Display device

Abstract

A display device comprising at least a light-emitting diode (a), a cured film (b), a wiring (c), and a film (d) containing a metal. The display device includes a structure in at least two or more places such that the light-emitting diode (a) is electrically connected to the wiring (c), the cured film (b) is obtained from a resin composition containing a resin (A), and the wiring (c) has a three-dimensional shape including at least two or more planes, and that the film (d) containing a metal covers at least part of the surface of the wiring (c), and the cured film (b) covers at least part of the surface of the film (d) containing a metal.　A display device such as an LED display equipped with a light-emitting diode and capable of suppressing deterioration of light emission characteristics in a high temperature environment can be provided.

Description

display device

[0001] The present invention relates to a display device such as an LED display equipped with a light-emitting diode.

[0002] To achieve high-speed transmission and miniaturization of semiconductor devices, cured films made of materials capable of forming wiring patterns by exposure or cured films for protecting wiring by filling spaces between wiring in a fine pattern are used to form fine patterns. Furthermore, as electronic devices become more powerful, semiconductor elements are becoming increasingly highly integrated and reliable. The increasing integration of semiconductor elements requires the formation of even finer wiring patterns, and the importance of insulating reliability between fine wiring is increasing. To improve the reliability of fine wiring, for example, it has been disclosed that a barrier metal layer is formed on the wiring to prevent copper from diffusing from a copper film used in the wiring into a polyimide resin layer, which is an insulating film, thereby suppressing the occurrence of wiring migration and corrosion.

[0003] Furthermore, in recent years, in order to further improve the performance of displays, LED displays, which are constructed by arranging light-emitting diodes (hereinafter sometimes referred to as LEDs) in the same number as the number of pixels, have been attracting attention as a new display technology following liquid crystal displays, plasma displays, and organic electroluminescent (EL) displays. In particular, mini-LED displays, which have reduced the size of the LEDs that serve as light sources from the conventional 1 mm to 100-700 μm, and micro-LED displays, which have been miniaturized to 100 μm or less, have been attracting attention and are the subject of active research and development. Key features of mini-LED displays and micro-LED displays include high contrast, fast response, low power consumption, and a wide viewing angle. They are expected to be used not only in traditional wearable displays such as televisions, smartphones, and smartwatches, but also in a wide range of promising new applications such as signage, AR, VR, and even transparent displays capable of displaying spatial images.

[0004] Patent Document 1 describes an organic EL display device in which an insulating layer formed on a first electrode is a cured film obtained from a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) an o-quinone diazide compound, and (C) an organic solvent, and the molar ratio S / C obtained when a cross section of the cured film is measured is 0.003 or more and 0.008 or less. It discloses that this prevents the organic EL display device from experiencing a decrease in luminance or pixel shrinkage and has excellent long-term reliability.

[0005] Furthermore, Patent Document 2 describes a resin composition containing (a) an alkali-soluble resin including polyimide, polybenzoxazole, polyamideimide, or a precursor of any of these and / or a copolymer thereof, and (b) an alkali-soluble resin having a monovalent or divalent group represented by the following general formula (1) in its structural unit, wherein the modification rate of the phenolic hydroxyl groups in the alkali-soluble resin (b) is 5 to 50%. It discloses that this resin composition has high chemical resistance and can suppress the generation of outgassing after curing, even when baked at a low temperature of 250°C or less.

[0006] Furthermore, Patent Document 3 describes a semiconductor device having a plurality of wiring layers formed on a semiconductor substrate, rewirings formed on an underlying metal film, and a cap metal film formed so as to cover the upper and side surfaces of the rewirings, wherein the underlying metal film is formed between the cap metal film formed on the sidewalls of the rewirings and the insulating film in a region outside the rewirings, and the underlying metal film and the cap metal film are in direct contact with each other in the region outside the rewirings. Patent Document 3 discloses an effect that first and second organic protective films covering the rewirings made of Cu are made of polyimide films and contain moisture and halogen ions, which oxidize the surface of the Cu constituting the rewirings, resulting in the generation of Cu ions (ionized Cu), which can prevent a decrease in the breakdown voltage or a short circuit between adjacent rewirings, thereby preventing a decrease in the reliability of the semiconductor device.

[0007] International Publication No. WO 2016 / 047483 International Publication No. WO 2018 / 084149 International Publication No. WO 2016 / 075791

[0008] However, the configurations described in the above documents do not suggest a display device such as an LED display equipped with a light-emitting diode, and are considered to be insufficient in suppressing the deterioration of light-emitting characteristics in a high-temperature environment.

[0009] In view of the above problems with the prior art, an object of the present invention is to provide a display device such as an LED display equipped with a light-emitting diode capable of suppressing deterioration in light-emitting characteristics in a high-temperature environment.

[0010] In order to solve the above problems, the present invention has the following configuration. [1] A display device comprising at least a light-emitting diode (a), a cured film (b), wiring (c), and a metal-containing film (d), wherein the light-emitting diode (a) is electrically connected to the wiring (c), the cured film (b) is obtained from a resin composition containing a resin (A), the wiring (c) has a three-dimensional shape having at least two planes, the metal-containing film (d) covers at least a portion of a surface of the wiring (c), and the cured film (b) has a structure covering at least a portion of a surface of the metal-containing film (d) in at least one location. [2] The display device according to [1], wherein the weight loss rate (M1-M2) / M1 of the cured film (b), measured under the following measurement condition 1, is 0.015 or less. [Measurement Condition 1] Using a thermogravimetric analyzer, the temperature is raised from 120°C at a heating rate of 10°C / min to 250°C, and M1 is the weight of the cured film (b) when it reaches that temperature, and M2 is the weight of the cured film (b) after maintaining it at 250°C for 1 hour. [3] The display device according to [1] or [2], further comprising a metal-containing film (d1), wherein the metal-containing film (d1) is in contact with at least a portion of the underside of the wiring (c) and has at least one or more portions having a layered structure in which the cured film (b), the metal-containing film (d1), the wiring (c), and the metal-containing film (d) are layered in this order. [4] The display device according to [1] or [3], wherein the opening of the cured film (b) has a forward tapered shape. [5] The display device according to [1] or [3], further comprising a metal-containing film (d2), wherein the metal-containing film (d2) covers at least a portion of a surface of the light-emitting diode (a) other than the light extraction surface in at least one location. [6] The display device according to [1] or [3], wherein at least one connection site between an electrode of the light-emitting diode (a) and the wiring (c) has a site where the metal-containing film (d) and / or the metal-containing film (d1) is interposed between the electrode and the wiring (c). [7] The display device according to [1] or [3], wherein at a wiring layer having a plurality of layers comprising the wiring (c) and the cured film (b), the metal-containing film (d) and / or the metal-containing film (d1) is interposed between the wirings (c) in at least one connection site between the wirings (c).[8] The display device according to [1] or [3], wherein at a connection portion between an electrode of the light-emitting diode (a) and the wiring (c), the electrode and the wiring (c) are connected, and the periphery of the connection portion between the electrode and the wiring (c) has at least one or more portions where the metal-containing film (d) and / or the metal-containing film (d1) is formed. [9] The display device according to [1] or [3], wherein in a wiring layer having a plurality of layers including the wiring (c) and the cured film (b), the wirings (c) are connected, and the periphery of the connection portion between the wirings (c) has at least one or more portions where the metal-containing film (d) and / or the metal-containing film (d1) is formed.

[10] The display device according to [1] or [3], wherein the wiring (c) and the metal-containing film (d) are made of different main components.

[11] A display device comprising at least a light-emitting diode (a), a cured film (b), wiring (c), and a metal-containing film (d2), wherein the cured film (b) is obtained from a resin composition containing a resin (A), and the metal-containing film (d2) has a structure in at least one location covering at least a portion of a surface of the light-emitting diode (a) other than the light extraction surface.

[12] The display device according to [1] or [3], wherein the length of one side of the light-emitting diode (a) is 5 μm or more and 700 μm or less.

[13] The display device according to [1] or [3], wherein the resin (A) contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof.

[14] The display device according to [1] or [3], wherein the resin composition containing the resin (A) further contains a photosensitizer (B).

[15] The display device according to [1] or [3], wherein the resin composition containing the resin (A) further contains a thermal crosslinking agent (C), and the amount of the thermal crosslinking agent (C) is 1 part by mass or more and 50 parts by mass or less per 100 parts by mass of the resin (A).

[16] The display device according to

[14] , wherein the thermal crosslinking agent (C) at least contains a compound (C1) having an alkoxymethyl group or a methylol group.

[0011] It is possible to provide a display device such as an LED display equipped with a light-emitting diode capable of suppressing deterioration of light-emitting characteristics in a high-temperature environment.

[0012] [Correction based on Rule 91 27.02.2025] A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a first embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a second embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a third embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a fourth embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a fifth embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a sixth embodiment of a display device of the present invention. A cross-sectional view showing an enlarged view of designated region (J) 12 in FIG. 2. A cross-sectional view showing an enlarged view of designated region (K) 13 in FIG. 2. A cross-sectional view showing an enlarged view of designated region (N) 16 in FIG. 3. A cross-sectional view taken along a plane perpendicular to the substrate, showing an opening pattern of a cured film (b). A cross-sectional view taken along a plane perpendicular to the substrate, showing a manufacturing process of an embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing a manufacturing process of an embodiment of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing another example of a manufacturing process of a display device of the present invention. A cross-sectional view taken along a plane perpendicular to the substrate, showing an example of a seventh embodiment of a display device of the present invention. 13-1 in the seventh embodiment. A cross-sectional view in a plane perpendicular to the substrate showing an example of an eighth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a ninth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a ninth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a ninth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a tenth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a tenth embodiment of the display device of the present invention. A cross-sectional view in a plane perpendicular to the substrate showing an example of a tenth embodiment of the display device of the present invention.

[0013] Preferred embodiments of the display device of the present invention will be specifically described below, but the present invention is not limited to the following embodiments and can be modified and implemented in various ways depending on the purpose and application.

[0014] The display device D of the present invention is a display device 1 comprising at least a light-emitting diode (a) 2, a cured film (b) 3, wiring (c) 4, and a metal-containing film (d) 9, wherein the light-emitting diode (a) 2 is electrically connected to the wiring (c) 4, the cured film (b) 3 is obtained from a resin composition containing a resin (A), the wiring (c) 4 has a three-dimensional shape having at least two planes, the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, and the cured film (b) 3 has a structure covering at least a portion of the surface of the metal-containing film (d) 9 in one or more places.

[0015] In the following description, unless the first embodiment or the second and subsequent embodiments described below are specifically specified, the description applies to these embodiments. The correspondence between each claim and each embodiment is as follows: Claim 1: First to sixth embodiments, Claim 3: Second to sixth embodiments, Claim 4: Second to sixth embodiments, Claim 5: Seventh to tenth embodiments, Claim 6: Second and fourth embodiments, Claim 7: Second and fourth embodiments, Claim 8: Third, fifth and sixth embodiments, Claim 9: Third, fifth and sixth embodiments, Claim 11: Seventh to tenth embodiments.

[0016] A display device according to a first embodiment of the present invention will be described with reference to FIG. 1 as an example.

[0017] In FIG. 1, the display device D has wiring (c) 4a formed on a substrate 5, a metal-containing film (d) 9 covering the upper and side surfaces of the wiring (c) 4a, a light-emitting diode (a) 2 having a pair of electrodes 6 arranged on the metal-containing film (d) 9, and the wiring (c) 4 electrically connected to the electrode 6. Furthermore, the wiring (c) 4 has a three-dimensional shape having at least two planes, and a metal-containing film (d) 9 covering at least a portion of the surface of the wiring (c) 4 is formed. FIG. 1 illustrates a configuration in which three such layer structures are stacked. The cured film (b) 3 is configured to cover at least a portion of the surface of the metal-containing film (d) 9. In FIG. 1, at the connection portion between the wirings (c) 4, there is at least one portion where the metal-containing film (d) 9 is interposed between the wirings (c) 4.

[0018] When the wiring (c) 4 extending in the cured film (b) 3 is in contact with and covered by the cured film (b) 3, the cured film (b) 3 also functions as an insulating film, and thus the wiring (c) 4 is configured to maintain electrical insulation.

[0019] The term "having a configuration that maintains electrical insulation" means that the portion of the wiring (c) 4 that requires electrical insulation is covered with a cured film (b) 3 formed by curing a resin composition containing the resin (A).

[0020] Furthermore, in a configuration in which the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, the metal-containing film (d) 9 may be interposed between the wiring (c) 4 and the cured film (b) 3. By covering the surface of the metal-containing film (d) 9 with the cured film (b) 3, the wiring (c) 4 and the metal-containing film (d) 9 are configured to maintain electrical insulation. This configuration is sometimes referred to as a non-contact covering configuration.

[0021] The wiring (c) 4 formed on the electrode 6 or the cured film (b) 3 has a three-dimensional shape having at least two or more planes. The three-dimensional shape having at least two or more planes preferably has at least one pair of parallel surfaces, such as a cylinder, a tetrahedron, a hexahedron such as a rectangular parallelepiped or a cube, or an octahedron. However, the three-dimensional shape is not limited to such regular shapes and also includes shapes in which the vertices or edges of these shapes are chamfered, and shapes based on these shapes that have recesses, grooves, or steps. Here, a deviation of plus or minus 5° is considered parallel, and parallel surfaces or other surfaces may have irregularities. The metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4. This metal-containing film (d) 9 can prevent corrosion due to migration of the wiring (c) 4 to the cured film (b) 3, oxidation of the wiring (c) 4 due to external oxygen or moisture, or outgassing from the cured film (b) 3, even in high-temperature environments. This can suppress deterioration of the light-emitting characteristics of the light-emitting diode. The high temperature environment refers to an environment of 60°C or higher and 175°C or lower.

[0022] Here, the light-emitting diode (a) preferably has a polyhedral three-dimensional shape. A polyhedral three-dimensional shape is a three-dimensional shape having multiple faces, preferably having at least one pair of parallel faces. Examples include tetrahedrons, hexahedrons such as rectangular parallelepipeds and cubes, and octahedrons. However, the polyhedral three-dimensional shape is not limited to these regular shapes, and also includes shapes in which the vertices or edges of these shapes are chamfered, and shapes based on these shapes that have recesses, grooves, or steps. Here, a deviation of plus or minus 5° is considered parallel, and the parallel faces or other faces may have irregularities. The light-emitting diode may have electrodes on two different faces. Having electrodes on two different faces means that, in a polyhedral three-dimensional light-emitting diode, one of the faces having electrodes is considered a reference plane, and the other electrodes are each on a face different from the reference plane. Here, the reference plane refers to a continuous surface within the polyhedral three-dimensional shape. Even if a surface exists on the same spatial plane, a surface separated by a groove within the polyhedral three-dimensional shape is considered a different face from the reference plane. Furthermore, when focusing on one light-emitting diode, the electrodes provided on the two different surfaces may be referred to as a pair of electrodes. Furthermore, the light-emitting diode may have a pair of electrodes on either one of its surfaces.

[0023] In the present invention, the electrodes provided on the light-emitting diode (a) refer to connection sites for transmitting signals for controlling the light emission of the light-emitting diode from wiring to the light-emitting diode.

[0024] 1 , when focusing on one light-emitting diode, each light-emitting diode (a) 2 having a polyhedral three-dimensional shape has one electrode on the surface connected to the wiring (c) 4 extending in the cured film (b) 3, and the other electrode on the surface facing the substrate 5. When viewed as a whole, one electrode of the pair of electrodes provided on each of the plurality of light-emitting diodes (a) 2 is connected to each of the plurality of wirings (c) 4 extending in the cured film (b) 3.

[0025] 1 illustrates a configuration in which a total of three layers are laminated by laminating a plurality of cured films (b) 3 on the cured film (b) 3 arranged so as to be in contact with at least a portion of the light-emitting diode (a) 2, but the cured film (b) 3 may be a single layer. The light-emitting diode (a) 2 has electrodes 6 on two different surfaces, and one of the pair of electrodes 6 is connected to a wiring (c) 4 extending in the cured film (b) 3.

[0026] Of the pair of electrodes 6, the other electrode 6 that is not connected to the wiring (c) 4 extending in the cured film (b) 3 is connected to wiring (c) 4a. The wiring (c) 4a may be formed on a substrate 5. The electrode 6 and the wiring (c) 4 may be connected via a bump or a conductive film, or may be connected directly.

[0027] Furthermore, the wiring (c) 4 and the metal-containing film (d) 9 may be covered with the cured film (b) 3 to maintain electrical insulation, or the cured film (b) 3, the wiring (c) 4, and the metal-containing film (d) 9 may form a laminate structure of two or more layers. The wiring (c) 4 and the metal-containing film (d) 9 may be connected to the wiring (c) 4 extending in the cured film (b) 3 arranged so as to contact at least a portion of the light-emitting diode (a) 2 through a through electrode or the like, or may be connected to the wiring (c) 4 extending in the cured film (b) 3 by arranging side wiring 27 on the side of the light-emitting diode (a) 2 or the side of the partition wall described below, or may be connected to the light-emitting diode drive substrate 7. Furthermore, the light-emitting diode (a) 2 is electrically connected to a drive element 8 attached to the light-emitting diode drive substrate 7 provided in a position opposite the substrate 5 through the wiring (c) 4, the metal-containing film (d) 9, and the side wiring 27, thereby controlling the light emission of the light-emitting diode (a) 2. The light-emitting diode drive substrate 7 is electrically connected to the wiring (c) 4 and the metal-containing film (d) 9 via bumps 10, for example.

