Polymorphs and Synthetic Process of KRAS-G12D Aza-Tetracyclic Oxazepine Inhibitors

Abstract

Polymorphs and crystalline forms of 2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizine-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4-oxa-3,10a,11,13,14-pentaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3-methyl-4-(trifluoromethyl)aniline (compounds of chemical formula (I)), pharmaceutical compositions thereof, and methods of using them, for example, in the treatment of cancer are provided herein. A synthesis process for the preparation of a compound of formula (I) (i.e., 2-fluoro-5-((5S,5aS,6S,9R)-1-fluoro-12-(((2R,7aS)-2-fluorotetrahydro-1H-pyrrolizine-7a(5H)-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5H-4-oxa-3,10a,11,13,14-pentaza-6,9-methanonaphtho[1,8-ab]heptalen-2-yl)-3-methyl-4-(trifluoromethyl)aniline) is also provided herein. Compounds useful for the synthesis thereof (e.g., compounds of formulas (A), (B), (By), and (H)) and a synthesis process relating thereto are also provided.

Description

Technology Field Cross-reference regarding related applications This application claims the priority and benefit of U.S. provisional applications No. 63 / 602,285 and 63 / 602,244 filed on November 22, 2023. The disclosures of each of the said applications are incorporated herein by reference in their entirety. Technology field The technology described in this specification generally relates to polymorphs of aza-tetracyclic oxazepine inhibitors of KRAS-G12D. The technology described in this specification also generally relates to synthesis processes of small organic molecules having pharmaceutical activity, and more specifically to the synthesis of aza-tetracyclic oxazepine inhibitors of KRAS-G12D. Background Technology background Ras is a small GTP-binding protein that functions as a nucleotide-dependent switch for key growth signaling pathways. In response to extracellular signals, Ras is catalyzed by guanine nucleotide exchange factor (GEF), specifically the SOS1 protein, to become GDP-bound (Ras GDP GTP-bound (Ras) from the ) state GTP Switches to the ) state. Active Ras GTP It mediates various growth-promoting functions through direct interactions with effector factors, including Raf, PI3K, and Ral guanine nucleotide dissociation stimulants. The intrinsic GTPase activity of Ras subsequently hydrolyzes GTP to GDP, thereby terminating Ras signaling. Ras GTPase activity can be further accelerated by interactions with GTPase-activated proteins (GAPs), including the neurofibromin 1 tumor suppressor. Mutant Ras possesses reduced GTPase activity, which prolongs the activated state and promotes Ras-dependent signaling and cancer cell survival or growth. Mutations in Ras that interact with GAP or affect the ability to convert GTP back to GDP cause prolonged protein activation, resulting in long-term signals that direct cells to continue growing and dividing. Because these signals trigger cell growth and division, hyperactive RAS signaling can ultimately lead to cancer. Mutations in one of the three major isoforms of the RAS gene (HRas, NRas, or KRas) are common occurrences in human oncology. Among the three Ras isoforms (K, N, and H), KRas is the most frequently mutated. The most common KRas mutations are found in residues G12 and G13 and residue Q61 of the P-loop. G12D is a frequent mutation in the KRas gene (from glycine-12 to aspartate). In cancer, mutations in Ras are associated with a poor prognosis. In mice, tumors shrink as a result of the inactivation of oncogenic Ras. Therefore, Ras is widely considered a very important oncological target. Compound of formula (I) disclosed in this specification (2-fluoro-5-((5 S ,5a S ,6 S ,9 R )-1-fluoro-12-(((2 R ,7a S )-2-fluorotetrahydro-1 H -Pyrrolizine-7a(5 H )-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5 H -4-Oxa-3,10a,11,13,14-Pentaza-6,9-Methanonaphtho[1,8- ab]Heptalen-2-yl-3-methyl-4-(trifluoromethyl)aniline is an inhibitor of the G12D mutant KRas (KRas-G12D) and is therefore useful for cancer treatment. For a KRas-G12D inhibitor to be a useful therapeutic agent, it must possess an appropriate balance of various characteristics, including affinity and selectivity for KRas-G12D, inhibitory activity, duration of activity, oral bioavailability, tissue distribution, and stability (e.g., shelf life, formulationability, and crystallization potential). An appropriate balance of these characteristics can lead to KRas-G12D inhibitors with improved efficacy, safety, tolerability, patient compliance, manufacturing efficiency, etc. Identification and isolation of crystalline forms can facilitate the manufacture and development of KRas-G12D inhibitors with appropriate characteristics (including bioavailability, chemical stability, thermal stability, solubility, hygroscopicity, particle size, yield, impurity content during crystallization, drying characteristics, grinding characteristics, and stability during purification). However, significant complexity exists regarding the identification and selection of solid forms of pharmaceutical compounds. Currently, there is no reliable predictability regarding the number and properties of solid forms, or their practicality as crystalline solids for use as active pharmaceutical ingredients. Furthermore, it is known that different crystalline forms of small molecules may, in some instances, possess different levels of bioavailability resulting from different solubility under specific conditions (e.g., within the human body). Nevertheless, it is impossible to predict how many polymorphs of a given small molecule exist, under what conditions they are formed, or what their properties will be. Mixtures of single-component crystalline materials arise due to polymorphism, and it is impossible to predict whether a crystalline form of the compound even exists, let alone a method to successfully prepare it in advance. For example, Cruz-Cabesa et al. , “Facts and fictions about polymorphism,” Chem. Soc. Rev. See , 44, 8619 (2015). Also see Jones et al., 2006, “Pharmaceutical Cocrystals: An Emerging Approach to Physical Property Enhancement,” MRS Bulletin 31 See :875-879 (currently, it is generally impossible to computationally predict the number of observable polymorphs even for the simplest molecules). Therefore, the compound of formula (I) (2-fluoro-5-((5 S ,5a S ,6 S ,9 R )-1-fluoro-12-(((2 R ,7a S )-2-fluorotetrahydro-1 H -Pyrrolizine-7a(5 H )-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5 H -4-Oxa-3,10a,11,13,14-Pentaza-6,9-Methanonaphtho[1,8- ab There is still a need to identify and isolate the stable crystalline form of ]heptalen-2-yl-3-methyl-4-(trifluoromethyl)aniline. Additionally, specific exemplary processes for producing the compound of formula (I) are disclosed in U.S. Provisional Application No. 63 / 343,959, filed May 19, 2022, and International Application No. PCT / US2023 / 022914, filed May 19, 2023, the entire contents of which are incorporated herein by reference. However, there is often a need to devise a synthesis process that provides a product in an efficient manner, for example, with an acceptable amount of undesirable impurities, and in appropriate yield using environmentally sustainable steps or inexpensive and reasonably available reagents. Accordingly, the synthesis process of the compound of formula (I) of the present disclosure advantageously provides one or more beneficial aspects such as energy-efficient process conditions, convenient reagent selection, complexity of required unit operations, and scalability. summation Solutions to the above problems and other problems in the relevant technical field are provided in this specification. More specifically, the present disclosure is of formula (I) (I) provides various polymorphs of the compound (including crystalline forms), as well as pharmaceutical compositions thereof, and a method of using said crystalline forms and pharmaceutical compositions, for example, in cancer treatment. In one embodiment, the present disclosure provides a crystalline form of a compound of formula (I). In some embodiments, the crystalline form is an anhydrous crystalline form (i.e., It is an anhydrous form. In some embodiments, the anhydrous crystalline form is form J, form O, form U, form AC, or form AG. In some embodiments, the anhydrous crystalline form is form J. In some embodiments, the anhydrous crystalline form is form O. In some embodiments, the anhydrous crystalline form is form U. In some embodiments, the anhydrous crystalline form is form AC. In some embodiments, the anhydrous crystalline form is form AG. In some embodiments, the crystalline form is a hydrated crystalline form (i.e., a hydrate). In some embodiments, the hydrated crystalline form is form D, form G, form N, form Q, form AA, form AK, or form AL. In some embodiments, the hydrated crystalline form is form D. In some embodiments, the hydrated crystalline form is form G. In some embodiments, the hydrated crystalline form is form N. In some embodiments, the hydrated crystalline form is form Q. In some embodiments, the hydrated crystalline form is form AA. In some embodiments, the hydrated crystalline form is form AK. In some embodiments, the hydrated crystalline form is form AL. In some embodiments, the crystalline form is a solvated crystalline form (i.e., (solvate). In some embodiments, the solvated crystalline form is 2-methyl-tetrahydrofuran (2-MeTHF), acetonitrile (ACN), tetrahydrofuran (THF), dimethylformamide (DMF), 1,4-dioxane, dimethylacetamide (DMAc), isopropanol (IPA), methyl tert - Butyl ether (MTBE), ethyl acetate (EtOAc), acetone, isopropyl acetate (IPAc), chloroform (CHCl3), dichloromethane (DCM), cyclopentyl methyl ether (CPME), anisole, diisopropyl ether, toluene, N -methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), 1,2-propanediol, 1,2-dimethoxyethane or 2- tert- It is a butoxyethanol solvate. In some embodiments, the solvated crystalline form is the form A, form C / S, form E, form F, form H, form I, form L, form M, form R, form T, form V, form W, form X, form Y, form Z, form AD, form AE, form AH, form AI, form AJ, form AP, form AQ, or form AR described herein. In some embodiments, the solvated crystalline form is form A. In some embodiments, the solvated crystalline form is form C / S. In some embodiments, the solvated crystalline form is form E. In some embodiments, the solvated crystalline form is form F. In some embodiments, the solvated crystalline form is form H. In some embodiments, the solvated crystalline form is form I. In some embodiments, the solvated crystalline form is form L. In some embodiments, the solvated crystalline form is form M. In some embodiments, the solvated crystalline form is form R. In some embodiments, the solvated crystalline form is form T. In some embodiments, the solvated crystal form is form V. In some embodiments, the solvated crystal form is form W. In some embodiments, the solvated crystal form is form X. In some embodiments, the solvated crystal form is form Y. In some embodiments, the solvated crystal form is form Z. In some embodiments, the solvated crystal form is form AD. In some embodiments, the solvated crystal form is form AE. In some embodiments, the solvated crystal form is form AH. In some embodiments, the solvated crystal form is form AI. In some embodiments, the solvated crystal form is form AJ. In some embodiments, the solvated crystal form is form AP. In some embodiments, the solvated crystal form is form AQ. In some embodiments, the solvated crystal form is form AR. In some embodiments, the crystal form is a metastable crystal form. In some embodiments, the metastable crystal form is form B / AF, form K, form AB, form AM, form AN, form AO, or form P as described herein. In some embodiments, the metastable crystal form is form B / AF. In some embodiments, the metastable crystal form is form K. In some embodiments, the metastable crystal form is form AB. In some embodiments, the metastable crystal form is form AM. In some embodiments, the metastable crystal form is form AN. In some embodiments, the metastable crystal form is form AO. In some embodiments, the metastable crystal form is form P. In one embodiment, the present disclosure provides a pharmaceutical composition comprising a crystalline form of the present disclosure and at least one pharmaceutically acceptable excipient. In one aspect, the present disclosure provides a method for treating cancer of a subject, comprising the step of administering to the subject a therapeutically effective amount of the crystalline or pharmaceutical composition described herein. In some embodiments, the subject is a human. In one embodiment, the present disclosure provides a method for controlling the activity of a KRas mutant protein, comprising reacting the mutant protein with a crystalline or pharmaceutical composition described herein. In one embodiment, the present disclosure provides a method for inhibiting the proliferation of a cell population, comprising contacting the cell population with a crystalline or pharmaceutical composition described herein. In one embodiment, the present disclosure provides a method for inhibiting tumor metastasis in a subject, comprising the step of administering to the subject a therapeutically effective amount of the crystalline or pharmaceutical composition described herein. In some embodiments, the subject is a human. The present disclosure also includes a chemical formula Compound of (I) (i.e.) , 2-fluoro-5-((5 S ,5a S ,6 S ,9 R)-1-fluoro-12-(((2 R ,7a S )-2-fluorotetrahydro-1 H -Pyrrolizine-7a(5 H )-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5 H -4-Oxa-3,10a,11,13,14-Pentaza-6,9-Methanonaphtho[1,8- ab ]Heptalen-2-yl-3-methyl-4-(trifluoromethyl)aniline) provides a synthesis process for manufacturing heptalen-2-yl-3-methyl-4-(trifluoromethyl)aniline, as well as a compound useful for the synthesis and a synthesis process related thereto. In one embodiment, the present disclosure is a chemical formula (I) provides a process for preparing the compound of (I). In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C); b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing the compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E); d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G); e) A step of preparing a compound of formula (Ja) by reacting a compound of formula (G) with a compound of formula (Ha): (Ha) (Ja) (Here, Boc is tert -butyloxycarbonyl); and f) A step of preparing a compound of formula (I) by reacting a compound of formula (Ja) with an acidic reagent. In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C); b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing the compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E); d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G); e) A step of preparing a compound of formula (J) by reacting a compound of formula (G) with a compound of formula (H): (H) (J) (where PMB is para-methoxybenzyl); and f) A step of preparing a compound of formula (I) by reacting a compound of formula (J) with an acidic reagent. In another aspect, the present disclosure is a chemical formula (A) provides a process for preparing a compound. In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (Ax) by reacting a compound of formula (Aw) with TMPMgCl·LiCl and BrCF2CF2Br: (Aw) (Ax); b) A step of preparing a compound of formula (Ay) by reacting a compound of formula (Ax) with NHS and EDC: (Ay); c) Compound of chemical formula (Ay) S - Step of preparing a compound of chemical formula (Az) by reacting with methylisothiourea: (Az); and d) A step of preparing the compound of formula (A) by reacting the compound of formula (Az) with NMI and DMA. In one embodiment, the present disclosure is a chemical formula (B) provides a process for preparing the compound of (B). In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (Bw) by reacting a compound of formula (Bv) with benzyl bromide: (Bv) (Bw); b) Compound of chemical formula (Bw) s - Step of preparing a mixture of compounds of formula (Bx') and compounds of formula (Bx'') by reacting with BuLi, TMEDA, and acetaldehyde: (Bx') (Bx''); c) A step of preparing a compound of formula (By) by reacting a mixture of the compound of formula (Bx') and the compound of formula (Bx'') with H2, Pd / C and D(+)-10-camphosulfonic acid: (By); d) A step of preparing a compound of formula (Bz) by reacting a compound of formula (By) with (Boc)2O: (Bz); and e) A step of preparing a compound of formula (B) by reacting a compound of formula (Bz) with a basic reagent. In additional embodiments, a process for preparing a compound of formula (H) is provided herein. In some embodiments, the process comprises the following steps: a) A step of preparing a compound of formula (Hv) by reacting a compound of formula (Hu) with NBS: (Hu) (Hv); b) a step of preparing a compound of formula (Hw) by reacting a compound of formula (Hv) with hydrogen in a platinum / vanadium / carbon catalyst; (Hw); c) A step of preparing a compound of formula (Hx) by reacting a compound of formula (Hw) with PMBCl: (Hx); d) A step of preparing a compound of formula (Hy) by reacting a compound of formula (Hx) with NIS: (Hy); e) A step of preparing a compound of formula (Hz) by reacting a compound of formula (Hy) with MeO2CCF2SO2F in the presence of CuI: (Hz); and f) Compound of chemical formula (Hz) n - A step of preparing a compound of chemical formula (H) by reacting with BuLi and B(OiPr)3. In one aspect, the present disclosure provides a compound useful for the synthesis of a compound of formula (I). In some embodiments, the compound is of formula (I). It is a compound of (A). In some embodiments, the compound is a chemical formula It is a compound of (B). In some embodiments, the compound is a chemical formula It is a compound of (H). In some embodiments, the compound is a chemical formula It is a compound of (By). Brief explanation of the drawing Fig. 1This shows an exemplary X-ray powder diffraction (XRPD) pattern of type J. Fig. 2 represents an exemplary XRPD pattern for form O. Fig. 3 It shows an exemplary XRPD pattern for shape U. Fig. 4 represents an exemplary XRPD pattern for the AC shape. Fig. 5A represents an exemplary XRPD pattern for the morphology AG. Fig. 5B Figure 1 shows exemplary thermogravimetric analysis (TGA) (top) and differential scanning calorimetry (DSC) (bottom) thermal analysis figures of the form AG. Fig. 5C represents an exemplary DVS plot of shape AG. Fig. 5D represents an exemplary SEM micrograph of the morphology AG. Fig. 5E This shows an exemplary superimposed XRPD pattern of the morphology AG obtained after heating at 80 ℃ and 51% RH for 21 days (top); after heating at 70 ℃ and 75% RH for 28 days (middle); and at ambient temperature and RH (bottom). Fig. 5F This shows an exemplary superimposed XRPD pattern of the morphological AG obtained after slurrying in water for 8 days (top), after slurrying in water for 3 days (middle), and without slurrying in water (bottom). Fig. 6 It shows an exemplary XRPD pattern for form D. Fig. 7 Figure 1 shows an exemplary superimposed XRPD pattern of shape G obtained before (top) and after (bottom) drying. Fig. 8 represents an exemplary XRPD pattern for form N. Fig. 9 represents an exemplary XRPD pattern for form Q. Fig. 10 This represents an exemplary XRPD pattern for morphology AA. Fig. 11 This represents an exemplary XRPD pattern for the form AK. Fig. 12 represents an exemplary XRPD pattern for the form AL. Fig. 13 It represents an exemplary XRPD pattern for form A. Fig. 14represents an exemplary XRPD pattern for the form C / S. Fig. 15 represents an exemplary XRPD pattern for form E. Fig. 16 It shows an exemplary XRPD pattern (above) and a calculated / predicted XRPD pattern of form F (below) superimposed. Fig. 17 represents an exemplary XRPD pattern for form H. Fig. 18 It represents an exemplary XRPD pattern for form I. Fig. 19 represents an exemplary XRPD pattern for form L. Fig. 20 represents an exemplary XRPD pattern for form M. Fig. 21 represents an exemplary XRPD pattern for form R. Fig. 22 represents an exemplary XRPD pattern for form T. Fig. 23 It shows an exemplary XRPD pattern for form V. Fig. 24 represents an exemplary XRPD pattern for shape W. Fig. 25 represents an exemplary XRPD pattern for form X. Fig. 26 It represents an exemplary XRPD pattern for shape Y. Fig. 27 It shows an exemplary XRPD pattern for form Z. Fig. 28 This represents an exemplary XRPD pattern for morphological AD. Fig. 29 Figure 2 shows an exemplary XRPD pattern for the AE morphology. This XRPD pattern is for a wet sample (obtained from toluene solvent); the dry sample is less crystalline and has an additional peak at 9.59 ± 0.2 °2θ. Fig. 30 This represents an exemplary XRPD pattern for the morphology AH. Fig. 31 It represents an exemplary XRPD pattern for form AI. Fig. 32 represents an exemplary XRPD pattern for morphology AJ. Fig. 33 This shows an exemplary superimposed XRPD pattern of the morphological AP obtained before (top) and after (bottom) drying. Fig. 34represents an exemplary XRPD pattern for morphology AQ. Fig. 35 represents an exemplary XRPD pattern for AR form. Fig. 36 This shows an exemplary XRPD pattern for the morphology B / AF. Fig. 37 represents an exemplary XRPD pattern for form K. Fig. 38 It shows an exemplary XRPD pattern for form AB. Fig. 39 represents an exemplary XRPD pattern for morphological AM. Fig. 40 represents an exemplary XRPD pattern for form AN. Fig. 41 It shows an exemplary XRPD pattern for morphological AO. Fig. 42 This shows an exemplary superimposed XRPD pattern of the morphological AP obtained before (top) and after (bottom) drying. do 43 This shows the X-ray powder diffraction (XRPD) pattern of the representative crystalline form of the compound of chemical formula (I), referred to as form AG. do 44 This shows the thermogravimetric analysis (TGA) (top) and differential scanning calorimetry (DSC) (bottom) thermal analysis diagrams of a representative crystalline form of the compound of chemical formula (I) referred to as form AG. do 45 represents the dynamic vapor adsorption (DVS) plot of the representative crystalline form of the compound of chemical formula (I), referred to as form AG. do 46 (1S,6S,9R,9aS)-1-methylhexahydro-1H,3H-6,9-epiminooxazolo[3,4-a]azepine-3-one (1S)-(+)-CSA salt shows the XRPD pattern of the representative crystal form. Specific details for implementing the invention details Unless otherwise defined, all technical and scientific terms used herein have the same meaning as generally understood by a person skilled in the art to which the invention pertains. For example, see Singleton et al., DICTIONARY OF MICROBIOLOGY AND MOLECULAR BIOLOGY 2nd ed., J. Wiley & Sons (New York, NY 1994); Sambrook et al., MOLECULAR CLONING, A LABORATORY MANUAL, Cold Springs Harbor Press (Cold Springs Harbor, NY 1989). Any method, apparatus, and material similar or equivalent to those described herein may be used in the practice of the invention. The following definitions are provided to aid in understanding specific terms frequently used in this specification and are not intended to limit the scope of the invention. All references mentioned in this specification are incorporated by reference in their entirety. The term "in this specification" means the entire application. It should be understood that any embodiment described herein (including embodiments described only in the embodiments) may be combined with one or more other embodiments of the present disclosure, including different aspects of the disclosure and those described in different parts of the specification (including embodiments described only in the embodiments), unless expressly disclaimed or inappropriate. Combinations of embodiments are not limited to specific combinations claimed through any number of dependent claims. For example, any claim dependent on another claim may be modified to include one or more limitations found in any other claim dependent on the same independent claim. Where elements are presented as a list, for example in the form of a Markush group, each subgroup of elements is also disclosed, and any element(s) may be removed from the group. It is specifically considered that any limitations discussed in relation to one embodiment provided herein may apply to any other embodiment provided herein. Additionally, any crystalline or pharmaceutical composition described herein may be used in any method provided herein, and any method provided herein may be used to prepare or use any crystalline or pharmaceutical composition described herein. It should be understood that while the disclosures of this specification provide the enumerated embodiments, they are not intended to limit the crystalline forms, pharmaceutical compositions, and methods described herein to these embodiments. On the contrary, the disclosures are intended to include all alternatives, modifications, and equivalents that may be included within the scope of the disclosures. All publications, patents, and published patent applications mentioned in this application are expressly incorporated by reference into this specification. In the event of a conflict, this specification, including specific definitions, shall prevail. Additionally, any specific embodiment of this disclosure that falls within the prior art may be expressly excluded from any one or more claims. Since such embodiment is considered to be known to a person skilled in the art, it may be excluded even if the exclusion is not explicitly indicated in this specification. Any specific embodiment of this disclosure may be excluded from any claim for any reason, regardless of whether prior art exists. References to ranges of values ​​in this specification are intended merely to serve as a brief method of individually referring to each individual value within the range, including the endpoint, unless otherwise specified in this specification, and each individual value is included in this specification as individually referred to in this specification. All methods described in this specification may be performed in any appropriate order unless otherwise indicated in this specification or clearly contradictory in the context. Any and all examples or exemplary language provided in this specification (e.g., “e.g., for example”) are intended merely to better describe embodiments and do not limit the scope of the claims unless otherwise specified. No language in this specification shall be interpreted as representing any essential unclaimed element. Unless otherwise indicated or clearly contradictory in the context, the terms “a,” “an,” “the,” and similar designations used herein in the context of describing elements (particularly in the context of the following claims) should be interpreted to include both singular and plural forms. Unless otherwise specified, the terms “about” and “about” as used herein mean a dose, amount, or weight percentage recognized by a person skilled in the art as providing a pharmacological effect equivalent to that obtained from a specific dose, amount, or weight percentage when referring to a dose, amount, or weight percentage of the components of a composition or formulation. The equivalent dose, amount, or weight percentage may be within 30%, 20%, 15%, 10%, 5%, 1%, or less of the specified dose, amount, or weight percentage. In certain embodiments, the equivalent dose, amount, or weight percentage is within 10%, within 5%, or within 1% of the specified dose, amount, or weight percentage. As used herein, unless otherwise specified, the terms “about” and “approximately” indicate that when referring to a numerical value or a range of values ​​(e.g., XRPD peak values) used in the characterization of a specific solid form described herein, the value or range of values ​​may deviate from a given value to a reasonable degree to a person skilled in the art while still describing the solid form. In one embodiment, the value of the XRPD peak position may vary by up to ±0.1° 2θ (or ±0.05° 2θ) while describing a specific XRPD peak. Additionally, as used herein, unless otherwise specified, the terms “about” and “approximately” indicate that when referring to a numerical value or a range of values, the value or range of values ​​may deviate from a given value to a degree that a person skilled in the art would consider reasonable while describing the process. The term "or" as used in this specification should be understood to mean "and / or" unless otherwise specified in the context. Throughout this specification, variations of the word “comprise,” “comprises,” or “comprising” will be understood to mean the inclusion of a specified integer (or component) or group of integers (or components), but not the exclusion of any other integer (or component) or group of integers (or components). As used herein, the term “comprising” means “comprising but not limited.” “Comprising” and “comprising but not limited” are used interchangeably. Accordingly, it will be understood that these terms mean the inclusion of a specified integer (or component) or group of integers (or components), but not the exclusion of any other integer (or component) or group of integers (or components). Throughout the specification, where a composition is described as having, including, or comprising (or variations thereof) a specific component, the composition is also considered to be essentially composed of or may be composed of the listed component. Similarly, where a method or process is described as having, including, or comprising a specific process step, the process is also essentially composed of or may be composed of the listed processing step. Furthermore, it should be understood that the order of steps or the order in which specific actions are performed is not important as long as the compositions and methods described herein remain operable. Additionally, two or more steps or actions may be performed simultaneously. Any one of the process steps or sequences disclosed and / or claimed in this specification may be carried out under an inert gas atmosphere, more specifically under nitrogen or argon. Additionally, the method and process of the present invention may be carried out as a semi-continuous or continuous process, more preferably as a continuous process. In addition, many of the process steps and sequences described herein can be telescoped. Generally, telescoped reactions are carried out in a single reactor without the need to isolate intermediates. Compounds described or used in the processes described herein may contain one or more asymmetric carbon atoms. Accordingly, compounds may exist as diastereomers, enantiomers, or mixtures thereof. For the synthesis of compounds, racemics, diastereomers, or enantiomers may be used as starting materials or intermediates. A mixture of specific diastereomer compounds may be separated by chromatography or crystallization methods, or one or more specific diastereomers may be concentrated. Similarly, a mixture of enantiomers may be separated or enantiomerically concentrated using the same technology or other technologies known in the art. Each of the asymmetric carbon or nitrogen atoms may be in an R or S configuration, and both configurations are considered herein. In structures shown herein where the stereochemistry of any specific chiral atom is not specified, all stereoisomers are considered and included. Where stereochemistry is specified by a solid wedge or dashed line indicating a specific arrangement, the corresponding stereoisomer is so specified and defined. Unless otherwise specified, where a solid wedge or dashed line is used, relative stereochemistry is intended. The term "stereoisomer" refers to compounds that have the same chemical composition but differ in the spatial arrangement of atoms or groups. Stereoisomers include diastereomers, enantiomers, rotationally hindered isomers, and dimorphs. The term "chiral" refers to a molecule having non-superimposition properties of its mirror image partner, whereas the term "achiral" refers to a molecule capable of superimposing its mirror image partner. The term "diastereoisomer" refers to stereoisomers that have two or more chiral centers and whose molecules are not mirror images of each other. Diastereoisomers possess different physical properties, such as melting point, boiling point, spectral characteristics, or biological activity. Mixtures of diastereoisomers can be separated using high-resolution analytical procedures, such as chromatography (HPLC) and electrophoresis. The term "enantiomer" refers to two stereoisomers of a compound that are mirror images of each other but cannot be superimposed. The term "rotationally hindered isomer" refers to two isoforms resulting from rotational hindrance to a single bond, where the stereodeformation barrier to rotation can be high enough to allow the isolation of each isoform. The stereochemical definitions and conventions used herein generally follow SP. Parker, Ed., McGraw-Hill Dictionary of Chemical Terms (1984) McGraw-Hill Book Company, New York; and Eliel, E. and Wilen, S., "Stereochemistry of Organic Compounds," John Wiley & Sons, Inc., New York, 1994. Many organic compounds exist in an optically active form; that is, they possess the ability to rotate the plane of plane-polarized light. In the description of optically active compounds, the prefixes D and L or R and S Is It is used to indicate the absolute arrangement of a molecule around chiral center(s). The prefixes d and l, or (+) and (-), are used to specify the rotational sign of plane-polarized light by the compound, where (-) or l indicates that the compound is levorotatory. Compounds with the prefixes (+) or d are levorotatory. For a given chemical structure, these stereoisomers are identical except that they are mirror images of each other. Certain stereoisomers may also be referred to as enantiomers, and a mixture of such isomers is often called an enantiomer mixture. A 50:50 mixture of enantiomers is referred to as a racemic mixture or racemate, which can occur in chemical reactions or processes where stereoselectivity or stereospecificity is absent. The terms "racemic mixture" and "racemate" refer to an equimolar mixture of two enantiomer species that is optically inactive. As used herein, the term “solid form” refers to a physical form other than a liquid or gaseous state. The solid form may be a crystalline form or a mixture thereof. In certain embodiments, the solid form may be a liquid crystal. The solid form may be a crystalline form as defined herein. As used herein, the terms "crystalline form" and "crystalline shape" are used interchangeably; and different characteristics (e.g., Distinguishes crystals having different XRPD patterns and / or different DSC scan results; and refers to a crystalline solid form. In certain embodiments, the crystalline form of the compound described herein may substantially be free of amorphous solids and / or other crystalline forms. In certain embodiments, the crystalline form of the compound described herein may contain one or more amorphous solids and / or other crystalline forms in an amount of less than about 1%, less than about 2%, less than about 3%, less than about 4%, less than about 5%, less than about 6%, less than about 7%, less than about 8%, less than about 9%, less than about 10%, less than about 15%, less than about 20%, less than about 25%, less than about 30%, less than about 35%, less than about 40%, less than about 45%, or less than about 50% by weight. In certain embodiments, the crystalline form described herein is pure. In certain embodiments, the crystalline form of the compound described herein may be about 99%, 98%, 97%, 96%, 95%, 94%, 93%, 92%, 91%, or 90% pure. As used herein, the terms “amorphous” or “amorphous solid” refer to a solid form that is substantially non-crystalline when determined by X-ray diffraction. In particular, the term “amorphous solid” describes a disordered solid form, that is, a solid form lacking long-range crystalline order. In certain embodiments, the amorphous solid of the compound described herein may substantially be free of other amorphous solids and / or crystalline forms. In certain embodiments, the amorphous solid may be pure. In certain embodiments, the amorphous solid of the compound described herein may be about 99%, 98%, 97%, 96%, 95%, 94%, 93%, 92%, 91%, or 90% pure. The terms “anhydrous” and “anhydrous” are used interchangeably herein and, when applied to a compound or a crystalline form of a compound, refer to a solid state in which the compound does not contain structural water or other solvent molecules within the crystal lattice. In some embodiments, the form does not contain water or other solvent molecules at levels detectable by standard methods and instruments used by a person skilled in the art. In some embodiments, the anhydrous form exhibits < 1% w / w weight loss when evaluated by thermogravimetric analysis up to 150 °C. The anhydrous form may absorb water when stored under humid conditions, for example, at 80% relative humidity (RH). In some embodiments, the anhydrous form absorbs less than 1% w / w of moisture when stored at 25 °C / 80% RH. As used herein, the terms “solvent” and “solvated” refer to the crystalline form provided herein that further comprises stoichiometric or non-stoichiometric amounts of solvent bonded by non-covalent intermolecular forces (e.g., hydrogen bonding). If the solvent is water, the solvent is a “hydrate.” If the solvent is not water, the crystalline form may be described as a solvent of the said solvent. For example, if the solvent is ethanol, the crystalline form may be described as an ethanol solvent. As used herein, the term “metastable” generally refers to a crystalline form of a compound that converts into one or more other thermodynamically more stable form(s) over time. In some examples, the metastable crystalline form is more soluble but less stable than the form(s) being converted. When referring to peaks in the XRPD pattern of the crystalline form of the compound of formula (I), the term "characteristic peak" refers to a specific set of peaks in which the values ​​of 2θ over the range of 0° to 40° are uniquely assigned to one of the crystalline forms of the compound of formula (I). Unless otherwise defined, the XRPD pattern is obtained using a Cu Kα X-ray source. In the context of the polymorphic forms or crystalline forms disclosed herein, the term "stable" refers to the stability of the polymorphic form or crystalline form with respect to heat and / or humidity and / or time and / or another polymorphic form or crystalline form. As used herein, unless otherwise specified, “pure,” i.e., crystalline, substantially free of other crystalline or amorphous solids or other compounds, contains about 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, 0.4%, 0.3%, 0.2%, 0.1%, 0.05%, or less than 0.01% by weight. Detection of other solid forms may be made, for example, by diffraction analysis, thermal analysis, elemental combustion analysis, and / or spectroscopic analysis. Detection of other compounds may be made, for example, by mass spectrometry analysis, spectroscopic analysis, thermal analysis, elemental combustion analysis, and / or chromatographic analysis. The term "pharmaceuticalally acceptable" refers to a diluent, excipient, or carrier of a formulation that is compatible with other ingredients of the formulation and is not harmful to the recipient. The terms “active ingredient,” “active agent,” “active substance,” “preparation,” “drug,” and “therapeutic agent” refer to a substance administered to a subject, either alone or in combination with one or more pharmaceutically acceptable excipients, to treat, prevent, or improve one or more symptoms of a pathological condition, disorder, or disease. As used in this specification, "reagent" refers to a substance that is consumed in a chemical reaction or promotes the progress of a chemical reaction. The "yield" of each reaction described in this specification is expressed as a percentage of the theoretical yield. "Administering" or "administration of" a preparation to a subject may be performed using any of the various methods known to a person skilled in the art. For example, the preparation may be administered intravenously, intra-arterially, intradermally, intraperitoneally, subcutaneously, ocularly, sublingually, orally (by ingestion), intranasally (by inhalation), intraspinally, intracerebrally, and transdermally (by absorption, e.g., through a skin canal). The compound or preparation may also be appropriately introduced by rechargeable or biodegradable polymer devices or other devices, e.g., patches and pumps, or by formulations that provide extended, delayed, or controlled release of the compound or preparation. Administration may also be performed, for example, once, multiple times, and / or over one or more extended periods. In some embodiments, administration includes both direct administration, including self-administration, and indirect administration, including drug prescription. For example, as used herein, a physician who instructs a patient to self-administer a drug or to have a drug administered by another person, and / or a physician who provides a prescription for a drug to the patient, is administering the drug to the patient. Where a method is part of a therapeutic regimen comprising two or more agents or modes of treatment, the present disclosure assumes that the agents may be administered at the same or different times and through the same or different routes of administration. The appropriate method of administering a substance, compound, or agent to a subject will also depend, for example, on the age of the subject, whether the subject is active or inactive at the time of administration, whether the subject has a cognitive impairment at the time of administration, the degree of impairment, and the chemical and biological properties of the compound or agent (e.g., solubility, digestibility, bioavailability, stability, and toxicity). As used herein, the terms “co-administration,” “administered in combination,” and their grammatical equivalents comprise administering two or more formulations to an animal, including humans, such that both formulations and / or their metabolites are present in the subject simultaneously. Co-administration includes simultaneous administration of separate compositions, administration of separate compositions at different times (i.e., sequential administration), or administration of a composition in which both formulations are present. Disease, disorder, and pathological condition are used interchangeably in this specification. As used herein, "mutant KRas-mediated disease," etc., refers to a disease described herein (e.g., cancer described herein) having symptoms as presented herein or requiring treatment, which is wholly or partially related, or otherwise correlated, with the result of the function of mutant KRas activity as described herein. In one such embodiment, mutant KRas is KRas G12D am. The terms “cancer,” “cancerous,” “neoplasm,” “tumor,” and related terms are used interchangeably herein and generally refer to or describe physiological conditions in mammals characterized by uncontrolled cell growth. “Tumor” comprises one or more cancerous cells. Examples of cancer include carcinoma, blastoma, sarcoma, seminoma, glioblastoma, melanoma, leukemia, and myeloid or lymphoid malignancies. More specific examples of such cancer include squamous cell carcinoma (e.g., epithelial squamous cell carcinoma) and lung cancer, including small cell lung cancer, non-small cell lung cancer (“NSCLC”), adenocarcinoma of the lung, and squamous carcinoma of the lung. Other cancers include cutaneous, keratosquamoma, follicular carcinoma, hairy cell leukemia, cervical, pharynx (oral), lip, tongue, mouth, salivary gland, esophagus, larynx, hepatocellular, gastric, stomach, gastrointestinal tract, small intestine, large intestine, pancreas, cervical, ovary, liver, bladder, liver cancer, breast, colon, rectum, colorectal, genitourinary, biliary tract, thyroid, nipple, hepatic, endometrium, uterus, salivary gland, kidney, prostate, testis, vulva, peritoneum, anus, penis, bone, multiple myeloma, B-cell lymphoma, diffuse large B-cell lymphoma (DLBCL), central nervous system, brain, head and neck, Hodgkin's, and related metastases. Other examples of neoplastic disorders include myeloproliferative disorders such as polycythemia vera, essential thrombocythemia, myelofibrosis such as primary myelofibrosis, and chronic myeloid leukemia (CML). As used herein, the term "chemotherapy agent" refers to a preparation useful for the treatment of a given disorder, e.g., cancer or inflammatory disorder. Examples of chemotherapy agents are well known in the art. Additionally, chemotherapy agents include pharmaceutically acceptable salts, acids, or derivatives of any chemotherapy agent, as well as combinations of two or more of these. As used herein, “subject,” “individual,” or “patient” refers to a vertebrate, and these terms are used interchangeably herein. In certain embodiments, the vertebrate is a mammal. Mammals include, but are not limited to, farm animals (e.g., cattle), sports animals, pets (e.g., guinea pigs, cats, dogs, rabbits, and horses), primates, mice, and rats. In certain embodiments, the mammal is a human. In an embodiment comprising the step of administering a substance to a patient, the patient typically requires it. In one embodiment, the subject is a human who has cancer or is at risk of developing it. As used herein, "effective dose" or "therapeutic effective dose" is at least the minimum amount required to achieve the measurable improvement or prevention of cancer described herein. In this specification, the effective dose may vary depending on factors such as the patient's disease state, age, sex, and weight, and the ability of the agent to induce a desired response in the patient. The effective dose is also an amount in which the therapeutically beneficial effect outweighs any toxic or adverse effect of the treatment. Beneficial or desirable results include the elimination or reduction of risk, reduction in severity, delay in the onset of the disease (including biochemical, histological, and / or behavioral symptoms of the disease, its complications, and intermediate pathological phenotypes that appear during the development of the disease), reduction of one or more symptoms of the disease, improvement in the quality of life of those suffering from the disease, reduction in the dose of other agents required to treat the disease, enhancement of the effect of other agents such as through targeting, delay in disease progression and / or extension of survival. In some embodiments, the effective dose of the drug results in a reduction in the number of cancer cells; a reduction in tumor size; inhibition (i.e., slowing or halting) of cancer cell invasion into peripheral organs; and inhibition (i.e., slowing or halting) of tumor metastasis; It may have the effect of inhibiting tumor growth (i.e., slowing or stopping); and / or alleviating one or more symptoms associated with the disorder. The effective dose may be administered in a single or more doses. As used herein, the terms “treating” and “treatment” refer to clinical interventions designed to alter the natural course of a patient or cell being treated during a clinical pathology process. Desired therapeutic effects include a reduction in the rate of disease progression, improvement or alleviation of the disease state, and remission or improved prognosis. For example, a patient is successfully “treated” if one or more symptoms associated with the cancer described herein are alleviated or eliminated, including but not limited to a reduction (or destruction) in the proliferation of cancer cells, a reduction in symptoms of the disease, an improvement in the quality of life of the person suffering from the disease, a reduction in the dosage of other drugs required to treat the disease, and / or an extension of the patient’s survival. As used herein, the term “delay of progression” of a disease refers to delaying, hindering, slowing, delaying, stabilizing, and / or postponing the development of cancer as described herein. The duration of such delay may vary depending on the history of the cancer and / or the patient being treated. As would be obvious to a person skilled in the art, a sufficient or significant delay may include prevention in that the cancer does not develop or recur in the patient. As used herein, the terms “inhibition” and “reduction” or any variation thereof include any measurable reduction or complete inhibition to achieve a desired result. For example, compared to normal, there may be a decrease, a reduction in activity of about 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99% or more, or any range induced therein. The terms "antagonist" and "inhibitor" are used interchangeably and refer to agents capable of inhibiting the biological function of a target protein by inhibiting the activity or expression of a protein, such as a mutant form of KRas. Accordingly, the terms "antagonist" and "inhibitor" are defined in the context of the biological role of the target protein. A preferred antagonist in this specification is also specifically included within this definition a substance that specifically interacts (e.g., binds) to the target but inhibits the biological activity of the target protein by interacting with other members of the signaling pathway to which the target protein is a member. The preferred biological activity inhibited by the antagonist is related to the development, growth, or spread of a tumor. The term "package insert" is used to refer to an instruction manual typically included in the commercial package of a therapeutic product, which contains information regarding indications, usage, dosage, administration, contraindications, and / or warnings concerning the use of the therapeutic product. A solid form of a compound of formula (I) as described in this specification, a pharmaceutical composition comprising such solid form, and a method of using such solid form of a compound of formula (I) are disclosed in this specification. Polymorphic forms and crystal forms The present disclosure provides a solid form of a compound of formula (I): (I). The compound of chemical formula (I) is 2-fluoro-5-((5 S ,5a S ,6 S ,9 R )-1-fluoro-12-(((2 R ,7a S )-2-fluorotetrahydro-1 H -Pyrrolizine-7a(5 H )-yl)methoxy)-5-methyl-5a,6,7,8,9,10-hexahydro-5 H-4-Oxa-3,10a,11,13,14-Pentaza-6,9-Methanonaphtho[1,8- ab ]Heptalen-2-yl)-3-methyl-4-(trifluoromethyl)aniline may also be known. In some embodiments, the present disclosure describes various polymorphs of the compound of formula (I) (i.e. , Provides a deterministic form. While not intended to be bound by any specific theory, solid forms can be characterized by physical properties such as stability, solubility and dissolution rate, density, compressibility, hardness, shape, fragmentation, adhesiveness, water absorption, electrical properties, thermal behavior, solid-state reactivity, physical stability, and chemical stability, which influence specific processes (e.g., yield, filtration, washing, drying, grinding, mixing, tableting, fluidity, dissolution, formulation, and freeze-drying) to create specific solid forms suitable for the manufacture of solid formulations. These properties can be determined using specific analytical chemistry techniques, including solid-state analytical techniques (e.g., X-ray diffraction, microscopy, spectroscopy, and thermal analysis). The solid forms described herein are, for example, single-crystal X-ray diffraction, X-ray powder diffraction (XRPD), microscopy (e.g., scanning electron microscopy (SEM)), thermal analysis (e.g., Differential scanning calorimetry (DSC), dynamic vapor adsorption (DVS), thermogravimetric analysis (TGA), and high-temperature stage microscopy), spectroscopy (e.g., It can be characterized by various methods including infrared, Raman, and solid-state nuclear magnetic resonance, high-performance liquid chromatography (HPLC), ultra-high-performance liquid chromatography (UHPLC), and proton nuclear magnetic resonance. Techniques for characterizing crystal forms include, for example, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), X-ray powder diffraction (XRPD), single-crystal X-ray diffraction, vacuum spectroscopy, for example, infrared (IR) and Raman spectroscopy, solid-state and solution nuclear magnetic resonance (NMR) spectroscopy ( 1It includes 1H NMR and 1F NMR), scanning electron microscopy (SEM), electronic crystallography and quantitative analysis, particle size analysis (PSA), surface area analysis, dynamic vapor adsorption (DVS) analysis, solubility studies, and dissolution studies. Crystalline types are generally characterized by X-ray powder diffraction (XRPD). The XRPD pattern of reflection (peaks, typically represented as 2-theta in Fig. 2) is generally considered the fingerprint of a specific crystalline type. The relative intensity of XRPD peaks can vary depending on the sample preparation technique, crystal size distribution, filters, sample mounting procedures, and the specific equipment used. In some cases, depending on the instrument type or setup, more (i.e., new peaks) or fewer (i.e., peaks may disappear) peaks may be present in the XRPD pattern. In some cases, any specific peak in the XRPD pattern may appear as a single, double, triple, quadruple, or multiply line depending on the instrument type or setup, instrument sensitivity, measurement conditions, and / or the purity of the crystalline type. In some cases, any specific peak in the XRPD may appear as a symmetrical shape or, for example, an asymmetrical shape with shoulders. Additionally, instrument deviations and other factors may affect the 2-theta value. A person skilled in the art who understands these variations can identify or confirm the characteristics or properties defining a specific crystal form using XRPD as well as other known physicochemical techniques. A portion of the full spectrum of the XRPD pattern may be sufficiently unique to characterize a specific polymorph. That is, it may be possible to significantly distinguish between two or more polymorphs of the same compound by evaluating the presence or absence of a few characteristic peaks, such as three, four, five, six, seven, eight, or more. The number and identity of these characteristic peaks will vary depending on the polymorph. XRPD spectra are generally obtained using a Cu Kα X-ray source (which may also be referred to as the Cu Kα wavelength). The purity of the solid form provided in this specification can be determined by standard analytical methods such as thin-layer chromatography (TLC), gel electrophoresis, gas chromatography, ultra-high performance liquid chromatography (UHPLC), and mass spectrometry (MS). Anhydrous crystalline form In some embodiments, the solid form of the compound of formula (I) is a solid form corresponding to form J, form O, form U, form AC, form AG, form D, form G, form N, form Q, form AA, form AK, form AL, form A, form C / S, form E, form F, form H, form I, form L, form M, form R, form T, form V, form W, form X, form Y, form Z, form AD, form AE, form AH, form AI, form AJ, form AP, form AQ, form AR, form B / AF, form K, form AB, form AM, form AN, form AO, form P, or a mixture thereof. In some embodiments, the solid form of the compound of formula (I) is form J. In some embodiments, the solid form of the compound of formula (I) is form O. In some embodiments, the solid form of the compound of formula (I) is form U. In some embodiments, the solid form of the compound of formula (I) is form AC. In some embodiments, the solid form of the compound of formula (I) is form AG. In some embodiments, the solid form of the compound of formula (I) is form D. In some embodiments, the solid form of the compound of formula (I) is form G. In some embodiments, the solid form of the compound of formula (I) is form N. In some embodiments, the solid form of the compound of formula (I) is form Q. In some embodiments, the solid form of the compound of formula (I) is form AA. In some embodiments, the solid form of the compound of formula (I) is form AK. In some embodiments, the solid form of the compound of formula (I) is form AL. In some embodiments, the solid form of the compound of formula (I) is form A. In some embodiments, the solid form of the compound of formula (I) is form C / S. In some embodiments, the solid form of the compound of formula (I) is form E. In some embodiments, the solid form of the compound of formula (I) is form F. In some embodiments, the solid form of the compound of formula (I) is form H.In some embodiments, the solid form of the compound of formula (I) is form I. In some embodiments, the solid form of the compound of formula (I) is form L. In some embodiments, the solid form of the compound of formula (I) is form M. In some embodiments, the solid form of the compound of formula (I) is form R. In some embodiments, the solid form of the compound of formula (I) is form T. In some embodiments, the solid form of the compound of formula (I) is form V. In some embodiments, the solid form of the compound of formula (I) is form W. In some embodiments, the solid form of the compound of formula (I) is form X. In some embodiments, the solid form of the compound of formula (I) is form Y. In some embodiments, the solid form of the compound of formula (I) is form Z. In some embodiments, the solid form of the compound of formula (I) is form AD. In some embodiments, the solid form of the compound of formula (I) is form AE. In some embodiments, the solid form of the compound of formula (I) is form AH. In some embodiments, the solid form of the compound of formula (I) is form AI. In some embodiments, the solid form of the compound of formula (I) is form AJ. In some embodiments, the solid form of the compound of formula (I) is form AP. In some embodiments, the solid form of the compound of formula (I) is form AQ. In some embodiments, the solid form of the compound of formula (I) is form AR. In some embodiments, the solid form of the compound of formula (I) is form B / AF. In some embodiments, the solid form of the compound of formula (I) is form K. In some embodiments, the solid form of the compound of formula (I) is form AB. In some embodiments, the solid form of the compound of formula (I) is form AM. In some embodiments, the solid form of the compound of formula (I) is form AN. In some embodiments, the solid form of the compound of formula (I) is form AO. In some embodiments, the solid form of the compound of formula (I) is form P.In some embodiments, the solid form of the compound of formula (I) is a mixture of any two or more of the aforementioned forms. In some embodiments, the solid form is anhydrous crystalline (i.e., It is an anhydrous form. In some embodiments, the anhydrous crystalline form is form J, form O, form U, form AC, or form AG as described herein. In some embodiments, the anhydrous crystalline form is form J. In some embodiments, the anhydrous crystalline form is form O. In some embodiments, the anhydrous crystalline form is form U. In some embodiments, the anhydrous crystalline form is form AC. In some embodiments, the anhydrous crystalline form is form AG. Form J In some embodiments, the compound of formula (I) is form J, which is in a solid form. In some embodiments, the compound of formula (I) is form J, which is in an anhydrous crystalline form. In some embodiments, the anhydrous crystalline form is form J, which is substantially characterized by an XRPD pattern as shown in FIG. 1. In some embodiments, form J is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 1. In some embodiments, form J is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 1. The representative XRPD peak of type J is as follows: Table 1 In some embodiments, a solid form of a compound of formula (I) is provided herein, wherein the solid form is form J. In some embodiments, the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of about 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ± 0.2, 15.6 ± 0.2, 9.4 ± 0.2, 18.2 ± 0.2, 8.42 ± 0.2, 13.7 ± 0.2, 8.8 ± 0.2 and 19.7 ± 0.2. In some embodiments, the solid form features an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of 2θ of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2. In some embodiments, the solid form features an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is a form J characterized by a TGA thermal analysis showing a weight loss of about 2.6% up to 180°C. In some embodiments, the anhydrous crystalline form is a form J characterized by a DSC thermal analysis including at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. In some embodiments, the anhydrous crystalline form is a form J characterized by a DSC thermal analysis including endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. In some embodiments, the anhydrous crystalline form is a form J characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 1; b. a TGA thermograph showing a weight loss of about 2.6% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. In some embodiments, the anhydrous crystalline form is a form J characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 1; b. a TGA thermograph showing a weight loss of about 2.6% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. In some embodiments, the anhydrous crystalline form is a form J described herein. In some embodiments, form J is pure. In some embodiments, form J is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form J is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form O In some embodiments, the anhydrous crystalline form is form O, substantially characterized by an XRPD pattern as shown in FIG. 2. In some embodiments, form O is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 2. In some embodiments, form O is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 2. Representative XRPD peaks of form O are as follows: Table 2 In some embodiments, a solid form of a compound of formula (I) is provided herein, wherein the solid form is form O. In some embodiments, form O, which is the solid form, features an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of about 15.1 ± 0.2, 19.7 ± 0.2, 9.3 ± 0.2, 18.8 ± 0.2, 7.0 ± 0.2, 15.4 ± 0.2, 8.5 ± 0.2, 24.8 ± 0.2, 21.4 ± 0.2, and 15.9 ± 0.2 2θ. In some embodiments, form O is at least one peak selected from the group consisting of about 15.1 ± 0.2, 19.7 ± 0.2, and 9.3 ± 0.2 2θ; and features an XRPD diffraction pattern comprising at least one, at least two, at least three, at least four, or at least five additional peaks selected from the group consisting of about 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2 Fig. 2θ. In some embodiments, form O is XRPD peaks at about 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 Fig. 2θ; and features an XRPD diffraction pattern comprising at least three additional peaks selected from the group consisting of about 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.2 Fig. 2θ. In some embodiments, form O features an XRPD diffraction pattern comprising XRPD peaks at about 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.2 Fig. 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is a form O characterized by a TGA thermal analysis showing a weight loss of about 3.1% up to 180°C. In some embodiments, the anhydrous crystalline form is a form O characterized by a DSC thermal analysis including at least one endothermic peak at about 70 °C or about 195 °C. In some embodiments, the anhydrous crystalline form is a form O characterized by a DSC thermal analysis including endothermic peaks at about 70 °C and about 195 °C. In some embodiments, the anhydrous crystalline form is a form O characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 2; b. a TGA thermal analysis showing a weight loss of about 3.1% up to 180 °C; and c. a DSC thermal analysis including at least one endothermic peak at about 70 °C or about 195 °C. In some embodiments, the anhydrous crystalline form is a form O characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 2; b. a TGA thermal analysis showing a weight loss of about 3.1% up to 180 °C; and c. a DSC thermal analysis including endothermic peaks at about 70 °C and about 195 °C. In some embodiments, the anhydrous crystalline form is a form O as described herein. In some embodiments, form O is pure. In some embodiments, form O is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form O is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. shape U In some embodiments, the anhydrous crystalline form is form U, which is substantially characterized by an XRPD pattern as shown in FIG. 3. In some embodiments, form U is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 3. In some embodiments, form U is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 3. Representative XRPD peaks of form U are as follows: Table 3 In some embodiments, a solid form of a compound of formula (I) is provided herein, wherein the solid form is form U. In some embodiments, form U, which is the solid form, is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of about 18.1 ± 0.2°, 5.9 ± 0.2°, 18.7 ± 0.2°, 19.2 ± 0.2°, 17.6 ± 0.2°, 22.0 ± 0.2°, 20.4 ± 0.2°, 15.8 ± 0.2°, 17.3 ± 0.2°, and 15.1 ± 0.2° 2θ. In some embodiments, the solid form U features an XRPD diffraction pattern comprising at least three, at least four, at least five, at least six, at least seven, at least eight, or at least nine XRPD peaks selected from the group consisting of about 18.1 ± 0.2°, 5.9 ± 0.2°, 18.7 ± 0.2°, 19.2 ± 0.2°, 17.6 ± 0.2°, 22.0 ± 0.2°, 20.4 ± 0.2°, 15.8 ± 0.2°, 17.3 ± 0.2°, and 15.1 ± 0.2° 2θ. In some embodiments, the solid form U features at least one peak selected from the group consisting of about 18.1 ± 0.2°, 5.9 ± 0.2°, and 18.7 ± 0.2° 2θ; and features an XRPD diffraction pattern comprising at least two, at least three, at least four, or at least five peaks at approximately 19.2 ±0.2°, 17.6 ±0.2°, 22.0 ±0.2°, 20.4 ±0.2°, 15.8 ±0.2°, 17.3 ±0.2°, and 15.1 ±0.2° 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is a form U characterized by a TGA thermal analysis showing a weight loss of about 1.3% up to 190°C. In some embodiments, the anhydrous crystalline form is a form U characterized by a DSC thermal analysis including an endothermic peak at about 205 °C. In some embodiments, the anhydrous crystalline form is a form U characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 3; b. a TGA thermograph showing a weight loss of about 1.3% up to 190 °C; and c. a DSC thermograph including an endothermic peak at about 205 °C. In some embodiments, the anhydrous crystalline form is a form U as described herein. In some embodiments, form U is pure. In some embodiments, form U is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form U is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AC In some embodiments, the anhydrous crystalline form is a form AC characterized substantially by an XRPD pattern as presented in FIG. 4. In some embodiments, the form AC is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 4. In some embodiments, the form AC is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 4. Representative XRPD peaks of the form AC are as follows: Table 4 In some embodiments, a solid form of a compound of formula (I) is provided herein, wherein the solid form is form AC. In some embodiments, the solid form AC is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of about 6.0 ± 0.2 degrees, 20.2 ± 0.2 degrees, 15.6 ± 0.2 degrees, 16.8 ± 0.2 degrees, 23.4 ± 0.2 degrees, 15.0 ± 0.2 degrees, 19.2 ± 0.2 degrees, 16.3 ± 0.2 degrees, 23.6 ± 0.2 degrees, and 22.9 ± 0.2 degrees 2θ. In some embodiments, the solid form AC features an XRPD diffraction pattern comprising at least three, at least four, at least five, at least six, at least seven, at least eight, or at least nine XRPD peaks selected from the group consisting of about 6.0 ± 0.2 °, 20.2 ± 0.2 °, 15.6 ± 0.2 °, 16.8 ± 0.2 °, 23.4 ± 0.2 °, 15.0 ± 0.2 °, 19.2 ± 0.2 °, 16.3 ± 0.2 °, 23.6 ± 0.2 °, and 22.9 ± 0.2 ° 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is a type AC characterized by a TGA thermal analysis showing a weight loss of about 2.3% up to 160°C. In some embodiments, the anhydrous crystalline form is a form AC characterized by a DSC thermal analysis including an endothermic peak at about 163 °C. In some embodiments, the anhydrous crystalline form is a form AC characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 4; b. a TGA thermal analysis showing a weight loss of about 2.3% up to 160 °C; and c. a DSC thermal analysis including an endothermic peak at about 163 °C. In some embodiments, the anhydrous crystalline form is a form AC described herein. In some embodiments, the AC in form is pure. In some embodiments, the AC in form is substantially free of other solid forms (e.g., amorphous solid) described herein. In some embodiments, the purity of the AC in form is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AG In some embodiments, the anhydrous crystalline form is a form AG characterized by an XRPD pattern including characteristic peaks at about 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 in Fig. 2θ. In some embodiments, the XRPD pattern further includes at least one additional characteristic peak selected from the group consisting of about 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 in Fig. 2θ. In some embodiments, the XRPD pattern further includes characteristic peaks at about 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 in Fig. 2θ. In some embodiments, the anhydrous crystalline form is an AG characterized by an XRPD pattern including one, two, three, four, five, six, seven, eight, nine, ten, eleven, twelve, thirteen, fourteen, or fifteen characteristic XRPD peaks as presented in Table 39. In some embodiments, the anhydrous crystalline form is a form AG characterized by an XRPD pattern including at least 15 characteristic peaks as presented in Table 39. In some embodiments, the anhydrous crystalline form is a form AG characterized substantially by an XRPD pattern as shown in FIG. 5A. In some embodiments, the anhydrous crystalline form is an AG characterized by an XRPD pattern including one, two, three, four, five, six, seven, eight, nine, ten, eleven, twelve, thirteen, fourteen, or fifteen characteristic XRPD peaks as shown in FIG. 5A. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source.In some embodiments, the AG type features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 6. An additional set of representative XRPD peaks for the AG type is as follows: Table 6 In some embodiments, the morphology is a morphology AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. In some embodiments, the morphology is a morphology AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. In some embodiments, the morphology is a morphology AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. In some embodiments, the morphology is a morphology AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 degrees 2θ and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 degrees 2θ. In some embodiments, the morphology is a peak at approximately 13.1 ± 0.2 ° 2θ and a peak at approximately 19.3 ± 0.2 ° 2θ and 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.The morphology AG is characterized by an XRPD pattern comprising at least one peak selected from the group consisting of 2 ± 0.2 and 10.7 ± 0.2 2θ. In some embodiments, the morphology is characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and a peak at approximately 19.3 ± 0.2 2θ and at least two peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. In some embodiments, the morphology is characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 °2θ and a peak at approximately 19.3 ± 0.2 °2θ and at least three peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 °2θ. In some embodiments, the morphology is a morphology AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 °2θ and a peak at approximately 19.3 ± 0.2 °2θ and at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 °2θ. In another additional embodiment, the morphology comprises at least two peaks selected from the group consisting of approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 °2θ; and 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.A form AG is characterized by an XRPD pattern comprising at least one peak selected from the group consisting of 2° 2θ. In another additional embodiment, the form is a form AG characterized by an XRPD pattern comprising a peak selected from the group consisting of about 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2° 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2° 2θ. In some embodiments, the form is: a peak at about 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2° 2θ; The AG is a form characterized by an XRPD pattern comprising at least two, at least three, at least four, or at least five peaks selected from the group consisting of 2θ, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the form is a form AG characterized by an XRPD pattern including peaks at about 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2 Fig. 2θ and 18.5 ± 0.2 Fig. 2θ. In some embodiments, the XRPD pattern further includes one or more peaks at about 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 Fig. 2θ. In some embodiments, the XRPD pattern further includes two, three, or four additional peaks selected from the group consisting of 2θ at 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2. In some embodiments, the form AG also features < 1% w / w weight loss by thermogravimetric analysis up to 150 °C. In certain embodiments, the form AG also features < 2% w / w weight loss by thermogravimetric analysis up to 180 °C. