Majority logic device, photoelectric conversion device, optical communication logic device, and control method for a majority logic device

Abstract

A majority-decision logic device 1 comprises a non-magnetic semiconductor layer 10 made of a material that, when irradiated with light having at least two kinds of mutually different polarization states, generates electron spin waves having different phases corresponding to the polarization states. The non-magnetic semiconductor layer 10 comprises: three or more input portions to which a light signal is input; and at least one output portion that outputs a result of interference of the electron spin waves. The length of the distance between adjacent input portions as projected in the direction of vibration of the electron spin waves is an integer multiple of the wavelength of the electron spin waves.

Description

[Technical Field] 【0001】 The present invention relates to a majority logic device, a photoelectric conversion device, an optical communication logic device, and a method for controlling a majority logic device. [Background technology] 【0002】 A majority-ruling logic device using spin waves (magnons) generated by the continuous change in the magnetic order of a ferromagnetic material has been disclosed (for example, Non-Patent Document 1). Furthermore, a majority-ruling logic device using spin waves (electron spin waves) generated by the sustained spin precession of free electrons due to an effective magnetic field is also known, and a majority-ruling logic device using spin polarization information of a persistent spin helix (PSH) generated in a two-dimensional electron gas has been disclosed (for example, Patent Document 1). [Prior art documents] [Patent Documents] 【0003】 [Patent Document 1] Special Publication 2015-518267 [Non-patent literature] 【0004】 [Non-Patent Document 1] “Reconfigurable submicrometer spin-wave majority gate with electrical transducers” Talmelli et al., Science Advances, vol.6, issue 51, p.eabb4042, 18 December 2020 [Non-Patent Document 2] “Gate-controlled switching between persistent and inverse persistent spin helix states”, K. Yoshizumi, A. Sasaki, M. Kohda and J. Nitta”, APPLIED PHYSICS LETTERS 108, 132402 (2016) [Non-Patent Document 3] “Direct mapping of the formation of a persistent spin helix”, MP Walser, C. Reichl, W. Wegscheider, G. Salis, Nature Phys. advance online publication, 12 August 2012 [Overview of the project] [Problems that the invention aims to solve] 【0005】 The technology described in Non-Patent Document 1 requires the input and output sections of a majority logic device to be arranged in series along a linear ferromagnetic waveguide. In this case, the structure of the majority logic circuit is limited to one dimension, thus restricting the degree of freedom in arrangement. Consequently, the degree of freedom in circuit configuration is low, and it is not possible to realize diverse circuits, such as two-dimensional structures. Furthermore, this technology utilizes the magnetic field generated by high-frequency electrical signals to generate magnons. Therefore, it is necessary to use an electrical pulsed magnetic field as the input, which presents the challenge of difficulty in achieving advanced integration with optical signals used in optical communications, etc. 【0006】 The technology described in Patent Document 1 uses electron spin waves (PSH) instead of magnons, but still arranges the logic inputs in a one-dimensional manner. Furthermore, in order to prevent mixing of electron spin waves in the logic inputs, it is necessary to provide a predetermined gap between each logic input. Therefore, this technology also suffers from the problem of having a low degree of freedom in circuit configuration. 【0007】 This invention was made in view of these problems, and its purpose is to realize a majority-voting logic device that offers a high degree of freedom in circuit configuration and good compatibility with optical signals. [Means for solving the problem] 【0008】 To solve the above problems, a majority-voting logic device according to one aspect of the present invention has a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. The non-magnetic semiconductor layer has three or more input sections for inputting optical signals, and at least one output section for outputting the result of interference between electron spin waves. The deviation of the length obtained by projecting the distance between adjacent input sections in the direction of vibration of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. 【0009】 In one embodiment, the length obtained by projecting the distance between adjacent input sections onto the vibration direction of the electron spin wave may be an integer multiple of the wavelength of the electron spin wave. 【0010】 In one embodiment, the majority logic device may further comprise a waveguide layer laminated directly or via another layer onto a non-magnetic semiconductor layer. This waveguide layer may have waveguides individually connected directly or via another layer to each of three or more inputs, and may have mirrors at the locations where the waveguides are individually connected directly or via another layer to each of the three or more inputs for guiding light passing through the waveguides to each input. 【0011】 In one embodiment, the waveguide may be arranged in a direction substantially perpendicular to the direction of vibration of the electron spin wave. 【0012】 In one embodiment, the output unit may be positioned at an equal distance from each of the three or more input units. 【0013】 In one embodiment, the electron spin wave may be an inverse permanent spin rotation generated in a two-dimensional electron gas, and the three or more input portions may be arranged in a two-dimensional direction on a non-magnetic semiconductor layer. 【0014】 In one embodiment, when the Rashba spin-orbit interaction coefficient is α and the Dresselhaus spin-orbit interaction coefficient is β, the difference between the absolute value of α and the absolute value of β may be within 15%. 【0015】 In one embodiment, the three or more input portions may be arranged at each vertex of a polygon. 【0016】 In one embodiment, the three or more input portions may be arranged at each vertex of an equilateral triangle, and the output portion may be arranged at the centroid of the equilateral triangle. 【0017】 In one embodiment, the electron spin wave may be an electron spin wave that has changed to a helical spin mode by confinement of a two-dimensional electron gas to a one-dimensional thin wire structure, and the three or more input portions may be arranged in a one-dimensional direction on a non-magnetic semiconductor layer. 【0018】 Another embodiment of the present invention is an optoelectronic conversion device. This optoelectronic conversion device includes the above-described majority logic device and a magnetoresistive element that converts the spin polarization of the output portion into an electrical signal. 【0019】 Yet another embodiment of the present invention is also an optical communication device. This optical communication device includes the above-described majority logic device and an optical output element. 【0020】 Yet another embodiment of the present invention is also an optical communication device. This optical communication device includes the above-described majority logic device and a wavelength division multiplexed optical input element. 【0021】 Another aspect of the present invention is a control method. This method is a control method for a majority-ruling logic device, comprising a non-magnetic semiconductor layer made of a material that generates electron spin waves having a phase corresponding to the polarization state by irradiation with light having at least two different polarization states, wherein the non-magnetic semiconductor layer comprises three or more input sections for inputting an optical signal and at least one output section for outputting the result of interference between electron spin waves, and the deviation of the length obtained by projecting the distance between adjacent input sections in the direction of vibration of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength of the electron spin wave, wherein the optical signal is a control method for a majority-ruling logic device, wherein the optical signal is a control method for an optical signal modulated with right-handed circular polarization and left-handed circular polarization. 【0022】 In one embodiment, the control method for a majority logic device may compensate for the intensity of the optical signal input to the first input to be greater than the intensity of the optical signal input to the second input when three or more input units have a first input unit and a second input unit, and the distance between the first input unit and the output unit is longer than the distance between the second input unit and the output unit. 【0023】 In one embodiment, the control method for a majority logic device may involve inputting an optical signal that is always right-handed or left-handed circularly polarized to at least one of three or more input units. 【0024】 Another aspect of the present invention is a majority logic device. This majority logic device has a two-dimensional nanowire structure configured such that three or more odd-numbered one-dimensional nanowire structures for signal input converge at a single confluence point. Each of the one-dimensional nanowire structures for signal input has a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. Each of the one-dimensional nanowire structures for signal input has an input section for inputting an optical signal before the confluence point. The confluence point is provided with an output section that outputs the result of the interference of the electron spin waves. The deviation of the length obtained by projecting the distance between the confluence point and each input section of the one-dimensional nanowire structure for signal input in the direction of oscillation of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. 