Film for temporary fixation, laminate for temporary fixation, and method for manufacturing semiconductor device

Abstract

This film for temporary fixation used for temporarily fixing a semiconductor member and a support member contains (A) a hydrocarbon resin having a monomer unit derived from styrene and (B) an epoxy resin, where the content of the component (A) is 65 pts.mass or less with respect to 100 pts.mass of the total of the component (A) and the component (B).

Description

Temporary Fixing Film, Temporary Fixing Laminate, and Method for Manufacturing Semiconductor Device 【0001】 The present invention relates to a temporary fixing film, a temporary fixing laminate, and a method for manufacturing a semiconductor device. 【0002】 In the manufacture of semiconductor elements, after incorporating an integrated circuit into a semiconductor substrate such as a semiconductor wafer or a semiconductor chip, the semiconductor member having the semiconductor substrate may be processed. The semiconductor member is subjected to processing such as, for example, back grinding or singulation by dicing. The semiconductor member is usually processed in a state of being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Documents 1 and 2 disclose a method of separating a semiconductor member from a support member by irradiating a temporary fixing material layer with light (laser light). 【0003】 Japanese Patent Application Laid-Open No. 2016-138182 Japanese Patent Application Laid-Open No. 2013-033814 【0004】 As a step after separating the semiconductor member from the support member, it may be performed to remove the temporary fixing material layer remaining on the semiconductor member. As a method for removing the temporary fixing material at this time, cleaning with a solvent or the like is known. However, since cleaning with a solvent has problems such as a long processing time and a large environmental load, it is desired to remove the temporary fixing material layer by physically peeling it off (also referred to as "peel"). 【0005】 On the other hand, semiconductor devices such as recent SiP (System in Package) modules are becoming thinner. When manufacturing such a semiconductor device by a method including a step of processing a semiconductor member temporarily fixed to a support member, the semiconductor member after the processing is also thinned. In this case, when the temporary fixing material layer remaining on the semiconductor member is removed by peeling after separating the semiconductor member after the processing from the support member, it is desirable that no large stress is applied to the semiconductor member. 【0006】 An object of the present invention is to provide a temporary fixing film capable of reducing the peel strength when removing the temporary fixing material layer remaining on a semiconductor member by peeling, and a temporary fixing laminate and a method for manufacturing a semiconductor device using the same. 【0007】 The present invention includes the following aspects: [1] A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising (A) a hydrocarbon resin having monomer units derived from styrene and (B) an epoxy resin, wherein the content of component (A) is 65 parts by mass or less with respect to 100 parts by mass of the total of components (A) and (B). [2] The temporary fixing film according to [1], wherein component (B) comprises (B1) an epoxy resin having an alicyclic structure and (B2) an epoxy resin having an aromatic ring. [3] A temporary fixing laminate comprising, in this order, a support member, a light-absorbing layer, and a temporary fixing material layer consisting of the temporary fixing film according to [1] or [2] or a cured product thereof. [4] A method for manufacturing a semiconductor device, comprising the steps of: preparing the temporary fixing laminate described in [3]; temporarily fixing a semiconductor member to the support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member. [5] A method for manufacturing a semiconductor device according to [4], wherein the temporary fixing material layer in the temporary fixing laminate is made of the temporary fixing film, and the semiconductor member is placed on or pressed onto the temporary fixing material layer and then the temporary fixing material layer is heat-cured. 【0008】 According to the present invention, it is possible to provide a temporary fixing film that can reduce the peel strength when removing the temporary fixing material layer remaining on a semiconductor member by peeling, as well as a temporary fixing laminate using the same and a method for manufacturing a semiconductor device. 【0009】 Figure 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing film. Figure 2 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. 【0010】 Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure. 【0011】 The same applies to numerical values ​​and their ranges in this disclosure, and this disclosure is not limited. Numerical ranges indicated using “~” in this specification include the numerical values ​​before and after “~” as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of one numerical range may be replaced by the upper or lower limit of another numerical range described in stages. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced by the values ​​shown in the examples (manufacturing examples). 