Pressure sensor array and manufacturing method therefor

A pressure sensor array with fine patterns and dome structures addresses sensitivity issues in low-pressure environments by employing a manufacturing method that includes a seed layer, mold formation, and electroplating, achieving high sensitivity for biosignal and wearable device applications.

WO2026121625A1PCT designated stage Publication Date: 2026-06-11INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
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Patent Information

Application Number
PCT/KR2025/018829
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-04
Filing Date
2025-11-14
Publication Date
2026-06-11

AI Technical Summary

Technical Problem

Existing pressure sensors face limitations in sensitivity, particularly in low-pressure environments due to microstructures being fabricated at hundreds of micrometers in size, restricting their applicability.

Method used

A pressure sensor array with a pattern array of several μm in size is manufactured using a method involving a seed layer, mold formation, and electroplating to create dome structures, enabling high sensitivity at low pressures.

Benefits of technology

The pressure sensor array exhibits sensitive responses to low pressures, enhancing applicability to biosignal monitoring and wearable devices through precise pattern arrangement and size adjustment.

✦ Generated by Eureka AI based on patent content.

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Abstract

A pressure sensor array manufacturing method is disclosed. The pressure sensor array manufacturing method comprises: a metal structure formation step of forming a seed layer on a substrate and forming a metal structure on the seed layer; a step of casting the substrate having the metal structure, so as to manufacture a mold that includes a cavity shaped to correspond to the metal structure; and a step of using the mold so as to manufacture a pressure sensor array having an elastic structure corresponding to the cavity.
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Description

Pressure sensor array and method of manufacturing the same

[0001] The present invention relates to a pressure sensor array and a method for manufacturing the same, and more specifically, to a pressure sensor array capable of detecting pressure with high sensitivity even when low pressure is applied through the implementation of a pattern of several μm size and a method for manufacturing the same.

[0002] Pressure sensors are devices that detect and measure pressure changes caused by various factors, such as vibration or pressure, and are widely used across industries ranging from everyday household goods to various industrial facilities.

[0003] Recently, pressure sensors have been continuously evolving, focusing on sensitivity, flexibility, and miniaturization, in response to various applications and requirements. In particular, the increasing demand for pressure sensors in wearable devices and smart medical devices is acting as a major driving force behind the technological advancement of pressure sensors.

[0004] Representative technologies for the sensitivity, flexibility, and miniaturization of pressure sensors include techniques that improve high sensitivity and precision by forming microstructures on the surface of the pressure sensor, and techniques that enhance the flexibility and elasticity of the pressure sensor through stretchable materials while maintaining performance even under deformation.

[0005] As part of these technological advancements, technologies have been introduced to precisely fabricate complex microstructures using 3D printing technology to form microstructures on the surface of flexible pressure sensors.

[0006] However, the above technologies have limitations in that the microstructures are fabricated to be hundreds of micrometers in size, making it difficult to exhibit a sensitive response in low-pressure environments. This limitation is pointed out as a factor that restricts the applicable range of pressure sensors, and research is required to solve this problem.

[0007] The present invention provides a pressure sensor array having a pattern array of several μm in size.

[0008] In addition, the present invention provides a pressure sensor array capable of exhibiting a sensitive response at low pressure.

[0009] In addition, the present invention provides a method for manufacturing a pressure sensor array capable of precisely arranging fine patterns and adjusting the size of the patterns.

[0010] In addition, the present invention provides a method for manufacturing a pressure sensor array that enhances applicability to the field of biosignals and monitoring.

[0011] A method for manufacturing a pressure sensor array according to the present invention comprises: a step of forming a metal structure by forming a seed layer on a substrate and forming a metal structure on the seed layer; a step of manufacturing a mold by casting the substrate on which the metal structure is formed to form a cavity having a shape corresponding to the metal structure; and a step of manufacturing a pressure sensor array having an elastic structure corresponding to the cavity formed using the mold, wherein the metal structure may include a dome structure.

[0012] Additionally, the step of forming the metal structure may include the step of forming a photoresist layer on the seed layer; the step of forming a micro hole in the photoresist layer; and the step of forming the metal structure on the seed layer through the micro hole.

[0013] In addition, the step of forming the metal structure on the seed layer through the micro-hole can be performed by forming the metal structure through electroplating.