【0025】 In one embodiment, the electron spin wave is an inverse perpetual spin rotation generated in a two-dimensional electron gas. 【0026】 In one embodiment, when the Rashba spin-orbit interaction coefficient is α and the Dresselhaus spin-orbit interaction coefficient is β, the difference between the absolute value of α and the absolute value of β may be within 15%. 【0027】 In one embodiment, the majority logic device may further comprise a confluenced one-dimensional nanowire structure extending from a confluence point. In this case, instead of a confluence point, the confluenced one-dimensional nanowire structure may be provided with an output section. 【0028】 In one embodiment, there may be a plurality of individual majority logic devices, each composed of the aforementioned majority logic device. In this case, the converging one-dimensional nanowire structure of the individual majority logic devices merges at a single final confluence point. This final confluence point may be provided with an output unit that outputs the result of electron spin wave interference. 【0029】 Another aspect of the present invention is a majority logic device. This majority logic device has a two-dimensional nanowire structure configured such that three or more odd-numbered one-dimensional nanowire structures for signal input converge at a single confluence point. Each of the one-dimensional nanowire structures for signal input has a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. Each of the one-dimensional nanowire structures for signal input has an input section for inputting an optical signal before the confluence point. The confluence point is provided with an output section that outputs the result of the interference of the electron spin waves. The deviation of the distance between the confluence point and each input section of the one-dimensional nanowire structure for signal input from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. 【0030】 In one embodiment, the only spin-orbit interaction acting on the electron spin wave is the Rashva spin-orbit interaction. 【0031】 In one embodiment, the majority logic device may further comprise a confluenced one-dimensional nanowire structure extending from a confluence point. In this case, instead of a confluence point, the confluenced one-dimensional nanowire structure may be provided with an output section. 【0032】 In one embodiment, there may be multiple cell majority logic devices, each composed of the above-described majority logic device. In this case, the confluence one-dimensional nanowire structure of the multiple cell majority logic devices merges at a single final confluence point. This final confluence point is equipped with an output unit that outputs the result of electron spin wave interference. 【0033】 Furthermore, any combination of the above components, as well as any conversion of the expressions of this disclosure between methods, apparatus, systems, recording media, computer programs, etc., are also valid forms of this disclosure. [Effects of the Invention] 【0034】 According to the present invention, the objective is to realize a majority-voting logic device that offers a high degree of freedom in circuit configuration and good compatibility with optical signals. [Brief explanation of the drawing] 【0035】 [Figure 1] This is a schematic diagram of a majority-voting logic device according to the first embodiment. [Figure 2] This is a schematic diagram showing how the result of interference between three electron spin waves is read out at the output unit and then output. [Figure 3] This is a schematic diagram illustrating the polarization state of the light irradiated onto the input and the phase state of the electron spin wave after interference. [Figure 4] This is a schematic diagram illustrating the polarization state of the light irradiated onto the input and the phase state of the electron spin wave after interference. [Figure 5] This is a schematic diagram illustrating the polarization state of the light irradiated onto the input and the phase state of the electron spin wave after interference. [Figure 6] This is a schematic diagram illustrating the polarization state of the light irradiated onto the input and the phase state of the electron spin wave after interference. [Figure 7] This is a schematic diagram showing a non-magnetic semiconductor layer in which the input section is arranged in a regular hexagonal shape and the output section is positioned at the centroid of this hexagon. [Figure 8] This is a schematic diagram showing a non-magnetic semiconductor layer with input and output sections arranged in a one-dimensional direction. [Figure 9] This is a schematic diagram showing the generation of a wavelength-division multiplexed optical signal to be input to a wavelength-division multiplexed optical input element according to the fourth embodiment. [Figure 10] This is a schematic diagram of the wavelength division multiplexing optical input element used in the fourth embodiment. [Figure 11] This is a schematic diagram showing a majority-voting logic device according to a second embodiment. [Figure 12] This is a schematic diagram of a majority-voting logic device when one of the inputs is shifted in the x-direction. [Figure 13] This figure shows the simulation results of the time evolution of the electron spin wave phase at (x, y) = (0, 0) when one of the inputs is changed in the x direction. [Figure 14] This figure shows the polarization state of light and the phase state of the electron spin wave after interference when Δx=0. [Figure 15] This figure shows the polarization state of light and the phase state of the electron spin wave after interference when Δx = 0.2λ. [Figure 16] This figure shows the polarization state of light and the phase state of the electron spin wave after interference when Δx = 0.4λ. [Figure 17] This figure shows the simulation results of the electron spin wave phase at (x, y) = (0, 0) when one of the inputs is shifted in the x and y directions. [Figure 18] This is a schematic diagram showing a non-magnetic semiconductor layer in which the input section is arranged in a regular pentagon shape and the output section is positioned at the centroid of this regular pentagon. [Figure 19] This is a schematic diagram of a majority-voting logic device according to the sixth embodiment. [Figure 20] This is a schematic diagram of a majority-voting logic device according to the seventh embodiment. [Figure 21]This is a schematic diagram of a majority-voting logic device according to the eighth embodiment. [Figure 22] This is a circuit diagram of a conventional majority-rule logic device. [Figure 23] This is a schematic diagram of a majority-voting logic device according to the ninth embodiment. [Figure 24] This is a schematic diagram of a majority-voting logic device according to the tenth embodiment. [Modes for carrying out the invention] 【0036】 The present invention will be described below with reference to the drawings, based on preferred embodiments. The embodiments are illustrative and not limiting. Not all features or combinations thereof described in the embodiments are necessarily essential to the invention. The same or equivalent components, members, and processes shown in each drawing are denoted by the same reference numerals, and redundant explanations are omitted as appropriate. Furthermore, the scale and shape of each part shown in each drawing are set for convenience to facilitate explanation and should not be interpreted restrictively unless otherwise specified. When terms such as "first," "second," etc. are used in this specification or claims, unless otherwise specified, these terms do not indicate any order or importance, but are solely for distinguishing one configuration from another. In addition, some components that are not important for explaining the embodiments are omitted from the drawings. 【0037】 [First Embodiment] Figure 1 schematically shows a majority-voting logic device 1 according to the first embodiment. The majority-voting logic device 1 comprises a non-magnetic semiconductor layer 10. The non-magnetic semiconductor layer 10 comprises input sections 20a, 20b, and 20c, and an output section 30. In Figure 1, the x-axis is taken to the right in the plane of the paper, and the y-axis is taken upward (unless otherwise specified, the same applies hereafter). However, the x-axis is the vibration direction of the electron spin wave, which will be described later, and is determined by the crystal orientation of the non-magnetic semiconductor layer 10. 【0038】 In the example shown in Figure 1, the input units 20a, 20b, and 20c are located at the vertices of an equilateral triangle, and the output unit 30 is located at the centroid of this equilateral triangle. 【0039】 In other words, the output unit 30 is positioned at an equal distance from each of the input units 20a, 20b, and 20c. 【0040】 The non-magnetic semiconductor layer 10 is made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. Optical signals are input to input units 20a, 20b, and 20c, respectively. The output unit 30 reads out and outputs the result of the interference of the electron spin waves generated by these optical signals. 