Devices and methods for mitigating diffraction effects for electronic device having multiple OPTO-electronic components

Abstract

The present disclosure relates to electronic devices having a display panel and a plurality of opto-electronic components, and in particular, mechanisms for mitigating diffraction effects when exchanging light, by such opto-electronic components, through at least one transmissive region of the display panel. The display panel may one of: be, and comprise, a layered semiconductor device, which in some non-limiting examples, may be an opto-electronic device, having a plurality of (sub-) pixel emissive regions, each comprising first and second electrodes separated by at least one semiconducting layer.

Description

Atty. Dkt. No. 114246-0448DEVICES AND METHODS FOR MITIGATING DIFFRACTION EFFECTS FOR ELECTRONIC DEVICE HAVING MULTIPLE OPTO-ELECTRONIC COMPONENTSRELATED APPLICATIONS

[0001] The present application claims the benefit of priority to U.S. Provisional Patent Application No. US 63 / 578,758 filed August 25, 2023, the contents of which are incorporated herein by reference in their entirety.TECHNICAL FIELD

[0002] The present disclosure relates to electronic devices having a display panel and a plurality of opto-electronic components, and in particular, mechanisms for mitigating diffraction effects when exchanging light, by such opto-electronic components, through at least one transmissive region of the display panel. The display panel may one of be, and comprise, a layered semiconductor device, which in some non-limiting examples, may be an opto-electronic device, having a plurality of (sub-) pixel emissive regions, each comprising first and second electrodes separated by at least one semiconducting layer.BACKGROUND

[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at least one semiconducting layer, comprising an emissive layer, may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes and electrons combine, light, in the form of a photon, may be emitted by the emissive layer.

[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (including without limitation, one of three, and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by one of three, and four, different colors, including without limitation, R(ed), G(reen), and B(lue). Each (sub-) pixel may have an associated emissive region, comprising a stack of an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, each14864-9652-5787.1Atty. Dkt. No. 114246-0448 sub-pixel of a pixel may emit light, including without limitation, photons, that have an associated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit comprising at least one thin-film transistor (TFT) structure electrically coupled with conductive metal lines, in some nonlimiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Various coatings (layers) of such panels may, in some non-limiting examples, be formed by vacuum-based deposition processes.

[0005] In AMOLED panels, light may be emitted by a (sub-) pixel when a voltage is applied across an anode and a cathode of the (sub-) pixel. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of light from each (sub-) pixel of such panel. In cases where a common cathode is provided across multiple (sub-) pixels, the voltage across the anode and the cathode in each (sub-) pixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non-emissive region may be provided therebetween.

[0006] In some non-limiting examples, such panels may be housed in electronic devices, including without limitation, mobile user devices, such as, smartphones. In some nonlimiting examples, such electronic device may comprise an opto-electronic component that at least one of: emits, and receives, light, including without limitation, a camera to capture an image of the light emitted from beyond the electronic device.

[0007] In some non-limiting examples, such user devices may incorporate a mechanism for biometric authentication of a user thereof before allowing the user to gain access to the user device. Such a mechanism may involve a facial identification system in which a grid of dots of infrared (IR) light is projected, including without limitation, by an IR emitter, such as, a dot projector, in a grid onto a facial surface of the user. The system captures an image of the projected dots on the surface, including without limitation, by an IR camera, and generates a map therefrom. The generated map may be compared to a reference map and if there is sufficient correspondence between them, the user device may be unlocked, allowing the user to access its hardware and associated software. In some non-limiting examples, the facial identification system may comprise a flood illuminator for shining IR light at the facial surface of the user.24864-9652-5787.1Atty. Dkt. No. 114246-0448

[0008] While in some non-limiting examples, at least one opto-electronic component, including without limitation, the camera, and at least one of the components of the facial identification system, including without limitation, at least one of the: dot projector, flood illuminator, and IR camera, may be positioned such that the light that is at least one of: emitted, and captured, by such at least one opto-electronic component, does not pass through the panel, increasingly, there may be an aim to house such opto-electronic component within the user device and under the display panel, such that the light that is at least one of: emitted, and captured, by such at least one opto-electronic component, passes through the panel.

[0009] In some non-limiting examples, at least a part of the panel may be made to at least one of: be substantially transparent, and to allow light, including without limitation, at least one dot of light, to pass therethrough, while still being capable of emitting light therefrom. In some non-limiting examples, the panel may comprise at least one transmissive region lying within at least one non-emissive region extending between the (sub-) pixel emissive regions.

[0010] In some non-limiting examples, there may be at least one constraint on at least one of a: number, location, size, and configuration, of the at least one transmissive region relative to at least one of a: number, location, size, and configuration, of the at least one (sub-) pixel emissive regions.

[0011] In some non-limiting examples, increasing an aperture ratio (for (a part of) the panel) of the at least one transmissive region relative to an aperture ratio (for a corresponding (part of the) panel) of the at least one (sub-) pixel emissive regions, may facilitate transmission of light through the panel.

[0012] In some non-limiting examples, such an increase may impact an ability to at least one of: secure a minimum area of the panel devoted to light-emitting (sub-) pixels, and maintain a minimum pixel density (including without limitation, as measured in pixels per inch (ppi)) of the panel.

[0013] In some non-limiting examples, such an increase may impact an ability to arrange the at least one transmissive region among the at least one (sub-) pixel emissive region(s) such that at least one of: the panel, and a (sub-) pixel layout thereof, may appear to be substantially uniform to a user thereof.34864-9652-5787.1Atty. Dkt. No. 114246-0448

[0014] In some applications, where at least one of the opto-electronic component s), including without limitation, the dot projector, and the (IR) camera, are disposed under the panel, the light, including without limitation, that corresponding to a dot, that is at least one of: projected onto, and reflected off, the facial surface, passes, at least partially, through the at least one transmissive region.

[0015] Because the panel comprises, in addition to the at least one transmissive region, at least one of a: substantially non-transmissive region, and region having substantially reduced transmissivity, including without limitation, the at least one emissive region(s) and parts of the non-emissive regions, the light exchanged by the under-display component through the panel may become diffracted as a result of passing through the transmissive regions, which may at least one of: distort the transmitted light, redistribute energy of the light across an enlarged area, and cause interference therewith. In some non-limiting examples, the diffraction may impact the ability to distinguish individual features, causing at least one of: blending, and loss, of information, including without limitation, high- frequency information, and phase information, which in some non-limiting examples, may be challenging to compensate for, and accordingly prevent a certain function of the user device from being properly performed.

[0016] In some non-limiting examples, there may be an aim to provide a mechanism for mitigating such diffraction effects.BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different figures indicate at least one of: identical, and in some non-limiting examples, at least one of: analogous, and corresponding elements, and in which:

[0018] FIG. 1 is a schematic diagram illustrating an example cross-sectional view of an example user device, comprising a body, a display panel having a plurality of layers, comprising at least one aperture therewithin, through which at least one electromagnetic signal may be exchanged, and at least one under-display component within the device, according to an example in the present disclosure;

[0019] FIG. 2A shows an example fragment of at least one display part of the display panel of FIG. 1, according to an example in the present disclosure;44864-9652-5787.1Atty. Dkt. No. 114246-0448

[0020] FIGs. 2B and 2C show various example fragments of a signal-exchanging part comprising at least one transmissive region, according to an example in the present disclosure;

[0021] FIGs. 3A-3B, and 3C-3D are respective sets of stacked schematic diagrams illustrating respectively in plan and in cross-section, an example cross-sectional view of a fragment of a signal-exchanging part of a display panel, showing an aperture of a transmissive region whose boundary is defined by an intersection of a boundary of a first layer aperture with a boundary of a second layer aperture according to an example in the present disclosure;

[0022] FIGs. 4A and 4B are example schematic diagrams illustrating an optical system, according to an example in the present disclosure;

[0023] FIG. 5A schematically shows an experimental set-up, in which a point source is viewed by a receiver through a display panel, according to an example in the present disclosure;

[0024] FIG. 5B shows an image recorded by the receiver of FIG. 5A, according to an example in the present disclosure;

[0025] FIG. 5C shows a plot of normalized intensity profile of the recorded diffraction pattern of FIG. 5A as a function of a spatial position, along with an intensity profile of a theoretical PSF of a point source without considering a beam distribution, and an intensity profile of a simulated PSF that accounts for a beam distribution, calculated for the experimental set-up of FIG. 5A, according to an example in the present disclosure;

[0026] FIG. 5D shows a simulated image that reflects the simulated PSF illustrated in FIG. 5C, according to an example in the present disclosure;

[0027] FIG. 6A is a plan view of a user device comprising a display panel, according to an example in the present disclosure;

[0028] FIG. 6B shows a cross-sectional view of the display panel of FIG. 6A, according to an example in the present disclosure;

[0029] FIGs. 7A-7B are schematic diagrams showing a distribution of a first PSF and an intensity plot thereof, respectively, FIGs. 7C-7D are schematic diagrams showing a distribution of a second PSF and an intensity plot thereof, respectively, and FIGs. 7E-7F54864-9652-5787.1Atty. Dkt. No. 114246-0448 are schematic diagrams showing the distribution of the first PSF superimposed over the distribution of the second PSF, and the intensity plot of the first PSF superimposed over the intensity plot of the second PSF, respectively, according to an example in the present disclosure;

[0030] FIGs. 8A-8B are schematic diagrams showing a distribution of a first PSF and an intensity plot thereof, respectively, FIGs. 8C-8D are schematic diagrams showing a distribution of a second PSF and an intensity plot thereof, respectively, and FIGs. 8E-8F are schematic diagrams showing the distribution of the first PSF superimposed over the distribution of the second PSF, and the intensity plot of the first PSF superimposed over the intensity plot of the second PSF, respectively, according to an example in the present disclosure;

[0031] FIGs. 9A-9B are schematic diagrams showing a distribution of a first PSF and an intensity plot thereof, respectively, FIGs. 9C-9D are schematic diagrams showing a distribution of a second PSF and an intensity plot thereof, respectively, and FIGs. 9E-9F are schematic diagrams showing the distribution of the first PSF superimposed over the distribution of the second PSF, and the intensity plot of the first PSF superimposed over the intensity plot of the second PSF, respectively, according to an example in the present disclosure;

[0032] FIGs. 10A-10B are schematic diagrams showing a distribution of a first PSF and an intensity plot thereof, respectively, FIGs. 10C-10D are schematic diagrams showing a distribution of a second PSF and an intensity plot thereof, respectively, and FIGs. 10E-10F are schematic diagrams showing the distribution of the first PSF superimposed over the distribution of the second PSF, and the intensity plot of the first PSF superimposed over the intensity plot of the second PSF, respectively, according to an example in the present disclosure;

[0033] FIGs. 11A-11E are schematic diagrams showing, in plan, at least a fragment of various example signal-exchange parts of the display panel of FIG. 6, according to an example in the present disclosure;

[0034] FIGs. 12A-12B shows, in plan, fragments of various example signal-exchanging parts of the display panel of FIG. 1, according to an example in the present disclosure;64864-9652-5787.1Atty. Dkt. No. 114246-0448

[0035] FIGs. 13 shows, in plan, fragments of various example signal-exchanging parts of the display panel of FIG. 1, according to an example in the present disclosure;

[0036] FIGs. 14 shows, in plan, fragments of various example signal-exchanging parts of the display panel of FIG. 1, according to an example in the present disclosure;

[0037] FIGs. 15 shows, in plan, fragments of various example signal-exchanging parts of the display panel of FIG. 1, according to an example in the present disclosure;

[0038] FIGs. 16A-16JJ are schematic diagrams showing, in plan, a series of example coupons, each comprising a different layout of a plurality of transmissive regions, according to an example in the present disclosure;

[0039] FIG. 17 shows images recorded by the experimental set-up of FIG. 5A, through each of example coupons A1-F6, according to an example in the present disclosure;

[0040] FIG. 18A is a schematic diagram showing, in plan, distributions of PSFs of Sample Coupon A3 and Sample Coupon A5, and the interaction therebetween, reproduced based on the recorded image of FIG. 17, according to an example in the present disclosure;

[0041] FIG. 18B is a schematic diagram showing, in plan, distributions of PSFs of Sample Coupon E2 and Sample Coupon E4, and the interaction therebetween, reproduced based on the recorded image of FIG. 17, according to an example in the present disclosure;

[0042] FIG. 18C is a schematic diagram showing, in plan, distributions of PSFs of Sample Coupon F3 and Sample Coupon F4, and the interaction therebetween, reproduced based on the recorded image of FIG. 17, according to an example in the present disclosure;

[0043] FIG. 18D is a schematic diagram showing, in plan, distributions of PSFs of Sample Coupon D4 and Sample Coupon E6, and the interaction therebetween, reproduced based on the recorded image of FIG. 17, according to an example in the present disclosure;

[0044] FIG. 19 is a schematic diagram illustrating an example version of the device of FIG. 1 in a cross-sectional view, according to an example in the present disclosure;

[0045] FIG. 20 is a flow chart showing method actions, according to an example in the present disclosure;

[0046] FIG. 21 is a simplified block diagram from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closed74864-9652-5787.1Atty. Dkt. No. 114246-0448 coating of deposited material in a second portion thereof, according to an example in the present disclosure;

[0047] FIG. 22 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 21, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure;

[0048] FIG. 23 is a schematic diagram showing an example process for depositing a patterning coating in a pattern on an exposed layer surface of an underlying layer in an example version of the device of FIG. 22, according to an example in the present disclosure;

[0049] FIG. 24 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises the deposited pattern of the patterning coating of FIG. 23 where the patterning coating is a nucleation-inhibiting coating (NIC) according to an example in the present disclosure;

[0050] FIG. 25A is a schematic diagram illustrating an example version of the device of FIG. 22 in a cross-sectional view according to an example in the present disclosure;

[0051] FIG. 25B is a schematic diagram illustrating the device of FIG. 25A in a complementary plan view according to an example in the present disclosure;

[0052] FIGs. 26A-26B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG. 22 according to various examples in the present disclosure;

[0053] FIGs. 27A-27H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG. 22, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;

[0054] FIG. 28 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 22 with additional example deposition steps according to an example in the present disclosure;

[0055] FIG. 29 is a schematic diagram that may show example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions84864-9652-5787.1Atty. Dkt. No. 114246-0448 having a second electrode of different thickness according to an example in the present disclosure;

[0056] FIG. 30 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device in which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;

[0057] FIG. 31 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a sheltered region, such as a recess, in a non-emissive region thereof according to an example in the present disclosure;

[0058] FIGs. 32A-32B are schematic diagrams that show example cross-sectional views of an example OLED device having a partition and a sheltered region, such as an aperture, in a non-emissive region, according to various examples in the present disclosure;

[0059] FIG. 33 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;

[0060] FIG. 34 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and

[0061] FIG. 35 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.

[0062] In the present disclosure, a reference numeral having at least one of: at least one numeric value (including without limitation, in at least one of: superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of: a particular instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to the reference numeral without reference to the at least one of: the appended value(s), and the character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of: the reference numeral, and the set of all instances described thereby. Similarly, a reference numeral may have the letter “x’ in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of: a numeric digit, and the set of all instances described thereby.94864-9652-5787.1Atty. Dkt. No. 114246-0448

[0063] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to not obscure the description of the present disclosure with unnecessary detail.

[0064] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.

[0065] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.

[0066] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0067] Any feature shown in dashed outline, unless the context indicates otherwise, may in some examples be considered as optional.SUMMARY

[0068] The present disclosure discloses an electronic device, a display panel thereof, and a method for operating the electronic device. The electronic device comprises a display panel extending in a lateral aspect defined by a lateral axis and comprising at least one signalexchanging part, and a plurality of opto-electronic components. The signal-exchanging part comprises a plurality of emissive regions, each corresponding to a (sub-) pixel; and a plurality of transmissive regions, each transmissive region being disposed between adjacent emissive regions in the lateral aspect. A first opto-electronic component and a second optoelectronic component are each adapted to at least one of: emit, and receive, light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and nearinfrared (NIR), spectrum, and each has, associated therewith, a point spread function (PSF) comprising a main lobe and at least one side lobe. The first opto-electronic component is arranged behind a first one of the at least one signal-exchanging part(s) of the display panel, such that light that is the at least one of: emitted, and received, by the first opto-electronic104864-9652-5787.1Atty. Dkt. No. 114246-0448 component passes through at least one of the transmissive region(s) of the first signalexchanging part. A first PSF associated with the first opto-electronic component comprises a component associated with a layout of the at least one transmissive region(s) of the first signal-exchanging part, and differs from a second PSF associated with the second optoelectronic component, in at least one of a(n): distribution, and intensity, of at least one of the: main, and at least one side, lobe.

[0069] According to a broad aspect, there is disclosed an electronic device comprising: a display panel extending in a lateral aspect defined by a lateral axis and comprising at least one signal-exchanging part comprising: a plurality of emissive regions, each corresponding to a (sub-) pixel; and a plurality of transmissive regions, each transmissive region being disposed between adjacent emissive regions in the lateral aspect, a first opto-electronic component and a second opto-electronic component, each adapted to at least one of: emit, and receive, light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and near-infrared (NIR), spectrum, and each having, associated therewith, a point spread function (PSF) comprising a main lobe and at least one side lobe; wherein: the first opto-electronic component is arranged behind a first one of the at least one signalexchanging part(s) of the display panel, such that light that is the at least one of: emitted, and received, by the first opto-electronic component passes through at least one of the transmissive region(s) of the first signal-exchanging part; and a first PSF associated with the first opto-electronic component comprises a component associated with a layout of the at least one transmissive region(s) of the first signal-exchanging part, and differs from a second PSF associated with the second opto-electronic component, in at least one of a(n): distribution, and intensity, of at least one of the: main, and at least one side, lobe.

[0070] In some non-limiting examples, a side-lobe pattern of the first PSF may be substantially devoid of a side lobe that overlaps with a side-lobe pattern of the second PSF.

[0071] In some non-limiting examples, a side-lobe pattern of the first PSF may at least partially overlap with a side-lobe pattern of the second PSF.

[0072] In some non-limiting examples, a first subset of the at least one side lobe of the first PSF may at least partially overlap with one of: all, and a subset of, the side lobes of the second PSF.114864-9652-5787.1Atty. Dkt. No. 114246-0448

[0073] In some non-limiting examples, a second subset of the at least one side lobe of the first PSF may be substantially devoid of a side lobe that overlaps with any side lobe of the second PSF.

[0074] In some non-limiting examples, each side lobe of one of the: first, and second, PSF, may correspond to and at least partially overlap with a side lobe of the other of the: first, and second, PSF.

[0075] In some non-limiting examples, the overlap between the side-lobe pattern of the first PSF and the side-lobe pattern of the second PSF may be one of no more than about: 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0076] In some non-limiting examples, an intensity of the at least one side lobe of the first PSF may differ from an intensity of the at least one side lobe of the second PSF, in at least one of: a profile, and an intensity level.

[0077] In some non-limiting examples, the main lobe of the first PSF may at least partially overlap with a side lobe of the second PSF.

[0078] In some non-limiting examples, a distribution of the main lobe of the first PSF may differ from a distribution of the main lobe of the second PSF.

[0079] In some non-limiting examples, the main lobe of the first PSF may differ from the main lobe of the second PSF, in at least one of: a profile, and an intensity level.

[0080] In some non-limiting examples, the layout of the at least one transmissive region of the at least one signal-exchanging part may be characterized by at least one of a: size, shape, orientation, and pitch, thereof.

[0081] In some non-limiting examples, the second opto-electronic component may be arranged behind a second one of the at least one signal-exchanging part, such that light that is the at least one of: emitted, and received, by the second opto-electronic component may pass through at least one of the transmissive regions of the second signal-exchanging part, and the second PSF may comprise a component associated with a layout of the at least one transmissive region(s) of the second signal-exchanging part that is different from the layout of the at least one transmissive region(s) of the first signal-exchanging part, in at least one of the: size, shape, orientation, and pitch, thereof.124864-9652-5787.1Atty. Dkt. No. 114246-0448

[0082] In some non-limiting examples, the first opto-electronic component and the second opto-electronic component may be spaced apart in the lateral aspect of the display panel.

[0083] In some non-limiting examples, the first opto-electronic component and the second opto-electronic component may be positioned substantially at at least one of an extremity of the display panel, a centre thereof, and a centre of one of a side, and an end, of the display panel.

[0084] In some non-limiting examples, the second opto-electronic component may be arranged in a part of the device that is substantially devoid of the (sub-) pixels of the display panel.

[0085] In some non-limiting examples, at least one of the: first opto-electronic component, and second opto-electronic component, may comprise at least one of a transmitter adapted to emit light, and a receiver adapted to receive light.

[0086] In some non-limiting examples, the second opto-electronic component may be a non under-display component.

[0087] In some non-limiting examples, the second opto-electronic component may be the transmitter.

[0088] In some non-limiting examples, the first opto-electronic component may be an under-display camera.

[0089] In some non-limiting examples, at least a part of at least one transmissive region of at least one of the first signal-exchanging part, and the second signal-exchanging part, may have, deposited thereon, a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon.

[0090] In some non-limiting examples, the at least one transmissive region may comprise a first portion that has a first transmittance, and a second portion that has a second transmittance, the transmittance being at least that of the second transmittance.

[0091] In some non-limiting examples, the patterning coating may be deposited at least in the first portion.

[0092] In some non-limiting examples, the first opto-electronic component may be adapted to generate a first output that contains diffracted information correlated with the first PSF, the second opto-electronic component may be adapted to generate a second output that134864-9652-5787.1Atty. Dkt. No. 114246-0448 contains diffracted information correlated with the second PSF, and the device may comprise a processor adapted to process the first output and the second output to produce a processed output.

[0093] In some non-limiting examples, the processor may be adapted to apply a correction to the: first, and second, output, to generate a first corrected output and a second corrected output.

[0094] In some non-limiting examples, the correction may comprise diffraction correction.

[0095] In some non-limiting examples, the diffraction correction may correct diffraction contained in the output of one of the: first, and second, opto-electronic component using the PSF of the other of the: first, and second, opto-electronic component.

[0096] In some non-limiting examples, the processor may be adapted to produce the processed output by combining the first corrected output and the second corrected output.

[0097] In some non-limiting examples, the processed output may be displayed by the display panel.

[0098] In some non-limiting examples, the processed output may comprise at least one of: an image file, a video file, a 3D image, and a 3D video.

[0099] According to a broad aspect, there is disclosed a display panel comprising: a display part comprising a plurality of emissive regions, a first signal-exchanging part and a second signal-exchanging part, each comprising: a plurality of emissive regions, each corresponding to a (sub-) pixel; and a plurality of transmissive regions that allows light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and nearinfrared (NIR), spectrum to pass therethrough, each transmissive region being disposed between adjacent emissive regions in a lateral aspect of the display panel, wherein: each of the: first, and second, signal-exchanging part, has associated therewith, a point spread function (PSF) comprising: a main, and at least one side, lobe, a layout of the transmissive regions of the first signal-exchanging part is different from a layout of the transmissive regions of the second signal-exchanging part, such that a first PSF associated with the first signal-exchanging part may be different from a second PSF associated with the second signal-exchanging part, in at least one of a(n): distribution, and intensity, of at least one of the: main, and at least one side, lobe.144864-9652-5787.1Atty. Dkt. No. 114246-0448

[0100] In some non-limiting examples, a side-lobe pattern of the first PSF may be substantially devoid of a side lobe that overlaps with a side-lobe pattern of the second PSF.

[0101] In some non-limiting examples, a side-lobe pattern of the first PSF may at least partially overlap with a side-lobe pattern of the second PSF.

[0102] In some non-limiting examples, a first subset of the at least one side lobe of the first PSF may at least partially overlap with one of: all, and a subset, of the side lobes of the second PSF.

[0103] In some non-limiting examples, a second subset of the at least one side lobe of the first PSF may be substantially devoid of a side lobe that overlaps with any side lobe of the second PSF.

[0104] In some non-limiting examples, each side lobe of one of the: first, and the second, PSF, may correspond to and at least partially overlaps with, a side lobe of the other of the: first, and second, PSF.

[0105] In some non-limiting examples, the overlap between the side-lobe pattern of the first PSF and the side-lobe pattern of the second PSF may be one of no more than about: 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0106] In some non-limiting examples, an intensity of the at least one side lobe of the first PSF may differ from an intensity of the at least one side lobe of the second PSF, in at least one of: a profile, and an intensity level.

[0107] In some non-limiting examples, the main lobe of the first PSF may at least partially overlap with a side lobe of the second PSF.

[0108] In some non-limiting examples, a distribution of the main lobe of the first PSF may differ from a distribution of the main lobe of the second PSF.

[0109] In some non-limiting examples, the main lobe of the first PSF may differ from the main lobe of the second PSF, in at least one of: a profile, and an intensity level.

[0110] In some non-limiting examples, the layout of the transmissive regions of each signal-exchanging part may be characterized by at least one of a: size, shape, orientation, and pitch, thereof.

[0111] In some non-limiting examples, at least a part of at least one transmissive region of at least one of the: first, and second, signal-exchanging part, may have deposited154864-9652-5787.1Atty. Dkt. No. 114246-0448 thereon, a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon.

[0112] In some non-limiting examples, the at least one transmissive region may comprise a first portion that has a first transmittance, and a second portion that has a second transmittance, the first transmittance being at least that of the second transmittance.

[0113] In some non-limiting examples, the patterning coating may be deposited at least in the first portion.

[0114] According to a broad aspect, there is disclosed a method for operating an electronic device comprising a display panel, and a first opto-electronic component and a second opto-electronic component, each opto-electronic component being adapted to at least one of: emit, and receive, light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and near-infrared (NIR), spectrum, and generate an output that contains diffracted information correlated with a point spread function (PSF) thereof, wherein: the first opto-electronic component is arranged behind a first signal-exchanging part comprising a plurality of transmissive regions of the display panel, such that a first PSF associated with the first opto-electronic component comprises a component associated with a layout of the transmissive regions of the first signal-exchanging part, and differs from a second PSF associated with the second opto-electronic component, the method comprising actions of: processing a first output of the opto-electronic component and a second output of the opto-electronic component to produce a processed output.

[0115] In some non-limiting examples, the second opto-electronic component may be arranged behind a second signal-exchanging part comprising a plurality of transmissive regions of the display panel, such that a second PSF associated with the second optoelectronic component may comprise a component associated with a layout of the transmissive regions of the second signal-exchanging part.

[0116] In some non-limiting examples, the action of processing may comprise processing the output of one of: the first opto-electronic component and the second optoelectronic component using the PSF of the other of: the first opto-electronic component and the second opto-electronic component.164864-9652-5787.1Atty. Dkt. No. 114246-0448

[0117] In some non-limiting examples, the action of processing may comprise an action of correcting the first output and the second output to generate a first corrected output and a second correct output.

[0118] In some non-limiting examples, the action of correcting may comprise diffraction correction.

[0119] In some non-limiting examples, the diffraction correction may correct diffraction contained in the output of one of the first opto-electronic component and the second opto-electronic component using the PSF of the other of the first opto-electronic component and the second opto-electronic component.

[0120] In some non-limiting examples, the action of correcting may be performed separately for each of the first output and the second output.

[0121] In some non-limiting examples, the action of correcting may be performed by cross-referencing the first output with the second output.

[0122] In some non-limiting examples, the action of processing may comprise an action of combining the first corrected output and the second correct output to generate a combined output.

[0123] In some non-limiting examples, the action of combining may comprises combining the first corrected output and the second corrected output by at least one of a: fusion, and stitching, process.

[0124] In some non-limiting examples, the action of correcting may be preceded by an action of pre-processing the first output and the second output.

[0125] In some non-limiting examples, the action of combining may be followed by an action of post-processing the combined output.

[0126] In some non-limiting examples, the method may comprise an action of displaying the processed output on the display panel.

[0127] In some non-limiting examples, the processed output may comprise at least one of: an image file, a video file, a 3D image, and a 3D video.

[0128] In some non-limiting examples, at least one of the first opto-electronic component, and the second opto-electronic component, may comprise at least one of: a transmitter adapted to emit light, and a receiver adapted to receive light.174864-9652-5787.1Atty. Dkt. No. 114246-0448

[0129] In some non-limiting examples, the second opto-electronic component may be a non under-display component.

[0130] In some non-limiting examples, the second opto-electronic component may be the transmitter.

[0131] In some non-limiting examples, the first opto-electronic component may be an under-display camera.DESCRIPTIONDisplay Panel and User Device

[0132] Turning now to FIG. 1, there is shown a cross-sectional view of an example layered opto-electronic device, in the form of a display panel 100. In some non-limiting examples, the display panel 100 may comprise a plurality of layers deposited on a substrate 10, culminating with an outermost layer that forms a face 101 thereof.

