An open stub combines phase adjustment and impedance conversion in a Doherty amplifier, shortening stub length and reducing circuit board area.
A CMOS PA, control logic, and switch integrated on an SOI substrate cuts RF module size and cost while preserving amplification.
PLL clock cycle counting compensates DC-DC shutdown delay so UWB circuits can wake from deep sleep with lower power and accurate timing.
A distal power amplifier boosts a low-power microwave signal at the instrument tip, reducing cable losses in electrosurgical tissue treatment.
Adjustable wire-bond height tunes input-match inductance between the transistor and IPD, extending power amplifier bandwidth above 3 GHz.
Integrated ranging and classification sensors identify sensitive objects in the keep-out zone, enabling safer wireless charging without complex beam forming.
Segmented RF shielding and an overstress protection circuit help compact front-end modules block EMI and protect integrated circuits.
Integrated shielding and overstress protection help compact RF front-end modules limit EMI, protect sensitive circuits, and improve reliability.
High-frequency stacked rectifier filters help this RF power module deliver compact high-voltage output with lower switching losses for mmWave to terahertz devices.
Distributed gate capacitors equalize impedance at each common-gate finger, cutting RF loss and raising output power in a cascode amplifier.
Separating RF, analog, and digital chips into linked packages improves process-node fit, cuts cost, and supports high-speed baseband transfer.
Intentional inductor coupling and resonance damping stabilize a compact Doherty amplifier while preserving efficiency and wide video bandwidth.