[0014] In addition, in the step of forming the metal structure on the seed layer through the micro-hole, the dome structure may be formed on the upper surface of the photoresist layer above the micro-hole.

[0015] In addition, the step of forming the metal structure on the seed layer through the micro-hole may involve forming a cylindrical support within the micro-hole and forming the dome structure on the top of the support.

[0016] In addition, the diameter of the dome structure may be larger than the diameter of the support.

[0017] In addition, the metal structure may be formed in multiple numbers, and the diameters of the dome structures may differ from each other.

[0018] A pressure sensor array according to the present invention comprises a substrate of an elastic material; and a plurality of elastic structures formed on the substrate, wherein the elastic structures may include dome structures.

[0019] In addition, the elastic structure may further include a support that connects the substrate and the dome structure and supports the dome structure.

[0020] In addition, the diameter of the dome structure may be larger than the diameter of the support.

[0021] In addition, the elastic structure may be formed in multiple numbers, and the diameters of the dome structures may differ from each other.

[0022] According to the present invention, a fine pattern can be implemented on the surface of a pressure sensor array through a photolithography process and a copper electroplating process.

[0023] In addition, according to the present invention, by performing copper electroplating by adjusting the current density and plating time, an elastic structure with an upper portion protruding in a dome shape can be formed.

[0024] In addition, according to the present invention, a pattern of several μm in size is implemented in the pressure sensor array through a method for manufacturing a pressure sensor array, so that it can have excellent sensitivity at low pressure.

[0025] In addition, according to the present invention, the pressure sensor array is manufactured using PDMS, a biocompatible polymer material, so it can be applied to the field of wearable devices and monitoring of biosignals through pressure sensing.

[0026] FIG. 1 is a drawing showing a pressure sensor device according to an embodiment of the present invention.

[0027] Figure 2 is a diagram showing the pressure sensor array of Figure 1.

[0028] Figure 3 is a diagram showing an SEM image of the upper surface of a pressure sensor array.

[0029] Figure 4 is a diagram showing a side SEM image of a pressure sensor array.

[0030] FIG. 5 is a drawing showing an SEM image of an elastic structure according to one embodiment of the present invention.

[0031] FIG. 6 is a drawing showing a pressure sensor array according to another embodiment of the present invention.

[0032] FIG. 7 is a drawing showing a pressure sensor array according to another embodiment of the present invention.

[0033] FIG. 8 is an SEM image of a pressure sensor array according to another embodiment of the present invention.

[0034] FIG. 9 is a flowchart illustrating a method for manufacturing a pressure sensor array according to an embodiment of the present invention.

[0035] Figure 10 is a diagram showing the process from the starting stage of Figure 9 to the stage of forming a metal structure on the seed layer.

[0036] FIG. 11 is an SEM image showing microholes formed in a photoresist layer according to an embodiment of the present invention.

[0037] FIG. 12 is a drawing showing a metal structure formed in a microhole according to an embodiment of the present invention.

[0038] FIG. 13 is an SEM image showing a metal structure manufactured according to one embodiment of the present invention.

[0039] Fig. 14 is an SEM image of Fig. 13 viewed from the side.

[0040] Figure 15 is a diagram showing various diameters of a dome structure according to the thickness of the plating and the target height of the metal structure during the copper electroplating process.

[0041] Figure 16 is a graph showing the change in diameter of the dome structure of Figure 15.

[0042] FIG. 17 is a diagram showing the change in height of a metal structure when a dome structure of a single diameter is formed under conditions where the same current density is applied during the copper electroplating process.

[0043] FIG. 18 is a diagram showing the change in height of a metal structure when dome structures of different diameters are formed under conditions where the same current density is applied during the copper electroplating process.

[0044] Figure 19 is a diagram comparing the current distribution and the shape change of a metal structure before and after plating according to the flow conditions of the electrolyte in a copper electroplating process.

[0045] FIG. 20 is a drawing showing the step (S50) of manufacturing the mold of FIG. 9.

[0046] FIG. 21 is a drawing showing the step (S60) of manufacturing the pressure sensor array of FIG. 9.

[0047] FIG. 22 is an image showing the change according to pressure of a pressure sensor array manufactured according to an embodiment of the present invention.

[0048] Figure 23 is a graph showing the rate of change of current of a pressure sensor array using a weight.