[0133] A lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define a lateral aspect of the device. The longitudinal axis may define a longitudinal aspect of the device.

[0134] The face 101 of the display panel 100 may extend across a lateral aspect thereof, substantially along a plane defined by the lateral axes.

[0135] In some non-limiting examples, the face 101, and indeed, the entire display panel 100, may act as a face of a electronic device 110 through which at least one EM signal 131 may be exchanged therethrough at a non-zero angle relative to the plane of the face 101. In some non-limiting examples, the electronic device 110 may be a user device 110, including without limitation, a computing device 110, including without limitation, a smartphone, a tablet, a laptop, an e-reader, and some other electronic device 110, such as a monitor, a television set, and a smart device 110, including without limitation, an automotive display, windshield, a household appliance, a wearable device, and a medical, commercial, and industrial device 110.

[0136] In some non-limiting examples, the electronic device 110 may comprise at least one opto-electronic component 130 that at least one of emits, and receives, light. In some non-limiting examples, the at least one opto-electronic component 130 may comprise184864-9652-5787.1Atty. Dkt. No. 114246-0448 an under-display component (UDC) 130udisposed under the display panel 100. Although not shown in FIG. 1, in some non-limiting examples, the at least one opto-electronic component 130 may comprise a non under-display component 130n, including without limitation, a punch-hole component 13 On, which at least one of: emits, and receives, light that does not pass through the display panel 100. In some non-limiting examples, the non under-display component 130n may be positioned in a non-display part (not shown) of the display panel 100, which in some non-limiting examples, may be substantially devoid of any emissive regions 210 (FIG. 2). In some non-limiting examples, the non-display part may be in a form of, including without limitation, a cut-out, a notch, and a bezel.

[0137] In some non-limiting examples, the face 101 may correspond to, and in some non-limiting examples, mate with, at least one of: a body 120, and an opening 121 therewithin, within which the at least one under-display component 130umay be housed.

[0138] In some non-limiting examples, the at least one under-display component 130u may be formed, including without limitation, at least one of: integrally, and as an assembled module, with the display panel 100 on a surface thereof opposite to the face 101.

[0139] In some non-limiting examples, at least one aperture 122 may be formed in the display panel 100 to allow for the exchange of at least one EM signal 131 with the at least one under-display component 130uthrough the face 101 of the display panel 100, at a non-zero angle to the plane defined by the lateral axes, including without limitation, concomitantly, the layers of the display panel 100, including without limitation, the face 101 of the display panel 100.

[0140] In some non-limiting examples, the at least one aperture 122 may be understood to comprise one of: absence, and reduction, in at least one of: thickness, and coverage, of a substantially opaque region / coating 305 (FIG. 3) and a substantially reduced transmissivity region / coating otherwise disposed across the display panel 100. In some non-limiting examples, the at least one aperture 122 may be embodied as a transmissive region 112 as described herein. In some non-limiting examples, a boundary of the transmissive region 112 may be defined by the aperture 122.

[0141] However the at least one aperture 122 is embodied, the at least one EM signal 131 may pass therethrough such that it passes through the face 101. As a result, the at least one EM signal 131 may be considered to exclude any EM radiation that may extend194864-9652-5787.1Atty. Dkt. No. 114246-0448 along the plane defined by the lateral axes, including without limitation, any electric current that may be conducted across at least one particle structure 2150 (FIG. 21) laterally across the display panel 100.

[0142] Further, those having ordinary skill in the relevant art will appreciate that the at least one EM signal 131 may be differentiated from EM radiation per se, including without limitation, one of electric current, and an electric field generated thereby, in that the at least one EM signal 131 may convey, either one of alone, and in conjunction with other EM signals 131, some information content, including without limitation, an identifier by which the at least one EM signal 131 may be distinguished from other EM signals 131. In some non-limiting examples, the information content may be conveyed by at least one of specifying, altering, and modulating, at least one of the wavelength, frequency, phase, timing, bandwidth, intensity, time of flight, spatial position, and other characteristic of the at least one EM signal 131.

[0143] In some non-limiting examples, the at least one EM signal 131 exchanged with the at least one opto-electronic component 130, including without limitation, (not) passing through the at least one aperture 122 of the display panel 100, may comprise at least one photon and, in some non-limiting examples, may have a wavelength spectrum that lies, without limitation, within at least one of the: visible, IR, and near-infrared (NIR), spectrum. In some non-limiting examples, the at least one EM signal 131 may have a wavelength that lies, without limitation, within at least one of the: IR, and NIR, spectrum.

[0144] In some non-limiting examples, the at least one EM signal 131 may comprise ambient light incident thereon.

[0145] In some non-limiting examples, the at least one EM signal 131 exchanged through the at least one aperture 122 of the display panel 100 may be at least one of: transmitted, and received, by the at least one under-display component 130u.

[0146] In some non-limiting examples, the at least one under-display component 130umay have a size that is at least a single transmissive region 112, but may underlie not only a plurality thereof, but also at least one emissive region 210 extending therebetween. In some non-limiting examples, the at least one under-display component 130 may have a size that is at least a single one of the at least one aperture 122.204864-9652-5787.1Atty. Dkt. No. 114246-0448

[0147] In some non-limiting examples, the at least one opto-electronic component 130 may comprise a receiver 130r, adapted to receive and process at least one received EM signal 13 lr. In some non-limiting examples, such receiver 130r may comprise a camera, including without limitation, an under-display camera (UDC), including without limitation, an IR camera, and a detector, including without limitation, IR sensor / detector, an NIR sensor / detector, a LIDAR sensing module, a fingerprint sensing module, an optical sensing module, an IR (proximity) sensing module, an iris recognition sensing module, and a facial identification system, including without limitation, a part thereof.

[0148] In some non-limiting examples, the at least one opto-electronic component 130 may comprise a transmitter 130t adapted to emit at least one transmitted EM signal 13 It. In some non-limiting examples, such transmitter 130t may comprise a source of light, including without limitation, a built-in flash, a flashlight, an IR emitter, a NIR emitter, a LIDAR sensing module, a fingerprint sensing module, an optical sensing module, an IR proximity sensing module, an iris recognition sensing module, and a facial identification system, including without limitation, a part thereof, including without limitation, at least one of a: dot-matrix projector, and flood illuminator.

[0149] In some non-limiting examples, the at least one received EM signal 13 lr may include at least a fragment of the at least one transmitted EM signal 13 It which is one of reflected off, and otherwise returned by, a surface, including without limitation, of a user 10, that is external to the user device 110.

[0150] In some non-limiting examples, the at least one EM signal 131 passing through the at least one aperture 122 of the display panel 100 beyond the user device 110, including without limitation, those transmitted EM signals 13 It emitted by the at least one under-display component 130uthat may comprise a transmitter 130t, may emanate from the display panel 100, and pass back as received EM signals 13 lr through the at least one aperture 122 of the display panel 100 to at least one under-display component 130uthat may comprise a receiver 13 Or.

[0151] In some non-limiting examples, the under-display component 130umay comprise an IR emitter and an IR sensor. In some non-limiting examples, such underdisplay component 130umay comprise, as one of a part, component, and module, thereof at least one of a dot-matrix projector, a time-of-flight (ToF) sensor module, which may operate as one of a direct ToF, and an indirect ToF, sensor, a vertical cavity surface-214864-9652-5787.1Atty. Dkt. No. 114246-0448 emitting laser (VCSEL), flood illuminator, NIR imager, folded optics, and a diffractive grating.

[0152] In some non-limiting examples, there may be a plurality of under-display components 130uwithin the user device 110, a first one of which may comprise a transmitter 130t for emitting at least one transmitted EM signal 13 It to pass through the at least one aperture 122, beyond the user device 110, and a second one of which may comprise a receiver 130r, for receiving at least one received EM signal 13 lr. In some nonlimiting examples, such transmitter 130t and receiver 13 Or may be embodied in a single under-display component 130.Signal-Exchanging Part and Display Part

[0153] In some non-limiting examples, the display panel 100 may comprise at least one signal-exchanging part 103 and at least one display part 107.

[0154] In some non-limiting examples, the at least one display part 107 may comprise a plurality of emissive regions 210, in some non-limiting examples, laid out in a lateral pattern. In some non-limiting examples, the emissive regions 210 in the at least one display part 107 may correspond to (sub-) pixels 215 / 216 (FIG. 2) of the display panel 100. In some non-limiting examples, at least one non-emissive region 1911 (FIG. 19) may lie adjacent to each emissive region 210, such that each emissive region 210 may be effectively surrounded by non-emissive region(s) 1911.

[0155] In some non-limiting examples, the at least one signal-exchanging part 103 may comprise at least one emissive region 210 and at least one transmissive region 112. In some non-limiting examples, the at least one emissive region 210 in the at least one signalexchanging part 103 may correspond to (sub-) pixel(s) 215 / 216 of the display panel 100, and in some non-limiting examples, may be substantially laid out in a similar, including without limitation, identical, lateral pattern as in the at least one display part 107.

[0156] In the present disclosure, the term “transmissive region” refers to region(s) of the display panel 100, including without limitation, the at least one transmissive region 112 in the at least one signal-exchanging part 103 thereof, that may be configured to permit an increased fraction of EM radiation, incident upon the display panel 100, to be transmitted therethrough, at least in comparison to another region of the display panel 100 that is not a transmissive region 112, including without limitation, in the at least one display part 107.224864-9652-5787.1Atty. Dkt. No. 114246-0448

[0157] In some non-limiting examples, the at least one display part 107 may be adjacent to, and in some non-limiting examples, separated by, at least one signalexchanging part 103.

[0158] In some non-limiting examples, the at least one signal-exchanging part 103 may be positioned substantially centrally within the lateral aspect of the display panel 100.

[0159] In some non-limiting examples, the at least one display part 107 may substantially surround, including without limitation, in conjunction with at least one other display part 107, the at least one signal-exchanging part 103.

[0160] In some non-limiting examples, the at least one signal-exchanging part 103 may be positioned proximate to an extremity of the display panel 100, including without limitation, at least one of: an edge, and a corner, thereof, and configured such that the at least one display part(s) 107 do(es) not completely surround the at least one signalexchanging part 103.

[0161] Those having ordinary skill in the relevant art will appreciate that there may be scenarios calling for the layout, including without limitation, at least one of a: number, size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of (sub-) pixels 215 / 216 in the signal-exchanging part 103 of the display panel 100 to resemble, to some extent, the layout thereof in the at least one display part 107 of the display panel 100, including without limitation, where the pitch thereof in the at least one signal-exchanging part 103 is one of: the same, and an integer multiple thereof, of a pitch thereof in the at least one display part 107.

[0162] Having said this, examples in the present disclosure may have applicability in some scenarios in which the layout of (sub-) pixels 215 / 216 in the at least one signalexchanging part 103 may be substantially different than the layout thereof in the at least one display part 107 of the display panel 100.

[0163] In some non-limiting examples, a pixel density of the at least one signalexchanging part 103 of the display panel 100 may be no more than a pixel density of the at least one display part 107 of the display panel 100.

[0164] In some non-limiting examples, at least one of a: size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of the (sub-) pixels 215 / 216 in the at least one signal-exchanging part 103 of the display panel 100234864-9652-5787.1Atty. Dkt. No. 114246-0448 may be substantially identical to that of the (sub-) pixels 215 / 216 in the at least one display part 107 of the display panel 100, however a number of such (sub-) pixels 215 / 216 may be reduced in the signal-exchanging part 103 of the display panel 100. In such scenarios, in some non-limiting examples, a common fine metal mask (FMM) may be used for patterning at least the (sub-) pixels 215 / 216 in both the at least one signal-exchanging part 103 and the at least one display part 107, with an attendant reduction of manufacturing cost and complexity. In such scenarios, in some non-limiting examples, those apertures in the FMM corresponding to those (sub-) pixel(s) 215 / 216 that are not present (omitted) in the at least one signal-exchanging part 103 may be covered (blocked) when in use with the at least one signal-exchanging part 103, so as to substantially preclude the formation of such at least one (sub-) pixel(s) 215 / 216. In some non-limiting examples, at least one transmissive region 112 may be formed in region(s) where the formation of such at least one (sub-) pixel(s) 215 / 216 has been substantially precluded in the signal-exchanging part 103.

[0165] In some non-limiting examples, increasing an aperture ratio (for (a part of) the display panel 100) of the at least one transmissive region 112 relative to an aperture ratio (for a corresponding (part of the) display panel 100) of the at least one emissive regions 210, may impose a constraint on an ability to maintain continuity in at least one of: number, size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of (sub-) pixels 215 / 216 across both the at least one signalexchanging part 103 and the at least one display part 107, other than for modifications made to at least one of: number, size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of (sub-) pixels 215 / 216 in the at least one signal-exchanging part 103 to accommodate the introduction of at least one transmissive region 112 in their place. Those having ordinary skill in the relevant art will appreciate that such modifications may technically alter the pitch of the (sub-) pixels 215 / 216 in the at least one signal-exchanging part 103.

[0166] Turning to FIG. 2A, there is shown an example fragment of the at least one display part 107 of the display panel 100. For purposes of illustration, some example pixels 215 are shown in dashed outline. In some non-limiting examples, each pixel 215 comprises four sub-pixels 216, including without limitation, a first sub-pixel 216i, which may, in some non-limiting examples, be a R(ed) sub-pixel 216R, two second sub-pixels 2162, which may,244864-9652-5787.1Atty. Dkt. No. 114246-0448 in some non-limiting examples, be G(reen) sub-pixels 216G, and a third sub-pixel 2163, which may, in some non-limiting examples, be a B(lue) sub-pixel 216B.

[0167] In some non-limiting examples, as shown in FIG. 2B, in an example signalexchanging part 103i, the layout of (sub-) pixels 215 / 216 in the at least one display part 107 shown in FIG. 2A may be replicated, such that the size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of the (sub-) pixels 215 / 216 are the same, except that a subset of the pixels 215 may be omitted and replaced by respective transmissive region(s) 112.

[0168] In some non-limiting examples, as shown in FIG. 2C, in an example signalexchanging part 103n, the layout of (sub-) pixels 215 / 216 in the at least one display part 107 shown in FIG. 2A may be replicated, such that the size (including without limitation, aperture ratio), shape, orientation, (colour) order, configuration, and pitch, of the (sub-) pixels 215 / 216 are the same, except that in at least some of the pixels 215, at least one of the sub-pixels 216 thereof, including without limitation, one of the two second sub-pixels 2162, may be omitted and replaced by respective transmissive region(s) 112.

[0169] While the transmissive regions 112 have been generally illustrated herein as having a clearly defined boundary, which in some non-limiting examples, may be defined by at least one aperture 122 which may be substantially devoid of any at least one of: elements, coatings, and materials that at least one of: are opaque, substantially limit, and prevent, transmission of light incident on an external surface thereof, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples where a region disposed between the emissive regions 210 of the signal-exchanging part 103, including without limitation, the non-emissive region(s) 1911, and a part thereof, is sufficiently transparent, such region may be considered as a transmissive region 112, and accordingly, such transmissive region 112 may not have a clearly defined boundary.

[0170] In some non-limiting examples, the display panel 100 may further comprise at least one transition region (not shown) between the at least one signal-exchanging part 103 and the at least one display part 107, wherein the configuration of at least one of: the emissive regions 210, and the transmissive regions 112 therein, may differ from those of at least one of: the at least one signal-exchanging part 103, and the at least one display part 107. In some non-limiting examples, such transition region may be omitted such that the254864-9652-5787.1Atty. Dkt. No. 114246-0448 emissive regions 210 may be provided in a substantially continuous repeating pattern across both the at least one signal-exchanging part 103 and the at least one display part 107.

[0171] In some non-limiting examples, a pixel density of the at least one emissive region 210 of the at least one signal-exchanging part 103 may be substantially the same as a pixel density of the at least one emissive region 210 of the at least one display part 107 proximate thereto, at least in an area thereof that is substantially proximate to the at least one signal-exchanging part 103. In some non-limiting examples, the pixel density of the display panel 100 may be substantially uniform thereacross. In at least some applications, there may be scenarios calling for the at least one signal-exchanging part 103 and the at least one display part 107 to have substantially the same pixel density, including without limitation, so that a resolution of the display panel 100 may be substantially the same across both the at least one signal-exchanging part 103 and the at least one display part 107 thereof.

[0172] In some non-limiting examples, the at least one signal-exchanging part 103 may have a polygonal contour, including without limitation, at least one of a substantially: square, and rectangular, configuration.

[0173] In some non-limiting examples, the at least one signal-exchanging part 103 may have a curved contour, including without limitation, at least one of a substantially: circular, oval, and elliptical, configuration.

[0174] In some non-limiting examples, the at least one signal-exchanging part 103 may have a reduced number of, including without limitation, be substantially devoid of, backplane components, including without limitation, TFT structures 2206 (FIG. 22), including without limitation, metal trace lines, capacitors, and other light-absorbing element, including without limitation, opaque elements, the presence of which may otherwise interfere with the transmission, and concomitantly, at least one of the: capture, and emission, of the EM signals by the at least one under-display component 130, including without limitation, the capture of an image by a camera.

[0175] In some non-limiting examples, the at least one transmissive region 112 may be achieved by ensuring the absence of material in at least one defining layer 311, 321 (FIG. 3A), including without limitation, deposited material 2431 (FIG. 24) forming a deposited layer 331 (FIG. 3B), of which the second electrode 340 may be comprised, that264864-9652-5787.1Atty. Dkt. No. 114246-0448 substantially reduces transmission of EM radiation therethrough, in at least one wavelength range of the EM spectrum, including without limitation, at least one of (a part of) the: visible, UV, IR, and NIR, spectrum, in regions, in the lateral aspect, corresponding to at least one of the: location, shape, spacing, size, orientation, and position, in the form of at least one boundary 303 (FIG. 3A), of aperture(s) 122 defining it.

[0176] In some non-limiting examples, such defining layers 311, 321 may comprise: at least one of: a layer that may be typically encountered in an opto-electronic device 2100, including without limitation, the substrate 10, at least one layer in the backplane 302 (FIG. 3A), including without limitation, at least one TFT structure 2206, a TFT insulating layer 307 (FIG. 3B), a buffer layer 317 (FIG. 3B), a gate insulating layer 318 (FIG. 3B), an interlayer insulating layer 319 (FIG. 3B), at least one conductive metal line coupled with the at least one TFT structure 2206 (including without limitation, data and scan lines which, in some non-limiting examples, may be formed of at least one of: Cu, and a TCO), and the first electrode 1920 (FIG. 19), and at least one layer in a frontplane 301 (FIG. 3B), including without limitation, the first electrode 1920, the second electrode 340 (FIG. 3D), at least one semiconducting layer 330 (FIG. 3B) therebetween, and a PDL 309 (FIG. 3B), to the extent that such layer substantially reduces transmission of light therethrough in at least a wavelength range of the EM spectrum, including without limitation, at least one of (a part of) the: visible, UV, IR, and NIR, spectrum.

[0177] Those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, the first electrode 1920 of an opto-electronic device 2200 may be considered to form part of the backplane 302 (FIG. 3B), and in some non-limiting examples, the first electrode 1920 of an opto-electronic device 2200 may be considered to form part of the frontplane 301.

[0178] As used herein, the term “substantially reduces transmission of EM radiation therethrough” may generally refer to a reduction, in the transmission of EM radiation therethrough, that is one of about: 99%, 95%, 90%, 80%, 75%, 70%, 60%, 50%, 40%, and 30%.

[0179] In some non-limiting examples, the definition of transmissive regions 112, using at least one defining layer 311, 321 that may be typically encountered in an optoelectronic device 2200, that, to at least some extent, may substantially reduce transmission of EM radiation therethrough in at least a wavelength range off the EM spectrum, including274864-9652-5787.1Atty. Dkt. No. 114246-0448 without limitation, at least one of: the visible spectrum, the UV spectrum, the IR spectrum, the NIR spectrum, and a part thereof, may introduce a “grey zone” in which the ability to substantially reduce transmission of EM radiation of such at least one defining layer 311, 321, is substantially less than 100% and a substantial fraction of the EM radiation may pass through such defining layer(s) 311, 321 beyond the at least one boundary 313, 323 (FIG. 3A) of aperture(s) 312, 322 defining corresponding transmissive regions 112.

[0180] In some non-limiting examples, such defining layers 311, 321 may comprise at least one opaque region / coating 305 that substantially reduces transmission of EM radiation therethrough in at least a wavelength range of the EM spectrum, including without limitation, at least one of (a part of) the: visible, UV, IR, and NIR, spectrum. In some nonlimiting examples, such opaque region / coating 305 may not be typically encountered in an opto-electronic device 2200 but has been introduced for purposes of contributing to the definition of at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112.

[0181] In some non-limiting examples, the use of an opaque region / coating 305 in at least one of the defining layers 311, 312, including without limitation, the first defining layer 311, may reduce a likelihood that at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112 may have reduced definition, including without limitation, having a transition region proximate to the at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112, in which a reduced amount of EM radiation may be transmitted therethrough.

[0182] In some non-limiting examples, the absence of material in aperture(s) 312, 322 in defining layer(s) 311, 321, including without limitation, one of: a layer that may be typically encountered in an opto-electronic device 2200, and an opaque region / coating 305 introduced for purposes of contribution to a definition of at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112, may be achieved by removal of such material, including without limitation, by laser ablation.

[0183] In some non-limiting examples, the absence of such material may be achieved by ensuring that such material fails to be deposited thereon, including without limitation, by depositing a patterning material 2311 (FIG. 23) in a pattern, including without limitation, corresponding to at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112.284864-9652-5787.1Atty. Dkt. No. 114246-0448

[0184] In some non-limiting examples, the action of depositing the patterning material 2311 may make use of a shadow mask 2315 (FIG. 23) such as, without limitation, an FMM, during a vapour deposition process, in which the patterning material 2311 is deposited through at least one aperture 2316 (FIG. 23) in the shadow mask 2315 that corresponds to at least one aperture(s) 312, 322 defining corresponding transmissive region(s) 112.

[0185] However achieved, in some non-limiting examples, the absence of such material may be restricted to the at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112.

[0186] In some non-limiting examples, a deposited layer 331 comprising a deposited material 2431 may be deposited in the frontplane 301, in a lateral pattern comprising at least one frontplane aperture 322, characterized by the absence of a closed coating 2140 (FIG. 21) of the deposited material 2431 therewithin, on an exposed layer surface 11 of an underlying layer 2610.

[0187] In some non-limiting examples, the lateral pattern of the deposited layer 331 may be specified by depositing a patterning coating 310, comprising a patterning material 2311, including without limitation, a nucleation-inhibiting coating (NIC), in a pattern, including without limitation, by interposing a shadow mask 2315 therebetween during the deposition process, prior to the deposition of the deposited material 2431.

[0188] In some non-limiting examples, when the patterning coating 310 comprises an NIC, the pattern of the patterning material 231 Imay substantially correspond to at least one boundary 323 of (frontplane) second layer aperture(s) 322, such that, when the deposited material 2431 is thereafter deposited, the deposited material 2431 tends not to be deposited where the patterning coating 310 has been deposited, and tends to accumulate to form the deposited layer 331 in areas that are substantially devoid of the patterning coating 310.

[0189] In some non-limiting examples, the lateral pattern of the deposited layer 331 may be specified by depositing the deposited material 1231 through apertures of a shadow mask 2315 in a pattern that is substantially the reverse of the lateral pattern of the at least one (frontplane) second layer aperture(s) 322.294864-9652-5787.1Atty. Dkt. No. 114246-0448

[0190] In some non-limiting examples, the lateral pattern of the deposited layer 331 may be specified by depositing the deposited material 2431 and thereafter removing deposited material 2431 corresponding to the at least one (frontplane) second layer aperture(s) 322, including without limitation, by laser ablation.

[0191] As shown in the complementary views of FIGs. 3A-3B, and of FIGs. 3C- 3D, those having ordinary skill in the relevant art will appreciate that at least one boundary 313, 323 of aperture(s) 312, 322 defining corresponding transmissive region(s) 112, may be defined by a geometric intersection, of at least one first layer aperture boundary 313, of first layer aperture(s) 312, in the lateral aspect, of a first defining layer 311, and of at least one overlapping second layer aperture boundary 323, of second layer aperture(s) 322, in the lateral aspect, of a second defining layer 321, wherein each of: the first defining layer 311, and the second defining layer 312, substantially reduce transmission of EM radiation therethrough.

[0192] FIG. 3A is a view of a fragment of the signal-exchanging part 103 shown in plan. FIG. 3B is a complementary cross-sectional view of various layers of the optoelectronic device 2100 across the fragment, including a first defining layer 311 and a second defining layer 321.

[0193] In FIG. 3B, at least one layer, including without limitation, at least one layer in the backplane 302, including without limitation: the buffer layer 317, the gate insulating layer 318, the interlayer insulating layer 319, and the TFT insulating layer 307, are shown disposed on a first side of the substrate 10, including without limitation, an exposed layer surface of the base substrate 315. In some non-limiting examples, at least one layer in the frontplane 301, including without limitation: a PDL 309, and at least one semiconducting layer 330, may be disposed on an exposed layer surface 11 of such layer(s) in the backplane 302.

[0194] As shown in FIGs. 3A and 3C, the first defining layer 311 may have at least one first layer aperture 312 therein, defined by a corresponding first layer aperture boundary 313 and the second defining layer 321 may have at least one second layer aperture 322 therein, defined by a corresponding second layer aperture boundary 323. The geometric intersection of the first layer aperture boundary 313 overlapping with the second layer aperture boundary 323 may result in an aperture boundary 303 defining an aperture 122, including without limitation, as shown in FIG. 3C.304864-9652-5787.1Atty. Dkt. No. 114246-0448

[0195] In some non-limiting examples, a shape of the first layer aperture boundary 313 may be different from a shape of the second layer aperture boundary 323. In some nonlimiting examples, as shown, the first layer aperture boundary 313 may exhibit a first shape, including without limitation, a substantially circular shape as shown. In some non-limiting examples, as shown, the second layer aperture boundary 323 may exhibit a second shape, including without limitation, a substantially rectangular shape as shown. In some nonlimiting examples, at least one of: the first layer aperture boundary 313, and the second layer aperture boundary 323 may exhibit a substantially irregular shape.

[0196] In some non-limiting examples, as shown in FIG. 3A, the first layer aperture boundary 313 may lie entirely within the second layer aperture boundary 323, such that the at least one boundary 303 of aperture(s) 122 may be defined solely by the first layer aperture boundary 313.

[0197] In some non-limiting examples, although not shown, the second layer aperture boundary 323 may lie entirely within the first layer aperture boundary 313, such that the at least one boundary 303 of aperture(s) 122 may be defined solely by the second layer aperture boundary 323.

[0198] In some non-limiting examples, as shown in FIG. 3B, the first defining layer 311 may comprise a layer in the backplane 302. Where the first defining layer 311 is disposed within the backplane 302, the at least one first layer aperture 312 may be a backplane aperture.

[0199] In some non-limiting examples, as shown in FIG. 3D, the first defining layer 311 may comprise a layer in the frontplane 301. Where the first defining layer 311 is disposed within the frontplane 301, the at least one first layer aperture 312 may be a frontplane aperture.

[0200] In some non-limiting examples, as shown in FIG. 3B, the first defining layer 311 may comprise an opaque region / coating 305, including without limitation, disposed on the first side of the substrate 10.

[0201] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the opaque region / coating 305 may be disposed on the exposed layer surface 11 of other layers, including without limitation, at least one of: the base substrate 315 (corresponding to the first side of the substrate 10), at314864-9652-5787.1Atty. Dkt. No. 114246-0448 least one layer in the backplane 302, including without limitation, at least one of: at least one TFT structure 2206, the TFT insulating layer 307, the buffer layer 317, the gate insulating layer 318, the interlayer insulating layer 319, and the first electrode 1920.

[0202] In some non-limiting examples, although not shown, the first defining layer 311 may comprise an opaque region / coating 305 disposed on a second side of the substrate 10, which may be opposite to the first side of the substrate 10 corresponding to the base substrate 315.

[0203] In some non-limiting examples, as shown in FIG. 3D, the first defining layer 311 may comprise an opaque region / coating 305, including without limitation, disposed on an exposed layer surface 11 of the PDL 309.

[0204] Those having ordinary skill in the relevant art will appreciate that, although not shown, in some non-limiting examples, the opaque region / coating 305 may be disposed on the exposed layer surface 11 of other layers of the frontplane 301, including without limitation, at least one of: the first electrode 1920, the second electrode 340, and at least one semiconducting layer 330 therebetween.

[0205] In some non-limiting examples, although not shown, the first defining layer 311 may comprise an existing layer of the frontplane 301, including without limitation, at least one of: the first electrode 1920, the second electrode 340, and at least one semiconducting layer 330 therebetween, and the PDL 309.

