Etching method
The etching method using an oxygen-rich gas with a sulfur-containing promoter enhances efficiency and reduces shape abnormalities, resulting in precise carbon film etching with high aspect ratios and controlled dimensions.
WO2026140677A1PCT designated stage Publication Date: 2026-07-02DAIKIN INDUSTRIES LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- DAIKIN INDUSTRIES LTD
- Filing Date
- 2025-11-28
- Publication Date
- 2026-07-02
AI Technical Summary
Technical Problem
Existing etching methods for carbon films are inefficient and prone to shape abnormalities during the etching process.
Method used
An etching method using an etching gas containing oxygen and a reaction promoter with a high partial pressure of oxygen and sulfur atoms, which includes a compound with a high sulfur content, is employed to enhance etching efficiency and suppress shape abnormalities.
Benefits of technology
The method achieves improved etching rates and reduces pattern distortions such as bowing and twisting, enabling the formation of fine patterns with high aspect ratios and controlled dimensions.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure JPOXMLDOC01-APPB-C000001 
Figure JPOXMLDOC01-APPB-C000002 
Figure JPOXMLDOC01-APPB-C000003
Abstract
Provided is an etching method for a carbon film, said etching method comprising (1) providing a substrate that has a carbon film to the inside a chamber, and (2) etching the carbon film under plasma conditions using an etching gas that contains oxygen and a reaction accelerator, wherein, in the etching gas, oxygen has the highest partial pressure, and the reaction accelerator contains a sulfur atom.
Need to check novelty before this filing date? Find Prior Art