[0028] 1 illustrates an example in which wiring (c) 4a, an electrode 6, and a metal-containing film (d) 9 are disposed between the substrate 5 and the light-emitting diode (a) 2, and further, a cured film (b) 3 is disposed between the substrate 5 and the light-emitting diode (a) 2 adjacent to the wiring (c) 4 and the electrode 6. However, the first embodiment also includes a configuration in which the wiring (c) 4 and the electrode 6 are formed so as to cover the entire flat surface of the light-emitting diode (a) 2, and the cured film (b) 3 is not disposed between the substrate 5 and the light-emitting diode (a) 2. Furthermore, when the wiring (c) 4 and the electrode 6 shown in FIG. 1 are formed as thin films, the resin film 21 described below cannot reach adjacent to the wiring (c) 4 and the electrode 6, and the cured film (b) 3 is not formed between the substrate 5 and the light-emitting diode (a) 2, resulting in a partial cavity.

[0029] In the present invention, the light emitting diode driving substrate 7 may be a substrate having an element with a driving function, and preferably has a driving element 8 connected thereto.

[0030] The light-emitting diode drive substrate 7 is not particularly limited, and known substrates can be used. Examples include glass substrates, sapphire substrates, printed wiring boards, TFT array substrates, and ceramics. Wiring may be formed on at least one surface of the glass substrate or sapphire substrate. When a printed wiring board is used, connection to the drive elements 8, bumps 10, wiring (c) 4, etc. can be made without forming side wiring 27.

[0031] A display device according to a second embodiment of the present invention will now be described with reference to Fig. 2. As shown in designated area (J) 12 indicated by a dashed line in Fig. 2, the metal-containing film (d) 9 or the metal-containing film (d1) 9a preferably covers or contacts at least a portion of the surface of the wiring (c) 4, i.e., the upper, side, or lower surface, at least in one location. Furthermore, as shown in designated area (K) 13 indicated by a dashed line in Fig. 2, the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a preferably interposes itself between the electrode 6 and the wiring (c) 4 at at least one location at the connection between the electrode 6 and the wiring (c) 4. Furthermore, as shown in a designated region (L) 14 indicated by a dashed line, in a wiring layer having a plurality of layers each including a wiring (c) 4 and a cured film (b) 3, it is preferable that the wiring layer has at least one or more portions in which a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is interposed between the wirings (c) 4 at connection portions between the wirings (c) 4.

[0032] 2, 4, 14, etc. show a configuration in which cured films (b) 3 having extending wiring (c) 4 are stacked, and the wiring (c) 4 in one cured film (b) 3 is connected to the wiring (c) 4 in another cured film (b) 3, and the wiring layer refers to the cured film (b) 3 having extending wiring (c) 4.

[0033] The metal-containing film (d) 9 and the metal-containing film (d1) 9a cover or are in contact with at least a portion of the surface of the wiring (c) 4, i.e., the upper surface, side surface, or lower surface, so that even in a high-temperature environment, it is possible to prevent corrosion due to migration of the wiring (c) 4 to the cured film (b) 3, oxidation of the wiring (c) 4 due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3. Therefore, it is possible to suppress deterioration in the light-emitting characteristics of the light-emitting diode (a) 2.

[0034] A third embodiment of the display device of the present invention will be described with reference to Fig. 3. In Fig. 3, as shown in the designated area (M) 15 of the dashed line, at the connection portion between the electrode 6 and the wiring (c) 4a of the light-emitting diode (a) 2, the electrode 6 and the wiring (c) 4a are connected, and the periphery of the connection portion between the electrode 6 and the wiring (c) 4a has at least one or more portions where a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is formed. Also, as shown in the designated area (N) 16 of the dashed line, in a wiring layer having a plurality of layers including the wiring (c) 4 and the cured film (b) 3, the wirings (c) 4 are connected, and the periphery of the connection portion between the wirings (c) 4 has at least one or more portions where a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a is formed.

[0035] This allows the connection between the wiring (c) 4 and the electrode 6 or between the wiring (c) 4 to be made directly without the metal-containing film (d) 9 interposed therebetween, thereby preventing an increase in resistance due to the metal-containing film (d) 9 and suppressing electrical loss.

[0036] A fourth embodiment of the display device of the present invention will be described with reference to FIG. 4 as an example. In FIG. 4, the display device D has a light-emitting diode (a) 2 provided with a pair of electrodes 6 on the surface opposite to the surface in contact with the substrate 5, and each electrode 6 is connected to a wiring (c) 4 extending in the cured film (b) 3. The light-emitting diode (a) 2 is disposed on the substrate 5, and a cured film (b) 3 is disposed on the light-emitting diode (a) 2. "On the light-emitting diode" does not necessarily mean the surface of the light-emitting diode (a) 2, but may also mean the upper side of the substrate 5 or the light-emitting diode (a) 2. The embodiment shown in FIG. 4 illustrates a configuration in which multiple layers of another cured film (b) 3 are laminated on the cured film (b) 3 disposed so as to contact at least a portion of the light-emitting diode (a) 2. As in FIG. 2 , the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a cover or are in contact with at least a portion of the surface of the wiring (c) 4, i.e., the upper surface, side surface, or lower surface, and at least one or more portions are provided between the electrode 6 of the light-emitting diode (a) 2 and the wiring (c) 4 at the connection portion between the electrode 6 and the wiring (c) 4, and when the wirings (c) 4 are connected to each other, at least one or more portions are provided between the wirings (c) 4 at the connection portion between the connecting wirings (c) 4 at the time of connection, and

[0037] [Correction based on Rule 91 27.02.2025] A display device according to a fifth embodiment of the present invention will be described with reference to Fig. 5. In Fig. 5, a display device D, similar to Fig. 4, has a configuration in which a light-emitting diode (a) 2 has a pair of electrodes 6 on a surface opposite to the surface in contact with a substrate 5, and at a connection portion between the electrode 6 of the light-emitting diode (a) 2 and a wiring (c) 4, the electrode 6 and the wiring (c) 4 are connected, and at least one or more portions around the connection portion between the wiring (c) 4 and the electrode 6 and the wiring (c) 4 are formed with a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a, and the wirings (c) 4 are connected to each other, and at least one or more portions around the connection portion between the wirings (c) 4 are formed with a metal-containing film (d) 9 and / or a metal-containing film (d1) 9a. Furthermore, it is preferable that the metal-containing film (d) 9 covers the surface of a part of the wiring (c) 4, covers a part of the electrode 6 attached to the light-emitting diode (a) 2, and also covers the periphery of the electrode 6 and the wiring (c) 4 electrically connected to the electrode 6.

[0038] As an example different from the fifth embodiment, a display device according to a sixth embodiment in which a wiring layer is formed and then light-emitting diodes (a) 2 are arranged will be described with reference to Fig. 6. In the first to fifth embodiments, the wiring layer is formed after the light-emitting diodes (a) 2 are arranged, but the light-emitting diodes (a) 2 may be arranged after the wiring layer is formed as in the sixth embodiment.

[0039] In the display device of the present invention, the weight loss rate (M1-M2) / M1 of the cured film (b) 3 measured under the following measurement condition 1 is preferably 0.015 or less.

[0040] [Measurement Condition 1] Using a thermogravimetric analyzer, the temperature is raised from 120°C at a heating rate of 10°C / min. The weight of the cured film (b) when it reaches 250°C is defined as M1, and the weight of the cured film (b) after being held at 250°C for 1 hour is defined as M2.

[0041] The measurement conditions and suitable resin compositions will be described later.

[0042] It is thought that outgassing from the cured film (b) 3 may have an effect on inducing delamination between the cured film (b) 3 and the metal-containing film (d) 9, or between the metal-containing film (d) 9 and the wiring (c) 4. In other words, if there is a large amount of outgassing from the cured film (b) 3, delamination may occur between the metal-containing film (d) 9 and the wiring (c) 4, resulting in frequent occurrence of poor conductivity. Therefore, it has been newly discovered that by setting the weight loss rate (M1-M2) / M1 of the cured film (b) 3 to a certain amount or less, the effect of suppressing poor conductivity between the metal-containing film (d) 9 and the wiring (c) 4 can be obtained.

[0043] Furthermore, in a display device using a plurality of micro LEDs as an LED array, outgassing is thought to affect the light emission state, and there are cases where the amount of light emitted is likely to vary between individual LEDs, and the effect tends to be greater particularly when the wiring spacing where a fine wiring pattern is formed is narrow and the spacing between adjacent LEDs is shorter. It is speculated that outgassing has an effect on poor conductivity between the cured film (b) 3 and the metal-containing film (d) 9, and between the metal-containing film (d) 9 and the wiring (c) 4.

[0044] This weight loss is thought to be related to the amount of outgassing, and by setting the weight loss rate (M1-M2) / M1 of the cured film (b) 3 to 0.015 or less, a significant effect can be obtained in suppressing poor conduction between the metal-containing film (d) 9 and the wiring (c) 4. The weight loss rate (M1-M2) / M1 of the cured film (b) 3 is preferably 0.010 or less.

[0045] In this way, suppressing outgassing from the cured film (b) 3 is also an effective measure, and by using a resin composition for the cured film (b) 3 with the composition described below, the effects of outgassing can be further suppressed, and poor conductivity due to peeling can be more effectively suppressed. Furthermore, deterioration of the light-emitting characteristics of the light-emitting diode can be suppressed.

[0046] The display device of the present invention preferably further comprises a metal-containing film (d1) 9a, the metal-containing film (d1) 9a being in contact with at least a part of the lower surface of the wiring (c) 4, and has at least one site having a laminated structure in which the cured film (b) 3, the metal-containing film (d1) 9a, the wiring (c) 4, and the metal-containing film (d) 9 are laminated in this order.

[0047] In FIG. 2 , the designated area (J) 12 indicated by the dashed line shows a laminated structure in which the cured film (b) 3, the metal-containing film (d1) 9a, the wiring (c) 4, the metal-containing film (d) 9, and the cured film (b) 3 are laminated in this order, and the metal-containing film (d) 9 or the metal-containing film (d1) 9a covers at least a portion of the upper surface, side, or lower surface of the wiring (c) 4, or is in contact with at least a portion of the upper surface, side, or lower surface of the wiring (c) 4. Also, FIG. 7 shows an enlarged view of the designated area (J) 12 in FIG. 2 . In the wiring (c) 4, the metal-containing film (d1) 9a contacts at least a portion of the lower surface 4e of the wiring (c) 4, and the metal-containing film (d9) covers at least a portion of the upper surface 4f and side surface 4g of the wiring (c) 4. This configuration can prevent corrosion due to migration of the wiring (c) 4 to the cured film (b) 3, oxidation of the wiring (c) 4 due to external oxygen and moisture, or outgassing from the cured film (b) 3, even in high-temperature environments. Therefore, it is possible to suppress the deterioration of the light emitting characteristics of the light emitting diode.

[0048] In the display device of the present invention, the opening of the cured film (b) 3 preferably has a forward tapered shape.

[0049] 2 to 6 show a laminated structure in which a cured film (b) 3, a film (d1) 9a containing a metal, a wiring (c) 4, and a film (d) 9 containing a metal are laminated in this order.

[0050] Since the opening of the cured film (b) 3 has a forward tapered shape, it is possible to suppress formation defects such as cracks and thickness variations in the metal-containing film (d1) 9a, wiring (c) 4, and metal-containing film (d) 9 formed in the opening.

[0051] The opening pattern of the cured film (b) 3 preferably has an angle of the inclined side in the cross section of the opening pattern of 40° or more and 85° or less. When the angle of the cross-sectional shape of the opening is 40° or more, multiple light-emitting diodes can be arranged efficiently, enabling high definition. The angle of the cross-sectional shape of the opening is more preferably 50° or more. On the other hand, when the angle of the cross-sectional shape of the opening is 85° or less, wiring defects such as short circuits in metal-containing films and wiring can be suppressed. The angle of the cross-sectional shape of the opening is more preferably 80° or less.

[0052] [Correction based on Rule 91 27.02.2025] Figure 10 shows a front cross-sectional view of an opening pattern 20 in the cured film (b) 3. In Figure 10, the angle of the inclined side 23 of the opening pattern 20 formed in the cured film (b) 3 is 24. The inclined side 23 is a straight line connecting the opening pattern at a position 26 that is 1 / 2 in the thickness 25 direction of the cured film (b) 3 and the opening pattern at the bottom.

[0053] In the present invention, it is preferable that the light-emitting diode (a) 2 further comprises a metal-containing film (d2) 9b, and that the metal-containing film (d2) 9b has a structure in at least one location covering at least a part of a surface other than the light extraction surface of the light-emitting diode (a) 2.

[0054] An example of an embodiment of this configuration is shown in FIG. 13-2, which is an enlarged view of the designated area (P) 28 in FIG. 13-1; FIG. 14-2, which is an enlarged view of the designated area (P) 28 in FIG. 14-1; FIG. 15-2, which is an enlarged view of the designated area (P) 28 in FIG. 15-1; or FIG. 16-2, which is an enlarged view of the designated area (Q) 31 in FIG. 16-1; detailed descriptions will be given later. Since FIG. 13-1 is similar to FIG. 1 except for the configuration shown in FIG. 13-2, the configuration of FIG. 1 is incorporated herein. Since FIG. 14-1 is similar to FIG. 2 except for the configuration shown in FIG. 14-2, the configuration of FIG. 2 is incorporated herein. Since FIG. 15-1 is similar to FIG. 3 except for the configuration shown in FIG. 15-2, the configuration of FIG. 3 is incorporated herein. Since FIG. 16-1 is similar to FIG. 5 except for the configuration shown in FIG. 16-2, the configuration of FIG. 5 is incorporated herein.

[0055] In the present invention, it is preferable that the light-emitting diode (a) 2 has at least one connection portion between the electrode 6 and the wiring (c) 4, where a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is interposed between the electrode 6 and the wiring (c) 4.

[0056] An enlarged view of the designated area (K) 13 in FIG. 2 is shown in FIG. 8. FIG. 8 illustrates a connection configuration in which a metal-containing film (d) 9 is interposed between the electrode 6 and the wiring (c) 4a at a connection portion 17a electrically connecting the electrode 6 and the wiring (c) 4a provided in the light-emitting diode (a) 2. At the connection portion 17a, the wiring (c) 4a and the electrode 6 are electrically connected by interposing a metal-containing film (d) 9 between the wiring (c) 4a and the electrode 6, and the metal-containing film (d) 9 is further covered with a cured film (b) 3. This configuration prevents corrosion due to migration of the wiring (c) 4a into the cured film (b) 3, oxidation of the wiring (c) 4a due to oxygen and moisture from the outside, and outgassing from the cured film (b) 3, even in high-temperature environments. This configuration therefore prevents degradation of the light-emitting characteristics of the light-emitting diode.

[0057] In the present invention, in a wiring layer having a plurality of layers each including a wiring (c) 4 and a cured film (b) 3, it is preferable that the wiring layer has at least one or more portions in which a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is interposed between the wirings (c) 4 at connection portions between the wirings (c) 4.

[0058] 8 shows a configuration in which, at the connection portion 17b, a metal-containing film (d) 9 or a metal-containing film (d1) 9a is interposed between the wiring (c) 4c and the wiring (c) 4d to electrically connect the wiring (c) 4c and the wiring (c) 4d, and the metal-containing film (d) 9 is further covered with a cured film (b) 3. This prevents corrosion due to migration of the wiring (c) 4c and the wiring (c) 4d into the cured film (b) 3, oxidation of the wiring (c) 4c and the wiring (c) 4d due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3, even in high-temperature environments. Therefore, degradation of the light-emitting characteristics of the light-emitting diode can be suppressed. Furthermore, by combining the use of a composition that suppresses weight loss of the cured film (b) 3, the effects of outgassing can be further suppressed, and poor conductivity due to peeling between the cured film (b) 3 and the metal-containing film (d1) 9a or between the wiring (c) 4 and the metal-containing film (d1) 9a can be more effectively suppressed. Furthermore, the deterioration of the light-emitting characteristics of the light-emitting diode can be further suppressed.

[0059] In the present invention, it is preferable that at a connection portion between the electrode 6 and the wiring (c) 4 provided in the light-emitting diode (a) 2, the electrode 6 and the wiring (c) 4 are connected, and that the periphery of the connection portion between the electrode 6 and the wiring (c) 4 has at least one or more portions where a film (d) 9 containing a metal and / or a film (d1) 9a containing the metal is formed.

[0060] An enlarged view of the designated region (N) 16 in Fig. 3 is shown in Fig. 9. Fig. 9 shows a configuration in which the wiring (c) 4c and the electrode 6 are directly connected at the connection portion 18 without any other intervening member, and the periphery of the connection portion 18 is covered with a metal-containing film (d1) 9a so that the connection portion 18 does not come into contact with the cured film (b) 3.

[0061] In such a connection portion, even in a high temperature environment, it is possible to prevent corrosion due to migration of the wiring (c) 4c into the cured film (b) 3, oxidation of the wiring (c) 4c due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3. Therefore, it is possible to suppress deterioration of the light-emitting characteristics of the light-emitting diode.

[0062] In the present invention, in a wiring layer having a plurality of layers each including a wiring (c) 4 and a cured film (b) 3, it is preferable that the wirings (c) 4 are connected to each other, and that the periphery of the connection portion between the wirings (c) 4 has at least one or more portions where a metal-containing film (d) 9 and / or the metal-containing film (d1) 9a is formed.

