Substrate processing system and adjustment method

Abstract

This substrate processing system disclosed herein comprises a process module, a conveyance module, a distance measurement module, and a control unit. The distance measurement module includes a plurality of light input / output units and a processing circuit. The control unit is configured to execute a light amount adjustment operation. The light amount adjustment operation includes: (a) a step of moving an end effector above a reference object; (b) a step of irradiating the reference object with measurement light from each of the plurality of light input / output units and causing each of the plurality of light input / output units to receive reflected light from the reference object; and (c) a step of, when it is determined that the light amount of the reflected light obtained during the light reception period of the distance measurement module is less than or equal to a threshold, adjusting at least one of the conveyance module and the distance measurement module so as to increase the amount of light.

Description

Substrate Processing System and Adjustment Method

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing system and an adjustment method.

[0002] The substrate processing system is used in processing a substrate. The substrate processing system includes a process module, a transfer module, and a control unit. The process module includes a chamber and a substrate support portion disposed in the chamber. The transfer module includes a transfer device configured to transfer a substrate to a processing space in the chamber. Patent Document 1 below discloses a substrate processing system including a distance sensor. The distance sensor is configured to measure the distance between the end effector of the transfer device and the substrate support portion.

[0003] Japanese Patent Application Laid-Open No. 2022-174626

[0004] The present disclosure provides a technique for suppressing a decrease in the accuracy of the distance measurement module of a substrate processing system.

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system comprises a process module, a transport module, a distance measuring module, and a control unit. The process module has a chamber. The process module is configured to process substrates in the chamber. The transport module has a transport device. The transport device includes an end effector. The transport device is configured to transport substrates into the chamber. The distance measuring module includes a plurality of optical input / output units and a processing circuit. The plurality of optical input / output units are mounted on the end effector. Each of the plurality of optical input / output units is configured to irradiate a measurement light onto an object located below the end effector. Each of the plurality of optical input / output units is configured to receive reflected light from the object. The processing circuit is configured to obtain the distance between the object and each of the plurality of optical input / output units based on the reflected light received by each of the plurality of optical input / output units. The control unit is configured to perform light intensity adjustment operations. The light intensity adjustment operation includes (a) moving the end effector above the reference object, (b) irradiating the reference object with measurement light from each of the multiple optical input / output units so that each of the multiple optical input / output units receives reflected light from the reference object, and (c) if in (b) it is determined that the amount of reflected light obtained during the light reception period of the distance measurement module is below or less than a threshold, the step of adjusting at least one of the transport module and the distance measurement module to increase the light intensity.

[0006] According to one exemplary embodiment, the degradation of accuracy of the distance measuring module in the substrate processing system is suppressed.

[0007] Figure 1 is a diagram illustrating a substrate processing system according to one exemplary embodiment. Figure 2 is a diagram illustrating an example configuration of a plasma processing system. Figure 3 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. Figure 4 is a top view showing an example configuration of a distance measuring module. Figure 5 is a side view showing an example configuration of a distance measuring module. Figure 6 is a flowchart showing an adjustment method according to one exemplary embodiment of a substrate processing system. Figure 7 is a flowchart showing an adjustment method according to another exemplary embodiment of a substrate processing system. Figure 8 is a diagram illustrating a substrate processing system according to another exemplary embodiment. Figure 9 is an end view of a stocker module according to one embodiment. Figure 10 is a top view showing an example of a distance measuring module in a stocker module. Figure 11 is a side view showing an example of a distance measuring module in a stocker module. Figure 12 is a flowchart showing a correction method for a distance measuring module according to one exemplary embodiment of a substrate processing system. Figure 13 is a diagram illustrating the configuration of a reference body according to one exemplary embodiment. Figure 14 is a diagram illustrating the configuration of a reference body according to another exemplary embodiment. Figure 15 is a diagram illustrating the configuration of a reference body according to yet another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 shows a substrate processing system according to one exemplary embodiment. As shown in Figure 1, the substrate processing system PS comprises at least one process module, a transport module VTM, a distance measuring module 5, and a control unit MC. The substrate processing system PS may also comprise a plurality of process modules PM1 to PM6 as at least one process module. In one embodiment, the substrate processing system PS may further comprise a reflective member RO, load ports LP1 to LP4, an aligner AN, load lock modules LL1 and LL2, and a ring stocker SR.

[0010] The substrate processing system PS may further include a loader module LM. The loader module LM is an example of an atmospheric transport module. The loader module LM includes an atmospheric chamber ACH. The pressure in the atmospheric chamber ACH of the loader module LM is set to atmospheric pressure. The loader module LM may have an FFU (Fan Filter Unit). The loader module LM is, for example, an EFEM (Equipment Front End Module). The loader module LM is positioned between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of edges along the longitudinal direction of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of edges along the longitudinal direction of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed on top of it. The cassette CST is a container that houses multiple circuit boards W inside. The cassette CST is, for example, a FOUP (Front-Opening Unified Pod).

[0011] The loader module LM includes a transport device TR3. The transport device TR3 may be a transport robot. The transport device TR3 is located inside the atmospheric chamber ACH of the loader module LM. The transport device TR3 may also include an arm AR31 and an end effector FK31. The end effector FK31 is attached to the tip of the arm AR31 and is configured to support the substrate W or ring member R placed on it. The transport device TR3 transports the substrate W or ring member R based on operation instructions output by the control unit MC, which will be described later. The transport device TR3 transports the substrate W or ring member R between any two of the cassette CST, load lock modules LL1 and LL2, aligner AN, and ring stocker SR.

[0012] In one example, the ring stocker SR is positioned along the edge of the loader module LM in the short direction. The ring stocker SR may also be positioned along the edge of the loader module LM in the longitudinal direction. The ring stocker SR may also be positioned inside the loader module LM. The ring stocker SR is configured to accommodate ring members within it.

[0013] In one embodiment, the aligner AN is located within the ring stocker SR. The aligner AN may be located along one of a pair of edges along the short direction of the loader module LM. The aligner AN may be located along the edge along the longitudinal direction of the loader module LM. The aligner AN may be located within the atmospheric chamber ACH of the loader module LM.

[0014] Each of the load lock modules LL1 and LL2 is positioned between the transport module VTM and the loader module LM. Each of the load lock modules LL1 and LL2 provides a pressure reducing chamber DCH1 and DCH2. Each of the load lock modules LL1 and LL2 is connected to the loader module LM via a gate valve G3. Each of the load lock modules LL1 and LL2 is connected to the transport module VTM via a gate valve G2.

[0015] The transport module VTM may include a vacuum transport chamber VCH. In the example shown in Figure 1, the transport module VTM is configured to transport the substrate W through a reduced-pressure space within the vacuum transport chamber VCH. The vacuum transport chamber VCH is connected to load lock modules LL1 and LL2, respectively, via gate valve G2. Process modules PM1 to PM6 are connected to the vacuum transport chamber VCH via gate valve G1.

