Photoresist composition and preparation process thereof

Abstract

The invention provides a photoresist composition and a preparation process thereof. The photoresist composition is prepared from the following raw materials in parts by weight: 80.0 to 100.0 parts of solvent, 20.0 to 40.0 parts of resin, 3.0 to 5.0 parts of photoinitiator, 1.0 to 3.0 parts of light stabilizer, 1.5 to 2.5 parts of tackifier, 1.0 to 1.5 parts of monomer, 1.0 to 2.0 parts of acid diffusion inhibitor and 0.5 to 2.0 parts of flatting agent. Wherein the acid diffusion inhibitor is prepared from perfluorocyclohexane, benzo-15-crown ether-5 and L-ethyl lactate, and the mass volume ratio g / mL of the perfluorocyclohexane to the benzo-15-crown ether-5 to the L-ethyl lactate is (2-3): (1-2): (1-2). According to the acid diffusion inhibitor disclosed by the invention, through the combined action of different mechanisms of the perfluorocyclohexane, the benzo-15-crown ether-5 and the L-ethyl lactate, the diffusion speed of acid is slowed down, so that the boundary between an exposure region and a non-exposure region is clearer, and the resolution ratio of photoresist is improved. By modifying the methacrylic resin, the surface energy and polarity of the methacrylic resin are changed, and the solubility of the resin after exposure is remarkably changed, so that the photoresist is easier to remove in a developing solution, and the definition and resolution of a pattern are improved.

Description

Technical Field

[0001] The invention relates to the technical field of photoresists, and in particular to a photoresist composition and a preparation process thereof. Background Art

[0002] Photoresist, also known as photoresist, is a mixed liquid composition that is sensitive to light. It can react chemically under the action of light and produce certain physical or chemical changes. By controlling the intensity and direction of light, the processing and manufacturing of photoresist can be achieved. Therefore, photoresist is one of the key materials for fine pattern processing in microelectronics technology, and is mainly used in the electronics industry and printing industry. As the chip manufacturing process continues to shrink, the resolution requirements for photoresist are getting higher and higher. How to further improve the resolution of photoresist to adapt to more advanced chip manufacturing processes is a major challenge. Summary of the invention

[0003] In view of this, the present invention provides a photoresist composition and a preparation process thereof to solve the above problems.

[0004] The technical solution of the present invention is achieved in this way:

[0005] A photoresist composition comprises the following raw materials in parts by weight: 80.0-100.0 parts of a solvent, 20.0-40.0 parts of a resin, 3.0-5.0 parts of a photoinitiator, 1.0-3.0 parts of a light stabilizer, 1.5-2.5 parts of a tackifier, 1.0-1.5 parts of a monomer, 1.0-2.0 parts of an acid diffusion inhibitor, and 0.5-2.0 parts of a leveling agent, wherein the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown-5, and L-ethyl lactate in a mass volume ratio g / mL of (2-3):(1-2):(1-2).

[0006] Further, the resin is a modified methacrylic resin, and the modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, and obtaining a methacrylic resin solution. Wherein, the mass volume ratio of methacrylic resin to cyclohexane is 1: (4-6) g / mL. The methacrylic resin solution is added dropwise to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution, and the reaction temperature is set to 60-80°C, and the reaction is stirred for 20-30h. Wherein, the volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is (8-12): (4-6): (0.4-0.6). After the reaction is completed, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake; the filter cake is washed with ethanol 2-3 times, and the washed filter cake is placed in a vacuum drying oven, and the drying temperature is set to 40-60°C, the vacuum degree is -0.08 to -0.10MPa, and dried for 18-24h to obtain a modified methacrylic resin.

[0007] Furthermore, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of (2.0-3.0):(0.5-1.0):(1.0-1.5).

[0008] Furthermore, the solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of (3-5):(2-4):(1-3).

[0009] Furthermore, the monomer is one or a combination of 1,1-dimethylethyl 4-vinylphenyl carbonate, 4,4-biphenyldicarboxaldehyde, 4,4'-bis(hydroxymethyl)biphenyl, 3,4-hydroxystyrene, 1,3-dihydroxyadamantane, 1-methacryloyloxy-3-adamantanol, and 4-vinylphenol acetate.

