Dual frequency pulsed plasma processing treatments
The dual RF frequency CCP processing method addresses the challenges of high resistance and copper diffusion in metal interconnects by treating barrier layers with minimal damage, enhancing the electrical and mechanical properties of deposited layers in integrated circuits.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2025-10-03
- Publication Date
- 2026-06-18
AI Technical Summary
The formation of metal interconnect structures in integrated circuit devices faces challenges due to high electrical resistance and copper diffusion, which can lead to reduced reliability and device failure, necessitating improved barrier layers with minimal contamination and resistance.
A dual RF frequency capacitively coupled plasma (CCP) processing method is employed, utilizing a first RF frequency greater than a second RF frequency, to treat and deposit barrier layers, minimizing damage to fragile dielectric layers and enhancing the properties of deposited layers.
The dual RF frequency CCP process effectively reduces electrical resistance and minimizes damage to dielectric layers, improving the reliability and quality of metal interconnect structures in integrated circuits.
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