Array of light-emitting devices with reduced optical crosstalk

Abstract

1. An array comprising a plurality of light-emitting pixels, at least two of the plurality of light-emitting pixels separated by an organic semiconductor dispersed in a medium, the organic semiconductor configured to absorb light of a defined wavelength, thereby reducing optical crosstalk across the medium between at least two of the plurality of light-emitting pixels.

Description

Technical Field

[0001] The present invention relates to an array of light-emitting pixels and a method of forming an array of light-emitting pixels. In particular, but not exclusively, the present invention relates to an array of light-emitting diode devices with reduced optical crosstalk, and a method of forming an array of light-emitting diode devices with reduced optical crosstalk.

Background Art

[0002] Light-emitting devices are known to have a wide range of practical applications, including, for example, display technology. In particular, light-emitting diode (LED) devices are known to have the potential to provide an efficient light source for a wide range of pixel array-based display technologies. The increasing light generation efficiency and extraction of LEDs has led to the supply of high-quality color arrays with multiple applications, along with the production of smaller LEDs (having a smaller emission area) and the integration of LED emitters of different wavelengths. However, in order to provide higher resolution arrays of micro-LED-based pixels, several difficulties arise, particularly with respect to the manufacture and color gamut of such arrays, as the pixel pitch within such arrays is reduced to a very small pitch (e.g., less than 5 μm).

[0003] One particular challenge in reducing the pixel pitch within an array of micro-LED devices is to separate individual light-emitting pixels so that the light emitted by one pixel does not interfere with the light emitted by another pixel within the array. If there is such crosstalk in the light emission between pixels within the array, the resulting array will degrade in terms of the overall quality of the emitted light (including color and contrast).

[0004] For example, in liquid crystal display (LCD) applications, a known technique for reducing optical crosstalk between pixels is to use a "black absorber" to create a matrix surrounding individual pixels within the array pixels. However, black absorbers such as "black resists" (e.g., colored photoresists for black matrices described by Kudo et al, Journal of Photopolymer Science and Technology, Volume 9, Number 1 (1996), 121-130) typically cannot be resolved to less than 10 μm, and thus they are unsuitable for ultra-high resolution micro-LED arrays where the pixel pitch is less than 5 μm.

[0005] Therefore, because the feature size of high-resolution arrays such as micro-LED arrays is very small, significant challenges arise in fabricating arrays to provide relatively low optical crosstalk in high-quality micro-LED devices. [Overview of the Initiative] [Means for solving the problem]

[0006] To mitigate at least some of the problems described above, an array of light-emitting pixels according to the attached claims is provided. Furthermore, a method for forming an array of light-emitting pixels according to the attached claims is provided.

[0007] An array is provided comprising a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels are separated by an organic semiconductor dispersed in a medium, and the organic semiconductor is configured to absorb light of a defined wavelength, thereby reducing optical crosstalk across the medium between at least two of the plurality of light-emitting pixels. Furthermore, the array comprising the plurality of light-emitting pixels is provided A method is provided for forming a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels are separated by an organic semiconductor dispersed in a medium, and the organic semiconductor is configured to absorb light of a defined wavelength, thereby reducing optical crosstalk across the medium between at least two of the plurality of light-emitting pixels.

[0008] Advantageously, high-resolution arrays with improved color contrast and color gamut can be provided.

[0009] Preferably, at least two of the multiple light-emitting pixels are separated by a distance of 2 μm or less, and preferably 1 μm or less.

[0010] Advantageously, ultra-high-resolution arrays of light-emitting pixels are provided, enabling improved displays that are particularly suitable for applications that benefit from high-resolution arrays, such as augmented reality applications, where the display is typically formed in close proximity to the user.

[0011] Preferably, at least two of the multiple light-emitting pixels are each a microlight-emitting diode (LED) device (for example, an LED device formed on a microscale as understood by those skilled in the art, wherein the light-emitting surface of the microLED is 100 μm 2 The following order of magnitude is included, and the pixel pitch of the microLED array is 10 μm or less.

[0012] Advantageously, micro-LED devices are efficient light sources that form an efficient array of light-emitting pixels with reduced energy consumption and increased light output compared to other light sources.

[0013] Preferably, the system includes an optical conversion layer in which at least one of a plurality of light-emitting pixels is arranged to receive input light having a primary peak wavelength and convert the input light into output light having a different primary peak wavelength.