【0012】 In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. Furthermore, in this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved. 【0013】 In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer. 【0014】 In this specification, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more, to the extent that the conditions are met. The content of each component refers to the total amount of multiple substances corresponding to each component, unless otherwise specified. 【0015】[Temporary Fixing Film] The temporary fixing film of this embodiment is used to temporarily fix a semiconductor member and a support member. Figure 1 is a schematic cross-sectional view showing one embodiment of the temporary fixing film. The temporary fixing film 1 shown in Figure 1 is composed of a resin composition layer 6 containing a thermoplastic resin and a thermosetting resin. 【0016】 The temporary fixing film 1 contains, as a thermoplastic resin, (A) a hydrocarbon resin having monomer units derived from styrene (hereinafter sometimes referred to as component (A)), and as a thermosetting resin, (B) an epoxy resin (hereinafter sometimes referred to as component (B)). Note that a hydrocarbon resin refers to a resin whose main skeleton is composed of hydrocarbons. 【0017】 (A) Examples of component (A) include styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-butadiene-styrene block copolymer (SBS), styrene-isobutylene-styrene block copolymer (SIBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and modified versions thereof. Component (A) can be used individually or in combination of two or more. 【0018】 The monomer unit content of component (A) may be 1 to 50% by mass, or 5 to 40% by mass, based on the total amount of component (A). When the monomer unit content of styrene is within this range, a phase separation structure suitable for peeling tends to be more readily formed in the cured film, and the effects of the present invention tend to be significantly exhibited. When two or more types of component (A) are used in combination, the total amount of monomer units derived from styrene may be within the above range based on the total amount of component (A). 【0019】 (A) Component may be hydrogenated. 【0020】 Component (A) may be carboxylated with maleic anhydride or the like. In this case, the acid value of component (A) may be 1 to 300 mg KOH / g or 5 to 200 mg KOH / g, from the viewpoint of affinity with component (B). 【0021】 The Tg of component (A) may be -80 to 30°C, -75 to 25°C, or -70 to 20°C. When the Tg of component (A) is within the above range, the film can be given adhesive properties suitable for application. 【0022】 In this specification, the Tg of a thermoplastic resin is the intermediate glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the intermediate glass transition temperature calculated by measuring the change in heat quantity under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, in accordance with the method compliant with JIS K7121:2012. 【0023】 The weight-average molecular weight (Mw) of component (A) may be 5,000 to 100,000,000, or 10,000 to 500,000. When the weight-average molecular weight of component (A) is within the above range, the film-forming properties tend to be good. 【0024】 In this specification, the weight-average molecular weight of the resin is expressed as a polystyrene-converted value using a calibration curve based on standard polystyrene obtained by gel permeation chromatography (GPC). 【0025】 The temporary fixing film 1 may contain thermoplastic resins other than component (A). Examples of other thermoplastic resins include polycarbonate, polyphenylene sulfide, polyethersulfone, polyetherimide, polyimide, petroleum resin, novolac resin, etc. 【0026】 The content of component (A) in the temporary fixing film 1 may be 50% by mass or more, 80% by mass or more, or 100% by mass, based on the total amount of thermoplastic resin contained in the temporary fixing film 1. When the content of component (A) is within the above range, a phase separation structure suitable for peeling tends to be more easily formed in the film after curing, and the effects of the present invention tend to be significantly exhibited. 【0027】Component (B) can be any compound having two or more epoxy groups in its molecule, and examples include alicyclic epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, biphenyl novolac type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, bisphenol F novolac type epoxy resin, dicyclopentadiene type epoxy resin, aliphatic chain epoxy resin, triphenylmethane type epoxy resin, glycidyl ester type epoxy resin, isocyanurate type epoxy resin, hydantoin type epoxy resin, glycidyl ether compounds of polyfunctional phenols, glycidyl ether compounds of difunctional alcohols, and hydrogenated versions thereof. Component (B) can be used alone or in combination of two or more. 【0028】 (B) Component may have an epoxy equivalent of 90 to 1500 g / eq, 100 to 1400 g / eq, or 110 to 1300 g / eq, from the viewpoint of the heat resistance of the film after curing. The epoxy equivalent is determined by the method standardized in JIS standard (K7236:2001). 【0029】 From the viewpoint of further reducing peel strength, the temporary fixing film 1 may contain, as component (B), (B1) an epoxy resin having an alicyclic structure (hereinafter sometimes referred to as component (B1)) and (B2) an epoxy resin having an aromatic ring (hereinafter sometimes referred to as component (B2)). 