bandgap of the portion on the side surface of the GaN layer 13 among the light-emitting layers 14, 15, and 16 is larger than the bandgap of the portion on the upper surface of the GaN layer 13.

[0046] An insulating film 18 is provided so as to cover each p-type GaN layer 17. A plurality (four in this example) of circular openings 18a are provided in a row and at equal intervals on the center line in the longitudinal direction of each p-type GaN layer 17 in the insulating film 18. The diameter of the opening 18a is selected as required, but is typically about the width (100 to 2000 nm) of the opening 12a. Through each opening 18a, a plurality (four in this example) of p-side electrodes 19 are provided in a row and separated from each other at positions corresponding to the respective light-emitting layers 14, 15, and 16 on the center line in the longitudinal direction on the p-type GaN layer 17. The p-side electrode 19 is configured to increase the light reflectance by the p-side electrode 19 when taking out light from the n-type GaN layer 11 side in each of the red light-emitting AlGaInN-based micro-LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, and is composed of, for example, a multilayer film such as an ITO / Ag / Ti / Au film. However, when taking out light to the side opposite to the n-type GaN layer 11 through this p-side electrode 19, it is composed of a transparent material such as an ITO film. In the ITO / Ag / Ti / Au film, the thicknesses of the ITO film, the Ag film, the Ti film, and the Au film are, for example, 50 nm, 100 nm, 20 nm, and 50 nm, respectively.

[0047] The red light-emitting AlGaInN-based micro-LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50 are provided closer to one side of the n-type GaN layer 11, and an insulating film 12 is not provided on the other side region of the n-type GaN layer 11 where a space is formed thereby, and the n-type GaN layer 11 is exposed. And an n-side electrode 20 is provided in parallel with the arrangement direction of the red light-emitting AlGaInN-based micro-LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50 on the exposed n-type GaN layer 11. The n-side electrode 20 is composed of, for example, a laminated film or a multilayer film such as an Al / Au film or a Ti / Al / Ti / Ni / Au film.

[0048] A transparent insulating film 21 is provided entirely so as to cover the red light-emitting AlGaInN-based micro-LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50. The transparent insulating film 21 is made of, for example, PDMS or the like. Contact holes 21a are provided in portions of the transparent insulating film 21 corresponding to the p-side electrodes 19 of the red light-emitting AlGaInN-based micro-LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, respectively, and p-side electrode extraction electrodes 22 are provided in a state of being in contact with the p-side electrodes 19 through the contact holes 21a. The p-side electrode extraction electrodes 22 are made of, for example, ITO, Al, Cu, or the like. On the other hand, contact holes 21b are provided in portions of the transparent insulating film 21 corresponding to any position of the n-side electrodes 20 in one pixel (for example, a position on one side of the green light-emitting AlGaInN-based LED 40), and n-side electrode extraction electrodes 23 are provided in a state of being in contact with the n-side electrodes 20 through the contact holes 21b.

[0049] A plurality of p-side wirings 24, 25, and 26 are provided on a transparent insulating film 21 along the respective plurality of p-side electrodes 19 of a red light-emitting AlGaInN-based micro-LED 30, a green light-emitting AlGaInN-based micro-LED 40, and a blue light-emitting AlGaInN-based micro-LED 50. Circular pad portions 24a, 25a, and 26a are provided at one end of these p-side wirings 24, 25, and 26. These pad portions 24a, 25a, and 26a are provided on the transparent insulating film 21 in a region deviated from the n-type GaN layer 11. The p-side wiring 24 and the extraction electrode 22 for each p-side electrode of the red light-emitting AlGaInN-based micro-LED 30 are connected to each other via a thin film fuse 27, the p-side wiring 25 and the extraction electrode 22 for each p-side electrode of the green light-emitting AlGaInN-based micro-LED 40 are connected to each other via a thin film fuse 27, and the p-side wiring 26 and the extraction electrode 22 for each p-side electrode of the blue light-emitting AlGaInN-based micro-LED 50 are connected to each other via a thin film fuse 27. When excessive current flows due to a leak defect or the like in the p-side electrode 19, the thin film fuse 27 can be blown to cut off the electrical connection between the p-side electrode 19 and the extraction electrode 22 for the p-side electrode. Although the pad portions 24a, 25a, and 26a of the p-side wirings 24, 25, and 26 are provided on the transparent insulating film 21, in FIG. 1A, for the sake of convenience, they are shown as being on the thin film fuse 27.