[0014] Advantageously, the photoconversion layer enables the use of highly efficient LEDs, such as blue light-emitting nitride epitaxially grown crystalline semiconductor devices used as injection sources for the conversion layer, thereby allowing the use of the most efficient LEDs while reducing the need to implement different types of LEDs in the array.

[0015] Preferably, the organic semiconductor is a conjugated organic semiconductor comprising a plurality of conjugated structures, preferably the organic semiconductor is an organic semiconductor, and more preferably the plurality of conjugated structures comprises a core and arms.

[0016] Advantageously, such organic semiconductors can be adapted to provide functionality that enables the efficient fabrication of structures with smaller features than those in the art, while also allowing them to be implemented using standard semiconductor manufacturing techniques.

[0017] Preferably, at least two of the multiple conjugated structures have different functional properties.

[0018] Advantageously, multifunctionality means that the organic semiconductor can be implemented in the color conversion layer to provide high-quality, fast-response downconversion of the input light wavelength. Beneficially, multifunctionality allows the organic semiconductor to be tuned to absorb light of multiple wavelengths, thereby providing an efficient absorption layer that facilitates shorter pixel pitches within the array of emitting pixels.

[0019] Preferably, the array comprises a further organic semiconductor configured to absorb light of a further defined wavelength different from the defined wavelength.

[0020] Advantageously, light of specific wavelengths is absorbed by different organic semiconductors, thereby extending the range of undesirable wavelengths that contribute to optical crosstalk between light-emitting pixels.

[0021] Preferably, the organic semiconductor is configured to absorb light of a defined range of wavelengths, including a defined wavelength.

[0022] Advantageously, a range of light such as visible light is absorbed, thereby helping to reduce optical crosstalk between the light-emitting pixels and resulting in an improvement in color emission from the array.

[0023] Preferably, the medium is at least one of a resin and a polymer medium.

[0024] Advantageously, the resin and the polymer provide a medium in which the organic semiconductor is dispersed while enabling efficient processing using known semiconductor manufacturing tools in an economical (time and cost) manner.

[0025] Preferably, the array is a high-resolution micro-LED array having a pixel pitch of less than 10 μm, preferably less than 4 μm.

[0026] Advantageously, the use of an organic semiconductor in a high-resolution array of light-emitting pixels makes it possible to reduce optical crosstalk at a scale that has particularly advantageous applications that benefit from such high resolution.

[0027] Preferably, the plurality of light-emitting pixels each have a light-emitting surface of 100 μm 2 or less, preferably 16 μm 2 or less.

[0028] Advantageously, by reducing the pixel pitch, not only can closer pixels be achieved, but also smaller light-emitting surfaces can be produced, thereby improving the overall emission from the high-resolution array of light-emitting pixels while maintaining color integrity.

[0029] A further aspect of the present invention will become apparent from the description and the appended claims.

[0030] The detailed description of embodiments of the present invention is described as a mere example while referring to the drawings.

Brief Description of the Drawings

[0031] [Figure 1A] A cross-sectional view of the three light-emitting pixels is shown. [Figure 1B] A plan view of the array of light-emitting pixels is shown. [Figure 2] This shows the absorption spectrum of a material containing organic semiconductors. [Figure 3] This shows emission spectra passing through materials of different thicknesses, including organic semiconductors. [Modes for carrying out the invention]

[0032] As described above, downscaling arrays of light-emitting diode (LED) devices to produce high-resolution micro-LED arrays with associated microscale light-emitting pixels introduces difficulties related to optical crosstalk between light-emitting pixels within the array, and therefore results in reduced light purity associated with the light-emitting pixels and decreased contrast between light-emitting pixels compared to arrays formed from larger features (e.g., longer pixel pitch and / or conventionally larger LED devices). The structures and methods described with reference to Figures 1A to 3 provide arrays of light-emitting pixels with reduced optical crosstalk, enabling the supply of high-resolution micro-LED arrays with improved color gamut and contrast.