[0049] Figure 24 is a graph showing the rate of change of current of a pressure sensor array measured through a finger flick test.

[0050] A method for manufacturing a pressure sensor array according to the present invention comprises: a step of forming a metal structure by forming a seed layer on a substrate and forming a metal structure on the seed layer; a step of manufacturing a mold by casting the substrate on which the metal structure is formed to form a cavity having a shape corresponding to the metal structure; and a step of manufacturing a pressure sensor array having an elastic structure corresponding to the cavity formed using the mold, wherein the metal structure may include a dome structure.

[0051] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to ensure that the concept of the present invention is sufficiently conveyed to those skilled in the art.

[0052] In this specification, when a component is described as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. Additionally, in the drawings, the thicknesses of the films and regions are exaggerated for the effective description of the technical content.

[0053] Additionally, although terms such as first, second, third, etc., have been used to describe various components in the various embodiments of this specification, these components should not be limited by such terms. These terms are used merely to distinguish one component from another. Accordingly, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. Furthermore, in this specification, "and / or" is used to mean including at least one of the components listed before and after it.

[0054] In the specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, components, or combinations thereof described in the specification, and should not be understood as excluding the existence or addition of one or more other features, numbers, steps, components, or combinations thereof. Additionally, in this specification, "connection" is used to include both indirectly connecting multiple components and directly connecting them.

[0055] In addition, in describing the present invention below, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description will be omitted.

[0056] FIG. 1 is a drawing showing a pressure sensor device (10) according to an embodiment of the present invention, FIG. 2 is a drawing showing a pressure sensor array (100) of FIG. 1, FIG. 3 is a drawing showing an SEM image of the upper surface of the pressure sensor array (100), and FIG. 4 is a drawing showing an SEM image of the side of the pressure sensor array (100).

[0057] Referring to FIGS. 1 to 4, a pressure sensor device (10) according to an embodiment of the present invention includes a pressure sensor array (100), a first electrode (200), a second electrode (300), a first protective film (400), a second protective film (500), and a measuring unit (600).

[0058] The pressure sensor array (100) is provided with an elastic material that can be deformed by external pressure and a conductive material whose electrical properties change by said deformation.

[0059] The pressure sensor array (100) may be provided with various types of conductive polymers. The conductive polymer may be selected from polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), polyacetylene, polyphenylene vinylene (PPV), poly(3,4-ethylenedioxythiophene) (PEDOT), polyphenylenebenzobisthiazole derivatives (PBT), etc.

[0060] Additionally, the pressure sensor array (100) may be provided as a composite of a polymer and a conductive powder. According to an embodiment, the pressure sensor array (100) may be provided as a composite of PDMS (Polydimethylsiloxane) and MWCNTs (Multi-walled Carbon Nanotubes).

[0061] The pressure sensor array (100) includes a base film (110) and an elastic structure (120).

[0062] The base film (110) has a predetermined thickness and width. The base film (110) is provided as a support structure for the pressure sensor array (100).

[0063] A plurality of elastic structures (120) are formed on a base film (110) and have a predetermined shape and size. The elastic structures (120) include a support (121) and a dome structure (122).

[0064] The support member (121) is cylindrical in shape and extends from the upper surface of the base film (110) with a predetermined diameter and height. The diameter and height of the support member (121) can be adjusted in various ways. According to an embodiment, the height of the support member (121) may be provided lower than the height of the dome structure. Preferably, the support member (121) may be provided with a lower height so that the dome structure is spaced from the base film (110) by a minimum distance.

[0065] The dome structure (122) is formed on the top of the support (121) in a hemispherical shape. The dome structure (122) is formed with a predetermined diameter and height. According to an embodiment, the dome structure (122) has a larger diameter than the support (121). According to an embodiment, the dome structure (122) has a diameter of several μm. The dome structure (122) is connected to the base film (110) through the support (121) and is spaced apart from the base film (110) by the height of the support (121).

[0066] An elastic structure (120) having the above-described structure can be uniformly formed on a base film (110). The elastic structure (120) can be arranged in a certain number of columns and rows.

[0067] According to one embodiment, the elastic structure (120) may be provided with the same size.

[0068] FIG. 5 is a drawing showing an SEM image of an elastic structure (120) according to one embodiment of the present invention.