[0050] The n-type GaN layer 11, the light-emitting layers 14, 15, 16, and the p-type GaN layer 17 typically have a C-plane orientation. The resistivity of the n-type GaN layer 11 and the GaN layer 13 is, for example, about 0.01 Ωcm, but is not limited thereto. The resistivity of the light-emitting layers 14, 15, 16 is, for example, about 0.1 to 0.3 Ωcm, but is not limited thereto. The resistivity of the p-type GaN layer 17 is, for example, about 1 to 3 Ωcm, but is not limited thereto. The thickness of the n-type GaN layer 11 is, for example, 1 to 5 μm, the thickness of the GaN layer 13 is, for example, 100 to 1500 nm, the thickness of the light-emitting layers 14, 15, 16 is, for example, 30 to 100 nm, and the thickness of the portion of the p-type GaN layer 17 above the upper surface of the GaN layer 13 is, for example, 100 to 200 nm, but is not limited thereto. The total thickness of the n-type GaN layer 11, the GaN layer 13, the light-emitting layers 14, 15, 16, and the p-type GaN layer 17 is, for example, 1.2 to 6.8 μm, but is not limited thereto.

[0051] [Operation of Micro-LED Substrate] In this micro-LED substrate 100, by applying a forward bias between the p-side electrode 19 and the n-side electrode 20 in the red-emitting AlGaInN-based LED 30, red emission can be generated. By applying a forward bias between the p-side electrode 19 and the n-side electrode 20 in the green-emitting AlGaInN-based LED 40, green emission can be generated. By applying a forward bias between the p-side electrode 19 and the n-side electrode 20 in the blue-emitting AlGaInN-based LED 50, blue emission can be generated, thereby obtaining full-color emission. In this case, since the n-type GaN layer 11 and the p-type GaN layer 17 are separated by the insulating film 12 except at the opening 12a, the generation of leakage current during operation can be effectively suppressed. Also, since the thickness of the p-type GaN layer 17 with a high resistivity is smaller in the portion above the upper surface of the GaN layer 13 than in the portion above the side surface (inclined surface) of the GaN layer 13, the current flowing between the p-side electrode 19 and the n-side electrode 20 mainly passes through the p-type GaN layer 17 in the portion above the upper surface of the GaN layer 13 with a lower resistance, and the current passing through the p-type GaN layer 17 in the portion above the side surface of the GaN layer 13 is small. Further, the In composition ratios x and y of the MQW structures of the light-emitting layers 14, 15, and 16 are smaller in the portion above the side surface of the GaN layer 13 than in the portion above the upper surface of the GaN layer 13 among the light-emitting layers 14, 15, and 16. Therefore, the bandgap of the light-emitting layers 14, 15, and 16 is smaller in the portion above the upper surface of the GaN layer 13 than in the portion above the side surface of the GaN layer 13, but carriers (electrons, holes) tend to gather in the light-emitting layers 14, 15, and 16 in the portion above the upper surface of the GaN layer 13 with a smaller bandgap. Then, when a current flows between the p-side electrode 19 and the n-side electrode 20 in this way, light emission occurs in the light-emitting layers 14, 15, and 16, and light is mainly emitted from the light-emitting layers 14, 15, and 16 in the portion above the upper surface of the GaN layer 13, and this light is taken out to the outside through the p-side electrode 19 or the n-type GaN layer 11.

[0052] [Method for manufacturing a micro-LED substrate] An example of a method for manufacturing the micro-LED substrate 100 will be described. The formation methods of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50 are the same as the method for manufacturing a micro-LED chip described in Patent Document 1.

[0053] First, as shown in FIGS. 2A and 2B, in the same manner as in Patent Document 1, a red light-emitting AlGaInN-based LED 30 including a light-emitting layer 14, a green light-emitting AlGaInN-based LED 40 including a light-emitting layer 15, and a blue light-emitting AlGaInN-based LED 50 including a light-emitting layer 16 are formed. The main points of this formation method are as follows. That is, an n-type GaN layer 11 is grown on a sapphire substrate 30 having a C-plane orientation, and after an insulating film 12 such as an SiO 2 film is formed on the n-type GaN layer 11, the insulating film 12 is patterned to form an elongated rectangular opening 12a in a portion where the blue light-emitting AlGaInN-based LED 50 is to be formed. Next, after growing a GaN layer 13 in an octagonal frustum island shape in each portion of the opening 12a, In x Ga 1-x N / In y Ga 1-y N MQW structure having a light-emitting layer 16 is epitaxially grown. The growth of these GaN layer 13, light-emitting layer 16, and p-type GaN layer 17 is continuously performed in an MOCVD furnace. Next, after forming an insulating film (not shown) such as an SiO 2 film so as to cover the p-type GaN layer 17, the insulating film 12 is patterned to form an elongated rectangular opening 12a in a portion where the green light-emitting AlGaInN-based LED 40 is to be formed. Next, on the n-type GaN layer 11 exposed in the portion of the newly formed opening 12a, a GaN layer 13, In x Ga 1-x N / In y Ga 1-y N MQW structure having a light-emitting layer 15 and a p-type GaN layer 17 are sequentially grown. Next, an SiO 2After forming an insulating film (not shown) such as a film, the insulating film 12 is patterned to form an elongated rectangular opening 12a in the portion where the red light-emitting AlGaInN-based LED 30 is to be formed. Next, on the n-type GaN layer 11 exposed in the portion of the newly formed opening 12a, a GaN layer 13, In x Ga 1-x N / In y Ga 1-y A light-emitting layer 14 having an N MQW structure and a p-type GaN layer 17 are sequentially grown. Subsequently, an insulating film (not shown) such as an SiO 2 film is formed so as to cover the p-type GaN layer 17. Next, circular contact holes 18a are formed in the insulating film 18 in the portions above the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, respectively, and the p-type GaN layer 17 is exposed inside the contact holes 18a. Next, a p-side electrode 19 that contacts the p-type GaN layer 17 through the contact holes 18a is formed.