[0033] Figure 1A shows a cross-sectional view 100 of the three light-emitting pixels 116a, 116b, and 116c. Complementary A CMOS backplane 102 is shown, on which arrays of micro-LEDs 104a, 104b, and 104c are provided. The CMOS backplane 102 is configured to work with micro-LEDs 104a, 104b, and 104c to selectively control the light emission from the array of micro-LEDs. The three micro-LEDs 104a, 104b, and 104c are shown in Figure 1A. The micro-LEDs 104a, 104b, and 104c are nitride-based epitaxial crystalline semiconductor LEDs configured to emit light having a primary peak wavelength of blue (approximately 450 nm). To provide a red-green-blue (RGB) multicolor display, the blue light emitted by micro-LEDs 104a, 104b, and 104c is converted using a color conversion layer formed on the micro-LEDs 104a, 104b, and 104c.

[0034] The overview 100 in Figure 1A shows a first blue micro-LED 104a on which a transparent resin 112 is deposited. A protective passivation layer 114 is deposited on top of the transparent resin 112. The protective layer 114 transmits visible light and forms at least a portion of the light-emitting surface associated with the micro-LED 104a. The micro-LED 104a, the transparent resin 112, and the protective layer 114 form a first light-emitting pixel 116a. The transparent resin 112 is used to process the protective layer 114 so that it is uniformly distributed across different light-emitting pixels in the array of light-emitting pixels, whereas in further embodiments, an alternative or additional layer may be used instead of the transparent resin 112. In further embodiments, the transparent resin 112 is omitted if color conversion of light from the associated light-emitting diode device is not used.

[0035] A second blue micro-LED 104b is also shown, on which a color conversion layer 108 is formed, configured to convert light from the micro-LED 104b such that input light having a primary blue peak wavelength is converted to a primary red wavelength. A passivation protective layer 114 is present on the color conversion layer 108. The protective layer 114 transmits visible light and forms at least a portion of the light-emitting surface associated with the micro-LED 104b. The micro-LED 104b, color conversion layer 108, and protective layer 114 form a second light-emitting pixel 116b.

[0036] A third micro-LED 104c is also shown, configured to emit light having a primary peak wavelength of blue (approximately 450 nm). A color conversion layer 110, different from the color conversion layer 108 associated with the second micro-LED 104b, is provided on the third blue micro-LED 104c. The second color conversion layer 110 is configured to receive input light from the third micro-LED 104c and convert it from light having a primary peak wavelength of blue light to light having a primary peak wavelength of green light. A passivation layer, which functions as a protective layer 114, is present on the color conversion layer 110. The protective layer 114 transmits visible light and forms at least a portion of the light-emitting surface associated with the micro-LED 104b. The micro-LED 104a, the color conversion layer 110, and the protective layer 114 form a third light-emitting pixel 116c.

[0037] The color conversion layers 108 and 110 described with respect to Figure 1A include a medium in which an organic semiconductor is dispersed. It is known that the downconversion of organic semiconductors can be tuned to achieve target physical properties. Particularly advantageous, organic semiconductors can achieve specific values ​​for ionization potential or electron affinity, absorption and emission properties, charge transport properties, phase behavior, solubility, and processability. Typically, the organic semiconductor is a conjugated organic semiconductor comprising multiple conjugated structures. In the embodiment, such a conjugated structure includes a core and arms. The functionality of these components of the organic semiconductor is tuned to yield specific characteristics.

[0038] For example, polymers are discussed in Acc.Chem.Res 2019,52,1665~1674 and J.Mater.Chem.C,2016,4,11499. The tunable polymers include conjugated organic semiconductors comprising multiple conjugated structures. These are typically organic semiconductors. Such structures can be formed to include a core and arms. The multiple conjugated structures can be formed to have different functional properties, such as different absorption and / or emission characteristics.

[0039] Referring to the color conversion layers 108 and 110 in Figure 1A, the organic semiconductors in these layers are configured to absorb the blue light received from their respective LEDs 104b and 104c. The organic semiconductors are then further configured to emit light at different converted wavelengths. For example, one light-emitting pixel 116b is configured to emit red light from the color conversion layer 108 after absorbing blue light from the micro-LED 104b. Another pixel 116c is configured to emit green light from the color conversion layer 110 after absorbing blue light from the micro-LED 104c. Advantageously, the use of organic semiconductors allows for the implementation of thin color conversion layers, which facilitates miniaturization of the LEDs. While the color conversion layers 108 and 110 described with reference to Figure 1A are arranged to absorb and emit light at specific wavelengths, those skilled in the art will understand that in further embodiments, different combinations and configurations of light wavelength conversion may be used, either as alternatives or additions, to provide different arrays of light-emitting pixels.