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the anhydrous crystalline form is a form AG characterized by a TGA thermal analysis showing a weight loss of about 1.1% up to 180 °C. In some embodiments, the anhydrous crystalline form is a form AG characterized by a TGA thermal analysis showing substantially as presented in FIG. 5B. In some embodiments, the form of the compound of formula (I) is a form AG characterized by a TGA thermal analysis showing a weight loss of less than 2% up to 180 °C. In another additional embodiment, the form of the compound of formula (I) is a form AG characterized by a weight loss of < 1% w / w by thermogravimetric analysis up to 150 °C. In some embodiments, the anhydrous crystalline form is a form AG characterized by a DSC thermal analysis including an endothermic peak at about 219 °C. In some embodiments, the anhydrous crystalline form is a form AG characterized substantially by a DSC thermal analysis as shown in FIG. 5B. In some embodiments, the anhydrous crystalline form is substantially a form AG characterized by a dynamic vapor adsorption (DVS) plot as shown in FIG. 5C. In some embodiments, the anhydrous crystalline form is substantially a form AG characterized by a scanning electron microscope (SEM) image as shown in FIG. 5D. In some embodiments, the anhydrous crystalline form is a form AG characterized by two or more of the following: a. an XRPD pattern including characteristic peaks at about 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2 in Fig. 2θ; b. a TGA thermograph showing a weight loss of about 1.1% at 180 °C; c. a DSC thermograph including an endothermic peak at about 219 °C; d. a dynamic vapor adsorption (DVS) plot as substantially as presented in Fig. 5C; and e. a scanning electron microscopy (SEM) image as substantially as presented in Fig. 5D. In some embodiments, the anhydrous crystalline form is a form AG characterized by two or more of the following: a. an XRPD pattern A as substantially as presented in Fig. 5; b. a TGA thermograph as substantially as presented in Fig. 5B; c. a DSC thermograph as substantially as presented in Fig. 5B; d. Substantially a DVS plot as shown in FIG. 5C; and e. a SEM micrograph as shown in FIG. 5D. In some embodiments, the anhydrous crystalline form is the form AG described herein. In some embodiments, form AG is pure. In some embodiments, form AG is substantially free of other solid forms (e.g., amorphous solids) described herein. In some embodiments, the purity of form AG is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. In some embodiments, form AG comprises another form of the compound of formula (I) in less than 5 wt%, less than 4 wt%, less than 3 wt%, less than 2 wt%, less than 1 wt%, less than 0.5 wt%, or less than 0.1 wt%. In some embodiments, the other form of the compound of formula (I) is an amorphous form of the compound of formula (I). In some embodiments, form AG comprises an amorphous form of the compound of formula (I) in less than 5 wt%. In some embodiments, form AG comprises less than 1 weight percent of the amorphous form of the compound of formula (I). In some embodiments, form AG is a white to grayish-white solid. The present specification further provides a method for preparing form AG comprising the steps of: combining a compound of formula (I) with a solvent comprising a C1-C6 alcohol; and crystallizing the compound of formula (I) from the combination, wherein the crystalline compound of formula (I) is form AG. In some embodiments, the compound of formula (I) is combined with a solvent to form a solution, i.e., a liquid mixture substantially free of solids. This combination may be heated, for example, to 30°C to 50°C or about 35°C to 45°C or about 40°C. In some embodiments, the solution is seeded into a slurry of seed crystals of form AG that can be prepared by the method provided herein; in other embodiments, the solution is not seeded. In some embodiments, the solvent comprises ethanol, or methanol, or propanol. In some embodiments, crystallization comprises the step of adding a second solvent in which the compound of formula (I) is less soluble to subsequently form crystals. In some embodiments, the second solvent is a nonpolar solvent, such as C3-C 10 It includes alkanes. In some embodiments, the second solvent is pentane, hexane, or heptane. Although not to be bound by any theory, these non-polar solvents may be useful for reducing the solubility of the compound of formula (I) in alcohols and improving the crystallization yield. In some embodiments, crystallization comprises the steps of: forming a solution of the compound of formula (I) in a solvent comprising at least 80%, at least 90%, at least 95%, or at least 99% of C1-C6 alcohols, such as propanol, ethanol, or methanol; heating the solution to 30°C to 50°C or about 35°C to 45°C or about 40°C; optionally adding a slurry of seed crystals of form AG; and C3-C 10The method comprises the step of adding a second solvent containing an alkane to the solution to produce a form AG (wherein the second solvent is hexane or heptane). In some embodiments, the second solvent is at least 80%, at least 90%, at least 95%, or at least 99% C3-C 10 The alkane is, for example, hexane or heptane. In some embodiments, the second solvent is added such that the final ratio of the first solvent to the second solvent is about 1:2 to 1:6 or about 1:3 to 1:5 or about 1:4. In some embodiments, the method further comprises the step of cooling the mixture, for example, to 15°C to 35°C, or 20°C to 30°C, or 20°C to 25°C or about 23°C. In some embodiments, the solid is isolated, washed, and dried to produce a form of AG with a purity of at least 90%, at least 95%, or at least 98%. Hydrated crystalline form In some embodiments, the solid form is a hydrated crystalline form (i.e., a hydrate). In some embodiments, the hydrated crystalline form is Form D, Form G, Form N, Form Q, Form AA, Form AK, or Form AL as described herein. In some embodiments, the hydrated crystalline form is Form D. In some embodiments, the hydrated crystalline form is Form G. In some embodiments, the hydrated crystalline form is Form N. In some embodiments, the hydrated crystalline form is Form Q. In some embodiments, the hydrated crystalline form is Form AA. In some embodiments, the hydrated crystalline form is Form AK. In some embodiments, the hydrated crystalline form is Form AL. Form D In some embodiments, the hydrated crystalline form is form D, which is substantially characterized by an XRPD pattern as shown in FIG. 6. In some embodiments, form D is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 6. In some embodiments, form D is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 7. Representative XRPD peaks of form D are as follows: Table 7 In some embodiments, the morphology is morphology D, which features an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 8.7 ± 0.2, 7.5 ± 0.2, 8.2 ± 0.2, 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ± 0.2, 15.5 ± 0.2, 11.9 ± 0.2 and 14.3 ± 0.2. In some embodiments, the morphology is morphology D, which is characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 2θ of approximately 8.7 ± 0.2, 7.5 ± 0.2, 8.2 ± 0.2, 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ± 0.2, 15.5 ± 0.2, 11.9 ± 0.2, and 14.3 ± 0.2. In some embodiments, the morphology is at least one peak selected from the group consisting of 2θ of approximately 8.7 ± 0.2, 7.5 ± 0.2, and 8.2 ± 0.2; and is a form D characterized by an XRPD pattern comprising at least one, at least two, at least three, at least four, or at least five peaks selected from the group consisting of about 17.6 ± 0.2, 15.2 ± 0.2, 19.1 ± 0.2, 19.8 ± 0.2, 15.5 ± 0.2, 11.9 ± 0.2 and 14.3 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is form D, characterized by a TGA thermal analysis showing a weight loss of about 4.0% up to 180°C. In some embodiments, the hydrated crystalline form is a form D characterized by a DSC thermal analysis including at least one endothermic peak at about 80 °C or about 159 °C. In some embodiments, the hydrated crystalline form is Form D, characterized by a DSC thermographic analysis including endothermic peaks at about 80 °C and about 159 °C. In some embodiments, the hydrated crystalline form is Form D, characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 6; b. a TGA thermographic analysis showing a weight loss of about 4.0% up to 180 °C; and c. a DSC thermographic analysis including at least one endothermic peak at about 80 °C or about 159 °C. In some embodiments, the hydrated crystalline form is Form D, characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 6; b. a TGA thermographic analysis showing a weight loss of about 4.0% up to 180 °C; and c. a DSC thermographic analysis including endothermic peaks at about 80 °C and about 159 °C. In some embodiments, the hydrated crystalline form is Form D as described herein. In some embodiments, form D is pure. In some embodiments, form D is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form D is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form G In some embodiments, the hydrated crystalline form is form G, which is substantially characterized by an XRPD pattern as shown in FIG. 7. In some embodiments, form G is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 7. In some embodiments, form G is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 8. Representative XRPD peaks of form G are as follows: Table 8 In some embodiments, the form is a form G characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.9 ± 0.2, 16.5 ± 0.2, 11.8 ± 0.2, 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2 and 13.0 ± 0.2. In some embodiments, the morphology is morphology G, which features an XRPD pattern comprising at least three, at least four, at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 2θ of about 5.9 ± 0.2, 16.5 ± 0.2, 11.8 ± 0.2, 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2, and 13.0 ± 0.2. In some embodiments, the morphology is at least one peak selected from the group consisting of 2θ of about 5.9 ± 0.2, 16.5 ± 0.2, and 11.8 ± 0.2; and is a form G characterized by an XRPD pattern comprising at least one peak selected from the group consisting of about 6.5 ± 0.2, 22.2 ± 0.2, 21.1 ± 0.2, 17.7 ± 0.2, 27.5 ± 0.2, 15.8 ± 0.2 and 13.0 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is a form G characterized by a TGA thermal analysis showing a weight loss of about 5.4% up to 180°C. In some embodiments, the hydrated crystalline form is a form G characterized by a DSC thermographic analysis including at least one endothermic peak at about 83 °C, about 167 °C, or about 192 °C. In some embodiments, the hydrated crystalline form is a form G characterized by a DSC thermographic analysis including endothermic peaks at about 83 °C, about 167 °C, and about 192 °C. In some embodiments, the hydrated crystalline form is a form G characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 7; b. a TGA thermograph showing a weight loss of about 5.4% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 83 °C, about 167 °C, or about 192 °C. In some embodiments, the hydrated crystalline form is a form G characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 7; b. a TGA thermograph showing a weight loss of about 5.4% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 83 °C, about 167 °C, and about 192 °C. In some embodiments, the hydrated crystalline form is a form G described herein. In some embodiments, form G is pure. In some embodiments, form G is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form G is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form N In some embodiments, the hydrated crystalline form is form N, which is substantially characterized by an XRPD pattern as presented in FIG. 8. In some embodiments, form N is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 8. In some embodiments, form N is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 9. Representative XRPD peaks of form N are as follows: Table 9 In some embodiments, the form is a form N characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2 and 6.6 ± 0.2. In some embodiments, the morphology is morphology N, characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2. In some embodiments, the morphology comprises at least one peak selected from the group consisting of 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, and 15.5 ± 0.2; Form N is characterized by an XRPD pattern comprising at least one, at least two, at least three, or at least four peaks selected from the group consisting of approximately 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2 and 6.6 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is form N, characterized by a TGA thermal analysis showing a weight loss of about 3.9% up to 180°C. In some embodiments, the hydrated crystalline form is a form N characterized by a DSC thermal analysis including at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C. In some embodiments, the hydrated crystalline form is a form N characterized by a DSC thermal analysis including endothermic peaks at about 60 °C, about 131 °C, and about 172 °C. In some embodiments, the hydrated crystalline form is a form N characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 8; b. a TGA thermograph showing a weight loss of about 3.9% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 60 °C, about 131 °C, or about 172 °C. In some embodiments, the hydrated crystalline form is a form N characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 8; b. a TGA thermograph showing a weight loss of about 3.9% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 60 °C, about 131 °C, and about 172 °C. In some embodiments, the hydrated crystalline form is a form N described herein. In some embodiments, form N is pure. In some embodiments, form N is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form N is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form Q In some embodiments, the hydrated crystalline form is form Q, which is substantially characterized by an XRPD pattern as shown in FIG. 9. In some embodiments, form Q is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 9. In some embodiments, form Q is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 10. Representative XRPD peaks of form Q are as follows: Table 10 In some embodiments, the form is a form Q characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 8.5 ± 0.2, 6.2 ± 0.2, 17.0 ± 0.2, 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2 and 20.9 ± 0.2. In some embodiments, the morphology is a morphology Q characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of approximately 8.5 ± 0.2, 6.2 ± 0.2, 17.0 ± 0.2, 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2, and 20.9 ± 0.2. In some embodiments, the morphology comprises at least one peak selected from the group consisting of 2θ of approximately 8.5 ± 0.2, 6.2 ± 0.2, and 17.0 ± 0.2; and is a form Q characterized by an XRPD pattern comprising at least one, at least two, at least three, at least four, or at least five peaks selected from the group consisting of 2θ of approximately 17.9 ± 0.2, 19.2 ± 0.2, 17.6 ± 0.2, 18.6 ± 0.2, 20.6 ± 0.2, 16.5 ± 0.2 and 20.9 ± 0.2. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is a form Q characterized by a TGA thermal analysis showing a weight loss of about 4.9% up to 180°C. In some embodiments, the hydrated crystalline form is a form Q characterized by a DSC thermal analysis including at least one endothermic peak at about 96 °C or about 155 °C. In some embodiments, the hydrated crystalline form is a form Q characterized by a DSC thermal analysis including endothermic peaks at about 96 °C and about 155 °C. In some embodiments, the hydrated crystalline form is a form Q characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 9; b. a TGA thermograph showing a weight loss of about 4.9% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 96 °C or about 155 °C. In some embodiments, the hydrated crystalline form is a form Q characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 9; b. a TGA thermograph showing a weight loss of about 4.9% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 96 °C and about 155 °C. In some embodiments, the hydrated crystalline form is a form Q described herein. In some embodiments, form Q is pure. In some embodiments, form Q is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form Q is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AA In some embodiments, the hydrated crystalline form is substantially form AA, characterized by an XRPD pattern as presented in FIG. 10. In some embodiments, the hydrated crystalline form is form AA as described herein. In some embodiments, form AA is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 10. In some embodiments, form AA is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 11. Representative XRPD peaks of form AA are as follows: Table 11 In some embodiments, the morphology is AA, which features an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 6.8 ± 0.2, 16.9 ± 0.2, 9.1 ± 0.2, 16.0 ± 0.2, 7.7 ± 0.2, 8.4 ± 0.2, 15.7 ± 0.2, 18.7 ± 0.2, 19.7 ± 0.2 and 13.2 ± 0.2. In some embodiments, the form is AA, characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.8 ± 0.2, 16.9 ± 0.2, 9.1 ± 0.2, 16.0 ± 0.2, 7.7 ± 0.2, 8.4 ± 0.2, 15.7 ± 0.2, 18.7 ± 0.2, 19.7 ± 0.2 and 13.2 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, form AA is pure. In some embodiments, form AA is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AA is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. AK form In some embodiments, the hydrated crystalline form is a form AK characterized substantially by an XRPD pattern as presented in FIG. 11. In some embodiments, the form AK is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 11. In some embodiments, the form AK is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 12. Representative XRPD peaks of the form AK are as follows: Table 12 In some embodiments, the form is a form AK characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 14.6 ± 0.2, 16.8 ± 0.2, 20.3 ± 0.2, 16.4 ± 0.2, 14.3 ± 0.2, 7.7 ± 0.2, 19.1 ± 0.2, 17.1 ± 0.2, 10.5 ± 0.2 and 15.4 ± 0.2. In some embodiments, the form is a form AK characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 14.6 ± 0.2, 16.8 ± 0.2, 20.3 ± 0.2, 16.4 ± 0.2, 14.3 ± 0.2, 7.7 ± 0.2, 19.1 ± 0.2, 17.1 ± 0.2, 10.5 ± 0.2 and 15.4 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is a form AK characterized by a TGA thermal analysis showing a weight loss of about 7.2% up to 180°C. In some embodiments, the hydrated crystalline form is a form AK characterized by a DSC thermal analysis including at least one endothermic peak at about 49 °C, about 117 °C, or about 157 °C. In some embodiments, the hydrated crystalline form is a form AK characterized by a DSC thermographic analysis including endothermic peaks at about 49 °C, about 117 °C, and about 157 °C. In some embodiments, the hydrated crystalline form is a form AK characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 11; b. a TGA thermographic analysis showing a weight loss of about 7.2% up to 180 °C; and c. a DSC thermographic analysis including at least one endothermic peak at about 49 °C, about 117 °C, or about 157 °C. In some embodiments, the hydrated crystalline form is a form AK characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 11; b. a TGA thermographic analysis showing a weight loss of about 7.2% up to 180 °C; and c. DSC thermal analysis including endothermic peaks at about 49 °C, about 117 °C, and about 157 °C. In some embodiments, the hydrated crystalline form is the form AK described herein. In some embodiments, the form AK is pure. In some embodiments, the form AK is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AK is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AL In some embodiments, the hydrated crystalline form is a form AL characterized substantially by an XRPD pattern as shown in FIG. 12. In some embodiments, the form AL is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 12. In some embodiments, the form AL is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 13. Representative XRPD peaks of the form AL are as follows: Table 13 In some embodiments, the morphology is an AL characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 6.2 ± 0.2, 18.5 ± 0.2, 6.6 ± 0.2, 16.7 ± 0.2, 13.8 ± 0.2, 16.0 ± 0.2, 21.0 ± 0.2, 22.3 ± 0.2, 17.5 ± 0.2 and 12.3 ± 0.2. In some embodiments, the form is a form AL characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.2 ± 0.2, 18.5 ± 0.2, 6.6 ± 0.2, 16.7 ± 0.2, 13.8 ± 0.2, 16.0 ± 0.2, 21.0 ± 0.2, 22.3 ± 0.2, 17.5 ± 0.2 and 12.3 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the hydrated crystalline form is a form AL characterized by a TGA thermal analysis showing a weight loss of about 7.6% up to 180°C. In some embodiments, the hydrated crystalline form is a form AL characterized by a DSC thermal analysis including at least one endothermic peak at about 99 °C, about 146 °C, or about 159 °C. In some embodiments, the hydrated crystalline form is a form AL characterized by a DSC thermal analysis including endothermic peaks at about 99 °C, about 146 °C, and about 159 °C. In some embodiments, the hydrated crystalline form is a form AL characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 12; b. a TGA thermograph showing a weight loss of about 7.6% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 99 °C, about 146 °C, or about 159 °C. In some embodiments, the hydrated crystalline form is a form AL characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 12; b. a TGA thermograph showing a weight loss of about 7.6% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 99 °C, about 146 °C, and about 159 °C. In some embodiments, the hydrated crystalline form is a form AL described herein. In some embodiments, the form AL is pure. In some embodiments, the form AL is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AL is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Solvented crystalline form In some embodiments, the solid form is a solvated crystalline form (i.e., (solvate). In some embodiments, the solvated crystalline form is 2-methyl-tetrahydrofuran (2-MeTHF), acetonitrile (ACN), tetrahydrofuran (THF), dimethylformamide (DMF), 1,4-dioxane, dimethylacetamide (DMAc), isopropanol (IPA), methyl tert-butyl ether (MTBE), ethyl acetate (EtOAc), acetone, isopropyl acetate (IPAc), chloroform (CHCl3), dichloromethane (DCM), cyclopentyl methyl ether (CPME), anisole, diisopropyl ether, toluene, NIt is a solvate of methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), 1,2-propanediol, 1,2-dimethoxyethane, or 2-tert-butoxyethanol. In some embodiments, the solvated crystalline form is the form A, form C / S, form E, form F, form H, form I, form L, form M, form R, form T, form V, form W, form X, form Y, form Z, form AD, form AE, form AH, form AI, form AJ, form AP, form AQ, or form AR described herein. In some embodiments, the solvated crystalline form is form A. In some embodiments, the solvated crystalline form is form C / S. In some embodiments, the solvated crystalline form is form E. In some embodiments, the solvated crystalline form is form F. In some embodiments, the solvated crystalline form is form H. In some embodiments, the solvated crystalline form is form I. In some embodiments, the solvated crystal form is form L. In some embodiments, the solvated crystal form is form M. In some embodiments, the solvated crystal form is form R. In some embodiments, the solvated crystal form is form T. In some embodiments, the solvated crystal form is form V. In some embodiments, the solvated crystal form is form W. In some embodiments, the solvated crystal form is form X. In some embodiments, the solvated crystal form is form Y. In some embodiments, the solvated crystal form is form Z. In some embodiments, the solvated crystal form is form AD. In some embodiments, the solvated crystal form is form AE. In some embodiments, the solvated crystal form is form AH. In some embodiments, the solvated crystal form is form AI. In some embodiments, the solvated crystal form is form AJ. In some embodiments, the solvated crystal form is form AP. In some embodiments, the solvated crystal form is form AQ. In some embodiments, the solvated crystal form is form AR. Form A In some embodiments, the solvated crystalline form is a 2-MeTHF solvate. In some embodiments, the 2-MeTHF solvate is form A. In some embodiments, the solvated crystalline form is form A, characterized substantially by an XRPD pattern as shown in FIG. 13. In some embodiments, form A is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 13. In some embodiments, form A is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 14. Representative XRPD peaks of form A are as follows: Table 14 In some embodiments, the form is a form A characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 6.0 ± 0.2, 18.3 ± 0.2, 9.3 ± 0.2, 20.6 ± 0.2, 15.6 ± 0.2, 17.1 ± 0.2, 8.9 ± 0.2, 14.9 ± 0.2 and 17.4 ± 0.2. In some embodiments, the form is form A, which features an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.0 ± 0.2, 18.3 ± 0.2, 9.3 ± 0.2, 20.6 ± 0.2, 15.6 ± 0.2, 17.1 ± 0.2, 8.9 ± 0.2, 14.9 ± 0.2, and 17.4 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form A, characterized by a TGA thermal analysis showing a weight loss of about 11.5% up to 180 °C. In some embodiments, the solvated crystalline form is form A, characterized by a DSC thermal analysis including an endothermic peak at about 149 °C. In some embodiments, the solvated crystalline form is form A characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 13; b. a TGA thermograph showing a weight loss of about 11.5% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 149 °C. In some embodiments, the solvated crystalline form is form A as described herein. In some embodiments, form A is pure. In some embodiments, form A is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form A is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Type C / S In some embodiments, the solvated crystalline form is MTBE solvate. In some embodiments, the MTBE solvate is form C / S (free base form C and form S are the same crystalline form). In some embodiments, the solvated crystalline form is form C / S, characterized substantially by an XRPD pattern as shown in FIG. 14. In some embodiments, form C / S is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 14. In some embodiments, form C / S is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 15. Representative XRPD peaks of form C / S are as follows: Table 15 In some embodiments, the morphology is a morphology C / S characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.9 ± 0.2, 17.2 ± 0.2, 18.2 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 9.0 ± 0.2, 14.8 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2 and 16.1 ± 0.2. In some embodiments, the form is a form C / S characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.9 ± 0.2, 17.2 ± 0.2, 18.2 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 9.0 ± 0.2, 14.8 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2 and 16.1 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form C / S characterized by a TGA thermal analysis showing a weight loss of about 4.9% up to 110 °C and a weight loss of about 5.0% from 110 to 180 °C. In some embodiments, the solvated crystalline form is a form C / S characterized by a DSC thermal analysis including an endothermic peak at about 147 °C. In some embodiments, the solvated crystalline form is a form C / S characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 14; b. a TGA thermograph showing a weight loss of about 4.9% up to 110 °C and a weight loss of about 5.0% from 110 to 180 °C; and c. a DSC thermograph including an endothermic peak at about 147 °C. In some embodiments, the solvated crystalline form is a form C / S as described herein. In some embodiments, the form C / S is pure. In some embodiments, the form C / S is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form C / S is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form E In some embodiments, the solvated crystalline form is an ACN solvate. In some embodiments, the ACN solvate is form E. In some embodiments, the solvated crystalline form is form E, which features substantially the XRPD pattern as shown in FIG. 15. In some embodiments, form E features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 15. In some embodiments, form E features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 16. Representative XRPD peaks of form E are as follows: Table 16 In some embodiments, the form is a form E characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 15.6 ± 0.2, 20.1 ± 0.2, 19.6 ± 0.2, 6.5 ± 0.2, 10.3 ± 0.2, 14.7 ± 0.2, 16.1 ± 0.2, 23.4 ± 0.2, 17.2 ± 0.2 and 22.9 ± 0.2. In some embodiments, the form is form E, which features an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 15.6 ± 0.2, 20.1 ± 0.2, 19.6 ± 0.2, 6.5 ± 0.2, 10.3 ± 0.2, 14.7 ± 0.2, 16.1 ± 0.2, 23.4 ± 0.2, 17.2 ± 0.2, and 22.9 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form E, characterized by a TGA thermal analysis showing a weight loss of about 7.3% up to 180 °C. In some embodiments, the solvated crystalline form is form E characterized by a DSC thermographic analysis including at least one endothermic peak at about 68 °C, about 164 °C, or about 195 °C. In some embodiments, the solvated crystalline form is form E characterized by a DSC thermographic analysis including endothermic peaks at about 68 °C, about 164 °C, and about 195 °C. In some embodiments, the solvated crystalline form is form E characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 15; b. a TGA thermograph showing a weight loss of about 7.3% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 68 °C, about 164 °C, or about 195 °C. In some embodiments, the solvated crystalline form is form E characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 15; b. a TGA thermograph showing a weight loss of about 7.3% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 68 °C, about 164 °C, and about 195 °C. In some embodiments, the solvated crystalline form is form E as described herein. In some embodiments, form E is pure. In some embodiments, form E is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form E is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form F In some embodiments, the solvated crystalline form is an acetone solvate. In some embodiments, the acetone solvate is form F. In some embodiments, the solvated crystalline form is form F, characterized substantially by an XRPD pattern as shown in FIG. 16. In some embodiments, the solvated crystalline form is form F as described herein. In some embodiments, form F is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 16. In some embodiments, form F is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 17. Representative XRPD peaks of form F are as follows: Table 17 In some embodiments, the form is a form F characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 6.4 ± 0.2, 19.8 ± 0.2, 9.9 ± 0.2, 14.2 ± 0.2, 16.4 ± 0.2, 15.9 ± 0.2, 12.9 ± 0.2, 24.0 ± 0.2, 9.4 ± 0.2 and 25.7 ± 0.2 2θ. In some embodiments, the form is a form F characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.4 ± 0.2, 19.8 ± 0.2, 9.9 ± 0.2, 14.2 ± 0.2, 16.4 ± 0.2, 15.9 ± 0.2, 12.9 ± 0.2, 24.0 ± 0.2, 9.4 ± 0.2, and 25.7 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form F, characterized by a TGA thermal analysis showing a weight loss of about 1.9% up to 180 °C. In some embodiments, the solvated crystalline form is form F characterized by a DSC thermographic analysis including at least one endothermic peak at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is form F characterized by a DSC thermographic analysis including an endothermic peak at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is form F characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 16; b. a TGA thermograph showing a weight loss of about 1.9% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 51 °C, about 95 °C, or about 194 °C. In some embodiments, the solvated crystalline form is form F characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 16; b. a TGA thermograph showing a weight loss of about 1.9% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 51 °C, about 95 °C, and about 194 °C. In some embodiments, the solvated crystalline form is form F as described herein. In some embodiments, form F is pure. In some embodiments, form F is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form F is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form H In some embodiments, the solvated crystalline form is a THF solvate. In some embodiments, the THF solvate is form H. In some embodiments, the solvated crystalline form is form H, which is substantially characterized by an XRPD pattern as shown in FIG. 17. In some embodiments, form H is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 17. In some embodiments, form H is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 18. Representative XRPD peaks of form H are as follows: Table 18 In some embodiments, the form is a form H characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 19.0 ± 0.2, 14.9 ± 0.2, 15.7 ± 0.2, 6.3 ± 0.2, 19.8 ± 0.2, 8.9 ± 0.2, 10.1 ± 0.2, 23.1 ± 0.2, 8.4 ± 0.2 and 22.2 ± 0.2 θ. In some embodiments, the form is a form H characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 19.0 ± 0.2, 14.9 ± 0.2, 15.7 ± 0.2, 6.3 ± 0.2, 19.8 ± 0.2, 8.9 ± 0.2, 10.1 ± 0.2, 23.1 ± 0.2, 8.4 ± 0.2, and 22.2 ± 0.2 θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form H characterized by a TGA thermal analysis showing a weight loss of about 11.2% up to 180 °C. In some embodiments, the solvated crystalline form is a form H characterized by a DSC thermographic analysis including at least one endothermic peak at about 132 °C or about 192 °C. In some embodiments, the solvated crystalline form is a form H characterized by a DSC thermographic analysis including endothermic peaks at about 132 °C and about 192 °C. In some embodiments, the solvated crystalline form is form H characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 17; b. a TGA thermograph showing a weight loss of about 11.2% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 132 °C or about 192 °C. In some embodiments, the solvated crystalline form is form H characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 17; b. a TGA thermograph showing a weight loss of about 11.2% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 132 °C and about 192 °C. In some embodiments, the solvated crystalline form is form H as described herein. In some embodiments, form H is pure. In some embodiments, form H is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form H is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form I In some embodiments, the solvated crystalline form is a DMF solvate. In some embodiments, the DMF solvate is form I. In some embodiments, the solvated crystalline form is form I, characterized substantially by an XRPD pattern as shown in FIG. 18. In some embodiments, form I is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 18. In some embodiments, form I is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 19. Representative XRPD peaks of form I are as follows: Table 19 In some embodiments, the form is form I, characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 19.2 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 23.3 ± 0.2, 15.2 ± 0.2, 28.1 ± 0.2, 22.8 ± 0.2, 8.4 ± 0.2, 22.5 ± 0.2 and 9.9 ± 0.2 θ. In some embodiments, the form is form I, characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 19.2 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 23.3 ± 0.2, 15.2 ± 0.2, 28.1 ± 0.2, 22.8 ± 0.2, 8.4 ± 0.2, 22.5 ± 0.2, and 9.9 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form I, characterized by a TGA thermal analysis showing a weight loss of about 10.1% up to 180 °C. In some embodiments, the solvated crystalline form is form I, characterized by a DSC thermal analysis including an endothermic peak at about 152 °C. In some embodiments, the solvated crystalline form is form I characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 18; b. a TGA thermograph showing a weight loss of about 10.1% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 152 °C. In some embodiments, the solvated crystalline form is form I as described herein. In some embodiments, Form I is pure. In some embodiments, Form I is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of Form I is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form L In some embodiments, the solvated crystalline form is 1,4-dioxane solvate. In some embodiments, the 1,4-dioxane solvate is form L. In some embodiments, the solvated crystalline form is form L, which features substantially the XRPD pattern as presented in FIG. 19. In some embodiments, form L features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 19. In some embodiments, form L features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 20. Representative XRPD peaks of form L are as follows: Table 20 In some embodiments, the form is a form L characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 18.5 ± 0.2, 15.8 ± 0.2, 19.6 ± 0.2, 6.1 ± 0.2, 15.1 ± 0.2, 23.4 ± 0.2, 8.5 ± 0.2, 16.2 ± 0.2, 9.1 ± 0.2 and 28.4 ± 0.2 θ. In some embodiments, the form is a form L characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 18.5 ± 0.2, 15.8 ± 0.2, 19.6 ± 0.2, 6.1 ± 0.2, 15.1 ± 0.2, 23.4 ± 0.2, 8.5 ± 0.2, 16.2 ± 0.2, 9.1 ± 0.2 and 28.4 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form L characterized by a TGA thermal analysis showing a weight loss of about 8.4% up to 180 °C. In some embodiments, the solvated crystalline form is a form L characterized by a DSC thermal analysis including an endothermic peak at about 144 °C. In some embodiments, the solvated crystalline form is form L characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 19; b. a TGA thermograph showing a weight loss of about 8.4% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 144 °C. In some embodiments, the solvated crystalline form is form L as described