[0016] The transport module VTM includes a transport device TR configured to transport a substrate W. The transport device TR may be a transport robot. In one example, the transport device TR is located inside a vacuum transport chamber VCH. The transport device TR has end effectors configured to support the substrate W. In the example shown in Figure 1, the transport device TR has arms AR11, AR12 and end effectors FK11, FK12. End effector FK11 is attached to the tip of arm AR11 and is configured to support the substrate W placed on it. End effector FK12 is attached to the tip of arm AR12 and is configured to support the substrate W placed on it. The transport device TR transports the substrate W based on operation instructions output by a control unit MC, which will be described later.

[0017] The transport device TR holds the substrate W with end effectors FK11 and FK12. The transport device TR transports the substrate W through any two of the paths between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and the vacuum transport chamber VCH of the transport module VTM.

[0018] In one embodiment, each of the process modules PM1 to PM6 is configured to perform a dedicated process on the substrate W. At least one of the process modules PM1 to PM6 is a substrate processing system, such as the plasma processing apparatus 1 described later.

[0019] The control unit MC is, for example, a computer. The control unit MC may consist of a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary storage devices. The CPU operates based on a program stored in the ROM or auxiliary storage device and controls each part of the board processing system PS.

[0020] The substrate processing system PS is not necessarily limited to the one shown in Figure 1. For example, the number of process modules and / or transport modules in the substrate processing system may differ from those shown in Figure 1. For example, the number of load ports may be five or more, and the number of load ports may be any number. The substrate processing system may also be a system in which multiple module groups, each including process modules and load lock modules, are connected to a loader module (a so-called loader type system). The substrate processing system may also be a system in which two or more process modules are arranged around a transport module and connected so as to surround the transport module (a so-called cluster type system).

[0021] Figure 2 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0022] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0023] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0024] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 3 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0025] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0026] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0027] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0028] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0029] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0030] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0031] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0032] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0033] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0034] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0035] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0036] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0037] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0038] As described above, at least one process module PM1 to PM6 may have a chamber 10 and a substrate support 11. The chamber 10 provides a processing space 10s inside it. The substrate support 11 is located inside the chamber 10. At least one process module PM1 to PM6 is configured to perform processing on a substrate W in the chamber 10. The transport module VTM has a transport device TR. The transport device TR includes end effectors FK11 and FK12. The end effectors FK11 and FK12 are configured to support a substrate W placed on them. The transport device TR is configured to transport the substrate W on the end effectors FK11 and FK12 into the chamber 10. The control unit MC and the control unit 2 may be integrated.

[0039] Hereinafter, with reference to Figures 4, 5, and 6, the configuration of a substrate processing system PS according to one exemplary embodiment and the adjustment method according to one exemplary embodiment of the substrate processing system will be described. Figure 4 is a top view showing an example of the configuration of a distance measuring module. Figure 5 is a side view showing an example of the configuration of a distance measuring module. The distance measuring module 5 includes a plurality of optical input / output units 52 and a processing circuit 54. In one example, the distance measuring module 5 may further include a light source 51 and a photoelectric converter 53. The light source 51, the photoelectric converter 53, and the processing circuit 54 may be arranged separately from the plurality of optical input / output units 52. In one example, the light source 51, the photoelectric converter 53, and the processing circuit 54 may be included in the distance measuring module body 50. The distance measuring module body 50 is arranged separately from the end effector FK11. For example, the plurality of optical input / output units 52 and the distance measuring module body 50 are connected by a plurality of optical fibers FB. The distance measuring module 5 is, for example, a displacement sensor that measures distance optically. In one example, the distance measuring module 5 may be a confocal displacement sensor. In one example, the distance measurement module 5 may be a laser displacement sensor.

[0040] The light source 51 may include multiple light sources 51 corresponding to multiple optical input / output units 52. The photoelectric converter 53 may include multiple photoelectric converters 53 corresponding to multiple optical input / output units 52. The processing circuit 54 may include multiple processing circuits 54 corresponding to multiple optical input / output units 52. The distance measurement module 5 may consist of multiple displacement sensors. Each of the multiple displacement sensors may include a light source 51, an optical input / output unit 52, a photoelectric converter 53, and a processing circuit 54.

[0041] Figure 4 shows the configuration of an end effector FK11 as an example, but the configuration of an end effector FK12 may also be used. The end effector FK11 has a horseshoe shape when viewed from the vertical direction. In one embodiment, the end effector FK11 includes a main body FKM and a pair of tip portions FKB. The pair of tip portions FKB protrude from the main body FKM. A gap is defined between the pair of tip portions FKB. The substrate W is supported on the end effector FK11 such that its central axis passes through the gap.

[0042] The light source 51 is configured to emit measurement light. The measurement light is light used to measure the distance between each of the multiple optical input / output units 52 and the object. In one example, the measurement light is white light. In the example shown in Figure 4, the measurement light travels to the multiple optical input / output units 52 via multiple optical fibers FB.

[0043] The plurality of optical input / output units 52 are attached to the end effector. In the example shown in FIG. 4, the plurality of optical input / output units 52 are attached to the end effector FK11. The plurality of optical input / output units 52 may be attached to the end effector FK12. The plurality of optical input / output units 52 may include the ends of the plurality of optical fibers FB. Each of the plurality of optical input / output units 52 may include a mirror and a cover. The mirror is configured to reflect the light output from the end of the optical fiber FB and the light input to the end of the optical fiber FB. The cover protects the end of the optical fiber FB and / or the mirror. The cover is configured to transmit the light output from the end of the optical fiber FB and the light input to the end of the optical fiber FB. The cover is exposed from the end effector. In the example shown in FIG. 4, the plurality of optical input / output units 52 include a pair of optical input / output units 52. The pair of optical input / output units 52 are respectively attached to the side surfaces of the pair of tip portions FKB. In one example, the pair of optical input / output units 52 are attached to the depressions respectively formed on the side surfaces of the pair of tip portions FKB.

[0044] Each of the plurality of optical input / output units 52 is configured to irradiate the object with measurement light. For example, each of the plurality of optical input / output units 52 is configured to irradiate the object located below the end effector FK11 with measurement light. In one example, each of the plurality of optical input / output units 52 irradiates the object with measurement light such that a plurality of lights having different wavelengths included in the measurement light are focused at different positions. Each of the plurality of optical input / output units 52 is configured to receive the reflected light from the object. In one example, among the plurality of lights having different wavelengths included in the measurement light, the light having the wavelength focused on the surface of the object is received by the plurality of optical input / output units 52 as the reflected light from the object. In the example shown in FIG. 4, the reflected light travels to the distance measurement module main body 50 via the plurality of optical fibers FB.

[0045] In one embodiment, the object includes at least one selected from the group consisting of a substrate W, an edge ring ER, a substrate support surface, and a ring support surface. The substrate W is placed on the substrate support portion 11. The substrate W may be a dummy substrate used as a jig for adjusting the substrate processing system PS. The edge ring is placed on the substrate support portion 11 so as to surround the substrate W. The substrate support surface may be the central region 111a described above. The ring support surface may be the annular region 111b described above.