[0206] In some non-limiting examples, although not shown, the at least one first layer aperture boundary 313 of first layer aperture(s) 312 may be formed in existing (backplane) first defining layer(s) 311 of the backplane 302 and without depositing an opaque region / coating 305, including without limitation, by relocating, including without limitation, removing, elements of such (backplane) first defining layer(s) 311 that substantially reduce transmission of EM radiation therethrough in at least a wavelength range of the EM spectrum, including without limitation, at least one of (a part of) the: visible, UV, IR, and NIR, spectrum, including without limitation, elements that are at least one of: opaque, and reflective, including without limitation, at least one TFT structure 2206, and at least one conductive metal line coupled with the at least one TFT structure 2206 (including without limitation, data and scan lines).324864-9652-5787.1Atty. Dkt. No. 114246-0448

[0207] In some non-limiting examples, the second defining layer 321 may comprise a layer in the frontplane 301. Where the second defining layer 321 is disposed within the frontplane 301, the second layer aperture 322 may be a frontplane aperture.

[0208] In some non-limiting examples, although not shown, the second defining layer 321 may comprise a layer in the backplane 302. Where the second defining layer 321 is disposed within the backplane 302, the second layer aperture 322 may be a backplane aperture.

[0209] In some non-limiting examples, as shown in FIG. 3B, the second defining layer 321 may comprise a deposited layer 331, of which the second electrode 340 may be comprised.

[0210] In some non-limiting examples, as shown in FIG. 3D, the second defining layer 321 may comprise the second electrode 340.

[0211] In some non-limiting examples, where the first defining layer 311 is disposed within the backplane 302, other mechanisms for patterning the at least one (backplane) first aperture boundary 313 of (backplane) first aperture(s) 312 of the (backplane) first defining layer 311, may be employed, including without limitation, photolithography, chemical etching, and laser ablation.Point Spread Function

[0212] In some non-limiting examples, a point spread function (PSF) of an optical system 420 (FIG. 4A) may be used to study diffraction characteristics of a display panel 100, comprising at least one signal-exchanging part 103 that has at least one opto-electronic component 130, including without limitation, an under-display component 130u, associated therewith, and comprises at least one transmissive region 112, that allows light that is at least one of emitted, and received, by the at least one opto-electronic component 130, to pass through.

[0213] In some non-limiting examples, a PSF associated with an opto-electronic component 130 may comprise a component associated with optics of the opto-electronic component 130. In some non-limiting examples, the PSF associated with the optoelectronic component 130 may comprise a component associated with the at least one transmissive region(s), including without limitation, a layout thereof, of the signalexchanging part, behind which the opto-electronic component 130 is arranged.334864-9652-5787.1Atty. Dkt. No. 114246-0448

[0214] In some non-limiting examples, the PSF associated with an opto-electronic component 130 may be represented as an integrated PSF, which may be determined based, at least partially, on a PSF exhibited by the opto-electronic component 130, a PSF associated with, including without limitation, exhibited by, (a part of) the display panel 100 through which light passes through, including without limitation, the signal-exchanging part 103, and PSF(s) exhibited by any other optical component(s) / layer(s), including without limitation, part(s) thereof, which are in the optical path.

[0215] In some non-limiting examples, a(n) (integrated) PSF associated with an opto-electronic component 130 may be evaluated by a model simulating an optical system 420 formed by the display panel 100.

[0216] In some non-limiting examples where the opto-electronic component is a receiver 130r, including without limitation, at least one of a camera, and a detector, the (integrated) PSF may be measured by providing, at the input of the optical system 420, one of a point source 410 (FIG. 4A) of light, and a reference object, which, in some nonlimiting examples, may be in a form of a point object that may, in some non-limiting examples, comprise well-defined features, at an object plane 402 (FIG. 4A) and providing, at the output of the optical system 420, the opto-electronic component 130, to capture transmitted light at an image plane 404 (FIG. 4A). In some non-limiting examples where the opto-electronic component 130 is a transmitter 130t, the opto-electronic component 130 may be provided at the input, and a receiver 13 Or, including without limitation, a camera, and a photodiode, may be provided at the output to capture the transmitted light.

[0217] In some non-limiting examples, the (integrated) PSF may be derived by analyzing the light pattern that is at least one of recorded on the image plane 404, and received by the receiver 13 Or. Those having ordinary skill in the relevant art will appreciate that the PSF may be measured using various techniques known in the art, including without limitation, the direct imaging method, the pinhole method, and the knife-edge method.

[0218] In some non-limiting examples, the PSF may be represented in a spatial domain as a three-dimensional distribution describing at least one of a shape, a pattern, and an intensity, of the PSF. In some non-limiting examples, the spatial domain representation PSFs may exhibit a central, main lobe, which may be surrounded by at least one side lobe. In some non-limiting examples, the main lobe may represent a main peak of the344864-9652-5787.1Atty. Dkt. No. 114246-0448 distribution, which in some non-limiting examples, may have a(n) (intensity) level that is a (local) maximum.

[0219] In some non-limiting examples, the main lobe may correspond to a 0thorder peak corresponding to an image that is substantially not diffracted.

[0220] In some non-limiting examples, the at least one side lobe may correspond to an / 7thorder peak, contributing to a diffracted image. In some non-limiting examples, characteristics, including without limitation, a number, shape, size, pattern, and intensity of the side lobes may describe a distribution of the side peak(s) relative to the main peak, and in some non-limiting examples, may indicate a presence of diffraction and other optical artifacts, including without limitation, aberration, and scattering. In some non-limiting examples, including without limitation, where the point source 410 is substantially fully coherent, the at least one side lobe may have at least one of the: shape, and size, that is similar, including without limitation, substantially identical, to that of the main lobe.

[0221] In some non-limiting examples, a(n) (intensity) level of the side peaks may reflect an intensity of the side peaks as a fraction of an intensity of the main peaks.

[0222] In some non-limiting examples where blurring of the point source 410 may be restricted without being overly dispersed, a well-defined main lobe may be formed with minor, including without limitation, indiscernible, side lobes, and may indicate at least one of: reduced artifacts, a good resolution, and an increased signal-to-noise ratio (SNR).

[0223] In some non-limiting examples, the PSF may be represented in a frequency domain as an optical transfer function (OTF). In some non-limiting examples, the OTF may be derived by a Fourier transform of the spatial domain SF, which in some non-limiting examples, may be complex- valued. In some non-limiting examples, a magnitude of the OTF may be defined as a modulation transfer function (MTF). In some non-limiting examples, the OTF may provide information on the PSF, including without limitation, frequency response, and phase information. In some non-limiting examples, the OTF may exhibit at least one of a: peak, and valley. In some non-limiting examples, a peak / valley exhibited at a frequency may indicate an ability / limitation, respectively, to resolve at least one of: fine details, and high-frequency information, at such frequency.

[0224] In some non-limiting examples, the (integrated) PSF may be estimated by theoretical modelling. In some non-limiting examples, a mathematical model may be built354864-9652-5787.1Atty. Dkt. No. 114246-0448 to calculate a simulated PSF, based on optical properties of the optical system 420 formed by the display panel 100. Those having ordinary skill in the relevant will appreciate that the PSF may be estimated using various modelling techniques and algorithms in the art, including without limitation, ray tracing, Gaussian models, and Fourier transform models.

[0225] Turning now to FIG. 4A, there is shown an example schematic diagram shown generally at 400aillustrating the transmission, of a wave 401, including without limitation, at least one of: a collimated wave and, a spherical wave, emitted by a source 410 (“emitted EM signal”), including without limitation, a point source, of light at an object plane 402, by an optical system 420, to an image plane 404.

[0226] In some non-limiting examples, the source 410 may comprise a(n) (part of) image on a surface external to the user device 110, including without limitation, a facial surface of the user 10, illuminated by an illuminator, including without limitation, a flashlight, and an IR emitter, including without limitation, at least one of: a flood illuminator for illuminating the surface facilitating detection of the surface, and a dot-matrix projector for projecting a plurality of dots, including without limitation, of (IR) light, including without limitation, in a grid, onto the surface, and building a depth map therefrom. In some non-limiting examples, where the IR emitter is a dot-matrix projector, the illumination of the surface by one of the dots may serve as the point source 410.

[0227] In some non-limiting examples, the source 410 may comprise a device external to the user device 110, including without limitation, an IR emitter, including without limitation, at least one of: a flood illuminator for illuminating the surface facilitating detection of the surface, and a dot-matrix projector for projecting a plurality of dots, including without limitation, of IR light, including without limitation, in a grid, onto the surface and building a depth map therefrom. In some non-limiting examples, where the IR emitter is a dot-matrix projector, one of the dots may serve as the source 410.

[0228] In some non-limiting examples, the image plane 404 may comprise a(n) (part of) image on a surface external to the user device 110, including without limitation, a facial surface of the user 10, captured by a camera, including without limitation, an IR camera.

[0229] In some non-limiting examples, the image plane 404 may be (part of) a device external to the user device 110, including without limitation, a camera, including364864-9652-5787.1Atty. Dkt. No. 114246-0448 without limitation, an IR camera, for capturing an image on a surface external to the user device 100, including without limitation, a facial surface of the user 10.

[0230] In some non-limiting examples, the optical system 420 may comprise at least one signal-exchanging part 103 comprising at least one transmissive region 112 of a display panel 100 of a user device 110 and having an associated PSF. In some non-limiting examples, the associated PSF may comprise components thereof associated with the at least one transmissive region 112, including those related to the layout thereof, including without limitation, at least one of a: size (including without limitation, an aperture ratio), shape, orientation, and pitch, thereof.

[0231] In some non-limiting examples, the image plane 404 may be a focal plane of an opto-electronic component 130, including without limitation, an under-display component 130u, including without limitation, an IR sensor. In some non-limiting examples, an image of the emitted EM signal received at the image plane 404 may be a received version thereof (“received EM signal”).

[0232] In some non-limiting examples, a distance between the object plane 402 and a focal plane 403 of the optical system 420 may be represented by di, while a distance between the focal plane 403 of the optical system 420 and the image plane 404 may be represented by rZ?.

[0233] In some non-limiting examples, a two-dimensional impulse function in the spatial domain of the projection of the source 410 through the optical system 420 onto the object plane 404 may be given by Equation (1): / i(x,y) = f(x,y) © g(x,y) (1) where: / (%, y) is a two-dimensional impulse function in the spatial domain of the source 410; and g(x,y) is the spatial PSF of the optical system 420.

[0234] Accordingly, if the PSF of the optical system 420 is known, (%, y) may be recovered (“recreated EM signal”) from the received EM signal recorded by the optoelectronic component 130, by taking the inverse Fourier transform F(u, v) of f(x, y), by a374864-9652-5787.1Atty. Dkt. No. 114246-0448 deconvolution operation, including without limitation, a Wiener filter, given by Equation (2):where:G(u, v) is the Fourier transform of g(x, y);H(u, v) is the Fourier transform of h(x, y); andCis a noise-related component, including without limitation, at least one of a function, and a constant.

[0235] In some non-limiting examples, the optical system 420 may comprise additional components (not shown) in the optical path, including without limitation, at least one of optical elements (including without limitation, lenses, and prisms), which may be positioned within the user device 110 between at least one of the object plane 402 and the optical system 420, and the optical system 420 and the image plane 404 (including without limitation, as part of the under-display component 130u), and other elements which may introduce distortion, including without limitation, diffraction effects, into the optical system 420, including without limitation, additional components of the display panel 100, including without limitation, electrodes 1920, 340, 2850, TFT structures 2206, particle structures 2150, and overlying layers 2170, thereof.

[0236] Those having ordinary skill in the relevant art will appreciate that the presence of such additional components in the optical path may one of introduce additional focal planes (not shown) to the diagram 400, and alter the effective position of any one of di, and rZ?.

[0237] Those having ordinary skill in the relevant art will appreciate that the PSF of the optical system 420 on the image plane 404 may reflect aspects contributed by any of such additional components in addition to the aspects contributed by the display panel 100, and the at least one transmissive region 112 therethrough.

[0238] In some non-limiting examples, the source of the light incident on the surface may be a component that is not an under-display component 130u, including without limitation, a non under-display component 130n, which does not pass light through a part of384864-9652-5787.1Atty. Dkt. No. 114246-0448 the display panel 100, such that the light incident on the surface may not pass through the optical system 420.

[0239] In some non-limiting examples, the source of the light incident on the surface may be an under-display component 130u, such that the light incident on the surface passes through the optical system 420.

[0240] In some non-limiting examples, the image plane 404 may be part of a component, including without limitation, one of: an external camera and a non underdisplay component 130n, such that the capture of such light may not pass through the optical system 420.

[0241] In some non-limiting examples, the image plane 404 may be an underdisplay component 130u, such that the capture of the light incident on the surface passes through the optical system 420.

[0242] In some non-limiting examples, both the source 410 and the component housing the image plane 404 may be considered to be under-display components 130u, and as shown in FIG. 4B, the optical system 420 may be considered to be comprised of two optical system components 421, 422, each corresponding to a signal-exchanging part 103 comprising at least one transmissive region 112 of a display panel 100 of a user device 110 and having an associated PSF, including without limitation, a common signal-exchanging part 103. In some non-limiting examples, the source 410 may comprise a first optoelectronic component 130i, including without limitation, a transmitter 130t. In some nonlimiting examples, the component housing the image plane 404 may comprise a second opto-electronic component 1302, including without limitation, a detector 130d.

[0243] As used herein, the term “transmitter-side”, unless the context indicates otherwise, may generally ascribe to a term that it modifies, the sense that the term lies along, including without limitation, intersects, an optical path 405t of an EM signal emanating from, including without limitation, transmitted by, the source 410 of a transmitter that is an under-display component 130u, and directed toward, including without limitation, impinging upon, a reflector 406, including without limitation, a surface, including without limitation, of the user 10, that is external to the user device 110.

[0244] As used herein, the term “detector- si de”, unless the context indicates otherwise, may generally ascribe to a term that it modifies, the sense that the term lies394864-9652-5787.1Atty. Dkt. No. 114246-0448 along, including without limitation, intersects, an optical path 405d of an EM signal emanating from the reflector 406, including without limitation, a surface, including without limitation, of the user 10, that is external to the user device 110, and directed toward, including without limitation, impinging upon, the object plane 404 of a detector that is an under-display component 130u.

[0245] In some non-limiting examples, as shown, the first optical system component 421 may be positioned such that the optical path 405t passes therethrough, such that the first optical system component 421 may be considered a transmitter-side optical system component 421.

[0246] In some non-limiting examples, as shown, the second optical system component 422 may be positioned such that the optical path 405d passes therethrough, such that the second optical system component 422 may be considered a detector-side optical system component 422.

[0247] In some non-limiting examples, the first optical system component 421 may be substantially the same as the second optical system component 422, other than the fact that light passes through the at least one transmissive region 112 of a display panel 100 of a user device 110 in the first optical system component 421 in a direction that is opposite to a direction that light passes through the at least one transmissive region 112 of a display panel 100 of a user device 110 in the second optical system component 422.

[0248] In some non-limiting examples, at least one of: the PSF associated with the first optical system component 421, and the PSF associated with the second optical system component 422, may comprise components thereof associated with the corresponding at least one transmissive region 112, including those related to the layout thereof, including without limitation, at least one of a: size (including without limitation, an aperture ratio), shape, orientation, and pitch, thereof.

[0249] In some non-limiting examples, the PSF associated with the first optical system component 421 may be substantially the same as the PSF associated with the second optical system component 422. In some non-limiting examples, the PSF associated with the first optical system component 421 may be different from the PSF associated with the second optical system component 422.404864-9652-5787.1Atty. Dkt. No. 114246-0448

[0250] In some non-limiting examples, a distance between a focal plane 4031 of the first optical system component 421 and a focal plane 4032 of the second optical system component 422 may be represented by dsi + dsr, where dsi is a distance between the focal plane 4031 of the first optical system component 421 and a surface external to the user device 110, including without limitation, the user 10, travelled by the light emitted by the source 410 through the at least one transmissive region 112, and incident on the surface, and <A / -is a distance between the surface external to the user device 110, including without limitation, the user 10, and the focal plane 4032 of the second optical system component 422, travelled by the light reflected off the surface and returning through the at least one transmissive region 112, and received at the image plane 404. In some non-limiting examples, dsi = dsr.

[0251] In some non-limiting examples, light transmitted through a signalexchanging part 103, comprising at least one transmissive region 112, of the display panel 100 having associated therewith at least one opto-electronic component 130, including without limitation, the one disposed behind the panel, may be modulated, including without limitation, interfered with, by each individual optical component in an optical path 405, including without limitation, optics of: the at least one opto-electronic component 130, and the signal-exchanging part 103, including without limitation, at least one of a: size (including without limitation, an aperture ratio), shape, orientation, and pitch, of the at least one transmissive region 112 located therein.

[0252] In some non-limiting examples where the PSFs of each optical component, including without limitation, the opto-electronic component 130, and the signal-exchanging part 103, along the optical path are known, the integrated PSF may be calculated by convolving at least one of: all, and a subset of, the PSFs of these optical components, depending on the accuracy to be achieved.

[0253] In some non-limiting examples where a signal-exchanging part 103 comprises a plurality of emissive regions 210 between which at least one transmissive region 112 may be disposed, at least one of: a layout, including without limitation, at least one of a: number, size (including without limitation, aperture ratio), shape, orientation, (colour) order), configuration, and pitch, of the emissive regions 210 may impact the diffraction pattern imparted on the light transmitted through the signal-exchanging part 103.414864-9652-5787.1Atty. Dkt. No. 114246-0448

[0254] In some non-limiting examples, the PSF may be affected by interaction of the optical components with properties of light, including without limitation, the wavelength spectrum thereof, that is at least one of: emitted, and received, by the optoelectronic component 130 through the display panel 100.

[0255] In some non-limiting examples, at least one of the: measurement, estimation, and calculation, of PSF may take factors, including without limitation, at least one of: system noise (including without limitation, component-related noise and background noise), imaging conditions (including without limitation, lightness and contrast), other optical effects (including without limitation, aberrations and scattering), and human vision perception, into account.

[0256] Turning now to FIG. 5 A, there is shown an experimental set-up shown generally at 500, in which a point source 410, comprising the illumination of a surface 510 by an illumination source 515, is viewed at a receiver 520 through a display panel 100. In the experiment, the surface 510 was a substantially vertical wall and the illumination source 515 was a laser pointer emitting IR light at a wavelength of substantially about 980 nm. The display panel 100 comprised at least one signal-exchanging part 103 comprising at least one transmissive region 112, and was positioned a distance Di substantially about 60 cm away from the wall 510 and oriented such that the laser pointer 515 illuminated the wall 510 without passing therethrough and an optical path 405 between the illuminated wall 510 and the receiver 520 passed through the at least one signal-exchanging part 103. The receiver 520 comprised an IR camera having an objective lens 525 having a diameter DL of substantially about 0.98 cm and a focal length f of substantially about 5.5 cm. The receiver 520 was positioned substantially flush against the display panel 100, such that a distance D2 therebetween was substantially about 0.1 cm.

[0257] FIG. 5B is an image recorded by the receiver 520 that shows a diffraction pattern of the point source 410 on the image plane 404. FIG. 5C shows a plot of normalized intensity profile 535 of the recorded diffraction pattern as a function of a spatial position along line 5-5, along with an intensity profile 545 of a theoretical PSF of a point source without considering a beam distribution, and an intensity profile 555 of a simulated PSF that accounts for a beam distribution, calculated for the experimental set-up of FIG. 5A. FIG. 5D shows a simulated image that reflects the intensity profile 555 of the simulated PSF illustrated in FIG. 5C. In some non-limiting examples, an intensity of the424864-9652-5787.1Atty. Dkt. No. 114246-0448 simulated PSF may be derived by convolving an intensity of the theoretical PSF and a beam distribution of the point source, including without limitation, a Gaussian distribution as used in this calculation.

[0258] In the images of FIGs. 5B and 5D, there are a plurality of lobes, in a form of dots, laid out in an array about a central, main lobe, surrounded by a plurality of side lobes. The main dot may be understood to be a 0thorder dot, which exhibits an intensity and a size that is at least that of the dots surrounding it, which may be understood to be diffracted dots. In some non-limiting examples, a size of the 0thorder dot may substantially correspond to a size of the source 410, and may, in some non-limiting examples, be slightly larger, because of divergence.

[0259] The central lobe may be seen, by comparison to the intensity profiles in FIG. 5C, to correspond to a central peak of the PSF, which exhibits an intensity that is at least that of the side peaks thereof. In some non-limiting examples, the central peak may encompass the 0thorder peak as well as at least one side peak, including without limitation, the 1storder peaks, on either side because of, including without limitation, over saturation, so that a width of the central peak may be substantially equal to a separation between the encompassed side peaks.

[0260] The side lobes may be the result of the light projected by the source 410 passing through the transmissive region(s) 112 of the signal-exchanging part 103 of the panel 100, and interacting with at least one of: at least one boundary defining the transmissive region(s) 112, and a substantially non-transparent element disposed within, including without limitation, across, the transmissive region(s) 112.

[0261] In some non-limiting examples, diffracted dots may have an intensity that may be no more than that of the 0thorder dot corresponding thereto, such that in some nonlimiting examples, an intensity of the side peaks of the PSF corresponding to the diffracted dots may tend to be no more than an intensity of the main peak of the PSF corresponding to the 0thorder dot. In some non-limiting examples, an intensity of side peaks of the PSF corresponding to diffracted dots may tend to decrease in intensity as the order A of diffraction increases so that, without limitation, an intensity of the side peaks corresponding to 2ndorder diffracted dots may tend to be no more than an intensity of the side peaks corresponding to 1storder diffracted dots.434864-9652-5787.1Atty. Dkt. No. 114246-0448

[0262] In some non-limiting examples, the PSF may be evaluated by various geometric metrics, including without limitation, a size, including without limitation, at least one of: a diameter, and an area, of the main lobe, a spacing between the main lobe and the side lobe(s), a spacing between the side lobes, and a distance from the main lobe to a side lobe that has an intensity reaches a threshold value.

[0263] In some non-limiting examples, the PSF may be evaluated by various intensity-related metrics, including without limitation, a(n) (intensity) level of a main peak, a(n) (intensity) level of a side peak at a certain order, and a ratio of a(n) (intensity) level of a main peak to a(n) (intensity) level of a side peak at a certain order.

[0264] In some non-limiting examples, performing a de-convolution calculation using at least one of the: measured, estimated, and calculated, PSF, may reverse the degradation of at least one of: image, and light pattern represented thereby, to produce a corrected, including without limitation, at least one of: re-constructed, and restored, at least one of: image, and light pattern represented thereby.

[0265] In some non-limiting examples, inaccuracy of at least one of the: measured, estimated, and calculated, PSF, may impact an ability to mitigate diffraction effects caused by the display panel 100, and accordingly lead to an amount of at least one of: information distortion, and information loss. In some non-limiting examples, although certain algorithms, including without limitation, algorithms that model different optical effects caused by at least one of the: display panel 100, opto-electronic components 130, and human vision system, may be adopted to compensate for such inaccuracy, there may be challenges in achieving a correction with substantial (visual) fidelity.Diffraction Reduction

[0266] In the present disclosure, as used herein, the adjective “regular”, unless the context indicates otherwise, may generally ascribe to a term that it modifies, the sense of substantial, including without limitation, exact, similarity, including without limitation, symmetry, in an attribute thereof, including without limitation, in location, shape, spacing, size, orientation, and position, of at least one of: the term itself, and a part of to what the term refers, including without limitation, in respect of a pattern thereof.

[0267] In the present disclosure, as used herein, the adjective “irregular”, unless the context indicates otherwise, may generally ascribe to a term that it modifies, the opposite444864-9652-5787.1Atty. Dkt. No. 114246-0448 sense of the adjective “regular”, including the sense of one of a: partial, and complete, absence of regularity in the term.

[0268] In some non-limiting examples, a display panel 100, comprising at least one signal-exchanging part 103 with at least one transmissive region 112, may interfere with the transmission, and concomitantly, the capture, of at least one of: an image, and a light pattern represented by at least one EM signal 131 passing through an aperture of the at least one transmissive region 112, including without limitation, where the at least one transmissive region 112 is shaped to exhibit a distinctive and non-uniform diffraction pattern.

[0269] In some non-limiting examples, such interference may be occasioned by the impact of a diffraction characteristic of the diffraction pattern.

[0270] In some non-limiting examples, interference occasioned by the impact of a diffraction characteristic of the diffraction pattern may tend to reduce SNR, and concomitantly, in the context of a facial identification system, increase a likelihood that at least one diffracted dot associated with a first dot may be mistaken for a second dot, with the result that facial identification may be compromised.

[0271] In some non-limiting examples, a diffraction characteristic may reduce an ability to facilitate mitigating the interference by such diffraction pattern, that is, an ability to permit an under-display component 130uto be able to one of: accurately receive and process such pattern, even with the application of post-processing techniques. In some nonlimiting examples, this may result in at least one of: the dot array projected from an underdisplay emitter being distorted, and the image quality being degraded, due to diffraction effects. In some non-limiting examples, this may result in a reduced fidelity of the information captured by the under-display component 130u, which may interfere with function(s) of the user device 110, which in some non-limiting examples, may rely on the information captured by the under-display component 130u. In some non-limiting examples where the under-display component 130uis an under-display camera, degradation, including without limitation, blur, haze, and flare, may be observed in an image captured by such camera.

[0272] In some non-limiting examples, an extent of interference with the capture of at least one of: an image, and a light pattern represented thereby, caused by the at least one EM signal 131 passing through at least one transmissive region 112 of at least one signal-454864-9652-5787.1Atty. Dkt. No. 114246-0448 exchanging part 103 of a display panel 100 may be characterized by a PSF of such display panel 100.

[0273] Turning now to FIG. 6A, there may be shown, in plan, an example version 110aof the user device 110 according to a non-limiting example, which comprises a display panel 100a. FIG. 6B shows a cross-sectional view of the display panel 100ataken along the line 6B-6B of FIG. 6A.

[0274] In some non-limiting examples, as shown in FIG. 6A, the user device 110amay house a plurality of opto-electronic component 130, at least one of which may be an under-display component 130ushown in dashed outlines. In some non-limiting examples, all the opto-electronic components 130 may be under-display components 130u. In some non-limiting examples, as shown, at least one opto-electronic component 130 may be a non under-display component 130n, including without limitation, a punch-hole camera, and a transmitter. In some non-limiting examples, the non under-display component 130n may be positioned in a non-display part (not shown) of the display panel 100a, which in some nonlimiting examples, may be substantially devoid of any emissive regions 210. In some nonlimiting examples, the non-display part may be in a form of, including without limitation, a cut-out, a notch, and a bezel.

[0275] In some non-limiting examples, the display panel 100amay comprise at least one signal-exchanging part 103, each of which may be associated with at least one underdisplay component 130u. In some non-limiting examples, each under-display component 130umay have a corresponding signal-exchanging part 103 disposed in the optical path. Although not shown, in some non-limiting examples, more than one under-display components 130umay be disposed behind a common signal-exchanging part 103.

[0276] In some non-limiting examples, as shown, at least one opto-electronic component 130 may be positioned near, including without limitation, at, an extremity of the lateral aspect of the user device 110a, including without limitation, at least one of: an edge, and a comer, thereof, such that one opto-electronic component 130 may be spaced apart from other opto-electronic components 130 in the lateral aspect of the user device 110a. In some non-limiting examples, such placement of opto-electronic components 130 with a certain lateral distance may have applicability in some scenarios calling for improved depth perception to support 3D imaging. This may be because each component 130 may capture an image at different non-zero angles, with respect to an object, including without464864-9652-5787.1Atty. Dkt. No. 114246-0448 limitation, the user 10, and accordingly contain different depth information, resulting in a 3D representation with increased details and accuracy. In some non-limiting examples, at least one of the opto-electronic component(s) 130 positioned near, including without limitation, at, an extremity of the user device 110amay be a non under-display component 13 On.

[0277] In some non-limiting examples where at least one of the opto-electronic components 130 is a non under-display component 130n, the non under-display component 13 On may alter the image quality due to a reduced number of layers along the optical path that the light passes through at least one of: before being received, and after being emitted, by the non under-display component 130n, resulting in reduced degradation, including without limitation, diffraction, aberrations, and scattering. In some non-limiting examples, including without limitation, where there are spatial constraints on providing various optoelectronic components 130 with a lateral distance, having at least one opto-electronic component 130 being a non under-display component 130nmay have increased applicability in some scenarios calling for substantial depth imaging.

[0278] In some non-limiting examples, at least one opto-electronic component 130, including without limitation, the opto-electronic component 1303, may be positioned substantially centrally within the lateral aspect of the user device 110a. In some nonlimiting examples, such opto-electronic component 1303 may be an under-display component 130u.