[0010] Furthermore, the leveling agent is one or a combination of alkyl-modified organic siloxane, polyether-modified organic siloxane, phosphate acrylate, and phosphate methacrylate.

[0011] Furthermore, the viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of (2-5):(5-8).

[0012] Furthermore, the light stabilizer is one of 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, 2-(2′-hydroxy-3′,5′-di-tert-butylphenyl)benzotriazole, 2-(2′-hydroxy-3′-tert-butyl-5′-methylphenyl)-5-chlorobenzotriazole, 2-hydroxy-4-methoxybenzophenone, and 2-hydroxy-4-n-octyloxybenzophenone.

[0013] Further, a process for preparing a photoresist composition comprises the following steps:

[0014] S1, adding the resin into the solvent, stirring and dissolving, to obtain a resin solution;

[0015] S2, adding a photoinitiator, a light stabilizer, and a tackifier to the resin solution, stirring and dissolving, to obtain a mixed solution I;

[0016] S3, adding monomer, acid diffusion inhibitor and leveling agent to mixed solution I, stirring and dissolving, to obtain mixed solution II;

[0017] S4. Filter the mixed solution II using a filter membrane with a pore size of ≤0.2 μm to obtain a photoresist composition.

[0018] Furthermore, in S1, the stirring speed is 200-500 rpm and the stirring time is 30-50 min; in S2, the stirring speed is 300-600 rpm and the stirring time is 20-30 min; in S3, the stirring speed is 300-600 rpm and the stirring time is 20-30 min. The above S1, S2, S3 and S4 are carried out under the conditions of humidity of 50-60% and temperature of 20-25°C.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention modifies the methacrylic resin and introduces a fluorine-containing group, thereby changing the surface energy and polarity of the methacrylic resin, causing a significant change in the solubility of the resin after exposure, thereby making the photoresist easier to remove in the developer, thereby improving the clarity and resolution of the pattern.

[0021] The present invention slows down the diffusion rate of the acid by adding an acid diffusion inhibitor composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a specific ratio, thereby making the boundary between the exposed area and the non-exposed area clearer and forming a steeper pattern edge, which helps to more accurately form the desired pattern during the development process, thereby improving the resolution of the photoresist.

[0022] The present invention adds a tackifier composed of L-proline methyl ester and hexamethyldisilazane in a specific ratio, and the two improve the adhesion performance of the photoresist through different mechanisms. The amino group and ester group contained in the L-proline methyl ester can interact with the active sites on the surface of the substrate to form chemical bonds and physical adsorption, thereby improving the adhesion performance between the photoresist and the substrate. The organic silicon structure of the hexamethyldisilazane makes it have excellent wettability and leveling properties, can reduce the surface tension of the photoresist, make the photoresist easier to spread and evenly distribute on the substrate, help to increase the contact area between the photoresist and the substrate, thereby enhancing the adhesion performance, and can also reduce bubbles and defects in the photoresist layer, thereby improving the quality of the photoresist. DETAILED DESCRIPTION

[0023] In order to better understand the technical content of the present invention, specific embodiments are provided below to further illustrate the present invention.

[0024] Unless otherwise specified, the experimental methods used in the embodiments of the present invention are all conventional methods.

[0025] Unless otherwise specified, the materials, reagents, etc. used in the embodiments of the present invention can be obtained from commercial sources.

[0026] Example 1

[0027] A photoresist composition comprises the following raw materials in parts by weight: 80.0 parts of solvent, 20.0 parts of resin, 3.0 parts of photoinitiator, 1.0 parts of light stabilizer, 1.5 parts of tackifier, 1.0 parts of monomer, 1.0 parts of acid diffusion inhibitor and 0.5 parts of leveling agent. Among them, the solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 3:2:1, the resin is a modified methacrylic resin, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of 2.0:0.5:1.0, the light stabilizer is 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, the viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of 2:5, the monomer is 1,1-dimethylethyl 4-vinylphenyl carbonate, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a mass volume ratio of g / mL of 2:1:1, and the leveling agent is an alkyl-modified organic silicone.

[0028] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, and obtaining a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:4. The methacrylic resin solution is added dropwise to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution, the reaction temperature is set to 60°C, and the reaction is stirred for 30 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 8:4:0.4. After the reaction is completed, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake; the filter cake is washed twice with ethanol, and the washed filter cake is placed in a vacuum drying oven, the drying temperature is set to 40°C, the vacuum degree is -0.08MPa, and dried for 24 hours to obtain a modified methacrylic resin.

