Memory operation method and memory chip

By measuring and storing operation depth information during wafer testing, and combining this with a phased execution and verification method, the problem of uncontrollable threshold voltage in charge-trapping flash memory chips was solved, thus optimizing the performance of the memory chips.

WO2026124231A1PCT designated stage Publication Date: 2026-06-18PUYA SEMICON SHANGHAI CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
PUYA SEMICON SHANGHAI CO LTD
Filing Date
2025-11-27
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

In existing charge-trap flash memory chips, the uncertainty of charge escape during erase or programming operations makes it difficult to accurately control the threshold voltage, which affects the performance of the memory chip.

⚗Method used

In wafer testing, the operational depth information of the memory cells is pre-determined, and this depth information is used for depth verification during actual operation to ensure that the threshold voltage change of the memory cells is within the expected range. By performing operations in stages and verifying the depth information, precise control is achieved.

🎯Benefits of technology

The overall performance of the memory chip has been optimized to ensure that the threshold voltage is within the expected range, thereby improving the accuracy and reliability of operation.

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    Figure CN2025138201_18062026_PF_FP_ABST
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Abstract

A memory operation method and a memory chip. The method comprises: obtaining an operation depth (S101), wherein the operation depth is determined in a wafer test and is stored in a memory cell, and the operation depth represents a threshold voltage change level of the memory cell after an operation is performed; and when the operation is performed, using the operation depth to perform depth check until the operation depth is reached (S102). In the method, the operation depth of the memory chip can be first accurately tested, and then the operation depth is used to instruct an actual operation, thereby achieving the purpose of accurately controlling the operation effect, and avoiding the problem that the threshold voltage of the memory cell becomes complex and uncontrollable.
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