[0054] Next, as shown in FIGS. 3A and 3B, after patterning the insulating film 12 in a stripe shape leaving the portions of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, among the n-type GaN layer 11 thus exposed, the n-type GaN layer 11 is etched and removed leaving the portion of a stripe-shaped region along one side edge of the insulating film 12 along the arrangement direction of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, to expose the sapphire substrate 10. The patterning of the insulating film 12 is performed, for example, by wet etching. The etching of the n-type GaN layer 11 is performed, for example, by a reactive ion etching (RIE) method.

[0055] Next, as shown in FIGS. 4A and 4B, an n-side electrode 20 is formed on the stripe-shaped n-type GaN layer 11 exposed along one side edge of the insulating film 12, for example, by a vacuum evaporation method or the like.

[0056] Next, as shown in FIGS. 5A and 5B, a transparent insulating film 21 is formed over the entire surface so as to cover the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, the blue light-emitting AlGaInN-based LED 50, and the like.

[0057] Next, as shown in FIGS. 6A and 6B, contact holes 21a and 21b are formed by etching and removing the portions on the p-side electrodes 19 and the portions on the n-side electrodes 20 of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50, respectively.

[0058] Next, as shown in FIGS. 7A and 7B, a p-side extraction electrode 22 for the p-side electrode is formed in the contact hole 21a formed in the portion on the p-side electrode 19 of each of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50.

[0059] Next, as shown in FIGS. 8A and 8B, p-side wirings 24, 25, and 26 are formed on the transparent insulating film 21, and an n-side extraction electrode 23 for the n-side electrode is formed in the contact hole 21b.

[0060] Next, as shown in FIGS. 9A and 9B, a thin-film fuse 27 is formed so as to connect between the p-side wiring 24 and each p-side extraction electrode 22 of the red light-emitting AlGaInN-based micro-LED 30, between the p-side wiring 25 and each p-side extraction electrode 22 of the green light-emitting AlGaInN-based micro-LED 40, and between the p-side wiring 26 and each p-side extraction electrode 22 of the blue light-emitting AlGaInN-based micro-LED 50.

[0061] Thus, the target micro-LED substrate 100 shown in FIGS. 1A and 1B is manufactured.

[0062] As described above, according to this first embodiment, on the transparent insulating film 21 provided so as to cover the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50 of the micro-LED substrate 100, the p-side wirings 24, 25, 26 having the pad portions 24a, 25a, 26a and the extraction electrode 23 for the n-side electrode are provided. Thus, wiring between the micro-LED substrate 100 and an external circuit, for example, a drive circuit board, can be easily performed using these pad portions 24a, 25a, 26a and the extraction electrode 23 for the n-side electrode. Further, the current flowing between the p-side electrode 19 and the n-side electrode 20 concentrates and flows in the portions of the light-emitting layers 14, 15, 16 on the upper surface of the GaN layer 13 due to the shape of the p-type GaN layer 17. Therefore, the electron-hole recombination probability in the portions of the light-emitting layers 14, 15, 16 on the upper surface of the GaN layer 13 can be maintained high, and thereby high luminous efficiency can be obtained. Further, this micro-LED substrate 100 can be easily manufactured at low cost using a conventionally known technique. And, a high-performance micro-LED display can be realized using this high-performance micro-light-emitting LED substrate 100, and a high-performance XR glass can be realized using this micro-LED display. Further, in this micro-LED substrate 100, each of the p-side wirings 24 and the extraction electrodes 22 for the p-side electrodes of the red light-emitting AlGaInN-based micro-LED 30 are connected to each other via the thin-film fuse 27, each of the p-side wirings 25 and the extraction electrodes 22 for the p-side electrodes of the green light-emitting AlGaInN-based micro-LED 40 are connected to each other via the thin-film fuse 27, and each of the p-side wirings 26 and the extraction electrodes 22 for the p-side electrodes of the blue light-emitting AlGaInN-based micro-LED 50 are connected to each other via the thin-film fuse 27. Therefore, when a defect such as a leak occurs in a portion of any of the p-side electrodes 19, etc., by applying a repair voltage between the p-side wirings 24, 25, 26 and the extraction electrodes 22 for the p-side electrodes and flowing a current, the thin-film fuse 27 connected thereto is blown, thereby interrupting the electrical connection between the p-side electrode 19 and the p-side wirings 24, 25, 26.Therefore, the repair of the micro-LED substrate 100 can be easily performed, and as a result, the high yield of the micro-LED substrate 100 can be achieved. The micro-LED substrate 100 is generally through-hole.

