Photo-Emissive Cathodes TRIZ Cases

Lattice-matched quaternary photocathode layers cut strain on binary substrates, extending night vision sensitivity to 1550 nm with higher quantum efficiency.

Different electrode potentials and crossed conductive lines control meta-surface electron emission to improve electromagnetic wave detection accuracy.

Direct wafer bonding joins InGaAs on InP with GaAs absorbers to extend I2Tube response beyond 0.91 μm without lattice-mismatch defects.

Reduced-lead microchannel plates enable robust wafer-level image intensifiers with higher throughput and direct digital imaging.

Quaternary absorber layers lattice matched to binary substrates reduce strain, extend photocathode sensitivity to 1550 nm, and improve night-vision QE.

Sharp-tip conducting structures on a dielectric substrate boost field emission, extending photo-cathode detection into THz and infrared ranges.

Nanostructures in the band bending region extend photocathode response to 1550 nm while improving quantum efficiency and lowering background illumination.

Quaternary absorber layers matched to binary substrates reduce strain and extend night-vision photocathode response toward 1550 nm.

Spring-mounted anode assemblies with insulating spacers index the photocathode to eliminate complex manufacturing processes and reduce production costs.

Selective removal of the outer resistive layer prevents Joule heating and temperature rise in the device.

A beryllium oxide underlayer prevents alkali metal diffusion during thermal treatment, resolving low effective quantum efficiency in conventional photocathodes.

A metal boride electron emitter features a rounded tip under 1 μm radius for stable field emission.

Segmented AlGaN superlattice structure overcomes low quantum efficiency in near-ultraviolet detection by optimizing energy band gaps across compositional zones.