[0029] Example 2

[0030] A photoresist composition comprises the following raw materials in parts by weight: 100.0 parts of solvent, 40.0 parts of resin, 5.0 parts of photoinitiator, 3.0 parts of light stabilizer, 2.5 parts of tackifier, 1.5 parts of monomer, 2.0 parts of acid diffusion inhibitor and 2.0 parts of leveling agent. Among them, the solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 5:4:3, the resin is a modified methacrylic resin, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of 3.0:1.0:1.5, the light stabilizer is 2-(2′-hydroxy-3′,5′-di-tert-butylphenyl)benzotriazole, the thickener is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of 5:8, the monomer is composed of 3,4-hydroxystyrene and 4-vinylphenol acetate in a volume ratio of 1:1, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a mass volume ratio of g / mL of 3:2:2, and the leveling agent is composed of an alkyl-modified organic silicone and phosphate ester methacrylate in a volume ratio of 1:1.

[0031] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, and obtaining a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:6. The methacrylic resin solution is added dropwise to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution, the reaction temperature is set to 80°C, and the reaction is stirred for 20 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 12:6:0.6. After the reaction is completed, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake; the filter cake is washed 3 times with ethanol, and the washed filter cake is placed in a vacuum drying oven, the drying temperature is set to 60°C, the vacuum degree is -0.10MPa, and it is dried for 18 hours to obtain a modified methacrylic resin.

[0032] Example 3

[0033] A photoresist composition comprises the following raw materials in parts by weight: 90.0 parts of solvent, 30.0 parts of resin, 4.0 parts of photoinitiator, 2.0 parts of light stabilizer, 2.0 parts of tackifier, 1.2 parts of monomer, 1.5 parts of acid diffusion inhibitor, and 1.3 parts of leveling agent. The solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 4:3:2, the resin is a modified methacrylic resin, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of 2.5:0.8:1.2 g / mL, the light stabilizer is 2-hydroxy-4-n-octyloxybenzophenone, and the tackifier is composed of L-4-fluorobenzoate in a volume ratio of 3.5:6.5 -proline methyl ester and hexamethyldisilazane, the monomer is composed of 4,4'-bis(hydroxymethyl)biphenyl and 1-methacryloyloxy-3-adamantanol in a mass ratio of 1:1, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5 and L-ethyl lactate in a mass volume ratio of g / mL of 2.5:1.5:1.5, and the leveling agent is composed of polyether modified organic silicone and phosphate acrylate in a volume ratio of 1:1.

[0034] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, and obtaining a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:5. The methacrylic resin solution is added dropwise to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution, the reaction temperature is set to 70°C, and the reaction is stirred for 24 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 10:5:0.5. After the reaction is completed, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake; the filter cake is washed 3 times with ethanol, and the washed filter cake is placed in a vacuum drying oven, the drying temperature is set to 50°C, the vacuum degree is -0.09MPa, and it is dried for 20 hours to obtain a modified methacrylic resin.

[0035] The photoresist compositions in the above-mentioned embodiments 1-3 are prepared according to the following process, comprising the following steps:

[0036] S1. Add the resin into the solvent and stir at 350 rpm for 40 min to obtain a resin solution.

[0037] S2. Add photoinitiator, light stabilizer and tackifier to the resin solution, stir at 450 rpm for 25 min to obtain mixed solution I.

[0038] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, stir at 450 rpm for 25 min to obtain mixed solution II.

[0039] S4, filter the mixed solution II using a filter membrane with a pore size of 0.1 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0040] The above S1, S2, S3 and S4 were carried out under the conditions of humidity of 55% and temperature of 22°C.

[0041] Example 4

[0042] Compared with Example 3, this embodiment is different in that the photoresist composition is prepared according to the following process, including the following steps:

[0043] S1. Add the resin into the solvent and stir at 200 rpm for 50 min to obtain a resin solution.

[0044] S2. Add photoinitiator, light stabilizer and tackifier to the resin solution, stir at 300 rpm for 30 min to obtain mixed solution I.

[0045] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, stir at 300 rpm for 30 min to obtain mixed solution II.