【0041】 Hereinafter, the wavelength of the electron spin wave will be denoted as λ, and n will be an integer. As shown in Figure 1, the length obtained by projecting the distance between inputs 20a and 20c onto the direction of vibration of the electron spin wave (x-axis direction) is nλ. Similarly, the length obtained by projecting the distance between inputs 20b and 20c onto the direction of vibration of the electron spin wave is also nλ. Furthermore, the length obtained by projecting the distance between inputs 20a and 20b onto the direction of vibration of the electron spin wave is 2nλ. Thus, in the non-magnetic semiconductor layer 10, the length obtained by projecting the distance between adjacent inputs onto the direction of vibration of the electron spin wave is an integer multiple of the wavelength of the electron spin wave. 【0042】 The non-magnetic semiconductor layer 10 will be explained in more detail. In the following example, we assume that there are two polarization states for the irradiated light: right-handed circular polarization and left-handed circular polarization. When such light is irradiated onto the input units 20a, 20b, and 20c, the non-magnetic semiconductor layer 10 generates an electron spin wave with phase 0 for right-handed circular polarization and an electron spin wave with phase π for left-handed circular polarization. Hereafter, we will associate the electron spin wave with phase 0 with the logical value "0" (i.e., "false") and the electron spin wave with phase π with the logical value "1" (i.e., "true"). Therefore, in this case, the right-handed circular polarization of the irradiated light corresponds to the logical value 0, and the left-handed circular polarization corresponds to the logical value 1. 【0043】 The electron spin waves generated by the light irradiated onto inputs 20a, 20b, and 20c interfere with each other. At this time, electron spin waves with the same phase of 0 and electron spin waves with the same phase of π reinforce each other through interference. Conversely, electron spin waves with one phase of 0 and the other phase of π weaken each other through interference. The result of the interference of the three electron spin waves is read out by the output unit and then output. Figure 2 schematically shows this process. 【0044】 Hereinafter, the logical values ​​corresponding to the polarization states of the light irradiated onto inputs 20a, 20b, and 20c are represented by the vector (20a, 20b, 20c). For example, (20a, 20b, 20c) = (0, 1, 0) indicates that the light irradiated onto input 20a is right-handed circularly polarized (electron spin wave phase 0, logical value 0), the light irradiated onto input 20b is left-handed circularly polarized (electron spin wave phase π, logical value 1), and the light irradiated onto input 20c is right-handed circularly polarized (electron spin wave phase 0, logical value 0). 【0045】 The simulation results shown in Figures 3 to 6 are used to explain the polarization state of the light irradiated onto the inputs 20a, 20b, and 20c, and the phase state of the electron spin wave after interference. The upper part of Figures 3 to 6 shows the polarization state of the light irradiated onto the inputs 20a, 20b, and 20c. Black circles indicate that the irradiated light is right-handed circularly polarized (electron spin wave phase 0, logical value 0). White circles indicate that the irradiated light is left-handed circularly polarized (electron spin wave phase π, logical value 1). The lower part of Figures 3 to 6 shows the phase of the electron spin wave after interference (specifically, 0.700 ns after irradiation). The white square shown near the center corresponds to the position of the output unit 30. 【0046】 Figure 3 shows the case where (20a, 20b, 20c) = (0, 0, 0). In this case, as shown in the lower panel, the phase of the electron spin wave after interference at the output unit 30 is 0. That is, the output unit 30 reads out a logical value of 0. This value is the majority vote value for (20a, 20b, 20c) = (0, 0, 0). 【0047】 Figure 4 shows the case where (20a, 20b, 20c) = (0, 0, 1). In this case, as shown in the lower panel, the phase of the electron spin wave after interference at the output unit 30 is 0. That is, the output unit 30 reads out a logical value of 0. This value is the majority vote value for (20a, 20b, 20c) = (0, 0, 1). 【0048】 Figure 5 shows the case where (20a, 20b, 20c) = (0, 1, 1). In this case, as shown in the lower panel, the phase of the electron spin wave after interference at the output unit 30 is π. That is, the output unit 30 reads out a logical value of 1. This value is the majority vote value for (20a, 20b, 20c) = (0, 1, 1). 【0049】 Figure 6 shows the case where (20a, 20b, 20c) = (1, 1, 1). In this case, as shown in the lower panel, the phase of the electron spin wave after interference at the output unit 30 is π. That is, the output unit 30 reads out a logical value of 1. This value is the majority vote value for (20a, 20b, 20c) = (1, 1, 1). 【0050】 As shown in Figures 3 to 6, the output unit 30 reads out a majority vote of logical values ​​corresponding to the polarization state of the light irradiated onto the input units 20a, 20b, and 20c. Although not shown in the illustration, the same applies to cases such as (20a, 20b, 20c) = (0, 1, 0), (1, 0, 0), (1, 0, 1), and (1, 1, 0). 【0051】 Table 1 summarizes the relationship between the polarization states (corresponding logical values) of the three types of light irradiated onto the input sections 20a, 20b, and 20c, and the phase (corresponding logical value) of the electron spin wave observed in the output section 30 after the interference of the electron spin waves. [Table 1] 【0052】 In this way, by arranging the inputs such that the length obtained by projecting the distance between adjacent inputs onto the direction of oscillation of the electron spin wave is an integer multiple of the wavelength of the electron spin wave, a majority-ruling logic device relating to the polarization states of three lights irradiated onto inputs 20a, 20b, and 20c can be realized. 【0053】 According to this embodiment, by providing a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with at least two types of light having different polarization states, it is possible to convert an optical signal having logic information represented by the polarization state into an electron spin wave having logic information represented by the spin state. Furthermore, by making the length obtained by projecting the distance between adjacent input sections in the direction of oscillation of the electron spin wave an integer multiple of the wavelength of the electron spin wave, a majority-vote logic circuit for the above logic signal can be realized. The input sections of this majority-vote logic circuit can be arranged in a two-dimensional direction. Moreover, since an optical signal is used as the input, rather than an electrical pulsed magnetic field, etc., it has high compatibility with optical communication and the like. 【0054】 As described above, according to this embodiment, the degree of freedom in circuit configuration is high, and it is not necessary to provide a predetermined gap between each of the logic input sections as in the technology described in Patent Document 1, and a majority-voting logic device with good compatibility with optical signals can be realized. 【0055】 (Specific example 1) The electron spin wave may be an inverse permanent spin swirling (iPSH) generated in a two-dimensional electron gas. In this case, each input may be arranged in a two-dimensional direction on the non-magnetic semiconductor layer 10. 【0056】 For example, in a III-V semiconductor heterostructure, by making two types of spin-orbit interactions with different origins, namely the absolute value of the Rashva spin-orbit interaction coefficient α and the absolute value of the Dresselhaus spin-orbit interaction coefficient β, equal, the direction of the effective magnetic field can be uniquely determined, and permanent spin rotation (in the broad sense) with suppressed spin relaxation can be generated. Permanent spin rotation (in the broad sense) is a state in which the phase of the electron spin wave shows a striped pattern, and the oscillation of the electron spin wave can be efficiently utilized while suppressing the diffusion of the electron spin wave. Here, the case where α=β is called permanent spin rotation (in the narrow sense), where the phase is constant in the direction of propagation of the electron spin wave and changes in the direction perpendicular to the direction of propagation. Also, the case where α=-β is called inverse permanent spin rotation, where the phase is constant in the direction perpendicular to the direction of propagation of the electron spin wave and changes in the direction of propagation. 【0057】 In this case, the difference between the absolute value of the Rashva spin-orbit interaction coefficient α and the absolute value of the Dresselhaus spin-orbit interaction coefficient β may be within 15% of the average value of the absolute values. Preferably, the difference between the absolute value of α and the absolute value of β is within 10% of the average value of the absolute values. More preferably, the absolute values ​​of α and β are equal. 