【0030】 (B1) Examples of component include dicyclopentadiene type epoxy resin and cyclohexane skeleton-containing epoxy resin. 【0031】 (B2) Examples of component (B2) include triphenylmethane type epoxy resin, tetrakisphenolethane type epoxy resin, naphthalene skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, etc. 【0032】The ratio of component (B1) to component (B2) in the temporary fixing film 1 may be such that the mass ratio (B1) / (B2) is 1 / 9 to 9 / 1, or 3 / 7 to 7 / 3. In this case, a phase separation structure suitable for peeling tends to be more likely to occur within the cured film. 【0033】 The temporary fixing film 1 may contain thermosetting resins other than component (B). Examples of other thermosetting resins include acrylic resin, silicone resin, phenolic resin, thermosetting polyimide resin, polyurethane resin, melamine resin, urea resin, and the like. 【0034】 The content of component (B) in the temporary fixing film 1 may be 50% by mass or more, 80% by mass or more, or 100% by mass, based on the total amount of thermosetting resin contained in the temporary fixing film 1. When the content of component (B) is within the above range, a phase separation structure suitable for peeling tends to be more easily formed in the film after curing, and the effects of the present invention tend to be significantly exhibited. 【0035】 The content of component (A) in the temporary fixing film 1 is 65 parts by mass or less per 100 parts by mass of the total of components (A) and (B), from the viewpoint of reducing the peel strength when peeling from the support member, and may be 10 to 65 parts by mass or 15 to 60 parts by mass from the viewpoint of improving film-forming properties. 【0036】 The total content of component (A) and component (B) in the temporary fixing film 1 may be 30% by mass or more, 40% by mass or more, or 50% by mass or more, based on the total amount of the temporary fixing film. 【0037】 The temporary fixing film 1 may further contain a curing accelerator that promotes the curing reaction of the thermosetting resin, such as component (B). Examples of curing accelerators include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. 【0038】The content of the curing accelerator may be 0.01 to 5% by mass based on the total amount of the thermosetting resin contained in the temporary fixing film 1. When the content of the curing accelerator is within such a range, the curability of the thermosetting resin and the heat resistance after curing tend to be more excellent. From the viewpoint of achieving both the storage stability before curing and the curability and heat resistance after curing of the temporary fixing film, the content of the curing accelerator may be 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass or more based on the total amount of the thermosetting resin, and may also be 4.5% by mass or less, 4.0% by mass or less, or 3.5% by mass or less. 【0039】 The temporary fixing film 1 may further contain a polymerizable monomer and a polymerization initiator as thermosetting components other than the above-described thermosetting resin. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoints of material selectivity and ease of availability, the polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, arylated vinyl, and the like. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional (1-functional), bifunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, it may be a bifunctional or more (meth)acrylate. 【0040】 The content of the polymerizable monomer may be 0.1 to 100 parts by mass with respect to 100 parts by mass of the component (B). 【0041】 The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photo radical polymerization initiator. 【0042】 The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the polymerizable monomer. 【0043】The temporary fixing film 1 may further contain additives such as an insulating filler, a sensitizer, an antioxidant, etc. 【0044】 The insulating filler can be added for the purpose of imparting low thermal expansion, low moisture absorption, etc. to the temporary fixing film 1. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. The insulating filler may be particles whose surface is treated with a surface treatment agent from the viewpoint of dispersibility in a solvent. The surface treatment agent may be, for example, a silane coupling agent. 【0045】 The content of the insulating filler may be 0.1 to 50% by mass based on the total amount of the temporary fixing film. When the content of the insulating filler is within such a range, there is a tendency to further improve the heat resistance without hindering light transmission. Also, when the content of the insulating filler is within such a range, it may contribute to easy peelability. 【0046】 Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, 1-chloro-4-propoxythioxanthone, and the like. 【0047】 The content of the sensitizer may be 0.01 to 10% by mass based on the total amount of the temporary fixing film. When the content of the sensitizer is within such a range, there is a tendency to easily reduce the residue after peeling. 【0048】 Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. 【0049】The antioxidant content may be 0.1 to 10% by mass, based on the total amount of the temporary fixing film. When the antioxidant content is within this range, it tends to reduce the residue after peeling. 