[0279] Those having ordinary skill in the relevant art will appreciate that, the number, type, and location of the opto-electronic components 130 shown in FIG. 6A are solely for illustrative purposes and the examples discussed herein, which should not be considered as limiting, in any fashion, to any of the: number, type, and location, of the optoelectronic components 130, provided that at least one of the opto-electronic components 130 is a under-display component 130u.

[0280] In FIG. 6B, a first opto-electronic components 130i and a second optoelectronic component 1302 may be shown being arranged behind a first signal-exchanging part 103i and a second signal-exchanging part 1032, respectively.

[0281] In some non-limiting examples, at least one of: the first opto-electronic components 130i, and the second opto-electronic component 1302, may be arranged in an474864-9652-5787.1Atty. Dkt. No. 114246-0448 overlapping manner with at least one emissive region 210 each corresponding to a (sub-) pixel 215 / 216, such that light may be at least one of: emitted, and received, by passing through the transmissive region(s) 112 in the signal-exchanging part 103 without compromising the visual content being displayed in the signal-exchanging part 103 of the display panel 100.

[0282] Although not shown, in some non-limiting examples, at least one optoelectronic component 130 may be arranged in a region of the user device 110athat is substantially devoid of the (sub-) pixels 215 / 216 of the display panel 100a.

[0283] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, the image quality may be improved due to an increased amount of light that is at least one of: received, and transmitted, by a plurality of opto-electronic components 130 compared to an amount of light that is at least one of: received, and transmitted, when only one opto-electronic component 130 is used.

[0284] In some non-limiting examples, there may be scenarios calling for a first opto-electronic component 130i to have associated therewith, a first (integrated) PSFi that is different from a second (integrated) PSF2 associated with a second opto-electronic component 1302.

[0285] Without wishing to be bound by any particular theory, it may be postulated that, because the first PSFi associated with the first opto-electronic component 130i is different from the second PSF2 associated with the second opto-electronic component 1302, at least one of the: image, and light pattern, that is one of: emitted, and received, by one of the first opto-electronic component 130i and the second opto-electronic component 1302, may contain different, including without limitation, complementary, diffraction characteristics that may not be present in the other of the first opto-electronic component 130i and the second opto-electronic component 1302. Accordingly, the initial output, including without limitation, at least one of: distortion, and information loss, of one optoelectronic component 130 may be compensated for by the initial output of other optoelectronic component(s).

[0286] Without wishing to be bound by any particular theory, it may now be postulated that, because of the difference between the first PSFi associated with the first opto-electronic component 130i and the second PSF2 associated with the second opto-484864-9652-5787.1Atty. Dkt. No. 114246-0448 electronic component 1302, a diffraction pattern, including without limitation, diffraction characteristics thereof, imparted to one opto-electronic component 130, may be substantially prevented from being amplified by a diffraction pattern, including without limitation, diffraction characteristics thereof, imparted to another opto-electronic component 130 (even if, in some scenarios it may not be necessarily reduced), such that at least one of the: image, and light pattern, may have reduced likelihood of compromise by a certain diffraction mode.

[0287] In some non-limiting examples, an integrated PSF associated with an optoelectronic component 130 may be determined based at least partially on a PSF exhibited by the opto-electronic component 130, a PSF associated with, including without limitation, exhibited by, the corresponding signal-exchanging part 103, and a PSF exhibited by any other component(s) / layer(s), including without limitation, part(s) thereof, in the optical path.

[0288] In some non-limiting examples, a first opto-electronic component 130i may exhibit a first component PSFci, and a second opto-electronic component 1302 may exhibit a second component PSFC2. In some non-limiting examples, the first component PSFci and the second component PSFC2 may be different. In some non-limiting examples, the first component PSFci and the second component PSFC2 may be substantially the same.

[0289] In some non-limiting examples, the first signal-exchanging part 1031 may exhibit a first panel PSFpi, and a signal-exchanging part 1032 may exhibit a second panel PSFP2. In some non-limiting examples, each of the first signal-exchanging part 1031 and the second signal-exchanging part 1032 may be configured such that the first panel PSFpi and the second panel PSFP2 may be different, and accordingly, they may impart different diffraction characteristics onto the respective opto-electronic components 130 associated therewith. In some non-limiting examples, the signal-exchanging parts 1031, 1032 may be configured in a similar, including without limitation, substantially identical, fashion, and, in some non-limiting examples, constitute a single signal-exchanging part 103, such that the first panel PSFpi and the second panels PSFP2 may be substantially the same.

[0290] Accordingly, in some non-limiting examples, at least one of: the first component PSFci and the first panel PSFpi may be different from a corresponding at least one of: the second component PSFC2, and the second panel PSFP2, such that a first integrated494864-9652-5787.1Atty. Dkt. No. 114246-0448PSFii associated with the first opto-electronic component 130i may be different from a second integrated PSF12 associated with the second opto-electronic component 1302.

[0291] In some non-limiting examples, at least one of the: first component PSFci, first panel PSFpi, and first integrated PSFii may exhibit a different distribution, including without limitation, a main-lobe pattern (including without limitation, a size, and a shape, thereof), a main-lobe intensity (including without limitation, an intensity profile and a(n) (intensity) level, thereof), a side-lobe pattern (including without limitation, a number thereof, a size thereof, a shape thereof, a spacing between adjacent side lobes, and a spacing between a side lobe and a main lobe), and side-lobe intensity (including without limitation, an intensity profile and a(n) (intensity) level), from a corresponding at least one of the second component PSFC2, the second panel PSFP2, and the second integrated PSF12, which may concomitantly lead to variations in metrics used to evaluate the PSFs, including without limitation, the geometric metrics, and the intensity-related metrics.

[0292] Turning now to FIGs. 7A-7F, 8A-8F, 9A-9F, and 10A-10F, various nonlimiting examples of interaction between a first PSFi associated with a first opto-electronic component 130i and a second PSF2 associated with a second opto-electronic component 1302 may be schematically illustrated. The first PSFi may represent one of the: first component PSFci, first panel PSFpi, and first integrated PSFii, while the second PSF2 may represent a corresponding one of the: second component PSFC2, second panel PSFP2, and second integrated PSF12.

[0293] In some non-limiting examples, a side-lobe pattern of the first PSFi, including without limitation, at least one of the: first component PSFci, first panel PSFpi, and first integrated PSFii, may not substantially overlap with a side-lobe pattern of the second PSF2, including without limitation, a corresponding at least one of the: second component PSFC2, second panel PSFP2, and second integrated PSFi2.

[0294] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, the information contained in the side lobes may be used to reconstruct more of at least one of the: light, and light pattern, than would be possible with the main lobe alone. Accordingly, a non-overlapping side-lobe pattern of a PSF associated with one opto-electronic component 130 may provide information that may be lost in a PSF associated with other opto-electronic component s) 130, which may contribute to a recovery with increased accuracy.504864-9652-5787.1Atty. Dkt. No. 114246-0448

[0295] FIGs. 7A and 7C schematically illustrate, in plan, a distribution of a first PSF ia, and a second PSF2a, respectively, and FIG. 7E shows the distribution of the first PSF ia, shown in solid outline, superimposed over the distribution of the second PSF2a, shown in dashed outline. FIGs. 7B and 7D schematically illustrate intensity plots of the first PSFia and the second PSF2a thereof taken along line 7A-7A of FIG. 7A and line 7C-7C of FIG. 7C, respectively, and FIG. 7F shows the intensity plot of the first PSFia, shown in solid outline, superimposed over the intensity plot of the second PSF2a, shown in dashed outline.

[0296] In some non-limiting examples, as shown in FIG. 7A, a lobe pattern of the first PSFia may be defined by a first configuration axis 711 and a second configuration axis 712. In some non-limiting examples, the first configuration axis 711 and the second configuration axis 712 may both lie in a lateral plane of the display panel 100 and intersect at a point of intersection. In some non-limiting examples, the first configuration axis 711 may be at a non-zero angle to the second configuration axis 712. In some non-limiting examples, the first configuration axis 711 may be substantially orthogonal to the second configuration axis 712.

[0297] In some non-limiting examples, as shown, a main lobe 720 in the lobe pattern of the first PSFi may be centered, in plan, about the point of intersection of the first configuration axis 711 and the second configuration axis 712. The main lobe 720 may be surrounded by a plurality of, including without limitation, as shown, four, side lobes 730, each of which may be disposed along at least one of the: first configuration axis 711, and second configuration axis 712. In some non-limiting examples, at least two side lobes 730 may be located symmetrically around the main lobe 720, resulting in equal distances from the main lobe 720 along at least one of the: first configuration axis 711, and second configuration axis 712.

[0298] In some non-limiting examples, at least one of a: size, and shape, of the main lobe 720 and of the at least one side lobes 730 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 730 may differ from at least one of: the main lobe 720, and other side lobe(s) 730, in at least one of a: size, and shape.

[0299] In FIG. 7B, there may be shown a main peak 725, corresponding to an intensity of the main lobe 720, and at least one side peak 735, each corresponding to an intensity of a side lobe 730.514864-9652-5787.1Atty. Dkt. No. 114246-0448

[0300] In FIG. 7C, a main lobe 760 in a lobe pattern of a second PSF2a may be centered, in plan, about a point of intersection of a first configuration axis 751 and a second configuration axis 752. In some non-limiting examples, each of the: first configuration axis 751, and second configuration axis 752, may be rotated by a non-zero angle, including without limitation, as shown, substantially 45°, relative to respective ones of the first configuration axis 711 and the second configuration axis 712 of the first PSFia. In some non-limiting examples, the main lobe 760 may be surrounded by a plurality of, including without limitation, as shown, four, side lobes 770, each of which may be disposed along at least one of the: first configuration axis 751, and second configuration axis 752. In some non-limiting examples, at least two side lobes 770 may be located symmetrically around the main lobe 760, resulting in equal distances from the main lobe 760 along at least one of: the first configuration axis 751, and the second configuration axis 752.

[0301] In some non-limiting examples, at least one of a: size, and shape, of the main lobe 760 and of the at least one side lobes 770 may be substantially the same. Although not shown, in some non-limiting examples, at least one of a: size, and shape, of at least one side lobe 770 may differ from at least one of: the main lobe 760, and other side lobe(s) 770 in at least one of a: size, and shape.

[0302] As shown, in some non-limiting examples, the lobe pattern of the second PSF2a, may be substantially similar to that of the first PSFia, in that, relative to the: intersection, and orientation, of the: first configuration axis 751, and second configuration axis 752, the lobe pattern of the second PSF2a is substantially identical to that of the first PSFia.

[0303] As shown, in some non-limiting examples, the lobe pattern of the second PSF2a, may differ from that of the first PSFia, in that the first configuration axis 751 may be rotated by a non-zero angle, including without limitation, substantially 45°, in one of a: clockwise, and counter-clockwise, direction, with respect to the first configuration axis 711, and the second configuration axis 752 may be rotated by the same non-zero angle with respect to the second configuration axis 712, such that the lobe pattern of the second PSF2a is concomitantly rotated by such non-zero angle.

[0304] In FIG. 7D, there may be shown a main peak 765, corresponding to an intensity of the main lobe 760. However, because of the rotation of the lobe pattern of the524864-9652-5787.1Atty. Dkt. No. 114246-0448 second PSF2a by the non-zero angle, the intensity plot of the second PSF2a may be substantially devoid of any side peaks corresponding to an intensity of any side lobes 760.

[0305] As shown, in some non-limiting examples, the intensity plot of the second PSF2a, may be substantially similar to the intensity plot of the first PSFia, in that at least one of the: intensity profile, and (intensity) level of the main peak 765 may be substantially the same as such at least one of the: intensity profile, and (intensity) level of the main peak 725.

[0306] As shown, in some non-limiting examples, the intensity plot of the second PSF2a, may differ from the intensity plot of the first PSFia, in that the intensity plot of the first PSF ia shows at least one side peak 735, each corresponding to an intensity of a side lobe 730, which is not shown in the intensity plot of the second PSF2a.

[0307] In some non-limiting examples, because at least one of the: lobe pattern, and intensity plot of the first PSFia, exhibits a side-lobe profile that is different from a side-lobe profile exhibited by a corresponding at least one of the: lobe pattern, and intensity plot, the side lobes 730 of the first PSFia and the side lobes 770 of the second PSF2a may not substantially overlap, as shown in FIG. 7E, showing, in plan, the lobe pattern of the first PSF ia superimposed over that of the second PSF2a, and FIG. 7F, showing, the intensity profile of the first PSFia superimposed over that of the second PSF2a.

[0308] Those having ordinary skill in the relevant art will appreciate that the lobe patterns of the first PSFia and the second PSF2a are shown being defined by a same number of configuration axes, and each of the configuration axes 751, 752 of the second PSF2a is rotated by a substantially same non-zero angle with respect to the corresponding configuration axis 711, 712 of the first PSFia, solely for illustrative purposes and the example discussed herein, which should not be considered as limiting. In some nonlimiting examples, the lobe patterns of the first PSFia and of the second PSF2a may be defined by a different number of configuration axes. In some non-limiting examples, at least one of the configuration axes 711, 712 of the first PSFia may be parallel to at least one of the configuration axes 751, 752 of the second PSF2a.

[0309] While the intensity profile, and (intensity) level of the main peak 725 of the first PSFia may be shown as being substantially the same as that of the main peak 765 of the second PSF2a for purposes of simplicity of illustration, in some non-limiting examples, the534864-9652-5787.1Atty. Dkt. No. 114246-0448 main peak 725 of the first PSFia may differ from the main peak 765 of the second PSF2a, in at least one of the: intensity profile, and (intensity) level.

[0310] Those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the side lobes 730 of the first PSFia may differ from the side lobes 770 of the second PSF2a in other aspects of the distribution, including without limitation, a lobe pattern, including without limitation, at least one of the: size, shape, number, spacing therebetween, spacing from the respective main lobe, and intensity, including without limitation, at least one of: intensity profile, and intensity level, such that the side-lobe pattern of the first PSFia is substantially devoid of a side lobe that overlaps with the sidelobe pattern of the second PSF2a.

[0311] In some non-limiting examples, a side-lobe pattern of the first PSFi, including without limitation, at least one of the: first component PSFci, first panel PSFpi, and first integrated PSFu, may partially overlap with a side-lobe pattern of the second PSFi, including without limitation, a corresponding at least one of the: second component PSFC2, second panel PSFP2, and second integrated PSF12.

[0312] FIGs. 8A and 8C schematically illustrate, in plan, a distribution of a first PSFib, and a second PSF2b, respectively, and FIG. 8E shows the distribution of the first PSFib, shown in solid outline, superimposed over the distribution of the second PSF2b, shown in dashed outline. FIGs. 8B and 8D schematically illustrate intensity plots of the first PSFib and the second PSF2b thereof taken along line 8A-8A of FIG. 8A and line 8C-8C of FIG. 8C, respectively, and FIG. 8F shows the intensity plot of the first PSFib, shown in solid outline, superimposed over the intensity plot of the second PSF2b, shown in dashed outline.

[0313] In some non-limiting examples, as shown in FIG. 8A, a lobe pattern of the first PSFib may be defined by a configuration axis 811, on which a main lobe 820 may be centered. In some non-limiting examples, the main lobe 820 may be surrounded by a plurality of, including without limitation, as shown, two, side lobes 830, each of which may be disposed along the configuration axis 811. In some non-limiting examples, at least two side lobes 830 may be located symmetrically around the main lobe 820, resulting in equal distances from the main lobe 820 along the configuration axis 811.544864-9652-5787.1Atty. Dkt. No. 114246-0448

[0314] In some non-limiting examples, at least one of a: size, and shape, of the main lobe 820 and of the at least one side lobe 830 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 830 may differ from at least one of: the main lobe 820, and other side lobes 830, in at least one of a: size, and shape.

[0315] In FIG. 8B, there may be shown a main peak 825, corresponding to an intensity of the main lobe 820, and at least one side peak 835, each corresponding to an intensity of a side lobe 830.

[0316] In some non-limiting examples, as shown in FIG. 8C, a lobe pattern of the second PSF2b may be defined by a first configuration axis 851, a second configuration axis 852, a third configuration axis 853, and a fourth configuration axis 854. In some nonlimiting examples, the configuration axes 851 - 854 of the second PSF2b intersect at a point of intersection, about which, a main lobe 860 of the second PSF2b may be centered. In some non-limiting examples, the main lobe 860 may be surrounded by a plurality of, including without limitation, as shown, eight, side lobes 870, each of which may be disposed along at least one of the configuration axes 851 - 854. The side lobes 870 of the second PSF2b may be substantially equally separated by an angle, including without limitation, substantially 45°. In some non-limiting examples, at least two side lobes 870 may be located symmetrically around the main lobe 860, resulting in equal distances from the main lobe 860 along at least one of the configuration axes 851 - 854.

[0317] In some non-limiting examples, as shown, at least one of a: size, and shape, of the at least one side lobe 870 may be substantially the same, and different from that of the main lobe 860. Although not shown, in some non-limiting examples, at least one of a: size, and shape, of the main lobe 860 and of the at least one side lobe 870 may be substantially the same. In some non-limiting examples, at least one side lobe 870 may differ from other side lobe(s) 870, in at least one of a: size, and shape.

[0318] As shown, in some non-limiting examples, the distribution of the second PSF2b may differ from that of the first PSFib in at least one of the following: there are a different number of side lobes 870 in the lobe pattern of the second PSF2b compared to a number of side lobes 830 in the lobe pattern of the first PSFib, the side lobes 870 are separated by a different (acute) angle in the lobe pattern of the second PSF2b compared to that of side lobes 830 in the lobe pattern of the first PSFib (although, every fourth one of the554864-9652-5787.1Atty. Dkt. No. 114246-0448 side lobes 870 is substantially coincident with one of the side lobes 830), and a dimension of the side lobes 870 of the second PSF2b is small compared to a dimension of the side lobes 830 of the first PSFib.

[0319] In FIG. 8D, there may be shown a main peak 865, corresponding to an intensity of the main lobe 860, and at least one side peak 875, each corresponding to an intensity of a side lobe 870.

[0320] As shown, in some non-limiting examples, the intensity plot of the second PSF2b may be substantially similar to the intensity plot of the first PSFib in that a number of peaks 865, 875 shown in the intensity plot of the second PSF2b is substantially the same as a number of peaks 825, 835 shown in the intensity plot of the first PSFib, and the main peak 865 of the second PSF2b is substantially the same as the main peak 825 of the first PSFib, in at least one of the: intensity profile, and (intensity) level.

[0321] As may be seen from shown FIG. 8F, in some non-limiting examples, the intensity plot of the second PSF2b may differ from the intensity plot of the first PSFib, in that at least one of the: intensity profile, and (intensity) level, of the at least one side peak 875 of the second PSF2b may be different from that of the at least one side peak 835 of the first PSFib.

[0322] Those skill having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, a(n) (intensity) level of at least one of the main lobe 820, and of the side lobes 830, of the first PSFib may be one of: lower, and higher, than a(n) (intensity) level of a corresponding at least one of: the main lobe 860, and the side lobes 870, of the second PSF2b. In some non-limiting examples, at least one of the main peak 825, and the side peaks 835, of the first PSFib may be one of: broader, and narrower, than a corresponding at least one of: the main peak 865, and the side peaks 875, of the second PSF2b.

[0323] FIGs. 8A-8F differ from FIGs. 7A-7F in that, the first PSFib and the second PSF2b may exhibit a certain degree of, but short of complete, overlap of side lobes 830, 870, as shown in the plan view of FIG. 8E.

[0324] In some non-limiting examples, a first subset of side lobes 870 of the second PSF2b may overlap with one of: all, and a subset of, side lobes 830 of the first PSFib, while a564864-9652-5787.1Atty. Dkt. No. 114246-0448 second subset of side lobes 870 of the second PSF2b does not substantially overlap with any side lobes 830 of the first PSFib.

[0325] Those having ordinary skill in the relevant art will appreciate that, although a subset of the configuration axes 851 - 854 of the lobe pattern of the second PSF2b are shown substantially coincident with the configuration axis 811 of the lobe pattern of the first PSFib, and accordingly contribute to the partial but not complete overlap of the side lobes 830 of the first PSFib and the side lobes 870 of the second PSF2b, such arrangement is solely for illustrative purposes, which should not be considered as limiting.

[0326] Those having ordinary skill in the relevant will appreciate that, in some nonlimiting examples, the side lobes 830 of the first PSFib may differ from the side lobes 870 of the second PSF2b in other aspects of the distribution, including without limitation, a lobe pattern, including without limitation, at least one of the: size, shape, number, spacing therebetween, spacing from the respective main lobe, and intensity, including without limitation, intensity profile, and intensity level, such that the side lobes 830 of the first PSFib and the side lobes 870 of the second PSF2b exhibit a certain degree of, but short of complete, overlap.

[0327] However the side-lobe pattern is embodied, the first PSFib may differ from the second PSF2b, in intensity, including without limitation, at least one of: an intensity profile, and a(n) (intensity) level, of at least one of the: main lobe, and side lobes.

[0328] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, the variations of at least one of the: main peak, and side peaks, including without limitation, high order side peaks, in at least one of the: intensity profile, and (intensity) level, may provide information that may be used to distinguish individual features, including without limitation, closely spaced features. In some non-limiting examples, the variations in intensities may be reflected in various metrics that may be used to evaluate the PSFs, including without limitation, the geometric metrics, and the intensity-related metrics. In some non-limiting examples, side peaks with different intensities may be weighted differently in evaluation of a PSF, for the purposes of at least one of: enhancing a certain feature, and reducing noise.

[0329] In some non-limiting examples, each side lobe of the first PSFi, including without limitation, at least one of the: first component PSFci, first panel PSFpi, and first574864-9652-5787.1Atty. Dkt. No. 114246-0448 integrated PSFii, may correspond to, and in some non-limiting examples, one of: completely, and partially, overlap with, a side lobe of the second PSF2, including without limitation, a corresponding at least one of the: second component PSFC2, second panel PSFP2, and second integrated PSF12. Despite the correspondence of the side lobes of the first PSFi and the second PSF2, the first PSFi may differ from the side lobes of the second PSF2, in at least one of the: profile and level, of intensity thereof.

[0330] FIGs. 9A and 9C schematically illustrate, in plan, a distribution of a first PSF ic, and a second PSF2c, respectively, and FIG. 9E shows the distribution of the first PSF ic, shown in solid outline, superimposed over the distribution of the second PSF2c, shown in dashed outline. FIGs. 9B and 9D schematically illustrate intensity plots of the first PSFic and the second PSF2c thereof taken along line 9A-9A of FIG. 9A and line 9C-9C of FIG. 9C, respectively, and FIG. 9F shows the intensity plot of the first PSFic, shown in solid outline, superimposed over the intensity plot of the second PSF2c, shown in dashed outline.

[0331] In some non-limiting examples, as shown in FIG. 9A, a lobe pattern of the first PSFic may be defined by a first configuration axis 911, a second configuration axis912, and a third configuration axis 913, which in some non-limiting examples, may lie in a lateral plane of the display panel 100 and intersect at a point of intersection. While the first configuration axis 911, the second configuration axis 912, and the third configuration axis 913 are shown being separated by a substantially identical angle, in some non-limiting examples, each pair of adjacent configuration axes 911 - 913 may form an angle different from other pair(s) of adjacent configuration axes 911 - 913.

[0332] In some non-limiting examples, as shown, a main lobe 920 in the lobe pattern of the first PSFic may be centered, in plan, about the point of intersection of the first configuration axis 911, the second configuration axis 912, and the third configuration axis913. In some non-limiting examples, the main lobe 920 may be surrounded by a plurality of, including without limitation, as shown, six, side lobes 930, each of which may be disposed along at least one of the configuration axes 911 - 913. In some non-limiting examples, at least two side lobes 930 may be located symmetrically around the main lobe 920, resulting in equal distances from the main lobe 920 along at least one of the configuration axes 911 - 913.584864-9652-5787.1Atty. Dkt. No. 114246-0448

[0333] In some non-limiting examples, as shown, the main lobe 920 may differ from at least one side lobe 930, in at least one of a: size, and shape. Although the side lobes 930 may be shown substantially the same in at least one of a: size, and shape, in some nonlimiting examples, at least one side lobe 930 may differ from other side lobe(s) 930, in at least one of a: size, and shape.

[0334] In FIG. 9B, there may be shown a main peak 925, corresponding to an intensity of the main lobe 920, and at least one side peak 935, each corresponding to an intensity of a side lobe 930.

[0335] In FIG. 9C, a lobe pattern of the second PSF2c may be defined by a first configuration axis 951, a second configuration axis 952, and a third configuration axis 953. In some non-limiting examples, the configuration axes 951 - 953 may be substantially coincident with those of the first PSFic. In some non-limiting examples, a main lobe 960 in the lobe pattern of a second PSF2c may be centered, in plan, about the point of intersection of the configuration axes 951 - 953. In some non-limiting examples, the main lobe 650cmay be surrounded by a plurality of, including without limitation, as shown, six, side lobes 970, each of which may be disposed along at least one of the configuration axes 951 - 953. In some non-limiting examples, at least two side lobes 970 may be located symmetrically around the main lobe 960, resulting in equal distances from the main lobe 960 along at least one of the configuration axes 951 - 953.

[0336] In some non-limiting examples, as shown, the main lobe 960 may differ from at least one side lobe 970, in at least one of a: size, and shape. Although the side lobes 970 may be shown substantially the same in at least one of a: size, and shape, in some nonlimiting examples, at least one side lobe 970 may differ from other side lobe(s) 970, in at least one of a: size, and shape.

[0337] As shown, in some non-limiting examples, the distribution of the second PSF2Cmay be substantially similar to the distribution of the first PSFic, in that: the configuration axes 951 - 953 of the second PSF2c are substantially coincident with the configuration axes 911 - 913 of the first PSFic, the main lobe 960 is substantially the same in size, and shape as the main lobe 920, and the side lobes 970 are substantially the same in pattern, and number as the side lobes 930.594864-9652-5787.1Atty. Dkt. No. 114246-0448

[0338] As shown, in some non-limiting examples, the distribution of the second PSF2Cmay differ from the distribution of the first PSFic, in that the side lobes 970 of the second PSF2c are oriented such that a minor axis of each side lobe 970 aligns with the configuration axis on which the side lobe 970 is located, and the side lobes 930 of the second PSFic are oriented such that a major axis of each side lobe 930 aligns with the configuration axis on which the side lobe 930 is located, and the size, including without limitation, a minimum dimension (corresponding to a minor axis thereof), of the side lobes 970 of the second PSF2c is large compared to the size, including without limitation, a minimum dimension, of the side lobes 930 of the first PSFic.

[0339] In FIG. 9D, there may be shown a main peak 965, corresponding to an intensity of the main lobe 960, and at least one side peak 975, each corresponding to an intensity of a side lobe 970.

[0340] As shown, in some non-limiting examples, the intensity plot of the second PSF2C, may be substantially similar to the intensity plot of the first PSFic, in that: a main peak 965 and at least one side peak 975 are shown in the intensity plot of the second PSF2c, and a main peak 925 and at least one side peak 935 are shown in the intensity plot of the first PSFic, and the main lobe 925 and the main lobe 965 are substantially the same in at least one of: intensity profile, and (intensity) level.

[0341] As may be seen from FIG. 9F, in some non-limiting examples, the intensity plot of the second PSF2c may differ from the intensity plot of the first PSFic, in that the intensity profile, and the intensity level of the side peaks 975 of the second PSF2c may be different from those of the side peaks 935 of the first PSFic.

[0342] In some non-limiting examples, a(n) (intensity) level of the side peak 935 of the first PSFic may be one of: lower, and higher, than a(n) (intensity) level of the side peak 975 of the second PSF2c. In some non-limiting examples, the side peaks 935 of the first PSFic may be one of: broader, and narrower, than the side peaks 975 of the second PSF2c.

[0343] FIGs. 9A-9F differ from FIGs. 7A-7F and FIGs. 8A-8F in that, each side lobe 970 of the second PSF2c may correspond to, and in some non-limiting examples, partially overlap with, a side lobe 930 of the first PSFic, as shown in a plan view of FIG. 9E604864-9652-5787.1Atty. Dkt. No. 114246-0448

[0344] Those having ordinary skill in the relevant art will appreciate that, although the configuration axes 911 - 913 of the lobe pattern of the second PSF2c are shown substantially coincident with the configuration axes 951 - 953 of the lobe pattern of the first PSF ic, and accordingly, contribute to the correspondence between the side lobes 930 of the first PSFic and the side lobes 970 of the second PSF2c, such arrangement is solely for illustrative purposes, which should not be considered as limiting. In some non-limiting examples, the configuration axes 951 - 953 of the lobe pattern of the second PSF2c may be rotated by a non-zero angle with respect to the configuration axes 911 - 913 of the lobe pattern of the first PSFic, but still maintain this correspondence.

