Light-emitting display device
The use of an oxide semiconductor layer extending beyond the first wiring region in a thin-film transistor configuration enhances the aperture ratio, addressing the limitations of amorphous and crystalline silicon transistors and enabling high-definition light-emitting displays.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2025-11-13
- Publication Date
- 2026-06-02
AI Technical Summary
Existing thin film transistors using amorphous silicon have low field-effect mobility, while those using crystalline silicon require complex crystallization processes and are not suitable for large-area substrates, and there is a demand for light-emitting display devices with improved aperture ratio and higher definition.
A light-emitting display device with a pixel configuration that includes a thin-film transistor using an oxide semiconductor, where the oxide semiconductor layer extends beyond the first wiring region and overlaps with a light-emitting element, connected to both a scan line and a signal line, enhancing the aperture ratio.
The configuration improves the aperture ratio, enabling high-definition displays by reducing the area occupied by non-light-transmitting materials and increasing the light-transmitting area.
Smart Images

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