Coherent de-excitation of atomic object crystalline motion modes for smooth transport in ion-trap quantum computers

Abstract

Quantum computers, systems, devices, etc., and corresponding methods for de-exciting coherent motional modes of atomic object crystals confined by an atomic object confinement device. One or more voltage sources are controlled to apply a waveform to an array of electrodes of the atomic object confinement device. The application of the waveform to the array of electrodes causes each of one or more transport operations to be performed on a respective atomic object crystal, de-exciting at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations. A respective shim waveform configured to de-excite at least one coherent motional mode may be determined based on a parameterized shim waveform and a calibration process for determining parameters corresponding to the atomic object confinement device.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Application No. 63 / 266,923, filed January 19, 2022, the contents of which are incorporated herein by reference in their entirety.

[0002] Various embodiments relate to atomic objects confined by an atomic object confinement apparatus. For example, various embodiments relate to de-exciting the motional modes of an atomic object crystal confined by an atomic object confinement apparatus. For example, various embodiments relate to de-exciting the motional modes of an atomic object crystal in an atomic object trap quantum computer. [Background technology]

[0003] A quantum charge-coupled device (QCCD) is a quantum computing architecture in which atomic objects are confined within an atomic object confinement device, and at least some of the atomic objects are used to perform quantum computations. Atomic objects may be transported between different locations of the atomic object confinement device. However, these transport operations cause the atomic objects to heat up. Cooling operations may be performed on the atomic objects to cool them to a desired level. However, these cooling operations are slow compared to other operations performed by a quantum computer and therefore represent a significant portion of the quantum computer's processing time. Through applied effort, ingenuity, and innovation, many of the shortcomings of such conventional cooling systems have been overcome by developing solutions constructed in accordance with embodiments of the present invention, many examples of which are described in detail herein. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Patent Application No. 63 / 235,007 [Patent Document 2] U.S. Patent Application No. 17 / 533,587 [Patent Document 3] U.S. Patent No. 11,037,776 Summary of the Invention [Means for solving the problem]

[0005] Exemplary embodiments provide quantum computers, systems, devices, etc., and corresponding methods for de-exciting coherent motional modes of an atomic object crystal confined by an atomic object confinement device. In various scenarios, the coherent motional modes of the atomic object crystal are excited during a transport operation. In various embodiments, the coherent motional modes are then de-excited by applying one or more shim waveforms to generate an electric potential gradient at the location of the atomic object crystal. The electric potential gradient imparts a force to the atomic object crystal that nullifies the motion of the excited coherent motional modes to reduce the motion due to the coherent motional modes. In various embodiments, the electric potential gradient evolves over time and / or oscillates in time with a frequency substantially equal to each motional mode such that the instantaneous force imparted to the atomic object crystal experiencing the electric potential gradient is substantially antiparallel and / or substantially equal and / or similar to the amplitude of the acceleration of the atomic object due to each motional mode. Thus, the kinetic energy of the atomic object crystal is reduced.

[0006] According to one aspect, a method for calibrating parameters of a shim waveform for use in a de-excitation operation by a specific atomic object confinement device is provided. In an exemplary embodiment, the method includes: causing the specific atomic object confinement device to perform a transfer operation on at least one atomic object crystal confined by the atomic object confinement device; capturing a first crystal spectrum for the atomic object crystal; identifying one or more sidebands within the first crystal spectrum; determining a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum; defining a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, the phase-parameterized shim waveform being a function of phase; applying the phase-parameterized shim waveform to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capturing one or more second crystal spectra. The method further includes determining a phase within a phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra, defining a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and providing or storing the shim waveform for use when performing a quantum operation using the particular atomic object confinement device.

[0007] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0008] In an exemplary embodiment, the method further includes determining a plurality of phase-parameterized shim waveforms, wherein each of the plurality of phase-parameterized shim waveforms and a respective phase corresponding to a respective sideband of the one or more sidebands is determined based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0009] In an exemplary embodiment, the method further includes determining a multi-mode shim waveform based on the plurality of phase-parameterized shim waveforms and their respective phases.

[0010] In an exemplary embodiment, the shim waveform for a particular mode comprises a series of voltages to be applied to an array of electrodes of a particular atomic object confinement device to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0011] In an exemplary embodiment, a shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0012] In an exemplary embodiment, the shim waveform of a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0013] In an exemplary embodiment, capturing each of the first and second crystal spectra includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam being characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0014] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are each separated from the primary line by a respective frequency corresponding to a respective motion frequency.

[0015] According to another aspect, an apparatus configured to de-excite and / or control a motion mode of an atomic object crystal confined by an atomic object confinement device is provided. In an exemplary embodiment, the apparatus includes at least one processor and a memory having computer-executable instructions stored thereon. When executed by the at least one processor, the computer-executable instructions are configured to: cause a particular atomic object confinement device to at least perform a transfer operation on at least one atomic object crystal confined by the atomic object confinement device; capture a first crystal spectrum for the atomic object crystal; identify one or more sidebands in the first crystal spectrum; determine a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum; define a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, where the phase-parameterized shim waveform is a function of phase; and apply the phase-parameterized shim waveform to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capture one or more second crystal spectra. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine, based on the one or more second crystal spectra, a phase within a phase range that minimizes at least each sideband of the one or more sidebands, define a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and provide or store the shim waveform for use when performing a quantum operation using the particular atomic object confinement device.

[0016] In an exemplary embodiment, the device is a controller for a quantum computer.

[0017] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a plurality of phase-parameterized shim waveforms, wherein each of the plurality of phase-parameterized shim waveforms and a respective phase corresponding to a respective sideband of the one or more sidebands is determined based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0018] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a multi-mode shim waveform based on the plurality of phase-parameterized shim waveforms and their respective phases.

[0019] In an exemplary embodiment, the shim waveform for a particular mode comprises a series of voltages to be applied in an array to electrodes of a particular atomic object confinement device to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0020] In an exemplary embodiment, a shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0021] In an exemplary embodiment, the shim waveform of a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0022] In an exemplary embodiment, capturing each of the first crystal spectrum and the second crystal spectrum includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam being characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0023] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are each separated from the primary line by a respective frequency corresponding to a respective motion frequency.

[0024] According to yet another aspect, a system is provided. In an exemplary embodiment, the system includes an atomic object confinement device configured to confine one or more atomic object crystals therein, and a controller. The controller includes at least one processor and a memory having computer-executable instructions stored thereon, which, when executed by the at least one processor, are configured to cause the controller to at least perform a transfer operation on at least one atomic object crystal confined by the atomic object confinement device, capture a first crystal spectrum for the atomic object crystal, identify one or more sidebands in the first crystal spectrum, determine a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum, define a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, where the phase-parameterized shim waveform is a function of phase, and apply the phase-parameterized shim waveform to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capture one or more second crystal spectra. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine, based on the one or more second crystal spectra, a phase within a phase range that minimizes at least each sideband of the one or more sidebands, define a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and provide or store the shim waveform for use when performing a quantum operation using the particular atomic object confinement device.

[0025] In an exemplary embodiment, the system is a QCCD quantum computer.

[0026] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a plurality of phase-parameterized shim waveforms, each of the plurality of phase-parameterized shim waveforms corresponding to a respective sideband and a respective phase of the one or more sidebands, based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0027] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a multi-mode shim waveform based on the plurality of phase-parameterized shim waveforms and their respective phases.

[0028] In an exemplary embodiment, the shim waveform for a particular mode comprises a series of voltages to be applied to an array of electrodes of a particular atomic object confinement device to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0029] In an exemplary embodiment, a shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0030] In an exemplary embodiment, the shim waveform of a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0031] In an exemplary embodiment, capturing each of the first crystal spectrum and the second crystal spectrum includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam being characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0032] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are each separated from the primary line by a respective frequency corresponding to a respective motion frequency.

[0033] According to another aspect, a method for using coherent mode de-excitation during transport operations of atomic object crystals confined by an atomic object confinement device is provided. In an exemplary embodiment, the method includes identifying one or more transport operations to be performed at least partially in parallel. Each transport operation of the one or more transport operations corresponds to moving a respective atomic object crystal from a respective start location to a respective destination location, the start location and the destination location being locations within the atomic object confinement device. The method further includes determining a respective shim waveform for at least one of the one or more transport operations, determining a respective carrier waveform for each transport operation, determining an applied waveform based on an aggregation of the respective shim waveforms and the respective carrier waveforms, and controlling one or more voltage sources to apply a waveform voltage signal according to the applied waveform to electrodes of an array of electrodes of the atomic object confinement device. Application of the applied waveform to the array of electrodes causes each of the one or more transport operations to be performed on the respective atomic object crystals, de-exciting at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations.

[0034] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0035] In an exemplary embodiment, each shim waveform is an aggregation of two or more specific mode shim waveforms, each of the two or more specific mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0036] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, wherein the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and the first motional frequency and the second motional frequency are different.

[0037] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretching mode.

[0038] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to perform one or more transport operations and to induce a gradient in the electrical potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0039] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location to a respective destination location of at least one of the one or more transport operations.

[0040] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential co-located with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential co-located with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0041] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0042] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0043] In an exemplary embodiment, the shim waveforms for each particular mode are each associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at the location of the particular atomic object confinement device where the respective atomic object crystal is located.

[0044] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

[0045] According to another aspect, an apparatus configured to cause and / or control de-excitation of motional modes of atomic object crystals confined by an atomic object confinement device is provided. In an exemplary embodiment, the apparatus includes at least one processor and a memory storing computer-executable instructions. When executed by the at least one processor, the computer-executable instructions are configured to at least identify one or more transfer operations to be performed at least partially in parallel. Each transfer operation of the one or more transfer operations corresponds to moving a respective atomic object crystal from a respective start location to a respective destination location, the start location and the destination location being locations within the atomic object confinement device. When executed by the at least one processor, the computer-executable instructions are further configured to at least cause the apparatus to determine a respective shim waveform for at least one of the one or more transfer operations, determine a respective carrier waveform for each transfer operation, determine an applied waveform based on an aggregation of the respective shim waveforms and the respective carrier waveforms, and control one or more voltage sources to apply a waveform voltage signal according to the applied waveform to electrodes of an array of electrodes of the atomic object confinement device. Application of the applied waveform to the array of electrodes causes each of one or more transport operations to be performed on the respective atomic object crystal, de-exciting at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations.

[0046] In an exemplary embodiment, the device is a controller for a quantum computer.

[0047] In an exemplary embodiment, each shim waveform is an aggregation of two or more specific mode shim waveforms, each of the two or more specific mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0048] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, wherein the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and the first motional frequency and the second motional frequency are different.

[0049] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretching mode.

[0050] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to perform one or more transport operations and to induce a gradient in the electrical potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0051] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location to a respective destination location of at least one of the one or more transport operations.

[0052] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential co-located with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential co-located with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0053] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0054] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0055] In an exemplary embodiment, the shim waveforms for each particular mode are each associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at the location of the particular atomic object confinement device in which the respective atomic object crystal is located.

