Bonding device and bonding method

Abstract

This bonding device bonds a die to a target substrate. The bonding device includes: a substrate stage on which the target substrate is held; a first suction head for suctioning the die; and a first moving mechanism for moving the die together with the first suction head and pressing the die against the target substrate. The first suction head includes a first suction surface for suctioning the die. The first suction surface has: a protruding section that is a surface facing the substrate stage and that is the section which protrudes toward the substrate stage more than any other section; and an inclined section that becomes increasingly separated from the substrate stage the greater the distance of the inclined section from the protruding section.

Description

Bonding device and bonding method

[0001] The present disclosure relates to a bonding device and a bonding method.

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a loading / unloading unit, and a transfer unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies a plurality of chips individually. The chips are adhered to a tape that covers the opening of the frame, pushed up one by one upward, and inverted one by one upside down (paragraph

[0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device onto a substrate.

[0003] Japanese Patent No. 6337400

[0004] One embodiment of the present disclosure provides a technique for improving the bonding quality of a die to a target substrate.

[0005] A bonding device according to an embodiment of the present disclosure bonds a die to a target substrate. The bonding device includes a substrate stage that holds the target substrate, a first suction head that sucks the die, and a first movement mechanism that moves the die together with the first suction head and presses the die against the target substrate. The first suction head has a first suction surface that sucks the die. The first suction surface is a surface facing the substrate stage, and has a protruding portion that protrudes most toward the substrate stage, and an inclined portion that is spaced apart from the substrate stage as it moves away from the protruding portion.

[0006] According to one embodiment of the present disclosure, the bonding quality of a die to a target substrate can be improved.

[0007] Figure 1 is a cross-sectional view showing a bonding apparatus according to one embodiment. Figure 2 is a cross-sectional view showing an example of a target substrate before bonding the die. Figure 3 is a cross-sectional view showing an example of a target substrate after bonding the die. Figure 4(A) is a diagram showing an example of a first suction head, and Figure 4(B) is a cross-sectional view along the line B-B in Figure 4(A). Figure 5 is a cross-sectional view showing a bonding method according to one embodiment. Figure 6(A) is a diagram showing a modified example of the first suction head, and Figure 6(B) is a cross-sectional view along the line B-B in Figure 6(A). Figure 7 is a cross-sectional view showing an example of a gas discharge nozzle. Figure 8 is a cross-sectional view showing an example of the discharge timing of the second gas. Figure 9 is a perspective view showing an example of a discharge head and a suction head. Figure 10 is a cross-sectional view showing the operation of a bonding apparatus according to a modified example. Figure 11 is a cross-sectional view showing the operation of a bonding apparatus following Figure 10. Figure 12 is a cross-sectional view showing an example of a carrier before picking up the die. Figure 13 is a cross-sectional view showing an example of die transfer from the second suction head to the first suction head. Figure 14(A) shows an example of a second suction head, and Figure 14(B) is a cross-sectional view along the line B-B in Figure 14(A). Figure 15(A) shows a modified example of the second suction head, and Figure 15(B) is a cross-sectional view along the line B-B in Figure 15(A). Figure 16 is a cross-sectional view showing a modified example of die transfer from the second suction head to the first suction head. Figure 17 is a cross-sectional view showing a modified example of a pressing device.

[0008] Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components are denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] The X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the opposite direction to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the opposite direction to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the opposite direction to the positive Z-axis direction. The positive Z-axis direction is upward, and the negative Z-axis direction is downward.

[0010] Referring to Figures 1 to 3, a bonding apparatus 1 according to one embodiment will be described. The bonding apparatus 1 bonds the die D and the target substrate W with the bonding surface Da of the die D facing the bonding surface Wa of the target substrate W. For example, the bonding apparatus 1 repeatedly bonds the die D and the target substrate W, bonding multiple dies D to the target substrate W one by one in sequence.

[0011] As shown in Figure 2, the target substrate W has a semiconductor substrate W1 such as a silicon wafer and a plurality of devices W2 formed on the semiconductor substrate W1. In this embodiment, the semiconductor substrate W1 is a silicon wafer, but it may be a compound semiconductor wafer. A glass substrate may be used instead of the semiconductor substrate W1. The target substrate W has a bonding surface Wa and a non-bonding surface facing the opposite direction from the bonding surface Wa. The bonding surface Wa and non-bonding surface of the target substrate W are circular, but may be square. The target substrate W has a plurality of devices W2 on the bonding surface Wa. The plurality of devices W2 are separated by a plurality of streets that are orthogonal to each other. Each device W2 includes an electronic circuit. As shown in Figure 3, a die D is electrically connected to each device W2. Then, the target substrate W is cut along the streets to separate each device W2 into individual pieces to obtain a semiconductor device. The semiconductor device includes the devices W2 and the die D.

[0012] Die D is a semiconductor substrate on which multiple devices, separate from device W2, are formed, and each device is separated into individual pieces. A glass substrate may be used instead of a semiconductor substrate. As shown in Figure 1, die D has a bonding surface Da and a non-bonding surface Db facing the opposite direction from bonding surface Da. The non-bonding surface Db of die D does not need to be a surface that is not bonded to the target substrate W, and may be bonded to another die (not shown). Die D has a device on bonding surface Da. The electronic circuit of the device on die D and the electronic circuit of device W2 on the target substrate W are electrically connected. The type and number of dies D electrically connected to a single device W2 are not particularly limited. Although not shown, multiple dies D may be electrically connected to a single device W2.

[0013] As shown in Figure 1, the bonding apparatus 1 includes a substrate stage 10. The substrate stage 10 holds the target substrate W. For example, the substrate stage 10 holds the target substrate W from below with the bonding surface Wa of the target substrate W facing upwards. The substrate stage 10 is, for example, a vacuum suction chuck. The substrate stage 10 may also have an inverted structure and hold the target substrate W from above. Alternatively, the substrate stage 10 may have a vertically oriented structure and hold the target substrate W in a vertically oriented position.

[0014] The bonding apparatus 1 includes a mounting apparatus 20. The mounting apparatus 20 mounts the die D onto the target substrate W held by the substrate stage 10. The mounting apparatus 20 may have a structure corresponding to the structure of the substrate stage 10. The mounting apparatus 20 may have an inverted structure. The mounting apparatus 20 may also have a vertically oriented structure.

[0015] The mounting device 20 has a first suction head 21. The first suction head 21 adsorbs the die D. The first suction head 21 adsorbs the non-joint surface Db of the die D, which is opposite to the joint surface Da. Since it is not a problem if the non-joint surface Db is dirty, the first suction head 21 may come into contact with the die D. This can improve the suction force and suppress misalignment. The first suction head 21 adsorbs the die D, for example, by vacuum adsorption.

