Process chamber improvement

A multi-channel gas delivery system in process chambers addresses non-uniformity by alternating gas flow paths, mimicking substrate rotation to improve deposition uniformity and eliminate vortices, resulting in enhanced process uniformity.

WO2026128067A1 Publication Date: 2026-06-18APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2025-10-09
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

Existing process chambers experience non-uniformity in processes such as deposition due to vortices and undesirable gas flow patterns when using a rotating substrate support, despite efforts to improve uniformity through cross-flow configurations.

⚗Method used

Implementing a gas delivery system with multiple inlet and exhaust channels positioned at different angular locations around the substrate support, alternating their operation to direct gas flow paths over the substrate, mimicking the effect of substrate rotation without actual rotation.

🎯Benefits of technology

Achieves improved deposition thickness uniformity by exposing the substrate to varying concentrations of fresh precursor gas and byproducts, eliminating vortices, and enhancing overall process uniformity.

✦ Generated by Eureka AI based on patent content.

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Abstract

A processing system is provided including a process chamber that includes: a chamber body disposed around an interior volume; a substrate support in the interior volume; a gas inlet channel assembly including a first gas inlet channel and a second gas inlet channel. Each gas inlet channel is coupled with the interior volume, and each gas inlet channel is positioned at a different angular location around the substrate support. The process chamber further includes an exhaust inlet channel assembly including a first exhaust inlet channel and a second exhaust inlet channel. Each exhaust inlet channel is coupled with the interior volume. Each exhaust inlet channel is positioned at a different angular location around the substrate support. At least a portion of the first exhaust inlet channel directly underlies the first gas inlet channel. At least a portion of the second exhaust inlet channel directly underlies the second gas inlet channel.
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