Genotyping or sequencing platform with passivation layer

The use of an exposed passivation layer on genotyping and sequencing platforms addresses the issue of particle displacement by reducing electrostatic repulsion, enhancing retention and improving genotyping and sequencing performance.

WO2026128725A1 Publication Date: 2026-06-18ILLUMINA INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
ILLUMINA INC
Filing Date
2025-12-11
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

Existing genotyping and sequencing platforms face challenges in retaining functionalized particles within depressions due to electrostatic repulsion between the particles and the negatively-charged substrate, leading to potential displacement during washing cycles, which affects genotyping and sequencing metrics.

⚗Method used

Incorporation of an exposed passivation layer on the negatively-charged substrate to mitigate electrostatic repulsion between functionalized particles and the substrate, ensuring retention of particles within depressions through electrostatic attraction or suppression of negative charges, thereby improving genotyping and sequencing performance.

🎯Benefits of technology

The passivation layer enhances the retention of functionalized particles, improving genotyping and sequencing metrics by preventing displacement during washing cycles and maintaining optimal reaction conditions.

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Abstract

An example of a genotyping or sequencing platform generally includes a negatively-charged substrate including a plurality of depressions defined therein that are separated by interstitial regions. The genotyping or sequencing platform further includes an exposed passivation layer positioned over an entirety of a surface of the negatively-charged substrate, wherein the exposed passivation layer at least partially fills each depression in the plurality of depressions and at least partially overlies each interstitial region across the entirety of the surface.
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