[0063] FIG. 9 shows a configuration in which, at connection portion 19, wiring (c) 4c and wiring (c) 4d are directly connected without any other intervening member, and the periphery of connection portion 19 is covered with a metal-containing film (d) 9 and a metal-containing film (d1) 9a so that connection portion 19 does not come into contact with cured film (b) 3.

[0064] In such a connection portion 19, even in a high-temperature environment, corrosion due to migration of the wiring (c) 4c and wiring (c) 4d into the cured film (b) 3, oxidation of the wiring (c) 4c and wiring (c) 4d due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3 can be prevented. Therefore, deterioration of the light-emitting characteristics of the light-emitting diode can be suppressed. Furthermore, by using a composition that suppresses weight loss of the cured film (b) 3, the effects of outgassing can be further suppressed, and poor conductivity due to peeling between the cured film (b) 3 and the metal-containing film (d) 9, or between the wiring (c) 4c and wiring (c) 4d and the metal-containing film (d) 9 can be more effectively suppressed. Furthermore, deterioration of the light-emitting diode's light-emitting characteristics can be further suppressed.

[0065] In addition, in the embodiment shown in Figure 9, the connection between the wiring (c) 4c and the electrode 6, and the connection between the wiring (c) 4c and the wiring (c) 4d are made directly without the interposition of the metal-containing film (d) 9, thereby preventing an increase in resistance due to the metal-containing film (d) 9 and suppressing electrical loss.

[0066] In the present invention, it is preferable that the main components constituting the wiring (c) 4 and the metal-containing film (d) 9 are different materials.

[0067] The main components constituting the wiring (c) 4 and the metal-containing film (d) 9 refer to the components that have the largest content ratio among the components constituting the wiring (c) 4 and the metal-containing film (d) 9, respectively, and the main components being different materials refers to the components that have the largest content ratio among the components constituting the wiring (c) 4 and the metal-containing film (d) 9, respectively, being different materials.

[0068] The material of the wiring (c) 4, 4a is preferably a metal with low volume resistivity, such as, but not limited to, gold, silver, copper, aluminum, and alloys containing these. Low volume resistivity refers to the inclusion of a metal with a volume resistivity (μΩcm) at 0°C of less than 5.0.

[0069] These metals can be formed by wet plating such as electroless plating and electrolytic plating, CVD chemical vapor deposition (CVD) methods such as thermal CVD, plasma CVD and laser CVD, dry plating methods such as vacuum deposition, sputtering and ion plating, and methods in which a metal foil is bonded to a substrate and then etched.

[0070] The thickness of the wirings (c) 4, 4a is preferably 0.5 μm or more and 20 μm or less, and more preferably 0.5 μm or more and 15 μm or less. By setting the thickness within this range, it is possible to protect the wirings (c) 4, 4a and prevent a decrease in electrical conductivity.

[0071] [Correction based on Rule 91, February 27, 2025] The material for the metal-containing film (d) 9 is preferably a metal with high volume resistivity, such as, but not limited to, at least one selected from the group consisting of titanium, chromium, nickel, molybdenum, niobium, and tungsten. High volume resistivity refers to the inclusion of a metal with a volume resistivity (μΩcm) of 5.0 or greater at 0°C. Other metals that are preferred include, but are not limited to, gold, which is highly corrosion-resistant. The metal-containing film (d) 9 and the metal-containing film (d1) 9a may be made of the same material or different materials.

[0072] These metals can be formed by wet plating such as electroless plating and electrolytic plating, CVD chemical vapor deposition (CVD) methods such as thermal CVD, plasma CVD and laser CVD, dry plating methods such as vacuum deposition, sputtering and ion plating, and methods in which a metal foil is bonded to a substrate and then etched.

[0073] Furthermore, the thickness of the metal-containing film (d) 9 or the metal-containing film (d1) 9a is preferably equal to or less than the thickness of the wiring (c) 4, i.e., 0.05 μm or more and 0.5 μm or less. More preferably, it is 0.1 μm or more and 0.5 μm or less. By setting the thickness within this range, it is possible to protect the wiring (c) 4, 4a and prevent a decrease in electrical conductivity.

[0074] The material of the side wiring 27 and / or the electrode 6 is not particularly limited, and examples thereof include metals and conductive films, and known materials may also be used.

[0075] Examples of metals include gold, silver, copper, aluminum, nickel, titanium, molybdenum, and alloys containing these.

[0076] The conductive film is preferable from the viewpoint of transparency, etc., and examples thereof include a compound containing an oxide of at least one element selected from the group consisting of indium, gallium, zinc, tin, titanium, and niobium as a main component, and a photosensitive conductive paste containing an organic substance and conductive particles, but other known conductive films may also be used. Specific examples of compounds containing an oxide of at least one element selected from the group consisting of indium, gallium, zinc, tin, titanium, and niobium as a main component include indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).

[0077] These conductive films can be formed by, for example, wet plating such as electroless plating and electrolytic plating; CVD (chemical vapor deposition) methods such as thermal CVD, plasma CVD and laser CVD; dry plating methods such as vacuum deposition, sputtering and ion plating; or a method in which a metal foil is bonded to a substrate and then etched.

[0078] When a conductive film formed from a photosensitive conductive paste containing an organic substance and conductive particles is used as a material for side wiring and / or electrodes, the content of the conductive particles is preferably 60% by mass or more and 90% by mass or less. By containing an organic substance in the conductive layer, disconnection at curved surfaces or bent portions can be suppressed, and conductivity can be improved. When the content of the conductive particles is 60% by mass or more, the probability of contact between the conductive particles increases, improving conductivity. Furthermore, separation of the conductive particles at bent portions of the wiring can be prevented. The content of the conductive particles is more preferably 70% by mass or more. On the other hand, when the content of the conductive particles is 90% by mass or less, it becomes easier to form a wiring pattern and disconnection at bent portions is less likely to occur. The content of the conductive particles is more preferably 80% by mass or less.

[0079] Examples of organic materials include epoxy resins, phenoxy resins, acrylic copolymers, and epoxy carboxylate compounds. Two or more of these may be contained. An organic material having a urethane bond may also be contained. By containing an organic material having a urethane bond, the flexibility of the wiring can be improved. Furthermore, the organic material preferably exhibits photosensitivity, which allows for easy formation of fine wiring patterns by photolithography. Photosensitivity can be achieved by, for example, containing a photopolymerization initiator or a component having an unsaturated double bond.

[0080] In the present invention, the conductive particles have an electrical resistivity of 10 －５It refers to particles composed of a substance with a resistivity of Ω·m or less. Examples of materials constituting the conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles. It is also preferable to contain two or more types of conductive particles. By containing two or more types of conductive particles, sintering of conductive particles of the same type and volumetric shrinkage during the heat treatment step described below is suppressed, resulting in suppression of volumetric shrinkage of the entire conductive film and improved flexibility.

[0081] The average particle diameter of the conductive particles is preferably 0.005 μm or more and 2 μm or less. Here, the average particle diameter refers to the average particle diameter of the larger particles when two or more types of conductive particles are contained. When the average particle diameter of the conductive particles is 0.005 μm or more, the interaction between the conductive particles can be appropriately suppressed, and the dispersed state of the conductive particles can be maintained more stably. The average particle diameter of the conductive particles is more preferably 0.01 μm or more. On the other hand, when the average particle diameter of the conductive particles is 2 μm or less, it becomes easier to form a desired wiring pattern. The average particle diameter of the conductive particles is more preferably 1.5 μm or less.

[0082] The thickness of the conductive film is preferably 2 μm or more and 10 μm or less. When the thickness of the conductive film is 2 μm or more, breakage at the bent portion can be further suppressed and the conductivity can be further improved. The thickness of the conductive film is more preferably 4 μm or more. On the other hand, when the thickness of the conductive film is 10 μm or less, the wiring pattern can be more easily formed in the manufacturing process. The thickness of the conductive film is more preferably 8 μm or less.

[0083] The display device of the present invention is a display device comprising at least a light-emitting diode (a) 2, a cured film (b) 3, wiring (c) 4, and a metal-containing film (d2) 9b, wherein the cured film (b) 3 is obtained from a resin composition containing a resin (A), and the metal-containing film (d2) 9b has a structure in at least one location covering at least a part of a surface other than the light extraction surface of the light-emitting diode (a) 2.

[0084] A seventh embodiment of the display device of the present invention will be described with reference to FIG. 13-2, an enlarged view of the designated area (P) 28 in FIG. 1. A structural diagram of the seventh embodiment is shown in FIG. 13-1. The display device D preferably has at least one region in which a metal-containing film (d2) 9b covers at least a portion of the surface other than the light extraction surface of the light-emitting diode (a) 2, and a cured film (b) 3 covers at least a portion of the surface of the metal-containing film (d2) 9b. In the following description, the cured film (b1) 30 and the cured film (b2) 32 are components provided in conjunction with the cured film (b) 3, and may be the same or different. The resins used in the cured film (b1) 30 and the cured film (b2) 32 will be described later. 13-1 and 13-2, a configuration is exemplified in which the cured film (b1) 30 covers at least a part of the surface of the light-emitting diode (a) 2, the metal-containing film (d2) 9b covers at least a part of the surface of the cured film (b1) 30 in a form that covers at least a part of the surface other than the light extraction surface of the light-emitting diode (a) 2, and the cured film (b3) covers at least a part of the surface of the metal-containing film (d2) 9b. An embodiment is shown in which the metal-containing film (d2) 9b and a part of the light-emitting diode (a) 2 are separated by the cured film (b1) 30.

[0085] 13-1 and 13-2, emitted light 29 is extracted from the light-emitting diode (a) 2 in the direction of the substrate 5, and the metal-containing film (d2) 9b covers at least a part of the surface other than the surface from which the emitted light 29 from the light-emitting diode (a) 2 is extracted. This allows the emitted light 29 to be reflected by the metal-containing film (d2) 9b, thereby increasing the light extraction efficiency and preventing a part of the emitted light 29 from entering the cured film (b) 3.

[0086] This makes it possible to prevent corrosion caused by migration from the wiring (c) 4 or wiring (c) 4a to the cured film (b) 3 or cured film (b1) 30, oxidation of the wiring (c) 4 or wiring (c) 4a due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3 or cured film (b1) 30, even in a high-temperature environment, and suppress deterioration of the light-emitting diode's light-emitting characteristics. Furthermore, it is possible to suppress deterioration such as film thinning and cracking of the cured film (b) 3 or cured film (b1) 30 that may occur in a high-temperature and humid environment due to light, particularly blue light, emitted from the light-emitting diode (a) 2.

[0087] Furthermore, the thickness of the metal-containing film (d2) 9b is preferably 0.05 μm or more and 1 μm or less, more preferably 0.1 μm or more and 0.5 μm or less. By making the thickness 0.05 μm or more, an effect of suppressing a portion of the emitted light 29 from being incident on the cured film (b) 3 can be obtained. By making the thickness 1 μm or less, an effect of suppressing migration in the cured film (b1) 30 and deterioration due to external oxygen or moisture can be obtained. Furthermore, it is preferable that the material of the metal-containing film (d2) 9b be the same material as the above-mentioned metal-containing film (d) 9 or metal-containing film (d1) 9a.

[0088] The cured film (b1) 30 may be a cured film made of the resin (A) described below, or a cured film made of other resins. It may also be made photosensitive. Examples of other resins include epoxy resins, (meth)acrylic polymers, polyurethanes, polyesters, polyolefins, polysiloxanes, and fluororesins. It is preferable that the cured film (b1) 30 have low outgassing. Furthermore, it is preferable that the transmittance of the cured film (b1) 30 at a wavelength of 450 nm is high. Hereinafter, the transmittance of the cured film (b1) 30 at a wavelength of 450 nm may be simply referred to as the "transmittance of the cured film (b1) 30." The transmittance of the cured film (b1) 30 at a thickness of 5 μm after curing is preferably 50% or more, more preferably 70% or more, and even more preferably 80% or more. A high transmittance of the cured film (b1) 30 improves light extraction efficiency.

[0089] Next, a display device according to an eighth embodiment of the present invention will be described with reference to Fig. 14-2, which is an enlarged view of the designated area (P) 28 in Fig. 1. A structural diagram of the eighth embodiment is shown in Fig. 14-1.

[0090] 14-1 and 14-2, a configuration is added to the configuration shown in FIGS. 13-1 and 13-2 in which a metal-containing film (d1) 9a is interposed between the wiring (c) 4 and the electrode 6, between the wiring (c) 4 and the cured film (b1) 30, between the wiring (c) 4 and the metal-containing film (d2) 9b, and between the wiring (c) 4 and the cured film (b3).

[0091] [Correction based on Rule 91 27.02.2025] This makes it possible to better prevent corrosion caused by migration from the wiring (c) 4 or wiring (c) 4a to the cured film (b) 3 or cured film (b1) 30, or oxidation of the wiring (c) 4 or wiring (c) 4a due to oxygen or moisture from the outside or outgassing from the cured film (b) 3 or cured film (b1) 30, even in high-temperature environments, and further suppress deterioration of the light-emitting characteristics of the light-emitting diode.

[0092] Next, a display device according to a ninth embodiment of the present invention will be described with reference to Fig. 15-2, which is an enlarged view of the designated area (P) 28 in Fig. 1. A structural diagram of the ninth embodiment is shown in Fig. 15-1.

[0093] 15-1 and 15-2, the configuration shown in FIGS. 13-1 and 13-2 is further enhanced by interposing a metal-containing film (d1) 9a between the wiring (c) 4 and the cured film (b1) 30, between the wiring (c) 4 and the metal-containing film (d2) 9b, and between the wiring (c) 4 and the cured film (b) 3. In particular, the metal-containing film (d1) 9a is configured to extend further upward into the wiring (c) 4 so that its side surface is in surface contact with the inner surface of the metal-containing film (d) 9. In FIGS. 14-1 and 14-2, the wiring (c) 4 and the metal-containing film (d1) 9a are in line contact, whereas in FIGS. 15-1 and 15-2, the wiring (c) 4 and the metal-containing film (d1) 9a are in surface contact.

[0094] The face-to-face contact configuration can further prevent corrosion caused by migration from the wiring (c) 4 to the cured film (b) 3, oxidation of the wiring (c) 4 due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3, even in a high-temperature environment, and can further suppress deterioration of the light-emitting characteristics of the light-emitting diode.

[0095] A display device according to a tenth embodiment of the present invention will now be described with reference to FIG. 16-2, which is an enlarged view of the designated region (Q) 31 in FIG. 5. A structural diagram of the tenth embodiment is shown in FIG. 16-1. A display device D preferably has at least one region in which a metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light extraction surface, and a cured film (b2) 32 covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light extraction surface.

[0096] 16-1 and 16-2 , the metal-containing film (d2) 9b has discontinuous, separated portions on at least a portion of the surface of the light-emitting diode (a) 2 to ensure insulation between the pair of electrodes 6. A cured film (b2) 32 is disposed in the discontinuous, separated portions. The cured film (b2) 32 has insulating properties and also has the function of preventing the emitted light 29 emitted from the light-emitting diode (a) 2 from entering the cured film (b) 3, thereby suppressing the incidence of a portion of the emitted light 29 on the cured film (b) 3.

[0097] This makes it possible to prevent corrosion, even in a high-temperature environment, due to migration from the wiring (c) 4a to the cured film (b) 3, oxidation of the wiring (c) 4a due to oxygen or moisture from the outside, or outgassing from the cured film (b) 3. As a result, it is possible to suppress deterioration in the light-emitting characteristics of the light-emitting diode.

[0098] Furthermore, the metal-containing film (d2) 9b can improve the light extraction efficiency by suppressing light leakage from the light-emitting diode (a) 2, and can also suppress deterioration such as film thinning and cracking of the cured film (b) 3 that may occur in a high-temperature environment or a humid environment due to light, particularly blue light, emitted from the light-emitting diode (a) 2.

[0099] The cured film (b2) 32 may be a cured film made of the resin (A) described below, or may be a cured film made of other resins. It may also be photosensitive. Examples of other resins include epoxy resins, (meth)acrylic polymers, polyurethanes, polyesters, polyolefins, polysiloxanes, and fluororesins. Furthermore, the transmittance of the cured film (b2) 32 at a wavelength of 450 nm is preferably low. Hereinafter, the transmittance of the cured film (b2) 32 at a wavelength of 450 nm may be simply referred to as the "transmittance of the cured film (b2) 32." The transmittance of the cured film (b2) 32 at a thickness of 1 μm after curing is preferably 95% or less, more preferably 50% or less, and even more preferably 25% or less. A low transmittance of the cured film (b2) 32 improves contrast. A photosensitizer, dye, pigment, or the like may be used to reduce the transmittance of the cured film (b2) 32. The cured film (b2) 32 may also be used where the cured film (b1) 30 is applied.

[0100] In the present invention, it is preferable that the length of one side of the light-emitting diode (a) 2 is 5 μm or more and 700 μm or less.

[0101] Light-emitting diodes are composed of a PN junction, where a P-type semiconductor and an N-type semiconductor are joined. When a forward voltage is applied to an LED, electrons and holes move within the chip, causing a current to flow. The electrons and holes combine to create an energy difference, which converts the excess energy into light energy, resulting in light emission. The wavelength of light emitted from an LED varies depending on the compound that makes up the semiconductor, such as GaN, GaAs, InGaAlP, or GaP, and this difference in wavelength determines the color of the emitted light. While white is typically displayed by mixing two or more different colors of light, mixing the three primary colors of red, green, and blue in LEDs significantly improves color reproducibility, making it possible to display a more natural white color.