[0056] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

[0057] According to yet another aspect, a system is provided. In an exemplary embodiment, the system includes an atomic object confinement device configured to confine one or more atomic object crystals therein and a controller. The controller includes at least one processor and a memory having computer-executable instructions stored therein, the computer-executable instructions, when executed by the at least one processor, configured to at least identify one or more transfer operations to be performed at least partially in parallel. Each transfer operation of the one or more transfer operations corresponds to moving a respective atomic object crystal from a respective start location to a respective destination location, the start location and the destination location being locations within the atomic object confinement device. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the controller to at least determine a respective shim waveform for at least one of the one or more transfer operations, determine a respective carrier waveform for each transfer operation, determine an applied waveform based on an aggregation of the respective shim waveforms and the respective carrier waveforms, and control one or more voltage sources to apply a waveform voltage signal according to the applied waveform to electrodes of an electrode array of the atomic object confinement device. Application of the applied waveform to the array of electrodes causes each of one or more transport operations to be performed on the respective atomic object crystal, de-exciting at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations.

[0058] In an exemplary embodiment, the system is a QCCD quantum computer.

[0059] In an exemplary embodiment, each shim waveform is an aggregation of two or more specific mode shim waveforms, each of the two or more specific mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0060] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, wherein the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and the first motional frequency and the second motional frequency are different.

[0061] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretching mode.

[0062] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to perform one or more transport operations and to induce a gradient in the electrical potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0063] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location to a respective destination location of at least one of the one or more transport operations.

[0064] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential co-located with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential co-located with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0065] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0066] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0067] In an exemplary embodiment, the shim waveforms for each particular mode are each associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at the location of the particular atomic object confinement device in which the respective atomic object crystal is located.

[0068] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

[0069] According to another aspect, a method is provided for reducing parasitic cross-talk between de-excitation operations performed at least partially in parallel at different locations within an atomic object confinement device. In an exemplary embodiment, the method includes the steps of determining a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device, assigning a first axial frequency to a first potential well located at the first location and assigning a second axial frequency to a second potential well located at the second location, wherein the first axial frequency and the second axial frequency are separated from each other by 0.05 to 5 MHz; determining a first shim waveform corresponding to an axial frequency and a second shim waveform corresponding to a second axial frequency; and controlling one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at a first location based on the first shim waveform, and a second de-excitation operation to be performed at a second location based on the second shim waveform.

[0070] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0071] According to another aspect, an apparatus configured to cause and / or control de-excitation of motional modes of an atomic object crystal confined by an atomic object confinement device is provided. In an exemplary embodiment, the apparatus comprises at least one processor and a memory having stored thereon computer-executable instructions that, when executed by the at least one processor, cause the apparatus to at least determine a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device; assign a first axial frequency to a first potential well located at the first location; and assign a second axial frequency to a second potential well located at the second location, wherein the first axial frequency and the second axial frequency are spaced apart from each other by 0.05 to 5 MHz. determine a first shim waveform corresponding to the first axial frequency and a second shim waveform corresponding to the second axial frequency; and control one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at the first location based on the first shim waveform, and a second de-excitation operation to be performed at the second location based on the second shim waveform.

[0072] In an exemplary embodiment, the device is a controller for a quantum computer.

[0073] According to yet another aspect, a system is provided. In an exemplary embodiment, the system includes an atomic object confinement device configured to confine one or more atomic object crystals therein, and a controller. The controller includes at least one processor and a memory having computer-executable instructions stored therein, the computer-executable instructions, when executed by the at least one processor, causing the controller to at least determine a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device; assign a first axial frequency to a first potential well located at the first location; and assign a second axial frequency to a second potential well located at the second location, wherein the first axial frequency and the second axial frequency are determined. are spaced apart from one another by 0.05 to 5 MHz; determine a first shim waveform corresponding to the first axial frequency and a second shim waveform corresponding to the second axial frequency; and control one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at the first location based on the first shim waveform, and a second de-excitation operation to be performed at the second location based on the second shim waveform.

[0074] In an exemplary embodiment, the system is a QCCD quantum computer.

[0075] Having thus generally described the invention, reference is now made to the accompanying drawings, which are not necessarily drawn to scale. [Brief explanation of the drawings]

[0076] [Figure 1] FIG. 1 is a block diagram of an exemplary atomic object quantum computer, in accordance with an exemplary embodiment. [Figure 2] FIG. 2 is a block diagram illustrating two atomic object crystals within a portion of an atomic object confinement device, in accordance with an illustrative embodiment. [Figure 3] 1 is a schematic diagram illustrating an atomic object crystal oscillating in a coherent center-of-mass motion mode and the forces imparted within the atomic object crystal as a result of application of a shim waveform of a corresponding particular mode, according to an exemplary embodiment. [Figure 4] 10 is a flowchart illustrating various processes, procedures, and / or operations for performing shim waveform calibration in accordance with exemplary embodiments. [Figure 5] 1 is a flowchart illustrating various processes, procedures, and / or operations for applying a shim waveform implementation of quantum computing, in accordance with example embodiments. [Figure 6] 10 is a flowchart illustrating various processes, procedures, and / or operations for reducing parasitic crosstalk between de-excitation signals simultaneously applied to multiple areas of an atomic object confinement device, according to example embodiments. [Figure 7] FIG. 1 is a schematic diagram of an exemplary controller of a quantum computer comprising an atomic object confinement device configured to confine an atomic object therein, in accordance with an illustrative embodiment; [Figure 8] FIG. 1 is a schematic diagram of an exemplary computing entity of a quantum computer system that may be used in accordance with exemplary embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0077] The present invention is described more fully hereinafter with reference to the accompanying drawings, in which some, but not all, embodiments of the invention are shown. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also indicated as " / ") is used herein in both an alternative and connective sense unless otherwise indicated. The terms "illustrative" and "exemplary" are used as examples without an indication of a level of quality. The terms "generally" and "about" refer to within applicable engineering and / or manufacturing tolerances and / or user measurement capabilities, unless otherwise indicated. Like numbers refer to like elements throughout.

[0078] In various scenarios, atomic objects are confined within an atomic object confinement device. In various embodiments, the atomic object confinement device is an ion trap, such as a surface ion trap or a Paul ion trap. In various embodiments, the atomic objects are ions, atoms, ion molecules, neutral molecules, or the like. In various embodiments, the atomic objects confined by the atomic object confinement device are made into atomic object crystals. For example, the atomic object crystal includes two or more atomic objects. In an exemplary embodiment, the atomic object crystal includes four atomic objects. In an exemplary embodiment, a first component of the atomic object crystal is a cooling ion for use in a sympathetic cooling scheme for atomic object crystals. In an exemplary embodiment, a second component of the atomic object crystal is a qubit ion for use as a qubit in a quantum computer. In various embodiments, the first component of the atomic object crystal and the second component of the atomic object crystal may be of the same atomic type or different atomic types, depending on the application. As used herein, the atomic type of a component of an atomic object and / or atomic object crystal refers to the type of the chemical element, atomic number, atomic / ionic species, etc. of the component of the atomic object and / or atomic object crystal. In an exemplary embodiment, the atomic object crystal includes two first components (e.g., two ions of a first atomic type) and two second components (e.g., two ions of a second atomic type).

[0079] In various embodiments, atomic objects confined within atomic object confinement devices are used to conduct experiments, controlled quantum state evolution, quantum computations, etc. In various embodiments, in order for atomic objects confined within atomic object confinement devices to be used to conduct experiments, controlled quantum state evolution, quantum computations, etc., the atomic objects need to be cryogenically cooled and / or to near the motional ground state for the atomic objects and / or their components. For example, the motional states of the atomic objects and / or atomic object crystals need to be de-excited so that the atomic objects are in their motional ground states so that the atomic objects (e.g., qubit ions) may be used to conduct experiments, controlled quantum state evolution, quantum computations, etc.

[0080] In various scenarios, atomic objects and / or atomic object crystals may be transported from their respective starting locations within an atomic object confinement device to their respective destination locations within the atomic object confinement device during experiments, controlled quantum state evolution, quantum computations, and the like. During such transport operations, the atomic objects and / or atomic object crystals are excited such that they are no longer in their kinetic ground state. Conventionally, laser cooling is used to reduce the kinetic energy of atomic objects and / or their components. However, laser cooling is a slow process compared to various other processes performed during experiments, controlled quantum state evolution, quantum computations, and the like. For example, the time required to perform transport and cooling operations is conventionally considered a limiting factor in the computational speed of QCCD quantum computers. Moreover, the significant amount of time required to cool the atomic object crystals after performing transport operations limits the depth of quantum circuits and / or quantum programs that can be implemented by QCCD quantum computers and can contribute to memory errors. Therefore, a technical challenge exists regarding how to quickly and efficiently reduce the kinetic energy of atomic object crystals and de-excite the kinetic states of the atomic object crystals.

[0081] An atomic object crystal including two atomic objects (e.g., a coolant ion and a qubit ion) may oscillate in a center-of-mass mode, in which the two atomic objects oscillate in a manner such that the distance between the two atomic objects remains substantially constant, such that the center-of-mass (COM) of the atomic object crystal oscillates. An atomic object crystal including two atomic objects may also oscillate in a stretching mode, in which the distance between the two atomic objects periodically stretches and contracts. Additionally, the atomic object crystal may oscillate in a superposition of a COM mode and / or a stretching mode, which may have different motion frequencies, motion amplitudes, and / or phases. For example, the atomic object crystal may oscillate in a superposition of a COM mode characterized by a COM frequency and a stretching mode characterized by a stretching frequency, such that the motion of the atomic object crystal includes a component characterized by the COM frequency and a component characterized by the stretching frequency. Additional motion modes and their superpositions are also possible, particularly when the charge-to-mass ratios of the components of the atomic object crystal are different. Therefore, de-excitation of these superpositions of motion modes presents a technical challenge.

[0082] An additional technical challenge is presented when the atomic object crystal to be de-excited is one of multiple atomic object crystals confined by an atomic object confinement device. In such a scenario, it is desirable to de-excite the particular atomic object crystal without simultaneously exciting any of the other atomic object crystals that are also confined by the atomic object confinement device. It may also be desirable to perform two or more de-excitation operations at least partially in parallel (e.g., semi-simultaneously and / or where the performance of the de-excitation operations at least partially overlaps in time). Thus, a technical challenge exists as to how to localize the effects of the de-excitation operations.

[0083] Various embodiments provide technical solutions to these and other technical challenges related to de-exciting coherent motional modes of an atomic object crystal confined by an atomic object confinement device. For example, various embodiments provide mode-specific and / or multi-mode shim waveforms. The shim waveform includes a series of voltages. The series of voltages includes respective voltages to be applied to each electrode and / or a subset of electrodes of an electrode array of the atomic object confinement device at multiple time steps. When each voltage of the series of voltages is applied to the electrode array of the atomic object confinement device in a time-ordered sequence specified by the series of voltages, a time-evolving potential gradient is formed at a location of the atomic object crystal to be de-excited. The potential gradient is configured to impart a force to the atomic object crystal (and / or its components) that counteracts the oscillatory motion of the atomic object crystal (and / or its components).