[0046] The photoelectric converter 53 is configured to acquire reflected light received by each of the multiple optical input / output units 52. The photoelectric converter 53 is configured to output an electrical signal indicating the amount of light in the received reflected light. For example, a charge corresponding to the amount of light in the reflected light is accumulated in the photoelectric converter 53. The photoelectric converter 53 is configured to output the accumulated charge as an electrical signal. The electrical signal indicating the amount of light in the reflected light may include voltage and / or current. In one example, the photoelectric converter 53 may be a spectroscopic sensor. The spectroscopic sensor is configured to spectrally separate light into wavelengths and output an electrical signal indicating the amount of light in each wavelength. The spectroscopic sensor may include a filter and a light-receiving element. The photoelectric converter 53 is configured to output an electrical signal indicating the amount of light in each of the multiple lights with different wavelengths contained in the reflected light.

[0047] The processing circuit 54 is configured to obtain the distance between the object and each of the multiple optical input / output units 52 based on the reflected light received by each of the multiple optical input / output units 52. In one embodiment, the processing circuit 54 is configured to obtain the distance between the object and each of the multiple optical input / output units 52 from an electrical signal output from a photoelectric converter 53. For example, the processing circuit 54 is configured to obtain the distance between the object and each of the multiple optical input / output units 52 from the amount of light of each of the multiple lights with different wavelengths contained in the reflected light obtained from the electrical signal output from the photoelectric converter 53. For example, among the multiple lights with different wavelengths contained in the reflected light, the light of the wavelength that is focused on the surface of the object has the greatest amount of light, so the distance between the object and each of the multiple optical input / output units 52 is obtained from the focal length of the light of the focused wavelength.

[0048] The control unit MC is configured to execute a light quantity adjustment operation. The light quantity adjustment operation includes steps STa, STb, STc, and STd shown as an example in FIG. 6. FIG. 6 is a flowchart showing an adjustment method according to one exemplary embodiment of a substrate processing system. In step STa, the end effector FK11 is moved above the reference object. Subsequently, in step STb, measurement light is irradiated from each of the plurality of light input / output units 52 to the reference object, and each of the plurality of light input / output units 52 receives the reflected light from the reference object. Subsequently, in step STc, it is determined whether the light quantity of the reflected light obtained during the light reception period of the distance measurement module 5 in step STb is less than or equal to a threshold value. Finally, in step STd, when it is determined in step STc that the light quantity is less than or equal to the threshold value, at least one of the transfer module VTM and the distance measurement module 5 is adjusted to increase the light quantity.

[0049] In the plasma processing apparatus, the plurality of light input / output units 52 of the distance measurement module 5 may be contaminated by the atmosphere in the processing space 10s. When the plurality of light input / output units 52 are contaminated and the transmittance of the plurality of light input / output units 52 decreases, the light quantity of the reflected light in the distance measurement module 5 decreases. When the reference object is the edge ring ER, the light quantity of the reflected light in the distance measurement module 5 may decrease due to the wear of the edge ring ER. In the substrate processing system PS, when it is determined that the light quantity of the reflected light obtained during the light reception period is less than or equal to the threshold value, at least one of the transfer module VTM and the distance measurement module 5 is adjusted to increase the light quantity of the reflected light. Therefore, the substrate processing system PS suppresses a decrease in the accuracy of the distance measurement module 5 due to a decrease in the light quantity of the reflected light. As a result, the substrate processing system PS can suppress a decrease in the transfer accuracy of the substrate W.

[0050] In one embodiment, the reference object may be either the object or the reflective member RO. The reflective member RO is located outside the chamber 10. As shown in Figure 1, the reflective member RO may be located inside the vacuum transfer chamber VCH. The reflective member RO may be located inside the gate valve G1. Since the reflective member RO is located outside the chamber 10, it is less affected by plasma processing. As a result, the reflectivity of the reflective member RO is less likely to decrease.

[0051] In one embodiment, the control unit MC may be configured to obtain the center position of the substrate support surface. For example, the control unit MC is configured to control the processing circuit 54 of the distance measurement module 5 of the transport module VTM to obtain the respective distances between a plurality of measurement positions MP on the outer edge of the substrate support surface and a plurality of optical input / output units 52 in order to obtain the center position of the substrate support surface.

[0052] The height of the substrate support surface differs from the height of the periphery of the substrate support surface. For example, the substrate support surface is higher than the ring support surface. Therefore, multiple measurement positions MP on the outer edge of the substrate support surface are identified by the variation in the distance between the object and the multiple optical input / output units 52 when the end effector FK11 is moved parallel to the substrate support surface. For example, multiple measurement positions MP are identified in the coordinate system in which the end effector FK11 moves. The control unit MC may geometrically calculate the center position of the substrate support surface in the coordinate system in which the end effector FK11 moves. In one example, since the substrate support surface has a circular shape, the control unit MC may obtain the center position of the substrate support surface using three or more measurement positions MP. Multiple measurement positions MP may include four measurement positions MP. Multiple measurement positions MP may also be multiple measurement positions on the inner edge of the edge ring ER. In the example shown in Figures 4 and 5, the end effector FK11 is moved along one direction within the chamber 10 to identify multiple measurement positions MP (four measurement positions MP) on the inner edge of the edge ring ER located below the end effector FK11. In one example, the control unit MC may obtain the center position of the substrate support surface using the previously acquired diameter of the substrate support surface and two or more measurement positions MP.

[0053] In one embodiment, the control unit MC may be configured to perform a light intensity adjustment operation at regular intervals and / or each time the distance between the object and each of the multiple optical input / output units 52 is acquired. The regular interval may be the operating time of the substrate processing system PS. In one example, the control unit MC may perform a light intensity determination every 100 hours. The regular interval may be the period until the substrate W is transported to the processing space 10s a predetermined number of times. In one example, the control unit MC may perform a light intensity adjustment operation each time the distance between each of the multiple measurement positions MP on the outer edge of the substrate support surface and the multiple optical input / output units 52 is acquired in order to obtain the center position of the substrate support surface.

[0054] In one embodiment, the control unit MC may be configured to perform a determination of the amount of reflected light obtained from at least one of the multiple optical input / output units 52 in the light intensity adjustment operation step STc. For example, if the control unit MC determines that the amount of reflected light obtained from at least one of the multiple optical input / output units 52 is below or less than a threshold, it is configured to adjust at least one of the transport module VTM and the distance measurement module 5 to increase the amount of reflected light.

[0055] Hereinafter, with reference to Figure 6, an adjustment method according to one exemplary embodiment of the substrate processing system will be described. The adjustment method shown in Figure 6 (hereinafter referred to as "Method MT") is performed in the substrate processing system PS described above as an example. As described above, the substrate processing system PS includes a distance measurement module 5. The distance measurement module 5 includes a processing circuit 54 configured to acquire the distance between each of the plurality of optical input / output units 52 and the object.

[0056] Method MT begins in step STa. In step STa, the end effector FK11 is moved above the reference object. As described above, the transport device TR is configured to transport the substrate W on the end effector into the chamber 10. Subsequently, in step STb, measurement light is irradiated onto the reference object from each of the multiple optical input / output units 52, and each of the multiple optical input / output units 52 receives reflected light from the reference object. Subsequently, in step STc, it is determined whether the amount of reflected light obtained during the light reception period of the distance measurement module 5 in step STb is below or less than a threshold. Step STc is executed by the control unit MC.