herein. In some embodiments, form L is pure. In some embodiments, form L is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form L is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form M In some embodiments, the solvated crystalline form is DMAc solvate. In some embodiments, the DMAc solvate is form M. In some embodiments, the solvated crystalline form is form M characterized substantially by an XRPD pattern as shown in FIG. 20. In some embodiments, form M is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 20. In some embodiments, form M is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 21. Representative XRPD peaks of form M are as follows: Table 21 In some embodiments, the morphology is a morphology M characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 6.0 ± 0.2, 18.9 ± 0.2, 25.0 ± 0.2, 22.8 ± 0.2, 9.7 ± 0.2, 14.9 ± 0.2, 17.0 ± 0.2, 27.7 ± 0.2, 21.6 ± 0.2 and 16.6 ± 0.2. In some embodiments, the form is a form M characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.0 ± 0.2, 18.9 ± 0.2, 25.0 ± 0.2, 22.8 ± 0.2, 9.7 ± 0.2, 14.9 ± 0.2, 17.0 ± 0.2, 27.7 ± 0.2, 21.6 ± 0.2 and 16.6 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form M characterized by a TGA thermal analysis showing a weight loss of about 12.5% ​​up to 180 °C. In some embodiments, the solvated crystalline form is a form M characterized by a DSC thermal analysis including an endothermic peak at about 159 °C. In some embodiments, the solvated crystalline form is form M characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 20; b. a TGA thermograph showing a weight loss of about 12.5% ​​up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 159 °C. In some embodiments, the solvated crystalline form is form M as described herein. In some embodiments, form M is pure. In some embodiments, form M is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form M is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form R In some embodiments, the solvated crystalline form is an IPA solvate. In some embodiments, the IPA solvate is form R. In some embodiments, the solvated crystalline form is form R characterized substantially by an XRPD pattern as shown in FIG. 21. In some embodiments, form R is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 21. In some embodiments, form R is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 22. Representative XRPD peaks of form R are as follows: Table 22 In some embodiments, the morphology is a morphology R characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.3 ± 0.2, 19.7 ± 0.2, 15.7 ± 0.2, 21.3 ± 0.2, 14.5 ± 0.2, 17.1 ± 0.2, 6.7 ± 0.2, 21.0 ± 0.2, 16.3 ± 0.2 and 25.9 ± 0.2. In some embodiments, the form is a form R characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.3 ± 0.2, 19.7 ± 0.2, 15.7 ± 0.2, 21.3 ± 0.2, 14.5 ± 0.2, 17.1 ± 0.2, 6.7 ± 0.2, 21.0 ± 0.2, 16.3 ± 0.2, and 25.9 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form R characterized by a TGA thermal analysis showing a weight loss of about 6.3% up to 180 °C. In some embodiments, the solvated crystalline form is a form R characterized by a DSC thermal analysis including an endothermic peak at about 165 °C. In some embodiments, the solvated crystalline form is a form R characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 21; b. a TGA thermograph showing a weight loss of about 6.3% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 165 °C. In some embodiments, the solvated crystalline form is a form R described herein. In some embodiments, form R is pure. In some embodiments, form R is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form R is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. shape T In some embodiments, the solvated crystalline form is an EtOAc solvate. In some embodiments, the EtOAc solvate is form T. In some embodiments, the solvated crystalline form is form T, which is substantially characterized by an XRPD pattern as shown in FIG. 22. In some embodiments, form T is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 22. In some embodiments, form T is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 23. Representative XRPD peaks of form T are as follows: Table 23 In some embodiments, the morphology is a morphology T characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 6.0 ± 0.2, 15.7 ± 0.2, 18.5 ± 0.2, 8.8 ± 0.2, 9.2 ± 0.2, 9.4 ± 0.2, 20.4 ± 0.2, 17.3 ± 0.2, 17.7 ± 0.2 and 14.4 ± 0.2. In some embodiments, the form is a form T characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 6.0 ± 0.2, 15.7 ± 0.2, 18.5 ± 0.2, 8.8 ± 0.2, 9.2 ± 0.2, 9.4 ± 0.2, 20.4 ± 0.2, 17.3 ± 0.2, 17.7 ± 0.2, and 14.4 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form T characterized by a TGA thermal analysis showing a weight loss of about 11.7% up to 180 °C. In some embodiments, the solvated crystalline form is a form T characterized by a DSC thermal analysis including an endothermic peak at about 134 °C. In some embodiments, the solvated crystalline form is a form T characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 22; b. a TGA thermograph showing a weight loss of about 11.7% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 134 °C. In some embodiments, the solvated crystalline form is a form T as described herein. In some embodiments, form T is pure. In some embodiments, form T is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form T is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Shape V In some embodiments, the solvated crystalline form is an IPAc solvate. In some embodiments, the IPAc solvate is form V. In some embodiments, the solvated crystalline form is form V, which is substantially characterized by an XRPD pattern as shown in FIG. 23. In some embodiments, form V is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 23. In some embodiments, form V is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 24. Representative XRPD peaks of form V are as follows: Table 24 In some embodiments, the form is a form V characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 15.9 ± 0.2, 5.8 ± 0.2, 19.5 ± 0.2, 15.0 ± 0.2, 17.6 ± 0.2, 23.5 ± 0.2, 8.5 ± 0.2, 21.6 ± 0.2, 9.4 ± 0.2 and 17.3 ± 0.2 2θ. In some embodiments, the form is a form V characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 15.9 ± 0.2, 5.8 ± 0.2, 19.5 ± 0.2, 15.0 ± 0.2, 17.6 ± 0.2, 23.5 ± 0.2, 8.5 ± 0.2, 21.6 ± 0.2, 9.4 ± 0.2, and 17.3 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form V, characterized by a TGA thermal analysis showing a weight loss of about 13.5% up to 180 °C. In some embodiments, the solvated crystalline form is a form V characterized by a DSC thermographic analysis including at least one endothermic peak at about 55 °C, about 110 °C, or about 175 °C. In some embodiments, the solvated crystalline form is a form V characterized by a DSC thermographic analysis including endothermic peaks at about 55 °C, about 110 °C, and about 175 °C. In some embodiments, the solvated crystalline form is a form V characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 23; b. a TGA thermograph showing a weight loss of about 13.5% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 55 °C, about 110 °C, or about 175 °C. In some embodiments, the solvated crystalline form is a form V characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 23; b. a TGA thermograph showing a weight loss of about 13.5% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 55 °C, about 110 °C, and about 175 °C. In some embodiments, the solvated crystalline form is a form V as described herein. In some embodiments, form V is pure. In some embodiments, form V is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form V is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Shape W In some embodiments, the solvated crystalline form is a CHCl3 solvate. In some embodiments, the CHCl3 solvate is form W. In some embodiments, the solvated crystalline form is form W, characterized substantially by an XRPD pattern as shown in FIG. 24. In some embodiments, form W is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 24. In some embodiments, form W is characterized by an XRPD pattern containing one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 25. Representative XRPD peaks of form W are as follows: Table 25 In some embodiments, the shape is a shape W characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 5.7 ± 0.2, 19.7 ± 0.2, 16.3 ± 0.2, 13.3 ± 0.2, 21.4 ± 0.2, 6.3 ± 0.2, 6.1 ± 0.2, 21.6 ± 0.2, 18.8 ± 0.2 and 14.7 ± 0.2 2θ. In some embodiments, the form is a form W characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.7 ± 0.2, 19.7 ± 0.2, 16.3 ± 0.2, 13.3 ± 0.2, 21.4 ± 0.2, 6.3 ± 0.2, 6.1 ± 0.2, 21.6 ± 0.2, 18.8 ± 0.2, and 14.7 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form W characterized by a TGA thermal analysis showing a weight loss of about 8.9% up to 180 °C. In some embodiments, the solvated crystalline form is a form W characterized by a DSC thermal analysis including at least one endothermic peak at about 93 °C or about 143 °C. In some embodiments, the solvated crystalline form is a form W characterized by a DSC thermal analysis including endothermic peaks at about 93 °C and about 143 °C. In some embodiments, the solvated crystalline form is a form W characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 24; b. a TGA thermograph showing a weight loss of about 8.9% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 93 °C or about 143 °C. In some embodiments, the solvated crystalline form is a form W characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 24; b. a TGA thermograph showing a weight loss of about 8.9% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 93 °C and about 143 °C. In some embodiments, the solvated crystalline form is a form W described herein. In some embodiments, form W is pure. In some embodiments, form W is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form W is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Shape X In some embodiments, the solvated crystalline form is a DCM solvate. In some embodiments, the DCM solvate is form X. In some embodiments, the solvated crystalline form is form X, which features substantially the XRPD pattern as presented in FIG. 25. In some embodiments, form X features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 25. In some embodiments, form X features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 26. Representative XRPD peaks of form X are as follows: Table 26 In some embodiments, the form is a form X characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of about 19.9 ± 0.2, 5.8 ± 0.2, 22.5 ± 0.2, 23.5 ± 0.2, 13.2 ± 0.2, 17.4 ± 0.2, 15.1 ± 0.2, 14.1 ± 0.2, 17.7 ± 0.2 and 21.5 ± 0.2 2θ. In some embodiments, the form is a form X characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 19.9 ± 0.2, 5.8 ± 0.2, 22.5 ± 0.2, 23.5 ± 0.2, 13.2 ± 0.2, 17.4 ± 0.2, 15.1 ± 0.2, 14.1 ± 0.2, 17.7 ± 0.2 and 21.5 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form X, characterized by a TGA thermal analysis showing a weight loss of about 8.4% up to 180 °C. In some embodiments, the solvated crystalline form is form X characterized by a DSC thermographic analysis including at least one endothermic peak at about 126 °C, about 137 °C, or about 161 °C. In some embodiments, the solvated crystalline form is form X characterized by a DSC thermographic analysis including endothermic peaks at about 126 °C, about 137 °C, and about 161 °C. In some embodiments, the solvated crystalline form is form X characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 25; b. a TGA thermograph showing a weight loss of about 8.4% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 126 °C, about 137 °C, or about 161 °C. In some embodiments, the solvated crystalline form is form X characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 25; b. a TGA thermograph showing a weight loss of about 8.4% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 126 °C, about 137 °C, and about 161 °C. In some embodiments, the solvated crystalline form is form X as described herein. In some embodiments, form X is pure. In some embodiments, form X is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form X is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Shape Y In some embodiments, the solvated crystalline form is a CMPE solvate. In some embodiments, the CMPE solvate is form Y. In some embodiments, the solvated crystalline form is form Y, which is substantially characterized by an XRPD pattern as shown in FIG. 26. In some embodiments, form Y is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 26. In some embodiments, form Y is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 27. Representative XRPD peaks of form Y are as follows: Table 27 In some embodiments, the morphology is a morphology Y characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2 and 9.3 ± 0.2. In some embodiments, the form is a form Y characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form Y, characterized by a TGA thermal analysis showing a weight loss of about 12.4% up to 180 °C. In some embodiments, the solvated crystalline form is a form Y characterized by a DSC thermographic analysis including at least one endothermic peak at about 125 °C or about 141 °C. In some embodiments, the solvated crystalline form is a form Y characterized by a DSC thermographic analysis including endothermic peaks at about 125 °C and about 141 °C. In some embodiments, the solvated crystalline form is form Y characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 26; b. a TGA thermograph showing a weight loss of about 12.4% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 125 °C or about 141 °C. In some embodiments, the solvated crystalline form is form Y characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 26; b. a TGA thermograph showing a weight loss of about 12.4% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 125 °C and about 141 °C. In some embodiments, the solvated crystalline form is form Y as described herein. In some embodiments, form Y is pure. In some embodiments, form Y is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form Y is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Shape Z In some embodiments, the solvated crystalline form is an anisole solvate. In some embodiments, the anisole solvate is form Z. In some embodiments, the solvated crystalline form is form Z, which substantially features an XRPD pattern as shown in FIG. 27. In some embodiments, form Z features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 27. In some embodiments, form Z features an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 28. Representative XRPD peaks of form Z are as follows: Table 28 In some embodiments, the form is a form Z characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2 and 9.3 ± 0.2. In some embodiments, the form is form Z, characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.9 ± 0.2, 18.2 ± 0.2, 17.3 ± 0.2, 15.0 ± 0.2, 20.6 ± 0.2, 15.4 ± 0.2, 8.9 ± 0.2, 19.8 ± 0.2, 23.4 ± 0.2, and 9.3 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is form Z, characterized by a TGA thermal analysis showing a weight loss of about 13.1% up to 180 °C. In some embodiments, the solvated crystalline form is form Z, characterized by a DSC thermal analysis including an endothermic peak at about 105 °C. In some embodiments, the solvated crystalline form is form Z characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 27; b. a TGA thermograph showing a weight loss of about 13.1% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 105 °C. In some embodiments, the solvated crystalline form is form Z as described herein. In some embodiments, form Z is pure. In some embodiments, form Z is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form Z is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AD In some embodiments, the solvated crystalline form is a diisopropyl ether solvate. In some embodiments, the diisopropyl ether solvate is form AD. In some embodiments, the solvated crystalline form is form AD characterized substantially by an XRPD pattern as presented in FIG. 28. In some embodiments, form AD is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 28. In some embodiments, form AD is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 29. Representative XRPD peaks of form AD are as follows: Table 29 In some embodiments, the morphology is an AD morphology characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 15.7 ± 0.2, 5.9 ± 0.2, 17.5 ± 0.2, 9.4 ± 0.2, 15.0 ± 0.2, 19.1 ± 0.2, 8.4 ± 0.2, 23.1 ± 0.2, 22.6 ± 0.2 and 22.1 ± 0.2. In some embodiments, the form is an AD characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 15.7 ± 0.2, 5.9 ± 0.2, 17.5 ± 0.2, 9.4 ± 0.2, 15.0 ± 0.2, 19.1 ± 0.2, 8.4 ± 0.2, 23.1 ± 0.2, 22.6 ± 0.2 and 22.1 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AD characterized by a TGA thermal analysis showing a weight loss of about 11.0% up to 180 °C. In some embodiments, the solvated crystalline form is a form AD characterized by a DSC thermal analysis including at least one endothermic peak at about 64 °C, about 116 °C, or about 179 °C. In some embodiments, the solvated crystalline form is a form AD characterized by a DSC thermal analysis including endothermic peaks at about 64 °C, about 116 °C, and about 179 °C. In some embodiments, the solvated crystalline form is a form AD characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 28; b. a TGA thermograph showing a weight loss of about 11.0% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 64 °C, about 116 °C, or about 179 °C. In some embodiments, the solvated crystalline form is a form AD characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 28; b. a TGA thermograph showing a weight loss of about 11.0% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 64 °C, about 116 °C, and about 179 °C. In some embodiments, the solvated crystalline form is a form AD described herein. In some embodiments, the form AD is pure. In some embodiments, the form AD is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AD is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AE In some embodiments, the solvated crystalline form is a toluene solvate. In some embodiments, the toluene solvate is a form AE. In some embodiments, the solvated crystalline form is a form AE characterized substantially by an XRPD pattern as shown in FIG. 29. In some embodiments, the form AE is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 29. In some embodiments, the form AE is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 30. Representative XRPD peaks of the form AE are as follows: Table 30 In some embodiments, the morphology is an AE characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ of approximately 5.5 ± 0.2, 14.6 ± 0.2, 15.1 ± 0.2, 9.9 ± 0.2, 21.5 ± 0.2, 20.6 ± 0.2, 22.4 ± 0.2, 16.3 ± 0.2, 19.9 ± 0.2 and 7.0 ± 0.2. In some embodiments, the form is a form AE characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 5.5 ± 0.2, 14.6 ± 0.2, 15.1 ± 0.2, 9.9 ± 0.2, 21.5 ± 0.2, 20.6 ± 0.2, 22.4 ± 0.2, 16.3 ± 0.2, 19.9 ± 0.2, and 7.0 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AE characterized by a TGA thermal analysis showing a weight loss of about 12.4% up to 180 °C. In some embodiments, the solvated crystalline form is a morphological AE characterized by a DSC thermal analysis including at least one endothermic peak at about 56 °C or about 115 °C. In some embodiments, the solvated crystalline form is a morphological AE characterized by a DSC thermal analysis including endothermic peaks at about 56 °C and about 115 °C. In some embodiments, the solvated crystalline form is a form AE characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 29; b. a TGA thermograph showing a weight loss of about 12.4% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 56 °C or about 115 °C. In some embodiments, the solvated crystalline form is a form AE characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 29; b. a TGA thermograph showing a weight loss of about 12.4% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 56 °C and about 115 °C. In some embodiments, the solvated crystalline form is a form AE described herein. In some embodiments, the form AE is pure. In some embodiments, the form AE is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AE is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AH In some embodiments, the solvated crystalline form is an NMP solvate. In some embodiments, the NMP solvate is form AH. In some embodiments, the solvated crystalline form is form AH characterized substantially by an XRPD pattern as shown in FIG. 30. In some embodiments, form AH is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 30. In some embodiments, form AH is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 31. Representative XRPD peaks of form AH are as follows: Table 31 In some embodiments, the morphology is a morphology AH characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 5.9 ± 0.2, 19.0 ± 0.2, 9.6 ± 0.2, 16.7 ± 0.2, 17.0 ± 0.2, 14.6 ± 0.2, 24.7 ± 0.2, 22.8 ± 0.2, 17.4 ± 0.2 and 18.5 ± 0.2. In some embodiments, the form is AH, characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of about 5.9 ± 0.2, 19.0 ± 0.2, 9.6 ± 0.2, 16.7 ± 0.2, 17.0 ± 0.2, 14.6 ± 0.2, 24.7 ± 0.2, 22.8 ± 0.2, 17.4 ± 0.2, and 18.5 ± 0.2. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AH characterized by a TGA thermal analysis showing a weight loss of about 14.6% up to 190 °C. In some embodiments, the solvated crystalline form is a form AH characterized by a DSC thermal analysis including at least one endothermic peak at about 156 °C or about 173 °C. In some embodiments, the solvated crystalline form is a form AH characterized by a DSC thermal analysis including endothermic peaks at about 156 °C and about 173 °C. In some embodiments, the solvated crystalline form is a form AH characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 30; b. a TGA thermograph showing a weight loss of about 14.6% up to 190 °C; and c. a DSC thermograph including at least one endothermic peak at about 156 °C or about 173 °C. In some embodiments, the solvated crystalline form is a form AH characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 30; b. a TGA thermograph showing a weight loss of about 14.6% up to 190 °C; and c. a DSC thermograph including endothermic peaks at about 156 °C and about 173 °C. In some embodiments, the solvated crystalline form is a form AH described herein. In some embodiments, form AH is pure. In some embodiments, form AH is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AH is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AI In some embodiments, the solvated crystalline form is a DMSO solvate. In some embodiments, the DMSO solvate is a form AI. In some embodiments, the solvated crystalline form is a form AI characterized substantially by an XRPD pattern as presented in FIG. 31. In some embodiments, the form AI is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 31. In some embodiments, the form AI is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 32. Representative XRPD peaks of the form AI are as follows: Table 32 In some embodiments, the morphology is an AI characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 18.8 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 15.0 ± 0.2, 23.5 ± 0.2, 19.4 ± 0.2, 19.7 ± 0.2, 9.0 ± 0.2, 8.5 ± 0.2 and 9.9 ± 0.2. In some embodiments, the form is an XRPD pattern characterized by at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 18.8 ± 0.2, 15.7 ± 0.2, 6.2 ± 0.2, 15.0 ± 0.2, 23.5 ± 0.2, 19.4 ± 0.2, 19.7 ± 0.2, 9.0 ± 0.2, 8.5 ± 0.2, and 9.9 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AI characterized by a TGA thermal analysis showing a weight loss of about 12.0% up to 190 °C. In some embodiments, the solvated crystalline form is a form AI characterized by a DSC thermal analysis including at least one endothermic peak at about 155 °C or about 166 °C. In some embodiments, the solvated crystalline form is a form AI characterized by a DSC thermal analysis including endothermic peaks at about 155 °C and about 166 °C. In some embodiments, the solvated crystalline form is a form AI characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 31; b. a TGA thermograph showing a weight loss of about 12.0% up to 190 °C; and c. a DSC thermograph including at least one endothermic peak at about 155 °C or about 160 °C. In some embodiments, the solvated crystalline form is a form AI characterized by two or more of the following: a. an XRPD pattern substantially as presented in FIG. 31; b. a TGA thermograph showing a weight loss of about 12.0% up to 190 °C; and c. a DSC thermograph including endothermic peaks at about 155 °C and about 166 °C. In some embodiments, the solvated crystalline form is a form AI described herein. In some embodiments, the form AI is pure. In some embodiments, the form AI is substantially free of other solid forms (e.g., amorphous solid) described herein. In some embodiments, the purity of the form AI is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AJ In some embodiments, the solvated crystalline form is a CHCl3 solvate. In some embodiments, the CHCl3 solvate is form AJ. In some embodiments, the solvated crystalline form is form AJ characterized substantially by an XRPD pattern as shown in FIG. 32. In some embodiments, form AJ is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 32. In some embodiments, form AJ is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 33. Representative XRPD peaks of form AJ are as follows: Table 33 In some embodiments, the form is a form AJ characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 14.5 ± 0.2, 20.7 ± 0.2, 19.1 ± 0.2, 19.4 ± 0.2, 20.3 ± 0.2, 16.7 ± 0.2, 8.1 ± 0.2, 17.0 ± 0.2, 17.8 ± 0.2 and 10.8 ± 0.2. In some embodiments, the form is a form AJ characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 14.5 ± 0.2, 20.7 ± 0.2, 19.1 ± 0.2, 19.4 ± 0.2, 20.3 ± 0.2, 16.7 ± 0.2, 8.1 ± 0.2, 17.0 ± 0.2, 17.8 ± 0.2 and 10.8 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AJ characterized by a TGA thermal analysis showing a weight loss of about 17.3% up to 180 °C. In some embodiments, the solvated crystalline form is a form AJ characterized by a DSC thermal analysis including at least one endothermic peak at about 112 °C or about 138 °C. In some embodiments, the solvated crystalline form is a form AJ characterized by a DSC thermal analysis including endothermic peaks at about 112 °C and about 138 °C. In some embodiments, the solvated crystalline form is a form AJ characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 32; b. a TGA thermal analysis showing a weight loss of about 17.3% up to 180 °C; and c. a DSC thermal analysis including at least one endothermic peak at about 112 °C or about 138 °C. In some embodiments, the solvated crystalline form is a form AJ characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 32; b. a TGA thermal analysis showing a weight loss of about 17.3% up to 180 °C; and c. a DSC thermal analysis including endothermic peaks at about 112 °C and about 138 °C. In some embodiments, the solvated crystalline form is a form AJ as described herein. In some embodiments, form AJ is pure. In some embodiments, form AJ is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AJ is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AP In some embodiments, the solvated crystalline form is a 1,2-propanediol solvate. In some embodiments, the 1,2-propanediol solvate is a form AP. In some embodiments, the solvated crystalline form is a form AP characterized substantially by an XRPD pattern as presented in FIG. 33. In some embodiments, the form AP is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in FIG. 33. In some embodiments, the form AP is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as presented in Table 34. Representative XRPD peaks of the form AP are as follows: Table 34 In some embodiments, the shape is an AP characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ of approximately 7.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2 and 16.4 ± 0.2. In some embodiments, the form is an AP characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of about 7.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2, and 16.4 ± 0.2. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AP characterized by a TGA thermal analysis showing a weight loss of about 18.7% up to 180 °C. In some embodiments, the solvated crystalline form is a form AP characterized by a DSC thermal analysis including at least one endothermic peak at about 77 °C or about 130 °C. In some embodiments, the solvated crystalline form is a form AP characterized by a DSC thermal analysis including endothermic peaks at about 77 °C and about 130 °C. In some embodiments, the solvated crystalline form is a form AP characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 33; b. a TGA thermograph showing a weight loss of about 18.7% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 77 °C or about 130 °C. In some embodiments, the solvated crystalline form is a form AP characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 33; b. a TGA thermograph showing a weight loss of about 18.7% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 77 °C and about 130 °C. In some embodiments, the solvated crystalline form is a form AP described herein. In some embodiments, the form AP is pure. In some embodiments, the form AP is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AP is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AQ In some embodiments, the solvated crystalline form is 1,2-dimethoxyethane solvate. In some embodiments, the 1,2-dimethoxyethane solvate is form AQ. In some embodiments, the solvated crystalline form is form AQ characterized substantially by an XRPD pattern as shown in FIG. 34. In some embodiments, form AQ is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 34. In some embodiments, form AQ is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 35. Representative XRPD peaks of form AQ are as follows: Table 35 In some embodiments, the morphology is morphology AQ, which features an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 17.6 ± 0.2, 18.1 ± 0.2, 9.0 ± 0.2, 6.1 ± 0.2, 20.8 ± 0.2, 15.4 ± 0.2, 23.7 ± 0.2, 15.1 ± 0.2, 19.8 ± 0.2 and 9.3 ± 0.2. In some embodiments, the form is a form AQ characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 17.6 ± 0.2, 19.0 ± 0.2, 22.8 ± 0.2, 17.6 ± 0.2, 11.4 ± 0.2, 17.3 ± 0.2, 17.1 ± 0.2, 3.8 ± 0.2, 6.2 ± 0.2, and 16.4 ± 0.2 2θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AQ characterized by a TGA thermal analysis showing a weight loss of about 10.0% up to 180 °C. In some embodiments, the solvated crystalline form is a form AQ characterized by a DSC thermal analysis including an endothermic peak at about 145 °C. In some embodiments, the solvated crystalline form is a form AQ characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 34; b. a TGA thermograph showing a weight loss of about 10.0% up to 180 °C; and c. a DSC thermograph including an endothermic peak at about 145 °C. In some embodiments, the solvated crystalline form is a form AQ as described herein. In some embodiments, form AQ is pure. In some embodiments, form AQ is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AQ is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. AR form In some embodiments, the solvated crystalline form is 2- tert - It is a butoxyethanol solvate. In some embodiments, 2- tert- The butoxyethanol solvate is of form AR. In some embodiments, the solvated crystalline form is of form AR characterized substantially by an XRPD pattern as shown in FIG. 35. In some embodiments, form AR is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 35. In some embodiments, form AR is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in Table 36. Representative XRPD peaks of form AR are as follows: Table 36 In some embodiments, the morphology is an AR morphology characterized by an XRPD pattern comprising at least two peaks selected from the group consisting of 2θ, approximately 17.1 ± 0.2, 5.7 ± 0.2, 16.2 ± 0.2, 19.3 ± 0.2, 19.0 ± 0.2, 11.4 ± 0.2, 12.4 ± 0.2, 14.7 ± 0.2, 20.2 ± 0.2 and 22.9 ± 0.2. In some embodiments, the form is an AR characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of about 17.1 ± 0.2, 5.7 ± 0.2, 16.2 ± 0.2, 19.3 ± 0.2, 19.0 ± 0.2, 11.4 ± 0.2, 12.4 ± 0.2, 14.7 ± 0.2, 20.2 ± 0.2 and 22.9 ± 0.2 θ. In some embodiments, the XRPD spectrum is obtained using a Cu Kα source. In some embodiments, the solvated crystalline form is a form AR characterized by a TGA thermal analysis showing a weight loss of about 26.0% up to 180 °C. In some embodiments, the solvated crystalline form is a form AR characterized by a DSC thermal analysis including at least one endothermic peak at about 50 °C, about 72 °C, or about 135 °C. In some embodiments, the solvated crystalline form is a form AR characterized by a DSC thermal analysis including endothermic peaks at about 50 °C, about 72 °C, and about 135 °C. In some embodiments, the solvated crystalline form is a form AR characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 35; b. a TGA thermograph showing a weight loss of about 26.0% up to 180 °C; and c. a DSC thermograph including at least one endothermic peak at about 50 °C, about 72 °C, or about 135 °C. In some embodiments, the solvated crystalline form is a form AR characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 35; b. a TGA thermograph showing a weight loss of about 26.0% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 50 °C, about 72 °C, and about 135 °C. In some embodiments, the solvated crystalline form is a form AR described herein. In some embodiments, the AR form is pure. In some embodiments, the AR form is substantially free of other solid forms (e.g., amorphous solids) described herein. In some embodiments, the purity of the AR form is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Metastable crystal form In some embodiments, the crystal form is a metastable crystal form. In some embodiments, the metastable crystal form is the form B / AF, form K, form AB, form AM, form AN, form AO, or form P described herein. In some embodiments, the metastable crystal form is the form B / AF (free base form B and form AF were the same crystal form). In some embodiments, the metastable crystal form is the form K. In some embodiments, the metastable crystal form is the form AB. In some embodiments, the metastable crystal form is the form AM. In some embodiments, the metastable crystal form is the form AN. In some embodiments, the metastable crystal form is the form AO. In some embodiments, the metastable crystal form is the form P. The various metastable crystal forms described herein are summarized as follows: Type B / AF In some embodiments, the metastable crystalline form is substantially a form B / AF characterized by an XRPD pattern as shown in FIG. 36. In some embodiments, the metastable crystalline form is a form B / AF described herein. In some embodiments, the form B / AF is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 36. In some embodiments, form B / AF is pure. In some embodiments, form B / AF is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form B / AF is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form K In some embodiments, the metastable crystal form is substantially a form K characterized by an XRPD pattern as shown in FIG. 37. In some embodiments, the metastable crystal form is a form K described herein. In some embodiments, form K is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 37. In some embodiments, form K is pure. In some embodiments, form K is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form K is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AB In some embodiments, the metastable crystal form is substantially form AB, characterized by an XRPD pattern as shown in FIG. 38. In some embodiments, the metastable crystal form is form AB as described herein. In some embodiments, form AB is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 38. In some embodiments, form AB is pure. In some embodiments, form AB is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AB is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AM In some embodiments, the metastable crystalline form is a type AM characterized substantially by an XRPD pattern as shown in FIG. 39. In some embodiments, the metastable crystalline form is a type AM described herein. In some embodiments, the type AM is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 39. In some embodiments, the form AM is pure. In some embodiments, the form AM is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of the form AM is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AN In some embodiments, the metastable crystalline form is substantially a form AN characterized by an XRPD pattern as shown in FIG. 40. In some embodiments, the metastable crystalline form is a form AN described herein. In some embodiments, form AN is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 40. In some embodiments, form AN is pure. In some embodiments, form AN is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form AN is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form AO In some embodiments, the metastable crystalline form is a