[0345] Those having ordinary skill in the relevant art will appreciate that, while in some non-limiting examples, the side lobes 930 of the first PSFic may differ from the side lobes 970 of the second PSF2c in other aspects of the distribution, including without limitation, a lobe pattern, including without limitation, the size, shape, number, spacing therebetween, spacing from the respective main lobe, and intensity, including without limitation, intensity profile, and intensity level, the side lobes 970 of the second PSF2c and the side lobes 930 of the first PSFic still exhibit the correspondence.

[0346] In some non-limiting examples, a main lobe of the first PSFi, including without limitation, at least one of the: first component PSFci, first panel PSFpi, and first integrated PSFn, may differ from a main lobe of the second PSF2, including without limitation, a corresponding at least one of the: second component PSFC2, second panel PSFP2, and second integrated PSF12, in at least one of the: profile and level, of intensity thereof.

[0347] FIGs. 10A and 10C schematically illustrate, in plan, a distribution of a first PSFid, and a second PSF2d, respectively, and FIG. 10E shows the distribution of the first PSFid, shown in solid outline, superimposed over the distribution of the second PSF2d, shown in dashed outline. FIGs. 10B and 10D schematically illustrate intensity plots of the first PSFid and the second PSF2d thereof taken along line 10A-10A of FIG. 10A and line 10C- 10C of FIG. 10C, respectively, and FIG. 10F shows the intensity plot of the first PSFid, shown in solid outline, superimposed over the intensity plot of the second PSF2d, shown in dashed outline.

[0348] In FIG. 10A, a lobe pattern of the first PSFid may be defined by a plurality of first configuration axes 1011 and a plurality of second configuration axes 1012. In some614864-9652-5787.1Atty. Dkt. No. 114246-0448 non-limiting examples, the plurality of the first configuration axes 1011 and the plurality of the second configuration axes 1012 may both lie in a lateral plane of the display panel 100 and form a grid pattern. In some non-limiting examples, the first configuration axis 1011 may be substantially orthogonal to the second configuration axis 1012.

[0349] In some non-limiting examples, as shown, a main lobe 1020, and a plurality of, including without limitation, as shown, eight, side lobes 1030 may be positioned on the grid formed by the first configuration axes 1011 and the second configuration axes 1012. In some non-limiting examples, at least two side lobes 1030 may be located symmetrically around the main lobe 1020, resulting in equal distances from the main lobe 1020.

[0350] In some non-limiting examples, at least one of a: size, and shape, of the main lobe 1020 and of the at least one side lobes 1030 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 1030 may differ from at least one of: the main lobe 1020, and other side lobe(s) 1030, in at least one of a: size, and shape.

[0351] In FIG. 10B, there may be shown a main peak 1025, corresponding to an intensity of the main lobe 1020, and at least one side peak 1035, each corresponding to an intensity of a side lobe 1030.

[0352] In FIG. 10C, a lobe pattern of the second PSF2d may be defined by a plurality of first configuration axes 1051, and a plurality of second configuration axes 1052. In some non-limiting examples, the plurality of the first configuration axes 1051 and the plurality of the second configuration axes 1052 of the second PSF2d may be substantially similar to, including without limitation, coincident with, those of the first PSFid, and form a grid pattern. In some non-limiting examples, a main lobe 1060, and a plurality of, including without limitation, as shown, eight, side lobes 1070, may be positioned on the grid formed by the first configuration axes 1051 and the second configuration axes 1052. In some nonlimiting examples, at least two side lobes 1070 may be located symmetrically around the main lobe 1060, resulting in equal distances from the main lobe 1060.

[0353] In some non-limiting examples, at least one of a: size, and shape, of the main lobe 1060 and of the at least one side lobes 1070 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 1070 may differ from at624864-9652-5787.1Atty. Dkt. No. 114246-0448 least one of: the main lobe 1060, and other side lobe(s) 1070, in at least one of a: size, and shape.

[0354] As shown, in some non-limiting examples, the distribution of the second PSF2d may be substantially similar to the distribution of the first PSFid, in that: the configuration axes 1051, 1052 of the second PSF2c are substantially coincident with the configuration axes 1011, 1012, and the lobes 1060, 1070 are substantially the same in number, shape, and pattern as the lobe 1020, 1030.

[0355] As shown, in some non-limiting examples, the distribution of the second PSF2d may differ from the distribution of the first PSFid, in that, the size of the lobes 1060, 1070 of the second PSF2d is small compared to the size of the lobes 1020, 1030 of the first PSFic.

[0356] In FIG. 10D, there may be shown a main peak 1065, corresponding to an intensity of the main lobe 1060, and at least one side peak 1075, each corresponding to an intensity of a side lobe 1070.

[0357] As shown, in some non-limiting examples, the intensity plot of the second PSF2d may be substantially similar to the intensity plot of the first PSFid, in that a main peak 1065 and at least one side peak 1075 are shown in the intensity plot of the second PSF2d, and a main peak 1025 and at least one side peak 1035 are shown in the intensity plot of the first PSFid.

[0358] As may be seen from FIG. 10F, in some non-limiting examples, the intensity plot of the second PSF2d may differ from the intensity plot of the first PSFid in that an intensity profile, and an intensity level of at least one of the: main peaks 1065, and side peaks 1075, of the second PSF2d may be different from those of corresponding at least one of the: main peak 1025, and side peaks 1035 of the first PSFid.

[0359] In some non-limiting examples, a(n) (intensity) level of at least one of: the main peak 1025, and at least one side peak 1035, of the first PSFid may be one of: lower, and higher, than a(n) (intensity) level of corresponding at least one of: the main peak 1065, and at least one side peak 1075, of the second PSF2d. In some non-limiting examples, at least one of: the main peak 1025, and at least one side peak 1035, of the first PSFid may be634864-9652-5787.1Atty. Dkt. No. 114246-0448 one of: broader, and narrower, than corresponding at least one of: the main peak 1065, and at least one side peak 1075, of the second PSF2d.

[0360] FIG. 10A-10F differs from FIG. 7A-7F, FIG. 8A-8F, and FIG. 9A-9F, in that: the main lobe 1020 in the distribution of the first PSFid is different from the main lobe 1060 in the distribution of the second PSF2d, as shown in FIG. 10E, and the main peak 1025 of the first PSFid is different from the main peak 1065 of the second PSF2d, as shown in a intensity plot of FIG. 10F.

[0361] Although the side lobes 1030 in the distribution of the first PSFid may be shown as corresponding to and substantially overlapping with the side lobes 1070 in the distribution of the second PSF2d, in some non-limiting examples, the side lobes 1030 of the first PSFid may have one of: substantially no, and partial overlap with the side lobes 1070 of the second PSF2d. Those having ordinary skill in the relevant art will appreciate that various lobe features described in relation to FIGs. 7A-7F, 8A-8F, 9A-9F, and FIG. 10A-10F may be applicable to one another.

[0362] In some non-limiting examples, an overlap in the side-lobe pattern of the first PSFi, and the side-lobe pattern of the PSF2, may be one of no more than about: 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0363] Although not shown, in some non-limiting examples, a main lobe of at least one of: the first PSFi and the second PSF2, may overlap with at least one side lobe of the at least one of: the first PSFi and the second PSF2.

[0364] Although not shown, in some non-limiting examples, a main lobe of one of: the first PSFi and the second PSF2, may overlap with at least one side lobe of the other one of: the first PSFi and the second PSF2.

[0365] In some non-limiting examples, the PSF associated with (a signalexchanging part 103) of the display panel 100 may comprise components related to the transmissive regions 112, including without limitation, a layout of the apertures defining the transmissive regions 112 in plan, including without limitation, at least one of a: number, size (including without limitation, an aperture ratio), shape, orientation, and pitch, thereof.

[0366] In some non-limiting examples, the first signal-exchanging part 1031 may comprise a plurality of first transmissive regions 112i configured differently from a plurality of second transmissive regions 1122 of the second signal-exchanging part 1032,644864-9652-5787.1Atty. Dkt. No. 114246-0448 such that the first panel PSFpi of the first signal-exchanging part 1031 may be different from the second panel PSFP2 of the second signal-exchanging part 1032, and accordingly, the first signal-exchanging part 1031 and the second signal-exchanging part 1032 may impart different diffraction characteristics onto at least one of the image, and light pattern, that is one of emitted, and received, by the opto-electronic components 130i and 1302, respectively.

[0367] In some non-limiting examples, a configuration of the plurality of first transmissive regions 112i in the first signal-exchanging part 1031 may be different from a configuration of the plurality of second transmissive regions 1122 in the second signalexchanging part 1032.

[0368] Turning now to FIGs. 11A-11E, there may be shown at least a fragment 103a-103eof various example signal-exchanging parts of a display panel 100.

[0369] In FIG. 11 A, a signal-exchanging part 103amay comprise a plurality of transmissive regions 112 that may be aligned in at least one of a row 1111, and column 1112. In some non-limiting examples, the transmissive regions 112 may be aligned in parallel at least one of rows 1111, and columns 1112. In some non-limiting examples, the transmissive region 112 may be positioned on a grid 1113 formed by the rows 1111 and columns 1112.

[0370] In FIG. 11B, a signal-exchanging part 103b may comprise a plurality of transmissive regions 112 that may be arranged along a plurality of, including without limitation, four, configuration axes 1121, 1122, 1123 and 1124, that intersect at a point of intersection. In some non-limiting examples, at least one transmissive region 112 may be disposed at the point of intersection.

[0371] In FIG. 11C, a signal-exchanging part 103cmay comprise a plurality of transmissive regions 112, which may be arranged in a polygonal, including without limitation, pentagonal, configuration. In some non-limiting examples, at least one of the transmissive regions 112 may be aligned along a plurality of sides 1131-1135 of a polygon defined by the configuration. In some non-limiting examples, each vertex of the polygon may correspond to a transmissive region 112. In some non-limiting examples, at least one transmissive region 112 may be located within the polygon, including without limitation, at a center thereof. While a regular pentagonal configuration is shown, those having ordinary654864-9652-5787.1Atty. Dkt. No. 114246-0448 skill in the relevant art will appreciate that other polygonal configurations, whether regular or irregular, including without limitation, triangular, square, rectangular, parallelogram and hexagonal, may be applicable.

[0372] In FIG. 11D, a signal-exchanging part 103d may comprise a plurality of transmissive regions 112, which may be arranged in an elliptical, including without limitation, circular configuration. In some non-limiting examples, the transmissive regions 112 may be equally spaced on a perimeter 1141 of the ellipse defined by the configuration. In some non-limiting examples, at least one transmissive region 112 may be located within the ellipse, and in some non-limiting examples, substantially at a center thereof. In some non-limiting examples, the transmissive regions 112 may be arranged along respective perimeters of a plurality of concentric circles.

[0373] In some non-limiting examples, as shown in FIGs. 11A-11D, the transmissive regions 112 may be arranged in a configuration exhibiting a substantial degree of periodicity. Although not shown, in some non-limiting examples, the transmissive regions 112 may be arranged in a substantially non-periodic, including without limitation, random, and pseudo-random, configuration.

[0374] In FIG. HE, a signal-exchanging part 103emay comprise a plurality of transmissive regions 112, which may be arranged in a substantially non-periodic configuration. In some non-limiting examples, the transmissive regions 112 may be spaced apart a varying distance. In some non-limiting examples, the transmissive regions 112 may be positioned on a grid 1113 with one of a random, and pseudo-random, placement.

[0375] In some non-limiting examples, a pitch of a plurality of transmissive regions 112i in the first signal-exchanging part 1031 may be different from a pitch of a plurality of transmissive regions 1122 in the second signal-exchanging part 1032. In some non-limiting examples, a pitch of transmissive regions 112 may be measured by a spacing between adjacent transmissive regions 112.

[0376] Turning now to FIG. 12A, there is shown, in plan, at least a fragment 103 if of the first signal-exchanging part 1031, and a fragment 1032f of the second signalexchanging part 1032 of the display panel 100. As shown, in some non-limiting examples, the first transmissive regions 112i of the first signal-exchanging part 103 if and the second transmissive regions 1122 of the second signal-exchanging part 1032f may be arranged in an664864-9652-5787.1Atty. Dkt. No. 114246-0448 array configuration in a similar fashion to FIG. 11 A, except the transmissive regions 112 in FIG. 12A have a substantially square shape.

[0377] As shown, in some non-limiting examples, the first transmissive regions 112i may have a first pitch dia along a first direction 1201, and a second pitch c a along a second direction 1202, which in some non-limiting examples, may intersect with the first direction 1201 at a non-zero angle, including without limitation, substantially 90°. In some nonlimiting examples, the first pitch dia and the second pitchof the first transmissive regions 112i may be substantially the same. In some non-limiting examples, the first pitch dia and the second pitch d2a of the first transmissive regions 112i may be different.

[0378] In some non-limiting examples, the configuration of the plurality of the second transmissive regions 1122 may be similar to that of the plurality of the first transmissive region 112i, and have a first pitch dib along the first direction 1201, and a second pitch d2b along the second direction 1202. In some non-limiting examples, the first pitch dib and the second pitch d2b of the second transmissive regions 1122 may be substantially the same. In some non-limiting examples, the first pitch dib and the second pitch d2b of the second transmissive regions 1122 may be different.

[0379] In some non-limiting examples, a pitch along one direction, including without limitation, the first pitch dia, of the first transmissive region 112i may be different from a pitch along such direction, including without limitation, the first pitch dib, of the second transmissive region 1122. In some non-limiting examples, a pitch along one direction, including without limitation, the first pitch dia, of the first transmissive region 112i may be one of an integer, and non-integer, multiple of a pitch along such direction, including without limitation, the first pitch dib, of the second transmissive region 1122. In some non-limiting examples, while the first transmissive region 112i and the second transmissive region 1122 may have a different pitch along one direction, they may have one of the: same, and different, pitch along another direction.

[0380] Turning now to FIG. 12B, there is shown, in plan, at least a fragment 103 igof the first signal-exchanging part 1031, and a fragment 1032g of the second signalexchanging part 1032 of the display panel 100.

[0381] The signal-exchanging part 103 of FIG. 12B may differ from that of FIG. 12A in that the transmissive regions 1121, 1122 may be arranged in an elliptical, including674864-9652-5787.1Atty. Dkt. No. 114246-0448 without limitation, circular, configuration in a similar fashion to FIG. 11B (except the transmissive regions 112 in FIG. 12B have a substantially square shape), such that the transmissive regions 112 have a first pitch die, did along a first, including without limitation, radial, direction, and a second pitch ?c, d2d along a second, including without limitation, circumferential, direction.

[0382] In some non-limiting examples, a pitch along one direction, including without limitation, the first pitch die, of the first transmissive region 1121 may be different from a pitch along such direction, including without limitation, the first pitch did, of the second transmissive region 1122. In some non-limiting examples, a pitch along one direction, including without limitation, the first pitch die, of the first transmissive region 112i may be one of an integer, and non-integer, multiple of a pitch along such direction, including without limitation, the first pitch did, of the second transmissive region 1122. In some non-limiting examples, while the first transmissive region 112i and the second transmissive regions 1122 may have a different pitch along one direction, they may have one of the: same, and different, pitch, along another direction.

[0383] Although not shown, in some non-limiting examples, the transmissive regions 112 of at least one of the first signal-exchanging part 1031 and the second signalexchanging part 1032 may have a pitch that is varied along one direction.

[0384] The transmissive regions 112 of the first signal-exchanging part 1031 and the second signal-exchanging part 1032 are shown, in each fragment 103 if, 3032f, having a substantially square shape arranged in an array configuration in FIG. 12A, and in each fragment 103 ig, 1032g, having a substantially square shape arranged in a circular configuration in FIG. 12B, and having a substantially uniform size solely for illustrative purposes and the examples discussed herein, which should not be considered as limiting, in any fashion, any of the size, shape, configuration, and orientation of the transmissive regions 112 in either the first signal-exchanging part 1031 or the second signal-exchanging part 1032.

[0385] In some non-limiting examples, a size, including without limitation, at least one of a length, width, diameter, perimeter, area, and an aperture ratio, of at least one of the first transmissive regions 112i in the first signal-exchanging part 1031 may be different from that of at least one of second transmissive regions 1122 in the second signalexchanging part 3032.684864-9652-5787.1Atty. Dkt. No. 114246-0448

[0386] Turning now to FIG. 13, there is shown, in plan, at least a fragment 103ih of the first signal-exchanging part 1031, and a fragment 1032h of the second signal-exchanging part 1032 of the display panel 100. As shown, in some non-limiting examples, the first transmissive regions 112i of the first signal-exchanging part 103 ih and the second transmissive regions 1122 of the second signal-exchanging part 1032h may be arranged in an array configuration in a similar fashion to FIG. 12A, except the transmissive regions 112 in FIG. 13 have a rounded rectangular shape.

[0387] As shown, in some non-limiting examples, the first transmissive regions 112i may have a width wi along the first direction 1201, and a height hi along the second direction 1202, and the second transmissive regions 1122 may have a width 11’2 along the first direction 1201 that is different from width wi, and a height hi along the second direction 1202 that is different from the height hi.

[0388] Although not shown, in some non-limiting examples, a dimension along one direction of the first transmissive regions 112i may be different from a dimension along such direction of the second transmissive region 1122, while a dimension along other direction of the first transmissive regions 112i may be the same as a dimension along such other direction of the second transmissive region 1122.

[0389] The transmissive regions 112 of the first exchanging part 1031 and the second exchanging part 1032 are shown, in each fragment 103ih, 1032h, having an array configuration in FIG. 13, and a substantially uniform shape solely for illustrative purposes and the examples discussed herein, which should not be considered as limiting, in any fashion, any of the shape, pitch, configuration, and orientation of the transmissive regions in either the first signal-exchanging part 1031 or the second signal-exchanging part 1032.

[0390] In some non-limiting examples, a size, including without limitation, an aperture ratio, of the transmissive regions 112 in the at least one signal-exchanging part 103, may be varied, including without limitation, one of: such that all of the transmissive regions 112 have a common size, and such that at least one of the transmissive regions 112 has a size that is different than that of another one of the transmissive regions 112.

[0391] In some non-limiting examples, an orientation of at least one of the first transmissive regions 112i in the first signal-exchanging part 1031 may be different from an694864-9652-5787.1Atty. Dkt. No. 114246-0448 orientation of at least one of second transmissive regions 1122 in the second signalexchanging part 1032.

[0392] Turning now to FIG. 14, there is shown, in plan, at least a fragment 103n of the first signal-exchanging part 1031, and a fragment 10321 of the second signal-exchanging part 1032 of the display panel 100. As shown, in some non-limiting examples, the first transmissive regions 112i of the first signal-exchanging part 103 H and the second transmissive regions 1122 of the second signal-exchanging part 10321 may be arranged in an array configuration in a similar fashion to FIG. 12A, except the transmissive regions 112 in FIG. 14 have an elliptical shape.

[0393] As shown, each first transmissive region 112i in the first signal-exchanging part 10311 may be oriented such that a major axis thereof may be aligned along the second direction 1202, while each second transmissive region 1122 in the second signal-exchanging part 10321 may be oriented such that a major axis thereof may be aligned along the first direction 1201.

[0394] In some non-limiting examples, a major axis of each first transmissive region 112i may intersect with at least one of the first direction 1201, and the second direction 1202, at an angle that is different from an angle at which the major axis of each second transmissive region 1122 intersects with such at least one of the first direction 1201, and the second direction 1202.

[0395] The transmissive regions 112 of the first signal-exchanging part 1031 and the second signal-exchanging part 1032 are shown, in each fragment 103 ii, 10321, having an array configuration in FIG. 14, and a substantially uniform size solely for illustrative purposes and the examples discussed herein, which should not be considered as limiting, in any fashion, any of the shape, size, pitch, and configuration of the transmissive regions in either the first signal-exchanging part 1031 or the second signal-exchanging part 1032.

[0396] In some non-limiting examples, an orientation of the transmissive regions 112 relative to an axis of the at least one signal-exchanging part 103 may be varied, including without limitation, one of: such that all of the transmissive regions 112 are oriented in a common direction, and such that at least one of the transmissive regions 112 is oriented in a direction that is different than that of another one of the transmissive regions 112.704864-9652-5787.1Atty. Dkt. No. 114246-0448

[0397] In some non-limiting examples, a shape of at least one of the first transmissive regions 112i in the first exchanging part 1031 may be different from a shape of at least one of second transmissive regions 1122 in the second signal-exchanging part 1032.

[0398] Turning now to FIG. 15, there is shown, in plan, at least a fragment 103 ij of the first signal-exchanging part 1031, and a fragment 1032j of the second signal-exchanging part 1032 of the display panel 100. As shown, in some non-limiting examples, the first transmissive regions 112i of the first signal-exchanging part 103 ij and the second transmissive regions 1122 of the second signal-exchanging part 1032j may be arranged in an array configuration in a similar fashion to FIG. 12A.

[0399] In some non-limiting examples, the first transmissive regions 112i may be shown as having a first shape, including without limitation, a rounded square shape, that is different from a second shape of the second transmissive regions 1122, including without limitation, a star shape. In some non-limiting examples, the first shape may have a different area from the second shape. In some non-limiting examples, the first shape may have a substantially same area as the second shape.

[0400] The transmissive regions 112 of the first signal-exchanging part 1031 and the second signal-exchanging part 1032 are shown, in each fragment 103 ij, 1032j, having an array configuration in FIG. 15, and a substantially uniform pitch solely for illustrative purposes and the examples discussed herein, which should not be considered as limiting, in any fashion, any of the size, pitch, orientation, and configuration of the transmissive regions in either the first signal-exchanging part 1031 or the second signal-exchanging part 1032.

[0401] In some non-limiting examples, a shape of the transmissive regions 112 in the at least one signal-exchanging part 103, including without limitation, a substantially regular shape, including without limitation, one of: substantially polygonal (including without limitation, one of: substantially quadrilateral (including without limitation, substantially rectangular (including without limitation, substantially square)), and substantially triangular), and substantially elliptical (including without limitation, substantially circular), may be varied, including without limitation, one of: such that all of the transmissive regions 112 have a common shape, and such that at least one of the transmissive regions 112 has a shape that is different than that of another one of the transmissive regions 112.714864-9652-5787.1Atty. Dkt. No. 114246-0448

[0402] In the present disclosure, the term “polygonal” may refer generally to at least one of: shapes, figures, closed boundaries, and perimeters, formed by a finite number of linear segments and the term “non-polygonal” may refer generally to at least one of: shapes, figures, closed boundaries, and perimeters, that are not polygonal. In some non-limiting examples, a closed boundary formed by a finite number of linear segments and at least one non-linear (curved) segment may be considered non-polygonal.

[0403] Without wishing to be bound by any specific theory, it may be postulated that display panels 100 having closed boundaries of transmissive regions 112 defined by a corresponding transmissive region 112, that are substantially regular in shape, may exhibit a distinctive and non-uniform diffraction pattern that may adversely impact an ability to facilitate mitigation of interference caused by the diffraction pattern, relative to a display panel 100 having closed boundaries of transmissive regions 112 defined by a corresponding transmissive region 112 that is non-polygonal.

[0404] Without wishing to be bound by a particular theory, it may be postulated that when a closed boundary of a transmissive region 112 defined by a corresponding transmissive region 112 comprises at least one non-linear (curved) segment, EM signals incident thereon and transmitted therethrough may exhibit a less distinctive (more uniform) diffraction pattern that facilitates mitigation of interference caused by the diffraction pattern.

[0405] In some non-limiting examples, a display panel 100 having a closed boundary of the transmissive regions 112 defined by a corresponding transmissive region 112 that is substantially elliptical, including without limitation, circular may further facilitate mitigation of interference caused by the diffraction pattern.

[0406] In some non-limiting examples, a transmissive region 112 may be defined by a finite plurality of convex rounded segments. In some non-limiting examples, at least some of these segments coincide at a concave notch (peak).

[0407] In some non-limiting examples, one of: all, and at least one, of the vertices of at least one of the transmissive regions 112 having a substantially polygonal shape may have substantially rounded corners.

[0408] In some non-limiting examples where there may be constraints on at least one of: an aperture ratio of the at least one transmissive region 112, and an aperture ratio of724864-9652-5787.1Atty. Dkt. No. 114246-0448 the at lest one emissive region 210 within the at least one signal-exchanging part 103, the at least one transmissive region 112 may be provided with a substantially irregular shape, so as to facilitate increasing at least one of: an aperture ratio of the at least one transmissive region 112, and an aperture ratio of the at least one emissive region 210, within the at least one signal-exchanging part 103.

[0409] In some non-limiting examples, at least one of: controlling, modulating and tuning, a(n) (integrated) PSF associated with an opto-electronic component 130, including without limitation, a PSF of the optics of the opto-electronic component 130, and a PSF of a signal-exchanging part 103 behind which the opto-electronic component 130 may be arranged, may impact a diffraction pattern of at least one of: an image, and a light pattern represented thereby, and an ability to facilitate mitigating interference by such diffraction pattern, that is, to permit the opto-electronic component 130 to be able to one of: accurately receive and process such pattern, including without limitation, with the application of processing techniques, including without limitation, imaging processing, and optical processing, and to allow a viewer of such pattern through such display panel 100 to discern information contained therein.

[0410] In some non-limiting examples, the PSF may be modulated to some extent by judicious selection of at least one of: opto-electronic components 130, and a layout (including without limitation, a size, shape, pitch, orientation, configuration, and pattern) of the transmissive regions 112.

[0411] A series of experiments was designed to investigate aspects of the PSF of an optical system 420 comprising the at least one signal-exchanging part 103 that comprises at least one transmissive region 112, and the impact of various layouts (including without limitation, a size (including without limitation, aperture ratio), shape, orientation, and pitch) of the at least one transmissive region 112 in the at least one signal-exchanging part 103 thereon.

[0412] Those having ordinary skill in the relevant art will appreciate that the sample coupons are substantially comprised of an opaque film with apertures corresponding to a plurality of transmissive regions 112 therein. The sample coupons are intended to mimic the position of the transmissive regions 112 in at least one signal-exchanging part 103 of a display panel 100, in which the transmissive regions 112 are interspersed among the at least one (sub-) pixels 215 / 216. However, the sample coupons used in the experimental set-up734864-9652-5787.1Atty. Dkt. No. 114246-0448 are substantially devoid of any emissive regions 210 corresponding to (sub-) pixels 215 / 216.

[0413] The particulars of the layout of the transmissive regions 112 used in the sample coupons herein are set out in Table 1 below:Table 1744864-9652-5787.1Atty. Dkt. No. 114246-0448754864-9652-5787.1Atty. Dkt. No. 114246-0448

[0414] For purposes of illustration only, in FIGs. 16A-16JJ, the location of the transmissive regions 112 in the sample coupons, are shown interspersed among a plurality of (sub-) pixels 215 / 216, so that the position of the at least one transmissive region 112 in the sample coupons may be seen relative to the positions of the (sub-) pixels 215 / 216.

[0415] In the experiments, the diffraction pattern was measured for each sample coupon, using the experimental set-up of FIG. 5A, by projecting a point source 410, in the form of a laser pointer emitting light at substantially about 980 nm through the sample coupon at a distance Di of substantially about 60 cm and recording the image with an IR camera.

[0416] FIG. 17 shows the recorded images for each sample coupon. As may be seen, each sample coupon produced a unique PSF distribution. Those having ordinary skills in the relevant art may appreciate that various combinations of PSFs derived from different layouts of the signal-exchanging parts 103, including without limitation, the layouts of the transmissive region 112, may lead to varying degrees of overlap, including without limitation, at least one of: partial, complete, and substantially no, overlap of at least one of the: main lobe, and side lobe(s), between the first PSF and the second PSF.

[0417] In some non-limiting examples, as shown in FIG. 18A, a distribution of a first PSF exhibited by Sample Coupon A3 and a distribution of a second PSF exhibited by Sample Coupon A5 were reproduced in a simplified representation shown in the plan view 18aiand 18a2, respectively. The side lobes 1812aof the first PSF and the side lobes 1822aof the second PSF may not substantially overlap, as shown in a plan view 18as, showing, in plan, the distribution of the first PSF (shown in solid outlines) superimposed over the distribution of the second PSF (shown in dashed outlines). The main lobe 181 laof the first PSF and the main lobe 182 laof the second PSF exhibit a partial, but close-to-complete overlap.