[0046] S4, filter the mixed solution II using a filter membrane with a pore size of 0.1 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0047] The above steps S1, S2, S3 and S4 are performed under the conditions of a humidity of 50% and a temperature of 20°C.

[0048] Example 5

[0049] Compared with Example 3, this embodiment is different in that the photoresist composition is prepared according to the following process, including the following steps:

[0050] S1. Add the resin into the solvent and stir at 500 rpm for 30 min to obtain a resin solution.

[0051] S2. Add photoinitiator, light stabilizer and tackifier to the resin solution, stir at 600 rpm for 20 min to obtain mixed solution I.

[0052] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, stir at 600 rpm for 20 min to obtain mixed solution II.

[0053] S4, filter the mixed solution II using a filter membrane with a pore size of 0.2 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0054] The above S1, S2, S3 and S4 are carried out under the conditions of humidity of 60% and temperature of 25°C.

[0055] Comparative Example 1

[0056] This comparative example is compared with Example 3, except that methacrylic acid resin is used instead of modified methacrylic acid resin.

[0057] Comparative Example 2

[0058] The difference between this comparative example and Example 3 is that the raw materials do not contain an acid diffusion inhibitor.

[0059] Comparative Example 3

[0060] This comparative example is compared with Example 3, except that the acid diffusion inhibitor is composed of perfluorocyclohexane and L-ethyl lactate in a volume ratio of g / mL of 2.5:1.5.

[0061] Comparative Example 4

[0062] The difference between this comparative example and Example 3 is that the raw material does not contain a tackifier.

[0063] Comparative Example 5

[0064] The difference between this comparative example and Example 3 is that the adhesion promoter is a single-component hexamethyldisilazane.

[0065] 1. Resolution test

[0066] Take the photoresist composition prepared in the above-mentioned embodiments 1-5 and comparative examples 1-3, spin-coat it on a silicon wafer at 2000rpm, and bake it at 100°C for 60s to obtain a photoresist layer. Use a standard L / S=1:1 detection mask plate, and use a light source with a wavelength of 365nm to expose the obtained photoresist layer. Use a tetramethylammonium hydroxide solution with a mass fraction of 2.38w% as a developer to develop the exposed photoresist layer, and the development time is 60s. Use a scanning electron microscope to observe the resolution of the developed photoresist pattern. Measure and record the minimum line width, which is the resolution of the photoresist. Each embodiment and comparative example was tested 5 times, and the average value was taken. The results are shown in Table 1.

[0067] Table 1

[0068]

[0069] It can be seen from Table 1 that the photoresist compositions prepared in Examples 1 to 5 of the present invention have relatively high resolutions, among which Example 3 has the highest resolution.

[0070] By comparing with comparative example 1 through embodiment 3, embodiment 3 introduces fluorine-containing groups by modifying methacrylic resin, thereby changes the surface energy and polarity of methacrylic resin, makes the solubility of resin after exposure significantly change, thereby makes photoresist be more easily removed in developer, thereby improves the clarity and resolution of pattern.And the reaction of epoxyfluoropropane and methacrylic resin forms more crosslinking points, increases the crosslinking density of resin, thereby reduces the side etching phenomenon in the developing process, improves the fidelity and resolution of pattern.In addition, fluorine-containing groups have stronger electron-withdrawing ability, can stabilize free radicals, reduce the recombination probability between free radicals.In the exposure process of photoresist, free radicals are generated after photoinitiator absorbs photons, and these free radicals then cause the decomposition reaction of resin.The presence of fluorine-containing groups can enhance the stability of free radicals, makes free radicals can exist for a longer time and participate in the decomposition reaction of resin, thereby improves reaction efficiency.Because modified methacrylic resin and acid diffusion inhibitor all contain fluorine-containing groups, the compatibility between them is significantly enhanced. This enhanced compatibility makes the dissolution and dispersion of the acid diffusion inhibitor in the resin more uniform, reduces the occurrence of phase separation and aggregation, the diffusion of the acid is more effectively controlled, the edges of the exposed area are steeper, and the photoresist exhibits more stable performance during exposure and development, and the resolution and clarity of the pattern are improved.