【0050】 [Method for Manufacturing Temporary Fixing Film] For example, to manufacture the temporary fixing film 1, first, each component (resin composition) constituting the temporary fixing film is dissolved or dispersed by stirring, mixing, kneading, etc., in a solvent to prepare a varnish of the resin composition. Then, the varnish of the resin composition is applied to a support film that has been treated with a mold release agent using a knife coater, roll coater, applicator, comma coater, die coater, etc., and the solvent is evaporated by heating to form a temporary fixing film (resin composition layer) made of the resin composition on the support film. At this time, the thickness of the temporary fixing film (resin composition layer) can be adjusted by adjusting the amount of varnish of the resin composition applied. 【0051】 The solvent used in the preparation of the resin composition varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonate esters such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish. 【0052】In this embodiment, from the viewpoint of reducing the peel strength when separating from the support member, a solvent S1 which is a good solvent for component (B) and a solvent S2 which is a poor solvent for component (B) can be used in combination. As solvent S1, the above-mentioned solvents can be used, for example, cyclohexanone, cyclopentanone, methyl ethyl ketone, etc. As solvent S2, examples include limonene, toluene, xylene, mesitylene, pseudocumene, etc. 【0053】 Solvent S1 may be a solvent with a solubility parameter (SP value) of 9.5 to 14, or 9.5 to 13.5. Solvent S2 may be a solvent with an SP value of 6 to 9.5, 6 or more and less than 9.5, or 6.5 to 9.4. 【0054】 The amount of solvent S2 may be 50 to 900 parts by mass, or 80 to 700 parts by mass, when the amount of solvent S1 is 100 parts by mass. 【0055】 The stirring, mixing, or kneading of the resin composition during the preparation of the varnish can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like. 【0056】 Examples of support films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films of polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer. The thickness of the support film may be, for example, 1 to 250 μm. 【0057】 The heating conditions for volatilizing the solvent from the varnish of the resin composition coated onto the support film can be appropriately set according to the solvent used. For example, the heating conditions may be 40 to 180°C for 0.1 to 30 minutes. From the viewpoint of reducing the peel strength when separating from the support member, the heating temperature may be 110°C or higher, 130°C or higher, or 150°C or higher. 【0058】 The thickness of the temporary fixing film 1 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation. 【0059】 [Temporary Fixing Laminate and Method for Manufacturing the Same] The temporary fixing laminate of this embodiment is used to temporarily fix a semiconductor member and a support member. Figure 2 is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate. The temporary fixing laminate 20 shown in Figure 2 has a support member 2, a light-absorbing layer 4, and a temporary fixing material layer 6c made of the temporary fixing film 1 (resin composition layer 6) of this embodiment or a cured product thereof (for example, a heated one), in this order from the support member 2. The temporary fixing material layer 6c has a surface S on the side where the semiconductor member is placed (opposite to the light-absorbing layer 4). 【0060】 The support member 2 is a plate-like body with high transmittance that can withstand the loads applied during the processing of semiconductor components. Examples of the support member 2 include inorganic glass substrates and transparent resin substrates. 【0061】 The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 2 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 2 is 2.0 mm or less, material costs tend to be reduced. 【0062】 The light-absorbing layer 4 is a layer that absorbs light and generates heat. The light-absorbing layer 4 may be, for example, a conductive layer containing a conductor that absorbs light and generates heat. Examples of conductors constituting the conductive layer include metals, metal oxides, and conductive carbon materials. The metal may be a single metal such as chromium, copper, titanium, silver, platinum, or gold, or an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. The conductor may be chromium, titanium, or a conductive carbon material. The light-absorbing layer 4 may be, for example, a conductive resin layer containing a conductor that absorbs light and generates heat, and a resin. 【0063】The light-absorbing layer 4 may be a single or multiple metal layer, for example, a metal layer consisting of a copper layer and a titanium layer. 【0064】 If the light-absorbing layer 4 is a single layer of metal, the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the light-absorbing layer 4 as an alloy. 【0065】 The light-absorbing layer 4 is composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 2 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high modulus of elasticity, good peelability tends to be easily obtained. From this viewpoint, the first layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). These metals may be included in the first and second layers as an alloy. 