【0058】 Table 2 shows the previously reported Rashva spin orbit interaction coefficient α and electron spin wave wavelength λ. λ is preferably between 1 nm and 10 μm. While all materials can be candidates for non-magnetic semiconductor materials for inverse permanent spin rotation, materials with a large λ are preferred for ease of manufacturing, and materials with a small λ are preferred for miniaturization. For example, tin sulfide (SnS) is considered useful. [Table 2] 【0059】 (Specific example 2) In the example in Figure 1, the input sections 20a, 20b, and 20c were arranged at the vertices of an equilateral triangle. However, the input sections are not limited to this, and may be arranged in a polygonal shape other than an equilateral triangle. Figure 7 shows a non-magnetic semiconductor layer 11 in which the input sections 20d, 20e, 20f, 20g, 20h, and 20i are arranged in a regular hexagon, and the output section 31 is placed at the centroid of this regular hexagon. In the non-magnetic semiconductor layer 11 as well, the length obtained by projecting the distance between adjacent input sections onto the vibration direction of the electron spin wave (x-axis direction) is an integer multiple of the wavelength of the electron spin wave (nλ or 2nλ). 【0060】 (Specific example 3) The electron spin wave may be an electron spin wave that has been transformed into a helical spin mode by confinement of a two-dimensional electron gas into a one-dimensional nanowire structure. Examples of electron spin waves transformed into helical spin modes include an inverse permanent spin rotation state and a state in which only Rashva spin-orbit interaction is at work. Here, the state in which only Rashva spin-orbit interaction is at work means a state in which the absolute value of the Rashva spin-orbit interaction coefficient α is 10 times or more the absolute value of the Dresselhaus spin-orbit interaction coefficient β. In this case, each input part may be arranged in the one-dimensional direction on a non-magnetic semiconductor layer. As the one-dimensional nanowire structure for the inverse permanent spin rotation state, for example, a GsAs / AlGsAs quantum well or an InGaAs / InAlAs quantum well can be used. Also, as the one-dimensional nanowire structure for the state in which only Rashva spin-orbit interaction is at work, for example, an InGaAs / InAlAs quantum well can be used. 【0061】 Figure 8 shows a non-magnetic semiconductor layer 12 in which the input sections 20j, 20k, and 20l and the output section 32 are arranged in a one-dimensional direction (x-axis direction). In the non-magnetic semiconductor layer 12 as well, the length obtained by projecting the distance between adjacent input sections onto the vibration direction of the electron spin wave (i.e., the x-axis direction) is an integer multiple (nλ) of the wavelength of the electron spin wave. 【0062】 [Second Embodiment] In another embodiment of the majority logic device, a waveguide layer is further laminated directly or via another layer onto a non-magnetic semiconductor layer. This waveguide layer has waveguides that are individually connected directly or via another layer to each of three or more inputs. The majority logic device has mirror sections at the locations where the waveguides are individually connected directly or via another layer to each of the three or more inputs (hereinafter also referred to as "ends") for guiding light that has passed through the waveguides to each input. 【0063】 Figure 11 schematically shows a device having a non-magnetic semiconductor layer in which a waveguide layer is stacked between other layers. This device has a structure in which a non-magnetic semiconductor layer, a cladding layer, a waveguide layer, and another cladding layer are sequentially stacked on a substrate. The waveguide material is selected to transmit light of the wavelength to be used. The material of the non-waveguide portion of the waveguide layer and the cladding layer is selected to have a lower refractive index than the waveguide (core) material. If the waveguide is a Si waveguide, infrared laser light may be used. In this case, SiO2 may be used for the non-Si waveguide portion of the waveguide layer and the cladding layer, and InGaAs may be used for the non-magnetic semiconductor layer. If GaAs is used for the non-magnetic semiconductor layer, a polymer waveguide formed from UV-curing resin may be used instead of a Si waveguide. 【0064】 The optical signal (pump light) travels through the waveguide and, upon reaching a position tangent to the input portion of the non-magnetic semiconductor layer (e.g., the three vertices of an equilateral triangle), is deflected by a mirror portion, such as a 45° mirror portion, and injected into the three input portions. In the non-magnetic semiconductor layer, if the pump light is right-handed circularly polarized, it generates an electron spin wave with phase 0; if it is left-handed circularly polarized, it generates an electron spin wave with phase π. The wavelength λ of the electron spin wave does not depend on the wavelength of the pump light (see the value of λ in Table 2). In the case of a Si waveguide, the sidewall portion and the 45° mirror portion may be formed by separate etching processes. For the 45° mirror processing of the end of the Si waveguide, anisotropic etching with TMAH may be used on the Si(001) surface, and with KOH on the Si(110) surface. 【0065】 In this embodiment, the waveguide may be arranged in a direction substantially perpendicular to the vibration direction of the electron spin wave. As will be described later, in the majority logic device of the present invention, the tolerance for misalignment is greater in the direction perpendicular to the vibration direction of the electron spin wave (y direction) than in the x direction. Since the misalignment of the 45° mirror processing is greater than the misalignment of the waveguide, it is preferable to have the waveguide in the y direction. 【0066】 [Third Embodiment] The third embodiment is a photoelectric conversion device. In the majority logic device described above, the output logic value was the spin polarization of an electron spin wave from the output section. In contrast, by using, for example, a magnetoresistive element (MR element) to convert this spin polarization into an electrical signal, a photoelectric conversion device equipped with a majority logic circuit can be realized. That is, this embodiment is a photoelectric conversion device comprising the majority logic device of the first or second embodiment and a magnetoresistive element that converts the spin polarization of the output section of the majority logic device into an electrical signal. 【0067】 [Fourth Embodiment] The fourth embodiment is an optical communication logic device. This optical communication logic device comprises a majority-voting logic device of the first or second embodiment and an optical output element. The optical output element may, for example, irradiate linearly polarized light as probe light and detect changes in the polarization state of transmitted / reflected light due to the Faraday effect / Kerr effect. If it is desired to utilize the output signal in addition to detection, the polarization may be separated using a polarizing beam splitter (PBS), similar to reading a magneto-optical disk, converted into an electrical signal using a photodiode, and then differential amplification may be performed. 【0068】 In this embodiment, the optical communication logic device may comprise a majority-voting logic device according to the first or second embodiment and a wavelength-division multiplexing (WDM) optical input element. In this case, the WDM optical input element may be an array waveguide diffraction grating (AWG) device consisting of an input waveguide, a slab waveguide, an optical waveguide array, a slab waveguide, and an output waveguide group, as schematically shown in Figure 10. Here, the WDM optical input element functions as an optical demultiplexer that divides a WDM optical signal into a plurality of single-wavelength optical signals. 【0069】 Figure 9 schematically shows how wavelength-division multiplexed optical signals are generated for input to the AWG device's input waveguide. First, three laser diodes LD1, LD2, and LD3 oscillate linearly polarized laser light with wavelengths λ1, λ2, and λ3, respectively. These linearly polarized laser lights are converted to right-handed circular polarization by a quarter-wave plate (Q). Subsequently, these lights are modulated by electrical signals 1, 2, and 3 in EO modulators 1, 2, and 3, respectively, to become left-right circularly polarized modulated signals. Each of these left-right circularly polarized modulated signals is combined by an optical multiplexer and passes through an optical fiber as a wavelength-division multiplexed optical signal, which is then input to the input waveguide of the AWG device shown in Figure 10. The wavelength-division multiplexed optical signal input to the AWG device is wavelength-separated and output, resulting in pump light that regenerates the left-right circularly polarized modulated signals output from each EO modulator. 【0070】 Figure 10 schematically shows the AWG device used in this embodiment. The entire AWG device is formed on a silicon substrate and includes an input waveguide, an optical waveguide array, two slab waveguides, and an output waveguide group. Light input to the input waveguide is wavelength-separated, and left and right circularly polarized modulated signals are regenerated to output pump light from the output waveguide group. If the majority logic device is the second embodiment, the pump lights λ1, λ2, and λ3 travel through the waveguides and, upon reaching a position tangent to the input portion of the non-magnetic semiconductor layer (e.g., three points of an equilateral triangle), are deflected by a 45° mirror and injected into the three input portions. In the non-magnetic semiconductor layer, if the pump light is right-handed circularly polarized, it generates an electron spin wave with phase 0, and if it is left-handed circularly polarized, it generates an electron spin wave with phase π. The wavelength λ of the electron spin wave does not depend on the wavelength of the pump light (see the value of λ in Table 2). 