Illumination device for film growth process, and film growth process apparatus
By configuring a van der Waals material layer on the light-emitting surface of the illumination device, the contamination problem caused by reactant deposition is solved, ensuring the beam quality and extending the life of the equipment.
WO2025194609A1 Publication Date: 2025-09-25CHIU PO WEN
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Patent Information
- Application Number
- PCT/CN2024/100189
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-03-20
- Filing Date
- 2024-06-19
- Publication Date
- 2025-09-25
AI Technical Summary
Technical Problem
During the film growth process, reactants that are not completely removed are deposited in the cavity, causing contamination on the light-emitting surface of the lighting device, reducing the light output quality and shortening the service life of the equipment.
Method used
A van der Waals material layer is configured on the light-emitting surface of the light-emitting device, and its low defect concentration and no dangling bond characteristics are utilized to avoid reactant deposition, thereby improving the transmittance of the light-transmitting layer and the life of the device.
Benefits of technology
Effectively prevent reactants from depositing on the light-emitting surface, maintain beam quality, and extend equipment service life.
✦ Generated by Eureka AI based on patent content.
Abstract
A film growth process apparatus, comprising a main cavity and an illumination device. The illumination device comprises a light source, a light-transmitting layer and a van der Waals material layer. The light-transmitting layer comprises a light-exit surface distant from the light source. The van der Waals material layer has a defect concentration of lower than 1012cm-2 and is arranged on the light-exit surface of the light-transmitting layer. The van der Waals material layer serves as a part of the inner surface of the main cavity.
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