[0102] The light-emitting diode (a) 2 may have a shape such as a bullet type, a chip type, or a polygonal type, but the chip type or polygonal type is preferred from the viewpoint of miniaturization of the light-emitting diode. Furthermore, it is preferable that the length of one side of the light-emitting diode (a) 2 is 5 μm or more and 700 μm or less, since this allows for the arrangement of multiple chips, and it is even more preferable that the length of one side of the light-emitting diode (a) 2 is 5 μm or more and 100 μm or less.

[0103] It is also preferable that the light emitting diode (a) 2 has electrodes on two different surfaces, and that the light emitting diode has a pair of electrodes on either one surface.

[0104] Examples of providing electrodes on two different surfaces of the light-emitting diode (a) 2 include structures in which electrodes 6 are arranged on opposing surfaces sandwiching the light-emitting diode (a) 2, as shown in FIGS. 1 to 3 , and examples of providing a pair of electrodes on one surface of the light-emitting diode (a) 2 include structures such as those shown in FIGS. 4 to 6 . By providing electrodes on two different surfaces of the light-emitting diode, it is possible to reduce the size of the light-emitting diode, thereby achieving low costs and a high-resolution display device with high-density packaging. By providing a pair of electrodes on one surface of the light-emitting diode, it is possible to stably package the light-emitting diode, thereby achieving low costs and a high-yield display device.

[0105] In the present invention, it is also preferable to provide electrodes on each of the discontinuous surfaces of the light-emitting diode. The discontinuous surfaces include surfaces that are not continuous but have steps. By providing electrodes 6 on the discontinuous surfaces, the light-emitting area of ​​the light-emitting diode can be controlled, and the productivity and light-emitting efficiency of the light-emitting diode can be improved.

[0106] As a method for mounting the light-emitting diode (a) 2 on a substrate such as the light-emitting diode drive substrate 7 on which the cured film (b) 3 is arranged, for example, a pick-and-place method or a mass transfer method has been proposed, but the method is not limited to these.

[0107] Examples of methods for mounting light-emitting diodes on a substrate include a method in which red, green, and blue light-emitting diodes are arranged in a matrix at predetermined positions on the substrate, and a method in which a single type of light-emitting diode, such as red or blue light-emitting diodes or ultraviolet light-emitting diodes, is arranged on the substrate. The former method may use light-emitting diodes that respectively emit red, green, and blue light, or may use vertically stacked light-emitting diodes that emit red, green, and blue light. The latter method facilitates the mounting of arrays of light-emitting diodes. In this case, wavelength conversion materials such as quantum dots can be used to create red, green, and blue subpixels to achieve a full-color display. Furthermore, two or more light-emitting diodes may be packaged and then mounted on a substrate.

[0108] In the present invention, the total thickness of the cured film (b) 3 is preferably 5 μm or more and 100 μm or less.

[0109] [Correction based on Rule 91 27.02.2025] By setting the total thickness of the cured film (b) 3 to be between 5 μm and 100 μm, it is possible to suppress absorption of light emitted in all directions from the light-emitting diode (a) 2 in the cured film 3, thereby increasing the light extraction efficiency and improving brightness. Furthermore, it is possible to reduce the height of the display device having the light-emitting diode itself, suppress wiring defects such as short circuits due to shorter wiring distances, reduce loss, and improve high-speed response.

[0110] The total thickness of the cured film (b) 3 refers to the total thickness of the continuous cured film layer in which at least a portion of one cured film is in contact with another cured film. For example, when a plurality of cured films (b) 3 are laminated as shown in Figure 1 above, the range indicated by 11 in Figure 1 is the total thickness of the cured film (b) 3 layer. The total thickness is preferably 5 μm or more and 70 μm or less, more preferably 5 μm or more and 60 μm or less.

[0111] When a plurality of cured films (b) 3 are laminated, the number of layers of the cured films (b) 3 is preferably 2 to 10.

[0112] The cured film (b) 3 is formed in one or more layers from the viewpoint of arranging a plurality of light-emitting diodes. Furthermore, by forming the cured film (b) 3 in two or more layers, the number of wirings that can be connected to the light-emitting diodes can be increased, and thus a plurality of light-emitting diodes can be arranged. Furthermore, from the viewpoints of suppressing wiring defects such as short circuits in wiring due to a low package height or a short wiring distance, reducing loss, and improving high-speed responsiveness, the cured film (b) 3 is preferably formed in 10 or less layers.

[0113] In the present invention, a partition wall or a light-shielding layer may be disposed between the plurality of light-emitting diodes (a) 2 .

[0114] In the present invention, the cured film (b) 3 obtained by curing a resin composition containing the resin (A) is preferably one having high heat resistance, specifically one that is less susceptible to resin degradation at high temperatures of 175° C. or higher during or after heat treatment. Furthermore, such a cured film is preferred because it exhibits little weight loss due to heat treatment, which is one of the excellent properties of cured films used in display devices, such as insulating films, protective films, and partition walls.

[0115] By keeping the weight loss rate of the cured film (b) 3 at a certain amount or less, poor conduction between the metal-containing film and the wiring can be effectively suppressed.

[0116] Furthermore, from the viewpoint of forming a desired opening pattern by exposure and development, the resin (A) preferably has high transmittance to light at the exposure wavelength before curing.

[0117] In order to obtain such properties, it is preferable to shorten the conjugated chain derived from the aromatic ring of the resin, or to reduce the charge transfer within or between molecules.

[0118] Furthermore, for the purpose of protecting the wiring, it is preferable that the processability is excellent even for a thick film having a thickness of 10 μm or more.

[0119] Resin (A) is not particularly limited, but is preferably an alkali-soluble resin from the viewpoint of reducing environmental impact. Alkali-soluble resins are defined as follows: a solution of a resin dissolved in γ-butyrolactone is applied to a silicon wafer and prebaked at 120°C for 4 minutes to form a prebaked film with a film thickness of 10 μm±0.5 μm. Here, prebaking refers to a process of heat-drying after application, and the prebaked film refers to the film obtained after heat-drying. The term "prebaked film" is also synonymous with "resin film." The prebaked film is then immersed in a 2.38% by mass aqueous solution of tetramethylammonium hydroxide at 23±1°C for 1 minute, followed by rinsing with pure water to determine the film thickness reduction. A prebaked film with a dissolution rate of 50 nm / min or higher is defined as alkali-soluble.

[0120] The resin (A) preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof. The resin (A) may contain these resins alone or in combination.

[0121] Polyimide, polyimide precursor, polybenzoxazole, and polybenzoxazole precursor will be described.

[0122] The polyimide is not particularly limited as long as it has an imide ring. The polyimide precursor is not particularly limited as long as it has a structure that becomes a polyimide having an imide ring by dehydration ring closure, and can contain polyamic acid, polyamic acid ester, etc. The polybenzoxazole is not particularly limited as long as it has an oxazole ring. The polybenzoxazole precursor is not particularly limited as long as it has a structure that becomes a polybenzoxazole having a benzoxazole ring by dehydration ring closure, and can contain polyhydroxyamide, etc.

[0123] The polyimide has a structural unit represented by general formula (1), the polyimide precursor and the polybenzoxazole precursor have a structural unit represented by the following general formula (2), and the polybenzoxazole has a structural unit represented by general formula (3). Two or more of these may be contained, or a resin may be contained in which the structural unit represented by general formula (1), the structural unit represented by general formula (2), and the structural unit represented by general formula (3) are copolymerized.

[0124]

[0125] In general formula (1), V represents a tetravalent to decavalent organic group having 4 to 40 carbon atoms, W represents a divalent to octavalent organic group having 4 to 40 carbon atoms, and a and b each represent an integer of 0 to 6. １ and R ２ represents a group selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfonic acid group, and a thiol group, and a plurality of R １ and R ２ may be the same or different.

[0126]

[0127] In the general formula (2), X and Y each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms. ３ and R ４ each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, c and d each represent an integer of 0 to 4, and e and f each represent an integer of 0 to 2.

[0128]

[0129] In the general formula (3), T and U each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms.

[0130] In order to impart alkali solubility to the resin (A), it is preferable that a + b > 0 in general formula (1). Also, it is preferable that c + d + e + f > 0 in general formula (2). In the case of a polyimide precursor, it is preferable that X and Y in general formula (2) have aromatic groups. Furthermore, X in general formula (2) has an aromatic group, e > 2, and has a carboxy group or a carboxy ester group at the ortho position of the aromatic amide group, resulting in a structure in which an imide ring is formed by dehydration ring closure.

[0131] In the case of a polybenzoxazole precursor, X in general formula (2) has an aromatic group, d>0, and has a hydroxyl group at the ortho-position of the aromatic amide group, and forms a structure that forms a benzoxazole ring by dehydration ring closure.

[0132] In the resin (A), the repeating number n of the structural unit represented by general formula (1), general formula (2), or general formula (3) is preferably 5 to 100,000, and more preferably 10 to 100,000.

[0133] In addition, the resin (A) may have other structural units in addition to the structural units represented by general formula (1), general formula (2), or general formula (3). Examples of other structural units include, but are not limited to, cardo structures and siloxane structures. In this case, it is preferable that the structural units represented by general formula (1) or general formula (2) are the main structural units. Here, the main structural units refer to the structural units represented by general formula (1), general formula (2), or general formula (3) that account for 50 mol% or more of the total number of structural units, and more preferably 70 mol% or more.

[0134] In the above general formula (1), V-(R １ ) a, in the above general formula (2), (OH) ｃ -X-(COOR ３ ) ｅIn the general formula (3), T represents an acid residue. V represents a tetravalent to decavalent organic group having 4 to 40 carbon atoms, and is preferably an organic group having 4 to 40 carbon atoms and containing an aromatic ring or a cyclic aliphatic group. X and T represent divalent to octavalent organic groups having 4 to 40 carbon atoms, and is preferably an organic group having 4 to 40 carbon atoms and containing an aromatic ring or an aliphatic group.

[0135] Examples of the acid component constituting the acid residue include, but are not limited to, the acids described in paragraph

[0123] of WO 2022 / 085431 and the acids having the structures shown below. Two or more of these may be used.

[0136]

[0137] In the formula, R １７ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R １８ and R １９ represents a hydrogen atom or a hydroxyl group.

[0138] These acids can be used as they are, or as acid anhydrides, halides, or activated esters.

[0139] W-(R ２ ) ｂ , (OH) in the above general formula (2) ｄ -Y-(COOR ４ ) ｆ In the general formula (3), U represents a residue of a diamine. W, Y, and U are divalent to octavalent organic groups having 4 to 40 carbon atoms, and among these, organic groups having 4 to 40 carbon atoms and containing an aromatic ring or a cycloaliphatic group are preferred.

[0140] Specific examples of diamines constituting the diamine residue include the diamines described in paragraph

[0128] of WO 2022 / 085431 and diamines having the structures shown below. Two or more of these may be used.

[0141]

[0142] In the formula, R２０ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R ２１ ~R ２４ each independently represents a hydrogen atom or a hydroxyl group.

[0143] Among these, it is preferable to contain at least one diamine having the structure shown below from the viewpoint of alkali developability and the heat resistance of the resin (A) and the cured film thereof.

[0144]

[0145] In the formula, R ２０ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R ２１ ~R ２２ each independently represents a hydrogen atom or a hydroxyl group.

[0146] These diamines can be used as they are, or as diisocyanate compounds or trimethylsilylated diamines obtained by reacting the diamines with phosgene.

[0147] Furthermore, the resin (A) preferably contains a group selected from an alkylene group and an alkylene ether group. These groups may contain an aliphatic ring. As the group selected from the alkylene group and the alkylene ether group, a group represented by general formula (4) is particularly preferred.

[0148]

[0149] In general formula (4), R ５ ~R ８ R each independently represents an alkylene group having 1 to 6 carbon atoms. ９ ~R １６ each independently represents a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms. However, the structures represented in the parentheses are different. g, h, and i each independently represent an integer of 0 to 35, and g + h + i > 0.

[0150] Examples of the group represented by formula (4) include an ethylene oxide group, a propylene oxide group, and a butylene oxide group, and the group may be linear, branched, or cyclic.

[0151] When the resin (A) contains a group selected from an alkylene group and an alkylene ether group, the mechanical properties, particularly the elongation, of the resin (A) and a cured film thereof can be improved.

[0152] Resin (A) preferably contains a group selected from the alkylene group and alkylene ether group as W in general formula (1) or Y in general formula (2), thereby improving the mechanical properties, particularly elongation, of resin (A) and its cured film, and also achieving high chemical resistance, high adhesion to substrate metals, and resistance to high-temperature environments by promoting ring closure in the cured film of the resin composition upon low-temperature heat treatment.

[0153] Specific examples of diamines containing a group selected from an alkylene group and an alkylene ether group include the diamines described in paragraph

[0141] of WO 2022 / 085431.

[0154] In addition, these diamines may contain -S-, -SO-, -SO ２ -, -NH-, -NCH ３ -, -N(CH ２ CH ３ ) -, -N(CH ２ CH ２ CH ３ )-,-N(CH(CH ３ ) ２ )-, -COO-, -CONH-, -OCONH-, -NHCONH-, and the like.

[0155] The diamine residues containing a group selected from an alkylene group and an alkylene ether group are preferably contained in an amount of 5 mol% or more, more preferably 10 mol% or more, of all diamine residues. Furthermore, the amount of diamine residues is preferably contained in an amount of 40 mol% or less, more preferably 30 mol% or less, of all diamine residues. By setting the amount within the above range, the developability in an alkaline developer can be improved, and the mechanical properties, particularly the elongation, of the resin (A) and its cured film can be improved. Furthermore, the cured film of the resin composition can be provided with high chemical resistance, high adhesion to metal surfaces, and resistance to high-temperature environments due to the promotion of ring closure during low-temperature heat treatment.

[0156] Diamine residues having an aliphatic polysiloxane structure may be copolymerized within a range that does not reduce heat resistance. Copolymerization of diamine residues having an aliphatic polysiloxane structure can improve adhesion to substrates. Specific examples of diamine components include those obtained by copolymerizing 1 to 15 mol % of all diamine residues with bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, or the like. Copolymerization within this range is preferred in terms of improving adhesion to substrates such as silicon wafers and not reducing solubility in alkaline solutions.

[0157] A resin having an acidic group at the end of the main chain can be obtained by capping the terminals of the resin (A) with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having an acidic group. Known monoamines, acid anhydrides, acid chlorides, and monocarboxylic acids having an acidic group may be used, or multiple monoamines, acid anhydrides, acid chlorides, and monocarboxylic acids may be used.

[0158] The content of the end-capping agent such as the monoamine, acid anhydride, acid chloride, or monocarboxylic acid is preferably 2 to 25 mol % relative to 100 mol % of the total of the acid components and amine components constituting the resin (A).

[0159] The resin (A) preferably has a weight-average molecular weight of 10,000 or more and 100,000 or less. If the weight-average molecular weight is 10,000 or more, the mechanical properties of the cured film after curing can be improved. More preferably, the weight-average molecular weight is 20,000 or more. On the other hand, if the weight-average molecular weight is 100,000 or less, the developability with various developers can be improved, and if the weight-average molecular weight is 50,000 or less, the developability with an alkaline solution can be improved, which is preferable.

[0160] The weight average molecular weight (Mw) can be determined using gel permeation chromatography (GPC). For example, it can be measured using N-methyl-2-pyrrolidone (hereinafter sometimes abbreviated as NMP) as the developing solvent and calculated in terms of polystyrene.

[0161] The content of resin (A) is preferably 3 to 55% by mass, and more preferably 5 to 40% by mass, of 100% by mass of all components including the solvent. By setting the content within this range, a viscosity suitable for spin coating or slit coating can be achieved.

[0162] Other examples of resins that may be used include phenolic resins, polymers containing radically polymerizable monomers with alkali-soluble groups as monomer units, such as polyhydroxystyrene and acrylic, siloxane polymers, cyclic olefin polymers, and cardo resins. These resins are preferably highly heat-resistant, specifically those that exhibit minimal resin degradation at temperatures of 175°C or higher during and after heat treatment. These resins may be any known type, provided they have high heat resistance. They may be used alone or in combination.

[0163] In the present invention, the resin composition containing the resin (A) preferably contains a photosensitizer (B) (hereinafter, sometimes referred to as component (B)).

[0164] The inclusion of the photosensitizer (B) is preferred because it imparts photosensitivity to the resin composition and enables the formation of a fine opening pattern.

[0165] The photosensitizer (B) is a compound whose chemical structure changes in response to ultraviolet light, and examples thereof include a photoacid generator, a photobase generator, a photopolymerization initiator, etc. When a photoacid generator is used as the photosensitizer (B), an acid is generated in the irradiated portion of the photosensitive resin composition, and the solubility of the irradiated portion in an alkaline developer increases, thereby obtaining a positive pattern in which the irradiated portion dissolves.

[0166] When a photobase generator is contained as the photosensitizer (B), a base is generated in the irradiated parts of the resin composition, and the solubility of the irradiated parts in an alkaline developer decreases, so that a negative pattern can be obtained in which the irradiated parts are insolubilized.

[0167] When the photosensitizer (B) contains a photopolymerization initiator, radicals are generated in the irradiated portion of the resin composition, radical polymerization proceeds, and the resin composition becomes insoluble in an alkaline developer, thereby forming a negative pattern. In addition, UV curing during exposure is promoted, thereby improving sensitivity.

[0168] In the present invention, the cured film (b) 3 obtained by curing the resin composition containing the resin (A) and the photosensitizer (B) preferably has a small weight loss upon heat treatment.

