Heterogeneous integrated lithium niobate film based on coupling structure, preparation method and optical device

By heterogeneously integrating a III-V active waveguide layer on a thin-film lithium niobate photonic chip and performing vertical evanescent wave coupling, the problems of low integration and coupling efficiency in the prior art are solved, realizing an optical device with high efficiency optical detection and high integration.

CN115407532BActive Publication Date: 2026-04-21SUN YAT SEN UNIV
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Patent Information

Application Number
CN202211167513.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-09-23
Publication Date
2026-04-21
Estimated Expiration
2042-09-23

AI Technical Summary

Technical Problem

In existing technologies, integrating III-V materials on lithium niobate photonic chips using wafer bonding technology suffers from low integration density and coupling efficiency.

Method used

Using heterogeneous integration wafer bonding technology, a III-V active waveguide layer is integrated onto a thin-film lithium niobate photonic chip. High-efficiency coupling between the III-V active waveguide layer and the lithium niobate waveguide layer is achieved through vertical evanescent wave coupling. Photodetection is performed by applying a reverse voltage using N-type and P-type metal electrodes.

Benefits of technology

It achieves highly integrated and efficient optical detection functions, reduces costs, facilitates mass production, and is suitable for high-performance on-chip integrated optical detectors.

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Abstract

The application relates to the technical field of optical devices, and discloses a hetero-integrated thin-film lithium niobate wafer coupling structure, a preparation method and an optical device. The application comprises a thin-film lithium niobate photonic chip, and the thin-film lithium niobate photonic chip is integrated with a III-V active waveguide layer through a hetero-integrated wafer bonding technology; the thin-film lithium niobate photonic chip is provided with a lithium niobate waveguide layer, and the output end of the lithium niobate waveguide layer is coupled with the input end of the III-V active waveguide layer in a vertical evanescent wave mode; and the III-V active waveguide layer is covered with an N-type metal electrode and a P-type metal electrode. The III-V active waveguide layer is integrated onto the lithium niobate photonic chip through the hetero-integrated wafer bonding technology, and the function of on-chip light detection of the thin-film lithium niobate platform is realized. The III-V active waveguide layer and the thin-film lithium niobate photonic chip are optically interconnected in a vertical evanescent wave coupling mode through an III-V / LN mode spot converter which is designed in an optimized mode, and high-efficiency coupling between the III-V active waveguide layer and the lithium niobate waveguide is realized.
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