【0066】The thickness of the light-absorbing layer 4 may be 1 to 5000 nm, 100 to 3000 nm, or 50 to 300 nm from the viewpoint of easy peelability. If the light-absorbing layer 4 is a single layer or a metal layer consisting of multiple layers, the thickness of the light-absorbing layer 4 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, and may be 1000 nm or less, 800 nm or less, 500 nm or less, or 300 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a single layer metal layer, the thickness of the light-absorbing layer 4 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, and may be 1000 nm or less, 800 nm or less, or 500 nm or less from the viewpoint of good peelability. If the light-absorbing layer 4 is a conductor-containing resin layer, the thickness of the light-absorbing layer 4 may be 1 to 50 μm, 1 μm or more, 5 μm or more, or 10 μm or more, and 50 μm or less, 30 μm or less, or 20 μm or less. 【0067】 The temporary fixing layer 6c consists of the temporary fixing film 1 (resin composition layer 6) of this embodiment or its cured product (for example, a heated product). The following describes the case where the temporary fixing layer 6c is a cured product. 【0068】 Figures 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. The temporary fixing laminate 20 can be obtained, for example, by a method that includes the steps of: preparing a laminate precursor 10 having a support member 2, a light-absorbing layer 4, and a resin composition layer 6 of this embodiment in that order from the support member 2; and heating the laminate precursor 10 and heating the resin composition layer 6 to form a temporary fixing material layer 6c. 【0069】 The laminated precursor 10 can be obtained, for example, by a method that includes the steps of providing a light-absorbing layer 4 on a support member 2 and attaching the temporary fixing film 1 of this embodiment to the light-absorbing layer 4 to form a resin composition layer 6. 【0070】The light-absorbing layer 4 can be formed on the support member 2 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or by chemical vapor deposition (CVD) such as plasma chemical deposition. Alternatively, the light-absorbing layer 4 can be formed on the support member 2 by electroplating or electroless plating. With physical vapor deposition, even if the support member 2 has a large surface area, the light-absorbing layer 4 covering the surface of the support member 2 can be efficiently formed. 【0071】 Methods for attaching the temporary fixing film 1 to the light-absorbing layer 4 include, for example, roll lamination, vacuum lamination, and heat pressing. Lamination can be carried out, for example, under temperature conditions of 0 to 120°C. 【0072】 Next, a temporary fixing layer 6c is formed by heating the resin composition layer 6 of the obtained laminated precursor 10. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. In this way, the temporary fixing layer 6c comes to contain cured product of component (B). Furthermore, in the temporary fixing layer 6c, a phase separation structure between component (A) and cured product of component (B) is formed from the resin composition containing components (A) and (B) in the specific blending ratios described above, and the content ratio of cured product of component (B) is increased, which can result in a lower peel strength when peeling from the support member. 【0073】 The temporary fixing layer 6c has a surface tack force of 9.8 × 10 at 30°C on surface S. －３ N (1.0 gf) or higher, 2.0 × 10 －３ N (1.0 gf) or higher, 2.9 × 10 －２ N (1.0 gf) or higher, or 3.9 × 10 －２ N (1.0 gf) or higher is acceptable. The surface tack force can be increased by methods such as reducing the amount of monomer units derived from styrene in component (A), increasing the amount of component (A) in the temporary fixing film 1, or reducing the amount of insulating filler added. 【0074】To determine the surface tack force, prepare a test specimen similar to that used for the indentation test, and place the specimen on the 30°C stage of the probe tacking tester for 1 minute. Subsequently, the surface tack force can be determined using the probe tacking tester under the following measurement conditions. 【0075】 (Measurement conditions) Probe: Made of SUS (stainless steel), 5 mm in diameter Push-in / pull-out speed: 600 mm / sec Push-in time: 1 second 【0076】 The thickness of the temporary fixing material layer 6c may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less, from the viewpoint of stress relaxation. 【0077】 In this way, a temporary fixed laminate 20 can be obtained from the laminate precursor 10. 【0078】 [Method for Manufacturing a Semiconductor Device] The method for manufacturing a semiconductor device according to this embodiment comprises the steps of: preparing the above-mentioned temporary fixing laminate (preparation step); temporarily fixing the semiconductor member to the support member via the light-absorbing layer and the temporary fixing material layer (temporary fixing step); processing the semiconductor member that has been temporarily fixed to the support member (processing step); and separating the semiconductor member from the support member by irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side (separation step). According to the method for manufacturing a semiconductor device according to this embodiment, since the above-mentioned temporary fixing laminate is used, the semiconductor member and the support member can be sufficiently fixed, and furthermore, the processed semiconductor member can be easily separated from the support member while suppressing the generation of residue. 