Light-emitting display device

The use of an oxide semiconductor layer extending beyond the first wiring region in a thin-film transistor configuration enhances the aperture ratio, addressing the limitations of amorphous and crystalline silicon transistors and enabling high-definition light-emitting displays.

JP7869394B2Active Publication Date: 2026-06-02SEMICON ENERGY LAB CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2025-11-13
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

Existing thin film transistors using amorphous silicon have low field-effect mobility, while those using crystalline silicon require complex crystallization processes and are not suitable for large-area substrates, and there is a demand for light-emitting display devices with improved aperture ratio and higher definition.

Method used

A light-emitting display device with a pixel configuration that includes a thin-film transistor using an oxide semiconductor, where the oxide semiconductor layer extends beyond the first wiring region and overlaps with a light-emitting element, connected to both a scan line and a signal line, enhancing the aperture ratio.

Benefits of technology

The configuration improves the aperture ratio, enabling high-definition displays by reducing the area occupied by non-light-transmitting materials and increasing the light-transmitting area.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

Improvement of aperture ratio in pixels having thin film transistors using oxide semiconductors An object of the present invention is to provide a light-emitting display device that can achieve this. The pixel includes a plurality of pixels each having a thin film transistor and a light emitting element. The thin film transistor is electrically connected to a first wiring that functions as a wiring. an oxide semiconductor layer provided on the line via a gate insulating film, The light emitting element and the oxide semiconductor layer are overlapped with each other. It can be folded up.
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