[0040] LED104a, 104b, and 104c are 10μm 2The blue micro-LEDs are epitaxially grown as a monolithic array having the following primary light-emitting surface. In further embodiments, as an alternative or additional, LEDs 104a, 104b, and 104c are associated with a CMOS backplane 102, for example, using a horizontal transport (pick and place) method. The blue micro-LEDs 104a, 104b, and 104c are nitride-based epitaxially grown compound crystalline semiconductor LEDs. In further embodiments, other LEDs, such as other III-V or II-VI based materials, are used. In further embodiments, alternative or additional LEDs of different sizes and shapes are implemented. Advantageously, LEDs 104a, 104b, and 104c are monolithically grown, thereby providing a high-quality material with excellent uniformity and efficiency without the need to transport individual LED devices. Advantageously, the monolithic LED array is coupled to a backplane 102 to allow control of the individual LEDs 104a, 104b, and 104c within the monolithic array. LEDs 104a, 104b, and 104c are grown as part of a monolithic array of LEDs using metal-organic chemical vapor deposition (MOCVD). In further embodiments, alternative and / or additional techniques are used to form LEDs 104a, 104b, and 104c as part of a monolithic array, such as molecular beam epitaxy (MBE) and other suitable deposition / growth techniques. In further embodiments, other additional and / or alternative semiconductor manufacturing and processing techniques are used to provide a monolithic array of LEDs 104a, 104b, and 104c.

[0041] An infill 106 is provided between each of the light-emitting pixels 116a, 116b, and 116c formed by the combination of micro-LEDs, with or without the presence of a color conversion layer. The infill 106 is formed by dispersing an organic semiconductor in a medium and patterning or depositing the medium between the light-emitting pixels to form the matrix of the infill 106. As described above with reference to the color conversion layers 108 and 110, the organic semiconductor is tuned to produce certain properties. The organic semiconductor dispersed to form the infill 106 is configured to absorb light of a defined wavelength. While the infill 106 has been described in relation to a medium in which the organic semiconductor is configured to absorb light of a defined wavelength, in further embodiments the medium includes a further organic semiconductor configured to absorb light of a further defined wavelength different from the defined wavelength.

[0042] In the embodiment shown in Figure 1A, the infill 106 is configured to absorb visible light for wavelengths within a defined range. Advantageously, the light-emitting pixels 116a, 116b, and 116c The infill 106 is formed between the light-emitting pixels 116a, 116b, and 116c such that the light emitted by the respective associated micro-LEDs 104a, 104b, and 104c is absorbed at the periphery of each of the light-emitting pixels 116a, 116b, and 116c surrounded by the infill 106. Advantageously, the infill 106 forms a matrix around the light-emitting pixels 116a, 116b, and 116c, restricting the emission from the light-emitting pixels to the light-emitting surface associated with each of the light-emitting pixels. Beneficially, the use of the passivation protective layer 114 fills the light-emitting structure (formed from the micro-LEDs and color conversion layer) so that the light emitted by each light-emitting pixel is restricted laterally, thereby aiding the contrast between the light-emitting pixels and the resulting color gamut of the array of light-emitting pixels.

[0043] Figure 1B shows a plan view 100' of the array of pixels in a micro-LED array. The matrix of infill 106 surrounding the pixels 116 is shown. Each pixel 116 corresponds to one of the combinations of micro-LEDs 104a, 104b, 104c and color conversion layers 108, 110 or transparent resin 112 as described with reference to Figure 1A, and in Figure 1B, the blue, green, and red light-emitting pixels 116a, 116b, 116c as described with reference to Figure 1A are shown among the other light-emitting pixels 116. Although the light-emitting pixels 116a, 116b, 116c in Figures 1A and 1B are shown in a specific arrangement, in further embodiments, the array of light-emitting pixels may include any number of light-emitting pixels, along with any suitable light-emitting surface associated with each of the light-emitting pixels, in any suitable arrangement. The infill 106 is shown surrounding each individual pixel, but in further embodiments, the infill 106 may, as an alternative or additional measure, surround a pixel aggregate according to the structure in which the infill 106 is used, while separating at least two pixels to reduce optical crosstalk.

[0044] Each light-emitting pixel 116 has a light-emitting surface corresponding to the planar area of ​​the pixel 116. In the planar view, the pixels are shown as square, but in further embodiments, the planar shape of the pixels may differ, either as an alternative or additional feature. For example, a pixel 116 may have a hexagonal light-emitting surface. In further embodiments, the pixels 116 may be grouped together.