[0063] <Second Embodiment> [Micro-LED Display] The micro-LED display according to the second embodiment is configured by overlapping the micro-LED substrate 100 according to the first embodiment and the drive circuit substrate.

[0064] FIGS. 10A and 10B show the drive circuit substrate 200 and illustrate the drive circuit portion of one pixel. In the drive circuit substrate 200, the drive circuit portions 220 are arranged in a two-dimensional matrix as a whole. As shown in FIGS. 10A and 10B, in the drive circuit substrate 200, the drive circuit portions 220 are provided on a glass substrate 210 that is transparent to visible light, and an insulating film 230 is provided so as to cover the drive circuit portions 220. By using the glass substrate 210, the drive circuit substrate 200 is through-hole. The drive circuit portion 220 is provided with a drive circuit 221 for the red light-emitting AlGaInN-based LED 30, a drive circuit 222 for the green light-emitting AlGaInN-based LED 40, and a drive circuit 223 for the blue light-emitting AlGaInN-based LED 50. The drive circuits 221, 222, and 223 are typically composed of CMOS circuits, particularly Si-CMOS ICs. The drive circuits 221, 222, and 223 constitute the drive circuit of one pixel. In each of the drive circuits 221, 222, and 223, in addition to the power supply lines 240 and data lines 250 extending in the column direction, scanning lines 260 extending in the row direction are also provided. An active drive circuit is provided between each data line 250 and each light-emitting region of each pixel, and each light-emitting region of each pixel can be selected by this active drive circuit. The active drive circuit consists of transistors T 1 , T 2 and capacitor C. Transistors T 1 , T 2It is generally composed of thin film transistors using semiconductor thin films such as polycrystalline Si thin films, and the capacitor C is composed of a lower electrode, an insulating film, and an upper electrode laminated thereon. Transistor T 1 The source of is connected to the data line 250, and the drain is the transistor T 2 The gate of is connected to the gate of the transistor T, and the gate is connected to the scanning line 260. Transistor T 2 The source of is connected to the power supply line 240, and the drain is connected to any one of the pad portions 24a, 25a, 26a of the p-side wirings 24, 25, 26 of the micro LED substrate 100 when the driving circuit board 200 is superposed on the micro LED substrate 100. For this purpose, as shown in FIG. 10A, contact holes 230a, 230b, 230c are provided on the driving circuits 221, 222, 223 in the insulating film 230, and extraction electrodes 271, 272, 273 are provided through these contact holes 230a, 230b, 230c, respectively. The extraction electrode 271 is electrically connected to the drain of the transistor T 2 of, the extraction electrode 272 is electrically connected to the drain of the transistor T 2 of, and the extraction electrode 273 is electrically connected to the drain of the transistor T 2 of. When the micro LED substrate 100 and the driving circuit board 200 are superposed, the extraction electrodes 271, 272, 273 and the pad portions 24a, 25a, 26a of the p-side wirings 24, 25, 26 of the micro LED substrate 100 are electrically connected to each other via solder or the like. As the material of this solder, a material having a lower melting point than the metal constituting the thin film fuse 27 is used. The capacitor C is the transistor T 1It is connected between the drain and the power line 260. By selecting the scanning line 260 and the data line 250, each light-emitting region of each pixel is selected. On the other hand, in the driving circuit section 220, a common wiring 280 is provided in parallel with the scanning line 260. The common wiring 280 is used to determine the potential of the n-side electrodes 22 of the red light-emitting AlGaInN-based LED 30, the green light-emitting AlGaInN-based LED 40, and the blue light-emitting AlGaInN-based LED 50 that constitute the micro-LED substrate 100. A contact hole 230d is provided on the common wiring 280 in the insulating film 230, and a lead-out electrode 274 is provided through this contact hole 230d.

[0065] FIGS. 11A and 11B show a micro-LED display according to the second embodiment, which is configured by overlapping a micro-LED substrate 100 and a driving circuit substrate 200. The lead-out electrodes 271, 272, 273 of the driving circuit substrate 200 and the pad portions 24a, 25a, 26a of the p-side wirings 24, 25, 26 of the micro-LED substrate 100 are electrically connected to each other via solder (not shown), and the lead-out electrode 274 of the driving circuit substrate 200 and the lead-out electrode 23 for the n-side electrode of the micro-LED substrate 100 are electrically connected via solder (not shown).

[0066] FIGS. 12A and 12B show a region including a plurality of pixels in the micro-LED display.

