High-side driving circuit, high-side driving method and battery management system
By using a single transistor combined with a control subcircuit and a drive circuit in the battery protection device, independent control of the charging circuit and the discharging circuit is achieved, solving the problems of complex structure and limited applicability in the existing technology, improving system reliability and reducing costs.
Patent Information
- Application Number
- PCT/CN2025/073023
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-04-03
- Filing Date
- 2025-01-17
- Publication Date
- 2025-10-09
AI Technical Summary
Existing battery protection devices have a complex structure and are only applicable to the case of combining two silicon-based N-type MOSFET transistors. They cannot be used in combination with a single transistor, and cannot achieve independent control of the charging circuit and the discharging circuit.
A single transistor (first transistor) is used in combination with a control sub-circuit, a drive start circuit, and a drive management circuit. By controlling the charging protection signal and the discharging protection signal, independent control of the charging circuit and the discharging circuit is achieved, which is suitable for scenarios with a single control transistor.
The structural complexity of the battery protection device is reduced, the design process is simplified, the reliability and maintainability of the system are improved, the development time is reduced, and the overall cost is reduced.