【0071】 [Fifth Embodiment] The fifth embodiment is a control method for a majority-ruling logic device. This majority-ruling logic device has a non-magnetic semiconductor layer made of a material that generates electron spin waves having a phase corresponding to the polarization state when irradiated with light having at least two different polarization states. This non-magnetic semiconductor layer has three or more input sections for inputting optical signals, and at least one output section for outputting the result of interference between electron spin waves. The deviation of the length obtained by projecting the distance between adjacent input sections in the direction of oscillation of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. This majority-ruling logic device uses optical signals modulated with right-handed circular polarization and left-handed circular polarization. 【0072】 According to this embodiment, the majority-voting logic device can be controlled in various ways. 【0073】 (Control example 1) Consider the case where the majority logic device described above has multiple inputs, each having a first input and a second input, and the distance between the first input and the output is greater than the distance between the second input and the output. In this case, the device may be controlled to compensate for the difference in the intensity of the optical signal input to the first input so that it is greater than the intensity of the optical signal input to the second input. By controlling the majority logic device in this way, it is possible to compensate for the difference in optical signal attenuation due to the difference in distance between the input and output. 【0074】 (Control example 2) The majority logic device described above may be controlled to input an optical signal that is always right-handed or left-handed circularly polarized to at least one of its multiple inputs. For example, by inputting an optical signal that is always right-handed circularly polarized (i.e., a logic value of 0) to one of the three inputs, an AND circuit with the remaining two inputs can be realized. Alternatively, by inputting an optical signal that is always left-handed circularly polarized (i.e., a logic value of 1) to one of the three inputs, an OR circuit with the remaining two inputs can be realized. Furthermore, to realize a majority logic circuit where the number of inputs is even and outputs the value with the larger number of inputs if the number of 0s and 1s is not equal, and outputs 0 if the number of 0s and 1s is equal, one additional input may be added and controlled to input an optical signal that is always right-handed circularly polarized (i.e., a logic value of 0). 【0075】 This control example allows for the implementation of various types of logic circuits. 【0076】 The present invention has been described above based on embodiments. These embodiments are illustrative, and it will be understood by those skilled in the art that various modifications are possible in combinations of their components and processing processes, and that such modifications also fall within the scope of the present invention. 【0077】 (Variation 1) In the above embodiment, the length obtained by projecting the distance between adjacent input sections onto the vibration direction of the electron spin wave was an integer multiple of the wavelength of the electron spin wave. However, it is considered that this length does not necessarily have to be an integer multiple of the wavelength of the electron spin wave. To verify this, the inventors performed the following simulation. 【0078】 Figure 12 shows a non-magnetic semiconductor layer 13 comprising input sections 20m, 20n, and 20o, and an output section 33 (same as in Figure 1). The input sections 20m, 20n, and 20o are arranged at the vertices of an equilateral triangle, and the output section 33 is located at the centroid of this equilateral triangle. The length obtained by projecting the distance between input section 20m and 20n, and the distance between input section 20n and 20o, onto the direction of oscillation of the electron spin wave (x-axis direction) is λ. Note that in Figure 12, the arrangement is inverted vertically compared to Figure 1, but there is no essential difference between the two. Black circles indicate that the irradiated light is right-handed circularly polarized (electron spin wave phase 0, logical value 0). White circles indicate that the irradiated light is left-handed circularly polarized (electron spin wave phase π, logical value 1). In the initial state of Figure 12 (time t=0.000ns), the polarization state is (20m, 20n, 20o)=(0, 1, 1). 【0079】 Below, we consider the case where the input section 20n is shifted by Δx in the x direction. We will use simulation to verify whether a majority-voting logic circuit can be correctly realized when the arrangement of the input sections 20m, 20n, and 20o deviates from an equilateral triangle. 【0080】 Figure 13 shows the simulation results of the time evolution of the electron spin wave phase at (x, y) = (0, 0) when the input 20n is varied in the x direction. The horizontal axis represents the ratio Δx / λ of the input 20n displacement Δx to the wavelength λ, and the vertical axis represents time t (ns). As shown in the figure, when Δx / λ = 0, 1, and 2, the phase of the electron spin wave is π, i.e., the logical value is 1 (in this case, majority logic is correctly established). When Δx / λ = 0.5 and 1.5, the phase of the electron spin wave is 0, i.e., the logical value is 0 (in this case, majority logic is not correctly established). 【0081】 Figure 14 shows the polarization state of the light irradiated onto the inputs 20m, 20n, and 20o when Δx=0, and the phase state of the electron spin wave after interference. The upper panel shows the polarization state of the light irradiated onto each input. The lower panel shows the phase of the electron spin wave after interference (time t=1.000ns) (the white circle shown near the center corresponds to the position of the output 33). As shown in the figure, after the interference of the electron spin wave, the logical value at the position of the output 33 is 1. This indicates that majority voting logic is realized for (20m, 20n, 20o)=(0, 1, 1). 【0082】 Figure 15 shows the polarization state of the light irradiated onto the inputs 20m, 20n, and 20o, and the phase state of the electron spin wave after interference, when Δx = 0.2λ. As shown in the figure, after the interference of the electron spin wave, the logical value at the position of the output 33 is 1. Therefore, in this case as well, it can be seen that majority voting logic is realized for (20m, 20n, 20o) = (0, 1, 1). 【0083】 Figure 16 shows the polarization state of the light irradiated onto the inputs 20m, 20n, and 20o, and the phase state of the electron spin wave after interference, when Δx = 0.4λ. As shown in the figure, the logical value at the output 33 is 0 after the interference of the electron spin wave. Therefore, in this case, the majority voting logic is not correctly implemented for (20m, 20n, 20o) = (0, 1, 1), and an error has occurred. 【0084】 As can be seen from the simulation results above, in this equilateral triangle configuration, it is expected that a majority-voting logic circuit can be correctly implemented even if one of the inputs is shifted by, for example, about 25% in the x-direction. 【0085】 Next, Figure 17 shows the simulation results of the electron spin wave phase at (x, y) = (0, 0) when the input section 20n is shifted in the x and y directions. The horizontal axis represents the ratio of the shift in the x direction Δx to the wavelength λ, Δx / λ, and the vertical axis represents the ratio of the shift in the y direction Δy to the wavelength λ, Δy / λ. 【0086】 As illustrated, the phase changes with respect to the x-direction deviation, and the phase reverses every half wavelength. On the other hand, the phase does not change with respect to the y-direction deviation, and only the amplitude changes. Therefore, with regard to the realization of a majority-voting logic circuit, the y-direction deviation is considered to have a relatively higher tolerance than the x-direction deviation. 【0087】 Figure 18 shows an example in which five input units 20p, 20q, 20r, 20s, and 20t are placed at the vertices of a regular pentagon, and the output unit 34 is placed at the centroid of the regular pentagon. Here, it is assumed that the length obtained by projecting the distance between input units 20p and 20s onto the vibration direction of the electron spin wave (x-axis direction) is twice the wavelength λ of the electron spin wave (2λ). Here, if the distance between the center of each input unit (each vertex of the regular pentagon) and the center of the output unit 34 (the centroid of the regular pentagon) is r, 2λ = r cos 54° Therefore, the length obtained by projecting the distance between the input section 20t and 20s onto the vibration direction (x-axis direction) of the electron spin wave is, r cos18° ≈ 3.23λ This means that the length obtained by projecting the distance between inputs 20t and 20s onto the direction of electron spin wave vibration (x-axis direction) is shifted by approximately 0.23λ in the x-direction from the nearest integer multiple of the wavelength (3λ). This shift (approximately 23% of the wavelength λ) is within 25% of the wavelength λ. Therefore, it is considered that a majority-voting logic circuit can be correctly realized even when each input is arranged at each vertex of a regular pentagon in this way. 