A novel dual mode toggle switch

Abstract

The application relates to a novel dual-mode switching switch, which comprises two single-pole double-throw switches and is left-right mirror symmetrical, and can switch three-port mode and four-port mode, the three-port mode is one-input two-output (or two-input one-output), and the four-port mode is two-input two-output. The switch can be applied to a millimeter wave transmitter and receiver front end as a signal switching and mode switching module. Compared with a traditional switch, the switch has the advantages of balanced output signals in two different working modes, small insertion loss, high isolation, small area, high integration and the like.

Description

TECHNICAL FIELD

[0001] The application relates to a novel dual-mode switching switch, a dual-mode switching switch with a novel topology, and belongs to the technical field of radio frequency and analog integrated circuits of microelectronics and solid electronics. BACKGROUND

[0002] In recent years, with the development of 5G, the frequency of communication has begun to enter the millimeter wave frequency band, and the phased array technology has been widely used. Therefore, the design of a high-integration, low-power and reconfigurable radio frequency transceiver has become very important. As a key device of the millimeter wave phased array, the radio frequency switch is applied to the transmission-reception switching, variable attenuator, phase shifter and multi-standard communication system.

[0003] The radio frequency switch is usually designed by using a transistor or a diode based on III-V semiconductor. With the progress of CMOS technology, the low-cost advantage is increasingly apparent, and more and more radio frequency devices begin to adopt CMOS technology. For the radio frequency devices in the L and S bands, CMOS technology has become the mainstream, and for the design above 10 GHz, it is still challenging, especially for the switch in the millimeter wave frequency band, which is more difficult.

[0004] The main limitation of the CMOS transistor as a switch is the node diode between the source and the drain and the substrate. The node diode increases the loss of signal leakage to the substrate and also limits the voltage swing of the signal. When the transistor is turned on, the on-resistance between the source and the drain increases the loss, and when the transistor is turned off, the parasitic capacitance existing between the source and the drain will cause the isolation to be poor. In addition, since the capacitive impedance of the diode capacitor is very low at the millimeter wave frequency, the substrate resistance from the diode to the substrate ground is also an important problem.

[0005] In the document “B.W.Min and G.M.Rebeiz,“Ka-Band Low-Loss and High-Isolation Switch Design in 0.13-um CMOS[C], IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 6, pp. 1364-1371, June 2008.”, a series single-pole double-throw switch with a substrate resistance network is adopted, and the insertion loss at 35 GHz is 2.2 dB, and the isolation is 32 dB, but four inductors are required for each single-pole double-throw switch, which occupies a large area.

[0006] A switched inductor is used in the document "Low-loss and Small-size 28GHz CMOS SPDT Switches using Switched Inductor[C]. IEEE Radio Frequency Integrated Circuits Symposium, 148-151, June 2018." connected to a closed series MOSFET switch to achieve a resonant off-capacitance, achieving 0.89dB insertion loss and 18.2dB isolation, the isolation is small and it is only a single-pole double-throw switch.

[0007] In summary, the new type of millimeter wave switch has a wide range of application scenarios and unique advantages over existing designs. SUMMARY

[0008] The present application is aimed at solving the problems in the prior art, and provides a new type of dual-mode switching switch. The technical scheme is aimed at the switching needs of single-input double-output or double-input single-output, double-input double-output, and has small area, low insertion loss and high isolation.

[0009] To achieve the above purpose, the technical scheme of the present application is as follows: a new type of dual-mode switching switch, the dual-mode switching switch includes two single-pole double-throw switches, the two single-pole double-throw switches are left-right mirror symmetrical, and the three-port mode and the four-port mode are switched.

[0010] Further, the single-pole double-throw switch includes two groups of single-pole single-throw switches S1, S2 and S3, S4 with opposite switching logic, wherein S1 is connected in series between the moving end and the fixed end 1, S2 is connected in series between the moving end and the fixed end 2, and S3 and S4 are connected in series and connected between the two fixed ends.

[0011] Further, the two single-pole double-throw switches are left-right mirror symmetrical, the fixed end 1 of one single-pole double-throw switch is connected to the fixed end 1 of the other single-pole double-throw switch at the connection point 3, the connection point 1 of S3 and S4 is connected to the connection point 2 of S5 and S6, and the midpoint of the connection line between the connection point 1 and the connection point 2 is connected to the connection point 3. The left-right mirror symmetry of the circuit structure can reduce the performance difference between the left and right two signals.

[0012] Further, in the three-port mode, S1, S4, S6 and S7 are turned on, and S2, S3, S5 and S8 are turned off; in the four-port mode, S1, S4, S6 and S7 are turned off, and S2, S3, S5 and S8 are turned on. In the three-port mode, ports 1, 2 and 4 are turned on, and a signal is input from port 4, and ports 1 and 2 generate the same output (or ports 1 and 2 input the same signal, and port output is a synthesized signal); in the four-port mode, ports 1 and 3 are turned on, and ports 2 and 4 are turned on, a signal is input from port 3, and port 1 outputs (or port 1 inputs, and port 3 outputs), another signal is input from port 4, and port 2 outputs (or port 2 inputs, and port 4 outputs);

[0013] Further, the single-pole single-throw switch is realized by using a transistor with a substrate series resistance, and turning on and turning off are realized by controlling the voltage of the gate. The substrate series resistance can reduce signal leakage to the ground through the substrate and substrate loss, thereby improving the overall switch performance.