[0045] In the embodiment, advantageously, the arrays of micro-LEDs 104a, 104b, and 104c are fabricated using a minimum number of processing steps to provide a transparent resin 112, color conversion layers 108, 110, and an additional protective layer 114. For example, such fabrication involves simultaneously depositing the protective layer 114 on each light-emitting pixel structure. Once the array is provided, the formation of the infill 106 is carried out, although in further embodiments, the infill 106 is formed at any suitable stage in the formation of the array of light-emitting pixels.

[0046] Beneficially, the infill 106 is formed from a photosensitive material. The photosensitive material includes a medium in which an organic semiconductor is dispersed. The organic semiconductor is configured to absorb light of a first predefined wavelength. In further embodiments, the organic semiconductor is also configured to absorb light of a second predefined wavelength, which is different from the first predefined wavelength. In further embodiments, additionally or alternatively, the medium in which the organic semiconductor is dispersed can be defined in different ways, for example, by using thermal curing to solidify the medium once it is formed around the light-emitting pixels in an array of light-emitting pixels.

[0047] The absorption spectrum 200 of a photosensitive material containing an organic semiconductor, which is used as infill 106 for Figures 1A and 1B, is shown in Figure 2. In Figure 2, the absorption spectrum 200 of a photosensitive material containing an organic semiconductor dispersed in the photosensitive material is shown. The level of absorption is shown on the y-axis 204 and plotted as a function of wavelength on the x-axis 202.

[0048] A first absorption peak, 206, is shown at 350 nm. This absorption peak 206 corresponds to the absorption of ultraviolet light by the photosensitive material medium in which the organic semiconductor is dispersed. The absorption of light at 350 nm allows the medium in which the organic semiconductor is dispersed to be cured as part of a photolithographic patterning technique. A second absorption peak, 208, is also shown, extending to a predefined wavelength range greater than 420 nm. The organic semiconductor is tuned so that the second absorption peak 208 absorbs visible light generated by the light-emitting pixel 116.

[0049] Advantageously, the bonding of the organic semiconductor having the absorption characteristics shown in Figure 2 with the medium in which the organic semiconductor is dispersed provides a precise and efficient material for providing the infill 106 described with respect to Figures 1A and 1B.

[0050] In particular, the medium in which the organic semiconductor is dispersed is arranged to harden in response to the absorption of ultraviolet light, for example, light at 350 nm. Therefore, ultraviolet (UV) light is used to solidify the material in which the organic semiconductor is dispersed. However, the medium itself does not react to light of other wavelengths.

[0051] Advantageously, this simplifies the manufacturing process used in mainstream semiconductor equipment. For example, when a standard lithographic tool is used to cure a resin or polymer, the absorption peak 206 at 350 nm shown in Figure 2 means that the UV exposure within the photolithographic tool is completely absorbed, thus improving processing control.

[0052] The further absorption at visible wavelengths, explained by the second absorption peak in Figure 2, means that the photosensitive material, including the medium and organic semiconductor, is suitable for defining separate pixels in a micro-LED array of pixels. Advantageously, using an organic semiconductor that can absorb in the visible spectrum means that the requirements for processing the medium and the functionality of the infill as an absorption layer are deconvoluted.

[0053] The use of such organic semiconductors for absorbing visible light is illustrated in Figure 3. Figure 3 shows emission spectra 300 through photosensitive materials of different thicknesses containing organic semiconductors configured to absorb blue light. The intensity of light emitted from a blue LED is measured on the vertical axis 304, and the wavelength is measured on the horizontal axis 302. As can be seen in Figure 34, the intensity peak 306 for a bare blue LED is considerably higher than the intensity peak 308 for a bare blue LED with one layer of organic semiconductor. It is also higher than the intensity peak 310 for two layers of organic semiconductors, and the intensity peak 310 for two layers of organic semiconductors is similarly higher than the intensity peak 312 for three layers of organic semiconductors. In the embodiment of Figure 3, each of the organic semiconductor layers is approximately 200 nm thick. Thus, it can be seen that high absorption of visible light is achieved with relatively thin layers of material. In further embodiments, organic semiconductor layers of different thicknesses are used to reduce optical crosstalk by absorbing light emitted from light-emitting pixels, thereby changing, for example, the functionality and / or density of the organic semiconductor dispersed in the medium, and / or by reducing crosstalk using multiple different organic semiconductors dispersed in the medium.