[0071] By comparing Example 3 with Comparative Example 2, Example 3 slows down the diffusion speed of acid by adding an acid diffusion inhibitor composed of a specific ratio of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate, so that the boundary between the exposure area and the non-exposure area is clearer, a steeper pattern edge is formed, and it is helpful to more accurately form the required pattern in the development process, thereby improving the resolution of the photoresist. The perfluorocyclohexane is enriched on the resin surface to form a layer of physical barrier. This layer of barrier can slow down the diffusion speed of acid molecules from the exposure area to the non-exposure area, thereby making the edge of the exposure area steeper. The benzo-15-crown ether-5 has a cavity inside, which can accommodate and form a complex based on the electrostatic attraction and hydrogen bonding between the oxygen atoms on the crown ether ring and the hydrogen ions in the acid molecules. The formation of the complex reduces the free mobility of the acid molecules, because the acid molecules are "fixed" in the cavity of the crown ether ring, it is difficult to diffuse freely in the resin, thereby effectively slowing down the diffusion speed of the acid. In addition, the formation of complex also helps to reduce the direct contact of acid molecules with resin, further reducing the influence of acid diffusion on resin. The hydroxyl and ester groups in the L-ethyl lactate molecule can form hydrogen bonds with the acid molecules, so that the acid molecules are "bound" around the L-ethyl lactate molecules, thereby slowing down the free mobility of the acid and reducing its diffusion rate in the resin. The chiral structure of L-ethyl lactate makes it have certain steric hindrance in space. When it interacts with the acid molecules, this steric hindrance will hinder the further diffusion of the acid molecules in the resin. The steric hindrance effect is combined with the hydrogen bond effect to jointly slow down the diffusion rate of the acid. Through the joint action of the different mechanisms of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate, the diffusion rate of the acid is slowed down, so that the boundary between the exposure area and the non-exposure area is clearer, thereby improving the resolution of the photoresist. Compared with Comparative Example 3 by Example 3, the effect of the acid diffusion inhibition lacking benzo-15-crown ether-5 has been greatly weakened. It can be seen that the inclusion and complexation of acid molecules by benzo-15-crown ether-5 can effectively slow down the diffusion rate of the acid, thereby improving the resolution of the photoresist.

[0072] 2. Adhesion performance test

[0073] Take the photoresist composition prepared in Examples 1-5 and Comparative Examples 4-5, spin-coat it on a silicon wafer at 2000rpm, and bake it at 100°C for 60s to obtain a photoresist layer. Use a standard L / S=1:1 detection mask plate, and use a light source with a wavelength of 365nm to expose the obtained photoresist layer. Use a tetramethylammonium hydroxide solution with a mass fraction of 2.38w% as a developer to develop the exposed photoresist layer for 60s. Then cure it at 100°C and a nitrogen atmosphere for 60min. Divide the cured photoresist layer into 100 square blocks of equal size, and evenly attach the tape to the 100 square blocks of the photoresist layer. Then peel the tape off the photoresist layer at a steady and uniform speed. After peeling the tape, carefully observe the photoresist blocks still retained on the substrate and count the number of retained blocks. Evaluate the bonding performance of the photoresist according to the number of retained blocks. The number of retained blocks was between 90 and 100, which was excellent; between 75 and 89, which was good; between 60 and 74, which was qualified; and less than 60, which was unqualified. The test was repeated three times, and the average number of retained blocks was used for evaluation. The results are shown in Table 2.

[0074] Table 2

[0075] Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 4 Comparative Example 5 Adhesion performance excellent excellent excellent excellent excellent qualified good

[0076] As can be seen from Table 2, the photoresist compositions prepared by the embodiments 1-5 of the present invention have excellent adhesion properties. The present invention adds a tackifier composed of a specific ratio of L-proline methyl ester and hexamethyldisilazane, and the two improve the adhesion properties of the photoresist through different mechanisms. The amino and ester groups contained in the L-proline methyl ester can interact with the active sites on the surface of the substrate to form chemical bonds and physical adsorption, thereby improving the adhesion properties between the photoresist and the substrate. In addition, the amphiphilic properties of L-proline methyl ester enable it to form an orderly arrangement on the interface, which helps to reduce the surface tension between the photoresist and the substrate, making the photoresist easier to spread on the substrate surface, and further enhancing the adhesion properties. The organosilicon structure of the hexamethyldisilazane enables it to have excellent wettability and leveling properties, which can reduce the surface tension of the photoresist, making the photoresist easier to spread and evenly distributed on the substrate, helping to increase the contact area between the photoresist and the substrate, enhancing the adhesion properties, and also reducing bubbles and defects in the photoresist layer, improving the quality of the photoresist.