[0418] In some non-limiting examples, as shown in FIG. 18B, a distribution of a first PSF exhibited by Sample Coupon E2 and a distribution of a second PSF exhibited by Sample Coupon E4 were reproduced in a simplified representation shown in the plan view 18bi and 18b2, respectively. The side lobes 1812b of the first PSF and the side lobes 1822b of the second PSF may exhibit a certain degree of, but short of complete, overlap, as shown in a plan view 18b3, showing, in plan, a distribution of the first PSF (shown in solid outlines) superimposed over the distribution of the second PSF (shown in dashed outlines). As764864-9652-5787.1Atty. Dkt. No. 114246-0448 shown, a first subset of the side lobes 1812b of the first PSF overlaps with a first subset of the side lobes 1822b of the second PSF, while a second subset of the side lobes 1812b of the first PSF does not overlap with a second subset of the side lobes 1822b of the second PSF. The main lobe 181 lb of the first PSF and the main lobe 1821b of the second PSF exhibit a partial, but close-to-complete overlap.

[0419] In some non-limiting examples, as shown in FIG. 18C, a distribution of a first PSF exhibited by Sample Coupon F3 and a distribution of a second PSF exhibited by Sample Coupon F4 were reproduced in a simplified representation shown in the plan view 18ci and 18C2, respectively. Each side lobe 1812cof the first PSF may correspond to, including without limitation, at least partially overlap with, a side lobe 1822cof the second PSF, as shown in a plan view 18C3, showing, in plan, a distribution of the first PSF (shown in solid outlines) superimposed over the distribution of the second PSF (shown in dashed outlines). The main lobe 181 lb of the first PSF and the main lobe 1821b of the second PSF exhibit a partial, but close-to-complete overlap.

[0420] In some non-limiting examples, as shown in FIG. 18D, a distribution of a first PSF exhibited by Sample Coupon D4 and a distribution of a second PSF exhibited by Sample Coupon E6 were reproduced in a simplified representation shown in the plan view 18ui and 18d2, respectively. A main lobe 181 la of the first PSF may be substantially different from a main lobe 182 Id of the second PSF, as shown in a plan view 18d3, showing, in plan, a distribution of the first PSF (shown in solid outlines) superimposed over the distribution of the second PSF (shown in dashed outlines). A side-lobe pattern of the first PSF also differs from a side-lobe pattern of the second PSF such that a first subset of the side lobes 1812a of the first PSF overlaps with a first subset of the side lobes 1822a of the second PSF, while a second subset of the side lobes 1821a of the first PSF does not overlap a second subset of the side lobes 1822a of the second PSF. The main lobe 181 la of the first PSF and a subset of the side lobes 1822a of the second PSF exhibit a certain degree of the overlap.

[0421] Diffracted dots that are indiscernible in the recorded images of FIG. 17 due to a substantially low SNR level are omitted in FIGs. 18A-18D.

[0422] In some non-limiting examples, the PSF of the display panel 100 may comprise components related to aspects thereof that may be substantially unrelated to the layout, including without limitation, at least one of a: number, size (including without774864-9652-5787.1Atty. Dkt. No. 114246-0448 limitation, aperture ratio), shape, orientation, and pitch, of the at least one transmissive region 112. In some non-limiting examples, such aspects may comprise at least one of: the presence of partially transmissive layers, including without limitation, at least one of: the first electrode 1920, the at least one semiconducting layer 330, the second electrode 340, an auxiliary electrode 2850, an underlying layer 2610, and an overlying layer 2170, including without limitation, a variation in refractive index between such layers, the presence of non- transmissive and partially transmissive elements in the display panel 100 and extending within the lateral aspect of the at least one transmissive region 112, including without limitation, TFT structures 2206, and where the transmissive region 112 is formed by depositing a patterning coating 310 thereon such that an exposed layer 11 thereof is substantially devoid of a closed coating 2140 of a deposited layer 331 of a deposited material 2431, a partially transmissive edge around a boundary of an aperture of the at least one transmissive region 112 formed by a difference, in the lateral aspect, the boundary and a boundary of an FMM for defining where the patterning coating 310 is deposited, and a presence of at least one particle structure 2150 on an exposed layer surface 11 of the patterning coating 310.

[0423] FIG. 19 illustrates schematically an example of a part of the display panel 100 comprising a transmissive region 112 formed by depositing a patterning coating 310 thereon, at an interface between the patterning coating 310 in a first portion 1901 and a deposited layer 331 in a second portion 1902.

[0424] The patterning coating 310 in the first portion 1901 may be surrounded on all sides by the deposited layer 331 such that the first portion 1901 may have a boundary that is defined by the further edge 1915 of the patterning coating 310 in the lateral aspect along each lateral axis. In some non-limiting examples, the patterning coating edge 1915 in the lateral aspect may be defined by a perimeter of the first portion 1901 in such aspect.

[0425] In some non-limiting examples, the deposited layer 331 may have a boundary that is defined by the further edge 1935 of the deposited layer 331 in the lateral aspect along each lateral axis. In some non-limiting examples, the deposited layer edge 1935 in the lateral aspect may be defined by a perimeter thereof in such aspect.

[0426] In some non-limiting examples, at least a part of the deposited layer 331 may correspond to a second electrode 340 (not shown) of an emissive region 210. In some nonlimiting examples, an active region 1908 of an individual emissive region 210 may be784864-9652-5787.1Atty. Dkt. No. 114246-0448 defined to be bounded, in the longitudinal aspect, by a first electrode 1920 (shown schematically) and the second electrode 340, and to be confined, in the lateral aspect, to an emissive region 210, defined by presence of each of the first electrode 1920, the second electrode 340, and at least one semiconducting layer 330 therebetween, which may in some non-limiting examples, overlap laterally.

[0427] In some non-limiting examples, in FIG 19, the boundary defining the transmissive region 112 may thus be seen to correspond substantially to the deposited layer edge 1935, such that a region between the boundary of the active region 1908 and the deposited layer edge 1935 may correspond to a deposition-applied (DA) region 1960 and the part of the first portion 1901 enclosed by the deposited layer edge 1935 may correspond to a deposition-free (DF) region 1965.

[0428] While the DF region 1965 may be shown as being surrounded by the DA region 1960, those having ordinary skill in the relevant art will appreciate that, in some nonlimiting examples, the DA region 1960 and the DF region 1965 may be positioned such that one of the DA region 1960 and the DF region 1965 may be adjacent to, including without limitation, interleaved with, and surrounded by, the other of the DA region 1960 and the DF region 1965.

[0429] In some non-limiting examples, a transmissive region 112 comprising a DA region 1960 and a DF region 1965 may be achieved by the aperture 122 defined by the first defining layer 311 and the second defining layer 321. In some non-limiting examples, the second layer aperture boundary 323 may lie entirely within the first layer aperture boundary 313, such that the second layer aperture boundary 323 of the second layer aperture 322 may enclose a DF region 1965 that is substantially devoid of deposited material 2431. Further, in some non-limiting examples, the remaining part within the first layer aperture boundary 313 of the first layer aperture 312 may be considered to be a DA region 1960, in which a deposited layer 331 comprising the deposited material 2431 is disposed, such that the DA region 1960 may substantially surround the DF region 1965.

[0430] In some non-limiting examples, the DA region 1960, including without limitation, a part thereof that overlaps with the patterning coating 310, may exhibit a certain degree of transmissivity different from that of the DF region 1965, such that the boundary defining the transmissive region 112 may thus correspond to a patterning coating edge 1915, and the transmissivity may be varied across a transmissive region 112.794864-9652-5787.1Atty. Dkt. No. 114246-0448

[0431] In some non-limiting examples, a transmittance through the DF region 1965 may be at least that of a transmittance through the DA region 1960, such that the transmissive region 112, may comprise two non-overlapping regions with different transmittance. In some non-limiting examples, the DA region 1960 may be considered to correspond to the “grey zone”.

[0432] In some non-limiting examples, as shown, the absence of the deposited material 2431 in the DF region 1965 may be achieved by ensuring that such material fails to be deposited thereon, including without limitation, by depositing a patterning material 2311, including without limitation, an NIC, in the DF region 1965, to form a patterning coating 310 in a pattern corresponding to the boundary 323 of the aperture 322 defining the DF region 1965, including without limitation, by interposing a shadow mask 2315 therebetween, that corresponds to the boundary 323 of the aperture 322 defining the DF region 1965, during a vapour deposition process, prior to the deposition of the deposited material 2431.

[0433] In some non-limiting examples, when the patterning coating 310 comprises an NIC, the pattern of the patterning material 2311 may substantially correspond to the boundary 323 of the (frontplane) second layer aperture(s) 322, such that, when the deposited material 2431 is thereafter deposited, the deposited material 2431 tends not to be deposited where the patterning coating 310 has been deposited, and tends to accumulate to form the deposited layer 330 in areas that are substantially devoid of the patterning coating 310.

[0434] In some non-limiting examples, the pattern of the deposited layer 331 may be specified by depositing the deposited material 2431 through apertures of a shadow mask in a pattern that is substantially the reverse of the pattern of the DF region 1965.

[0435] In some non-limiting examples, the pattern of the deposited layer 331 may be specified by depositing the deposited material 2431 and thereafter removing deposited material 2431 in a pattern corresponding to the DF region 1965, including without limitation, by photolithography, chemical etching, and laser ablation.Biometric Authentication

[0436] In some non-limiting examples, the user device 110 may house a transmitter 130t for transmitting at least one transmitted EM signal 13 It beyond the face 101. In some804864-9652-5787.1Atty. Dkt. No. 114246-0448 non-limiting examples, the user device 110 may house at least one detector / receiver 13 Or for receiving at least one received EM signal 13 lr from beyond the face 101. In some nonlimiting examples, the at least one received EM signal 13 lr may be the same as the at least one transmitted EM signal 13 It, reflected off an external surface, including without limitation, a user 10, including without limitation, for biometric authentication by a facial identification system thereof.

[0437] Without wishing to be bound by any particular theory, it may be postulated that diffraction incurred at the site of an under-display transmitter 130t, may have substantial impact on the image compared to diffraction incurred at the site of an underdisplay detector / receiver 130a, due to a total distance that the light emitted by the underdisplay transmitter 130t has to travel before returning to the under-display detector / receiver 130d, including without limitation, to and from the object 10, which in some nonlimiting examples, may be on the order of between about a fraction of a meter to a few meters. Accordingly, in some non-limiting examples, a display panel 100 comprising a non under-display transmitter 130t and an under-display detector / receiver 130a may have applicability calling for a reduced diffraction incurred at the transmitter side, and concomitantly, an overall enhanced image quality.

[0438] Having said this, in some non-limiting examples, there may be scenarios calling for an uninterrupted user experience and a substantial aesthetic appeal of the display panel 100. In some non-limiting examples, each of the transmitter 130t and the detector 130a may be arranged behind the display panel 100, and correspond to a signal-exchanging part 103 comprising at least one transmissive region 112.

[0439] In some non-limiting examples, the signal-exchanging part 103 associated with the transmitter 130t may differ from the signal-exchanging part 103 associated with the detector 130d, such that different diffraction characteristics may be imparted to the transmitter 130t and the detector 130d. By doing so, in some non-limiting examples, additional information or data may be obtained compared to the scenarios where both the transmitter 130t and the detector 130d are arranged behind substantially identical signalexchanging parts 103, including without limitation, a common signal-exchanging part 103. In some non-limiting examples, such additional information or data may be used to at least one of: verify, and supplement, the data obtained by detecting the transmitted light, and accordingly facilitate processing of the data.814864-9652-5787.1Atty. Dkt. No. 114246-0448

[0440] In some non-limiting examples, these signal-exchanging parts 103 may differ in at least one of the: layout of the at least one transmissive region 112, including without limitation, at least one of a: size (including without limitation, an aperture ratio), shape, orientation, and pitch, thereof, and the layer structure within the at least one transmissive region 112, including without limitation, presence of a partially transmissive layer, an opaque component, and a particle structure 2150, and their location within the transmissive region 112.Method Actions

[0441] Turning now to FIG. 20, there may be shown a flow chart, shown generally at 2000, showing example actions taken to operate an electronic device 110 comprising a display panel 100 and a plurality of opto-electronic components 130. The opto-electronic components 130 may be configured to at least one of: emit, and receive light in at least a wavelength range of the EM spectrum, including without limitation, at least one of: the visible spectrum, the UV spectrum, the IR spectrum, the NIR spectrum, and a part thereof. The display panel 100 may comprise at least one signal-exchanging part 103 comprising at least one transmissive region 112. In some non-limiting examples, a first one of the optoelectronic components 130 may be arranged behind the at least one signal-exchanging part 130, such that the light that is at least one of: emitted, and received, by the first optoelectronic components 130 may pass through the at least one transmissive region(s) 112.

[0442] One example action 2010 is to process initial outputs from the plurality of opto-electronic components 130 to produce a processed output. In some non-limiting examples, each initial output may comprise diffracted information. In some non-limiting examples, the initial output may be a diffracted image, including without limitation, a raw image, a RGB image, a depth image, and an infrared image.

[0443] In some non-limiting examples, the diffracted information contained in the initial output of an opto-electronic component 130 may be correlated with a(n) (integrated) PSF that is associated with the opto-electronic component 130. In some non-limiting examples, one opto-electronic component 130 may have, associated therewith, a(n) (integrated) PSF that is different from a(n) (integrated) PSF associated with other optoelectronic component(s) 130. Accordingly, the plurality of opto-electronic components 130 may be imparted with different diffraction characteristics, such that an initial output from824864-9652-5787.1Atty. Dkt. No. 114246-0448 one of the opto-electronic components 130 may be different from an initial output from other opto-electronic component(s) 130.

[0444] In some non-limiting examples, the PSF associated with the opto-electronic component 130 may comprise a component associated with optics of the opto-electronic component 130. In some non-limiting examples, the PSF associated with the optoelectronic component 130 may comprise a component associated with the at least one transmissive region(s), including without limitation, a layout thereof, of the signalexchanging part 103, behind which the opto-electronic component 130 may be arranged.

[0445] In some non-limiting examples, more than one opto-electronic component 130 may be arranged behind the at least one signal-exchanging part 103, such that each opto-electronic component 130 may be associated with a PSF that may comprise a component associated with the transmissive regions 112 of the corresponding signalexchanging part 103.

[0446] In some non-limiting examples, the processing may include processing the initial output of one of: the first opto-electronic component 130i and the second optoelectronic component 1302 using the PSF of the other of: the first opto-electronic component 130i and the second opto-electronic component 1302. In some non-limiting examples, the processing may be performed using PSFs, which in some non-limiting examples, may be at least one of a(n): measured, estimated, and calculated, PSF, associated with each opto-electronic component 130. In some non-limiting examples, the processing may be achieved by conducting a de-convolution calculation using the PSFs. In some nonlimiting examples, the processing may be achieved by applying a filter, which in some nonlimiting examples, may be a deconvolution filter, including without limitation, a Wiener filter. In some non-limiting examples, the filter may be selected based at least partially on the PSFs. In some non-limiting examples, the processing may take at least one of: system noise (including without limitation, component-related noise and background noise), imaging conditions, other optical effects (including without limitation, aberrations and scattering), and human vision perception, into account.

[0447] In some non-limiting examples, the action 2010 may comprise an action 2014 to correct the initial outputs to generate corrected outputs.

[0448] In some non-limiting examples, in action 2014, the correction may include diffraction correction. In some non-limiting examples, the diffraction correction may be834864-9652-5787.1Atty. Dkt. No. 114246-0448 performed to correct the diffraction attributed to the presence of the display panel 100 in the optical path of the opto-electronic components 130.

[0449] In some non-limiting examples, the correction may be performed separately for initial output of each opto-electronic component 130. In some non-limiting examples, the correction may be performed by cross-referencing the initial outputs of the plurality of opto-electronic components 130 with each other.

[0450] In some non-limiting examples, the correction may correct diffraction contained in the initial output of one of the first opto-electronic component 130i and the second opto-electronic component 1302 using the PSF of the other of the first optoelectronic component 130i and the second opto-electronic component 1302. In some nonlimiting examples, the correction may be performed using PSFs, which in some nonlimiting examples, may be at least one of a(n): measured, estimated, and calculated, PSF, associated with each opto-electronic component 130. In some non-limiting examples, the correction may be achieved by conducting a de-convolution calculation using the PSFs. In some non-limiting examples, the correction may be achieved by applying a filter, which in some non-limiting examples, may be a deconvolution filter, including without limitation, a Wiener filter. In some non-limiting examples, the filter may be selected based at least partially on the PSFs. In some non-limiting examples, the correction may take at least one of: system noise (including without limitation, component-related noise and background noise), imaging conditions, other optical effects (including without limitation, aberrations and scattering), and human vision perception, into account.

[0451] In some non-limiting examples, the action 2010 may comprise an action 2016 to combine the corrected outputs to generate a combined output subsequent to action 2014.

[0452] In some non-limiting examples, in action 2016, the corrected output from each opto-electronic component 130 may be combined by at least one of a: fusion, and stitching, process, which in some non-limiting examples, may involve aligning and blending.

[0453] In some non-limiting examples, the action 2010 may comprise an action 2012 to pre-process the initial outputs from the plurality of opto-electronic components 130. In some non-limiting examples, the initial outputs may be pre-processed by performing at844864-9652-5787.1Atty. Dkt. No. 114246-0448 least one of: noise reduction, contrast enhancement, color reconstruction, filtering, and image resizing.

[0454] In some non-limiting examples, the action 2010 may comprise an action 2018 to post-process the combined output as a result of the action 2016 of combining. In some non-limiting examples, the combined output may be post-processed by performing at least one: noise reduction, contrast enhancement, color reconstruction, filtering, and image resizing.

[0455] In some non-limiting examples, the action 2010 may be followed by an action 2020 to display the processed output on the display panel. In some non-limiting examples, the processed output may be displayed by the display panel 100. In some nonlimiting examples, the processed output may be at least one of: an image file, video file, 3D image, and 3D video.Layered Device

[0456] The present disclosure relates generally to layered semiconductor devices 2100, and more specifically, to opto-electronic devices 2200. An opto-electronic device 2200 may generally encompass any device 2100 that converts electrical signals into light in the form of photons and vice versa. In some non-limiting examples, the opto-electronic device 2200 may be an organic light-emitting diode (OLED).

[0457] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 2200, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 2431, including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, at a nonzero angle relative to a plane of at least one of the layers.

[0458] Turning now to FIG. 21, there may be shown a cross-sectional view of an example layered semiconductor device 2100. In some non-limiting examples, as shown in greater detail in FIG. 22, the device 2100 may comprise a plurality of layers deposited upon a substrate 10.

[0459] A lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis,854864-9652-5787.1Atty. Dkt. No. 114246-0448 may be shown as being substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define a lateral aspect of the device 2100. The longitudinal axis may define a longitudinal aspect of the device 2100.

[0460] The layers of the device 2100 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 21 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some nonlimiting examples, there may be, across a lateral extent of the device 2100, localized substantially planar strata of different thicknesses and dimension, including, in some nonlimiting examples, the substantially complete absence of at least one layer separated by non- planar transition areas (including lateral gaps and even discontinuities).

[0461] Thus, while for illustrative purposes, the device 2100 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 2100 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect.

[0462] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 2100 may comprise a first portion 1901 and a second portion 1902. In some non-limiting examples, the second portion 1902 may comprise that part of the exposed layer surface 11 of the device 2100 that lies beyond the first portion 1901.

[0463] As shown in FIG. 21, the layers of the device 2100 may comprise a substrate 10, and a patterning coating 310 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. In some non-limiting examples, the patterning coating 310 may be limited in its lateral extent to the first portion 1901 and a deposited layer 331 may be disposed as a closed coating 2140 on an exposed layer surface 11 of the device 2100 in a second portion 1902 of its lateral aspect.

[0464] In some non-limiting examples, at least one particle structure 2150 may be disposed as a discontinuous layer 2160 on the exposed layer surface 11 of the patterning coating 310. In some non-limiting examples, although not shown, at least one of: the patterning coating 310, the deposited layer 331, and at least one particle structure 2150, may be deposited on a layer (underlying layer 2610) other than the substrate 10 including without limitation, an intervening layer between the substrate 10 and at least one of: the patterning coating 310, deposited layer 331, and the at least one particle structure 2150. In864864-9652-5787.1Atty. Dkt. No. 114246-0448 some non-limiting examples, the underlying layer 2610 may comprise at least one of: an orientation layer, and an organic supporting layer.

[0465] In some non-limiting examples, at least one of: the patterning coating 310, the deposited layer 331, and the at least one particle structure 2150, may be covered by at least one overlying layer 2170.

[0466] In some non-limiting examples, such overlying layer 2170 may comprise at least one of: an encapsulation layer and an optical coating. In some non-limiting examples, the encapsulation layer may comprise at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided to encapsulate the device 2100. In some non-limiting examples, the optical coating may comprise at least one of: an optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an anti -reflection coating, an anti-glare coating, cover glass, and an optically clear adhesive (OCA).

[0467] In some non-limiting examples, at least one of: a substantially thin patterning coating 310 in the first portion 1901, and a deposited layer 331 in the second portion 1902, may provide a substantially planar surface on which the overlying layer 2170 may be deposited. In some non-limiting examples, providing such a substantially planar surface for application of such overlying layer 2170 may increase adhesion thereof to such surface.

[0468] In some non-limiting examples, the optical coating may be used to modulate optical properties of light being at least one of: transmitted, emitted, and absorbed, by the device 2100, including without limitation, plasmon modes. In some non-limiting examples, the optical coating may be used as at least one of: an optical filter, index-matching coating, optical outcoupling coating, scattering layer, diffraction grating, and parts thereof.

[0469] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 2100 by, without limitation, tuning at least one of: the total optical path length, and the refractive index thereof. At least one optical property of the device 2100 may be affected by modulating at least one optical microcavity effect including without limitation, the output light, including without limitation, at least one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is, the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.874864-9652-5787.1Atty. Dkt. No. 114246-0448

[0470] In some non-limiting examples, the optical coating may be formed of any deposited material 2431, and in some non-limiting examples, may employ any mechanism of depositing a deposited layer 331 as described herein.Opto-Electronic DeviceSubstrate

[0471] In some non-limiting examples, the substrate 10 may comprise a base substrate 315. In some non-limiting examples, the base substrate 315 may be formed of material suitable for use thereof, including without limitation, at least one of: an inorganic material, including without limitation, at least one of: Si, glass, metal (including without limitation, a metal foil), sapphire, and other inorganic material, and an organic material, including without limitation, a polymer, including without limitation, at least one of: a polyimide, and an Si-based polymer. In some non-limiting examples, the base substrate 315 may be one of: rigid, and flexible. In some non-limiting examples, the substrate 10 may be defined by at least one planar surface. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 that supports the remaining frontplane 301 components of the device 2100, including without limitation, at least one of: the first electrode 1920, the at least one semiconducting layer 330, and the second electrode 340.

[0472] In some non-limiting examples, such surface may be at least one of: an organic surface, and an inorganic surface.

[0473] In some non-limiting examples, the substrate 10 may comprise, in addition to the base substrate 315, at least one additional at least one of: organic, and inorganic, layer (not shown nor specifically described herein) supported on an exposed layer surface 11 of the base substrate 315.

[0474] In some non-limiting examples, such additional layers may comprise, at least one organic layer, which may at least one of: comprise, replace, and supplement, at least one of the semiconducting layers 330.

[0475] In some non-limiting examples, such additional layers may comprise at least one inorganic layer, which may comprise, at least one electrode, which in some nonlimiting examples, may at least one of: comprise, replace, and supplement, at least one of: the first electrode 1920, and the second electrode 340.884864-9652-5787.1Atty. Dkt. No. 114246-0448Backplane and TFT structure(s) embodied therein

[0476] In some non-limiting examples, such additional layers may comprise a backplane 302. In some non-limiting examples, the backplane 302 may comprise at least one of: power circuitry, and switching elements for driving the device 2100, including without limitation, at least one of: at least one electronic thin-film transistor (TFT) structure 2206, and at least one component thereof, that may be formed by a photolithography process.

[0477] In some non-limiting examples, the backplane 302 of the substrate 10 may comprise at least one electronic, including without limitation, an opto-electronic, component, including without limitation, one of: transistors, resistors, and capacitors, such as which may support the device 2100 acting as one of: an active-matrix, and a passive matrix, device 2100. In some non-limiting examples, such structures may be a TFT structure 2206.

[0478] Non-limiting examples of TFT structures 2206 include one of: top-gate, bottom-gate, n-type and p-type TFT structures 2206. In some non-limiting examples, the TFT structure 2206 may incorporate one of: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).First Electrode

[0479] The first electrode 1920 may be deposited over the substrate 10. In some non-limiting examples, the first electrode 1920 may be electrically coupled with at least one of: a terminal of the power source 2204, and ground. In some non-limiting examples, the first electrode 1920 may be so coupled through at least one driving circuit which in some non-limiting examples, may incorporate at least one TFT structure 2206 in the backplane 302 of the substrate 10.

[0480] In some non-limiting examples, the first electrode 1920 may comprise one of: an anode, and cathode. In some non-limiting examples, the first electrode 1920 may be an anode.

[0481] In some non-limiting examples, the first electrode 1920 may be formed by depositing at least one thin conductive film, over (a part of) the substrate 10. In some nonlimiting examples, there may be a plurality of first electrodes 1920, disposed in a spatial arrangement over a lateral aspect of the substrate 10. In some non-limiting examples, at894864-9652-5787.1Atty. Dkt. No. 114246-0448 least one of such at least one first electrodes 1920 may be deposited over (a part of) a TFT insulating layer 307 disposed in a lateral aspect in a spatial arrangement. If so, in some non-limiting examples, at least one of such at least one first electrodes 1920 may extend through an opening of the corresponding TFT insulating layer 307 to be electrically coupled with an electrode of the TFT structures 2206 in the backplane 302.

[0482] In some non-limiting examples, at least one of: the at least one first electrode 1920, and at least one thin film thereof, may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba), and ytterbium (Yb), including without limitation, alloys comprising any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, in varying proportions, including without limitation, combinations of any plurality thereof in at least one layer, any at least one of which may be, without limitation, a thin film.Second Electrode

[0483] The second electrode 340 may be deposited over the at least one semiconducting layer 330. In some non-limiting examples, the second electrode 340 may be electrically coupled with at least one of: a terminal of the power source 2204, and ground. In some non-limiting examples, the second electrode 340 may be so coupled through at least one driving circuit, which in some non-limiting examples, may incorporate at least one TFT structure 2206 in the backplane 302 of the substrate 10.

[0484] In some non-limiting examples, the second electrode 340 may comprise one of: an anode, and a cathode. In some non-limiting examples, the second electrode 340 may be a cathode.

[0485] In some non-limiting examples, the second electrode 340 may be formed by depositing a deposited layer 331, in some non-limiting examples, as at least one thin film, over (a part of) the at least one semiconducting layer 330.

[0486] In some non-limiting examples, there may be a plurality of second electrodes 340, disposed in a spatial arrangement over a lateral aspect of the at least one semiconducting layer 330.904864-9652-5787.1Atty. Dkt. No. 114246-0448

[0487] In some non-limiting examples, the second electrode 340 may extend partially over the patterning coating 310 in a transition region 2245.

[0488] In some non-limiting examples, the at least one second electrode 340 may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including without limitation, alloys comprising at least one of: any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, including without limitation, in varying proportions, zinc oxide (ZnO), and other oxides comprising at least one of: In, and Zn, in at least one layer, and at least one non-metallic material, any of which may be, without limitation, a thin conductive film. In some non-limiting examples, for a Mg: Ag alloy, such alloy composition may range between about 1 :9-9: 1 by volume.

[0489] In some non-limiting examples, the deposition of the second electrode 340 may be performed using one of: an open mask, and a mask-free deposition process.

[0490] In some non-limiting examples, the second electrode 340 may comprise a plurality of such coatings. In some non-limiting examples, such coatings may be distinct coatings disposed on top of one another.

[0491] In some non-limiting examples, the second electrode 340 may comprise a Yb / Ag bi-layer coating. In some non-limiting examples, such bi-layer coating may be formed by depositing a Yb coating, followed by an Ag coating. In some non-limiting examples, a thickness of such Ag coating may exceed a thickness of the Yb coating.

[0492] In some non-limiting examples, the second electrode 340 may be a multicoating electrode 340 comprising a plurality of one of: a metallic coating, and an oxide coating.

[0493] In some non-limiting examples, the second electrode 340 may comprise a fullerene and Mg.