[0169] By keeping the weight loss rate of the cured film (b) 3 at or below a certain amount, it is possible to effectively prevent poor electrical continuity between the metal-containing film and the wiring, and also to prevent deterioration of the light-emitting characteristics of the light-emitting diode.

[0170] In order to obtain such properties, it is preferable that the photosensitizer (B) is one that decomposes and disappears upon curing, that the decomposition product upon curing has high heat resistance, that the decomposition product is not excessively acidic or basic, and that reacts with the resin (A), the thermal crosslinking agent (C) described below, and other components upon curing to improve heat resistance.

[0171] The resin composition containing the resin (A) and, if necessary, the photosensitizer (B) preferably has positive photosensitivity from the viewpoint of fine processing ability.

[0172] Among the above-mentioned photosensitizers (B), photoacid generators are preferred from the viewpoint of high sensitivity and fine processability. Examples of photoacid generators include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Furthermore, a sensitizer or the like may be contained as needed.

[0173] The quinone diazide compound is preferably a compound having a phenolic hydroxyl group and a naphthoquinone diazide sulfonic acid bonded to the compound via an ester bond. The compound having a phenolic hydroxyl group used here may be a known compound, and examples of the compound having a phenolic hydroxyl group to which 4-naphthoquinone diazide sulfonic acid or 5-naphthoquinone diazide sulfonic acid is introduced via an ester bond can be given as preferred examples, but other compounds can also be used.

[0174] In addition, it is preferable that 50 mol % or more of all functional groups of the compound having a phenolic hydroxyl group are substituted with quinone diazide. By using a quinone diazide compound substituted by 50 mol % or more, the affinity of the quinone diazide compound for alkaline aqueous solutions is reduced. As a result, the solubility of the unexposed portions of the resin composition in alkaline aqueous solutions is significantly reduced. Furthermore, the quinone diazide sulfonyl groups are converted to indene carboxylic acid by exposure, resulting in a high dissolution rate of the exposed portions of the photosensitive resin composition in alkaline aqueous solutions. That is, as a result, the dissolution rate ratio between the exposed and unexposed portions of the composition is increased, allowing for the production of patterns with high resolution.

[0175] By containing such a quinone diazide compound, it is possible to obtain a resin composition having positive photosensitivity that is sensitive to the i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a general mercury lamp, or to a broad band including these. In addition, the photosensitizer (B) may be contained alone or in combination of two or more types, and in either case, a highly sensitive resin composition can be obtained.

[0176] Examples of quinone diazides include a 5-naphthoquinone diazide sulfonyl group, a 4-naphthoquinone diazide sulfonyl group, and those containing a 4-naphthoquinone diazide sulfonyl group and a 5-naphthoquinone diazide sulfonyl group in the same molecule.

[0177] Examples of naphthoquinone diazide sulfonyl ester compounds include 5-naphthoquinone diazide sulfonyl ester compound (B1) and 4-naphthoquinone diazide sulfonyl ester compound (B2), but in the present invention, it is preferable to include compound (B1). Compound (B1) has an absorption that extends to the g-line region of a mercury lamp, making it suitable for g-line exposure and full-wavelength exposure. Furthermore, it reacts with resin (A) and the like during curing to form a crosslinked structure, improving chemical resistance. Furthermore, since the crosslinked structure is formed and the decomposition product is a carboxylic acid, it is also preferable from the viewpoint of small weight loss due to heat treatment.

[0178] The quinone diazide compound can be synthesized by a known method through an esterification reaction between a compound having a phenolic hydroxyl group and a quinone diazide sulfonic acid compound. The use of the quinone diazide compound further improves resolution, sensitivity, and film retention.

[0179] The molecular weight of the photosensitizer (B) is preferably 300 or more, more preferably 350 or more, and is preferably 3,000 or less, more preferably 1,500 or less, from the viewpoint of the heat resistance, mechanical properties, and adhesiveness of the film obtained by heat treatment.

[0180] Of the photosensitizers (B), sulfonium salts, phosphonium salts and diazonium salts are preferred because they appropriately stabilize the acid component generated by exposure, with sulfonium salts being particularly preferred.

[0181] The content of the photosensitizer (B) is preferably 0.1 parts by mass or more and 100 parts by mass or less relative to 100 parts by mass of the resin (A). When the content of the photosensitizer (B) is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0182] When the photosensitizer (B) contains a quinone diazide compound, the content of the photosensitizer (B) is more preferably 1 part by mass or more, and even more preferably 3 parts by mass or more, relative to 100 parts by mass of the resin (A). When the photosensitizer (B) contains a quinone diazide compound, the content is more preferably 100 parts by mass or less, and even more preferably 80 parts by mass or less, relative to 100 parts by mass of the resin (A). When the photosensitizer (B) contains a quinone diazide compound, if the content of the photosensitizer (B) is 1 part by mass or more and 100 parts by mass or less, relative to 100 parts by mass of the resin (A), photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0183] When the photosensitizer (B) contains a sulfonium salt, a phosphonium salt or a diazonium salt, the content of the photosensitizer (B) is more preferably 0.1 parts by mass or more, more preferably 1 part by mass or more, particularly preferably 3 parts by mass or more, relative to 100 parts by mass of the resin (A).In addition, when the photosensitizer (B) contains a sulfonium salt, a phosphonium salt or a diazonium salt, the content of the photosensitizer (B) is more preferably 100 parts by mass or less, more preferably 80 parts by mass or less, particularly preferably 50 parts by mass or less, relative to 100 parts by mass of the resin (A).When the photosensitizer (B) contains a sulfonium salt, a phosphonium salt or a diazonium salt, if the content of the photosensitizer (B) is within the above range, the heat resistance, chemical resistance and mechanical properties of the film after heat treatment can be maintained, and photosensitivity can be imparted.

[0184] When a photobase generator is contained as the photosensitizer (B), specific examples of the photobase generator include amide compounds and ammonium salts.

[0185] Examples of the amide compound include 2-nitrophenylmethyl-4-methacryloyloxypiperidine-1-carboxylate, 9-anthrylmethyl-N,N-dimethylcarbamate, 1-(anthraquinone-2yl)ethylimidazolecarboxylate, and (E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine.

[0186] Examples of ammonium salts include 1,2-diisopropyl-3-(bisdimethylamino)methylene)guanidinium 2-(3-benzoylphenyl)propionate, (Z)-{[bis(dimethylamino)methylidene]amino}-N-cyclohexylamino)methaniminium tetrakis(3-fluorophenyl)borate, and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidinium n-butyltriphenylborate.

[0187] When a photobase generator is contained as the photosensitizer (B), the content of the photosensitizer (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, relative to 100 parts by mass of the resin (A). When the content of the photosensitizer (B) when a photobase generator is contained is within the above range, the sensitivity during exposure can be improved. On the other hand, when a photobase generator is contained, the content of the photosensitizer (B) is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less, relative to 100 parts by mass of the resin (A). When a photobase generator is contained, the content of the photosensitizer (B) when a photobase generator is contained is within the above range, the resolution after development can be improved.

[0188] When a photopolymerization initiator is contained as the photosensitizer (B), examples of the photopolymerization initiator include benzyl ketal-based photopolymerization initiators, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, benzophenone-based photopolymerization initiators, acetophenone-based photopolymerization initiators, aromatic ketoester-based photopolymerization initiators or benzoate ester-based photopolymerization initiators, and titanocene-based photopolymerization initiators. Known photopolymerization initiators may be used, or a plurality of such initiators may be used. Among these, from the viewpoint of improving sensitivity during exposure, an α-hydroxyketone-based photopolymerization initiator, an α-aminoketone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, an oxime ester-based photopolymerization initiator, an acridine-based photopolymerization initiator, or a benzophenone-based photopolymerization initiator is more preferable, and an α-aminoketone-based photopolymerization initiator, an acylphosphine oxide-based photopolymerization initiator, or an oxime ester-based photopolymerization initiator is even more preferable.

[0189] When a photopolymerization initiator is contained as the photosensitizer (B), the content of the photosensitizer (B) in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, relative to 100 parts by mass of the resin (A). When the content of the photosensitizer (B) when a photopolymerization initiator is contained is within the above range, the sensitivity during exposure can be improved. On the other hand, when a photopolymerization initiator is contained, the content of the photosensitizer (B) is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less, relative to 100 parts by mass of the resin (A). When a photopolymerization initiator is contained, the content of the photosensitizer (B) when a photopolymerization initiator is contained is within the above range, the resolution after development can be improved.

[0190] In the present invention, the resin composition containing the resin (A) further contains a thermal crosslinking agent (C) (hereinafter, may be referred to as component (C)), and the amount of the thermal crosslinking agent (C) is preferably 1 part by mass or more and 50 parts by mass or less per 100 parts by mass of the resin (A).

[0191] A thermal crosslinking agent refers to a resin or compound having at least two thermally reactive functional groups within the molecule. Examples of thermally reactive functional groups include compounds having an alkoxymethyl group, a methylol group, a cyclic ether group, etc. In the present invention, the inclusion of the thermal crosslinking agent (C) improves chemical resistance. When the content of the thermal crosslinking agent (C) is within the above-mentioned preferred range, a cured film with high heat resistance and chemical resistance to flux solutions and the like can be obtained. Furthermore, weight loss of the cured film (b) 3 can be suppressed, the effects of outgassing can be suppressed, and poor electrical continuity due to peeling between the cured film (b) 3 and the metal-containing film (d) 9a or between the wiring (c) 4 and the metal-containing film (d) 9a can be more effectively suppressed. Furthermore, degradation of the light-emitting diode's light-emitting characteristics can be suppressed. The content of the thermal crosslinking agent (C) is preferably 5 parts by mass or more per 100 parts by mass of the resin (A). The content of the thermal crosslinking agent (C) is more preferably 40 parts by mass or less per 100 parts by mass of the resin (A).

[0192] In the present invention, it is preferable that the cured film obtained by curing the resin composition containing the resin (A), the photosensitizer (B), and the thermal crosslinking agent (C) has a small weight loss due to heat treatment.

[0193] By keeping the weight loss rate of the cured film at a certain amount or less, poor conduction between the metal-containing film and the wiring can be effectively suppressed.

[0194] In order to obtain such properties, it is preferable that the thermal crosslinking agent (C) has high heat resistance and hardly forms, for example, a quinone structure which is one of colored structures, or the like, or that the reaction product between the photosensitizer (B) and the resin (A) or the like has high heat resistance, or that the decomposition product of the thermal crosslinking agent (C) itself or a reaction product derived from the decomposition product has high heat resistance.

[0195] The thermal crosslinking agent (C) preferably contains at least a compound having an alkoxymethyl group or a methylol group (hereinafter sometimes abbreviated as component (C1)). The inclusion of component (C1) strengthens the crosslinking, improving the heat resistance of the cured film and further improving chemical resistance to flux solutions and the like. Specific examples of component (C1) include the following methylol compounds and alkoxymethyl compounds in which the hydrogen atom of the methylol group is substituted with a methyl group or an alkyl group having 2 to 10 carbon atoms, but are not limited to the structures shown below.

[0196]

[0197]

[0198] The thermal crosslinking agent (C) may contain one or more cyclic ether group compounds (hereinafter, sometimes abbreviated as component (C2)). By including component (C2), the reaction can proceed even at a low temperature of 160°C or less, and the crosslinking can be made stronger, thereby further improving the chemical resistance of the cured film.

[0199] Specific examples of the component (C2) include the cyclic ether group compounds described in paragraph

[0185] of WO 2022 / 085431.

[0200] Among these, those having a triarylmethane structure or a biphenyl structure are preferred, and specific examples include YX4000 and YX4000H (both manufactured by Mitsubishi Chemical Corporation), TECHMORE VG3101L (manufactured by Printec Co., Ltd.), and NC-3000.

[0201] Furthermore, the thermal crosslinking agent (C) may contain one or more compounds containing a structural unit represented by the following general formula (5) (hereinafter, sometimes abbreviated as component (C3)).

[0202]

[0203] In general formula (5), R ２５R is a divalent organic group having an alkylene group or an alkylene ether group having 1 to 15 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, an ethylene oxide group, a propylene oxide group, or a butylene oxide group, and may be linear, branched, or cyclic. Furthermore, some of the substituents of the divalent organic group having an alkylene group or an alkylene ether group having 1 to 15 carbon atoms may have a cyclic ether group, an alkylsilyl group, an alkoxysilyl group, an aryl group, an aryl ether group, a carboxy group, a carbonyl group, an allyl group, a vinyl group, a heterocyclic group, or other substituents, or may be a combination thereof. ２６ and R ２７ each independently represents a hydrogen atom or a methyl group.

[0204] The component (C3) itself contains a flexible alkylene group and a rigid aromatic group. Therefore, by including the component (C3), the resulting cured film can have improved elongation and reduced stress while maintaining heat resistance.

[0205] Examples of crosslinking groups contained in component (C3) include, but are not limited to, acrylic groups, methylol groups, alkoxymethyl groups, cyclic ether groups, etc. Among these, cyclic ether groups are preferred because they react with hydroxyl groups in resin (A) to improve the heat resistance of the cured film and can react without dehydration.

[0206] Specific examples of compounds containing a structural unit represented by general formula (5) include, but are not limited to, the following structures:

[0207]

[0208] o during the ceremony １ is an integer from 1 to 20, o ２ is an integer of 1 to 5. In order to achieve both heat resistance and improved elongation, １ is an integer from 3 to 7, o ２ is preferably an integer of 1 or 2.

[0209] The thermal crosslinking agent (C) may be used in combination of two or more kinds.

[0210] The resin composition containing the resin (A) may contain, as necessary, other components such as a radical polymerizable compound, an antioxidant, a solvent, a compound having a phenolic hydroxyl group, an adhesion improver, a bonding improver, and a surfactant.

[0211] Next, a method for producing the resin composition of the present invention will be described. For example, the resin composition can be obtained by mixing and dissolving the resin (A) and, if necessary, the photosensitizer (B), the thermal crosslinking agent (C), each radical polymerizable compound, an antioxidant, a solvent, a compound having a phenolic hydroxyl group, an adhesion improver, an adhesion improver, a surfactant, and the like.

[0212] The dissolution method may be a known method such as heating or stirring.

[0213] The viscosity of the resin composition is preferably 2 to 5,000 mPa·s. By adjusting the solid content concentration so that the viscosity is 2 mPa·s or more, it is easy to obtain a desired film thickness. On the other hand, if the viscosity is 5,000 mPa·s or less, it is easy to obtain a highly uniform resin film. A resin composition having such a viscosity can be easily obtained, for example, by adjusting the solid content concentration to 5 to 60 mass%. Here, the solid content concentration refers to the components other than the solvent.

[0214] The resulting resin composition is preferably filtered using a filter to remove dust and particles. Filter materials include polypropylene (PP), polyethylene (PE), nylon (NY), and polytetrafluoroethylene (PTFE), with polyethylene and nylon being preferred.

[0215] When forming a cured film by curing a resin composition containing resin (A), a resin sheet may be formed from the resin composition containing resin (A), and then the resin sheet may be cured to form a film.

[0216] The resin sheet refers to a sheet formed on a substrate using the resin composition, specifically, a resin sheet obtained by applying the resin composition to a substrate and drying it.

[0217] A film such as polyethylene terephthalate (PET) can be used as the substrate to which the resin composition is applied. When the resin sheet is used by being attached to a substrate such as a silicon wafer, if it is necessary to peel and remove the substrate, it is preferable to use a substrate whose surface is coated with a release agent such as a silicone resin, because this allows the resin sheet to be easily peeled from the substrate.

[0218] Next, a method for manufacturing the display device of the present invention will be described.

[0219] 11-1 and 11-2 show an example of the manufacturing process of the second embodiment of the display device having the light-emitting diode of the present invention. Since the manufacturing process of the first embodiment and the manufacturing process of the fourth embodiment are almost the same as the manufacturing process of the second embodiment, the manufacturing process of the second embodiment will be explained as a representative.

[0220] Hereinafter, the term "resin film" refers to a film obtained by applying a resin composition containing resin (A) to a substrate or laminating a resin sheet thereon and drying it. Herein, a resin composition containing resin (A) that contains a solvent may also be referred to as a "varnish." Furthermore, the term "cured film" refers to a resin film or a film obtained by curing a resin sheet.

[0221] FIG. 11-1a shows the step (Sd1) of arranging wiring (c) 4a on a substrate 5. The substrate 5 may be, but is not limited to, a glass substrate, a silicon substrate, ceramics, gallium arsenide, an organic circuit board, an inorganic circuit board, or any of these substrates on which circuit components are arranged. A temporary bonding material may be arranged on the substrate 5. A TFT array substrate may also be used. Furthermore, the wiring (c) 4a may be connected to the wiring (c) 4 extending through a through electrode or the like in the cured film (b) 3 arranged so as to contact at least a portion of the light-emitting diode (a) 2, or may be connected to the light-emitting diode drive substrate 7.

[0222] FIG. 11-1a shows an example in which a temporary adhesive layer is formed on a substrate 5, and wiring (c) 4a is formed thereon.

[0223] 11-1b shows a step (Sd2) in which a metal-containing film (d) 9 covers the upper and side surfaces of the wiring (c) 4a. As described above, the metal-containing film (d) 9 preferably contains a metal with high volume resistivity or high corrosion resistance. The metal-containing film (d) 9 is shown formed by a sputtering method.

[0224] Next, FIG. 11-1c shows a step (Sd3) of arranging a light emitting diode (a) 2 having electrodes 6 on two different surfaces thereof on the film (d) 9 containing a metal.