[0016] The mounting device 20 has a first moving mechanism 29. The first moving mechanism 29 moves the die D together with the first suction head 21 and presses the die D against the target substrate W. The first moving mechanism 29 joins the die D to the target substrate W by moving the first suction head 21 in the Z-axis direction. To improve the accuracy of the joining position, the first moving mechanism 29 may move the first suction head 21 in the X-axis and Y-axis directions, or rotate the first suction head 21 around the vertical axis. The amount of movement or rotation required to improve the accuracy of the joining position is small, and when viewed from above, the first suction head 21 hardly moves at all. The first moving mechanism 29 has, for example, a motor for each direction of movement.

[0017] The bonding device 1 may include a second moving mechanism 19. The second moving mechanism 19 moves the substrate stage 10. The second moving mechanism 19 moves the substrate stage 10 in the X-axis and Y-axis directions to change the bonding position of the die D on the target substrate W. If the mounting device 20 does not move in the X-axis and Y-axis directions, the operation of the mounting device 20 can be simplified. The second moving mechanism 19 may also move the substrate stage 10 in the Z-axis direction. The second moving mechanism 19 may have, for example, a motor for each direction of movement.

[0018] The bonding apparatus 1 may include at least one of a first imaging device 81, a second imaging device 82, and a third imaging device 83 in order to improve the accuracy of the bonding position of the die D to the target substrate W. The first imaging device 81, the second imaging device 82, and the third imaging device 83 do not need to capture an image each time the die D and the target substrate W are bonded, but may capture an image periodically.

[0019] The first imaging device 81 images the alignment marks on the bonding surface Da of the die D held by the first suction head 21. The number of alignment marks to be imaged is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the die D.

[0020] The first imaging device 81 is positioned, for example, below the first suction head 21. The first imaging device 81 transmits the captured image to the control circuit 90. The control circuit 90 processes the image captured by the first imaging device 81 to detect the position of the die D in the first coordinate system set for the first suction head 21.

[0021] The second imaging device 82 images the alignment marks on the bonding surface Wa of the target substrate W held by the substrate stage 10. The number of alignment marks to be imaged is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the device W2 on the target substrate W.

[0022] The second imaging device 82 is positioned, for example, above the substrate stage 10 and is provided, for example, on the first suction head 21. The second imaging device 82 transmits the captured image to the control circuit 90. The control circuit 90 processes the image captured by the second imaging device 82 to detect the position of the device W2 in a second coordinate system set on the substrate stage 10.

[0023] The control circuit 90 uses images captured by at least one of the first imaging device 81 and the second imaging device 82 to align the die D held by the first suction head 21 with the device W2 on the target substrate W held by the substrate stage 10. This alignment is performed by controlling at least one of the first moving mechanism 29 and the second moving mechanism 19. The position of the die D or the device W2 can be corrected before bonding the die D and the target substrate W, thereby improving the accuracy of the bonding position.

[0024] The third imaging device 83 simultaneously images both the alignment mark on the bonding surface Da of the die D and the alignment mark on the bonding surface Wa of the target substrate W after the die D and the device W2 have been bonded. The third imaging device 83, for example, transmits images through the die D to image the alignment marks of the die D and the target substrate W. The third imaging device 83 is composed of, for example, an infrared camera.

[0025] The third imaging device 83, when imaging the alignment marks between the die D and the target substrate W by passing through the die D, is positioned, for example, above the substrate stage 10 and is provided, for example, on the first suction head 21. The third imaging device 83 transmits the captured image to the control circuit 90. The control circuit 90 detects the difference between the actual bonding position and the target bonding position by processing the image captured by the third imaging device 83.

[0026] The control circuit 90 uses the image captured by the third imaging device 83 to align the die D, held by the first suction head 21, with the target substrate W, held by the substrate stage 10, during subsequent bonding operations between the die D and the target substrate W. The position of the die D or target substrate W can be corrected considering the characteristics of the bonding device 1, thereby improving the accuracy of the bonding position.

[0027] The bonding device 1 includes a control circuit 90. The control circuit 90 is, for example, a computer. The control circuit 90 includes, for example, an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs that control various processes executed in the bonding device 1. The control circuit 90 controls the operation of the bonding device 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A lower-level control circuit is provided for each device that constitutes the bonding device 1 to control the operation of the device, and a higher-level control circuit may be provided to comprehensively control multiple lower-level control circuits. The control circuit 90 may be composed of multiple lower-level control circuits and a higher-level control circuit.

[0028] The control circuit 90 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 90 performs various control operations described in this specification by executing instruction codes stored in a storage medium such as memory, or by being circuit-designed for special applications.

[0029] The bonding device 1 comprises a housing 31. The housing 31 houses the substrate stage 10 and the mounting device 20 inside. The housing 31 has an input / output 32 on its side wall. The input / output 32 is used to load and unload the target substrate W. As shown in Figure 10, the housing 31 may also house a carrier stage 50 and a pickup device 60, which will be described later. The input / output 32 may also be used to load and unload a carrier E, which will be described later.

[0030] The bonding device 1 includes a first gas supply unit 33. The first gas supply unit 33 supplies a first gas from the outside to the inside of the housing 31. The first gas is, for example, air. The first gas supply unit 33 includes, for example, an air supply fan. The air supply fan is mounted, for example, on the ceiling of the housing 31, but may also be mounted on the side wall of the housing 31. In addition to the air supply fan, the first gas supply unit 33 may include a filter. The filter collects particles.

[0031] The housing 31 has an exhaust port 34. The exhaust port 34 discharges a first gas from the inside of the housing 31 to the outside. In addition to the first gas, the exhaust port 34 may also discharge a second gas or a third gas, which will be described later. The exhaust port 34 is formed, for example, in the bottom wall of the housing 31, but it may also be formed in the side wall of the housing 31. The exhaust port 34 is preferably formed in a position facing the air supply fan. A first gas exhauster 35 is attached to the exhaust port 34. The first gas exhauster 35 includes a duct or an exhaust fan.

[0032] An example of the first suction head 21 will be described with reference to Figures 4 and 5. The first suction head 21 has a first suction surface 22. The first suction surface 22 is the surface facing the substrate stage 10 (for example, the bottom surface) and has a protruding portion 23 and an inclined portion 24. The protruding portion 23 protrudes the most toward the substrate stage 10 (for example, toward downward). The inclined portion 24 moves further away from the substrate stage 10 as it moves away from the protruding portion 23. For example, the inclined portion 24 is inclined upward (positive Z-axis direction) as it moves away from the protruding portion 23 in the horizontal direction (for example, positive X-axis and negative X-axis direction).

[0033] As shown in Figure 5, the protrusion 23 begins to press the die D against the target substrate W, and the bonding of the die D and the target substrate W begins. At the start of bonding, a wedge-shaped gap G is formed between the die D and the target substrate W. The wedge-shaped gap G is formed along the inclined portion 24. For example, the wedge-shaped gap G widens vertically as it moves away from the protrusion 23 in the horizontal direction (e.g., in the positive and negative X-axis directions).