【0088】 (Modification 2) In the examples so far, the output was set at a position where the length obtained by projecting the distance between the output and input into the direction of the electron spin wave's vibration was an integer multiple of the electron spin wave's wavelength. In contrast, the output can also be set at a position where the length obtained by projecting the distance between the output and input into the direction of the electron spin wave's vibration is an integer + 1 / 2 times the electron spin wave's wavelength. This allows for obtaining an output where a NOT gate is applied to the majority logic. In this case, if necessary, compensation may be given for the difference in optical signal attenuation due to the difference in distance between the input and output, as described in Control Example 1. 【0089】 Furthermore, by using two or more output units, it is possible to obtain a majority-rule logic output and its NOT output simultaneously, or to improve accuracy by combining two or more outputs. 【0090】 [Sixth Embodiment] In a one-dimensional nanowire structure formed with a semiconductor quantum well, electron spin waves with a defined phase state can be generated by irradiating electrons within the one-dimensional nanowire structure with polarized light. Furthermore, electron spin waves with a defined phase state can be input from an adjacent one-dimensional nanowire structure. The generated or input electron spin waves propagate within the one-dimensional nanowire structure. Depending on the type and magnitude of the acting spin-orbit interaction, these electron spin waves can take on the following states. 【0091】 The PSH (Permanent Spin Swirling) state is achieved when the strength α of the Rashva spin-orbit interaction and the strength β of the Dresselhaus spin-orbit interaction are equal (α=β). In this state, the direction of the effective magnetic field created by the spin-orbit interaction is constant regardless of the direction of electron motion. Therefore, the precession of spin is not affected by electron scattering, resulting in a state where spin relaxation is suppressed. Specifically, coherent rotation of spin persists in the [1 -1 0] direction of the crystal, while in the

[0110] direction perpendicular to this, spin relaxation is suppressed, and the direction of spin propagates without rotation. 【0092】 The iPSH (inverse perpetual spin rotation) state is realized when the sign of the strength of the Rashva spin-orbit interaction is reversed and becomes equal to the strength of the Dresselhaus spin-orbit interaction (α = -β). In this iPSH state, the direction of the effective magnetic field is changed by 90 degrees compared to the PSH state, and the state changes from a spin-precessing state to a non-spin-precessing state. Specifically, in the [1 -1 0] direction of the crystal, the direction of spin propagates without rotation, while in the

[0110] direction perpendicular to this, a coherent rotation of spin is sustained. 【0093】 In the above explanation, the PSH (Permanent Spin Rotation) state was defined as the state where α = β, and the iPSH state was defined as the state where α = -β. In actual embodiments, the absolute values ​​of α and β do not need to be exactly equal in either the PSH state or the iPSH state. For example, in the experimental example of realizing PSH described in Non-Patent Document 3, α and β (however, in Reference Document 3, β is defined as β1-β3) are α = (1.6_2.3) × 10 -13 eVm, β1-β3=(1.9_2.6)×10 -13 The values ​​are eVm, and the magnitude of the absolute values ​​of the two differs by more than 10%. However, even in this case, the striped spin pattern required for PSH can be formed. Therefore, even if the absolute values ​​of α and β differ by about 10%, the PSH state and iPSH state can be realized. Furthermore, according to the inventors' considerations, it was found that a difference of about 15% or less in the absolute values ​​of α and β is acceptable. 【0094】 Another characteristic state is one in which only the Rashva spin-orbit interaction acts as the spin-orbit interaction (|α|≧10|β|). 【0095】 Here, the strength β of the Dresselhaus spin-orbit interaction is an intrinsic value determined by the material, while the strength α of the Rashba spin-orbit interaction is a value that changes with the carrier concentration. The carrier concentration can be controlled by the amount of impurity doping into the one-dimensional nanowire structure, or by providing electrodes on the one-dimensional nanowire structure and applying a voltage to the electrodes. Two embodiments are illustrated below. 【0096】 The first embodiment is a one-dimensional nanowire structure in which spin-orbit interaction is at work, resulting in an iPSH state. In this case, the quantum well having a one-dimensional nanowire structure through which electrons propagate is defined, with the

[0110] direction of the crystal as the major axis (x-axis) and the [1 -1 0] direction as the y-axis direction perpendicular to the x-axis. When the one-dimensional nanowire structure is in the iPSH state, electrons propagate while maintaining a coherent rotation of spin. In the first embodiment, distance refers to the distance projected in the x-direction. 【0097】 The second aspect is a one-dimensional fine wire structure in a state where only Rashba spin-orbit interaction acts. In this case, the major axis (x-axis) can be determined regardless of the crystal orientation, and the y-axis may be taken in a direction perpendicular to the x-axis. When the one-dimensional fine wire structure is in a state where only Rashba spin-orbit interaction acts, electrons propagate while maintaining coherent rotation of the spin. In the case of the second aspect, the distance refers to the distance in the xy plane. 【0098】 Such a one-dimensional fine wire structure can be fabricated as follows (for example, Non-Patent Document 2). Specifically, in the example of Non-Patent Document 2, after epitaxially growing an InAlAs / InGaAs / InAlAs quantum well structure on an InP substrate using metalorganic chemical vapor deposition (MOCVD), a one-dimensional fine wire structure in the

[0110] direction is fabricated by photolithography and etching. The film is stacked in the following order from the InP substrate. 200 nm In 0.52 Al 0.48 As 6 nm In 0.52 Al 0.48 As (Si doping at 1.2×10 18 cm -3 )) 6 nm In 0.52 Al 0.48 As 7 nm In 0.53 Ga 0.47 As quantum well 6 nm In 0.52 Al 0.48 As 6 nm In 0.52 Al 0.48 As (Si doping at 3.2×10 18 cm -3 )) 10 nm In 0.52 ​​​​​​​​​ 【0099】 The first embodiment (iPSH state) will be described. Figure 19 schematically shows the majority-voting logic device 2 in this embodiment (sixth embodiment). The one-dimensional nanowire structures 40a, 40b, and 40c for signal input each have input sections 41a, 41b, and 41c that input optical signals before the confluence point 42. The one-dimensional nanowire structures for signal input merge at the confluence point to form a two-dimensional nanowire structure. 【0100】 The confluence point 42 is equipped with an output unit 43 that outputs the result of the interference of electron spin waves. 【0101】 The length obtained by projecting the distance between the confluence point 42 and the respective input sections 41a, 41b, and 41c of the one-dimensional nanowire structures 40a, 40b, and 40c for signal input, in the direction of electron spin wave vibration, is an integer multiple of the wavelength λ. In the example in Figure 19, the lengths obtained by projecting the distance between the confluence point 42 and the respective input sections 41a, 41b, and 41c of the one-dimensional nanowire structures 40a, 40b, and 40c, in the direction of electron spin wave vibration, are lλ, mλ, and nλ, respectively (where l, m, and n are natural numbers). For example, with respect to a circle with radius 2λ centered at the confluence point 42, the intersection point of the line extending in the X-axis direction through the confluence point and the circumference can be defined as 41a, and the intersection points of the two lines passing through the confluence point and making a 60° angle with the X-axis and the circumference can be defined as 41b and 41c. 【0102】 In this way, by making the distance between the confluence point 42 and the input sections 41a, 41b, and 41c of the one-dimensional nanowire structures 40a, 40b, and 40c for signal input, such that the length obtained by projecting the distance in the direction of oscillation of the electron spin wave is an integer multiple of the wavelength of the electron spin wave, a majority-ruling logic device relating to the polarization states of the three lights irradiated onto the input sections 41a, 41b, and 41c can be realized. 【0103】 In this embodiment, the difference between the absolute value of the Rashva spin-orbit interaction coefficient α and the absolute value of the Dresselhaus spin-orbit interaction coefficient β may be within 15% of the average value of the absolute values. Preferably, the difference between the absolute value of α and the absolute value of β is within 10% of the average value of the absolute values. More preferably, the absolute values ​​of α and β are equal. 【0104】 According to this embodiment, a majority-voting logic circuit can be realized using a one-dimensional nanowire structure comprising a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. 