[0069] Referring to FIG. 5, the elastic structure (120) can be formed with a dome structure (122) of various diameters. The diameter of the dome structure (122) can be formed to be 4 μm, 8 μm, and 12 μm.

[0070] According to another embodiment, the elastic structure (120) may be provided with different sizes.

[0071] FIG. 6 is a drawing showing a pressure sensor array (100) according to another embodiment of the present invention.

[0072] Referring to FIG. 6, the elastic structure (120) includes a first elastic structure (130) and a second elastic structure (140).

[0073] A plurality of first elastic structures (130) are provided and arranged in pre-set columns and rows.

[0074] A plurality of second elastic structures (140) are provided and arranged in pre-set columns and rows. The second elastic structures (140) are arranged in columns and rows between the first elastic structures (130).

[0075] The dome structure (132) of the first elastic structure (130) has a larger diameter than the dome structure (142) of the second elastic structure (140). And the support of the first elastic structure (130) has a larger diameter than the support of the second elastic structure (140).

[0076] FIG. 7 is a drawing showing a pressure sensor array (100) according to another embodiment of the present invention, and FIG. 8 is an SEM image of a pressure sensor array (100) according to another embodiment of the present invention.

[0077] Referring to FIGS. 7 and 8, the elastic structure includes a first elastic structure (130), a second elastic structure (140), and a third elastic structure (150).

[0078] A plurality of first elastic structures (130) are provided and arranged in pre-set columns and rows.

[0079] A plurality of second elastic structures (140) are provided and arranged in pre-set columns and rows. The second elastic structures (140) are arranged in columns and rows on one side of the first elastic structures (130).

[0080] A plurality of third elastic structures (150) are provided and arranged in pre-set columns and rows. The third elastic structures (150) are arranged in columns and rows between the first elastic structures (130) and the second elastic structures (140).

[0081] The dome structure (132) of the first elastic structure (130) has a larger diameter than the dome structure (142) of the second elastic structure (140). And the support of the first elastic structure (130) has a larger diameter than the support of the second elastic structure (140). The dome structure (142) of the second elastic structure (140) has a larger diameter than the dome structure (152) of the third elastic structure (150). And the support of the second elastic structure (140) has a larger diameter than the support of the third elastic structure (150). The first elastic structure (130), the second elastic structure (140), and the third elastic structure (150) have a uniform height.

[0082] The first electrode (200) has a size corresponding to the base film (110) and is placed on the lower part of the pressure sensor array (100) in the form of a thin film. The first electrode (200) may be provided with a conductive metal material. Preferably, the first electrode (200) is provided with copper. The first electrode (200) is in contact with the base film (110).

[0083] The second electrode (300) is provided with the same size as the first electrode (200) and is placed on top of the pressure sensor array (100). The second electrode (300) may be provided with a conductive metal material. The second electrode (300) is provided with the same material as the first electrode (200). The second electrode (300) is in contact with the dome structure (122).

[0084] The first protective film (400) is a film having an area larger than that of the first electrode (200) and is provided to wrap the first electrode (200). The first protective film (400) may be provided with a material having flexibility and durability. According to an embodiment, a PU (polyurethane)-based film may be provided.

[0085] The second protective film (500) is provided to wrap the second electrode (300) with a film having the same area as the first protective film (400). The second protective film (500) may be provided with the same material as the first protective film (400).

[0086] The first protective film (400) and the second protective film (500) are bonded at their edge regions. As a result, the space between the first protective film (400) and the second protective film (500) is sealed.

[0087] The measuring unit (600) is connected to the first electrode (200) and the second electrode (300) and measures an electrical signal generated according to the shape deformation of the pressure sensor array (100).

[0088]

[0089] Below, a method for manufacturing the pressure sensor array (100) described above is explained in detail.

[0090]

[0091] FIG. 9 is a flowchart showing a method for manufacturing a pressure sensor array (100) according to an embodiment of the present invention, FIG. 10 is a diagram showing the process from the starting step of FIG. 9 to the step of forming a metal structure on a seed layer, FIG. 11 is an SEM image showing a micro hole formed in a photoresist layer according to an embodiment of the present invention, and FIG. 12 is a diagram showing a metal structure formed in a micro hole according to an embodiment of the present invention.