[0494] In some non-limiting examples, such coating may be formed by depositing a fullerene coating followed by an Mg coating. In some non-limiting examples, a fullerene may be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of: United States Patent Application Publication No. 2015 / 0287846 published 8 October 2015, and in PCT914864-9652-5787.1Atty. Dkt. No. 114246-0448International Application No. PCT / IB2017 / 054970 filed 15 August 2017 and published as W02018 / 033860 on 22 February 2018.Semiconducting layer

[0495] In some non-limiting examples, the at least one semiconducting layer 330 may comprise a plurality of layers 2231, 2233, 2235, 2237, 2239, any of which may be disposed, in some non-limiting examples, in a thin film, in a stacked configuration, which may include, without limitation, at least one of a hole injection layer (HIL) 2231, an HTL 2233, an emissive layer (EML) 2235, an ETL 2237, and an electron injection layer (EIL) 2239.

[0496] In some non-limiting examples, the at least one semiconducting layer 330 may form a “tandem” structure comprising a plurality of EMLs 2235. In some non-limiting examples, such tandem structure may also comprise at least one charge generation layer (CGL).

[0497] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 2200 may be varied by one of omitting, and combining, at least one of the semiconducting layers 2231, 2233, 2235, 2237, 2239.

[0498] In some non-limiting examples, any of the layers 2231, 2233, 2235, 2237, 2239 of the at least one semiconducting layer 330 may comprise any number of sub-layers. In some non-limiting examples, any of such layers 2231, 2233, 2235, 2237, 2239, including without limitation, sub-layer(s) thereof may comprise various ones of a mixture, and a composition gradient. In some non-limiting examples, although not shown, the device 2200 may comprise at least one layer comprising one of an inorganic, and an organometallic, material, and may not be necessarily limited to devices 2200 comprised solely of organic materials. In some non-limiting examples, the device 2200 may comprise at least one quantum dot (QD).

[0499] In some non-limiting examples, the HIL 2231 may be formed using a hole injection material, which may, in some non-limiting examples, facilitate injection of holes by the anode.

[0500] In some non-limiting examples, the HTL 2233 may be formed using a hole transport material, which may, in some non-limiting examples, exhibit high hole mobility.924864-9652-5787.1Atty. Dkt. No. 114246-0448

[0501] In some non-limiting examples, the ETL 2237 may be formed using an electron transport material, which may, in some non-limiting examples, exhibit high electron mobility.

[0502] In some non-limiting examples, the EIL 2239 may be formed using an electron injection material, which may, in some non-limiting examples, facilitate injection of electrons by the cathode.

[0503] In some non-limiting examples, the at least one EML 2235 may be formed, in some non-limiting examples, by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of: a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0504] In some non-limiting examples, the emitter material may be one of a R(ed) emitter material, a G(reen) emitter material, and a B(lue) emitter material, that is, an emitter material that facilitates the emission of respectively, R(ed), G(reen), and B(lue) light.

[0505] In some non-limiting examples, the device 2200 may be an OLED in which the at least one semiconducting layer 330 may comprise at least one EML 2235 interposed between conductive thin film electrodes 1920, 340, whereby, when a potential difference is applied across them, holes may be injected into the at least one semiconducting layer 330 through the anode and electrons may be injected into the at least one semiconducting layer 330 through the cathode, to migrate toward the at least one EML 2235 and combine to emit light in the form of photons.

[0506] In some non-limiting examples, the device 2200 may be an electroluminescent QD device in which the at least one semiconducting layer 330 may comprise an active layer comprising at least one QD. When current is provided by the power source 2204 to the first electrode 1920 and second electrode 340, light, including without limitation, in the form of photons, may be emitted from the active layer comprising the at least one semiconducting layer 330 between them.

[0507] In some non-limiting examples, including where the device 2200 comprises a lighting panel, an entire lateral aspect of the device 2200 may correspond to a single emissive element. As such, the substantially planar cross-sectional profile shown in FIG. 22 may extend substantially along the entire lateral aspect of the device 2200, such that light934864-9652-5787.1Atty. Dkt. No. 114246-0448 is emitted from the device 2200 substantially along the entirety of the lateral extent thereof. In some non-limiting examples, such single emissive element may be driven by a single driving circuit of the device 2200.

[0508] In some non-limiting examples, including where the device 2200 comprises a display module, the lateral aspect of the device 2200 may be sub-divided into a plurality of emissive regions 210 of the device 2200, in which the longitudinal aspect of the structure thereof, within each of the emissive region(s) 210, may cause light to be emitted therefrom when energized.

[0509] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 2200 may be varied by the introduction of at least one additional layer (not shown) at appropriate position(s) within the at least one semiconducting layer 330 stack, including without limitation, at least one of: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0510] In some non-limiting examples, the patterning coating 310 may be formed concurrently with the at least one semiconducting layer(s) 330. In some non-limiting examples, at least one material used to form the patterning coating 310 may also be used to form the at least one semiconducting layer(s) 330. In some non-limiting examples, the ETL 2237 of the at least one semiconducting layer 330 may be a patterning coating 310 that may be deposited in the first portion 1901 and the second portion 1902 during the deposition of the at least one semiconducting layer 330. The EIL 2239 may then be selectively deposited in the emissive region 210 of the second portion 1902 over the ETL 2237, such that the exposed layer surface 11 of the ETL 2237 in the first portion 1901 may be substantially devoid of the EIL 2239. The exposed layer surface 11 of the EIL 2239 in the emissive region 210 and the exposed layer surface of the ETL 2237, which acts as the patterning coating 310, may then be exposed to a vapor flux 2432 of the deposited material 2431 to form a closed coating 2140 of the deposited layer 331 on the EIL 2239 in the second portion 1902, and a discontinuous layer 2160 of the deposited material 2431 on the ETL 2237 in the first portion 1901. In such non-limiting example, several stages for fabricating the device 2200 may be reduced.Emissive Region(s)944864-9652-5787.1Atty. Dkt. No. 114246-0448

[0511] A simplified block diagram from a longitudinal aspect, of an emissive region 210, corresponding to a (sub-) pixel 215 / 216 of an example opto-electronic device 2200, which may be, in some non-limiting examples, an electro-luminescent device 2200, including without limitation, an OLED, according to the present disclosure is shown in FIG. 22, surrounded by at least one non-emissive region 1911.

[0512] Within the emissive region 210, the device 2200 may comprise a substrate 10, upon which a frontplane 301, comprising a plurality of layers, respectively, a first electrode 1920, at least one semiconducting layer 330, and a second electrode 340, is disposed. In some non-limiting examples, the frontplane 301 may provide mechanisms for emission of light, including without limitation, photons.

[0513] In some non-limiting examples, various coatings of such devices 2200 may be formed by vacuum-based deposition processes.

[0514] In some non-limiting examples, the first electrode 1920 and the second electrode 340 of an emissive region 210 of the device 2200 may be electrically coupled with a power source 2204. When so coupled, the emissive region 210 may emit light, including without limitation, photons, as described herein.

[0515] In some non-limiting examples, including where the OLED device 2200 may comprise a display module, the lateral aspect of the device 2200 may be sub-divided into a plurality of emissive regions 210 of the device 2200, in which the longitudinal aspect of the device 2200 structure, within each of the emissive region(s) 210, may cause light to be emitted therefrom when energized.

[0516] In some non-limiting examples, an individual emissive region 210 may have an associated pair of electrodes 1920, 340, one of which may act as an anode and the other of which may act as a cathode, and at least one semiconducting layer 330 between them. Such an emissive region 210 may emit light at a given wavelength spectrum and may correspond to one of a pixel 215, and a sub-pixel 216 thereof. In some non-limiting examples, a plurality of sub-pixels 216, each corresponding to and emitting light of a different wavelength (range) may collectively form a pixel 215.

[0517] In some non-limiting examples, the wavelength spectrum may correspond to a colour in, without limitation, the visible spectrum. The light at a first wavelength (range) emitted by a first sub-pixel 216 of a pixel 215 may perform differently than the light at a954864-9652-5787.1Atty. Dkt. No. 114246-0448 second wavelength (range) emitted by a second sub-pixel 216 thereof because of the different wavelength (range) involved.

[0518] In some non-limiting examples, an active region 1908 of an individual emissive region 210 may be defined to be bounded, in the longitudinal aspect, by the first electrode 1920 and the second electrode 340, and to be confined, in the lateral aspect, to an emissive region 210, defined by presence of each of the first electrode 1920, the second electrode 340, and the at least one semiconducting layer 330 therebetween (“emissive region layers”), that is, the first electrode 1920, the second electrode 340, and the at least one semiconducting layer 330 therebetween, overlap laterally.

[0519] Those having ordinary skill in the relevant art will appreciate that the lateral aspect of the emissive region 210, and thus the lateral boundaries of the active region 1908, may not correspond to the entire lateral aspect of at least one of: the first electrode 1920, the second electrode 340, and the at least one semiconducting layer 330 therebetween. Rather, as the at least one semiconducting layer 330 may, in some non-limiting examples, extend at least beyond the lateral aspect of at least one of the first electrode 1920, and the second electrode 340, the lateral aspect of the emissive region 210 may be substantially no more than the lateral extent of either of: the first electrode 1920, and the second electrode 340. In some non-limiting examples, at least one of: parts of the first electrode 1920 may be covered by at least one pixel definition layer PDL 309, and parts of the second electrode 340 may not be disposed on the at least one semiconducting layer 330, with the result, in at least one scenario, that the emissive region 210 may be laterally constrained thereby.

[0520] In some non-limiting examples, at least one of the various emissive region layers may be deposited by deposition of a corresponding constituent emissive region layer material.

[0521] In some non-limiting examples, some of the at least one semiconducting layers 330 may be laid out in a desired pattern by vapor deposition of the corresponding emissive region layer material through a fine metal mask (FMM) having apertures corresponding to the desired locations where the emissive region layer material is to be deposited. In some non-limiting examples, a plurality of the emissive region layers may be laid out in a similar pattern, including without limitation, by depositing the respective emissive region layer material thereof in their respective deposition stages using an FMM.964864-9652-5787.1Atty. Dkt. No. 114246-0448

[0522] In some non-limiting examples, as discussed herein, the emissive region layer material corresponding to at least one of the first electrode 1920 and the second electrode 340, including without limitation, the second electrode 340, may be deposited by prior deposition of a patterning coating 310 by vapor deposition of a patterning material through an FMM having apertures corresponding to the desired locations where the patterning coating 310 is to be deposited and thereafter depositing the emissive region layer material using one of: an open mask, and mask-free deposition process.

[0523] In some non-limiting examples, the patterning coating 310 may be adapted to impact a propensity of a vapor flux 2432 of a deposited material 2431 of which the emissive region layer material may be comprised, to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 2431 that is no more than an initial sticking probability against the deposition of the deposited material 2431 of the exposed layer surface 11 of the at least one semiconducting layer 330.

[0524] In some non-limiting examples, the first electrode 1920 may be disposed over an exposed layer surface 11 of the device 2200, in some non-limiting examples, within at least a part of the lateral aspect of the emissive region 210. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216, the exposed layer surface 11, may, at the time of deposition of the first electrode 1920, comprise the TFT insulating layer 307 of the various TFT structures 2206 that make up the driving circuit for the emissive region 210 corresponding to a single display (sub-) pixel 215 / 216.

[0525] In some non-limiting examples, the TFT insulating layer 307 may be formed with an opening extending therethrough to permit the first electrode 1920 to be electrically coupled with a TFT electrode including, without limitation, a TFT drain electrode.

[0526] Those having ordinary skill in the relevant art will appreciate that the driving circuit may comprise a plurality of TFT structures 2206. In FIG. 22, for purposes of simplicity of illustration, only one TFT structure 2206 may be shown, but it will be appreciated by those having ordinary skill in the relevant art, that such TFT structure 2206 may be representative of at least one of: such plurality thereof, and at least one component thereof, that comprise the driving circuit.974864-9652-5787.1Atty. Dkt. No. 114246-0448

[0527] In some non-limiting examples, an extremity of the first electrode 1920 may be covered by at least one PDL 309 such that a part of the at least one PDL 309 may be interposed between the first electrode 1920 and the at least one semiconducting layer 330, such that such extremity of the first electrode 1920 may lie beyond the active region 1908 of the associated emissive region 210.

[0528] In some non-limiting examples, part(s) of the second electrode 340 may not be disposed directly on the at least one semiconducting layer 330, such that the emissive region 210 may be laterally constrained thereby.

[0529] In some non-limiting examples, the at least one semiconducting layer 330 (including without limitation, at least one of: layers 2231, 2233, 2235, 2237, 2239 thereof) may be deposited over the exposed layer surface 11 of the device 2200, including at least a part of the lateral aspect of such emissive region 210 of the (sub-) pixel(s) 215 / 216. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216, such exposed layer surface 11, may, at the time of deposition of such at least one semiconducting layer 330 comprise the first electrode 1920.

[0530] In some non-limiting examples, the at least one semiconducting layer 330 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 1911. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissive region(s) 1911 may, at the time of deposition of the at least one semiconducting layer 330, comprise the PDL(s) 309.

[0531] In some non-limiting examples, the second electrode 340 may be disposed over an exposed layer surface 11 of the device 2200, including at least a part of the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216, such exposed layer surface 11, may, at the time of deposition of the second electrode 1920, comprise the at least one semiconducting layer 330.

[0532] In some non-limiting examples, the second electrode 340 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 215 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 1911. In some non-limiting examples, an exposed layer surface 11 of such surrounding non-emissive984864-9652-5787.1Atty. Dkt. No. 114246-0448 region(s) 1911 may, at the time of deposition of the second electrode 340, comprise the PDL(s) 309.

[0533] In some non-limiting examples, the second electrode 340 may extend throughout a substantial part, including without limitation, substantially all, of the lateral aspects of the surrounding non-emissive region(s) 1911.

[0534] In some non-limiting examples, individual emissive regions 210 of the device 2200 may be laid out in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples, may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially normal to the first lateral direction. In some non-limiting examples, the pattern may have a number of elements in such pattern, each element being characterized by at least one feature thereof, including without limitation, at least one of: a wavelength of light emitted by the emissive region 210 thereof, a shape of such emissive region 210, a dimension (along at least one of: the first, and second, lateral directi on(s)), an orientation (relative to at least one of: the first, and second, lateral directi on(s)), and a spacing (relative to at least one of: the first, and second, lateral direction(s)) from a previous element in the pattern. In some non-limiting examples, the pattern may repeat in at least one of: the first, and second, lateral directi on(s).

[0535] In some non-limiting examples, each individual emissive region 210 of the device 2200 may be associated with, and driven by, a corresponding driving circuit within the backplane 302 of the device 2200, for driving an OLED structure for the associated emissive region 210. In some non-limiting examples, including without limitation, where the emissive regions 210 may be laid out in a regular pattern extending in both the first (row) lateral direction and the second (column) lateral direction, there may be a signal line in the backplane 302, corresponding to each row of emissive regions 210 extending in the first lateral direction and a signal line, corresponding to each column of emissive regions 210 extending in the second lateral direction. In such a non-limiting configuration, a signal on a row selection line may energize the respective gates of the switching TFT structure(s) 2206 electrically coupled therewith and a signal on a data line may energize the respective sources of the switching TFT structure(s) 2206 electrically coupled therewith, such that a signal on a row selection line / data line pair may electrically couple and energise, by the994864-9652-5787.1Atty. Dkt. No. 114246-0448 positive terminal of the power source 2204, the anode of the OLED structure of the emissive region 210 associated with such pair, causing the emission of a photon therefrom, the cathode thereof being electrically coupled with the negative terminal of the power source 2204.

[0536] In some non-limiting examples, a single display pixel 215 may comprise three sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of: a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B. In some non-limiting examples, a single display pixel 215 may comprise four sub-pixels 216, each corresponding respectively to a single sub-pixel 216 of each of two colours, including without limitation, a R(ed) sub-pixel 216R, and a B(lue) sub-pixel 216B, and two sub-pixels 216 of a third colour, including without limitation, a G(reen) sub-pixel 216G. In some nonlimiting examples, a single display pixel 215 may comprise four sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of: a R(ed) sub-pixel 216R, a G(reen) sub-pixel 216G, and a B(lue) sub-pixel 216B, and a fourth W(hite) sub-pixel 216w.

[0537] In some non-limiting examples, the emission spectrum of the light emitted by a given (sub-) pixel 215 / 216 may correspond to the colour by which the (sub-) pixel 215 / 216 may be denoted. In some non-limiting examples, the wavelength of the light may not correspond to such colour, but further processing may be performed, in a manner apparent to those having ordinary skill in the relevant art, to transform the wavelength to one that does so correspond.

[0538] In some non-limiting examples, the emission spectrum of the light emitted by a given (sub-) pixel 215 / 216, corresponding to the colour by which the (sub-) pixel 215 / 216 may be denoted, may be related to at least one of: the structure and composition of the at least one semiconducting layer 330 extending between the first electrode 1920 and the second electrode 340 thereof, including without limitation, the at least one EML 2235. In some non-limiting examples, the at least one EML 2235 of the at least one semiconducting layer 330 may be tuned to facilitate the emission of light having an emission spectrum corresponding to the colour by which the (sub-) pixel 215 / 216 may be denoted. In some non-limiting examples, the EML 2235 of a R(ed) sub-pixel 216R may comprise a R(ed) EML material, including without limitation, a host material doped with a R(ed) emitter1004864-9652-5787.1Atty. Dkt. No. 114246-0448 material. In some non-limiting examples, the EML 2235 of a G(reen) sub-pixel 216G may comprise a G(reen) EML material, including without limitation, a host material doped with a G(reen) emitter material. In some non-limiting examples, the EML 2235 of a B(lue) subpixel 216B may comprise B(lue) EML material, including without limitation, a host material doped with a B(lue) emitter material.

[0539] In some non-limiting examples, at least one characteristic of at least one of the at least one semiconducting layer 330, including without limitation, the HIL 2231, the HTL 2233, the EML 2235, the ETL 2237, and the EIL 2239, including without limitation, a presence thereof, an absence thereof, a thickness thereof, a composition thereof, and an order thereof, in the longitudinal aspect, may be selected to facilitate emission therefrom of light having a wavelength spectrum corresponding to the colour by which a given sub-pixel 216 may be denoted, including without limitation, at least one of: R(ed), G(reen), and B(lue).

[0540] In some non-limiting examples, emission of light having a wavelength spectrum corresponding to a plurality of colours selected from: R(ed), G(reen), and B(lue) may facilitate emission of light having a wavelength spectrum corresponding to a different colour, including without limitation W(hite) (R+G+B), Y(ellow) (R+G), C(yan) (G+B), and M(agenta) (B+R), according to the additive colour model.

[0541] In some non-limiting examples, the exposed layer surface 11 of the device 2100 may be exposed to a vapor flux 2432 of a deposited material 2431, including without limitation, in one of: an open mask, and mask-free, deposition process.

[0542] In some non-limiting examples, in at least a part of the emissive region 210, the at least one semiconducting layer 330 may be deposited over the exposed layer surface 11 of the device 2200, which in some non-limiting examples, comprise the first electrode 1920.

[0543] In some non-limiting examples, the exposed layer surface 11 of the device 2200, which may, in some non-limiting examples, comprise the at least one semiconducting layer 330, may be exposed to a vapor flux 2312 of the patterning material 2311, including without limitation, using a shadow mask 2315, to form a patterning coating 310 in the first portion 1901. Whether a shadow mask 2315 is employed, the patterning coating 310 may be restricted, in its lateral aspect, substantially to a transmissive region 112.1014864-9652-5787.1Atty. Dkt. No. 114246-0448

[0544] In some non-limiting examples, a lateral aspect of at least one emissive region 210 may extend across and include at least one TFT structure 2206 associated therewith for driving the emissive region 210 along data and scan lines (not shown), which, in some non-limiting examples, may be formed of at least one of: Cu, and a TCO.

[0545] In some non-limiting examples, the (sub-) pixels 215 / 216 may be disposed in a side-by-side arrangement. In some non-limiting examples, a (colour) order of the subpixels 216 of a first pixel 215 may be the same as a (colour) order of the sub-pixels 216 of a second pixel 215. In some non-limiting examples, a (colour) order of the sub-pixels 216 of a first pixel 215 may be different from a (colour) order of the sub-pixels 216 of a second pixel 215.

[0546] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 215 may be aligned in at least one of: a row, column, and array, arrangement.

[0547] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 215 may comprise sub-pixels 216 of one of: a same, and a different, colour.

[0548] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 215 may be aligned with at least one of: a second, and a third, at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 215.

[0549] In some non-limiting examples, a first at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 215 may be one of: offset from, and misaligned with, at least one of: a second, and a third, at least one of: a row, and a column, of aligned sub-pixels 216 of adjacent pixels 215.

[0550] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 215 of such at least one of: first, second, and third, at least one of: a row, and a column, may be arranged such that corresponding sub-pixels 216 of each of the at least one of: first, second, and third, at least one of: a row, and a column, may be of a same colour.

[0551] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 215 of such at least one of: first, second, and third, at least one of: a row, and a column, may be arranged such that corresponding sub-pixels 216 of each of the at least one of: first, second and third, at least one of: a row, and a column, may be of different colours.1024864-9652-5787.1Atty. Dkt. No. 114246-0448

[0552] In some non-limiting examples, in the at least one signal-exchanging part 103 of a display panel 100, the at least one transmissive region 112 may be disposed between a plurality of emissive regions 210. In some non-limiting examples, the at least one transmissive region 112 may be disposed between adjacent (sub-) pixels 215 / 216. In some non-limiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 112 may form part of a same pixel 215. In some non-limiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 112 may be associated with different pixels 215.

[0553] In some non-limiting examples, a region that may be substantially devoid of a closed coating 2140 of a second electrode material (“cathode-free region”), including without limitation, the at least one transmissive region 112, in some non-limiting examples, may exhibit different opto-electronic characteristics from other regions, including without limitation, the at least one emissive region 210. In some non-limiting examples, such cathode-free regions may nevertheless comprise some second electrode material, including without limitation, in the form of a discontinuous layer 2160 of one of: at least one particle structure 2150, and at least one instance of such particle structures 2150.

[0554] In some non-limiting examples, this may be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation may create a debris cloud, which may impact the vapour deposition process.

[0555] In some non-limiting examples, this may be achieved by disposing a patterning coating 310, which may, in some non-limiting examples, be a nucleation inhibiting coating (NIC), using an FMM, in a pattern on an exposed layer surface 11 of the at least one semiconducting layer 330 prior to depositing a deposited material 2431 for forming the second electrode 340 thereon.

[0556] In some non-limiting examples, the patterning coating 310 may be adapted to impact a propensity of a vapor flux 2432 of the deposited material 2431 to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 2431 that is no more than an initial sticking probability against the deposition of the deposited material 2431 of the exposed layer surface 11 of the at least one semiconducting layer 330.1034864-9652-5787.1Atty. Dkt. No. 114246-0448

[0557] In some non-limiting examples, the patterning coating 310 may be deposited in a pattern that may correspond to the first portion 1901 of a lateral aspect, including without limitation, of at least some of the transmissive regions 112.

[0558] In some non-limiting examples, the patterning coating 310 may be deposited in a plurality of stages, each using a different FMM defining a different pattern within the first portion 1901, that respectively correspond to a different subset of the transmissive regions 112.

[0559] In some non-limiting examples, the display panel 100 may, subsequent to (all of the stages of) the deposition of the patterning coating 310, be subjected to a vapor flux 2432 of the deposited material 2431, in one of an open mask, and mask-free, deposition process, to form the second electrode 340 for each of the emissive regions 210 corresponding to a (sub-) pixel 215 / 216 in at least the second portion 1902 of the lateral aspect, but not in the first portion 1901 of the lateral aspect.

[0560] In some non-limiting examples, although not shown, the overlying layer 2170 may be arranged above at least one of the second electrode 340, and the patterning coating 310. In some non-limiting examples, although not shown, the overlying layer 2170 may be deposited at least partially across the lateral extent of the opto-electronic device 2200, in some non-limiting examples, covering the second electrode 340 in the second portion 1902, and, in some non-limiting examples, at least partially covering the at least one particle structure 2150 and forming an interface with the patterning coating 310 at the exposed layer surface 11 thereof in the first portion 1901.Non-Emissive Regions

[0561] In some non-limiting examples, the various emissive regions 210 of the device 2200 may be substantially surrounded and separated by, in at least one lateral direction, at least one non-emissive region 1911, in which at least one of the structure, and configuration, along the longitudinal aspect, of the device 2200 shown, without limitation, may be varied, to substantially inhibit light to be emitted therefrom.

[0562] In some non-limiting examples, the non-emissive regions 1911 may comprise those regions in the lateral aspect, that are substantially devoid of an emissive region 210.1044864-9652-5787.1Atty. Dkt. No. 114246-0448

[0563] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconducting layer 330 may be varied to define at least one emissive region 210, surrounded (at least in one lateral direction) by at least one non- emissive region 1911.

[0564] In some non-limiting examples, the emissive region 210 corresponding to a single display (sub-) pixel 215 / 216 may be understood to have a lateral aspect, surrounded in at least one lateral direction by at least one non-emissive region 1911.

[0565] A non-limiting example of an implementation of the longitudinal aspect of the device 2200 as applied to an emissive region 210 corresponding to a single display (sub- ) pixel 215 / 216 of the display 3600 will now be described. While features of such implementation are shown to be specific to the emissive region 210, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, more than one emissive region 210 may encompass features in common.

[0566] In some non-limiting examples, the lateral aspects of the surrounding non- emissive region(s) 1911 may be characterized by the presence of a corresponding PDL 309.

[0567] In some non-limiting examples, a thickness of the PDL 309 may increase from a minimum, where it covers the extremity of the first electrode 1920, to a maximum beyond the lateral extent of the first electrode 1920. In some non-limiting examples, the change in thickness of the at least one PDL 309 may define a valley shape centered about the emissive region 210. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the light emitted by the emissive region 210.

[0568] While the PDL(s) 309 have been generally illustrated herein as having a linearly-sloped surface to form a valley-shaped configuration that define the emissive region(s) 210 surrounded thereby, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, at least one of: the shape, aspect ratio, thickness, width, and configuration of such PDL(s) 309 may be varied. In some nonlimiting examples, a PDL 309 may be formed with one of: a substantially steep part and a more gradually sloped part. In some non-limiting examples, such PDL(s) 309 may be configured to extend substantially normally away from a surface on which it is deposited, that may cover at least one edge of the first electrode 1920. In some non-limiting examples, such PDL(s) 309 may be configured to have deposited thereon at least one semiconducting1054864-9652-5787.1Atty. Dkt. No. 114246-0448 layer 330 by a solution-processing technology, including without limitation, by printing, including without limitation, ink-jet printing.

[0569] In some non-limiting examples, the PDLs 309 may be deposited substantially over the TFT insulating layer 307, although, as shown, in some non-limiting examples, the PDLs 309 may also extend over at least a part of the deposited first electrode 1920, including without limitation, its outer edges.

[0570] In some non-limiting examples, the lateral extent of at least one of the non- emissive regions 1911 may be at least, and in some non-limiting examples, exceed, including without limitation, be a multiple of, the lateral extent of the emissive region 210 interposed therebetween.

[0571] In some non-limiting examples, a thickness of at least one PDL 309 in at least one transmissive region 112, in some non-limiting examples, of at least one non- emissive region 1911, interposed between adjacent emissive regions 210, in some nonlimiting examples, at least in a region laterally spaced apart therefrom, and in some nonlimiting examples; although not shown, of the TFT insulating layer 307, may be reduced in order to enhance at least one of: a transmittivity, and a transmittivity angle, relative to and through the layers of a display panel 100, to facilitate transmission of light therethrough.Patterning

[0572] In some non-limiting examples, with reference to FIG. 21, in some nonlimiting examples, a patterning coating 310, comprising a patterning material 2311, which in some non-limiting examples, may be an NIC material, may be disposed, in some nonlimiting examples, as a closed coating 2140, on an exposed layer surface 11 of an underlying layer 2610, including without limitation, a substrate 10, of the device 2100, in some non-limiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 2315 such as, without limitation, a fine metal mask (EMM), including without limitation, to the first portion 1901.

[0573] Thus, in some non-limiting examples, in the second portion 1902 of the device 2100, the exposed layer surface 11 of the underlying layer 2610 of the device 2100, may be substantially devoid of a closed coating 2140 of the patterning coating 310.

[0574] In some non-limiting examples, the deposited layer 331 may be deposited in a second portion 1902, by exposing the exposed layer surface 11 of the device 2200, which1064864-9652-5787.1Atty. Dkt. No. 114246-0448 may, in some non-limiting examples, comprise the at least one semiconducting layer 330, to a vapor flux 2312 of a patterning material 2311, including without limitation, using a shadow mask 2315, to form a patterning coating 310 in the first portion 1901. Whether a shadow mask 2315 is employed, in some non-limiting examples, as shown in FIG. 23, the patterning material 2311 may be restricted, in its lateral aspect, substantially to an emissive region 210 to a non-emissive region 1911, including without limitation, at least one transmissive region 112 located therein.