[0084] In various embodiments, the mode-specific and / or multi-mode shim waveforms are configured to localize the resulting potential gradient at a specific location within the atomic object confinement device. For example, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient is localized at the location of the target atomic object crystal without affecting other nearby atomic object crystals and / or other atomic object crystals within the atomic object confinement device. In various embodiments, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient may be non-constant, such that a de-excitation operation may be performed on the atomic object crystal at least partially in parallel with the performance of a transfer operation on the atomic object crystal (e.g., semi-simultaneously and / or when the performance of the operations at least partially overlaps in time). For example, a de-excitation operation may be performed on the atomic object crystal while the atomic object crystal is being transferred to further reduce the time required to perform transfer and cooling of the atomic object crystal.

[0085] Moreover, various embodiments provide multi-mode shim waveforms configured to simultaneously de-excite multiple motional modes. For example, the multi-mode shim waveforms can be configured such that the resulting potential gradient and its time evolution simultaneously de-excite a COM mode, a stretching mode, and / or other motional modes. In various embodiments, atomic objects and / or atomic object crystals are de-excited via application of shim waveforms to respective electrodes of a confinement device during and / or after a transport operation, such as a linear transport (e.g., transported along a linear confinement region or a leg of a confinement device), a split operation (e.g., when two or more atomic objects or atomic object crystals are initially disposed in one potential well and, upon completion of the split operation, are separated from each other such that the atomic objects or atomic object crystals are disposed in separate potential wells). As will be apparent to those skilled in the art based on the following description of various embodiments, various other technical advantages and improvements are provided by various embodiments.

[0086] Exemplary Quantum Computer System De-excitation of motional modes of atomic objects and / or atomic object crystals confined by atomic object confinement devices can be implemented in a wide variety of contexts and / or for a wide variety of applications. One exemplary context is quantum charge-coupled device (QCCD)-based quantum computing. FIG. 1 provides a block diagram of an exemplary quantum computer system 100. In various embodiments, quantum computer system 100 comprises computing entity 10 and quantum computer 110.

[0087] In various embodiments, quantum computer 110 comprises a controller 30, a cryogenic and / or vacuum chamber 40 enclosing an atomic object confinement device 50 thereby confining atomic objects, and one or more manipulation sources 64 (e.g., 64A, 64B, 64C). In exemplary embodiments, one or more manipulation sources 64 may include one or more lasers (e.g., optical lasers, microwave sources, and / or masers, etc.) or another manipulation source. In various embodiments, one or more manipulation sources 64 are configured to manipulate and / or cause controlled quantum state evolution of one or more atomic objects within device 50. For example, first manipulation source 64A is configured to generate and / or provide a first manipulation signal, and second manipulation source 64B is configured to generate and / or provide a second manipulation signal, where the first manipulation signal and the second manipulation signal are configured to collectively laser-cool the atomic objects confined by the atomic object confinement device, perform a quantum logic gate on the one or more atomic objects, perform a read operation on the one or more atomic objects, etc.

[0088] In various embodiments, the atomic object confinement device 50 is an ion trap, such as a surface ion trap, a Paul ion trap, etc. In various embodiments, the atomic objects are ions, atoms, neutral and / or ionic molecules, etc.

[0089] In various embodiments, the atomic objects confined by the atomic object confinement device are made into atomic object crystals. For example, the atomic object crystal includes two or more atomic objects. In an exemplary embodiment, a first component of the atomic object crystal is a coolant ion for use in a cooperative cooling scheme for atomic object crystals. In an exemplary embodiment, a second component of the atomic object crystal is a qubit ion for use as a qubit in a quantum computer. In various embodiments, the first component of the atomic object crystal and the second component of the atomic object crystal may be of the same atomic type or different atomic types, depending on the application. As used herein, the atomic type of the atomic object and / or a component of the atomic object crystal refers to the type of chemical element, atomic number, atomic / ionic species, etc., of the atomic object and / or a component of the atomic object crystal. For example, in an exemplary embodiment, the atomic object crystal includes two atomic objects having different charge-to-mass ratios.

[0090] In exemplary embodiments, one or more manipulation sources 64 each provide a manipulation signal (e.g., a laser beam, etc.) to one or more regions of atomic object confinement device 50 via a corresponding beam path 66 (e.g., 66A, 66B, 66C). In various embodiments, at least one beam path 66 comprises a modulator configured to modulate the manipulation signal being provided to device 50 via beam path 66. In various embodiments, manipulation source 64, the modulator, and / or other components of quantum computer 110 are controlled by controller 30.

[0091] In various embodiments, quantum computer 110 includes one or more magnetic field generators 70 (e.g., 70A, 70B). For example, the magnetic field generators may be internal magnetic field generators 70A disposed within cryogenic and / or vacuum chamber 40 and / or external magnetic field generators 70B disposed outside of cryogenic and / or vacuum chamber 40. In various embodiments, magnetic field generators 70 are permanent magnets, Helmholtz coils, electromagnets, etc. In various embodiments, magnetic field generators 70 are configured to generate magnetic fields in one or more regions of atomic object confinement device 50 having a particular magnitude and a particular field direction in one or more regions of atomic object confinement device 50.

[0092] In various embodiments, quantum computer 110 comprises a voltage source 80 configured to provide electrical signals to electrodes of an electrode array of the atomic object confinement device and / or to radio frequency (RF) rails and / or electrodes of the atomic object confinement device. For example, voltage source 80 may comprise arbitrary wave generators (AWGs), digital-to-analog converters (DACs), etc. configured to generate and provide various electrical signals. In exemplary embodiments, voltage source 80 is electrically coupled to corresponding potential-generating elements (e.g., electrodes of an electrode array, RF rails) of atomic object confinement device 50. For example, voltage source 80 is configured to provide periodic voltage signals to the RF rails and to provide waveform voltage signals according to one or more carrier waveforms and / or shim waveforms to electrodes of an electrode array of the atomic object confinement device. In various embodiments, voltage source 80 is controlled by respective driver controller elements of controller 30.

[0093] In various embodiments, quantum computer 110 comprises a light collection system 90 configured to collect and / or detect photons generated and / or scattered by atomic objects confined by atomic object confinement device 50. Light collection system 90 may comprise one or more optical elements (e.g., lenses, mirrors, waveguides, fiber optic cables, etc.) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal oxide semiconductor (CMOS) sensors, micro-electromechanical systems (MEMS) sensors, and / or other photodetectors sensitive to light and / or light frequencies of quantum computer 110. In various embodiments, the detectors may be in electronic communication with quantum system controller 30, such as via one or more A / D converters 725 (see FIG. 7 ).

[0094] In various embodiments, controller 30 is configured to control voltage source 80, electrical signal source, and / or drivers that control atomic object confinement device 50 and / or transport of atomic objects within atomic object confinement device 50, cryogenic system and / or vacuum system that control the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation source 64, magnetic field generator 70, and / or other systems configured to control environmental conditions (e.g., temperature, humidity, pressure, etc.) within cryogenic and / or vacuum chamber 40 and / or manipulate and / or cause controlled quantum state evolution of one or more atomic objects within atomic object confinement device 50.

[0095] In various embodiments, computing entity 10 is configured to allow a user to provide input to quantum computer 110 (e.g., via a user interface of computing entity 10) and receive, view, etc., output from quantum computer 110. Computing entity 10 may be in communication with a controller 30 of quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, computing entity 10 is capable of converting, structuring, formatting, etc., information / data, quantum computing algorithms, quantum circuits, etc., into a computing language, executable instructions, command set, etc. that can be understood and / or implemented by controller 30.

[0096] Exemplary Atomic Object Confinement Device 2 shows a first atomic object crystal 220A and a second atomic object crystal 220B confined within a portion 200 of the atomic object confinement device 50. In the illustrated embodiment, the first atomic object crystal 220A and the second atomic object crystal 220B each comprise a respective first component 222 of a first atomic type and a second component 224 of a second atomic type. In various embodiments, the first atomic type and the second atomic type are different. For example, the first component 222 of the atomic object crystal 220 may have a different charge-to-mass ratio than the second component 224 of the atomic object crystal 220. In the illustrative embodiment, the first component 222 is an ion of a first type and the second component 224 is an ion of a second, different type.

[0097] In various embodiments, atomic object confinement device 50 may be an atomic object confinement device described by U.S. Patent Application No. 63 / 235,007, filed August 19, 2021, U.S. Patent Application No. 17 / 533,587, filed November 23, 2021, and / or U.S. Patent No. 11,037,776, issued June 15, 2021, the contents of which are incorporated by reference herein in their entireties.

[0098] 2 provides a top-down schematic view of a portion 200 of an exemplary atomic object confinement device 50. The exemplary atomic object confinement device 50 may be a one-dimensional atomic object confinement device, a two-dimensional atomic object confinement device, an atomic object confinement device comprising a two-dimensional (possibly periodic) array of one-dimensional trapping segments, etc. In exemplary embodiments, the atomic object confinement device 50 is a multi-dimensional (e.g., two- or three-dimensional) surface ion trap, surface Paul trap, etc. configured to trap a plurality of atomic objects (e.g., ions, atoms, neutral and / or ionic molecules, etc.) and / or atomic object crystals therein.

[0099] In an exemplary embodiment, atomic object confinement device 50 is fabricated as part of an atomic object confinement device chip and / or as part of an atomic object confinement device package. For example, atomic object confinement device 50 may be formed on a chip with multiple wire and / or wiring attachment points such that multiple voltage signals (e.g., periodic voltage signals, waveform voltage signals) may be provided and / or applied to RF rail 210 and electrodes 204 of the array of electrodes, respectively.

[0100] In an exemplary embodiment, the atomic object confinement device 50 is at least partially defined by several radio frequency (RF) rails 210 (e.g., 210A, 210B). In various embodiments, the atomic object confinement device 50 is at least partially defined by several sequences of electrodes 202 (e.g., 202A, 202B, 202C). For example, the sequences of electrodes 202 form an array of electrodes 204. In various embodiments, various geometries, arrangements, layouts, etc. of the electrodes 204 may be used. The illustrated geometries, arrangements, layouts, etc. of the electrodes 204 are provided for illustrative purposes and, in various embodiments, will be determined and / or configured based on the intended application of the atomic object confinement device 50. In various embodiments, the top surface of the atomic object confinement device 50 has a planarized topology. For example, the top surface of each RF rail 210 of the several RF rails and the top surface of each electrode 204 of the several sequences of electrodes 202 may be substantially coplanar. In an exemplary embodiment, the surface of atomic object confinement device 50 is not planar but defines a plane from which the height of atomic objects above the "surface" of atomic object confinement device 50 is measured.

[0101] In various embodiments, two adjacent and / or substantially parallel RF rails 210 may be separated (e.g., insulated) from one another by a vertical gap 215. For example, the vertical gap 215 may define (in one or two dimensions) a confinement channel or confinement region of the atomic object confinement device 50 in which one or more atomic objects and / or atomic object crystals 220 may be confined and / or trapped at various locations within the atomic object confinement device 50. In various embodiments, the vertical gap 215 defined thereby may extend substantially parallel to adjacent RF rails 210 along the length of the corresponding portion and / or leg. In exemplary embodiments, the vertical gap 215 may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed via thermal oxidation) and / or other dielectric and / or insulating material. In various embodiments, the vertical gap has a width (e.g., distance between adjacent RF rails 210) of approximately 40 μm to 500 μm. In various embodiments, one or more sequences of electrodes 202B are disposed and / or formed within the longitudinal gap 215.