[0014] Further, the transistor is in parallel connection with a resonant inductor at both ends, and the two transistors (M1 and M2) share one resonant inductor. Reducing the number of inductors can greatly reduce the overall area and cost. The center frequency is determined by the resonant inductor and the parasitic capacitance of the turned-off transistor, and the center frequency can be adjusted by changing the resonant inductor value and the total gate width of the transistor. When the switch is applied to different working frequency bands, the center frequency can be adjusted to the working frequency band only by adjusting the inductor value and the total gate width of the transistor.

[0015] The application of the novel dual-mode switching switch is located in front of a transmitter or behind a receiver, and serves as a channel switching switch.

[0016] Compared with the prior art, the application has the following advantages: 1. The technical scheme solves the problem of dual-mode switching of a phased array; 2. The conduction loss between the conduction ports is small, and the isolation degree between the non-conduction ports is high; 3. Two transistors share one resonant inductor, and the overall area of the chip is significantly reduced; and 4. The technical scheme has high integration, and can effectively reduce the area of a multi-channel system. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a four-port mode function diagram of the novel dual-mode switching switch of the application;

[0018] Figure 2 is a three-port mode function diagram of the novel dual-mode switching switch of the application;

[0019] Figure 3 is a structure block diagram of the novel dual-mode switching switch of the application;

[0020] Figure 4 is a three-port mode structure diagram of the novel dual-mode switching switch of the application;

[0021] Figure 5 is a four-port mode structure diagram of a novel dual-mode switching switch of the present application;

[0022] Figure 6 is a single-pole double-throw switch circuit diagram of a dual-mode switching switch of the present application;

[0023] Figure 7 is a specific implementation circuit diagram of a novel dual-mode switching switch of the present application. DETAILED DESCRIPTION

[0024] In order to deepen the understanding of the present application, the present embodiment will be described in detail below with reference to the accompanying drawings.

[0025] Embodiment 1: see Figures 1-7 A novel dual-mode switching switch includes two single-pole double-throw switches, wherein the single-pole double-throw switch includes a group of switch transistors (M1, M2) and a group of switching transistors (M3, M4). The control logic of M1 and M2 is opposite, the control logic of M3 and M4 is opposite, and the control logic of M1 and M4 is the same. The sources of M1 and M2 are connected as a moving end, the drains of M1 and M3 are connected as a moving end, the drains of M2 and M4 are connected as another moving end, and the sources of M3 and M4 are connected. The negative end of the resonant inductor is connected to the moving end, and the positive end is connected to the source node of M3 and M4. The two single-pole double-throw switches are left-right symmetrical, the drains of M1 and M7 are connected to the positive ends of the two inductors, and the entire dual-mode switch is composed. In three-port mode, S1, S4, S6, and S7 are turned on, S2, S3, S5, and S8 are turned off, ports 1, 2, and 4 are turned on, a signal is input from port 4, and ports 1 and 2 generate the same output (or ports 1 and 2 input the same signal, and port output is a synthesized signal). In four-port mode, S1, S4, S6, and S7 are turned off, and S2, S3, S5, and S8 are turned on. In four-port mode, ports 1 and 3 are turned on, and ports 2 and 4 are turned on. One way of signal input is from port 3, and port 1 outputs (or port 1 inputs, and port 3 outputs). Another way of signal input is from port 4, and port 2 outputs (or port 2 inputs, and port 4 outputs). In three-port mode, Vc1 is high, Vc2 is low, M1, M4, M6, and M7 are turned on, and M2, M3, M5, and M8 are turned off. In four-port mode, Vc1 is high, Vc2 is low, M1, M4, M6, and M7 are turned off, and M2, M3, M5, and M8 are turned on. The center frequency is determined by the resonant inductor and the parasitic capacitance of the transistor turned off.

[0026] In summary, the novel dual-mode switch of the application can switch between three-port mode and four-port mode. The transistor is selected with a large total gate width to achieve a small conduction loss, the resonant inductor offsets the transistor off-capacitance to achieve a high isolation degree. The transistor substrate is connected in series with a resistance to reduce the substrate loss.

[0027] It should be noted that the above examples are not intended to limit the scope of the application, and any equivalent transformations or substitutions made on the basis of the above technical solutions fall within the scope of the claims of the application.

Claims

1. A novel dual mode toggle switch characterized in that, The dual-mode switch includes two single-pole double-throw switches, which are left-right mirror symmetrical, and switches between three-port mode and four-port mode. The single-pole double-throw switch includes two groups of single-pole single-throw switches S1, S2 and S3, S4 with opposite logic, wherein S1 is connected between the moving end and the fixed end 1, S2 is connected between the moving end and the fixed end 2, S3 and S4 are connected in series and connected between the two fixed ends, the two single-pole double-throw switches are left-right mirror symmetrical, the fixed end 1 of one single-pole double-throw switch is connected to the fixed end 1 of the other single-pole double-throw switch at the connection point 3, the connection point 1 of S3 and S4 is connected to the connection point 2 of S5 and S6, and the midpoint of the connection line between the connection point 1 and the connection point 2 is connected to the connection point 3.

2. The novel dual mode toggle switch of claim 1, wherein, In the three-port mode, S1, S4, S6 and S7 are turned on, and S2, S3, S5 and S8 are turned off; in the four-port mode, S1, S4, S6 and S7 are turned off, and S2, S3, S5 and S8 are turned on.

3. The novel dual mode toggle switch of claim 2, wherein, The single-pole single-throw switch is realized by using a substrate series resistance transistor connected to ground, and is turned on and off by controlling the voltage of the gate.

4. Use of the novel dual mode toggle switch according to any one of claims 1-3, characterized in that, The novel dual-mode switch is located in front of the transmitter or behind the receiver, and is used as a channel switching switch.

Images