[0067] According to this second embodiment, a through-silicon driving circuit substrate 200 similar to the through-silicon micro-LED substrate 100 according to the first embodiment is overlapped, and the lead-out electrodes 271, 272, 273 of the driving circuit substrate 200 and the pad portions 24a, 25a, 26a of the p-side wirings 24, 25, 26 of the micro-LED substrate 100 are electrically connected, and the lead-out electrode 274 of the driving circuit substrate 200 and the lead-out electrode 23 for the n-side electrode of the micro-LED substrate 100 are electrically connected, whereby a high-performance through-silicon micro-LED display can be easily realized.

[0068] <Third Embodiment> [Micro LED Substrate] FIG. 13 is a cross-sectional view showing a micro LED substrate 100 according to the third embodiment. FIG. 13 shows a portion of one pixel in the micro LED substrate 100. The plan view of this micro LED substrate 100 is the same as that of FIG. 1B. As shown in FIG. 13, this micro LED substrate 100 is different from the micro LED substrate 100 according to the first embodiment in that there is no sapphire substrate 10, and AlGaInN-based LEDs 60, 70, 80 having an emission wavelength of 390 nm to 470 nm are provided instead of the red-emitting AlGaInN-based micro LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50, and the thickness of the n-type GaN layer 11 is thin, for example, 1 to 2 μm. Otherwise, it is the same as the micro LED substrate 100 according to the first embodiment. The emission layers 61, 71, 81 of the AlGaInN-based LEDs 60, 70, 80 are, like the emission layers 14 to 16, for example, an In x Ga 1-x N layer and an In y Ga 1-y N layer that are alternately stacked to form an In x Ga 1-x N / In y Ga 1-y N MQW structure (x < y, 0 ≦ x < 1, 0 ≦ y < 1). When causing the micro LED substrate 100 to emit RGB light, a red phosphor, a green phosphor, and a blue phosphor are provided above the AlGaInN-based LEDs 60, 70, 80, respectively. Or, when the emission wavelengths of the emission layers 61, 71, 81 of the AlGaInN-based LEDs 60, 70, 80 are in the wavelength band of blue light emission (for example, 440 nm to 470 nm), a red phosphor and a green phosphor are provided above any two of the AlGaInN-based LEDs 60, 70, 80, respectively.

[0069] [Method for Manufacturing Micro LED Substrate] This micro-LED substrate 100 can be manufactured as follows. That is, AlGaInN-based LEDs 60, 70, and 80 are formed by a method similar to the method for forming the blue light-emitting AlGaInN-based LED 50 in the manufacturing method of the micro-LED substrate 100 according to the first embodiment. Next, similar to the manufacturing method of the micro-LED substrate 100 according to the first embodiment, steps such as the formation of the transparent insulating film 21, the formation of the contact holes 21a, 21b, 21c, 21d, the formation of the extraction electrodes 22 for the p-side electrode and the extraction electrodes 23 for the n-side electrode, and the formation of the thin-film fuse 27 are advanced. Next, the sapphire substrate 10 is separated from the n-type GaN layer 11 by a laser lift-off method or the like, and further, the n-type GaN layer 11 is etched by an RIE method or the like to have a thickness of, for example, 1 to 2 μm.

[0070] According to the third embodiment, the same advantages as those of the first embodiment can be obtained.

[0071] 〈Fourth Embodiment〉 [Micro-LED Display] In the micro-LED display according to the fourth embodiment, as shown in FIG. 14, the micro-LED substrate 100 according to the third embodiment and the driving circuit substrate 200 according to the second embodiment are overlapped. Then, as shown in FIG. 15, an insulating film 300 is provided on the n-type GaN layer 11 of the micro-LED substrate 100, and openings 301, 302, and 303 are provided in the insulating film 300 at portions corresponding to the regions that cause red light emission, green light emission, and blue light emission, respectively. Phosphors 310 for red light emission, 320 for green light emission, and 330 for blue light emission are filled in these openings 301, 302, and 303, respectively. A color filter layer 400 is provided on the insulating film 300. A filter 410 that transmits only red light is provided on the phosphor 310 for red light emission, a filter 420 that transmits only green light is provided on the phosphor 320 for green light emission, and a filter 430 that transmits only blue light is provided on the phosphor 330 for blue light emission. Since the emission wavelengths of the AlGaInN-based LEDs 60, 70, and 80 are 390 nm to 470 nm, red light, green light, and blue light can be obtained by the excitation of the phosphors 310, 320, and 330, respectively. A transparent substrate 500 is provided on the color filter layer 400. As the transparent substrate 500, for example, a flexible film is used. Other aspects are the same as those of the micro-LED display according to the second embodiment.

[0072] According to the fourth embodiment, the same advantages as those of the second embodiment can be obtained.