[0102] In various embodiments, atomic object confinement device 50 (and / or its legs and / or junctions) may be at least partially defined by several sequences of electrodes 202, each including a plurality of electrodes 204. In exemplary embodiments, each sequence of electrodes 202 associated with and / or at least partially defining a leg is formed to extend substantially parallel to one or more RF rails 210 that at least partially define the respective leg along at least a portion of the leg's length. For example, three sequences of electrodes 202A, 202B, 202C at least partially define portion 200 of atomic object confinement device 50 illustrated in FIG. 2 . Each of the three sequences of electrodes 202 includes a plurality of electrodes 204. In various embodiments, the several sequences of electrodes 202 that at least partially define each leg include two, three, four, and / or another number of sequences of electrodes. In an exemplary embodiment, atomic object confinement device 50 comprises a plurality of sequences 202 of electrodes, each of several sequences of electrodes at least partially defining legs and / or joints of atomic object confinement device 50. In some embodiments, each of electrodes 204 is formed on a substantially coplanar upper surface that is substantially coplanar with the upper surface of RF rail 210.

[0103] In exemplary embodiments, lateral gaps may exist between neighboring and / or adjacent electrodes 204. In exemplary embodiments, the lateral gaps may be empty sections and / or may be at least partially filled with a dielectric material to prevent electrical communication between neighboring and / or adjacent electrodes 204. In exemplary embodiments, the lateral gaps between neighboring and / or adjacent electrodes 204 may be in the range of approximately 1-10 μm.

[0104] In an exemplary embodiment, a vertical gap exists between the sequence of electrodes 202 and a neighboring and / or adjacent RF rail 210. In an exemplary embodiment, the vertical gap may be at least partially filled with a dielectric and / or insulating material to prevent electrical communication between the electrodes 204 of the sequence of electrodes 202 and the RF rail 210. In an exemplary embodiment, the vertical gap between the electrodes 204 and the neighboring and / or adjacent RF rail 210 may be in the range of approximately 1-10 μm.

[0105] In exemplary embodiments, several (e.g., pairs) of RF rails 210 may be formed between the first sequence of electrodes 202A and the third sequence of electrodes 202C, with the second sequence of TT electrodes 202B extending along the longitudinal channel between the RF rails 210. For example, each sequence of electrodes 202 of a particular leg may extend in a substantially parallel direction to the corresponding RF rail 210 along at least a portion of the length of the particular leg. In various embodiments, the top surfaces of the electrodes 204 are substantially coplanar with the top surfaces of the RF rails 210.

[0106] In various embodiments, a periodic voltage signal (e.g., a voltage signal having a radio frequency periodicity) may be applied to the RF rail 210 to generate electric and / or magnetic fields that act to maintain atomic objects confined and / or trapped within the atomic object confinement device 50. For example, the RF rail 210, which at least partially defines a particular leg, generates an electric pseudopotential that confines and / or traps atomic objects within the particular leg transversely to a corresponding one-dimensional segment and / or portion of the atomic object confinement device 50. For example, the RF rail 210, when a periodic voltage signal is applied thereto, is configured to generate a pseudopotential that confines and / or traps atomic objects along a one-dimensional segment, illustrated in FIG. 2 by dashed line 212, which represents a local pseudopotential null. For example, the radio frequency null along the leg defines a transport path (e.g., transport path 232) along the leg along which atomic objects and / or atomic object crystals 220 may be transported along at least a portion of the length of the leg.

[0107] In various embodiments, the electrodes 204 of the array of electrodes (e.g., formed by several sequences of electrodes 202) are configured to have waveform voltage signals applied to them such that the electrodes 204 generate a time-dependent potential field that causes the atomic objects and / or atomic object crystals to be transported along a transport path (e.g., along an RF null) to a corresponding portion of the atomic object confinement device 50. For example, the electric and / or magnetic fields generated at least in part by the waveform voltage signals applied to the electrodes 204 may trap at least one atomic object and / or atomic object crystal within a potential well above the top surface of the second sequence 202B of electrodes and / or longitudinal gap 215 of a respective leg and / or portion of the atomic object confinement device 50. Additionally, the waveform voltage signal applied to the electrodes 204 may cause atomic objects confined and / or trapped within the second sequence of electrodes 202B and / or the potential well above the top surface of the vertical gap 215 to follow trajectories and / or transport paths that substantially follow and / or are aligned with an RF null for the corresponding atomic object confinement device and / or portion of the atomic object confinement device.

[0108] In various embodiments, the waveform voltage signals applied to electrodes 204 and the periodic voltage signals applied to RF rails 210 are controlled by one or more connected devices (e.g., controller 30 shown in FIG. 7 ) via electrical leads. For example, controller 30 may control voltage source 80 and / or other voltage drivers to cause voltage source 80 and / or drivers to apply waveform voltage signals to electrodes 204 to generate time-dependent potentials (e.g., potentials that evolve over time) that cause atomic objects trapped and / or confined by atomic object confinement device 50 to be transported along a defined transport path and / or held in a defined position and / or undergo a de-excitation operation.

[0109] Depending on factors such as the charge on the atomic object of the at least one atomic object and / or atomic object crystal and / or the shape and / or magnitude of the combined electric and / or magnetic field (e.g., generated via application of periodic and waveform voltage signals to electrodes 204 on RF rails 210), the atomic object may settle at a particular distance (e.g., from about 20 μm to about 200 μm) above the top surface of atomic object confinement device 50 (e.g., the coplanar top surfaces of electrodes 204 and RF rails 210). To further contribute to controlling the transition of atomic objects and / or atomic object crystals along desired trajectories, atomic object confinement device 50, in various embodiments, may operate within a cryogenic and / or vacuum chamber 40 capable of cooling atomic object confinement device 50 to a temperature below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, below 5 Kelvin, etc.).

[0110] Exemplary De-Excitation Operation In various embodiments, the controller 30 can control one or more components of the quantum computer to perform de-excitation operations configured to reduce the kinetic energy of one or more atomic object crystals 220 confined by the atomic object confinement device 50. In various embodiments, the de-excitation operations can be performed at least partially in parallel with one or more transport operations and / or in a coordinated manner with one or more transport operations. In various embodiments, performing the de-excitation operations includes applying respective series of voltages to electrodes 204 of an electrode array formed by several sequences 202 of electrical power to at least partially de-excite at least one motional mode of the atomic object crystals 220. In various embodiments, performing the transport operations includes applying respective series of voltages to electrodes 204 of an electrode array formed by several sequences 202 of electrodes to transport the atomic objects and / or atomic object crystals along a transport path 232 from respective starting locations 230 within the atomic object confinement device 50 to respective destination locations 234 within the atomic object confinement device 50. As used herein, the term at least partially in parallel means at least semi- / quasi-simultaneously and / or when the performance of the operations at least partially overlap in time. For example, actions that are performed at least partially in parallel may, in an exemplary embodiment, be performed simultaneously.

[0111] In various embodiments, each series of voltages is determined algebraically using simulations and / or experimentally based on the array of electrodes of atomic object confinement device 50 and the voltages that need to be applied to those electrodes to create the desired (time-dependent) potential well. In various embodiments, controller 30 stores (e.g., in memory 710) a library of carrier and / or shim waveforms that can be used to perform various transport and / or de-excitation operations, respectively.

[0112] In various embodiments, the controller 30 may control the voltage source 80 and / or driver to apply a series of voltages to the electrodes 204 of the array of electrodes formed by the several sequences 202 of electrodes of the atomic object confinement device, causing one or more atomic objects 222, 224 and / or atomic object crystals 220 to undergo one or more transport and / or de-excitation operations. In various embodiments, the controller 30 is configured to cause the one or more transport and / or de-excitation operations to be performed at least partially in parallel. For example, the controller 30 may determine one or more carrier and / or shim waveforms to be applied, each waveform including a series of voltages to be applied to each electrode 204 and / or a subset of the electrodes of the electrode array formed by the several sequences 202 of electrodes.

[0113] In various embodiments, the series of voltages of the carrier waveform is configured to cause the atomic object and / or atomic object crystal to perform a transport operation. For example, application of the series of voltages of the carrier waveform to an array of electrodes (in a time-ordered sequence specified by the series of voltages) causes a potential well to form at a start location 230 within the atomic object containment device at a first time. The atomic object crystal 220A to be transported is located at the start location 230 at the first time. Application of the series of voltages of the carrier waveform to the array of electrodes causes the potential well to move from the start location 230 to the destination location 234 such that the potential well and the atomic object and / or atomic object crystal therein pass through the transport path 232 from the start location 230 to the destination location 234. The potential well and the atomic object 222, 224 and / or atomic object crystal 220 are located at the destination location 234 at a second time.

[0114] Similarly, the shim waveform includes a series of voltages. When the voltages of the series of voltages are applied to the electrode array in a time-ordered sequence specified by the series of voltages, a time-evolving potential gradient is formed at the location of the atomic object crystal to be de-excited. The potential gradient is configured to exert a force on the atomic object crystal (and / or its components) that counteracts the oscillatory motion of the atomic object crystal (and / or its components). In an exemplary embodiment, the potential gradient is configured to move the potential wells and the atomic objects 222, 224 and / or atomic object crystal 220 along the transport path 232 to the destination location 234. In an exemplary embodiment, the shim waveform continues to provide the potential gradient at the destination location 234 for a period of time (e.g., until a third time) after the atomic objects 222, 224 and / or atomic object crystal 220 arrive at the destination location 234. In exemplary embodiments, various laser cooling techniques may be used while the atomic objects 222, 224 and / or atomic object crystal 220 are located at the destination location 234 that at least partially overlaps with the time period during which the electric potential gradient is provided at the destination location 234 (e.g., at least a portion of the time between the second time and the third time).

[0115] 3 provides a schematic diagram of how a potential gradient generated at a location of the atomic object crystal 220 affects the coherent motion of the atomic object crystal 229 over one motion period of a COM mode oscillation. Dashed line 305 indicates the substantially constant location of the COM of the atomic object crystal 220 over time. Solid arrows indicate the respective accelerations a1 and a2 of the first and second components 222 and 224 of the atomic object crystal 220 at various points in time. Dashed arrows indicate the respective forces F1 and F2 experienced by the first and second components 222 and 224 of the atomic object crystal 220 as a result of the potential gradient. The potential gradient evolves over time according to the motional frequency of the motional mode. As a result, as can be seen in FIG. 3 , the direction and magnitude of the forces F1, F2 (which are functions of time) experienced by the components of the atomic object crystal 220 as a result of the potential gradient are configured to cancel the direction and magnitude of the accelerations a1, a2 of the components of the atomic object crystal 220 as a result of the atomic object crystal 220 oscillating in the motional mode. As a result, the forces F1, F2 experienced by the components of the atomic object crystal 220 as a result of the potential gradient dampen (e.g., reduce the amplitude of) the motional mode oscillation. This results in the atomic object crystal having lower kinetic energy (e.g., less kinetic energy). In an exemplary embodiment, the forces F1, F2 experienced by the components of the atomic object crystal 220 as a result of the potential gradient dampen (e.g., reduce the amplitude of) the motional mode oscillation, such that the atomic object crystal 220 is in its motional ground state. In another exemplary embodiment, the atomic object crystal 220 reaches its motional ground state through a combination of de-excitation and laser cooling operations.

