Semiconductor laser element with built-in piezoelectric polarization control layer

By incorporating a piezoelectric polarization control layer into the semiconductor laser element, the problems of quantum confinement Stark effect and thermal mismatch in nitride semiconductor lasers are solved, improving hole injection efficiency and transport, reducing the excitation threshold, and enhancing the lasing power and slope efficiency of the laser element.

CN116667148BActive Publication Date: 2025-12-19GEN SEMICONDUCTOR (ANHUI) CO LTD
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Patent Information

Application Number
CN202310604539.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-05-26
Publication Date
2025-12-19
Estimated Expiration
2043-05-26

AI Technical Summary

Technical Problem

Existing nitride semiconductor lasers suffer from problems such as strong piezoelectric polarization caused by active layer lattice mismatch and large strain, resulting in severe quantum confinement Stark effect, difficulty in hole transport, non-uniform carrier injection, non-uniform gain, and thermal mismatch leading to increased threshold current, decreased output optical power and slope efficiency.

Method used

By embedding a piezoelectric polarization control layer in a semiconductor laser device, the spontaneous polarization and piezoelectric polarization of the active layer are harmonized under the action of the current injection electric field. This reduces the quantum confinement Stark effect, improves hole injection efficiency and transport, alleviates thermal mismatch, and enhances the stimulated emission and lasing gain of the laser device.

Benefits of technology

Lowering the excitation threshold of laser elements improves their lasing power and slope efficiency, enhancing their application. (Phrase: Application Areas: Semiconductor lasers; Specific application areas: Semiconductor devices, specifically those involving built-in piezoelectric polarization control layers; Specific application areas: Semiconductor laser elements.)

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Abstract

The application provides a semiconductor laser element with a built-in piezoelectric polarization control layer, and relates to the technical field of semiconductor optoelectronic devices. The semiconductor laser element comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer. A piezoelectric polarization control layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The piezoelectric polarization control layer is any one or any combination of HfO2, NiCo2O4, CoFe2O4, FeF2 and ZrO2. The piezoelectric polarization control layer generates piezoelectric polarization under the action of an electric field generated by current injection, reconciles spontaneous polarization and piezoelectric polarization of the active layer, reduces quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electric excitation gain of the laser element, simultaneously, relieves the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.
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