[0054] Therefore, crosstalk between separate light-emitting pixels can be achieved using even very thin layers of photosensitive material, including a medium and an organic semiconductor. Conveniently, such materials can be fabricated on a small scale.

[0055] Micro-LEDs 104a, 104b, and 104c are blue-emitting micro-LEDs. In further embodiments, different micro-LEDs with different primary peak wavelengths of emission are used as alternatives or additions.

[0056] Advantageously, the use of organic semiconductors dispersed in the medium in both the infill 106 and the color conversion layers 108 and 110 allows for close-packed pixels, in which case the pixels are separated by a distance of 2 μm or less, preferably 1 μm or less, providing a high-resolution micro-LED array with reduced optical crosstalk between pixels.

Claims

1. A high-resolution microlight-emitting diode array comprising a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels each have a microlight-emitting diode device and are separated by a first organic semiconductor dispersed in a medium at a distance of 1 μm or less, and the first organic semiconductor is configured to absorb light of a first wavelength, thereby reducing optical crosstalk across the medium between the at least two of the plurality of light-emitting pixels. The optical conversion layer includes at least one of the plurality of light-emitting pixels, which is arranged to receive input light having a primary peak wavelength and convert the input light into output light having a different primary peak wavelength. A high-resolution microlight-emitting diode array comprising a second organic semiconductor configured to convert the input light into output light, wherein the light conversion layer is configured to convert the input light into output light.

2. The high-resolution microlight-emitting diode array according to claim 1, wherein the first organic semiconductor is a conjugated organic semiconductor comprising a plurality of conjugated structures, preferably the plurality of conjugated structures comprising a core and an arm.

3. The high-resolution microlight-emitting diode array according to claim 2, wherein at least two of the plurality of conjugated structures have different functional characteristics with respect to light.

4. A high-resolution microlight-emitting diode array according to any one of claims 1 to 3, further comprising an organic semiconductor configured to absorb light of a second wavelength different from the first wavelength.

5. The high-resolution microlight-emitting diode array according to any one of claims 1 to 4, wherein the medium is at least one of resin and polymer media.

6. The high-resolution microlight-emitting diode array according to any one of claims 1 to 5, wherein the high-resolution microlight-emitting diode array has a pixel pitch of less than 10 μm, preferably less than 4 μm.

7. Each of the aforementioned multiple light-emitting pixels is 100 μm ２ The following is preferably 16 μm ２ A high-resolution microlight-emitting diode array according to any one of claims 1 to 6, having a light-emitting surface that is less than [amount missing].

8. A method for forming a high-resolution microlight-emitting diode array comprising a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels each have a microlight-emitting diode device and are separated by a first organic semiconductor dispersed in a medium at a distance of 1 μm or less, and the first organic semiconductor is configured to absorb light of a first wavelength, thereby reducing optical crosstalk across the medium between the at least two of the plurality of light-emitting pixels. The optical conversion layer includes at least one of the plurality of light-emitting pixels, which is arranged to receive input light having a primary peak wavelength and convert the input light into output light having a different primary peak wavelength. A method comprising a second organic semiconductor configured to convert the input light into output light, wherein the light conversion layer includes the second organic semiconductor configured to convert the input light into output light.

9. The method according to claim 8, wherein the first organic semiconductor is a conjugated organic semiconductor comprising a plurality of conjugated structures, preferably the plurality of conjugated structures comprising a core and an arm.

10. The method according to claim 9, wherein at least two of the plurality of conjugated structures have different functional properties with respect to light.

11. The method according to any one of claims 8 to 10, wherein the high-resolution microlight-emitting diode array includes a further organic semiconductor dispersed in the medium, and the further organic semiconductor is configured to absorb light of a second wavelength different from the first wavelength.

12. The method according to any one of claims 8 to 11, wherein the medium is at least one of resin and polymer media.

13. The method according to any one of claims 8 to 12, wherein the high-resolution microlight-emitting diode array is a high-resolution microlight-emitting diode array having a pixel pitch of less than 10 μm, preferably less than 4 μm.

14. Each of the aforementioned multiple light-emitting pixels is 100 μm ２ The following is preferably 16 μm ２ The method according to any one of claims 8 to 13, having a light-emitting surface that is less than [amount missing].

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