[0116] In various embodiments, various operations may be performed at least partially in parallel. For example, Figure 2 shows a first atomic object crystal 220A.1 and a second atomic object crystal 220B.1, each located at a respective start location 230 at a first time. Figure 2 further shows that by a second time (after the first time), a first atomic object crystal 220A.2 and a second atomic object crystal 220B.2 are each located at a respective destination location 234 after passing through a respective transport path 232 between the first and second times. For example, the controller 30 may cause transport operations to be performed at least partially in parallel on the first atomic object crystal 220A and the second atomic object crystal 220B.

[0117] Additionally, the controller 30 may cause a de-excitation operation to be performed on the first atomic object between the first time and a third time (which may be the same as or later than the second time) and / or a de-excitation operation to be performed on the second atomic object between the first time and a third time. For example, the de-excitation operation may be configured to de-excite motional modes of each atomic object crystal that were excited during the respective transfer operations. In various scenarios, the motional mode excitation experienced by the first atomic object 220A may differ from the motional mode excitation experienced by the second atomic object 220B (due to, for example, differences in the respective transfer operations (e.g., whether the transfer path passes through one or more junctions of the atomic object confinement device, the length of the transfer path, differences in the axial frequencies of the respective potential wells in which the respective atomic objects are confined / trapped / transported, etc.), differences between atomic object crystals, etc.). Thus, the carrier and shim waveforms used to perform the transport and de-excitation operations are localized, so that they affect the potential at that instantaneous location of the target atomic object crystal 220, and do not affect the potential at one or more other locations within the atomic object confinement device 50.

[0118] Exemplary Calibration of Shim Waveforms for De-Excitation Operation In various embodiments, the shim waveforms are determined based at least in part on one or more parameterized mode-specific shim waveforms. In various embodiments, the respective parameters for each of the one or more parameterized mode-specific shim waveforms are determined through a calibration process. In various embodiments, the respective parameters for the one or more parameterized mode-specific shim waveforms are determined in an automated manner. In various embodiments, the parameters are specific to the atomic object confinement device 50 and its electrode array. In various embodiments, the parameters of the parameterized mode-specific shim waveforms include and / or consist of a respective motion frequency for the corresponding specific motion mode, a respective motion amplitude for the corresponding specific motion mode, and a phase for the corresponding specific motion mode. In various embodiments, the respective motion frequency, motion amplitude, and / or phase are a function of the axial frequency of the potential well trapping and / or confining the target atomic object crystal. In various embodiments, the axial frequency of the potential well trapping and / or confining the target atomic object crystal is a parameter of the parameterized mode-specific shim waveform.

[0119] 4 provides a flowchart illustrating various processes, procedures, operations, etc. for performing a calibration process 400 to determine parameters for a shim waveform of a particular mode for a particular atomic object confinement device 50. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. of calibration process 400. For example, processing device 705 (see FIG. 7 ) of controller 30 executes computer-readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. of calibration process 400.

[0120] 4, the controller 30 causes a transport operation to be performed. For example, the controller 30 causes a transport operation to be performed on the atomic object crystals 220. For example, the controller 30 may apply a series of voltages to the electrodes 204 of the electrode array of the atomic object confinement device 50 to move a potential well characterized by and / or defining an axial frequency along the transport path from a respective starting location to a respective destination location, such that each atomic object crystal is transported along the transport path from a respective starting location to a respective destination location.

[0121] In step / operation 404, the controller 30 captures one or more first crystal spectra. For example, the controller 30 causes the manipulation source to generate and / or provide a manipulation signal that is incident on the atomic object crystal. In various embodiments, the manipulation signal defines and / or is characterized by a probe frequency. For example, the manipulation signal may be a laser beam at the probe frequency. In an exemplary embodiment, the manipulation signal is incident on the atomic object crystal for a fixed exposure time. In various embodiments, the probe frequency corresponds to a Raman transition of at least one component of the atomic object crystal (e.g., one of the atomic objects). The atomic object crystal (and / or its component) may scatter at least a portion of the manipulation signal and / or absorb at least a portion of the manipulation signal and emit light as a result of absorbing the manipulation signal. This scattered and / or emitted light forms a first crystal spectrum. The light collection system 90 captures the first crystal spectrum and provides the first crystal spectrum to the controller 30.

[0122] In an exemplary embodiment, step / action 404 is performed after performance of step / action 402. In an exemplary embodiment, step / action 404 is performed at one or more times during performance of step / action 402.

[0123] In step / operation 406, the controller 30 (and / or computing entity 10) identifies and / or determines one or more sidebands in the first crystal spectrum. For example, the first crystal spectrum includes a line at the probe frequency. Due to the Doppler effect, the first crystal spectrum also includes one or more sidebands at respective frequencies that are each separated from the probe frequency by a respective motional frequency of a respective motional mode of the atomic object crystal excited by the transport operation. For example, the first crystal spectrum will include sidebands corresponding to motional modes of the atomic object crystal excited by the transport operation. These sidebands, their respective motional frequencies, and their respective sideband intensities may be determined and / or identified via various spectral analysis and / or processing techniques.

[0124] In step / operation 408, the controller 30 (and / or computing entity 10) determines and / or extracts motional amplitude information and motional frequency information from the first crystal spectrum for one or more motional modes of the atomic object crystal excited by the transfer operation. In various embodiments, the motional frequencies of the various motional modes of the atomic object crystal are known, such that identifying the motional frequencies present in the first crystal spectrum enables determining which motional modes of the atomic object crystal were excited by the transfer operation. In various embodiments, the intensity of each sideband is used to determine the motional amplitude of each motional mode. For example, the greater the intensity of each sideband, the greater the kinetic energy present in the respective motional mode. Thus, the motional frequency information and motional amplitude information determined based on the first crystal spectrum enables determining which motional modes of the atomic object crystal were excited by the transfer operation and how much kinetic energy is present in each of the motional modes of the atomic object crystal excited by the transfer operation.

[0125] In step / operation 410, controller 30 (and / or computing entity 10) determines a phase-parameterized shim waveform for which sidebands correspond to a particular motional mode detected in the first crystal spectrum. For example, the phase-parameterized shim waveform includes a series of voltages that can be shifted in time based on a phase parameter. For example, the phase-parameterized shim waveform is an oscillatory function of time and a function of the motional amplitude of the respective motional mode. For example, the amplitude of the resulting potential gradient can be

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[0126] In step / action 412, controller 30 applies a phase-parameterized shim waveform while incrementing through the phase range and capturing a second crystal spectrum. For example, controller 30 applies a phase-parameterized shim waveform while incrementing through the phase range and capturing a second crystal spectrum for a first length of time.

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[0127] In various embodiments, to capture each second crystal spectrum, the controller 30 causes the manipulation source to generate and / or provide a manipulation signal incident on the atomic object crystal. In various embodiments, the manipulation signal defines and / or is characterized by the same probe frequency used to capture the first crystal frequency. In an exemplary embodiment, the manipulation signal is incident on the atomic object crystal for a fixed exposure time. Light scattered and / or emitted by the atomic object crystal as a result of the manipulation signal being incident on the atomic object crystal is captured by the light collection system 90 and analyzed (e.g., at a particular phase

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[0128] In various embodiments, step / action 402 is still performed while step / action 412 is being performed. In various embodiments, step / action 402 is performed again and / or iteratively during the performance of step / action 412. In an exemplary embodiment, step / action 412 includes the steps of iteratively performing a transport operation and respective phases.

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[0129] In step / operation 414, one or more phases for which each corresponding second crystal spectrum includes the most significant intensity reduction and / or minimum intensity for each sideband compared to the first crystal spectrum and / or other second crystal spectra are determined and / or identified. For example, controller 30 (and / or computing entity 10) analyzes and / or processes multiple second crystal spectra to determine which of the second crystal spectra includes the minimum intensity for each sideband corresponding to each motional mode. In an exemplary embodiment, each of the second crystal spectra is compared to the first crystal spectrum to determine which of the second crystal spectra provides the greatest intensity reduction for each sideband corresponding to each motional mode.

[0130] a phase corresponding to the second crystal spectrum determined and / or identified as providing the most significant intensity reduction and / or minimum intensity for each sideband corresponding to each motional mode;

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[0131] In step / operation 416, shim waveforms for the particular mode are provided and / or stored. For example, controller 30 may store shim waveforms for the particular mode in memory 710 (e.g., as part of a waveform library, etc.). In various embodiments, the shim waveforms for the particular mode are stored in association with metadata. For example, the metadata may indicate the respective motion mode, a timestamp indicating when the shim waveform for the particular mode was generated, determined, and / or stored, one or more parameters of the shim waveform for the particular mode (e.g., motion frequency, motion amplitude, phase, axis frequency), axis frequency associated with the shim waveform for the particular mode, etc.

[0132] As noted, the shim waveforms for a particular mode are configured to de-excite a respective motional mode. However, multiple motional modes of the atomic object crystal may be excited by the transport operation. In various embodiments, the calibration process 400 and / or its various steps / operations are performed multiple times to generate and / or determine shim waveforms for multiple specific modes. For example, shim waveforms for a particular mode may be generated and / or determined for multiple motional modes. For example, the shim waveform library stored in memory 710 may be populated with shim waveforms for a particular mode corresponding to one or more motional modes of the atomic object crystal. In various embodiments, the motional mode for which a shim waveform for a particular mode is determined may be determined and / or identified based on which motional modes and / or corresponding sidebands are identified in the first crystal spectrum.

[0133] In various embodiments, the calibration process 400 may include performing a transfer operation on a plurality of atomic object crystals, capturing a first crystal spectrum for each of the plurality of atomic object crystals, determining an aggregated first crystal spectrum based on the plurality of respective first crystal spectra, determining sidebands present in the aggregated first crystal spectrum, extracting motion frequency and / or motion amplitude information for one or more sidebands present in the aggregated first crystal spectrum, and applying phase-parameterized shim waveforms to the plurality of atomic object crystals and determining one or more specific mode shim waveforms for each sideband and / or corresponding motion mode present in the aggregated first crystal spectrum based on the aggregated second crystal spectrum determined therefrom.

[0134] In various embodiments, calibration process 400 may be performed multiple times for transport operations corresponding to different axial frequencies so that the axial frequency dependence of the shim waveforms for a particular mode may be determined, and / or so that shim waveforms for multiple particular modes may be determined using shim waveforms for each particular mode corresponding to a respective axial frequency. In various embodiments, the shim waveforms for the particular modes that are determined are specific to atomic object confinement device 50.