[0034] Hereinafter, the region where the die D and the target substrate W are joined will be referred to as the bonding region. In the bonding region, a bonding force acts between the die D and the target substrate W. This bonding force is generated, for example, by hydrogen bonding between OH groups. OH groups are formed, for example, by activating and hydrophilizing the bonding surfaces Da and Wa before bonding. Activation includes plasma irradiation, and hydrophilization includes the supply of water or water vapor. The bonding force may also include van der Waals forces. In this embodiment, the bonding method between the die D and the target substrate W is surface activated bonding (SAB), but atomic diffusion bonding (ADB) may also be used.

[0035] A bonding force is generated in the bonding region, and this force gradually closes the wedge-shaped gap G, causing the bonding region to gradually expand. Bonding is completed when the bonding region expands to cover the entire bonding surface Da of the die D. By pressing only a portion of the bonding surface Da of the die D against the target substrate W and then gradually expanding the bonding region, the inclusion of air bubbles can be suppressed and bonding quality can be improved compared to pressing the entire bonding surface Da of the die D against the target substrate W simultaneously.

[0036] In this embodiment, there are two inclined portions 24, as will be described later, but there may be one or three or more. For example, four inclined portions 24 may form a square pyramidal surface, and protrusions 23 may be formed at the vertices of the square pyramidal surface. Alternatively, one inclined portion 24 may form an inclined surface, and protrusions 23 may be formed at the lower edge of the inclined surface. In any case, bubble trapping can be suppressed.

[0037] As shown in Figures 4(A) and 4(B), the first suction surface 22 preferably has a projection 23 on a line segment L1 passing through the center 22C of the first suction surface 22, and a pair of inclined portions 24 symmetrically on either side of the projection 23. The plane of symmetry is a plane perpendicular to the bonding surface Wa of the target substrate W held by the substrate stage 10, and is a plane containing the line segment L1. The die D can be deformed symmetrically on either side of the line segment L1. Furthermore, the bonding region can be expanded symmetrically with respect to the line segment L1.

[0038] In this embodiment, the protrusion 23 is provided in a linear shape, but it may also be provided as a point. When the protrusion 23 is provided as a point, the inclined portion 24 may be provided in a hemispherical, conical, or pyramidal shape, for example. When the protrusion 23 is provided as a point, the die D is deformed radially around the protrusion 23. As a result, wrinkles may occur in the die D. In this embodiment, the die D can be deformed symmetrically across the line segment L1, so the occurrence of wrinkles can be suppressed.

[0039] The first suction surface 22 is preferably rectangular when viewed from the substrate stage 10 (for example, from below). This is because the non-bonding surface Db of the die D is often rectangular. A rectangle includes a square. The first suction surface 22 and the non-bonding surface Db of the die D may be the same size or may be different sizes. The first suction surface 22 may be smaller or larger than the non-bonding surface Db of the die D.

[0040] The first adsorption surface 22 is preferably rectangular when viewed from the substrate stage 10, and has a projection 23 on a line segment L1 connecting the midpoints of each of the pair of sides of the rectangle, and has a pair of inclined portions 24 symmetrically on either side of the projection 23. The bonding surface Da of the die D is often rectangular, and bonding between the die D and the target substrate W can be started at a position that bisects the bonding surface Da of the die D.

[0041] The pair of inclined portions 24 preferably have a curved shape. For example, the pair of inclined portions 24 have a shape in which a part of a cylindrical surface or an elliptical surface has been cut off. The die D can be smoothly curved along the pair of inclined portions 24.

[0042] The pair of inclined portions 24 may also have a planar shape. Even if the pair of inclined portions 24 have a planar shape, the non-jointed surface Db of the die D is deformed into a curved shape corresponding to the bending rigidity of the die D. As a result, a gap may be created between the die D and the inclined portions 24.

[0043] Incidentally, as shown in FIGS. 6(A) and 6(B), the first adsorption surface 22 is rectangular when viewed from the substrate stage 10, has a protrusion 23 on a line segment L1 which is a diagonal of the rectangle, and may have a pair of inclined portions 24 that are symmetric with respect to each other across the protrusion 23. The bonding surface Da of the die D is often rectangular, and bonding of the die D and the target substrate W can be started at a position bisecting the bonding surface Da of the die D.

[0044] As shown in FIGS. 4(A) and 6(A), the first adsorption surface 22 preferably has a plurality of suction holes 25 along the periphery of the first adsorption surface 22. When the suction mechanism 26 sucks gas from each suction hole 25, a suction pressure is generated in each suction hole 25. If the plurality of suction holes 25 are formed along the periphery of the first adsorption surface 22, the die D can be bent and deformed along the entire first adsorption surface 22.

[0045] In each suction hole 25, the die D can be locally deformed by the suction pressure. Therefore, each suction hole 25 is preferably provided so as to avoid the protrusion 23. When the first adsorption surface 22 is rectangular when viewed from the substrate stage 10 as shown in FIG. 4(A) and has a protrusion 23 on a line segment L1 connecting the midpoints of each of the pair of sides of the rectangle, the distance from the line segment L1 to each suction hole 25 is preferably 25% or more of the length of each of the pair of sides. When the first adsorption surface 22 is rectangular when viewed from the substrate stage 10 as shown in FIG. 6(A) and has a protrusion 23 on a line segment L1 which is a diagonal of the rectangle, the distance from the line segment L1 to each suction hole 25 is preferably 25% or more of the length of the diagonal. It is possible to suppress the start of pressing of the die D against the target substrate W at a position where the die D is locally deformed, and reduce the distortion of the die D remaining after bonding.

[0046] As shown in FIGS. 4(B) and 6(B), the suction mechanism 26 sucks gas from each suction hole 25. The suction mechanism 26 has a suction line. The suction line forms a gas flow path. The suction mechanism 26 has, for example, an opening / closing valve and a pressure controller in the middle of the suction line. The opening / closing valve opens and closes the gas flow path under the control of the control circuit 90. The pressure controller controls the gas pressure under the control of the control circuit 90.

[0047] As shown in FIG. 5, it is preferable that the control circuit 90 performs the following controls (A) to (C) in this order. (A) The first suction head 21 vacuum-sucks the die D. (B) The first moving mechanism 29 approaches the die D to the target substrate W together with the first suction head 21. (C) Simultaneously with or immediately after the start of pressing the die D against the target substrate W, the first suction head 21 releases the vacuum suction of the die D.

[0048] (C) By releasing the vacuum suction of the die D by the first suction head 21 simultaneously with or immediately after the start of pressing the die D against the target substrate W, the local deformation of the die D due to the suction pressure is released, and the bonding area can be expanded. Therefore, the distortion of the die D remaining after bonding can be reduced. It is preferable that the release of the vacuum suction of the die D by the first suction head 21 is within 0.5 seconds from the start of pressing the die D against the target substrate W.