[0092] Referring to FIGS. 9 to 12, a method for manufacturing a pressure sensor array (100) includes the steps of forming a seed layer (12) on a substrate (11) (S10), forming a photoresist layer (13) on the seed layer (12) (S20), forming a micro hole (16) in the photoresist layer (13) (S30), forming a metal structure (17) on the seed layer (12) (S40), manufacturing a mold (S50), and manufacturing the pressure sensor array (100) (S60).

[0093] The step (S10) of forming a seed layer (12) on a substrate (11) involves preparing a silicon substrate (11) by cutting and cleaning it (a), and then forming a seed layer (12) by depositing a conductive metal on the silicon substrate (11) (b). According to the embodiment, platinum (Pt) is used as the conductive metal.

[0094] The step (S20) of forming a photoresist layer (13) on a seed layer (12) involves spin-coating a photoresist photosensitive liquid onto the seed layer (12) (c), and then uniformly drying the photoresist layer (13) by a soft baking process (d). The photoresist layer (13) can be formed with a thickness of 2 to 10 μm. According to an embodiment, the photoresist layer (13) is formed with a thickness of 3 μm.

[0095] The step (S30) of forming micro-holes (16) in the photoresist layer (13) involves aligning a photomask (14) on the dried photoresist layer (13) and performing an exposure process by exposing UV (15) to the pattern area (e). Then, the area exposed to UV (15) is removed by a development process (f). In this process, micro-holes (16) are formed in the photoresist layer (13), and a seed layer (12) is exposed to the outside in the area where the micro-holes (16) are formed.

[0096]

[0097] Referring to FIG. 11, a micro hole (16) with a diameter of approximately 4 μm can be formed in each photoresist layer (13). The micro hole (16) extends vertically from the upper surface of the photoresist layer (13) to the seed layer (12). Referring to (A), a micro hole (16) with a diameter of 4.229 μm to 4.914 μm is formed in a photoresist layer (13) with a thickness of 6 μm, and referring to (B), a micro hole (16) with a diameter of 4.843 μm to 5.079 μm is formed in a photoresist layer (13) with a thickness of 8 μm. This indicates that the thinner the thickness of the photoresist layer (13), the closer the diameter of the micro hole (16) can be formed to the target diameter of 4 μm.

[0098] Referring again to FIG. 9 and FIG. 12, the step (S40) of forming a metal structure (17) on a seed layer (12) forms a metal structure (17) within a micro-hole (16) formed in the photoresist layer (13) (g). The metal structure (17) is formed by an electroplating process. A substrate (11) having a photoresist layer (13) formed thereon is immersed in an electrolyte to grow a metal structure (17) within the micro-hole (16). According to an embodiment, the electrolyte contains copper ions, and copper grows into a metal structure (17) through an electroplating process.

[0099] In the metal structure (17), a cylindrical support (17a) is formed within the micro hole (16), and a dome structure (17b) is formed on the top of the support (17a). The dome structure (17b) is formed convexly on the upper surface of the photoresist layer (13) above the micro hole (16).

[0100] When the electroplating process is completed, the photoresist layer (13) on the seed layer (12) is removed through an ashing process (h).

[0101]

[0102] FIG. 13 is an SEM image showing a metal structure manufactured according to one embodiment of the present invention, and FIG. 14 is an SEM image viewed from the side of FIG. 13.

[0103] Referring to FIGS. 13 and 14, metal structures with different diameters and uniform heights can be formed on a seed layer through a copper electroplating process. The metal structures formed with support diameters of 4.016 μm and 8.339 μm, respectively, have total heights of 3.851 μm and 4.063 μm, respectively, and thus have uniform heights.

[0104]

[0105] FIG. 15 is a diagram showing various diameters of a dome structure according to the plating thickness and the target height of a metal structure during a copper electroplating process, and FIG. 16 is a graph showing the change in diameter of the dome structure of FIG. 15. FIG. 15 (a) shows the change in diameter of the dome structure according to the target height of the metal structure when the plating thickness is 8 μm, and (b) shows the change in diameter of the dome structure according to the target height of the metal structure when the plating thickness is 20 μm.

[0106] (Illegible)

[0107] Through graph (b), it can be seen that when the plating thickness is 20 μm, the diameter of the dome structure is formed to a diameter of 26.04 μm to 26.46 μm when the metal structure is adjusted to a low target height, and the diameter of the dome structure is formed to a diameter of 29.9 μm to 30.39 μm when adjusted to a high height.