[0135] Exemplary Implementation of De-Excitation Operation In various embodiments, the de-excitation operation may be performed while a quantum computation is being performed, a quantum program / circuit is being executed, etc. For example, the de-excitation operation may be performed at least partially in parallel with and / or in a coordinated manner with a transport operation while a quantum computation is being performed, a quantum program / circuit is being executed, etc. In various embodiments, the atomic object confinement device 50 confines multiple atomic object crystals, and multiple transport and / or de-excitation operations are performed at least partially in parallel (e.g., at different locations within the atomic object confinement device 50 (e.g., different respective starting and / or destination locations)). In various embodiments, a multi-mode de-excitation operation is performed.

[0136] FIG. 5 provides a flowchart illustrating various processes, procedures, operations, etc. that may be implemented by controller 30 to perform one or more de-excitation operations at least partially in parallel. In various embodiments, one or more de-excitation operations are performed at least partially in parallel and / or in coordination with respective transport operations. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. illustrated in FIG. 5. For example, processing device 705 of controller 30 may execute computer-readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. illustrated in FIG. 5.

[0137] Beginning at step / operation 502, one or more transfer operations to be performed are identified. For example, controller 30 identifies one or more transfer operations to be performed at least partially in parallel. In various embodiments, each of the one or more transfer operations corresponds to moving a respective atomic object crystal from a respective start location to a respective destination location along a respective transport path of atomic object confinement device 50. In various embodiments, each transfer operation is associated with a respective axial frequency. In various embodiments, the respective axial frequencies are the same or different from one another.

[0138] In step / operation 504, controller 30 determines, identifies, and / or accesses respective carrier waveforms for one or more transfer operations (e.g., from a waveform library stored in memory 710). In various embodiments, the respective carrier waveforms are determined, identified, and / or accessed based on the respective axial frequencies for each transfer operation. In an exemplary embodiment, for example, the respective carrier waveforms for each of the one or more transfer operations are determined, identified, and / or accessed based on the respective start locations of the transfer operations, the respective destination locations of the transfer operations, the respective transfer paths of the transfer operations, the respective axial frequencies of the transfer operations, etc. For example, the carrier waveforms may include one or more localization parameters that control the location of the resulting potential well. The localization parameters may be set based on the start location, destination location, and / or transfer path corresponding to the transfer operation. For example, in an exemplary embodiment, the carrier waveform is configured such that the resulting potential well is localized at a time-dependent location corresponding to the transfer path that causes the atomic object crystal to pass through the transfer path.

[0139] In step / operation 506, controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) shim waveforms for each specific mode for one or more motion modes for at least one of the one or more transfer operations. In an exemplary embodiment, controller 30 determines, identifies, and / or accesses shim waveforms for each specific mode for one or more motion modes for each respective transfer operation of the one or more transfer operations. For example, in an exemplary embodiment, a shim waveform for each specific mode for each primary motion mode expected to be excited for each transfer operation of the one or more transfer operations may be determined, identified, and / or accessed. In an exemplary embodiment, a shim waveform for each specific mode for two or more motion modes expected to be excited for each transfer operation of the one or more transfer operations may be determined, identified, and / or accessed. For example, a shim waveform for each specific mode corresponding to a COM and / or stretching mode of each atomic object crystal may be determined, identified, and / or accessed.

[0140] In an exemplary embodiment, the result of the calibration process is a storage of multi-mode waveforms generated and / or determined by adding and / or aggregating together specific mode shim waveforms for two or more different motion modes. In such an embodiment, each multi-mode shim waveform may be determined, identified, or accessed for each of the one or more transfer operations. For example, the multi-mode shim waveform may be an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motion mode of each atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motion mode of each atomic object crystal. The first coherent motion mode is characterized by a first motion frequency, and the second coherent motion mode is characterized by a second motion frequency. The first motion frequency and the second motion frequency are different. For example, in an exemplary embodiment, the first motion frequency and the second motion frequency may differ by a factor of at least 1.5. For example, in an exemplary embodiment, the motion frequency of the COM mode of the atomic object crystal is about 1 MHz, and the motion frequency of the stretching mode of the atomic object crystal is about 1.8 MHz. As will be appreciated, the motion frequency of the motion modes of the atomic object crystal will depend on the components of the atomic object crystal and the environment the atomic object crystal encounters (e.g., the axial frequency of the potential well in which the atomic object crystal is confined, etc.).

[0141] In exemplary embodiments, a shim waveform of a particular mode (or a multi-mode shim waveform) corresponding to a transfer operation is determined, identified, and / or accessed based on a start location of the transfer operation, a destination location of the transfer operation, a transfer path of the transfer operation, an axial frequency of the transfer operation, etc. For example, a shim waveform of a particular mode (or a multi-mode shim waveform) may include one or more localization parameters that control the location of the resulting potential gradient. The localization parameters may be set based on the start location, destination location, and / or transfer path of the corresponding transfer operation. For example, in exemplary embodiments, when a de-excitation operation is performed at least partially in parallel with the transfer operation, the shim waveform is configured to localize the resulting potential gradient at the instantaneous location of the atomic object crystal as the atomic object crystal passes through the transfer path. In various embodiments, the parameters of the shim waveform are set based on the axial frequency of the transfer operation (e.g., the motion amplitude, motion frequency, and / or phase of the shim waveform may be a function of the axial frequency), and / or a shim waveform corresponding to a particular axial frequency may be selected for performing a transfer operation using a particular axial frequency.

[0142] In step / operation 508, controller 30 determines an applied waveform based on the shim waveform for each particular mode and the respective carrier waveform. For example, the shim waveform for each particular mode determined, identified, and / or accessed in step / operation 506 and the carrier waveform determined, identified, and / or accessed in step / operation 504 are aggregated and / or added together to determine and / or generate an applied waveform. The applied waveform is a series of voltages including respective voltages to be applied to a subset and / or all of the electrodes 204 of the electrode array of atomic object confinement device 50 over a series of time steps (e.g., between a first time, a second time, and / or a third time). The series of voltages of the applied waveform, when applied to the electrodes 204 of the electrode array of atomic object confinement device 50, are configured to generate respective potential wells each configured to transport each atomic object crystal along a respective transport path according to a respective transport operation, and to generate respective potential gradients each configured to de-excite one or more motional modes of each atomic object crystal. Each of the respective potential wells and respective potential gradients is localized at a location corresponding to a respective atomic object. For example, a first potential gradient configured to de-excite at least one motional mode of a first atomic object is configured to de-excite at least one motional mode of the first atomic object but not affect (e.g., excite or de-excite) any motional modes of a second atomic object. In various embodiments, the applied waveform is determined by summing together voltages to the first electrode from each of the carrier waveforms and each of the shim waveforms for a particular mode (or multi-mode shim waveform) over each series of time steps and over corresponding time steps relative to the first electrode 204.

[0143] In step / operation 510, controller 30 controls voltage source 80 to generate and provide waveform voltage signals according to a series of voltages of an applied waveform, such that the waveform voltage signals are applied to electrodes 204 of an array of electrodes formed by several sequences of electrodes 202 of atomic object confinement device 50. In various embodiments, the application of the waveform voltage signals to electrodes 204, generated according to the series of voltages of the waveform applied from a first time to a second and / or third time, causes one or more transport operations to be performed, and causes de-excitation operations corresponding to one or more motion modes for at least one of the one or more transport operations to be performed.

[0144] In various embodiments, a cooling operation including laser cooling may be performed (e.g., between the second and third times) to further cool each atomic object crystal and / or to remove heat and / or kinetic / dynamic energy absorbed by each atomic object crystal during each transport operation.

[0145] As will be appreciated, the processes, steps, and / or operations illustrated in FIG. 5 may be repeated multiple times during the performance of a quantum computation and / or execution of a quantum program / circuit.

[0146] Exemplary implementation of at least partially parallel de-excitation operations with reduced parasitic crosstalk therebetween As explained above, in various embodiments, the atomic object confinement device 50 is formed on a chip or the like with electrical leads and / or connections. The leads and / or connections allow a voltage signal (periodic, waveform, and / or other voltage signal) generated by the voltage source 80 to be applied to electrodes (e.g., RF rail 210, electrodes 204) of the atomic object confinement device 50. In various scenarios, when de-excitation operations are performed in an at least partially parallel manner at multiple locations within the atomic object confinement device 50, parasitic coupling in the wires and / or wires between different electrodes 204 may allow a waveform voltage signal applied to an electrode to appear on another electrode, thereby partially canceling the localization of the de-excitation force. For example, parasitic crosstalk between the wires and / or wires configured to provide respective waveform voltage signals to different electrodes affects the ability to localize the resulting potential gradient at a desired location (e.g., at the location of each atomic object crystal). This may result in the excitation of motional modes of atomic object crystals other than the atomic object crystals targeted by the de-excitation operation. Therefore, a technical challenge exists as to how to perform de-excitation operations in an at least partially parallel manner at different locations within an atomic object confinement device without unintentionally exciting motional modes of other atomic object crystals.

[0147] Various embodiments provide technical solutions to these technical challenges, for example, the shaft frequencies of the conveying operations corresponding to each de-excitation operation can be selected, assigned, etc., such that the shaft frequencies are spaced apart such that the waveform voltage signals are less likely to couple.

[0148] FIG. 6 provides a flowchart illustrating various processes, procedures, operations, etc. that may be implemented by controller 30 to perform two or more de-excitation operations at least partially in parallel with reduced parasitic crosstalk. In various embodiments, the two or more de-excitation operations are performed at least partially in parallel and / or in coordination with respective transport operations. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. illustrated in FIG. 6. For example, processing device 705 of controller 30 executes computer-readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. illustrated in FIG. 6.

[0149] Beginning at step / action 602, two or more transfer operations to be performed are identified. For example, controller 30 identifies two or more transfer operations to be performed at least partially in parallel. In various embodiments, each of the two or more transfer operations corresponds to moving a respective atomic object crystal along a respective transfer path within atomic object confinement device 50 from a respective start location to a respective destination location.

[0150] In step / operation 604, a respective shaft frequency is determined and / or assigned to each of the two or more conveying operations. For example, the controller 30 determines a respective shaft frequency and / or assigns a respective shaft frequency to each of the two or more conveying operations. In various embodiments, the respective shaft frequencies are spaced apart from one another. For example, the respective shaft frequencies include a first shaft frequency and a second shaft frequency separated from one another by a frequency difference in the range of 0.05 to 10 MHz. In an exemplary embodiment, for the first shaft frequency of the respective shaft frequencies, none of the other respective shaft frequencies is within a minimum frequency difference of the first shaft frequency. In an exemplary embodiment, the minimum frequency difference is in the range of 0.05 to 10 MHz. In an exemplary embodiment, the minimum frequency difference is approximately 100 kHz. In an exemplary embodiment, the frequency difference is in the range of 50 kHz to 1 MHz.