[0049] Referring to FIGS. 7 and 8, an example of the gas discharge nozzle 30 will be described. The bonding apparatus 1 preferably includes the gas discharge nozzle 30. The gas discharge nozzle 30 is provided inside the housing 31 shown in FIG. 1 or FIG. 10. The inside of the housing 31 is mainly filled with the first gas. The first gas is, for example, air. Air usually contains water vapor. The first gas is pre-cleaned with a filter or the like.

[0050] The gas discharge nozzle 30 discharges a second gas having a water vapor concentration different from that of the first gas pre-existing in the gap G toward the gap G formed between the die D and the target substrate W immediately before the start of pressing the die D against the target substrate W. The second gas has a lower water vapor concentration than the first gas in the present embodiment, but may have a higher water vapor concentration. The water vapor concentration is represented by, for example, relative humidity or absolute humidity.

[0051] The lower the water vapor concentration in the gap G, the lower the OH group concentration on the bonding surfaces Da and Wa, and the smaller the bonding force acting between the die D and the target substrate W. The smaller the bonding force, the slower the expansion rate of the bonding area.

[0052] The gas discharge nozzle 30 can control the water vapor concentration in the gap G by replacing the first gas already present in the gap G with the second gas. As a result, the OH group concentration on the bonding surfaces Da and Wa can be controlled, and the bonding force acting between the die D and the target substrate W can be controlled. Therefore, the expansion rate of the bonding region can be controlled, the inclusion of air bubbles can be suppressed, and the bonding quality can be improved.

[0053] The joining device 1 includes a second gas supply unit 36. The second gas supply unit 36 ​​supplies a second gas to the gas discharge nozzle 30. The second gas is, for example, nitrogen gas or a noble gas. Nitrogen gas and noble gases have a lower water vapor concentration than air. Alternatively, the first gas may be air, and the second gas may be air with a different water vapor concentration than the first gas (for example, dry air).

[0054] The second gas supplier 36 has a supply line. The supply line forms a flow path for the second gas. The second gas supplier 36 has, for example, an on / off valve and a flow controller in the middle of the supply line. The on / off valve opens and closes the flow path for the second gas under the control of the control circuit 90. The flow controller controls the flow rate of the second gas under the control of the control circuit 90.

[0055] The second gas supply unit 36 ​​may include a dehumidifier or humidifier to adjust the water vapor concentration of the second gas. The second gas supply unit 36 ​​may include a cooler or heater to adjust the temperature of the second gas. The second gas supply unit 36 ​​may include a filter to collect particles.

[0056] Preferably, the control circuit 90 switches between discharging or not discharging the second gas, or switching the flow rate or water vapor concentration of the second gas, depending on the thickness of the die D. The information on the thickness of the die D is read from a memory unit 92 that has been stored in advance. The thickness of the die D varies depending on the function of the die D (e.g., electronic circuit) or application. The greater the thickness of the die D, the greater the bending rigidity of the die D.

[0057] If the shape and dimensions of the first suction surface 22 are the same, the greater the bending rigidity of the die D, the greater the elastic restoring force of the die D, and therefore the faster the expansion rate of the bonding area. In order to keep the expansion rate of the bonding area within a certain range (a range in which air bubble entrapment can be suppressed), it is conceivable to prepare multiple first suction heads 21 with different shapes or dimensions of the first suction surface 22 and switch the first suction head 21 used according to the thickness of the die D. However, the switching operation is complicated.

[0058] The control circuit 90 can control the water vapor concentration in the gap G by switching the discharge of the second gas or the flow rate or water vapor concentration of the second gas according to the thickness of the die D. If the water vapor concentration in the gap G is controlled to be lower as the thickness of the die D increases, the expansion rate of the bonding area can be kept within a certain range (a range in which bubble entrapment can be suppressed) without having to switch the first adsorption head 21 used according to the thickness of the die D.

[0059] The first moving mechanism 29 (see Figure 1) preferably moves the gas discharge nozzle 30 together with the first suction head 21. When the bonding device 1 repeatedly bonds the die D and the target substrate W, even if the bonding position of the die D on the target substrate W changes, the gas discharge nozzle 30 can discharge the second gas at the same angle and distance to the gap G each time. Therefore, the bonding quality can be stabilized.

[0060] The gas discharge nozzle 30 may be fixed to the first suction head 21 so as to move together with the first suction head 21. However, the bonding device 1 may have an adjustment mechanism (not shown) for adjusting the angle or position of the gas discharge nozzle 30 relative to the first suction head 21. The adjustment mechanism has a motor or a drive shaft. The angle or position of the gas discharge nozzle 30 can be adjusted according to the thickness of the die D.

[0061] Preferably, the gas discharge nozzles 30 are provided in pairs, flanking the linear projection 23 when viewed from the substrate stage 10 (for example, when viewed from below). This allows the second gas to be supplied to both of the pair of wedge-shaped gaps G formed flanking the projection 23 at the start of bonding. The number of gas discharge nozzles 30 may be one or three or more. If there is only one gas discharge nozzle 30, it may be provided, for example, on the extension of the linear projection 23 when viewed from below, and discharge the second gas toward the projection 23.

[0062] As shown in Figure 8, the first moving mechanism 29 moves the first suction head 21 closer to the substrate stage 10, and when the first suction head 21 reaches the desired position, the gas discharge nozzle 30 starts discharging the second gas. Subsequently, the first moving mechanism 29 further lowers the first suction head 21 and starts pressing the die D against the target substrate W. Discharge of the second gas supply begins before pressing begins. These operations are performed under the control of the control circuit 90.

[0063] It is preferable that the control circuit 90 continues to discharge the second gas until the bonding area expands to cover at least the entire bonding surface Da of the die D (i.e., until bonding is complete). The control circuit 90 may terminate the discharge of the second gas simultaneously with the completion of bonding, or it may terminate after a set time has elapsed since the completion of bonding. Alternatively, the control circuit 90 may terminate the discharge of the second gas after the die D is released from its contact with the target substrate W, that is, after the first suction head 21 begins to rise.

[0064] Although not shown in the figures, the bonding apparatus 1 may be equipped with a gas suction nozzle. The gas suction nozzle sucks in the second gas discharged by the gas discharge nozzle 30. The range in which the first gas is replaced by the second gas can be limited. Therefore, the time that the bonding surface Wa of the device W2 is exposed to the second gas before bonding with the die D can be made uniform for multiple devices W2, and the bonding quality can be made uniform. It is also possible to individually adjust the time that the bonding surface Wa of the device W2 is exposed to the second gas before bonding with the die D for each device W2.