[0057] If it is determined in process STc that the light intensity is not below or equal to the threshold (process STc: NO), then method MT terminates. If it is determined in process STc that the light intensity is below or equal to the threshold (process STc: YES), then process STd is executed next. In process STd, at least one of the transport module VTM, which includes the transport device TR, and the distance measuring module 5 is adjusted to increase the light intensity. Process STd is executed by the control unit MC. Method MT terminates in process STd.

[0058] In one embodiment, the control unit MC may be configured to adjust the distance measuring module 5 to lengthen the light reception period if it determines that the amount of light is below or less than a threshold. For example, the control unit MC may be configured to adjust the photoelectric converter 53 to lengthen the light reception period for accumulating charge. In one example, the control unit MC is configured to adjust the shutter speed of the electronic shutter of the photoelectric converter 53 to decrease. If the distance measuring module 5 includes a physical shutter, the control unit MC may be configured to adjust the shutter speed of the physical shutter to decrease the light reception period for accumulating charge. In step STd, the distance measuring module 5 may be adjusted to lengthen the light reception period.

[0059] In one embodiment, the distance measuring module 5 may be configured to measure the amount of light at a sampling period. The control unit MC may be configured to adjust the distance measuring module 5 to lengthen the sampling period before lengthening the light reception period if it determines that the amount of light is below or less than a threshold. In step STd, the distance measuring module 5 may be adjusted to lengthen the sampling period before controlling the distance measuring module 5 to lengthen the light reception period. The upper limit of the light reception period is limited by the sampling period. Therefore, the light reception period can be lengthened even further by lengthening the sampling period.

[0060] In one embodiment, the control unit MC may be configured to adjust the transport module VTM to slow down the movement speed of the end effector FK11 when adjusting the distance measuring module 5 to lengthen the sampling period. For example, the control unit MC is configured to adjust the transport device TR to slow down the movement speed of the end effector FK11. In process STd, when adjusting the distance measuring module 5 to lengthen the sampling period, the transport module VTM may be adjusted to slow down the movement speed of the end effector FK11. When the distance measuring module 5 is adjusted to lengthen the sampling period, the number of times the distance measuring module 5 measures distance per unit time decreases, so the number of times the distance measuring module 5 measures distance per unit movement distance of the end effector FK11 decreases. Therefore, the resolution for acquiring the position of the end effector FK11 by the distance measuring module 5 may decrease.

[0061] When the transport module VTM is adjusted to slow down the movement speed of the end effector FK11, the number of times the distance measurement module 5 measures the distance per unit movement distance of the end effector FK11 increases. As a result, the decrease in the resolution used by the distance measurement module 5 to acquire the position of the end effector FK11 is suppressed. In one example, the control unit MC may be configured to adjust the transport module VTM to slow down the movement speed of the end effector FK11 when the end effector FK11 moves near a reference object. This can suppress an increase in the movement time of the end effector FK11.

[0062] In one embodiment, the control unit MC may be configured to adjust the transport module VTM to reduce the distance between the multiple optical input / output units 52 and the reference object when it determines that the light intensity is below or less than a threshold. For example, the control unit MC is configured to adjust the transport module VTM to reduce the distance between the multiple optical input / output units 52 and the reference object in order to increase the light intensity. In step STd, the transport module VTM may be adjusted to reduce the distance between the multiple optical input / output units 52 and the reference object. The control unit MC may adjust the transport device TR to reduce the distance between the multiple optical input / output units 52 and the reference object. In step STd, the distance between the multiple optical input / output units 52 and the reference object is reduced in order to increase the light intensity. The control unit MC may adjust the base of the transport device TR to reduce the distance between the multiple optical input / output units 52 and the reference object. In one example, as described above, if each of the multiple optical input / output units 52 is configured to irradiate measurement light toward a reference object located below the end effector FK11, the control unit MC adjusts the transport device TR to move the end effector FK11 downwards.

[0063] The configuration of a substrate processing system PS according to one exemplary embodiment and a method for adjusting a substrate processing system according to another exemplary embodiment will be described below with reference to Figure 7. Figure 7 is a flowchart showing a method for adjusting a substrate processing system according to another exemplary embodiment. The adjustment method shown in Figure 7 (hereinafter referred to as "Method MTA") is performed in the above-described substrate processing system PS in one example. In the following, Method MTA will be described in terms of its differences from Method MT shown in Figure 6, and redundant explanations will be omitted as appropriate.

[0064] Method MTA, like Method MT, includes steps STa, STb, STc, and STd. Steps STa, STb, and STc of Method MTA are identical to those of Method MT, so their explanation is omitted. In step STd, the distance measurement module 5 is adjusted to lengthen the light reception period.

[0065] In step STd, the distance measurement module 5 is adjusted to lengthen the light reception period. Subsequently, in step STe, it is determined whether the light intensity is below or less than a threshold. If it is determined in step STe that the light intensity is not below or less than a threshold (step STe: NO), method MTA is terminated. If it is determined in step STe that the light intensity is below or less than a threshold (step STe: YES), then step STf is executed. In step STf, the transport module VTM is controlled to reduce the distance between the multiple optical input / output units 52 and the object. In step STf, the transport module VTM is controlled to reduce the distance between the multiple optical input / output units 52 and the object in order to increase the light intensity.

[0066] In one embodiment, the control unit MC may be configured to adjust the transport module VTM to reduce the distance between the multiple optical input / output units 52 and the object if it determines that the light intensity is below or less than a threshold after adjusting the distance measurement module 5 to extend the light reception period. The control unit MC adjusts the transport module VTM to reduce the distance between the multiple optical input / output units 52 and the object in order to increase the light intensity.

[0067] In step STf, the transport module VTM is adjusted to reduce the distance between the multiple optical input / output units 52 and the object. Subsequently, in step STg, it is determined whether the light intensity is below or less than a threshold. If it is determined in step STg that the light intensity is not below or less than a threshold (step STg: NO), method MTA terminates. If it is determined in step STg that the light intensity is below or less than a threshold (step STg: YES), then step STh is executed. In step STh, a warning is generated. For example, the warning notifies the operator that the light intensity is below or less than a threshold even after adjusting the substrate processing system PS. Method MTA terminates in step STh.

[0068] In one embodiment, the control unit MC may be configured to generate a warning if, after controlling the transport module VTM to reduce the distance between the multiple optical input / output units 52 and the object, it determines that the amount of light is below or less than a threshold.

[0069] Hereinafter, with reference to Figures 8 to 11, a substrate processing system PSA according to another exemplary embodiment will be described in terms of its differences from the substrate processing system PS described above. Figure 8 is a diagram showing a substrate processing system according to another exemplary embodiment. The substrate processing system PSA includes the vacuum transfer chamber VCH described above. The substrate processing system PSA further includes a stocker module RSM. The stocker module RSM is connected to the vacuum transfer chamber VCH.

[0070] Figure 9 is an end view of a stocker module according to one embodiment. The stocker module RSM is configured to accommodate ring members R. The ring members R are edge rings ER or covering rings CR. In the example shown in Figure 9, the stocker module RSM is configured to accommodate a plurality of ring members R. For example, the stocker module RSM accommodates a plurality of edge rings ER and a plurality of covering rings CR as the plurality of ring members R.