[0151] In step / operation 606, controller 30 determines, identifies, and / or accesses respective carrier waveforms for one or more transfer operations (e.g., from a waveform library stored in memory 710). In various embodiments, the respective carrier waveforms are determined, identified, and / or accessed based on the respective axial frequencies determined and / or assigned for each transfer operation. In an exemplary embodiment, the respective carrier waveforms for each of the one or more transfer operations are determined, identified, and / or accessed based on, for example, the respective start locations of the transfer operations, the respective destination locations of the transfer operations, the respective transfer paths of the transfer operations, the determined and / or assigned respective axial frequencies of the transfer operations, etc. For example, the carrier waveforms may include one or more localization parameters that control the location of the resulting potential well. The localization parameters may be set based on the start location, destination location, and / or transfer path of the corresponding transfer operation. For example, in an exemplary embodiment, the carrier waveforms are configured such that the resulting potential wells are localized at time-dependent locations corresponding to the transfer paths that cause the atomic object crystal to pass through the transfer path.

[0152] In step / operation 608, controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) shim waveforms for each specific mode for one or more motion modes for at least one of the one or more transfer operations. In an exemplary embodiment, controller 30 determines, identifies, and / or accesses shim waveforms for each specific mode for one or more motion modes for each respective transfer operation of the one or more transfer operations. For example, in an exemplary embodiment, a shim waveform for each specific mode for each primary motion mode expected to be excited for each transfer operation of the one or more transfer operations may be determined, identified, and / or accessed. In an exemplary embodiment, a shim waveform for each specific mode for two or more motion modes expected to be excited for each transfer operation of the one or more transfer operations may be determined, identified, and / or accessed. For example, a shim waveform for each specific mode corresponding to a COM and / or stretching mode of each atomic object crystal may be determined, identified, and / or accessed.

[0153] In an exemplary embodiment, the result of the calibration process is a storage of multi-mode waveforms generated and / or determined by adding and / or aggregating together specific mode shim waveforms for two or more different motion modes. In such an embodiment, each multi-mode shim waveform may be determined, identified, and / or accessed for each of the one or more transfer operations. For example, the multi-mode shim waveform may be an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motion mode of each atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motion mode of each atomic object crystal. The first coherent motion mode is characterized by a first motion frequency, and the second coherent motion mode is characterized by a second motion frequency. The first motion frequency and the second motion frequency are different. For example, in an exemplary embodiment, the first motion frequency and the second motion frequency may differ by a factor of at least 1.5.

[0154] In exemplary embodiments, a shim waveform of a particular mode (or a multi-mode shim waveform) corresponding to a transfer operation is determined, identified, and / or accessed based on a start location of the transfer operation, a destination location of the transfer operation, a transfer path of the transfer operation, a determined and / or assigned axis frequency of the transfer operation, etc. For example, a shim waveform of a particular mode (or a multi-mode shim waveform) may include one or more localization parameters that control the location of the resulting potential gradient. The localization parameters may be set based on the start location, destination location, and / or transfer path of the corresponding transfer operation. For example, in exemplary embodiments, when a de-excitation operation is performed at least partially concurrently with the transfer operation, the shim waveform is configured such that the resulting potential gradient is localized at the instantaneous location of the atomic object crystal as the atomic object crystal passes through the transfer path. In various embodiments, parameters of the shim waveform are set based on the determined and / or assigned shaft frequency of the conveying operation (e.g., the motion amplitude, motion frequency, and / or phase of the shim waveform are functions of the shaft frequency), and / or a shim waveform corresponding to a particular determined and / or assigned shaft frequency is selected for performing the conveying operation using the particular determined and / or assigned shaft frequency.

[0155] In step / operation 610, controller 30 determines an applied waveform based on the shim waveform for each particular mode and the respective carrier waveform. For example, the shim waveform for each particular mode determined, identified, and / or accessed in step / operation 608 and the carrier waveform determined, identified, and / or accessed in step / operation 606 are aggregated and / or added together to determine and / or generate an applied waveform. The applied waveform is a series of voltages including respective voltages to be applied to a subset and / or all of the electrodes 204 of the electrode array of atomic object confinement device 50 for each of a series of time steps (e.g., between a first time, a second time, and / or a third time). The series of voltages of the applied waveform, when applied to the electrodes 204 of the electrode array of atomic object confinement device 50, are configured to generate respective potential wells, each configured to transport each atomic object crystal along a respective transport path according to a respective transport operation, and to generate respective potential gradients, each configured to de-excite one or more motional modes of each atomic object crystal.

[0156] Each of the respective potential wells and respective potential gradients is localized at a location corresponding to a respective atomic object. For example, a first potential gradient configured to de-excite at least one motional mode of a first atomic object is configured to de-excite at least one motional mode of the first atomic object but not affect (e.g., excite or de-excite) any motional modes of a second atomic object. In various embodiments, the applied waveform is determined by summing together voltages to the first electrode from each of the carrier waveforms and each of the shim waveforms for a particular mode (or multi-mode shim waveform) over each series of time steps and over corresponding time steps relative to the first electrode 204.

[0157] In step / operation 612, controller 30 controls voltage source 80 to generate and provide waveform voltage signals according to a series of voltages of an applied waveform, such that the waveform voltage signals are applied to electrodes 204 of an array of electrodes formed by several sequences of electrodes 202 of atomic object confinement device 50. In various embodiments, the application of the waveform voltage signals to electrodes 204, generated according to the series of voltages of the waveform applied from a first time to a second and / or third time, causes one or more transport operations to be performed, and causes de-excitation operations corresponding to one or more motion modes for at least one of the one or more transport operations to be performed.

[0158] Moreover, the difference in the respective axial frequencies associated with the two or more transport operations reduces parasitic crosstalk between the wiring and / or conductors configured to provide waveform voltage signals to the electrodes 204, thereby preserving localization of the potential wells and / or potential gradients. For example, the difference in the respective axial frequencies associated with the two or more transport operations reduces parasitic crosstalk between the wiring and / or conductors configured to provide waveform voltage signals to the electrodes 204, isolating the effects of the transport operations and de-excitation operations on the respective target atomic object crystals.

[0159] In various embodiments, during each transport operation, a cooling operation including laser cooling may also be performed (e.g., between the second and third times) to further cool each atomic object crystal and / or to remove heat and / or kinetic / dynamic energy absorbed by each atomic object crystal.

[0160] As will be appreciated, the processes, steps, and / or operations illustrated in FIG. 6 may be repeated multiple times during the performance of a quantum computation and / or execution of a quantum program / circuit.

[0161] Technical Advantages In various scenarios, atomic objects and / or atomic object crystals may be transported from their respective starting locations within an atomic object confinement device to their respective destination locations within the atomic object confinement device during the conduct of an experiment, controlled quantum state evolution, quantum computation, etc. During such transport operations, the atomic objects and / or atomic object crystals are excited such that they are no longer in their kinetic ground state. Conventionally, laser cooling is used to reduce the kinetic energy of the atomic objects and / or their components. However, laser cooling is a slow process compared to various other processes performed during the conduct of an experiment, controlled quantum state evolution, quantum computation, etc. For example, the time required to perform the transport and cooling operations is conventionally considered a limiting factor in the computational speed of a QCCD quantum computer. Moreover, the significant amount of time required to cool the atomic object crystal after the transport operation is performed limits the depth of the quantum circuit and / or quantum program that can be implemented by a QCCD quantum computer and can contribute to memory errors. Therefore, a technical challenge exists as to how to quickly and efficiently reduce the kinetic energy of the atomic object crystal and de-excite the kinetic state of the atomic object crystal.

[0162] An atomic object crystal containing two atomic objects (e.g., a coolant ion and a qubit ion) may oscillate in a center-of-mass mode, in which the two atomic objects oscillate in such a way that the distance between them remains substantially constant, such that the center of mass (COM) of the atomic object crystal oscillates. An atomic object crystal containing two atomic objects may also oscillate in a stretching mode, in which the distance between the two atomic objects periodically stretches and contracts. Additionally, the atomic object crystal may oscillate in a superposition of a COM mode and / or a stretching mode, which may have different motional frequencies, motional amplitudes, and / or phases. Additional motional modes and their superpositions are also possible, particularly when the charge-to-mass ratios of the components of the atomic object crystal are different. Therefore, de-excitation of these superpositions of motional modes presents a technical challenge.

[0163] An additional technical challenge is presented when the atomic object crystal to be de-excited is one of multiple atomic object crystals confined by an atomic object confinement device. In such a scenario, it is desirable to de-excite the particular atomic object crystal without simultaneously exciting any of the other atomic object crystals that are also confined by the atomic object confinement device. It may also be desirable to perform two or more de-excitation operations at least partially in parallel (e.g., semi-simultaneously and / or with the performance of the de-excitation operations at least partially overlapping in time). Thus, a technical challenge exists as to how to localize the effects of the de-excitation operations.

[0164] Various embodiments provide technical solutions to these and other technical challenges related to de-exciting coherent motional modes of an atomic object crystal confined by an atomic object confinement device. For example, various embodiments provide mode-specific and / or multi-mode shim waveforms. The shim waveform includes a series of voltages. The series of voltages includes voltages to be applied to each electrode and / or a subset of electrodes of an electrode array of the atomic object confinement device at multiple time steps. When voltages of the series of voltages are applied to the electrode array of the atomic object confinement device in a time-ordered sequence specified by the series of voltages, a time-evolving potential gradient is formed at a location of the atomic object crystal to be de-excited. The potential gradient is configured to impart a force to the atomic object crystal (and / or its components) that counteracts the oscillatory motion of the atomic object crystal (and / or its components).

[0165] In various embodiments, the mode-specific and / or multi-mode shim waveforms are configured to localize the resulting potential gradient at a specific location within the atomic object confinement device. For example, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient is localized at the location of the target atomic object crystal without affecting other nearby atomic object crystals and / or other atomic object crystals within the atomic object confinement device. In various embodiments, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient may be non-constant, such that a de-excitation operation may be performed on the atomic object crystal at least partially in parallel with the performance of a transfer operation on the atomic object crystal (e.g., semi-simultaneously and / or when the performance of the operations at least partially overlaps in time). For example, a de-excitation operation may be performed on the atomic object crystal while the atomic object crystal is being transferred to further reduce the time required to perform transfer and cooling of the atomic object crystal.

[0166] Moreover, various embodiments provide multi-mode shim waveforms configured to simultaneously de-excite multiple motional modes. For example, the multi-mode shim waveforms can be configured such that the resulting potential gradients and their time evolution simultaneously de-excite COM modes, stretch modes, and / or other motional modes.

[0167] Additionally, when multiple de-excitation operations are performed in an at least partially parallel manner at different locations within the atomic object confinement device, parasitic crosstalk between the conductors and / or wiring configured to provide the respective waveform voltage signals to the electrodes 204 of the atomic object confinement device may degrade the localization of the effect of the de-excitation operations, which may unintentionally excite motional modes within the atomic object crystal, causing further technical challenges.

[0168] Various embodiments are configured to decouple parasitic coupling between the conductors and / or wires configured to provide the respective waveform voltage signals to the electrodes 204 such that crosstalk therebetween is reduced and / or eliminated. For example, the axial frequencies of the corresponding conveying motions are determined and / or assigned in a spaced apart manner, thereby reducing parasitic coupling between the conductors and / or wires configured to provide the respective waveform voltage signals to the electrodes 204 caused by oscillating the waveform voltage signals corresponding to the respective shim waveforms.