[0077] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A photoresist composition, characterized in that The invention comprises the following raw materials in parts by weight: 80.0-100.0 parts of solvent, 20.0-40.0 parts of resin, 3.0-5.0 parts of photoinitiator, 1.0-3.0 parts of light stabilizer, 1.5-2.5 parts of tackifier, 1.0-1.5 parts of monomer, 1.0-2.0 parts of acid diffusion inhibitor and 0.5-2.0 parts of leveling agent. The acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown-5 and L-ethyl lactate in a mass volume ratio g / mL of (2-3):(1-2):(1-2).

2. A photoresist composition according to claim 1, characterized in that: The resin is a modified methacrylic resin, which is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, to obtain a methacrylic resin solution, wherein the mass volume ratio of the methacrylic resin to the cyclohexane is 1:(4-6) g / mL; adding the methacrylic resin solution dropwise to epifluoropropane, and then adding triethylamine as a catalyst to obtain a reaction solution, setting the reaction temperature to 60-80° C., stirring and reacting for 20-30 hours, wherein the volume ratio of the methacrylic resin solution, epifluoropropane, and triethylamine is (8-12):(4-6):(0.4-0.6); after the reaction is completed, cooling the reaction solution to room temperature, filtering it using a Buchner funnel, and taking a filter cake; The filter cake is washed with ethanol for 2-3 times, and the washed filter cake is placed in a vacuum drying oven, the drying temperature is set to 40-60°C, the vacuum degree is -0.08 to -0.10 MPa, and dried for 18-24 hours to obtain the modified methacrylic acid resin.

3. A photoresist composition according to claim 1, characterized in that: The photoinitiator consists of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone and triphenylsulfonium hexafluoroantimonate with a mass volume ratio of g / mL of (2.0-3.0):(0.5-1.0):(1.0-1.5).

4. A photoresist composition according to claim 1, characterized in that: The solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether and cyclohexanone in a volume ratio of (3-5):(2-4):(1-3).

5. A photoresist composition as claimed in claim 1, characterized in that: The monomer is one or a combination of 1,1-dimethylethyl 4-vinylphenyl carbonate, 4,4-biphenyldicarboxaldehyde, 4,4'-bis(hydroxymethyl)biphenyl, 3,4-hydroxystyrene, 1,3-dihydroxyadamantane, 1-methacryloyloxy-3-adamantanol, and 4-vinylphenol acetate.

6. A photoresist composition according to claim 1, characterized in that: The leveling agent is one or a combination of alkyl-modified organic siloxane, polyether-modified organic siloxane, phosphate acrylate, and phosphate methacrylate.

7. A photoresist composition according to claim 1, characterized in that: The viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of (2-5):(5-8).

8. A photoresist composition as claimed in claim 1, characterized in that: The light stabilizer is one of 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, 2-(2′-hydroxy-3′,5′-di-tert-butylphenyl)benzotriazole, 2-(2′-hydroxy-3′-tert-butyl-5′-methylphenyl)-5-chlorobenzotriazole, 2-hydroxy-4-methoxybenzophenone, and 2-hydroxy-4-n-octyloxybenzophenone.

9. A process for preparing a photoresist composition as claimed in claim 1, characterized in that: The following steps are involved: S1, adding the resin into the solvent, stirring and dissolving, to obtain a resin solution; S2, adding a photoinitiator, a light stabilizer, and a tackifier to the resin solution, stirring and dissolving, to obtain a mixed solution I; S3, adding monomer, acid diffusion inhibitor and leveling agent to the mixed solution I, stirring and dissolving, to obtain a mixed solution II; S4. Filter the mixed solution II using a filter membrane with a pore size of ≤0.2 μm to obtain a photoresist composition.

10. A process for preparing a photoresist composition according to claim 9, characterized in that: In the S1, the stirring speed is 200-500 rpm and the stirring time is 30-50 min; in the S2, the stirring speed is 300-600 rpm and the stirring time is 20-30 min; in the S3, the stirring speed is 300-600 rpm and the stirring time is 20-30 min. The S1, S2, S3 and S4 are carried out under the conditions of humidity of 50-60% and temperature of 20-25°C.

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