[0108] Through this, it can be seen that at thin plating thicknesses, changes in the target height of the metal structure have a negligible effect on the diameter of the dome structure, whereas at thick plating thicknesses, the diameter of the dome structure increases significantly with increasing target height of the metal structure.

[0109] In this way, in the copper electroplating process, the metal structure can be realized in a uniform shape or finely adjusted by controlling process factors such as the plating thickness and the target height of the metal structure.

[0110]

[0111] FIG. 17 is a diagram showing the change in height of a metal structure when a dome structure of a single diameter is formed under conditions where the same current density is applied during the copper electroplating process, and FIG. 18 is a diagram showing the change in height of a metal structure when dome structures of different diameters are formed under conditions where the same current density is applied.

[0112] Referring to Figures 17 and 18, when a dome structure of a single diameter is formed under conditions where the same current density is applied, it was shown that the height of the metal structure gradually decreases as the diameter of the dome structure increases to 4 μm, 8 μm, and 12 μm.

[0113] On the other hand, when dome structures of different diameters are formed under conditions where the same current density is applied, it was found that the height of the metal structure also gradually increased as the diameter of the dome structure increased to 4㎛, 8㎛, and 12㎛.

[0114] In this way, the height of the metal structure can be adjusted by adjusting the diameter and / or arrangement of the dome structure during the copper electroplating process.

[0115]

[0116] Figure 19 is a diagram comparing the current distribution and the shape change of a metal structure before and after plating according to the flow conditions of the electrolyte in a copper electroplating process. Figure 19 (a) shows the change before and after copper electroplating when there is no flow of the electrolyte (No flow), Figure 19 (b) shows the change before and after copper electroplating when the electrolyte has a straight flow (Normal flow), and Figure 19 (c) shows the change before and after copper electroplating when the electrolyte has a sinusoidal flow (Sine flow).

[0117] Referring to (a), in the absence of electrolyte flow, the current density before copper electroplating was found to be uniformly distributed and symmetrical. After copper electroplating, the metal structure was formed into a symmetrical structure with a thick dome shape in the center.

[0118] Referring to (b), when the electrolyte has a linear flow, it was found that before copper electroplating, the electrolyte flows in one direction, and the current density is asymmetrically distributed along the direction of flow of the electrolyte. After copper electroplating, the metal structure was formed as an asymmetric structure with the current skewed to one side.

[0119] (c) When the electrolyte has a sinusoidal flow, before copper electroplating, the electrolyte flows in a sinusoidal form, and the current density is distributed symmetrically with respect to the center. After copper electroplating, the metal structure is formed in a flat shape with a symmetrical structure.

[0120] In this way, by adjusting the flow conditions of the electrolyte in the copper electroplating process, the shape and structure of the metal structure (17) formed in the seed layer can be adjusted.

[0121]

[0122] FIG. 20 is a drawing showing the step (S50) of manufacturing the mold of FIG. 9.

[0123] Referring again to FIGS. 9 and FIGS. 20, the step of manufacturing a mold (S50) involves placing the substrate (11) on which the metal structure (17) is formed in a container, pouring in a polymer resin (18), and curing it (a). In this process, a cavity with a shape corresponding to the metal structure (17) is formed in the cured polymer (18).

[0124] After separating the substrate (11) on which the metal structure (17) is formed from the polymer (18), the surface on which the cavity is formed is plasma-treated (19) with a power of 100W for 1 minute (b). Then, the plasma-treated polymer (18) is exposed to ethanol (20) and maintained in a vacuum for 1 hour (c). Afterward, the ethanol (20) is dried in a heating chamber for 1 hour to complete the mold (18) (d).

[0125]

[0126] FIG. 21 is a drawing showing the step (S60) of manufacturing the pressure sensor array (100) of FIG. 9.

[0127] Referring again to FIG. 9 and FIG. 21, the step (S60) of manufacturing the pressure sensor array (100) involves pouring a conductive polymer resin (21) into the mold (18) (e), removing bubbles, and heating to cure it (f). The cured conductive polymer is separated from the mold to complete the pressure sensor array (100) (g). The pressure sensor array (100) has flexibility due to the conductive polymer, and an elastic structure (120) corresponding to a cavity is formed on one side.