[0225] The electrode 6 and the metal-containing film (d) 9 may be connected via a bump or a conductive film, or may be connected directly.

[0226] Next, Figure 11-1d shows a process (Sd4) in which a resin composition containing resin (A) or a resin sheet formed from a resin composition containing resin (A) is applied or laminated onto the substrate 5 and the light-emitting diode (a) 2 to form a resin film 21, and then a through-hole opening pattern 20 corresponding to the shape of the wiring (c) 4 is formed in the resin film 21 using a photolithography process.

[0227] Here, "on the substrate" and "on the light-emitting diode" do not only refer to the surface of the substrate or the surface of the light-emitting diode, but also to the upper side of the substrate or the light-emitting diode, and a resin film may be formed by applying or laminating a resin composition containing the resin (A) or a resin sheet formed from a resin composition containing the resin (A) onto a cured film or wiring.

[0228] Examples of the coating method include spin coating, slit coating, dip coating, spray coating, printing, etc. The coating thickness varies depending on the coating method, the solids concentration of the composition, the viscosity, etc., but the coating is usually carried out so that the film thickness after drying will be 0.1 to 150 μm.

[0229] Prior to coating, the substrate to which the resin composition containing resin (A) is to be applied may be pretreated with the adhesion promoter described above. For example, the substrate surface may be treated by spin coating, slit die coating, bar coating, dip coating, spray coating, steam treatment, or the like using a solution in which 0.5 to 20% by mass of the adhesion promoter is dissolved in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, or diethyl adipate. After treating the substrate surface, a reduced pressure drying treatment may be performed as necessary. Furthermore, the reaction between the substrate and the adhesion promoter may then be promoted by heat treatment at 50°C to 280°C.

[0230] Next, the coated film of the resin composition containing the resin (A) is dried to obtain the resin film 21. Drying is preferably carried out using an oven, a hot plate, infrared rays, or the like at a temperature in the range of 50°C to 140°C for 1 minute to several hours.

[0231] On the other hand, when the resin sheet is used, if the resin sheet has a protective film, the protective film is peeled off, and the resin sheet and the substrate are placed face to face and bonded by thermocompression (placing the resin sheet and the substrate face to face and bonding them by thermocompression is sometimes referred to as laminating the resin sheet to the substrate). Next, the resin sheet laminated to the substrate is dried in the same manner as when obtaining the resin film, to form the resin film 21. The resin sheet can be obtained by applying a resin composition containing resin (A) to a support film made of polyethylene terephthalate or the like, which is a peelable substrate, and drying it.

[0232] Thermocompression bonding can be performed by heat pressing, heat lamination, thermal vacuum lamination, etc. The lamination temperature is preferably 40°C or higher in terms of adhesion to the substrate and embeddability. Furthermore, when the resin sheet is photosensitive, the lamination temperature is preferably 140°C or lower to prevent the resin sheet from curing during lamination, which would reduce the resolution of pattern formation in the exposure and development steps.

[0233] Next, a photolithography process is used to form a through-hole pattern 20 corresponding to the shape of the wiring (c) 4 in the resin film 21 .

[0234] Since the resin composition or resin sheet containing the resin (A) can be microfabricated, it is possible to arrange light-emitting diodes at high density.

[0235] The photosensitive resin film is irradiated with actinic radiation through a mask having a desired pattern. Actinic radiation used for exposure includes ultraviolet light, visible light, electron beams, and X-rays. In the present invention, it is preferable to use g-rays (436 nm), h-rays (405 nm), or i-rays (365 nm), which are common exposure wavelengths. For non-photosensitive resin films, a photoresist is formed after the resin film is formed, and then the actinic radiation is irradiated. The exposed photosensitive resin film 21 is then developed using a known developer.

[0236] The resin film 21 is heated to promote ring-closing reactions and thermal crosslinking reactions, yielding a cured film (b) 3. The cured film (b) 3 has improved heat resistance and chemical resistance due to crosslinking between the resins (A) themselves or with the photosensitizer (B) or thermal crosslinking agent (C). This heat treatment may be carried out by gradually increasing the temperature or by continuously increasing the temperature. The heat treatment is preferably carried out for 5 minutes to 5 hours. An example includes a 30-minute heat treatment at 110°C, followed by a further 60-minute heat treatment at 230°C. Heat treatment conditions are preferably 140°C or higher and 400°C or lower. To promote the thermal crosslinking reaction, a heat treatment temperature of 140°C or higher is preferred, with 160°C or higher being more preferred. Furthermore, to provide an excellent cured film and improve the reliability of display devices, heat treatment conditions are preferably 300°C or lower, with 250°C or lower being more preferred.

[0237] In order to obtain a cured film with high heat resistance, it is preferable that heating be performed in an atmosphere with a low oxygen concentration, preferably 1,000 ppm or less, more preferably 300 ppm or less, and even more preferably 50 ppm or less.

[0238] The opening pattern 20 preferably has a forward tapered shape, which allows the formation of a metal-containing film (d1) 9a, wiring (c) 4, metal-containing film (d) 9, and the like, which will be described later, without cracks or variations in film thickness.

[0239] Next, Figure 11-1e shows a process (Sd5) of forming a metal-containing film (d1) 9a on a portion of the surface of the cured film (b) 3 and in the opening pattern 20 of the cured film (b) 3. This is a process of forming a metal-containing film (d1) 9a by a sputtering method or the like after forming a photoresist layer (not shown). Next, Figure 11-2f shows a process (Sd6) of forming wiring (c) 4 on the electrode 6 and on the surface of the metal-containing film (d1) 9a, and further forming a metal-containing film (d) 9 on the upper surface and side surface of the wiring (c) 4.

[0240] This is a process of forming wiring (c) 4 made of a metal such as copper or a conductive film on the electrode 6 or on the surface of the metal-containing film (d) 9 by plating, sputtering, or the like, for electrically connecting it to at least one of the electrodes 6 of the light-emitting diode (a) 2. Furthermore, a metal-containing film (d) 9 is formed on the upper and side surfaces of the wiring (c) 4 by sputtering, or the like. Thereafter, unnecessary photoresist is removed. After forming the wiring (c) 4, unnecessary photoresist may be removed, and then a metal-containing film (d) 9 may be formed on the upper and side surfaces of the wiring (c) 4 by sputtering, or the like.

[0241] As a result, the metal-containing film (d) 9 covers at least a portion of the surface of the wiring (c) 4, thereby preventing corrosion due to migration of the wiring (c) 4 to the cured film (b) 3, oxidation of the wiring (c) 4 due to external oxygen or moisture, or outgassing from the cured film (b) 3, even in high-temperature environments. This prevents deterioration of the light-emitting characteristics of the light-emitting diode. Furthermore, the aforementioned effects are further enhanced by the metal-containing film (d) 9 and / or the metal-containing film (d1) 9a covering or contacting at least a portion of the upper, side, or lower surface of the wiring (c) 4. Additionally, by keeping the weight loss rate of the cured film (b) 3 at a certain amount or less, poor conductivity between the cured film (b) 3 and the metal-containing film (d) 9 and between the metal-containing film (d) 9 and the wiring (c) 4 is effectively suppressed.

[0242] Furthermore, by repeating the steps (Sd4), (Sd5), and (Sd6) multiple times, it is possible to form multiple layers of the cured film (b) 3 having the wiring (c) 4 and the metal-containing film (d) 9 in the cured film (b) 3.

[0243] As a result, by forming a plurality of layers of the cured film (b) 3 having the wiring (c) 4 therein, a plurality of light-emitting diodes (a) 2 can be arranged, and further, wiring defects such as short circuits in the wiring due to a low package height or a short wiring distance can be suppressed, loss can be reduced, and high-speed response can be improved.

[0244] Thereafter, in a step (Sd7) shown in FIG. 11-2g and a step (Sd8) shown in FIG. 11-2h, a metal-containing film (d1) 9a is formed in the opening pattern 20 of the cured film (b) 3 by a sputtering method, and then a bump 10 is formed.

[0245] 11-2i is a process of electrically connecting the light emitting diodes (a) 2 to a light emitting diode drive substrate 7 having drive elements 8 such as a driver IC via bumps 10 to obtain a display device D having a plurality of light emitting diodes (a) 2. The wiring (c) 4 may include electrodes.

[0246] One or more driving elements 8 may be used for one light-emitting diode (a) 2, one unit of light-emitting diode (a) 2 consisting of red, blue, and green, or for multiple light-emitting diodes (a) 2, or multiple units of light-emitting diodes (a) 2, depending on the function, and for example, one or more driving elements may be disposed near the light-emitting diode (a) 2 during the process of Fig. 11. In this case, the driving element is electrically connected to the light-emitting diode (a) 2 via the light-emitting diode driving substrate 7, the side wiring 27, the wiring (c) 4 extending into the cured film (b) 3, the wiring (c) 4a, etc.

[0247] As a result, the cured film (b) 3 can ensure electrical insulation of the wiring (c) 4, and by extending the wiring (c) 4 into the cured film (b) 3, the electrode 6 of the light-emitting diode (a) 2 and the driving element 8 can be electrically connected, thereby controlling the light-emitting operation.

[0248] FIG. 12 shows an example of a manufacturing process for the third embodiment of the display device having a light-emitting diode of the present invention.

[0249] The manufacturing process of the fifth embodiment and the sixth embodiment is almost the same as the manufacturing process of the third embodiment, so the manufacturing process of the third embodiment will be described as a representative example.

[0250] 11-1b, the process (Se1) shown in Fig. 12a is a process in which the metal-containing film (d) 9 covers the side surface of the wiring (c) 4a, and no metal-containing film is disposed on the upper surface. Note that, examples of a method for covering the side surface of the wiring (c) 4a with the metal-containing film (d) 9 include, but are not limited to, a method in which a photoresist is formed on the upper surface of the wiring (c) 4a in advance, the metal-containing film (d) 9 is formed by a method such as sputtering, and then the photoresist is removed, or a method in which the metal-containing film (d) 9 is formed so as to cover the upper and side surfaces of the wiring (c) 4a, and then the metal-containing film (d) 9 on the upper surface of the wiring (c) 4a is removed by a method such as etching.

[0251] 12b is a step of arranging the light-emitting diode (a) 2 having electrodes 6 on two different surfaces on the upper surface of the wiring (c) 4a in the step (Sd3) shown in Fig. 11-1c. That is, the wiring (c) 4a and the electrode 6 are directly connected to each other without the interposition of the metal-containing film (d) 9.

[0252] 12c is a step of forming a penetrating opening pattern 20 corresponding to the shape of the wiring (c) 4 in the resin film 21 using a photolithography process in the step (Sd4) shown in Fig. 11-1d. Thereafter, the resin film 21 is heated to cause a ring-closing reaction or a thermal crosslinking reaction to proceed, thereby obtaining a cured film (b) 3.

[0253] 11-1e, a process (Sd5) is shown in FIG. 11-1e, in which a metal-containing film (d1) 9a is formed on a portion of the surface of the cured film (b) 3 and in the opening pattern 20 of the cured film (b) 3; a process (Sd6) is shown in FIG. 11-2f, in which wiring (c) 4 is formed on the electrode 6 and on the surface of the metal-containing film (d1) 9a, and further, a metal-containing film (d) 9 is formed on the upper surface and side surface of the wiring (c) 4, and no metal-containing film is disposed on a portion of the upper surface of the wiring (c) 4; and a process (Sd4) is shown in FIG. 11-1d, in which a resin composition containing resin (A) or a resin sheet formed from a resin composition containing resin (A) is applied or laminated to form a resin film 21, and further, a through-hole opening pattern 20 corresponding to the shape of the wiring (c) 4 is formed in the resin film 21 using a photolithography process, and then a cured film (b) 3 is formed by heating or the like.

[0254] In addition, examples of a method for forming the metal-containing film (d) 9 on the upper surface and side surface of the wiring (c) 4 and not disposing the metal-containing film on a portion of the upper surface of the wiring (c) 4 include, but are not limited to, a method in which a photoresist is formed on a portion of the upper surface of the wiring (c) 4 in advance, the metal-containing film (d) 9 is formed by a method such as sputtering, and then the photoresist is removed; or a method in which the metal-containing film (d) 9 is formed so as to cover the upper surface and side surface of the wiring (c) 4, and then a cured film (b) 3 having an opening pattern 20 formed thereon is formed, and then the metal-containing film (d) 9 on a portion of the upper surface of the wiring (c) 4 is removed by a method such as etching.

[0255] In this way, the wiring (c) 4 and the electrode 6 or the wiring (c) 4 itself can be directly connected without the interposition of a metal-containing film, thereby preventing an increase in resistance due to the metal-containing film (d) 9 and the metal-containing film (d1) 9a and suppressing electrical resistance.

[0256] The subsequent steps are almost the same as the step (Sd7) shown in FIG. 11-2g, the step (Sd8) shown in FIG. 11-2h, and the step (Sd9) shown in FIG. 11-2i, and therefore will not be described again.

[0257] The display device of the present invention is suitably used for display devices such as various LED displays and various vehicle-mounted lamps.

[0258] 17 shows an example of the manufacturing process of the seventh embodiment of the display device having the light-emitting diode of the present invention. Since the manufacturing process of the eighth or ninth embodiment is substantially the same as the manufacturing process of the seventh embodiment, the manufacturing process of the seventh embodiment will be described as a representative. Also, the manufacturing process of the tenth embodiment is substantially the same as the manufacturing process of the fifth embodiment.

[0259] 17-a, 17-b and 17-c are similar to FIGS. 11-1a, 11-1b and 11-1c, respectively, and therefore description thereof will be omitted.

[0260] 17-d shows a process (Te4) in which a resin film is formed by applying or laminating a resin composition containing resin (A) or a resin sheet formed from a resin composition containing resin (A) onto a substrate 5 and light-emitting diodes (a) 2, and then using a photolithography process to form an opening pattern that penetrates through to the substrate 5 in order to isolate the included light-emitting diodes (a) 2, and then curing the resin film to form a cured film (b1) 30. The resin film application method, drying, formation of the opening pattern by photolithography, ring-closing reaction, thermal crosslinking reaction, etc. can be the same as those described in FIG. 11-1.

[0261] Next, FIG. 17-e shows a step (Te5) of forming a metal-containing film (d2) 9b on the surface of the cured film (b1) 30 on which the opening pattern has been formed. After forming a photoresist layer (not shown), the metal-containing film (d2) 9b is formed by sputtering or the like. Next, FIG. 17-f shows a step (Te6) of forming a cured film (b) 3 on the surface of the substrate 5 and the metal-containing film (d2) 9b, and then forming an opening pattern 20. This is a step of forming a resin film that hardens to become the cured film (b) 3, forming an opening pattern 20 by photolithography, and then hardening to form the cured film (b) 3. The opening pattern 20 is formed so as to penetrate to the upper electrode 6 of the light-emitting diode (a) 2.

[0262] Next, FIG. 17-g shows a step (Te6) of forming the opening pattern 20 in the cured film (b) 3 and wiring (c) 4 on a part of the surface of the cured film (b) 3 by sputtering.

[0263] Subsequent steps are similar to those shown in FIGS. 11-2f, 11-2g and 11-2h, and a display device D having a plurality of light-emitting diodes (a) 2 shown in FIG. 17-h can be obtained.

[0264] The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

[0265] The display devices in the examples and the cured films made of the resin compositions used in the display devices were evaluated by the following methods.

[0266] <Method for Evaluating the Influence of the Presence or Absence of a Metal-Containing Film on Wiring> A substrate was prepared by forming a copper film as wiring (c) on an 8-inch silicon wafer by sputtering or plating to a film thickness of 0.5 to 5 μm. The substrate was then cleaved into 5 cm square pieces, and a varnish made of a resin composition was spin-coated to a film thickness of 1 to 10 μm after heat treatment, followed by pre-baking at 120°C for 3 minutes. Thereafter, using a high-temperature clean oven CLH-21CD-S manufactured by Koyo Thermo Systems Co., Ltd., the temperature was raised from 50°C to a heating temperature at a rate of 3.5°C / min under a nitrogen stream with an oxygen concentration of 100 ppm or less, followed by heat treatment for 1 hour at the heating temperature after the temperature increase, and the coated film was dried and heat-treated to obtain a cured film. The film thickness of the coating film after pre-baking and after development was measured using an optical interference type film thickness measuring device Lambda Ace STM-602 manufactured by Dainippon Screen Mfg. Co., Ltd., with a refractive index of 1.629, and the film thickness of the cured film was measured with a refractive index of 1.629.

[0267] On the cured film thus obtained, a titanium film was formed as a metal-containing film by sputtering to a thickness of 0.1 to 0.5 μm. The film was then treated in an air atmosphere at 175°C for 200 hours. After treatment, a cross section was taken and observed using an electron microscope (SEM).

[0268] Regarding the evaluation level (1), a level I was given for a sample in which no copper oxide or void formation was observed, and a level V was given for a sample in which copper oxide or void formation was observed.

[0269] <Method for Evaluating the Weight Loss Rate of Cured Film> A varnish made of a resin composition was spin-coated onto an 8-inch silicon wafer so that the film thickness after heat treatment would be 10 μm or more, and the wafer was pre-baked at 120°C for 3 minutes. Using a high-temperature clean oven CLH-21CD-S manufactured by Koyo Thermo Systems Co., Ltd., the wafer was heated from 50°C to 250°C at a rate of 3.5°C / min under a nitrogen stream with an oxygen concentration of 100 ppm or less, and then heat-treated for 1 hour at the heating temperature after the temperature increase, thereby drying and heat-treating the coated film to obtain a cured film. The thicknesses of the coated film after pre-baking and development were measured using a Lambda Ace STM-602 optical interference film thickness measuring device manufactured by Dainippon Screen Mfg. Co., Ltd., with a refractive index of 1.629, and the thickness of the cured film was measured with a refractive index of 1.629. If the film thickness was insufficient, the varnish was again spin-coated after pre-baking or curing, and the film thickness was adjusted by, for example, heat treatment.