【0079】 (Preparation Step) Figures 4(a) and 4(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the preparation step, the above-mentioned temporary fixing laminate 20 is prepared for temporarily fixing the semiconductor components to the support member while the semiconductor components are being processed for the manufacture of the semiconductor device (see Figure 4(a)). Here, we will describe the case where the temporary fixing material layer 6c is a cured product. 【0080】(Temporary Fixing Process) In the temporary fixing process, the semiconductor member 40 is temporarily fixed to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. The temporary fixing material layer 6c has a surface S opposite to the light-absorbing layer 4. In the temporary fixing process, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by pressing the semiconductor member 40 while it is placed on the temporary fixing material layer 6c (see Figure 4(b)). In other words, the semiconductor member 40 can be temporarily bonded to the support member 2 via the light-absorbing layer 4 and the temporary fixing material layer 6c. In this way, a laminate 30 is formed comprising a temporary fixing laminate 20 and a semiconductor member 40 provided on the temporary fixing material layer 6c of the temporary fixing laminate 20. 【0081】 Examples of semiconductor members 40 include those having a semiconductor substrate 42 and a redistribution layer 44. When the semiconductor member 40 has a semiconductor substrate 42 and a redistribution layer 44, the semiconductor member 40 is temporarily fixed to the support member 2 via the light absorption layer 4 and the temporary fixing layer 6c, with the redistribution layer 44 facing the temporary fixing layer 6c side. The semiconductor member 40 may further have external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Figure 4(a), a plurality of semiconductor members 40 are arranged on the surface S of the temporary fixing layer 6c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin the semiconductor device, as well as to suppress cracking during transport, processing, etc. 【0082】The semiconductor member 40 placed on the temporary fixing material layer 6c is pressed against the temporary fixing material layer 6c, for example, using a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions may be an atmospheric pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds. 【0083】 Furthermore, when using a temporary fixing laminate in which the temporary fixing layer is an uncured temporary fixing film, the temporary fixing layer may be heat-cured after the semiconductor member is placed or pressed onto the temporary fixing layer. Heating may be performed simultaneously with the placement or pressing of the semiconductor member, or before the placement or pressing. The heating conditions may be, for example, 150 to 300°C or 180 to 250°C for 1 to 180 minutes or 10 to 120 minutes. 【0084】 (Processing Steps) Figures 5(a), 5(b), and 5(c) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the processing steps, the semiconductor member 40, which is temporarily fixed to the support member 2, is processed. Figure 5(a) shows an example of processing including thinning of the semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a redistribution layer 44. The processing of the semiconductor member is not limited to this and may include, for example, thinning of the semiconductor substrate, dicing of the semiconductor member, formation of through-electrodes (silicon through-electrodes), etching, plating reflow, sputtering, or a combination thereof. 【0085】After processing the semiconductor member 40, a sealing layer 50 is formed to seal the processed semiconductor member 40a, as shown in Figure 5(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. Examples of thermosetting resin compositions used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and / or flame retardants. 【0086】 The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the processed semiconductor member 40a with a sealing film that has been heat-melted at 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa) for 0.5 to 10 minutes using these devices. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm. 【0087】 After forming the sealing layer 50, the sealing layer 50 and the temporary fixing material layer 6c may be divided into multiple parts, each containing one processed semiconductor member 40a, as shown in Figure 5(c). 【0088】 (Separation Process) Figures 6(a) and 6(b) are schematic cross-sectional views showing one embodiment of a semiconductor device manufacturing method. In the separation process, light is irradiated onto the light-absorbing layer of the temporary fixing laminate from the support member side, thereby separating the semiconductor member from the support member. 