[0128]

[0129] FIG. 22 is an image showing a change according to pressure of a pressure sensor array (100) manufactured according to an embodiment of the present invention.

[0130] Referring to FIG. 22, when external pressure is applied to the pressure sensor array (100), the base film (110) and the elastic structure (120) formed on the base film (110) are deformed by compression, and an electrical signal changes according to the change in shape. The electrical signal is transmitted to a measuring unit (600) through a first electrode (200) and a second electrode (300) and measured. Through this change in electrical signal, the magnitude of the pressure applied to the pressure sensor array (100) can be measured.

[0131]

[0132] FIG. 23 is a graph showing the rate of change of current of a pressure sensor array (100) using a weight.

[0133] Referring to FIG. 23, when a weight of 5g is placed on the pressure sensor array (100), it can be seen that the rate of change of current (△I / I0) of the pressure sensor array (100) changes. The pressure sensor array (100) is shown to respond sensitively to a load of 5g and maintain a constant output value. In addition, the rate of change of current (△I / I0) output from the pressure sensor array (100) is shown to repeat at a similar level in each section where a load is applied, and to be restored to an initial value when the load is removed.

[0134]

[0135] FIG. 24 is a graph showing the rate of change of current of a pressure sensor array (100) measured through a finger flick test.

[0136] Referring to FIG. 24, in the finger flick test, it can be seen that the rate of change of current (△I / I0) changes whenever force is applied to the pressure sensor array (100). The pressure sensor array (100) responds sensitively to the pressure of the finger and maintains a constant output value. It was found that the output rate of change of current (△I / I0) repeats at a similar level in each section where pressure is applied to the finger, and returns to the initial value when the pressure is removed.

[0137] In this way, the pressure sensor array (100) is confirmed to have excellent performance as a pressure sensor, having high sensitivity to small stimuli and loads, and showing a consistent and rapid response even in repetitive tests.

[0138]

[0139] Although the present invention has been described in detail using preferred embodiments, the scope of the invention is not limited to specific embodiments and should be interpreted by the appended claims. Furthermore, those skilled in the art will understand that many modifications and variations are possible without departing from the scope of the invention.

[0140] The pressure sensor array according to the present invention can be used as a pressure sensor capable of detecting pressure with high sensitivity even when low pressure is applied.

Claims

1. A metal structure formation step of forming a seed layer on a substrate and forming a metal structure on the seed layer; A step of manufacturing a mold having a cavity formed in a shape corresponding to the metal structure by casting a substrate having the metal structure formed thereon; and The method includes the step of manufacturing a pressure sensor array having an elastic structure corresponding to the cavity formed using the above mold, wherein The above metal structure is a method for manufacturing a pressure sensor array including a dome structure.

2. In Paragraph 1, The above metal structure forming step A step of forming a photoresist layer on the seed layer; A step of forming microholes in the above photoresist layer; and A method for manufacturing a pressure sensor array comprising the step of forming the metal structure on the seed layer through the micro-hole.

3. In Paragraph 2, The step of forming the metal structure on the seed layer through the micro-hole is a method for manufacturing a pressure sensor array by forming the metal structure through electroplating.

4. In Paragraph 3, A method for manufacturing a pressure sensor array, wherein, in the step of forming the metal structure on the seed layer through the micro-hole, the dome structure is formed on the upper surface of the photoresist layer above the micro-hole.

5. In Paragraph 2, The step of forming the metal structure on the seed layer through the micro-hole is, A method for manufacturing a pressure sensor array by forming a cylindrical support within the micro-hole and forming the dome structure on the top of the support.

6. In Paragraph 5, A method for manufacturing a pressure sensor array in which the diameter of the dome structure is larger than the diameter of the support.

7. In Paragraph 5, A method for manufacturing a pressure sensor array in which a plurality of metal structures are formed and the diameters of the dome structures are different from each other.

8. A substrate of elastic material; and It includes a plurality of elastic structures formed on the above substrate, The above elastic structure Pressure sensor array including a dome structure.

9. In Paragraph 8, The above elastic structure A pressure sensor array further comprising a support connecting the substrate and the dome structure and supporting the dome structure.

10. In Paragraph 9, A pressure sensor array in which the diameter of the dome structure is larger than the diameter of the support.

11. In Paragraph 8, A pressure sensor array in which a plurality of elastic structures are formed and the diameters of the dome structures are different from each other.