[0073] 〈Fifth Embodiment〉 [XR Glass] FIG. 16 shows an XR glass according to the fifth embodiment. As shown in FIG. 16, in this XR glass, a see-through display unit 700 composed of a see-through micro-LED display according to the first or third embodiment is mounted on the inner surface of the portions of the windshields 601 and 602 for both eyes that face the pupils of the user's both eyes when the user wears this XR glass. The material of the windshields 601 and 602 is generally glass or plastic, but may be a lens for myopia or hyperopia as the case may be. Since the distance between the display unit 700 and the pupils of the user's both eyes when the user wears this XR glass is as short as a dozen or so millimeters, a lens or a transparent column assembly (see, for example, Patent Documents 4 and 5) (not shown) for adjusting the focal length is mounted between the pupil and the light emitting surface of the display unit 700, and each pixel is adjusted to be in focus without burdening the eyes. The display unit 700 is connected to the drive circuit board 200 according to the second or fourth embodiment via a flexible printed circuit 800. The flexible printed circuit 800 and the drive circuit board 200 are mounted on the frame 603. The drive circuit board 200 is mounted on the ear hook portion of the frame 603.

[0074] According to the fifth embodiment, the following advantages can be obtained. That is, since the display unit 700 for XR glasses is composed of a micro-LED substrate 100 in which red light-emitting AlGaInN-based micro-LEDs 30, green light-emitting AlGaInN-based micro-LEDs 40, and blue light-emitting AlGaInN-based micro-LEDs 50 are arranged in a two-dimensional array, the area of the micro-LED chip 10 occupied by one pixel of the display unit 700 can be made extremely small, and the aperture ratio of one pixel can be greatly increased. A pixel density of several thousand PPI can also be realized. Further, in this XR glass, since the printed circuit board 500 on which the drive circuit board 550 is mounted and the display unit 300 are connected to each other by the flexible printed circuit 400, the degree of freedom in manufacturing the array of the drive circuits 560 of the drive circuit board 550 is improved. As described above, a high-performance XR glass can be easily realized.

[0075] Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications based on the technical idea of the present invention are possible.

[0076] For example, the numerical values, configurations, shapes, materials, methods, etc. cited in the above embodiments are merely examples, and numerical values, configurations, shapes, materials, methods, etc. different from these may be used as necessary.

[0077] For example, in the fourth embodiment, when the emission wavelengths of the light-emitting layers 61, 71, 81 of the AlGaInN-based LEDs 60, 70, 80 are in the wavelength band of blue light emission (for example, 440 nm to 470 nm), instead of filling the opening 303 of the insulating film 300 with the phosphor 330 for blue light emission, a transparent material without wavelength conversion (for example, PDMS, etc.) may be filled.

Explanation of Reference Numerals

[0078] 10... Sapphire substrate, 11... n-type GaN layer, 12... Insulating film, 12a... Opening, 13... GaN layer, 14, 15, 16... Light-emitting layer, 17... p-type GaN layer, 18... Insulating film, 18a... Contact hole, 19... p-side electrode, 20... n-side electrode, 21... Transparent insulating film, 22... Lead-out electrode for p-side electrode, 23... Take-out electrode for n-side electrode, 24, 25, 26... p-side wiring, 24a, 25a, 26a... Pad portion, 27... Thin-film fuse, 30... Red light-emitting AlGaInN-based micro-LED, 40... Green light-emitting AlGaInN-based micro-LED, 50... Blue light-emitting AlGaInN-based micro-LED, 60... AlGaInN-based micro-LED, 100... Micro-LED substrate, 200... Driving circuit substrate, 210... Glass substrate, 220... Driving circuit portion, 230... Insulating film, 230a, 230b, 230c... Contact hole, 271, 272, 273... Take-out electrode

Claims

1. a micro light-emitting diode array in which at least one red light-emitting AlGaInN micro light-emitting diode, at least one green light-emitting AlGaInN micro light-emitting diode, and at least one blue light-emitting AlGaInN micro light-emitting diode are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The red light emitting AlGaInN micro light emitting diode, the green light emitting AlGaInN micro light emitting diode, and the blue light emitting AlGaInN micro light emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light emitting layer provided on the n-type GaN layer in the opening of the insulating film, a p-type GaN layer provided on the light emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in a portion where the light emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; a first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the p-side electrodes of each of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode and the blue light-emitting AlGaInN-based micro light-emitting diode; the first p-side wiring and the p-side electrode extraction electrode of each of the red light-emitting AlGaInN-based micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the green light-emitting AlGaInN-based micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the blue light-emitting AlGaInN-based micro light-emitting diodes are electrically connected to each other via thin film fuses, A micro light-emitting diode substrate, in which an n-side electrode extraction electrode is provided on the transparent insulating film and electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film.

2. The micro light-emitting diode substrate according to claim 1 , wherein a pad portion is provided at one end of each of the first p-side wiring, the second p-side wiring, and the third p-side wiring.

3. The micro light-emitting diode substrate according to claim 1 , wherein the n-type GaN layer is disposed on a sapphire substrate.