[0065] An example of a discharge head 41 will be described with reference to Figure 9. The bonding apparatus 1 preferably includes a discharge head 41. The discharge head 41 discharges a third gas along the holding surface 10a of the target substrate W on the substrate stage 10, or along the bonding surface Wa of the target substrate W held by the substrate stage 10. The third gas is, for example, air. The third gas is pre-purified by a filter or the like.

[0066] As shown in Figure 9, with the substrate stage 10 holding the target substrate W, the discharge head 41 discharges the third gas along the bonding surface Wa of the target substrate W. Alternatively, although not shown, with the holding surface 10a of the substrate stage 10 exposed, the discharge head 41 discharges the third gas along the holding surface 10a of the substrate stage 10.

[0067] A protective layer can be formed by the flow of a third gas to protect the holding surface 10a of the substrate stage 10 or the bonding surface Wa of the target substrate W. This suppresses particle adhesion and improves bonding quality. Particles are generated, for example, by the operation of the mounting device 20 shown in Figure 1 or by the movement of the substrate stage 10. This is particularly effective when the particle-generating component is located above the substrate stage 10.

[0068] The discharge head 41 may include a box. Inside the box, a component is provided that forms the discharge port for the third gas. This component may include, for example, perforated metal or a porous material. A rectifier plate may also be provided inside the box. The rectifier plate regulates the flow of the third gas. A filter may also be provided inside the box. The filter collects particles. The filter may be provided outside the discharge head 41.

[0069] The bonding apparatus 1 preferably includes a base 11. A substrate stage 10 and a discharge head 41 are mounted on the base 11. The discharge head 41 can be positioned near the substrate stage 10, allowing for efficient formation of a third gas flow on the holding surface 10a of the substrate stage 10 or the bonding surface Wa of the target substrate W.

[0070] The second moving mechanism 19 preferably moves the substrate stage 10 and the discharge head 41 together with the base 11. Even when the substrate stage 10 moves, the relative position of the discharge head 41 with respect to the substrate stage 10 does not change, so the holding surface 10a of the substrate stage 10 or the bonding surface Wa of the target substrate W can be protected by the third gas layer.

[0071] The bonding apparatus 1 includes a third gas supply unit 42. The third gas supply unit 42 supplies a third gas to the discharge head 41. The third gas is, for example, air. Preferably, the third gas has an appropriate water vapor concentration so that the bonding surface Wa of the target substrate W does not dry out too much, that is, so that the OH group concentration on the bonding surface Wa does not decrease too much. Preferably, the third gas has a water vapor concentration similar to that of the first gas.

[0072] The third gas supplier 42 has a supply line. The supply line forms a flow path for the third gas. The third gas supplier 42 has, for example, an on / off valve and a flow controller in the middle of the supply line. The on / off valve opens and closes the flow path for the third gas under the control of the control circuit 90. The flow controller controls the flow rate of the third gas under the control of the control circuit 90.

[0073] The third gas supply unit 42 may include a dehumidifier or humidifier to adjust the water vapor concentration of the third gas. The third gas supply unit 42 may include a cooler or heater to adjust the temperature of the third gas. The third gas supply unit 42 may include a filter to collect particles.

[0074] The bonding device 1 preferably includes a suction head 43. The suction head 43 is attached to the base 11 and sucks in the third gas discharged by the discharge head 41. The discharge head 41 and the suction head 43 are positioned opposite each other with the substrate stage 10 in between. The area in which the third gas flows can be limited to the holding surface 10a of the substrate stage 10 or the bonding surface Wa of the target substrate W. Collisions between the third gas and surrounding components can be suppressed, and scattering of particles from surrounding components can be suppressed.

[0075] The suction head 43 may include a box. Inside the box, a member is provided that forms a suction port for the third gas. This member may include, for example, perforated metal or a porous material. A suction mechanism 44 is connected to the suction head 43.

[0076] The suction mechanism 44 has a suction line. The suction line forms a flow path for the third gas. The suction mechanism 44 has, for example, an on / off valve and a pressure controller in the middle of the suction line. The on / off valve opens and closes the flow path for the third gas under the control of the control circuit 90. The pressure controller controls the pressure of the third gas under the control of the control circuit 90. As a suction source, for example, an ejector or a vacuum pump can be used. The suction source does not have to be part of the joining device 1, but may be part of the factory equipment.

[0077] It is preferable that the discharge head 41 and the suction head 43 form a laminar flow of the third gas with a width wider than the diameter of the bonding surface Wa of the target substrate W. This allows the entire bonding surface Wa of the target substrate W to be protected by a layer of the third gas. The discharge head 41 and the suction head 43 are provided in a direction perpendicular to the discharge direction of the third gas and are longer than the diameter of the bonding surface Wa of the target substrate W.

[0078] It is more preferable that the discharge head 41 and the suction head 43 form a laminar flow of the third gas with a width wider than the diameter of the holding surface 10a of the substrate stage 10. This allows the entire holding surface 10a of the substrate stage 10 to be protected by a layer of the third gas. The discharge head 41 and the suction head 43 are provided in a direction perpendicular to the discharge direction of the third gas and are longer than the diameter of the holding surface 10a of the substrate stage 10.

[0079] In this embodiment, the discharge head 41 and the suction head 43 are provided straight in a direction perpendicular to the discharge direction of the third gas, but they may also be provided in a curved shape. For example, the discharge head 41 and the suction head 43 may be provided curved along the periphery of the target substrate W or the periphery of the substrate stage 10. In this embodiment, the periphery of the target substrate W and the periphery of the substrate stage 10 are circular, but they may also be rectangular.

[0080] The second moving mechanism 19 preferably moves the discharge head 41 and the suction head 43 together with the substrate stage 10. Even if the substrate stage 10 moves, the relative positions of the discharge head 41 and the suction head 43 with respect to the substrate stage 10 do not change, so the range in which the third gas flows can be limited to the holding surface 10a of the substrate stage 10 or the bonding surface Wa of the target substrate W.

[0081] The bonding apparatus 1 may include a discharge head 41 and a suction head 43 as shown in Figure 9, and a gas discharge nozzle 30 as shown in Figure 8. In this case, the gas discharge nozzle 30 discharges a second gas with a different water vapor concentration from the third gas already present in the gap G towards the gap G formed between the die D and the target substrate W immediately before the start of pressing the die D against the target substrate W. In this embodiment, the second gas has a lower water vapor concentration than the third gas, but it may have a higher water vapor concentration. The water vapor concentration is expressed, for example, as relative humidity or absolute humidity.

[0082] The lower the water vapor concentration in the gap G, the lower the OH group concentration at the bonding surfaces Da and Wa, and the weaker the bonding force acting between the die D and the target substrate W. The weaker the bonding force, the slower the expansion rate of the bonding region. By replacing the third gas already present in the gap G with the second gas, the water vapor concentration in the gap G can be controlled. As a result, the OH group concentration at the bonding surfaces Da and Wa can be controlled, and the bonding force acting between the die D and the target substrate W can be controlled. Therefore, the expansion rate of the bonding region can be controlled, and the inclusion of air bubbles can be suppressed.