form AO characterized substantially by an XRPD pattern as shown in FIG. 41. In some embodiments, the metastable crystalline form is a form AO described herein. In some embodiments, the form AO is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 41. In some embodiments, the form AO is pure. In some embodiments, the form AO is substantially free of other solid forms (e.g., amorphous solids) described herein. In some embodiments, the purity of the form AO is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Form P In some embodiments, the metastable crystal form is substantially form P, which is characterized by an XRPD pattern as shown in FIG. 42. In some embodiments, form P is characterized by an XRPD pattern comprising one, two, three, four, five, six, seven, eight, nine, ten, or all of the characteristic XRPD peaks as shown in FIG. 42. In some embodiments, the metastable crystal form is a form P characterized by a TGA thermal analysis showing about 5.6% weight loss up to 180 °C. In some embodiments, the metastable crystal form is a form P characterized by a DSC thermal analysis including at least one endothermic peak at about 78 °C or about 157 °C. In some embodiments, the metastable crystal form is a form P characterized by a DSC thermal analysis including endothermic peaks at about 78 °C and about 157 °C. In some embodiments, the metastable crystal form is a form P characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 42; b. a TGA thermal analysis showing about 5.6% weight loss up to 180 °C; and c. a DSC thermal analysis including at least one endothermic peak at about 78 °C or about 157 °C. In some embodiments, the metastable crystal form is a form P characterized by two or more of the following: a. a. an XRPD pattern substantially as shown in FIG. 42; b. a TGA thermograph showing a weight loss of about 5.6% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 78 °C and about 157 °C. In some embodiments, the crystalline form is form P as described herein. In some embodiments, form P is pure. In some embodiments, form P is substantially free of other solid forms described herein (e.g., amorphous solid). In some embodiments, the purity of form P is about 95% or more, about 96% or more, about 97% or more, about 98% or more, about 99% or more, about 99.5% or more, or about 99.9% or more. Pharmaceutical composition / preparation The solid form of the compound of formula (I) as disclosed herein may be formulated according to standard pharmaceutical practice for use in therapeutic combinations for the therapeutic treatment (including prophylactic treatment) of hyperproliferative diseases in mammals, including humans. The present disclosure provides a pharmaceutical composition comprising the solid form of the compound of formula (I) as disclosed herein and one or more pharmaceutically acceptable carriers, lubricants, diluents, or excipients. Suitable carriers, diluents, lubricants, and excipients are well known to those skilled in the art and include materials such as carbohydrates, waxes, water-soluble and / or water-swellable polymers, hydrophilic or hydrophobic materials, gelatin, oils, solvents, water, etc. The formulation can be prepared using conventional dissolution and mixing procedures. The compounds of the present invention are generally formulated into pharmaceutical formulations to provide an easily controllable dosage of the drug and to enable the patient to comply with the prescribed regimen. Pharmaceutical compositions (or formulations) for application may be packaged in various ways depending on the method used to administer the drug. Generally, distributed articles comprise a container containing a pharmaceutical formulation in a suitable form. Suitable containers are known to a person skilled in the art and include materials such as bottles (plastic and glass), sachets, ampoules, plastic bags, metal cylinders, etc. The container may also include a tamper-proof assembly to prevent unauthorized access to the contents of the package. Additionally, the container is affixed with a label describing the contents of the container. The label may also include appropriate precautions. Pharmaceutical formulations of the compound of formula (I) as disclosed herein in solid form may be prepared for various routes and types of administration in the form of lyophilized formulations, ground powders, or aqueous solutions using pharmaceutically acceptable diluents, carriers, excipients, lubricants, or stabilizers (Remington's Pharmaceutical Sciences (1995) 18th edition, Mack Publ. Co., Easton, Pa.). Formulation may be performed by mixing with a physiologically acceptable carrier—that is, a carrier that is non-toxic to the recipient at the dose and concentration used—at ambient temperature at an appropriate pH and at a desired degree of purity. The pH of the formulation may be in the range of about 3 to about 8, although it depends primarily on the specific use and concentration of the compound. Pharmaceutical preparations are preferably in a sterile state. In particular, preparations to be used for in vivo administration must be in a sterile state. Such sterilization is easily achieved by filtration through a sterile filter membrane. Pharmaceutical preparations can generally be stored as solid compositions, tablets, pills, capsules, lyophilized preparations, or aqueous solutions. The pharmaceutical formulations of the present disclosure may be administered and administered in a manner consistent with best medical practice, namely, in terms of amount, concentration, schedule, course, vehicle, and method of administration. Factors to be considered in this context include the specific disorder being treated, the clinical condition of the individual patient, the cause of the disorder, the site of drug delivery, the method of administration, the administration schedule, and other factors known to healthcare professionals. Permitted diluents, carriers, excipients, and stabilizers are non-toxic to the recipient at the dosage and concentration used, and include buffers, e.g., phosphates, citrates, and other organic acids; antioxidants, including ascorbic acid and methionine; preservatives (e.g., octadecyldimethylbenzylammonium chloride; hexamethonium chloride; benzalkonium chloride, benzethonium chloride; phenol, butyl, ethanol, or benzyl alcohol; alkyl parabens, e.g., methyl or propyl paraben; catechol; resorcinol; cyclohexanol; 3-pentanol; and m-cresol); low molecular weight (less than about 10 residues) polypeptides; proteins, e.g., serum albumin, gelatin, or immunoglobulin; hydrophilic polymers, e.g., polyvinylpyrrolidone; amino acids, e.g., glycine, glutamine, asparagine, histidine, arginine, or lysine; It comprises monosaccharides, disaccharides, and other carbohydrates including glucose, mannose, or dextrin; chelating agents, such as EDTA; sugars, such as lactose, sucrose, mannitol, trehalose, or sorbitol; salt-forming counterions, such as sodium; metal complexes (e.g., Zn-protein complexes); and / or nonionic surfactants, such as polyethylene glycol (PEG), including TWEEN™, PLURONICS™, or PEG400, including TWEEN 80. The active pharmaceutical ingredient may also be captured in microcapsules prepared by, for example, coacervation technology or interfacial polymerization, such as hydroxymethylcellulose or gelatin-microcapsules and poly-(methyl methacrylate) microcapsules, respectively, in colloidal drug delivery systems (e.g., liposomes, albumin microspheres, microemulsions, nanoparticles, and nanocapsules) or macroemulsions. This technology is disclosed in Remington's Pharmaceutical Sciences 18th edition, (1995) Mack Publ. Co., Easton, Pa. Examples of other drug formulations are Liberman, HA and Lachman, L., Eds., Pharmaceutical Dosage Forms, Marcel Decker, Vol 3, 2.sup.nd Ed., New York, NY can be found. The tablet may comprise one or more pharmaceutically acceptable carriers, lubricants, diluents, or excipients selected from microcrystalline cellulose, lactose, sodium starch glycolate, and magnesium stearate. Pharmaceutically acceptable lubricants may be selected from silicon dioxide, powdered cellulose, microcrystalline cellulose, metal stearate, sodium aluminosilicate, sodium benzoate, calcium carbonate, calcium silicate, corn starch, magnesium carbonate, asbestos-free talc, stearowet C, starch, starch 1500, magnesium lauryl sulfate, magnesium oxide, and combinations thereof. Pharmaceutical formulations include those suitable for the routes of administration described in detail herein. Formulations may conveniently exist in unit formulations and may be manufactured by any method widely known in the pharmaceutical field. Techniques and formulations are generally found in Remington's Pharmaceutical Sciences, 18th edition (1995), Mack Publishing Co., Easton, PA. Such methods include the step of associating an active ingredient with a carrier constituting one or more auxiliary ingredients. Generally, formulations are manufactured by uniformly and tightly binding the active ingredient with a liquid carrier, a fine solid carrier, or both, and then, if necessary, molding the product. The pharmaceutical composition may be in the form of a sterile injectable preparation, e.g., a sterile injectable aqueous or oily suspension. This suspension may be formulated according to techniques known in the art using the suitable dispersants or wetting agents and suspending agents mentioned above. The sterile injectable preparation may be a solution or suspension in a non-toxic, parenterally acceptable diluent or solvent, e.g., a solution in 1,3-butanediol, or may be prepared from a lyophilized powder. Among the acceptable vehicles and solvents that may be used are water, Ringer's solution, and isotonic sodium chloride solution. Additionally, sterile fixative oils may be conventionally used as solvents or suspension media. For this purpose, any bland fixative oil comprising synthetic monoglycerides or diglycerides may be used. Additionally, fatty acids such as oleic acid may likewise be used in the preparation of the injectable preparation. Treatment and Usage Methods The solid form and pharmaceutical composition containing the same described herein are useful as Ras inhibitors. In one embodiment, the solid form and pharmaceutical composition described herein are useful as KRas inhibitors. In another embodiment, the solid form and pharmaceutical composition described herein are useful as NRas inhibitors. In another embodiment, the solid form and pharmaceutical composition described herein are useful as HRas inhibitors. In one embodiment, the solid form and pharmaceutical composition described herein are useful as G12D Ras inhibitors and G12D KRas inhibitors. The present specification provides a method for inhibiting Ras activity (e.g., KRas activity) in cells by contacting cells, e.g., in vitro cells, with the solid form and pharmaceutical composition described herein. In another embodiment, the activity is mutant G12D KRas activity. The present specification further provides a method for treating cancer containing a KRas mutation, said method comprising the step of administering an effective amount of a solid form or pharmaceutical composition as described herein to a patient suffering from such cancer. In one embodiment, the KRas mutation is KRas G12D It is a mutation. In one embodiment, the method is KRas G12D The method further comprises the step of testing a sample from a patient (e.g., as presented herein) for the absence or presence of a mutation prior to administration of the solid form or pharmaceutical composition described herein. In one such embodiment, the solid form or pharmaceutical composition described herein is such that the patient sample is KRas G12D It is administered to the patient after it is determined to be positive for a mutation (e.g., the presence of it). The cancer treatment methods described herein include acute myeloid leukemia, cancer of adolescents, pediatric adrenocortical carcinoma, AIDS-related cancers (e.g., lymphoma and Kaposi's sarcoma), anal cancer, appendiceal cancer, astrocytoma, atypical rhabdomyoplastic tumor, basal cell carcinoma, cholangiocarcinoma, bladder cancer, bone cancer, brainstem glioma, brain tumor, breast cancer, bronchial tumor, Burkitt lymphoma, carcinoid tumor, embryonic tumor, germ cell tumor, primary lymphoma, cervical cancer, pediatric cancer, chordoma, heart tumor, chronic lymphocytic leukemia (CLL), chronic myeloid leukemia (CML), chronic myeloproliferative disorder, colon cancer, colorectal cancer, craniopharyngioma, cutaneous T-cell lymphoma, extrahepatic cholangiocarcinoma in situ (DCIS), embryonic tumor, CNS cancer, endometrial cancer, ependymoma, esophageal cancer, sensory neuroblastoma, Ewing sarcoma, extracranial germ cell tumor, extragonadal germ cell Tumors, eye cancer, fibrous histiocytoma of bone, gallbladder cancer, gastric cancer, gastrointestinal carcinoid tumor, gastrointestinal stromal tumor (GIST), germ cell tumor, gestational choriocarcinoma, hairy cell leukemia, head and neck cancer, heart cancer, liver cancer, Hodgkin lymphoma, hypopharyngeal cancer, intraocular melanoma, islet cell tumor, pancreatic neuroendocrine tumor, kidney cancer, laryngeal cancer, lip and oral cancer, lobular carcinoma in situ (LCIS), lung cancer, lymphoma, metastatic squamous neck cancer with latent primary, midline carcinoma, oral cancer, multiple endocrine neoplasm syndrome, multiple myeloma / plasma cell neoplasm, mycosarcoma, myelodysplastic syndrome, myelodysplastic / myeloproliferative neoplasm, multiple myeloma, Merkel cell carcinoma, malignant mesothelioma, malignant fibrous histiocytoma and osteosarcoma of bone, nasal and paranasal sinus cancer, nasopharyngeal cancer, neuroblastoma, non-Hodgkin Lymphoma, Non-small cell lung cancer (NSCLC), Oral cancer, Oropharyngeal cancer, Ovarian cancer, Pancreatic cancer, Papillomatosis, Paraganglioma, Parathyroid cancer, Penile cancer, Pharyngeal cancer, Pleuropulmonary blastoma, Primary central nervous system (CNS) lymphoma, Prostate cancer, Rectal cancer, Transitional cell carcinoma, Retinoblastoma, Rhabdomyosarcoma, Salivary gland cancer, Skin cancer, Small cell lung cancer, Small intestine cancer, Soft tissue sarcoma, T-cell lymphoma, Testicular cancer, Throat cancer, Thymoma and thymic carcinoma, Thyroid cancer,This concerns the treatment of cancers such as transitional cell carcinoma of the renal pelvis and ureter, trophoblastic tumors, cancers specific to children, urethral cancer, uterine sarcoma, vaginal cancer, vulvar cancer, or virus-induced cancer. In some embodiments, the cancer is blood cancer, pancreatic cancer, MYH-related polyposis, colorectal cancer, or lung cancer. In one embodiment, the cancer is lung cancer, colorectal cancer, appendiceal cancer, or pancreatic cancer. In one embodiment, the cancer is pancreatic cancer, lung cancer, or colon cancer. The lung cancer may be adenocarcinoma, non-small cell lung cancer (NSCLC), or small cell lung cancer (SCLC). In one embodiment, the cancer is colorectal cancer. In another embodiment, the cancer is pancreatic cancer. In one embodiment, the cancer is lung adenocarcinoma. The method provided in this specification is KRas G12D It may also include testing a sample from a patient for the absence or presence of a mutation prior to administration of the solid form or pharmaceutical composition described herein. In one embodiment, the solid form or pharmaceutical composition is such that the patient sample is KRas G12D It is administered to the patient after indicating the presence of a mutation. In one embodiment, the solid form or pharmaceutical composition described herein is a patient sample KRas G12D If it does not contain mutations, it is not administered. In one embodiment, the cancer is pancreatic cancer, lung cancer, or colorectal cancer. In another embodiment, the cancer is tissue-independent (KRas G12D (Including mutations). In one such embodiment, pancreatic cancer, lung cancer, or colorectal cancer is KRas G12D Includes mutations. KRas of patients suffering from such lung cancer G12D A method for treating lung cancer containing mutations is further provided herein. In one such embodiment, this involves a patient's KRas with such lung cancer G12DA method (M1) for treating lung cancer containing mutations comprises the step of administering an effective amount of a solid form or pharmaceutical composition described herein to a patient. In one embodiment, the lung cancer is non-small cell lung carcinoma (NSCLC). In one embodiment, the lung cancer is adenocarcinoma, NSCLC, squamous cell lung carcinoma (SCLC), or large cell lung carcinoma. In one embodiment, the lung cancer is adenocarcinoma, NSCLC, or SCLC. In another embodiment, the lung cancer is small cell lung carcinoma. In another embodiment, the lung cancer is an adenoma, carcinoid tumor, or undifferentiated carcinoma. The lung cancer may be stage 1 or stage 2 lung cancer. In one embodiment, the lung cancer is stage 3 or stage 4 lung cancer. The method provided herein comprises the administration of a compound as a primary line (1L) therapy. KRas of patients suffering from such pancreatic cancer G12D A method for treating pancreatic cancer containing a mutation is further provided herein. In one such embodiment, this involves a patient with pancreatic cancer KRas G12D A method (M2) for treating pancreatic cancer containing mutations comprises the step of administering an effective amount of a solid form or pharmaceutical composition described herein to a patient. In one embodiment, the patient has previously been treated with radiation and one or more chemotherapy agents. In one embodiment, the pancreatic cancer is stage 0, stage 1, or stage 2. In another embodiment, the pancreatic cancer is stage 3 or stage 4. KRas of patients suffering from such colon cancer G12D A method for treating colon cancer containing a mutation is further provided herein. In one such embodiment, this relates to a patient's KRas with colon cancer G12D A method (M3) for treating colon cancer containing mutations comprises the step of administering an effective amount of a solid form or pharmaceutical composition described herein to a patient. In one embodiment, the colon cancer is stage 1 or stage 2. In another embodiment, the colon cancer is stage 3 or stage 4. In one embodiment of the method M1, M2 and M3 as described in this specification, the method further comprises the following step: (a) KRas in a sample taken from a patient suspected of being diagnosed with cancer G12D Steps for determining the absence or presence of a mutation; and (b) A step of administering an effective amount of the solid form or pharmaceutical composition described in this specification to a patient. KRas G12D A method for treating cancer of any tissue type containing mutations is further provided herein. In one embodiment of such a method, the method comprises the following steps: (a) KRas in a sample taken from a patient suspected of being diagnosed with cancer G12D Steps for determining the absence or presence of a mutation; and (b) A step of administering an effective amount of the solid form or pharmaceutical composition described in this specification to a patient. In one embodiment of this method, the patient is diagnosed with the cancer described herein. In another embodiment of this method, the sample is a tumor sample taken from the subject. In one embodiment, the sample is taken before the administration of any therapy. In another embodiment, the sample is taken before the administration of the solid form or pharmaceutical composition described herein and after the administration of another chemotherapy agent. In another embodiment of this method, the solid form or pharmaceutical composition described herein is administered as provided herein (e.g., orally or intravenously). Solid forms or pharmaceutical compositions described herein for use as therapeutically active substances are also provided herein. In one such embodiment, the solid form or pharmaceutical composition is Kras G12D It may be for the therapeutic treatment of cancer containing mutations. In this specification, KRas G12DA solid form or pharmaceutical composition described herein for the therapeutic and / or prophylactic treatment of cancers containing mutations is further provided. In one embodiment, the solid form or pharmaceutical composition is KRas G12D It is used in the manufacture of agents for the therapeutic treatment of cancers containing mutations. The present specification further provides for the use of the solid form or pharmaceutical composition described herein in the manufacture of agents for inhibiting tumor metastasis. The present specification further provides a method for inhibiting tumor metastasis, the method comprising the step of administering a therapeutically effective amount of the solid form or pharmaceutical composition described herein to a patient having a tumor. In one embodiment, inhibition is KRas G12D It is the suppression of a tumor containing a mutation. In another embodiment, the suppression of tumor metastasis in the patient described herein results in a reduction in tumor size. In another embodiment, the suppression of tumor metastasis in the patient described herein results in the stabilization of tumor size (e.g., no further growth). In another embodiment, the suppression of tumor metastasis in the patient described herein results in the alleviation of cancer and / or its symptoms. The present specification further provides a method for inhibiting the proliferation of a cell population, said method comprising the step of bringing the cell population into contact with a solid form or pharmaceutical composition described herein. In one embodiment, the cell population is in a human patient. In another embodiment, the cell population is KRas G12D Includes mutations. The present specification further provides a method for inhibiting KRas in a patient requiring treatment, comprising the step of administering a therapeutically effective amount of the solid form or pharmaceutical composition described herein to the patient. In one embodiment, the inhibited KRas is KRas G12Dis. In another embodiment, KRas inhibition causes a reduced tumor size. In another embodiment, KRas inhibition causes alleviation of cancer and / or its symptoms. The present specification further provides a method for controlling the activity of a KRas mutant protein, said method comprising the step of reacting the mutant protein with a solid form or pharmaceutical composition described herein. In one embodiment, the mutant protein is KRas G12D Includes mutations. In one embodiment, the activity of KRas is reduced after contact with the solid form or pharmaceutical composition described herein. In another embodiment, downregulation of the activity of the KRas mutant protein treats the cancer described herein in the patient described herein. In another embodiment, downregulation of the activity of the KRas mutant protein causes a reduced tumor size. In another embodiment, downregulation of the activity of the KRas mutant protein causes alleviation of the cancer and / or symptoms thereof described herein. In some embodiments, the method provided herein is for the activation of KRas in cells G12D By contacting the cell with an amount of the solid form or pharmaceutical composition described herein sufficient to inhibit Kras in the cell G12D It includes a step of inhibiting activity. In some embodiments, the method provided herein inhibits the activity of KRas in tissues. G12D By contacting the tissue with an amount of the solid form or pharmaceutical composition described herein sufficient to inhibit KRas in the tissue G12D It includes a step of inhibiting activity. In some embodiments, the method provided herein inhibits the activity of KRas in a patient. G12D By bringing the patient into contact with a solid form or pharmaceutical composition described herein in an amount sufficient to inhibit KRas in the patient G12D It includes a step of inhibiting activity. In this specification, labeled KRasG12D A method for producing a mutant protein is further provided, said method is KRas G12D By reacting the mutant protein with the labeled solid form or pharmaceutical composition described herein, the labeled KRas G12D It includes the step of generating a mutant protein. In one embodiment, the label is a contrast agent. In one embodiment, labeled KRas G12D It can be used to detect the absence or presence of G12D mutant KRas in patient samples, thereby detecting the presence or absence of cancer mediated by mutant KRas. A method for inhibiting Ras-mediated cell signaling is further provided herein. In one embodiment, the method comprises contacting cells with an effective amount of the solid form or pharmaceutical composition disclosed herein. Inhibition of Ras-mediated signaling may be evaluated and demonstrated by various methods known in the art. Non-limiting examples include (a) a decrease in the GTPase activity of Ras; (b) a decrease in GTP binding affinity or an increase in GDP binding affinity; (c) an increase in the K-off of GTP or a decrease in the K-off of GDP; (d) a decrease in the level of downstream signaling molecules in the Ras pathway, e.g., a decrease in the level of pMEK; and / or (e) a decrease in the binding of the Ras complex to downstream signaling molecules, including but not limited to Raf. Kits and commercially available assays may be used to determine one or more of the above. KRas mutations, including the G12D mutant, have also been identified in hematological malignancies (e.g., cancers affecting the blood, bone marrow, and / or lymph nodes). Accordingly, certain embodiments relate to administering the solid form or pharmaceutical composition described herein to a patient requiring treatment for a hematological malignancy. Such malignancies include, but are not limited to, leukemias and lymphomas. For example, the compounds currently disclosed may be used to treat diseases such as acute lymphoblastic leukemia (ALL), acute myeloid leukemia (AML), chronic lymphocytic leukemia (CLL), small lymphocytic lymphoma (SLL), chronic myeloid leukemia (CML), acute mononuclear leukemia (AMoL), and / or other leukemias. In other embodiments, the compounds described herein or pharmaceutically acceptable salts thereof are useful for the treatment of lymphomas such as Hodgkin lymphoma or all subtypes of non-Hodgkin lymphoma. Tumor or cancer is KRas G12D Determination of whether a mutation is present may be undertaken by evaluating the nucleotide sequence encoding the KRas protein, evaluating the amino acid sequence of the KRas protein, or evaluating the characteristics of the putative KRas mutant protein. The sequence of wild-type human KRas (e.g., accession number NP203524) is known in the art. Methods for detecting mutations in KRas nucleotide sequences are known to those skilled in the art. Such methods include, but are not limited to, polymerase chain reaction-restriction fragment length polymorphism (PCR-RFLP) assays, polymerase chain reaction-single strand conformation polymorphism (PCR-SSCP) assays, real-time PCR assays, PCR sequencing, mutant allele-specific PCR amplification (MASA) assays, direct sequencing, primer expansion reactions, electrophoresis, oligonucleotide ligation assays, hybridization assays, TaqMan assays, SNP genotyping assays, high-resolution melting assays, and microarray analysis. In some embodiments, samples are evaluated for G12d KRas mutations by real-time PCR. In real-time PCR, a fluorescent probe specific to KRas G12D mutations is used. If a mutation is present, the probe binds and fluorescence is detected. In some embodiments, KRas G12D mutations are identified using a direct sequencing method of a specific region (e.g., exon 2 and / or exon 3) in the KRas gene. This technology will identify all possible mutations in the sequenced region. Tumor or cancer is KRas G12D Various samples may be used to determine whether a mutation is present. In some embodiments, the sample is taken from a subject having a tumor or cancer. In some embodiments, the sample is a new tumor / cancer sample. In some embodiments, the sample is a frozen tumor / cancer sample. In some embodiments, the sample is a formalin-fixed paraffin-embedded sample. In some embodiments, the sample is processed into a cell lysate. In some embodiments, the sample is processed into DNA or RNA. The present specification further provides for the use of the solid form or pharmaceutical composition described herein in the manufacture of a drug for the treatment of cancer. In some embodiments, the drug is formulated for oral administration. In some embodiments, the drug is formulated for injection (e.g., IV administration). In some embodiments, cancer is KRas G12D Includes mutations. In some embodiments, the cancer is blood cancer, pancreatic cancer, MYH-associated polyposis, colorectal cancer, or lung cancer. In one embodiment, the cancer is lung cancer, colorectal cancer, or pancreatic cancer. In one embodiment, the cancer is colorectal cancer. In another embodiment, the cancer is pancreatic cancer. In some embodiments, the cancer is lung adenocarcinoma. In some embodiments, the use of a compound as described herein, or a stereoisomer, rotational obstruction isomer, tautomer, or pharmaceutically acceptable salt thereof, is provided in the manufacture of a drug for inhibiting tumor metastasis. Combination therapy The solid forms and pharmaceutical compositions described herein may be used alone or in combination with therapeutic agents for the treatment of diseases or disorders described herein. The second agent of the pharmaceutical combination formulation or drug therapy preferably has an activity complementary to the solid form or pharmaceutical composition described herein so as not to have adverse effects on each other. The combination therapy may be demonstrated to provide a "synergy" and be "synergistic," that is, the effect achieved when the active ingredients are used together is greater than the sum of the effects produced by using them individually. Combination therapy may be administered concurrently or sequentially. When administered sequentially, combination therapy may be administered in two or more doses. Combination therapy includes co-administration using separate preparations or a single pharmaceutical preparation, and sequential administration in any order, wherein preferably, there is a period during which two (or all) active agents simultaneously exhibit biological activity. The combination therapy described herein includes the administration of the solid form or pharmaceutical composition described herein and the use of at least one other treatment method. The amounts and relative timing of administration of the solid form or pharmaceutical composition and other pharmaceutical active agent(s) described herein will be selected to achieve a desired combined therapeutic effect. In various embodiments of the method, additional therapeutic agents are epidermal growth factor receptor (EGFR) inhibitors, phosphatidylinositol kinase (PI3K) inhibitors, insulin-like growth factor receptor (IGF1R) inhibitors, Janus kinase (JAK) inhibitors, Met kinase inhibitors, SRC family kinase inhibitors, mitogen-activated protein kinase (MEK) inhibitors, extracellular signal-modulated kinase (ERK) inhibitors, topoisomerase inhibitors (e.g., irinotecan, or etoposide, or doxorubicin), taxanes (antimicrotubule agents including paclitaxel and docetaxel), antimetabolites (e.g., 5-FU or gemcitabine), or alkylating agents (e.g., cisplatin or cyclophosphamide), or taxanes. In some embodiments, the additional therapeutic agent is an epidermal growth factor receptor (EGFR) inhibitor such as erlotinib or afatinib. In some embodiments, the additional therapeutic agent is gefitinib, osimertinib, or dacomitinib. In some embodiments, the additional therapeutic agent is a monoclonal antibody such as cetuximab (Erbitux) or panitumumab (Vectivix). In some embodiments, the GFR inhibitor is a dual or pan-HER inhibitor. In other embodiments, the additional therapeutic agent is a phosphatidylinositol-3-kinase (PI3K) inhibitor such as GDC-0077, GDC-0941, MLN1117, BYL719 (alpelisib), or KM120 (bupalisib). GDC-0941 refers to 2-(1H-indazole-4-yl)-6-(4-methanesulfonyl-piperazine-1-ylmethyl)-4-morpholine-4-yl-thieno[3,2-d]pyrimidine or a salt thereof (e.g., bismesylate salt). In another embodiment, the additional therapeutic agent is an insulin-like growth factor receptor (IGF1R) inhibitor. For example, in some embodiments, the insulin-like growth factor receptor (IGF1R) inhibitor is NVP-AEW541. In other embodiments, the additional therapeutic agent is IGOSI-906 (lincitinib) or BMS-754807, or in other embodiments, the additional therapeutic agent is a neutralizing monoclonal antibody specific to IGF1R, such as AMG-479 (ganitumab), CP-751,871 (pigitumab), IMC-A12 (siksutumab), MK-0646 (dalotuzumab), or R-1507 (lovatumab). In some other embodiments, the additional therapeutic agent is a Janus kinase (JAK) inhibitor. In some embodiments, the additional therapeutic agent is CYT387, GLPG0634, baricitinib, restaurtinib, momelotinib, pacritinib, ruxolitinib, or TG101348. In some other embodiments, the additional therapeutic agent is an anti-glypican 3 antibody. In some embodiments, the anti-glypican 3 antibody is codrituzumab. In some other embodiments, the additional therapeutic agent is an antibody-drug conjugate (ADC). In some embodiments, the ADC is polatuzumab vedotin, RG7986, RG7882, RG6109, or RO7172369. In some other embodiments, the additional therapeutic agent is an MDM2 antagonist. In some embodiments, the MDM2 antagonist is isadanutlin. In some other embodiments, the additional therapeutic agent is an antibody acting on CD40. In some embodiments, the antibody acting on CD40 is selicrelumab (RG7876). In some other embodiments, the additional therapeutic agent is a bispecific antibody. In some embodiments, the bispecific antibody is RG7828 (BTCT4465A), RG7802, RG7386 (FAP-DR5), RG6160, RG6026, ERY974, or anti-HER2 / CD3. In some other embodiments, the additional therapeutic agent is a targeted immunocytokine. In some embodiments, the targeted immunocytokine is RG7813 or RG7461. In some other embodiments, the additional therapeutic agent is an antibody targeting the colony-stimulating factor-1 receptor (CSF-1R). In some embodiments, the CSF-1R antibody is emactuzumab. In some other embodiments, the additional treatment is a personalized cancer vaccine. In some embodiments, the personalized cancer vaccine is RG6180. In some other embodiments, the additional therapeutic agent is an inhibitor of BET (bromodomain and extraterminal family) proteins (BRD2 / 3 / 4 / T). In some embodiments, the BET inhibitor is RG6146. In some other embodiments, the additional therapeutic agent is an antibody designed to bind to TIGIT. In some embodiments, the anti-TIGIT antibody is RG6058 (MTIG7192A). In some other embodiments, the additional therapeutic agent is a selective estrogen receptor degrader (SERD). In some other embodiments, the SERD is RG6047 (GDC-0927) or RG6171 (GDC-9545, Ziredestrant). In some other embodiments, the additional therapeutic agent is a MET kinase inhibitor such as crizotinib, tivantinib, AMG337, cabozantinib, or foretinib. In other embodiments, the additional therapeutic agent is a neutralizing monoclonal antibody against MET such as onartuzumab. In another embodiment, the additional therapeutic agent is an SRC family non-receptor tyrosine kinase inhibitor. For example, in some embodiments, the additional therapeutic agent is an inhibitor of a subfamily of SRC family non-receptor tyrosine kinases. In this regard, exemplary inhibitors include dasatinib. In this regard, other examples include ponatinib, saracatinib, and bosutinib. In another embodiment, the additional therapeutic agent is a mitogen-activated protein kinase (MEK) inhibitor. In some of these embodiments, the mitogen-activated protein kinase (MEK) inhibitor is trametinib, selumetinib, COTELLIC® (cobimetinib), PD0325901, or RO5126766. In another embodiment, the MEK inhibitor is GSK-1120212, also known as trametinib. In another embodiment, the additional therapeutic agent is an extracellular signal-modulating kinase (ERK) inhibitor. In some of these embodiments, the mitogen-activating protein kinase (MEK) inhibitor is SCH722984 or GDC-0994. In another embodiment, the protein kinase inhibitor is taselisib, ipatasertip, GDC-0575, GDC-5573 (HM95573), RG6114 (GDC-0077), CKI27, afatinib, axitinib, atenolizumab, bevacizumab, vostrutinib, cetuximab, crizotinib, dasatinib, erlotinib, fostamatinib, gefitinib, imatinib, lapatinib, lenvatinib, ibrutinib, nilotinib, panitumumab, pazopanib, pegaptanib, ranibizumab, ruxolitinib, sorafenib, sunitinib, SU6656, trastuzumab, nofacitinib, vandetanib, or vemurafenib. In yet another embodiment, the additional therapeutic agent is a topoisomerase inhibitor. In some of these embodiments, the topoisomerase inhibitor is irinotecan. In some additional embodiments, the additional therapeutic agent is a taxane. Exemplary taxanes include taxol and docetaxel. In addition to the above additional therapeutic agents, other chemotherapy agents are currently known in the art and may be used in combination with the solid forms and pharmaceutical compositions described herein. In some embodiments, the chemotherapy agent is selected