【0089】As shown in Figure 6(a), light A is irradiated onto the light-absorbing layer 4 of the temporary fixing laminate 20 from the support member 2 side to separate the processed semiconductor member 40a from the support member 2. Irradiation with light A causes the light-absorbing layer 4 to absorb light and instantaneously generate heat. The generated heat can cause, for example, melting, carbonization, or sublimation of the temporary fixing material layer 6c, thermal stress between the support member 2 and the processed semiconductor member 40a, and scattering of the light-absorbing layer 4. One or more of these phenomena are the main causes of cohesive delamination, interfacial delamination, etc., which can easily separate the processed semiconductor member 40a from the support member 2. In order to separate the processed semiconductor member 40a from the support member 2, a small amount of stress may be applied to the processed semiconductor member 40a along with the irradiation with light A. 【0090】 Light A includes at least infrared light. The wavelength of infrared light is typically between 700 nm and 1 mm. 【0091】 Light A in the separation process may be coherent light. Coherent light is an electromagnetic wave that has properties such as high coherence, high directivity, and high monochromaticity. Coherent light tends to have high intensity because light of the same wavelength and phase reinforces and combines with each other. Laser light is generally coherent light. Examples of laser light include YAG lasers, fiber lasers, semiconductor lasers, helium-neon lasers, argon lasers, and excimer lasers. The wavelength of the laser light may be 1300 nm or less. By having a wavelength of 1300 nm or less, the light absorption of the support member 2 is suppressed and the light absorption of the metal layer 12 is increased, making it possible to peel off with lower light irradiation energy. Coherent light may also be pulsed light. 【0092】Light A in the separation process may be incoherent light. Incoherent light is non-coherent light, and is an electromagnetic wave that has properties such as not generating interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be defined as light excluding laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple processed semiconductor components 40a. Incoherent light may include infrared light. Incoherent light may also be pulsed light. 【0093】 The light source is not particularly limited, but it may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by applying and discharging a discharge tube filled with xenon gas. Because a xenon lamp discharges while repeatedly ionizing and exciting, it stably has a continuous wavelength range from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps have a shorter start-up time, which can significantly reduce the time required for the process. In addition, although high heat is instantaneously generated because a high voltage is applied for light emission, xenon lamps are advantageous because they have a short cooling time and allow for continuous operation. 【0094】 The irradiation conditions for the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 40a after processing, irradiation conditions that can separate the semiconductor member 40a after processing in a single irradiation may be set. 【0095】A portion of the temporary fixing material layer 6c may adhere to the separated processed semiconductor member 40a as residue. The adhered residue is removed as shown in Figure 6(b). The adhered residue can be removed, for example, by peeling. The temporary fixing material layer 6c is a cured product of the temporary fixing film 1 (resin composition layer 6), and it is possible to easily peel the temporary fixing material layer from the processed semiconductor member while suppressing the generation of residue. 【0096】 The residue on the separated processed semiconductor member 40a may be removed, for example, by washing with a solvent. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used individually or in combination of two or more. To remove any adhering residue, the processed semiconductor member 40a may be immersed in the solvent or ultrasonically cleaned. The processed semiconductor member 40a may also be heated at a low temperature of approximately 100°C or below. 【0097】 By the methods exemplified above, a semiconductor element 60 comprising the processed semiconductor member 40a can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor chip or a substrate for mounting semiconductor elements. 【0098】 The present invention will be described in more detail below with reference to examples (manufacturing examples). However, the present invention is not limited to these examples (manufacturing examples). 【0099】 <Preparation of temporary fixing film> The following components were used in the preparation of the temporary fixing film. 【0100】(A) Thermoplastic resin (A-1a) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 13% by mass), used as a 25% by mass xylene solution. (A-1b) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 13% by mass), used as a 25% by mass limonene / cyclohexanone mixed solution. The limonene and cyclohexanone in the mixed solution were blended to be equal in mass (mass ratio 1:1). (A-2a) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 30% by mass), used as a 25% by mass xylene solution. (A-2b) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 30% by mass) was used as a 25% by mass limonene / cyclohexanone mixed solution. The limonene and cyclohexanone in the mixed solution were blended in equal amounts (mass ratio 1:1). 