4. A micro light emitting diode substrate; a drive circuit board on which a plurality of drive circuits that can be controlled and driven independently of each other are arranged in a two-dimensional array; having The micro light emitting diode substrate is a micro light-emitting diode array in which at least one red light-emitting AlGaInN micro light-emitting diode, at least one green light-emitting AlGaInN micro light-emitting diode, and at least one blue light-emitting AlGaInN micro light-emitting diode are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The red light emitting AlGaInN micro light emitting diode, the green light emitting AlGaInN micro light emitting diode, and the blue light emitting AlGaInN micro light emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light emitting layer provided on the n-type GaN layer in the opening of the insulating film, a p-type GaN layer provided on the light emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in a portion where the light emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; a first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the p-side electrodes of each of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode and the blue light-emitting AlGaInN-based micro light-emitting diode; the first p-side wiring and the p-side electrode extraction electrode of each of the red light-emitting AlGaInN-based micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the green light-emitting AlGaInN-based micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the blue light-emitting AlGaInN-based micro light-emitting diodes are electrically connected to each other via thin film fuses, an n-side electrode lead-out electrode electrically connected to each of the n-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; The drive circuit board is A first driving circuit, a second driving circuit, and a third driving circuit for driving the red light emitting AlGaInN micro light emitting diode, the green light emitting AlGaInN micro light emitting diode, and the blue light emitting AlGaInN micro light emitting diode, which constitute one pixel of the micro light emitting diode substrate; a first extraction electrode connected to a terminal of the first driving circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN micro light-emitting diode; a second extraction electrode connected to a terminal of the second driving circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN micro light-emitting diode; and a third extraction electrode connected to a terminal of the third driving circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN micro light-emitting diode; Wiring for setting the potential of the n-side electrodes of the red light-emitting AlGaInN micro light-emitting diode, the green light-emitting AlGaInN micro light-emitting diode, and the blue light-emitting AlGaInN micro light-emitting diode; a fourth extraction electrode electrically connected to the wiring; having A micro light-emitting diode display in which the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring and the extraction electrode for the n-side electrode, respectively.

5. The micro light-emitting diode display of claim 4, wherein the micro light-emitting diode substrate and the driving circuit substrate are superimposed so that the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode face each other, and the first p-side wiring, the second p-side wiring, the third p-side wiring and the extraction electrode for the n-side electrode, respectively, and the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring and the extraction electrode for the n-side electrode, respectively.

6. The micro light-emitting diode display of claim 4, wherein the driving circuit board has a substrate, a driving circuit section provided on the substrate, and an insulating film provided on the driving circuit section, and the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are respectively provided in a first contact hole, a second contact hole, a third contact hole and a fourth contact hole provided in the insulating film.

7. The micro light-emitting diode display according to claim 4, wherein the micro light-emitting diode display is of an active matrix driving type or a passive driving type.

8. A display is provided. The above display is A display unit using a micro light-emitting diode substrate; a drive circuit board on which a plurality of drive circuits that can be controlled and driven independently of each other are arranged in a two-dimensional array; a flexible printed circuit for wiring the display unit and the drive circuit board; The micro light emitting diode substrate is a micro light-emitting diode array in which at least one red light-emitting AlGaInN micro light-emitting diode, at least one green light-emitting AlGaInN micro light-emitting diode, and at least one blue light-emitting AlGaInN micro light-emitting diode are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The red light emitting AlGaInN micro light emitting diode, the green light emitting AlGaInN micro light emitting diode, and the blue light emitting AlGaInN micro light emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light emitting layer provided on the n-type GaN layer in the opening of the insulating film, a p-type GaN layer provided on the light emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in a portion where the light emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; a first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the p-side electrodes of each of the red light-emitting AlGaInN-based micro light-emitting diode, the green light-emitting AlGaInN-based micro light-emitting diode and the blue light-emitting AlGaInN-based micro light-emitting diode; the first p-side wiring and the p-side electrode extraction electrode of each of the red light-emitting AlGaInN-based micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the green light-emitting AlGaInN-based micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the blue light-emitting AlGaInN-based micro light-emitting diodes are electrically connected to each other via thin film fuses, an n-side electrode lead electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; The drive circuit board is A first driving circuit, a second driving circuit, and a third driving circuit for driving the red light emitting AlGaInN micro light emitting diode, the green light emitting AlGaInN micro light emitting diode, and the blue light emitting AlGaInN micro light emitting diode, which constitute one pixel of the micro light emitting diode substrate; a first extraction electrode connected to a terminal of the first driving circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN micro light-emitting diode; a second extraction electrode connected to a terminal of the second driving circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN micro light-emitting diode; and a third extraction electrode connected to a terminal of the third driving circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN micro light-emitting diode; Wiring for setting the potential of the n-side electrodes of the red light-emitting AlGaInN micro light-emitting diode, the green light-emitting AlGaInN micro light-emitting diode, and the blue light-emitting AlGaInN micro light-emitting diode; a fourth extraction electrode electrically connected to the wiring; having The first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring and the n-side electrode extraction electrode, respectively.