[0575] In some non-limiting examples, with reference to FIG. 21, in some nonlimiting examples, a patterning coating 310, comprising a patterning material 2311, which in some non-limiting examples, may be an NIC material, may be disposed, in some nonlimiting examples, as a closed coating 2140, on an exposed layer surface 11 of an underlying layer 2610, including without limitation, a substrate 10, of the device 2100, in some non-limiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 2315 such as, without limitation, an FMM, including without limitation, to the first portion 1901.

[0576] Thus, in some non-limiting examples, in the second portion 1902 of the device 2100, the exposed layer surface 11 of the underlying layer 2610 of the device 2100, may be substantially devoid of a closed coating 2140 of the patterning coating 310.Patterning Coating

[0577] The patterning coating 310 may comprise a patterning material 2311. In some non-limiting examples, the patterning material 2311 may comprise an NIC material. In some non-limiting examples, the patterning coating 310 may comprise a closed coating 2140 of the patterning material 2311.

[0578] The patterning coating 310 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initial sticking probability) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.) against the deposition of a deposited material 2431 to be deposited thereon upon exposing such surface to a vapor flux 2432 of the deposited material 2431, which, in some non-limiting examples, may be substantially less than the propensity against the deposition of the deposited material 2431 to be1074864-9652-5787.1Atty. Dkt. No. 114246-0448 deposited on the exposed layer surface 11 of the underlying layer 2610 of the device 2100, upon which the patterning coating 310 has been deposited.

[0579] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of: at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, against the deposition of the deposited material 2431, the exposed layer surface 11 of the first portion 1901 comprising the patterning coating 310 may be substantially devoid of a closed coating 2140 of the deposited material 2431.

[0580] In some non-limiting examples, exposure of the device 2100 to a vapor flux 2432 of the deposited material 2431 may, in some non-limiting examples, result in the formation of a closed coating 2140 of a deposited layer 331 of the deposited material 2431 in the second portion 1902, where the exposed layer surface 11 of the underlying layer 2610 may be substantially devoid of a closed coating 2140 of the patterning coating 310.

[0581] In some non-limiting examples, the patterning coating 310 may be an NIC that provides high deposition (patterning) contrast against subsequent deposition of the deposited material 2431, such that the deposited material 2431 tends not to be deposited, in some non-limiting examples, as a closed coating 2140, where the patterning coating 310 has been deposited.

[0582] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 310 for causing formation of a discontinuous layer 2160 of at least one particle structure 2150, upon the patterning coating 310 in the first portion 1901 being subjected to a vapor flux 2432 of a deposited material 2431. In at least some applications, the attributes of the patterning coating 310 may be such that a closed coating 2140 of the deposited material 2431 may be formed in the second portion 1902, which may be substantially devoid of the patterning coating 310, while only a discontinuous layer 2160 of at least one particle structure 2150 having at least one characteristic may be formed in the first portion 1901 on the patterning coating 310.

[0583] For purposes of simplicity of discussion, in the present disclosure, to the extent that a patterning coating 310 is deposited to act as a base for the deposition of at least one particle structure 2150 thereon, such patterning coating 310 may be designated as a1084864-9652-5787.1Atty. Dkt. No. 114246-0448 particle structure patterning coating 310p. By contrast, to the extent that a patterning coating 310 is deposited in a first portion 1901 to substantially preclude formation in such first portion 1901 of a closed coating 2140 of the deposited layer 331, thus restricting the deposition of a closed coating 2140 of the deposited layer 331 to a second portion 1902, such patterning coating 310 may be designated as a non-particle structure patterning coating 310n. Those having ordinary skill in the relevant art will appreciate that in some nonlimiting examples, a patterning coating 310 may act as both a particle structure patterning coating 310pand a non-particle structure patterning coating 310n.

[0584] In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 2160 of at least one particle structure 2150 of a deposited material 2431, which may be, in some non-limiting examples, of one of a metal, and a metal alloy (metal / alloy), including without limitation, at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, in the second portion 1902, while depositing a closed coating 2140 of the deposited material 2431 having a thickness of, without limitation, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm. In some nonlimiting examples, an amount of the deposited material 2431 deposited as a discontinuous layer 2160 of at least one particle structure 2150 in the first portion 1901 may correspond to one of between about: 1-50%, 2-25%, 5-20%, and 7-10%, of the amount of the deposited material 2431 deposited as a closed coating 2140 in the second portion 1902, which, in some non-limiting examples may correspond to a thickness of one of no more than about: 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0585] In some non-limiting examples, the patterning coating 310 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of a closed coating 2140 of the patterning coating 310.

[0586] In some non-limiting examples, the at least one region may separate the patterning coating 310 into a plurality of discrete fragments thereof. In some non-limiting examples, the plurality of discrete fragments of the patterning coating 310 may be physically spaced apart from one another in the lateral aspect thereof. In some non-limiting examples, the plurality of the discrete fragments of the patterning coating 310 may be arranged in a regular structure, including without limitation, an array (matrix), such that in some non-limiting examples, the discrete fragments of the patterning coating 310 may be configured in a repeating pattern.1094864-9652-5787.1Atty. Dkt. No. 114246-0448

[0587] In some non-limiting examples, at least one of the plurality of the discrete fragments of the patterning coating 310 may each correspond to an emissive region 210. In some non-limiting examples, an aperture ratio of the emissive regions 210 may be one of no more than about: 50%, 40%, 30%, and 20%.

[0588] In some non-limiting examples, the patterning coating 310 may be formed as a single monolithic coating.Attributes of Patterning Coating / MaterialComposition

[0589] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, may comprise at least one of: a fluorine (F) atom, and a silicon (Si) atom. In some non-limiting examples, the patterning material 2311 for forming the patterning coating 310 may be a compound that comprises at least one of: F and Si.

[0590] In some non-limiting examples, the patterning material 2311 may comprise a compound that comprises F. In some non-limiting examples, the patterning material 2311 may comprise a compound that comprises F and a carbon atom. In some non-limiting examples, the patterning material 2311 may comprise a compound that comprises F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0591] In some non-limiting examples, an atomic ratio of F to C may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp3hybridized C atoms present in the compound structure. In some non-limiting examples, the patterning material 2311 may comprise a compound that comprises, as part of its molecular sub-structure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1, 1.5, and 2.

[0592] In some non-limiting examples, the patterning material 2311 may comprise an organic-inorganic hybrid material.

[0593] In some non-limiting examples, the patterning material 2311 may comprise an oligomer.

[0594] In some non-limiting examples, the patterning material 2311 may comprise a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety, and the at least one functional group may be an organic moiety.1104864-9652-5787.1Atty. Dkt. No. 114246-0448

[0595] In some non-limiting examples, such compound may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of: a linear siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro-siloxanes, including without limitation, Example Material 6 and Example Material 9 (discussed below).

[0596] In some non-limiting examples, the compound may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non-limiting examples, the backbone may comprise a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro- silsesquioxane and fluoro-POSS, including without limitation, Example Material 8 (discussed below).

[0597] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of: phenyl, and naphthyl. In some nonlimiting examples, at least one C atom of an aryl group may be substituted by a heteroatom, which in some non-limiting examples may be at least one of: O, N, and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0598] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted hydrocarbon group, an unsubstituted1114864-9652-5787.1Atty. Dkt. No. 114246-0448 hydrocarbon group, a linear hydrocarbon group, a branched hydrocarbon group, and a cyclic hydrocarbon group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S.

[0599] In some non-limiting examples, the compound may have a molecular structure comprising a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of: a linear phosphazene group, a branched phosphazene group, and a cyclic phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. Non-limiting examples of such compound include fluoro-phosphazenes. A non-limiting example of such compound is Example Material 4 (discussed below).

[0600] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer comprising F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer comprising F. Non-limiting examples, of at least one of: fluoropolymers, and fluorooligomers, are those having the molecular structure of at least one of: Example Material 3, Example Material 5, and Example Material 7 (discussed herein).

[0601] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organo-metal complex. In some non-limiting examples, the organo-metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some non-limiting examples, the at least one ligand comprising F may comprise a fluoroalkyl group.

[0602] In some non-limiting examples, the patterning material 2311 may comprise a plurality of different materials.Initial Sticking Probability

[0603] In some non-limiting examples, the initial sticking probability of the patterning material 2311 may be determined by depositing such material as at least one of: a1124864-9652-5787.1Atty. Dkt. No. 114246-0448 film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, having sufficient thickness so as to mitigate / reduce any effects on the degree of inter-molecular interaction with the underlying layer 2610 upon deposition on a surface thereof. In some non-limiting examples, the initial sticking probability may be measured on a film / coating having a thickness of one of at least about: 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0604] In some non-limiting examples, at least one of the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may have an initial sticking probability against the deposition of the deposited material 2431, that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0605] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may have an initial sticking probability against the deposition of at least one of: Ag, and Mg that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0606] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may have an initial sticking probability against the deposition of a deposited material 2431 of one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02- 0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01- 0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.1134864-9652-5787.1Atty. Dkt. No. 114246-0448

[0607] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may have an initial sticking probability against the deposition of a plurality of deposited materials 2431 that is no more than a threshold value. In some non-limiting examples, such threshold value may be one of about: 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.

[0608] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may have an initial sticking probability that is no more than such threshold value against the deposition of a plurality of deposited materials 2431 selected from at least one of: Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterning coating 310 may exhibit an initial sticking probability of no more than such threshold value against the deposition of a plurality of deposited materials 2431 selected from at least one of: Ag, Mg, and Yb.

[0609] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under similar circumstances to the deposition of the patterning coating 310 within the device 2100, may exhibit an initial sticking probability against the deposition of a first deposited material 2431 of, including without limitation, below, a first threshold value, and an initial sticking probability against the deposition of a second deposited material 2431 of, including without limitation, below, a second threshold value. In some non-limiting examples, the first deposited material 2431 may be Ag, and the second deposited material 2431 may be Mg. In some non-limiting examples, the first deposited material 2431 may be Ag, and the second deposited material may be Yb. In some non-limiting examples, the first deposited material 2431 may be Yb, and the second deposited material 2431 may be Mg. In some non-limiting examples, the first threshold value may exceed the second threshold value.

[0610] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 310 for causing formation of a discontinuous layer 2160 of at least one particle structure 2150, upon the patterning coating 310 being subjected to a vapor flux1144864-9652-5787.1Atty. Dkt. No. 114246-04482432 of a deposited material 2431. In some non-limiting examples, the patterning coating 310 may exhibit a substantially low initial sticking probability such that a closed coating 2140 of the deposited material 2431 may be formed in the second portion 1902, which may be substantially devoid of the patterning coating 310, while the discontinuous layer 2160 of at least one particle structure 2150 having at least one characteristic may be formed in the first portion 1901 on the patterning coating 310. In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 2160 of at least one particle structure 2150 of a deposited material 2431, which may be, in some non-limiting examples, of one of: a metal, and a metal alloy, in the second portion 1902, while depositing a closed coating 2140 of the deposited material 2431 having a thickness of, for example, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, an amount of the deposited material 2431 deposited as a discontinuous layer 2160 of at least one particle structure 2150 in the first portion 1901 may correspond to one of between about: 1-50%, 2-25%, 5-20%, and 7-10% of the amount of the deposited material 2431 deposited as a closed coating 2140 in the second portion 1902, which in some non-limiting examples may correspond to a thickness of one of no more than about: 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0611] In some non-limiting examples, there may be a positive correlation between the initial sticking probability of at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 310 within the device 2100, against the deposition of the deposited material 2431, and an average layer thickness of the deposited material 2431 thereon.Transmittance

[0612] In some non-limiting examples, at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 310 within the device 2100, may have a transmittance for light of at least a threshold transmittance value, after being subjected to a vapor flux 2432 of the deposited material 2431, including without limitation, Ag.

[0613] In some non-limiting examples, such transmittance may be measured after exposing the exposed layer surface 11 of at least one of: the patterning coating 310 and the1154864-9652-5787.1Atty. Dkt. No. 114246-0448 patterning material 2311, formed as a thin film, to a vapor flux 2432 of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, under typical conditions that may be used for depositing an electrode of an opto-electronic device 2200, which in some non-limiting examples, may be a cathode of an organic light-emitting diode (OLED) device 2200.

[0614] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 2432 of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may comprise: maintaining a vacuum pressure at a reference pressure, including without limitation, of one of about: 10'4Torr and 10'5Torr; the vapor flux 2432 of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being substantially consistent with a reference deposition rate, including without limitation, of about 1 angstrom (A) / sec, which in some non-limiting examples, may be monitored using a QCM; the vapor flux 2432 of the deposited material 2431 being directed toward the exposed layer surface 11 at an angle that is substantially close to normal to a plane of the exposed layer surface 11; the exposed layer surface 11 being subjected to the vapor flux 2432 of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, until a reference average layer thickness, including without limitation, of about 15 nm, is reached, and upon such reference average layer thickness being attained, the exposed layer surface 11 not being further subjected to the vapor flux of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0615] In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 2432 of the deposited material 2431, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be substantially at room temperature (e.g. about 25°C). In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 2432 of the deposited material1164864-9652-5787.1Atty. Dkt. No. 114246-04482431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be positioned about 65 cm away from an evaporation source by which the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, is evaporated.

[0616] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum, which may be one of at least about: 460 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in at least one of: the IR, and NIR, spectrum. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength of one of about: 700 nm, 900 nm, and 1,000 nm. In some nonlimiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through a sample. In some non-limiting examples, the threshold transmittance value may be one of at least about: 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0617] It would be appreciated by a person having ordinary skill in the relevant art that high transmittance may generally indicate an absence of a closed coating 2140 of the deposited material 2431, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg. On the other hand, low transmittance may generally indicate presence of a closed coating 2140 of the deposited material 2431, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, since metallic thin films, particularly when formed as a closed coating 2140, may exhibit a high degree of absorption of light.

[0618] A series of samples was fabricated to measure the transmittance of an example material, as well as to visually observe whether a closed coating 2140 of Ag was formed on the exposed layer surface 11 of such example material. Each sample was prepared by depositing, on a glass substrate 10, an approximately 50 nm thick coating of an example material, then subjecting the exposed layer surface 11 of the coating to a vapor flux 2432 of Ag at a rate of about 1 A / sec until a reference layer thickness of about 15 nm was reached. Each sample was then visually analyzed and the transmittance through each sample was measured.1174864-9652-5787.1Atty. Dkt. No. 114246-0448

[0619] The molecular structures of the example materials used in the samples herein are set out in Table 2 below:Table 21184864-9652-5787.1Atty. Dkt. No. 114246-04481194864-9652-5787.1Atty. Dkt. No. 114246-04481204864-9652-5787.1Atty. Dkt. No. 114246-0448

[0620] Those having ordinary skill in the relevant art will appreciate that samples having little to no deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg, present thereon may be substantially transparent, while samples with substantial amounts of at least one of: a metal, and an alloy, deposited thereon, including without limitation, as a closed coating 2140, may in some non-limiting examples, exhibit a substantially reduced transmittance. Accordingly, the performance of various example coatings as a patterning coating 310 may be assessed by measuring transmission through the samples, which may be inversely correlated to at least one of: an amount, and an average layer thickness, of the deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being deposited thereon, since metallic thin films, including without limitation, when formed as a closed coating 2140, may exhibit a high degree of absorption of light.

[0621] The samples in which a substantially closed coating 2140 of a deposited material 2431, in the form of Ag, had formed were visually identified, and the presence of such closed coating 2140 in these samples was further confirmed by measurement of transmittance therethrough, which showed transmittance of no more than about 50% at a wavelength of about 460 nm.

[0622] In addition, for samples in which the absence of formation of a closed coating 2140 of a deposited material 2431, in the form of Ag, was identified, the absence of such closed coating 2140 in these samples was further confirmed by measurement of EM transmittance therethrough, which showed transmittance (of light at a wavelength of about 460 nm) of at least about 70%.

[0623] The results are summarized in Table 3 below:Table 31214864-9652-5787.1Atty. Dkt. No. 114246-0448

[0624] Based on the foregoing, it was found that the materials used in the first 7 samples (HT211 to Example Material 2) and Example Material 9 in Tables 12 and 13 may have reduced applicability in some scenarios for inhibiting the deposition of the deposited material 2431 thereon, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0625] On the other hand, it was found that Example Material 3 to Example Material 8 may have applicability in some scenarios, to act as a patterning coating 310 for inhibiting the deposition of the deposited material 2431 including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, thereon.Deposition Contrast

[0626] In some non-limiting examples, a material, including without limitation, a patterning material 2311, that may function as an NIC for a given at least one of: a metal,1224864-9652-5787.1Atty. Dkt. No. 114246-0448 and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, may have a substantially high deposition contrast when deposited on a substrate 10.

[0627] In some non-limiting examples, if a substrate 10 tends to act as a nucleationpromoting coating (NPC) 2620, and a portion thereof is coated with a material, including without limitation, a patterning material 2311, that may tend to function as an NIC against deposition of a deposited material 2431, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg, a coated portion (first portion 1901) and an uncoated portion (second portion 1902) may tend to have different at least one of: initial sticking probabilities, and nucleation rates, such that the deposited material 2431 deposited thereon may tend to have different average film thicknesses.

[0628] As used herein, a quotient of an average film thickness of the deposited material 2431 deposited in the second portion 1902 divided by the average film thickness of the deposited material in the first portion 1901 in such scenario may be generally referred to as a deposition contrast. Thus, if the deposition contrast is substantially high, the average film thickness of the deposited material 2431 in the second portion 1902 may be substantially greater than the average film thickness of the deposited material 2431 in the first portion 1901.

[0629] In some non-limiting examples, a material, including without limitation, a patterning material 2311, that may function as an NIC for a given deposited material 2431, may have a substantially high deposition contrast when deposited on a substrate 10.

[0630] In some non-limiting examples, there may be a negative correlation between the initial sticking probability of at least one of: the patterning coating 310, and the patterning material 2311, in some non-limiting examples, when deposited as at least one of: a film, and a coating, in a form, and under circumstances similar to the deposition of the patterning coating 310 within the device 2100, against the deposition of the deposited material 2431 and a deposition contrast thereof, that is, a low initial sticking probability may be highly correlated with a high deposition contrast.

[0631] In some non-limiting examples, if the deposition contrast is substantially high, there may be little to no deposited material 2431 deposited in the first portion 1901, when there is sufficient deposition of the deposited material 2431 to form a closed coating 2140 thereof in the second portion 1902.1234864-9652-5787.1Atty. Dkt. No. 114246-0448

[0632] In some non-limiting examples, if the deposition contrast is substantially low, there may be a discontinuous layer 2160 of at least one particle structure 2150 of the deposited material 2431 deposited in the first portion 1901, when there is sufficient deposition of the deposited material 2431 to form a closed coating 2140 in the second portion 1902.

[0633] In some non-limiting examples, there may be scenarios calling for the formation of a discontinuous layer 2160 of at least one particle structure 2150 of the deposited material 2431, in the first portion 1901, when an average layer thickness of a closed coating 2140 of the deposited material 2431 in the second portion 1902 is substantially small, including without limitation, one of no more than about: 100 nm, 50 nm, 25 nm, and 15 nm, including without limitation, the formation of nanoparticles (NPs) in the first portion 1901, where absorption of light by such NPs is called for, including without limitation, to protect an underlying layer 2610 from light having a wavelength of no more than about 460 nm.

[0634] In some non-limiting examples, in such scenarios, there may be applicability for a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15.

[0635] In some non-limiting examples, a material, including without limitation, a patterning material 2311, having a substantially low deposition contrast against deposition of a deposited material 2431, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, where the average layer thickness of the deposited material 2431 in the first portion 1901 is large, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm.

[0636] In some non-limiting examples, a material, including without limitation, a patterning material 2311, having a substantially low deposition contrast against deposition of a deposited material 2431, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, scenarios calling for at least one of: the substantial absence of a closed coating 2140, and a high density of, particle structures 2150 in the first portion 1901, including without limitation, when an average layer thickness of the deposited material 2431 in the second portion 1902 is large, including without limitation, one of at least about: 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, including without limitation, in some scenarios calling for the substantial absence of absorption of light in at least one of the visible spectrum and the NIR spectrum, including without1244864-9652-5787.1Atty. Dkt. No. 114246-0448 limitation, scenarios calling for an increased transparency to light having a wavelength that is at least about 460 nm.

[0637] In some non-limiting examples, a material, including without limitation, a patterning material 2311, having a substantially low deposition contrast against the deposition of a deposited material 2431, may have applicability in some scenarios calling for at least one of: a discontinuous layer 21...

Claims

1. Atty. Dkt. No. 114246-044819. The electronic device of claim 18, wherein the second opto-electronic component is the transmitter.

20. The electronic device of any one of claims 1 to 16, wherein the first opto-electronic component is an under-display camera.

21. The electronic device of claim 13, wherein at least a part of at least one transmissive region of at least one of: the first signal-exchanging part, and the second signal-exchanging part, has, deposited thereon, a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon.

22. The electronic device of claim 21, wherein the at least one transmissive region comprises a first portion that has a first transmittance, and a second portion that has a second transmittance, the transmittance being at least that of the second transmittance.

23. The electronic device of claim 22, wherein the patterning coating is deposited at least in the first portion.

24. The electronic device of claim 1, wherein: the first opto-electronic component is adapted to generate a first output that contains diffracted information correlated with the first PSF, the second opto-electronic component is adapted to generate a second output that contains diffracted information correlated with the second PSF, and the device comprises a processor adapted to process the first output and the second output to produce a processed output .

25. The electronic device of claim 24, wherein the processor is adapted to apply a correction to the: first, and second, output, to generate a first corrected output and a second corrected output.

26. The electronic device of claim 24 or 25, wherein the correction comprises diffraction correction.3014864-9652-5787.1Atty. Dkt. No. 114246-044827. The electronic device of claim 26, wherein the diffraction correction corrects diffraction contained in the output of one of the: first, and second, opto-electronic component using the PSF of the other of the: first, and second, opto-electronic component.

28. The electronic device of any one of claims 25 to 27, wherein the processor is adapted to produce the processed output by combining the first corrected output and the second corrected output.

29. The electronic device of any one of claims 25 to 28, wherein the processed output is displayed by the display panel.

30. The electronic device of any one of claims 25 to 29, wherein the processed output comprises at least one of: an image file, a video file, a 3D image, and a 3D video.

31. A display panel comprising: a display part comprising a plurality of emissive regions, a first signal-exchanging part and a second signal-exchanging part, each comprising: a plurality of emissive regions, each corresponding to a (sub-) pixel; and a plurality of transmissive regions that allows light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and near-infrared (NIR), spectrum to pass therethrough, each transmissive region being disposed between adjacent emissive regions in a lateral aspect of the display panel, wherein: each of the: first, and second, signal-exchanging part, has associated therewith, a point spread function (PSF) comprising: a main, and at least one side, lobe, a layout of the transmissive regions of the first signal-exchanging part is different from a layout of the transmissive regions of the second signal-exchanging part, such that a first PSF associated with the first signal-exchanging part is different from a second PSF associated with the second signal-exchanging part, in at least one of a(n): distribution, and intensity, of at least one of the: main, and at least one side, lobe.3024864-9652-5787.1Atty. Dkt. No. 114246-044832. The electronic device of claim 31, wherein a side-lobe pattern of the first PSF is substantially devoid of a side lobe that overlaps with a side-lobe pattern of the second PSF.

33. The electronic device of claim 31, wherein a side-lobe pattern of the first PSF at least partially overlaps with a side-lobe pattern of the second PSF.

34. The electronic device of claim 31 or 33, wherein a first subset of the at least one side lobe of the first PSF at least partially overlaps with one of: all, and a subset, of the side lobes of the second PSF.

35. The electronic device of claim 34, wherein a second subset of the at least one side lobe of the first PSF is substantially devoid of a side lobe that overlaps with any side lobe of the second PSF.

36. The electronic device of any one of claims 31, 33 to 35, wherein each side lobe of one of the: first, and the second, PSF, corresponds to and at least partially overlaps with, a side lobe of the other of the: first, and second, PSF.

37. The electronic device of any one of claims 31 to 36, wherein the overlap between the side-lobe pattern of the first PSF and the side-lobe pattern of the second PSF is one of no more than about: 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

38. The electronic device of any one of claims 31 to 37, wherein an intensity of the at least one side lobe of the first PSF differs from an intensity of the at least one side lobe of the second PSF, in at least one of: a profile, and an intensity level.

39. The electronic device of any one of claims 31 to 38, wherein the main lobe of the first PSF at least partially overlaps with a side lobe of the second PSF.

40. The electronic device of any one of claims 31 to 39, wherein a distribution of the main lobe of the first PSF differs from a distribution of the main lobe of the second PSF.3034864-9652-5787.1Atty. Dkt. No. 114246-044841. The electronic device of any one of claims 31 to 40, wherein the main lobe of the first PSF differs from the main lobe of the second PSF, in at least one of: a profile, and an intensity level.

42. The electronic device of any one of claims 31 to 41, wherein the layout of the transmissive regions of each signal-exchanging part is characterized by at least one of a: size, shape, orientation, and pitch, thereof.

43. The electronic device of any one of claims 31 to 42, wherein at least a part of at least one transmissive region of at least one of the: first, and second, signal-exchanging part, has deposited thereon, a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon.

44. The electronic device of claim 43, wherein the at least one transmissive region comprises a first portion that has a first transmittance, and a second portion that has a second transmittance, the first transmittance being at least that of the second transmittance.

45. The electronic device of claim 44, wherein the patterning coating is deposited at least in the first portion.

46. A method for operating an electronic device comprising a display panel, and a first opto-electronic component and a second opto-electronic component, each opto-electronic component being adapted to at least one of: emit, and receive, light in a wavelength spectrum that lies within at least one of a: visible, infrared (IR), and near-infrared (NIR), spectrum, and generate an output that contains diffracted information correlated with a point spread function (PSF) thereof, wherein: the first opto-electronic component is arranged behind a first signal-exchanging part comprising a plurality of transmissive regions of the display panel, such that a first PSF associated with the first opto-electronic component comprises a component associated with a layout of the transmissive regions of the first signal-exchanging part, and differs from a second PSF associated with the second opto-electronic component, the method comprising actions of:3044864-9652-5787.1Atty. Dkt. No. 114246-0448 processing a first output of the opto-electronic component and a second output of the opto-electronic component to produce a processed output.

47. The method of claim 46, wherein the second opto-electronic component is arranged behind a second signal-exchanging part comprising a plurality of transmissive regions of the display panel, such that a second PSF associated with the second opto-electronic component comprises a component associated with a layout of the transmissive regions of the second signal-exchanging part.

48. The method of claims 46 or 47, wherein the action of processing comprises processing the output of one of the first opto-electronic component and the second optoelectronic component using the PSF of the other of the first opto-electronic component and the second opto-electronic component.

49. The method of claims any one of claims 46 to 48, wherein the action of processing comprises an action of correcting the first output and the second output to generate a first corrected output and a second correct output.

50. The method of claim 49, wherein the action of correcting comprises diffraction correction.

51. The method of any one of claims 48 to 50, wherein the diffraction correction corrects diffraction contained in the output of one of the first opto-electronic component and the second opto-electronic component using the PSF of the other of the first opto-electronic component and the second opto-electronic component.

52. The method of any one of claims 48 to 51, wherein the action of correcting is performed separately for each of the first output and the second output.

53. The method of any one of claims 48 to 52, wherein the action of correcting is performed by cross-referencing the first output with the second output.3054864-9652-5787.1Atty. Dkt. No. 114246-044854. The method of any one of claims 50 to 53, wherein the action of processing comprises an action of combining the first corrected output and the second correct output to generate a combined output.

55. The method of claim 54, wherein the action of combining comprises combining the first corrected output and the second corrected output by at least one of a: fusion, and stitching, process.

56. The method of any one of claims 48 to 55, wherein the action of correcting is preceded by an action of pre-processing the first output and the second output.

57. The method of any one of claims 48 to 56, wherein the action of combining is followed by an action of post-processing the combined output.

58. The method of any one of claims 46 to 59 comprising an action of displaying the processed output on the display panel.

59. The method of any one of claims 46 to 58, wherein the processed output comprises at least one of: an image file, a video file, a 3D image, and a 3D video.

60. The method of any one of claims 46 to 59, wherein at least one of the first optoelectronic component, and the second opto-electronic component, comprises at least one of: a transmitter adapted to emit light, and a receiver adapted to receive light.

61. The method of claim 60, wherein the second opto-electronic component is a non under-display component.

62. The method of claim 61, wherein the second opto-electronic component is the transmitter.3064864-9652-5787.1Atty. Dkt. No. 114246-044863. The method of any one of claims 46 to 62, wherein the first opto-electronic component is an under-display camera.3074864-9652-5787.1

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