[0270] The cured film thus obtained was peeled from the substrate using hydrofluoric acid, and the resulting cured film was heated to 120°C at a heating rate of 40°C / min using a thermogravimetric analyzer (manufactured by Shimadzu Corporation), held at 120°C for 10 minutes, then heated to 250°C at a heating rate of 10°C / min, and held at 250°C for 60 minutes. The weight loss rate (M1-M2) / M1 was calculated, where M1 is the weight of the cured film when it reached 250°C and M2 is the weight of the cured film after being held at 250°C for 1 hour.

[0271] Regarding the evaluation level (2), a value between 0 and 0.009 was classified as Level I, a value between 0.009 and 0.015 was classified as Level II, and a value greater than 0.015 was classified as Level V.

[0272] <Evaluation of opening pattern shape of cured film made of resin composition> A varnish made of the resin composition was prepared and applied to an 8-inch silicon wafer by spin coating using a coating and developing apparatus ACT-8 (manufactured by Tokyo Electron Limited) so that the film thickness after heating would be 3 μm, followed by pre-baking to prepare a pre-baked film. Pre-baking was carried out at 120°C for 3 minutes. Thereafter, an i-line stepper (manufactured by Nikon Corporation, NSR-2205i14) was used to apply 50 to 1000 mJ / cm ２The exposure was performed with an exposure dose of 1000 ppm. The size of the circular pattern used for exposure was 5 to 30 μm. After exposure, the film was developed using a 2.38% by mass aqueous solution of tetramethylammonium (TMAH) (manufactured by Tama Chemicals Co., Ltd.) under conditions such that the change in film thickness in the unexposed areas before and after development was 0.1 to 1.5 μm. The film was then rinsed with pure water and shaken dry to obtain a patterned film. Alternatively, the film was developed using cyclopentanone and shaken dry to obtain a patterned film. In the case of a non-photosensitive material, a photoresist was formed before exposure, followed by exposure and development, and the photoresist was removed after development. The film thickness after pre-baking and development was measured using a Lambda Ace STM-602 optical interference film thickness measuring device manufactured by Dainippon Screen Mfg. Co., Ltd., with a refractive index of 1.629.

[0273] After the development, the pattern-forming film was cured by heating in an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.) under a nitrogen stream with an oxygen concentration of 20 ppm or less at a rate of 3.5°C / min from 50°C to 250°C for 1 hour, thereby obtaining a cured film.

[0274] When the temperature reached 50°C or less, the wafer was removed, and then the wafer was cleaved to observe and measure the cross-sectional shape of the 2 to 30 µm circular pattern using a scanning electron microscope S-4800 (manufactured by Hitachi High-Technologies Corporation). The angle of the slanted side was determined by connecting the opening pattern at a position halfway along the thickness direction of the cured film with the opening pattern at the bottom.

[0275] Regarding the evaluation level (3), the angle of the inclined side was evaluated as Level I when it was 55° or more and 85° or less, Level II when it was 40° or more and less than 55° or more than 85° and 90° or less, and Level III when it was less than 40° or more than 90°.

[0276] Synthesis Example 1: Synthesis of Hydroxyl Group-Containing Diamine Compound 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (manufactured by Central Glass Co., Ltd., hereinafter referred to as BAHF) was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide (manufactured by Tokyo Chemical Industry Co., Ltd.), and the solution was cooled to −15°C. To this solution, a solution prepared by dissolving 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride (manufactured by Tokyo Chemical Industry Co., Ltd.) in 100 mL of acetone was added dropwise. After completion of the dropwise addition, the mixture was stirred at −15°C for 4 hours and then returned to room temperature. The precipitated white solid was filtered and dried in vacuo at 50°C.

[0277] 30 g of the obtained white solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve, and 2 g of 5% palladium-carbon (manufactured by Wako Pure Chemical Industries, Ltd.) was added. Hydrogen was introduced into the autoclave using a balloon, and a reduction reaction was carried out at room temperature. After approximately 2 hours, the reaction was terminated when it was confirmed that the balloon no longer deflated. After the reaction was completed, the palladium compound catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl group-containing diamine compound represented by the following formula:

[0278]

[0279] Synthesis Example 2: Synthesis of Polyimide Precursor (A1) Under a dry nitrogen stream, 51.9 g (0.086 mol) of the hydroxyl group-containing diamine obtained in Synthesis Example 1 and 1.0 g (0.004 mol) of SiDA were dissolved in 200 g of NMP. 31.0 g (0.10 mol) of ODPA was added thereto, and the mixture was stirred at 40°C for 2 hours. 1.1 g (0.01 mol) of 3-aminophenol (manufactured by Tokyo Chemical Industry Co., Ltd.) as an end-capping agent was then added together with 10 g of NMP, and the mixture was allowed to react at 40°C for 1 hour. Subsequently, a solution prepared by diluting 7.1 g (0.06 mol) of dimethylformamide dimethyl acetal (manufactured by Mitsubishi Rayon Co., Ltd., hereinafter referred to as DFA) with 5 g of NMP was added dropwise. After the dropwise addition, stirring was continued at 40°C for 2 hours. After stirring was completed, the solution was poured into 2 L of water, and the polymer solid precipitate was collected by filtration. The solid was further washed three times with 2 L of water, and the collected polymer solid was dried in a vacuum dryer at 50° C. for 72 hours to obtain a polyimide precursor (A1).

[0280] Synthesis Example 3: Synthesis of Polybenzoxazole Precursor (A2) Under a dry nitrogen stream, 27.5 g (0.075 mol) of BAHF was dissolved in 257 g of NMP. To this was added 17.2 g (0.048 mol) of PBOM along with 20 g of NMP, and the mixture was allowed to react at 85°C for 3 hours. Subsequently, 20.0 g (0.02 mol) of RT-1000 (manufactured by HUNTSMAN Corporation), 1.2 g (0.005 mol) of SiDA, and 14.3 g (0.04 mol) of PBOM were added along with 50 g of NMP, and the mixture was allowed to react at 85°C for 1 hour. Furthermore, 3.9 g (0.024 mol) of NA as a terminal blocking agent was added along with 10 g of NMP, and the mixture was allowed to react at 85°C for 30 minutes. After the reaction was completed, the mixture was cooled to room temperature, and 52.8 g (0.50 mol) of acetic acid was added together with 87 g of NMP, followed by stirring at room temperature for 1 hour. After stirring was completed, the solution was poured into 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a forced air dryer at 50°C for 3 days to obtain a powder of polybenzoxazole precursor (A2).

[0281] Synthesis Example 4: Synthesis of Polyimide (A3) Under a dry nitrogen stream, 29.3 g (0.08 mol) of BAHF, 1.2 g (0.005 mol) of SiDA, and 3.3 g (0.03 mol) of 3-aminophenol as an end-capping agent were dissolved in 80 g of NMP. 31.2 g (0.1 mol) of ODPA was added to the solution together with 20 g of NMP, and the mixture was reacted at 60°C for 1 hour, followed by stirring at 180°C for 4 hours. After stirring, the solution was poured into 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 20 hours to obtain a powder of polyimide (A3).

[0282] Synthesis Example 5: Synthesis of Photosensitizer (Quinonediazide Compound (B1)) Under a dry nitrogen stream, 21.2 g (0.05 mol) of 4,4'-[1-[4-[1-(4-hydroxyphenyl-1)-1-methylethyl]phenyl]ethylidene]bisphenol (manufactured by Honshu Chemical Industry Co., Ltd., hereinafter referred to as TrisP-PA) and 26.8 g (0.10 mol) of 5-naphthoquinonediazide sulfonic acid chloride (manufactured by Toyo Gosei Co., Ltd., NAC-5) were dissolved in 450 g of γ-butyrolactone at room temperature. 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise to the solution so that the temperature in the system did not exceed 35°C. After the dropwise addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered off, and the filtrate was poured into water. The precipitate was then collected by filtration and washed with 1 L of 1% aqueous hydrochloric acid, then washed twice with 2 L of water, and dried in a vacuum dryer to obtain a quinone diazide compound (B1) represented by the following formula:

[0283]

[0284] Synthesis Example 6: Synthesis of Photosensitizer (Quinonediazide Compound (B2)) Under a dry nitrogen stream, 21.2 g (0.05 mol) of TrisP-PA and 26.8 g (0.10 mol) of 4-naphthoquinonediazide sulfonic acid chloride (NAC-5, manufactured by Toyo Gosei Co., Ltd.) were dissolved in 450 g of γ-butyrolactone at room temperature. 12.7 g of triethylamine mixed with 50 g of γ-butyrolactone was added dropwise thereto so that the temperature in the system did not exceed 35°C. After the dropwise addition, the mixture was stirred at 40°C for 2 hours. The triethylamine salt was filtered, and the filtrate was poured into water. The precipitate was then collected by filtration and washed with 1 L of 1% aqueous hydrochloric acid. The mixture was then washed twice with 2 L of water. The precipitate was dried in a vacuum dryer to obtain quinonediazide compound (B2) represented by the following formula:

[0285]

[0286] Synthesis Example 7: Synthesis of Acrylic Resin (A4) 33 g of methyl methacrylate, 33 g of styrene, 34 g of methacrylic acid, 3 g of 2,2'-azobis(2-methylbutyronitrile), and 150 g of propylene glycol monomethyl ether acetate (hereinafter, "PGMEA") were charged into a polymerization vessel and stirred at 90°C for 2 hours. The liquid temperature was then raised to 100°C and the mixture was allowed to react for an additional 1 hour. 33 g of glycidyl methacrylate, 1.2 g of dimethylbenzylamine, and 0.2 g of p-methoxyphenol were added to the resulting reaction solution and stirred at 90°C for 4 hours. Upon completion of the reaction, 50 g of PGMEA was added to obtain a solution of acrylic resin (A4) (solids content: 40% by mass). The acid value of the acrylic resin (A4) was 80.0 (mg / KOH / g) and the weight average molecular weight (Mw) was 22,000.

[0287] Synthesis Example 8: Synthesis of Acrylic Resin (A5) A methyl methacrylate / methacrylic acid / styrene copolymer (weight ratio 30 / 40 / 30) was synthesized by the method described in Example 1 of Japanese Patent No. 3120476. 40 parts by weight of glycidyl methacrylate was added to 100 parts by weight of the obtained copolymer, and the mixture was reprecipitated in purified water, filtered, and dried to obtain a resin (A5) having a weight average molecular weight of 15,000 and an acid value of 110 mgKOH / g.

[0288] Preparation Example 1: Production of Colorant Dispersion (DC1) Zirconia compound particles Zr-1 (manufactured by Nisshin Engineering Inc.) produced by a thermal plasma method were used as the colorant. 200 g of Zr-1, 114 g of a 35 wt % solution of acrylic polymer (P-1) in propylene glycol monomethyl ether acetate (PGMEA), 25 g of "DISPERBYK (registered trademark)" LPN-21116 having a tertiary amino group and a quaternary ammonium salt as a polymer dispersant, and 661 g of PGMEA were charged into a tank and stirred for 20 minutes with a homomixer to obtain a preliminary dispersion. The obtained preliminary dispersion was supplied to an Ultra Apex Mill disperser manufactured by Kotobuki Industries Co., Ltd., equipped with a centrifugal separator filled with 75% by volume of 0.05 mmφ zirconia beads, and dispersion was carried out for 3 hours at a rotation speed of 8 m / s, thereby obtaining a colorant dispersion (DC1) having a solid content concentration of 25% by weight and a colorant / resin (weight ratio) of 80 / 20.

[0289] Preparation Example 2: Preparation of Photosensitive Colored Resin Composition 7 To 283.1 g of the colorant dispersion (DC1), 184.4 g of a 35 wt % solution of resin (A5) in PGMEA, 50.1 g of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd.) as a polyfunctional monomer, 7.5 g of "Irgacure (registered trademark)" 907 (manufactured by BASF) as a photopolymerization initiator, and 10 g of "KAYACURE (registered trademark)" DETX-S (manufactured by Nippon Kayaku Co., Ltd.) were added. 3.8 g of KBM5103 (manufactured by Shin-Etsu Chemical Co., Ltd.) as an adhesion improver, 12.0 g of a solution of 3 g of a 10 wt % solution of silicone surfactant "BYK (registered trademark)" 333 (manufactured by BYK-Chemie Co., Ltd.) in PGMEA (456.1 g) was added as a surfactant, and a photosensitive colored resin composition 7 having a total solids concentration of 20 wt % and a colorant / resin (weight ratio) = 30 / 70 was obtained.

[0290] The components (A4), (B3), (C1), (C2), other components, and solvents used in the examples and comparative examples are shown below. (A4) Phenolic resin MEHC-7851 (manufactured by Meiwa Kasei Co., Ltd.) (C1) HMOM-TPHAP (manufactured by Honshu Chemical Industry Co., Ltd.) (C2) MX-270 (manufactured by Sanwa Chemical Co., Ltd.) (C3) VG3101L (manufactured by Mitsubishi Chemical Corporation) (B3): Photopolymerization initiator NCI-831E (manufactured by ADEKA Corporation) (B4): Photopolymerization initiator PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.) Other components: (F1): Dipentaerythritol hexaacrylate (DPHA, manufactured by Kyoeisha Chemical Co., Ltd.) (F2): M-315 (trade name "Aronix", manufactured by Toagosei Co., Ltd.) Solvent: GBL: γ-butyrolactone Table 1 shows the formulation of the resin composition composed of resin (A), photosensitizer (B), thermal crosslinker (C), and other ingredients. Resin compositions 1 to 5 were prepared using the solvents listed in Table 1. Table 2 also shows the resin compositions used in the examples, the heat treatment temperature, the types of wiring and metal-containing films, an evaluation of the effect on the wiring, an evaluation of the weight loss of the cured film, and the angle of the inclined sides of the opening pattern.

[0291]

[0292]

[0293]

[0294] [Correction based on Rule 91 27.02.2025] (Example 1) (First embodiment) A display device 1 according to the first embodiment was obtained by forming a cured film (b) 3 made of resin composition 1 to a thickness of 5 μm, a wiring (c) 4 made of Cu to a thickness of 3 μm, and a metal-containing film (d) 9 made of Ti to a thickness of 0.1 μm. (Examples 2-5) Display devices 2-5 were obtained by the same method as in Example 1, except that resin composition 1 in Example 1 was replaced with resin compositions 2-5. (Example 6) (Second embodiment) A display device 6 according to the second embodiment was obtained by forming a cured film (b) 3 made of resin composition 2 to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti to a thickness of 0.1 μm, and a metal-containing film (d1) 9a made of Ti to a thickness of 0.1 μm. (Example 7) (Third embodiment) A cured film (b) 3 made of a resin composition 2 was formed to a thickness of 10 μm, a wiring (c) 4 made of Cu was formed to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti was formed to a thickness of 0.1 μm, and a metal-containing film (d1) 9a made of Ti was formed to a thickness of 0.1 μm, to obtain a display device 7 made of the third embodiment. (Example 8) (Fourth embodiment) A cured film (b) 3 made of a resin composition 2 was formed to a thickness of 10 μm, a wiring (c) 4 made of Cu was formed to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti was formed to a thickness of 0.1 μm, and a metal-containing film (d1) 9a made of Ti was formed to a thickness of 0.1 μm, to obtain a display device 8 made of the fourth embodiment. (Example 9) (Fifth embodiment) A display device 9 according to the fifth embodiment was obtained by forming a cured film (b) 3 made of a resin composition 2 to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti to a thickness of 0.1 μm, and a metal-containing film (d1) 9a made of Ti to a thickness of 0.1 μm. (Example 10) (Sixth embodiment) A display device 10 according to the sixth embodiment was obtained by forming a cured film (b) 3 made of a resin composition 2 to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti to a thickness of 0.1 μm, and a metal-containing film (d1) 9a made of Ti to a thickness of 0.1 μm. (Example 11) A display device 11 was obtained in the same manner as in Example 10, except that the thickness of the metal-containing film (d) 9 was 0.3 μm. Example 12 A display device 12 was obtained in the same manner as in Example 6, except that the metal-containing film (d) 9 was formed to have a thickness of 0.5 μm.(Example 13) A display device 13 was obtained in the same manner as in Example 7, except that the metal-containing film (d) 9 was formed to a thickness of 0.5 μm. (Example 14) A display device 14 was obtained in the same manner as in Example 10, except that the cured film (b) 3 made of resin composition 2 was formed to a thickness of 2 μm, and the wiring (c) 4 made of Cu was formed to a thickness of 1 μm. (Example 15) A display device 15 was obtained in the same manner as in Example 10, except that the cured film (b) 3 made of resin composition 2 was formed to a thickness of 1 μm, the wiring (c) 4 made of Cu was formed to a thickness of 0.5 μm, and the metal-containing film (d) 9 was formed to a thickness of 0.3 μm. (Example 16) A display device 16 was obtained in the same manner as in Example 2, except that the metal-containing film (d) 9 made of Au was formed to a thickness of 0.1 μm. (Example 17) A display device 17 was obtained in the same manner as in Example 10, except that the metal-containing film (d) 9 made of Au was formed to a thickness of 0.1 μm. (Example 18) A display device 20 was obtained in the same manner as in Example 6, except that the thickness of the metal-containing film (d) 9 made of Cr was 0.1 μm and the thickness of the metal-containing film (d1) 9a made of Cr was 0.1 μm. (Example 19) A display device 21 was obtained in the same manner as in Example 6, except that the thickness of the metal-containing film (d) 9 made of Cr was 0.1 μm. (Example 20) (Seventh Embodiment) A cured film (b) 3 made of resin composition 2 was formed to a thickness of 7 μm, wiring (c) 4 made of Cu was formed to a thickness of 3 μm, a metal-containing film (d) 9 made of Ti was formed to a thickness of 0.1 μm, a metal-containing film (d2) 9b made of Ti was formed to a thickness of 0.1 μm, and a cured film (b1) 30 made of resin composition 2 was formed to a thickness of 5 μm, to obtain a display device 22 according to the seventh embodiment. (Example 21) (Eighth embodiment) A cured film (b) 3 made of resin composition 2 was formed to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a film (d) 9 containing a metal made of Ti to a thickness of 0.1 μm, a film (d1) 9a containing a metal made of Ti to a thickness of 0.1 μm, a film (d2) 9b containing a metal made of Ti to a thickness of 0.1 μm, and a cured film (b1) 30 made of resin composition 2 to a thickness of 7 μm, thereby obtaining a display device 23 according to the eighth embodiment.(Example 22) (Ninth embodiment) A cured film (b) 3 made of resin composition 2 was formed to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a film (d) 9 containing a metal made of Ti to a thickness of 0.1 μm, a film (d1) 9a containing a metal made of Ti to a thickness of 0.1 μm, a film (d2) 9b containing a metal made of Ti to a thickness of 0.1 μm, and a cured film (b1) 30 made of resin composition 2 to a thickness of 7 μm, thereby obtaining a display device 24 of the ninth embodiment. (Example 23) (10th embodiment) A cured film (b) 3 made of resin composition 2 was 10 μm, a wiring (c) 4 made of Cu was 5 μm, a metal-containing film (d) 9 made of Ti was 0.1 μm, a metal-containing film (d1) 9a made of Ti was 0.1 μm, a metal-containing film (d2) 9b made of Ti was 0.1 μm, and a cured film (b2) 32 made of the photosensitive colored resin composition 7 obtained in Preparation Example 2 was formed to be 0.5 μm, thereby obtaining a display device 25 according to the 10th embodiment. (Example 24) A display device 26 was obtained in the same manner as in Example 21, except that the thickness of the metal-containing film (d2) 9b made of Cr was 0.1 μm, and the cured film (b1) 30 made of resin composition 6 was formed to be 7 μm. (Example 25) The display device 27 was obtained in the same manner as in Example 21, except that the thickness of the film (d2) 9b containing metal made of Cr was 0.1 μm, and the cured film (b2) 32 made of the photosensitive colored resin composition 7 was formed to be 7 μm.