from the group consisting of mitotic inhibitors, alkylating agents, antimetabolites, intercalating antibiotics, growth factor inhibitors, cell cycle inhibitors, enzymes, topoisomerase inhibitors, biological response modulators, antihormones, angiogenesis inhibitors, and antiandrogens. Non-limiting examples include chemotherapy agents, cytotoxic agents, and non-peptide small molecules, such as Gleevec® (imatnib mesylate), Belcade® (bortezomib), Casodex (bicalutamide), Iressa® (gefitinib), and Adriamycin, as well as a host of chemotherapy agents. Non-limiting examples of chemotherapy agents include alkylating agents such as thiotepa and cyclophosphamide (CYTOXAN™); alkyl sulfonates such as busulfan, improsulfan, and piposulfan; aziridines such as benzodopa, carboquone, meturedopa, and uredopa; ethyleneimines and methyl melamines including altretamine, triethylenemelamine, triethylenephosphoramide, triethylenethiophosphoramide, and trimethylolmelamine; Nitrogen mustards such as chlorambucil, chlornafazine, cyclophosphamide, estramustine, ifosfamide, mechlorethamine, mechlorethamine oxide hydrochloride, melphalan, novelichine, phenesterine, prednimustine, trophosphamide, and uracil mustard; nitrosoureas such as carmustine, chlorozotocin, potemustine, lomustine, nimustine, and ranimustine; Antibiotics such as aclaxinomycin, actinomycin, autramycin, azacerin, bleomycin, cactinomycin, caliceamycin, carrabicin, carminomycin, carcinophilin, Casodex™, chromomycin, dactinomycin, daunorubicin, detorubicin, 6-diazo-5-oxo-L-norleucine, doxorubicin, epirubicin, esorubicin, idarubicin, marcelomycin, mitomycin, mycophenolic acid, nogalamycin, olibomycin, peflomycin, portpyromycin, furomycin, quellamycin, rodorubicin, streptonigreen, streptozosin, tubercidin, uvenimex, genostatin, and rhodorubicin; Anmetatans such as methotrexate and 5-fluorouracil (5-FU); folic acid analogs such as denopterin, methotrexate, pteropterin, and trimetrexate; purine analogs such as fludarabine, 6-mercaptopurine, thiamiphrine, and thioguanine;Pyrimidine analogs such as ancitabine, azacitidine, 6-azauridine, carmofur, cytarabine, dideoxyuridine, doxyfluridine, enositabine, and fluoroxuridine; androgens such as callosterone, dromostanolone propionate, epithiostanol, mepitiostan, and testolactone; antiadrenal agents such as aminoglutethimide, mithotan, and trilostan; folic acid supplements such as proline acid; aceglatone; aldophosphamide glycosides; aminolevulinic acid; amsacrine; bestabucil; arsentren; edatlaxate; depopamine; demecolsin; diaziquone; l-formitin; elliptinium acetate; ethoglucidate; gallium nitrate; hydroxyurea; lentinan; ronidamine; mithoguazone; Mithoxantrone; Morpidamol; Nitracrine; Pentostatin; Fenamet; Pirarubicin; Podophyllinic acid; 2-ethylhydrazide; Procarbazine; Polysaccharide K; Razoxic acid; Sizopyran; Spirogermanium; Tenuazonic acid; Triaziquone; 2,2',2''-Trichlorotriethylamine; Urethane; Vindecin; Dacarbazine; Mannomustine; Mitobronitol; Mitoractol; Pipobroman; Acitosine; Arabinoside ("Ara-C"); Cyclophosphamide; Thiotepa; Taxane, e.g., Paclitaxel (TAXOL; TM , Bristol-Myers Squibb Oncology, Princeton, NJ) and docetaxel (TAXOTERE TM, Rhone-Poulenc Rorer, Antony, France); retinoic acid; esperamicin; capecitabine; and pharmaceutically acceptable salts, acids, or derivatives of any of the above. Also included as suitable chemotherapy cell modulators are anti-estrogens including, for example, tamoxifen (Nolvadex™), raloxifene, aromatase inhibitor 4(5)-imidazole, 4-hydroxytamoxifen, trioxyfen, keoxyfen, LY 117018, onapriston, and toremifene (Parestone); anti-hormonal agents acting to modulate or inhibit hormonal action against tumors, such as anti-androgens like flutamide, nilutamide, bicalutamide, leuprolide, and goserelin; chlorambucil; gemcitabine; 6-thioguanine; mercaptopurine; methotrexate; Platinum analogs such as cisplatin and carboplatin; vinblastine; platinum; etoposide (VP-16); ifosfamide; mitomycin C; mitoxantrone; vincristine; vinorelbine; navelbine; novelron; tenifoside; daunomycin; aminopterin; Xeloda®; ibandronate; camptothecin n-11 (CPT-11); topoisomerase inhibitor RFS 2000; and difluoromethylornithine (DFMO).Preferably, compounds as described herein or pharmaceutically acceptable salts or pharmaceutical compositions thereof may be commonly prescribed anticancer agents, such as Herceptin®, Avastin®, Gadziva®, Tecentriq®, Alecensa®, Perjeta®, Veneclaxta™, Erbitux®, Rituxan®, Taxol®, Arimidex®, Taxotere®, ABVD, Avicin, Avagovomab, Acridine Carboxamide, Adecatumumab, 17-N-allylamino-17-demethoxygeldanamycin, Alfaradine, Albosidip, 3-aminopyridine-2-carboxaldehyde Thiosemicarbazone, Amonapid, Anthracendione, Anti-CD22 Immunotoxin, Antineoplastic, Antitumor Herbal, Apatiquone, Artiprimod, Azathioprine, Belotecan, Bendamustine, BIBW 2992, Viricodar, Brostalysin, Bryostatin, Butionine Sulfoximine, CBV (Chemotherapy), Kaliculin, Cell Cycle Non-Specific Antineoplastic Agent, Dichloroacetic Acid, Discordermolide, Elamitrusin, Enositabine, Epotillon, Eribulin, Everolibus, Exatecan, Exisulind, Peruginol, Porodesin, Fosfestrol, ICE Chemotherapy Prescription, IT-101, Imexon, Imiquimod, Indolocarbazole, Irofulven, Raniquidar, Larotaxel, Lenalidomide, Lucantone, Lurtotecan, Maposfamide, Mitozolomide, Nafoxidin, Nedaplatin, Olaparib, Ortataxel, PAC-1, Papaw, Pixantrone, Proteasome Inhibitor, Rebecamicin, It may be used in combination with resiquimod, rubitecan, SN-38, salinosporamide A, sapacitabine, Stanford V, swainsonine, talaporfin, tariquidar, tegafur-uracil, temodar, tesetaxel, triflatine tetranitrate, tris(2-chloroethyl)amine, troxacitabine, uramustine, badimezan, vinflunine, ZD6126, or zosquidar. The precise method of administering the solid form or pharmaceutical composition and the additional therapeutic agent will be obvious to a person skilled in the art. In some exemplary embodiments, the solid form or its pharmaceutical composition and the additional therapeutic agent are co-administered. In other embodiments, the solid form or pharmaceutical composition and the additional therapeutic agent are administered separately. In some embodiments, the solid form or pharmaceutical composition and the additional therapeutic agent are administered together with or separately from a second agent. Such concomitant administration may include simultaneous administration of two agents in the same dosage form, simultaneous administration in separate dosage forms, and separate administration. That is, the solid form or pharmaceutical composition and any additional therapeutic agent described herein may be formulated together in the same dosage form and administered simultaneously. Alternatively, the solid form or pharmaceutical composition and any additional therapeutic agent described herein may be administered simultaneously, wherein the two agents exist as separate agents. In yet another alternative, the solid form or pharmaceutical composition may be administered immediately after any additional therapeutic agent described herein, or vice versa. In some embodiments of a separate administration protocol, the solid form or pharmaceutical composition and any additional therapeutic agent described herein are administered at intervals of minutes, hours, or days. Manufactured goods A manufactured article or “kit” comprising a substance useful for the treatment of cancer as described herein is also provided herein. In one embodiment, the kit comprises a container comprising a solid form or pharmaceutical composition as described herein. The kit may further comprise a label or product description on or combined with the container. Suitable containers include, for example, bottles, vials, syringes, blister packs, etc. The container may be formed from various materials such as glass or plastic. The container may contain a solid form or pharmaceutical composition as described herein that is effective for treating the pathological condition and may have a sterile access port (for example, the container may be an intravenous solution bag or vial having a stopper that can be punctured with a subcutaneous injection needle). At least one active agent in the container is the solid form or pharmaceutical composition as described herein. Alternatively or additionally, the manufactured article may further comprise a second container containing a pharmaceutical diluent such as bacteriostatic injectable (BWFI), phosphate-buffered saline, Ringer’s solution, or dextrose solution. This may additionally include other buffers, diluents, filters, needles, and syringes, as well as other materials desirable from a commercial and user perspective. In another embodiment, the kit is suitable for delivering solid oral forms of the solid form or pharmaceutical composition described herein, such as tablets or capsules. Such a kit may contain multiple unit doses. An example of such a kit is a "blister pack." Blister packs are known in the packaging industry and are widely used for packaging pharmaceutical unit formulations. Listed implementation examples Embodiment 1. Anhydrous crystalline form comprising a compound of chemical formula (I): (I). Embodiment 2. In Embodiment 1, the anhydrous crystalline form is substantially an anhydrous crystalline form of type J characterized by an XRPD pattern as shown in FIG. 1. Example 3. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type J characterized by a thermogravimetric analysis (TGA) thermal analysis showing a weight loss of about 2.6% up to 180°C. Embodiment 4. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is a form J characterized by a differential scanning calorimetry (DSC) thermal analysis chart including at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Example 5. In Example 4, the anhydrous crystalline form is an anhydrous crystalline form of type J characterized by a DSC thermal analysis diagram including endothermic peaks at about 110 ℃, about 138 ℃, and about 178 ℃. Embodiment 6. In Embodiment 1, the anhydrous crystalline form is an anhydrous crystalline form of type J characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 1; b. TGA thermal analysis showing a weight loss of approximately 2.6% up to 180 ℃; and c. DSC thermal analysis chart including at least one endothermic peak at approximately 110 ℃, approximately 138 ℃, or approximately 178 ℃. Example 7. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type J characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 1; b. TGA thermal analysis showing a weight loss of approximately 2.6% up to 180 ℃; and c. DSC thermal analysis chart including endothermic peaks at approximately 110 ℃, approximately 138 ℃, and approximately 178 ℃. Example 8. In Example 1, the anhydrous crystalline form is substantially an anhydrous crystalline form of type O characterized by an XRPD pattern as shown in FIG. 2. Example 9. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type O characterized by a TGA thermal analysis showing a weight loss of about 3.1% up to 180 ℃. Embodiment 10. The anhydrous crystalline form of Embodiment 1, wherein the anhydrous crystalline form is a form O characterized by a DSC thermal analysis diagram including at least one endothermic peak at about 70 °C or about 195 °C. Example 11. In Example 10, the anhydrous crystalline form is an anhydrous crystalline form of type O characterized by a DSC thermal analysis diagram including endothermic peaks at about 70 ℃ and about 195 ℃. Embodiment 12. In Embodiment 1, the anhydrous crystalline form is an anhydrous crystalline form of type O characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 2; b. TGA thermal analysis showing a weight loss of approximately 3.1% up to 180 ℃; and c. DSC thermal analysis chart including at least one endothermic peak at approximately 70 ℃ or approximately 195 ℃. Embodiment 13. In Embodiment 1, the anhydrous crystalline form is an anhydrous crystalline form of type O characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 2; b. TGA thermal analysis showing a weight loss of approximately 3.1% up to 180 ℃; and c. DSC thermal analysis diagram including endothermic peaks at approximately 70 ℃ and approximately 195 ℃. Embodiment 14. In Embodiment 1, the anhydrous crystalline form is substantially an anhydrous crystalline form of shape U characterized by an XRPD pattern as shown in FIG. 3. Example 15. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type U characterized by a TGA thermal analysis showing a weight loss of about 1.3% up to 190 ℃. Example 16. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type U characterized by a DSC thermal analysis diagram including an endothermic peak at approximately 205 ℃. Embodiment 17. In Embodiment 1, the anhydrous crystalline form is an anhydrous crystalline form of form U characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 3; b. TGA thermal analysis showing a weight loss of approximately 1.3% up to 190 ℃; and c. DSC thermal analysis diagram including an endothermic peak at approximately 205 ℃. Embodiment 18. In Embodiment 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a type AC characterized by an XRPD pattern as shown in FIG. 4. Example 19. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of type AC characterized by a TGA thermal analysis showing a weight loss of about 2.3% up to 160 ℃. Example 20. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form of the form AC characterized by a DSC thermal analysis diagram including an endothermic peak at approximately 163 ℃. Example 21. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AC characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 4; b. TGA thermal analysis showing a weight loss of approximately 2.3% up to 160 ℃; and c. DSC thermal analysis diagram including an endothermic peak at approximately 163 ℃. Example 22. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AG characterized by an XRPD pattern including characteristic peaks at 2θ of about 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2. Embodiment 23. In Embodiment 22, the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2, anhydrous crystalline type. Embodiment 24. In Embodiment 22, the XRPD pattern further comprises characteristic peaks at 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2, in an anhydrous crystalline form. Example 25. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AG characterized by an XRPD pattern including at least 15 peaks as presented in Table 39. Example 26. In Example 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a form AG characterized by an XRPD pattern as shown in FIG. 5A. Example 27. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form characterized by a TGA thermal analysis showing a weight loss of about 1.1% up to 180°C. Example 28. In Example 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a form AG characterized by a TGA thermal analysis diagram as shown in FIG. 5B. Example 29. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AG characterized by a DSC thermal analysis diagram including an endothermic peak at approximately 219 ℃. Example 30. In Example 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a form AG characterized by a DSC thermal analysis diagram as shown in FIG. 5B. Embodiment 31. In Embodiment 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a form AG characterized by a dynamic vapor adsorption (DVS) plot as shown in FIG. 5C. Embodiment 32. In Embodiment 1, the anhydrous crystalline form is substantially an anhydrous crystalline form that is a shape AG characterized by a scanning electron microscope (SEM) image as shown in FIG. 5D. Example 33. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AG characterized by two or more of the following: a. XRPD pattern including characteristic peaks at 2θ of approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2; b. TGA thermal analysis showing a weight loss of approximately 1.1% at 180 ℃; c. DSC thermal analysis including an endothermic peak at approximately 219 ℃; d. Dynamic vapor adsorption (DVS) plot substantially as presented in FIG. 5C; and e. Scanning electron microscope (SEM) image substantially as shown in FIG. 5D. Example 34. In Example 1, the anhydrous crystalline form is an anhydrous crystalline form that is a form AG characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 5A; b. Substantially a TGA thermal analysis diagram as presented in FIG. 5B; c. Substantially a DSC thermal analysis diagram as presented in FIG. 5B; d. A DVS plot substantially as presented in FIG. 5C; and e. SEM micrograph substantially as presented in FIG. 5D. Embodiment 35. A pharmaceutical composition comprising any one of Embodiments 1-34 anhydrous crystalline form and at least one pharmaceutically acceptable excipient. Embodiment 36. A method for treating cancer in a subject, comprising the step of administering to the subject a therapeutically effective amount of any one of the anhydrous crystalline forms of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 37. The method of Embodiment 36, wherein the cancer is characterized by a KRas mutation. Embodiment 38. In Embodiment 37, the KRas mutation is KRas G12D A method corresponding to a mutation. Embodiment 39. In any one of Embodiments 36-38, KRas before administration G12D A method further comprising the step of testing a sample of a subject for the presence or absence of a mutation. Embodiment 40. In Embodiment 39, the crystalline form is the patient sample KRas G12D A method administered to a patient after indicating the presence of a mutation. Example 41. A method in any one of Examples 36-40 in which the cancer is tissue-independent. Example 42. A method in which, in any one of Examples 36-40, the cancer is pancreatic cancer, lung cancer, or colorectal cancer. Example 43. In Example 42, the cancer is lung cancer. Embodiment 44. The method of Embodiment 43, wherein the lung cancer is lung adenocarcinoma, NSCLC, or SCLC. Example 45. In Example 42, the cancer is pancreatic cancer. Example 46. The method of Example 42, wherein the cancer is colorectal cancer. Embodiment 47. A method comprising, in any one of Embodiments 36-46, an additional step of administering at least one additional therapeutic agent. Embodiment 48. In Embodiment 47, at least one additional therapeutic agent is selected from epidermal growth factor receptor (EGFR) inhibitors, phosphatidylinositol kinase (PI3K) inhibitors, insulin-like growth factor receptor (IGF1R) inhibitors, Janus kinase (JAK) inhibitors, Met kinase inhibitors, SRC family kinase inhibitors, mitogen-activated protein kinase (MEK) inhibitors, extracellular signal-regulated kinase (ERK) inhibitors, topoisomerase inhibitors, taxanes, antimetabolites, or alkylating agents. Embodiment 49. A method for controlling the activity of a KRas mutant protein, comprising reacting the mutant protein with any one of the anhydrous crystalline forms of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 50. A method for inhibiting the proliferation of a cell population, comprising contacting a cell population with any one of the anhydrous crystalline forms of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 51. In Embodiment 50, the inhibition of proliferation is measured as a decrease in the cell viability of a cell population. Embodiment 52. A method for inhibiting tumor metastasis of a subject, comprising the step of administering to the subject a therapeutically effective amount of any one of the anhydrous crystalline forms of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35. Embodiment 53. Anhydrous crystalline form of a compound of formula (I) according to any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35 for use in cancer treatment. Embodiment 54. Use of the anhydrous crystalline form of the compound of formula (I) according to any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35 for cancer treatment. Embodiment 55. Use of the anhydrous crystalline form of the compound of formula (I) according to any one of Embodiments 1-34 or the pharmaceutical composition of Embodiment 35 in the manufacture of a drug for cancer treatment. Embodiment II-1. Solid form of the compound of chemical formula (I): (I), Here, the solid form is: Crystalline polymorphic form J; Crystalline polymorphic form N; Crystalline polymorphic form O; or Crystalline polymorphic form AG. Embodiment II-2. In Embodiment II-1, the solid form is a solid form that is a crystalline polymorphic form AG. Embodiment II-3. The solid form of Embodiment II-2, wherein the solid form is a solid form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Embodiment II-4. The solid form of Embodiment II-2 or II-3, wherein the solid form is a solid form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Embodiment II-5. In any one of Embodiments II-2 to II-4, the solid form is a solid form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Embodiment II-6. In any one of Embodiments II-2 to II-5, the solid form is a solid form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 2θ. Embodiment II-7. In Embodiment II-2 or II-3, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peak at approximately 13.1 ± 0.2 degrees 2θ and peak at approximately 19.3 ± 0.2 degrees 2θ; and At least one peak selected from the group consisting of 2θ, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2. Embodiment II-8. In any one of Embodiments II-2 to II-4 or II-7, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peak at approximately 13.1 ± 0.2 degrees 2θ and peak at approximately 19.3 ± 0.2 degrees 2θ; and At least two peaks selected from the group consisting of 2θ, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2. Embodiment II-9. In any one of Embodiments II-2 to II-5, II-7 or II-8, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peak at approximately 13.1 ± 0.2 degrees 2θ and peak at approximately 19.3 ± 0.2 degrees 2θ; and At least three peaks selected from the group consisting of 2θ, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2. Embodiment II-10. In any one of Embodiments II-2 to II-9, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peak at approximately 13.1 ± 0.2 degrees 2θ and peak at approximately 19.3 ± 0.2 degrees 2θ; and At least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2. Embodiment II-11. In Embodiment II-2 or II-3, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: At least two peaks selected from the group consisting of 2θ, 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2; and At least one peak selected from the group consisting of 2θ, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2. Embodiment II-12. In Embodiment II-2, the solid form is a solid form AG characterized by an XRPD pattern including characteristic peaks at 2θ of approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2. Embodiment II-13. The solid form of Embodiment II-12, wherein the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2. Embodiment II-14. The solid form of Embodiment II-12, wherein the XRPD pattern further comprises characteristic peaks at 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2. Embodiment II-15. In any one of Embodiments II-2 to II-8, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peaks at 2θ at approximately 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 degrees; and At least two, at least three, at least four, or at least five peaks selected from the group consisting of 2θ, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2. Embodiment II-16. In any one of Embodiments II-2 to II-9, the solid form is a solid form AG characterized by an XRPD pattern comprising the following: Peaks at approximately 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2 °2θ and 18.5 ± 0.2 °2θ; and One or more peaks at 2θ at approximately 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2. Embodiment II-17. In any one of Embodiments II-2 to II-16, the solid form is a solid form AG characterized by a TGA thermal analysis showing a weight loss of about 1.1% up to 180°C. Embodiment II-18. In any one of Embodiments II-2 to II-17, the solid form is a solid form AG characterized by a DSC thermal analysis diagram including an endothermic peak at approximately 219 ℃. Embodiment II-19. In any one of Embodiments II-2 to II-18, the solid form is a solid form AG characterized by two or more of the following: a. XRPD pattern including characteristic peaks at 2θ of approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2; b. TGA thermal analysis showing a weight loss of approximately 1.1% at 180 ℃; and c. DSC thermal analysis including an endothermic peak at approximately 219 ℃; Embodiment II-20. In any one of Embodiments II-2 to II-19, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Embodiment II-21. In Embodiment II-1, the solid form is a solid form that is a crystalline polymorphic form J. Embodiment II-22. The solid form of Embodiment II-21, wherein the solid form is a solid form J characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ± 0.2, 15.6 ± 0.2, 9.4 ± 0.2, 18.2 ± 0.2, 8.42 ± 0.2, 13.7 ± 0.2, 8.8 ± 0.2 and 19.7 ± 0.2. Embodiment II-23. The solid form of Embodiment II-21, wherein the solid form is a solid form J characterized by an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2. Embodiment II-24. In any one of Embodiments II-21 to II-23, the solid form is a solid form J characterized by an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2. Embodiment II-25. In any one of Embodiments II-21 to II-24, the solid form is a solid form J characterized by an XRPD diffraction pattern comprising the following: XRPD peaks at 6.8±0.2 °2θ and 8.8±0.2 °2θ; and At least two XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2. Embodiment II-26. In any one of Embodiments II-21 to II-25, the solid form is a solid form J characterized by an XRPD diffraction pattern comprising the following: XRPD peaks at 6.8±0.2 °2θ and 8.8±0.2 °2θ; and At least three XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2. Embodiment II-27. In any one of Embodiments II-21 to II-26, the solid form is a solid form J characterized by an XRPD diffraction pattern comprising the following: XRPD peaks at 6.8±0.2 °2θ and 8.8±0.2 °2θ; and At least four XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, and 19.7 ±0.2. Embodiment II-28. In any one of Embodiments II-21 to II-27, the solid form is a solid form J characterized by an XRPD diffraction pattern including XRPD peaks at 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2, and 19.7 ±0.2. Embodiment II-29. In any one of Embodiments II-21 to II-28, the solid form is a solid form J characterized by a thermogravimetric analysis (TGA) thermal analysis showing a weight loss of about 2.6% up to 180°C. Embodiment II-30. In any one of Embodiments II-21 to II-29, the solid form is a solid form J characterized by a differential scanning calorimetry (DSC) thermal analysis chart including at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Embodiment II-31. In any one of Embodiments II-21 to II-30, the solid form is a solid form J characterized by a differential DSC thermal analysis diagram including endothermic peaks at about 110 ℃, about 138 ℃, and about 178 ℃. Embodiment II-32. In any one of Embodiments II-21 to II-31, the solid form is a solid form J characterized by two or more of the following: a. A substantially XRPD pattern as shown in FIG. 1; b. TGA thermal analysis showing a weight loss of approximately 2.6% up to 180 ℃; and c. DSC thermal analysis chart including endothermic peaks at approximately 110 ℃, approximately 138 ℃, and approximately 178 ℃. Embodiment II-33. In any one of Embodiments II-21 to II-32, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Embodiment II-34. In Embodiment II-1, the solid form is a solid form that is a crystalline polymorphic form O. Embodiment II-35. The solid form of Embodiment II-34, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of 2θ of approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.2. Embodiment II-36. In Embodiment II-34 or II-35, the solid form is characterized by an XRPD diffraction pattern comprising: XRPD peaks at approximately 15.1 ±0.2, 19.7 ±0.2, and 9.3 ±0.2 degrees 2θ; and At least three additional peaks selected from the group consisting of 2θ of approximately 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.2. Embodiment II-37. In any one of Embodiments II-34 to II-36, the solid form is characterized by an XRPD diffraction pattern including XRPD peaks at 2θ of about 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2. Embodiment II-38. In any one of Embodiments II-34 to II-37, the solid form is characterized by a TGA thermal analysis showing a weight loss of about 3.1% up to 180°C. Embodiment II-39. In any one of Embodiments II-34 to II-38, the solid form is a solid form O characterized by a DSC thermal analysis diagram including at least one endothermic peak at about 70 °C or about 195 °C. Embodiment II-40. In any one of Embodiments II-34 to II-39, the solid form is a solid form O characterized by a DSC thermal analysis diagram including endothermic peaks at about 70 ℃ and about 195 ℃. Embodiment II-41. In any one of Embodiments II-34 to II-40, the solid form is a solid form O characterized by two or more of the following: a. XRPD peaks at 2θ at approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2, and 15.9 ±0.2; b. TGA thermal analysis showing a weight loss of approximately 3.1% up to 180 ℃; and c. DSC thermal analysis diagram including endothermic peaks at approximately 70 ℃ and approximately 195 ℃. Embodiment II-42. In any one of Embodiments II-34 to II-41, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Embodiment II-43. In Embodiment II-1, the solid form is a solid form that is a crystalline polymorphic form N. Embodiment II-44. The solid form of Embodiment II-43, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least two peaks selected from the group consisting of 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2 and 6.6 ± 0.2. Embodiment II-45. In Embodiment II-43 or II-44, the solid form is characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of about 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2. Embodiment II-46. In any one of Embodiments II-43 to II-45, the solid form is characterized by an XRPD pattern comprising the following: At least one peak selected from the group consisting of 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, and 15.5 ± 0.2; and At least one, at least two, at least three, or at least four peaks selected from the group consisting of 2θ of approximately 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2. Embodiment II-47. In any one of Embodiments II-43 to II-46, the solid form is characterized by XRPD pattern peaks at 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.2. Embodiment II-48. In any one of Embodiments II-43 to II-47, the solid form is characterized by a TGA thermal analysis showing a weight loss of about 3.9% up to 180°C. Embodiment II-49. In any one of Embodiments II-43 to II-48, the solid form is characterized by a DSC thermal analysis diagram including at least one endothermic peak at about 60 ℃, about 131 ℃, or about 172 ℃. Embodiment II-50. In any one of Embodiments II-43 to II-49, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Embodiment II-51. A pharmaceutical composition comprising any one of Embodiments II-1 to II-50 in a solid form and at least one pharmaceutically acceptable excipient. Embodiment II-52. A pharmaceutical composition in which the solid form of Embodiment II-51 is any one of the solid forms of Embodiments II-2 to II-20. Embodiment II-53. A pharmaceutical composition in which the solid form of Embodiment II-51 is any one of the solid forms of Embodiments II-21 to II-33. Embodiment II-54. A pharmaceutical composition in which the solid form of Embodiment II-51 is any one of the solid forms of Embodiments II-34 to II-42. Embodiment II-55. A pharmaceutical composition in which the solid form of Embodiment II-51 is any one of the solid forms of Embodiments II-43 to II-50. Embodiment II-56. A method for treating cancer in a subject, comprising the step of administering to the subject a therapeutically effective amount of any one of the solid forms of Embodiments II-1 to II-50 or any one of the pharmaceutical compositions of Embodiments II-51 to II-55. Embodiment II-57. The method of Embodiment II-56, wherein the cancer is characterized by a KRas mutation. Embodiment II-58. In Embodiment II-57, the KRas mutation is KRas G12D A method corresponding to a mutation. Embodiment II-59. A method in any one of Embodiments II-56 to II-59 in which the cancer is tissue-independent. Embodiment II-60. A method in any one of Embodiments II-56 to II-59, wherein the cancer is pancreatic cancer, lung cancer, or colorectal cancer. Embodiment II-61. A method for regulating the activity of a KRas mutant protein, comprising reacting the mutant protein with any one of the solid forms of Embodiments II-1 to II-50 or with any one of the pharmaceutical compositions of Embodiments II-51 to II-56. Embodiment II-62. A method for inhibiting the proliferation of a cell population, comprising contacting a cell population with a solid form according to any one of Embodiments II-1 to II-50 or with a pharmaceutical composition according to any one of Embodiments II-51 to II-55. Embodiment II-63. In Embodiment II-62, the inhibition of proliferation is measured as a decrease in the cell viability of a cell population. Embodiment II-64. A method for inhibiting tumor metastasis of a subject, comprising the step of administering to a subject a therapeutically effective amount of any one of the solid forms of Embodiments II-1 to II-50 or any one of the pharmaceutical compositions of Embodiments II-51 to II-55. Embodiment II-65. A solid form of a compound of formula (I) according to any one of Embodiments II-1 to II-50 or a pharmaceutical composition according to any one of Embodiments II-51 to II-55 for use in cancer treatment. Embodiment II-66. Use of a solid form of a compound of formula (I) according to any one of Embodiments II-1 to II-50 or a pharmaceutical composition of any one of Embodiments II-51 to II-55 for the treatment of cancer. Embodiment II-67. Use of a solid form of a compound of formula (I) according to any one of Embodiments II-1 to II-50 or a pharmaceutical composition of any one of Embodiments II-51 to II-55 in the manufacture of a drug for cancer treatment. Synthesis process In this specification, chemical formulas Compound of (I) and intermediates useful for the synthesis thereof (e.g., chemical formula (A), (B), (H) and An improved process for preparing (Ha)'s compound is provided. In general, the described process provides an efficient synthesis route for preparing such a compound. The process of the present disclosure offers several advantages. For example, in some embodiments, the process of the disclosure uses solvents that are relatively non-toxic, relatively inexpensive, and relatively moderate in terms of industrial hygiene, process safety, and environmental burden. In some embodiments, sustainable alcohol solvents such as methanol and ethanol are used. Accordingly, these embodiments provide improved safety and significant cost savings. In some embodiments, the process of the present disclosure reduces the use of expensive reagents or materials, e.g., precious metal catalysts, by a significant amount in certain process steps, thereby providing significant cost savings and waste reduction. In some embodiments, the process of the present disclosure uses a relatively non-toxic reagent to reduce safety risks and costs. Additionally, in some embodiments, the process of the present disclosure allows for significantly higher reactant concentrations at certain steps, resulting in substantial improvements in process equipment efficiency and process throughput, as well as reduced associated costs. In some embodiments, the process of the present disclosure eliminates the need for multiple chromatographic purification steps compared to known processes. Chromatographic purification steps require specialized and expensive process equipment, increase the number of chemical workers required, reduce throughput, and increase costs. The process of the present disclosure can also eliminate the need for specific extraction steps using organic solvents and eliminate the need for multiple solvent stripping steps. These improvements reduce energy consumption and eliminate solvent handling and distillation steps, thereby significantly reducing costs by consequently eliminating the associated necessary process equipment and its operation, the need for material handling, and the risks of industrial hygiene and environmental burden. The process of the present disclosure also provides higher yield and purity compared to the prior art process. Therefore, the discovery of the disclosed process as described in detail in this specification represents a substantial advancement in the art. Chemical formula (I) In one embodiment, the present disclosure provides a process for preparing a compound of formula (I). In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C); b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing the compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E); d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G); e) A step of preparing a compound of formula (Ja) by reacting a compound of formula (G) with a compound of formula (Ha): (Ha) (Ja) (Here, Boc is tert -butyloxycarbonyl); and f) A step of preparing a compound of formula (I) by reacting a compound of formula (Ja) with an acidic reagent. In some embodiments, the conditions of steps (a) - (f) are exemplified in this specification. In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C); b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing the compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E); d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G); e) A step of preparing a compound of formula (J) by reacting a compound of formula (G) with a compound of formula (H): (H) (J); and f) A step of preparing a compound of formula (I) by reacting a compound of formula (J) with an acidic reagent. In some embodiments, the conditions of steps (a) - (f) are exemplified in this specification. Chemical formula (I) - Step a) In some embodiments, step a) involves the use of a basic reagent. In some embodiments, the basic reagent comprises NaOt-Bu, NaH, or NaOt-Am. In some embodiments, the basic reagent comprises NaOt-Bu. In some embodiments, the basic reagent comprises NaH. In some embodiments, the basic reagent comprises NaOt-Am. In some embodiments, the basic reagent is NaOt-Bu, NaH, or NaOt-Am. In some embodiments, the basic reagent is NaOt-Bu. In some embodiments, the basic reagent is NaH. In some embodiments, the basic reagent is NaOt-Am. In some embodiments, step a) involves the use of a solvent. In some embodiments, the solvent comprises NMP, THF, toluene, 2-MeTHF, MeCN, DCM, or a mixture thereof. In some embodiments, the solvent comprises a mixture of NMP and THF. In some embodiments, the solvent comprises NMP. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent is NMP, THF, toluene, 2-MeTHF, MeCN, DCM, or a mixture thereof. In some embodiments, the solvent is a mixture of NMP and THF. In some embodiments, the solvent is NMP. In some embodiments, the solvent is THF. In some embodiments, the solvent is toluene. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, step a) involves crystallizing a compound of formula (C). In some embodiments, the compound of formula (C) is crystallized in an acidic solution. In some embodiments, the acidic solution is AcOH in water. In some embodiments, the acidic solution is 2 wt% AcOH in water. In some embodiments, step a) includes the use of a basic reagent and a solvent; and the crystallization of the compound of formula (C). In some embodiments, step a) includes the use of a mixture of NaOt-Bu and NMP and THF; and the compound of formula (C) is crystallized in an acidic solution. In some embodiments, step a) includes the use of a mixture of NaOt-Bu and NMP and THF; and the compound of formula (C) is crystallized in 2 wt% AcOH in water. In some embodiments, step a) includes the following: . Chemical formula (I) - Step b) In some embodiments, at step b), one or more reagents comprise a mixture of DIPEA and POCl3 or BOPCl. In some embodiments, at step b), one or more reagents comprise a mixture of POCl3 and DIPEA. In some embodiments, at step b), one or more reagents are a mixture of BOPCl and DIPEA. A person skilled in the art will understand that in step b), the role of POCl3 or BOPCl is a dehydrating agent that makes the 4-hydroxyl group of formula (C) a much better leaving group for amine nucleophiles, and the role of DIPEA is a general base that removes byproduct HCl. In some embodiments, step b) involves the use of a solvent. In some embodiments, the solvent comprises MeCN, DCM, or a mixture thereof. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent is MeCN, DCM, or a mixture thereof. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, step b) involves crystallizing a compound of formula (D). In some embodiments, the compound of formula (D) is crystallized in a mixture of MeCN and water. In some embodiments, in step b), one or more reagents are POCl3 and DIPEA; step b) involves the use of a solvent and the crystallization of a compound of formula (D). In some embodiments, in step b), one or more reagents are POCl3 and DIPEA; step b) involves the use of MeCN; and a compound of formula (D) is crystallized in a mixture of MeCN and water. In some implementations, step b) includes the following: . Chemical formula (I) - step c) In some embodiments, in step c), the oxidizing agent is H2O2 / Na2WO4·H2O, m It includes -CPBA or Oxone / RuCl3. In some embodiments, at step c), the oxidizing agent includes H2O2 / Na2WO4·H2O. In some embodiments, at step c), the oxidizing agent m - Includes CPBA. In some embodiments, at step c), the oxidizing agent includes oxone / RuCl3. In some embodiments, at step c), the oxidizing agent includes H2O2 / Na2WO4·H2O, m -CPBA or Oxone / RuCl3. In some embodiments, in step c), the oxidizing agent is H2O2 / Na2WO4·H2O. In some embodiments, in step c), the oxidizing agent is m-CPBA. In some embodiments, in step c), the oxidizing agent is Oxone / RuCl3. In some embodiments, step c) involves the use of an additive. In some embodiments, the additive comprises PhP(O)(OH)2, KOAc, AcOH, KH2PO4, H3PO4, or DIPEA. In some embodiments, the additive comprises PhP(O)(OH)2. In some embodiments, the additive comprises KOAc. In some embodiments, the additive comprises AcOH. In some embodiments, the additive is KH2PO4. In some embodiments, the additive comprises H3PO4. In some embodiments, the additive comprises DIPEA. In some embodiments, the additive is PhP(O)(OH)2, KOAc, AcOH, KH2PO4, H3PO4, or DIPEA. In some embodiments, the additive is PhP(O)(OH)2. In some embodiments, the additive is KOAc. In some embodiments, the additive is AcOH. In some embodiments, the additive is KH2PO4. In some embodiments, the additive is H3PO4. In some embodiments, the additive is DIPEA. In some embodiments, step c) involves the use of a solvent comprising a mixture of an organic solvent and water. In some embodiments, the solvent is water and toluene, n It comprises a mixture of one or more of -PrOH, THF, MeCN, DCM, and EtOAc. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises a mixture of toluene and water. In some embodiments, the solvent n It includes -PrOH. In some embodiments, the solvent includes THF. In some embodiments, the solvent includes MeCN. In some embodiments, the solvent includes DCM. In some embodiments, the solvent includes EtOAc. In some embodiments, the solvent is toluene, nIt is -PrOH, THF, MeCN, DCM, EtOAc, or a mixture thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is a mixture of toluene and water. In some embodiments, the solvent is n It is -PrOH. In some embodiments, the solvent is THF. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DCM. In some embodiments, the solvent is EtOAc. In some embodiments, step c) is performed at about 15 to about 60 ℃. In some embodiments, step c) is performed at about 15 to about 50 ℃. In some embodiments, step c) is performed at about 15 to about 45 ℃. In some embodiments, step c) is performed at about 45 ℃. In some embodiments, step c) is performed at about 50 ℃. In some embodiments, step c) is performed at about 60 ℃. In some embodiments, step c) comprises telescoping the compound of formula (E) to step d). In some embodiments, step c) comprises telescoping the compound of formula (E) as a toluene solution to step d). In some embodiments, in step c), the oxidizing agent is H2O2 / Na2WO4·H2O; step c) includes the use of a solvent and an additive; step c) is performed at about 15 to about 45 °C; and step c) includes telescoping the compound of formula (E) to step d). In some embodiments, in step c), the oxidizing agent is H2O2 / Na2WO4·H2O; step c) includes the use of PhP(O)(OH)2 and a mixture of toluene and water; step c) is performed at about 15 to about 45 °C; and step c) includes telescoping the compound of formula (E) as a solution of toluene to step d). In some implementations, step c) includes the following: . Chemical formula (I) - Step d) In some embodiments, step d) involves the use of a basic reagent. In some embodiments, the basic reagent is NaO t -Am, NaO t It contains -Bu or NaH. In some embodiments, the basic reagent is NaO t It contains -Am. In some embodiments, the basic reagent is NaO t It contains -Bu. In some embodiments, the basic reagent contains NaH. In some embodiments, the basic reagent contains NaO t -Am, NaO t -Bu or NaH. In some embodiments, the basic reagent is NaO t -Am. In some embodiments, the basic reagent is NaO t It is -Bu. In some embodiments, the basic reagent is NaH. It will be understood that salts of other alkali metals, such as potassium, will have an equivalent effect. In some embodiments, step d) involves the use of a solvent. In some embodiments, the solvent comprises toluene, THF, 2-MeTHF, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises a mixture of toluene and THF. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises a mixture of toluene and 2-MeTHF. In some embodiments, the solvent is toluene, THF, 2-MeTHF, or a combination thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is THF. In some embodiments, the solvent is a mixture of toluene and THF. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is a mixture of toluene and 2-MeTHF. In some embodiments, step d) is performed at about -10 to about 25 ℃. In some embodiments, step d) is performed at about 0 to about 25 ℃. In some embodiments, step d) is performed at about -10 to about 5 ℃. In some embodiments, step d) involves crystallizing a compound of formula (G). In some embodiments, the compound of formula (G) is crystallized in a mixture of water and iPrOH. In some embodiments, step d) involves the use of a basic reagent and a solvent; step d) is performed at about -10 to about 25 °C; and step d) involves the crystallization of a compound of formula (G). In some embodiments, step d) involves NaO t -Am and the use of a mixture of toluene and 2-MeTHF; step d) is carried out at about -10 °C to about 5 °C; and the compound of formula (G) is crystallized in a mixture of water and iPrOH. In some embodiments, step d) includes the following: . In some embodiments, steps c) and d) take place in the same reaction vessel. Chemical formula (I) - Step e) In some embodiments, step e) involves the use of a catalyst. In some embodiments, the catalyst is Pd(Ad2P( n -Bu))(Crotyl)Cl, Pd(Ad2P( n -Bu))G3, Amphos Pd G3, PCy3Pd G3, Pt-Bu3Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(Crotyl)Amphos, PdCl(Crotyl)PCy3 or PEPPSI TM It includes -iPr. In some embodiments, the catalyst is Pd(Ad2P( n It contains -Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P( nIncludes -Bu))G3 (catalyst Pd(Ad2P( n -Bu))G3 is sometimes referred to as cataCXium A Pd G3). In some embodiments, the catalyst comprises Amphos Pd G3. In some embodiments, the catalyst comprises PCy3Pd G3. In some embodiments, the catalyst comprises Pt-Bu3Pd G3. In some embodiments, the catalyst comprises SPhos Pd G3. In some embodiments, the catalyst comprises RuPhos Pd G3. In some embodiments, the catalyst comprises XPhos Pd G3. In some embodiments, the catalyst comprises CPhos Pd G3. In some embodiments, the catalyst comprises DavePhos Pd G3. In some embodiments, the catalyst comprises PdCl(crotyl)Amphos. In some embodiments, the catalyst comprises PdCl(crotyl)PCy3. In some embodiments, the catalyst comprises PEPPSI TM It includes -iPr. In some embodiments, the catalyst is Pd(Ad2P( n -Bu))(Crotyl)Cl, Pd(Ad2P( n -Bu))G3, Amphos Pd G3, PCy3Pd G3, Pt-Bu3Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(Crotyl)Amphos, PdCl(Crotyl)PCy3 or PEPPSI TM -iPr. In some embodiments, the catalyst is Pd(Ad2P( n -Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P( n-Bu))G3. In some embodiments, the catalyst is Amphos Pd G3. In some embodiments, the catalyst is PCy3Pd G3. In some embodiments, the catalyst is Pt-Bu3Pd G3. In some embodiments, the catalyst is SPhos Pd G3. In some embodiments, the catalyst is RuPhos Pd G3. In some embodiments, the catalyst is XPhos Pd G3. In some embodiments, the catalyst is CPhos Pd G3. In some embodiments, the catalyst is DavePhos Pd G3. In some embodiments, the catalyst is PdCl(crotyl)Amphos. In some embodiments, the catalyst is PdCl(crotyl)PCy3. In some embodiments, the catalyst is PEPPSI TM -iPr. In some embodiments, the amount of catalyst used is 0.01-0.23 equivalents. In some embodiments, the amount of catalyst used is 0.01 equivalents. In some embodiments, the catalyst used is Pd(Ad2P( n -Bu))(crotyl)Cl is In some embodiments, step e) involves the use of a basic reagent. In some embodiments, the basic reagent comprises K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent comprises K3PO4·H2O. In some embodiments, the basic reagent comprises Cs2CO3. In some embodiments, the basic reagent comprises CsF. In some embodiments, the basic reagent comprises KHCO3. In some embodiments, the basic reagent is K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent is K3PO4·H2O. In some embodiments, the basic reagent is Cs2CO3. In some embodiments, the basic reagent is CsF. In some embodiments, the basic reagent is KHCO3. In some embodiments, step e) involves the use of a solvent. In some embodiments, the solvent is THF, tIt includes -AmOH, water, or a mixture thereof. In some embodiments, the solvent includes a mixture of THF and water. In some embodiments, the solvent includes THF. In some embodiments, the solvent is t It contains -AmOH. In some embodiments, the solvent contains water. In some embodiments, the solvent is THF, t -AmOH, water, or a mixture thereof. In some embodiments, the solvent is a mixture of THF and water. In some embodiments, the solvent is THF. In some embodiments, the solvent is t It is -AmOH. In some embodiments, the solvent is water. In some embodiments, a palladium capture agent is used, preferably in a solvent such as acetone, SiliaMetS TM Thiol is used. In some embodiments, step e) involves crystallizing a compound of formula (J). In some embodiments, the compound of formula (J) is crystallized in a mixture of water and acetone. In some embodiments, step e) includes the use of a catalyst, a basic reagent, a solvent, and the crystallization of a compound of formula (J). In some embodiments, step e) is Pd(Ad2P( n -Bu))(crotyl)Cl, K3PO4·H2O, THF and water are used, and the compound of formula (J) is crystallized in a mixture of water and acetone. In some embodiments, step e) is Pd(Ad2P( n -Bu))(Crotyl)Cl, 0.01 equivalents of K3PO4·H2O, THF, and a mixture of water are used, and the compound of formula (J) is crystallized in a mixture of water and acetone. In some implementations, step e) includes the following: . In some embodiments, step e) involves the use of a catalyst. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl, Pd(Ad2P( n-Bu))(Crotyl)Cl, Pd(Ad2P( n -Bu))G3, Amphos Pd G3, PCy3Pd G3, Pt-Bu3Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(Crotyl)Amphos, PdCl(Crotyl)PCy3 or PEPPSI TM It includes -iPr. In some embodiments, the catalyst includes Pd(SPhos)(crotyl)Cl. In some embodiments, the catalyst includes Pd(Ad2P( n It contains -Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P( n Includes -Bu))G3 (catalyst Pd(Ad2P( n -Bu))G3 is sometimes referred to as cataCXium A Pd G3). In some embodiments, the catalyst comprises Amphos Pd G3. In some embodiments, the catalyst comprises PCy3Pd G3. In some embodiments, the catalyst comprises Pt-Bu3Pd G3. In some embodiments, the catalyst comprises SPhos Pd G3. In some embodiments, the catalyst comprises RuPhos Pd G3. In some embodiments, the catalyst comprises XPhos Pd G3. In some embodiments, the catalyst comprises CPhos Pd G3. In some embodiments, the catalyst comprises DavePhos Pd G3. In some embodiments, the catalyst comprises PdCl(crotyl)Amphos. In some embodiments, the catalyst comprises PdCl(crotyl)PCy3. In some embodiments, the catalyst comprises PEPPSI TM It includes -iPr. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl, Pd(Ad2P( n -Bu))(Crotyl)Cl, Pd(Ad2P( n-Bu))G3, Amphos Pd G3, PCy3Pd G3, Pt-Bu3Pd G3, SPhos Pd G3, RuPhos Pd G3, XPhos Pd G3, CPhos Pd G3, DavePhos Pd G3, PdCl(Crotyl)Amphos, PdCl(Crotyl)PCy3 or PEPPSI TM -iPr. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P( n -Bu))(crotyl)Cl. In some embodiments, the catalyst is Pd(Ad2P( n -Bu))G3. In some embodiments, the catalyst is Amphos Pd G3. In some embodiments, the catalyst is PCy3Pd G3. In some embodiments, the catalyst is Pt-Bu3Pd G3. In some embodiments, the catalyst is SPhos Pd G3. In some embodiments, the catalyst is RuPhos Pd G3. In some embodiments, the catalyst is XPhos Pd G3. In some embodiments, the catalyst is CPhos Pd G3. In some embodiments, the catalyst is DavePhos Pd G3. In some embodiments, the catalyst is PdCl(crotyl)Amphos. In some embodiments, the catalyst is PdCl(crotyl)PCy3. In some embodiments, the catalyst is PEPPSI TM -iPr. In some embodiments, the amount of catalyst used is 0.001-0.200 equivalents. In some embodiments, the amount of catalyst used is 0.006 equivalents. In some embodiments, the catalyst is Pd(SPhos)(crotyl)Cl and 0.006 equivalents are used. In some embodiments, the amount of catalyst used is about 0.001-0.200 equivalents. In some embodiments, the amount of catalyst used is about 0.006 equivalents. In some embodiments, the catalyst used, Pd(SPhos)(crotyl)Cl, is about 0.006 equivalents. In some embodiments, step e) includes the use of SPhos. In some embodiments, SPhos is used in an amount of 0.001 to 0.010 equivalents. In some embodiments, SPhos is used in an amount of 0.002 to 0.005 equivalents. In some embodiments, SPhos is used in an amount of 0.003 equivalents. In some embodiments, SPhos is used in an amount of about 0.001 to about 0.010 equivalents. In some embodiments, SPhos is used in an amount of about 0.002 to 0.005 equivalents. In some embodiments, SPhos is used in an amount of about 0.003 equivalents. In some embodiments, step e) involves the use of a basic reagent. In some embodiments, the basic reagent comprises K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent comprises K3PO4·H2O. In some embodiments, the basic reagent comprises Cs2CO3. In some embodiments, the basic reagent comprises CsF. In some embodiments, the basic reagent comprises KHCO3. In some embodiments, the basic reagent is K3PO4·H2O, Cs2CO3, CsF, or KHCO3. In some embodiments, the basic reagent is K3PO4·H2O. In some embodiments, the basic reagent is Cs2CO3. In some embodiments, the basic reagent is CsF. In some embodiments, the basic reagent is KHCO3. In some embodiments, step e) involves the use of a solvent. In some embodiments, the solvent is THF, t It includes -AmOH, water, or a mixture thereof. In some embodiments, the solvent includes a mixture of THF and water. In some embodiments, the solvent includes THF. In some embodiments, the solvent is t It contains -AmOH. In some embodiments, the solvent contains water. In some embodiments, the solvent is THF, t-AmOH, water, or a mixture thereof. In some embodiments, the solvent is a mixture of THF and water. In some embodiments, the solvent is THF. In some embodiments, the solvent is t It is -AmOH. In some embodiments, the solvent is water. In some embodiments, step e) includes crystallization of a compound of formula (Ja). In some embodiments, the compound of formula (Ja) is n - It crystallizes in heptane. In some embodiments, step e) includes the use of a catalyst, a basic reagent, a solvent, and the crystallization of a compound of formula (Ja). In some embodiments, step e) includes the use of a mixture of Pd(SPhos)(crotyl)Cl, SPhos, K3PO4·H2O, THF, and water, and the compound of formula (Ja) is crystallized in a mixture of water and acetone. In some embodiments, step e) includes the use of 0.006 equivalents of Pd(SPhos)(crotyl)Cl, 0.003 equivalents of SPhos, K3PO4·H2O, THF, and water, and the compound of formula (Ja) n - It is crystallized in heptane. In some embodiments, step e) involves the use of a mixture of about 0.006 equivalents of Pd(SPhos)(crotyl)Cl, about 0.003 equivalents of SPhos, K3PO4·H2O, THF, and water, and the compound of formula (Ja) n - It crystallizes in heptane. In some implementations, step e) includes the following: Chemical formula (I) - step f) In some embodiments, at step f), the acidic reagent is MsOH or TFA. In some embodiments, at step f), the acidic reagent includes MsOH. In some embodiments, at step f), the acidic reagent includes TFA. In some embodiments, at step f), the acidic reagent is MsOH. In some embodiments, at step f), the acidic reagent is TFA. In some embodiments, step f) involves the use of a solvent. In some embodiments, the solvent comprises toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises EtOAc. In some embodiments, the solvent comprises AcOH. In some embodiments, the solvent is toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is EtOAc. In some embodiments, the solvent is AcOH. In some embodiments, step f) is performed at about 25 ℃ or about 50 ℃. In some embodiments, step f) is performed at about 25 ℃. In some embodiments, step f) involves crystallizing the compound of formula (I). In some embodiments, the compound of formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, crystallization is induced using a seed crystal of the form AG of the compound of formula (I), said seed was formed under the same heptane / EtOH crystallization conditions. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of a solvent; step f) is performed at about 25 °C or about 50 °C; and step f) involves the crystallization of the compound of formula (I). In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; step f) is performed at about 25 °C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; step f) is performed at about 25 °C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane using a seed crystal of form AG. In some implementations, step f) includes the following: . In some embodiments, at step f), the acidic reagent is MsOH or TFA. In some embodiments, at step f), the acidic reagent includes MsOH. In some embodiments, at step f), the acidic reagent includes TFA. In some embodiments, at step f), the acidic reagent is MsOH. In some embodiments, at step f), the acidic reagent is TFA. In some embodiments, step f) involves the use of a solvent. In some embodiments, the solvent comprises toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent comprises EtOAc. In some embodiments, the solvent comprises AcOH. In some embodiments, the solvent is toluene, EtOAc, AcOH, or a mixture thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is EtOAc. In some embodiments, the solvent is AcOH. In some embodiments, step f) is performed at about 10 ℃, about 15 ℃, about 25 ℃, or about 50 ℃. In some embodiments, step f) is performed at about 10 ℃. In some embodiments, step f) is performed at about 15 ℃. In some embodiments, step f) is performed at about 25 ℃. In some embodiments, step f) is performed at less than 25 ℃ (i.e., < 25 ℃, but ≥ 5 ℃). In some embodiments, step f) is performed at less than 50 ℃. In some embodiments, step f) involves crystallizing the compound of formula (I). In some embodiments, the compound of formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, crystallization is induced using a seed crystal of the form AG of the compound of formula (I), said seed was formed under the same heptane / EtOH crystallization conditions. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of a solvent; step f) is performed at about 25 °C or about 50 °C; and step f) involves the crystallization of the compound of formula (I). In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; step f) is performed at about 25 °C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; step f) is performed at about 25 °C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane using a seed crystal of form AG. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; Step f) is performed at less than 25°C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane. In some embodiments, in step f), the acidic reagent is MsOH; step f) involves the use of toluene; step f) is performed at less than 25°C; and the compound of formula (I) is crystallized in a mixture of EtOH and heptane using a seed crystal of form AG. In some implementations, step f) includes the following: In some embodiments, the compound of formula (A) is prepared by the process described herein. In some embodiments, the compound of formula (B) is prepared by the process described herein. In some embodiments, the compound of formula (F) is prepared according to the procedure for intermediate 1A in WO2022 / 216762. In some embodiments, the compound of formula (F) is prepared according to the procedure for intermediate 5 in PCT / US2023 / 022914. In some embodiments, the compound of formula (H) is prepared by the process described herein. In some embodiments, the compound of formula (Ha) is prepared by the process described herein. In some embodiments, in the process of preparing the compound of formula (I), the compound of formula (A) is prepared by the process described herein; the compound of formula (B) is prepared by the process described herein; and the compound of formula (F) is prepared by the process described herein; The compound of formula (H) is prepared by the process described herein. In some embodiments, in the process of preparing the compound of formula (I), the compound of formula (A) is prepared by the process described herein; the compound of formula (B) is prepared by the process described herein; the compound of formula (F) is prepared by the process described herein; and the compound of formula (Ha) is prepared by the process described herein. In some embodiments, the process for preparing a compound of formula (I) comprises the following: . In some embodiments, the process for preparing a compound of formula (I) comprises the following: . In some embodiments, the process for preparing a compound of formula (I) comprises the following: Chemical formula (A) In one aspect, the present disclosure provides a process for preparing a compound of formula (A). In some embodiments, the process comprises the following steps: a) A step of preparing a compound of formula (Ax) by reacting a compound of formula (Aw) with a basic reagent and a brominating reagent: (Aw) (Ax); b) A step of preparing a compound of formula (Ay) by reacting a compound of formula (Ax) with an activating reagent and a coupling reagent: (Ay); c) Compound of chemical formula (Ay) S - Step of preparing a compound of chemical formula (Az) by reacting with methylisothiourea: (Az); and d) A step of preparing a compound of formula (A) by reacting a compound of formula (Az) with a basic reagent. In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (Ax) by reacting a compound of formula (Aw) with TMPMgCl·LiCl and BrCF2CF2Br: (Aw) (Ax); b) A step of preparing a compound of formula (Ay) by reacting a compound of formula (Ax) with NHS and EDC: (Ay); c) Compound of chemical formula (Ay) S - Step of preparing a compound of chemical formula (Az) by reacting with methylisothiourea: (Az); and d) A step of preparing the compound of formula (A) by reacting the compound of formula (Az) with NMI and DMA. In some embodiments, steps b) and c) take place in the same reaction vessel. In some embodiments, the conditions of steps (a) - (d) are exemplified in this specification. Chemical formula (A) - Step a) In some embodiments, in step a), the basic reagent is TMPMgCl·LiCl, LDA, LiHMDS, LiTMP or ( i It includes -Pr)2NMgCl·LiCl. In some embodiments, at step a), the basic reagent includes TMPMgCl·LiCl. In some embodiments, at step a), the basic reagent includes LDA. In some embodiments, at step a), the basic reagent includes LiHMDS. In some embodiments, at step a), the basic reagent includes LiTMP. In some embodiments, at step a), the basic reagent is ( i It includes -Pr)2NMgCl·LiCl. In some embodiments, in step a), the basic reagent is TMPMgCl·LiCl, LDA, LiHMDS, LiTMP, or ( i -Pr)2NMgCl·LiCl. In some embodiments, in step a), the basic reagent is TMPMgCl·LiCl. In some embodiments, in step a), the basic reagent is LDA. In some embodiments, in step a), the basic reagent is LiHMDS. In some embodiments, in step a), the basic reagent is LiTMP. In some embodiments, in step a), the basic reagent is ( i -Pr)2NMgCl·LiCl. In some embodiments, at step a), the brominating reagent comprises BrCF2CF2Br, BrCCl2CCl2Br, NBS, or Br2. In some embodiments, at step a), the brominating reagent comprises BrCF2CF2Br. In some embodiments, at step a), the brominating reagent comprises BrCCl2CCl2Br. In some embodiments, at step a), the brominating reagent comprises NBS. In some embodiments, at step a), the brominating reagent comprises Br2. In some embodiments, at step a), the brominating reagent is BrCF2CF2Br, BrCCl2CCl2Br, NBS, or Br2. In some embodiments, at step a), the brominating reagent is BrCF2CF2Br. In some embodiments, at step a), the brominating reagent is BrCCl2CCl2Br. In some embodiments, in step a), the brominating agent is NBS. In some embodiments, in step a), the brominating agent is Br2. In some embodiments, step a) involves the use of a solvent. In some embodiments, the solvent comprises THF, MTBE, or a mixture thereof. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises MTBE. In some embodiments, the solvent is THF, MTBE, or a mixture thereof. In some embodiments, the solvent is THF. In some embodiments, the solvent is MTBE. In some embodiments, step a) may include crystallization of a compound according to a method known to a person skilled in the art: . Chemical formula (A) - Step b) In some embodiments, at step b), the activating reagent comprises NHS or HOBt. In some embodiments, at step b), the activating reagent comprises NHS. In some embodiments, at step b), the activating reagent comprises HOBt. In some embodiments, at step b), the activating reagent is NHS or HOBt. In some embodiments, at step b), the activating reagent is NHS. In some embodiments, at step b), the activating reagent is HOBt. In some embodiments, at step b), the coupling reagent comprises EDC, DCC, DIC, CDI, or BTC. In some embodiments, the coupling reagent comprises EDC. In some embodiments, at step b), the coupling reagent comprises DCC. In some embodiments, at step b), the coupling reagent comprises CDI. In some embodiments, at step b), the coupling reagent comprises BTC. In some embodiments, at step b), the coupling reagent is EDC, DCC, CDI, or BTC. In some embodiments, the coupling reagent is EDC. In some embodiments, at step b), the coupling reagent is DCC. In some embodiments, at step b), the coupling reagent is CDI. In some embodiments, at step b), the coupling reagent is BTC. In some embodiments, step b) involves the use of a solvent. In some embodiments, the solvent comprises DCM, THF, 1,4-dioxane, MeCN, DMF, DMAc, or a mixture thereof. In some embodiments, the solvent comprises DCM. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises 1,4-dioxane. In some embodiments, the solvent comprises MeCN. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent comprises DMAc. In some embodiments, the solvent is DCM, THF, 1,4-dioxane, MeCN, DMF, DMAc, or a mixture thereof. In some embodiments, the solvent is DCM. In some embodiments, the solvent is THF. In some embodiments, the solvent is 1,4-dioxane. In some embodiments, the solvent is MeCN. In some embodiments, the solvent is DMF. In some embodiments, the solvent is DMAc. In some implementations, step b) includes the following: . Chemical formula (A) - Step c) In some embodiments, step c) may include filtration of the compound according to a method known to a person skilled in the art. In some embodiments, filtration involves the use of Ecosorb® C941 (Graver Technologies). In some implementations, step c) includes the use of the following: i. S-methylisothiourea hemisulfate salt, NaHCO3 and water; ii. Ecosorb ® C941; and iii. MeCN in water. In some implementations, step c) includes the following: . Chemical formula (A) - Step d) In some embodiments, at step d), the basic reagent comprises NMI, NaHCO3, Na2CO3, Li2CO3, DIPEA, TEA, or DBU. In some embodiments, the basic reagent comprises NMI. In some embodiments, at step d), the basic reagent comprises NMI. In some embodiments, at step d), the basic reagent comprises NaHCO3. In some embodiments, at step d), the basic reagent comprises Na2CO3. In some embodiments, at step d), the basic reagent comprises Li2CO3. In some embodiments, at step d), the basic reagent comprises DIPEA. In some embodiments, at step d), the basic reagent comprises TEA. In some embodiments, at step d), the basic reagent comprises DBU. In some embodiments, at step d), the basic reagent comprises NMI, NaHCO3, Na2CO3, Li2CO3, DIPEA, TEA, or DBU. In some embodiments, the basic reagent is NMI. In some embodiments, at step d), the basic reagent is NMI. In some embodiments, at step d), the basic reagent comprises NaHCO3. In some embodiments, at step d), the basic reagent comprises Na2CO3. In some embodiments, at step d), the basic reagent comprises Li2CO3. In some embodiments, at step d), the basic reagent comprises DIPEA. In some embodiments, at step d), the basic reagent is TEA. In some embodiments, at step d), the basic reagent comprises DBU. In some embodiments, step d) involves the use of a solvent. In some embodiments, the solvent is DMA, DMF, or a mixture thereof. In some embodiments, the solvent comprises DMA. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent is DMA, DMF, or a mixture thereof. In some embodiments, the solvent is DMA. In some embodiments, the solvent is DMF. In some embodiments, step d) may include crystallization of the compound according to a method known to a person skilled in the art: In some embodiments, step d) includes the following: . In some embodiments, the process for preparing a compound of formula (A) comprises the following: . In some embodiments, the process for preparing a compound of formula (A) comprises the following: . Chemical formula (B) In one aspect, the present disclosure provides a process for preparing a compound of formula (B). In some embodiments, the process comprises the following steps: a) A step of preparing a compound of formula (Bw) by reacting a compound of formula (Bv) with benzyl bromide and a basic reagent: (Bv) (Bw); b) Compound of chemical formula (Bw) s - A step of preparing a mixture of compounds of formula (Bx') and compounds of formula (Bx'') by reacting BuLi, a ligand, and acetaldehyde: (Bx') (Bx''); c) A step of preparing a compound of formula (By) by reacting a mixture of the compound of formula (Bx') and the compound of formula (Bx'') with H2, a catalyst, and a chiral acid: (By); d) A step of preparing a compound of formula (Bz) by reacting a compound of formula (By) with (Boc)2O and a basic reagent: (Bz); and e) A step of preparing a compound of formula (B) by reacting a compound of formula (Bz) with a basic reagent. In some embodiments, the process includes the following steps: a) A step of preparing a compound of formula (Bw) by reacting a compound of formula (Bv) with benzyl bromide and a basic reagent: (Bv) (Bw); b) Compound of chemical formula (Bw) s - Step of preparing a mixture of compounds of formula (Bx') and compounds of formula (Bx'') by reacting with BuLi, TMEDA, and acetaldehyde: (Bx') (Bx''); c) A step of preparing a compound of formula (By) by reacting a mixture of the compound of formula (Bx') and the compound of formula (Bx'') with H2, Pd / C and D-(+)-10-camphosulfonic acid: (By); d) A step of preparing a compound of formula (Bz) by reacting a compound of formula (By) with (Boc)2O and a basic reagent: (Bz); and e) A step of preparing a compound of formula (B) by reacting a compound of formula (Bz) with a basic reagent. In some embodiments, steps a) and b) take place in the same reaction vessel. In some embodiments, the conditions of steps (a) - (e) are exemplified in this specification. Chemical formula (B) - Step a) In some embodiments, step a) involves the use of a solvent. In some embodiments, the solvent comprises EtOH, DMF, THF, 2-MeTHF, acetone, toluene, or a mixture thereof. In some embodiments, the solvent comprises EtOH. In some embodiments, the solvent comprises DMF. In some embodiments, the solvent comprises THF. In some embodiments, the solvent comprises 2-MeTHF. In some embodiments, the solvent comprises acetone. In some embodiments, the solvent comprises toluene. In some embodiments, the solvent is EtOH, DMF, THF, 2-MeTHF, acetone, toluene, or a mixture thereof. In some embodiments, the solvent is EtOH. In some embodiments, the solvent is DMF. In some embodiments, the solvent is THF. In some embodiments, the solvent is 2-MeTHF. In some embodiments, the solvent is acetone. In some embodiments, the solvent is toluene. In some embodiments, at step a), the basic reagent comprises K2CO3, Na2CO3, NaHCO3, or KHCO3. In some embodiments, at step a), the basic reagent comprises K2CO3. In some embodiments, at step a), the basic reagent comprises Na2CO3. In some embodiments, at step a), the basic reagent comprises NaHCO3. In some embodiments, at step a), the basic reagent comprises KHCO3. In some embodiments, at step a), the basic reagent comprises K2CO3, Na2CO3, NaHCO3, or KHCO3. In some embodiments, at step a), the basic reagent is K2CO3. In some embodiments, at step a), the basic reagent is Na2CO3. In some embodiments, at step a), the basic reagent is NaHCO3. In some embodiments, at step a), the basic reagent is KHCO3. In some embodiments, step a...