【0101】 (B) Thermosetting resins (B1-1a) Dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a 50% by mass xylene solution (B1-1b) Dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a 50% by mass cyclohexanone solution (B2-1a) Triphenylmethane type epoxy resin (1032H60, manufactured by Mitsubishi Chemical Corporation), used as a 50% by mass xylene solution (B2-1b) Triphenylmethane type epoxy resin (1032H60, manufactured by Mitsubishi Chemical Corporation), used as a 50% by mass cyclohexanone solution 【0102】 (C) Curing accelerator (C-1) Imidazole derivative (2PZ-CN, manufactured by Shikoku Chemicals Co., Ltd.), used as a 10% by mass cyclohexanone solution 【0103】(D) Antioxidant (D-1a) Hindered phenol derivative (AO-60, manufactured by ADEKA Corporation), used as a 10% by mass xylene solution (D-1b) Hindered phenol derivative (AO-60, manufactured by ADEKA Corporation), used as a 10% by mass cyclohexanone solution 【0104】 (Examples 1-6, Comparative Examples 1-2) The materials shown in Table 1 were mixed in the proportions shown in Table 1 (unit: parts by mass; the values ​​in Table 1 represent the non-volatile content) to obtain a resin composition varnish. In Examples 1-4 and Comparative Examples 1-2, xylene was used as the solvent, and in Examples 5 and 6, limonene and cyclohexanone were used as solvents, with the non-volatile content being 25% by mass relative to the total mass of the varnish. In Examples 5 and 6, equal amounts of limonene and cyclohexanone were used, with the non-volatile content being 25% by mass relative to the total mass of the varnish. The obtained resin composition varnish was coated onto the release surface of a polyethylene terephthalate (PET) film (Purex A31, manufactured by Toyobo Film Solutions Co., Ltd., thickness: 38 μm) used as a support film using a precision coating machine. In Examples 1-2 and Comparative Examples 1-2, a temporary fixing film with a thickness of 50 μm was obtained by drying the coating film by heating it at 100°C for 10 minutes. In Examples 3-6, a temporary fixing film with a thickness of 50 μm was obtained by heating the coating film at 100°C for 5 minutes, followed by drying it by heating it at 150°C for 10 minutes. 【0105】 <Evaluation of the temporary fixing layer> 【0106】1. 90° Peel Strength The temporary fixing films of the 1.90° Peel Strength Examples and Comparative Examples were pressed onto a silicon wafer using a vacuum laminator at a temperature of 80°C and a pressure of 0.5 MPa for 120 seconds. Subsequently, the support film was peeled off, and the temporary fixing material layer was formed by heating in a dryer with nitrogen purging at 200°C for 1 hour. Then, support tape (Easy Cut Tape No. 207H, manufactured by Oji Tack Co., Ltd.) was attached to the temporary fixing material layer, and the temporary fixing material layer together with the support tape was cut to a width of 1 cm to obtain a test specimen with the temporary fixing material layer. Subsequently, a peel test was performed on the test specimen at a speed of 50 mm / min using a peel test machine (EZ-S, manufactured by Shimadzu Corporation) set to a peel angle of 90°, and the 90° peel strength of the temporary fixing material layer to the silicon wafer was measured. The results are shown in Table 1. 【0107】 【0108】 As shown in Table 1, it was confirmed that the temporary fixing material layers produced from the temporary fixing films of Examples 1 to 6 exhibited reduced 90° peel strength relative to the silicon wafer. Furthermore, it was found that the 90° peel strength could be further reduced by changing the drying temperature in Examples 3 to 4, and by changing both the drying temperature and the solvent in Examples 5 to 6. 【0109】 1...Film for temporary fixing, 2...Support member, 4...Light absorbing layer, 6...Resin composition layer, 6c...Temporary fixing material layer, 10...Laminate precursor, 20...Laminate for temporary fixing, 30...Laminate, 40...Semiconductor member, 40a...Processed semiconductor member, 42...Semiconductor substrate, 42a...Thinned semiconductor substrate, 44...Redistribution layer, 50...Sealing layer, 60...Semiconductor element.

Claims

1. A temporary fixing film used for temporarily fixing a semiconductor member and a support member, comprising: (A) a hydrocarbon resin having monomer units derived from styrene; and (B) an epoxy resin, wherein the content of component (A) is 65 parts by mass or less with respect to 100 parts by mass of the total of component (A) and component (B).

2. The temporary fixing film according to claim 1, wherein component (B) comprises (B1) an epoxy resin having an alicyclic structure and (B2) an epoxy resin having an aromatic ring.

3. A temporary fixing laminate comprising, in this order, a support member, a light-absorbing layer, and a temporary fixing material layer consisting of the temporary fixing film or cured product thereof as described in claim 1.

4. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate according to claim 3; temporarily fixing a semiconductor member to a support member via the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light-absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the temporary fixing material layer in the temporary fixing laminate is made of the temporary fixing film, and the semiconductor member is placed on or pressed onto the temporary fixing material layer, and then the temporary fixing material layer is heat-cured.

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