[0071] The stocker module RSM includes a chamber RC. The chamber RC is configured to allow for depressurization of its internal space. In one embodiment, an aligner RAN and a cassette module CTM are arranged inside the chamber RC. The aligner RAN is positioned above the cassette module CTM. The cassette module CTM includes a plurality of cassette CTs. Each of the plurality of cassette CTs is configured to house a ring member R within it.

[0072] The cassette module CTM houses multiple ring members R. As shown in Figure 9, edge rings ER and covering rings CR are arranged alternately in the cassette module CTM. The aligner RAN and the cassette module CTM may be configured to move vertically. For example, ring members R are discharged from a cassette CT positioned at a transport position within the chamber RC. The cassette module CTM can move vertically so that the discharged ring members R are positioned at a transport position within the chamber RC. In the cassette module CTM, the ring members R may be discharged sequentially, starting from the lowest ring member R.

[0073] In one embodiment, the aligner RAN includes a stage ST and an optical sensor S1. The stage ST is configured such that a ring member R is placed on it. The optical sensor S1 is configured to detect the shape of the ring member R placed on the stage ST.

[0074] In one embodiment, the stage ST is configured to be rotatable together with a ring member R placed on it. For example, the stage ST may include a support RST that is rotatable and configured to support the ring member R. The support RST is formed from a material that is transparent to visible light. In one example, the support RST is formed from glass. The support RST may include a plurality of pads PD. The plurality of pads may include pads for the edge ring ER and pads for the covering ring CR. The pads for the edge ring ER are positioned inside the pads for the covering ring CR. The aligner RAN can move vertically so that the support RST of the stage ST is positioned in the transport position within the chamber RC.

[0075] In one embodiment, the optical sensor S1 includes a line sensor LS and a light source L. The line sensor LS is positioned to detect the outer and inner edges of the ring member R. The light source L emits light toward the line sensor LS. In one example, the light source L may emit laser light. For example, the line sensor LS and the light source L are positioned facing each other in the vertical direction such that the stage ST is located between them. The line sensor LS may be positioned below the support RST such that, as seen from the light source L, it intersects with the inner edge and outer edge of the ring member R. In one example, when the stage ST and the ring member R placed on the stage are rotating together, the light source L emits light toward the line sensor LS. The line sensor LS detects the light projected by the inner edge and outer edge of the ring member R. The optical sensor S1 detects the shape of the ring member R from the light detected by the line sensor LS.

[0076] In one embodiment, the aligner RAN may be configured to adjust (align) the position of the ring member R placed on the stage ST. The optical sensor S1 may be configured to optically detect the position of the ring member on the support portion RST. The aligner RAN may be configured to adjust the position of the ring member R according to the position detected by the optical sensor S1. In one embodiment, the aligner RAN is configured to enable detection of the edge ring ER and the covering ring CR, and alignment of each thereof. In one example, the aligner RAN may be configured to perform alignment of the edge ring ER in the inner portion of the line sensor LS and alignment of the covering ring CR in the outer portion of the line sensor.

[0077] In one embodiment, the stocker module RSM may further include an optical sensor S2. The optical sensor S2 is configured to detect the thickness of the ring member R. In one example, the optical sensor S2 is a mapping sensor. The optical sensor S2 may include a light source that emits laser light in the horizontal direction, and an optical sensor that receives the laser light emitted from the light source. The cassette CT may include a side surface in which a notch is formed. The notch is positioned so that laser light is shone onto the ring member R housed within the cassette CT.

[0078] The conveying device TR is configured to convey the ring member R between the stocker module RSM and the vacuum conveying chamber VCH. For example, the conveying device TR is configured to convey the ring member R from the stocker module RSM to the chamber 10 via the vacuum conveying chamber VCH.

[0079] The object may include a ring member R housed in the stocker module RSM. In one embodiment, the control unit MC is configured to move the end effector FK11 in the stocker module RSM and acquire shape information of the ring member R from the distance acquired by the distance measuring module 5. The shape information of the ring member R includes the diameter of the ring member R and / or the thickness of the ring member. The diameter of the ring member R includes the outer diameter and / or inner diameter of the ring member R. The diameter of the ring member R may include the diameter, radius, or chord. According to the substrate processing system PSA, since the shape information of the ring member R housed in the stocker module RSM is acquired, the ring member R can be determined from the shape information.

[0080] Figure 10 is a top view showing an example of a distance measuring module in a stocker module. Figure 11 is a side view showing an example of a distance measuring module in a stocker module. In Figure 11, an edge ring ER is shown as an example of a ring member R. For example, the control unit MC acquires distance from the distance measuring module 5 while moving the end effector FK11 in the stocker module RSM. As shown in the example in Figure 11, when the end effector FK11 is moved parallel to the top surface of the edge ring ER, the distance between the object and the multiple optical input / output units 52 changes. In one embodiment, the control unit MC is configured to acquire the diameter of the ring member R as shape information of the ring member R. In the example shown in Figure 10, the control unit MC is configured to acquire position information of multiple second measurement positions MP2 from the change in distance acquired by the distance measuring module 5, and to acquire the diameter of the ring member R from the position information of the multiple second measurement positions MP2. The shape information of the ring member R may include position information of multiple second measurement positions MP2.

[0081] Multiple second measurement positions MP2 are located on the edges of the ring member R. Multiple second measurement positions MP2 may be located on the outer edge of the ring member R or on the inner edge of the ring member R. Each of the multiple second measurement positions MP2 is a position where the distance acquired by the distance measurement module 5 changes. At each of the multiple second measurement positions MP2, the distance acquired by the distance measurement module 5 changes from the distance between the multiple optical input / output units 52 and the cassette CT supporting the ring member R to the distance between the multiple optical input / output units 52 and the ring member R. For example, the control unit MC may acquire the coordinates where the distance acquired by the distance measurement module 5 has changed in the coordinate system in which the end effector FK11 moves, as position information for each of the multiple second measurement positions MP2.

[0082] In one embodiment, the control unit MC is configured to obtain the thickness of the ring member R as shape information of the ring member R. For example, in order to obtain the thickness of the ring member R, the control unit MC is configured to obtain the distance between the support member supporting the ring member R and the plurality of optical input / output units 52, and the distance between the ring member R and the plurality of optical input / output units 52. The thickness d1 of the ring member R is obtained by comparing the distance between the support member supporting the ring member R and the plurality of optical input / output units 52 with the distance between the ring member R and the plurality of optical input / output units 52. In the example shown in Figure 11, the support member supporting the edge ring ER is the cassette CT of the stocker module RSM.

[0083] In one embodiment, the control unit MC may store shape information of the ring member R housed in the stocker module RSM. In one embodiment, the control unit MC may compare the shape information of the ring member R stored in advance with the shape information of the ring member R acquired to determine whether or not it falls within an acceptable range. For example, if it is determined that the difference between the diameter and / or thickness of the ring member R stored in advance and the diameter and / or thickness of the ring member R acquired falls within an acceptable range, the control unit MC may transport the ring member R. If it is determined that the difference between the diameter and / or thickness of the ring member R stored in advance and the diameter and / or thickness of the acquired ring member R does not fall within an acceptable range, the control unit MC may generate a warning. According to the substrate processing system PSA, it is determined whether or not the ring member R corresponding to the substrate processing to be performed is transported.

