Photo-Emissive Cathodes TRIZ Cases

Lattice-matched quaternary photocathode layers cut strain on binary substrates, extending night vision sensitivity to 1550 nm with higher quantum efficiency.

Different electrode potentials and crossed conductive lines control meta-surface electron emission to improve electromagnetic wave detection accuracy.

Direct wafer bonding joins InGaAs on InP with GaAs absorbers to extend I2Tube response beyond 0.91 μm without lattice-mismatch defects.

Reduced-lead microchannel plates enable robust wafer-level image intensifiers with higher throughput and direct digital imaging.

Quaternary absorber layers lattice matched to binary substrates reduce strain, extend photocathode sensitivity to 1550 nm, and improve night-vision QE.

Sharp-tip conducting structures on a dielectric substrate boost field emission, extending photo-cathode detection into THz and infrared ranges.

Nanostructures in the band bending region extend photocathode response to 1550 nm while improving quantum efficiency and lowering background illumination.

Quaternary absorber layers matched to binary substrates reduce strain and extend night-vision photocathode response toward 1550 nm.