Device and method for manufacturing insulating film for semiconductor wafer

By electrospinning and thermally fusing nanofiber clusters on semiconductor wafers in a controlled manner, the method addresses sagging issues, ensuring uniform air gaps and enhanced device performance.

WO2025198254A1 Publication Date: 2025-09-25AIRGAPSILICONTECH CO LTD
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Patent Information

Application Number
PCT/KR2025/003292
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-22
Filing Date
2025-03-14
Publication Date
2025-09-25

AI Technical Summary

Technical Problem

Existing methods for forming air gaps in semiconductor wafers using nanofiber webs face issues such as sagging and uneven shape, leading to reduced efficiency and reliability of semiconductor devices due to conductive films penetrating into circuit patterns.

Method used

A method involving electrospinning a polymer solution to form nanofiber clusters on semiconductor wafers, followed by thermal fusion in a soft state, rotating, and then re-fusing in a hard state to create a flat insulating film with maximized air gaps, using a device with a thermal bonding unit and robot arm for precise handling.

Benefits of technology

The solution prevents sagging and ensures uniform air gaps, improving mechanical strength, process reliability, and reducing power consumption and heat generation in semiconductor devices.

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Abstract

The present invention relates to a device and a method for manufacturing an insulating film for a semiconductor wafer. More specifically, the present invention provides a device and a method for manufacturing an insulating film for a semiconductor wafer, wherein a nanofiber web is placed on a semiconductor wafer, the nanofiber web placed on a circuit pattern of the semiconductor wafer is primarily baked, thermally fused to the semiconductor wafer, and formed in a soft state, the semiconductor wafer, on which the nanofiber web has been thermally fused in a soft state, is rotated to place the nanofiber web beneath the semiconductor wafer, and the nanofiber web is then secondarily baked, and thermally fused to the semiconductor wafer, whereby a hardened insulating film can be formed, preventing sagging of the insulating film on the semiconductor wafer during heating, and reducing power consumption and heat generation of the semiconductor wafer. The device comprises: a housing for accommodating a semiconductor wafer on which a nanofiber web is electrospun by an electrospinning device; a robot arm for moving the semiconductor wafer, on which the nanofiber web is electrospun, into the housing; and a heat fusion unit which is installed inside the housing and thermally fuses the nanofiber web on the semiconductor wafer to form an insulating film on the semiconductor wafer.
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