[0084] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0085] In one embodiment, the control unit MC may acquire the inclination of the upper surface of the ring member R. The inclination of the upper surface of the ring member R includes wear on the upper surface of the ring member R and / or the inclination of the ring member R. For example, the control unit MC may be configured to perform a first step of moving the end effector FK11 in the space above the ring member R, a second step of acquiring the distance between each of the plurality of optical input / output units 52 and each of the plurality of regions on the ring member R, and a third step of acquiring the position of the end effector FK11 in the coordinate system when each of the distances was acquired, and a regression plane indicating the upper surface of the ring member R from each of the distances. The control unit MC may control the height of each of the plurality of pins supporting the ring member R in order to bring the upper surface of the ring member R closer to horizontal.

[0086] In one embodiment, the ring member R may be supported by a plurality of pins via a conductive ring. In one example, the control unit MC may obtain the inclination of the conductive ring. For example, the control unit MC may indirectly obtain the inclination of the conductive ring by performing the first, second, and third steps described above after the step of placing an unused ring member R that has not been exposed to plasma on the conductive ring. Since the upper and lower surfaces of the unused ring member that has not been exposed to plasma are substantially parallel, the inclination of the upper surface of the ring member R corresponds to the inclination of the conductive ring. The control unit MC may control the height of each of the plurality of pins supporting the conductive ring in order to bring the inclination of the conductive ring closer to horizontal. The control unit MC may obtain the inclination of the ring member R after obtaining the inclination of the conductive ring.

[0087] In one embodiment, the substrate processing system PS may further include a distance sensor. The distance sensor includes, for example, at least one selected from the group consisting of an electromagnetic induction proximity sensor configured to measure distance by electromagnetic induction, a capacitive proximity sensor configured to measure distance by capacitance, and an ultrasonic distance sensor configured to measure distance by ultrasound. In one example, the distance sensor is attached to the end effector FK11. The distance sensor may also be attached to the main body FKM and / or a pair of tip portions FKB. For example, the distance sensor is positioned on one of the top surface, bottom surface, left surface in the direction of travel, and right surface in the direction of travel on the end effector FK11. In another example, the distance sensor may be attached to gate valves G1, G2. The control unit MC may be configured to issue an alarm when the distance obtained from the distance sensor reaches a threshold. The substrate processing system PS with the distance sensor can prevent collisions of the end effector FK11.

[0088] Figure 12 is a flowchart showing a correction method for a distance measurement module according to one exemplary embodiment of a substrate processing system. Figure 13 is a diagram showing the configuration of a reference body according to one exemplary embodiment. Hereinafter, the correction method for the distance measurement module 5 (hereinafter referred to as Method MTB) and the configuration of the substrate processing system PS will be described with reference to Figures 12 and 13. In one example, Method MTB is performed in the substrate processing system PS described above.

[0089] The distance to an object measured by the distance measurement module 5 includes an error due to temperature. Method MTB is a method for obtaining a correction coefficient to correct the error by measuring the distance to a reference body of a predetermined shape. Method MTB may be performed by the control unit MC or by an operator.

[0090] In method MTB, step ST1 is performed first. In step ST1, a reference body is brought into the plasma processing chamber 10. The first reference body 61 shown in Figure 13 is bonded to a substrate W. The substrate W is a dummy substrate. For example, a pair of first reference bodies 61 may be bonded to the substrate W so that they face each other. The first reference body 61 is brought into the plasma processing chamber 10 together with the substrate W by the transport module VTM and placed on the central region 111a. The first reference body 61 and the substrate W may be chucked by an electrostatic chuck 1111.

[0091] Next, step ST2 is performed. The first reference body 61 has a first upper surface 61a, a second upper surface 61b, and a third upper surface 61c arranged in a stepped manner. The first upper surface 61a is the highest upper surface, the second upper surface 61b is the second highest upper surface, and the third upper surface 61c is the third highest surface. In step ST2, the distance between each of the plurality of optical input / output units 52 and the first reference body 61 is measured. For example, the control unit MC may be configured to measure the distance between two upper surfaces selected from the group consisting of the first upper surface 61a, the second upper surface 61b, the third upper surface 61c, and the upper surface of the substrate W.

[0092] Next, process ST3 is executed. In process ST3, a correction coefficient is obtained based on the distance measured in process ST2 and the shape of the first reference body 61 which is predetermined. For example, the control unit MC is configured to obtain a correction coefficient to bring the distance between two upper surfaces selected from the group consisting of the first upper surface 61a, the second upper surface 61b, the third upper surface 61c, and the upper surface of the substrate W, which were measured in process ST2, closer to a predetermined distance between the two upper surfaces. In one example, the correction coefficient is the value obtained by dividing the predetermined distance between the two upper surfaces by the distance measured in process ST2.

[0093] Finally, process ST4 is executed. In process ST4, the reference body is discharged from the plasma processing chamber 10. For example, the first reference body 61 is discharged from the plasma processing chamber 10 to the outside together with the substrate W by the transport module VTM.

[0094] Figure 14 shows the configuration of a reference body according to another exemplary embodiment. Hereinafter, with reference to Figure 14, the second reference body 62 according to another exemplary embodiment will be described in terms of its differences from the first reference body 61, and redundant explanations will be omitted as appropriate.

[0095] The second reference body 62 has an annular shape. The second reference body 62 has only an upper surface 62a. The upper surface 62a extends along the annular shape. For example, the control unit MC is configured to measure multiple distances between the upper surface 62a of the second reference body 62 and the upper surface of the substrate W at multiple positions in the annular shape. For example, the control unit MC is configured to obtain at least one correction coefficient to bring the multiple distances between the upper surface 62a of the second reference body 62 and the upper surface of the substrate W at multiple positions in the annular shape closer to a predetermined set of distances. With the second reference body 62, at least one correction coefficient is obtained based on at least multiple coefficients corresponding to multiple positions in the annular shape, so that more accurate distances are measured.

[0096] Figure 15 shows the configuration of a reference body according to yet another exemplary embodiment. Hereinafter, with reference to Figure 15, a third reference body 63 according to yet another exemplary embodiment will be described in terms of its differences from the first reference body 61, with redundant explanations omitted as appropriate.

[0097] The third reference body 63 is not adhered to the substrate W. The third reference body 63 is placed directly on the central region 111a. The third reference body 63 has a disc shape with a recess formed therein. The third reference body 63 has a first upper surface 63a and a second upper surface 63b. In the example shown in Figure 15, the first upper surface 63a is higher than the second upper surface 63b. The first upper surface 63a extends along the outer edge of the third reference body 63. The first upper surface 63a has an annular shape. The second upper surface 63b is surrounded by the first upper surface 63a. The second upper surface 63b has a circular shape. For example, the upper surface 62a of the second reference body 62 corresponds to the first upper surface 63a of the third reference body 63, and the upper surface of the substrate W corresponds to the second upper surface 63b of the third reference body 63. The third reference body 63 may include a plurality of upper surfaces that are formed in a stepped shape and exhibit an annular shape.

[0098] For example, the control unit MC is configured to measure multiple distances between the first upper surface 63a and the second upper surface 63b at multiple positions in the ring shape. For example, the control unit MC is configured to obtain at least one correction coefficient to bring the multiple distances between the first upper surface 63a and the second upper surface 63b at multiple positions in the ring shape closer to a predetermined set of distances. The third reference body 63 does not include any portion bonded to the substrate W, and therefore is unlikely to change from its predetermined shape.