[0295] By covering at least a portion of the wiring (c) 4 with the metal-containing film (d) 9 or the metal-containing film (d1) 9a, corrosion due to migration of the wiring (c) 4 into the cured film (b) 3, oxidation of the wiring (c) 4 due to external oxygen or moisture, or outgassing from the cured film (b) 3, etc., was prevented even in high-temperature environments. This prevented deterioration of the light-emitting diode's light-emitting characteristics. Furthermore, because the cured films made from resin compositions 1 to 5 experienced minimal weight loss, they were effective in preventing poor conduction between the metal-containing film (d) 9 or the metal-containing film (d1) 9a and the wiring (c) 4. Furthermore, because resin compositions 1 to 5 formed a forward tapered shape, they were able to prevent formation defects such as cracks and thickness variations in the metal-containing film (d) 9 or the wiring (c) 4 formed in the opening. As a result, display devices 1 to 17 and 20 to 27 were able to prevent poor conduction due to peeling between the metal-containing film (d) 9 or the metal-containing film (d1) 9a and the wiring (c) 4 during the manufacturing process. Furthermore, by covering at least a portion of the wiring (c) 4 with the metal-containing film (d) 9 or the metal-containing film (d1) 9a, it was possible to suppress a deterioration in the light-emitting characteristics of the light-emitting diode. This effect was particularly pronounced in display devices 6 to 15, 17, and 20 to 21. In display devices 7, 9 to 11, 13 to 15, and 17, the wiring (c) 4 and the electrode 6 or wiring (c) 4 were directly connected without the metal-containing film (d) 9, thereby preventing an increase in resistance due to the metal-containing film (d) 9 and suppressing electrical loss. Furthermore, in display devices 22 to 25, a structure in which the metal-containing film (d2) 9b covers at least a portion of the surface of the light-emitting diode (a) 2 other than the light extraction surface was formed, thereby preventing light from the light-emitting diode (a) 2 from being irradiated onto the cured film (b) 3, thereby suppressing deterioration of the cured film (b) 3 in high-temperature environments, preventing corrosion due to oxidation of the wiring (c) 4, and suppressing deterioration of the cured film (b1) 30 due to oxygen and moisture in high-temperature environments. Therefore, it was possible to suppress the deterioration of the light emitting characteristics of the light emitting diode (a) 2. (Comparative Example 1) A display device 18 of the first embodiment was obtained by forming a cured film (b) 3 made of a resin composition 4 to a thickness of 5 μm, a wiring (c) 4 made of Cu to a thickness of 3 μm, and not forming a film (d) 9 containing metal.Comparative Example 2 A display device 19 according to the second embodiment was obtained by forming a cured film (b) 3 made of a resin composition 4 to a thickness of 5 μm, a wiring (c) 4 made of Cu to a thickness of 10 μm, and a metal-containing film (d1) 9a made of Ti to a thickness of 0.1 μm, without forming a metal-containing film (d) 9.

[0296] By not forming the metal-containing film (d) 9, corrosion due to oxidation of Cu and voids were observed. As a result, the display devices 18 and 19 showed a decrease in the light-emitting characteristics of the light-emitting diodes.

[0297]

[0298] (Example 26) (Seventh embodiment) A cured film (b) 3 made of resin composition 1 was formed to a thickness of 7 μm, wiring (c) 4 made of Cu was formed to a thickness of 3 μm, a metal-containing film (d) 9 made of Ti was formed to a thickness of 0.1 μm, a metal-containing film (d2) 9b made of Ti was formed to a thickness of 0.1 μm, and a cured film (b1) 30 made of resin composition 1 was formed to a thickness of 5 μm, thereby obtaining a display device 28 according to the seventh embodiment. (Examples 27 to 30) The same method as in Example 26 was carried out, except that the resin composition 1 in Example 26 was changed to resin compositions 2 to 5, and displays 29 to 32 were obtained. (Example 31) (Eighth embodiment) A display device 33 according to the eighth embodiment was obtained by forming a cured film (b) 3 made of a resin composition 2 to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a film (d) 9 containing a metal made of Ti to a thickness of 0.1 μm, a film (d1) 9a containing a metal made of Ti to a thickness of 0.1 μm, a film (d2) 9b containing a metal made of Ti to a thickness of 0.1 μm, and a cured film (b1) 30 made of a resin composition 2 to a thickness of 7 μm. Example 32 (Ninth embodiment) A display device 34 according to the ninth embodiment was obtained by forming a cured film (b) 3 made of a resin composition 2 to a thickness of 10 μm, a wiring (c) 4 made of Cu to a thickness of 5 μm, a film (d) 9 containing a metal made of Ti to a thickness of 0.1 μm, a film (d1) 9a containing a metal made of Ti to a thickness of 0.1 μm, a film (d2) 9b containing a metal made of Ti to a thickness of 0.1 μm, and a cured film (b1) 30 made of a resin composition 2 to a thickness of 7 μm. (Example 33) (10th embodiment) A cured film (b) 3 made of resin composition 2 was formed to a thickness of 10 μm, a wiring (c) 4 made of Cu was formed to a thickness of 5 μm, a metal-containing film (d) 9 made of Ti was formed to a thickness of 0.1 μm, a metal-containing film (d1) 9a made of Ti was formed to a thickness of 0.1 μm, a metal-containing film (d2) 9b made of Ti was formed to a thickness of 0.1 μm, and a cured film (b2) 32 made of photosensitive colored resin composition 7 was formed to a thickness of 0.5 μm, thereby obtaining a display device 35 according to the tenth embodiment. (Example 34) A display device 36 was obtained in the same manner as in Example 31, except that a cured film (b1) 30 made of resin composition 6 was formed to a thickness of 7 μm. (Example 35) Preparation Example 2 A display device 37 was obtained in the same manner as in Example 31, except that a cured film (b1) 30 made of photosensitive colored resin composition 7 was formed to a thickness of 7 μm.(Example 36) A display device 38 was obtained in the same manner as in Example 30, except that the metal-containing film (d) 9 was formed to a thickness of 0.3 μm. (Example 37) A display device 39 was obtained in the same manner as in Example 30, except that the metal-containing film (d) 9 was formed to a thickness of 0.5 μm. (Example 38) A display device 40 was obtained in the same manner as in Example 31, except that the metal-containing film (d) 9 was formed to a thickness of 0.5 μm. (Example 39) A display device 41 was obtained in the same manner as in Example 31, except that the metal-containing film (d) 9 made of Au was formed to a thickness of 0.1 μm. (Example 40) A display device 42 was obtained in the same manner as in Example 31, except that the metal-containing film (d) 9 made of Cr was formed to a thickness of 0.1 μm and the metal-containing film (d1) 9a made of Cr was formed to a thickness of 0.1 μm. (Example 41) A display device 43 was obtained in the same manner as in Example 31, except that the thickness of the metal-containing film (d) 9 made of Cr was 0.1 μm. (Example 42) A display device 44 was obtained in the same manner as in Example 31, except that the thickness of the metal-containing film (d2) 9b made of Ti was 0.3 μm. (Example 43) A display device 45 was obtained in the same manner as in Example 31, except that the thickness of the metal-containing film (d2) 9b made of Ti was 0.5 μm. (Example 44) A display device 46 was obtained in the same manner as in Example 31, except that the thickness of the metal-containing film (d2) 9b made of Cr was 0.1 μm. (Example 45) A display device 47 was obtained in the same manner as in Example 31, except that the thickness of the metal-containing film (d2) 9b made of Cr was 0.5 μm.

[0299] By forming a structure in which the metal-containing film (d2) 9b covers at least a part of the surface other than the light extraction surface of the light-emitting diode (a) 2, light from the light-emitting diode (a) 2 is prevented from being irradiated onto the cured film 3(b), thereby suppressing deterioration of the cured film (b) 3 in a high-temperature environment, preventing corrosion due to oxidation of the wiring (c) 4, and suppressing deterioration of the cured film (b1) 30 due to oxygen and moisture in a high-temperature environment. As a result, deterioration of the light-emitting characteristics of the light-emitting diode (a) 2 can be suppressed.

[0300] Furthermore, because the cured films made from resin compositions 1 to 5 experienced minimal weight loss, they were effective in suppressing poor electrical continuity between the metal-containing film (d) 9 and the wiring (c) 4. Furthermore, because resin compositions 1 to 5 formed a forward tapered shape, they were able to suppress formation defects such as cracks and thickness variations in the metal-containing film (d) 9 and wiring (c) 4 formed in the opening. As a result, display devices 28 to 47 were able to suppress poor electrical continuity due to peeling between the metal-containing film (d) 9 or metal-containing film (d1) 9a and the wiring (c) 4 during the manufacturing process. Furthermore, because the metal-containing film (d) 9 or metal-containing film (d1) 9a covered at least a portion of the wiring (c) 4, they were able to suppress deterioration of the light-emitting characteristics of the light-emitting diode (a) 2. The effect was particularly pronounced in display devices 33 to 37 and 40 to 47. In the display device 34, the wiring (c) 4 and the electrode 6 or the wiring (c) 4 were directly connected without the metal-containing film (d) 9, thereby preventing an increase in resistance due to the metal-containing film (d) 9 and suppressing electrical loss. (Comparative Example 3) A 5 μm thick cured film (b) 3 made of resin composition 4 and a 3 μm thick wiring (c) 4 made of Cu were formed, and the metal-containing film (d) 9 was not formed, resulting in a display device 49 made of the first embodiment. (Comparative Example 4) A 5 μm thick cured film (b) 3 made of resin composition 4, a 10 μm thick wiring (c) 4 made of Cu, and a 0.1 μm thick metal-containing film (d1) 9a made of Ti were formed, and the metal-containing film (d) 9 was not formed, resulting in a display device 50 made of the second embodiment.

[0301] By not forming the metal-containing film (d) 9, corrosion due to oxidation of Cu and voids were observed. As a result, the display devices 18 and 19 showed a decrease in the light-emitting characteristics of the light-emitting diodes.

[0302] [Correction based on Rule 91 27.02.2025] D Display device 2 Light-emitting diode (a) 3 Cured film (b) 4, 4a, 4c, 4d, 4e, 4f, 4g Wiring (c) 5 Substrate 6 Electrode 7 Light-emitting diode drive substrate 8 Drive element 9 Metal-containing film (d) 9a Metal-containing film (d1) 9b Metal-containing film (d2) 10 Bump 11 Total thickness of cured film 12 Designated area J 13 Designated area K 14 Designated area L 15 Designated area M 16 Designated area N 17a, 17b Connection part 18 Connection part 19 Connection part 20 Opening pattern 21 Resin film 23 Sloped edge 24 Sloped edge angle 25 Thickness of cured film (b) 3 26 Position of half the thickness of cured film (b) 3 27 Side wiring 28 Designated area P 29 Emitted light 30 Cured film (b1) 31 Designated area Q 32 Cured film (b2)

Claims

1. A display device including at least a light-emitting diode (a), a cured film (b), a wiring (c), and a film (d) containing a metal, wherein the light-emitting diode (a) is electrically connected to the wiring (c), the cured film (b) is obtained from a resin composition containing a resin (A), the wiring (c) has a three-dimensional shape having at least two or more planes, the film (d) containing a metal covers at least a part of the surface of the wiring (c), and the cured film (b) has at least one structure covering at least a part of the surface of the film (d) containing a metal.

2. The display device according to claim 1, wherein the weight loss rate (M1 - M2) / M1 of the cured film (b) measured according to the following measurement condition 1 is 0.015 or less. [Measurement condition 1] Using a thermogravimetric analyzer, the temperature is raised from 120°C at a heating rate of 10°C / min to reach 250°C, and the weight of the cured film (b) at this time is M1, and after holding the cured film (b) at 250°C for 1 hour, the weight of the cured film (b) is M2.

3. Further including a film (d1) containing a metal, wherein the film (d1) containing a metal is in contact with at least a part of the lower surface of the wiring (c), and the display device according to claim 1 or 2 has at least one part having a laminated structure in which the cured film (b), the film (d1) containing a metal, the wiring (c), and the film (d) containing a metal are laminated in this order.

4. [Correction based on Rule 91, 27.02.2025] The display device according to claim 1 or 3, wherein the shape of the opening of the cured film (b) is a forward taper shape.

5. Further including a film (d2) containing a metal, and the display device according to claim 1 or 3 has at least one structure in which the film (d2) containing a metal covers at least a part of the surface other than the light extraction surface of the light-emitting diode (a).

6. At least one part is provided with a film (d) containing a metal and / or a film (d1) containing a metal interposed between the electrode provided in the light-emitting diode (a) and the wiring (c) at the connection part between the electrode and the wiring (c). The display device according to claim 1 or 3.

7. In a wiring layer having a plurality of layers including the wiring (c) and the cured film (b), at least one part is provided with a film (d) containing a metal and / or a film (d1) containing a metal interposed between the wirings (c) at the connection part between the wirings (c). The display device according to claim 1 or 3.

8. In the connection part between the electrode provided in the light-emitting diode (a) and the wiring (c), the electrode and the wiring (c) are connected, and there is at least one part around the connection part between the electrode and the wiring (c) where the film (d) containing the metal and / or the film (d1) containing the metal is formed. The display device according to claim 1 or 3.

9. In the wiring layer having a plurality of layers including the wiring (c) and the layer including the cured film (b), the wirings (c) are connected, and there is at least one part around the connection part between the wirings (c) where the film (d) containing the metal and / or the film (d1) containing the metal is formed. The display device according to claim 1 or 3.

10. The display device according to claim 1 or 3, wherein the main components constituting the wiring (c) and the film (d) containing the metal are different materials.

11. A display device including at least a light-emitting diode (a), a cured film (b), a wiring (c), and a film (d2) containing a metal, wherein the cured film (b) is obtained from a resin composition containing a resin (A), and the film (d2) containing the metal has a structure covering at least a part of the surface other than the light extraction surface of the light-emitting diode (a) in at least one part.

12. The display device according to claim 1 or 3, wherein the length of one side of the light-emitting diode (a) is 5 μm or more and 700 μm or less.

13. The display device according to claim 1 or 3, wherein the resin (A) contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof.

14. The display device according to claim 1 or 3, wherein the resin composition containing the resin (A) further contains a photosensitizer (B).

15. The display device according to claim 1 or 3, wherein the resin composition containing the resin (A) further contains a thermal crosslinking agent (C), and the thermal crosslinking agent (C) is 1 part by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the resin (A).

16. The display device according to claim 14, wherein the thermal crosslinking agent (C) contains at least a compound (C1) having an alkoxymethyl group or a methylol group.

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