9. a micro light-emitting diode array in which at least a first AlGaInN micro light-emitting diode, a second AlGaInN micro light-emitting diode, and a third AlGaInN micro light-emitting diode having an emission wavelength of 390 nm or more and 470 nm or less are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; A first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, respectively; the first p-side wiring and the p-side electrode extraction electrode of each of the first AlGaInN micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the second AlGaInN micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the third AlGaInN micro light-emitting diodes are electrically connected to each other via thin film fuses, A micro light-emitting diode substrate, in which an n-side electrode extraction electrode is provided on the transparent insulating film and electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film.

10. A micro light emitting diode substrate; a drive circuit board on which a plurality of drive circuits that can be controlled and driven independently of each other are arranged in a two-dimensional array; having The micro light emitting diode substrate is a micro light-emitting diode array in which at least a first AlGaInN micro light-emitting diode, a second AlGaInN micro light-emitting diode, and a third AlGaInN micro light-emitting diode having an emission wavelength of 390 nm or more and 470 nm or less are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; A first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, respectively; the first p-side wiring and the p-side electrode extraction electrode of each of the first AlGaInN micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the second AlGaInN micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the third AlGaInN micro light-emitting diodes are electrically connected to each other via thin film fuses, an n-side electrode lead electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; The drive circuit board is A first driving circuit, a second driving circuit and a third driving circuit for driving the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, which constitute one pixel of the micro light-emitting diode substrate; a first extraction electrode connected to a terminal of the first driving circuit electrically connected to the first p-side wiring of the first AlGaInN micro light-emitting diode; a second extraction electrode connected to a terminal of the second driving circuit electrically connected to the second p-side wiring of the second AlGaInN micro light-emitting diode; and a third extraction electrode connected to a terminal of the third driving circuit electrically connected to the third p-side wiring of the third AlGaInN micro light-emitting diode; Wiring for setting the potential of the n-side electrode of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode, and the third AlGaInN micro light-emitting diode; a fourth extraction electrode electrically connected to the wiring; having the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring and the n-side electrode extraction electrode, respectively; A micro light-emitting diode display in which a wavelength conversion layer for extracting red light, green light and blue light from the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, respectively, is provided on the rear surface of the n-type GaN layer, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, respectively.

11. A display, The above display is A display unit using a micro light-emitting diode substrate; a drive circuit board on which a plurality of drive circuits that can be controlled and driven independently of each other are arranged in a two-dimensional array; a flexible printed circuit for wiring the display unit and the drive circuit board; The micro light emitting diode substrate is a micro light-emitting diode array in which at least a first AlGaInN micro light-emitting diode, a second AlGaInN micro light-emitting diode, and a third AlGaInN micro light-emitting diode having an emission wavelength of 390 nm or more and 470 nm or less are arranged per pixel on an n-type GaN layer; A transparent insulating film provided so as to cover the micro light-emitting diode array, The first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer at the opening of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer at a portion where the light-emitting layer is not provided; a p-side electrode lead-out electrode electrically connected to each of the p-side electrodes through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; A first p-side wiring, a second p-side wiring and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, respectively; the first p-side wiring and the p-side electrode extraction electrode of each of the first AlGaInN micro light-emitting diodes, the second p-side wiring and the p-side electrode extraction electrode of each of the second AlGaInN micro light-emitting diodes, and the third p-side wiring and the p-side electrode extraction electrode of each of the third AlGaInN micro light-emitting diodes are electrically connected to each other via thin film fuses, an n-side electrode lead electrode electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film is provided on the transparent insulating film; The drive circuit board is A first driving circuit, a second driving circuit and a third driving circuit for driving the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode, which constitute one pixel of the micro light-emitting diode substrate; a first extraction electrode connected to a terminal of the first driving circuit electrically connected to the first p-side wiring of the first AlGaInN micro light-emitting diode; a second extraction electrode connected to a terminal of the second driving circuit electrically connected to the second p-side wiring of the second AlGaInN micro light-emitting diode; and a third extraction electrode connected to a terminal of the third driving circuit electrically connected to the third p-side wiring of the third AlGaInN micro light-emitting diode; Wiring for setting the potential of the n-side electrode of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode, and the third AlGaInN micro light-emitting diode; a fourth extraction electrode electrically connected to the wiring; having the first extraction electrode, the second extraction electrode, the third extraction electrode and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring and the n-side electrode extraction electrode, respectively; An XR glass having a wavelength conversion layer for extracting red light, green light and blue light from the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode on the back surface of the n-type GaN layer, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN micro light-emitting diode, the second AlGaInN micro light-emitting diode and the third AlGaInN micro light-emitting diode.

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