[0099] In one embodiment, the distance measuring module 5 may have a temperature sensor. The temperature sensor is attached to the end effector FK11. For example, the temperature sensor is configured to measure the temperature of each optical input / output unit 52. The control unit MC may be configured to correct the measured distance between each of the plurality of optical input / output units 52 and the object based on the temperature of each optical input / output unit 52 at the time the distance was measured. The relationship between the measured distance and the temperature is acquired in advance. For example, the control unit MC is configured to acquire a temperature correction coefficient to bring the measured distance between each of the plurality of optical input / output units 52 and the object closer to the actual distance. The actual distance is predetermined by, for example, the reference body described above. In one example, the temperature correction coefficient is the value obtained by dividing the predetermined distance by the measured distance between each of the plurality of optical input / output units 52 and the object at a predetermined temperature. With the distance measuring module 5 having a temperature sensor, the measured distance between each of the plurality of optical input / output units 52 and the object is corrected based on the temperature of each optical input / output unit 52 at the time the distance was measured. Therefore, if the temperature correction coefficient is obtained first, the steps of bringing in and removing the reference object may be omitted.

[0100] The control unit MC may be configured to obtain multiple temperature correction coefficients corresponding to multiple temperatures. For example, the control unit MC may obtain a table arranged in one direction such that multiple temperatures correspond to multiple correction coefficients. The control unit MC may be configured to obtain multiple temperature correction coefficients corresponding to multiple distances. For example, the control unit MC may obtain a table arranged in one direction such that multiple distances correspond to multiple correction coefficients. In one example, the control unit MC may obtain a table containing multiple correction coefficients arranged in two directions such that multiple temperatures correspond to multiple distances.

[0101] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E20] below.

[0102] [E1] A distance measuring module comprising: a process module having a chamber and configured to perform processing on a substrate in the chamber; a transport module having a transport device including an end effector, configured to transport the substrate on the end effector into the chamber; a plurality of optical input / output units attached to the end effector, each configured to irradiate a measurement light onto an object located below the end effector and to receive reflected light from the object; and a processing circuit configured to obtain the distance between the object and each of the plurality of optical input / output units based on the reflected light received by each of the plurality of optical input / output units; and a control unit configured to perform a light intensity adjustment operation, the light intensity adjustment operation comprising: (a) moving the end effector above a reference object; and (b) irradiating the reference object with the measurement light from each of the plurality of optical input / output units, so that each of the plurality of optical input / output units receives reflected light from the reference object. A substrate processing system comprising: (c) a step of determining whether the amount of reflected light obtained during the light-receiving period of the distance measuring module in (b) is below or less than a threshold; and (d) if it is determined in (c) that the amount of light is below or less than a threshold, a step of adjusting at least one of the transport module and the distance measuring module to increase the amount of light. [E2] The substrate processing system according to E1, wherein the control unit is configured to adjust the distance measuring module to lengthen the light-receiving period if it is determined that the amount of light is below or less than the threshold. [E3] The substrate processing system according to E2, wherein the distance measuring module is configured to measure the amount of light at a sampling period, and the control unit is configured to adjust the distance measuring module to lengthen the sampling period before lengthening the light-receiving period if it is determined that the amount of light is below or less than the threshold.[E4] The substrate processing system according to E3, wherein the control unit is configured to adjust the transport module to slow down the movement speed of the end effector when adjusting the distance measuring module to lengthen the sampling period. [E5] The substrate processing system according to any one of E1 to E4, wherein the control unit is configured to adjust the transport module to reduce the distance between the plurality of optical input / output units and the reference object when it determines that the amount of light is below or less than the threshold. [E6] The substrate processing system according to E2, wherein the control unit is configured to adjust the transport module to reduce the distance between the plurality of optical input / output units and the reference object when it determines that the amount of light is below or less than the threshold after adjusting the distance measuring module to lengthen the light reception period. [E7] The substrate processing system according to E6, wherein the control unit is configured to generate a warning when it determines that the amount of light is below or less than the threshold after adjusting the transport module to reduce the distance between the plurality of optical input / output units and the reference object. [E8] The substrate processing system according to any one of E1 to 7, wherein the process module further comprises a substrate support portion disposed within the chamber, and the object includes at least one selected from the group consisting of the substrate placed on the substrate support portion, an edge ring placed on the substrate support portion so as to surround the substrate, a substrate support surface on which the substrate is placed, and a ring support surface on which the edge ring is placed. [E9] The substrate processing system according to any one of E1 to 8, wherein the reference object is either the object or a reflective member disposed outside the chamber. [E10] The substrate processing system according to any one of E1 to 9, wherein the process module further comprises a substrate support portion disposed within the chamber, and the control unit is configured to control the processing circuit of the transport module to acquire the respective distances between a plurality of measurement positions on the outer edge of the substrate support surface on which the substrate is placed and the plurality of optical input / output units.[E11] The substrate processing system according to any one of E1 to 10, wherein the control unit is configured to perform the light intensity adjustment operation at regular intervals and / or each time the distance between the object and each of the plurality of optical input / output units is obtained. [E12] The substrate processing system according to any one of E1 to 11, wherein in (c) of the light intensity adjustment operation, the control unit is configured to perform a determination of the light intensity of the reflected light obtained from at least one of the plurality of optical input / output units. [E13] A method for adjusting a substrate processing system comprising a distance measuring module including a processing circuit configured to acquire the distance between each of a plurality of optical input / output units and an object, the method comprising: (a) moving the plurality of optical input / output units attached to the end effector of a transport device configured to transport a substrate into a chamber above a reference object; (b) irradiating the reference object with measurement light from each of the plurality of optical input / output units so that each of the plurality of optical input / output units receives reflected light from the reference object; (c) determining whether the amount of reflected light obtained in (b) during the light receiving period of the distance measuring module is below or less than a threshold; and (d) if it is determined in (c) that the amount of light is below or less than the threshold, adjusting at least one of the transport module including the transport device and the distance measuring module to increase the amount of light. [E14] The method for adjusting a substrate processing system according to E13, wherein in (d), the distance measuring module is adjusted to lengthen the light receiving period. [E15] The method for adjusting the substrate processing system according to E14, wherein, in (d), the distance measuring module is adjusted to lengthen the sampling period for measuring the amount of light before adjusting the distance measuring module to lengthen the light receiving period. [E16] The method for adjusting the substrate processing system according to E15, wherein, in (d), when the distance measuring module is adjusted to lengthen the sampling period, the transport module is adjusted to slow down the movement speed of the end effector.[E17] The method for adjusting a substrate processing system according to E13, wherein in (d), the transport module is adjusted to reduce the distance between the plurality of optical input / output units and the reference object. [E18] The method for adjusting a substrate processing system according to E14, further comprising: (e) In (d), after adjusting the distance measuring module to lengthen the light reception period, determining whether the amount of light is less than or equal to the threshold; and (f) If in (e) it is determined that the amount of light is less than or equal to the threshold, adjusting the transport module to reduce the distance between the plurality of optical input / output units and the reference object. [E19] The method for adjusting a substrate processing system according to E18, further comprising: (g) After (f), determining whether the amount of light is less than or equal to the threshold; and (h) If in (g) it is determined that the amount of light is less than or equal to the threshold, generating a warning. [E20] A substrate processing system according to any one of E1 to E12, further comprising: a vacuum transfer chamber connected to the chamber and configured to house the transfer device; a stocker module connected to the vacuum transfer chamber and configured to house a ring member, wherein the transfer device is configured to transport the ring member between the stocker module and the vacuum transfer chamber; the object includes the ring member; and the control unit is configured to move the end effector in the stocker module to obtain shape information of the ring member from the distance obtained by the distance measuring module.