【0105】 The length obtained by projecting the distance between the input sections 41a, 41b, and 41c of the one-dimensional nanowire structures 40a, 40b, and 40c for signal input, respectively, onto the direction of oscillation of the electron spin wave, is preferably an integer multiple of the wavelength λ. However, this may deviate slightly from an integer multiple of the wavelength. As shown in the aforementioned Modification 1, it is expected that a majority-voting logic circuit can be correctly realized even if this length deviates by about 25% from an integer multiple of the wavelength. 【0106】 In the example shown in Figure 19, the majority logic device 2 consists of a one-dimensional nanowire structure for three signal inputs. However, this number is not limited to three; it can be any odd number of wires, three or more. 【0107】 [Seventh Embodiment] Figure 20 schematically shows a majority logic device 3 according to the seventh embodiment. The majority logic device 3 comprises three one-dimensional nanowire structures 40a, 40b, and 40c for signal input, and a confluence one-dimensional nanowire structure 44 extending from a confluence point 42. In the majority logic device 3, the output unit 431 is provided in the confluence one-dimensional nanowire structure 44 instead of the output unit 43 provided at the confluence point 42 of the majority logic device 2 in Figure 19. The other configurations of the majority logic device 3 are the same as those of the majority logic device 2. 【0108】 According to this embodiment, the degree of freedom of the output position can be increased in a majority-voting logic circuit using a one-dimensional nanowire structure for signal input. 【0109】 [Eighth Embodiment] Figure 21 schematically shows a majority-rule logic device 4 according to the eighth embodiment. The majority-rule logic device 4 comprises a plurality of majority-rule logic devices 3 according to the seventh embodiment. Hereinafter, in this specification, the plurality of majority-rule logic devices 3 constituting this embodiment will be referred to as a "cell majority-rule logic device". That is, the majority-rule logic device 4 comprises three cell majority-rule logic devices 45a, 45b, and 45c. 【0110】 The merged one-dimensional nanowire structures of the three cell majority logic devices merge at a single merge point 46. Hereinafter, in this specification, the point where all the cell majority logic devices in this embodiment merge will be referred to as the "final merge point." That is, the merged one-dimensional nanowire structures of the cell majority logic devices 45a, 45b, and 45c merge at a single final merge point 46. 【0111】 At the final confluence point 46, there is an output unit 432 that outputs the result of the interference of electron spin waves. 【0112】 In the example shown in Figure 21, the majority logic device 4 is composed of three cell majority logic devices. However, this number is not limited to three, and any number of cell majority logic devices may be used. 【0113】 According to this embodiment, a majority voting logic device can be realized with respect to the polarization state of the light irradiated onto the input portion of each cell majority voting logic device. 【0114】 For comparison, Figure 22 shows a conventional 9-input majority logic device formed using AND and OR circuits. This 9-input majority logic device is constructed by combining four 3-input majority logic devices. In this configuration, the calculation results (majority vote results) output from the three first-stage 3-input majority logic devices are input to the second-stage 3-input majority logic device to output the final majority vote result. However, as shown in the figure, if, for example, five 0s and four 1s are input, the output should be 0 as the final majority vote result, but the incorrect result of 1 is output. This is an unavoidable problem in multi-stage digital circuits. 【0115】 In contrast, according to this embodiment, for example, the correct result can be obtained regardless of which input value is input to the majority logic device 4 in Figure 21. This is an advantage that comes from using the interference of electron spin waves generated by optical signals, which cannot be achieved with multi-stage digital circuits. 【0116】 [Ninth Embodiment] The second embodiment (a state in which only Rashba spin-orbit interaction is at work) will be described. Figure 23 schematically shows the majority logic device 5 of this embodiment (the ninth embodiment). The majority logic device 5 comprises three one-dimensional nanowire structures 40d, 40e, and 40f for signal input. The one-dimensional nanowire structures 40d, 40e, and 40f for signal input each have input sections 41d, 41e, and 41f for inputting optical signals before the confluence point 42. 【0117】 The confluence point 42 is equipped with an output unit 43 that outputs the result of the interference of electron spin waves. 【0118】 The distances in the XY plane between the confluence point 42 and the respective input sections 41d, 41e, and 41f of the one-dimensional nanowire structures 40d, 40e, and 40f for signal input are integer multiples of the wavelength λ. In the example shown in Figure 23, the distances in the XY plane between the confluence point 42 and the respective input sections 41d, 41e, and 41f of the one-dimensional nanowire structures 40d, 40e, and 40f are lλ, mλ, and nλ, respectively (where l, m, and n are natural numbers). For example, with respect to a circle with radius 2λ centered at the confluence point 42, the intersection points of an arbitrary line passing through the confluence point and the circumference can be designated as input points 41d, 41e, and 41f. 【0119】 In the second embodiment, compared to the first embodiment, the lifetime (relaxation time) of the electron spin waves is shorter, but the number of one-dimensional nanowire structures that converge at the confluence point can be increased. Therefore, in the first embodiment, the 9 inputs must be implemented using a 3-input, 2-stage cell majority logic device as shown in Figure 21, but in the second embodiment, the 9 inputs can be implemented using a 9-input, 1-stage device. 【0120】 [Tenth Embodiment] Figure 24 schematically shows a majority logic device 6 according to the tenth embodiment. The majority logic device 6 comprises three one-dimensional nanowire structures 40d, 40e, and 40f for signal input, and a confluence one-dimensional nanowire structure 44 extending from a confluence point 42. In the majority logic device 6, the output unit 431 is provided in the confluence one-dimensional nanowire structure 44 instead of the output unit 43 provided at the confluence point 42 of the majority logic device 5 in Figure 23. The other configurations of the majority logic device 6 are the same as those of the majority logic device 5. 【0121】 According to this embodiment, the degree of freedom of the output position can be increased in a majority-voting logic circuit using a one-dimensional nanowire structure for signal input. 【0122】 Any combination of the embodiments and modifications described above is also useful as an embodiment of the present invention. The new embodiments resulting from these combinations possess the combined effects of each of the embodiments and modifications that are combined. 【0123】 The embodiments and modifications have been described above. In understanding the technical concept abstracted from the embodiments and modifications, the technical concept should not be interpreted as being limited to the content of the embodiments and modifications. The embodiments and modifications described above are merely examples, and many design changes such as changes, additions, and deletions of components are possible. In the embodiments, the content in which such design changes are possible is emphasized with the notation "embodiment." However, design changes are also permitted in content without such notation. [Industrial applicability] 【0124】 The technology disclosed herein can be used in fields such as optical communications, photoelectric conversion systems, and network computers. [Explanation of symbols] 【0125】 1. Majority voting logic device, 2. Majority voting logic device, 3. Majority-rule logic device, 4. Majority-rule logic device, 5. Majority-rule logic device, 6. Majority voting logic device, 10. Non-magnetic semiconductor layer, 11. Non-magnetic semiconductor layer, 12. Non-magnetic semiconductor layer, 13. Non-magnetic semiconductor layer, 20a... Input section, 20b... Input section, 20c... Input section, 20d... Input section, 20e·· Input section, 20f·· Input section, 20g...Input section, 20h... Input section, 20i... Input section, 20j...Input section, 20k...input section, 20L... Input section, 20m... Input section, 20n...input section, 200·· Input section, 20p... Input section, 20q... Input section, 20r·· Input section, 20s... Input section, 20t... Input section, 30. Output section, 31.. Output section, 32. Output section, 33.. output section, 34.. output section, 40a ··One-dimensional thin wire structure for signal input, 40b ··One-dimensional thin wire structure for signal input, 40c ··One-dimensional thin wire structure for signal input, 40d··One-dimensional thin wire structure for signal input, 40e··One-dimensional thin wire structure for signal input, 40f··One-dimensional thin wire structure for signal input, 41a...Input section, 41b...Input section, 41c...Input section, 41d...Input section, 41e...Input section, 41f...Input section, 42...confluence, 43.. output section, Output section of 431··, 432...Output section, 44...merging one-dimensional thin line structure, 45a Cell majority voting logic device, 45b Cell majority voting logic device, 45c ··Cell majority voting logic device, 46...Final merging point.