[0083] The control circuit 90 may control the discharge head 41 to stop discharging the third gas while the gas discharge nozzle 30 is discharging the second gas. This allows for efficient replacement of the third gas already present in the gap G with the second gas. The discharge head 41 may continue discharging the third gas except while the gas discharge nozzle 30 is discharging the second gas. The discharge head 41 may also discharge the third gas intermittently.

[0084] The control circuit 90 may operate the suction head 43 in conjunction with the discharge head 41. While the discharge head 41 is discharging the third gas, the suction head 43 may draw in the third gas. Also, while the discharge head 41 stops discharging the third gas, the suction head 43 may stop drawing in the third gas.

[0085] A modified bonding apparatus 1 will be described, mainly with reference to Figures 10 to 11. The differences from the bonding apparatus 1 shown in Figure 1 will be mainly described below. The bonding apparatus 1 picks up a die D from a carrier E and bonds the die D to the target substrate W by facing the bonding surface Da of the picked-up die D toward the bonding surface Wa of the target substrate W. For example, the bonding apparatus 1 picks up multiple dies D one by one from the carrier E in sequence and bonds them to the target substrate W.

[0086] As shown in Figure 12, the carrier E holds multiple dies D. The carrier E holds each die D with its bonding surface Da facing upward. This allows for activation and hydrophilization of the bonding surface Da of each die D. The carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of the carrier substrate E1 facing the die D.

[0087] Carrier E holds multiple dies D on the resin film E2. Carrier E holds the dies D by electrostatic adsorption, for example. By pressing the dies D against the resin film E2, the resin film E2 can be deformed to allow gas to escape from between the dies D and the resin film E2, making it possible to vacuum-adsorb the dies D to the resin film E2. Carrier C may also adsorb the dies D by intermolecular forces.

[0088] The carrier substrate E1 may be conductive or insulating. A first through-hole E3 is formed in the carrier substrate E1, penetrating through the substrate in the thickness direction. The die D can be detached from the carrier E by supplying gas to the first through-hole E3 or by inserting a pin (not shown) into the first through-hole E3. The number and arrangement of the first through-holes E3 are not particularly limited. One or more first through-holes E3 may be formed for each die D.

[0089] The resin film E2 is preferably composed of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability when modifying the bonding surface Da of the die D, the resin film E2 is preferably composed of, for example, polyimide or EVA (ethylene vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. In this embodiment, the resin film E2 is a single layer, but it may be a multi-layer structure. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.

[0090] The bonding apparatus 1 includes a carrier stage 50. The carrier stage 50 holds the carrier E. For example, the carrier stage 50 holds the carrier substrate E1 from below with the resin film E2 of the carrier E facing upwards. The carrier stage 50 is, for example, a vacuum suction chuck. The carrier stage 50 may also have an inverted structure, with the resin film E2 of the carrier E facing downwards and the carrier substrate E1 held from above. Alternatively, the carrier stage 50 may have a vertically oriented structure, holding the carrier E in a vertical position.

[0091] The joining device 1 includes a pickup device 60. The pickup device 60 picks up the die D from the carrier E held by the carrier stage 50. The pickup device 60 may have a structure corresponding to the structure of the carrier stage 50. The pickup device 60 may have an inverted structure. The pickup device 60 may also have a vertically standing structure.

[0092] The pickup device 60 may transport the die D. The pickup device 60 may also invert the die D during transport so that the bonding surface Da of the die D faces downward. The mounting device 20 receives the die D from the pickup device 60 and mounts the received die D onto the target substrate W held by the substrate stage 10.

[0093] The pickup device 60 has a second suction head 61. The second suction head 61 adsorbs the bonding surface Da of the die D. The second suction head 61 may be in contact with the bonding surface Da of the die D, for example, by vacuum adsorption of the die D. Alternatively, the second suction head 61 may adsorb the die D without contact so as not to contaminate the bonding surface Da of the die D.

[0094] For example, the second suction head 61 has a suction nozzle (not shown) and an injection nozzle on the surface facing the die D (e.g., the bottom surface). The suction nozzle draws in gas, and the injection nozzle injects gas. The second suction head 61 can non-contact adsorb the die D using the gas injection pressure (positive pressure) and the gas suction pressure (negative pressure). The adsorption method is not particularly limited. Examples of non-contact adsorption methods include the Bernoulli method or the ultrasonic method.

[0095] The pickup device 60 has a third moving mechanism 69. The third moving mechanism 69 moves the die D together with the second suction head 61. The movement directions include the X-axis direction and the Z-axis direction. The movement directions may also include the Y-axis direction. The third moving mechanism 69 may also invert the die D vertically together with the second suction head 61. The bonding surface Da of the die D can be inverted vertically. The third moving mechanism 69 has, for example, a motor for each movement direction.

[0096] An example of the second suction head 61 will be described with reference to Figures 13 and 14. As shown in Figure 13, the control circuit 90 controls the transfer of the die D from the second suction head 61 to the first suction head 21. The roles of the first suction head 21 and the second suction head 61 can be divided. For example, while the first suction head 21 presses one die D onto the target substrate W, the second suction head 61 can pick up another die D from the carrier E. Thus, the processing speed can be improved.

[0097] The second suction head 61 has a second suction surface 62. The second suction surface 62 is the surface facing the first suction surface 22 and may have a shape that is an inversion of the first suction surface 22. For example, as shown in Figure 14, the second suction surface 62 has a valley portion 63 and an inclined portion 64. The valley portion 63 is recessed along the protruding portion 23. The inclined portion 64 is inclined along the inclined portion 24.

[0098] Since the second suction surface 62 has a shape that is an inversion of the first suction surface 22, both the first suction surface 22 and the second suction surface 62 can adsorb the die D when the die D is transferred. Therefore, displacement or dropping of the die D can be prevented when the die D is transferred, and the transfer of the die D can be performed stably.

[0099] As shown in Figures 14(A) and 14(B), the second suction surface 62 preferably has a valley 63 on a line segment L2 passing through the center 62C of the second suction surface 62, and a pair of inclined portions 64 symmetrically on either side of the valley 63. When the die D is delivered, the plane of symmetry of the second suction surface 62 and the plane of symmetry of the first suction surface 22 lie on the same plane including the line segment L2. The die D can be deformed symmetrically on either side of the line segment L2.

[0100] In this embodiment, the valley portion 63 is provided in a linear shape, but it may also be provided as a point. When the valley portion 63 is provided as a point, the inclined portion 64 is provided in a shape such as a hemisphere, cone, or square pyramid. When the valley portion 63 is provided as a point, the die D is deformed radially around the valley portion 63. As a result, wrinkles may occur in the die D. In this embodiment, the die D can be deformed symmetrically across the line segment L2, so the occurrence of wrinkles can be suppressed.