[0169] Exemplary Controller In various embodiments, quantum computer 110 comprises a controller 30 configured to control various elements of quantum computer 110. In various embodiments, controller 30 may be configured to cause quantum computer 110 to perform various operations (e.g., computational operations such as gating operations, cooling operations, transport operations, qubit interaction operations, qubit measurement operations, leakage suppression / transduction operations, etc.). For example, controller 30 may be configured to perform one or more transport operations, one or more de-excitation operations, etc. For example, controller 30 may be configured to control cryogenic and / or vacuum chamber 40, manipulation source 64, a voltage source configured to apply a voltage signal (e.g., a periodic voltage signal, a waveform voltage signal) to electrodes (e.g., RF rail 210, electrode 204) of atomic object confinement device 50, magnetic field generator 70, and / or a cryogenic system and / or vacuum system that controls environmental conditions (e.g., temperature, humidity, pressure, etc.) within cryogenic and / or vacuum chamber 40 and / or controls the temperature and pressure within a system configured to manipulate and / or cause controlled quantum state evolution of one or more atomic objects within atomic object confinement device 50.

[0170] 7, in various embodiments, controller 30 may comprise various controller elements, including a processing element 705, a memory 710, a driver controller element 715, a communication interface 720, an analog-to-digital conversion element 725, etc. For example, processing element 705 may comprise a programmable logic device (PLD), a microprocessor, a coprocessing entity, an application-specific instruction-set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, other processing devices and / or circuits, etc., and / or a controller. The term circuit may refer to an entity hardware embodiment or a combination of hardware and a computer program product. In an exemplary embodiment, processing element 705 of controller 30 comprises and / or is in communication with a clock.

[0171] For example, memory 710 may comprise non-transitory memory such as volatile and / or non-volatile memory storage devices, such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, etc. In various embodiments, memory 710 may store qubit records corresponding to qubits of a quantum computer (e.g., in a qubit record data store, a qubit record database, a qubit record table, etc.), calibration tables, executable cues, computer program code (e.g., in one or more computer languages, a designated controller language, etc.), etc. In an exemplary embodiment, execution of at least a portion of the computer program code stored in memory 710 (e.g., by processing element 705) causes controller 30 to perform one or more steps, operations, processes, procedures, etc. described herein.

[0172] In various embodiments, driver controller element 715 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, driver controller element 715 may comprise a driver and / or a driver controller. For example, a driver controller may be configured to cause one or more corresponding drivers to operate according to executable instructions, commands, etc. scheduled and executed by controller 30 (e.g., by processing element 705). In various embodiments, driver controller element 715 may enable controller 30 to operate and / or control one or more manipulation sources 64, control one or more magnetic field generators 70, control one or more voltage sources 80 and / or drivers, operate a vacuum and / or cryogenic system, etc. In various embodiments, a driver may be a laser driver, a vacuum component driver, a voltage source (e.g., an AC voltage source, arbitrary waveform generators (AWGs), direct digital synthesizers (DDSs), etc.), a cryogenic and / or vacuum system component driver, etc. In various embodiments, controller 30 comprises means for communicating and / or receiving signals from one or more optical receiver components, such as a camera, a MEMs camera, a CCD camera, a photodiode, a photomultiplier tube, etc. For example, controller 30 may comprise one or more analog-to-digital conversion elements 725 configured to receive signals from one or more optical receiver components, calibration sensors, etc. For example, controller 30 may receive, via analog-to-digital conversion elements 725, measurements corresponding to conditions in particular regions and / or portions of atomic object confinement device 50 and / or corresponding to various atomic objects.

[0173] In various embodiments, controller 30 may comprise a communications interface 720 for interfacing and / or communicating with computing entity 10. For example, controller 30 may comprise a communications interface 720 for receiving executable instructions, command sets, etc. from computing entity 10 and for providing quantum computer 110 with outputs received (e.g., from a light collection system or other measurement system) and / or processed results of the outputs to computing entity 10. In various embodiments, computing entity 10 and controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0174] Exemplary Computing Entity 8 provides an illustrative schematic diagram of an exemplary computing entity 10 that may be used with embodiments of the present invention. In various embodiments, computing entity 10 is configured to allow a user to provide input to quantum computer 110 (e.g., via a user interface of computing entity 10) and receive, display, analyze, etc., output from quantum computer 110. For example, a user may operate computing entity 10 to generate and / or program quantum algorithms and / or quantum circuits that may be provided such that controller 30 receives the quantum algorithms and / or quantum circuits and causes quantum computer 110 to implement the quantum algorithms and / or quantum circuits.

[0175] 8, computing entity 10 may include an antenna 812, a transmitter 814 (e.g., wireless), a receiver 806 (e.g., wireless), and a processing device and / or element 808 that provides signals to and receives signals from transmitter 814 and receiver 806, respectively. The signals provided to and received from transmitter 814 and receiver 806, respectively, may include signaling information / data in accordance with an air interface standard of an applicable interface system for communicating with various entities, such as controller 30, other computing entities 10, etc. In this regard, computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol. Similarly, computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as general packet radio service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDAM), Global System for Mobile Communications (GSM), or any other standard.Mobile Communications, Enhanced Data rates for GSM Evolution (EDGE), Time Division-Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed Packet Access (HSPA), High-Speed Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra Wideband (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) The computing entity 10 may be configured to communicate over the wireless external communications network using any of a variety of protocols, such as the Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), and / or any other wireless protocol.Such protocols and standards may be used to communicate using the following protocols and standards: HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), HyperText Markup Language (HTML), and the like.

[0176] Through these communication standards and protocols, computing entity 10 may communicate with various other entities using concepts such as Unstructured Supplementary Service information / data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM dialer), etc. Computing entity 10 may also download modifications, add-ons, and updates to its firmware, software (including, e.g., executable instructions, applications, program modules), and operating system, for example.

[0177] Computing entity 10 may comprise user interface devices comprising one or more user input / output interfaces (e.g., a display 816 coupled to processing device and / or element 808 and a touchscreen and / or a speaker / speaker driver, a keyboard, a mouse, and / or a microphone coupled to processing device and / or element 808). For example, a user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein executing on and / or accessible on computing entity 10 to cause a display or audible presentation of information / data and to interact therewith via one or more user input interfaces. A user input interface may comprise any of several devices that enable computing entity 10 to receive data, such as a keypad 818 (hard or soft), a touch display, a voice / audio or kinetic interface, a scanner, a reader, or other input device. In embodiments including a keyboard 818, the keypad 818 may include (or may display) a traditional numeric keypad (0-9) and related keys (#, *), and other keys used to operate computing entity 10, and may include a set of keys that can be activated to provide a full set of alphabetic or alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain functions, such as, for example, a screen saver and / or sleep mode. Through such input, computing entity 10 may collect information / data, user interaction / input, etc.

[0178] Computing entity 10 may include volatile storage or memory 822 and / or non-volatile storage or memory 824, which may be embedded and / or removable. For example, non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, etc. Volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, etc. Volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, etc. for implementing the functionality of computing entity 10.

[0179] conclusion Many modifications and other embodiments of the inventions described herein will come to mind to one skilled in the art to which these inventions pertain having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the inventions are not limited to the particular embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense and not for purposes of limitation. [Explanation of symbols]

[0180] 10 Computing Entities 20 Wired or Wireless Network 30 Controller, Quantum System Controller 40 Cryogenic and / or Vacuum Tubes 50 Atomic object confinement device, device 64 Operation source 64A Control source, first control source 64B Control source, second control source 64C operation source 66 Beam Path 66A Beam Path 66B Beam Path 66C Beam Path 70 Magnetic field generator 70A magnetic field generator, internal magnetic field generator 70B Magnetic field generator, external magnetic field generator 80 Voltage Source 90 Light Concentration System 100 Quantum Computer Systems 110 Quantum Computer 200 part 202 Several sequences of electrodes, Three sequences of electrodes, Multiple sequences of electrodes, Sequence of electrodes, Each sequence of electrodes 202A Electrode Sequence, First Sequence of Electrodes 202B Sequence of electrodes, One or more sequences of electrodes, Second sequence of TT electrodes, Second sequence of electrodes 202C Electrode Sequence, Third Sequence of Electrodes 204 Electrode 210 RF Rail, Radio Frequency (RF) Rail 210A Radio Frequency (RF) Rail 210B Radio Frequency (RF) Rail 212 dashed line 215 Vertical gap 220 Atomic Object Crystal 220A First Atomic Object Crystal 220A.1 First atomic object crystal 220A.2 First atomic object crystal 220B Second Atomic Object Crystal 220B.1 Second Atomic Object Crystal 220B.2 Second Atomic Object Crystal 222 First component, atomic object 224 Second component, atomic object 230 Starting Location 232 Transport Route 234 Destination Location 400 Calibration Process 705 Processing devices, processing elements 710 memory 715 Driver Controller Elements 720 Communication Interface 725 A / D converter, analog-to-digital conversion element 806 receiver 808 Processing Devices and / or Elements 812 Antenna 814 Transmitter 816 Display 818 keypad 822 Volatile Memory 824 Non-volatile memory

Claims

1. 1. A method for calibrating parameters of a shim waveform for a particular atomic object confinement device, comprising: causing the particular atomic object confinement device to perform a transfer operation on at least one atomic object crystal confined by the atomic object confinement device; capturing a first crystal spectrum for the atomic object crystal; identifying one or more sidebands in the first crystal spectrum; determining a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum; determining a phase-parameterized shim waveform based on the respective motion frequencies and the respective motion amplitudes, the phase-parameterized shim waveform being a function of phase; applying the phase-parameterized shim waveform to the atomic object crystal while the phase parameters of the phase-parameterized shim waveform are incremented across a phase range, and capturing one or more second crystal spectra; determining a phase within the phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra; determining a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase; providing or storing said shim waveform for use when performing a quantum operation using said particular atomic object confinement device.

2. A system comprising: an atomic object confinement device configured to confine one or more atomic object crystals within the atomic object confinement device; a controller comprising at least one processor and a memory storing computer-executable instructions; The computer-executable instructions, when executed by the at least one processor, cause the controller to at least: identifying one or more transport operations to be performed at least partially in parallel, each transfer operation of the one or more transfer operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location, the starting location and the destination location being locations within the atomic object confinement device; determining a respective shim waveform for at least one of the one or more transport operations; determining a respective carrier waveform for each transport operation; determining an applied waveform based on an aggregation of the respective shim waveforms and the respective carrier waveforms; and controlling one or more voltage sources to apply waveform voltage signals according to said applied waveform to electrodes of an array of electrodes of said atomic object confinement device; applying the applied waveform to the array of electrodes; performing each of the one or more transfer operations on the respective atomic object crystal; de-exciting at least one coherent motional mode of said respective atomic object crystal corresponding to at least one of said one or more transport operations.

3. Each of the shim waveforms is an aggregation of shim waveforms of two or more specific modes; The system of claim 2 , wherein each of the two or more particular mode shim waveforms corresponds to a different coherent mode of motion of the respective atomic object crystal.

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