Claims

[Claim 1] The material comprises a non-magnetic semiconductor layer that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states, The non-magnetic semiconductor layer comprises three or more input sections for inputting optical signals, and at least one output section for outputting the result of the interference of the electron spin waves. A majority-voting logic device characterized in that the deviation of the length obtained by projecting the distance between adjacent input sections in the direction of vibration of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. [Claim 2] The majority voting logic device according to claim 1, characterized in that the length obtained by projecting the distance between adjacent input sections onto the vibration direction of the electron spin wave is an integer multiple of the wavelength of the electron spin wave. [Claim 3] The waveguide layer is further laminated directly or via another layer onto the non-magnetic semiconductor layer, The waveguide layer has waveguides that are individually connected to each of the three or more input sections, either directly or via other layers. The majority voting logic device according to claim 1 or 2, wherein the waveguide has a mirror section at a position where it is individually connected to each of the three or more input sections directly or via another layer, for guiding light that has passed through the waveguide to each input section. [Claim 4] The majority-voting logic device according to claim 3, characterized in that the waveguide is arranged in a direction substantially perpendicular to the vibration direction of the electron spin wave. [Claim 5] The majority logic device according to claim 1 or 2, characterized in that the output unit is arranged at an equal distance from each of the three or more input units. [Claim 6] The aforementioned electron spin wave is an inverse perpetual spin rotation generated in a two-dimensional electron gas. The majority logic device according to claim 1 or 2, characterized in that the three or more input units are arranged in a two-dimensional direction on the non-magnetic semiconductor layer. [Claim 7] When the Rashba spin-orbit interaction coefficient is α and the Dresselhaus spin-orbit interaction coefficient is β, The majority voting logic device according to claim 6, characterized in that the difference between the absolute value of α and the absolute value of β is within 15% of the mean value of the absolute values. [Claim 8] The majority logic device according to claim 6, characterized in that the three or more input units are arranged at each vertex of the polygon. [Claim 9] The three or more input units are arranged at each vertex of the equilateral triangle. The majority voting logic device according to claim 8, characterized in that the output unit is positioned at the centroid of the equilateral triangle. [Claim 10] The electron spin wave is an electron spin wave that has been transformed into a helical spin mode by the confinement of a two-dimensional electron gas into a one-dimensional nanowire structure, The majority voting logic device according to claim 1 or 2, characterized in that the three or more input units are arranged in a one-dimensional direction on the non-magnetic semiconductor layer. [Claim 11] A majority voting logic device according to claim 1 or 2, A magnetoresistive element that converts the spin polarization of the output section into an electrical signal, A photoelectric conversion device equipped with [a specific feature]. [Claim 12] A majority voting logic device according to claim 1 or 2, Optical output element and, An optical communication logic device equipped with [a specific feature]. [Claim 13] A majority voting logic device according to claim 1 or 2, Wavelength division multiplexing optical input element, An optical communication logic device equipped with [a specific feature]. [Claim 14] A control method for a majority-ruling logic device comprising a non-magnetic semiconductor layer made of a material that generates electron spin waves having a phase corresponding to the polarization states by irradiation with light having at least two different polarization states, wherein the non-magnetic semiconductor layer comprises three or more input units for inputting optical signals and at least one output unit for outputting the result of interference of the electron spin waves, and the deviation of the length obtained by projecting the distance between adjacent input units in the direction of vibration of the electron spin waves from an integer multiple of the wavelength of the electron spin waves is within 25% of the wavelength, A method for controlling a majority-ruling logic device, wherein the optical signal is modulated with right-handed circular polarization and left-handed circular polarization. [Claim 15] The three or more input units each have a first input unit and a second input unit. The control method according to claim 14, characterized in that, when the distance between the first input unit and the output unit is longer than the distance between the second input unit and the output unit, the intensity of the optical signal input to the first input unit is compensated to be greater than the intensity of the optical signal input to the second input unit. [Claim 16] The control method according to claim 14, characterized in that an optical signal that is always right-handed circularly polarized or left-handed circularly polarized is input to at least one of the three or more input units. [Claim 17] It has a two-dimensional nanowire structure in which three or more odd-numbered one-dimensional nanowire structures for signal input converge at a single junction. Each of the aforementioned one-dimensional nanowire structures for signal input has a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. Each of the aforementioned one-dimensional nanowire structures for signal input is equipped with an input section for inputting an optical signal before the confluence point, The system is equipped with an output unit that outputs the result of the electron spin wave interfering with the aforementioned confluence point. A majority-ruling logic device characterized in that the deviation of the length obtained by projecting the distance between the confluence point and each input portion of the one-dimensional nanowire structure for signal input in the direction of vibration of the electron spin wave from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. [Claim 18] The majority voting logic device according to claim 17, characterized in that the electron spin wave is an inverse perpetual spin rotation generated in a two-dimensional electron gas. [Claim 19] When the Rashba spin-orbit interaction coefficient is α and the Dresselhaus spin-orbit interaction coefficient is β, The majority voting logic device according to claim 18, characterized in that the difference between the absolute value of α and the absolute value of β is within 15% of the mean value of the absolute values. [Claim 20] It has a two-dimensional nanowire structure in which three or more odd-numbered one-dimensional nanowire structures for signal input converge at a single junction. Each of the aforementioned one-dimensional nanowire structures for signal input has a non-magnetic semiconductor layer made of a material that generates electron spin waves having different phases depending on the polarization state when irradiated with light having at least two different polarization states. Each of the aforementioned one-dimensional nanowire structures for signal input is equipped with an input section for inputting an optical signal before the confluence point, The system is equipped with an output unit that outputs the result of the electron spin wave interfering with the aforementioned confluence point. A majority-ruling logic device characterized in that the deviation of the distance between the confluence point and each input portion of the one-dimensional nanowire structure for signal input from an integer multiple of the wavelength of the electron spin wave is within 25% of the wavelength. [Claim 21] The majority voting logic device according to claim 20, characterized in that only the Rashba spin-orbit interaction acts as the spin-orbit interaction with respect to the electron spin wave. [Claim 22] The structure further comprises a confluence one-dimensional nanowire structure extending from the aforementioned confluence point, The majority voting logic device according to any one of claims 17 to 21, characterized in that the output unit is provided in the confluence one-dimensional nanowire structure instead of the confluence point. [Claim 23] The system comprises a plurality of cell majority logic devices, each composed of a majority logic device as described in claim 22. The aforementioned one-dimensional nanowire structure of multiple cell majority logic devices merges at a single final merging point. A majority-ruling logic device characterized in that the final confluence point is equipped with an output unit that outputs the result of the interference of the electron spin waves.

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