[0101] The second suction surface 62 is preferably rectangular when viewed from the first suction head 21 (for example, from above). This is because the bonding surface Da of the die D is often rectangular. A rectangle includes a square. The second suction surface 62 and the bonding surface Da of the die D may be the same size or may be different sizes. The second suction surface 62 may be smaller or larger than the bonding surface Da of the die D.

[0102] The second suction surface 62 is preferably rectangular when viewed from the first suction head 21, and has a valley 63 on a line segment L2 connecting the midpoints of each of the pair of sides of the rectangle, and has a pair of inclined portions 64 symmetrically on either side of the valley 63. The joining surface Da of the die D is often rectangular, and the valley 63 (and thus the protruding portion 23) can be positioned at a location that bisects the joining surface Da of the die D.

[0103] The pair of inclined portions 64 preferably have a curved shape. For example, the pair of inclined portions 64 have a shape in which a part of a cylindrical surface or an elliptical surface has been cut off. The die D can be smoothly curved along the pair of inclined portions 64.

[0104] The pair of inclined portions 64 may also have a planar shape. Even if the pair of inclined portions 64 have a planar shape, the joining surface Da of the die D is deformed into a curved shape corresponding to the bending rigidity of the die D. As a result, a gap may be created between the die D and the inclined portions 64.

[0105] Although not shown in the figures, the second suction surface 62 may be rectangular when viewed from the first suction head 21, and may have a valley 63 on the line segment that is the diagonal of the rectangle, and a pair of inclined portions 64 arranged symmetrically on either side of the valley 63. The joining surface Da of the die D is often rectangular, and the valley 63 (and thus the protruding portion 23) can be positioned at a location that bisects the joining surface Da of the die D.

[0106] As shown in Figure 14(A), it is preferable that the second adsorption surface 62 has a plurality of suction holes 65 along its periphery. When the suction mechanism 66 draws gas from each suction hole 65, a suction pressure is generated in each suction hole 65. If a plurality of suction holes 65 are formed along the periphery of the second adsorption surface 62, the die D can be bent and deformed along the entire second adsorption surface 62.

[0107] The suction hole 65 may be formed in the center of the second suction surface 62.

[0108] The suction mechanism 66 draws gas from each suction port 65. The suction mechanism 66 has a suction line. The suction line forms a gas flow path. The suction mechanism 66 has, for example, an on / off valve and a pressure controller in the middle of the suction line. The on / off valve opens and closes the gas flow path under the control of the control circuit 90. The pressure controller controls the gas pressure under the control of the control circuit 90.

[0109] As shown in Figures 10 and 11, the second suction surface 62 may be flat. Also, as shown in Figures 15 and 16, the second suction surface 62 may be flat and have a linear groove 67 at a position opposite the linear projection 23. The groove 67 can accommodate the deformation of the die D that occurs when the first suction surface 22 adsorbs the die D.

[0110] As shown in Figures 10 and 11, the bonding apparatus 1 preferably includes a pressing device 70. The pressing device 70 assists in the pickup of the die D by the pickup device 60. The pressing device 70 presses the resin film E2, for example, by supplying gas to the first through-hole E3 of the carrier substrate E1, or by inserting a pin (not shown) into the first through-hole E3. The direction of pressing is the direction in which the die D is picked up (for example, the positive Z-axis direction). The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, a wedge-shaped gap can be formed between the resin film E2 and the die D, and the die D can be smoothly picked up from the resin film E2.

[0111] The joining device 1 includes a fourth moving mechanism 59. The fourth moving mechanism 59 moves the pressing device 70 and the carrier stage 50 relative to each other in order to change the die D that is pressed by the pressing device 70. In this embodiment, the fourth moving mechanism 59 moves the carrier stage 50, but it may also move the pressing device 70. The fourth moving mechanism 59 may also move both the carrier stage 50 and the pressing device 70.

[0112] The fourth moving mechanism 59 preferably moves only the carrier stage 50 in the X-axis and Y-axis directions, compared to the carrier stage 50 and the pressing device 70. If the pressing device 70 does not move in the X-axis and Y-axis directions, the pickup device 60 can pick up the die D at the same position each time. Therefore, the operation of the pickup device 60 can be simplified.

[0113] The joining device 1 preferably has the following configurations: (1) The carrier stage 50 has a first surface 51 that the carrier E contacts, a second surface 52 facing the opposite direction from the first surface 51, and a plurality of second through holes 53 that penetrate between the first surface 51 and the second surface 52. (2) The pressing device 70 has a gas supply mechanism 73 that supplies gas to the first through hole E3 via the second through holes 53.

[0114] Although not shown in the figures, the carrier stage 50 may be formed in an annular shape, and the pressing device 70 may be provided radially inward from the inner circumference of the annular carrier stage 50. In this case, the pressing head 71 forms a gas supply chamber between itself and the carrier E, and the sealing member 72 contacts the carrier E (specifically the carrier substrate E1) to seal the gas supply chamber.

[0115] However, if the pressing device 70 is positioned radially inward from the inner circumference of the annular carrier stage 50, the range of motion of the carrier stage 50 or the pressing device 70 in the X-axis and Y-axis directions becomes limited. The pressing device 70 can only press dies D that are located radially inward from the inner circumference of the annular carrier stage 50. Consequently, the number of dies D that can be mounted on the carrier E becomes limited.

[0116] According to the configurations described in (1) and (2) above, when the fourth moving mechanism 59 moves the pressing device 70 and the carrier stage 50 relative to each other in the X-axis and Y-axis directions, no interference occurs between the pressing device 70 and the carrier stage 50. As a result, the number of dies D that can be mounted on the carrier E can be increased. Therefore, the frequency of carrier E replacement can be reduced, and throughput can be improved.

[0117] When the pressing device 70 presses the resin film E2, the carrier substrate E1 may deform gently around the pressed area. Therefore, the carrier stage 50 has suction grooves 54 on its first surface 51 for vacuum adsorption of the carrier substrate E1. The carrier stage 50 can suppress deformation of the carrier substrate E1 around the pressing device 70. The suction grooves 54 are preferably provided between adjacent second through holes 53 in order to locally deform the resin film E2. The suction grooves 54 are formed, for example, in a grid pattern.

[0118] It is preferable that the sealing member 72 contacts the carrier stage 50 rather than the carrier E. The sealing member 72 contacts the second surface 52 of the carrier stage 50. Even if the sealing member 72 deteriorates and generates particles, causing the second surface 52 of the carrier stage 50 to become contaminated, the first surface 51 of the carrier stage 50 will hardly become contaminated. Therefore, contamination of the carrier E can be suppressed.