[0103] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims.

[0104] MC...control unit, 5...distance measurement module, 10...chamber, 10s...processing space, 11...substrate support unit, 51...light source, 52...optical input / output unit, 53...photoelectric converter, 54...processing circuit, ER...edge ring, FK11, FK12...end effector, MP...measurement position, PM1 to PM6...process module, PS...substrate processing system, RO...reflective member, TR...transport device, VTM...transport module, W...substrate.

Claims

1. A distance measuring module comprising: a process module having a chamber and configured to perform processing on a substrate in the chamber; a transport module having a transport device including an end effector, configured to transport the substrate on the end effector into the chamber; a plurality of optical input / output units attached to the end effector, each configured to irradiate a target object located below the end effector with measurement light and each configured to receive reflected light from the target object; and a processing circuit configured to obtain the distance between the target object and each of the plurality of optical input / output units based on the reflected light received by each of the plurality of optical input / output units; and a control unit configured to perform a light intensity adjustment operation, the light intensity adjustment operation comprising: (a) moving the end effector above a reference object; and (b) irradiating the reference object with measurement light from each of the plurality of optical input / output units, so that each of the plurality of optical input / output units receives reflected light from the reference object. A substrate processing system comprising: (c) a step of determining whether the amount of reflected light obtained during the light-receiving period of the distance measuring module in (b) is below or less than a threshold; and (d) if it is determined in (c) that the amount of light is below or less than a threshold, a step of adjusting at least one of the transport module and the distance measuring module to increase the amount of light.

2. The substrate processing system according to claim 1, wherein the control unit is configured to adjust the distance measuring module to lengthen the light reception period when it determines that the amount of light is less than or equal to the threshold.

3. The substrate processing system according to claim 2, wherein the distance measuring module is configured to measure the amount of light at a sampling period, and the control unit is configured to adjust the distance measuring module to lengthen the sampling period before lengthening the light reception period if it determines that the amount of light is below or less than the threshold.

4. The substrate processing system according to claim 3, wherein the control unit is configured to adjust the transport module to slow down the movement speed of the end effector when adjusting the distance measuring module to lengthen the sampling period.

5. The substrate processing system according to claim 1, wherein the control unit is configured to adjust the transport module to reduce the distance between the plurality of optical input / output units and the reference object when it determines that the amount of light is below or less than the threshold.

6. The substrate processing system according to claim 2, wherein the control unit is configured to adjust the transport module to reduce the distance between the plurality of optical input / output units and the reference object if, after adjusting the distance measuring module to lengthen the light reception period, it determines that the amount of light is below or less than the threshold.

7. The substrate processing system according to claim 6, wherein the control unit is configured to generate a warning if, after adjusting the transport module to reduce the distance between the plurality of optical input / output units and the reference object, it determines that the amount of light is below or less than the threshold.

8. The substrate processing system according to any one of claims 1 to 7, wherein the process module further comprises a substrate support portion disposed within the chamber, and the object includes at least one selected from the group consisting of the substrate placed on the substrate support portion, an edge ring placed on the substrate support portion so as to surround the substrate, a substrate support surface on which the substrate is placed, and a ring support surface on which the edge ring is placed.

9. The substrate processing system according to claim 8, wherein the reference object is either the object or a reflective member disposed outside the chamber.

10. The substrate processing system according to any one of claims 1 to 7, wherein the process module further comprises a substrate support portion disposed within the chamber, and the control unit is configured to control the processing circuit of the transport module to acquire the respective distances between a plurality of measurement positions on the outer edge of the substrate support surface on which the substrate is placed and the plurality of optical input / output portions.

11. The substrate processing system according to any one of claims 1 to 7, wherein the control unit is configured to perform the light intensity adjustment operation at regular intervals and / or each time the distance between the object and each of the plurality of optical input / output units is obtained.

12. The substrate processing system according to any one of claims 1 to 7, wherein the control unit is configured to perform a determination of the amount of light of the reflected light obtained from at least one of the plurality of optical input / output units in the light intensity adjustment operation (c).

13. A method for adjusting a substrate processing system comprising a distance measuring module including a processing circuit configured to acquire the distance between each of a plurality of optical input / output units and an object, the method comprising: (a) moving the plurality of optical input / output units, which are attached to the end effector of a transport device configured to transport a substrate into a chamber, above a reference object; (b) irradiating the reference object with measurement light from each of the plurality of optical input / output units so that each of the plurality of optical input / output units receives reflected light from the reference object; (c) determining whether the amount of reflected light obtained in (b) during the light-receiving period of the distance measuring module is below or less than a threshold; and (d) if it is determined in (c) that the amount of light is below or less than the threshold, adjusting at least one of the transport module including the transport device and the distance measuring module to increase the amount of light.

14. The method for adjusting a substrate processing system according to claim 13, wherein in (d) above, the distance measuring module is adjusted to lengthen the light reception period.

15. The method for adjusting a substrate processing system according to claim 14, wherein, in (d) above, before adjusting the distance measuring module to lengthen the light reception period, the distance measuring module is adjusted to lengthen the sampling period for measuring the light quantity.

16. The method for adjusting a substrate processing system according to claim 15, wherein, in (d) above, when the distance measuring module is adjusted to lengthen the sampling period, the transport module is adjusted to slow down the movement speed of the end effector.

17. The method for adjusting a substrate processing system according to claim 13, wherein the transport module is adjusted in (d) above to reduce the distance between the plurality of optical input / output units and the reference object.

18. A method for adjusting a substrate processing system according to claim 14, further comprising: (e) after adjusting the distance measuring module in (d) above to lengthen the light reception period, determining whether the amount of light is less than or equal to the threshold; and (f) if it is determined in (e) above that the amount of light is less than or equal to the threshold, adjusting the transport module to reduce the distance between the plurality of optical input / output units and the reference object.

19. A method for adjusting a substrate processing system according to claim 18, further comprising: (g) a step of determining, after (f), whether the amount of light is less than or equal to the threshold; and (h) a step of generating a warning if, in (g), it is determined that the amount of light is less than or equal to the threshold.

20. A substrate processing system according to any one of claims 1 to 7, further comprising: a vacuum transport chamber connected to the chamber and configured to house the transport device; a stocker module connected to the vacuum transport chamber and configured to house a ring member, wherein the transport device is configured to transport the ring member between the stocker module and the vacuum transport chamber; the object includes the ring member; and the control unit is configured to move the end effector in the stocker module to obtain shape information of the ring member from the distance obtained by the distance measuring module.

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