Claims

Claim 1 Solid form of the compound of chemical formula (I): (I), where solid forms are: crystalline polymorphic form J; crystalline polymorphic form N; crystalline polymorphic form O; or crystalline polymorphic form AG. Claim 2 In paragraph 1, the solid form is a solid form that is a crystalline polymorphic form AG. Claim 3 In claim 2, the solid form is a solid form AG characterized by an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 ° 2θ and at least two peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 ° 2θ. Claim 4 A solid form AG characterized in that the solid form is a solid form comprising an XRPD pattern including a peak at approximately 13.1 ± 0.2 2θ and at least three peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Claim 5 A solid form AG characterized in that, in any one of claims 2 to 4, the solid form comprises an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least four peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Claim 6 A solid form AG characterized in that, in any one of claims 2 to 5, the solid form comprises an XRPD pattern comprising a peak at approximately 13.1 ± 0.2 2θ and at least five, at least six, at least seven, or at least eight peaks selected from the group consisting of 19.3 ± 0.2, 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 2θ. Claim 7 A solid form that is a solid form AG characterized by an XRPD pattern comprising: a peak at approximately 13.1 ± 0.2 ° 2θ and a peak at approximately 19.3 ± 0.2 ° 2θ; and at least one peak selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 ° 2θ. Claim 8 A solid form that is a form AG characterized by an XRPD pattern comprising: a peak at about 13.1 ± 0.2 ° 2θ and a peak at about 19.3 ± 0.2 ° 2θ; and at least two peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 ° 2θ. Claim 9 A solid form that is a form AG characterized by an XRPD pattern comprising: a peak at about 13.1 ± 0.2 ° 2θ and a peak at about 19.3 ± 0.2 ° 2θ; and at least three peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 ° 2θ. Claim 10 A solid form that is a form AG characterized by an XRPD pattern comprising: a peak at about 13.1 ± 0.2 ° 2θ and a peak at about 19.3 ± 0.2 ° 2θ; and at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 15.4 ± 0, 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 ° 2θ. Claim 11 A solid form that is a solid form AG characterized by an XRPD pattern comprising: at least two peaks selected from the group consisting of 13.1 ± 0.2, 19.3 ± 0.2 and 15.4 ± 0.2 2θ; and at least one peak selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2 2θ. Claim 12 In paragraph 2, the solid form is a solid form AG characterized by an XRPD pattern including characteristic peaks at 2θ of approximately 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.

2. Claim 13 In claim 12, the XRPD pattern further comprises at least one additional characteristic peak selected from the group consisting of 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2 and 10.7 ± 0.2, in a solid form. Claim 14 In claim 12, the XRPD pattern further comprises characteristic peaks at 2θ of approximately 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 in a solid form. Claim 15 A solid form that is a form AG characterized by an XRPD pattern comprising: peaks at about 13.1 ± 0.2, 19.3 ± 0.2, and 15.4 ± 0.2 at 2θ; and at least two, at least three, at least four, or at least five peaks selected from the group consisting of 18.5 ± 0.2, 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, and 10.7 ± 0.2 at 2θ. Claim 16 A solid form that is a form AG characterized by an XRPD pattern comprising: peaks at about 13.1 ± 0.2, 19.3 ± 0.2, 15.4 ± 0.2, and 18.5 ± 0.2 at 2θ; and one or more peaks at about 21.5 ± 0.2, 9.6 ± 0.2, 20.8 ± 0.2, 17.0 ± 0.2, 20.2 ± 0.2, or 10.7 ± 0.2 at 2θ. Claim 17 A solid form that is a form AG characterized by a TGA thermal analysis showing a weight loss of about 1.1% up to 180 ℃ in any one of claims 2 to 16. Claim 18 A solid form according to any one of claims 2 to 17, wherein the solid form is a solid form AG characterized by a DSC thermal analysis diagram including an endothermic peak at about 219 ℃. Claim 19 In any one of claims 2 to 18, the solid form is a solid form AG characterized by two or more of the following: a. an XRPD pattern including characteristic peaks at 2θ of about 19.3 ± 0.2, 13.1 ± 0.2, and 15.4 ± 0.2; b. a TGA thermograph showing a weight loss of about 1.1% at 180 °C; and c. a DSC thermograph including an endothermic peak at about 219 °C. Claim 20 In any one of paragraphs 3 to 19, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Claim 21 In paragraph 1, the solid form is a solid form that is a crystalline polymorphic form J. Claim 22 In claim 21, the solid form is a solid form J characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of 2θ of approximately 16.4 ± 0.2, 6.8 ± 0.2, 18.9 ± 0.2, 15.6 ± 0.2, 9.4 ± 0.2, 18.2 ± 0.2, 8.42 ± 0.2, 13.7 ± 0.2, 8.8 ± 0.2 and 19.7 ± 0.

2. Claim 23 A solid form of claim 21 or 22, wherein the solid form is a solid form J characterized by an XRPD diffraction pattern comprising at least three XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ± 0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2 2θ. Claim 24 A solid form that is form J, wherein the solid form is characterized by an XRPD diffraction pattern comprising at least four XRPD peaks selected from the group consisting of about 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.2 θ. Claim 25 A solid form that is form J, characterized in that, in any one of claims 21 to 24, the solid form comprises: XRPD peaks at 6.8±0.2 Fig. 2θ and 8.8±0.2 Fig. 2θ; and at least two XRPD peaks selected from the group consisting of about 16.4±0.2, 18.9±0.2, 15.6±0.2, 9.4±0.2, 18.2±0.2, 8.4±0.2, 13.7±0.2 and 19.7±0.2 Fig. 2θ. Claim 26 A solid form that is form J, characterized in that, in any one of claims 21 to 25, the solid form comprises: XRPD peaks at 6.8±0.2 Fig. 2θ and 8.8±0.2 Fig. 2θ; and at least three XRPD peaks selected from the group consisting of about 16.4±0.2, 18.9±0.2, 15.6±0.2, 9.4±0.2, 18.2±0.2, 8.4±0.2, 13.7±0.2 and 19.7±0.2 Fig. 2θ. Claim 27 A solid form that is a solid form, wherein in any one of claims 21 to 26, the solid form is characterized by an XRPD diffraction pattern comprising: XRPD peaks at 6.8±0.2 Fig. 2θ and 8.8±0.2 Fig. 2θ; and at least four XRPD peaks selected from the group consisting of about 16.4±0.2, 18.9±0.2, 15.6±0.2, 9.4±0.2, 18.2±0.2, 8.4±0.2, 13.7±0.2 and 19.7±0.2 Fig. 2θ. Claim 28 A solid form according to any one of claims 21 to 27, wherein the solid form is a solid form J characterized by an XRPD diffraction pattern including XRPD peaks at 16.4 ±0.2, 6.8 ±0.2, 18.9 ±0.2, 15.6 ±0.2, 9.4 ±0.2, 18.2 ±0.2, 8.4 ±0.2, 13.7 ±0.2, 8.8 ±0.2 and 19.7 ±0.

2. Claim 29 A solid form of any one of claims 21 to 28, wherein the solid form is a solid form J characterized by a thermogravimetric analysis (TGA) thermal analysis showing a weight loss of about 2.6% up to 180°C. Claim 30 A solid form according to any one of claims 21 to 29, wherein the solid form is a solid form J characterized by a differential scanning calorimetry (DSC) thermal analysis chart comprising at least one endothermic peak at about 110 °C, about 138 °C, or about 178 °C. Claim 31 A solid form according to any one of claims 21 to 30, wherein the solid form is a solid form J characterized by a differential DSC thermal analysis including endothermic peaks at about 110 ℃, about 138 ℃, and about 178 ℃. Claim 32 In any one of claims 21 to 31, the solid form is a solid form J characterized by two or more of the following: a. an XRPD pattern substantially as shown in FIG. 1; b. a TGA thermograph showing a weight loss of about 2.6% up to 180 °C; and c. a DSC thermograph including endothermic peaks at about 110 °C, about 138 °C, and about 178 °C. Claim 33 In any one of claims 21 to 32, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Claim 34 In paragraph 1, the solid form is a solid form that is a crystalline polymorphic form O. Claim 35 In claim 34, the solid form is characterized by an XRPD diffraction pattern comprising at least two XRPD peaks selected from the group consisting of 2θ of approximately 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.

2. Claim 36 In claim 34 or 35, the solid form is characterized by an XRPD diffraction pattern comprising: XRPD peaks at about 15.1 ± 0.2, 19.7 ± 0.2, and 9.3 ± 0.2 at 2θ; and at least three additional peaks selected from the group consisting of about 18.8 ± 0.2, 7.0 ± 0.2, 15.4 ± 0.2, 8.5 ± 0.2, 24.8 ± 0.2, 21.4 ± 0.2, and 15.9 ± 0.2 at 2θ. Claim 37 A solid form according to any one of claims 34 to 36, wherein the solid form is characterized by an XRPD diffraction pattern including XRPD peaks at 2θ of about 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.

2. Claim 38 A solid form according to any one of claims 34 to 37, wherein the solid form is characterized by a TGA thermal analysis showing a weight loss of about 3.1% up to 180 ℃. Claim 39 A solid form according to any one of claims 34 to 38, wherein the solid form is a solid form O characterized by a DSC thermal analysis diagram including at least one endothermic peak at about 70 °C or about 195 °C. Claim 40 A solid form according to any one of claims 34 to 39, wherein the solid form is a solid form O characterized by a DSC thermal analysis diagram including endothermic peaks at about 70 ℃ and about 195 ℃. Claim 41 In any one of claims 34 to 40, the solid form is a solid form O characterized by two or more of the following: a. XRPD peaks at 2θ of about 15.1 ±0.2, 19.7 ±0.2, 9.3 ±0.2, 18.8 ±0.2, 7.0 ±0.2, 15.4 ±0.2, 8.5 ±0.2, 24.8 ±0.2, 21.4 ±0.2 and 15.9 ±0.2; b. TGA thermal analysis showing a weight loss of about 3.1% up to 180 °C; and c. DSC thermal analysis including endothermic peaks at about 70 °C and about 195 °C. Claim 42 In any one of paragraphs 35 to 41, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Claim 43 In paragraph 1, the solid form is a solid form that is a crystalline polymorphic form N. Claim 44 In claim 43, the solid form is characterized by an XRPD diffraction pattern comprising at least two peaks selected from the group consisting of 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2 and 6.6 ± 0.

2. Claim 45 A solid form according to claim 43 or 44, wherein the solid form is characterized by an XRPD pattern comprising at least three, at least four, at least five, at least six, or at least seven peaks selected from the group consisting of 2θ of about 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.

2. Claim 46 In any one of claims 43 to 45, the solid form is characterized by an XRPD pattern comprising: at least one peak selected from the group consisting of about 15.7 ± 0.2, 16.1 ± 0.2 and 15.5 ± 0.2 2θ; and at least one, at least two, at least three, or at least four peaks selected from the group consisting of about 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2 and 6.6 ± 0.2 2θ. Claim 47 A solid form according to any one of claims 43 to 46, wherein the solid form is characterized by XRPD pattern peaks at 2θ of approximately 15.7 ± 0.2, 16.1 ± 0.2, 15.5 ± 0.2, 19.6 ± 0.2, 20.6 ± 0.2, 24.0 ± 0.2, 21.2 ± 0.2, 5.7 ± 0.2, 22.3 ± 0.2, and 6.6 ± 0.

2. Claim 48 A solid form according to any one of claims 43 to 47, wherein the solid form is characterized by a TGA thermal analysis showing a weight loss of about 3.9% up to 180 ℃. Claim 49 A solid form according to any one of claims 43 to 48, wherein the solid form is characterized by a DSC thermal analysis diagram comprising at least one endothermic peak at about 60 ℃, about 131 ℃, or about 172 ℃. Claim 50 In any one of paragraphs 43 to 49, the XRPD spectrum is obtained using a Cu Kα source in a solid form. Claim 51 A pharmaceutical composition comprising a solid form of any one of claims 1 to 50 and at least one pharmaceutically acceptable excipient. Claim 52 A pharmaceutical composition according to claim 51, wherein the solid form is the solid form of any one of claims 2 to 20. Claim 53 A pharmaceutical composition according to claim 51, wherein the solid form is the solid form of any one of claims 21 to 33. Claim 54 In paragraph 51, the solid form is a pharmaceutical composition that is the solid form of any one of paragraphs 34 to 42. Claim 55 In paragraph 51, the solid form is a pharmaceutical composition that is the solid form of any one of paragraphs 43 to 50. Claim 56 A method for treating cancer in a subject, comprising the step of administering to the subject a therapeutically effective amount of a solid form of any one of claims 1 to 50 or a pharmaceutical composition of any one of claims 51 to 55. Claim 57 In paragraph 56, the cancer is characterized by a KRas mutation. Claim 58 In paragraph 57, the KRas mutation is KRas G12D A method corresponding to a mutation. Claim 59 In any one of paragraphs 56 to 58, the cancer is a method regardless of tissue. Claim 60 A method in which, in any one of paragraphs 56 to 59, the cancer is pancreatic cancer, lung cancer, or colorectal cancer. Claim 61 A method for controlling the activity of a KRas mutant protein, comprising reacting the mutant protein with the solid form of any one of claims 1 to 50 or with the pharmaceutical composition of any one of claims 51 to 55. Claim 62 A method for inhibiting the proliferation of a cell population, comprising contacting a cell population with a solid form according to any one of claims 1 to 50 or with a pharmaceutical composition according to any one of claims 51 to 55. Claim 63 In paragraph 62, the inhibition of proliferation is measured as a reduction in the cell viability of a cell population. Claim 64 A method for inhibiting tumor metastasis of a subject, comprising the step of administering to the subject a therapeutically effective amount of a solid form of any one of claims 1 to 50 or a pharmaceutical composition of any one of claims 51 to 55. Claim 65 A solid form of a compound of formula (I) according to any one of claims 1 to 50 or a pharmaceutical composition according to any one of claims 51 to 55 for use in cancer treatment. Claim 66 Use of a solid form of a compound of formula (I) according to any one of claims 1 to 50 or a pharmaceutical composition according to any one of claims 51 to 55 for the treatment of cancer. Claim 67 The use of a solid form of a compound of formula (I) according to any one of claims 1 to 50 or a pharmaceutical composition according to any one of claims 51 to 55 in the manufacture of a drug for cancer treatment. Claim 68 As a process for preparing a compound of chemical formula (I), (I), process comprising the following steps: a) a step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C);b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing a compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E);d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G);e) A step of preparing a compound of formula (Ja) by reacting a compound of formula (G) with a compound of formula (Ha): (Ha) (Ja)(Here, Boc is tert -butyloxycarbonyl); and f) a step of preparing a compound of formula (I) by reacting a compound of formula (Ja) with an acidic reagent. Claim 69 As a process for preparing a compound of chemical formula (I), (I), comprising the following steps: a) a step of preparing a compound of formula (C) by reacting a compound of formula (A) with a compound of formula (B): (A) (B) (C);b) A step of preparing a compound of formula (D) by reacting a compound of formula (C) with one or more reagents: (D); c) A step of preparing a compound of formula (E) by reacting the compound of formula (D) with an oxidizing agent: (E);d) A step of preparing a compound of formula (G) by reacting a compound of formula (E) with a compound of formula (F): (F) (G);e) A step of preparing a compound of formula (J) by reacting a compound of formula (G) with a compound of formula (H): (H) (J) (where PMB is para-methoxybenzyl); and f) a step of reacting the compound of formula (J) with an acidic reagent to prepare the compound of formula (I); wherein steps c) and d) take place in the same reaction vessel. Claim 70 A process according to claim 68 or 69 in which the compound of formula (I) prepared in step f) is isolated as crystalline AG. Claim 71 In paragraph 68, steps c) and d) are a process that takes place in the same reaction vessel. Claim 72 In paragraph 68, the compound of formula (Ha) is prepared by a process comprising the following steps: a) a step of preparing a compound of formula (Hv) by reacting a compound of formula (Hu) with NBS: (Hu) (Hv); b) a step of preparing a compound of formula (Hw) by reacting a compound of formula (Hv) with hydrogen in a platinum / vanadium / carbon catalyst; (Hw);c) Step of preparing a compound of formula (Hr) by reacting a compound of formula (Hw) with NIS: (Hr); d) A compound of chemical formula (Hr) di- tert - Step of preparing a compound of the chemical formula (Hs) by reacting with butyl dicarbonate: (Hs);e) A step of preparing a compound of formula (Ht) by reacting a compound of formula (Hs) with MeO2CCF2SO2F in the presence of CuI: (Ht); and f) compounds of the chemical formula (Ht) i -PrMgCl·LiCl and B(O i Step of preparing a compound of the chemical formula (Ha) by reacting with -Pr)3. Claim 73 In paragraph 69, the compound of formula (H) is prepared by a process comprising the following steps: a) a step of preparing a compound of formula (Hv) by reacting a compound of formula (Hu) with NBS: (Hu) (Hv); b) a step of preparing a compound of formula (Hw) by reacting a compound of formula (Hv) with hydrogen in a platinum / vanadium / carbon catalyst; (Hw);c) A step of preparing a compound of formula (Hx) by reacting a compound of formula (Hw) with para-methoxybenzyl chloride (PMBCl): (Hx); d) Step of preparing a compound of formula (Hy) by reacting a compound of formula (Hx) with NIS: (Hy);e) A step of preparing a compound of chemical formula (Hz) by reacting a compound of chemical formula (Hy) with MeO2CCF2SO2F in the presence of CuI: (Hz); and f) compounds of the chemical formula (Hz) n - A step of preparing a compound of chemical formula (H) by reacting with BuLi and B(OiPr)3. Claim 74 In paragraph 72 or 73, steps a)-f) are a process that takes place in the same reaction vessel. Claim 75 In claim 68 or 69, the compound of formula (B) is prepared by a process comprising the following steps: a) reacting the compound of formula (Bv) with benzyl bromide to prepare the compound of formula (Bw): (Bv) (Bw);b) Compound of chemical formula (Bw) s - Step of preparing a mixture of compounds of formula (Bx') and compounds of formula (Bx'') by reacting with BuLi, TMEDA, and acetaldehyde: (Bx') (Bx''); c) a step of preparing a compound of formula (By) by reacting a mixture of the compound of formula (Bx') and the compound of formula (Bx'') with H2, Pd / C and D(+)-10-camphosulfonic acid: (By); d) Step of preparing a compound of formula (Bz) by reacting a compound of formula (By) with (Boc)2O: (Bz); and e) a step of preparing a compound of formula (B) by reacting a compound of formula (Bz) with a basic reagent. Claim 76 In paragraph 75, steps a) - e) are processes that take place in the same reaction vessel. Claim 77 In claim 68 or 69, the process wherein the compound of formula (A) is prepared by a process comprising the following steps: a) reacting the compound of formula (Aw) with TMPMgCl·LiCl and BrCF2CF2Br to prepare the compound of formula (Ax): (Aw) (Ax); b) Step of preparing a compound of formula (Ay) by reacting a compound of formula (Ax) with NHS and EDC: (Ay); c) Compound of chemical formula (Ay) S - Step of preparing a compound of chemical formula (Az) by reacting with methylisothiourea: (Az); and d) a step of preparing the compound of formula (A) by reacting the compound of formula (Az) with NMI and DMA. Claim 78 In paragraph 77, steps b) and c) are a process that takes place in the same reaction vessel. Claim 79 In Clause 77, step c) is a process including the use of the following: vii. S-methylisothiourea hemisulfate salt, NaHCO3 and water; viii. Ecosorb ® C941; and ix. MeCN in water. Claim 80 A process in which, in paragraph 68, the compound of formula (A) is prepared by the process of paragraph 77; the compound of formula (B) is prepared by the process of paragraph 75; and the compound of formula (Ha) is prepared by the process of paragraph 72. Claim 81 A process in which, in paragraph 69, the compound of formula (A) is prepared by the process of paragraph 77; the compound of formula (B) is prepared by the process of paragraph 75; and the compound of formula (H) is prepared by the process of paragraph 73. Claim 82 In paragraph 68 or 69, the compound of formula (A) is Example 5 A process manufactured by any one of the exemplary processes disclosed in this specification, such as the process of. Claim 83 In paragraph 68 or 69, the compound of formula (B) Example 6 A process manufactured by any one of the exemplary processes disclosed in this specification, such as the process of. Claim 84 In paragraph 68, the compound of the chemical formula (Ha) is Example 11 A process manufactured by any one of the exemplary processes disclosed in this specification, such as the process of. Claim 85 In paragraph 69, the compound of formula (H) is Example 8 A process manufactured by any one of the exemplary processes disclosed in this specification, such as the process of. Claim 86 A process for preparing a compound of chemical formula (A), (A), a process comprising the following steps: a) reacting a compound of formula (Aw) with TMPMgCl·LiCl and BrCF2CF2Br to prepare a compound of formula (Ax): (Aw) (Ax); b) Step of preparing a compound of formula (Ay) by reacting a compound of formula (Ax) with NHS and EDC: (Ay); c) Compound of chemical formula (Ay) S - Step of preparing a compound of chemical formula (Az) by reacting with methylisothiourea: (Az); and d) a step of preparing the compound of formula (A) by reacting the compound of formula (Az) with NMI and DMA. Claim 87 In paragraph 86, steps b) and c) are a process that takes place in the same reaction vessel. Claim 88 A process for preparing a compound of chemical formula (B), (B), process comprising the following steps: a) a step of preparing a compound of formula (Bw) by reacting a compound of formula (Bv) with benzyl bromide: (Bv) (Bw);b) Compound of chemical formula (Bw) s - Step of preparing a mixture of compounds of formula (Bx') and compounds of formula (Bx'') by reacting with BuLi, TMEDA, and acetaldehyde: (Bx') (Bx''); c) a step of preparing a compound of formula (By) by reacting a mixture of the compound of formula (Bx') and the compound of formula (Bx'') with H2, Pd / C and D(+)-10-camphosulfonic acid: (By); d) Step of preparing a compound of formula (Bz) by reacting a compound of formula (By) with (Boc)2O: (Bz); and e) a step of preparing a compound of formula (B) by reacting a compound of formula (Bz) with a basic reagent. Claim 89 In paragraph 88, steps a)-e) are processes that take place in the same reaction vessel. Claim 90 As a process for preparing a compound of the chemical formula (Ha), (Ha), process comprising the following steps: a) a step of preparing a compound of formula (Hv) by reacting a compound of formula (Hu) with NBS: (Hu) (Hv); b) a step of preparing a compound of formula (Hw) by reacting a compound of formula (Hv) with hydrogen in a platinum / vanadium / carbon catalyst; (Hw);c) Step of preparing a compound of formula (Hr) by reacting a compound of formula (Hw) with NIS: (Hr); d) A compound of chemical formula (Hr) di- tert - Step of preparing a compound of the chemical formula (Hs) by reacting with butyl dicarbonate: (Hs);e) A step of preparing a compound of formula (Ht) by reacting a compound of formula (Hs) with MeO2CCF2SO2F in the presence of CuI: (Ht); and f) compounds of the chemical formula (Ht) i -PrMgCl·LiCl and B(O i Step of preparing a compound of the chemical formula (Ha) by reacting with -Pr)3. Claim 91 As a process for preparing a compound of chemical formula (H), (H), process comprising the following steps: a) a step of preparing a compound of formula (Hv) by reacting a compound of formula (Hu) with NBS: (Hu) (Hv); b) a step of preparing a compound of formula (Hw) by reacting a compound of formula (Hv) with hydrogen in a platinum / vanadium / carbon catalyst; (Hw);c) Step of preparing a compound of formula (Hx) by reacting a compound of formula (Hw) with PMBCl: (Hx); d) Step of preparing a compound of formula (Hy) by reacting a compound of formula (Hx) with NIS: (Hy);e) A step of preparing a compound of chemical formula (Hz) by reacting a compound of chemical formula (Hy) with MeO2CCF2SO2F in the presence of CuI: (Hz); and f) compounds of the chemical formula (Hz) n - A step of preparing a compound of chemical formula (H) by reacting with BuLi and B(OiPr)3. Claim 92 In paragraph 90 or 91, steps a)-f) are a process that takes place in the same reaction vessel. Claim 93 In paragraph 90 or 91, step b) involves the use of a solvent, wherein the solvent is EtOAc or i The PrOAc process. Claim 94 Compound of chemical formula (Ha): (Ha). Claim 95 Compound of chemical formula (By): (By).

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