[0119] Another effect can be obtained when the sealing member 72 comes into contact with the carrier stage 50. If the accuracy of the parallelism between the sealing member 72 and the carrier stage 50 is low, the sealing member 72 can be pressed firmly against the carrier stage 50 to prevent gas leakage. Since the carrier stage 50 has higher rigidity than the carrier E, the carrier stage 50 will not be damaged. Therefore, the required accuracy of parallelism is low, and the parallelism adjustment work is simple.

[0120] The gas supply mechanism 73 supplies gas to the first through-hole E3 via the second through-hole 53 by supplying gas to the pressing head 71. The gas supply mechanism 73 has a supply line. The supply line forms a gas flow path. The gas supply mechanism 73 has, for example, an on-off valve and a pressure controller in the middle of the supply line. The on-off valve opens and closes the gas flow path under the control of the control circuit 90. The pressure controller controls the gas pressure under the control of the control circuit 90. The gas supply mechanism 73 may also have a leak valve in the middle of the supply line. The leak valve discharges gas.

[0121] Preferably, at the boundary between the carrier stage 50 and the carrier E, the first through-hole E3 and the second through-hole 53 are connected in a one-to-one ratio. The number of second through-holes 53 may be equal to or greater than the number of first through-holes E3, and may be greater than the number of first through-holes E3. It is sufficient that the second through-holes 53 are located where the first through-holes E3 are, and the first through-holes E3 and the second through-holes 53 are not connected in a one-to-one ratio.

[0122] At the boundary between the carrier stage 50 and the carrier E, it is preferable that the opening of the second through-hole 53 is smaller than the opening of the first through-hole E3 and positioned inside the opening of the first through-hole E3. In this case, since the gas pressure acts almost no way on the carrier substrate E1, the bending of the carrier substrate E1 can be suppressed. Only the resin film E2 can be deformed.

[0123] The pressing device 70 may use a plurality of second through holes 53 and a plurality of first through holes E3 to press a die D. For example, the pressing device 70 supplies gas to the plurality of first through holes E3 via the plurality of second through holes 53 to press a die D. A die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them sequentially.

[0124] The pressing device 70 includes a drive shaft 74. The drive shaft 74 moves the pressing head 71 in a first direction (e.g., positive Z-axis direction) and a second direction opposite to the first direction (e.g., negative Z-axis direction). When moving the pressing device 70 and the carrier stage 50 relative to each other in the X-axis and Y-axis directions to change the die D pressed by the pressing device 70, the sealing member 72 can be separated from the carrier stage 50. The drive shaft 74 includes an actuator such as a motor or cylinder.

[0125] A modified example of the pressing device 70 will be described with reference to Figure 17. As shown in Figure 17, the pressing device 70 may have a pin drive mechanism 79 that inserts a pin 78 into the first through hole E3 via the second through hole 53. The pin 78 presses the resin film E2. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, a wedge-shaped gap can be formed between the resin film E2 and the die D, and the die D can be smoothly picked up from the resin film E2. When the pressing device 70 has a pin drive mechanism 79, the sealing member 72 shown in Figures 10 and 11 is unnecessary.

[0126] The pin drive mechanism 79 has a drive shaft. The drive shaft has an actuator such as a motor or cylinder. The drive shaft moves the pin 78 in a first direction (positive Z-axis direction) and a second direction (negative Z-axis direction). When the pressing device 70 and the carrier stage 50 are moved relative to each other in the X-axis direction and Y-axis direction in order to change the die D that is pressed by the pressing device 70, the pin 78 can be withdrawn from the first through hole E3 and the second through hole 53.

[0127] The pressing device 70 may use multiple second through holes 53 and multiple first through holes E3 to press one die D. For example, the pressing device 70 may insert pins 78 through multiple second through holes 53 into multiple first through holes E3 to press one die D. One die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them sequentially.

[0128] While embodiments of the joining apparatus and joining method described above have been explained, this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of this disclosure.

[0129] This application claims priority based on Japanese Patent Application No. 2024-225702, filed with the Japan Patent Office on December 20, 2024, and the entire contents of Japanese Patent Application No. 2024-225702 are incorporated herein by reference.

[0130] 1 Bonding device 10 Substrate stage 21 First suction head 22 First suction surface 23 Protruding part 24 Inclined part 29 First moving mechanism D Die W Target substrate

Claims

1. A bonding apparatus for bonding a die to a target substrate, comprising: a substrate stage for holding the target substrate; a first suction head for adsorbing the die; and a first moving mechanism for moving the die together with the first suction head and pressing the die against the target substrate, wherein the first suction head has a first suction surface for adsorbing the die, and the first suction surface is a surface facing the substrate stage and has a protruding portion that protrudes the most toward the substrate stage and an inclined portion that moves further away from the substrate stage as it moves away from the protruding portion.

2. The bonding device according to claim 1, wherein the first suction surface has a plurality of suction holes along the periphery of the first suction surface, and each of the suction holes is provided so as to avoid the protruding portion.

3. The bonding apparatus according to claim 2, comprising a suction mechanism that generates suction pressure in each of the suction holes by sucking gas from each of the suction holes, and a control circuit, wherein the control circuit controls the suction mechanism so that the first suction head vacuum-adsorbs the die, controls the first moving mechanism so that the die approaches the target substrate together with the first suction head, and controls the suction mechanism so that the first suction head releases vacuum suction of the die at the same time as or immediately after the start of pressing the die against the target substrate.

4. The bonding device according to claim 1, wherein the first suction surface has the projection on a line segment passing through the center of the first suction surface, and has a pair of inclined portions arranged symmetrically on either side of the projection.

5. The bonding apparatus according to claim 1, wherein the first adsorption surface is rectangular when viewed from the substrate stage, has the protrusion on a line segment connecting the midpoints of each of a pair of sides of the rectangle, and has a pair of inclined portions arranged symmetrically on either side of the protrusion.

6. The bonding apparatus according to claim 1, wherein the first adsorption surface is rectangular when viewed from the substrate stage, has the protruding portion on a line segment which is the diagonal of the rectangle, and has a pair of inclined portions which are plane-symmetrical on either side of the protruding portion.

7. The bonding apparatus according to claim 1, comprising: a second suction head for adsorbing the die; a third moving mechanism for moving the second suction head; and a control circuit, wherein the control circuit controls the first moving mechanism and the third moving mechanism to transfer the die from the second suction head to the first suction head.

8. The bonding apparatus according to claim 7, wherein the second suction head has a second suction surface for adsorbing the die, and the second suction surface is a surface facing the first suction surface and has a shape that is an inversion of the first suction surface.

9. The bonding apparatus according to claim 7, wherein the second suction head has a second suction surface for adsorbing the die, the first suction surface has the protrusion on a line segment passing through the center of the first suction surface, and has a pair of inclined portions symmetrically on either side of the protrusion, and the second suction surface is a surface facing the first suction surface and has a groove at a position opposite to the protrusion.

10. A bonding method for bonding the die to the target substrate using a bonding apparatus according to any one of claims 1 to 9.

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